CN100399168C - Picture element structure and manufacturing method thereof - Google Patents
Picture element structure and manufacturing method thereof Download PDFInfo
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- CN100399168C CN100399168C CNB2003101215017A CN200310121501A CN100399168C CN 100399168 C CN100399168 C CN 100399168C CN B2003101215017 A CNB2003101215017 A CN B2003101215017A CN 200310121501 A CN200310121501 A CN 200310121501A CN 100399168 C CN100399168 C CN 100399168C
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 76
- 238000000034 method Methods 0.000 claims abstract description 102
- 230000005684 electric field Effects 0.000 claims abstract description 53
- 239000003990 capacitor Substances 0.000 claims abstract description 50
- 238000003860 storage Methods 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims description 82
- 239000004020 conductor Substances 0.000 claims description 51
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 39
- 229920005591 polysilicon Polymers 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 29
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 16
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 16
- 238000009826 distribution Methods 0.000 claims description 14
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 11
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Abstract
The present invention relates to a picture element structure and a manufacture method thereof. The picture element structure is suitable for being arranged on a base plate and is mainly composed of a scanning wire, a data wire, an active assembly, a capacitance electrode, a picture element electrode and an electric field shielding layer. The method for manufacturing the picture element structure mainly comprises the following procedures: first, forming the active assembly electrically connected with the scanning wire and the data wire, the scanning wire and the data wire on the base plate; besides, forming a capacitance electrode and an electric field shielding layer on the base plate; covering the data wire by the electric field shielding layer; finally, forming the picture element electrode on the base plate and covering the capacitance electrode which is electrically connected with the active assembly. The picture element electrode and the capacitance electrode are electrically coupled into a picture element storage capacitor. The electric field shielding layer can avoid a crosstalk phenomenon between the data wire and the picture element electrode.
Description
Technical field
The present invention relates to a kind of image element structure (Pixel structure) and manufacture method thereof, particularly relate to a kind of electric field shading layer (Electric field shielding layer) that between data wiring and pixel electrode (Pixel electrode), disposes, with image element structure and the manufacture method of avoiding interfering with each other between data wiring and pixel electrode thereof.
Background technology
Thin Film Transistor-LCD (Thin Film Transistor Liquid CrystalDisplay, TFT LCD) is made of plurality of groups of substrates of thin-film transistor, colorized optical filtering multiple substrate and liquid crystal layer.Wherein, plurality of groups of substrates of thin-film transistor is made of a plurality of image element structures of arranging with array.Each image element structure is made of a thin film transistor (TFT), a pixel electrode and a picture element storage capacitors.And above-mentioned thin film transistor (TFT) is to comprise gate (Gate), channel (Channel), drain (Drain) and source electrode (Source), and it is intended for the switch module of liquid crystal display.Be in when pixel electrode under the state of selection (promptly opening under the state of " ON "), signal will write on this picture element; (promptly close under the state of " OFF ") when pixel electrode is under the non-selected state, picture element storage capacitors wherein can be kept and drive the required current potential of liquid crystal.Therefore, the electric capacity of picture element storage capacitors promptly with the demonstration usefulness height correlation of LCD.
Picture element storage capacitors in the existing known image element structure is normally utilized the first metal layer (Metal 1) in the image element structure, second metal level (Metal 2), dielectric layer between first and second metal level (Dielectric layer) and pixel electrode constitute, no matter be that framework is in picture element storage capacitors on the gate (Cst on gate) or framework in the picture element storage capacitors (Cston common) on shared wiring, its normally with gate or shared wiring (being the first metal layer) as an electrode, and with second metal level that electrically connects each other and pixel electrode as another electrode.But, the existing known picture element storage capacitors of this kind is as capacitance electrode with lighttight metal, therefore the aperture opening ratio (Aperture ratio) of image element structure will reduce with the increasing of picture element storage capacitors, and then has caused brightness (Brightness) deficiency of LCD.
For solving the problem that above-mentioned picture element storage capacitors causes the aperture opening ratio decline of image element structure, another kind of existing known image element structure is also disclosed.Seeing also shown in Figure 1ly, is the diagrammatic cross-section of an existing known image element structure.Should existing known image element structure 100 be to be disposed on the substrate 110, this image element structure 100 be made of one scan distribution (not shown), a data wiring 130, a driving component 140 and a picture element storage capacitors 150.Wherein, scan wiring and data wiring 130 all are disposed on the substrate 110.Driving component 140 is to be disposed on the substrate 110 of scan wiring and data wiring 130 confluces, and is electrically connected to scan wiring and data wiring 130.Picture element storage capacitors 150 is made of a pixel electrode 152 and a transparent capacitance electrode 154.Wherein, pixel electrode 152 is to be electrically connected to driving component 140.
Picture element storage capacitors 150 is all transparent material owing to constitute the pixel electrode 152 and the transparent capacitance electrode 154 of picture element storage capacitors 150, so can not cause the aperture opening ratio of image element structure 100 to descend.But in high-resolution LCD, the electric capacity that only has the picture element storage capacitors 150 of two-layer capacitance electrode can be dwindled and the deficiency that seems along with area.If shorten the distance between pixel electrode 152 and the transparent capacitance electrode 154, to improve the electric capacity of picture element storage capacitors 150, then can increase the problem that pixel electrode 152 and data wiring 130 interfere with each other again, and then cause the image quality deterioration of LCD.
This shows that above-mentioned existing image element structure and manufacture method thereof still have defective, and demand urgently further being improved.In order to solve the defective of existing image element structure and manufacture method thereof, relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly, but does not see always that for a long time suitable design finished by development, and this obviously is the problem that the anxious desire of relevant dealer solves.
