CN101285975B - Light sensing unit and pixel structure possessing the light sensing unit and liquid crystal display panel - Google Patents
Light sensing unit and pixel structure possessing the light sensing unit and liquid crystal display panel Download PDFInfo
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- CN101285975B CN101285975B CN2008100859626A CN200810085962A CN101285975B CN 101285975 B CN101285975 B CN 101285975B CN 2008100859626 A CN2008100859626 A CN 2008100859626A CN 200810085962 A CN200810085962 A CN 200810085962A CN 101285975 B CN101285975 B CN 101285975B
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Abstract
The invention discloses an optical sensing unit, a pixel structure and a liquid crystal display (LCD) panel which are provided with the optical sensing unit. The pixel structure is suitable for being arranged on a substrate and comprises a display unit and an optical sensing unit. The display unit comprises a driving element and a pixel electrode. The driving element is arranged on the substrate; the pixel electrode is electrically connected with the driving element. The optical sensing unit comprises a photo-current readout element, a photo-shield electrode, a photosensitive dielectric layer and a transparent electrode. The photo-shield electrode is electrically connected with the photo-current readout element; the photosensitive dielectric layer is arranged on the photo-shield electrode. The transparent electrode is arranged on the photosensitive dielectric layer, wherein, the photosensitive dielectric layer is clamped between the photo-shield electrode and the transparent electrode.
Description
Technical field
The invention relates to a kind of dot structure and display panel, and particularly relevant for a kind of dot structure and display panels with light sensing unit.
Background technology
Along with the progress of science and technology, also constantly development and its demand grow with each passing day the technology of display.It is early stage that (Cathode Ray Tube CRT) has excellent display quality and technology maturation, therefore monopolizes the monitor market all the year round owing to cathode-ray tube (CRT).Yet, recently because the rise of environmental protection notion, the big and bigger characteristic of generation radiant quantity of energy resource consumption based on cathode-ray tube (CRT), cathode-ray tube (CRT) adds that its product flattening space is limited, so can't satisfy the market trend of market for light, thin, short, little, U.S. and low consumpting power.Therefore, (Flat Panel Display FPD) replaces the thick and heavy negative electrode crt display of tradition to frivolous flat-panel screens gradually.Common flat-panel screens comprises plasma display (PlasmaDisplay Panel, PDP), LCD (Liquid Crystal Display, LCD) and Thin Film Transistor-LCD (Thin Film Transistor Liquid Crystal Display, TFT-LCD) etc., have wherein that high image quality, space utilization efficient are good, the Thin Film Transistor-LCD of low consumpting power, advantageous characteristic such as radiationless becomes the main flow in market gradually.
Thin Film Transistor-LCD is that (Thin Film Transistor, TFT) as active member, and thin film transistor (TFT) can be divided into amorphous silicon film transistor (a-Si TFT) and polycrystalline SiTFT (p-Si TFT) with thin film transistor (TFT).Polycrystalline SiTFT can be divided into low-temperature polysilicon film transistor (Low Temperature p-Si TFT) and high temperature polysilicon thin film transistor (TFT) (High Temperaturep-Si TFT) again.Normally (Low PressureChemical Vapor Deposition, LPCVD) and through the cycle of annealing more than 900 ℃, so the substrate of polycrystalline SiTFT LCD mostly is quartz material by low-pressure chemical vapor deposition in the formation of polysilicon.Yet, because the present substrate that mostly adopts glass to be used as the polycrystalline SiTFT LCD, and the glass substrate fusing point is about between 500 ℃ to 600 ℃, therefore develops low temperature polycrystalline silicon (Low Temperature p-Si, LTPS) technology.
Because the low temperature polycrystalline silicon technology has semiconductor element (as thin film transistor (TFT), optical diode etc.) is made in ability on the glass substrate, so existing document proposes to utilize the low temperature polycrystalline silicon technology to produce optical sensor and dot structure simultaneously on substrate, so that LCD not only has the function that image shows, also has the function of identification of fingerprint.
Fig. 1 is the synoptic diagram of existing a kind of optical sensor.Please refer to Fig. 1, existing optical sensor 10 belongs to a kind of PIN (just mixing/do not mix/negative the doping) diode, and this optical sensor 10 comprises substrate 12, active layers 14, protective seam 16 and contact 18.Wherein, active layers 14 comprises P type doped region 14a, intrinsic region (intrinsic region) 14c and N type doped region 14b.When user's finger presses was on optical sensor 10, backlight L2 can shine on finger, and can be shone intrinsic region 14c by the reflected light L1 of finger reflection.The energy of reflected light L1 can be absorbed by intrinsic region 14c, at this moment, can produce photocurrent in the PIN diode, and this photocurrent can be by contact 18 outputs.
