CN100407461C - Method for producing luminous element with high-illuminating effect - Google Patents
Method for producing luminous element with high-illuminating effect Download PDFInfo
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- CN100407461C CN100407461C CN2005101269393A CN200510126939A CN100407461C CN 100407461 C CN100407461 C CN 100407461C CN 2005101269393 A CN2005101269393 A CN 2005101269393A CN 200510126939 A CN200510126939 A CN 200510126939A CN 100407461 C CN100407461 C CN 100407461C
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Abstract
A method for preparing luminous element with high luminous efficiency includes utilizing a laser beam to shine a wafer containing semiconductor luminous element for cutting said wafer to be chip then applying wet-acidic etching means to remove off byproduct generated by laser-beam cutting.
Description
Technical field
The present invention relates to a kind of manufacture method of light-emitting component, particularly relate to a kind of manufacture method of high-luminous-efficiency light-emitting component.
Background technology
The development and application of nitride light-emitting element is quite extensive and have importance, and its application comprises identification light source, electronic product backlight, outdoor full color billboard, white-light illuminating, ultraviolet light and the application of high power capacity CD-ROM drive etc.
In the structure of nitride light-emitting element, sapphire (sapphire) and carborundum (SiC) are the main material of its substrate.In the technology of nitride light-emitting element, comprise with wafer also forming luminous lamination thereon as substrate, again this wafer is cut into the technology of chip.Traditional cutting method utilizes a diamond cutter as cutting tool, after real estate cuts in advance, carries out fracture process again.Therefore yet sapphire substrate and silicon carbide substrate all far above general III-V family substrate (for example silicon substrate or GaAs substrate), cut difficultly and consuming time on hardness and intensity, moreover the diamond cutter coefficient of losses is also very big, and cost is improved relatively.
The method that another kind of wafer cuts into chip is to utilize the high-energy-density of laser beam, with the bond cracking of atom in the substrate and atom, reaches the purpose of cutting and separating wafer.Yet in the technology of laser cutting, the localized hyperthermia that high-energy-density produced because of laser beam, pile up many accessory substances after making the cracking of substrate crystal bond on Cutting Road, this accessory substance can absorb the light that light-emitting component sends, and then reduces the light extraction efficiency of chip.Therefore after laser cutting, how effectively to remove accessory substance, to promote the light extraction efficiency of chip, for improving an important topic of light-emitting component performance.
United States Patent (USP) the 5th, 631 discloses a kind of method of the accessory substance that produced when removing the laser cutting silicon carbide substrate with dry-etching (dry etching) for No. 190.Cut when wearing element when laser, not only can destroy element characteristic, also the byproduct that can when element surface is piled up cutting, be produced to silicon carbide substrate.And when using dry-etching cleaning byproduct,, influence product performance except causing the dry-etching injury, and also easily cause fragmentation to produce, reduce the finished product rate.
United States Patent (USP) the 6th, 849 discloses a kind of wet etching that contains the etching solution of potassium hydroxide (KOH) in No. 524, to remove the accessory substance that produces behind the laser nicking sapphire substrate.This accessory substance comprises the fragment (debris) of institute's splash behind laser ablation (laser ablation) sapphire substrate and the aluminum oxide slag of fusion (slag) again.The method before laser cutting earlier the plating layer protective layer at cut surface to prevent the debris damage cut surface of splash; remove the accessory substance that produces behind the laser nicking sapphire substrate with the etching solution of potassium hydroxide again, but this kind removing technology can't effectively be removed the aluminum oxide slag of fusion again.
Summary of the invention
The invention provides the method for manufacturing luminescent device of a high-luminous-efficiency, its step comprises the wafer that cuts a tool light-emitting component with a laser beam, and be not less than under 200 ℃ the cleaning temperature in one, clean this wafer with an acid solution, produced and be deposited in the accessory substance of light-emitting component when cutting this wafer to remove laser beam.This light-emitting component as substrate, and forms a luminous lamination with this wafer on this substrate.Remove the accessory substance that laser beam causes with acid solution, the light that can avoid light-emitting component to produce is absorbed by accessory substance, therefore can significantly promote the brightness of light-emitting component. and, acid solution can be removed the accessory substance that is deposited on the light-emitting component fast, significantly reduce and remove the time that is spent, and the fragmentation problem that can avoid the conventional dry etching to be caused, to promote the rate of finished products of product.
