CN100594434C - Method for manufacturing nano-sized metal structure with large area covered by metal film - Google Patents
Method for manufacturing nano-sized metal structure with large area covered by metal film Download PDFInfo
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- CN100594434C CN100594434C CN200710304371A CN200710304371A CN100594434C CN 100594434 C CN100594434 C CN 100594434C CN 200710304371 A CN200710304371 A CN 200710304371A CN 200710304371 A CN200710304371 A CN 200710304371A CN 100594434 C CN100594434 C CN 100594434C
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Abstract
The invention relates to a method for manufacturing a metal structure with nanoscale, wherein the large area of the metal structure is covered by metal films. The steps of the method comprises utilizing a substrate which is cleaned clearly, coating bottom-layer electron beam resist PMMA on the substrate, pre-baking and spin coating a top-layer resist HSQ layer, performing graph exposure accordinga needed metal structure pattern, then developing and fixing the exposed pattern , further reacting a resist structure with an undercut structure generated by ion etching, and realizing the final metal structure through metal layer deposition and utilizing the precipitation and peeling technique. The method utilizes a double-layer resist technique combined by negativity electron beam resist HSQ which has highest resolution at the present and positivity electron beam resist PMMA which has fine peeling effect, and accurately controls the profile structure of the double-layer resist through controlling etching conditions to form a negativity resist pattern with the undercut structure which is favorable for peeling. The method is high-efficient and reliable, is short in processing time and high in resolution, and can manufacture a nanoscale structure of which the large area is covered with metal films on the substrate.
Description
Technical field
The present invention relates to a kind of method for making that adopts the negativity stripping technology on substrate, to realize the nanoscale metal construction that large tracts of land is covered by metal film, particularly a kind ofly utilize double-deck resist technology on substrate, to realize the method for making of large tracts of land by the nanoscale metal construction of metal film covering.
Background technology
Adopt electron beam exposure, metal coating and stripping technology realizing on the substrate that metal construction is the standard technology of processing nanoscale metal construction on substrate, the past people adopt positive electronic bundle resist to realize the processing of metallic pattern, for example positive electronic bundle resist-polymethyl methyl esters (hereinafter to be referred as PMMA).Realize that for utilizing stripping technology the key of metallic pattern processing is undercutting (Under-cut) resist structure 4 that will form as shown in Figure 1a, avoid the top shown in Fig. 1 b to cut (Over-cut) structure 5 as far as possible, because the metal adhesion on undercut construction metal target film 3 and the electron sensitive resist layer 2, thereby the entering of liquid that help removing photoresist realizes peeling off smoothly.The undercut construction people that utilize the double-deck resist of PMMA/MMA and other multilayer resist technology to form are easy to realize peeling off of metal positive corrosion-resisting agent figure, " utilize PMMA/LOR (lift-off resist) 6 double-deck resists to realize the stripping technology (Alift-off process for high resolution patterns using PMMA/LORresist stack) of high graphics; to be stated from " Microelectronic Engineering "; 2004; Vol.73-74; 278-281 is disclosed " as document 1, this method utilizes the double-deck resist of PMMA/LOR to realize tangible undercutting resist structure, as shown in Figure 2, thus can realize the making of high-resolution nanoscale metallic pattern smoothly.But the method that adopts positive corrosion-resisting agent to make metallic pattern generally only is applicable to the processing of small size by plated structure, because positive corrosion-resisting agent has only the exposure area just to be removed final formation metal pattern, therefore, for large tracts of land by plated structure, if it is adopt this method need expend a large amount of electron beam exposure time, infeasible substantially.And negativity electron sensitive resist exposed areas keeps, unexposed zone is removed, if therefore formation has the negative resist figure of undercut construction then is to make large tracts of land to be pursued by plated structure, shown in Fig. 3 a, for such metal construction, if adopt positive corrosion-resisting agent to peel off then need with all metal overlay areas (tiltedly scribe area) exposure, and only need exposing gets final product to the zone (white space as shown in Fig. 3 a) that do not cover metal for the negativity electron sensitive resist.But cut structure for the resist pattern that simple negative resist exposure back is produced for the top shown in Fig. 1 b, therefore be difficult to directly utilize negative resist to realize the making of negativity metallic pattern.So, up to the present also do not utilize stripping means to realize the job operation of nanoscale large-area metal covered structure.
