CN101065513B

CN101065513B - Gas distribution system for improving transient vapor phase deposition

Info

Publication number: CN101065513B
Application number: CN2005800408151A
Authority: CN
Inventors: 苏达哈尔·贡德哈利卡; 罗伯特·邓肯; 塞玛可·萨力米恩; 穆罕姆德·M·拉希德; 哈瑞·S·怀特赛尔; 布鲁诺·杰弗里昂; 帕德曼那泊罕·克里希纳拉杰; 鲁道夫·古杰尔
Original assignee: Applied Materials Inc
Current assignee: Applied Materials Inc
Priority date: 2004-11-29
Filing date: 2005-11-22
Publication date: 2010-05-12
Anticipated expiration: 2025-11-22
Also published as: US7722737B2; US20080041821A1; CN101065513A; JP4881873B2; TW200624591A; JP2008522416A; US20060113038A1; WO2006058240A1; KR100927495B1; TWI342899B; KR20070086758A

Abstract

Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises agas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which isdisposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel. The plurality of orifices arespaced from the gas inlet by a plurality of distances, and have sizes which vary with the distances from the gas inlet as measured along the first channel, such that the size of the orifice increaseswith an increase in the distance between the orifice and the gas inlet as measured along the first channel.

Description

Be used to improve the gas distributing system of transient vapor phase deposition

Technical field

The present invention roughly relates to semiconductor technology, and clearer and more definite, be about, for example be used for the gas distributing system of the improvement of chemical vapor deposition chamber, so that the transient vapor phase deposition of improvement to be provided.

Background technology

One of key step of making semiconductor element now is that the chemical reaction by gas forms thin layer on semiconductor substrate.This kind depositing operation is commonly referred to as chemical vapor deposition (CVD).The traditional hot chemical vapor deposition method is that reactant gas is supplied to substrate surface, is desired thin layer to form in the hot chemical reaction that brings out of this place's generation.On the other hand, plasma enhanced chemical vapor deposition (PECVD) technology then can be passed through the application of radio-frequency (RF) energy (RF), promotes reactant gas exciting near the substrate surface reaction zone and/or decomposing, in order to form plasma body.The species of hyperergy can produce institute's energy requirement that chemical reaction takes place in the plasma body, therefore compare the temperature that has reduced the CVD arts demand with traditional hot CVD technology.And high density plasma (HDP) CVD technology has further shown these advantages, because of the plasma body of densification is to form under low vacuum pressure, so make plasma species have more reactivity." high-density " can have the ion density that is equal to or higher than 1011 ion/cubic centimeters by literal its expression of upward understanding.

Utilize the application-specific of HDP-CVD technology to comprise that shallow trench isolation (STI), preceding metal and dielectric matter (PMD) are used and intermediate metal dielectric substance (IMD) is used.Yet the deposition characteristics in these various application can influence to some extent because of the diffusion between the adjoining course of the different constituents of tool, and diffusion is understood influence gained layer structure specific and desired characteristic.For avoiding this kind diffusion, one of settling mode that industry adopted comprises the intermediate barrier layer (intermediate barrier layer) that deposition is extra.For example, when deposition is through adulterated Si oxide in IMD uses, diffuses to the metal doping thing and can form the happy chemical species of seeing, make oxide compound and intermetallic adhesion variation at oxide/metal interface place.Before the dopant deposition silicon oxide layer, on metal, deposit the laying that is rich in silicon and can avoid the hotchpotch diffusion.The use of barrier layer has sizable help for the improvement of structure tackyness.In many application, deposit barrier layers is several when forming ad hoc structure has become customary step.For example, in the fluorinated silica glass that utilizes HDP-CVD was used, the silicon oxide layer that is rich in the normal dopant deposition fluorine of oxide liner bed course of silicon was formed on the base material before.