Description of drawings
Figure 1A is a schematic diagram, shows the light-emitting component of the high-luminous-efficiency of making according to one embodiment of the present invention;
Figure 1B shows the sweep electron microscope figure of the light-emitting component of the high-luminous-efficiency that one embodiment of the present invention is made;
Fig. 1 C shows the sweep electron microscope figure of the light-emitting component of the high-luminous-efficiency that one embodiment of the present invention is made;
Fig. 2 A shows the sweep electron microscope figure of the light-emitting component of the high-luminous-efficiency that one embodiment of the present invention is made;
Fig. 2 B shows the sweep electron microscope figure of the light-emitting component of the high-luminous-efficiency that one embodiment of the present invention is made;
Fig. 2 C shows the sweep electron microscope figure of the light-emitting component of the high-luminous-efficiency that one embodiment of the present invention is made;
Fig. 3 is the graph of a relation of acid solution of the present invention at different temperatures and scavenging period;
Fig. 4 is a schematic diagram, shows the light-emitting component of the high-luminous-efficiency of making according to one embodiment of the present invention.
The simple symbol explanation
10 substrates
101 Cutting Roads
11 accessory substances
Accessory substance in 111 Cutting Roads
Accessory substance on 112 Cutting Roads
12 luminous laminations
13 first protective layers
20 substrates
201 Cutting Roads
21 accessory substances
Accessory substance in 211 Cutting Roads
Accessory substance on 212 Cutting Roads
22 luminous laminations
23 the 3rd protective layers
Embodiment
Please refer to Figure 1A-1C; manufacture method according to the light-emitting component 1 of the high-luminous-efficiency of one embodiment of the present invention; its step is included on first upper surface of substrate 10 of a tool one first upper surface and one first lower surface and forms a luminous lamination 12; wherein this luminous lamination comprises one second upper surface and one second lower surface; and this second lower surface is towards this substrate 10; be coated with one first protective layer 13 in luminous lamination second upper surface; cut this light-emitting component 1 from base lower surface with a laser beam; and this light-emitting component 1 with first protective layer 13 is inserted a period of time in the acid solution of a heated condition; by this hot acid solution, accessory substance is removed.The technology of laser beam cutting light-emitting component is with the laser beam of wavelength less than 365nm in the present embodiment, and first lower surface of substrate is cut, and produces Cutting Road 101.The accessory substance 11 that cutting is caused can be piled up in the Cutting Road 101 and around the Cutting Road at the substrate first lower surface place, comprise Cutting Road second accessory substance 112 on every side that is piled up in first interior accessory substance 111 of Cutting Road and the substrate first lower surface place.Please refer to the sweep electron microscope top view of light-emitting component 1 after the laser beam cutting that Figure 1B is depicted as the embodiment of the invention, around Cutting Road, pile up many accessory substances.Fig. 1 C is depicted as the sweep electron microscope end view of light-emitting component 1 after the laser beam cutting of the embodiment of the invention, piles up many accessory substances on A-A ' direction Cutting Road and in B-B ' the direction Cutting Road.Acid solution composition in the present embodiment then is phosphoric acid (H
3PO
4) and sulfuric acid (H
2SO
4) mixed solution, it is preferred that the operating temperature of this acid solution is higher than normal temperature.In addition, also can be coated with one second protective layer in substrate 10 first lower surfaces of light-emitting component in present embodiment, further protective substrate 10, avoid being injured by acid solution.
At phosphoric acid (H
3PO
4) and sulfuric acid (H
2SO
4) volume ratio of mixed solution is under 2: 1 conditions, to the acid solution of different temperatures, under different scavenging periods, to remove the experiment of accessory substance.Please refer to Fig. 2 A, in experiment I, the scanning electron end view behind clear Xian of Cutting Road process acid solution of light-emitting component 1.Light-emitting component 1, reaches the accessory substance of being piled up around the Cutting Road at the substrate first lower surface place 111 and 112 and still can't be eliminated after cleaning 10 minutes under 130 ℃ the temperature with acid solution in the Cutting Road 101.Please refer to Fig. 2 B, in experiment II, after cleaning 2 minutes under 240 ℃ the temperature, the accessory substance of piling up around the Cutting Road at the substrate first lower surface place 112 has been eliminated light-emitting component 1 with acid solution, and the accessory substance 111 in the Cutting Road 101 still can't be eliminated.Please refer to Fig. 2 C, in experiment III, after cleaning 1 minute under 330 ℃ the temperature, the accessory substance of piling up around the accessory substance 111 in the Cutting Road 101 and the Cutting Road at the substrate first lower surface place 112 is eliminated light-emitting component 1 fully with acid solution.
