CN101477956B - Encapsulation structure and method for tablet reconfiguration - Google Patents
Encapsulation structure and method for tablet reconfiguration Download PDFInfo
- Publication number
- CN101477956B CN101477956B CN2008100016536A CN200810001653A CN101477956B CN 101477956 B CN101477956 B CN 101477956B CN 2008100016536 A CN2008100016536 A CN 2008100016536A CN 200810001653 A CN200810001653 A CN 200810001653A CN 101477956 B CN101477956 B CN 101477956B
- Authority
- CN
- China
- Prior art keywords
- small pieces
- substrate
- material layer
- polymer material
- those
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 57
- 238000005538 encapsulation Methods 0.000 title claims description 39
- 239000010410 layer Substances 0.000 claims abstract description 99
- 238000004806 packaging method and process Methods 0.000 claims abstract description 82
- 239000002861 polymer material Substances 0.000 claims abstract description 75
- 239000000463 material Substances 0.000 claims abstract description 74
- 239000004568 cement Substances 0.000 claims abstract description 58
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 58
- 239000011241 protective layer Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims description 94
- 239000002184 metal Substances 0.000 claims description 75
- 238000012856 packing Methods 0.000 claims description 18
- 239000013078 crystal Substances 0.000 claims description 6
- 235000012431 wafers Nutrition 0.000 description 43
- 238000005520 cutting process Methods 0.000 description 41
- 230000008569 process Effects 0.000 description 17
- 238000012545 processing Methods 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000000576 coating method Methods 0.000 description 7
- 230000008878 coupling Effects 0.000 description 7
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 229920000800 acrylic rubber Polymers 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 229920000058 polyacrylate Polymers 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229920002379 silicone rubber Polymers 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- 239000011888 foil Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 239000003086 colorant Substances 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 229920002050 silicone resin Polymers 0.000 description 3
- 239000004945 silicone rubber Substances 0.000 description 3
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229920001688 coating polymer Polymers 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- NHDHVHZZCFYRSB-UHFFFAOYSA-N pyriproxyfen Chemical compound C=1C=CC=NC=1OC(C)COC(C=C1)=CC=C1OC1=CC=CC=C1 NHDHVHZZCFYRSB-UHFFFAOYSA-N 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/19—Manufacturing methods of high density interconnect preforms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/241—Disposition
- H01L2224/24135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/24137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3511—Warping
Abstract
The invention relates to a chip reallocated packaging structure which comprises a chip and a plurality of weld pads allocated on the active surface of the chip; a packaging body is used for packaging the chip and exposing the weld pads; a polymer material layer with at least one seam covers the active surface of the chip, and each weld pad is exposed from the seam; one ends of a plurality of fanned-out wire sections are electrically connected every weld pad; a protective layer is used for covering the active surface of the chip and every wire section and exposing the other ends of the wire sections; and a plurality of electrically connected elements are electrically connected with the other ends of the wire sections, wherein, the packaging body adopts a two-stage thermosetting cement material.
Description
Technical field
The invention relates to a kind of method for packing semiconductor, particularly relevant for a kind of small pieces or many small pieces are reconfigured to another substrate after, reconfigure layer (RDL) and form modular encapsulating structure and method for packing thereof through using again.
Background technology
Semi-conductive technology has developed suitable rapidly; Therefore microminiaturized semiconductor chip (Dice) must have the demand of diversified function; Make semiconductor chip must in very little zone, dispose more I/o pad (I/O pads), thereby make the density of metal pin (pins) also improve fast.Therefore, early stage leaded package technology has been not suitable for the high-density metal pin; So develop the encapsulation technology that a kind of ball array (Ball Grid Array:BGA), the ball array encapsulation is except having than the more highdensity advantage of leaded package, and its tin ball also relatively is not easy infringement and distortion.