Because the defective that above-mentioned existing image element structure and manufacture method thereof exist, the inventor is based on being engaged in this type of product design manufacturing abundant for many years practical experience and professional knowledge, actively studied innovation, in the hope of founding a kind of new image element structure and manufacture method thereof, can improve general existing image element structure and manufacture method thereof, make it have more practicality.Through constantly research, design, and after studying sample and improvement repeatedly, create the present invention who has practical value finally.
Summary of the invention
The objective of the invention is to, overcome the defective that existing image element structure and manufacture method thereof exist, and provide a kind of new image element structure and manufacture method thereof, technical matters to be solved is to make it can improve the problem that interferes with each other between pixel electrode and data wiring, thereby be suitable for practicality more, and have the value on the industry.
Another object of the present invention is to, a kind of image element structure and manufacture method thereof are provided, technical matters to be solved is to make it be suitable for improving the aperture opening ratio of image element structure.
A further object of the present invention is, a kind of image element structure and manufacture method thereof are provided, and technical matters to be solved is to make it be suitable for simplifying fabrication steps.
An also purpose of the present invention is that a kind of image element structure and manufacture method thereof are provided, and technical matters to be solved is to make it be suitable for increasing the electric capacity of picture element storage capacitors.
The object of the invention to solve the technical problems is to adopt following technical scheme to realize.A kind of image element structure according to the present invention proposes is suitable for being configured on the substrate, and this image element structure comprises at least: the one scan distribution is disposed on this substrate; One data wiring is disposed on this substrate; One driving component, neighbor configuration are on this substrate of this scan wiring and this data wiring confluce, and this driving component is to be electrically connected to this scan wiring and this data wiring; One capacitance electrode is disposed on this substrate; One pixel electrode is disposed at this capacitance electrode top and is electrically connected to this driving component, and wherein this pixel electrode and this capacitance electrode are that electrical couplings is a picture element storage capacitors; And an electric field shading layer, being disposed between this data wiring and this pixel electrode, this electric field shading layer position is above this data wiring.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid image element structure and manufacture method thereof, wherein said driving component comprises low-temperature polysilicon film transistor.
Aforesaid image element structure and manufacture method thereof, it more comprises one source pole/drain conductor layer, wherein this driving component is to be electrically connected to this data wiring and this pixel electrode by this source/drain conductor layer.
Aforesaid image element structure and manufacture method thereof, it more comprises a conductor layer, wherein this driving component is to be electrically connected to this data wiring by this conductor layer, and this pixel electrode is directly to be electrically connected to this driving component.
Aforesaid image element structure and manufacture method thereof, it more comprises at least one transparent capacitance electrode, be disposed between this capacitance electrode and this pixel electrode, wherein this capacitance electrode, this transparent capacitance electrode and this pixel electrode are that electrical couplings is this picture element storage capacitors, and the material of this capacitance electrode is a transparent material.
Aforesaid image element structure and manufacture method thereof, wherein said driving component are directly to be electrically connected to this capacitance electrode or this transparent capacitance electrode.
Aforesaid image element structure and manufacture method thereof, wherein said driving component are to be electrically connected to this capacitance electrode or this transparent capacitance electrode by this pixel electrode.
Aforesaid image element structure and manufacture method thereof, the material of wherein said transparent capacitance electrode comprises indium tin oxide or indium-zinc oxide.
Aforesaid image element structure and manufacture method thereof, the material of wherein said conductor layer comprises indium tin oxide or indium-zinc oxide.
Aforesaid image element structure and manufacture method thereof, wherein said driving component comprises amorphous silicon film transistor.
Aforesaid image element structure and manufacture method thereof, wherein said driving component comprises at least: a gate is disposed on this substrate, and is electrically connected to this scan wiring; One channel is disposed at this gate top; And one source pole/drain, be disposed on this channel, and be electrically connected to this data wiring and this pixel electrode.
Aforesaid image element structure and manufacture method thereof, the material of wherein said capacitance electrode, electric field shading layer and pixel electrode comprises indium tin oxide or indium-zinc oxide.
The object of the invention to solve the technical problems also realizes by the following technical solutions.The manufacture method of a kind of image element structure that proposes according to the present invention, it comprises at least: form a driving component, one scan distribution and a data wiring on a substrate, and this driving component is to be electrically connected to this scan wiring and this data wiring; On this substrate, form a capacitance electrode; Form an electric field shading layer above this substrate, cover this data wiring and this driving component of part, this electric field shading layer and capacitance electrode are to be formed by the same material layer pattern; And on this substrate, form a pixel electrode, and cover this capacitance electrode and be electrically connected to this driving component, wherein this pixel electrode and this capacitance electrode are that electrical couplings is a picture element storage capacitors.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
The manufacture method of aforesaid image element structure, wherein said driving component comprises low-temperature polysilicon film transistor.
The manufacture method of aforesaid image element structure, wherein when forming this data wiring, more be included in this driving component top and form one source pole/drain conductor layer, wherein this driving component is to be electrically connected to this data wiring and this pixel electrode by this source/drain conductor layer.
The manufacture method of aforesaid image element structure, wherein after forming this data wiring, more be included in this driving component top and form a conductor layer, this driving component is to be electrically connected to this data wiring by this conductor layer, and this pixel electrode is directly to be electrically connected to this driving component.
The manufacture method of aforesaid image element structure, wherein after forming this capacitance electrode with form before this pixel electrode, more be included in this capacitance electrode top and form at least one transparent capacitance electrode.