Yet no matter whether user's finger presses on the optical sensor 10, optical sensor 10 all can be subjected to the irradiation of backlight L2.In other words, even under the situation of the irradiation that is not subjected to reflected light L1, optical sensor 10 still can be subjected to the irradiation of backlight L2 and produce photocurrent, so optical sensor 10 just can descend for the sensing sensitivity of reflected light L1.In addition, under most situation, the intensity of backlight L2 can be greater than the intensity of reflected light L1, and under the prolonged exposure of backlight L2, optical sensor 10 is difficult to sense the photocurrent variations that reflected light L1 is brought.
Hold above-mentioned, in above-mentioned optical sensor 10, since P type doped region 14a and N type doped region 14b be with dot structure in low-temperature polysilicon film transistor make in the lump, therefore, the doping content of P type doped region 14a and N type doped region 14b is subjected to the restriction of the low-temperature polysilicon film transistor in the dot structure easily.In other words, existing low temperature polycrystalline silicon processing procedure can't be taken into account the photoelectric characteristic of optical sensor 10 and the opering characteristic of electric apparatus of low-temperature polysilicon film transistor.
Summary of the invention
The invention provides a kind of dot structure, it has the shading electrode and covers the direct irradiation of backlight to light sensing unit, makes light sensing unit have good sensitivity.
The invention provides a kind of display panels, its dot structure has the shading electrode and covers the direct irradiation of backlight to light sensing unit, makes light sensing unit have good sensitivity.
The present invention proposes a kind of dot structure, and it is suitable for being configured on the substrate.Dot structure comprises a display unit and a light sensing unit.Display unit comprises an active member and a pixel electrode.Active member is disposed on the substrate, and pixel electrode and active member electrically connect.Light sensing unit comprises a photocurrent sensing element, a shading electrode, an actinodielectric layer and a transparency electrode.Shading electrode and photocurrent sensing element electrically connect, and actinodielectric layer is disposed on the shading electrode.Transparency electrode is disposed on the actinodielectric layer, and wherein actinodielectric layer is sandwiched between shading electrode and the transparency electrode.
In one embodiment of this invention, above-mentioned display unit comprises that more one is disposed at the reservior capacitor of pixel electrode below, and wherein reservior capacitor and active member electrically connect.
In one embodiment of this invention, above-mentioned active member is a first film transistor, and the photocurrent sensing element is one second thin film transistor (TFT).
In one embodiment of this invention, above-mentioned the first film transistor comprises one first polycrystalline SiTFT, and second thin film transistor (TFT) comprises one second polycrystalline SiTFT.
In one embodiment of this invention, the first above-mentioned polycrystalline SiTFT comprises one first polysilicon layer, a first grid insulation course, a first grid, one first protective seam, one source pole and a drain electrode.First polysilicon layer is disposed on the substrate, and wherein first polysilicon layer has one first source area, one first drain region and a first passage district, and the first passage district is positioned between first source area and first drain region.First grid insulation course is disposed on the substrate to cover first polysilicon layer.On the first grid configuration first grid insulation course, and be positioned at first polysilicon layer top.First protective seam is disposed on the first grid insulation course to cover first grid, and wherein first grid insulation course and first protective seam have a plurality of first contact openings with first source area and the exposure of first drain region.Wherein source electrode and drain electrode electrically connect with first source area and first drain region respectively through these first contact openings.
In one embodiment of this invention, the material of above-mentioned source electrode, drain electrode and shading electrode is identical in fact.
In one embodiment of this invention, the second above-mentioned polycrystalline SiTFT comprises one second polysilicon layer, one second gate insulation layer, a second grid and one second protective seam.Second polysilicon layer is disposed on the substrate, and wherein second polysilicon layer has one second source area, one second drain region and a second channel district, and the second channel district is positioned between second source area and second drain region.Second gate insulation layer is disposed on the substrate to cover second polysilicon layer.Second grid disposes on second gate insulation layer, and is positioned at second polysilicon layer top.Second protective seam is disposed on second gate insulation layer to cover second grid; wherein second gate insulation layer and second protective seam have a plurality of second contact openings so that second source area and second drain region are exposed, and shading electrode and second source area or the electric connection of second drain region.
In one embodiment of this invention, above-mentioned actinodielectric layer comprises a nano crystal material layer.
In one embodiment of this invention, above-mentioned nano crystal material layer comprises a silicic dielectric layer.
