CN100583410C - Workpiece holder for semiconductor manufacture apparatus - Google Patents
Workpiece holder for semiconductor manufacture apparatus Download PDFInfo
- Publication number
- CN100583410C CN100583410C CN03109539A CN03109539A CN100583410C CN 100583410 C CN100583410 C CN 100583410C CN 03109539 A CN03109539 A CN 03109539A CN 03109539 A CN03109539 A CN 03109539A CN 100583410 C CN100583410 C CN 100583410C
- Authority
- CN
- China
- Prior art keywords
- substrate holder
- support component
- semiconductor manufacturing
- manufacturing facility
- holding member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 36
- 239000004065 semiconductor Substances 0.000 title claims description 35
- 229910052863 mullite Inorganic materials 0.000 claims abstract description 22
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 127
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- 238000000465 moulding Methods 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 239000004411 aluminium Substances 0.000 claims description 8
- 238000001259 photo etching Methods 0.000 claims description 7
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 8
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 28
- 229910017083 AlN Inorganic materials 0.000 description 27
- 238000000034 method Methods 0.000 description 24
- 238000005245 sintering Methods 0.000 description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 22
- 239000000463 material Substances 0.000 description 21
- 238000012360 testing method Methods 0.000 description 21
- 239000000203 mixture Substances 0.000 description 14
- 239000000843 powder Substances 0.000 description 13
- 239000011521 glass Substances 0.000 description 12
- 229910052757 nitrogen Inorganic materials 0.000 description 12
- 238000005238 degreasing Methods 0.000 description 10
- 238000011156 evaluation Methods 0.000 description 9
- 239000001856 Ethyl cellulose Substances 0.000 description 8
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 229920001249 ethyl cellulose Polymers 0.000 description 8
- 235000019325 ethyl cellulose Nutrition 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 230000008646 thermal stress Effects 0.000 description 8
- 238000012423 maintenance Methods 0.000 description 7
- 229910010271 silicon carbide Inorganic materials 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 238000005498 polishing Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000000428 dust Substances 0.000 description 4
- 239000003292 glue Substances 0.000 description 4
- 238000001746 injection moulding Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000035939 shock Effects 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000008602 contraction Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 230000003319 supportive effect Effects 0.000 description 2
- 230000005068 transpiration Effects 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052580 B4C Inorganic materials 0.000 description 1
- 241000446313 Lamella Species 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000009972 noncorrosive effect Effects 0.000 description 1
- 238000004537 pulping Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
Abstract
The present application discloses a semiconductor-manufacturing-apparatus workpiece holder whose wafer-retaining surface is superior in isothermal properties, and that is suitable for use in thermosetting of photolithographic photoresists in coater/developers, and in baking of low dielectric constant, i.e. low-.k, insulating films. The workpiece holder is made up of a wafer holder 1, and a support member 4 that supports the wafer holder 1, and features the thermal conductivity of the support member 4 being lower than the thermal conductivi ty of the wafer holder 1. The wafer holder 1 and the support member 4 either ar e not joined, or if joined are made to have a difference in thermal expansion coefficient of 2.0 x 10-6.degree.C or less. The chief component of the wafer holder 1 preferably is AIN, and of the support member 4, mullite.
Description
Technical field
Present invention relates in general to be applied in the workpiece holding frame in the semiconductor manufacturing facility, relate in particular to such semiconductor manufacturing facility workpiece holding frame: it is applicable to the photoresist in thermosetting glue spreader/developing machine, and heating/baking low-k, just hang down k, dielectric film in.
Background technology
In recent years, in semiconductor was made, because semi-conductive integrated level is more and more higher, semiconductor is more and more microminiaturized, the spacing of being electroplated between the wide and line of metal wire (interconnection) in aluminium on the silicon chip that forms or the copper circuit by sputtered aluminum or copper narrowed down year by year.
For aluminium or copper circuit, interconnection pattern is formed by photoetching technique.For example, resin is coated on the aluminium film uniformly, thereby on the aluminium interconnection film, forms negative pattern photoresist, thereafter, with the exposure sources that is called as steeper (stepper) pattern is printed on the photoresist, and the thermosetting photoresist is to remove unwanted zone.With etching machines etching aluminium film and removal photoresist, just obtained patterned aluminium interconnection along negative area of the pattern.
Because interconnection line is more and more near causing phase mutual interference between the signal in the line, must between the interconnection and the insulating material of filling low-k between the lamella eliminate phase mutual interference between the interconnection line.For this purpose, use silicon dioxide as insulating material traditionally, the material of low K dielectrics also is used as the dielectric film of low-k gradually.
Form low k dielectric film with a kind of method, according to the method, the raw material of film are dissolved pulping, the rotation pasting produces layer uniformly, with above-mentioned photoetching technique pattern is formed on the described layer, dries by the fire thereafter to make its hardening in heater.
