CN100534712C - Method and structure for chemical-mechanical polishing of aluminium - Google Patents
Method and structure for chemical-mechanical polishing of aluminium Download PDFInfo
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- CN100534712C CN100534712C CNB2004100185644A CN200410018564A CN100534712C CN 100534712 C CN100534712 C CN 100534712C CN B2004100185644 A CNB2004100185644 A CN B2004100185644A CN 200410018564 A CN200410018564 A CN 200410018564A CN 100534712 C CN100534712 C CN 100534712C
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Abstract
This invention relates to a method for chemical-mechanical polishing mirror structure, which comprises the following steps: a) providing a semi-conductor substrate, such as silicon crystal circle; b) forming the first dielectric layer covering on the substrate, and forming an aluminum layer covering on the substrate; wherein the aluminum layer has a RMS intended roughness above 20 angstrom; c) patterning the aluminum layer to expose part of the dielectric layer; d) forming the second dielectric layer covering on the patterned aluminum layer and the exposed dielectric layer; removing part of the second dielectric layer; e) processing the area on the patterned aluminum layer by luster buffing technology, decreasing the surface roughness below 5 angstrom and removing the relict dielectric on the patterned aluminum, then forming mirror plane in the patterned aluminum.
Description
Technical field
Relate generally to integrated circuit of the present invention and the integrated circuit processing method of making electronic device.More particularly, the present invention relates to be used to make the method for the electrode structure of liquid crystal over silicon (LCOS) device as display.
Background technology
Relate generally to integrated circuit of the present invention and the integrated circuit processing method of making electronic device.More particularly, the invention provides a kind of method that is used to make the electrode structure of liquid crystal over silicon (LCOS) device as display.But will be appreciated that the present invention has the more wide in range scope of application.
In recent years, electronic display technology is developed rapidly.In the traditional tv in early days, cathode ray tube technologies (so-called CRT) outputs to selected pixel on the glass screen.These television sets are exported black and white at first and are moved image.Very fast color TV has replaced whole or most black and white television sets.Although CRT is very successful, CRT is very heavy usually, is difficult to accomplish very big and other restriction in addition.
CRT is very fast to be replaced by liquid crystal flat panel display or replaces to small part.These liquid crystal flat panel displays (so-called LCD) use the array of transistor elements that is coupled to liquid crystal material and coloured filter to export colored mobile image.Many terminals and less display device often use LCD output video, text and other visual signature.Regrettably, liquid crystal flat-panel has low yield rate usually and is difficult to accomplish in proportion very large scale.These LCD are unsuitable for usually as often being needed big displays such as TV.
Therefore, developed projection display unit.These projection display units also comprise pairing (counterpart) LCD inter alia, and it outputs to light on the big display to produce mobile image, text and other visual pattern from selected pixel scioptics.Another kind of technology is called " digital light handle (Digital Light Processing, DLP) ", and it is the trade name of TIX (TI).DLP is used to be called " micro mirror (micro-mirror) " usually.DLP relies on hundreds thousand of small mirrors, and these small mirrors are lined up 800 row, and every row has 600 mirrors.Each mirror all is equipped with rotating shaft.A brake is installed in each rotating shaft.This brake has electrostatic energy usually, and it can be with high frequency around axle each mirror that tilts.Movable mirror can light modulated, and modulated light can transmit by scioptics, and is presented on the display screen subsequently.Although DLP is very successful, it is very low that it is difficult to manufacturing and yield rate usually.
Another kind of technology is called LCOS.LCOS uses the liquid crystal that is applied to the reflective mirror substrate.Along with liquid crystal " is opened " or " closing ", light is reflected or stops so that light is modulated, and then produces display image.Compare with traditional transmission type LCD, reflective LCOS display allows more light by optical system, thereby higher brightness is provided.Usually in an optical projection system, have three LCOS chips at least, correspond respectively to the light in red channel, green channel and the blue channel.Yet LCOS has a lot of limitation.As just example, LCOS is difficult to make usually.In addition, LCOS needs at least three chips, and this makes projector big and heavy, and causes big expense.
