CA1112375A - Method of treating a monocrystalline body - Google Patents
Method of treating a monocrystalline bodyInfo
- Publication number
- CA1112375A CA1112375A CA311,348A CA311348A CA1112375A CA 1112375 A CA1112375 A CA 1112375A CA 311348 A CA311348 A CA 311348A CA 1112375 A CA1112375 A CA 1112375A
- Authority
- CA
- Canada
- Prior art keywords
- layer
- treatment
- monocrystalline
- substratum
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0683—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating measurement during deposition or removal of the layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
Abstract
ABSTRACT:
A method in which a monocrystalline body is subjected in a gas atmosphere to a treatment changing the thickness of the body, in which the thickness of the body is controlled by means of a measuring member which is subjected to the same treatment and which measuring member, on its side which is subjected to the treatment, consists of a monocrystalline layer and an adjoining substratum of a material having a refractive index differing of that the monocrystal-line layer material, characterized in that a measur-ing member is used in the manufacture of which the sub-stratum is provided on a free surface of the mono-crystalline layer.
A method in which a monocrystalline body is subjected in a gas atmosphere to a treatment changing the thickness of the body, in which the thickness of the body is controlled by means of a measuring member which is subjected to the same treatment and which measuring member, on its side which is subjected to the treatment, consists of a monocrystalline layer and an adjoining substratum of a material having a refractive index differing of that the monocrystal-line layer material, characterized in that a measur-ing member is used in the manufacture of which the sub-stratum is provided on a free surface of the mono-crystalline layer.
Description
3'~5 The invention relates to a method in which a monocrystalline body is subjected in a gas atmos-phere to a treatment changing the thickness of the body, in which the thickness of the body is controlled ~y means of a measuring member which is subjected to the same treatment and which measuring member, on the side which is subjected to the treatment, consists of .
a monocrystalline layer and an adjoining substratum of a material having an index of refraction differ-ing from that of the monocrystalline material of the layer, and to a body obtained by means of the method, The treatment changiny the thickness of the body is a process in which silicon is deposited epitaxially from the gaseous phase on a monocrystal-line silicon substrate. Furthermore a measuringmember is used which has been obtained by implant-ation of nitrogen ions in a monocrystalline silicon body so that a monocrystalline silicon layer is formed on a substratum of silicon nitride with the remainder 20 of the silicon body on the other side of the silicon .
nitride substratum. :~
., ...:
:;
-. .
- \
16.6.78 ~ 7~'~
Informativn o.n the thlckness of -khe ~pi~
taxial layer is ob-tained :from lnterference r11easule-ments, This may be i.nterfere:nce of radiation or:Lgi-nating from the monocrystalline layer directly erna~
nating from the layer with raclla-t:Lon which is first reflected by the substratum.
`Alternatively, inter:ference may be measure~d .
of incident laser ligh~ which is pa:rtly reflected by :: the surface of the monocrystalliLle layer and partly . : 10 by the substratum.
In order to obtain a clecisive interference pat-tern :it is necessary for the monocrystalline la.yer to be Or a quality which is comparable to that of the body to be treated.
i5 ~ It is al.so desirable ~or the substratum of the~1neasuring member to be homogeneous in composition and thi.ckness a.nd also~or the thickness:of the mono-crys:talline layer~to:he~constant.
: A good~quality~of the monocrysta.l.liIle layer ` and the substrate, however, is difficul-t to reali~e ::
~ with the above-described kllown method.
:
; For examp~e, in order to obtain a sat-isfac-torlly re~lect~ng;substratul71 by impla:ntationf a higl dose of ions to~be implanted is necessary, which ions 25~ have~to~b;e ~mplanted at higll ener~y so tha-t a compa~
ratively:large number of crystal lamages oc.cur wh.ich . : . : ~ ~ .
, Pl-IN 8893 16.6,78 3'~
do no-t all d:i.sappea:r aga:i:ll by the:r~al tre.ltlne:rll, and by wh.ic:h -the mea~sLlring melllbe:r arld the body to be treat-ecl arc d~ fficu:l.t -to comp.lre.
[n gena:ral. -th-3 i.mp].antat;ion depth is not larg~e so th.at in -the case oi'-tr~atmen-ts in ~ ich :re--ductions in thickness occur the duration Or con-trol.
is restric-ted.
