CN100421252C - Organic electro-luminescence display device and method for fabricating the same - Google Patents
Organic electro-luminescence display device and method for fabricating the same Download PDFInfo
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- CN100421252C CN100421252C CNB2005101237636A CN200510123763A CN100421252C CN 100421252 C CN100421252 C CN 100421252C CN B2005101237636 A CNB2005101237636 A CN B2005101237636A CN 200510123763 A CN200510123763 A CN 200510123763A CN 100421252 C CN100421252 C CN 100421252C
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
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- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
- H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
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Abstract
An organic electro-luminance display device includes a first substrate and a second substrate; an array element on the first substrate, the array element including at least one thin film transistor (TFT) in each sub-pixel; a first electrode on the second substrate; a buffer on the first electrode including a first buffer at an outer region partitioning each sub-pixel and a second buffer at a region including a stepped portion of the first buffer, wherein a undercut structure is formed by the first and second buffers; an organic electro-luminescent layer in each sub-pixel partitioned by the second buffer; a second electrode formed on the organic electro-luminescent layer; and a conductive spacer for electrically connecting the TFT to the second electrode.
Description
The application requires to enjoy the korean patent application 2004-100627 that submitted on December 2nd, 2004, korean patent application 2004-115485 that on December 29th, 2004 submitted to and the rights and interests of the korean patent application 2005-0087895 that submitted on September 21st, 2005, quotes its full content as a reference at this.
Technical field
The present invention relates to a kind of organic elctroluminescent device and manufacture method thereof.
Background technology
The various flat-panel display devices that can substitute Heavy Weight and bulky cathode ray tube (CRT) have recently been begun to research and develop.For example, these flat-panel display devices are liquid crystal display (LCD) device, Field Emission Display (FED) device, plasma display (PDP) device and electro-luminescence display device.
At the display quality that improves flat-panel monitor with provide and carried out many trials aspect the large-sized monitor.Wherein, this electro-luminescence display device is an emissive type and by adopting the charge carrier such as electronics and hole to excite phosphate material to come display video image.This electroluminescent device is divided into inorganic electroluminescent display device and organic elctroluminescent device.Yet inorganic electroluminescent display device needs the high voltage of 100-200V, and this organic elctroluminescent device can be driven by the low dc voltage of 2-20V.In addition, this organic elctroluminescent device has the advantage such as wide visual angle, fast response time and high-contrast.Therefore, this organic elctroluminescent device can be used as graphic alphanumeric display, televimonitor or planar light source.And, because this organic elctroluminescent device slim body, in light weight and color vision is graceful, so they are suitable for follow-on flat-panel display device.
The passive matrix driving method is widely used in driving the organic elctroluminescent device that does not need thin-film transistor (TFT).But the passive matrix driving method has many limitation at aspects such as resolution, power consumption, useful lifes.Therefore, begun at the display device research and development active array type driving method of future generation that needs high-resolution and large scale screen.
Below with reference to the organic elctroluminescent device of description of drawings according to prior art.
Figure 1 shows that schematic sectional view according to the active matrix type organic electroluminescent display device of prior art.For convenience, Fig. 1 explanation comprises a pixel region of red (R) sub-pixel, green (G) sub-pixel and indigo plant (B) sub-pixel.
With reference to Fig. 1, first substrate 10 and second substrate 30 are positioned opposite to each other.In each sub-pixel, form TFT T on the transparent substrates 1 of first substrate 10.On the TFT T and first electrode 12, be formed with organic electroluminescent layer 14.This organic electro luminescent layer 14 comprises the luminescent material that shows the red, green and blue look.On this organic electro luminescent layer 14, form second electrode 16.This first electrode 12 and second electrode 16 apply electric field to organic electro luminescent layer 14.First substrate 10 that will be formed with organic electro luminescent layer 14 is bonded to second substrate 30.
Active matrix type organic electroluminescent display device shown in Figure 1 has bottom-emission type structure.When first electrode 12 and second electrode 16 were used separately as anode and negative electrode, this first electrode 12 was formed by transparent conductive material and second electrode 16 is formed by the metal with low work function.In this case, this organic electro luminescent layer 14 comprises that order is formed at hole injection layer 14a, hole transmission layer 14b, luminescent layer 14c and the electron transfer layer 14d on first electrode 12.Red, green, blue look luminescent material is set in the luminescent layer 14c of sub-pixel.
In organic elctroluminescent device, stacking array element and the organic electroluminescent LED that comprises TFT and electrode on same substrate.To the independent substrate that is used to encapsulate, make organic elctroluminescent device by the substrate bonding that will be formed with array element and organic electroluminescent LED.In this case, the output of this organic elctroluminescent device is by the product decision of the output of the output of array element and organic electroluminescent LED.Therefore, whole operation output is subjected to forming the restriction of organic electroluminescent LED operation greatly.For example, although can successfully form array element, working as at common thickness is about 1000
This organic electro luminescent layer of film because during outer boundry particle or other factors generation defective, this organic elctroluminescent device is with regard to defectiveness.
In addition, although have very high stability and have the very high degree of freedom owing to encapsulating according to the bottom-emission type organic elctroluminescent device of prior art, it has limitation at aperture analogy mask.Therefore, be difficult to this bottom-emission type organic elctroluminescent device is applied in the product of high definition.
For top emission type organic electro luminescent device according to prior art, the design of TFT be easy to and the aperture higher than very.Therefore, has certain advantage aspect the useful life of product.But,, therefore limited the material selection because negative electrode is arranged on the organic electro luminescent layer.Therefore, limited light transmittance and reduced luminous efficiency.
Summary of the invention
Therefore the present invention relates to a kind of organic elctroluminescent device and manufacture method thereof, it can be eliminated basically because the limitation of prior art and not enough one or more problem that produces.
The invention has the advantages that provides a kind of organic elctroluminescent device and manufacture method thereof, and wherein electrode does not adopt traditional back taper dividing plate and be separated from one another in sub-pixel.
