CN100523905C - System and method for providing thermal compensation for an interferometric modulator display - Google Patents

Abstract

Various embodiments of the invention relate to methods and systems for thermal compensation of a MEMS device. In certain embodiments, an interferometric modulator includes a first electrode and a flexible second electrode situated on a substrate. The flexible second electrode is a movable layer that can comprise aluminum or an aluminum-containing material, while the substrate can comprise glass. When the interferometric modulator undergoes a temperature change, the difference in thermal expansion rates results in a decrease in the tensile strain on the movable layer. Embodiments of the present invention provide a film configured to compensate for the thermal expansion. The film has a thermal expansion coefficient less than the substrate so as to compensate for expansion of the movable layer with respect to the substrate when the MEMS is exposed to thermal energy. The film compensates for mismatch in thermal expansion between the materials of the substrate and movable layer so as to inhibit undesirable optical characteristics.

Description

Be used to interferometric modulator display that the system and method for thermal compensation is provided

Technical field

The field of the invention relate to MEMS (micro electro mechanical system) (microelectromechanical system, MEMS).

Background technology

MEMS (micro electro mechanical system) (MEMS) comprises micromechanical component, activator appliance and electronic component.Can use deposition, etching and/or other etching remove substrate and/or deposited material layer part or add layer and produced micromechanical component with a micro fabrication that forms electric installation and electromechanical assembly.One type MEMS device is called interferometric modulator.As used herein, term interferometric modulator or interferometric light modulator refer to a kind of use principle of optical interference and optionally absorb and/or catoptrical device.In certain embodiments, interferometric modulator can comprise the pair of conductive plate, and one of them or both may be transparent in whole or in part and/or be had reflectivity, and can carry out relative motion when applying suitable electric signal.In a particular embodiment, a plate can comprise the fixed bed that is deposited on the substrate, and another plate can comprise the metallic film that is separated with fixed bed by air gap.As described in more detail, plate can change the optical interference that is incident on the light on the interferometric modulator with respect to the position of another plate.These devices have the application of wider range, and in this technology, utilize and/or revise these types of devices characteristic make its feature to be used to improve existing product and to create still undeveloped new product by excavation, will be useful.

Summary of the invention

System of the present invention, method and apparatus respectively have some aspects, and the attribute of its expectation all not only is responsible in wherein any single aspect.Under the situation that does not limit the scope of the invention, existing with its outstanding feature of brief discussion.Consider after this argumentation, and especially be entitled as after the part of " embodiment " in reading, to understand feature of the present invention how advantage will be provided, described advantage comprises (for example) a kind of interferometric modulator, and it uses thermal compensation film to increase drawing stress in the displaceable layers of the interferometric modulator that the mismatch owing to the expansion rate of substrate and displaceable layers causes.

One embodiment provides a kind of interferometric modulator, and it comprises first electrode and the flexible second electrode that is positioned on the substrate.Described flexible second electrode is the displaceable layers that can comprise aluminium or alumina-bearing material, and described substrate can comprise glass.When interferometric modulator experience temperature variation, the difference in thermal expansion rates of displaceable layers and substrate causes the tensile strain on the displaceable layers to reduce.This strain can weaken or destroy displaceable layers, thereby displaceable layers activates and lost efficacy when causing applying voltage on electrode.Therefore, need a kind of method of compensate for heat expansion difference so that reduce the strain on the displaceable layers and avoid the premature failure of interferometric modulator.

In certain embodiments, to comprise with first thermal expansivity be the substrate of feature in a kind of system that is used for the thermal compensation of MEMS (micro electro mechanical system) (MEMS) device.Described system further comprises the parts that are coupled to substrate and is feature and the displaceable layers that is coupled to described parts with second thermal expansivity.Described system further comprises film, and it is positioned to adjacent substrate and has the 3rd thermal expansivity less than first thermal expansivity, and wherein said film is configured to when the MEMS device is exposed to heat energy the compensation displaceable layers with respect to the expansion of substrate.

In certain embodiments, a kind of photomodulator comprises first electrode layer of substrate, substrate top and the second electrode lay of substrate top.Described photomodulator further comprises: support member, and it is coupled to substrate the second electrode lay and forms the chamber between first electrode layer and the second electrode lay; Reflecting surface, it is parallel to first electrode layer substantially and is coupled to the second electrode lay; And film, it is configured to cause drawing stress in response to the temperature that increases in the second electrode lay.

In certain embodiments, a kind of photomodulator comprises photomodulator supporting member, the first electrical signal conduction member and the second electrical signal conduction member.Described photomodulator further comprises: coupling component, and it is used for the photomodulator supporting member is coupled to the second electrical signal conduction member and forms the chamber between the first electrical signal conduction member and the second electrical signal conduction member; And light reflecting member, it is parallel to the first electrical signal conduction member substantially and is coupled to the second electrical signal conduction member.Described photomodulator further comprises drawing stress and causes member, and it is used for causing stress in response to the temperature that increases at the second electrical signal conduction member.

In certain embodiments, a kind of method of making photomodulator comprises: substrate is provided; Above substrate, form first electrode layer; With above substrate, form the second electrode lay.Described method further comprises: form the film that is configured to cause in the second electrode lay in response to the temperature that increases drawing stress; The support member of the second electrode lay is coupled to substrate in formation; With form the reflecting surface be parallel to first electrode layer substantially and be coupled to the second electrode lay, described reflecting surface can move along the direction perpendicular to described reflecting surface substantially.

In certain embodiments, the hot coefficient of a kind of method balance is to keep the tension force in the MEMS device with the substrate that separated by the chamber and displaceable layers.Described method comprises: select to have the material of first thermal expansivity as substrate; With the material of selecting to have second thermal expansivity based on described first thermal expansivity to small part as displaceable layers, keep the tension force in the displaceable layers when the MEMS device being exposed to the temperature of increase with box lunch.

In certain embodiments, the operation of a kind of method has the substrate that separated by the chamber and the interferometric modulator of displaceable layers, and described chamber is configured to cause the interference between at least two wavelength of electromagnetic radiation.Described method comprises: move displaceable layers towards substrate, described substrate has first thermal expansivity and described displaceable layers has second thermal expansivity, and described first coefficient is different from described second coefficient; With in displaceable layers, cause stress in response to the temperature that increases so that keep tension force in the displaceable layers.

In certain embodiments, the hot coefficient of a kind of method balance to be keeping the tension force in the interferometric modulator with the substrate that separated by the chamber and displaceable layers, and described chamber is configured to cause the interference between at least two wavelength of electromagnetic radiation.Described method comprises: select to have the material of first thermal expansivity as substrate; Selection has the material of second thermal expansivity as displaceable layers; With to small part based on described first thermal expansivity and described second thermal expansivity relatively select a film so that keep the tension force in the displaceable layers.