Deposition embryo deposit layer or laying are the key elements of avoiding the plasma body injury in the HDP-CVD reactor.Yet, reach even laying and truly have difficulty because the nonuniform gas of the instantaneous phase of embryo deposit distributes.A kind of method of the even laying of deposition is to utilize low-pressure strike at present, that is does not contain plasma body in the gaseous mixture in the treatment chamber.During mixing step, base material is to cool off not using under the plasma body, in order to reduce the depositing temperature of laying.The laying precursor gas generally includes oxygen and silicon source gas (for example silane), also may be fluoro-gas (for example silicon tetrafluoride).Plasma bombardment after the pre-blend step can be undertaken by the processing mode of low-pressure strike, for example be described in and applied on December 23rd, 1999, in just examining at present, and yield the U.S. Patent application the 09/470th of present assignee jointly, No. 819, its title is " LOW PRESSURE STRIKE INHDP-CVD CHAMBER ".During plasma body is initial, uses low-pressure strike can avoid the instability of plasma body, otherwise can cause the inconsistent of membrane quality.

On the other hand, now having observed the depositing temperature that raises as far as possible in the HDP-CVD reactor is a kind of slit completion method of key.Yet the mode that reduces depositing temperature by low-pressure strike will make the slit fill quality badness.

Summary of the invention

Described embodiment of the present invention during its instantaneous phase when gas flow to processing chamber by gas distributing system at first, can make gas be dispensed to processing chamber in comparatively uniform mode about gas distributing system.In specific embodiment, gas distributing system can be in conjunction with the different bore hole sizes between exterior passage way and interior passageway.The gas that flow to exterior passage way via the gas inlet can then pass through the hole of different size to interior passageway.When exterior passage way is measured, bore hole size is to increase with the distance between hole and gas inlet.In this way, gas can flow to interior gas passage more uniformly, because interior gas passage is to be coupled to several to be located at treatment chamber pneumatic outlet all around with circulating, so that gas is introduced treatment chamber.Exterior passage way and interior passageway are to be located at around the processing chamber in circular gas ring mode.After carrying out the low-pressure strike method, gas distributing system can need not reduce the embryo deposit temperature in order to deposit even laying, in order to guarantee sedimentary quality, comprises good slit filling characteristic.

According in the aspect of the present invention, gas distributing system comprises a gas ring, and it has an outside surface and an internal surface; And a gas inlet, be located at the outer surface of gas ring.The gas inlet fluidly couples with first channel, and this first channel is located between the outside surface and internal surface of gas ring.Several pneumatic outlets then are distributed in the total inner surface of gas ring, and itself and circulation ground couples mutually with second passage between the outside surface of being located at the gas ring and internal surface.Several holes then fluidly are coupled between first channel and the second passage.Several holes then with gas inlet some distances of being separated by, and when first channel is measured, its size changes along with the distance of distance gas inlet, so that bore hole size is increasing along with the distance between hole and gas inlet when first channel is measured.

According to another aspect of the present invention, gas is flowed into treatment chamber comprise with the apportioning method of handling base material a gas ring is provided, it comprises that an outside surface and an internal surface, be located at first channel and between this outside surface and internal surface and be located at second passage between this outside surface and internal surface.This first channel fluidly couples with second passage by several holes.Gas flow to the gas ring via gas inlet (being located at the outer surface of gas ring).The gas that flow to first channel via the gas inlet flow to second passage by several holes, and flow to treatment chamber by several gas holes (fluidly coupling with second passage).Several holes and gas inlet some distances of being separated by.Described hole has different size, and gas is dispensed to treatment chamber to provide roughly uniformly by pneumatic outlet during instantaneous when gas is introduced the gas ring at first.

Description of drawings

Fig. 1 is the simple diagram according to the embodiment of a high density plasma CVD of the present invention (HDP-CVD) system;

Fig. 2 is a simple nodal section figure applicable to the gas ring of the exemplary HDP-CVD system of Fig. 1;

Fig. 3 is the sectional view according to the gas ring of one embodiment of the invention;

Fig. 4 is the amplification sectional view of the part of Fig. 3 gas ring;

Fig. 5 utilizes known gas ring to be deposited on the variation in thickness figure of the layer on the base material;

Fig. 6 is the layer of Fig. 5 is deposited on the layer on the base material in the gas ring that utilizes one embodiment of the invention under the same terms variation in thickness figure.