Below supplementary features of the present invention and advantage will be described, a part can find out from specification that a part is apparent for being familiar with those of ordinary skill in the art when carrying out following analysis, or by practice of the present invention is learnt.Adopt specifically described structure in specification and claims and the accompanying drawing just can realize and reach these and other advantage of the present invention.
For principle according to the present invention realizes these and other advantage, carry out specifically and widely explanation here, a kind of organic elctroluminescent device comprises first substrate and second substrate; Be positioned at the array element on first substrate, described array element comprises at least one thin-film transistor that is arranged in each sub-pixel; Be positioned at first electrode on second substrate; Be positioned at the resilient coating on first electrode, comprise first buffering area of each sub pixels boundary region and be positioned at second buffering area that comprises the first buffering area step part, the described resilient coating of first and second buffering areas that comprises has etching part first buffering area to expose the undercut construction of described first electrode; Be arranged in the luminescent layer of each sub-pixel; Be positioned at second electrode on the luminescent layer; And the conductive liner bedding and padding that are used for the drain electrode of TFT is electrically connected to second electrode.
In another aspect of this invention, a kind of method that is used to make organic elctroluminescent device comprises: form array element on first substrate, described array element comprises at least one thin-film transistor that is arranged in each sub-pixel; On second substrate, form first electrode; On first electrode, form resilient coating, described resilient coating comprises first buffering area at the place, perimeter that divides each sub-pixel and comprises subregional second buffering area of the first buffering area stage portion, wherein form undercut construction by first and second buffering areas, described undercut construction is the space that forms with overlapping part first buffering area of second resilient coating by removing not, to expose first electrode, and form first auxiliary electrode on first electrode surface of described exposure, wherein the stage portion that is looped around first buffering area with cone shape assigns to form second buffering area with truncated conical shape; In each each sub-pixel of dividing by second buffering area, be formed with organic electroluminescent layer; On organic electro luminescent layer, form second electrode; And together with first and second substrate bondings.
In still another aspect of the invention, a kind of organic elctroluminescent device comprises the substrate with a plurality of pixel regions; Be positioned at first electrode on the substrate; Be arranged in the organic electro luminescent layer on each pixel region first electrode; Be formed at second electrode on the organic electro luminescent layer in each pixel region; Be positioned at first buffering area on first electrode, described first buffering area is around the zone that is formed with the described organic electro luminescent layer and second electrode; Be looped around second buffering area with truncated conical shape of the step part formation of first buffering area with cone shape; By removing not the undercut construction that forms with overlapping part first buffering area of second buffering area, exposing first electrode, and on first electrode surface of described exposure, form first auxiliary electrode.
Of the present invention more on the one hand, a kind of method that is used to make organic elctroluminescent device comprises: preparation has the substrate of pixel region; On described substrate, form first electrode; On except first electrode of pixel region, form first buffering area; Step part at first buffering area forms second buffering area to surround described pixel region; By not overlapping part first buffering area formation undercut construction of etching with second buffering area, to expose first electrode, and form first auxiliary electrode on first electrode surface of described exposure, wherein the stage portion that is looped around first buffering area with cone shape assigns to form second buffering area with truncated conical shape; Be formed with organic electroluminescent layer at pixel region; And on organic electro luminescent layer, form second electrode.
Be appreciated that above-mentioned generality is described and following detailed description is exemplary and indicative and aims to provide further as claimed in claim explanation of the present invention.
Description of drawings
Comprise the accompanying drawing that is used to provide the further understanding of the present invention and incorporated composition the application part, it shows embodiments of the present invention, and is used from explanation principle of the present invention with specification one.In the accompanying drawings:
Figure 1 shows that schematic cross-section according to the organic elctroluminescent device of prior art;
Figure 2 shows that plane graph according to the organic elctroluminescent device of first embodiment of the invention;
Figure 3 shows that along the sectional view of the I-I ' line drawing among Fig. 2;
Figure 4 shows that the enlarged drawing of regional A among Fig. 3;
Figure 5 shows that photo according to the buffering area undercutting degree of depth of silane and ammonia component ratio;
Fig. 6 A is depicted as sectional view according to the organic elctroluminescent device manufacture method of first embodiment of the invention to Fig. 6 F;
Figure 7 shows that flow chart according to the organic elctroluminescent device manufacture method of first embodiment of the invention;
Figure 8 shows that plane graph according to the organic elctroluminescent device of second embodiment of the invention;
Fig. 9 A is depicted as sectional view according to the organic elctroluminescent device manufacture method of second embodiment of the invention to Fig. 9 G; And
Figure 10 shows that plane graph according to the organic elctroluminescent device of third embodiment of the invention.
Embodiment
Describe embodiments of the present invention now in detail, embodiment is shown in the drawings.In whole accompanying drawing, use same Reference numeral to represent identical or close parts as far as possible.
Figure 2 shows that plane graph, and Figure 3 shows that along the sectional view of the I-I ' line drawing among Fig. 2 according to the organic elctroluminescent device of first embodiment of the invention.
With reference to Fig. 2 and 3, this organic elctroluminescent device 200 comprises R sub-pixel, G sub-pixel and the B sub-pixel of arranging and constitute a pixel with matrix form.This sub-pixel is separated from one another by the resilient coating that comprises first buffering area 533 and second buffering area 535.Auxiliary electrode 139 is arranged at around the sub-pixel with grid shape.This auxiliary electrode 139 contacts to provide voltage to sub-pixel jointly with first electrode 132.
In Fig. 2, Reference numeral 810 is called the wadding contact hole and will describes its 26S Proteasome Structure and Function by reference Fig. 8 hereinafter.
The resilient coating that will have first buffering area 533 and second buffering area 535 forms has undercut construction.On first electrode 132, form by the auxiliary electrode 139 that forms with second electrode, 138 identical materials.
In organic elctroluminescent device 200, first substrate 110 and second substrate 130 are intervally installed with preset distance.On the transparent substrates 100 of first substrate 110, form array element 120.In addition, on the inner surface of the transparent substrates 101 of second substrate 130, form organic electroluminescent LED E.