Popular along with 3C Product; For example: mobile phone (Cell Phone), PDA(Personal Digital Assistant) or iPod etc.; All must the System on Chip/SoC of many complicacies be put into a very little space; Therefore be this problem of solution, a kind of being called " wafer-level packaging (wafer level package; WLP) " encapsulation technology develops out, and it can just encapsulate wafer earlier before cutting crystal wafer becomes many small pieces.The U.S. the 5th, 323, No. 051 patent has promptly disclosed this " wafer-level packaging " technology.Yet; This " wafer-level packaging " technology is along with the increase of the weld pad on the small pieces active face (pads) number; Make that the spacing of weld pad (pads) is too small, except meeting causes the problem of signal coupling or signal interference, also can cause the problems such as reliability reduction of encapsulation because the weld pad spacing is too small.Therefore, when small pieces again after the dwindling further, make aforesaid encapsulation technology all can't satisfy.
For solving this problem, the U.S. the 7th, 196; No. 408 patent has disclosed a kind of wafer that will accomplish manufacture of semiconductor, after test and cutting, is that good small pieces (good die) reappose on another substrate with test result; And then carry out encapsulation procedure, so, make these had the spacing of broad between the small pieces that reappose; So can be with the weld pad suitable dispensing on the small pieces; For example use horizontal expansion (or fan-out) (fan out) technology, therefore can effectively solve because of spacing too small, the problem that causes signal coupling or signal to disturb except meeting.
Yet; For making semiconductor chip that less and thin encapsulating structure can be arranged, before carrying out the wafer cutting, can carry out thinning to wafer earlier and handle; For example grind (backside lapping) mode with wafer thinning to 2～20mil, and then cut into many small pieces with the back of the body.These small pieces through the thinning processing through reconfiguring on another substrate, form a packaging body with injection molded with a plurality of small pieces again; Because small pieces are very thin, make that packaging body also is very thin, so after packaging body disengaging substrate, the stress of packaging body itself can make packaging body generation warpage increases follow-up difficulty of cutting processing procedure.
In addition, after wafer cutting, reconfigure in another size small pieces during than the also big substrate of the size of original substrate; Owing to need small pieces be picked up,, the active face of small pieces is attached on the substrate to cover crystal type then with after the small pieces upset via fetching device (pick&place); And in the process of fetching device with the small pieces upset; Can produce inclination (tilt) easily and cause displacement, for example: tilt to surpass 5 microns, so can make small pieces to aim at; And then make follow-up planting in the ball processing procedure also can't aim at, and cause the reliability of encapsulating structure to reduce.
For this reason; It is a kind of before carrying out the wafer cutting that the present invention provides; The method for packing that forms registration mark (alignment mark) and cooperate small pieces to reconfigure earlier at the back side of wafer, it can solve effectively can't aim at when planting ball and packaging body produces the problem of warpage.
Summary of the invention
Because plant that ball is aimed at and the problem of packaging body warpage described in the background of invention, encapsulating structure and method thereof that the present invention provides a kind of small pieces that utilize the wafer alignment sign to reconfigure, the method that a plurality of small pieces are configured again and encapsulate.So main purpose of the present invention providing a kind of two stage hot-setting adhesives to cover the method for packing of small pieces, can effectively improve the yield and the reliability of manufacturing.
Another main purpose of the present invention is at the method for packing that provides a kind of small pieces to reconfigure; It can be reconfigured in the small pieces that 12 inch wafers are cut out on the substrate of 8 inch wafers; So can effectively use the existing sealed in unit of 8 inch wafers; And need not to re-establish the sealed in unit of 12 inch wafers, can reduce the packaging cost of 12 inch wafers.
Of the present invention also have a main purpose at the method for packing that provides a kind of small pieces to reconfigure, and makes the chip that encapsulates all be " known be normally functioning chip " (Known good die), can save encapsulating material, so also can reduce the cost of processing procedure.
