CN101073024A - 多层线栅偏振器 - Google Patents
多层线栅偏振器 Download PDFInfo
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Abstract
一种用于使光(12)偏振的多层线栅偏振器(10a),包括设置在基底(14)之上的薄膜层的叠层(18),包括其长度大于所述光的波长且其周期小于所述光的半波长的细长金属基元(26)的线栅阵列(22)。所述层中的一个可以包括其折射率大于所述基底的折射率的薄膜层(18a-c)。所述薄膜层中的一个可以包括非金属基元(38、46)的介电阵列。
Description
技术领域
本发明一般涉及用于可见和近可见光谱的线栅偏振器。
背景技术
线栅偏振器(WGP)为设置在基底例如玻璃的表面上的平行线的阵列。通常,线栅偏振器是在基底上的线的单个、周期性的阵列。当线的周期大于光波长的约一半时,栅充当衍射光栅。当线的周期小于光波长的约一半时,栅充当偏振器。
虽然希望WGP透射一种偏振的所有光而反射所有其它偏振,但没有偏振器是完美的。实际的WGP将透射两种偏振的一些光,并将反射两种偏振的一些光。当光在透明材料例如玻璃薄片的表面上入射时,少量的光被反射。例如,在法向入射时,从玻璃的每个表面反射入射光的约4%。
已提出了在WGP之下或在线与基底之间设置膜,以使第一衍射级向较短波长移动,以便改善在部分可见光谱例如蓝光中的性能。参见美国专利No.6,122,103。该膜的折射率小于基底的折射率。还提出了蚀刻到基底或下面的层中以进一步减小线栅之下的有效折射率。参见美国专利No.6,122,103。还提出了将每条线形成为具有交替的金属与介电层的复合材料。参见美国专利No.US6,532,111。
发明内容
已经公认,开发具有改善的性能的线栅偏振器或者具有希望的偏振态例如p的增加的透射和另一偏振态例如s的减少的透射(或增加的反射)的线栅偏振器是有利的。另外,已经公认,线栅偏振器可以充当用于反射一种偏振态的金属和充当用于另一偏振态的有损耗的电介质的薄膜。因此,已经公认,可以将形状双折射(form birefringence)和有效折射率应用于线栅偏振器。另外,已经公认,可以将线栅偏振器视为薄膜层,并引入到光学叠层中。
简明并概括而言,本发明旨在用于偏振光的多层线栅偏振器。根据本发明的一个方面,所述偏振器包括设置在基底上并具有比所述基底的折射率大的折射率的至少一个薄膜层。线栅层设置在所述至少一个薄膜层之上。所述线栅层包括细长金属基元(element)的阵列,所述阵列具有比光的波长大的长度和比所述光的半波长小的周期。
根据本发明的另一方面,所述偏振器包括设置在基底之上的线栅层。所述线栅层包括细长金属基元的阵列,所述阵列具有比光的波长大的长度和比光的半波长小的周期。介电层设置在所述线栅层之上。所述介电层包括非金属基元的阵列。至少一个薄膜层设置在所述线栅层与所述介电层之间。
根据本发明的另一方面,所述偏振器包括设置在基底之上并跨过所述基底连续地延伸的薄膜层的叠层。所述薄膜层中的至少一个在结构和材料上是均匀的。所述薄膜层中的至少一个包括细长金属基元的线栅阵列,所述线栅阵列具有比光的波长大的长度并且比光的半波长小的周期。所述薄膜层中的至少一个包括非金属基元的介电阵列。
附图说明
通过结合附图进行的下列详细说明,本发明的附加的特征和优点将显而易见,这些附图通过实例共同示例了本发明的特征;其中:
图1和2为根据本发明的实施例的多层线栅偏振器的截面示意图(附图没有按比例绘制并且为清楚起见非常夸大地示出了特征);
图3为根据本发明的示例性实施例的多层线栅偏振器的截面示意图(附图没有按比例绘制并且为清楚起见非常夸大地示出了特征);
图4a为与其它偏振器相比图3的多层线栅偏振器的p偏振反射率与波长的关系的曲线图;