The organic electroluminescent LED E that is formed on the transparent substrates 101 of second substrate 130 comprises first electrode 132, first buffering area 533 and second buffering area 535.On transparent substrates 101, form first electrode 132 as public electrode.The outer peripheral areas of dividing each sub-pixel on first electrode 132 forms first buffering area 533.Zone at the step part that comprises first buffer 533 forms second buffering area 535 with truncated conical shape.
In undercut construction, remove not with overlapping part first buffering area 533 of second buffering area 535 to form space 534.As shown in Figure 3 and Figure 4, second electrode 138 of each sub-pixel is separated in this space 534.Therefore, do not need to be used for the back taper dividing plate of traditional organic elctroluminescent device here with second electrode that separates each sub-pixel.
This organic electroluminescent LED E also includes organic electroluminescent layer 136.In each sub-pixel, be formed with the organic electroluminescent layer 136 and second electrode 138 in turn.That is, in each sub-pixel, be formed with the organic electroluminescent layer 136 and second electrode 138 and open with the organic electro luminescent layer and second electrode separation in the adjacent subpixels by first buffering area 533 and second buffering area 535.
This organic electro luminescent layer 136 comprises the stacking in turn first carrier blocking layers 136a, luminescent layer 136b and the second carrier blocking layers 136c.This first carrier blocking layers 136a and the second carrier blocking layers 136c are used for to luminescent layer 136b injection or transmission electronic or hole.Determine this first and second carrier blocking layers 136a and 136c by being provided with of anode and negative electrode.For example, when this luminescent layer 136b is formed by macromolecular compound and first and second electrodes 132 and 138 is configured to anode and negative electrode respectively, the first carrier blocking layers 136a that contacts with first electrode 132 has the laminated construction of hole injection layer and hole transmission layer, and the second carrier blocking layers 136c that contacts with second electrode 138 has the laminated construction of electron injecting layer and electron transfer layer.
Be formed with organic electroluminescent layer 136 by vacuum deposition method or such as solution casting methods such as jet ink process, printing process, nozzle ejection operation, roll banding operations by macromolecular compound and low molecular compound.When organic electro luminescent layer 136 is formed by low molecular compound, use vapour deposition method usually.Simultaneously, when organic electro luminescent layer 136 is formed by macromolecular compound, use jet ink process usually.Although adopt jet ink process to be formed with organic electroluminescent layer 136 in the present invention, should be realized that, comprise that the several different methods of said method may be used to be formed with organic electroluminescent layer 136.
The array element 120 of first substrate 110 comprises TFT T.In order to apply electric current to organic electroluminescent LED E, second electrode 138 and TFT T position connected to one another are provided with column conductive liner bedding and padding 114 in each sub-pixel.These conductive liner bedding and padding 114 with constant altitude are electrically connected two substrates and keep two box gaps between the substrate.That is, these conductive liner bedding and padding 114 are electrically connected to the drain electrode 112 that is arranged at the TFT T on first substrate 110 in each subpixel area at second electrode 138 that is arranged on second substrate 130.Form conductive liner bedding and padding 114 by metal coat by the column wadding that organic insulator forms.Owing to exist the pixel of these conductive liner bedding and padding 114, the first substrates 110 and second substrate 130 bonding to make that electric current can be from wherein flowing through to concern one to one.
Now with the coupling part between more detailed description conductive liner bedding and padding 114 and the TFT T.
Because this organic elctroluminescent device is a top emission type, this organic electro luminescent layer 136 is luminous to second substrate 130.Preferably, first electrode 132 is selected from transparent conductive material, and second electrode 138 is selected from the opaque metal material simultaneously.
Although not shown in the drawings, this array element 120 also comprises scan line and intersects also each other with separated holding wire of preset distance and power line with scan line.Array element 120 also comprises switching TFT and the storage capacitance that is arranged at scan line and holding wire lap.
This organic elctroluminescent device is a dual panel type, and second substrate 130 that wherein is formed with electroluminescent diode E is bonded to first substrate 110 that is formed with array element 120.In other words, this array element 120 is configured on the different substrates with organic electroluminescent LED E.Therefore, be different from array element and organic electroluminescent LED and be formed at situation on the same substrate, the output of this organic electroluminescent LED can not be subjected to the influence of array element output and can obtain the height degree of freedom about the TFT structure.In addition,, compare, can improve the degree of freedom about first electrode with the prior art structure that first electrode is formed on the array element owing on transparent substrates 101, form first electrode 132 of organic electroluminescent LED E.
In above-mentioned top emission type organic electro luminescent display device, can not consider that the aperture recently designs TFT, thereby when forming array element, improve efficient.And, can produce have high aperture than and high-resolution product.In addition,, therefore compare, can more effectively stop outside air, thereby improve the stability of product with the top emission type organic electro luminescent display device of prior art because organic elctroluminescent device is a dual panel type.
Use jet ink process to form the organic electro luminescent layer 136 that forms by macromolecular compound.In this case, for preventing that ink from overflowing buffering area and all being useful by macromolecular compound being limited in shape and the thickness of adjusting film in the light-emitting zone.For this reason, using plasma is carried out hydrophobic (hydrophobicity) operation usually.
As mentioned above, because therefore second buffering area 535 can avoid macromolecular compound to flow into the step part of first buffering area 533 during jet ink process around first buffering area 533 and with undercut construction etching first buffering area 533.Therefore, in each sub-pixel, can be formed uniformly organic electro luminescent layer 136.
Describe the structure of first buffering area 533 and second buffering area 535 in detail with reference to Fig. 4.
Figure 4 shows that the enlarged drawing of regional A among Fig. 3.