The main element nomenclature

10 systems, 13 treatment chambers

14 domes, 16 plasma process districts

17 base materials, 18 substrate supports

19 base material acceptance divisions, 20 electrostatic chucks

21 base portions, 22 body elements

23 hot-plates, 24 cooling plates top

25 throttle body, 26 three-chip type throttling valve

27 gate valve, 28 isolated pumps

Coil 30 lateral coils on 29

31A generator 31B SRF generator

31C bias voltage RF (BRF) generator 32C bias voltage matching network

32A matching network 32B matching network

33 gas distributing system 34A-34B treatment chambers

First and second gas source of 34A-34B

The 34B gas source

34C-34D the 3rd and the 4th gas source

The 34E purge gas source

First and second gas flow controller of 35A-35B

35C-35D ' the 3rd and the 4th gas stream controller

Two MFCs36 gas of 35B-35B ' annular space

37 gas rings, 38 gas delivery lines

38A conveyer line 39 gas jets

40 gas jets, 41 body plenum

43B valve 43A valve

Pipeline before 43C valve 44 vacuum

Relief outlet on 45 upper spray nozzles 46

Space 50 remote plasma cleaning system on 48

The movable 54 clean air feed port of 53 reactors

55 apply pipe handles the position 56 times

" loaded " position 70 vacuum systems on 57

80B bias plasma system 80A plasma system

300 gas rings, 302 outside surfaces

304 internal surfaces, 306 gas inletes

308 first channels, 310 second passages

Hole in the middle of 312 6 hole 312b

312c is the nearest hole of hole 312a farthest

316 first gas holes, 318 second gas holes

320 two first channel end 324 lines

330 connectors, 500 known gas rings

502 gas inletes, 504 exterior passage ways

508 two holes of 506 interior passageways

510 first gas holes, 512 second gas holes

620 base materials

Embodiment

Fig. 1 is the embodiment that explanation one utilizes high density plasma CVD (HDP-CVD) system 10, but this system's dielectric layer.System 10 comprises that a treatment chamber 13, a vacuum system 70, come source plasma system 80A, a bias plasma system 80B, a gas distributing system 33 and remote plasma cleaning system 50.

The upper portion of treatment chamber 13 comprises a dome 14, and it is to be made by ceramic dielectric material, for example aluminum oxide or aluminium nitride.Dome 14 can define the coboundary in Cement Composite Treated by Plasma district 16.Cement Composite Treated by Plasma district 16 is as the border with base material 17 upper surfaces of bottom and substrate support 18.

Hot-plate 23 and cooling plate 24 be higher than dome 14 and with heat couple.In hot-plate 23 and cooling plate 24 can be controlled at dome temperature and make an appointment with ± 10 ℃ between about 100 ℃ to 200 ℃ scopes.But this optimizing dome temperature is to be suitable for different process.For example, generally wish that all remaining on dome than depositing operation is high temperature, to be used for cleaning or etch process.Correct control dome temperature also can reduce the amount of fragment in the treatment chamber or particulate, and improves the tackyness between settled layer and base material.

Generally speaking, be exposed under the plasma body and can heat the base material that places on the substrate support 18.Substrate support 18 comprises interior passageway and exterior passage way (not shown), so that thermal conversion gas (being sometimes referred to as backside coolant gas) is passed to substrate back side.

The bottom of treatment chamber 13 comprises a body elements 22, and it can be connected to vacuum system with treatment chamber.The base portion 21 of substrate support 18 is mounted in body elements 22 and forms continuous internal surface.Base material then by the mechanical blade (not shown) transmit debouch treatment chamber 13 sides send into/shift out the opening (not shown).The lift pins (not shown) can be done to rise and descend under the control of motor (not shown equally), moves to down from mechanical blade with the base material that will go up " loaded " position 57 places and handles position 56, and base material is to be placed on the base material acceptance division 19 of substrate support 18 in this disposal.Base material acceptance division 19 comprises an electrostatic chuck 20, and it can be fixed on base material on the substrate support 18 during substrate process.In a preferred embodiment, substrate support 18 is to be made by aluminum oxide or aluminium stupalith.

