CA2467030A1 - Method of forming particles for use in chemical-mechanical polishing slurries and the particles formed by the process - Google Patents
Method of forming particles for use in chemical-mechanical polishing slurries and the particles formed by the process Download PDFInfo
- Publication number
- CA2467030A1 CA2467030A1 CA002467030A CA2467030A CA2467030A1 CA 2467030 A1 CA2467030 A1 CA 2467030A1 CA 002467030 A CA002467030 A CA 002467030A CA 2467030 A CA2467030 A CA 2467030A CA 2467030 A1 CA2467030 A1 CA 2467030A1
- Authority
- CA
- Canada
- Prior art keywords
- particles
- titanium
- solution
- crystallization promoter
- compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract 17
- 239000002245 particle Substances 0.000 title claims abstract 11
- 238000005498 polishing Methods 0.000 title claims abstract 3
- 239000002002 slurry Substances 0.000 title claims abstract 3
- 238000002425 crystallisation Methods 0.000 claims abstract 6
- 230000008025 crystallization Effects 0.000 claims abstract 6
- 239000000243 solution Substances 0.000 claims abstract 6
- 150000000703 Cerium Chemical class 0.000 claims abstract 3
- 239000003082 abrasive agent Substances 0.000 claims abstract 2
- 238000010335 hydrothermal treatment Methods 0.000 claims abstract 2
- 239000012266 salt solution Substances 0.000 claims abstract 2
- 150000003609 titanium compounds Chemical class 0.000 claims 3
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 claims 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- 238000000354 decomposition reaction Methods 0.000 claims 2
- 230000001934 delay Effects 0.000 claims 2
- 150000003839 salts Chemical class 0.000 claims 2
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 claims 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims 1
- 229920002873 Polyethylenimine Polymers 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 239000000908 ammonium hydroxide Substances 0.000 claims 1
- PCCNIENXBRUYFK-UHFFFAOYSA-O azanium;cerium(4+);pentanitrate Chemical group [NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O PCCNIENXBRUYFK-UHFFFAOYSA-O 0.000 claims 1
- XFVGXQSSXWIWIO-UHFFFAOYSA-N chloro hypochlorite;titanium Chemical compound [Ti].ClOCl XFVGXQSSXWIWIO-UHFFFAOYSA-N 0.000 claims 1
- 229940031098 ethanolamine Drugs 0.000 claims 1
- 229910052746 lanthanum Inorganic materials 0.000 claims 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- DCKVFVYPWDKYDN-UHFFFAOYSA-L oxygen(2-);titanium(4+);sulfate Chemical compound [O-2].[Ti+4].[O-]S([O-])(=O)=O DCKVFVYPWDKYDN-UHFFFAOYSA-L 0.000 claims 1
- 229910052706 scandium Inorganic materials 0.000 claims 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims 1
- 229910000348 titanium sulfate Inorganic materials 0.000 claims 1
- UBZYKBZMAMTNKW-UHFFFAOYSA-J titanium tetrabromide Chemical compound Br[Ti](Br)(Br)Br UBZYKBZMAMTNKW-UHFFFAOYSA-J 0.000 claims 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F17/00—Compounds of rare earth metals
- C01F17/20—Compounds containing only rare earth metals as the metal element
- C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
- C01F17/224—Oxides or hydroxides of lanthanides
- C01F17/235—Cerium oxides or hydroxides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G23/00—Compounds of titanium
- C01G23/04—Oxides; Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G23/00—Compounds of titanium
- C01G23/04—Oxides; Hydroxides
- C01G23/047—Titanium dioxide
- C01G23/053—Producing by wet processes, e.g. hydrolysing titanium salts
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C19/00—Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
- C09C1/00—Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
- C09C1/36—Compounds of titanium
- C09C1/3607—Titanium dioxide
- C09C1/3653—Treatment with inorganic compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/50—Solid solutions
- C01P2002/52—Solid solutions containing elements as dopants
- C01P2002/54—Solid solutions containing elements as dopants one element only
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/60—Compounds characterised by their crystallite size
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/76—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by a space-group or by other symmetry indications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/51—Particles with a specific particle size distribution
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/90—Other properties not specified above
Abstract
The present invention provides a process for producing particles suitable fo r use as abrasives in chemical-mechanical polishing slurries. The process according to the invention includes adding a crystallization promoter such a s Ti[OCH(CH3)2)]4 to an aqueous cerium salt solution, adjusting the pH of the solution to higher than 7.0 using one or more bases, and subjecting the solution to hydrothermal treatment at a temperature of from 90~C to about 500~C to produce the particles.