The manufacture method of aforesaid image element structure, one of them is to be formed by the same material layer pattern with this electric field shading layer for wherein said capacitance electrode and this transparent capacitance electrode.
The manufacture method of aforesaid image element structure, wherein said conductor layer and this pixel electrode are formed by the same material layer patternization.
The manufacture method of aforesaid image element structure, the method that wherein forms this driving component comprises at least: form a polysilicon layer on this substrate; On this substrate, form a gate dielectric layer, cover this polysilicon layer; Form a gate on this gate dielectric layer, this gate is to be positioned at this polysilicon layer top; And in this polysilicon layer of these gate both sides, form one source pole/drain doped region.
The manufacture method of aforesaid image element structure, the method that wherein forms this source/drain doped region comprises with this gate serving as that the cover curtain carries out a dopping process, makes the both sides of this polysilicon layer become one source pole/drain doped region.
The manufacture method of aforesaid image element structure, wherein said driving component comprises amorphous silicon film transistor.
The manufacture method of aforesaid image element structure, the method that wherein forms this driving component comprises at least: form a gate on this substrate, be electrically connected to this scan wiring; On this substrate, form a gate dielectric layer, and cover this gate; Form a channel on this gate dielectric layer, this channel is to be positioned at this gate top; And on this channel, form one source pole/drain.
The manufacture method of aforesaid image element structure, the material of wherein said capacitance electrode, electric field shading layer and pixel electrode comprises indium tin oxide or indium-zinc oxide.
The present invention compared with prior art has tangible advantage and beneficial effect.By above technical scheme as can be known, in order to reach aforementioned goal of the invention, major technique of the present invention thes contents are as follows:
The present invention proposes a kind of image element structure, is suitable for being configured on the substrate.This image element structure is made of one scan distribution, a data wiring, a driving component, a capacitance electrode, a pixel electrode and an electric field shading layer.Wherein, this scan wiring and data wiring are to be disposed on the substrate.Driving component be neighbor configuration on the substrate of scan wiring and data wiring confluce, and driving component is to be electrically connected to scan wiring and data wiring.Capacitance electrode is to be disposed on the substrate.Pixel electrode is to be disposed at the capacitance electrode top, and pixel electrode is to be electrically connected to driving component.Pixel electrode and capacitance electrode are that electrical couplings is a picture element storage capacitors.Electric field shading layer is to be disposed between data wiring and the pixel electrode.
In addition, driving component for example is low temperature polycrystalline silicon (Low TemperaturePolysilicon, LTPS) thin film transistor (TFT).Simultaneously, image element structure for example more comprises one source pole/drain conductor layer.Wherein, driving component for example is to be electrically connected to data wiring and pixel electrode by the source/drain conductor layer.Perhaps, but image element structure also more comprises a conductor layer.Wherein, driving component for example is to be electrically connected to data wiring by conductor layer, and pixel electrode for example is directly to be electrically connected to driving component.The material of conductor layer for example be indium tin oxide (Indium TinOxide, ITO) or indium-zinc oxide (Indium Zinc Oxide, IZO).
In addition, also amorphous silicon film transistor of driving component.Simultaneously, driving component is made of a gate, a channel and one source pole/drain.Wherein, gate for example is to be disposed on the substrate, and is electrically connected to scan wiring.Channel for example is to be disposed at the gate top.Source/drain for example is to be disposed on the channel, and is electrically connected to data wiring and pixel electrode.
Moreover image element structure for example more comprises at least one transparent capacitance electrode, is disposed between capacitance electrode and the pixel electrode.Wherein, capacitance electrode, transparent capacitance electrode and pixel electrode are that electrical couplings is aforesaid picture element storage capacitors, and the material of capacitance electrode is a transparent material.Capacitance electrode or transparent capacitance electrode are directly to be electrically connected to driving component, also or be electrically connected to pixel electrode, are electrically connected to driving component by pixel electrode again.The material of transparent capacitance electrode for example is indium tin oxide or indium-zinc oxide.
In the image element structure of present embodiment, the material of capacitance electrode, electric field shading layer and pixel electrode for example is indium tin oxide or indium-zinc oxide.
Based on above-mentioned purpose, the present invention also proposes a kind of manufacture method of image element structure.The manufacture method of this image element structure, it mainly is to form a driving component, one scan distribution and a data wiring on a substrate earlier, and driving component is to be electrically connected to scan wiring and data wiring.And, on substrate, form a capacitance electrode.In addition, above substrate, form an electric field shading layer, cover data distribution.At last, on substrate, form a pixel electrode, cover capacitance electrode and be electrically connected to driving component.Wherein, pixel electrode and capacitance electrode are that electrical couplings is a picture element storage capacitors.
In addition, electric field shading layer and capacitance electrode are formed by the same material layer patternization.
In addition, driving component for example is a low-temperature polysilicon film transistor.Putting before this, for example when forming data wiring, more be included in the driving component top and form one source pole/drain conductor layer.Wherein, driving component for example is to be electrically connected to data wiring and pixel electrode by the source/drain conductor layer.Perhaps, for example after forming data wiring, also form a conductor layer in the driving component top.Wherein, driving component for example is to be electrically connected to data wiring by conductor layer, and pixel electrode for example is directly to be electrically connected to driving component.Conductor layer and pixel electrode are formed by the same material layer patternization.The method that forms driving component for example is at first to form a polysilicon layer on substrate.Then, on substrate, form a gate dielectric layer, cover polysilicon layer.Afterwards, form a gate on gate dielectric layer, gate is to be positioned at the polysilicon layer top.At last, in the polysilicon layer of gate both sides, form one source pole/drain doped region.