According to above encapsulating structure; The method for packing that the present invention provides a kind of small pieces to reconfigure comprises: one first substrate is provided; Have a upper surface and a lower surface; Configuration one polymer material layer on its upper surface, and polymer material layer forms a plurality of zones and each zone comprises at least one seam (slit); A plurality of small pieces are provided, and each small pieces has an active face and a back side, and on active face, disposes a plurality of weld pads; Then, with on the zone covering crystal type and be seated in polymer material layer, and make a plurality of weld pads the active face of each these small pieces in alignment with seam; One second substrate is provided, configuration one two-stage thermosetting cement material on it; Form a packaging body, second substrate and two-stage thermosetting cement material are engaged with the upper surface of first substrate, so that two-stage thermosetting cement material coats each small pieces; Then, carry out a baking program, so that should two-stage thermosetting cement material be solidified to form the packaging body that solidifies; Break away from packaging body and those weld pad of this first substrate to expose curing; Form the metal wire sections of many fan-outs, an end of each metal wire sections and weld pad electrically connect; Form a protective layer, with active face and each metal wire sections that covers each small pieces and the other end that exposes each metal wire sections; Forming a plurality of electric connection elements, is the other end electric connection with a plurality of electric connection elements and each metal wire sections; And the cutting packaging body, to form a plurality of small pieces of independently accomplishing encapsulation separately.
The encapsulating structure that the present invention also provides a kind of small pieces to reconfigure comprises: small pieces also dispose a plurality of weld pads on its active face; Packaging body is in order to coat small pieces and to expose active face; The polymer material layer of at least one seam is covered on the active face of small pieces and by seam and exposes each weld pad; One end of the metal wire sections of many fan-outs and each weld pad electrically connect; Protective layer used with active face and each the strip metal line segment that covers small pieces and the other end that exposes these metal wire sections; The other end of a plurality of electric connection elements and each strip metal line segment electrically connects, and wherein, packaging body is a kind of two-stage thermosetting cement material.
The encapsulating structure that the present invention also provides another kind of small pieces to reconfigure; Comprise: many small pieces and each these small pieces have an active face and a lower surface and on this active face, dispose a plurality of weld pads; One packaging body is in order to coat these small pieces and to expose this active face; The polymer material layer of one tool, one opening is covered on the active face of these small pieces and by this opening part and exposes this a plurality of weld pads; One end of the metal wire sections of many fan-outs and those weld pads electrically connect; The one protective layer used other end with the active face and those metal wire sections that cover these small pieces and the other end that exposes those metal wire sections and a plurality of electric connection elements and those metal wire sections electrically connects, and wherein, packaging body is a two-stage thermosetting cement material.
Description of drawings
For let above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, elaborate below in conjunction with the accompanying drawing specific embodiments of the invention, wherein:
Fig. 1 is the sketch map of prior art;
Fig. 2 A to Fig. 2 B be according to the present invention to be disclosed in the front of wafer with registration mark and the vertical view of the encapsulating structure at the back side;
Fig. 3 to Fig. 8 is the cutaway view according to the encapsulation process of one embodiment of the invention;
Fig. 9 to Figure 13 B is the cutaway view of encapsulation process according to another embodiment of the present invention;
Figure 14 to Figure 15 is according to the cutaway view of the encapsulation process of an embodiment more of the present invention;
Figure 16 to Figure 20 is according to the cutaway view of the encapsulation process of an embodiment more of the present invention; And
Figure 21 is according to modular packaging body of the present invention.
The main element symbol description:
20 substrates
30 polymer material layers/photosensitive material layer
The opening of 32 photosensitive material layers
40 wafers
The front of 40A wafer
The back side of 40B wafer
60 substrates
70 two-stage thermosetting cement materials
The 70A packaging body
80 protective layers
The opening of 82 protective layers
90 metal wire sections
200 adhesion coatings
100 substrates
402 registration marks
410 small pieces
412 weld pads
414 Cutting Roads
420 electrically connect element
500 die devices
700 polymer material layers
Embodiment
The present invention is the method for packing that a kind of small pieces reconfigure in this direction of inquiring into, many small pieces is reconfigured on another substrate the method that encapsulates then.In order to understand the present invention up hill and dale, detailed step and composition thereof will be proposed in following description.Apparently, execution of the present invention does not limit the specific details that the operator had the knack of of chip-stacked mode.On the other hand, the detailed step of back-end process such as well-known chip generation type and chip thinning is not described in the details, with the restriction of avoiding causing the present invention unnecessary.Yet, for preferred embodiment of the present invention, can describe in detail as follows, yet except these were described in detail, the present invention can also be implemented among other the embodiment widely, and scope of the present invention constrained not, it is as the criterion with claims.