图4b为与其它偏振器相比图3的多层线栅偏振器的s偏振透射率与波长的关系的曲线图;
图4c为与其它偏振器相比图3的多层线栅偏振器的p偏振透射率与波长的关系的曲线图;
图5为根据本发明的示例性实施例的多层线栅偏振器的截面示意图(附图没有按比例绘制并且为清楚起见非常夸大地示出了特征);
图6a为与另一偏振器相比图5的多层线栅偏振器的s偏振反射率与波长的关系的曲线图;
图6b为与另一偏振器相比图5的多层线栅偏振器的p偏振透射率与波长的关系的曲线图;
图7为根据本发明的示例性实施例的多层线栅偏振器的截面示意图(附图没有按比例绘制并且为清楚起见非常夸大地示出了特征);
图8为根据本发明的示例性实施例的多层线栅偏振器的截面示意图(附图没有按比例绘制并且为清楚起见非常夸大地示出了特征);
图9为与另一偏振器相比图7和8的多层线栅偏振器的p偏振反射率与波长的关系的曲线图;
图10a和b为根据本发明的示例性实施例的多层线栅偏振器的截面示意图(附图没有按比例绘制并且为清楚起见非常夸大地示出了特征);
图11为与另一偏振器相比图10a和b的多层线栅偏振器的s偏振反射率与波长的关系的曲线图;
图12为根据本发明的示例性实施例的另一多层线栅偏振器的截面示意图(附图没有按比例绘制并且为清楚起见非常夸大地示出了特征);
图13为与另一偏振器相比图12的多层线栅偏振器的s偏振透射率与波长的关系的曲线图;
图14为根据本发明的示例性实施例的线栅层的截面示意图,该线栅层在该线栅层的金属基元之间的间隔中的具有介电材料;以及
图15为根据本发明的示例性实施例的具有两个介电栅的介电栅层的截面图,该两个介电栅具有两种不同材料的基元。
现在将参考并在此使用特定的语言描述所示例的示例性实施例。然而应该理解,并不旨在由此限制本发明的范围。
具体实施方式
已经公认,对于光的一种偏振,线栅偏振器实质上充当反射光(或其一种偏振)的金属,而对于光的另一种偏振,线栅偏振器实质上充当透射光(或其另一种偏振)的有损耗的电介质的薄膜。因此,已经公认可以将两种构思即形状双折射和有效折射率应用于改善偏振器的性能。
典型地不将线栅偏振器考虑为形状双折射的实例。通常,双折射意味着材料对于不同的偏振具有不同的折射率。双折射在晶体材料例如石英和在拉伸的聚合物中非常普遍。形状双折射是指由材料的形状造成的双折射。
当材料具有材料特性例如密度的变化时,在变化的尺度小于光的波长的情况下,折射率与均匀体材料的折射率不同。存在有效折射率,其是均匀薄膜具有的对光造成相同影响的折射率。该效应的理论处理被称为有效介质理论。通过介电材料利用该现象,以使这些事物成为蛾眼抗反射涂层。
另外,典型地不将线栅偏振器考虑为薄膜。在光学中,典型地仅对于介电材料考虑形状双折射和有效折射率。然而,已经公认将线栅偏振器处理为具有有效折射率的等效双折射薄膜允许将其视为薄膜叠层中的基元,并使用具有特定性能目标的薄膜设计技术。
本发明利用薄膜结合金属线栅偏振器以改善偏振器的性能。通常,这可包括在线栅之下和其顶上的膜。这些膜中的任何一种是均匀的或者是介电栅。线栅可以为复合栅、或具有复合线。将线栅与材料不同的、由此折射率不同的多个层结合可以减少希望被透射的偏振的反射。例如,可以配置线栅以反射s偏振光并透射p偏振光。如上述讨论的,虽然希望透射所有的p偏振光而反射所有的s偏振光,但典型的线栅将透射两种偏振的一些并且反射两种偏振的一些。然而,已经发现,将线栅处理为双折射薄膜并将线栅与多个薄膜结合可以减少p偏振光的反射。
如图1和2中所示例的,将通常在10a和10b所示的多层线栅偏振器器件示出作为根据本发明的示例性实施,以使光12偏振或者使一种偏振态与正交偏振态基本上分离,并以较少反射和/或透射不需要的偏振的改善的方式这样做。相信这样的器件在可见光应用中,或者为用在约400-700nm(纳米)或者说0.4-0.7μm(微米)的范围的可见光上具有显著的效用。这样的可见光应用可包括投影显示设备例如投影仪。可以将这里描述的多层线栅偏振器器件用于各种不同的应用,例如偏振器、分束器、检偏器等。同样相信这里的器件在近可见光应用,例如紫外和/或红外应用,或者为用在约250-400nm或700-10,000nm的范围的可见光上具有效用。因此,这里宽泛地使用术语“光”来表示可见光、紫外光以及红外光,或者在250-10,000nm范围的电磁波。