Vacuum system 70 comprises throttle body 25, its shade three-chip type throttling valve

And be to be connected to gate valve 27 and turbomolecular pump 28.It should be noted that throttle body 25 can provide the minimum of gas stream to block, to aspirate synchronously.Gate valve 27 can completely cut off pump 28 and throttle body 25, and the delivery flow also can be by restriction throttling valve 26 complete openings the time is controlled chamber pressure.The configuration of throttling valve, gate valve and turbomolecular pump can be accurate and stable chamber pressure is controlled at about 1 milli-torr (milli-Torr) to about 2 the holder ears between.

Come source plasma system 80A to comprise coil 29 and lateral coil 30 on one, all be installed on the dome 14.Symmetric ground connection plate washer (not shown) can reduce the electrical couplings between coil.Last coil 29 is by last source radio frequency (SRF) generator 31A supply power, and lateral coil 30 can be by side SRF generator 31B supply power, to provide independent current source position falcon and operating frequency to each coil.Radiation ion density in this kind dual coil system may command treatment chamber 13 is in order to improve plasma uniformity.Lateral coil 30 reaches and goes up coil 29 generally is the driving of irritability, and it does not need supporting electrode.In a specific embodiment, last power supply RF generator 31A about 8000 watts (7kW) can be provided nominally or be higher than the RF power supply of 2MHz, and side source RF generator 31B can provide 8000 watts (5kW) at the most nominally or be higher than the RF power supply of 2MHz.The operating frequency of top and side RF generator can depart from nominal operating frequency (for example reaching 1.7-1.9MHz and 1.9-2.1MHz respectively), forms efficient to improve plasma body.

Bias plasma system 80B comprises bias voltage RF (BRF) but generator 31C and bias voltage matching network 32C. bias plasma system 80B electric capacity ground are coupled to body elements 22 with base material portion 17, it is as supporting electrode. and bias plasma system 80B can be used for strengthening the transmission of the formed plasma species of source plasma system 80A (for example ion) to substrate surface. and in a specific embodiment, bias voltage RF generator can provide 8000 watts or be higher than the RF power supply of 13.56MHz.

RF generator 31A and 31B comprise the synthesizer of numerical digit control, and are operable in the range of frequency between about 1.8 to about 2.1MHz.Each generator comprises a RF pilot circuit (not shown), reflexes to the power supply of generator in order to measure from treatment chamber and coil, and adjust operating frequency with minimum reflected power, as have the knack of this technology personage understanding person.The RF generator generally is to operate in the load of tool 50 ohm characteristic impedance through design.The RF power supply can have the load reflection with the impedance of generator different qualities certainly.This can reduce the power supply that is converted to load.In addition, by load reflex to generator power supply may or the overload and the injury generator.Because plasma impedance may be between 5 ohm with down to more than 900 ohm; depend on plasma ion density or other factors; and because the power supply of reflection is the function of frequency; so adjust the generator frequency according to the power supply that is reflected; can increase the power supply that converts plasma body from the RF generator to, and the protection generator.Other plants the method that reduces reflected power and improve efficient is to cooperate matching network.

Matching network

32A and 32B can its coil 29 separately and the output impedance of 30 coupling generator 31A and 31B.The RF pilot circuit can be adjusted two matching networks by the mode that changes capacitance in the matching network, when load changes generator is matched to load.The RF pilot circuit can reflex at the power supply of load and adjust matching network when generator surpasses a specific limited.A kind of providing fixed coupling and effectively made the RF circuit need not adjust the method for matching circuit for this reflected power limits value is set in the arbitrary predictor that is higher than reflected power.This can help stable plasma by matching network being maintained its most close condition in some cases.Additive method also helps stable plasma, and for example, the RF pilot circuit can be sent to the power supply of load (plasma body) in order to judgement, and can increase or reduce the generator out-put supply, roughly maintains definite value will transmit power supply during stringer.

