CA1000417A - Fine tuning power diodes with irradiation - Google Patents

Fine tuning power diodes with irradiation

Info

Publication number: CA1000417A
Authority: CA; Canada
Prior art keywords: irradiation; fine tuning; power diodes; tuning power; diodes
Prior art date: 1973-03-09
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

CA193,134A

Other versions

CA193134S (en

Inventor

Krishan S. Tarneja

John Bartko

Joseph E. Johnson

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

CBS Corp

Original Assignee

Westinghouse Electric Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1973-03-09

Filing date

1974-02-21

Publication date

1976-11-23

1974-02-21 Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp

1976-11-23 Application granted granted Critical

1976-11-23 Publication of CA1000417A publication Critical patent/CA1000417A/en

Status Expired legal-status Critical Current

Links

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

CA193,134A 1973-03-09 1974-02-21 Fine tuning power diodes with irradiation Expired CA1000417A (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US05/339,699 US3933527A (en)	1973-03-09	1973-03-09	Fine tuning power diodes with irradiation

Publications (1)

Publication Number	Publication Date
CA1000417A true CA1000417A (en)	1976-11-23

Family

ID=23330215

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA193,134A Expired CA1000417A (en)	1973-03-09	1974-02-21	Fine tuning power diodes with irradiation

Country Status (3)

Country	Link
US (1)	US3933527A (en)
CA (1)	CA1000417A (en)
GB (1)	GB1467173A (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4043837A (en) *	1975-01-10	1977-08-23	Westinghouse Electric Corporation	Low forward voltage drop thyristor
US4056408A (en) *	1976-03-17	1977-11-01	Westinghouse Electric Corporation	Reducing the switching time of semiconductor devices by nuclear irradiation
US4075037A (en) *	1976-05-17	1978-02-21	Westinghouse Electric Corporation	Tailoring of recovery charge in power diodes and thyristors by irradiation
JPS5819125B2 (en) *	1976-08-11	1983-04-16	株式会社日立製作所	Manufacturing method of semiconductor device
JPS5395581A (en) *	1977-02-02	1978-08-21	Hitachi Ltd	Manufacture for semiconductor device
US4137099A (en) *	1977-07-11	1979-01-30	General Electric Company	Method of controlling leakage currents and reverse recovery time of rectifiers by hot electron irradiation and post-annealing treatments
US4134778A (en) *	1977-09-02	1979-01-16	General Electric Company	Selective irradiation of thyristors
US4138280A (en) *	1978-02-02	1979-02-06	International Rectifier Corporation	Method of manufacture of zener diodes
US4240844A (en) *	1978-12-22	1980-12-23	Westinghouse Electric Corp.	Reducing the switching time of semiconductor devices by neutron irradiation
US4291329A (en) *	1979-08-31	1981-09-22	Westinghouse Electric Corp.	Thyristor with continuous recombination center shunt across planar emitter-base junction
IN153170B (en) *	1980-07-24	1984-06-09	Westinghouse Electric Corp
US4972094A (en) *	1988-01-20	1990-11-20	Marks Alvin M	Lighting devices with quantum electric/light power converters
EP0398120B1 (en) *	1989-05-18	1993-10-13	Asea Brown Boveri Ag	Semiconductor device
US6107106A (en) *	1998-02-05	2000-08-22	Sony Corporation	Localized control of integrated circuit parameters using focus ion beam irradiation
WO2002017371A1 (en) *	2000-08-24	2002-02-28	Toyoda Gosei Co., Ltd.	Method for reducing semiconductor resistance, device for reducing semiconductor resistance and semiconductor element

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US2911533A (en) *	1957-12-24	1959-11-03	Arthur C Damask	Electron irradiation of solids
US3272661A (en) *	1962-07-23	1966-09-13	Hitachi Ltd	Manufacturing method of a semi-conductor device by controlling the recombination velocity
US3533857A (en) *	1967-11-29	1970-10-13	Hughes Aircraft Co	Method of restoring crystals damaged by irradiation
JPS4837232B1 (en) *	1968-12-04	1973-11-09

1973
- 1973-03-09 US US05/339,699 patent/US3933527A/en not_active Expired - Lifetime
1974
- 1974-02-21 CA CA193,134A patent/CA1000417A/en not_active Expired
- 1974-02-27 GB GB881774A patent/GB1467173A/en not_active Expired

Also Published As

Publication number	Publication date
USB339699I5 (en)	1975-01-28
US3933527A (en)	1976-01-20
GB1467173A (en)	1977-03-16

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CA1000417A (en)	1976-11-23	Fine tuning power diodes with irradiation
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CA1003124A (en)	1977-01-04	Irradiation plant
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CA1016269A (en)	1977-08-23	Semiconductor power component with positive taper
CA976772A (en)	1975-10-28	Power generation
AU472700B2 (en)	1976-06-03	Power hacksaw
AU432106B2 (en)	1973-02-15	Power takeoff means
CA871320A (en)	1971-05-18	High current square wave power source
CA872427A (en)	1971-06-01	High frequency power supply
CA973209A (en)	1975-08-19	Energy absorption device
CA891852A (en)	1972-02-01	Power hacksaws
AU483246B2 (en)	1976-01-08	Energy regulator
CA938990A (en)	1973-12-25	High power cathode