Claims (13)
1. A process for producing particles suitable for use as abrasives in chemical-mechanical polishing slurries comprising adding a crystallization promoter to an aqueous cerium salt solution, adjusting the pH of the solution to above 7.0 using one or more bases, and subjecting said solution to hydrothermal treatment at a temperature of from about 90 °C to about 500 °C
to produce said particles.
to produce said particles.
2. The process as in claim 1 wherein said particles have a mean average particle size (D50) within the range of from about 5 nm to about 1000 nm.
3. The process as in claim 1 wherein said particles have an average crystallite size of greater than about 60 .ANG..
4. The process as in claim 1 wherein said particles have an average crystallite size of greater than about 200 .ANG..
5. The process as in claim 1 wherein said cerium salt is ammonium cerium(IV) nitrate.
6. The process as in claim 1 wherein said crystallization promoter comprises a titanium compound.
7. The process as in claim 6 wherein said titanium compound is selected from the group consisting of titanium(IV) isopropoxide, titanium chloride, titanium sulfate, titanium bromide, and titanium oxychloride.
8. The process as in claim 6 wherein said titanium compound is titanium(IV) isopropoxide.
9. The process as in claim 1 wherein said crystallization promoter comprises a salt of lanthanum, scandium, aluminum, or a mixture of such salts.
10. The process as in claim 1 wherein said solution further comprises one or more bases selected from the group consisting of ammonium hydroxide, ethyl amine, ethanol amine, and polyethylene imine.
11. The process as in claim 1 wherein said solution further comprises a compound that delays the aqueous decomposition of the crystallization promoter.
12. The process as in claim 11 wherein said compound that delays the aqueous decomposition of the crystallization promoter comprises acetyl acetone.
13. Particles formed according to the process as in claim 1.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/992,485 | 2001-11-16 | ||
US09/992,485 US6596042B1 (en) | 2001-11-16 | 2001-11-16 | Method of forming particles for use in chemical-mechanical polishing slurries and the particles formed by the process |
PCT/US2002/035373 WO2003044122A1 (en) | 2001-11-16 | 2002-11-04 | Particles for use in cmp slurries and method for producing them |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2467030A1 true CA2467030A1 (en) | 2003-05-30 |
CA2467030C CA2467030C (en) | 2010-10-12 |
Family
ID=25538391
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA2467030A Expired - Fee Related CA2467030C (en) | 2001-11-16 | 2002-11-04 | Method of forming particles for use in chemical-mechanical polishing slurries and the particles formed by the process |
Country Status (7)
Country | Link |
---|---|
US (2) | US6596042B1 (en) |
EP (1) | EP1444309A4 (en) |
JP (1) | JP4202257B2 (en) |
KR (1) | KR20050043789A (en) |
CN (1) | CN1296454C (en) |
CA (1) | CA2467030C (en) |
WO (1) | WO2003044122A1 (en) |
Families Citing this family (35)
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US7666239B2 (en) * | 2001-11-16 | 2010-02-23 | Ferro Corporation | Hydrothermal synthesis of cerium-titanium oxide for use in CMP |
WO2003044123A1 (en) * | 2001-11-16 | 2003-05-30 | Ferro Corporation | Particles for use in cmp slurries and method for producing them |