Air delivery system 33 can be via gas delivery lines 38 (only illustrating part), provides gas from several gas source 34A-34F treatment chambers that are used to handle base material.As have the knack of this technology personage can understanding person, be actually used in the gas source of source 34A-34F and conveyer line 38 and treatment chamber 13 actual be connected be depend on deposit and treatment chamber 13 in the cleaning procedure that carries out and changing.Gas is to introduce treatment chamber 13 via gas ring 37 and/or upper spray nozzle 45.Fig. 2 is simple, the partial cross section figure of gas ring 37 additional detail of display process chamber 13.

In an embodiment, first and

second gas source

34A and 34B and first and second gas stream controller 35A ' and 35B ' can provide the annular space (plenum) 36 of gas to the gas ring 37 via gas delivery lines 38 (only illustrating some).Gas ring 37 has several gas jets 39 (only illustrating so that explanation), in order to uniform gas stream is provided to whole base material.Nozzle length and nozzle angle can change, and give the profile and the gas evening ratio of the indoor special process unanimity of independent processing to revise supply.In an embodiment, gas ring 37 has 24 gas jets 39, and it is to be made by alumina-ceramic.

Gas ring 37 also has several gas jets 40 (only illustrating), its in a preferred embodiment with source gas jet 39 coplines and tool equal length, and be in an embodiment in order to receive gas from body plenum 41.

Gas jet

39 and 40 in some embodiment circulation ground do not couple, because of the mixed gas not before gas is injected treatment chamber 13 of hope among those embodiment.In other embodiment, can be by providing several opening (not shown), so that gas can give mixing earlier before injecting treatment chamber 13 in

body plenum

41 and 36 of gas annular spaces.In an embodiment, the 3rd and the

4th gas source

34C and 34D and the 3rd and the 4th gas stream controller 35C and 35D ' can provide gas to body plenum via gas delivery lines 38.Additional valves for example 43B (other valves are not shown) can stop by the gas of stream controller to treatment chamber.

Among the embodiment of, tool toxicity inflammable or corrosive gases, may wish to deposit the back and get rid of the gas that remains in the gas delivery lines in those uses.Can use for example valve 43B of three-dimensional formula valve (3-way valve) this moment, so that treatment chamber 13 is separated with conveyer line 38A, and with conveyer line 38A row guiding, for example the preceding pipeline (foreline) 44. of vacuum as shown in Figure 1, other similar valve such as 43A and 43C also can connect other gas delivery lines. can be located at treatment chamber 13 contiguous places in the actually operating of this kind three-dimensional formula valve, so that the volume of emission gases conveyer line (between three-dimensional formula valve and treatment chamber) does not minimize. in addition, two-way (on-off) valve (not shown) can be located between a mass flow control device (MFC) and the treatment chamber, or between gas source and MFC.

Referring again to Fig. 1, treatment chamber 13 also has upper spray nozzle 45 and goes up relief outlet 46.Upper spray nozzle 45 and last relief outlet 46 can independently be controlled top and side gas stream, to improve film equality and good adjustment depositing of thin film and doping parameters.Last relief outlet 46 is an annular opening around upper spray nozzle 45.In an embodiment, the first gas source 34A can replenish source gas jet 39 and upper spray nozzle 45.Source nozzle MFC 35A ' may command gas is sent to the amount of source gas jet 39, and upper spray nozzle MFC 35A may command gas is sent to the amount of gas jet 45.Same, both can be used for the flow of oxygen of control from single source of oxygen (34B for example originates) supreme relief outlet 46 and oxidizer gas nozzles 40

MFCs

35B and 35B '.The gas that is supplied to upper spray nozzle 45 and goes up relief outlet 46 can be kept independence before flowing to treatment chamber 13, or gas can mixing in last space 48 before flowing into treatment chamber 13.The same gas in independent source can be used for providing the different piece of treatment chamber.