With reference to Fig. 4, on the transparent substrates 101 of second substrate 130, form first electrode 132 of organic electroluminescent LED E, this second substrate 130 is the head substrate of organic elctroluminescent device.The outer peripheral areas place that divides sub-pixel on first electrode 132 forms first buffering area 533.Location at the step part that comprises first buffering area 533 forms second buffering area 535.That is, form second buffering area 535 with well structure around organic electro luminescent layer 136.
In addition, in the plasma etching operation, remove not part first buffering area 533 overlapping with second buffering area 535 with undercut construction.Therefore, adjacent sub-pixel is separated from one another.That is, because the space 534 that forms by undercut construction, it is separated from one another to be formed in the sub-pixel second electrode 138 on the organic electro luminescent layer 136.Therefore, this space 534 can be used as dividing plate, and need not be provided for the back taper dividing plate in traditional organic elctroluminescent device.Because do not form traditional dividing plate, thus can simplify manufacturing process and increase the width of sub-pixel, thus improve the aperture ratio.
And, form auxiliary electrode 139 on first electrode 132 in the space 534 that forms by undercut construction.In the process that forms second electrode 138, form auxiliary electrode 139.This auxiliary electrode 139 has reduced the resistance of first electrode 132.Particularly, distance second buffering area 535 inwardly forms at least one surface of first buffering area 533 greater than 0.1 μ m.
In the zone of the step part that comprises first buffering area 533, form second buffering area 535 with well structure.Therefore, the hydrophobic operation of carrying out for side surface has prevented that ink that macromolecular compound constitutes from being attracted by the step part of first buffering area 533 and flow into wherein.Like this, this second buffering area 535 can obtain capture-effect.
Therefore, the present invention can form by location at the step part that comprises first buffering area 533 second buffering area 535 solve by the ink between the sub-pixel overflow the problems referred to above of generation, the melanism that causes by the connection between second electrode 138 and the problem that is difficult to adjust organic electro luminescent layer thickness.Therefore, can improve the picture quality of organic elctroluminescent device.
The location of being divided by second buffering area 535 in sub-pixel is formed with organic electroluminescent layer 136, and forms second electrode 138 on organic electro luminescent layer 136.
Figure 5 shows that photo according to the buffering area undercutting degree of depth of silane and ammonia component ratio.
With reference to Fig. 5, form the silicon nitride that is used as first buffering area, 533 materials by the chemical reaction between silane (SiH4) and the ammonia (NH3).Be formed at undercutting depth d in first buffering area 533 according to silane with the ammonia component ratio and different.That is, when when the plasma etching silicon nitride, the etch depth of undercutting can change along with silane and ammonia component ratio.
Particularly, shown in Fig. 5 (a), when the component ratio of silane and ammonia was 1: 3, the undercutting degree of depth of first buffering area 533 was about 0.256 μ m.Shown in Fig. 5 (b), when the component ratio of silane and ammonia was 1: 4, the undercutting degree of depth of first buffering area 533 was about 0.929 μ m.And shown in Fig. 5 (c), when the component ratio of silane and ammonia was 1: 6, the undercutting degree of depth of first buffering area 533 was about 1.641 μ m.That is, when using plasma etching when wherein the component content of ammonia is at least first buffering area 533 of silane component content twice, this buffering area 533 has undercutting.
Below will describe manufacture method in detail according to the organic elctroluminescent device of embodiment of the present invention.
Fig. 6 A is depicted as the sectional view that is used to make according to the organic elctroluminescent device method of first embodiment of the invention to Fig. 6 F, the flow chart that is used to make according to the organic elctroluminescent device method of first embodiment of the invention shown in Figure 7.
With reference to Fig. 6 A, at operation S1, preparation has the transparent substrates 101 of a plurality of sub-pixels with matrix structure, and on the whole surface of this transparent substrates 101 transparent conductive metal of deposition such as tin indium oxide (ITO), thereby form first electrode 132.
With reference to Fig. 6 B, at operation S2, deposition of silica (SiO on the transparent substrates 101 that is formed with first electrode 132
2) or silicon nitride (SiNx).Then, by adopt photo-mask process and etching work procedure to this sedimentary deposit composition to form first buffering area 533.Form first buffering area 533 in the location of dividing sub-pixel.
With reference to Fig. 6 C, at operation S3, deposition is different from the material (for example, polyimide-based material) of first buffering area 533 on the whole surface of the transparent substrates 101 that comprises first buffering area 533, and adopts photo-mask process and etching work procedure to its composition.Therefore, the location at the step part that comprises first buffering area 533 forms second area 535.That is, form second buffering area 535 to center on the subpixel area that is formed with organic electro luminescent layer with trap type structure.Therefore, the top mid portion of first buffering area 533 is not covered by second buffering area 535 and is exposed to the external world.
In addition, the location at the step part that comprises first buffering area 533 forms second buffering area 535 with trap type structure (perhaps truncated conical shape).Therefore, the hydrophobic treatment that the side is carried out has prevented that the step part that is attracted to first buffering area 535 by the ink that macromolecular compound forms from also flowing into wherein.
With reference to Fig. 6 D, at operation S4, the mid portion that adopts second buffering area 535 to expose as mask etching first buffering area 533.Carry out etching work procedure in this mode and be arranged in the space 534 of the mid portion of the undercut construction of first buffering area 533 and first buffering area 533, thereby expose first electrode 132 with formation.
Preferably the dry etching of using plasma is used for this etching work procedure.When first buffering area was formed by silicon nitride-based material, dry etching used oxygen and fluorine base gas such as CF
4And SF
6Mixture.Like this, this dry etching had not only been carried out being etched with of first buffering area 533 and is formed undercut construction but also carry out hydrophobic operation to second buffering area, 535 surfaces.As above described with reference to Fig. 5, the silicon nitride composition that should determine first buffering area 533 is to form the undercutting of required size in buffering area.Preferably, distance second buffering area 535 inwardly forms at least one surface of first buffering area 533 greater than 0.1 μ m.In addition, can before dry etching, adopt oxygen gas plasma to carry out hydrophobic treatment.