In one embodiment of this invention, the above-mentioned dielectric layer that is rich in silicon comprises the silicon oxide layer (SiOx) of a Silicon-rich, the silicon nitride layer (SiNy) of a Silicon-rich, the silicon oxynitride layer (SiOxNy) of a Silicon-rich, the oxidation of coal silicon layer (SiOxCz) of a Silicon-rich or the silicon carbide layer (SiCz) of a Silicon-rich.
In one embodiment of this invention, above-mentioned nano crystal material layer comprises the silicic dielectric layer with a laser crystallization mode tempering, forms a plurality of nanocrystals in this silicic dielectric layer.
The present invention proposes a kind of display panels, and it comprises an active component array base board, a subtend substrate and a liquid crystal layer.Active component array base board comprises multi-strip scanning line, many data lines and a plurality of dot structure.A plurality of dot structures, wherein each dot structure electrically connects with corresponding scanning line and data line respectively, and each dot structure comprises a display unit and a light sensing unit.Display unit comprises an active member and a pixel electrode.Active member is disposed on the substrate, and pixel electrode and active member electrically connect.Light sensing unit comprises a photocurrent sensing element, a shading electrode, an actinodielectric layer and a transparency electrode.Shading electrode and photocurrent sensing element electrically connect.Actinodielectric layer is disposed on the shading electrode.Transparency electrode is disposed on the actinodielectric layer, and wherein actinodielectric layer is sandwiched between shading electrode and the transparency electrode.The subtend substrate is disposed at the active component array base board top.Liquid crystal layer is disposed between active component array base board and the subtend substrate.
In one embodiment of this invention, above-mentioned display unit comprises that more one is disposed at the reservior capacitor of pixel electrode below, and wherein reservior capacitor and active member electrically connect.
In one embodiment of this invention, above-mentioned active member is a first film transistor, and the photocurrent sensing element is one second thin film transistor (TFT).
In one embodiment of this invention, above-mentioned the first film transistor comprises one first polycrystalline SiTFT, and second thin film transistor (TFT) comprises one second polycrystalline SiTFT.
In one embodiment of this invention, the first above-mentioned polycrystalline SiTFT comprises one first polysilicon layer, a first grid insulation course, a first grid, one first protective seam, one source pole and a drain electrode.First polysilicon layer is disposed on the substrate, and wherein first polysilicon layer has one first source area, one first drain region and a first passage district, and the first passage district is positioned between first source area and first drain region.First grid insulation course is disposed on the substrate to cover first polysilicon layer.On the first grid configuration first grid insulation course, and be positioned at first polysilicon layer top.First protective seam is disposed on the first grid insulation course to cover first grid, and wherein first grid insulation course and first protective seam have a plurality of first contact openings with first source area and the exposure of first drain region.Wherein source electrode and drain electrode electrically connect with first source area and first drain region respectively through these first contact openings.
In one embodiment of this invention, the material of above-mentioned source electrode, drain electrode and shading electrode is identical in fact.
In one embodiment of this invention, the second above-mentioned polycrystalline SiTFT comprises one second polysilicon layer, one second gate insulation layer, a second grid and one second protective seam.Second polysilicon layer is disposed on the substrate, and wherein second polysilicon layer has one second source area, one second drain region and a second channel district, and the second channel district is positioned between second source area and second drain region.Second gate insulation layer is disposed on the substrate to cover second polysilicon layer.Second grid disposes on second gate insulation layer, and is positioned at second polysilicon layer top.Second protective seam is disposed on second gate insulation layer to cover second grid; wherein second gate insulation layer and second protective seam have a plurality of second contact openings so that second source area and second drain region are exposed, and shading electrode and second source area or the electric connection of second drain region.
In one embodiment of this invention, above-mentioned actinodielectric layer comprises a nano crystal material layer.
In one embodiment of this invention, above-mentioned nano crystal material layer comprises a silicic dielectric layer.
In one embodiment of this invention, the above-mentioned dielectric layer that is rich in silicon comprises the silicon oxide layer (SiOx) of a Silicon-rich, the silicon nitride layer (SiNy) of a Silicon-rich, the silicon oxynitride layer (SiOxNy) of a Silicon-rich, the oxidation of coal silicon layer (SiOxCz) of a Silicon-rich or the silicon carbide layer (SiCz) of a Silicon-rich.
In one embodiment of this invention, above-mentioned nano crystal material layer nano crystal material layer comprises the silicic dielectric layer with a laser crystallization mode tempering, forms a plurality of nanocrystals in silicic dielectric layer.