Be clipped in stainless steel thin slice in the quartz crystal slice do the heater of stratie be applied in the aforesaid thermosetting photoetching film and the baking insulating film with low dielectric constant in the example of heater.In addition, because the isothermal and the durability issues of heater just wish to have the firing equipment that the isothermal performance is good and durability is high.
Simultaneously, the heater that embeds among high thermal conductance, high erosion-resisting AlN or the Si3N4 of the wherein molybdenum coil made of pottery is used in the capacitor voltage divider (CVD) that forms various films.The heater of pottery manufacturing keeps the back side on surface to be connected to an end of tubular aluminum support component at substrate like this, and the other end of support component is supported by the O shape circle that is sealed in the chamber.In addition, the electrode terminal of corrosion resistance difference and electrode power supply lead-in wire is contained in the inside of tubular aluminum support component, so that it is not exposed in the etchant gas in the chamber.
In semiconductor is made, in order to reduce cost, dwindle the size of silicon chip, up-to-date excursion is from 8 inches to 12 inches.Therefore, require to strengthen the isothermal that is applied in the thermosetting photoetching etchant resist and dries by the fire the heater in the low K dielectrics dielectric film.Particularly require the substrate of heater to keep isothermal rate in the surface within ± 1.0%, more be desirably in ± 0.5% within.
Do not contact air in the chamber in order to stablize substrate holder and guard electrode terminal, in most cases, substrate holder and support component link together in the heater that pottery is made.If under the different situation of the thermal coefficient of expansion of substrate holder and support component, in temperature rising and cooling procedure,, thereby can make more crisp ceramic material produce the crack because the difference of storeroom thermal coefficient of expansion will produce thermal stress.Therefore, use the substrate holder and the support component of same material to link together.
Yet, if will have the material of high thermoconductivity is used in the substrate holder to improve the isothermal that substrate keeps the surface, then because support component must be the material that identical high thermoconductivity is arranged also, so the heat that stratie produces in the substrate holder can be dispersed extremely effectively by the support component with high thermoconductivity.The temperature in the zone that substrate holder is connected with support component will significantly reduce, and this forces the isothermal of substrate holder to reduce.
If substrate holder with have low-thermal conductivity and the support component different and be connected on the substrate holder that---not worsening to connected supporter because of thermal transpiration in order to keep its isothermal attribute---can make the friable material pottery make owing to the thermal stress of different thermal coefficient of expansion generations and crackle occurs with its thermal coefficient of expansion.
In addition, for temperature that reduces the support component position and the thermal loss that prevents material on the end of chamber, in the chamber, install support component near water or similarly thing cooling.If under the short situation of support component, temperature gradient can be very steep, thereby make support component be easy to rupture under thermal shock.For the fracture that prevents that thermal shock from bringing, extend support component to 300 millimeter or common necessary length, thus, the length of putting the chamber of support component just must not be not very big, and this microminiaturization to equipment is a constraint.
Summary of the invention
Consider such situation at present, the objective of the invention is to realize that its substrate keeps the good semiconductor manufacturing facility workpiece holding frame of surperficial isothermal, it is suitable for use in thermosetting photoresist and baking low-k in glue spreader/developing machine, just, and in the dielectric film of low k.
According to the present invention, a kind of holding member that is used in the semiconductor manufacturing facility is provided, comprising: the substrate holder by pottery is made wherein is embedded with stratie; With the support component that is used for supporting described substrate holder, the pyroconductivity of above support is lower than the pyroconductivity of described substrate holder; Described substrate holder is placed on the described support component and both do not connect, and perhaps described substrate holder is connected with described support component and both difference of thermal expansion coefficient are 2.0 * 10
-6/ ℃ or littler.
In addition,, it is characterized in that according to aforementioned semiconductor manufacturing facility holding member of the present invention: from AlN, Al
2O
3, SiC, Si
3N
4In at least a Types of Pottery selected be the main component of substrate holder.
Semiconductor manufacturing facility holding member according to the invention described above is characterized in that: mullite is the main component of support component, especially the support component synthetic of mullite and aluminium preferably.
In addition, the present invention has realized using the semiconductor manufacturing facility of any aforesaid semiconductor manufacturing equipment holding member.Same, the semiconductor manufacturing facility that the present invention realizes is used in the thermosetting photoetching resin molding, perhaps dries by the fire in the dielectric film of low-k.
Determine as the present invention,, can realize isothermal rate that workpiece keeps the surface within ± 1.0%, better within ± 0.5%, thereby can make the workpiece holding frame of entire equipment microminiaturization for semiconductor manufacturing facility.Described semiconductor manufacturing facility workpiece holding frame is applicable in glue spreader and developing machine in the thermosetting photoresist and the baking low-k, just low k, dielectric film in.