Traditional LCOS also uses the reflective film of aluminum as electrode.Usually form traditional aluminium mirror by etch process.Etching and subsequent technique thereof usually reduce the quality on aluminium surface.On the aluminium mirror, may produce such as defectives such as depression and cuts.In addition, the r.m.s. roughness on the surface of deposition of aluminum surpasses usually
And there be inconsistent from central authorities to the edge of the wafer that causes by thin film deposition and etching.
As can be seen from the above, need a kind of improved technology, be used to handle semiconductor devices.
Summary of the invention
According to the present invention, provide the integrated circuit process technology that is used to make electronic device.In particular, the invention provides a kind of method that is used to make the electrode structure of liquid crystal over silicon (LCOS) device as display.But will be appreciated that the present invention has the more wide in range scope of application.
In a specific embodiment, the invention provides a kind of method of chemically mechanical polishing mirror structure.This mirror structure can be used for display (for example, LCOS, DLP), optics or the like.Described method comprises provides Semiconductor substrate, for example a Silicon Wafer.Described method forms first dielectric layer that covers on the described Semiconductor substrate, and forms an aluminium lamination that covers on described first dielectric layer.Described aluminium lamination has predetermined RMS (root mean square) roughness greater than 20 dusts.The described aluminium lamination of described method patterning is to expose the part of described first dielectric layer.Described method comprises and forms second dielectric layer on the expose portion that covers aluminium lamination after the patterned processing and described first dielectric layer.Described method is removed the part of described second dielectric layer from thickness.Described method uses polishing (touch-up) glossing to handle the upper surface of the described aluminium lamination after patterned processing, be reduced to below 5 dusts with surperficial r.m.s. roughness, and then the upper surface of the described aluminium lamination after patterned processing forms minute surface the described aluminium lamination after the patterned processing.Word " polishing " refers to a kind of glossing, has removed the material of relatively small amount in this technology
In another specific embodiment, described method provides a kind of method of chemically mechanical polishing mirror structure.Described method comprises provides for example Silicon Wafer of a substrate.Described method forms first dielectric layer that covers on the described Semiconductor substrate, and forms a metal level that covers on described first dielectric layer.The upper surface of described metal level has the first predetermined RMS roughness.Described method comprises one or more zones of using the polishing glossing to handle the upper surface of described metal level, be reduced to the second predetermined RMS roughness with r.m.s. roughness from the described first predetermined RMS roughness, and then form minute surface at the upper surface of described metal level with the described upper surface of described metal level.
By the present invention, many advantages that are better than conventional art have been realized.For example, present technique is easy to use the technology that depends on conventional art.In certain embodiments, this method has improved the device yield of the chip on each wafer.In addition, this method provides the technology compatible mutually with traditional handicraft, and need not change existing equipment or technology substantially.The present invention preferably provides the improved mirror or the electrode structure of the LCOS device that is used for display, and the kind electrode structure is used the polishing polishing technology that improves minute surface.According to embodiment, can realize one or more these advantages.At this specification hereinafter, these and other advantage will be described in detail.
Description of drawings
Fig. 1 is the simplification cross sectional view of LCOS device according to an embodiment of the invention;
Fig. 2-the 7th, a series of simplification cross sectional view are used to illustrate the method for making the LCOS device according to an embodiment of the invention.
The specific embodiment
According to the present invention, provide the integrated circuit process technology that is used to make electronic device.In particular, the invention provides a kind of method that is used to make the electrode structure of liquid crystal over silicon (LCOS) device as display.But will be appreciated that the present invention has the more wide in range scope of application.