In certain embodiments, the hot coefficient of a kind of method balance is to keep the tension force in the MEMS device with the substrate that separated by the chamber and displaceable layers.Described method comprises: select the displaceable layers of a material as the MEMS device, described material is configured to be in tension force A under first temperature and be in tension force B under second temperature when time between the supporting construction that is suspended at the MEMS device, and wherein said tension force B is less than described tension force A; With the second layer of selecting a material as the MEMS device, described material has a thermal expansivity, and when displaceable layers was in second temperature, described thermal expansivity made displaceable layers maintain tension force A.

These and other embodiment of more detailed description hereinafter.

Description of drawings

Fig. 1 is the isometric view of a part of describing an embodiment of interferometric modulator display, and wherein the displaceable layers of first interferometric modulator is in slack position, and the displaceable layers of second interferometric modulator is in active position.

Fig. 2 is the system block diagram that an embodiment of the electronic installation that 3 * 3 interferometric modulator displays are arranged is incorporated in explanation into.

Fig. 3 is that the removable mirror position of an one exemplary embodiment of interferometric modulator of Fig. 1 is to the figure of applying voltage.

Fig. 4 is the explanation that can be used for driving one group of row and column voltage of interferometric modulator display.

An exemplary frame of the video data in 3 * 3 interferometric modulator displays of Fig. 5 A key diagram 2.

Fig. 5 B explanation can be used for writing the exemplary sequential chart of row and column signal of the frame of Fig. 5 A.

Fig. 6 A and 6B are the system block diagrams that the embodiment of the visual display unit that comprises a plurality of interferometric modulators is described.

Fig. 7 A is the xsect of the device of Fig. 1.

Fig. 7 B is the xsect of the alternate embodiment of interferometric modulator.

Fig. 7 C is the xsect of another alternate embodiment of interferometric modulator.

Fig. 7 D is the xsect of the another alternate embodiment of interferometric modulator.

Fig. 7 E is the xsect of the extra alternate embodiment of interferometric modulator.

Fig. 8 illustrative comprises having the specially interferometric modulator array of the displaceable layers of the pulling strengrth σ i of design.

Fig. 9 illustrative comprises displaceable layers with the pulling strengrth σ i that specially designs and the interferometric modulator array that further comprises the thermal compensation film that is deposited on the substrate.

Figure 10 provides and describes because thermal compensation film and because the thermal expansion of substrate, STRESS VARIATION is as the curve map of the function of temperature.

Figure 11 A is an xsect of incorporating the device of Fig. 1 that the thermal compensation film is arranged into.

Figure 11 B is an xsect of incorporating the alternate embodiment of the interferometric modulator that the thermal compensation film is arranged into.

Figure 11 C is an xsect of incorporating another alternate embodiment of the interferometric modulator that the thermal compensation film is arranged into.

Figure 11 D is an xsect of incorporating the another alternate embodiment of the interferometric modulator that the thermal compensation film is arranged into.

Figure 11 E is an xsect of incorporating the extra alternate embodiment of the interferometric modulator that the thermal compensation film is arranged into.

Figure 12 illustrative comprises that the thick chromium layer that is deposited on the glass substrate is as first electrode and the aluminium lamination interferometric modulator as flexible second electrode.

Embodiment

Below describe in detail at some specific embodiment of the present invention.Yet the present invention can implement by many different modes.Describe in the content referring to accompanying drawing at this, all same sections are represented with same numeral in the accompanying drawings.As will be understood from the following description, described embodiment may be implemented in any device that is configured to display image (no matter being that motion (for example, video) still fixing (for example, rest image) is no matter and be literal or picture).More particularly, expect that described embodiment may be implemented in the multiple electronic installation or related with multiple electronic installation, described multiple electronic installation is (but being not limited to) mobile phone for example, wireless device, personal digital assistant (PDA), portable or portable computer, gps receiver/omniselector, camera, the MP3 player, video camera, game console, wrist-watch, clock, counter, TV monitor, flat-panel monitor, computer monitor, automotive displays (for example, mileometer display etc.), driving cabin controller and/or display, the display of camera view (for example, the display of rear view camera in the vehicle), the electronics photograph, electronic bill-board or direction board, projector, building structure, packing and aesthetic structures (for example, the display of the image on jewelry).Have in the non-display application that MEMS device with the structure of the similar of describing herein also can be used for electronic switching device for example.

The embodiment of the invention provides the film of the thermal expansion that is configured to compensate the MEMS device.Described film is positioned to contiguous described substrate and has compensate the expansion of removable reflection horizon with respect to substrate when thermal expansivity less than described substrate is exposed to heat energy with box lunch with described MEMS.The mismatch of the thermal expansion between the material in described film compensation substrate and reflection horizon suppresses when with box lunch described MEMS being exposed to heat energy for example to activate and the appearance of undesirable optical characteristics such as transformation of release voltage and keep suitable electromechanical properties.

Explanation comprises the embodiment of an interferometric modulator display of interfere type MEMS display element among Fig. 1.In these devices, pixel is in bright state or dark state.Under bright (" connection " or " unlatching ") state, display element reflexes to the user with the major part of incident visible light.When in dark (" disconnection " or " closing ") state following time, display element reflexes to the user with few incident visible light.According to embodiment, can put upside down the light reflectance properties of " connection " and " disconnection " state.The MEMS pixel can be configured and mainly reflect with selected color, thereby allows the color except black and white to show.

Fig. 1 is an isometric view of describing two neighbors in a series of pixels of visual displays, and wherein each pixel comprises the MEMS interferometric modulator.In certain embodiments, interferometric modulator display comprises the delegation/column array of these interferometric modulators.Each interferometric modulator comprises a pair of reflection horizon, and it is positioned to each other variable and controllable distance apart, has at least one variable-sized resonant optical mode chamber with formation.In one embodiment, can move one of described reflection horizon between the two positions.In primary importance (being called slack position herein), removable reflection horizon is positioned at apart from the relatively large distance in fixed part reflection horizon.In the second place (being called active position herein), the more closely adjacent described partially reflecting layer in removable reflection horizon and locating.Interfere mutually longways or mutually from the incident light of described two layers reflection with disappearing the position in the removable reflection horizon of foundation, thereby produce the total reflection state or the non-reflective state of each pixel.

Institute's drawing section branch of pel array comprises two adjacent interferometric modulator 12a and 12b among Fig. 1.In the interferometric modulator 12a of left side, illustrate that removable reflection horizon 14a is in the slack position at the Optical stack 16a preset distance place that comprises partially reflecting layer.In the interferometric modulator 12b of right side, illustrate that removable reflection horizon 14b is in the active position that is adjacent to Optical stack 16b.