偏振器10a和10b包括承载或支撑多个薄膜层18或薄膜层18的叠层的基底14,包括线栅或者线栅层22。基底14对于处理的光可以是透明的。例如,基底可以是玻璃(Bk7)。其它基底可以为石英或塑料。另外,基底14相对于剩余薄膜层可以具有充分的厚度ts。此外,基底可以具有折射率(或折光率)ns。例如,玻璃基底(Bk7)具有1.52的折射率(550nm处)。(应该理解,折射率随波长稍微变化。)
线栅或线栅层22包括细长金属基元26的线栅阵列。基元26具有比光的波长大的长度,并以比光的半波长小的周期P位于通常平行的排列中。因此,为用于可见光,基元26具有比可见光的波长大,或者大于700nm(0.7μm)的长度。然而,该长度可以更长。基元26可以具有比可见光的半波长小或者小于200nm(0.2μm)的中心至中心的间隔、间距或周期P。基元26还可具有处于间距或者周期的10至90%的范围的宽度w。对于可见光应用,基元26还可具有比光的波长小或者小于400nm(0.4μm)的厚度或高度。在一个方面,对于可见光应用,厚度可以小于0.2μm。
基元26或阵列通常与可见光相互作用,从而通常1)透射具有基本上均匀和恒定的线偏振态(例如p偏振)的透射束30,以及2)反射同样具有基本上均匀和恒定的线偏振态(例如s偏振)的反射束34。基元通常透射具有局部正交或垂直于基元取向的第一偏振态(p偏振)的光,并反射具有平行于基元取向的第二偏振态(s偏振)的光。应理解,线栅偏振器将以特定程度的效率分离光的偏振态,或者可以透射和/或反射两种偏振态的部分。还应理解,可以将基元的一部分配置为透射或反射不同的偏振态。
可以通过光刻在基底上或之上形成基元26或阵列。基元26可以导电,并可以由铝、银、金或铜形成。
多个薄膜层18可以包括在线栅层22之下和/或之上的层。因此,可以在基底14与线栅层22之间设置一个或多个层18a-c。另外,可以在线栅层22之上设置一个或多个层。层18可以由不同的材料或者与基底14不同的材料甚至相互不同的材料形成。因此,层18可以具有与基底14的折射率ns不同的折射率n。此外,已经发现,其折射率n1-3比基底14的折射率ns大的层18a-c中的至少一个减少了p偏振光的反射。因此,根据本发明的一个方面,偏振器10a或10b具有设置在基底14与线栅层22之间的至少一个薄膜层18a,并且薄膜层18a具有比基底14的折射率ns大的折射率n1。根据本发明的另一方面,偏振器10a或10b可以具有至少两个薄膜层18a和b,或者至少三个薄膜层18a-c。
薄膜层18a-c可以在整个基底14上连续地延展,并可以是一致或恒定的层,由18a和18c所示。可以由介电材料形成层18a-c。例如,这些层可以由:氧化铝;三氧化锑;硫化锑;氧化铍;氧化铋;三氟化铋;硫化镉;碲化镉;氟化钙;氧化铈;锥冰晶石;冰晶石;锗;二氧化铪;氟化镧;氧化镧;氯化铅;氟化铅;碲化铅;氟化锂;氟化镁;氧化镁;氟化钕;氧化钕;氧化镨;氧化钪;硅;氧化硅;三氧化二硅;二氧化硅;氟化钠;五氧化钽;碲;二氧化钛;氯化铊;氧化钇;硒化锌;硫化锌;以及二氧化锆形成。可以在基底上淀积膜层。在金属氧化物的情况下,其可以通过从氧化物蒸发剂材料(根据需要具有附加的氧回填物)开始淀积。然而,还可以通过蒸发母体金属,然后用背景中的O2氧化所淀积的材料来淀积材料。
可以控制薄膜层18a-c的厚度t1-3和材料(或折射率n1-3)以减少p偏振光的反射,如下面更加详细的描述。