With reference to accompanying drawing, by following detailed description, for those of ordinary skill in the art, aforementioned and other purpose of the present invention, characteristic, aspect content and advantage will become clear more and easy to understand.
The accompanying drawing summary
Fig. 1 is a constructed profile, shows according to substrate holder of the present invention, and it is fixed on the inside of chamber.
Embodiment
In making semi-conductive process, the process that is used for the process of glue spreader/developing machine thermosetting photoetching erosion resistant and low k baking---is different from the CVD equipment and the etching machines that use the etchant gas that contains halogen---and uses He, Ar, N
2And H
2Gas is as gaseous environment.Therefore, even because its main component is the material that is corroded by halogen easily, electrode can not corrode yet, so can generating chamber's pollution problems.
Thus, with the semiconductor manufacturing facility that uses non-corrosive gas, support component need not to be tubulose with the heater electrode terminal be that the lead-in wire that substrate holder provides is put into wherein, do not need to seal fully and indoor gas barrier yet.Therefore just needn't between substrate holder and supportive body, form gastight connection, for example just substrate holder is placed on the supportive body top and support it.
Under substrate holder and the unconnected situation of support component, the heat that stratie produces in the substrate holder can be controlled and can not exhale through support component, this means that in the present invention the pyroconductivity in conjunction with support component is lower than the pyroconductivity of substrate holder, thereby the isothermal attribute of substrate holder is significantly improved.In addition, because substrate holder is not connected with support component, they are not subjected to thermal stress at all, the danger that the substrate holder that does not therefore have pottery to make ruptures.
Consider that substrate holder preferably is not connected with support component, and just simply is placed in together by hot the dispersing of support component control, for example, as mentioned above, one is placed on another.Yet, be not exposed in the gas in the chamber in order to stablize substrate holder and the electrode terminal of protection in the substrate holder, in some cases, substrate holder and support component preferably link together and are fixed.
If under the significantly different situation of the thermal coefficient of expansion of substrate holder and support component, will produce in its junction because thermal stress and the contraction that the difference of its thermal expansion amount produces cracks susceptible ceramic material.In order under substrate holder and situation that support component is connected, to prevent that like this difference of the thermal coefficient of expansion between substrate holder and support component can be 2.0 * 10
-6/ ℃ or littler, the thermal stress that causes by the difference of thermal expansion amount with control, thus control is because the fracture that thermal stress causes in heat cycles.
Substrate holder is not connected or substrate holder and support and connection with supporter, under above-mentioned any situation, for isothermal rate that improves substrate holder and the length that shortens support component, use preferably that the high as far as possible made substrate holder of pyroconductivity---its pyroconductivity is higher than the pyroconductivity of support component at least; Simultaneously, with the alap material support component of pyroconductivity.
From high thermal expansion coefficient, thermal endurance and insulating properties, the substrate holder material preferably uses from AlN, Al
2O
3, SiC, Si
3N
4In at least a Types of Pottery selected.In these materials, the AlN with heat-and corrosion-resistant that special high thermoconductivity becomes reconciled is especially good.
In AlN was used in situation in the substrate holder, main component was mullite (3Al
2O
32SiO
2)---have 4.0 * 10
-6/ ℃ thermal coefficient of expansion, near 4.5 * 10 of AlN
-6/ ℃ thermal coefficient of expansion---material preferably be used as the material of support component.In fact, the mullite of extremely low pyroconductivity with 4W/mK is very effective for the control thermal transpiration, and can improve the isothermal of substrate holder.In addition, though the contraction in length of support component is followed the temperature gradient of substrate holder, the pollution of support component and substrate holder is installed and is not become serious, and the fact that can control owing to the fracture of thermal shock generation in the support component, the reliability of support component has increased.
In addition, with aluminium oxide (Al
2O
3) be added to the thermal coefficient of expansion that can regulate support component in the mullite, make it be similar to the thermal coefficient of expansion of the AlN that constitutes substrate holder.Add aluminium oxide and for example the thermal coefficient of expansion of support component adjusted in the mullite 4.5 * 10
-6/ ℃, use such support component to reduce the thermal stress of substrate holder and support component junction significantly, wherein, though will cool off and pass through the lifting temperature of thermal cycle process after connecting, thermal stress can sharply reduce, and reliability significantly improves.
Embodiment
Embodiment 1
Add weight percentage and account for 0.5% yittrium oxide (Y
2O
3) in the aluminium nitride (AlN), wherein yittrium oxide is as sintering aid, further disperse and mixes and add organic bond to containing Y
2O
3The AlN powder in, the splash baking mixture makes it become graininess then.Behind the sintering, will become granular powder injection molding to form the plate of two 350 mm dia * 5 millimeter thickness with uniaxial tension.The material of this injection molding in nitrogen current with 800 ℃ temperature degreasing, and in nitrogen chamber 1900 ℃ sintering temperature 6 hours.The pyroconductivity of the AlN sintered component of Chan Shenging is 180W/mK like this.2 plates that agglomerated material is made carry out surface finish with diamond dust.