Above-mentioned experiment only is the experimental result of part, after too much group is tested, can obtain Fig. 3 by the result, and curve A is the operating condition lowest limit that removes accessory substance 112, and curve B is the operating condition lowest limit that removes accessory substance 111 and accessory substance 112.Learnt that by Fig. 3 the operating condition of cleaning procedure falls within Fig. 3 I district, just during the following opereating specification of curve A, the accessory substance after the laser cutting can't be removed.When the operating condition of cleaning procedure falls within Fig. 3 II district, just during the opereating specification between curve A and the curve B, with acid solution more than 200 ℃ and the cleaning temperature below 250 ℃ clean, accessory substance 112 can be removed.When the operating condition of cleaning procedure falls within Fig. 3 III district, just during the above opereating specification of curve B, clean at cleaning temperature more than or equal to 250 ℃ with acid solution, accessory substance 111 and 112 all can be removed.
The proportion of composing of this acid solution can change according to user's demand, if the user wishes to finish in the short period then adjustable high sulfuric acid (H
2SO
4) ratio, promote operating temperature, shorten scavenging period.
This acid solution after to laser cutting accessory substance and substrate between good selectivity is arranged, acid solution can be removed most accessory substance under the situation of not damaging substrate, avoid acid solution to destroy element.
Please refer to Fig. 4; manufacture method according to the light-emitting component 2 of the high-luminous-efficiency of second preferred embodiment of the invention; the 3rd upper surface that its step is included in the substrate 20 of a tool 1 the 3rd upper surface and one the 3rd lower surface forms a luminous lamination 22; wherein this luminous lamination comprises one the 4th upper surface and one the 4th lower surface; and the 4th lower surface is towards this substrate 20; be coated with one the 3rd protective layer 23 in luminous stack surface; the thickness of the 3rd protective layer 23 is about 1～4 μ m; with a laser beam the 4th upper surface of luminous lamination is cut this light-emitting component 2; and this light-emitting component 2 with the 3rd protective layer inserted in the acid solution clean, the accessory substance that is produced when removing laser beam cutting light-emitting component.The technology of laser beam cutting light-emitting component is cut less than the laser beam of 365nm the 3rd upper surface to substrate with wavelength in the present embodiment, produces Cutting Road 201.The byproduct 21 that cutting is caused can be piled up in the Cutting Road 201 and around the Cutting Road, comprise the 3rd accessory substance 211 and the Cutting Road fourth officer product 212 on every side that are piled up in the Cutting Road.Acid solution composition in the present embodiment is phosphoric acid (H
3PO
4) and sulfuric acid (H
2SO
4) mixed solution, it is preferred that the operating temperature of this acid solution is higher than normal temperature, the temperature of present embodiment is about about 320 ℃, scavenging period is 10-60 second.
In second embodiment, be coated with one the 4th protective layer in the 3rd lower surface of the substrate 20 of light-emitting component, further protective substrate 20, avoid being injured by acid solution.
In second embodiment, laser beam cuts the 3rd upper surface of substrate 20, produces Cutting Road 201, and this Cutting Road degree of depth can arrive substrate 20.
In the various embodiments described above, light-emitting component can also comprise a fracture process after cleaning, light-emitting component is separated into chip.
In the various embodiments described above, first protective layer 13, second protective layer, the 3rd protective layer 23 and the 4th protective layer comprise at least a material or other alternative material that is selected from gold (Au), platinum (Pt), titanium (Ti), silicon nitride (Si3N4), silica (SiO2), epoxy resin (Epoxy), photoresist (photoresist) the institute constituent material cohort.
In the various embodiments described above, substrate 10 or 20 comprise be selected from sapphire, SiC, GaN, AlN, ZnO, and MgO institute constituent material cohort at least a material or other alternative material.
Luminous lamination in above-mentioned each related embodiment comprises one first conductive type semiconductor layer, a luminescent layer and one second conductive type semiconductor layer.This first conductive type semiconductor layer can comprise be selected from AlGaInP, AlInP, GaInP, AlN, GaN, AlGaN, InGaN, and constituent material group of AlInGaN institute in a kind of material or its alternative material.Luminescent layer can comprise a kind of material or its alternative material that is selected from AlGaInP, AlInP, GaInP, GaN, InGaN and the constituent material group of AlInGaN institute.Second conductive type semiconductor layer can comprise a kind of material or its alternative material that is selected from AlGaInP, AlInP, GaInP, AlN, GaN, AlGaN, InGaN and the constituent material group of AlInGaN institute.