Fig. 1 is the simplification cross sectional view of LCOS device 100 according to an embodiment of the invention.This diagrammatic sketch only is an example, and should be as the restriction to the scope of the claim here.Those of ordinary skills can find out many variations, modification and replacement.As shown, LCOS device 100 has Semiconductor substrate 101, for example a Silicon Wafer.Forming a MOS device layer 103 covers on the Semiconductor substrate.The MOS device layer preferably has a plurality of MOS devices.Each MOS device has a contact area 107 and the contact area 105 as current potential as electrode.The intermediate dielectric layer 111 that forms a planarization covers on the MOS device layer.The LCOS device also has a plurality of sunk areas in the inside of the part of intermediate dielectric layer, and has a metal level (for example, aluminium) and fill each sunk area to form corresponding a plurality of electrode zone 113 corresponding to each sunk area.Each electrode zone is coupled at least one MOS device in a plurality of MOS devices respectively by interconnection structure 109.Interconnection structure 109 can be connector (plug) or other similar structures.Forming a protective layer covers on each the surf zone in a plurality of electrode zones, to protect this surf zone.A fine finishining minute surface 116 is all arranged on each surf zone.This fine finishining minute surface is not preferably substantially such as blemish such as depression and cuts, and it is smooth as far as possible and is highly reflective.In the present invention, use chemically mechanical polishing to satisfy above-mentioned minute surface requirement.Employed CMP process is the polishing glossing under the certain condition more preferably.Each electrode can have the thickness from 2000 dusts to 4000 dusts, and can be other size.Each electrode is represented a pixel in the pel array of LCOS device.Also show the liquid crystal film 115 that covers on the electrode among the figure.The LCOS device also has the glass plate 119 that covers on 117 and one of the transparent electrode layers (for example, indium tin oxide) and is used to seal described sandwich construction.Reach the details description that hereinafter can find the method for operation LCOS device at this specification.
In order to operate the LCOS device, light 120 passes the glass coating, arrives liquid crystal film by transparency electrode.When electrode did not have biasing, liquid crystal film was in (off) state of not working basically, and it does not allow light to pass it.Or rather, light is blocked and can not reflects from the minute surface of electrode.When electrode by the MOS device in addition during bias voltage, liquid crystal film is in work (on) state, it allows light to pass 121.Light is from the reflection of the surface of electrode and pass in running order liquid crystal film.Minute surface does not preferably have defective substantially.Therefore at least 93% of incident light pass 121 LCOS devices and leave.Reach the details description that hereinafter can find the method for making the LCOS device at this specification.
According to embodiments of the invention, the method that is used to make the electrode structure of LCOS device can be briefly described as follows:
1. a substrate is provided;
2. form a transistor unit layer that covers on the described substrate;
3. form first intermediate dielectric layer that covers on the described transistor unit layer;
4. forming barrier metal layer covers on described first intermediate dielectric layer;
5. forming an aluminium lamination covers on the barrier metal layer on described first intermediate dielectric layer;
6. described aluminium lamination is carried out mask;
7. described aluminium lamination is carried out patterning to form a plurality of electrode zones, the corresponding pixel of each electrode zone;
8. by using the exposed region of described first intermediate dielectric layer, form borderline region around each pixel;
9. form second dielectric layer on each exposed region that covers each described pixel and described first intermediate dielectric layer;
10. described second dielectric layer that covers is carried out chemical-mechanical planarization technology to reduce the thickness of described second dielectric layer;
11. continue to reduce the thickness of described second dielectric layer, up to the surf zone that exposes each described electrode zone;
12. use described chemical-mechanical planarization technology to polish the surf zone of each described electrode zone of polishing, be reduced to second predeterminated level from first predeterminated level with r.m.s. roughness with described surf zone; And
13. forming a protective layer covers on the surf zone through the described aluminium lamination of patterned process;
14. provide a liquid crystal layer to cover on the described protective layer, transparent electrode layer covers on the described liquid crystal layer and a glassy layer covers on the described transparent electrode layer, and then forms the LCOS device; And
15. carry out other step of expection.
Top sequence of steps provides a kind of according to an embodiment of the invention method.As shown, the step combination of this method use comprises the method for the electrode structure that is formed for the LCOS device.Under the condition of the scope that does not break away from the claim here, can increase step, remove one or more steps or stipulate one or more steps with different order.In this specification and detailed description hereinafter, can find other details of the present invention.