, The reac-tion between -the materia] of tha measllri1l.g membcr and the i.mpla.:nted :i ons o:Etan.:is al-so insuffic-ieJlt so tha-t the inte:rface between the mo-nocrystalLina layar and the subs1;ratl.lm and also the reflection at that area is poorly de:E`lnad One of the objects of the invan-tion i.s to a~oid the above~lnent:ioned disadvantages at laast -to a considerable extent. The invention is based inter a:lia on the recognition of' tha fact that the forma-tion of the substratum on the monocrys-tal]ine layer is to be preferred over the formatio~l on the substra-tunl in a monocrystallina boclyO
According to tlle invention, the nletllod nlen~
tioned in tha precambla :is therefore chQra.c-ter:ized in that a measur:ing member is used iIl tha manu~acture oI` which the substratum is provi.ded on a E`ree surfa.ca of` the morlocrystal.line layar.
By mealls of -the me-thod. according to the in--ventioll, -tha substral,unl can be prov:ided. in a usua]
-.. . .
. l~, .
.
P~IN 8~93 16.6.78 mallner ~:i.t.hout the mo:nc)c:rys-talline Iayer be:i.ng damaged.
As a ITlaterlal for -the substratum may be cllo~
sen, fo:r e~amp:le, silicon diox:ide, s:il.icon ni-tri.de or s:ilicon carb:ide w.h.:i.ch can easi:l.y be obta:ined i:n the form of layers o:~ homogeneous compositi.on and thick-. ness.
; O.f course 9 -the thicknes~ o~ the monocrys-- talline layer may also be chosen wit;hin wide lirm.its.
The measuring member is pre*erab:l.y used in ;~ 10 the epita~ial deposit;ion oI` a layer of semiconductor `~ rnaterial on a subs-trate as a treatrnent which causes the thickness of the body to increase.
Howe~rer, by menns of t:he rnethod accord.ing to the invention, a treatmen-t 9 ~or e~ample e-tching, causing the thickness o:~ t;:he body to decrease can al-. so be controlled.
Successire etchin~ and epita~ial treatrnents can also be controlled in the descr:ibed manner.
rneasu:ring mernber for use in the method :20: according to the in.vention can be obtained in a corn-paratively simple mamlcr by epitaxially depositing the monocrystalli.ne layer on a subst:rate di~er:ing :
from~the mono~crystalline layer at least as regards conductivity properties, then prov:idhlg the substra~-25~ tum;and removing~the Iast-lr~lelltioned substrate.
The last~m:entioned substrate is preferably ~ ::: ::
:
PMN 8~93 1G.6.78 v~
removed b~ ~e~lns o~ an etclling l)rocess whicl~ is se-lect~ve w:it,h :respect, t;o t;he monocrystall:irle laye:L.
Suc:tl e-tchi.ng processes can easl:L.y he in-dicated ~ in the treatmeJlt semicon~luc-tor ma-teria:L is transported belongillg to -the-.gr,c)1.ljo consis-t:ing of si~
licon a:nd :CII-V compounds. As a substratulll i.s pre~
I ~erably used a 1.ayer of silicon ni-tr:ide or of si.licon di.oxide and i.n order to i:ncrease the rigidi-ty of the measuring mernber, a layer o~ po.lysilicon is provi.ded on the substratum, The :inven-tion also relates to a monocrysta:L~
: line body trea-t;ed by mean.s o~ -the method according to the invention.
The :i.nvention w:ill now be described in greater detail with reference -to an example and the accompan.ying drawingO
~igs. 1 and 2 of the draw:ing are d.iagram-ma-tio sectional views o:f a measu:ring n1einber used in the method according to the i.nvention`in successive , stages o:i^ its manufacture.
In -the exall1ple.~ a monocrystalline silicon body is subject;ed in a gas a-tmosphere to trea-tments changing the thicknes.s o~ the body. The thic~ness O.r the body is controlled by means of a measuri.ng member 1 wh.ich i~s sub;jected to the sarrle t:reatments, : The measuri.llg melnber 1 on i.t.s side which is subjected to the treatme1lt cvnsists o~ a monocrystal.~
, ...
~ .
.
.
PIJN ~89~, 16.6.78 3~
line layer-2 aild an acl.joinil1g subst:rcltu1rl 3 of a : Ma-terial havlng an i:ndex of ref`:l~actio:tl dif:~er:ingl`~om that o:~ tlle rnol1.ocrysi;alli.n.e Layer oI` material.
. ~ccorclingr to the invelltion a measuring Inem-ber is used in the manufactLIre~ of wlli.cll the subsl;ra-tum JS provided on a free surface of the sllicon layer 2.
