CN101401199B - 含有连接表面层和衬底区域的部分soi结构制造方法 - Google Patents
含有连接表面层和衬底区域的部分soi结构制造方法 Download PDFInfo
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- CN101401199B CN101401199B CN2007800069289A CN200780006928A CN101401199B CN 101401199 B CN101401199 B CN 101401199B CN 2007800069289 A CN2007800069289 A CN 2007800069289A CN 200780006928 A CN200780006928 A CN 200780006928A CN 101401199 B CN101401199 B CN 101401199B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
- B81C1/00357—Creating layers of material on a substrate involving bonding one or several substrates on a non-temporary support, e.g. another substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
- B81C1/0038—Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
- B81C2201/019—Bonding or gluing multiple substrate layers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12674—Ge- or Si-base component
Abstract
Description
Claims (18)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0601696A FR2897982B1 (fr) | 2006-02-27 | 2006-02-27 | Procede de fabrication des structures de type partiellement soi, comportant des zones reliant une couche superficielle et un substrat |
FR0601696 | 2006-02-27 | ||
US83816206P | 2006-08-17 | 2006-08-17 | |
US60/838,162 | 2006-08-17 | ||
PCT/EP2007/051783 WO2007096426A1 (en) | 2006-02-27 | 2007-02-26 | Method for producing partial soi structures comprising zones connecting a superficial layer and a substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101401199A CN101401199A (zh) | 2009-04-01 |
CN101401199B true CN101401199B (zh) | 2011-07-27 |
Family
ID=37027695
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007800069289A Active CN101401199B (zh) | 2006-02-27 | 2007-02-26 | 含有连接表面层和衬底区域的部分soi结构制造方法 |
Country Status (8)
Country | Link |
---|---|
US (2) | US7709305B2 (zh) |
EP (1) | EP1989732A1 (zh) |
JP (1) | JP2009528675A (zh) |
KR (1) | KR101026387B1 (zh) |
CN (1) | CN101401199B (zh) |
FR (1) | FR2897982B1 (zh) |
SG (1) | SG169394A1 (zh) |
WO (1) | WO2007096426A1 (zh) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2876220B1 (fr) * | 2004-10-06 | 2007-09-28 | Commissariat Energie Atomique | Procede d'elaboration de structures empilees mixtes, a zones isolantes diverses et/ou zones de conduction electrique verticale localisees. |
US7629209B2 (en) * | 2005-10-17 | 2009-12-08 | Chunghwa Picture Tubes, Ltd. | Methods for fabricating polysilicon film and thin film transistors |
FR2897982B1 (fr) | 2006-02-27 | 2008-07-11 | Tracit Technologies Sa | Procede de fabrication des structures de type partiellement soi, comportant des zones reliant une couche superficielle et un substrat |
FR2926671B1 (fr) | 2008-01-17 | 2010-04-02 | Soitec Silicon On Insulator | Procede de traitement de defauts lors de collage de plaques |
US7927975B2 (en) | 2009-02-04 | 2011-04-19 | Micron Technology, Inc. | Semiconductor material manufacture |
CN104507853B (zh) | 2012-07-31 | 2016-11-23 | 索泰克公司 | 形成半导体设备的方法 |
US10224233B2 (en) | 2014-11-18 | 2019-03-05 | Globalwafers Co., Ltd. | High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed by He-N2 co-implantation |
EP3573094B1 (en) | 2014-11-18 | 2023-01-04 | GlobalWafers Co., Ltd. | High resistivity semiconductor-on-insulator wafer and a method of manufacturing |
CN107533953B (zh) * | 2015-03-03 | 2021-05-11 | 环球晶圆股份有限公司 | 具有可控膜应力的在硅衬底上沉积电荷捕获多晶硅膜的方法 |
CN107873106B (zh) | 2015-06-01 | 2022-03-18 | 环球晶圆股份有限公司 | 制造绝缘体上硅锗的方法 |
CN106653676B (zh) * | 2015-11-03 | 2019-12-24 | 中芯国际集成电路制造(上海)有限公司 | 衬底结构、半导体器件以及制造方法 |
CN108780776B (zh) | 2015-11-20 | 2023-09-29 | 环球晶圆股份有限公司 | 使半导体表面平整的制造方法 |
CN116314384A (zh) | 2016-06-08 | 2023-06-23 | 环球晶圆股份有限公司 | 具有经改进的机械强度的高电阻率单晶硅锭及晶片 |
