CN101284643A - 一种制造微机电系统(mems)器件结构的方法 - Google Patents

一种制造微机电系统(mems)器件结构的方法 Download PDF

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CN101284643A
CN101284643A CNA2008100990491A CN200810099049A CN101284643A CN 101284643 A CN101284643 A CN 101284643A CN A2008100990491 A CNA2008100990491 A CN A2008100990491A CN 200810099049 A CN200810099049 A CN 200810099049A CN 101284643 A CN101284643 A CN 101284643A
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M·W·迈尔斯
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/001Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00388Etch mask forming
    • B81C1/00396Mask characterised by its composition, e.g. multilayer masks
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00Specific applications of microelectromechanical systems
    • B81B2201/04Optical MEMS
    • B81B2201/042Micromirrors, not used as optical switches
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00Basic microelectromechanical structures
    • B81B2203/03Static structures
    • B81B2203/0315Cavities
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00Manufacture or treatment of microstructural devices or systems
    • B81C2201/01Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102Surface micromachining
    • B81C2201/0105Sacrificial layer
    • B81C2201/0109Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00Forming microstructural systems
    • B81C2203/01Packaging MEMS
    • B81C2203/0136Growing or depositing of a covering layer

Abstract

本发明提供了一种制造微机电系统(MEMS)器件的方法,所述方法包括:在基底上沉积一个包括牺牲材料的层;将牺牲层形成图案;在牺牲层上沉积附加层;以及利用牺牲层作为光掩膜将附加层形成图案。该方法有助于减少在微机电系统器件制造过程所需的掩膜步骤的次数。