~ The measurin~ member 1 is obtained by de-positing ep.i-taxial:Ly a 3/um -thick monocrystalline layer 2 o:f the n type on a disc-shaped substrate Ll of monocrystall-Lne silicon of -the n type having a cliameter o* 5 cm and a thickness of 200/um.
~. substraturrl 3 o~ silicon nitride (0.3/urn thick) or silicon dioxide (0.45/um thicl~) is provid~-ed on layer 2 and then a 200/um thic~ high-ohmic polysilicon layer 5 is provided :~ The substrate 4 i.s thell relllovecl by me~alls of an etching process which etches s~leo-tively ~ith :
: respec-t -to the monocrystalline layer 2, . Silicon has a refracti.~e .index o~ 3.42, si-l:icon n:i-tride a refractive index of 2.00.
The disc-shaped substrate ll :i9 then severed in the usual man.ner to form measuring members havillg : an area of 7 mm x 7 mm.
25~ ~ ~ Conventionally used methods rnay be applied ~ ~ :
: ~ : ~ 7 : ::
::: :
P~-IN 8893 ~ 3'~'~ 16,6,7 i:rl the treatlnell-ts challglng the tlL:Lckness alld :i:n. th.e manu.racture in the measurin.g mem'ber.
The sa:i.cl selecti~e etch-ing process may 'be carried out in a su:itablc etching bath, if deslred electrochemically, i:~ desired succeeding a parti.. al mechanical removal of the. substrate 4.
In the present example, the body -to be :: ; . -treated and.. the measuring mernber are~ placed in a re-actor and are successively subjected to an etching treatment ln an atrrlosphere containing hydrogen chLo-ride a~ld then to an epitaxial treatment in an atmos--' phere containing silicon tetraohLori.de.
Increase and decrease o.~ the thickness are reco:rdcd in the us~lal mal~ler by Irleasuring the inten-sity o~ the radiati.on emanating from the monocr~stal-line layer. The tiMe difference between the recording : ~ :
o:~ tw~ successive intensi-ty maxima corresponds to a-n ncrease~or decrease of the thickness wh~i.ch depends, : besides on the wa~elength of the recorded radiation, ~ also on the emanating angle of the radiati.on an.d in particular on the refrac,t:ive index of the mater:ial : o~ the layer.
It has:be~en ~ound that changes in thickness o~:approximal,ely 6/um correspondi~ng to 20 cycles of 25~ appro~imately 0i3/um in the intensit~ variations can ' '' :be~;recorded.
:: ~:: . : . - :- - - .
~,~ l'HN ~)3 1 6 L 6 . 7 8 L;mits are imposed upon -the number of cyc:Lc?s of` intensity variatiolls by the banclwLdt;h oL` the record-ed radlat:ion, the scatter by the sllbstra-tunl and ab30rp-t:ion of the radia-t;lon in the grrowlng material, Besides by recordiIlg emit-ted, in the case of silicon infrared, radiat:ions, reflec tion of :Laser radiation can a:l so be measured in which less extinc-tion occurs when the layer thickness :increases.
The invent ion is not res tric ted to the example descr:ibecl.
For example, illsteacl of an amorphous sub-stra tur1l f`or example silicon nitr:icle, a monocrys tal-line substra tum, f`or example of sapph:ire, may alter~
nat ive ly b e u s e d O
The thickness eontrol described may be used in a process to control the growth ra-te o f an epi-taxial layer .
n addition to sLlicon~ f-or example, I~ V-compounds can be grown by means of the rne thod acco rd-~
ing to the inventi on.
l`he ma terial o ~ the body to be treated may, bu t ne e d no t ne c e s s ari ly b e e qu al t o tha t o f the mono -:: ` : :
c ry~s t~l l ine l ay e r o f the me a su rirlg m emb e r .
g :~ ~: ~ :: : ` :
:
a monocrystalline layer and an adjoining substratum of a material having an index of refraction differ-ing from that of the monocrystalline material of the layer, and to a body obtained by means of the method, The treatment changiny the thickness of the body is a process in which silicon is deposited epitaxially from the gaseous phase on a monocrystal-line silicon substrate. Furthermore a measuringmember is used which has been obtained by implant-ation of nitrogen ions in a monocrystalline silicon body so that a monocrystalline silicon layer is formed on a substratum of silicon nitride with the remainder 20 of the silicon body on the other side of the silicon .
nitride substratum. :~
., ...:
:;
-. .