US6596042B1 (en) * | 2001-11-16 | 2003-07-22 | Ferro Corporation | Method of forming particles for use in chemical-mechanical polishing slurries and the particles formed by the process |
US20060032836A1 (en) * | 2001-11-16 | 2006-02-16 | Ferro Corporation | Methods of controlling the properties of abrasive particles for use in chemical-mechanical polishing slurries |
KR100477939B1 (en) * | 2002-04-15 | 2005-03-18 | 주식회사 엘지화학 | Mehtod for preparing single craystalline cerium oxide powders |
KR100560223B1 (en) * | 2002-06-05 | 2006-03-10 | 삼성코닝 주식회사 | Metal oxide powder for high precision polishing and preparation thereof |
US20040137828A1 (en) * | 2002-07-17 | 2004-07-15 | Hoya Corporation | Glass substrate for a mask blank, method of producing a glass substrate for a mask blank, mask blank, method of producing the mask blank, transfer mask, and method of producing a transfer mask |
US20040198584A1 (en) | 2003-04-02 | 2004-10-07 | Saint-Gobain Ceramics & Plastic, Inc. | Nanoporous ultrafine alpha-alumina powders and freeze drying process of preparing same |
US7422730B2 (en) | 2003-04-02 | 2008-09-09 | Saint-Gobain Ceramics & Plastics, Inc. | Nanoporous ultrafine α-alumina powders and sol-gel process of preparing same |
KR100574984B1 (en) * | 2004-08-16 | 2006-05-02 | 삼성전자주식회사 | Cerium oxide polishing particles, slurry for CMP, methods for preparing the same, and methods for polishing substrate |
WO2007043817A1 (en) * | 2005-10-14 | 2007-04-19 | Lg Chem, Ltd. | Method for preparing of cerium oxide powder for chemical mechanical polishing and method for preparing of chemical mechanical polishing slurry using the same |
CN100357362C (en) * | 2005-12-26 | 2007-12-26 | 内蒙古科技大学 | Process for preparing super fine cerium oxide for polishing |
DE102006035644A1 (en) * | 2006-07-31 | 2008-02-14 | Advanced Micro Devices, Inc., Sunnyvale | A method of reducing contamination by providing a polymeric protective layer to be removed during processing of microstructures |
US7837888B2 (en) * | 2006-11-13 | 2010-11-23 | Cabot Microelectronics Corporation | Composition and method for damascene CMP |
WO2009073304A1 (en) * | 2007-12-05 | 2009-06-11 | 3M Innovative Properties Company | Buffing composition comprising a slubilized zirconium carboxylate and method of finishing a surface of a material |
KR20100004181A (en) * | 2008-07-03 | 2010-01-13 | 삼성전자주식회사 | Slurry composition for a chemical mechanical polishing, method of preparing the slurry composition and method of polishing an object using the slurry composition |
CN101696345B (en) * | 2009-10-21 | 2013-09-18 | 南昌大学 | Aluminum doped cerium rouge and preparation method thereof |
US8436052B2 (en) * | 2010-01-07 | 2013-05-07 | Jack L. Collins | Formulation and method for preparing gels comprising hydrous cerium oxide |
CN102408128A (en) * | 2010-09-20 | 2012-04-11 | 东北大学 | Additive for removing trace iron during hydrolysis of titanium sulfate solution |
US20120264303A1 (en) * | 2011-04-15 | 2012-10-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chemical mechanical polishing slurry, system and method |
JP5923418B2 (en) * | 2012-09-18 | 2016-05-24 | 国立大学法人九州大学 | Method for producing cerium oxide particles |
US10293458B2 (en) * | 2013-09-25 | 2019-05-21 | 3M Innovative Properties Company | Composite ceramic abrasive polishing solution |