In the embodiment of Figure 1 and Figure 2, remote microwave produces electricity can periodically clean deposition residues from processing chamber components with cleaning system 50.These cleaning system comprise remote microwave generator 51, and it can form plasma body by a purge gas source 34E (for example, fluorine molecule, nitrogen trifluoride, other fluorine carbide or equipollents) in reactor cavity 53.The reactive species of plasma body formation can be sent to treatment chamber 13 by clean air feed port 54 via applying pipe 55 thus.Be used to hold the impact that the material of cleaning plasma (as cavity 53 and apply pipe 55) must be able to be resisted plasma body.Should keep enough weak points in the distance operation that reactor cavity 53 and feed port are 54, because the plasma species of being desired can decay along with the distance of distance reactor cavity 53.In distal cavities, form cleaning plasma and can more effectively utilize microwave generator, and can not make processing chamber components be subjected to the glow discharge bombardment that may exist in the plasma body of temperature, radiation or original position formation.Therefore, sensitive element, for example electrostatic chuck 20 need not cover or the required protection of in-situ plasma cleaning procedure to consume wafer (dummy wafer).

Fig. 3 illustrates the gas ring 300 according to one embodiment of the invention.This gas ring 300 comprises an outside surface or peripheral 302 and one internal surface or 304 on every side.Gas inlet 306 is located at outside surface 302 places of gas ring 300, and negotiable younger brother and first channel or space 308 couple.This first channel 308 is located between the outside surface 302 and internal surface 304 of gas ring 300.Second passage or space 310 are located between the outside surface 302 and internal surface 304 of gas ring 300, and via several holes or opening and fluidly couple with first channel 308.As shown in Figure 3, first channel is an exterior passage way 308, and second passage is an interior passageway, and second passage society is between the internal surface 304 of exterior passage way 308 and gas ring 300.Yet in another embodiment, this first and second passage 308,310 can be done different configurations.For example, two passages can be laterally along the axle each interval of gas ring 300, and have same circumference.

Fig. 3 is six holes 312 of diagram, and it is roughly along the even interval of circumference of first channel 308 or second passage 310.Several first pneumatic outlets 316 are the internal surfaces 304 that are distributed in gas ring 300, and couple mutually with these second passage 310 circulation ground.Fig. 3 illustrates first pneumatic outlet 316, and it has 12 second pneumatic outlets 318 and is separated by with these second passage 310 fluids, and it also is configured to gas by other gas source introducing technology treatment chambers.For example, this first pneumatic outlet 316 can be used for guiding for example silane of silicon source gas, and second pneumatic outlet 318 then can be used for guiding other reactant gasess, for example oxygen.

In shown in specific embodiment in, second passage 310 extends 360 ° around the internal surface 304 of gas ring 300, and first channel 308 parts are extended less than 360 ° around the internal surface 304 of gas ring 300, be located at each place near two first channel ends 320 and have two first channel end spaced apart 320. holes 312, two first channel ends then in comprising the gas ring 300 of six evenly spaced holes 312 each other separately with about 60 ° angle, as shown in Figure 3. gas inlet 306 is to couple with first channel 308 near 320 middle approximately places of two first channel ends (distance along first channel 308 is measured). generally speaking, several holes 312 are to comprise that the setting greater than even number hole 312. several holes 312 of 2 is to be roughly symmetry with respect to line 324 and the center around the first channel 308 by gas inlet 306. these holes 312 do not have any one to be positioned on the line by the center around gas inlet 306 and the first channel 308. certainly, in alternate embodiment, the number of hole 312 and interval all can change.

Several holes 312 are gas inlet, interval 306 some distances.Hole 312 has different size, and gas distributes to provide roughly uniformly via pneumatic outlet 316 during instantaneous when gas is initially introduced gas ring 300.Generally speaking, the size of hole 312 can be with changing with the distance of gas inlet (when when first channel 308 is measured), so that hole 312 sizes increase with the increase of the distance (when along first channel 308 measurements) of 306 of hole 312 and gas inletes.

Fig. 4 is one o'clock the enlarged view of expression near first channel end 320.A kind of method of making hole 312 enters second passage 310 from outside surface 302 by first channel 308 for boring a through hole by gas ring 300 parts.The through hole that outside surface 302 and first channel are 308 can a connector 330 closures.