- \
16.6.78 ~ 7~'~
Informativn o.n the thlckness of -khe ~pi~
taxial layer is ob-tained :from lnterference r11easule-ments, This may be i.nterfere:nce of radiation or:Lgi-nating from the monocrystalline layer directly erna~
nating from the layer with raclla-t:Lon which is first reflected by the substratum.
`Alternatively, inter:ference may be measure~d .
of incident laser ligh~ which is pa:rtly reflected by :: the surface of the monocrystalliLle layer and partly . : 10 by the substratum.
In order to obtain a clecisive interference pat-tern :it is necessary for the monocrystalline la.yer to be Or a quality which is comparable to that of the body to be treated.
i5 ~ It is al.so desirable ~or the substratum of the~1neasuring member to be homogeneous in composition and thi.ckness a.nd also~or the thickness:of the mono-crys:talline layer~to:he~constant.
: A good~quality~of the monocrysta.l.liIle layer ` and the substrate, however, is difficul-t to reali~e ::
~ with the above-described kllown method.
:
; For examp~e, in order to obtain a sat-isfac-torlly re~lect~ng;substratul71 by impla:ntationf a higl dose of ions to~be implanted is necessary, which ions 25~ have~to~b;e ~mplanted at higll ener~y so tha-t a compa~
ratively:large number of crystal lamages oc.cur wh.ich . : . : ~ ~ .
, Pl-IN 8893 16.6,78 3'~
do no-t all d:i.sappea:r aga:i:ll by the:r~al tre.ltlne:rll, and by wh.ic:h -the mea~sLlring melllbe:r arld the body to be treat-ecl arc d~ fficu:l.t -to comp.lre.
[n gena:ral. -th-3 i.mp].antat;ion depth is not larg~e so th.at in -the case oi'-tr~atmen-ts in ~ ich :re--ductions in thickness occur the duration Or con-trol.
is restric-ted.
, The reac-tion between -the materia] of tha measllri1l.g membcr and the i.mpla.:nted :i ons o:Etan.:is al-so insuffic-ieJlt so tha-t the inte:rface between the mo-nocrystalLina layar and the subs1;ratl.lm and also the reflection at that area is poorly de:E`lnad One of the objects of the invan-tion i.s to a~oid the above~lnent:ioned disadvantages at laast -to a considerable extent. The invention is based inter a:lia on the recognition of' tha fact that the forma-tion of the substratum on the monocrys-tal]ine layer is to be preferred over the formatio~l on the substra-tunl in a monocrystallina boclyO
According to tlle invention, the nletllod nlen~
tioned in tha precambla :is therefore chQra.c-ter:ized in that a measur:ing member is used iIl tha manu~acture oI` which the substratum is provi.ded on a E`ree surfa.ca of` the morlocrystal.line layar.
By mealls of -the me-thod. according to the in--ventioll, -tha substral,unl can be prov:ided. in a usua]
-.. . .
. l~, .
.
P~IN 8~93 16.6.78 mallner ~:i.t.hout the mo:nc)c:rys-talline Iayer be:i.ng damaged.
As a ITlaterlal for -the substratum may be cllo~
sen, fo:r e~amp:le, silicon diox:ide, s:il.icon ni-tri.de or s:ilicon carb:ide w.h.:i.ch can easi:l.y be obta:ined i:n the form of layers o:~ homogeneous compositi.on and thick-. ness.
; O.f course 9 -the thicknes~ o~ the monocrys-- talline layer may also be chosen wit;hin wide lirm.its.
The measuring member is pre*erab:l.y used in ;~ 10 the epita~ial deposit;ion oI` a layer of semiconductor `~ rnaterial on a subs-trate as a treatrnent which causes the thickness of the body to increase.
Howe~rer, by menns of t:he rnethod accord.ing to the invention, a treatmen-t 9 ~or e~ample e-tching, causing the thickness o:~ t;:he body to decrease can al-. so be controlled.
Successire etchin~ and epita~ial treatrnents can also be controlled in the descr:ibed manner.
rneasu:ring mernber for use in the method :20: according to the in.vention can be obtained in a corn-paratively simple mamlcr by epitaxially depositing the monocrystalli.ne layer on a subst:rate di~er:ing :
from~the mono~crystalline layer at least as regards conductivity properties, then prov:idhlg the substra~-25~ tum;and removing~the Iast-lr~lelltioned substrate.