In one embodiment of this invention, above-mentioned subtend substrate is a colored optical filtering substrates, and colored optical filtering substrates has a plurality of colored filter film.
In one embodiment of this invention, these above-mentioned colored filter film are disposed at these pixel electrode tops, and these transparency electrode tops do not have colored filter film.
In one embodiment of this invention, these above-mentioned colored filter film more are disposed at these pixel electrodes and these transparency electrodes top.
The present invention proposes a kind of light sensing unit, is suitable for being configured on the substrate.Light sensing unit comprises a photocurrent sensing element, a shading electrode, an actinodielectric layer and a transparency electrode.Shading electrode and photocurrent sensing element electrically connect.Actinodielectric layer has a plurality of nanocrystals, and is disposed on the shading electrode.Transparency electrode is disposed on the actinodielectric layer, and wherein actinodielectric layer is sandwiched between shading electrode and the transparency electrode.
Because the present invention adopts the shading electrode to cover the direct irradiation of backlight to light sensing unit, therefore the light sensing unit in dot structure of the present invention or the display panels has good sensitivity.
Describe the present invention below in conjunction with the drawings and specific embodiments, but not as a limitation of the invention.
Description of drawings
Fig. 1 is the synoptic diagram of existing a kind of optical sensor;
Fig. 2 is the synoptic diagram of a kind of dot structure of the present invention;
Fig. 3 is the enlarged diagram of the display unit of Fig. 2 dot structure;
Fig. 4 is the enlarged diagram of the light sensing unit of Fig. 2 dot structure;
Fig. 5 A be one embodiment of the invention display panels on look synoptic diagram;
Fig. 5 B is the sectional view that the profile line A-A ' along Fig. 5 A is illustrated;
Fig. 5 C is covered in the synoptic diagram of time reflection on the display panels for finger.
Wherein, Reference numeral
10: optical sensor
12,28: substrate
14: active layers
14a:P type doped region
14b:N type doped region
14c: intrinsic region
16: protective seam
18: contact
20: display panels
22: active component array base board
22a: sweep trace
22b: data line
22c: dot structure
24: the subtend substrate
26: liquid crystal layer
100: display unit
110: active member
110a: first polycrystalline SiTFT
112: the first polycrystalline silicon wafers
112a: first source area
112b: first drain region
112c: first passage district
114: first grid insulation course
116: first grid
118: the first protective seams
118a: first contact openings
120: source electrode
122: drain electrode
130: the pixel electrocution
150: reservior capacitor
200: light sensing unit
210: the photocurrent sensing element
210a: second polycrystalline SiTFT
212: the second polycrystalline silicon wafers
212a: second source area
212b: second drain region
212c: second channel district
214: the second gate insulation layers
216: second grid
218: the second protective seams
218a: second contact openings
230: the shading electrode
250: actinodielectric layer
270: transparency electrode
L1, L1 ': reflected light
L2, L2 ': backlight
Embodiment
Fig. 2 is the synoptic diagram of a kind of dot structure of the present invention.Please refer to Fig. 2, dot structure 22c is suitable for being configured on the substrate 28, and it comprises a display unit 100 and a light sensing unit 200.Display unit 100 comprises an active member 110 and a pixel electrode 130.Active member 110 is disposed on the substrate 28, and pixel electrode 130 electrically connects with active member 110.Light sensing unit 200 comprises a photocurrent sensing element 210, a shading electrode 230, one actinodielectric layer 250 and one transparency electrode 270.Shading electrode 230 electrically connects with photocurrent sensing element 210, and actinodielectric layer 250 is disposed on the shading electrode 230.Transparency electrode 270 is disposed on the actinodielectric layer 250, and wherein actinodielectric layer 250 is sandwiched between shading electrode 230 and the transparency electrode 270.