Usually comprise some fused layers (fusedlayer) as Optical stack 16a and 16b (being referred to as Optical stack 16) that this paper quoted, described fused layers can comprise the electrode layer of tin indium oxide (ITO) for example, the partially reflecting layer and the transparent dielectric of for example chromium.Therefore, Optical stack 16 be conduction, partially transparent and partial reflection, and can above-mentioned layer one or more depositing on the transparent substrates 20 be made by (for example).In certain embodiments, described layer is patterned to become a plurality of parallel strips, and as hereinafter further describing, can form column electrode in display device. Removable reflection horizon 14a, 14b can form the series of parallel bar (vertical with column electrode 16a, 16b) that is deposited on the institute's depositing metal layers (one or more layers) on the post 18 and be deposited on intervention expendable material between the post 18.When expendable material was removed in etching, removable reflection horizon 14a, 14b passed through the gap of being defined 19 and separate with Optical stack 16a, 16b.For example the material of the highly conductive of aluminium and reflection can be used for reflection horizon 14, and these can form the row electrode in display device.Other material that can be used for displaceable layers 14 comprises Ni and Cr.

Do not applying under the voltage condition, chamber 19 is retained between removable reflection horizon 14a and the Optical stack 16a, and wherein removable reflection horizon 14a is in the mechanical relaxation state, and is illustrated as pixel 12a among Fig. 1.Yet when potential difference (PD) was applied to selected row and column, the capacitor that is formed on the infall of the column electrode at respective pixel place and row electrode became charged, and electrostatic force is pulled in described electrode together.If voltage is enough high, so removable reflection horizon 14 deforms and is forced to against Optical stack 16.Dielectric layer (not shown in this figure) in the Optical stack 16 can prevent the separating distance between short circuit and key- course 14 and 16, and is illustrated as the pixel 12b on right side among Fig. 1.No matter the polarity of the potential difference (PD) that is applied how, show all identical.In this way, may command reflective pixel state is similar to employed row in conventional LCD and other display technique/row in many aspects and activates row/row activation of non-reflective pixel state.

Fig. 2 uses the exemplary processes and the system of interferometric modulator array in display application to Fig. 5 B explanation.

Fig. 2 is the system block diagram that explanation can be incorporated an embodiment of the electronic installation that each side of the present invention is arranged into.In described one exemplary embodiment, described electronic installation comprises processor 21, its can be any general purpose single-chip or multicore sheet microprocessor (for example ARM,

Pro, 8051,

), or any special microprocessor (for example digital signal processor, microcontroller), or programmable gate array.As way conventional in this technology, processor 21 can be configured to carry out one or more software modules.Except executive operating system, described processor can be configured to carry out one or more software applications, comprises web browser, telephony application, e-mail program or any other software application.

In one embodiment, processor 21 also is configured to be communicated with array driver 22.In one embodiment, described array driver 22 comprises row driver circuits 24 and the column driver circuit 26 that signal is provided to panel or display array (display) 30.The xsect that in Fig. 2, presents array illustrated in fig. 1 with line 1-1.For the MEMS interferometric modulator, OK/the row activated protocol can utilize the hysteresis characteristic of these devices illustrated in fig. 3.May need the potential difference (PD) of (for example) 10 volts to impel displaceable layers to be deformed into state of activation from relaxed state.Yet, when voltage when described value reduces, displaceable layers is kept its state when voltage drop is returned below 10 volts.In the one exemplary embodiment of Fig. 3, displaceable layers is just lax fully when voltage drops to below 2 volts.Therefore have about 3 to 7V voltage range in example illustrated in fig. 3, have the voltage window that applies in described scope, device all is stable in relaxed state or state of activation in described window.This window is referred to herein as " lag window " or " stability window ".For the array of display of hysteresis characteristic with Fig. 3, can design row/row activated protocol, make and to be expert at during the gating, gating capable in pixel to be activated be exposed to about 10 volts voltage difference, and pixel to be relaxed is exposed to the voltage difference that lies prostrate near zero.After gating, it is poor that described pixel is exposed to about 5 volts steady state voltage, makes it keep the gating of being expert at and make in its residing any state.In this example, each pixel experiences the potential difference (PD) in " stability window " of 3-7 volt after being written into.This feature makes pixel design illustrated in fig. 1 activate or lax being pre-stored in all is stable under the state identical apply under the voltage conditions.Because each pixel of interferometric modulator (activating or relaxed state no matter be in) is the capacitor that is formed by fixed reflector and mobile reflection horizon in essence, so can keep this steady state (SS) and almost inactivity consumption under the voltage in lag windwo.In essence, if the voltage that is applied is fixed, there is not electric current to flow in the pixel so in fact.

In the typical case uses, can produce display frame by establishing described group of row electrode according to required group activation pixel in first row.Then horizontal pulse is applied to row 1 electrode, thereby activates pixel corresponding to the alignment of being established.Then change described group and established the row electrode with corresponding to required group activation pixel in second row.Then pulse is applied to row 2 electrodes, thereby activates suitable pixel in the row 2 according to the row electrode of having established.Row 1 pixel is not influenced by row 2 pulses, and maintains in the state that its 1 impulse duration of being expert at is set.Can be in a continuous manner the row of whole series be repeated this process to produce frame.Usually, repeating this process continuously by the speed with a certain requisite number purpose of per second frame to refresh and/or upgrade described frame with new video data.The row and column electrode that is used to drive pel array also is well-known and can uses in conjunction with the present invention with the various protocols that produces display frame.

Fig. 4,5A and 5B explanation are used for forming a possible activated protocol of display frame on 3 * 3 arrays of Fig. 2.The possible one group of row and the row voltage level of the hysteresis curve that Fig. 4 explanation can be used for making pixel present Fig. 3.In Fig. 4 embodiment, activate pixel and relate to suitable row are set at-V _Bias, and will suitably go and be set at+△ V, its respectively can corresponding to-5 volts with+5 volts.Relax pixels is to be set at+V by will suitably being listed as _Bias, and will suitably go and be set at identical+△ V, realize thereby on pixel, produce zero volt potential difference (PD).The voltage of being expert at maintains in those row of zero volt, no matter row are in+V _BiasStill-V _Bias, pixel all is stable in its initial residing any state.Same as illustrated in fig. 4, will understand, can use the voltage that has with the opposite polarity polarity of above-mentioned voltage, for example, activate pixel and can relate to and being set at+V suitably being listed as _Bias, and will suitably go and be set at-△ V.In this embodiment, discharging pixel is to be set at-V by will suitably being listed as _Bias, and will suitably go and be set at identical-△ V, realize thereby on pixel, produce zero volt potential difference (PD).

Fig. 5 B is the sequential chart that presents a series of row and column signals of 3 * 3 arrays that are applied to Fig. 2, the row and column signal of described series will produce the display that illustrates among Fig. 5 A and arrange, the pixel that wherein is activated is non-reflection.Before the frame that illustrates in writing Fig. 5 A, pixel can be in any state, and in this example all the row all be in 0 volt, and all row all be in+5 volts.Under the voltage condition that these applied, all pixels all are stable in its existing activation or relaxed state.