In the semiconductor packing process in modern times, all are wafers (wafer) of having accomplished FEOL (Front EndProcess) with one, form a thin insulating barrier in the front of wafer earlier and (for example form a SiO
2Layer), and then carry out thinning earlier and handle (Thinning Process), for example the thickness with chip is ground between 2～20mil; Then, the cutting (sawing process) of carrying out wafer is to form many small pieces 110; Then, use fetching device (pick and place) that many small pieces are positioned on another substrate 100 one by one, as shown in Figure 1.Clearly, the platelets zone on the substrate 100 is bigger than small pieces 110, therefore, and can be so that these be by 110 spacings with broad of small pieces of being reapposed, so can be with the weld pad suitable dispensing on the small pieces 110.In addition; The employed method for packing of present embodiment; Can the small pieces 110 that 12 inch wafers are cut out be reconfigured on the substrate of 8 inch wafers; So can effectively use the existing sealed in unit of 8 inch wafers, and need not to re-establish the sealed in unit of 12 inch wafers, can reduce the packaging cost of 12 inch wafers.Be stressed that then; Embodiments of the invention do not limit the substrate that uses 8 inch wafers size; As long as it can provide the function of carrying; For example: glass, quartz, pottery, circuit board or sheet metal (metal foil) etc., all can be used as the substrate 100 of present embodiment, so the shape of substrate 100 does not limit yet.
At first, Fig. 2 A and Fig. 2 B, its expression has the vertical view of the wafer of registration mark.Shown in Fig. 2 A, its upper surface 40A that is illustrated in wafer 40 is formed with a plurality of small pieces 110, and on the X-Y direction of the back side 40B of each small pieces 410 of wafer 40, is provided with a plurality of registration marks (alignmentmark) 402, shown in Fig. 2 B.Learn by prior statement; After wafer 40 warp cuttings, form a plurality of small pieces 410, when reconfiguring to another substrate 100 again, because the platelets zone between the new substrate 100 is bigger than small pieces 410; Therefore in the process that picks and places small pieces 410; Be easy to generate skew, and understand and to aim at, and cause the reliability of encapsulating structure to reduce in the ball step (ball mount) of planting of follow-up encapsulation procedure.Therefore in this specific embodiment,, wafer 40, forms a plurality of registration marks 402 at the back side of wafer 40 40B and X-Y direction then up earlier before cutting at the back side of each small pieces with the back side 40B of wafer.Then carry out the wafer cutting step, and the back side that makes each small pieces 410 up; Follow again, use fetching device (in figure, not showing) that each small pieces 410 is picked up and is positioned on the substrate 100; Because, all disposed registration mark 402 on the back side of each small pieces 410, therefore, fetching device can directly pick out weld pad 412 positions on each small pieces 410 its active face; When fetching device will be positioned over small pieces 410 on the substrate; Can relend the relative position that calculates small pieces 410 by the reference point on the substrate (in figure, not showing); Adding fetching device therefore need can accurately not be positioned over small pieces 410 small pieces 410 upsets on the substrate 100.So when a plurality of small pieces 410 reconfigured in 100 last times of new substrate, just can be because of can't not aligning and the problem of accuracy and reliability.At this; The mode that forms registration mark 402 can be utilized photoetch (photo-etching) processing procedure; On the X-Y direction of the back side of wafer 40 40B, form a plurality of registration marks 402; And its shape can be random geometry, and in a preferred embodiment, this geometry is the sign of cross.In addition, the mode that forms registration mark 402 also comprises utilizes laser tag (laser mark) processing procedure, and 40B forms a plurality of registration marks 402 at the back side of wafer 40.
And then, please refer to Fig. 3, it is the generalized section of a specific embodiment of the present invention.As shown in Figure 3, at first, on substrate 20, dispose a polymer material layer 30, this polymer material layer 30 forms a plurality of zones and each zone comprises at least one seam 32 (slit).And this polymer material layer 30 can be a rubber-like sticky material (paste), for example silicon rubber (silicone rubber), silicones (siliconeresin), elasticity PU, porous PU, acrylic rubber (acrylic rubber) or small pieces cutting glue etc.In addition, polymer material layer 30 can be a kind of two-stage thermosetting cement material or a kind of photoinduction layer (photosensitive film).Particularly when polymer material layer 30 be a kind of two-stage during the thermosetting cement material, it is formed on after the substrate 20, can optionally carry out a prebake conditions program; For example: baking is 5～10 minutes under 80 ℃～100 ℃ environment; So that the two-stage thermosetting cement material of liquid state is transformed into and a kind ofly has thick adhesion coating and be bonded together with substrate 20.