Description

一种制造微机电系统(MEMS)器件结构的方法
本申请是于2002年4月29日提交的名称为“一种制造微机电系统(MEMS)器件结构的方法”的中国专利申请02828414.3的分案申请。
技术领域
本发明涉及微制造技术。具体地,涉及微机电系统器件的结构的微制造。
背景技术
用来制造微机电系统器件的微制造技术通常包括在基底上沉积一个或多个层,然后在这些层上形成图案来制造有用的结构。一种在层上形成图案的技术涉及光刻术的使用。应用光刻术,在照片或光掩膜上所需图案的拍照内容被用于将图案传至该层表面上。制造微机电系统器件时经常需要几个掩膜步骤,每个掩膜步骤增加该器件的制造成本。因此,在微机电系统器件制造过程中,希望减少所需的掩膜步骤的次数。
发明内容
根据本发明的一个方面,提供了一种制造微机电系统(MEMS)器件的方法,所述方法包括:在基底上沉积一个包括牺牲材料的层;将所述牺牲层形成图案;在所述牺牲层上沉积附加层;以及利用所述牺牲层作为光掩膜将所述附加层形成图案。
根据本发明的进一步特征,所述方法包括去除所述牺牲层。
根据本发明的进一步特征,所述方法包括在所述基底上形成导电层,其中所述牺牲层形成于所述导电层之上,所述导电层是至少局部透光的,或者作为替代,所述导电层是充分透明的。
根据本发明的进一步特征,所述方法包括在所述牺牲层上形成上层,其中所述上层是导电的,或者作为替代,所述上层至少局部反射入射光。所述方法还可包括去除所述牺牲层以形成MEMS腔,且所述上层通过所述MEMS腔是可移动的,其中所述上层是在将所述附加层形成图案之后形成的,所述上层由形成图案的附加层的多个部分支撑。
根据本发明的进一步特征,在所述方法中所述附加层包括负效光刻胶,所述基底是至少局部透光的。
根据本发明的另一个方面,提供了一种形成微机电系统MEMS器件的方法,所述方法包括:提供透光的基底;在所述基底上提供牺牲层;将所述牺牲层形成图案以去除至少部分的所述牺牲层;在所述牺牲层上提供附加层;以及通过将所述附加层暴露在穿过所述牺牲层的被去除部分的光中,将所述附加层形成图案。
根据本发明的进一步特征,所述方法包括去除所述牺牲层的剩余部分。
根据本发明的进一步特征,所述方法包括提供下层,其中所述下层位于所述基底和所述牺牲层之间。至少部分所述下层是至少局部反光的,或者作为替代,至少部分所述下层是导电的,该导电部分对可见光是充分透明的。
根据本发明的进一步特征,所述方法包括在所述牺牲层上提供上层,其中至少部分所述上层对可见光是局部反射的,或者作为替代,至少部分所述上层是导电的。所述方法可进一步包括去除所述牺牲层的剩余部分以形成腔,在所述腔内所述上层是可移动的,且其中所述上层被提供在形成图案的附加层上并由形成图案的附加层支撑。在该方法中,所述上层可以包括铝或镍。
根据本发明的进一步特征,所述牺牲层可以由二氟化氙(XeF2)刻蚀。
根据本发明的进一步特征,所述牺牲层是不透光的。
根据本发明的进一步特征,将所述附加层形成图案包括利用所述牺牲层的剩余部分阻挡所述光。
根据本发明的再一个方面,提供了一种制造微机电系统MEMS阵列的方法,所述方法包括:在允许光从其中通过的基底上形成透明电极;在所述透明电极上形成牺牲层;在所述牺牲层上沉积附加层;以及通过将所述附加层暴露在穿过所述基底的光中,将所述附加层形成图案。
根据本发明的进一步特征,所述方法包括利用形成图案的附加层以产生所述阵列内的MEMS结构。
根据本发明的进一步特征,将所述附加层暴露在穿过所述基底的光中包括将所述附加层暴露在穿过所述基底的紫外光中。
根据本发明的又一个方面,提供了一种微制造工艺,其包括:在一个基底上沉积第一个层;将第一个层形成图案;再将第二个层沉积在第一个层上;并且利用第一个层作为光掩膜在第二个层上形成图案。
附图说明
图1表示微机电系统器件局部的三维视图,该器件可以用本发明的微制造工艺来生产制造。
图2至图10表示图1中微机电系统器件制造的各个阶段。
具体实施方式
本发明的各个方面将通过参考图2至图10来说明,图2至图10表示微机电系统器件,例如可见光谱调制器阵列或干涉调制器(IMOD)的制造过程的各个阶段,该可见光谱调制器阵列在美国专利5835255中作了说明,该干涉调制器(IMOD)在美国专利6040937中作了说明。自然地,通过参考可见光谱调制器阵列或干涉调制器的制造过程来描述本发明将更有助于对本发明的理解,而且应该理解本发明也可用于其它微机电系统器件的制造。因此,对本发明的说明参考可见光谱调制器阵列的制造或是干涉调制器的制造是不受其限制的。