Summary of the invention
The objective of the invention is to: solve and utilize the double-deck resist of PMMA/LOR to realize that the stripping technology of high graphics expends a large amount of electron beam exposure time defectives, with utilize existing positive corrosion-resisting agent and peel off the deficiency that can't make the large-area metal cover graphics, and the resist structure that forms of simple negative resist is cut the problem peeled off of can't realizing for the top, thereby provide a kind of hydrogen of utilization silsesquioxane (being called for short HSQ)/double-deck resist technology of PMMA (polymethyl methyl esters), realization has the negative resist figure of undercutting resist structure, makes the method for the nano-scale structures of large-area metal covering; This method be a kind of efficiently have process time short, resolution is high, make the method that large-area metal covers nano-scale structures reliably.
The object of the present invention is achieved like this:
Method of on substrate, making the metal construction that large tracts of land with nanoscale covers by metal film provided by the invention, its flow process may further comprise the steps as shown in Figure 4:
1) selection of substrate 1 and cleaning: the selected used substrate of processing metal figure of wanting, and selected substrate is carried out the cleaning of respective material, the substrate that will clean toasts on hot plate afterwards, is baking 10 minutes on 150 ℃ the hot plate in temperature for example, to remove the water of substrate surface;
2) coating of electron sensitive resist: the substrate that step 1) is cleaned is put in the glue spreader, the mode that adopts spin coating at first with positive electronic bundle resist-coating at substrate surface, this positive electronic bundle resist is the PMMA resist, the rotating speed of spin coating is 1000-5000rpm, or multiple spin coating, spin coating PMMA resist layer (bottom PMMA electron sensitive resist layer) 7 thickness is at least a times of required thickness of metal film, there is the substrate of PMMA resist to carry out preceding baking to spin coating then, be 150-180 ℃ wherein, toasted 1-5 minute for the temperature of drying by the fire before the PMMA resist; Substrate after will toasting is then put into spin-coating equipment once more, carries out the coating of top layer HSQ resist 9 again, and the thickness of hsq layer is 50～200nm; Again substrate is carried out preceding baking after the spin coating, so that the exposure characteristics of HSQ electron sensitive resist is fixed; Be between 160-200 ℃ for its pre-bake temperature of HSQ electron sensitive resist wherein, stoving time is 2-5 minute;
3) design of structure graph: according to required metal construction graphic designs exposure figure, exposure figure is the figure of nonmetal overlay area, as tiltedly scribe area is for needing plated part among Fig. 3 a, 8 of exposure figures are the white spaces of Fig. 3 a like this, i.e. the net region of Fig. 3 b;
4) exposure of figure and developing and fixing: with step 2) substrate that coats electron sensitive resist PMMA layer and hsq layer puts into electron beam exposure equipment, wherein exposure voltage can be regulated between 1keV-30keV according to the thickness of electron sensitive resist, and the optional value of diaphragm is 7.5,10,20,30,60 or 120 microns; Substrate after the exposure is carried out developing and fixing, obtain the figure of HSQ resist; Wherein developer solution is 2.5% Tetramethylammonium hydroxide, and development time is 1 minute, and photographic fixing was adopted washed with de-ionized water 10 seconds, dried up with drying nitrogen again;
5) reactive ion etching produces the resist structure with undercut construction: the substrate that step 4) is had HSQ resist figure is put into reactive ion etching equipment, utilize the HSQ resist to do mask, adopt oxygen gas plasma that the PMMA resist layer of bottom is carried out etching, obtain needed undercut construction; The flow that wherein adopts oxygen is that 20sccm-50sccm, etching pressure are that 20mTorr-50mTorr, etching power adopt 100W, and etching time was 120 second-300 seconds;
6) deposition of metal film: the substrate of the negative resist figure that step 5) is obtained with undercut construction, be put into the deposition of carrying out metallic diaphragm in the metal deposited-film equipment, the plated metal layer thickness is generally 1/3～1/2 of PMMA electron sensitive resist layer thickness, is about tens to the hundreds of nanometer;
7) utilize the solution-off stripping technology to realize final metal construction: the sample that will plate metal film is put into the container that acetone is housed, soaked about about 10 minutes, and rock container frequently the metal film above the resist is come off with electron sensitive resist, thereby on substrate, obtain having the metal construction that the large tracts of land of nanoscale is covered by metal film.
In above-mentioned technical scheme, described substrate comprises all kinds of conductions and semiconductor material slices, requires substrate surface smooth, and thickness generally is no more than 1mm.