In the frame of Fig. 5 A, pixel (1,1), (1,2), (2,2), (3,2) and (3,3) are activated.In order to realize this purpose, during be expert at 1 " line time (line time) ", row 1 and 2 are set at-5 volts, and row 3 are set at+5 volts.Because all pixels all are retained in the stability window of 3-7 volt, so this does not change the state of any pixel.Then use from 0 and be raised to 5 volts and return zero pulse gate capable 1.This has activated (1,1) and (1,2) pixel and lax (1,3) pixel.Other pixel is all unaffected in the array.In order to set row 2 as required, row 2 are set at-5 volts, and row 1 and 3 are set at+5 volts.The same strobe that is applied to row 2 then will activate pixel (2,2) and relax pixels (2,1) and (2,3).Equally, other pixel is all unaffected in the array.Set row 3 similarly by row 2 and 3 being set at-5 volts and row 1 are set at+5 volts.Row 3 strobe sets row 3 pixels are as shown in Fig. 5 A.After writing incoming frame, the row current potential is zero, and the row current potential can maintain+5 or-5 volts, and to follow display be stable in the layout of Fig. 5 A.To understand, same program can be used for the array of tens of or hundreds of row and columns.Also will understand, the sequential, sequence and the level that are used to carry out the voltage that row and column activates can extensively change in the General Principle of above being summarized, and example above only is exemplary, and any activation voltage method all can be used with system and method described herein.

Fig. 6 A and 6B are the system block diagrams of the embodiment of explanation display device 40.Display device 40 can be (for example) cellular phone or mobile phone.Yet the same components of display device 40 or its be also various types of display device of illustrative examples such as TV and portable electronic device of version a little.

Display device 40 comprises shell 41, display 30, antenna 43, loudspeaker 45, input media 48 and microphone 46.Usually forming shell 41 by in the well-known multiple manufacturing process of those skilled in the art (comprising injection moulding and vacuum forming) any one comprises.In addition, shell 41 can be made by in the multiple material any one, and described material includes, but is not limited to plastics, metal, glass, rubber and pottery, or its combination.In one embodiment, shell 41 comprises part that can be removed (not shown), and described part that can be removed can have different color with other or contain the not part that can be removed exchange of isolabeling, picture or symbol.

As described in this article, the display 30 of exemplary display device 40 can be any one in the multiple display that comprises bistable display (bi-stabledisplay).In other embodiments, well-known as the those skilled in the art, display 30 comprises the flat-panel monitor of for example aforesaid plasma, EL, OLED, STN LCD or TFT LCD, or the non-tablet display of CRT or other kinescope device for example.Yet for the purpose of describing present embodiment, as described in this article, display 30 comprises interferometric modulator display.

The assembly of illustrative exemplary display device 40 embodiment among Fig. 6 B.Illustrated exemplary display device 40 comprises shell 41, and can comprise to small part and be closed in additional assemblies in the described shell 41.For instance, in one embodiment, exemplary display device 40 comprises network interface 27, and described network interface 27 comprises the antenna 43 that is coupled to transceiver 47.Transceiver 47 is connected to processor 21, and processor 21 is connected to regulates hardware 52.Regulate hardware 52 and can be configured to conditioning signal (for example, signal being carried out filtering).Regulate hardware 52 and be connected to loudspeaker 45 and microphone 46.Processor 21 also is connected to input media 48 and driver controller 29.Driver controller 29 is coupled to frame buffer 28 and is coupled to array driver 22, described array driver 22 and then be coupled to array of display 30.According to particular exemplary display device 40 designing requirement, power supply 50 is provided to all component with electric power.

Network interface 27 comprises antenna 43 and transceiver 47, makes exemplary display device 40 to communicate by letter with one or more devices via network.In one embodiment, network interface 27 also can have some processing power to alleviate the requirement to processor 21.Antenna 43 is any antennas that known being used to of those skilled in the art transmits and receives signal.In one embodiment, described antenna transmits and receives the RF signal according to IEEE 802.11 standards (comprise IEE E802.11 (a) and (b) or (g)).In another embodiment, described antenna transmits and receives the RF signal according to the BLUETOOTH standard.Under the situation of cellular phone, described antenna is used for the known signal of communicating by letter through design to receive CDMA, GSM, AMPS or other in the wireless cellular telephone network network.Transceiver 47 pre-service make processor 21 can receive described signal and also further described signal are handled from the signal that antenna 43 receives.Transceiver 47 is also handled the signal that receives from processor 21, and making can be via antenna 43 from the described signal of exemplary display device 40 emissions.

In an alternate embodiment, transceiver 47 can be replaced by receiver.In another alternate embodiment, network interface 27 can be replaced by the image source that can store or produce the view data that is sent to processor 21.For instance, described image source can be digital video disk (DVD) or contains the hard disk drive of view data, or produces the software module of view data.

Processor 21 is whole operations of control exemplary display device 40 usually.Processor 21 for example receives the data from the compressed view data of network interface 27 or image source, and described data processing is become raw image data or is processed into the form that easily is processed into raw image data.The data that processor 21 then will have been handled send to driver controller 29 or send to frame buffer 28 for storage.Raw data typically refers to the information of the characteristics of image of each position in the recognition image.For instance, these picture characteristics can comprise color, saturation degree and gray level.

In one embodiment, processor 21 comprises the operation with control exemplary display device 40 of microcontroller, CPU or logical block.Regulate hardware 52 and generally include amplifier and wave filter, both are used for signal is transmitted into loudspeaker 45 for it, and are used for from microphone 46 received signals.Adjusting hardware 52 can be the discrete component in the exemplary display device 40, maybe can merge in processor 21 or other assembly.

Driver controller 29 is directly obtained the raw image data that is produced by processor 21 from processor 21 or from frame buffer 28, and suitably the described raw image data of reformatting arrives array driver 22 for high-speed transfer.Specifically, driver controller 29 is reformatted as the data stream with class raster format with raw image data, makes it have the chronological order that is suitable for scanning on display array 30.Then, driver controller 29 sends to array driver 22 with formatted information.Conduct integrated circuit (IC) independently can be implemented in numerous ways these controllers although driver controller 29 (for example lcd controller) is usually related with system processor 21.It can be used as in the hardware embedded processor 21, in software embedded processor 21, or is completely integrated in the hardware with array driver 22.

Usually, array driver 22 receives formatted information and video data is reformatted as one group of parallel waveform from driver controller 29, and described waveform repeatedly is applied to from the hundreds of and thousands of sometimes lead-in wires in the x-y picture element matrix of display with per second.

In one embodiment, driver controller 29, array driver 22 and display array 30 are applicable to the display of any type described herein.For instance, in one embodiment, driver controller 29 is conventional display controller or bistable display controller (for example, interferometric modulator controller).In another embodiment, array driver 22 is conventional driver or bi-stable display driver (for example, interferometric modulator display).In one embodiment, driver controller 29 is integrated with array driver 22.This embodiment is general in the height integrated system of for example cellular phone, wrist-watch and other small-area display.In another embodiment, display array 30 is typical display array or bi-stable display array (display that for example, comprises interferometric modulator array).