The 5th and Fig. 6 show to utilize known gas ring 500 and according to the experimental result of the gas ring 300 of the present invention's one exemplary embodiments deposit liner layer or air retaining wall on base material.In Fig. 5, known gas ring 500 comprises that one fluidly is coupled to the gas inlet 502 of exit passageway 504, and it is to be the hole of 180 ° of separations and fluidly to be coupled to interior passageway 506 by two settings.There are 24 first pneumatic outlets 510 fluidly to be coupled to interior passageway 506, and have 12 second pneumatic outlets 512 fluidly to be coupled to another gas source.About 0.188 inch of hole 508 diameters.Gas ring 300 has six holes 312, comprise two apart from the gas inlet 306 about 30 ° holes, two apart from the gas inlet 306 about 90 ° hole 312b and two apart from the gas inlet 306 about 150 ° holes.About 0.093 inch of immediate hole 312a diameter, about 0.125 inch of middle hole 312b diameter, and about 0.221 inch of hole 312c diameter farthest.

Set liner is a silicon oxide liners of utilizing the plasma enhanced chemical vapor deposition formation of HDP-CVD system 10.Process gas comprises the silane via first

pneumatic outlet

316 or 510 introducings, and via second

pneumatic outlet

318 or 512 oxygen of introducing.The energy that is applied comprises about 1500 watts last coil 29 and about 5000 watts lateral coil 30.Service temperature is about 450 ℃ and about 6 milli-torrs of working

pressure.Base material

520 and 620 diameters are 300mm.Depositing time about 3 seconds.

Utilize known gas ring 500 to be formed on about 241.8 dusts of laying thickness on the base material 520, changing value is 8.10%.As shown in Figure 5, both sides are thicker near the liner of two holes 508.Utilize gas ring 300 of the present invention to be formed on liner about 216.5 dusts of thickness then on the base material 620, changing value obviously has 4.48% improvement 3.62%.Difference in thickness then reduces at least half.As shown in Figure 6, liner thickness is comparatively symmetrical with respect to base material 620 centers.The symmetry value of liner is 2.66 (dust/dusts) among Fig. 6, and Fig. 5 then is 4.2.The present invention repeatedly tests different bore hole sizes, and finds that the size that the homogeneity of laying can be by increasing hole 312 (hole 312 when first channel 308 is measured that makes with 306 of gas inletes apart from increase) improves.After test result more illustrated during instantaneous, the gas ring 300 that utilizes different hole 312 sizes of tool was than under the steady-state condition, and can making subsequently, deposition continues to form roughly thin layer uniformly.

Should will be understood that, the above stated specification purpose is explanation and unrestricted. many embodiment will more can be after the reference above stated specification and have the knack of this technology personage and understand. for example, the present invention can contain the treatment chamber of other types and other handle the technology of base materials. the hole 312 of different numbers, size and configuration all can change to be applicable to particular case. therefore, the scope of the invention should with reference to claim with and the complete scope of equipollent and deciding.

Claims

1. gas distributing system that is used for providing gas stream to treatment chamber, it comprises at least:

One gas ring comprises an outside surface and an internal surface;

One gas inlet is located at the outer surface of this gas ring, and this gas inlet fluidly couples with a first channel, and this first channel is located between the outside surface and internal surface of this gas ring;

Several pneumatic outlets are distributed in the internal surface of this gas ring, and these several pneumatic outlets fluidly couple with a second passage, and this second passage is located between the outside surface and internal surface of this gas ring; And

Several holes, extend to this second passage in this gas ring, fluidly this first channel is couple to this second passage from this first channel, this first channel only fluidly is couple to this treatment chamber by this second passage, these several holes and this gas inlet some distances of being separated by, the size of described hole is along with the hole of measuring along this first channel changes to the distance of gas inlet, so that bore hole size is along with increasing along the increase of the hole of this first channel measurement and the distance between the gas inlet.

2. gas distributing system as claimed in claim 1, wherein these several holes are along the even on every side interval of this first channel.

3. gas distributing system as claimed in claim 1, wherein this second passage extends 360 ° around the internal surface of this gas ring.