Wherein, the method that forms the source/drain doped region for example is to be that the cover curtain carries out a dopping process with the gate, makes the both sides of polysilicon layer become one source pole/drain doped region.
Moreover driving component is amorphous silicon film transistor also.Putting before this, the method that forms driving component for example is at first to form a gate on substrate, and is electrically connected to scan wiring.Afterwards, on substrate, form a gate dielectric layer, and cover gate.Then, form a channel on gate dielectric layer, channel is to be positioned at the gate top.At last, on channel, form one source pole/drain.
In addition, after forming capacitance electrode with form before the pixel electrode, for example more be included in the capacitance electrode top and form at least one transparent capacitance electrode.Wherein, electric field shading layer is for example formed by a material layer pattern simultaneously with capacitance electrode or transparent capacitance electrode.
In the manufacture method of the image element structure of present embodiment, the material of capacitance electrode, electric field shading layer and pixel electrode for example is indium tin oxide or indium-zinc oxide.
Via as can be known above-mentioned, the invention relates to a kind of image element structure and manufacture method thereof, this image element structure is suitable for being configured on the substrate.This image element structure is made of one scan distribution, a data wiring, a driving component, electric capacity electricity pixel electrode and an electric field shading layer.The manufacture method of this image element structure, it mainly is to form driving component, scan wiring and data wiring on substrate earlier, this driving component is electrically connected to scan wiring and data wiring.In addition, on substrate, form capacitance electrode and electric field shading layer, this electric field shading layer cover data distribution.At last, on substrate, form pixel electrode, cover capacitance electrode and be electrically connected to driving component.Wherein, pixel electrode and capacitance electrode are that electrical couplings is a picture element storage capacitors.Electric field shading layer can be avoided crosstalk phenomenon between data wiring and the pixel electrode.
By technique scheme, image element structure of the present invention and manufacture method thereof have following advantage at least:
(1), can not interfere with each other between pixel electrode and data wiring.
(2), can simplify fabrication steps.
(3), the picture element storage capacitors of transparent material can significantly promote the aperture opening ratio of image element structure.
(4), the picture element storage capacitors of sandwich construction has splendid electric capacity.
(5), be fit to be applied in the high-resolution LCD.
In sum, the image element structure of special construction of the present invention and manufacture method thereof, have above-mentioned many advantages and practical value, and in like product and manufacture method, do not see have similar structural design and method to publish or use and really genus innovation, no matter it all has bigger improvement on product structure, manufacture method or function, have large improvement technically, and produced handy and practical effect, thereby be suitable for practicality more, and have the extensive value of industry, really be a new and innovative, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of instructions, below with preferred embodiment of the present invention and conjunction with figs. describe in detail as after.
Description of drawings
Fig. 1 is the diagrammatic cross-section of an existing known image element structure.
Fig. 2 A～Fig. 2 E is the flow process and the section of structure of manufacture method of the image element structure of the present invention's first preferred embodiment.
Fig. 3 A～Fig. 3 E is the flow process and the section of structure of manufacture method of the image element structure of the present invention's second preferred embodiment.
Fig. 4 is the diagrammatic cross-section of the image element structure of the present invention's the 3rd preferred embodiment.
Fig. 5 is the diagrammatic cross-section of the image element structure of the present invention's the 4th preferred embodiment.
Fig. 6 is the diagrammatic cross-section of the image element structure of the present invention's the 5th preferred embodiment.
100: image element structure 110: substrate
130: data wiring 140: driving component
150: picture element storage capacitors 152: pixel electrode
154: transparent capacitance electrode 200,300,400: image element structure
500,600: image element structure 210,310,410: substrate
220,320: driving component 420,520,620: driving component
222,322: polysilicon layer 224,324: gate dielectric layer
226,326,426: gate 228,328: source/drain doped region
428: source/drain doped region 230a, 330a: first protective seam
230b, 330b: the second protective seam 240a, 340a, 540a: capacitance electrode
242,342: dielectric layer 245,345,445: electric field shading layer
545,645: electric field shading layer 250,350: data wiring
450,550,650: data wiring 260: the source/drain conductor layer
270,370: pixel electrode 470,570,670: pixel electrode
280,380,580: picture element storage capacitors 372,672: conductor layer
424: channel 428: source/drain
540b: transparent capacitance electrode O1: first contact window
O2: the second contact window O3: contact window
Embodiment
Below in conjunction with accompanying drawing and preferred embodiment, to image element structure and its concrete structure of manufacture method, manufacture method, step, feature and the effect thereof that foundation the present invention proposes, describe in detail as after.
[first embodiment]
Seeing also shown in Fig. 2 A～Fig. 2 F, is that the flow process of manufacture method of the image element structure of the present invention's first preferred embodiment is a section of structure.Consult Fig. 2 A figure at first clearly simultaneously with shown in Fig. 2 B, on a substrate 210, form a driving component 220, one scan distribution (not shown) and a data wiring 250.Wherein, driving component 220 for example is a low-temperature polysilicon film transistor.Forming the method for driving component 220, for example is at first to form a polysilicon layer 222 on substrate 210.Before forming polysilicon layer 222, for example more comprise forming a cushion (not shown) on substrate 210, be subjected to the ionic soil in the substrate 210 to prevent polysilicon layer 222.Polysilicon layer 222 for example is to be formed through tempering (Anneal) by amorphous silicon layer.Then, for example optionally on substrate 210, form a gate dielectric layer 224, cover polysilicon layer 222.Afterwards, for example form a gate 226 on gate dielectric layer 224, gate 226 is to be positioned at polysilicon layer 222 tops.At last, serve as that the cover curtain carries out a dopping process for example, so that the both sides of polysilicon layer 222 become one source pole/drain doped region 228 with gate 226.In addition, the gate 226 of driving component 220 is to electrically connect with scan wiring.