Fig. 2 to Fig. 4 illustrates the method that is used to form the LCOS device according to an embodiment of the invention.These diagrammatic sketch are as just example, and should be as the restriction to the scope of the claim here.Those of ordinary skills can find out many variations, substitutions and modifications.With reference to figure 2, described method starts from provides a Semiconductor substrate 201 (for example, Silicon Wafer).Described method comprises transistor layer that covers on the substrate of formation.Transistor layer preferably has a plurality of MOS devices, and each MOS device has first contact area and second contact area.Described method comprises that also forming an intermediate dielectric layer 203 covers on the transistor layer.This dielectric layer can be formed by BPSG, FSG, oxide or their any combination etc.This dielectric layer preferably uses chemical vapor deposition method to form.This intermediate dielectric layer of described method planarization subsequently is to form the surf zone of planarization.This dielectric layer has carried out planarization alternatively.
Still with reference to figure 2, described method comprises that forming a barrier metal layer 205 covers on the planarized surface region of described planarization intermediate dielectric layer.Barrier metal layer can be by making such as suitable materials such as titanium nitride, titanium/titanium nitrides.Described method comprises that forming a metal level (for example, aluminium) 207 covers on the barrier metal layer.Metal level such as aluminium forms by sputter.Metal level has the surface of a substantially flat, but has some defective for example rough surface and other imperfection on it.In a specific embodiment, metal level has by using sputtering technology to form
And above predetermined roughness.Each electrode zone is coupled to each the MOS device in a plurality of MOS devices respectively.
With reference to figure 3, described method comprises that the upper surface to aluminium lamination carries out mask.Mask is patterned and exposes some zone of aluminium lamination.Described method is carried out patterning to form a plurality of electrodes 305 zones to aluminium lamination.The corresponding pixel of each electrode zone.The exposed region 303 of described method use intermediate dielectric layer forms the borderline region 301 around each pixel.The width of each pixel is that 4 microns to 50 microns, thickness are
Arrive
Certainly, those of ordinary skills can find out other variation, modification and replacement.
According to a specific embodiment, described method forms one second dielectric layer 401 and covers on each exposed region of each pixel and first intermediate dielectric layer, as the simplification diagrammatic sketch of Fig. 4 is illustrated.Second dielectric can be any suitable material or combination of materials.That is, this dielectric layer can be made by BPSG, FSG, oxide, HDP and their any combination etc.This dielectric layer preferably uses chemical vapor deposition method to form.
Described method is carried out chemical-mechanical planarization technology 501 to reduce the thickness of second dielectric layer, as shown in Figure 5 to second dielectric layer that covers subsequently.Described method continues to reduce the thickness of second dielectric layer, up to the surf zone that exposes each electrode zone.Described method preferably uses chemical-mechanical planarization technology to polish the surf zone of each electrode zone of polishing, is reduced to second predeterminated level with the surface roughness with described surf zone from first predeterminated level.
According to application, parameter that can be suitable is carried out the polishing polishing operation to aluminum metal.In a specific embodiment, can on EPO-222 that makes such as EBARA or other cmp tool, use the polishing glossing.The feature of polishing glossing is that to adopt a head rotating speed be 5 to 40RPM rubbing head, and the polishing glossing is included in the polishing pad that adopts one to contain soft material on the zone on the patterned aluminium layer (for example Rodel make Polytex).The polishing glossing preferably uses slurry (slurry) mixture of selecting.An example of such slurry mix comprises the chemical addition component that silica distributes and is used for aluminium surface oxidation and passivation.Contain a lot of silica dioxide granules in the solution of slurry mix, the diameter of these particles is from 30nm to 200nm, and the pH value of described solution is smaller or equal to 3.5.Glossing is preferably carried out from 5 to 36RPM rotatable platform having platform speed.According to some embodiment, polishing pad is about 1-3PSI (pound/square inch) to the downforce of substrate surface.Preferably, the feature of polishing glossing is that the removal speed of the aluminium lamination after the patterned processing is 50 to arrive
/ minute.According to specific embodiment, the polishing glossing is removed the aluminium lamination of 50 dust thickness downwards at least from the upper surface of patterned aluminium layer, and removes the aluminium lamination of 2000 dust thickness at most downwards from upper surface.According to a specific embodiment, the feature of final minute surface be reflectivity more than or equal to 93% and surperficial RMS roughness smaller or equal to
Other replacement, variation and modification can be arranged certainly.
