CA2010030A1 - Method for transferring patterns on silicone ladder type resin and etching solution used in such method - Google Patents

Method for transferring patterns on silicone ladder type resin and etching solution used in such method

Info

Publication number
CA2010030A1
CA2010030A1 CA2010030A CA2010030A CA2010030A1 CA 2010030 A1 CA2010030 A1 CA 2010030A1 CA 2010030 A CA2010030 A CA 2010030A CA 2010030 A CA2010030 A CA 2010030A CA 2010030 A1 CA2010030 A1 CA 2010030A1
Authority
CA
Canada
Prior art keywords
ladder type
type resin
silicone ladder
resin
photo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2010030A
Other languages
French (fr)
Other versions
CA2010030C (en
Inventor
Hiroshi Adachi
Etsushi Adachi
Yoshiko Aiba
Osamu Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CA2010030A1 publication Critical patent/CA2010030A1/en
Application granted granted Critical
Publication of CA2010030C publication Critical patent/CA2010030C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks

Abstract

A method for transferring patterns on a silicone ladder type resin, which comprises: applying onto a substrate a silicone ladder type resin to be represented by the following general formula (I) (I) (where: R1 denotes a phenyl group or a lower alkyl group, and two R1's may be the same or different kinds; R2 denotes hydrogen atom or a lower alkyl group, and four R2's may be the same or different kinds; and n represents an integer of from 5 to 1,000); drying the thus applied resin layer; thereafter applying onto the resin layer a cresol novolac type positive photo-resist; forming a predetermined pattern in the photo-resist layer;
subjecting the photo-resist layer to pretreatment; and finally etching the silicone ladder type resin.
An etching liquid for etching a silicone ladder type resin, which comprises an aromatic type solvent.
CA002010030A 1989-02-23 1990-02-14 Method for transferring patterns on silicone ladder type resin and etching solution used in such method Expired - Fee Related CA2010030C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP44326/1989 1989-02-23
JP1044326A JP2542075B2 (en) 1989-02-23 1989-02-23 Method for transferring pattern to silicone ladder resin and etching solution used therefor

Publications (2)

Publication Number Publication Date
CA2010030A1 true CA2010030A1 (en) 1990-08-23
CA2010030C CA2010030C (en) 1997-01-21

Family

ID=12688379

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002010030A Expired - Fee Related CA2010030C (en) 1989-02-23 1990-02-14 Method for transferring patterns on silicone ladder type resin and etching solution used in such method

Country Status (6)

Country Link
US (1) US5087553A (en)
JP (1) JP2542075B2 (en)
KR (1) KR930003878B1 (en)
CA (1) CA2010030C (en)
DE (1) DE4005345C2 (en)
GB (2) GB2228582B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2646289B2 (en) * 1990-06-01 1997-08-27 富士写真フイルム株式会社 Resist composition
JP2752786B2 (en) * 1990-11-19 1998-05-18 三菱電機株式会社 Color filter surface protective film
JP2547944B2 (en) * 1992-09-30 1996-10-30 インターナショナル・ビジネス・マシーンズ・コーポレイション Method of forming sub-half micron pattern by optical lithography using a bilayer resist composition
JP2923408B2 (en) * 1992-12-21 1999-07-26 三菱電機株式会社 Method for producing high-purity silicone ladder polymer
TWI255957B (en) * 1999-03-26 2006-06-01 Hitachi Ltd Liquid crystal display device and method of manufacturing the same
DE69942040D1 (en) 1999-12-22 2010-04-01 Mitsubishi Electric Corp SENSOR DEVICE AND ITS MANUFACTURING METHOD.

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5348947A (en) * 1976-10-18 1978-05-02 Oki Electric Ind Co Ltd Photoethcing method for oxidized film
JPS5594955A (en) * 1979-01-12 1980-07-18 Hitachi Ltd Film-forming coating solution
JPS6046826B2 (en) * 1979-06-21 1985-10-18 富士通株式会社 semiconductor equipment
DE3065150D1 (en) * 1979-06-21 1983-11-10 Fujitsu Ltd Improved electronic device having multilayer wiring structure
JPS5633827A (en) * 1979-08-29 1981-04-04 Seiko Epson Corp Photo etching method including surface treatment of substrate
JPS56125855A (en) * 1980-03-07 1981-10-02 Fujitsu Ltd Manufacture of semiconductor device
JPS56135928A (en) * 1980-03-27 1981-10-23 Fujitsu Ltd Forming method for pattern of silicone resin
JPS57154830A (en) * 1980-10-31 1982-09-24 Fujitsu Ltd Forming method for pattern and structure of laminating
US4409319A (en) * 1981-07-15 1983-10-11 International Business Machines Corporation Electron beam exposed positive resist mask process
JPS59161827A (en) * 1983-03-04 1984-09-12 Nippon Telegr & Teleph Corp <Ntt> Method for processing insulating film
JPS60262150A (en) * 1984-06-11 1985-12-25 Nippon Telegr & Teleph Corp <Ntt> Intermediate layer for 3-layer resist material and method for using it
JPS6314432A (en) * 1986-07-07 1988-01-21 Nippon Telegr & Teleph Corp <Ntt> Pattern formation
JPH0740547B2 (en) * 1987-03-24 1995-05-01 ウシオ電機株式会社 Resist processing method
JPS63301521A (en) * 1987-06-01 1988-12-08 Nec Corp Formation of pattern
JPS6424424A (en) * 1987-07-21 1989-01-26 New Japan Radio Co Ltd Manufacture of semiconductor device
JP2608429B2 (en) * 1987-11-09 1997-05-07 東レ・ダウコーニング・シリコーン株式会社 Pattern forming material and pattern forming method

Also Published As

Publication number Publication date
KR930003878B1 (en) 1993-05-14
GB2228582B (en) 1993-06-16
GB9016212D0 (en) 1990-09-05
US5087553A (en) 1992-02-11
JPH02222537A (en) 1990-09-05
GB2237577B (en) 1992-11-04
GB2228582A (en) 1990-08-29
GB2237577A (en) 1991-05-08
GB9002812D0 (en) 1990-04-04
CA2010030C (en) 1997-01-21
DE4005345C2 (en) 1995-06-29
DE4005345A1 (en) 1990-08-30
JP2542075B2 (en) 1996-10-09
KR900013576A (en) 1990-09-06

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Legal Events

Date Code Title Description
EEER Examination request
MKLA Lapsed