Because plasma is used for etching first buffering area 533 and is coated on the surface of first electrode 132 and second buffering area 535, the surface that the surface of this first electrode 132 becomes hydrophobic and second buffering area 535 also becomes hydrophobic.
As shown in Figure 5, when first buffering area 533 is formed by silicon nitride, can be according to the component ratio control undercutting degree of depth of silane and ammonia.Have first resilient coating 533 of the silicon nitride of predetermined component ratio by formation, in the plasma dry etching work procedure, can carry out etching work procedure and hydrophobic operation simultaneously.
Below will illustrate and form undercut construction and form the surface-treated alternative method.In these embodiments, this first buffering area 533 is by silicon nitride (SiNx) or silicon dioxide (SiO
2) form, and preferably second buffering area 535 is formed by organic material that is different from first buffering area 533 or inorganic material.
At first, when first buffering area 533 by silicon nitride (SiNx) when forming, the plasma dry etching work procedure forms undercut construction and simultaneously second buffering area 535 is carried out hydrophobic treatment at first buffering area, 533 places that expose.That is, after carrying out the oxygen surface treatment, remove the exposed surface of first buffering area 533 that constitutes by silicon nitride (SiNx) to form undercut construction by the etching work procedure that adopts oxygen and fluorine-based mixed gas.
Secondly, when first buffering area 533 by silicon dioxide (SiO
2) when forming, carry out independent wet etching operation to form undercut construction at first buffering area, 533 places that expose.That is, do not form undercut construction with the exposed surface of overlapping first buffering area 533 of second buffering area 535 by wet etching.Like this, usually, after the wet etching operation, need the hydrophobic treatment of adding.
With reference to Fig. 6 E, in operation S5, be formed with organic electroluminescent layer 136 by adopting on first electrode 132 of inkjet deposited device (not shown) in each sub-pixel.This organic electro luminescent layer 136 produce R, G and B color arbitrarily one of them, and form by macromolecular material or low molecular material.
When this organic electro luminescent layer 136 is formed by macromolecular material and first electrode 132 and second electrode 138 when being respectively negative electrode and anode, this organic electro luminescent layer 136 comprises stacking successively hole transmission layer, luminescent layer and electron transfer layer.This hole/electron transfer layer is used for to luminescent layer injected hole or electronics and transmits.The hole transmission layer that should contact with first electrode 132 has the laminated construction of hole injection layer and hole transmission layer, and should have the laminated construction of electron injecting layer and electron transfer layer with second electrode, 138 contacting electronic transport layers.
As mentioned above, in the operation that forms undercut construction, the surface of first electrode 132 becomes surface hydrophobic and second buffering area 535 and becomes hydrophobic.Therefore, the surface of the organic electro luminescent layer 136 that forms by ink ejecting method and first electrode 132 has good adhesion strength and has very poor adhesion strength with the surface of second buffering area 535.Because this surface characteristic can form this organic electro luminescent layer 136 on first electrode 132 uniformly in each sub-pixel.
With reference to Fig. 6 F, in operation S6, depositing metal layers is to form second electrode 138 as negative electrode on the whole surface of the transparent substrates 101 that is formed with organic electro luminescent layer 136.This metal level is formed by gallium, magnesium, aluminium etc.
Because this undercut construction, second electrode 138 that is formed on the organic electro luminescent layer of sub-pixel can not be connected to each other.That is, second electrode 138 in the sub-pixel is separated from one another by the space 534 that is arranged in second buffering area 535.Therefore, each sub-pixel has independently second electrode 138 and space 534 as dividing plate, and traditional back taper dividing plate need be set.
When forming second electrode 138, form on first electrode 132 in the space 534 of undercut area by the auxiliary electrode 139 that forms with second electrode, 138 identical materials.This auxiliary electrode 139 is electrically connected to first electrode 132 and has therefore reduced the resistance of first electrode 132.
The plane graph of the organic elctroluminescent device according to second embodiment of the invention shown in Figure 8, Fig. 9 A is depicted as the sectional view that is used to make according to the organic elctroluminescent device method of second embodiment of the invention to Fig. 9 G.Because therefore identical to shown in the 6F of the structure of organic elctroluminescent device and Fig. 3 and Fig. 6 A will mainly center on different piece and describe among Fig. 8.
With reference to Fig. 8, organic elctroluminescent device comprises the R with matrix structure, G and the B sub-pixel that constitutes a pixel.This sub-pixel is separated from one another by resilient coating.And this resilient coating comprises first buffering area 533 and second buffering area 535.With mesh shape auxiliary electrode 139 is set around sub-pixel.This auxiliary electrode 139 electrically contacts first electrode 132 to apply voltage jointly to sub-pixel.Each auxiliary electrode 139 comprises the first auxiliary electrode 139a and the second auxiliary electrode 139b.
Identical with first execution mode, first buffering area 533 that is formed at second buffering area, 535 inside has undercut construction.But, be exposed to the laminated construction that forms the first and second auxiliary electrode 139a and 139b on the first extraneous electrode 132 by undercut construction.
As mentioned above, vapour deposition method is generally used for forming the organic electro luminescent layer 136 that is made of low molecular compound.Like this, at first electrode 132 with prevent to reduce between the auxiliary electrode of first electrode, 132 resistance and can form insulating barrier.For this reason, the auxiliary electrode 139 of second execution mode has the stacking electrode structure of the first and second auxiliary electrode 139a and 139b.
Hereinafter with reference to Fig. 9 A to Fig. 9 G explanation manufacture method according to the organic elctroluminescent device of second embodiment of the invention.
To Fig. 9 G, on transparent substrates 101, form first electrode 132 with reference to Fig. 9 A, and form the first auxiliary electrode 139a in the location of dividing sub-pixel with a plurality of sub-pixels that are provided with matrix structure.This first auxiliary electrode 139a is formed to reduce the resistance of first electrode 132 that is formed by transparent conductive metal by the metal with high conductivity.