Input media 48 allows the user to control the operation of exemplary display device 40.In one embodiment, input media 48 comprises keypad, button, switch, touch sensitive screen, the pressure-sensitive or thermosensitive film of qwerty keyboard for example or telephone keypad.In one embodiment, microphone 46 is the input medias that are used for exemplary display device 40.When using microphone 46 to enter data into described device, the user can provide voice command so that the operation of control exemplary display device 40.

Power supply 50 can comprise well-known multiple energy storing device in this technology.For instance, in one embodiment, power supply 50 is rechargeable batteries of nickel-cadmium battery or lithium ion battery for example.In another embodiment, power supply 50 is regenerative resource, capacitor or solar cell, comprises plastic solar cell and solar cell coating.In another embodiment, power supply 50 is configured to receive electric power from wall outlet.

In certain embodiments, as mentioned described in, control programmability reside in the driver controller, it can be arranged in some positions of electronic display system.In some cases, the control programmability resides in the array driver 22.Be understood by those skilled in the art that above-mentioned optimization may be implemented in the hardware of any number and/or the component software and can various configurations implement.

Details according to the structure of the interferometric modulator operated of principle of above statement can extensively change.For instance, Fig. 7 A-7E illustrates five different embodiment of removable reflection horizon 14 and supporting construction thereof.Fig. 7 A is the xsect of the embodiment of Fig. 1, and wherein strip of metal material 14 is deposited on vertically extending support member or the post 18.In Fig. 7 B, removable reflection horizon 14 only is attached to support member 18 at the corner place on tethers (tether) 32.In Fig. 7 C, removable reflection horizon 14 is folded down from the deformable layer 34 that can comprise the flexible metal.Described deformable layer 34 is connected to substrate 20 directly or indirectly around the periphery of deformable layer 34.These connections are referred to herein as supporting construction or post 18.The embodiment that illustrates among Fig. 7 D has post plugs 42, and deformable layer 34 is shelved on the described post plugs 42.Shown in Fig. 7 A-7C, removable reflection horizon 14 keeps being suspended at the top, chamber, but deformable layer 34 does not form described pillar 18 by the hole of filling between deformable layer 34 and the Optical stack 16.But pillar 18 comprises the smoothing material that is used to form post plugs 42.The embodiment that illustrates among Fig. 7 E is based on the embodiment that presents among Fig. 7 D, but any one and not shown extra embodiment among the embodiment that also can be suitable for illustrating in Fig. 7 A-7C play a role.In the embodiment shown in Fig. 7 E, used the additional layer of metal or other conductive material to form bus structure 44.This allows signal to carry out route along the back side of interferometric modulator, thereby eliminates the possible electrode that must be formed on the substrate 20 of many scripts.

In the embodiment of for example embodiment of those shown in Fig. 7, interferometric modulator serves as the direct viewing device, wherein watches image from the front side of transparent substrates 20, described side with above to be furnished with a side of modulator relative.In these embodiments, reflection horizon 14 is covered the some parts of interferometric modulator in that side relative with substrate 20 in reflection horizon with optical mode, and it comprises deformable layer 34 and bus structure 44.This permission is configured and operates shaded areas and can not influence picture quality negatively.This separable modulator structure allows to select to be used for the structural design of the dynamo-electric aspect of modulator and optics aspect and material and it is played a role independently of one another.In addition, the embodiment shown in Fig. 7 C-7E has the additional benefit that the optical property that is derived from reflection horizon 14 and its engineering properties break away from, and described disengaging is carried out by deformable layer 34.This structural design and material that allows to be used for reflection horizon 14 is able to optimization aspect optical characteristics, and is used for the structural design of deformable layer 34 and material is being able to optimization aspect the engineering properties of expectation.

Return referring to Fig. 1, make displaceable layers 14 and make that it is under the drawing stress under off-state, and therefore be parallel to transparent substrates 20.As mentioned above, substrate 20 can comprise for example material of glass, silicon, plastics, Mai La, quartz or analog.These substrate 20 materials can be lower than displaceable layers 14 thermal expansion rates speed and through expanded by heating, displaceable layers 14 can comprise for example metal of aluminium.Enumerate multiple material coefficient of thermal expansion speed in the table 1.

Table 1

Material	Expansion rate (10 -5in/in/℃)	Temperature
			Crown glass	1.3-1.4	Room temperature
Flint glass	1.5	Room temperature
			Pyroceram,	0.3	Room temperature
Aluminium and alloy thereof	2.1-2.5	100-390℃
			Silver	2.0	100-390℃
The Cr-Ni-Fe superalloy	1.7-1.9	540-980℃
			Heat-resisting alloy (foundry goods)	1.1-1.9	540-980℃
Copper	1.4-1.8	100-390℃
			Nickel based super alloy	1.8	540-980℃
Cobalt-base superalloy	1.2-1.7	540-980℃
			Beryllium copper	1.7	100-390℃
Copper nickel and nickeline	1.6-1.7	100-390℃
			Nickel and alloy thereof	1.2-1.7	540-980℃
The Cr-Ni-Co-Fe superalloy	1.4-1.6	540-980℃
			Gold	1.4	100-390℃
Its alloy of titanium ﹠	0.9-1.3	540-980℃
			Cobalt	1.2	540-980℃
Palladium	1.2	100-390℃
			Beryllium	1.1	Room temperature
Thorium	1.1	Room temperature
			Beryllium carbide	1.0	540-980℃
The low bulk nickel alloy	0.3-1.0	100-390℃
			Molybdenum disilicide	0.9	100-390℃
Ruthenium	0.9	Room temperature

Platinum	0.9	100-390℃
			Vanadium	0.9	Room temperature
Rhodium	0.8	Room temperature
			Tantalum carbide	0.8	540-980℃
Boron nitride	0.8	540-980℃
			Titanium carbide	0.7	540-980℃
Iridium	0.7	Room temperature
			Zirconium carbide	0.7	540-980℃
Osmium and tantalum	0.6	Room temperature
			Zirconium and alloy thereof	0.6	Room temperature
Hafnium	0.6	Room temperature
			Zirconia	0.6	1205-1580℃
Molybdenum and alloy thereof	0.5-0.6	Room temperature
			Silit	0.39-.4	1205-1580℃
Tungsten	0.4	Room temperature
			Electroceramics	0.4	100-390℃
Zircon	0.2-0.3	100-390℃
			Boron carbide	0.3	1205-1580℃
Carbon and graphite	0.2-0.3	100-390℃

Thermal expansion mismatch between substrate 20 and the displaceable layers 14 can cause the drawing stress in the displaceable layers 14 to increase or reduce.When the MEMS device is exposed to heat energy, increase or the drawing stress that reduces can change the operating characteristics of MEMS device.For the compensate for heat expansion mismatch, use the thermal compensation film.