JP6124832B2 (en) * | 2014-04-03 | 2017-05-10 | 住友金属鉱山株式会社 | Infrared shielding material fine particle production method, infrared shielding material fine particle dispersion production method, infrared shielding material fine particle, infrared shielding material fine particle powder, infrared shielding material fine particle dispersion, infrared shielding material fine particle dispersion, and coated substrate |
JP6159284B2 (en) * | 2014-04-03 | 2017-07-05 | 住友金属鉱山株式会社 | Method for producing metal oxide fine particles, metal oxide fine particles, and powder, dispersion, dispersion and coated substrate |
CN103923570A (en) * | 2014-05-06 | 2014-07-16 | 济南大学 | Preparation method of rare earth-doped silicon carbide composite polishing powder |
JP6167069B2 (en) * | 2014-05-29 | 2017-07-19 | 住友金属鉱山株式会社 | Infrared shielding material fine particle production method and infrared shielding material fine particle dispersion production method |
JP2018501637A (en) * | 2014-10-30 | 2018-01-18 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Nanoparticle-based cerium oxide slurry |
JP6654696B2 (en) | 2015-07-10 | 2020-02-26 | フエロ コーポレーション | Slurry composition and method for polishing organic polymer ophthalmic substrate, and ophthalmic lens |
WO2017030710A1 (en) | 2015-08-19 | 2017-02-23 | Ferro Corporation | Slurry composition and method of use |
WO2018038885A1 (en) | 2016-08-26 | 2018-03-01 | Ferro Corporation | Slurry composition and method of selective silica polishing |
JP6827318B2 (en) * | 2016-12-28 | 2021-02-10 | 花王株式会社 | Cerium oxide abrasive grains |
US10319601B2 (en) | 2017-03-23 | 2019-06-11 | Applied Materials, Inc. | Slurry for polishing of integrated circuit packaging |
CN110137346B (en) * | 2019-06-18 | 2023-04-18 | 西安工业大学 | Manganese-doped holmium ferrite HoMn x Fe 1-x O 3 Preparation method of magnetoelectric material |
KR102282872B1 (en) | 2019-11-11 | 2021-07-28 | 주식회사 켐톤 | Fabrication method of cerium oxide particles, polishing particles and slurry composition comprising the same |
CN115160935B (en) * | 2022-08-26 | 2023-08-25 | 江南大学 | Octahedral cerium oxide abrasive particle polishing solution and preparation method and application thereof |
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-
2001
- 2001-11-16 US US09/992,485 patent/US6596042B1/en not_active Expired - Lifetime
-
2002
- 2002-09-25 US US10/255,136 patent/US6818030B2/en not_active Expired - Lifetime
- 2002-11-04 CN CNB02822664XA patent/CN1296454C/en not_active Expired - Fee Related
- 2002-11-04 WO PCT/US2002/035373 patent/WO2003044122A1/en active IP Right Grant
- 2002-11-04 CA CA2467030A patent/CA2467030C/en not_active Expired - Fee Related
- 2002-11-04 EP EP02792227A patent/EP1444309A4/en not_active Withdrawn
- 2002-11-04 KR KR1020047007234A patent/KR20050043789A/en not_active Application Discontinuation
- 2002-11-04 JP JP2003545749A patent/JP4202257B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN1585811A (en) | 2005-02-23 |
JP2005509725A (en) | 2005-04-14 |
US6596042B1 (en) | 2003-07-22 |
US20030093957A1 (en) | 2003-05-22 |
CA2467030C (en) | 2010-10-12 |
CN1296454C (en) | 2007-01-24 |
EP1444309A4 (en) | 2007-07-18 |
AU2002357690A1 (en) | 2003-06-10 |
WO2003044122A1 (en) | 2003-05-30 |
US6818030B2 (en) | 2004-11-16 |
KR20050043789A (en) | 2005-05-11 |
EP1444309A1 (en) | 2004-08-11 |
JP4202257B2 (en) | 2008-12-24 |
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