Please then consult shown in Fig. 2 C, for example carry out one light shield processing procedure on the source/drain doped region 228 of driving component 220, to form a plurality of first contact window O1.Afterwards, on substrate 210 with same metal layer pattern formation one data wiring 250 and one source pole/drain conductor layer 260.Wherein, data wiring 250 is to electrically connect with source/drain conductor layer 260, and source/drain conductor layer 260 is to fill up the first contact window O1 to be electrically connected to driving component 220.In addition, before forming the first contact window O1, for example more be included in and form one first protective seam 230a on the substrate 210, cover driving component 220.
Please then consult shown in Fig. 2 D, on substrate 210, form a capacitance electrode 240a and an electric field shading layer 245.Wherein, capacitance electrode 240a and electric field shading layer 245 are formed by the same material layer patternization, and electric field shading layer 245 for example covers partly driving component 220.Then, for example on substrate 210, form a dielectric layer 242, cover capacitance electrode 240a.Afterwards, for example carry out another road light shield processing procedure on source/drain conductor layer 260, to form one second contact window O2.In addition, before forming capacitance electrode 240a, for example more be included in and form one second protective seam 230b, cover data distribution 250 and source/drain conductor layer 260 on the substrate 210.
See also at last shown in Fig. 2 E, on the dielectric layer above the capacitance electrode 240a 242, form a pixel electrode 270.And pixel electrode 270 is to fill up the second contact window O2 being electrically connected to source/drain conductor layer 260, and is electrically connected to driving component 220 by source/drain conductor layer 260.Wherein, pixel electrode 270 is that electrical couplings is a picture element storage capacitors 280 with capacitance electrode 240a.In addition, pixel electrode 270 for example more extends to driving component 220 tops, so the effect that also has storage capacitors of the electric field shading layer 245 of pixel electrode 270 and driving component 220 tops.
Below will elaborate at the image element structure of the present invention's first preferred embodiment.See also shown in Fig. 2 E, this image element structure 200 is to be suitable for being configured on the substrate 210.This image element structure 200, it is made of scan wiring (not shown), data wiring 250, driving component 220, capacitance electrode 240a, pixel electrode 270 and electric field shading layer 245.Wherein, scan wiring and data wiring 250 are to be disposed on the substrate 210.Driving component 220 be neighbor configuration on the substrate 210 of scan wiring and data wiring 250 confluces, and driving component 220 is to be electrically connected to scan wiring and data wiring 250.Capacitance electrode 240a is disposed on the substrate 210.Pixel electrode 270 is to be disposed on the capacitance electrode 240a, and pixel electrode 270 is to be electrically connected to driving component 220.Pixel electrode 270 is that electrical couplings is a picture element storage capacitors 280 with capacitance electrode 240a.It should be noted that between data wiring 250 and the pixel electrode 270 and dispose electric field shading layer 245, be suitable for avoiding crosstalk phenomenon between data wiring 250 and the pixel electrode 270.In addition, pixel electrode 270 for example more extends to driving component 220 tops, so the effect that also has storage capacitors of the electric field shading layer 245 of pixel electrode 270 and driving component 220 tops.
In addition, image element structure 200 for example more comprises source/drain conductor layer 260.Wherein, driving component 220 for example is to be electrically connected to data wiring 250 and pixel electrode 270 by source/drain conductor layer 260.Electric field shading layer 245, pixel electrode 270 for example are indium tin oxide or indium-zinc oxide with the material of capacitance electrode 240a.
[second embodiment]
Seeing also shown in Fig. 3 A～Fig. 3 E, is that the flow process of manufacture method of the image element structure of the present invention's second preferred embodiment is a section of structure.At first please consult Fig. 3 A figure jointly with shown in Fig. 3 B, on a substrate 310, form a driving component 320, one scan distribution (not shown) and a data wiring 350.Wherein, driving component 320 for example is a low-temperature polysilicon film transistor.Forming the method for driving component 320, for example is at first to form a polysilicon layer 322 on substrate 310.Before forming polysilicon layer 322, for example more comprise forming a cushion (not shown) on substrate 310, be subjected to the ionic soil in the substrate 310 to prevent polysilicon layer 322.Polysilicon layer 322 for example is to be formed through tempering (Anneal) by amorphous silicon layer.Then, for example on substrate 310, form a gate dielectric layer 324, cover polysilicon layer 322.Afterwards, for example form a gate 326 on gate dielectric layer 324, gate 326 is the tops that are positioned at polysilicon layer 322.At last, serve as that the cover curtain carries out a dopping process for example, so that the both sides of polysilicon layer 322 become one source pole/drain doped region 328 with gate 326.In addition, the gate 326 of driving component 320 is to electrically connect with scan wiring.In addition, for example more be included in and form one first protective seam 330a on the substrate 310, cover driving component 320.
Please then consult shown in Fig. 3 C, on substrate 310, form a data wiring 350.
Please then consult shown in Fig. 3 D, on substrate 310, form a capacitance electrode 340a and an electric field shading layer 345.In addition, before forming capacitance electrode 340a and electric field shading layer 345, for example more be included in and form one second protective seam 330b, cover data distribution 350 on the substrate 310.