薄膜层18a-c的一个或多个层包括这样的介电栅,该介电栅包括非金属基元38的阵列。可以彼此基本上平行地取向阵列的非金属基元38和金属基元26。另外,阵列可以具有基本上相等的周期和/或宽度。在一个方面,对准介电栅的非金属基元38与金属基元26,或者非金属基元38与线栅层的金属基元26对准,如图1中所示。在另一方面,介电栅的非金属基元38与金属基元26是偏离的,或者非金属基元38相对于线栅层的金属基元26是偏离的,如图2中所示。
如上所述,多个薄膜层18可以包括设置在线栅层22之上的一个或多个其它薄膜层。其它薄膜层可以包括介电材料,并可以是连续的或恒定的。另外,其它薄膜层42可以包括这样的介电栅,该介电栅包括非金属基元46的阵列。阵列的非金属基元46和金属基元26可以被彼此基本上平行地取向,并可以具有基本上相等的周期。在一个方面,对准非金属基元46与金属基元26,或者在线栅层22的金属基元26上方或之上对准介电栅的非金属基元46,如图1中所示。在另一方面,非金属基元46与金属基元26是偏离的,或者介电栅的非金属基元46在线栅层22的金属基元26的上方是偏离的。
如上面所讨论的,可以改变薄膜层18的数量、厚度t以及材料(或折射率)以减少p偏振光的反射(增加p偏振光的透射)和/或减少s偏振光的透射(增加s偏振光的反射)。层18a和c中的一些在结构和材料上可以是均匀的,而其它层可以包括栅,例如线栅层22的金属基元26或介电栅的非金属基元38和46。下面讨论具体结构的实例。
参考图3,示出了多层线栅偏振器的实例10c。该偏振器包括在玻璃(BK7)基底14上并在基底与线栅或线栅层22之间的三个均匀薄膜层50a-c。基底14具有1.52的折射率ns。第一薄膜层50a为具有65nm的厚度t1的氧化镁(MgO)的均匀材料。这样,第一层50a具有比基底14的折射率ns大的1.74的折射率n1(对于550nm的波长)。第二薄膜层50b为具有130nm的厚度t2和2.0的折射率的ZrO2的均匀材料。这样,第二层50b同样具有比基底14的折射率ns大的折射率n2。第三薄膜层50c为具有70nm的厚度t3的氟化镁(MgF2)的均匀材料。这样,第三层50c具有1.38的折射率n3(对于550nm的波长)。
在第三层50c的顶上设置线栅层22或线栅。线栅包括由铝制成的基元。基元可以具有144nm的周期P、周期的39.5%或57nm的宽度w,以及155nm的厚度twg或高度。
参考图4a-c,比较图3的偏振器10c的性能和在线栅与基底之间不具有薄膜层的相似的偏振器,以及在线栅与基底之间具有30nm的氟化镁(MgF2)层(因此具有比基底低的折射率的薄膜层)的相似的偏振器的性能。光12以45度的入射角入射在偏振器10c上。在该情况下,主要透射p偏振30,并主要反射s偏振34。参考图4a,如曲线54所示,穿过偏振器10c的p偏振的透射率比其它两种偏振器大(或p偏振从该偏振器的反射率较小)。虽然可以看到具有较低折射率的薄层的偏振器表现得比普通偏振器出色,但具有三个薄膜层50a-c的薄膜层的偏振器10c表现得更加出色。参考图4b,如曲线56所示,偏振器10c的s偏振光的透射率(泄漏量)比其它两种偏振器中的任何一种都小(或者穿过偏振器的s偏振的透射率较小)。参考图4c,如曲线58所示,偏振器10c的p偏振的反射率普遍比其它的偏振器小(或者p偏振的透射率较大)。最终结果为存在更多的透射的p偏振以及在透射和反射中的提高的对比度,这意味着多层偏振器10c的透射和反射的偏振的纯度更高。
参考图5,示出了多层线栅偏振器的另一实例10d。偏振器10d包括设置在具有铝的基元的线栅层22或线栅的顶部正上的两个介电层或两个介电栅60a和60b。线栅或线栅层22设置在玻璃(BK7)基底14上。线栅的基元26的厚度或高度twg为160nm。第一介电栅60a设置在线栅上,并具有100nm的厚度,且由折射率n1为1.45的氧化硅(SiO2)形成。第二介电栅60b也具有100nm的厚度t2并由折射率n2为2.5的材料形成。栅的周期P为144nm。基元的宽度为周期P的45%或57nm。光12以45度入射。