After forming auxiliary electrode 139a, adopt photo-mask process and etching work procedure on the first auxiliary electrode 139a, to form by silicon dioxide (SiO
2) or first buffering area 533 that constitutes of silicon nitride (SiNx).
Then, deposition is different from the material (polyimide-based material) of first buffering area 533 and its composition is formed second buffering area 535 with the location at the step part that comprises first buffering area 533 on the whole surface of transparent substrates 101.Because operation subsequently is similar to 6F to Fig. 6 B, omits detailed description thereof for the sake of brevity.
Therefore, because undercut construction is exposed to the external world with first electrode 132 with the first auxiliary electrode 139a that is formed at first buffering area, 533 belows.
Then, be formed with organic electroluminescent layer 136 on first electrode 132 in being exposed to subpixel area, thereby and layer metal deposition formed second electrode 138 that is positioned on the organic electro luminescent layer 136 to the whole zone of transparent substrates 101.At this moment, first and second buffering areas 533 and 535 material, be used to form undercut construction operation described identical to 6F with hydrophobic operation with Fig. 6 A.
When forming second electrode 138, part second electrode 138 is formed in the undercut construction to form the second auxiliary electrode 139b.Therefore, because this undercut construction is being arranged in formation first and second auxiliary electrode 139a and the 139b on first electrode 132 of first buffering area 533.
As mentioned above, can on the first auxiliary electrode 139a, form insulating barrier.Therefore, even the second auxiliary electrode 139b does not electrically contact with first electrode 132, but this first auxiliary electrode 139a can reduce the resistance of first electrode 132.
In second execution mode, forming the first electrode 132 formation first auxiliary electrode 139a on first electrode 132 then on the transparent substrates 101.But, should be realized that, can put upside down this order.That is, can on transparent substrates 101, form the first auxiliary electrode 139a, on the first auxiliary electrode 139a, form first electrode 132 then.
Figure 10 shows that plane graph according to the organic elctroluminescent device of third embodiment of the invention.In Figure 10, a pixel region (that is three sub-pixels) only is shown for the sake of brevity.Should be realized that, be illustrative embodiments of the present invention and can carry out various modifications according to principle of the present invention with reference to the described execution mode of Figure 10.
Structure difference between the organic elctroluminescent device of Figure 10 and Fig. 2 will be described now.
With reference to Fig. 2, divide sub-pixel and separated from one another forward by first buffering area 533 and second buffering area 535.Particularly, the location at the step part that comprises first buffering area 533 forms second buffering area 535.Be wound with organic electroluminescent layer with trap type structure ring and form second buffering area 535.And, between sub-pixel, form auxiliary electrode 139 with grid shape.This auxiliary electrode 139 and first electrode 132 electrically contact to reduce the resistance of first electrode 132.
With reference to Figure 10, each sub-pixel comprises first buffering area 533 with polygonized structure, be formed at second buffering area 535 of the step part location that comprises first buffering area 533 and be arranged at from zone that a side of polygon first buffering area 533 is protruded and the conduction space contact portion 810 that is electrically connected to the array element of first substrate.The turning of this sub-pixel is arranged in the zone of being divided by second buffering area 535 for circular and its edge.Because undercut construction, second electrode that is formed in the sub-pixel is electrically insulated from each other.Expose portion corresponding to first buffering area 533 forms undercut construction.Therefore, this sub-pixel of driving that can be independent.
In the 3rd execution mode of Figure 10, be positioned in the subpixel area in order not conduct electricity space contact portion 810, the misalignment of certain distance and bonded to one another can appear in first and second substrates.
Can form this undercut construction by dry etching.The degree of depth of undercutting is subjected to the control of silicon nitride composition, and this silicon nitride can be subjected to the control of silane and ammonia component ratio in the silicon nitride deposition process.
By the plasma dry etching work procedure, can carry out simultaneously and be used for undercut construction and surface-treated etching work procedure, thereby simplify manufacturing process and improved output.Therefore in addition, the conventional baffle that does not need to have reverse tapered shapes is come the segregant pixel, can further simplify manufacturing process and can increase the width of sub-pixel, thereby improve the aperture ratio.
In addition, because the conduction separating layer that forms simultaneously with second electrode contact with first electrode, so can reduce the resistance of first electrode in the space of first buffering area that exposes.And, owing to have truncated conical shape and be formed at second buffering area of the location that comprises the first buffering area step part, can be formed uniformly the organic electro luminescent layer that constitutes by macromolecular compound.And, can reduce the attraction effect of ink by the step part of in jet ink process, removing buffering area, thereby improve the injection direction tolerance limit.
Obviously, can carry out various modifications and variations to the present invention to those skilled in the art.Thereby, the invention is intended to cover and fall into improvement of the present invention and the modification that limits by claims and equivalent thereof.
Claims (50)
1. an organic elctroluminescent device comprises
First substrate and second substrate;
Be positioned at the array element on first substrate, described array element comprises at least one thin-film transistor that is arranged in each sub-pixel;
Be positioned at first electrode on second substrate;
Be positioned at the resilient coating on first electrode, comprise first buffering area of each sub pixels boundary region and second buffering area of the first buffering area step part, the described resilient coating of first and second buffering areas that comprises has etching part first buffering area to expose the undercut construction of described first electrode;
Be arranged in the luminescent layer of each sub-pixel;
Be positioned at second electrode on the luminescent layer; And
Be used for the drain electrode of thin-film transistor is electrically connected to the conductive liner bedding and padding of second electrode.
2. organic elctroluminescent device according to claim 1 is characterized in that, inwardly forms at least one surface of described first buffering area greater than the gap of 0.1 μ m with distance second buffering area.
3. organic elctroluminescent device according to claim 1 is characterized in that, described first and second buffering areas are formed by different materials.
4. organic elctroluminescent device according to claim 3 is characterized in that, described second buffering area has the truncated conical shape that is looped around the step part formation of first buffering area with cone shape.
5. organic elctroluminescent device according to claim 1 is characterized in that, described second buffering area has the trap type structure around luminescent layer.
