CA2464083A1 - Substrate for epitaxy - Google Patents

Substrate for epitaxy Download PDF

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Publication number
CA2464083A1
CA2464083A1 CA002464083A CA2464083A CA2464083A1 CA 2464083 A1 CA2464083 A1 CA 2464083A1 CA 002464083 A CA002464083 A CA 002464083A CA 2464083 A CA2464083 A CA 2464083A CA 2464083 A1 CA2464083 A1 CA 2464083A1
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Canada
Prior art keywords
crystal
mono
nitride
bulk
gallium
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CA002464083A
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French (fr)
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CA2464083C (en
Inventor
Robert Dwilinski
Roman Doradzinski
Jerzy Garczynski
Leszek P. Sierzputowski
Yasuo Kanbara
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Nichia Corp
Ammono Sp zoo
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Individual
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Priority claimed from PL35037501A external-priority patent/PL350375A1/en
Priority claimed from PL354740A external-priority patent/PL205838B1/en
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Publication of CA2464083A1 publication Critical patent/CA2464083A1/en
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Publication of CA2464083C publication Critical patent/CA2464083C/en
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0281—Coatings made of semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Abstract

The invention relates to a substrate for epitaxy, especially for preparation of nitride semiconductor layers. Invention covers a bulk nitride mono-crystal characterized in that it is a mono-crystal of gallium nitride and its cross-section in a plane perpendicular to c-axis of hexagonal lattice of gallium nitride has a surface area greater than 100 mm2, it is more than 1,0 µm thick and its C-plane surface dislocation density is less than 106/cm2, while its volume is sufficient to produce at least one further-processable non-polar A-plane or M-plane plate having a surface area at least 100 mm2. More generally, the present invention covers a bulk nitride mono-crystal which is characterized in that it is a mono-crystal of gallium-containing nitride and its cross-section in a plane perpendicular to c-axis of hexagonal lattice of gallium-containing nitride has a surface area greater than 100 mm2, it is more 1,0 µm thick and its surface dislocation density is less than 106/cm2. Mono-crystals according to the present invention are suitable for epitaxial growth of nitride semiconductor layers. Due to their good crystalline quality they are suitable for use in opto-electronics for manufacturing opto-electronic semiconductor devices based on nitrides, in particular for manufacturing semiconductor laser diodes and laser devices. The a.m bulk mono-crystals of gallium-containing nitride are crystallized on seed crystals. Various seed crystals may be used. The bulk mono-crystals of gallium-containing nitride are crystallized by a method involving dissolution of a gallium-containing feedstock in a supercritical solvent and crystallization of a gallium nitride on a surface of seed crystal, at temperature higher and/or pressure lower than in the dissolution process.

Claims (55)