参考图6a和b,比较图5的偏振器10d的性能与在顶上没有介电栅的相似的偏振器的性能。因为栅的周期P比可见光的波长小,所以它们实质上全都起薄膜的作用。在图6a中,可以看出,对于偏振器10d,反射的s偏振基本上更大,如曲线62所示。在图6b中,可以看出,对于偏振器10d,透射的p偏振也更大,如曲线64所示。
参考图7,示出了多层线栅偏振器的另一实例10e。偏振器10e包括在线栅或线栅层22与玻璃(BK7)基底14之间的三个均匀薄膜层70a-c。第一层70a设置在基底14上,具有33nm厚的厚度t1,并具有1.8的折射率n1。第二层70b为具有1.38的折射率n2和30nm的厚度t2的氟化镁(MgF2)材料。第三层70c具有20nm的厚度t3,并具有1.8的折射率n3。这样,第一和第三层70a和c具有比基底14的折射率ns大的折射率n1和n3。线栅或线栅层22包括具有144nm的周期P的铝的基元。基元高度twg为160nm,并且基元的宽度w为周期的45%或者57nm。光12为法向入射(0度)。
参考图8,示出了多层线栅偏振器的另一实例10f。偏振器10e包括三个薄膜层80a-c,与上面描述的图7中的那些薄膜层相似,只是第一层80a具有28nm的厚度t1;第二层80b具有25nm的厚度t2;第三层80c具有17nm的厚度t3。另外,偏振器10f包括在线栅层22上方的薄膜层84。薄膜层84包括介电栅,其中非金属基元设置在线栅的金属基元上。线栅或线栅层22与上面描述的图7的线栅相似。介电层84的基元具有100nm的厚度t4。介电层84的基元由二氧化硅(SiO2)形成。
参考图9,比较偏振器10e和f的性能与没有薄膜层的相似的线栅偏振器的性能。如曲线86和88所示,偏振器10e和f都反射较少的p偏振(透过较多的p偏振)。如曲线88所示,具有在线栅层之下的薄膜层和在线栅上方的介电栅的偏振器10f表现出显著的改善。
参考图10a和b,示出了多层线栅偏振器的实例10g和h。偏振器10g和h都包括在基底14上设置的线栅或线栅层22。线栅可以包括铝的基元,并且基底可以是玻璃(BK7)。线栅的周期P为144nm,并且基元具有150nm的厚度twg。基元的宽度w为周期的45%或65nm。另外,基元26限定了其间的间隔92,间隔92包括具有1.17的折射率n1的材料。第二均匀层96设置在基元26和间隔92或线栅层22的顶上,并具有100nm的厚度t2和1.17的折射率n2。第三薄膜层100设置在第二层96之上。第三层100具有二氧化硅(SiO2)的均匀层和60nm的厚度t3。这样,第三层100具有1.45的折射率n3。第四层104设置在第三层100上,并包括具有非金属基元的介电栅。介电栅的基元具有50nm的厚度t4。介电栅的基元由二氧化硅(SiO2)形成并具有2.0的折射率n4。介电层的基元的宽度w为周期的50%。如图10a所示,介电层的基元设置在线栅的基本上正上方。可选地,介电层的基元可以相对于线栅的基元偏离,或者偏移半个周期,以便它们基本上在线栅的基元之间的间隔的上方,如图10b所示。光12以45度入射。
参考图11,比较偏振器10g和h的性能与在玻璃基底上仅具有线栅的相似的偏振器的性能。偏振器10g和h具有提高的s偏振的反射率,如曲线108(其彼此相互重叠)所示。另外,似乎当有效介质理论的条件适用时将介电栅与线栅的对准是不相关的。这些实例还表明可以结合并使用均匀层和介电层以获得利益。另外,这些实例论证了有效介质理论的原理。