Though the present invention is illustrated in by each embodiment, so these embodiment are not in order to limit the scope of the invention.For various modifications and the change that the present invention did, neither spirit of the present invention and the scope of taking off.
Claims (12)
1. the manufacture method of a light-emitting component comprises:
Cut a light-emitting component with a laser beam, this light-emitting component comprises that one has the substrate of first lower surface and first upper surface, and be formed at a luminous lamination on this substrate first upper surface, this luminous lamination comprises one second lower surface and one second upper surface, and this second lower surface is towards this substrate; And
Be not less than under 200 ℃ the cleaning temperature in one, clean this light-emitting component with an acid solution, the accessory substance that is produced when removing laser beam cutting light-emitting component.
2. the manufacture method of light-emitting component as claimed in claim 1, wherein, this luminous lamination comprises:
One first semiconductor layer;
Be formed at the semiconductor luminescent layer on this first semiconductor layer; And
Be formed at one second semiconductor layer on this semiconductor light emitting layer.
3. the manufacture method of light-emitting component as claimed in claim 1 wherein, also is included on second upper surface of this luminous lamination and forms one first protective layer.
4. the manufacture method of light-emitting component as claimed in claim 3, wherein this first protective layer comprises at least a material or other alternative material that is selected from gold, platinum, titanium, silicon nitride, silica, epoxy resin, the photo anti-corrosion agent material institute constituent material cohort.
5. the manufacture method of light-emitting component as claimed in claim 1 wherein, is cut in the light-emitting component step in a laser beam, and first lower surface of this laser beam cutting substrate produces one first Cutting Road.
6. the manufacture method of light-emitting component as claimed in claim 1 wherein, before a laser beam cuts a light-emitting component step, forms one second protective layer on first lower surface of this substrate.
7. the manufacture method of light-emitting component as claimed in claim 1 wherein, is cut in the light-emitting component step in a laser beam, and first upper surface of this laser beam cutting substrate produces one second Cutting Road.
8. the manufacture method of light-emitting component as claimed in claim 7, wherein, the degree of depth of this second Cutting Road arrives substrate.
9. the manufacture method of light-emitting component as claimed in claim 1, wherein, the composition of this acid solution is the mixed solution of phosphoric acid and sulfuric acid.
10. the manufacture method of light-emitting component as claimed in claim 9, wherein, the temperature of the mixed solution of this phosphoric acid and sulfuric acid is higher than 250 ℃.
11. the manufacture method of light-emitting component as claimed in claim 1 wherein, after acid solution cleans this light-emitting component step, also comprises a fracture step.
12. the manufacture method of light-emitting component as claimed in claim 1, wherein, this substrate comprise be selected from sapphire, SiC, GaN, AlN, ZnO, and MgO institute constituent material cohort at least a material or other alternative material.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2005101269393A CN100407461C (en) | 2005-11-28 | 2005-11-28 | Method for producing luminous element with high-illuminating effect |
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|---|---|---|---|
| CN2005101269393A CN100407461C (en) | 2005-11-28 | 2005-11-28 | Method for producing luminous element with high-illuminating effect |
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| CN100407461C true CN100407461C (en) | 2008-07-30 |
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Families Citing this family (8)
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| TWI438836B (en) * | 2010-11-05 | 2014-05-21 | Win Semiconductors Corp | A fabrication method for dicing of semiconductor wafers using laser cutting techniques |
| CN102569544A (en) * | 2010-12-27 | 2012-07-11 | 同方光电科技有限公司 | Method for manufacturing individual light-emitting diodes |
| US9527158B2 (en) * | 2011-07-29 | 2016-12-27 | Ats Automation Tooling Systems Inc. | Systems and methods for producing silicon slim rods |
| CN102544270A (en) * | 2012-03-06 | 2012-07-04 | 中国科学院半导体研究所 | Method for preparing inverted trapezoidal gallium-nitride-based light emitting diode |
| CN103681980B (en) * | 2012-09-25 | 2016-12-21 | 上海蓝光科技有限公司 | A kind of cutting method of the light emitting diode containing back silver-plated reflecting layer |
| TWI618268B (en) | 2012-12-07 | 2018-03-11 | 晶元光電股份有限公司 | Light emitting devive |
| CN110289346B (en) * | 2012-12-14 | 2021-11-30 | 晶元光电股份有限公司 | Method for forming light-emitting device and light-emitting device manufactured by same |
| JP6357654B2 (en) * | 2013-04-17 | 2018-07-18 | パナソニックＩｐマネジメント株式会社 | Compound semiconductor device and resin-encapsulated semiconductor device |
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