With tungsten slurry the stratie circuit is printed on the AlN agglomerated material plate, wherein said tungsten slurry is the stirring the mixture of tungsten powder that has added sintering aid and ethyl cellulose adhesive.Then, the AlN plate of printing is put into nitrogen current 900 ℃ of following degreasings, 1850 ℃ of heating developments in 1 hour down.Be used for the bonding glass paste that mixes, wherein added the ethyl cellulose adhesive, be deployed on the maintenance sintered component, it is 900 ℃ of following degreasings in nitrogen current.
Pile up on the bonding glass surface and the stratie surface of these two plates that the AlN agglomerated material is made, and is placed on 50g/cm simultaneously
2Load under preventing misalignment, described two surfaces by 1800 ℃ down heating be connected in 2 hours, produce the substrate holder 1 that its inside that AlN makes is embedded with stratie 2 thus, as shown in Figure 1.The electrode terminal (not shown) that is connected to internal resistance heating element 2 is connected to the back side of described substrate holder 1, and this back side is connected with the power supply lead-in wire 3 that is connected electrically to system's external power source.
100mm external diameter * 90mm internal diameter * 100mm is long and by mullite (3Al
2O
32SiO
2) the cylindrical body supports parts made are as the supporting units support substrate holder.The pyroconductivity of the support component that this mullite is made is 4W/mK.As shown in Figure 1, an end of this support component 4 is clipped on the chamber 5, and substrate holder 1 is placed on the supporter 4, but does not connect.At this, the lead-in wire 3 of being drawn by substrate holder 1 that is placed in the support component 4 is sealed between O shape circle 6 and the chamber 5 by O shape circle 6.
Chamber 5 inner nitrogen pressures reduce to 0.1 holder, supply power on the stratie 2 from system outside chamber 5 is heated to 500 ℃, be fixed on the other end of the support component 4 on the chamber 5 simultaneously with water cooling, measure the isothermal rate of all surfaces of the substrate holder 1 that keeps substrate 7, it is in 500 ℃ ± 0.39%.Make 10 identical substrates retainers,, between room temperature and 500 ℃, raise and reduce temperature 500 times through thermal cycle test, still no problem through 10 retainers of heat cycles.
In addition, traditional support component with 300mm length must have the high chamber of 450mm to hold it.On the contrary, in embodiment 1, even its length reduction to 100mm, support component 4 is also without any problem, and can make high chamber 5 compactnesses of 250mm that are.
Embodiment 2
Add weight percentage account for 2% as the magnesium oxide (MgO) of sintering aid to aluminium oxide (Al
2O
3) in the powder, further disperse and mix additional adhesive to the Al that contains MgO
2O
3In the powder, the splash baking mixture makes it become graininess then.Behind the sintering, will become granular powder to be injection molded as the plate of 2 350mm diameter * 5mm thickness with uniaxial tension.
With stirring the mixture of the tungsten powder that is added with sintering aid and ethyl cellulose, the stratie circuit is printed on the parts in the parts of above-mentioned injection molding.Then, by the degreasing in 700 ℃ of air streams of the parts of the injection molding that printed, and with its 1600 ℃ down heating carried out sintering in 3 hours.Thereby the Al that produces
2O
3The pyroconductivity of sintered component be 20W/mK.With diamond dust sintered component is done surface finish.
Keep moulding part with above-mentioned same mode sintering, be used for the bonding glass paste that mixes that is added with the ethyl cellulose adhesive to be deployed on the maintenance moulding part of sintering the degreasing in 900 ℃ of air streams of described maintenance moulding part.Pile up the bonding glass surface and the stratie surface of these two plates of agglomerated material, and connect the generation substrate holder in mode same among the embodiment 1.Electrode terminal is connected to the back side of substrate holder in mode same among the embodiment 1, and lead-in wire also is connected on this back side.
Al
2O
3The substrate holder of making be placed on embodiment 1 in the identical mullite support component top of making.An end of mullite support component is clipped on the chamber.Under the condition identical with embodiment 1, measure the isothermal rate of all surfaces on the substrate holder surface that keeps substrate, it is in 500 ℃ ± 0.7%.In addition, make 10 identical substrate holders, with embodiment 1 in identical method through the heat cycles test, any one does not have problems yet in them.
Embodiment 3
Add weight percentage and account for 2% boron carbide (B as sintering aid
4C) in carborundum (SiC) powder, further disperse and mixes the adhesive that adds to containing B
4In the SiC powder of C, the splash baking mixture makes it become graininess then.Behind the sintering, will become granular powder to be injection molded as the plate of 2 350mm diameter * 5mm thickness with uniaxial tension.