参考图12,示出了多层线栅偏振器的另一示例10i。偏振器10i与图3的偏振器10c相似,但是包括具有复合基元的线栅或线栅层112。复合基元可以包括金属与非金属层的交替层。在美国专利No.6,532,111中可发现这样的复合基元的实例,在这里引用该专利作为参考。例如,每个基元可以包括铝与氟化镁的交替层。
参考图13,比较偏振器10i的性能与具有复合基元但在基底与线栅层之间不具有薄膜层的相似的偏振器的性能。如曲线116所示,偏振器10i具有s偏振的较少的泄漏量或者透射率。
参考图14,线栅层22与上述的线栅层相似,但是在线栅层的金属基元之间的间隔中具有介电材料120。这样的线栅或线栅层可以替代上述的任何一种。
参考图15,示出了具有两种介电栅124和128的介电栅层,该两种介电栅具有两种不同材料的基元,该两种不同材料分别具有两个不同的折射率n1和n2。因此,介电层或栅具有不同材料的交替基元,或在另一种栅的间隔中设置的一种栅的基元。这样的介电栅或层可以替代上述的任何一种。
这里介绍的实例只是可以由本发明实现的许多可能中的一些。通常,对于特定的应用例如优化在光的给定带的入射角的给定范围内的透射率或反射率,可以结合均匀层与介电栅的结合。可以对透射或反射或者两者一起进行优化。可以对在偏振器上从空气侧或从基底侧或者从这两侧的入射进行优化。
在美国专利5,986,730;6,081,376;6,122,103;6,208,463;6,243,199;6,288,840;6,348,995;6,108,131;6,452,724;6,710,921;6,234,634;6,447,120以及6,666,556中示出了线栅偏振器、光学组件(optial train)和/或投影/显示系统的各种方面,这里引用它们作为参考。
尽管已经将线栅偏振器示例为朝向光源或者其中细长基元朝向光源,应该理解这仅用于示例的目的。本领域的技术人员将理解,可以将线栅偏振器取向为例如从液晶阵列朝向成像承载梁(imaging bearing beam),用于避免使载像束(image bearing beam)穿过基底、从而避免与穿过介质例如基底的光相关联的重影或多次反射的简单目的。这样的配置可以产生背对着光源的线栅偏振器。
虽然上述实例是作为本发明的原理在一种或多种特定的应用中的示例,但对于本领域的普通技术人员而言,很显然,在不需创造性的劳动并且不偏离本发明的原理和构思的情况下,可以在实施的形式、用法和细节上进行许多修改。因此,本发明旨在仅受下面提出的权利要求的限制。
Claims (15)
1.一种用于使光偏振的线栅偏振器器件,包括:
a)基底;
b)至少两个薄膜层,设置在所述基底上,所述薄膜层具有彼此不同的折射率;
c)所述两个薄膜层中的至少一个的折射率大于所述基底的折射率;以及
d)线栅层,设置在所述至少两个薄膜层之上,所述线栅层包括其长度大于所述光的波长且其周期小于所述光的半波长的细长金属基元的阵列。
2.根据权利要求1的器件,其中所述薄膜层中的一个包括介电栅,所述介电栅包括非金属基元的阵列,所述阵列的所述非金属和金属基元被取向为彼此基本上平行,并且所述阵列具有基本上相等的周期。
3.根据权利要求1的器件,还包括设置在所述线栅层之上的至少一个薄膜层;所述至少一个其它的薄膜层包括介电栅,所述介电栅包括非金属基元的阵列,所述阵列的所述非金属和金属基元被取向为彼此基本上平行,并且所述阵列具有基本上相等的周期。
4.一种用于使光偏振的线栅偏振器器件,包括:
a)具有折射率的基底;
b)至少一个薄膜层,设置在所述基底上,所述薄膜层的折射率大于所述基底的折射率;以及
c)线栅层,设置在所述至少一个薄膜层之上,所述线栅层包括其长度大于所述光的波长且其周期小于所述光的半波长的细长金属基元的阵列。
5.根据权利要求4的器件,其中所述至少一个薄膜层包括介电栅,所述介电栅包括非金属基元的阵列,所述阵列的所述非金属和金属基元被取向为彼此基本上平行,并且所述阵列具有基本上相等的周期。