US10269617B2 (en) | 2016-06-22 | 2019-04-23 | Globalwafers Co., Ltd. | High resistivity silicon-on-insulator substrate comprising an isolation region |
FR3076292B1 (fr) * | 2017-12-28 | 2020-01-03 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de transfert d'une couche utile sur un substrat support |
CN112262467A (zh) | 2018-06-08 | 2021-01-22 | 环球晶圆股份有限公司 | 将硅薄层移转的方法 |
FR3086096B1 (fr) * | 2018-09-14 | 2021-08-27 | Soitec Silicon On Insulator | Procede de realisation d'un substrat avance pour une integration hybride |
FR3136317A1 (fr) | 2022-06-01 | 2023-12-08 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procédé de fabrication d’une puce photonique |
CN115947299A (zh) * | 2022-12-21 | 2023-04-11 | 上海芯物科技有限公司 | 一种表面加工工艺和半导体器件 |
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FR2579809B1 (fr) * | 1985-04-02 | 1987-05-15 | Thomson Csf | Procede de realisation de matrices decommande a diodes pour ecran plat de visualisation electro-optique et ecran plat realise par ce procede |
JP2698147B2 (ja) * | 1989-02-10 | 1998-01-19 | 三洋電機株式会社 | Soi構造の形成方法 |
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FR2781925B1 (fr) * | 1998-07-30 | 2001-11-23 | Commissariat Energie Atomique | Transfert selectif d'elements d'un support vers un autre support |
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FR2795554B1 (fr) | 1999-06-28 | 2003-08-22 | France Telecom | Procede de gravure laterale par trous pour fabriquer des dis positifs semi-conducteurs |
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JP2004319538A (ja) * | 2003-04-10 | 2004-11-11 | Seiko Epson Corp | 半導体装置の製造方法、集積回路、電子光学装置及び電子機器 |
US7049660B2 (en) | 2003-05-30 | 2006-05-23 | International Business Machines Corporation | High-quality SGOI by oxidation near the alloy melting temperature |
JP4167565B2 (ja) * | 2003-07-31 | 2008-10-15 | 株式会社東芝 | 部分soi基板の製造方法 |
FR2875947B1 (fr) | 2004-09-30 | 2007-09-07 | Tracit Technologies | Nouvelle structure pour microelectronique et microsysteme et procede de realisation |
FR2876220B1 (fr) * | 2004-10-06 | 2007-09-28 | Commissariat Energie Atomique | Procede d'elaboration de structures empilees mixtes, a zones isolantes diverses et/ou zones de conduction electrique verticale localisees. |
KR100566675B1 (ko) * | 2004-12-14 | 2006-03-31 | 삼성전자주식회사 | 반도체 장치와 그 제조 방법 |
US7524707B2 (en) * | 2005-08-23 | 2009-04-28 | Freescale Semiconductor, Inc. | Modified hybrid orientation technology |
FR2897982B1 (fr) | 2006-02-27 | 2008-07-11 | Tracit Technologies Sa | Procede de fabrication des structures de type partiellement soi, comportant des zones reliant une couche superficielle et un substrat |
-
2006
- 2006-02-27 FR FR0601696A patent/FR2897982B1/fr active Active
-
2007
- 2007-02-12 US US11/673,820 patent/US7709305B2/en active Active
- 2007-02-26 EP EP07712320A patent/EP1989732A1/en not_active Withdrawn
- 2007-02-26 KR KR1020087022815A patent/KR101026387B1/ko active IP Right Grant
- 2007-02-26 JP JP2008555804A patent/JP2009528675A/ja active Pending
- 2007-02-26 WO PCT/EP2007/051783 patent/WO2007096426A1/en active Application Filing
- 2007-02-26 CN CN2007800069289A patent/CN101401199B/zh active Active
- 2007-02-26 SG SG201100886-9A patent/SG169394A1/en unknown
-
2010
- 2010-03-24 US US12/730,636 patent/US8044465B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR101026387B1 (ko) | 2011-04-07 |
CN101401199A (zh) | 2009-04-01 |
JP2009528675A (ja) | 2009-08-06 |
US7709305B2 (en) | 2010-05-04 |
US8044465B2 (en) | 2011-10-25 |
FR2897982A1 (fr) | 2007-08-31 |
WO2007096426A1 (en) | 2007-08-30 |
US20070200144A1 (en) | 2007-08-30 |
US20100176397A1 (en) | 2010-07-15 |
EP1989732A1 (en) | 2008-11-12 |
FR2897982B1 (fr) | 2008-07-11 |
SG169394A1 (en) | 2011-03-30 |
KR20080098424A (ko) | 2008-11-07 |
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