With stirring the mixture of the tungsten powder that is added with sintering aid and ethyl cellulose, the stratie circuit is printed on the sheet in the above-mentioned moulding material sheet.Then, the degreasing in 900 ℃ of nitrogen current of the injection molded parts of printing, and with its 1900 ℃ down heating carried out sintering in 5 hours.Thereby the pyroconductivity of the SiC sintered component that produces is 150W/mK.With diamond dust sintered component is done surface finish.
Keep moulding part with above-mentioned same mode sintering, be used for the bonding glass paste that mixes that is added with the ethyl cellulose adhesive to be deployed on the maintenance moulding part of sintering the degreasing in 900 ℃ of nitrogen current of described maintenance moulding part.Pile up the bonding glass surface and the stratie surface of these two plates of agglomerated material, and connect the generation substrate holder in mode same among the embodiment 1.Electrode terminal is connected to the back side of substrate holder in mode same among the embodiment 1, and lead-in wire also is connected on this back side.
The substrate holder that SiC makes be placed on embodiment 1 in the identical mullite support component top of making.An end of mullite support component is clipped on the chamber.Under the condition identical with embodiment 1, measure the isothermal rate of all surfaces on the substrate holder surface that keeps substrate, it is in 500 ℃ ± 0.5%.In addition, make 10 identical substrate holders, with embodiment 1 in identical method through the heat cycles test, any one does not have problems yet in them.
Embodiment 4
Add weight percentage and account for 2% yittrium oxide (Y respectively as sintering aid
2O
3) and aluminium oxide (Al
2O
3) to silicon nitride (Si
3N
4) in the powder, further disperse and mix additional adhesive to containing Y
2O
3And Al
2O
3Si
3N
4In the powder, the splash baking mixture makes it become graininess then.Behind the sintering, will become granular powder to be injection molded as the plate of 2 350mm diameter * 5mm thickness with uniaxial tension.
With stirring the mixture of the tungsten powder that is added with sintering aid and ethyl cellulose, the stratie circuit is printed on the sheet in the above-mentioned molded material piece.Then, the degreasing in 900 ℃ of nitrogen current of the injection molded parts of printing, and with its 1900 ℃ down heating carried out sintering in 5 hours.Thereby the Si that produces
3N
4The pyroconductivity of sintered component be 20W/mK.With diamond dust sintered component is done surface finish.
Keep moulding part with above-mentioned same mode sintering, be used for the bonding glass paste that mixes that is added with the ethyl cellulose adhesive to be deployed on the maintenance moulding part of sintering the degreasing in 900 ℃ of nitrogen current of described maintenance moulding part.Pile up the bonding glass surface and the stratie surface of these two plates of agglomerated material, and connect the generation substrate holder in mode same among the embodiment 1.Electrode terminal is connected to the back side of substrate holder in mode same among the embodiment 1, and lead-in wire also is connected on this back side.
Si
3N
4The substrate holder of making be placed on embodiment 1 in the identical mullite support component top of making.An end of mullite support component is clipped on the chamber.Under the condition identical with embodiment 1, measure the isothermal rate of all surfaces on the substrate holder surface that keeps substrate, it is in 500 ℃ ± 0.8%.In addition, make 10 identical substrate holders, with embodiment 1 in identical method through the heat cycles test, any one does not have problems yet in them.
Embodiment 5
The substrate holder that the AlN identical with the foregoing description 1 makes is placed on 100mm external diameter * 90mm internal diameter * 100mm length and the top of the support component made by stainless steel, and both do not connect.Can recognize the identical back side that is connected to substrate holder among electrode terminal and lead-in wire and the embodiment 1 of an end of internal resistance heating element.Here, stainless pyroconductivity is 15W/mK.
This substrate holder has been done the evaluation and test identical with embodiment 1, and wherein the isothermal rate on substrate holder surface is 500 ℃ ± 0.42%.In addition, make 10 identical substrate holders, with embodiment 1 in identical method through the heat cycles test, any one does not have problems yet in them.
Embodiment 6
Add weight percentage and account for 5% Al
2O
3The mixture that powder forms in the AlN powder is used for making the substrate holder of embodiment 1, wherein is added with extrusion bonded dose in the mixture, and behind the sintering, mixture is injection molded as the cylindrical shape of 100mm external diameter * 90mm internal diameter * 100mm length.In 900 ℃ of nitrogen current,, under 1850 ℃,, and polish cylindrical two ends, formed support component like this its sintering 6 hours to described cylinder degreasing.