In above-mentioned technical scheme, the molecular weight of described PMMA electron sensitive resist is 100k, 300k, 495k or 950k.
In above-mentioned technical scheme, the cleaning described in the step 1) is to adopt acetone, alcohol, secondary deionized water three step ultrasonic cleaning, and per step cleaned 3～5 minutes.
In above-mentioned technical scheme, on hot plate, toast in the described step 1), wherein baking temperature is 150 ℃, stoving time is 6-15 minute.
In above-mentioned technical scheme, the described graphic designs of step 3) adopts the GDSII graphics editing software, also can adopt L-edit figures design software to finish, and the minimum feature of electron beam exposure and distance between centers of tracks can be accomplished tens nanometers.But with reducing of live width and distance between centers of tracks, the thickness of PMMA and HSQ electron sensitive resist layer will reduce accordingly.
In above-mentioned technical scheme, step 5) is by the flow of control oxygen, the etch rate that etching pressure is controlled the PMMA resist, and the formation of undercut construction is mainly finished by the time of control etching, when the figure of HSQ resist is transferred to the PMMA resist layer fully, the cross-section structure of resist is steep substantially, increase along with etching time forms undercut construction then, and as shown in Figure 5, and the length of undercutting increases along with the increase of etching time.
In above-mentioned technical scheme, the step 6) depositing device can be metal coating equipment such as sputter or evaporation, and the metal material of deposition comprises each metalloid, alloy or metallic compounds such as Au, Ag, Cr; Institute's deposit metallic material layer thickness generally is no more than 1/2 of PMMA electron sensitive resist layer thickness between 10-800nm.
In above-mentioned technical scheme, step 7) also comprises puts into ultrasonic device with the sample that has plated metal film, carry out ultrasonic PROCESS FOR TREATMENT simultaneously, make on the resist metal film with electron sensitive resist fast, come off completely, for not carrying out ultrasonic sample, adopt the mode of needle injection to realize removing photoresist, also comprise acetone soln is heated to about 60 ℃, to accelerate the peel results that peeling rate obtains.
The invention has the advantages that:
Method of the present invention adopt present resolution the highest negativity electron sensitive resist hydrogensilsesquioxane (HSQ) and peel off the negativity stripping technology that the effective double-deck resist of positive electronic bundle resist PMMA (polymethyl methyl esters) combines, utilize the HSQ high-resolution figure that exposes, the method that adopts the oxygen gas plasma etching with the figure transfer of HSQ to the PMMA resist of bottom, and control the cross-section structure of double-deck resist accurately by the condition of control etching, be formed with and be beneficial to the negative resist figure of peeling off with undercut construction, shown in the stereoscan photograph of Fig. 5, this undercut construction makes the metal adhesion on metal target and the resist, thereby entering of the liquid that helps removing photoresist realizes that on substrate large-area metal covers the making of nano-scale structures.Therefore this method has fast, efficiently realizes that the high resolving power large-area metal covers the processing of nano-scale structures.
Description of drawings
Fig. 1 a helps the undercutting resist cross-sectional view of stripping technology
Fig. 1 b is unfavorable for that the top of stripping technology cuts the resist cross-sectional view
The positive corrosion-resisting agent SEM picture that Fig. 2 processes with the double-deck resist of PMMA/LOR with undercut construction
The metal construction synoptic diagram of the required preparation of Fig. 3 a a kind of embodiment of the present invention
The exposure figure synoptic diagram that Fig. 3 b is corresponding with the required metal construction of Fig. 3 a
Fig. 4 making of the present invention realizes the process chart of large-area metal covered structure method
The SEM picture that Fig. 5 method of the present invention utilizes the double-deck resist of HSQ/PMMA to form after etching with obvious undercut construction section
The single metal circular hole SEM figure that the whole substrate that Fig. 6 method of the present invention is utilized the double-deck resist of HSQ/PMM to peel off to obtain is covered by metal A g
Fig. 7 method of the present invention is utilized the double-deck resist of HSQ/PMMA to peel off the whole substrate that obtains to be schemed by plated optical grating construction SEM