The drawing stress that interferometric modulator array relies in the displaceable layers 14 is kept mechanical rigid, keeps the suitable electromechanical properties of interferometric modulator whereby.All material is all varying sized along with temperature variation, comprises in main material layer, glass substrate 20 and the displaceable layers 14 in the interferometric modulator.Along with temperature increases the common scope that experiences of interferometric modulator that surpasses in the device, the stress that difference caused of the thermal expansivity between substrate 20 and the displaceable layers 14 can affect greatly the electromechanical properties of interferometric modulator.The described influence itself can show as the activation of interferometric modulator and the transformation of release voltage.

Though glass substrate 20 can and expand along with the temperature rising, the thermal expansivity of displaceable layers 14 may be bigger.In addition, laterally free expansion of displaceable layers 14, thus cause along with temperature rising compression stress increases.This compression stress reduces the designed drawing stress that enters in the displaceable layers 14, thereby changes the interferometric modulator performance, in order to offset this effect, preferably adds the thermal compensation film to interferometric modulator.In certain embodiments, the thermal compensation film can be positioned on substrate 20 belows, above substrate 20, or is embedded in the substrate 20.For instance, the thermal compensation film can be positioned on 19 tops, chamber and contiguous displaceable layers 14.

In certain embodiments, the thermal compensation film comprises the material that presents low, zero or negative expansion.Use these materials to help to control thermal expansion, and the particular thermal that can allow material is designed to have the value between the value of the single component of compound expand.The thermal expansion matching that makes apparatus parts for avoid between two assemblies at the interface to break or separate also to be desirable, and when the electronics in the device or optical module will accurately be located, need minimum the expansion.

Film with negative expansion coefficient increases along with temperature and shrinks.In certain embodiments, use the negative coefficient film to make substrate 20 " bending ", be attached to drawing stress in the mechanical membrane of substrate 20 thereby increase via post 18.

Fig. 8 is depicted in the xsect of interferometric modulator array under the design temperature.Described interferometric modulator array comprises having the specially drawing stress σ of design _iDisplaceable layers 14.Along with temperature increases, substrate 20 and displaceable layers 14 expand.Yet the thermal expansivity of displaceable layers 14 is greater than the thermal expansivity of substrate 20.Because displaceable layers 14 is anchored on support member or post 18 places, so the displaceable layers 14 between the post 18 expands and reduces drawing stress effectively.Also describe chamber 19 among Fig. 8.

Can compensate this effect on the substrate 20 by thermal compensation film 900 is deposited on, illustrated as Fig. 9.Thermal compensation film 900 can have low or negative thermal expansivity.Along with temperature increases, the degree that the degree that thermal compensation film 900 expands expands less than substrate 20, thus make substrate 20 crooked slightly and bestow drawing stress to displaceable layers 14.Embodiment with thermal compensation film 900 of negative expansion coefficient (NTE) increases along with temperature and shrinks, thereby makes substrate 20 slight curvatures and bestow drawing stress to displaceable layers 14.This has offset reducing of the stress that causes owing to its thermal expansion in the displaceable layers 14.Also describe chamber 19 and supporting construction or post 18 among Fig. 9.

The thermal expansion of thermal compensation film 900 and substrate 20 is producing strain at the interface, thereby produces stress in substrate and thermal compensation film 900.Stress in the substrate 20 can be estimated by equation 1:

σ _F=(E _F/ (1-v _F)) (α _S-α _NTE) (T-300) equation 1

σ wherein _fBe the stress in the thermal compensation film 900 at the interface, Ef is the module of elasticity of thermal compensation film 900, v _fBe the Poisson ratio of film, α is a thermal expansivity, and T is temperature (K).Table 2 is enumerated the value of a kind of exemplary materials Corning 1737F that can buy from the Corning of the Corning that is positioned at New York.These values can be used for the function of the drawing stress of accounting temperature initiation as the temperature of described exemplary materials.This insertion can be used to estimate that the stress that is caused will make the well-known expression formula of substrate 20 crooked much degree, in the Stoney equation.

$\mathrm{\ρ}=\frac{{\stackrel{\‾}{E}}_s{h}_s^2}{{6\mathrm{\σ}}_m{h}_f}$

Wherein ρ is a radius-of-curvature, E _sBe the twin shaft modulus of substrate, h _sAnd h _fBe substrate and film thickness, and σ _mBe stress at the interface.

This bending applies drawing stress to displaceable layers 14, thus the thermal expansion mismatch between compensation displaceable layers 14 and the substrate 20.Describe counter stress and temperature curve among Figure 10.

Table 2

Symbol	Definition	Value	Unit
				σ f	Stress in the substrate	---	Pa
Es	The module of elasticity of substrate	7.09E+10	Pa
				v f	The Poisson ratio of film	0.24	---
α	Thermal expansivity (Corning 1737F)	3.76E-06	1/K
				T	Temperature (K)	---	K

Have than substrate 20 among the embodiment of higher thermal expansion in displaceable layers 14, low, zero or negative thermal compensation film 900 can on the top of displaceable layers 14 and/or at least a portion in the bottom-exposed surface, form one deck.Higher thermal expansion with thermal compensation film 900 compensation displaceable layers of the thermal expansion lower than the thermal expansion of displaceable layers 14.Can select thermal compensation film 900 to provide enough temperature compensations, make displaceable layers 14 and substrate 20 present identical or similar thermal expansion, minimize or eliminate the tensile strain in the displaceable layers 14 whereby to displaceable layers 14.

Material with the low-thermal-expansion that is fit to use comprises invar, lithium aluminium silicate (LAS), and NaZr ₂P ₃O ₁₂(NZP) material family.Suitable material as thermal compensation film 900 comprises negative expansion (NTE) material.Suitable NTE material can experience isotropy and/or the linear negative expansion in the large-temperature range that comprises room temperature, can obtain from cheap commercially available presoma, and is easy to preparation.Heating power stability in the big temperature and pressure scope also is desirable characteristic.Thermal compensation film 900 does not also preferably under low pressure experience phase transformation.The example of suitable thermal compensation film 900 comprises Sc ₂W ₃O ₁₂Material family, ZrV ₂O ₇Material family, and ZrW ₂O ₈Material family.For instance, ZrW ₂O ₈In wide temperature range, present isotropy and shrink, and be used to prevent the expansion of optical fiber grid.M.S.Sutton, described in detail based on ZrW among the Journal of Microelectromechanical Systems of the 13rd volume for the 4th phase August in 2004 ₂O ₈Film, the content of described publication is incorporated herein by reference and in this part as this instructions at this in full.

As the isotropic material of thermal compensation film 900 with low or negative expansion coefficient (that is, experience during temperature variation in all dimensions the material of contraction or expansion similarly) additional examples comprise ZrP ₂O ₇ZrP ₂O ₇The normal heat that represents up to about 290 ℃ (undergoing phase transition under this temperature) expands, and represents the low-down and positive thermal expansion more than 290 ℃.A ₂(MO ₄) ₃Also can show negative expansion, for example Sc mutually ₂(WO ₄) ₃, it represents 10K to the cumulative volume contraction of 800K at least.