4. gas distributing system as claimed in claim 3, wherein this first channel part is extended less than 360 ° around the internal surface of gas ring, and has two first channel ends spaced apart.

5. gas distributing system as claimed in claim 4, wherein this gas inlet be between two first channel ends in the middle of the range observation of first channel the place couple with this first channel, and wherein several holes comprise that number is greater than 2 even number hole.

6. gas distributing system as claimed in claim 5, wherein the setting of these several holes is to be symmetry with respect to the line by the center around gas inlet and this first channel.

7. gas distributing system as claimed in claim 6, wherein six holes distribute around this first channel.

8. one kind is used for one by flowing process gas to a treatment chamber and handle gas distributing system in the equipment of semiconductor base material in the mode that this treatment chamber carries out the process gas reaction, so that flow of process gas is flowed into treatment chamber, wherein this gas distributing system comprises at least:

One gas ring, comprise an outside and one in around;

One gas inlet is located at the outside place of this gas ring, and this gas inlet fluidly couples with a first channel, this first channel be located at this gas ring the outside and in around between; And

Several pneumatic outlets are distributed in around this gas ring interior, these several pneumatic outlets be fluidly and one be located at this gas ring outside and in around between second passage couple;

Wherein this first channel fluidly couples with the opening and the second passage that are positioned at different positions via several, this opening extends to this second passage from this first channel in this gas ring, this first channel only fluidly is couple to this treatment chamber by this second passage, these some distances in a plurality of extended distances gas inlet, described opening has different size, to provide uniform gas to distribute via described pneumatic outlet during instantaneous when gas is introduced the gas ring at first.

9. gas distributing system as claimed in claim 8, the size of wherein said opening is along with the opening of measuring along this first channel changes to the distance of gas inlet, so that the size of this opening is along with increasing along the increase of this opening of this first channel measurement and the distance between this gas inlet.

10. gas distributing system as claimed in claim 8, wherein these several openings are symmetry with respect to a line by the center around this gas inlet and this first channel.

11. gas distributing system as claimed in claim 8, wherein these several openings comprise number greater than 2 even number opening, and wherein do not have any opening to be positioned on the line by the center around gas inlet and the first channel.

12. gas distributing system as claimed in claim 8, wherein these several openings along first channel on every side and evenly at interval.

13. one kind flows into a treatment chamber to handle the method for a base material with a gas, this method comprises the following step at least:

One gas ring is provided, comprises an outside surface and an internal surface; One first channel is located between this outside surface and this internal surface; And a second passage, being located between this outside surface and this internal surface, this first channel fluidly couples with this second passage via several holes and this first channel only fluidly couples with this treatment chamber by this second passage; And

One gas is introduced this gas ring via a gas inlet that is located at this gas ring outer surface, the gas that this gas coming through inlet enters first channel enters second passage by several holes, and flows to treatment chamber by several and this negotiable pneumatic outlet that couples of second passage;

These several holes and this gas inlet some distances of being separated by wherein, wherein said hole have different size provides uniform gas to be dispensed to this treatment chamber with during instantaneous when gas is introduced the gas ring at first via described pneumatic outlet.

14. method as claimed in claim 13, the size of wherein said hole is along with the hole of measuring along this first channel changes to the distance of gas inlet, so that the size of hole is along with increasing along the increase of the hole of this first channel measurement and the distance between the gas inlet.

15. method as claimed in claim 13, wherein the setting of these several holes is to be symmetry with respect to the line by the center around this gas inlet and this first channel.

16. method as claimed in claim 13, wherein these several holes comprise number greater than 2 even number hole, and wherein do not have any hole to be positioned on the line by the center around this gas inlet and this first channel.

17. method as claimed in claim 13, wherein these several holes along this first channel on every side evenly at interval.

18. method as claimed in claim 13, wherein this gas comprises a silicon source gas.

19. method as claimed in claim 13, wherein this gas is at this treatment chamber internal reaction, to form a laying on base material.

20. method as claimed in claim 13, wherein this gas reacts in this treatment chamber by applying the mode of a plasma body in this treatment chamber.