The last~m:entioned substrate is preferably ~ ::: ::
:
PMN 8~93 1G.6.78 v~
removed b~ ~e~lns o~ an etclling l)rocess whicl~ is se-lect~ve w:it,h :respect, t;o t;he monocrystall:irle laye:L.
Suc:tl e-tchi.ng processes can easl:L.y he in-dicated ~ in the treatmeJlt semicon~luc-tor ma-teria:L is transported belongillg to -the-.gr,c)1.ljo consis-t:ing of si~
licon a:nd :CII-V compounds. As a substratulll i.s pre~
I ~erably used a 1.ayer of silicon ni-tr:ide or of si.licon di.oxide and i.n order to i:ncrease the rigidi-ty of the measuring mernber, a layer o~ po.lysilicon is provi.ded on the substratum, The :inven-tion also relates to a monocrysta:L~
: line body trea-t;ed by mean.s o~ -the method according to the invention.
The :i.nvention w:ill now be described in greater detail with reference -to an example and the accompan.ying drawingO
~igs. 1 and 2 of the draw:ing are d.iagram-ma-tio sectional views o:f a measu:ring n1einber used in the method according to the i.nvention`in successive , stages o:i^ its manufacture.
In -the exall1ple.~ a monocrystalline silicon body is subject;ed in a gas a-tmosphere to trea-tments changing the thicknes.s o~ the body. The thic~ness O.r the body is controlled by means of a measuri.ng member 1 wh.ich i~s sub;jected to the sarrle t:reatments, : The measuri.llg melnber 1 on i.t.s side which is subjected to the treatme1lt cvnsists o~ a monocrystal.~
, ...
~ .
.
.
PIJN ~89~, 16.6.78 3~
line layer-2 aild an acl.joinil1g subst:rcltu1rl 3 of a : Ma-terial havlng an i:ndex of ref`:l~actio:tl dif:~er:ingl`~om that o:~ tlle rnol1.ocrysi;alli.n.e Layer oI` material.
. ~ccorclingr to the invelltion a measuring Inem-ber is used in the manufactLIre~ of wlli.cll the subsl;ra-tum JS provided on a free surface of the sllicon layer 2.
~ The measurin~ member 1 is obtained by de-positing ep.i-taxial:Ly a 3/um -thick monocrystalline layer 2 o:f the n type on a disc-shaped substrate Ll of monocrystall-Lne silicon of -the n type having a cliameter o* 5 cm and a thickness of 200/um.
~. substraturrl 3 o~ silicon nitride (0.3/urn thick) or silicon dioxide (0.45/um thicl~) is provid~-ed on layer 2 and then a 200/um thic~ high-ohmic polysilicon layer 5 is provided :~ The substrate 4 i.s thell relllovecl by me~alls of an etching process which etches s~leo-tively ~ith :
: respec-t -to the monocrystalline layer 2, . Silicon has a refracti.~e .index o~ 3.42, si-l:icon n:i-tride a refractive index of 2.00.
The disc-shaped substrate ll :i9 then severed in the usual man.ner to form measuring members havillg : an area of 7 mm x 7 mm.
25~ ~ ~ Conventionally used methods rnay be applied ~ ~ :
: ~ : ~ 7 : ::
::: :
P~-IN 8893 ~ 3'~'~ 16,6,7 i:rl the treatlnell-ts challglng the tlL:Lckness alld :i:n. th.e manu.racture in the measurin.g mem'ber.
The sa:i.cl selecti~e etch-ing process may 'be carried out in a su:itablc etching bath, if deslred electrochemically, i:~ desired succeeding a parti.. al mechanical removal of the. substrate 4.
In the present example, the body -to be :: ; . -treated and.. the measuring mernber are~ placed in a re-actor and are successively subjected to an etching treatment ln an atrrlosphere containing hydrogen chLo-ride a~ld then to an epitaxial treatment in an atmos--' phere containing silicon tetraohLori.de.
Increase and decrease o.~ the thickness are reco:rdcd in the us~lal mal~ler by Irleasuring the inten-sity o~ the radiati.on emanating from the monocr~stal-line layer. The tiMe difference between the recording : ~ :
o:~ tw~ successive intensi-ty maxima corresponds to a-n ncrease~or decrease of the thickness wh~i.ch depends, : besides on the wa~elength of the recorded radiation, ~ also on the emanating angle of the radiati.on an.d in particular on the refrac,t:ive index of the mater:ial : o~ the layer.