In the present embodiment, substrate 28 can be glass substrate, quartz base plate or plastic base.Pixel electrode 130 is identical in fact with the material of transparency electrode 270, its material can be tin indium oxide (IndiumTin Oxide, ITO), indium-zinc oxide or other transparent conductive material.The material of shading electrode 230 is generally metal and constitutes, it can be chromium (Cr), molybdenum (Mo), titanium (Ti), tungsten (W), aluminium (Al), copper (Cu) or gold (Au) etc., with and lamination or alloy, for example be titanium/aluminium/titanium (Ti/Al/Ti), or other metal material.In addition, actinodielectric layer 250 can be a nano crystal material layer.In the present embodiment, the nano crystal material layer comprises the dielectric layer of a high-load Silicon-rich or through with the silicic dielectric layer of laser crystallization mode, form a plurality of nanocrystals in silicic dielectric layer, it for example is the silicon oxide layer (SiOx) of a Silicon-rich, the silicon nitride layer (SiNy) of a Silicon-rich, the silicon oxynitride layer (SiOxNy) of a Silicon-rich, the oxidation of coal silicon layer (SiOxCz) of a Silicon-rich, silicon carbide layer (SiCz) or other material layer that is fit to of a Silicon-rich.Wherein, x, y, z are that x is preferably between 0.01～2 between 0.01～2, and y is preferably between 0.01～1.33, is preferably between 0.01～1, and needs ratio adjustment according to it.Have a plurality of high density nanocrystals in the actinodielectric layer 250 in wherein, the formation method of this actinodielectric layer 250 for example is the dielectric layer that forms Silicon-rich with the chemical vapor deposition (CVD) processing procedure, then with the laser crystallization mode, in actinodielectric layer 250, form nanocrystal, crystal particle diameter is approximately between 0.5nm～200nm (nanometer), and be preferably between the employed laser of 1nm～50nm and for example be to use excimer laser (Excimer Laser), its wavelength can be 308-350nm, or using continous way laser (CW laser), its wavelength can be 500-900nm.
Fig. 3 is the enlarged diagram of the display unit of Fig. 2 dot structure.Please also refer to Fig. 2 and Fig. 3, the display unit 100 of the dot structure 22c of present embodiment can comprise further that one is disposed at the reservior capacitor 150 of pixel electrode 130 belows, and wherein reservior capacitor 150 electrically connects with active member 110.In other words, the framework of the disclosed reservior capacitor 150 of present embodiment is that reservior capacitor 150 is formed at shared online (Cst on common).Yet the framework of the present invention and non-limiting reservior capacitor 150 is necessary for reservior capacitor 150 and is formed at common lines (Cst on common).In other embodiments, the framework of reservior capacitor 150 also can be reservior capacitor and is formed at scanning online (Cst on gate).
Specifically, refer again to Fig. 2 and Fig. 3, active member 110 for example be a first film transistor (Thin-film transistor, TFT).In the present embodiment; the first film transistor can be one first polycrystalline SiTFT 110a, and this first polycrystalline SiTFT 110a comprises one first polysilicon layer 112, a first grid insulation course 114, a first grid 116, one first protective seam 118, one source pole 120 and a drain electrode 122.First polysilicon layer 112 is disposed on the substrate 28, wherein first polysilicon layer 112 has one first source area 112a, one first drain region 112b and a first passage district 112c, and first passage district 112c is between the first source area 112a and the first drain region 112b.First grid insulation course 114 is disposed on the substrate 28 to cover first polysilicon layer 112.On the first grid 116 configuration first grid insulation courses 114, and be positioned at first polysilicon layer, 112 tops.First protective seam 118 is disposed on the first grid insulation course 114 to cover first grid 116; wherein the first grid insulation course 114 and first protective seam 118 have a plurality of first contact openings 118a so that the first source area 112a and the first drain region 112b are exposed, wherein source electrode 120 and drain and 122 see through these first contact openings 118a and electrically connect with the first source area 112a and the first drain region 112b respectively.In the present embodiment, the material of source electrode 120, drain electrode 122 is generally metal, its material material with shading electrode 230 in fact is identical, can be chromium (Cr), molybdenum (Mo), titanium (Ti), tungsten (W), aluminium (Al), copper (Cu) or gold (Au) etc., with and lamination or alloy, for example be titanium/aluminium/titanium (Ti/Al/Ti), or other metal material.
What deserves to be mentioned is, the first above-mentioned polycrystalline SiTFT 110a can be low-temperature polysilicon film transistor or high temperature polysilicon thin film transistor (TFT), present embodiment is to be that example describes with the low-temperature polysilicon film transistor, and it has low consumpting power, high electron mobility and effectively integrates advantages such as driving circuit.
Fig. 4 is the enlarged diagram of the light sensing unit of Fig. 2 dot structure.Please refer to Fig. 4, in the present embodiment, photocurrent sensing element 210 for example is one second thin film transistor (TFT), and second thin film transistor (TFT) can be one second polycrystalline SiTFT 210a.The second polycrystalline SiTFT 210a comprises one second polysilicon layer 212, one second gate insulation layer 214, a second grid 216 and one second protective seam 218.Second polysilicon layer 212 is disposed on the substrate 28, wherein second polysilicon layer 212 has one second source area 212a, one second drain region 212b and a second channel district 212c, and second channel district 212c is between the second source area 212a and the second drain region 212b.Second gate insulation layer 214 is disposed on the substrate 28 to cover second polysilicon layer 212.On second grid 216 configurations second gate insulation layer 214, and be positioned at second polysilicon layer, 212 tops.Second protective seam 218 is disposed on second gate insulation layer 214 to cover second grid 216; wherein second gate insulation layer 214 and second protective seam 218 have a plurality of second contact openings 218a so that the second source area 212a and the second drain region 212b are exposed, and shading electrode 230 electrically connects (Fig. 4 only illustrates shading electrode 230 and second source area 212a electric connection) with the second source area 212a or the second drain region 212b.What deserves to be mentioned is that the material of first protective seam 118 and second protective seam 218 for example is monox, silicon nitride or other insulating material.