Thermal compensation film 900 can be partially transparent at least or opaque to small part.For passing the interferometric modulator that thermal compensation film 900 is inspected, described film is preferably partially transparent at least.For instance, the thermal compensation film 900 with negative expansion coefficient comprises glass ceramics.Glass ceramics can be buied from the OharaCorporation of California Rancho Santa Margarita.These length of material and volume increase along with temperature and reduce and expansion when cooling.NEX-I in these materials show module of elasticity, 0.14 Poisson ratio and 2.38 the proportion (g/cc) of-76 thermal expansivity CTE PPM/ ℃ (40 ℃ to 80 ℃), 27 GPa.99.3% high internal transmission rate (thickness 10mm) when the NEX-C material shows module of elasticity, 0.2 Poisson ratio, 280 Vickers hardness, 2.57 the proportion (g/cc) of-20 thermal expansivity CTE PPM/ ℃ (40 ℃ to 80 ℃), 94 GPa and 1570nm.These glass ceramics to be selling up to the size of 100 * 60 * 20mm, thereby make in its interferometric modulator that is suitable for being adapted at the size used in the various displays.

In one embodiment, thermal compensation film 900 is in order to eliminate or to minimize displaceable layers 14 and substrate 20 in any difference aspect the thermal expansion, makes temperature variation can not cause that drawing stress reduces in the displaceable layers 14 owing to the cause of the expansion rate difference of displaceable layers 14 and substrate 20.Can select the expansion of thermal compensation film 900 with control substrate 20, the stress that makes substrate 20 bestow displaceable layers 14 is kept the drawing stress of displaceable layers 14.

The thermal compensation film 900 that is used to revise the thermal expansion of substrate 20 can have any suitable configuration.The configuration of interferometric modulator can influence the configuration of thermal compensation film 900.

Figure 11 A is an xsect of incorporating the device of Fig. 1 that thermal compensation film 900 is arranged below substrate 20 into.Figure 11 B is above the substrate 20 and incorporate the xsect of the alternate embodiment of the interferometric modulator that thermal compensation film 900 is arranged into below Optical stack 16.Figure 11 C is above the substrate 20 and incorporate the xsect of another alternate embodiment of the interferometric modulator that thermal compensation film 900 is arranged into below Optical stack 16.Figure 11 D is an xsect of incorporating the another alternate embodiment of the interferometric modulator that thermal compensation film 900 is arranged below substrate 20 into.Figure 11 E is an xsect of incorporating the extra alternate embodiment of the interferometric modulator that thermal compensation film 900 is arranged below substrate 20 into.In the version of these embodiment, thermal compensation film 900 is positioned at substrate 20 tops or is embedded in the substrate 20.For instance, the thermal compensation film can be positioned on 19 tops, chamber and contiguous displaceable layers 14.

In 11E, interferometric modulator comprises glass substrate 20, as thin tin indium oxide (ITO) layer and the chromium layer of the part of Optical stack 16 at Figure 11 A, reaches displaceable layers 14.In operation, sedimentary deposit is inspected through design in the chamber 19 of interferometric modulator to pass glass substrate 20.Because pass substrate 20 checking device displays,, thermal compensation film 900 can not stop inspecting of chamber 19, below so being configured.For instance, that thermal compensation film 900 can be is transparent, have grid, or confines around array.In the interferometric modulator with this configuration (device that comprises Figure 11 A), thermal compensation film 900 comprises the temperature compensation material layer, and it covers inspecting the zone and attached to substrate 20 belows, describing to 11E as Figure 11 A of interferometric modulator.

Perhaps, thermal compensation film 900 can take to adhere to, in conjunction with or be deposited on substrate 20 tops or be incorporated into the form of grid, grid or perforated sheet in 20 layers of the substrates itself.If thermal compensation film 900 is optically transparent, so its can (for example) as substrate 20 itself, it can have the compound substrate 20 of the thermal expansion character of expectation with another combination of materials with formation, or it can adhere to, be deposited on the substrate 20 or is attached to substrate 20 has the thermal expansion character of expectation with formation structure.

Now referring to Figure 12, with the interferometric modulator of another embodiment of xsect schematic depiction.Described interferometric modulator comprises glass substrate 20, thick chromium layer 1202, insulation course 1204, displaceable layers 14, the second thin chromium optical layers 1206, and transparent electrode layer (for example, tin indium oxide (ITO)) 1210.In operation, the optics cavity 19 of interferometric modulator is inspected sedimentary deposit through design to pass protective clear layer 1208, rather than passes glass substrate 20.When displaceable layers 14 moved up or down, chamber 19 changed, and this has changed the interference pattern of interferometric modulator.For instance, displaceable layers 14 can first or slack position and active position between under dual mode, move.Long mutually or interfere mutually from the incident light of interferometric modulator reflection according to the position of displaceable layers 14 with disappearing, thus the total reflection or the non-reflective state of interferometric modulator produced.

Because be not to pass substrate 20 to inspect optics cavity 19 in the interferometric modulator that Figure 12 describes, so may realize the bigger dirigibility of the design of the thermal compensation film 900 that uses with substrate 20.For instance, has the substrate 20 that can be used as interferometric modulator with the non-transparent material through the thermal expansion of finishing of the thermal expansion matching of displaceable layers 14.These materials can comprise and have than the much smaller thermal expansion of the thermal expansion of substrate 20 or have the compound of two kinds of (or two or more) materials of negative expansion coefficient.

If thermal compensation film 900 uses with protective seam 1208, consider to be suitable for to the inspecting of unit describe of 11E so as about Figure 11 A.Yet, because the major part of protective seam 1208 is positioned at the surface of the below layer that comprises displaceable layers 14, so because the contribution that the drawing stress in 1208 pairs of displaceable layers 14 of cause protective seam of thermal dilation difference is made expection is minimum.Therefore, the thermal compensation of protective seam 1208 may be unnecessary.

Though above embodiment presents, describes and point out to be applied to the novel feature of the present invention of various embodiment, but will understand, the those skilled in the art can be in the various omissions on form of carrying out illustrated device or method under the situation that does not break away from spirit of the present invention and the details, alternative and variation.As understanding, some embodiment can be implemented in the form that feature that all this paper states and benefit are not provided, because some features may be used separately or put into practice with further feature.

Claims (56)

1. system that is used for the thermal compensation of a MEMS devices, described system comprises:

One is the substrate of feature with one first thermal expansivity;

Be coupled at least two parts of described substrate, described parts are separated by a space;

One is feature and the displaceable layers that is coupled to described at least two parts with second thermal expansivity; With

One film, its contiguous described substrate and locate and have one the 3rd thermal expansivity, described film are below the described space between described two parts and cross described space and extend,

Wherein said film is configured to compensate the expansion of described displaceable layers with respect to described substrate when described MEMS devices is exposed to heat energy.

2. system according to claim 1, wherein said film is positioned at described substrate below.

3. system according to claim 1, wherein said film is positioned at described substrate top.