It has:be~en ~ound that changes in thickness o~:approximal,ely 6/um correspondi~ng to 20 cycles of 25~ appro~imately 0i3/um in the intensit~ variations can ' '' :be~;recorded.
:: ~:: . : . - :- - - .
~,~ l'HN ~)3 1 6 L 6 . 7 8 L;mits are imposed upon -the number of cyc:Lc?s of` intensity variatiolls by the banclwLdt;h oL` the record-ed radlat:ion, the scatter by the sllbstra-tunl and ab30rp-t:ion of the radia-t;lon in the grrowlng material, Besides by recordiIlg emit-ted, in the case of silicon infrared, radiat:ions, reflec tion of :Laser radiation can a:l so be measured in which less extinc-tion occurs when the layer thickness :increases.
The invent ion is not res tric ted to the example descr:ibecl.
For example, illsteacl of an amorphous sub-stra tur1l f`or example silicon nitr:icle, a monocrys tal-line substra tum, f`or example of sapph:ire, may alter~
nat ive ly b e u s e d O
The thickness eontrol described may be used in a process to control the growth ra-te o f an epi-taxial layer .
n addition to sLlicon~ f-or example, I~ V-compounds can be grown by means of the rne thod acco rd-~
ing to the inventi on.
l`he ma terial o ~ the body to be treated may, bu t ne e d no t ne c e s s ari ly b e e qu al t o tha t o f the mono -:: ` : :
c ry~s t~l l ine l ay e r o f the me a su rirlg m emb e r .
g :~ ~: ~ :: : ` :
:
Claims (7)
PROPERTY OR PRIVILEGE IS CLAIMED ARE DEFINED AS FOLLOWS
1. A method in which a monocrystalline body is subjected in a gas atmosphere to a treatment changing the thickness of the body, in which the thickness of the body is controlled by means of a measuring member which is subjected to the same treatment and which measuring member, on the side which is subjected to the treatment, consists of a monocrystalline layer and an adjoining substratum of a material having a refractive index differing from that of the mono-crystalline layer material, characterized in that in the manufacture of the measuring member the sub-stratum is provided on a free surface of the mono-crystalline layer.
2. A method as claimed in Claim 1, charac-terized in that the measuring member is used in the epitaxial deposition of a layer of semiconductor material on a substrate as a treatment which causes the thickness of the body to increase.
3. A method as claimed in Claim 1, charac-terized in that the measuring member is obtained by depositing the monocrystalline layer epitaxially on a substrate differing from the monocrystalline layer at least as regards conductivity properties, then providing the substratum and removing the last-mentioned substrate.
4. A method as claimed in Claim 3, charac-terized in that the last-mentioned substrate is removed by means of an etching process which etches selectively with respect to the monocrystalline layer.
5. A method as claimed in Claim 1, charac-terized in that a layer of silicon nitride or silicon dioxide is used as a substratum.
6. A method as claimed in Claim 5, charac-terized in that a layer of polysilicon is provided on the substratum.
7. A method as claimed in Claim 1, 3 or 5, characterized in that during the treatment semi-conductor material is transported which belongs to the group consisting of silicon and III-V compounds.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7710164A NL7710164A (en) | 1977-09-16 | 1977-09-16 | METHOD OF TREATING A SINGLE CRYSTAL LINE BODY. |
| NL7710164 | 1977-09-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1112375A true CA1112375A (en) | 1981-11-10 |
Family
ID=19829190
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA311,348A Expired CA1112375A (en) | 1977-09-16 | 1978-09-14 | Method of treating a monocrystalline body |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4177094A (en) |
| JP (1) | JPS5453684A (en) |
| CA (1) | CA1112375A (en) |
| DE (1) | DE2839535C2 (en) |
| FR (1) | FR2403647A1 (en) |
| GB (1) | GB2005011B (en) |
| IT (1) | IT1099071B (en) |
| NL (1) | NL7710164A (en) |
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| US4420873A (en) * | 1980-01-25 | 1983-12-20 | Massachusetts Institute Of Technology | Optical guided wave devices employing semiconductor-insulator structures |