Shown in Fig. 5,6 and 7, described method is carried out chemical-mechanical planarization alternatively, is eat-back the combination of (etch back) and polishing polishing.Described method is carried out oxide chemistry mechanical planarization metallization processes 551.Described method is used the process conditions through selecting on the TERES instrument of being made by LAM RESEARCH.The feature of described polishing is that the rotating speed of rubbing head is 15 to 30RPM (revolutions per minute).Glossing comprises that the polishing pad (for example IC1000 of Rodel manufacturing) that will contain polyurethane material is applied on the zone on the oxide skin(coating).Glossing preferably uses the slurry mix through selecting.An example of such slurry mix is the SS-25 (not selected) by the CabotMicroelectronics manufacturing of the U.S..The solution of slurry mix contains a lot of silica dioxide granules, and the diameter of these particles is from 80nm to 200nm, and the pH value of described solution is 10.8 to 11.2.Be to carry out glossing on 275ft/ minute the rotating band preferably having tape speed.According to some embodiment, polishing pad is about 5.0PSI to the downforce of substrate surface.Preferably the feature of glossing is that oxide removal speed 3000 arrives
/ minute.Oxide cmp technology is removed approximately at least from the upper surface of oxide skin(coating)
With a near zone the upper surface that arrives patterned aluminium layer.Other variation, modification and replacement can be arranged certainly.
As shown in Figure 6, described method is carried out etch-back technics 601.Etch-back technics can be dry method, wet method or the combination of the two.Carry out etch-back technics till the upper surface that exposes patterned aluminium layer.As shown in Figure 7, described method is carried out polishing glossing 701 subsequently.In a specific embodiment, can on EPO-222 that makes such as EBARA or other cmp tool, carry out the polishing glossing.The feature of polishing polishing is that the speed of rotation of rubbing head is 5 to 40RPM.The polishing glossing comprises the upper surface that a polishing pad that contains soft material (for example Rodel make Polytex) is applied to the aluminium lamination after the patterned processing.The polishing glossing preferably uses the slurry mix of selecting.Contain a lot of silica dioxide granules in the solution of slurry mix, the diameter of these particles is from 30nm to 200nm, and the pH value of described solution is smaller or equal to 3.5.Glossing is preferably carried out from 5 to 36RPM rotatable platform having platform speed.According to some embodiment, polishing pad is about 1-3PSI to the downforce of substrate surface.The feature of preferably polishing glossing is that aluminium removal speed 50 arrives
/ minute.According to specific embodiment, the polishing glossing is removed the thickness of 50 dusts at least from the upper surface of patterned aluminium layer, and removes the thickness of 2000 dusts at most from upper surface.According to a specific embodiment, the feature of the minute surface of gained be reflectivity more than or equal to 93% and the rms surface roughness smaller or equal to
Other replacement, variation and modification can be arranged certainly.
Described method comprises that also forming a protective layer covers on the surf zone of each electrode zone in a plurality of electrode zones, to protect the surf zone with fine finishining minute surface of each electrode zone.Preferably, in the LCOS device that completes, at least 91% light reflects from the fine finishining minute surface.Can form protective layer by exposed aluminium lamination surface being used handle such as oxidizing liquids such as hydrogen peroxide, BTA, ozone/aqueous mixtures.Oxidizing liquid is clean basically and can forms a passivation layer on exposed aluminium lamination.According to embodiment, other variation, modification and replacement can be arranged.
In order to finish the LCOS device, described method forms an interlayer that contains liquid crystal material.Here, the liquid crystal film of formation covers on the electrode.Forming a transparent electrode structure covers on the liquid crystal film.Described method forms a glass plate and covers on the transparency electrode.This sandwich forms as an accessory usually, and it is placed on the surface of electrode of LCOS device after a while.Certainly, those of ordinary skills can find out many variations, substitutions and modifications.
It is also understood that example as described herein and embodiment just for illustrative purposes, those of ordinary skill in the art can be according to the foregoing description modifications and variations of the present invention are.These modifications and variations are all in the application's spirit and scope, and also within the scope of the appended claims.