4. system according to claim 1, wherein said film is embedded in the described substrate.

5. system according to claim 1, it further comprises a chamber between described substrate and described displaceable layers, with a reflecting surface part, described reflecting surface part can move between a primary importance and a second place, described primary importance is apart from described substrate one first distance, and the described second place is apart from described substrate one second distance.

6. system according to claim 1, wherein said film comprises Rhometal.

7. system according to claim 1, wherein said film comprises lithium aluminium silicate (LAS).

8. system according to claim 1, wherein said the 3rd thermal expansivity is less than described second thermal expansivity.

9. system according to claim 1, wherein said film comprises a material with a low thermal coefficient of expansion.

10. system according to claim 1, wherein said film comprises a material with a negative expansion coefficient.

11. system according to claim 1, wherein said film is a partially transparent at least.

12. system according to claim 1, wherein said film is opaque to small part.

13. system according to claim 1, it further comprises:

One processor, itself and described displaceable layers electric connection, wherein said processor is configured to image data processing; With

One storage arrangement, itself and described processor electric connection.

14. system according to claim 13, it further comprises a drive circuit, and described drive circuit is configured at least one signal is sent to described displaceable layers.

15. system according to claim 14, it further comprises a controller, and described controller is configured at least a portion of described view data is sent to described drive circuit.

16. system according to claim 13, it further comprises an image source module, and described image source module is configured to described image data transmission to described processor.

17. system according to claim 16, wherein said image source module comprises at least one in a receiver, transceiver and the transmitter.

18. system according to claim 13, it further comprises an input media, and described input media is configured to receive the input data and described input data are sent to described processor.

19. a system that comprises a photomodulator, described photomodulator comprises:

One substrate;

One first electrode layer above described substrate;

One the second electrode lay above described substrate;

One support member, it is coupled to described the second electrode lay with described substrate and forms a chamber between described first electrode layer and described the second electrode lay;

One reflecting surface, it is parallel to described first electrode layer substantially and is coupled to described the second electrode lay; With

One film, it is configured to cause drawing stress in response to the temperature that increases in described the second electrode lay.

20. system according to claim 19, wherein said substrate comprises a material that presents one first thermal expansivity, and described film presents one second thermal expansivity, and wherein said first thermal expansivity is greater than described second thermal expansivity.

21. system according to claim 19, wherein said film comprises Rhometal.

22. system according to claim 19, wherein said film comprises lithium aluminium silicate (LAS).

23. system according to claim 19, wherein said film comprises a material with a low thermal coefficient of expansion.

24. system according to claim 19, wherein said film comprises a material with a negative expansion coefficient.

25. system according to claim 19, wherein said film comprises a material with a thermal expansivity lower than described the second electrode lay.

26. system according to claim 19, wherein said film comprises a material with a thermal expansivity lower than described substrate.

27. system according to claim 19, it further comprises:

At least one electric connection in one processor, itself and described first and second electrodes, described processor is configured to image data processing;

One storage arrangement, itself and described processor electric connection.

28. system according to claim 27, it further comprises a drive circuit, and described drive circuit is configured at least one signal is sent in described first and second electrodes at least one.

29. system according to claim 28, it further comprises a controller, and described controller is configured at least a portion of described view data is sent to described drive circuit.

30. system according to claim 27, it further comprises an image source module, and described image source module is configured to described image data transmission to described processor.

31. system according to claim 30, wherein said image source module comprises at least one in a receiver, transceiver and the transmitter.

32. system according to claim 27, it further comprises an input media, and described input media is configured to receive the input data and described input data are sent to described processor.

33. a photomodulator, it comprises:

The first electrical signal conduction member, it is used to conduct one first electric signal;

The second electrical signal conduction member, it is used to conduct one second electric signal;

Supporting member, it is used to support the described first and second electrical signal conduction members;

Coupling component, it is used for described supporting member being coupled to the described second electrical signal conduction member and forming a chamber between described first electrical signal conduction member and the described second electrical signal conduction member;

Be used for catoptrical light reflecting member, described light reflecting member is parallel to the described first electrical signal conduction member substantially and is coupled to the described second electrical signal conduction member; With

Drawing stress causes member, and it is used for causing stress in response to the temperature that increases at the described second electrical signal conduction member.

34. photomodulator according to claim 33, wherein said chamber are configured to cause the interference between one at least two wavelength of electromagnetic radiation.

35. causing member, photomodulator according to claim 33, wherein said drawing stress be positioned at described supporting member below.

36. causing member, photomodulator according to claim 33, wherein said drawing stress comprise a layer with a thermal expansivity littler than a thermal expansivity of the described second electrical signal conduction member.

37. photomodulator according to claim 33, wherein said drawing stress cause member and comprise Rhometal.

38. causing member, photomodulator according to claim 33, wherein said drawing stress be positioned at described supporting member top.

39. photomodulator according to claim 33, wherein said drawing stress cause member and are embedded in the described supporting member.

40. photomodulator according to claim 33, wherein said drawing stress cause member and comprise lithium aluminium silicate (LAS).

41. causing member, photomodulator according to claim 33, wherein said drawing stress comprise a material with a low thermal coefficient of expansion.

42. causing member, photomodulator according to claim 33, wherein said drawing stress comprise a material with a negative expansion coefficient.

43. it is partially transparent at least that photomodulator according to claim 33, wherein said drawing stress cause member.

44. photomodulator according to claim 33, it is opaque to small part that wherein said drawing stress causes member.

45. photomodulator according to claim 33, wherein said supporting member are substrates.

46. photomodulator according to claim 33, the wherein said first electrical signal conduction member is an electrode layer.

47. photomodulator according to claim 33, the wherein said second electrical signal conduction member is an electrode layer.

48. photomodulator according to claim 33, wherein said coupling component are posts.

49. photomodulator according to claim 33, wherein said light reflecting member are one to be coupled to the reflecting surface of the described second electrical signal conduction member.

50. a method of making a MEMS (micro electro mechanical system) (MEMS) device, it comprises:

One substrate is provided;

Above described substrate, form one first electrode layer;

Above described substrate, form a second electrode lay;

Formation one is configured to cause in described the second electrode lay in response to the temperature that increases the film of drawing stress;

Formation one is connected to described substrate the support member of described the second electrode lay; With

Form one and be parallel to described first electrode layer substantially and be coupled to the reflecting surface of described the second electrode lay, described reflecting surface can move perpendicular to the direction of described reflecting surface substantially along one.

51. according to the described method of claim 50, wherein said film is embedded in the described substrate.

52. according to the described method of claim 50, wherein said film has the shape of a grid.

53. according to the described method of claim 50, wherein said film comprises a material with a low thermal coefficient of expansion.

54. according to the described method of claim 50, wherein said film comprises a material with a negative expansion coefficient.

55. according to the described method of claim 50, wherein said film is positioned at described substrate top.

56. according to the described method of claim 50, wherein said film is positioned at described substrate below.

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