See also at last shown in Fig. 3 E, for example on substrate 310, form a dielectric layer 342, cover capacitance electrode 340a and electric field shading layer 345.Then, for example carry out the light shield processing procedure one, on source/drain doped region 328 and data wiring 350, to form a plurality of contact window O3.Afterwards, with a transparent material layer patterning,, and on the dielectric layer 342 above source/drain doped region 328 and the data wiring 350, form a conductor layer 372 with formation one pixel electrode 370 on the dielectric layer above the capacitance electrode 340a 342.And, pixel electrode 370 is to fill up contact window O3 with conductor layer 372, so that pixel electrode 370 directly is electrically connected to 320 source/drain doped regions 328 of driving component, 372 of conductor layers are electrically connected to 320 source/drain doped regions 328 of data wiring and 350 driving components.Wherein, pixel electrode 370 is that electrical couplings is a picture element storage capacitors 380 with capacitance electrode 340a.
Below will elaborate at the image element structure of the present invention's second preferred embodiment.See also shown in Fig. 3 E, image element structure 300 is to be suitable for being configured on the substrate 310.This image element structure 300 is made of scan wiring (figure does not show), data wiring 350, driving component 320, capacitance electrode 340a, pixel electrode 370 and electric field shading layer 345.Wherein, scan wiring and data wiring 350 are to be disposed on the substrate 310.Driving component 320 be neighbor configuration on the substrate 310 of scan wiring and data wiring 350 confluces, and driving component 320 is to be electrically connected to scan wiring and data wiring 350.Capacitance electrode 340a is disposed on the substrate 310.Pixel electrode 370 is to be disposed on the capacitance electrode 340a, and pixel electrode 370 is to be electrically connected to driving component 320.Pixel electrode 370 is that electrical couplings is a picture element storage capacitors 380 with capacitance electrode 340a.It should be noted that between data wiring 350 and the pixel electrode 370 and dispose electric field shading layer 345, be suitable for avoiding crosstalk phenomenon between data wiring 350 and the pixel electrode 370.
In addition, image element structure 300 for example more comprises conductor layer 372.Wherein, driving component 320 for example is to be electrically connected to data wiring 350 by conductor layer 372, and pixel electrode 370 for example is directly to be electrically connected to driving component 320.Electric field shading layer 345, pixel electrode 370, conductor layer 372 for example are indium tin oxide or indium-zinc oxide with the material of capacitance electrode 340a.
[the 3rd embodiment]
Seeing also shown in Figure 4ly, is the diagrammatic cross-section of the image element structure of the present invention's the 3rd preferred embodiment.In the image element structure 400 of the present invention's the 3rd preferred embodiment, with above-mentioned preferred embodiment difference mainly is to be driving component 420 with the amorphous silicon film transistor, it is characterized in that disposing electric field shading layer 445 between data wiring 450 and the pixel electrode 470, therefore do not repeat them here with above-mentioned preferred embodiment something in common.The driving component 420 of image element structure 400 for example is the amorphous silicon membrane transistor.Driving component 420 is made of a gate 426, a channel 424 and one source pole/drain 428.Wherein, gate 426 for example is to be disposed on the substrate 410, and is electrically connected to the scan wiring (not shown).Channel 424 for example is to be disposed at gate 426 tops.Source/drain 428 for example is to be disposed on the channel 424, and is electrically connected to data wiring 450 and pixel electrode 470.
[the 4th embodiment]
Seeing also shown in Figure 5ly, is the diagrammatic cross-section of the image element structure of the present invention's the 4th preferred embodiment.In the image element structure 500 of the present invention's the 4th preferred embodiment, with above-mentioned each preferred embodiment difference mainly be that picture element storage capacitors 580 more increases at least one transparent capacitance electrode 540b, but still keep the feature that disposes electric field shading layer 545 between data wiring 550 and the pixel electrode 570, therefore do not repeat them here with above-mentioned preferred embodiment something in common.Image element structure 500 for example more comprises at least one transparent capacitance electrode 540b, is disposed between capacitance electrode 540a and the pixel electrode 570.Wherein, capacitance electrode 540a, transparent capacitance electrode 540b and pixel electrode 570 are that electrical couplings is a picture element storage capacitors 580, and the material of capacitance electrode 540a is a transparent material.The material of transparent capacitance electrode 540b for example is indium tin oxide or indium-zinc oxide.
In addition, capacitance electrode 540a directly is electrically connected to driving component 520, also or be electrically connected to pixel electrode 570, is electrically connected to driving component 520 by pixel electrode 570 again.Therefore, in picture element storage capacitors 580, capacitance electrode 540a and pixel electrode 570 for example are same current potentials, and transparent capacitance electrode 240b is another current potential.This kind design can reduce the required additional power source of picture element storage capacitors 280.Certainly, if when having a plurality of transparent capacitance electrode 540b, directly or via the capacitance electrode that pixel electrode 570 is electrically connected to driving component 520 also can be transparent capacitance electrode 540b, as long as adjacent capacitance electrode is kept different potentials.
[the 5th embodiment]
Seeing also shown in Figure 6ly, is the diagrammatic cross-section of the image element structure of the present invention's the 5th preferred embodiment.In the image element structure 600 of the present invention's the 5th preferred embodiment, with the 4th preferred embodiment difference mainly is that driving component 620 is different to some extent with the electric connection of pixel electrode 670 and data wiring 650, but still keep the feature that disposes electric field shading layer 645 between data wiring 650 and the pixel electrode 670, therefore do not repeat them here with the 4th preferred embodiment something in common.The pixel electrode 670 of image element structure 600 for example is directly to be electrically connected to driving component 620, and data wiring 650 for example is to be electrically connected to driving component 620 by conductor layer 672.In addition, conductor layer 672 is formed by same transparent material layer patterning with pixel electrode 670.