| US4435898A (en) | 1982-03-22 | 1984-03-13 | International Business Machines Corporation | Method for making a base etched transistor integrated circuit |
| DE3219409C2 (en) * | 1982-05-19 | 1984-10-11 | Schweizerische Aluminium Ag, Chippis | Method for determining the rate of oxidation at the surface of a molten metal |
| US4855013A (en) * | 1984-08-13 | 1989-08-08 | Agency Of Industrial Science And Technology | Method for controlling the thickness of a thin crystal film |
| DE3604798A1 (en) * | 1986-02-15 | 1987-08-27 | Licentia Gmbh | Method of producing thin semiconductor films |
| JPS6369164A (en) * | 1986-09-11 | 1988-03-29 | 株式会社 潤工社 | High speed line connector |
| JPH0512954Y2 (en) * | 1987-07-30 | 1993-04-05 | ||
| JPH01106466A (en) * | 1987-10-19 | 1989-04-24 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPH067594B2 (en) * | 1987-11-20 | 1994-01-26 | 富士通株式会社 | Method for manufacturing semiconductor substrate |
| JPH03101871U (en) * | 1990-02-03 | 1991-10-23 | ||
| TW211621B (en) * | 1991-07-31 | 1993-08-21 | Canon Kk | |
| DE69233314T2 (en) * | 1991-10-11 | 2005-03-24 | Canon K.K. | Process for the production of semiconductor products |
| JP3416163B2 (en) * | 1992-01-31 | 2003-06-16 | キヤノン株式会社 | Semiconductor substrate and manufacturing method thereof |
| US5234846A (en) * | 1992-04-30 | 1993-08-10 | International Business Machines Corporation | Method of making bipolar transistor with reduced topography |
| US5334281A (en) * | 1992-04-30 | 1994-08-02 | International Business Machines Corporation | Method of forming thin silicon mesas having uniform thickness |
| US5258318A (en) * | 1992-05-15 | 1993-11-02 | International Business Machines Corporation | Method of forming a BiCMOS SOI wafer having thin and thick SOI regions of silicon |
| US5395769A (en) * | 1992-06-26 | 1995-03-07 | International Business Machines Corporation | Method for controlling silicon etch depth |
| FR2765031B1 (en) * | 1997-06-19 | 1999-09-24 | Alsthom Cge Alcatel | CONTROL OF THE ENGRAVING DEPTH IN THE MANUFACTURE OF SEMICONDUCTOR COMPONENTS |
| US6392257B1 (en) | 2000-02-10 | 2002-05-21 | Motorola Inc. | Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
| US6693033B2 (en) * | 2000-02-10 | 2004-02-17 | Motorola, Inc. | Method of removing an amorphous oxide from a monocrystalline surface |
| WO2001093336A1 (en) | 2000-05-31 | 2001-12-06 | Motorola, Inc. | Semiconductor device and method for manufacturing the same |
| AU2001277001A1 (en) | 2000-07-24 | 2002-02-05 | Motorola, Inc. | Heterojunction tunneling diodes and process for fabricating same |
| US20020096683A1 (en) | 2001-01-19 | 2002-07-25 | Motorola, Inc. | Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate |
| WO2002082551A1 (en) | 2001-04-02 | 2002-10-17 | Motorola, Inc. | A semiconductor structure exhibiting reduced leakage current |
| US20020179930A1 (en) * | 2001-06-01 | 2002-12-05 | Motorola, Inc. | Composite semiconductor structure and device with optical testing elements |
| US6709989B2 (en) | 2001-06-21 | 2004-03-23 | Motorola, Inc. | Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
| US6992321B2 (en) | 2001-07-13 | 2006-01-31 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials |
| US7019332B2 (en) | 2001-07-20 | 2006-03-28 | Freescale Semiconductor, Inc. | Fabrication of a wavelength locker within a semiconductor structure |
| US6693298B2 (en) | 2001-07-20 | 2004-02-17 | Motorola, Inc. | Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same |
| US6855992B2 (en) | 2001-07-24 | 2005-02-15 | Motorola Inc. | Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same |
| US20030026310A1 (en) * | 2001-08-06 | 2003-02-06 | Motorola, Inc. | Structure and method for fabrication for a lighting device |
| US6639249B2 (en) * | 2001-08-06 | 2003-10-28 | Motorola, Inc. | Structure and method for fabrication for a solid-state lighting device |
| US20030034491A1 (en) | 2001-08-14 | 2003-02-20 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices for detecting an object |