图1表示一个可用在此所述技术进行制造的可见光谱调制器阵列10局部的实例。参考图1,一个天线阵列被制造在半个被微制造的干涉腔(interferometric cavity)之上,该干涉腔根据(a)腔的自身尺寸和(b)腔内绝缘镜(dielectric mirror)的频率响应来传输和反射入射的电磁射线中的特定部分。在图1中可见,阵列10有两个腔体12和14,它们被制造在透明基底16上。层18为初级镜/导体(the primarymirror/conductor),可包括一层或多层金属、氧化物、半导体和透明导体(transparent conductor)膜组合而成的。绝缘支撑件20支撑第二透明导电膜22。每个阵列元件都有形成在膜22上的天线阵列24。两个结构22和24一起包括二级镜/导体。相反地,天线阵列也可作为初级镜/导体的一部分来制造。其次,镜/导体22/24形成柔性膜,制造该柔性膜以使其处在张应力下,而于是在不受力的状态下平行于基底。
因为层22和24是平行的,从阵列上面或下面进入任何腔体的射线都能够在腔体内经过多次反射,导致光学干涉。干涉过程决定于天线阵列的尺寸,干涉将确定其反射和/或传输特性。改变其中一个尺寸,例如腔体的高度(也即在层18和层22内壁之间的间距)将会改变光学特性。高度的改变可以通过在腔体的两层之间加电压实现,因为静电力作用导致层22塌陷。图中腔体12是塌陷后的(用7伏电压),而腔体14是没有塌陷的(用0伏电压)。
在阵列10的制造过程中,需要绝缘支撑件20被很好地限定在这样的区域,其中在绝缘支撑件20和层18、层22之间形成接触。本发明对制造这样的支撑件特别有用。图2至图10给出了具有支撑物例如支撑件20的微机电系统器件的制造的不同阶段。参考附图中的图2,参考标号100所指的基底100。该基底100可以是很多不同材料,每种对紫外光都是透明的。这些材料的例子包括塑料,聚脂薄膜或石英。这些材料必须能够支撑光学平滑的,但不必是平面的涂复层(finish)。优选的材料可以是玻璃,在可见光的范围它同时可以进行透射和反射操作。
各种层在基底上堆叠构成一组复层,特别地,利用通常的技术例如物理汽相沉积法中的溅射与电子束蒸镀法将牺牲层102覆盖在基底100之上,其它方法还有化学汽相沉积和分子束外延附生法。
在图2中,牺牲层是一个单层。但是,在本发明的其它实施例中,层102可以是最上层为牺牲层的一组复层。
附图中图3给出了该微机电系统器件制造的一个阶段,其中牺牲层102已经被形成图案从而确定纵向间隔凹槽104。一个标准过程被用于在牺牲层102上形成图案,其包括通过适当的掩膜使层102曝光,并显影产生图案。
在附图的图4中,负效感光型(negative-acting-photosensitive)材料的感光聚合物材料可以是负光刻胶,被旋涂在牺牲层102上,厚度大于层100和102所确定的复层的总高度。此后,负效感光材料被暴露于通过基底100的紫外光,且利用常规的技术显影。因为只有纵向凹槽104是能使负效感光物质曝光的途径,而在复层之上的感光材料将会在接下来的显影过程中溶解,所以仅留下那些被排列在凹槽104内的感光材料形成的纵向脊106。因此,可以理解,首先对牺牲层102形成图案,再通过基底100和牺牲层102上的纵向凹槽104对负效感光材料进行曝光,牺牲层102用作光掩膜,因此可以在不需要额外的掩膜步骤下对负效感光材料进行光刻形成图案。在附图的图5中,结构层108被沉积在复层之上,而牺牲层102已经被除去,这样层108由脊106支撑。可以理解,通过使用不同的光掩膜,可以制造出任何想要的几何形状的支撑结构。因此,除了脊,在其它实施例中可以形成支柱或支杆。层108具有高传导性和反射性,通常含有铝和镍。
附图的图6给出了该微机电系统器件制造的随后一个阶段,其中层108被形成为横向延伸条的图案。附图中图7给出了在层108上沉积氧化物隔离层110的膜覆层。附图中图8给出该微机电系统器件制造过程的一个阶段,其中氧化物隔离层110已被形成图案。附图中图9给出微机电系统器件的一个制造阶段,其中密封膜112被施加压力粘合剂114于整个结构上,用来保护该结构不受机械震动载荷(shockloading)的损坏,尤其是防止颗粒对干涉调制器结构操作的干扰。密封膜112可以是各种材料,如薄金属膜,或者是覆盖有金属或氧化物以提供密封性能的聚合物膜。最后,图10给出是用二氟化氙气体洗涤,除去牺牲层102残留物后的结构。然后该结构的边缘被密封。
在其它的实施例中,除了氧化物层110,另一个负效感光材料层可被旋涂在氧化物层110上,且该负效感光材料通过基底100被曝光,利用上面所述的技术来形成更多组的支撑结构。这些支撑结构将为其它层提供支撑。可以理解,重复该工艺可以构造出具有多个层的微机电系统结构,或利用上面技术制造的支撑结构可以将这些层一个叠在另一个上,其中各层通过按照上述技术制造的支撑结构垂直间隔开来。本发明的一个优势是它提供了一种微制造技术,其可精确限定一个微机电系统器件中层与层之间的机械支撑件。这允许在支撑件和微机电系统器件内其它支撑件之间有整洁的、精确限定的机械连接。
进一步,本发明利用一个在基底上形成图案的层做为光掩膜来给另一个层形成图案,因此省去掩膜步骤。
虽然本发明是参考特定示例性实施例描述的,但是显然对这些实施例进行不同的修正和改变都不会偏离权利要求里所述的本发明的更广阔的精神。因此,说明书和附图只能被看作是说明性的,而非限制性的。