6.根据权利要求4的器件,还包括设置在所述线栅层之上的至少一个其它的薄膜层;所述至少一个其它的薄膜层包括介电栅,所述介电栅包括非金属基元的阵列,所述阵列的所述非金属和金属基元被取向为彼此基本上平行,并且所述阵列具有基本上相等的周期。
7.一种用于使光偏振的线栅偏振器器件,包括:
a)基底;
b)线栅层,设置在所述基底之上,所述线栅层包括其长度大于所述光的波长且其周期小于所述光的半波长的细长金属基元的阵列;
c)介电层,设置在所述线栅层之上,所述介电层包括非金属基元的阵列;以及
d)至少一个薄膜层,设置在所述线栅层与所述介电层之间。
8.根据权利要求7的器件,还包括设置在所述基底与所述线栅层之间的至少一个薄膜层;所述至少一个薄膜层包括具有彼此不同的折射率的多个薄膜层。
9.根据权利要求7的器件,还包括在所述基底与所述栅极层之间的其折射率大于所述基底的折射率的至少一个薄膜层。
10.根据权利要求7的器件,还包括在所述基底与所述线栅层之间的包括非金属基元的阵列的介电栅,所述阵列的所述非金属和金属基元被取向为彼此基本上平行,并且所述阵列具有基本上相等的周期。
11.一种用于使光偏振的线栅偏振器器件,包括:
a)基底;
b)薄膜层的叠层,设置在所述基底之上,并跨过所述基底连续地延伸;
c)所述薄膜层中的至少一个在结构和材料上是均匀的;
d)所述薄膜层中的至少一个包括其长度大于所述光的波长且其周期小于所述光的半波长的细长金属基元的线栅阵列;以及
e)所述薄膜层中的至少一个包括非金属基元的介电阵列。
12.根据权利要求11的器件,其中所述阵列的所述非金属和金属基元被取向为彼此基本上平行,并且所述阵列具有基本上相等的周期。
13.根据权利要求11的器件,还包括设置在所述基底与所述线栅阵列之间的至少一个薄膜层;所述至少一个薄膜层包括具有彼此不同的折射率的多个薄膜层。
14.根据权利要求11的器件,其中在所述基底与所述栅极层之间的所述薄膜层中的至少一个的折射率大于所述基底的折射率。
15.根据权利要求11的器件,其中所述阵列的所述非金属和金属基元被取向为彼此基本上平行,并且所述阵列具有基本上相等的周期。
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- 2005-12-05 CN CNA2005800418401A patent/CN101073024A/zh active Pending
- 2005-12-05 EP EP19177481.9A patent/EP3570081A1/en not_active Withdrawn
- 2005-12-05 JP JP2007544629A patent/JP4843617B2/ja active Active
- 2005-12-05 EP EP05853231.8A patent/EP1820051B1/en not_active Expired - Fee Related
- 2005-12-05 KR KR1020077013807A patent/KR101234986B1/ko active IP Right Grant
-
2009
- 2009-03-09 US US12/400,100 patent/US7813039B2/en not_active Expired - Fee Related
-
2010
- 2010-09-10 US US12/879,315 patent/US8027087B2/en not_active Expired - Fee Related
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2011
- 2011-09-16 US US13/234,444 patent/US20120008205A1/en not_active Abandoned