| US6673667B2 (en) * | 2001-08-15 | 2004-01-06 | Motorola, Inc. | Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials |
| US20030071327A1 (en) | 2001-10-17 | 2003-04-17 | Motorola, Inc. | Method and apparatus utilizing monocrystalline insulator |
| US6916717B2 (en) | 2002-05-03 | 2005-07-12 | Motorola, Inc. | Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate |
| US7169619B2 (en) * | 2002-11-19 | 2007-01-30 | Freescale Semiconductor, Inc. | Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process |
| US6885065B2 (en) | 2002-11-20 | 2005-04-26 | Freescale Semiconductor, Inc. | Ferromagnetic semiconductor structure and method for forming the same |
| US6806202B2 (en) | 2002-12-03 | 2004-10-19 | Motorola, Inc. | Method of removing silicon oxide from a surface of a substrate |
| US6963090B2 (en) | 2003-01-09 | 2005-11-08 | Freescale Semiconductor, Inc. | Enhancement mode metal-oxide-semiconductor field effect transistor |
| US6965128B2 (en) | 2003-02-03 | 2005-11-15 | Freescale Semiconductor, Inc. | Structure and method for fabricating semiconductor microresonator devices |
| DE102006030869A1 (en) * | 2006-07-04 | 2008-01-10 | Infineon Technologies Ag | Production of a semiconductor wafer useful in e.g. chip cards, comprises applying a semiconductor layer epitaxially on a surface of a semiconductor substrate, and partially removing the substrate from the semiconductor layer |
| JP4450850B2 (en) * | 2007-09-26 | 2010-04-14 | Ｏｋｉセミコンダクタ株式会社 | Manufacturing method of semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE607571A (en) * | 1960-09-09 | |||
| US3449071A (en) * | 1965-09-28 | 1969-06-10 | Lexington Lab Inc | Preparation of alumina crystals from a vapor phase reaction by monitoring the spectral scattering of light |
| GB1186340A (en) * | 1968-07-11 | 1970-04-02 | Standard Telephones Cables Ltd | Manufacture of Semiconductor Devices |
| US3620814A (en) * | 1968-08-09 | 1971-11-16 | Bell Telephone Labor Inc | Continuous measurement of the thickness of hot thin films |
| US3664942A (en) * | 1970-12-31 | 1972-05-23 | Ibm | End point detection method and apparatus for sputter etching |
| US3799800A (en) * | 1971-07-19 | 1974-03-26 | Optical Coating Laboratory Inc | Coating method utilizing two coating materials |
| NL7408110A (en) * | 1974-06-18 | 1975-12-22 | Philips Nv | SEMICONDUCTOR DEVICE WITH COMPLEMENTARY TRANSISTOR STRUCTURES AND METHOD FOR MANUFACTURE THEREOF. |
| JPS51140560A (en) * | 1975-05-30 | 1976-12-03 | Hitachi Ltd | Method of monitoring homoepitaxy film thickness |
| US4024291A (en) * | 1975-06-17 | 1977-05-17 | Leybold-Heraeus Gmbh & Co. Kg | Control of vapor deposition |
| JPS5326569A (en) * | 1976-08-25 | 1978-03-11 | Hitachi Ltd | Layer thickness control me thod of epitaxial growth layer |
| US4118857A (en) * | 1977-01-12 | 1978-10-10 | The United States Of America As Represented By The Secretary Of The Army | Flipped method for characterization of epitaxial layers |
-
1977
- 1977-09-16 NL NL7710164A patent/NL7710164A/en not_active Application Discontinuation
-
1978
- 1978-09-11 DE DE2839535A patent/DE2839535C2/en not_active Expired
- 1978-09-12 FR FR7826179A patent/FR2403647A1/en active Granted
- 1978-09-13 IT IT27637/78A patent/IT1099071B/en active
- 1978-09-13 GB GB7836653A patent/GB2005011B/en not_active Expired
- 1978-09-13 US US05/941,969 patent/US4177094A/en not_active Expired - Lifetime
- 1978-09-14 CA CA311,348A patent/CA1112375A/en not_active Expired
- 1978-09-16 JP JP11401578A patent/JPS5453684A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| US4177094A (en) | 1979-12-04 |
| GB2005011B (en) | 1982-02-10 |
| GB2005011A (en) | 1979-04-11 |
| JPS5652876B2 (en) | 1981-12-15 |
| DE2839535A1 (en) | 1979-03-29 |
| DE2839535C2 (en) | 1985-08-08 |
| IT7827637A0 (en) | 1978-09-13 |
| NL7710164A (en) | 1979-03-20 |
| FR2403647A1 (en) | 1979-04-13 |
| IT1099071B (en) | 1985-09-18 |
| JPS5453684A (en) | 1979-04-27 |
| FR2403647B1 (en) | 1982-11-19 |
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