AB-Si glass is deployed into an end of this support component that AlN makes, and it is being connected to (pyroconductivity: 170W/mK on the substrate holder that the AlN identical with embodiment 1 make under 800 ℃; Thermal coefficient of expansion: 4.5 * 10
-6℃).The substrate holder of such generation is done the evaluation and test identical with embodiment 1, and wherein the isothermal rate is 500 ℃ ± 0.5%.In addition, make 10 identical substrate holders, with embodiment 1 in identical method through the heat cycles test, any one does not have problems yet in them.
Embodiment 7
Prepare with embodiment 1 in the identical substrate holder of making by AlN and by the support component of mullite manufacturing.The two ends of support component are through polishing, and an end is used the B-Si generate, and is connected to substrate holder under 800 ℃.The thermal coefficient of expansion of AlN and mullite is 0.5 * 10
-6℃.
The substrate holder of such generation is done the evaluation and test identical with embodiment 1, and wherein the isothermal rate is 500 ℃ ± 0.43%.In addition, make 10 identical substrate holders, with embodiment 1 in identical method through the heat cycles test, any one does not have problems yet in them.
Embodiment 8
Prepare the cylindrical body supports parts of 100mm external diameter * 90mm internal diameter * 100mm length, it is by adding Al
2O
3Mullite (3Al
2O
32SiO
3) synthetic material make the Al of Jia Ruing wherein
2O
3Thermal coefficient of expansion is adjusted to 4.5 * 10
-6℃.Two ends of support component all pass through polishing, and end is launched to form by B-Si glass, and are connected to the substrate holder that the AlN identical with embodiment 1 makes under 800 ℃.
The substrate holder of such generation is done the evaluation and test identical with embodiment 1, and wherein the isothermal rate is 500 ℃ ± 0.41%.In addition, make 10 identical substrate holders, with embodiment 1 in identical method through the heat cycles test, any one does not have problems yet in them.
Embodiment 9
The substrate holder that uses the AlN identical to make with embodiment 1.For support component, use the composition identical, the support component that manufacturing has following shape with embodiment 8.Manufactured being shaped as of determining: a support component a 350mm external diameter * 330mm internal diameter * 100mm length; Two support component b 10mm external diameter * 9mm internal diameter * 100mm length.
Support component a and support component b two ends separately all pass through polishing, and an end of each parts is to be launched to form by B-Si glass, and it is connected to the substrate holder of being made by AlN separately in nitrogen under 800 ℃.Yet support component a is connected to the centre at its substrate holder back side, and two support component b each be connected to their substrate holder back side so that the coated electrode terminal.
The substrate holder of such generation is done the evaluation and test identical with embodiment 1, and it uses the isothermal rate of the substrate holder of support component a is 500 ℃ ± 0.44%, is 500 ℃ ± 0.40% and use the isothermal rate of the substrate holder of two support component b.In addition, make 10 identical substrate holders, with embodiment 1 in identical method through the heat cycles test, any one does not have problems yet in them.
Comparison example 1
Make the substrate holder that AlN makes with the method identical with embodiment 1.Support component is made by the AlN identical with substrate holder, and it has 100mm external diameter * 90mm internal diameter * 300mm length.The pyroconductivity of substrate holder and support component all is 180W/mK.Two ends of support component have all been done polishing, and an one end is launched to form by B-Si glass, and is connected to substrate holder under 800 ℃.
The substrate holder of such generation is done the evaluation and test identical with embodiment 1, and wherein the isothermal rate is 500 ℃ ± 1.5%.In addition, make 10 identical substrate holders, with embodiment 1 in identical method through the heat cycles test, any one does not have problems yet in them.
Comparison example 2
Make substrate holder and support component with the method identical with comparison example 1, except the contraction in length of support component to 100mm.Substrate holder and support component are made by AlN, and their pyroconductivity is 180W/mK.Substrate holder and support component are connected in the mode identical with comparison example 1.
The substrate holder of such generation is done the evaluation and test identical with embodiment 1, and wherein the isothermal rate is 500 ℃ ± 2.0%.In addition, identical substrate holder kept 1 hour down at 500 ℃, so because water cooling keeps the terminal thermal shock that produces to make described substrate holder fracture.
Comparison example 3
Make substrate holder and support component with the method identical with comparison example 1.Substrate holder and support component are made by AlN, and their pyroconductivity is 180W/mK.Substrate holder is placed on the top of support component, but is not connected with support component.
The substrate holder of such generation is done the evaluation and test identical with embodiment 1, and wherein the isothermal rate is 500 ℃ ± 1.2%.In addition, make 10 identical substrate holders, with embodiment 1 in identical method through the heat cycles test, any one does not have problems yet in them.
Comparison example 4
The substrate holder that uses the method manufacturing AlN identical to make with embodiment 1.For support component, the support component of a 100mm external diameter * 90mm internal diameter * 300mm length is made of copper.The pyroconductivity of substrate holder makes 180W/mK, and the pyroconductivity of support component is 393W/mK.Two ends of support component all pass through polishing, and substrate holder is placed on its top but does not connect.