Claims (12)
1. method that the mirror structure is carried out chemically mechanical polishing, described method comprises:
A Semiconductor substrate is provided;
Form first dielectric layer that covers on the described Semiconductor substrate;
Form an aluminium lamination that covers on described first dielectric layer, the upper surface of described aluminium lamination has the predetermined r.m.s. roughness greater than 20 dusts;
The described aluminium lamination of patterning is with the part that exposes described first dielectric layer and form a plurality of patterns, and the expose portion of described first dielectric layer has formed each the border in described a plurality of patterns, the corresponding pixel of each in described a plurality of patterns;
Form second dielectric layer on the expose portion that covers described aluminium lamination after the patterned processing and described first dielectric layer;
From the part of described second dielectric layer of thickness removal, till the upper surface of the described aluminium lamination after exposing patterned processing;
By using the polishing glossing, handle the upper surface of the described aluminium lamination after the patterned processing, be reduced to below 5 dusts with surperficial r.m.s. roughness the described upper surface of the described aluminium lamination after the patterned processing, and then the described upper surface formation minute surface of the described aluminium lamination after patterned processing, described minute surface is corresponding to described pixel.
2. the method for claim 1, the feature of wherein said polishing glossing is that the speed of rotation of its rubbing head is 5 to 40 revolutions per minute.
3. the method for claim 1, wherein said polishing glossing comprise a polishing pad are applied on the described upper surface of the described aluminium lamination after the patterned processing.
4. the method for claim 1, wherein said polishing glossing comprise a slurry mix are applied to the just described upper surface of the described aluminium lamination after processed patterned processing.
5. the method for claim 1, wherein said polishing glossing comprise described Semiconductor substrate are placed on the rotatable platform that described rotatable platform is rotated with platform speed 5 to 36 revolutions per minute, thereby drives described substrate rotation.
6. the method for claim 1, the feature of wherein said polishing glossing is: employed polishing pad is 1-3 pound/square inch to the downforce of described substrate.
7. the method for claim 1, the feature of wherein said polishing glossing is: the removal speed of the aluminium lamination after the patterned processing be 50 to 1000 dusts/minute.
8. the method for claim 1, the feature of wherein said minute surface is: the reflectivity of this minute surface is more than or equal to 91%, and the r.m.s. roughness on the surface of this minute surface is less than or equal to 5 dusts.
9. the method for claim 1, the feature of the described aluminium lamination after the wherein patterned processing is its reflectivity from 83% to 91%, and the feature of described minute surface is that its reflectivity is greater than 91%.
10. the method for claim 1, wherein said polishing glossing are included in pH value smaller or equal to a plurality of silica dioxide granules in the solution of 3.5 slurry mix, the diameter of described a plurality of silica dioxide granules from 30 nanometers to 200 nanometers.
11. the described upper surface of the method for claim 1, wherein said polishing glossing described aluminium lamination after the patterned processing is removed the aluminium lamination of 50 dust thickness downwards at least, and removes the aluminium lamination of 2000 dust thickness at most downwards from described upper surface.
12. the method that the mirror structure is carried out chemically mechanical polishing, described method comprises:
A Semiconductor substrate is provided;
Form first dielectric layer that covers on the described Semiconductor substrate;
Form a metal level that covers on described first dielectric layer, the upper surface of described metal level has the first predetermined r.m.s. roughness; And
One or more zones of using the polishing glossing to handle the upper surface of described metal level, be reduced to the second predetermined r.m.s. roughness with r.m.s. roughness from the described first predetermined r.m.s. roughness, and then form minute surface at the upper surface of described metal level with the described upper surface of described metal level.
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| CN103008216B (en) * | 2012-11-26 | 2015-10-07 | 中国计量科学研究院 | The interior wall processing technology of aluminium alloy pressure cylinder and treating apparatus |
| US9971073B2 (en) | 2014-04-14 | 2018-05-15 | Corning Incorporated | Enhanced performance metallic based optical mirror substrates |
| CN103915333A (en) * | 2014-04-21 | 2014-07-09 | 上海联星电子有限公司 | Pixel surface evenness implement method |
| CN110596929A (en) * | 2019-08-29 | 2019-12-20 | 深圳市科创数字显示技术有限公司 | Silicon-based liquid crystal device, manufacturing method thereof and wavelength selection switch |
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