Specifically, when the user will point or other placing object during in light sensing unit 200 tops, finger or the reflected light L1 ' that object caused can shine actinodielectric layer 250, at this moment, the energy of reflected light L1 ' can be absorbed by actinodielectric layer 250 and produce photocurrent, and this photocurrent can export photocurrent sensing element 210 to.Compared to prior art, present embodiment adopts shading electrode 230 to cover backlight L2 ', to avoid backlight L2 ' direct irradiation in actinodielectric layer 250, makes light sensing unit 200 significantly promote for the sensitivity of reflected light L1 '.
Fig. 5 A be one embodiment of the invention display panels on look synoptic diagram, and Fig. 5 B is the sectional view that the profile line A-A ' along Fig. 5 A is illustrated.Please also refer to Fig. 5 A and Fig. 5 B, display panels 20 comprises an active component array base board 22, a subtend substrate 24 and a liquid crystal layer 26.Active component array base board 22 comprises multi-strip scanning line 22a, many data line 22b and a plurality of dot structure 22c.Each dot structure 22c electrically connects with corresponding scanning line 22a and data line 22c respectively, and each dot structure 22c comprises a display unit 100 and a light sensing unit 200.Wherein display unit 100 is all same as the previously described embodiments with light sensing unit 200.Subtend substrate 24 is disposed at active component array base board 22 tops.Liquid crystal layer 26 is disposed between active component array base board 22 and the subtend substrate 24.
In order to make display panels 20 have the function that colorize shows, subtend substrate 24 can be a colored optical filtering substrates, and colored optical filtering substrates has a plurality of colored filter film.Colored filter film is disposed at these pixel electrode 130 tops, and these transparency electrode 270 tops can not have colored filter film (please refer to Fig. 4).In addition, colored filter film for example is the colored filter film of different colors such as redness, green or blueness.
Hold above-mentionedly, colored filter film is also configurable in these pixel electrodes 130 and these transparency electrodes 270 tops.Therefore, when light sensing unit 200 is preferable to the sensitivity of certain specific light, can see through the sensitivity that promotes light sensing unit 200 that is provided with of colored filter film.
Please also refer to Fig. 2 and Fig. 5 B, in the present embodiment, the active member 110 that display panels 20 adopts is respectively the first polycrystalline SiTFT 110a and the second polycrystalline SiTFT 210a with photocurrent sensing element 210, and the first polycrystalline SiTFT 110a and the second polycrystalline SiTFT 210a can be low-temperature polysilicon film transistors.Because in the present embodiment, utilize the shading electrode 230 of light sensing unit 200 to cover the direct irradiation of backlight L2 ' to light sensing unit 200, therefore and light sensing unit 200 has larger area optics sensing region, when display panels 20 is used for being used as fingerprint inductor/scanner usefulness preferably can be arranged.
Fig. 5 C is covered in the synoptic diagram of time reflection on the display panels for finger.Please also refer to Fig. 4 and Fig. 5 C, when finger or data to be scanned (Fig. 5 C only schematically illustrates finger and is covered on the display panels 20) when being covered on the display panels 20, liquid crystal layer 26 can be driven and have the state of high penetration, and the reflected light L1 ' that will penetrate liquid crystal layer 26 reflexes to light sensing unit 200.
When reflected light L1 ' reflexed to light sensing unit 200, reflected light L1 ' can be absorbed and produce photocurrent, and then, photocurrent sensing element 210 can output to the torrent of light that is detected the conversion that outside integrator is done electric current and voltage.At last, the voltage signal of output sees through the conversion of analog to digital and suitable image processing step, can finish fingerprint sensing and data scanning.