6. organic elctroluminescent device according to claim 1 is characterized in that described organic electro luminescent layer is formed by macromolecular material.
7. method that is used to make organic elctroluminescent device comprises:
Form array element on first substrate, described array element comprises at least one thin-film transistor that is arranged in each sub-pixel;
On second substrate, form first electrode;
Form resilient coating on first electrode, described resilient coating comprises first buffering area that is positioned at the perimeter of dividing each sub-pixel and comprises subregional second buffering area of the first buffering area stage portion, wherein forms undercut construction by first and second buffering areas,
Described undercut construction is the space that forms with overlapping part first buffering area of second resilient coating by removing not, to expose first electrode, and form first auxiliary electrode on first electrode surface of described exposure, wherein the stage portion that is looped around first buffering area with cone shape assigns to form second buffering area with truncated conical shape;
In by each subpixel area of dividing, be formed with organic electroluminescent layer by second buffering area;
On organic electro luminescent layer, form second electrode; And
With first and second substrate bondings together.
8. method according to claim 7 is characterized in that, also comprises the conductive liner bedding and padding that are formed for the drain electrode of thin-film transistor is electrically connected to second electrode.
9. method according to claim 7 is characterized in that, described second buffering area has the trap type structure around organic electro luminescent layer.
10. method according to claim 7 is characterized in that described organic electro luminescent layer is formed by macromolecular material.
11. method according to claim 10 is characterized in that, forms macromolecular material by the solution casting method.
12. method according to claim 7 is characterized in that, inwardly forms at least one surface of described first buffering area greater than the gap of 0.1 μ m with distance second buffering area.
13. method according to claim 7 is characterized in that, described first and second buffering areas are formed by different materials.
14. method according to claim 13 is characterized in that, described first buffering area comprises silicon nitride or silicon dioxide.
15. method according to claim 13 is characterized in that, when described first buffering area comprises silicon nitride, forms described undercut construction by the dry etching that utilizes fluorine base gas.
16. method according to claim 14 is characterized in that, when described first buffering area comprises silicon dioxide, forms described undercut construction by the wet etching operation after hydrophobic treatment.
17. method according to claim 15 is characterized in that, carries out simultaneously in second buffering area surface dry etching operation and hydrophobic treatment.
18. method according to claim 17 is characterized in that, first electrode surface keeps hydrophobic surface during hydrophobic treatment.
19. an organic elctroluminescent device comprises:
Substrate with a plurality of pixel regions;
Be positioned at first electrode on the substrate;
Be arranged in the organic electro luminescent layer on each pixel region first electrode;
Be formed at second electrode on the organic electro luminescent layer in each pixel region;
Be positioned at first buffering area on first electrode, described first buffering area is around the zone that forms the described organic electro luminescent layer and second electrode;
Be looped around second buffering area with truncated conical shape of the step part formation of first buffering area with cone shape;
By removing not the undercut construction that forms with overlapping part first buffering area of second buffering area, exposing first electrode, and on first electrode surface of described exposure, form first auxiliary electrode.
20. organic elctroluminescent device according to claim 19 is characterized in that, forms described first and second buffering areas in by the undercut construction zone of removing not the space that forms with overlapping part first buffering area of second buffering area.
21. organic elctroluminescent device according to claim 19 is characterized in that, one of them forms described first buffering area by silicon nitride and silicon dioxide.
22. organic elctroluminescent device according to claim 20 is characterized in that, the component ratio of the size of described undercut construction silane and ammonia when forming first buffering area and changing.
23. organic elctroluminescent device according to claim 22 is characterized in that, the consumption of ammonia is at least the twice of silane consumption.
24. organic elctroluminescent device according to claim 20 is characterized in that, the dry etching operation by using plasma forms described space.
25. a method that is used to make organic elctroluminescent device comprises:
Preparation has the substrate of pixel region;
On described substrate, form first electrode;
On first electrode except pixel region, form first buffering area;
Step part at first buffering area forms second buffering area to surround pixel region;
By not overlapping part first buffering area formation undercut construction of etching with second buffering area, to expose first electrode, and form first auxiliary electrode on first electrode surface of described exposure, wherein the stage portion that is looped around first buffering area with cone shape assigns to form second buffering area with truncated conical shape;
In pixel region, be formed with organic electroluminescent layer; And
On organic electro luminescent layer, form second electrode.
26. method according to claim 25, one of them forms described first buffering area by silicon nitride and silicon dioxide.
27. method according to claim 26 is characterized in that, described first buffering area is formed by silicon nitride, and using plasma is carried out etching work procedure.
28. method according to claim 26 is characterized in that, when described first buffering area was formed by silicon nitride, the consumption of ammonia was at least the twice of silane consumption in the process that forms first buffering area.
29. method according to claim 27 is characterized in that, the surface of second buffering area becomes hydrophobic and pixel region becomes hydrophobic in etching work procedure.
30. method according to claim 25 is characterized in that, forms described second buffering area to center on the zone that is formed with organic electro luminescent layer with the trap type.
31. method according to claim 25 is characterized in that, described organic electro luminescent layer is formed by macromolecular material.
32. method according to claim 31 is characterized in that, forms described macromolecular material by the solution casting method.
33. method according to claim 25 is characterized in that, inwardly forms at least one surface of described first buffering area greater than the gap of 0.1 μ m with described second buffering area of distance.
34. method according to claim 25 is characterized in that, described first and second buffering areas are formed by different materials.
35. method according to claim 26 is characterized in that, when described first buffering area is formed by silicon nitride, by adopting CF
4Dry etching form described undercut construction.
36. method according to claim 26 is characterized in that, when described first buffering area is formed by silicon dioxide, forms described undercut construction by the wet etching operation.