It should be noted that, in the present invention the 4th and the 5th preferred embodiment, all with low-temperature polysilicon film transistor as driving component, anyly be familiar with this skill person with reference to knowing after the content of above-mentioned exposure, can also amorphous silicon film transistor as driving component, still possess every advantage of the present invention the 4th and the 5th preferred embodiment simultaneously.
From the above, in the image element structure and manufacture method thereof of each preferred embodiment of the present invention, principal character is for disposing electric field shading layer between data wiring and the pixel electrode.Therefore, image element structure of the present invention and manufacture method thereof can effectively be improved data wiring and pixel electrode interferes with each other the problem of (that is cross-talk phenomenon).Especially shorten distance between pixel electrode and the transparent capacitance electrode in desire, effect is more showing when improving the electric capacity of picture element storage capacitors.Meet the image element structure of above-mentioned feature and the scope that manufacture method all should belong to institute of the present invention desire protection thereof.In addition, have the image element structure and the manufacture method thereof of above-mentioned feature, more can in image element structure, dispose a picture element storage capacitors, and the picture element storage capacitors is to be formed by pixel electrode and a plurality of transparent capacitance electrode electrical couplings.Pixel electrode also can directly be electrically connected to driving component, and data wiring then is electrically connected to driving component by a conductor layer.
In addition, the picture element storage capacitors is not limited to that preferred embodiment is described only to be formed by a pixel electrode and two transparent capacitance electrode electrical couplings, more can increase the quantity of transparent capacitance electrode, so that the picture element storage capacitors obtains higher electric capacity in equal area.And general's part transparent capacitance electrode is via pixel electrode or directly be electrically connected to driving component, can reduce the power circuit number of the required use of picture element storage capacitors, and have splendid electric capacity.In addition, in second preferred embodiment, pixel electrode is directly to be electrically connected to driving component, and does not need to be electrically connected to driving component by the source/drain conductor layer, this design can reduce the light shield processing procedure one than first preferred embodiment, and then can shorten processing procedure time and cost.
In sum, image element structure of the present invention and manufacture method thereof have following advantage:
(1), electric field shading layer can effectively be avoided interfering with each other between pixel electrode and data wiring.
(2), electric field shading layer is that one of capacitance electrode with the picture element storage capacitors forms simultaneously, can not increase fabrication steps.
(3), each layer capacitance electrode of picture element storage capacitors is all transparent material, can significantly promote the aperture opening ratio of image element structure.
(4), the picture element storage capacitors of sandwich construction has splendid electric capacity.
(5), in equal area, can obtain higher electric capacity, therefore go in the high-resolution LCD.
(6), only need to form contact window, can satisfy driving component and be electrically connected to the required of pixel electrode and data wiring, and can reduce processing procedure time and cost with one light shield processing procedure.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the structure that can utilize above-mentioned announcement and manufacture method are made a little change or be modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solution of the present invention, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (24)
1. an image element structure is suitable for being configured on the substrate, it is characterized in that this image element structure comprises at least:
The one scan distribution is disposed on this substrate;
One data wiring is disposed on this substrate;
One driving component, neighbor configuration are on this substrate of this scan wiring and this data wiring confluce, and this driving component is to be electrically connected to this scan wiring and this data wiring;
One capacitance electrode is disposed on this substrate;
One pixel electrode is disposed at this capacitance electrode top and is electrically connected to this driving component, and wherein this pixel electrode and this capacitance electrode are that electrical couplings is a picture element storage capacitors; And
One electric field shading layer is disposed between this data wiring and this pixel electrode, and this electric field shading layer position is above this data wiring.
2. image element structure according to claim 1 is characterized in that wherein said driving component comprises low-temperature polysilicon film transistor.
3. image element structure according to claim 2 is characterized in that it more comprises one source pole/drain conductor layer, and wherein this driving component is to be electrically connected to this data wiring and this pixel electrode by this source/drain conductor layer.
4. image element structure according to claim 2 is characterized in that it more comprises a conductor layer, and wherein this driving component is to be electrically connected to this data wiring by this conductor layer, and this pixel electrode is directly to be electrically connected to this driving component.
5. according to claim 1 or 4 described image element structures, it is characterized in that it more comprises at least one transparent capacitance electrode, be disposed between this capacitance electrode and this pixel electrode, wherein this capacitance electrode, this transparent capacitance electrode and this pixel electrode are that electrical couplings is this picture element storage capacitors, and the material of this capacitance electrode is a transparent material.
6. image element structure according to claim 5 is characterized in that wherein said driving component is directly to be electrically connected to this capacitance electrode or this transparent capacitance electrode.
7. image element structure according to claim 5 is characterized in that wherein said driving component is to be electrically connected to this capacitance electrode or this transparent capacitance electrode by this pixel electrode.
8. image element structure according to claim 5 is characterized in that the material of wherein said transparent capacitance electrode comprises indium tin oxide or indium-zinc oxide.
9. image element structure according to claim 4 is characterized in that the material of wherein said conductor layer comprises indium tin oxide or indium-zinc oxide.
10. image element structure according to claim 1 is characterized in that wherein said driving component comprises amorphous silicon film transistor.