Drawing is described as follows:
1-substrate 2-electron sensitive resist layer 3-metal film
4-undercut construction 5-cuts structure 6-LOR resist layer in the top
7-PMMA resist layer 8-exposure figure 9-HSQ resist layer
Embodiment
Utilize the double-deck resist technology of HSQ/PMMA to realize that on substrate large tracts of land is described in detail by the method for plated nanoscale metal construction below in conjunction with embodiment and accompanying drawing to the present invention
With reference to figure 4 flow processs, utilize preparation method of the present invention, adopting the molecular weight of positive electronic bundle resist is the PMMA electron sensitive resist of 495k, the whole substrate of processing specifically be may further comprise the steps by the single metal borehole structure that metal A g covers on semiconductor chips such as silicon, gallium arsenide, silit:
1) substrate selects silicon chip as substrate 1, is that the single-sided polishing silicon chip of 0.5mm is used acetone, alcohol and deionized water successively with thickness, each ultrasonic cleaning 3 minutes, and after cleaning the back and drying up with drying nitrogen, baking is 10 minutes on 150 ℃ hot plate;
2) coating of electron sensitive resist: the silicon chip that step 1) is cleaned is put in the glue spreader, the mode that adopts spin coating is that the PMMA electron sensitive resist of 495k is coated on the polished surface of substrate 1 with molecular weight, the rotating speed of spin coating is 5000rpm, the thickness that has applied the PMMA resist layer 7 of PMMA electron sensitive resist is 100nm, and in temperature baking 1 minute on 180 ℃ the hot plate with it, silicon chip after will toasting is then put into the coating that spin-coating equipment carries out top layer resist hsq layer once more, the rotating speed of spin coating is 4000rpm, the thickness of HSQ resist layer 9 is 50nm, and then substrate is placed on temperature is baking 2 minutes on 180 ℃ the hot plate, so that the exposure characteristics of HSQ electron sensitive resist is fixed;
3) design of required figure: utilize GDSII to make figure software, the design exposure figure, the figure of present embodiment is that diameter is the circle of 120nm; Exposure figure 8 is figures of nonmetal overlay area, and as tiltedly scribe area is for needing plated part among Fig. 3 a, exposure figure then is the white space of Fig. 3 a like this, i.e. the net region of Fig. 3 b;
4) exposure of figure: with step 2) substrate that coats resist is put into electron beam exposure equipment, and exposure voltage selects 10keV, aperture stop size to select 30 μ m, exposure dose to be chosen as 300 μ c/cm
2Carry out the exposure of figure; It is 2.5% Tetramethylammonium hydroxide that silicon chip after the exposure is put into concentration, develops 1 minute, and then puts into 10 seconds of deionized water photographic fixing, dries up with nitrogen at last, obtains the figure of HSQ resist;
5) reactive ion etching: the silicon chip that step 4) is had HSQ resist figure is put into reactive ion etching equipment, the flow that adopts oxygen is that 20sccm, etching pressure are that 50mTorr, etching power adopt 100W, etching time was 120 seconds, obtained the undercut construction 4 that undercutting length is about the double-deck resist of 30nm; Flow, the etch rate that etching pressure is controlled the PMMA resist by control oxygen in step 5), and the formation of undercut construction is mainly finished by the time of control etching, when the figure of HSQ resist is transferred to the PMMA layer fully, the cross-section structure of resist is steep substantially, increase along with etching time forms undercut construction 4 then, and the length of undercutting increases along with the increase of etching time;
6) deposition of metal film 3: the silicon chip of the negative resist figure with undercut construction that step 5) is obtained is put into the deposition of carrying out metal A g in the equipment of thermal evaporation, and the thickness of the metal of deposition (Ag) layer 3 is 50nm;
7) utilize the solution-off stripping technology to realize final metal construction: the sample that step 6) has been plated metal film is put into the container that acetone is housed, soaked about about 10 minutes, and rock container frequently the Ag metal film above the resist is come off with electron sensitive resist, thereby on the Si substrate, obtain the single metal circular hole that whole substrate is covered by metal A g, as shown in Figure 6.