More specifically, sensing finger or the reflected light that data reflected to be scanned are when entering light sensing unit 200, the shading electrode 230 of dot structure 22c bottom can cover the direct irradiation of backlight L2 ' to light sensing unit 200, and the finger that is covered on the display panels 20 can cover noises such as external environment light, to increase the reaction of light signal.Compared to prior art, in the present embodiment,,, make light sensing unit 200 significantly promote for the sensitivity of reflected light L1 ' to avoid backlight L2 ' direct irradiation in actinodielectric layer 250 because shading electrode 230 covers backlight L2 '.In addition, because the present invention uses actinodielectric layer 250, therefore have better sensitometric characteristic, so the light sensing unit 200 of present embodiment has good sensitivity for reflected light L1 ' compared to existing traditional amorphous silicon layer or polysilicon layer.
In sum, dot structure and display panels proposed by the invention have following advantage at least:
One, the shading electrode of dot structure bottom and be covered in finger on the display panels and can isolate noises such as the direct irradiation of strong backlight and external environment light.
Two, when liquid crystal layer can be biased to the state with preferable penetrance, can increase the reaction of display panels light signal when induction or scanning.
Three, display panels has larger area optics sensing region, so it can have usefulness preferably when being used for being used as fingerprint inductor/scanner.
Four, display panels has advantages such as reliable luminous sensitivity and low cost.
Five, in part embodiment of the present invention, can make display panels have the function that colorize shows by colored optical filtering substrates.
Certainly; the present invention also can have other various embodiments; under the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art work as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection domain of the appended claim of the present invention.
Claims (23)
1. a dot structure is suitable for being configured on the substrate, it is characterized in that, this dot structure comprises:
One display unit comprises:
One active member is disposed on this substrate;
One pixel electrode electrically connects with this active member;
One light sensing unit comprises:
One photocurrent sensing element;
One shading electrode electrically connects with this photocurrent sensing element;
One silicic dielectric layer is disposed on this shading electrode;
One transparency electrode is disposed on this silicic dielectric layer, and wherein this silicic dielectric layer is sandwiched between this shading electrode and this transparency electrode.
2. dot structure according to claim 1 is characterized in that, wherein this display unit comprises that more one is disposed at the reservior capacitor of this pixel electrode below, and wherein this reservior capacitor and this active member electrically connect.
3. dot structure according to claim 1 is characterized in that, wherein this active member is a first film transistor, and this photocurrent sensing element is one second thin film transistor (TFT).
4. dot structure according to claim 3 is characterized in that, wherein this first film transistor comprises one first polycrystalline SiTFT, and this second thin film transistor (TFT) comprises one second polycrystalline SiTFT.
5. dot structure according to claim 4 is characterized in that, wherein this first polycrystalline SiTFT comprises:
One first polysilicon layer is disposed on this substrate, and wherein this first polysilicon layer has one first source area, one first drain region and a first passage district, and this first passage district is positioned between this first source area and this first drain region;
One first grid insulation course is disposed on this substrate to cover this first polysilicon layer;
One first grid disposes on this first grid insulation course, and is positioned at this first polysilicon layer top;
One first protective seam is disposed on the first grid insulation course to cover this first grid, and wherein this first grid insulation course and this first protective seam have a plurality of first contact openings so that this first source area and this first drain region are exposed;
One source pole;
One drain electrode, wherein this source electrode and should drain electrode see through those first contact openings and electrically connect with this first source area and this first drain region respectively.
6. dot structure according to claim 5 is characterized in that, wherein the material of this source electrode, this drain electrode and this shading electrode is identical in fact.
7. dot structure according to claim 4 is characterized in that, wherein this second polycrystalline SiTFT comprises:
One second polysilicon layer is disposed on this substrate, and wherein this second polysilicon layer has one second source area, one second drain region and a second channel district, and this second channel district is positioned between this second source area and this second drain region;
One second gate insulation layer is disposed on this substrate to cover this second polysilicon layer;
One second grid disposes on this second gate insulation layer, and is positioned at this second polysilicon layer top;
One second protective seam; be disposed on this second gate insulation layer to cover this second grid; wherein this second gate insulation layer and this second protective seam have a plurality of second contact openings so that this second source area and this second drain region are exposed, and this shading electrode and this second source area or the electric connection of this second drain region.
8. dot structure according to claim 1 is characterized in that, wherein this silicic dielectric layer comprises a nano crystal material layer.
9. dot structure according to claim 1 is characterized in that, wherein this dielectric layer that is rich in silicon comprises the silicon oxide layer of a Silicon-rich, the silicon nitride layer of a Silicon-rich, the silicon oxynitride layer of a Silicon-rich, the oxidation of coal silicon layer of a Silicon-rich or the silicon carbide layer of a Silicon-rich.