11. image element structure according to claim 10 is characterized in that wherein said driving component comprises at least:
One gate is disposed on this substrate, and is electrically connected to this scan wiring;
One channel is disposed at this gate top; And
One source pole/drain is disposed on this channel, and is electrically connected to this data wiring and this pixel electrode.
12. image element structure according to claim 1 is characterized in that the material of wherein said capacitance electrode, electric field shading layer and pixel electrode comprises indium tin oxide or indium-zinc oxide.
13. the manufacture method of an image element structure is characterized in that it comprises at least:
On a substrate, form a driving component, one scan distribution and a data wiring, and this driving component is to be electrically connected to this scan wiring and this data wiring;
On this substrate, form a capacitance electrode;
Form an electric field shading layer above this substrate, cover this data wiring and this driving component of part, this electric field shading layer and capacitance electrode are to be formed by the same material layer pattern; And
Form a pixel electrode on this substrate, cover this capacitance electrode and be electrically connected to this driving component, wherein this pixel electrode and this capacitance electrode are that electrical couplings is a picture element storage capacitors.
14. the manufacture method of image element structure according to claim 13 is characterized in that wherein said driving component comprises low-temperature polysilicon film transistor.
15. the manufacture method of image element structure according to claim 14, it is characterized in that wherein when forming this data wiring, more be included in this driving component top and form one source pole/drain conductor layer, wherein this driving component is to be electrically connected to this data wiring and this pixel electrode by this source/drain conductor layer.
16. the manufacture method of image element structure according to claim 14, it is characterized in that wherein after forming this data wiring, more be included in this driving component top and form a conductor layer, this driving component is to be electrically connected to this data wiring by this conductor layer, and this pixel electrode is directly to be electrically connected to this driving component.
17. according to the manufacture method of claim 13 or 16 described image element structures, it is characterized in that wherein after forming this capacitance electrode and form before this pixel electrode, more be included in this capacitance electrode top and form at least one transparent capacitance electrode.
18. the manufacture method of image element structure according to claim 17, one of them is to be formed by the same material layer pattern with this electric field shading layer to it is characterized in that wherein said capacitance electrode and this transparent capacitance electrode.
19. the manufacture method of image element structure according to claim 16 is characterized in that wherein said conductor layer and this pixel electrode are formed by the same material layer patternization.
20. the manufacture method of image element structure according to claim 14 is characterized in that the method that wherein forms this driving component comprises at least:
On this substrate, form a polysilicon layer;
On this substrate, form a gate dielectric layer, cover this polysilicon layer;
Form a gate on this gate dielectric layer, this gate is to be positioned at this polysilicon layer top; And
In this polysilicon layer of these gate both sides, form one source pole/drain doped region.
21. the manufacture method of image element structure according to claim 20 is characterized in that the method that wherein forms this source/drain doped region comprises with this gate serving as that the cover curtain carries out a dopping process, makes the both sides of this polysilicon layer become one source pole/drain doped region.
22. the manufacture method of image element structure according to claim 13 is characterized in that wherein said driving component comprises amorphous silicon film transistor.
23. the manufacture method of image element structure according to claim 22 is characterized in that the method that wherein forms this driving component comprises at least:
On this substrate, form a gate, be electrically connected to this scan wiring;
On this substrate, form a gate dielectric layer, and cover this gate;
Form a channel on this gate dielectric layer, this channel is to be positioned at this gate top; And
On this channel, form one source pole/drain.
24. the manufacture method of image element structure according to claim 13 is characterized in that the material of wherein said capacitance electrode, electric field shading layer and pixel electrode comprises indium tin oxide or indium-zinc oxide.
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| CNB2003101215017A CN100399168C (en) | 2003-12-16 | 2003-12-16 | Picture element structure and manufacturing method thereof |
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| CNB2003101215017A CN100399168C (en) | 2003-12-16 | 2003-12-16 | Picture element structure and manufacturing method thereof |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06308533A (en) * | 1993-04-22 | 1994-11-04 | Nec Corp | Liquid crystal display device |
| JP2000284304A (en) * | 1999-03-30 | 2000-10-13 | Sony Corp | Liquid crystal display device |
| JP2001242482A (en) * | 2000-02-25 | 2001-09-07 | Toshiba Corp | Active matrix liquid crystal display device |
| US6421101B1 (en) * | 1996-09-04 | 2002-07-16 | Semiconductor Energy Laboratory Co., Ltd. | Display device including a transparent electrode pattern covering and extending along gate & source lines |
| US20030122497A1 (en) * | 2001-12-29 | 2003-07-03 | Lg.Philips Lcd Co., Ltd. | Active matrix organic electroluminescence display device and method of fabricating the same |
-
2003
- 2003-12-16 CN CNB2003101215017A patent/CN100399168C/en not_active Expired - Lifetime
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06308533A (en) * | 1993-04-22 | 1994-11-04 | Nec Corp | Liquid crystal display device |
| US6421101B1 (en) * | 1996-09-04 | 2002-07-16 | Semiconductor Energy Laboratory Co., Ltd. | Display device including a transparent electrode pattern covering and extending along gate & source lines |
| JP2000284304A (en) * | 1999-03-30 | 2000-10-13 | Sony Corp | Liquid crystal display device |
| JP2001242482A (en) * | 2000-02-25 | 2001-09-07 | Toshiba Corp | Active matrix liquid crystal display device |
| US20030122497A1 (en) * | 2001-12-29 | 2003-07-03 | Lg.Philips Lcd Co., Ltd. | Active matrix organic electroluminescence display device and method of fabricating the same |
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