Claims (30)

1.一种制造微机电系统MEMS器件的方法,所述方法包括:
在基底上沉积至少一个层,所述层包括牺牲材料;
将所述牺牲层形成图案;
在所述牺牲层上沉积附加层;以及
利用所述牺牲层作为光掩膜将所述附加层形成图案。
2.根据权利要求1所述的方法,进一步包括去除所述牺牲层。
3.根据权利要求1所述的方法,进一步包括在所述基底上形成导电层,其中所述牺牲层形成于所述导电层之上。
4.根据权利要求3所述的方法,其中所述导电层是至少局部透光的。
5.根据权利要求3所述的方法,其中所述导电层是充分透明的。
6.根据权利要求1所述的方法,进一步包括在所述牺牲层上形成上层。
7.根据权利要求6所述的方法,其中所述上层是导电的。
8.根据权利要求6所述的方法,其中所述上层至少局部反射入射光。
9.根据权利要求6所述的方法,进一步包括去除所述牺牲层以形成MEMS腔,所述上层通过所述MEMS腔是可移动的。
10.根据权利要求9所述的方法,其中所述上层是在将所述附加层形成图案之后形成的,所述上层由形成图案的附加层的多个部分支撑。
11.根据权利要求1所述的方法,其中所述附加层包括负效光刻胶。
12.根据权利要求1所述的方法,其中所述基底是至少局部透光的。
13.一种形成微机电系统MEMS器件的方法,所述方法包括:
提供透光的基底;
在所述基底上提供牺牲层;
将所述牺牲层形成图案以去除至少部分的所述牺牲层;
在所述牺牲层上提供附加层;以及
通过将所述附加层暴露在穿过所述牺牲层的被去除部分的光中,将所述附加层形成图案。
14.根据权利要求13所述的方法,进一步包括去除所述牺牲层的剩余部分。
15.根据权利要求13所述的方法,进一步包括提供下层,其中所述下层位于所述基底和所述牺牲层之间。
16.根据权利要求15所述的方法,其中至少部分所述下层是至少局部反光的。
17.根据权利要求15所述的方法,其中至少部分所述下层是导电的。
18.根据权利要求17所述的方法,其中所述下层的导电部分对可见光是充分透明的。
19.根据权利要求13所述的方法,进一步包括在所述牺牲层上提供上层。
20.根据权利要求19所述的方法,其中至少部分所述上层对可见光是局部反射的。
21.根据权利要求19所述的方法,其中至少部分所述上层是导电的。
22.根据权利要求19所述的方法,进一步包括去除所述牺牲层的剩余部分以形成腔,在所述腔内所述上层是可移动的。
23.根据权利要求22所述的方法,其中所述上层被提供在形成图案的附加层上并由形成图案的附加层支撑。
24.根据权利要求19所述的方法,其中所述上层包括铝和镍。
25.根据权利要求13所述的方法,其中所述牺牲层可以由二氟化氙XeF2刻蚀。
26.根据权利要求13所述的方法,其中所述牺牲层是不透光的。
27.根据权利要求13所述的方法,其中将所述附加层形成图案进一步包括利用所述牺牲层的剩余部分阻挡所述光。
28.一种制造微机电系统MEMS阵列的方法,所述方法包括:
在基底上形成透明电极,所述基底允许光从其中通过;
在所述透明电极上形成牺牲层;
在所述牺牲层上沉积附加层;以及
通过将所述附加层暴露在穿过所述基底的光中,将所述附加层形成图案。
29.根据权利要求28所述的方法,进一步包括利用形成图案的附加层以产生所述阵列内的MEMS结构。
30.根据权利要求28所述的方法,其中将所述附加层暴露在穿过所述基底的光中包括将所述附加层暴露在穿过所述基底的紫外光中。
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US6794119B2 (en) 2004-09-21
US7250315B2 (en) 2007-07-31
ATE419561T1 (de) 2009-01-15
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US20030152872A1 (en) 2003-08-14
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