10. dot structure according to claim 8 is characterized in that, wherein this nano crystal material layer comprises the silicic dielectric layer with a laser crystallization mode tempering, forms a plurality of nanocrystals in this silicic dielectric layer.
11. a display panels is characterized in that, comprising:
One active component array base board comprises:
The multi-strip scanning line;
Many data lines;
A plurality of dot structures, wherein respectively this dot structure electrically connects with corresponding scanning line and data line respectively, and respectively this dot structure comprises:
One display unit comprises:
One active member is disposed on this substrate;
One pixel electrode electrically connects with this active member;
One light sensing unit comprises:
One photocurrent sensing element;
One shading electrode electrically connects with this photocurrent sensing element;
One silicic dielectric layer is disposed on this shading electrode;
One transparency electrode is disposed on this silicic dielectric layer, and wherein this silicic dielectric layer is sandwiched between this shading electrode and this transparency electrode;
One subtend substrate is disposed at this active component array base board top;
One liquid crystal layer is disposed between this active component array base board and this subtend substrate.
12. display panels according to claim 11 is characterized in that, wherein this display unit comprises that more one is disposed at the reservior capacitor of this pixel electrode below, and wherein this reservior capacitor and this active member electrically connect.
13. display panels according to claim 11 is characterized in that, wherein this active member is a first film transistor, and this photocurrent sensing element is one second thin film transistor (TFT).
14. display panels according to claim 13 is characterized in that, wherein this first film transistor comprises one first polycrystalline SiTFT, and this second thin film transistor (TFT) comprises one second polycrystalline SiTFT.
15. display panels according to claim 14 is characterized in that, wherein this first polycrystalline SiTFT comprises:
One first polysilicon layer is disposed on this substrate, and wherein this first polysilicon layer has one first source area, one first drain region and a first passage district, and this first passage district is positioned between this first source area and this first drain region;
One first grid insulation course is disposed on this substrate to cover this first polysilicon layer;
One first grid disposes on this first grid insulation course, and is positioned at this first polysilicon layer top;
One first protective seam is disposed on this first grid insulation course to cover this first grid, and wherein this first grid insulation course and this first protective seam have a plurality of first contact openings so that this first source area and this first drain region are exposed;
One source pole;
One drain electrode, wherein this source electrode and should drain electrode see through those first contact openings and electrically connect with this first source area and this first drain region respectively.
16. display panels according to claim 15 is characterized in that, wherein the material of this source electrode, this drain electrode and this shading electrode is identical in fact.
17. display panels according to claim 14 is characterized in that, wherein this second polycrystalline SiTFT comprises:
One second polysilicon layer is disposed on this substrate, and wherein this second polysilicon layer has one second source area, one second drain region and a second channel district, and this second channel district is positioned between this second source area and this second drain region;
One second gate insulation layer is disposed on this substrate to cover this second polysilicon layer;
One second grid disposes on this second gate insulation layer, and is positioned at this second polysilicon layer top;
One second protective seam; be disposed on second gate insulation layer to cover this second grid; wherein this second gate insulation layer and this second protective seam have a plurality of second contact openings so that second source area and this second drain region are exposed, and this shading electrode and second source area or the electric connection of this second drain region.
18. display panels according to claim 11 is characterized in that, wherein this silicic dielectric layer comprises a nano crystal material layer.
19. display panels according to claim 11, it is characterized in that wherein this dielectric layer that is rich in silicon comprises the silicon oxide layer of a Silicon-rich, the silicon nitride layer of a Silicon-rich, the silicon oxynitride layer of a Silicon-rich, the oxidation of coal silicon layer of a Silicon-rich or the silicon carbide layer of a Silicon-rich.
20. display panels according to claim 11 is characterized in that, wherein this nano crystal material layer comprises the silicic dielectric layer with a laser crystallization mode tempering, forms a plurality of nanocrystals in this silicic dielectric layer.
21. display panels according to claim 11 is characterized in that, wherein this subtend substrate is a colored optical filtering substrates, and this colored optical filtering substrates has a plurality of colored filter film.
22. display panels according to claim 21 is characterized in that, wherein those colored filter film are disposed at those pixel electrode tops, and those transparency electrode tops do not have colored filter film.
23. a light sensing unit is suitable for being configured on the substrate, it is characterized in that, this light sensing unit comprises:
One photocurrent sensing element;
One shading electrode electrically connects with this photocurrent sensing element;
One silicic dielectric layer has a plurality of nanocrystals, is disposed on this shading electrode;
One transparency electrode is disposed on this silicic dielectric layer, and wherein this silicic dielectric layer is sandwiched between this shading electrode and this transparency electrode.
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