Then; Use fetching device (not being shown among the figure) with the back side up and the small pieces 410 that dispose a plurality of registration marks 402 pick up and be pasted to each zone on the polymer material layer 30 on the substrate 20 one by one; Wherein small pieces 410 are to be connected with polymer material layer 30 on the substrate 20 with active face, and make a plurality of weld pads 412 on the active face aim at and be exposed among at least one seam 32 in each zone.To stress at this; This seam 32 be can according to the weld pad on the active face of the small pieces that will encapsulate configuration and decide, for example, the weld pad 412 on the active face of small pieces 410 is disposed at the centre of small pieces 410 and becomes a row; Certainly; Also there is centre to form two row's weld pad persons, for example: dynamic memory body (DRAM), the i.e. sketch map of present embodiment at small pieces 410.
Then, a kind of two-stage thermosetting cement material 70 is formed on another substrate 60; Likewise, this substrate 60 also can be glass, quartz, pottery, circuit board or sheet metal (metal foil) etc., and present embodiment does not limit.Then, also can optionally carry out a prebake conditions program; For example: baking is 5～10 minutes under 80 ℃～100 ℃ environment; So that the two-stage thermosetting cement material 70 of liquid state is transformed into and a kind ofly has thick adhesion coating and be bonded together with substrate 60.Be stressed that at this thickness of this two-stage thermosetting cement material 70 needs the thickness greater than each chip 410, for example: 3～20mil.Then, substrate that is bonded together 60 and two-stage thermosetting cement material 70 are turned, be about to two-stage thermosetting cement material 70 towards the back side that is fixed in each small pieces 410 on the substrate 20, as shown in Figure 3.
Then, again with the substrate that is bonded together 60 and two-stage thermosetting cement material 70 to pressing down so that two-stage thermosetting cement material 70 can coat each small pieces 410, as shown in Figure 4.Follow, carry out a baking program, for example: baking is 20～60 minutes under 120 ℃～250 ℃ environment, so that two-stage thermosetting cement material 70 can be cured, to form a packaging body 70A.Follow again, can select earlier substrate 60 to be broken away from packaging body 70A,, then, can optionally use cutter (not being shown among the figure), on the surface of packaging body 70A, form many Cutting Roads 414 to expose the surface of packaging body 70A; Wherein, the degree of depth of each Cutting Road 414 be 0.5 Mill (mil) to 1 Mill, the width of Cutting Road 414 then is 5 microns to 25 microns.In a preferred embodiment, this Cutting Road 414 can be mutual vertical interlaced, and the reference line when can be used as actual cutting small pieces.Then, substrate 20 is separated with polymer material layer 30.Clearly; This packaging body 70A coats each small pieces 410; And the active face of each small pieces 410 is all covered by polymer material layer 30, and wherein a plurality of weld pads 412 on the active face of each small pieces 410 can expose to the open air out via the seam on the polymer material layer 30 32, and are as shown in Figure 5.Because packaging body 70A has many Cutting Roads 414 in its surface; Therefore; After polymer material layer 30 was peeled off with packaging body 70A, the stress on the packaging body 70A can be offset by these Cutting Road 414 formed zones, so can solve the problem of packaging body warpage effectively.