Claims
1. A bulk nitride mono-crystal characterized in that it is a mono-crystal of gallium nitride and its cross-section in a plane perpendicular to c-axis of hexagonal lattice of gallium nitride has a surface area greater than 100 mm2, it is more than 1,0 µm thick and its C-plane surface dislocation density is less than 10 6/cm2, while its volume is sufficient to produce at least one further-processable non-polar A-plane or M-plane plate having a surface area, preferably at least 100 mm2.
2. A bulk nitride mono-crystal according to claims 1, characterized in that its quality does not deteriorate with thickness.
3. A bulk nitride mono-crystal according to claim 1 or 2, characterized in that it contains also elements of Group I (IUPAC 1989).
4. A bulk nitride mono-crystal according to any one of the preceding claims 1 to 3, characterized in that it contains also elements such as Ti, Fe, Co, Cr and Ni.
5. A bulk nitride mono-crystal according to any one of the preceding claims 1 to 4, characterized in that additionally it contains donor and/or acceptor and/or magnetic dopants in concentrations from 10 17 / cm3 to 10 21 cm3.
6. A bulk nitride mono-crystal according to any one of the preceding claims 1 to 5, characterized in that it is crystallized on a surface of a seed crystal.
7. A bulk nitride mono-crystal according to claim 6, characterized in that a seed crystal is a gallium-nitride seed crystal.
8. A bulk nitride mono-crystal according to claim 7, characterized in that a seed is in form of a flat plate with two parallel faces perpendicular to c-axis of hexagonal lattice of gallium nitride, while the bulk mono-crystal of gallium nitride is crystallized on the nitrogen-terminated (000-1) face of the seed only. the gallium-terminated (0001) face being blocked in order to prevent growth of gallium nitride mono-crystal thereon.
9. A bulk nitride mono-crystal according to claim 6, characterized in that a seed crystal is a hetero-seed made of sapphire, silicon carbide or the like, with a top nitride buffer layer at least on its C-plane, consisting essentially of gallium nitride, and the bulk nitride mono-crystal is crystallized on the buffer layer, while at least one, preferably all the remaining surfaces of the hetero-seed are covered with a protective mask.
10. A bulk nitride mono-crystal according to any one of the preceding claims 6 to 9, characterized in that it is crystallized on a plurality of surfaces susceptible for lateral growth of the nitride, the surfaces being spaced apart from each other and the remaining surfaces of the seed crystal are covered with a protective mask.
11. A bulk nitride mono-crystal according to any one of the preceding claims 1 to 10, characterized in that its surface dislocation density on nitrogen-terminated face is close to 104/cm2 and at the same time the full width at half maximum (FWHM) of the X-ray rocking curve is close to 60 arcsec.
12. A bulk nitride mono-crystal characterized in that it is a mono-crystal of gallium-containing nitride and its cross-section in a plane perpendicular to c-axis of hexagonal lattice of gallium-containing nitride has a surface area greater than 100 mm2, it is more than 1,0 µm thick and its surface dislocation density is less than 10 6/cm2.
13. A bulk nitride mono-crystal according to claim 12, characterized in that it is essentially flat so that its curving is less than 20 micron.
14. A bulk nitride mono-crystal according to claim 12, characterized in that it has a high value of more than 10E5 .OMEGA./cm2 in a sheet resistance, preferably more 10E7.OMEGA./cm2.
15. A bulk nitride mono-crystal according to any one of the preceding claims 12 to 14, characterized in that it is at least 100 µm thick.
16. A bulk nitride mono-crystal according to claim 15, characterized in that its volume is sufficient to produce at least one further-processable non-polar A-plane or M-plane plate having a surface area at least 100 mm2.
17. A bulk nitride mono-crystal according to any one of the preceding claims 12 to 16, characterized in that it has a surface area greater than 2 cm2, preferably greater than 5 cm2 (diameter of 1 inch) in form of a flat plane perpendicular to c-axis of its hexagonal lattice.
18. A bulk nitride mono-crystal according to any one of the preceding claims 12 to 17, characterized in that its quality does not deteriorate with thickness.
19. A bulk nitride mono-crystal according to any one of the preceding claims 12 to 18, characterized in that it contains also elements of Group I (IUPAC 1989).
20. A bulk nitride mono-crystal according to any one of the preceding claims 12 to 19, characterized in that it contains also elements such as Ti, Fe, Co, Cr and Ni.
21. A bulk nitride mono-crystal according to any one of the preceding claims 12 to 20, characterized in that additionally it contains donor and/or acceptor and/or magnetic dopants in concentrations from 10 17 / cm3 to 10 21 cm3.
22. A bulk nitride mono-crystal according to any one of the preceding claims 12 to 21, characterized in that it is crystallized on a surface of a seed crystal.
