CA2064726A1 - Monolithic semiconductor harmonic laser sources - Google Patents

Monolithic semiconductor harmonic laser sources

Info

Publication number
CA2064726A1
CA2064726A1 CA2064726A CA2064726A CA2064726A1 CA 2064726 A1 CA2064726 A1 CA 2064726A1 CA 2064726 A CA2064726 A CA 2064726A CA 2064726 A CA2064726 A CA 2064726A CA 2064726 A1 CA2064726 A1 CA 2064726A1
Authority
CA
Canada
Prior art keywords
laser sources
harmonic laser
monolithic semiconductor
semiconductor harmonic
waveguide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2064726A
Other languages
French (fr)
Other versions
CA2064726C (en
Inventor
Richard J. F. Normandin
Francoise Chatenoud
Robin L. Williams
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Research Council of Canada
Original Assignee
National Research Council of Canada
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Research Council of Canada filed Critical National Research Council of Canada
Publication of CA2064726A1 publication Critical patent/CA2064726A1/en
Application granted granted Critical
Publication of CA2064726C publication Critical patent/CA2064726C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
    • G02F1/3534—Three-wave interaction, e.g. sum-difference frequency generation
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/355—Non-linear optics characterised by the materials used
    • G02F1/3556—Semiconductor materials, e.g. quantum wells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0604—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising a non-linear region, e.g. generating harmonics of the laser frequency
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0608—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/06243—Controlling other output parameters than intensity or frequency controlling the position or direction of the emitted beam

Abstract

Harmonic generation laser sources are disclosed. The sources include a waveguide having a multilayered structure to enhance the harmonic generation. Various embodiments are described, some including an active lasing means built in the waveguide.
CA002064726A 1990-06-29 1991-06-27 Monolithic semiconductor harmonic laser sources Expired - Fee Related CA2064726C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/545,497 US5051617A (en) 1990-06-29 1990-06-29 Multilayer semiconductor waveguide device for sum frequency generation from contra-propagating beams
US545,497 1990-06-29

Publications (2)

Publication Number Publication Date
CA2064726A1 true CA2064726A1 (en) 1991-12-30
CA2064726C CA2064726C (en) 1996-09-17

Family

ID=24176484

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002064726A Expired - Fee Related CA2064726C (en) 1990-06-29 1991-06-27 Monolithic semiconductor harmonic laser sources

Country Status (6)

Country Link
US (1) US5051617A (en)
EP (1) EP0494274B1 (en)
JP (1) JP2693269B2 (en)
CA (1) CA2064726C (en)
DE (1) DE69114257D1 (en)
WO (1) WO1992000548A1 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2658620B1 (en) * 1990-02-16 1992-04-30 Thomson Csf OPTICAL COMPONENT FOR APPLICATIONS IN INTEGRATED OPTICS.
CA2028506C (en) * 1990-10-25 2001-07-17 National Research Council Of Canada Optical multilayer structures for harmonic laser emission
US5249193A (en) * 1991-03-20 1993-09-28 Brother Kogyo Kabushiki Kaisha Solid-state laser system
JPH05259567A (en) * 1992-03-13 1993-10-08 Nippon Telegr & Teleph Corp <Ntt> Waveguide type multiple quantum well light control element
KR940007557A (en) * 1992-09-07 1994-04-27 에프. 제이. 스미트 Optical elements and optoelectronic devices for raising electromagnetic radiation frequencies
US5345456A (en) * 1993-03-11 1994-09-06 National Research Council Of Canada Spatially addressable surface emission sum frequency device
US5387972A (en) * 1993-03-15 1995-02-07 National Research Council Of Canada Coherent phase and frequency detection using sum-frequency mixing in non-linear waveguides
JPH0730181A (en) * 1993-06-30 1995-01-31 Hewlett Packard Co <Hp> Surface luminous second harmonic generating device
US5422903A (en) * 1993-04-15 1995-06-06 Yamada; Norihide Surface emitting second harmonic generating device
US5436920A (en) * 1993-05-18 1995-07-25 Matsushita Electric Industrial Co., Ltd. Laser device
US5408110A (en) * 1993-06-28 1995-04-18 National Research Council Of Canada Second-harmonic generation in semiconductor heterostructures
US5375011A (en) * 1993-08-18 1994-12-20 National Research Council Of Canada Non-linear, real-time, micrometer resolution optical time domain reflectometers for optoelectronic circuits diagnostic and sensing applications
JP2002198612A (en) * 2000-12-25 2002-07-12 Nippon Sheet Glass Co Ltd Wavelength-monitoring device
US6845186B2 (en) * 2002-03-14 2005-01-18 Nippon Sheet Glass Co., Ltd. Optical circuit with harmonic generator
US9880445B1 (en) * 2015-06-19 2018-01-30 Stc.Unm Harmonic generation using optimized stack of thin films

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3746879A (en) * 1972-05-25 1973-07-17 Ibm Superlattice harmonic generator & mixer for electromagnetic waves
US3982135A (en) * 1975-01-14 1976-09-21 Bell Telephone Laboratories, Incorporated Phase matching in a laminar structure
US4382660A (en) * 1976-06-16 1983-05-10 Massachusetts Institute Of Technology Optical transistors and logic circuits embodying the same
JPS60123084A (en) * 1983-12-08 1985-07-01 Matsushita Electric Ind Co Ltd Semiconductor light generator
US4904038A (en) * 1984-05-30 1990-02-27 Litton Systems, Inc. Guided wave optical frequency shifter
DE3611182A1 (en) * 1986-04-03 1987-10-08 Robert Dr Schimpe DEVICE FOR INFLUENCING WAVES, IN PARTICULAR LIGHT WAVES
US4743083A (en) * 1985-12-30 1988-05-10 Schimpe Robert M Cylindrical diffraction grating couplers and distributed feedback resonators for guided wave devices
US4763019A (en) * 1986-09-09 1988-08-09 American Telephone And Telegraph Company, At&T Bell Laboratories Apparatus comprising harmonic generation means
US4930132A (en) * 1987-12-28 1990-05-29 Canon Kabushiki Kaisha Second harmonic wave generating device having active layer and second harmonic wave generating layer on same substrate
US4896195A (en) * 1988-03-14 1990-01-23 Trw Inc. Superluminescent diode
US4904045A (en) * 1988-03-25 1990-02-27 American Telephone And Telegraph Company Grating coupler with monolithically integrated quantum well index modulator
WO1990003055A1 (en) * 1988-09-01 1990-03-22 Seiko Epson Corporation Light emitting device and method of producing the same
US4948960A (en) * 1988-09-20 1990-08-14 The University Of Delaware Dual mode light emitting diode/detector diode for optical fiber transmission lines
US4905253A (en) * 1989-01-27 1990-02-27 American Telephone And Telegraph Company Distributed Bragg reflector laser for frequency modulated communication systems
DE8902040U1 (en) * 1989-02-21 1989-06-01 Griesemer, Albert, 5438 Westerburg, De

Also Published As

Publication number Publication date
WO1992000548A1 (en) 1992-01-09
US5051617A (en) 1991-09-24
EP0494274B1 (en) 1995-11-02
JP2693269B2 (en) 1997-12-24
EP0494274A1 (en) 1992-07-15
CA2064726C (en) 1996-09-17
DE69114257D1 (en) 1995-12-07
JPH04505224A (en) 1992-09-10

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