As shown in Figure 5; The weld pad 412 that exposes to the open air does not out contact with polymer material layer 30; So as long as after removing through suitable cleaning weld pad 412 surfaces or with weld pad 412 lip-deep oxide layers, just can be directly on the weld pad that exposes to the open air out 412 use processing procedure (the Redistribution Layer that reroutes; RDL) form the metal wire sections 90 of a plurality of fan-outs (fan out), each weld pad 412 on an end of this metal wire sections 90 and small pieces 410 active faces electrically connects, and the other end then extends to small pieces 410 edges; Then,, as shown in Figure 6 with manufacture of semiconductor in forming a protective layer 80 on the metal wire sections 90 and on the other end of each metal wire sections 90, forming a plurality of openings 82 (opening).At last; On each opening 82, form a plurality of electric connection elements 420 again, so that as the small pieces 410 external contacts that electrically connect, wherein; This electrically connects element 420 can be metal coupling (metal bump) or tin ball (solder ball), as shown in Figure 7.Then, can carry out last cutting to packaging body 70A, to form many small pieces of accomplishing encapsulation procedure, as shown in Figure 8.Clearly, 5 faces of in the present embodiment each small pieces 410 are all coated by two-stage thermosetting cement material 70 formed packaging body 70A, and the active face that small pieces 410 are only arranged is for being had the polymer material layer 30 of a seam 32 to cover by at least one.Simultaneously,, make metal wire sections 90 and electric connection element 420 all can accurately be connected, the reliability of the small pieces 410 of accomplishing encapsulation is improved with weld pad 412 also by the configuration of registration mark 402.
Yet, in a preferred embodiment, also can the polymer material layer on the substrate 20 30 be replaced with a kind of two-stage thermosetting cement material.After a plurality of chips 410 engage with two-stage thermosetting cement material 30 and coated by two-stage thermosetting cement material 70, when carrying out the baking program of two-stage thermosetting cement material 70, two-stage thermosetting cement material 70 is solidified.Therefore, can substrate 20 and substrate 60 be broken away from the two-stage thermosetting cement material that has solidified 30/70.Then, after the weld pad that will expose to the open air out 412 removes through suitable cleaning or with weld pad 412 lip-deep oxide layers, just can directly on the weld pad that exposes to the open air out 412, use processing procedure (the Redistribution Layer that reroutes; RDL) form the metal wire sections 90 of a plurality of fan-outs (fan out), an end of this metal wire sections 90 electrically connects with each weld pad 412 on small pieces 410 active faces, and the other end then extends to small pieces 410 edges; Then,, as shown in Figure 6 with manufacture of semiconductor in forming a protective layer 80 on the metal wire sections 90 and on the other end of each metal wire sections 90, forming a plurality of openings 82 (opening).At last; On each opening 82, form a plurality of electric connection elements 420 again, so that as the small pieces 410 external contacts that electrically connect, wherein; This electrically connects element 420 can be metal coupling (metal bump) or tin ball (solder ball), as shown in Figure 7.Then, can carry out last cutting, to form many small pieces of accomplishing encapsulation procedure to packaging body.
In addition, in the above-described embodiments, when substrate 60 is not removed; After packaging body 70A is cut into the small pieces 410 of many completion encapsulation; All leave substrate 60 on the back side of the small pieces 410 of its each completion encapsulation, it can be used as the fin of the small pieces 410 of accomplishing encapsulation, and is as shown in Figure 8.Certainly, in aforesaid encapsulation process, can be chosen in after substrate 20 disengagings yet, can further substrate 60 also be broken away from, at this moment, the back side of small pieces 410 does not just have substrate 60.Yet, after substrate 60 breaks away from, can optionally use cutter (not being shown among the figure), on the back side of packaging body 70A, form many Cutting Roads 414; Wherein, the degree of depth of each Cutting Road 414 be 0.5 Mill (mil) to 1 Mill, the width of Cutting Road 414 then is 5 microns to 25 microns.In a preferred embodiment, this Cutting Road 414 can be mutual vertical interlaced, and the reference line when can be used as actual cutting small pieces.Because packaging body 70A has many Cutting Roads 414 on the back side with respect to the active face of small pieces 410; Therefore; After substrate 60 was peeled off with packaging body 70A, the stress on the packaging body 70A can be offset by these Cutting Road 414 formed zones, so can solve the problem of packaging body warpage effectively.
According to the aforementioned content that discloses, the present invention further discloses a kind of structure of modular many dice packages.At first, please refer to Fig. 9, being expression forms the sketch map of an encapsulation module with a plurality of identical small pieces, in the present embodiment, is to explain with the formed illuminating module of four LEDs luminous elements; In addition, a plurality of identical small pieces also can be DRAM.