23. A bulk nitride mono-crystal according to claim 22, characterized in that a seed crystal is a gallium-containing nitride seed crystal.
24. A bulk nitride mono-crystal according to claim 23, characterized in that a seed crystal has the same composition as the bulk nitride mono-crystal (homo-seed).
25. A bulk nitride mono-crystal according to claim 24, characterized in that both a seed crystal and the bulk nitride mono-crystal consist essentially of gallium nitride.
26. A bulk nitride mono-crystal according to claim 22, characterized in that a seed crystal is a hetero-seed made of sapphire, silicon carbide or the like, with a top nitride buffer layer at least on its one side and the bulk nitride mono-crystal is crystallized on the buffer layer, while at least one, preferably all the remaining surfaces of the hetero-seed are covered with a protective mask.
27. A bulk nitride mono-crystal according to claim 26, characterized in that a top nitride buffer layer and the bulk nitride mono-crystal crystallized on the buffer layer consist essentially of gallium nitride.
28. A bulk nitride mono-crystal according to any one of the preceding claims 22 to 27, characterized in that it is crystallized on a plurality of surfaces susceptible for lateral growth of the nitride, the surfaces being spaced apart from each other and the remaining surfaces of the seed crystal are covered with a protective mask.
29. A bulk nitride mono-crystal according to any one of the preceding claims 22 to 28, characterized in that it is crystallized on a homo-seed crystal in form of a plate with two parallel planes essentially perpendicular to c-axis of its hexagonal lattice and the bulk mono-crystal is crystallized on all surfaces of the seed crystal.
30. A bulk nitride mono-crystal according to claim 29, characterized in that a seed and the bulk nitride mono-crystal consist essentially of gallium nitride and the seed is in form of a flat plate with two parallel faces perpendicular to c-axis of hexagonal lattice of gallium-containing nitride, (0001) and (000-1), while two bulk mono-crystals of gallium nitride are crystallized on both such faces of the seed crystal.
31. A bulk nitride mono-crystal according to claim 30, characterized in that it is crystallized on a seed with one of the faces perpendicular to c-axis of hexagonal lattice of gallium-containing nitride, (0001) or (000-1), covered by metallic plate made preferably of silver.
32. A bulk nitride mono-crystal according to claim 30, characterized in that it is crystallized on a seed with one of the faces perpendicular to c-axis of hexagonal lattice of gallium-containing nitride, (0001) or (000-1), coated by metallic layer, preferably made of silver.
33. A bulk nitride mono-crystal according to claim 30, characterized in that it is crystallized on a seed with one of the faces perpendicular to c-axis of hexagonal lattice of gallium-containing nitride, (0001) or (000-1), blocked by arranging on that plane of the seed a second seed crystal of the same size with the same face: (0001) or (000-1) facing the corresponding face to be blocked of the first seed.
34. A bulk nitride mono-crystal according to any preceding claims 31 to 33, characterized in that it is crystallized on nitrogen-terminated (000-1) face of the seed only.
35. A bulk nitride mono-crystal according to claim 34, characterized in that it has a better surface quality than a bulk mono-crystal that can be crystallized on gallium-terminated (0001) face of the seed crystal.
36. A bulk nitride mono-crystal according to claim 34, characterized in that it has lower surface dislocation density than a bulk mono-crystal that can be crystallized on gallium-terminated (0001) face of the seed crystal.
37. A bulk nitride mono-crystal according to claim 34, characterized in that it has a better electrical resistivity than a bulk mono-crystal that can be crystallized on gallium-terminated (0001) face of the seed crystal.
38. A bulk nitride mono-crystal according to claim 34, characterized in that it has lower values of full width at half maximum (FWHM) of the X-ray rocking curve than a bulk mono-crystal that can be crystallized on gallium-terminated (0001) face of the seed crystal.
39. A bulk nitride mono-crystal according to any one of the preceding claims 34 to 38, characterized in that its surface dislocation density on nitrogen-terminated face is close to 10 4/cm2 and at the same time the FWHM of the X-ray rocking curve is close to 60 arcsec.
40. A bulk nitride mono-crystal according to any one of claims 1 to 39, characterized in that it is obtained by a method involving dissolution of a respective Group XIII (IUPAC, 1989) elements feedstock in a supercritical solvent with over-saturation of the supercritical solution with respect to the desired gallium-containing nitride being reached by means of temperature gradient and/or pressure change and crystallization of a desired gallium-containing nitride on a surface of seed crystal.
at temperature higher and/or pressure lower than in the dissolution process.