Embodiment 2:
The preparation method of present embodiment is identical with embodiment 1, and difference is to use the PMMA electron sensitive resist of molecular weight as 950k, makes the optical grating construction of Au metal film on the quartz substrate that is coated with conducting films such as ITO, Ag, Cu, and actual conditions is as described below:
It is the piezoid that 1mm is coated with the electroconductive ITO layer that substrate 1 is selected thickness for use, cleaning step is identical with embodiment 1, adopting the spin coating rotating speed is 2000rpm, on substrate 1, apply the thick 950PMMA electron sensitive resist layer 7 of 300nm, it in temperature baking 5 minutes on 150 ℃ the hot plate, the rotating speed of 3000rpm is adopted in baking back, applies the thick HSQ resist layer 9 of 80nm, applies the back and in temperature be on 200 ℃ the hot plate baking 2 minutes.Exposure figure is the optical grating construction of live width 100nm cycle 300nm.Electron beam exposure parameter: exposure voltage 20keV, diaphragm 20 μ m, exposure dose 560 μ C/cm
2The reactive ion etching condition: the flow of oxygen is that 50sccm, etching pressure are that 20mTorr, etching power adopt 100W, and etching time was 180 seconds, obtained the undercut construction that undercutting length is about the double-deck resist of 20nm.Adopting the thermal evaporation apparatus growth thickness is the metal film 3 of the Au of 80nm.Adopt ultrasonic auxiliary mode in acetone soln, to carry out peeling off of figure, the final optical grating construction of on the quartz substrate that is coated with the ITO film, making Au, as shown in Figure 7.
Preparation method with the embodiment of the invention 1, adopting the molecular weight of positive electronic bundle resist is the PMMA electron sensitive resist of 495k, substrate is that the silicon dioxide of 500nm is as substrate 1 for thermal oxide one layer thickness on silicon chip, processing is by the method for the single metal array of circular apertures of Metal Cr covering on substrate 1, and actual conditions is as described below:
The cleaning step of substrate 1 is identical with embodiment 1, adopt the method for twice spin coating, the spin coating rotating speed is 2000rpm, on substrate, apply the thick 950PMMA electron sensitive resist layer 7 of 600nm, in the middle of twice coating and spin coating finish and sample respectively will be toasted on 180 ℃ hot plate 1 minute, the rotating speed of 2000rpm is adopted in baking back, applies the thick HSQ electron sensitive resist layer 9 of 150nm, applies the back and in temperature be on 160 ℃ the hot plate baking 5 minutes.Exposure figure is that diameter is the array of circular apertures of 1000nm for the 500nm cycle.Electron beam exposure parameter: exposure voltage 30keV, diaphragm 60 μ m, exposure dose 760 μ C/cm
2The reactive ion etching condition: the flow of oxygen is that 30sccm, etching pressure are that 50mTorr, etching power adopt 100W, and etching time was 300 seconds, obtained the undercut construction that undercutting length is about the double-deck resist of 50nm.Metal level 3 is the Cr film, and magnetron sputtering apparatus is adopted in growth, and thickness is 150nm.In temperature is to soak in 60 ℃ the acetone soln to carry out peeling off of figure, finally obtains the metal array of circular apertures that is covered by metal (Cr) layer on the substrate of silicon dioxide.
Certainly; the present invention also can have other various embodiments; under the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art work as can make various corresponding changes and modification according to the present invention, but these corresponding changes and distortion all should belong to the protection domain of the appended claim of the present invention.
Claims (7)
1. a fixture has the method for the large tracts of land of nanoscale by the metal construction of metal film covering, may further comprise the steps:
1) choice of substrate and cleaning: select and want the used substrate of processing metal structure graph, and selected substrate is carried out the cleaning of respective material, the substrate that will clean toasts on hot plate afterwards, to remove the water of substrate surface;
2) coating of electron sensitive resist: the substrate that step 1) is cleaned is put in the glue spreader, adopt the mode of spin coating at first bottom electron sensitive resist PMMA to be coated in substrate surface, the rotating speed of spin coating is 1000-5000rpm, or multiple spin coating, the thickness of the bottom PMMA resist layer of spin coating is at least a times of required thickness of metal film, have the substrate of bottom PMMA resist to carry out preceding baking to spin coating then, wherein the temperature of preceding baking is 150-180 ℃, toasts 1-5 minute; Substrate after will toasting is then put into spin-coating equipment once more, carries out the coating of top layer HSQ resist layer again, and the thickness of this HSQ resist layer is 50～200nm; Again substrate is carried out preceding baking after the spin coating; Wherein the pre-bake temperature for the HSQ resist layer is 160-200 ℃, and stoving time is 2-5 minute;