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102955190A (zh) * | 2011-08-26 | 2013-03-06 | 优志旺电机株式会社 | 偏振元件单元、其透射率设定方法及光照射装置 |
CN102323677A (zh) * | 2011-09-29 | 2012-01-18 | 上海丽恒光微电子科技有限公司 | 偏振分光器件及其形成方法 |
CN102323677B (zh) * | 2011-09-29 | 2013-06-19 | 上海丽恒光微电子科技有限公司 | 偏振分光器件及其形成方法 |
TWI472813B (zh) * | 2012-02-17 | 2015-02-11 | Nat Univ Tsing Hua | 反射式偏光片 |
CN105452916A (zh) * | 2013-08-07 | 2016-03-30 | 莫克斯泰克公司 | 多层吸收线栅偏振器 |
CN104865629A (zh) * | 2015-06-05 | 2015-08-26 | 京东方科技集团股份有限公司 | 一种反射型偏光片及液晶显示装置 |
WO2019006800A1 (zh) * | 2017-07-07 | 2019-01-10 | 深圳市华星光电技术有限公司 | 纳米线栅偏光片的制作方法 |
US10353239B2 (en) | 2017-07-07 | 2019-07-16 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Method of manufacturing nanowire grid polarizer |
CN113205746A (zh) * | 2020-10-01 | 2021-08-03 | 友达光电股份有限公司 | 具有混合式显示面板的显示装置和其形成方法 |
CN113205746B (zh) * | 2020-10-01 | 2022-09-20 | 友达光电股份有限公司 | 具有混合式显示面板的显示装置和其形成方法 |
Also Published As
Publication number | Publication date |
---|---|
US20090168171A1 (en) | 2009-07-02 |
KR101234986B1 (ko) | 2013-02-20 |
EP1820051A4 (en) | 2010-01-20 |
JP4843617B2 (ja) | 2011-12-21 |
US7570424B2 (en) | 2009-08-04 |
AU2005314134A1 (en) | 2006-06-15 |
WO2006063049A1 (en) | 2006-06-15 |
US20060119937A1 (en) | 2006-06-08 |
US20120008205A1 (en) | 2012-01-12 |
US20100328770A1 (en) | 2010-12-30 |
BRPI0518402A2 (pt) | 2008-11-18 |
EP3570081A1 (en) | 2019-11-20 |
EP1820051B1 (en) | 2019-07-03 |
KR20070092233A (ko) | 2007-09-12 |
US8027087B2 (en) | 2011-09-27 |
US7813039B2 (en) | 2010-10-12 |
EP1820051A1 (en) | 2007-08-22 |
JP2008523422A (ja) | 2008-07-03 |
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