41. A bulk nitride mono-crystal according to claims 40 , characterized in that the supercritical solvent contains NH3 and/or its derivatives, and includes ions of elements of Group I (IUPAC 1989) - at least potassium or sodium ions, the feedstock consists essentially of gallium-containing nitride and/or its precursors, selected from a group including azides, imides, amido-imides, amides, hydrides, gallium-containing metal compounds and alloys, as well as metallic Group XIII (IUPAC, 1989) elements, especially metallic gallium.
42. A bulk nitride mono-crystal according to claim 41, characterized in that in the process in which it is obtained crystallization of gallium-containing nitride takes place in an autoclave, at temperatures from 100°C to 800°C and at pressures from 10 MPa to 1000 MPa and a molar ratio of ions of elements of Group I (IUPAC 199) to the remaining components of the supercritical solvent ranges from 1:200 to 1:2.
434. A bulk nitride mono-crystal according to claim 41, characterized in that as a source of alkali metal ions alkali metals or alkali metal compounds, excluding those containing halogens, are used.
44. A bulk nitride mono-crystal according to claim 41, characterized in that its crystallization is controlled by means of adjusting temperature and pressure of dissolution step and temperature and pressure of crystallization step.
45. A bulk nitride mono-crystal according to claim 44, characterized in that it is crystallized at temperature ranging from 400 to 600 °C.
46. A bulk nitride mono-crystal according to claim 41, characterized in that it is crystallized in an autoclave with two separated zones. dissolution zone and crystallization zone, and with a temperature difference between the two zones during crystallization not higher than 150°C, preferably not higher than 100°C.
47. A bulk nitride mono-crystal according to claim 46, characterized in that it is crystallized while controlling over-saturation of supercritical solution in the crystallization zone of the autoclave with the two separated zones, and maintaining a predetermined temperature difference between the two zones by using a baffle or baffles separating the two zones, in order to control a chemical (mass) transport between the two zones.
48. A bulk nitride mono-crystal according to claim 46 or 47, characterized in that control of over-saturation of supercritical solution in the crystallization zone of the autoclave with two separate zones and with a predetermined temperature difference between the two zones - is achieved by means of using a feedstock material containing gallium in a form of a corresponding nitride crystals having a total surface area higher than a total surface area of seed crystals used.
49. A bulk nitride mono-crystal grown in a direction parallel to c-axis of hexagonal lattice of gallium nitride seed in a supercritical NH3 containing gallium-complex compounds at Ga:NH3 molar ratio of more than 1:50, in order to have a thickness high enough to obtain at least one further-processable A-plane or M-plane gallium-nitride substrate.
50. A bulk nitride mono-crystal grown on a seed having no substantial tilted crystal axis by means of a supercritical NH3 containing gallium-complex compounds, having not so much surface roughness as to decrease lifetime of a nitride semiconductor device formed thereon.
51. A bulk nitride mono-crystal according to any one of preceding claims 1 to 50, characterized in that it is suitable for epitaxial growth of nitride semiconductor layers.
52. Use of a bulk nitride mono-crystal according to any one of claims 1 to 51 as a substrate for epitaxy.
53. Use according to claim 52 characterized in that a substrate for epitaxy has a form of c-oriented GaN bulk mono-crystal of 2-inch diameter.
54. Use according to claim 52 characterized in that a substrate for epitaxy has a form of A- or M-plane gallium-containing nitride mono-crystal plate having a further-processable surface area of at least 100 mm2.
55. Use according to claim 52 3 characterized in that a substrate for epitaxy has a form of A- or M-plane GaN mono-crystal plate having a further-processable surface area of at least 100 mem2.
CA2464083A 2001-10-26 2002-10-25 Substrate for epitaxy Expired - Lifetime CA2464083C (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
PL35037501A PL350375A1 (en) 2001-10-26 2001-10-26 Epitaxial layer substrate
PLP-350375 2001-10-26
PLP-354740 2002-06-26
PL354740A PL205838B1 (en) 2002-06-26 2002-06-26 Epitaxy substrate
PCT/PL2002/000077 WO2003035945A2 (en) 2001-10-26 2002-10-25 Substrate for epitaxy

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CA2464083A1 true CA2464083A1 (en) 2003-05-01
CA2464083C CA2464083C (en) 2011-08-02

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US (2) US7132730B2 (en)
EP (1) EP1442162B1 (en)
JP (2) JP4693351B2 (en)
KR (1) KR100904501B1 (en)
CN (1) CN1316070C (en)
AT (1) ATE452999T1 (en)
AU (1) AU2002347692C1 (en)
CA (1) CA2464083C (en)
DE (1) DE60234856D1 (en)
HU (1) HUP0401882A3 (en)
IL (2) IL161420A0 (en)
NO (1) NO20042119D0 (en)
PL (1) PL225235B1 (en)
RU (1) RU2312176C2 (en)
TW (1) TWI231321B (en)
UA (1) UA82180C2 (en)
WO (1) WO2003035945A2 (en)

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