3) design of structure graph: according to required metal construction graphic designs exposure figure, exposure figure is the figure of nonmetal overlay area;
4) exposure of figure and developing and fixing: with step 2) substrate that coats PMMA resist layer and HSQ resist layer puts into electron beam exposure equipment, wherein exposure voltage is regulated between 1keV-30keV according to the thickness of electron sensitive resist, and diaphragm choosing value is 7.5,10,20,30,60 or 120 microns; Substrate after the exposure is carried out developing and fixing, obtain having the figure of HSQ resist; Wherein developer solution is 2.5% Tetramethylammonium hydroxide, and development time is 1 minute, and photographic fixing was adopted washed with de-ionized water 10 seconds, dried up with drying nitrogen again;
5) reactive ion etching produces the resist structure with undercut construction: the substrate that step 4) is had HSQ resist figure is put into reactive ion etching equipment, utilize top layer HSQ resist layer to do mask, adopt oxygen gas plasma that the PMMA resist layer of bottom is carried out etching, obtain needed undercut construction; The flow that wherein adopts oxygen is that 20sccm-50sccm, etching pressure are that 20mTorr-50mTorr, etching power adopt 100W, and etching time was 120 second-300 seconds;
6) deposition of metal film: the substrate of the negative resist figure that step 5) is obtained with undercut construction, be put into the deposition of carrying out metallic diaphragm in the metal deposited-film equipment, the plated metal layer thickness is 1/3～1/2 of a bottom PMMA resist layer thickness;
7) utilize the solution-off stripping technology to realize final metal construction: the sample that will plate metal film is put into the container that acetone is housed, soaked about about 10 minutes, and rock container frequently the metal film above the resist is come off with electron sensitive resist, thereby on substrate, obtain having the metal construction that the large tracts of land of nanoscale is covered by metal film.
2. by the described fixture of claim 1 method of the large tracts of land of nanoscale by the metal construction of metal film covering arranged, it is characterized in that described substrate requires substrate surface smooth for conduction or semiconductor material slices, thickness is below 1mm.
3. by the described fixture of claim 1 method of the large tracts of land of nanoscale by the metal construction of metal film covering arranged, it is characterized in that, cleaning described in the step 1) is to adopt acetone, alcohol, secondary deionized water three step ultrasonic cleaning, and per step cleaned 3～5 minutes.
4. by the described fixture of claim 1 method of the large tracts of land of nanoscale by the metal construction of metal film covering arranged, it is characterized in that the described graphic designs of step 3) adopts the GDSII graphics editing software, or adopt the L-edit graphic design software to finish.
5, by the described fixture of claim 1 method of the large tracts of land of nanoscale by the metal construction of metal film covering arranged, it is characterized in that, the step 6) depositing device is the equipment that adopts sputter or evaporated metal plated film, and the metal material of deposition is Au, Ag, Cr, alloy or metallic compound; Institute's deposit metallic material layer thickness is between 10-800nm.
6. by the described fixture of claim 1 method of the large tracts of land of nanoscale by the metal construction of metal film covering arranged, it is characterized in that, step 7) also comprises puts into ultrasonic device with the sample that has plated metal film, carry out ultrasonic PROCESS FOR TREATMENT simultaneously, the metal film on the resist is come off with electron sensitive resist; Perhaps, adopt the mode of needle injection to realize removing photoresist, or acetone soln is heated to about 60 ℃, soak and realize removing photoresist for not carrying out ultrasonic sample.
7. by the described fixture of claim 1 method of the large tracts of land of nanoscale by the metal construction of metal film covering arranged, it is characterized in that the molecular weight of described PMMA electron sensitive resist is 100k, 300k, 495k or 950k.
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| US6670285B2 (en) * | 2001-03-14 | 2003-12-30 | International Business Machines Corporation | Nitrogen-containing polymers as porogens in the preparation of highly porous, low dielectric constant materials |
| CN1385891A (en) * | 2001-05-14 | 2002-12-18 | 华邦电子股份有限公司 | Method for forming semiconductor metal inner conductive wire |
| CN1392592A (en) * | 2001-06-14 | 2003-01-22 | 中国科学院微电子中心 | Method for forming T-shaped gate with multilayer film and through once electronic beam exposure and multiple developing |
| JP2003133696A (en) * | 2001-10-30 | 2003-05-09 | Japan Science & Technology Corp | Metallic wiring board and method for manufacturing the same |
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| CN110850688A (en) * | 2019-11-28 | 2020-02-28 | 清华大学 | Method for manufacturing optical micro-nano graph on surface of lithium niobate thin film |
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| CN101470355A (en) | 2009-07-01 |
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