The substrate holder of such generation is done the evaluation and test identical with embodiment 1, and wherein the isothermal rate is 500 ℃ ± 2.5%.In addition, make 10 identical substrate holders, with embodiment 1 in identical method through the heat cycles test, any one does not have problems yet in them.
Only selected selected enforcement that the present invention is explained.But it will be understood to those of skill in the art that under the situation that does not depart from principle of the present invention and essence, can change these embodiments that its scope also falls in claim of the present invention and the equivalent institute restricted portion thereof.In addition, aforesaid embodiment just is used for explaining according to the present invention, is not the present invention that claim and equivalent thereof limit is limited.
Claims (13)
1. holding member that is used in the semiconductor manufacturing facility comprises:
Substrate holder by pottery is made wherein is embedded with stratie; With
Be used for supporting the support component of described substrate holder, the pyroconductivity of above support is lower than the pyroconductivity of described substrate holder;
It is characterized in that: described substrate holder is placed on the described support component and both do not connect, and perhaps described substrate holder is connected with described support component and both difference of thermal expansion coefficient are 2.0 * 10
-6/ ℃ or littler.
2. semiconductor manufacturing facility holding member according to claim 1 is characterized in that: be selected from AlN, Al
2O
3, SiC, Si
3N
4In at least a Types of Pottery as the main component of described substrate holder.
3. semiconductor manufacturing facility holding member according to claim 2 is characterized in that: described substrate holder is AlN.
4. semiconductor manufacturing facility holding member according to claim 1 is characterized in that: mullite is the main component of described support component.
5. semiconductor manufacturing facility holding member according to claim 2 is characterized in that: mullite is the main component of described support component.
6. semiconductor manufacturing facility holding member according to claim 3 is characterized in that:
Mullite is the main component of described support component.
7. semiconductor manufacturing facility holding member according to claim 4 is characterized in that:
Described support component is the synthetic of mullite and aluminium.
8. semiconductor manufacturing facility that uses semiconductor manufacturing facility holding member as claimed in claim 1.
9. semiconductor manufacturing facility that uses semiconductor manufacturing facility holding member as claimed in claim 2.
10. semiconductor manufacturing facility that uses semiconductor manufacturing facility holding member as claimed in claim 3.
11. semiconductor manufacturing facility that uses semiconductor manufacturing facility holding member as claimed in claim 4.
12. semiconductor manufacturing facility that uses semiconductor manufacturing facility holding member as claimed in claim 7.
13. semiconductor manufacturing facility according to claim 8, it is to be used in thermosetting photoetching resin molding, perhaps dries by the fire the equipment in the insulating film with low dielectric constant.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002111515A JP4311910B2 (en) | 2002-04-15 | 2002-04-15 | Holder for semiconductor manufacturing equipment |
| JP2002111515 | 2002-04-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1452233A CN1452233A (en) | 2003-10-29 |
| CN100583410C true CN100583410C (en) | 2010-01-20 |
Family
ID=28672566
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN03109539A Expired - Fee Related CN100583410C (en) | 2002-04-15 | 2003-04-09 | Workpiece holder for semiconductor manufacture apparatus |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US20050160989A1 (en) |
| EP (2) | EP1603151A2 (en) |
| JP (1) | JP4311910B2 (en) |
| KR (1) | KR100551642B1 (en) |
| CN (1) | CN100583410C (en) |
| CA (1) | CA2424391A1 (en) |
| TW (1) | TWI239067B (en) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005285355A (en) | 2004-03-26 | 2005-10-13 | Ngk Insulators Ltd | Heating apparatus |
| JP2005317749A (en) * | 2004-04-28 | 2005-11-10 | Sumitomo Electric Ind Ltd | Holding body for semiconductor manufacturing apparatus and semiconductor manufacturing apparatus loaded therewith |
