CN101371314A - 减少非易失性存储装置的读取干扰 - Google Patents
减少非易失性存储装置的读取干扰 Download PDFInfo
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- CN101371314A CN101371314A CNA2006800460564A CN200680046056A CN101371314A CN 101371314 A CN101371314 A CN 101371314A CN A2006800460564 A CNA2006800460564 A CN A2006800460564A CN 200680046056 A CN200680046056 A CN 200680046056A CN 101371314 A CN101371314 A CN 101371314A
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
Abstract
Description
Claims (22)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/296,087 | 2005-12-06 | ||
US11/296,087 US7262994B2 (en) | 2005-12-06 | 2005-12-06 | System for reducing read disturb for non-volatile storage |
US11/295,776 | 2005-12-06 | ||
US11/295,776 US7349258B2 (en) | 2005-12-06 | 2005-12-06 | Reducing read disturb for non-volatile storage |
PCT/US2006/046126 WO2007067447A1 (en) | 2005-12-06 | 2006-11-30 | Reducing read disturb for non-volatile storage |
Publications (2)
Publication Number | Publication Date |
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CN101371314A true CN101371314A (zh) | 2009-02-18 |
CN101371314B CN101371314B (zh) | 2011-12-07 |
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Application Number | Title | Priority Date | Filing Date |
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CN2006800460564A Active CN101371314B (zh) | 2005-12-06 | 2006-11-30 | 减少非易失性存储装置的读取干扰 |
Country Status (2)
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US (4) | US7349258B2 (zh) |
CN (1) | CN101371314B (zh) |
Cited By (6)
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CN102103889A (zh) * | 2009-12-22 | 2011-06-22 | 英特尔公司 | Nand编程技术 |
CN102667948A (zh) * | 2009-11-11 | 2012-09-12 | 桑迪士克科技股份有限公司 | 减小存储器沟道与浮置栅极耦合的数据状态相关沟道升压 |
CN107408088A (zh) * | 2015-05-08 | 2017-11-28 | 桑迪士克科技有限责任公司 | 非易失性存储装置的快速读取 |
CN109716440A (zh) * | 2016-12-19 | 2019-05-03 | 桑迪士克科技有限责任公司 | 在3d存储器的读取恢复阶段期间减少热电子注入类型的读取干扰 |
CN111046445A (zh) * | 2018-10-11 | 2020-04-21 | 合肥沛睿微电子股份有限公司 | 加解密金钥产生方法 |
CN113035256A (zh) * | 2018-11-05 | 2021-06-25 | 长江存储科技有限责任公司 | 闪存器的数据读取方法及装置、存储设备 |
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US7349258B2 (en) * | 2005-12-06 | 2008-03-25 | Sandisk Corporation | Reducing read disturb for non-volatile storage |
US20080046630A1 (en) * | 2006-08-21 | 2008-02-21 | Sandisk Il Ltd. | NAND flash memory controller exporting a logical sector-based interface |
US20080046641A1 (en) * | 2006-08-21 | 2008-02-21 | Sandisk Il Ltd. | NAND flash memory controller exporting a logical sector-based interface |
US7616505B2 (en) * | 2006-12-28 | 2009-11-10 | Sandisk Corporation | Complete word line look ahead with efficient data latch assignment in non-volatile memory read operations |
US7616506B2 (en) * | 2006-12-28 | 2009-11-10 | Sandisk Corporation | Systems for complete word line look ahead with efficient data latch assignment in non-volatile memory read operations |
US7751237B2 (en) * | 2007-09-25 | 2010-07-06 | Sandisk Il, Ltd. | Post-facto correction for cross coupling in a flash memory |
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US9076544B2 (en) * | 2011-11-18 | 2015-07-07 | Sandisk Technologies Inc. | Operation for non-volatile storage system with shared bit lines |
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TWI490865B (zh) * | 2012-08-15 | 2015-07-01 | Phison Electronics Corp | 資料讀取方法、記憶體控制器與記憶體儲存裝置 |
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KR102081749B1 (ko) | 2013-02-20 | 2020-02-26 | 삼성전자주식회사 | 메모리 시스템 및 그것의 프로그램 방법 |
KR102068163B1 (ko) | 2013-02-27 | 2020-01-20 | 삼성전자주식회사 | 불휘발성 메모리 및 불휘발성 메모리의 동작 방법 |
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2005
- 2005-12-06 US US11/295,776 patent/US7349258B2/en active Active
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2006
- 2006-11-30 CN CN2006800460564A patent/CN101371314B/zh active Active
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2008
- 2008-01-29 US US12/021,761 patent/US7495956B2/en active Active
- 2008-01-29 US US12/021,741 patent/US7447065B2/en active Active
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Cited By (10)
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CN102667948A (zh) * | 2009-11-11 | 2012-09-12 | 桑迪士克科技股份有限公司 | 减小存储器沟道与浮置栅极耦合的数据状态相关沟道升压 |
CN102667948B (zh) * | 2009-11-11 | 2015-07-08 | 桑迪士克科技股份有限公司 | 减小存储器沟道与浮置栅极耦合的数据状态相关沟道升压 |
CN102103889A (zh) * | 2009-12-22 | 2011-06-22 | 英特尔公司 | Nand编程技术 |
CN102103889B (zh) * | 2009-12-22 | 2015-08-12 | 英特尔公司 | Nand编程技术 |
CN107408088A (zh) * | 2015-05-08 | 2017-11-28 | 桑迪士克科技有限责任公司 | 非易失性存储装置的快速读取 |
CN107408088B (zh) * | 2015-05-08 | 2020-10-16 | 桑迪士克科技有限责任公司 | 非易失性存储装置的快速读取 |
CN109716440A (zh) * | 2016-12-19 | 2019-05-03 | 桑迪士克科技有限责任公司 | 在3d存储器的读取恢复阶段期间减少热电子注入类型的读取干扰 |
CN109716440B (zh) * | 2016-12-19 | 2023-06-06 | 桑迪士克科技有限责任公司 | 在3d存储器的读取恢复阶段期间减少热电子注入类型的读取干扰 |
CN111046445A (zh) * | 2018-10-11 | 2020-04-21 | 合肥沛睿微电子股份有限公司 | 加解密金钥产生方法 |
CN113035256A (zh) * | 2018-11-05 | 2021-06-25 | 长江存储科技有限责任公司 | 闪存器的数据读取方法及装置、存储设备 |
Also Published As
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CN101371314B (zh) | 2011-12-07 |
US20070133295A1 (en) | 2007-06-14 |
US20080137424A1 (en) | 2008-06-12 |
US7447065B2 (en) | 2008-11-04 |
US7495956B2 (en) | 2009-02-24 |
US20080137411A1 (en) | 2008-06-12 |
US7440318B2 (en) | 2008-10-21 |
US7349258B2 (en) | 2008-03-25 |
US20080137423A1 (en) | 2008-06-12 |
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