As shown in Figure 9, small pieces 320 are to be light-emitting diode (LED), and the P electrode 322 of each light-emitting diode 320 electrically connects with the P electrode 322 of adjacent light-emitting diode 320; And the N electrode 321 of light-emitting diode 320 is to electrically connect with the N electrode of adjacent light-emitting diode 320 321, and the N electrode 321 of each light-emitting diode 320 and P electrode 322 be by metal wire sections 90 respectively with electrically connect element 330 and electrically connect.Likewise, the present invention does not limit the quantity of light-emitting diode 320 or the mode of its electric connection yet, for example: with a plurality of light-emitting diodes (LED) be concatenated into a column light source or and be unified into a shape light source; Simultaneously; The present invention does not limit the glow color of light-emitting diode 320 yet, promptly light-emitting diode 320 can be red light-emitting diode or green light LED or blue light-emitting diode or other colors light-emitting diode (for example: white light) or the combination of aforementioned light-emitting diode etc.In addition, when small pieces are DRAM,, therefore can come suitable wiring (layout), each DRAM is done suitable electric connection by the metal wire sections of patterning because the weld pad on each DRAM is all identical; For example: the DRAM small pieces of 4 256M mode with serial or parallel connection is packaged together, forms a memory module that memory capacity is 1G.Because the electric connection of reaching between small pieces with the metal wire sections that forms patterning is not a characteristic of the present invention, thus no longer further detail, to avoid that the present invention is caused unnecessary restriction.
In addition, the present invention also discloses the sketch map that a kind of small pieces with a plurality of different sizes or difference in functionality form an encapsulation module, and is shown in figure 10, and it is to show that the small pieces envelope of difference in functionality or different sizes accomplishes the top view of encapsulation.Clearly, these small pieces modules are the system in package (System-In-Package that are made up of a plurality of small pieces; SIP); In the present embodiment, these small pieces comprise micro treatmenting device 305 (microprocessor means), storage arrangement 310 (memory means) or storage control device 315 (memory controller means) at least; Wherein have a plurality of weld pads on the active face of each small pieces; And on the weld pad of each small pieces, form patterning metal line sections, electrically connect adjacent small pieces and form electric connection with the electric connection element with the series connection or wiring (layout) mode of parallel connection.
Because it is similar to form the process of modular encapsulation process and aforesaid Fig. 3 to Fig. 6, so general introduction as follows.
At first, on substrate 20, dispose a polymer material layer 30, this polymer material layer 30 forms a plurality of zones and each zone comprises at least one seam 32 (slit).And this polymer material layer 30 can be a rubber-like sticky material (paste), for example silicon rubber (silicone rubber), silicones (siliconeresin), elasticity PU, porous PU, acrylic rubber (acrylic rubber) or small pieces cutting glue etc.In addition, polymer material layer 30 can be a kind of two-stage thermosetting cement material or a kind of photoinduction layer (photosensitive flim).Particularly when polymer material layer 30 be a kind of two-stage during the thermosetting cement material, it is formed on after the substrate 20, can optionally carry out a prebake conditions program; For example: baking is 5～10 minutes under 80 ℃～100 ℃ environment; So that the two-stage thermosetting cement material of liquid state is transformed into and a kind ofly has thick adhesion coating and be bonded together with substrate 20.
Then, use fetching device (not being shown among the figure) with the back side up and the small pieces that dispose a plurality of registration marks 402 (comprise 305; 310; 315; 320) pick up and be pasted to each zone on the polymer material layer 30 on the substrate 20 one by one, wherein small pieces (comprise 305; 310; 315; 320) be to be connected with polymer material layer 30 on the substrate 20, and make a plurality of weld pads 412 on the active face aim at and be exposed among at least one seam 32 in each zone with active face.To stress at this, this seam 32 be can according to the weld pad on the active face of the small pieces that will encapsulate configuration and decide, for example, small pieces (comprise 305; 310; 315; 320) weld pad 412 on the active face is disposed at small pieces and (comprises 305; 310; 315; 320) centre and become a row, the i.e. sketch map of present embodiment; Certainly, also have at small pieces and (comprise 305; 310; 315; 320) centre forms two row's weld pads, for example: dynamic memory (DRAM).