37. an organic elctroluminescent device comprises:
By preset distance first substrate separated from one another and second substrate;
Comprise the array element that is formed at least one thin-film transistor on first substrate in each sub-pixel;
Be formed at first electrode on second substrate;
Be arranged at first buffering area of the zone formation of each sub-pixel on first electrode in division;
Second buffering area that forms in the zone of the step part that comprises first buffering area;
By removing the undercut construction that forms with the second buffering area non-overlapping portions, first buffering area, to expose first electrode, and form first auxiliary electrode on first electrode surface of described exposure, wherein the stage portion that is looped around first buffering area with cone shape assigns to form second buffering area with truncated conical shape;
Be formed at the organic electro luminescent layer in each sub-pixel that centers on by second buffering area;
Be formed at second electrode on second substrate that is formed with organic electro luminescent layer;
Be used to be electrically connected the drain electrode of the thin-film transistor on first substrate and the conductive liner bedding and padding of second electrode on second substrate, correspond to each other at the thin-film transistor described in the described sub-pixel and second electrode.
38. according to the described organic elctroluminescent device of claim 37, it is characterized in that, described auxiliary electrode is the laminated construction that comprises first auxiliary electrode and second auxiliary electrode, described first auxiliary electrode directly contacts with first electrode, and described second auxiliary electrode forms with described second electrode.
39. a method that is used to make organic elctroluminescent device comprises:
On substrate, form first electrode;
On the substrate that is formed with first electrode, form first auxiliary electrode;
On except first electrode of pixel region, form first buffering area;
On the substrate that is formed with first buffering area, form second buffering area;
By etching and the second buffering area non-overlapping portions, first buffering area and described second buffering area is carried out hydrophobic treatment form resilient coating with undercut construction, to expose first electrode and first auxiliary electrode, described undercut construction assigns to form second buffering area with truncated conical shape with the stage portion that cone shape is looped around first buffering area;
By removing the undercut construction that forms with the second buffering area non-overlapping portions, first buffering area exposing first electrode, and on first electrode surface of described exposure, form first auxiliary electrode;
Have the resilient coating of first buffering area and second buffering area in formation after, in pixel region, be formed with organic electroluminescent layer; And
Thereby by forming conductive metal layer and on first auxiliary electrode, form second electrode and second auxiliary electrode being formed with on the substrate of organic electro luminescent layer.
40., it is characterized in that one of them forms described first buffering area by silicon nitride and silicon dioxide according to the described method of claim 39.
41., it is characterized in that when described first buffering area was formed by silicon nitride, using plasma was carried out etching work procedure according to the described method of claim 40.
42., it is characterized in that when described first buffering area was formed by silicon nitride, the consumption of ammonia was at least the twice of silane consumption according to the described method of claim 40.
43. according to the described method of claim 41, it is characterized in that, carry out in the surface treatment process buffering area at using plasma and become hydrophobic and subpixel area becomes hydrophobic.
44. according to the described method of claim 39, it is characterized in that, form described second buffering area to center on the zone that is formed with organic electro luminescent layer with the trap type.
45., it is characterized in that described organic electro luminescent layer is formed by macromolecular material according to the described method of claim 39.
46., it is characterized in that one of them is formed with organic electroluminescent layer to adopt jet ink process, vacuum moulding machine operation, roll banding operation, printing process and nozzle ejection operation according to the described method of claim 45.
47. according to the described method of claim 39, it is characterized in that, inwardly form at least one surface of first buffering area the described undercut construction with the gap of 0.1-3 μ m from second buffering area.
48., it is characterized in that described first and second buffering areas are formed by different materials according to the described method of claim 39.
49. according to the described method of claim 40, it is characterized in that, when described first buffering area is formed by silicon nitride, by carrying out CF with respect to second buffering area
4Hydrophobic treatment and the undercut construction that forms automatically.
50. according to the described method of claim 40, it is characterized in that, when described first buffering area is formed by silicon dioxide, form undercut construction by carrying out the wet etching operation separately for first buffering area zone.
Applications Claiming Priority (7)
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|---|---|---|---|
| KR1020040100627 | 2004-12-02 | ||
| KR20040100627 | 2004-12-02 | ||
| KR10-2004-0100627 | 2004-12-02 | ||
| KR10-2004-0115485 | 2004-12-29 | ||
| KR1020040115485 | 2004-12-29 | ||
| KR1020050087895 | 2005-09-21 | ||
| KR10-2005-0087895 | 2005-09-21 |
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| CN100421252C true CN100421252C (en) | 2008-09-24 |
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| KR101245217B1 (en) * | 2006-06-12 | 2013-03-19 | 엘지디스플레이 주식회사 | Light emitting device and fabrication method of the same |
| KR101274801B1 (en) * | 2006-06-27 | 2013-06-13 | 엘지디스플레이 주식회사 | A organic electro-luminescence display device and a method for fabricating the same |
| KR101274791B1 (en) * | 2006-06-29 | 2013-06-13 | 엘지디스플레이 주식회사 | Organic Electroluminescent Device and method for fabricating thereof |
| KR101256673B1 (en) | 2006-06-30 | 2013-04-19 | 엘지디스플레이 주식회사 | Organic light emitting device and method of manufacturing the organic light emitting device |
| KR101291845B1 (en) | 2006-12-13 | 2013-07-31 | 엘지디스플레이 주식회사 | Organic light emitting diodes display device and method of manufacturing the same |
| CN102723351B (en) * | 2011-03-29 | 2015-02-04 | 京东方科技集团股份有限公司 | OLED substrate, manufacturing method and display apparatus thereof |
| KR102004956B1 (en) | 2012-08-02 | 2019-07-30 | 삼성디스플레이 주식회사 | Display device |
| EP3175496B1 (en) * | 2014-08-01 | 2021-06-16 | Orthogonal Inc. | Photolithographic patterning of organic electronic devices |
| KR20180124911A (en) * | 2016-03-31 | 2018-11-21 | 다우 글로벌 테크놀로지스 엘엘씨 | Passive thin film transistor element |
| CN106469788B (en) * | 2016-08-31 | 2018-04-20 | 昆山工研院新型平板显示技术中心有限公司 | A kind of Organic Light Emitting Diode and preparation method thereof |
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