| JP4542485B2 (en) * | 2004-12-14 | 2010-09-15 | 日本碍子株式会社 | Alumina member and manufacturing method thereof |
| CN100415387C (en) * | 2004-12-15 | 2008-09-03 | 上海华虹Nec电子有限公司 | Gumming machine for increasing dust-filtering function |
| DE102005056536A1 (en) * | 2005-11-28 | 2007-05-31 | Aixtron Ag | Chemical vapor deposition reactor for production of semiconductor devices has encapsulated electrical resistance heater |
| JP6290650B2 (en) * | 2014-02-24 | 2018-03-07 | 日本特殊陶業株式会社 | Heating device |
| CN104549909B (en) * | 2014-12-26 | 2017-03-22 | 芜湖新世纪净化器材有限责任公司 | Edge-sealing gluing system for folding filter element and gluing process for edge-sealing gluing system |
| US10631370B2 (en) | 2015-10-30 | 2020-04-21 | Ngk Insulators, Ltd. | Member for semiconductor manufacturing apparatus, method for producing the same, and heater including shaft |
| JP6697363B2 (en) * | 2015-10-30 | 2020-05-20 | 日本碍子株式会社 | Semiconductor manufacturing equipment member, manufacturing method thereof, and heater with shaft |
| CN105935635B (en) * | 2016-06-30 | 2018-12-14 | 苏州市永通不锈钢有限公司 | Concentric circles size applicator |
| CN105921375B (en) * | 2016-06-30 | 2018-10-30 | 苏州博来喜电器有限公司 | Soaking size applicator |
| CN109549253A (en) * | 2017-09-27 | 2019-04-02 | 常州市派腾电子技术服务有限公司 | Atomizer and its electronic cigarette |
| JP7312631B2 (en) | 2019-07-16 | 2023-07-21 | 日本特殊陶業株式会社 | heating element |
| KR102518254B1 (en) * | 2021-09-14 | 2023-04-05 | 주식회사 케이에스엠컴포넌트 | Heating device for semiconductor manufacturing equipment |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0447155B1 (en) * | 1990-03-12 | 1995-07-26 | Ngk Insulators, Ltd. | Wafer heaters for use in semi-conductor-producing apparatus, heating units using such wafer heaters, and production of heaters |
| JP2553078Y2 (en) * | 1991-04-20 | 1997-11-05 | ソニー株式会社 | Substrate heating device |
| DE69432383D1 (en) * | 1993-05-27 | 2003-05-08 | Applied Materials Inc | Improvements in substrate holders suitable for use in chemical vapor deposition devices |
| US5846891A (en) * | 1997-06-10 | 1998-12-08 | Korea Institute Of Science And Technology | Thermal shock-resistant alumina-mullite composite material and preparation method thereof |
| JPH11343571A (en) * | 1998-05-29 | 1999-12-14 | Ngk Insulators Ltd | Susceptor |
| JP3631614B2 (en) * | 1998-05-29 | 2005-03-23 | 京セラ株式会社 | Ceramic heater |
| JP3512650B2 (en) * | 1998-09-30 | 2004-03-31 | 京セラ株式会社 | Heating equipment |
| US6310755B1 (en) * | 1999-05-07 | 2001-10-30 | Applied Materials, Inc. | Electrostatic chuck having gas cavity and method |
| JP2002057207A (en) * | 2000-01-20 | 2002-02-22 | Sumitomo Electric Ind Ltd | Wafer holder for semiconductor-manufacturing apparatus, manufacturing method of the same and the semiconductor-manufacturing apparatus |
| JP2001203257A (en) * | 2000-01-20 | 2001-07-27 | Sumitomo Electric Ind Ltd | Wafer holder for semiconductor manufacturing apparatus |
| US6414271B2 (en) * | 2000-05-25 | 2002-07-02 | Kyocera Corporation | Contact heating device |
| US20020185487A1 (en) * | 2001-05-02 | 2002-12-12 | Ramesh Divakar | Ceramic heater with heater element and method for use thereof |
-
2002
- 2002-04-15 JP JP2002111515A patent/JP4311910B2/en not_active Expired - Lifetime
-
2003
- 2003-04-03 CA CA002424391A patent/CA2424391A1/en not_active Abandoned
- 2003-04-04 EP EP05017259A patent/EP1603151A2/en not_active Withdrawn
- 2003-04-04 EP EP03252169A patent/EP1355347A3/en not_active Ceased
- 2003-04-09 TW TW092108121A patent/TWI239067B/en active
- 2003-04-09 CN CN03109539A patent/CN100583410C/en not_active Expired - Fee Related
- 2003-04-14 US US10/249,473 patent/US20050160989A1/en not_active Abandoned
- 2003-04-14 KR KR1020030023261A patent/KR100551642B1/en active IP Right Grant
-
2006
- 2006-06-01 US US11/421,490 patent/US20060201422A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| TW200308041A (en) | 2003-12-16 |
| EP1603151A2 (en) | 2005-12-07 |
| EP1355347A3 (en) | 2003-12-10 |
| EP1355347A2 (en) | 2003-10-22 |
| TWI239067B (en) | 2005-09-01 |
| JP4311910B2 (en) | 2009-08-12 |
| CN1452233A (en) | 2003-10-29 |
| US20060201422A1 (en) | 2006-09-14 |
| KR20030082399A (en) | 2003-10-22 |
| KR100551642B1 (en) | 2006-02-14 |
| US20050160989A1 (en) | 2005-07-28 |
| CA2424391A1 (en) | 2003-10-15 |
| JP2003309049A (en) | 2003-10-31 |
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