Then, a kind of two-stage thermosetting cement material 70 is formed on another substrate 60; Likewise, this substrate 60 also can be glass, quartz, pottery, circuit board or sheet metal (metal foil) etc., and present embodiment does not limit.Then, also can optionally carry out a prebake conditions program; For example: baking is 5～10 minutes under 80 ℃～100 ℃ environment; So that the two-stage thermosetting cement material 70 of liquid state is transformed into and a kind ofly has thick adhesion coating and be bonded together with substrate 60.Be stressed that at this thickness of this two-stage thermosetting cement material 70 needs (to comprise 305 greater than each chip; 310; 315; 320) thickness, for example: 3～20mil.Then, substrate that is bonded together 60 and two-stage thermosetting cement material 70 are turned, be about to two-stage thermosetting cement material 70 and (comprise 305 towards each small pieces that is fixed on the substrate 20; 310; 315; 320) the back side, as shown in Figure 3.
Then, again with the substrate that is bonded together 60 and two-stage thermosetting cement material 70 to pressing down, so that two-stage thermosetting cement material 70 can (comprise 305 with each small pieces; 310; 315; 320) coat, as shown in Figure 4.Follow, carry out a baking program, for example: baking is 20～60 minutes under 120 ℃～250 ℃ environment, so that two-stage thermosetting cement material 70 can be cured, to form a packaging body 70A.Follow again, can select earlier substrate 60 to be broken away from packaging body 70A,, then, can optionally use cutter (not being shown among the figure), on the surface of packaging body 70A, form many Cutting Roads 414 to expose the surface of packaging body 70A; Wherein, the degree of depth of each Cutting Road 414 be 0.5 Mill (mil) to 1 Mill, the width of Cutting Road 414 then is 5 microns to 25 microns.In a preferred embodiment, this Cutting Road 414 can be mutual vertical interlaced, and the reference line when can be used as actual cutting small pieces.Then, substrate 20 is separated with polymer material layer 30.Clearly; This packaging body 70A coats each small pieces 410; And the active face of each small pieces 410 is all covered by polymer material layer 30, and wherein a plurality of weld pads 412 on the active face of each small pieces 410 can expose to the open air out via the seam on the polymer material layer 30 32, and are as shown in Figure 5.Because packaging body 70A has many Cutting Roads 414 in its surface; Therefore; After polymer material layer 30 was peeled off with packaging body 70A, the stress on the packaging body 70A can be offset by these Cutting Road 414 formed zones, so can solve the problem of packaging body warpage effectively.
As shown in Figure 5; The weld pad 412 that exposes to the open air does not out contact with polymer material layer 30; So as long as after removing through suitable cleaning weld pad 412 surfaces or with weld pad 412 lip-deep oxide layers, just can be directly on the weld pad that exposes to the open air out 412 use processing procedure (the Redistribution Layer that reroutes; RDL) form the metal wire sections 90 of a plurality of fan-outs (fan out), an end and the small pieces of this metal wire sections 90 (comprise 305; 310; 315; 320) each weld pad 412 on the active face electrically connects, and the other end then (comprises 305 to small pieces; 310; 315; 320) edge extends; Then,, shown in figure 11 with manufacture of semiconductor in forming a protective layer 80 on the metal wire sections 90 and on the other end of each metal wire sections 90, forming a plurality of openings 82 (opening).At last; On each opening 82, form a plurality of electric connection elements 420 again, so that as the small pieces 410 external contacts that electrically connect, wherein; This electrically connects element 420 can be metal coupling (metal bump) or tin ball (solder ball), shown in figure 12.Then, can carry out last cutting, to form many packaging bodies 1000 of accomplishing encapsulation procedure, shown in Figure 13 A and Figure 13 B to packaging body 70A.This packaging body can be small pieces of encapsulation, and it also can be packaged into by the formed modular packaging body of a plurality of small pieces.When packaging body was a modular packaging body, a plurality of small pieces in the modular packaging body can be measure-alike small pieces, for example: light-emitting diode (LED) or dynamic memory (DRAM).Certainly; A plurality of small pieces in the modular packaging body also can be made up of a plurality of sizes small pieces inequality; For example, the small pieces of a plurality of sizes inequality can be the light-emitting diodes of micro treatmenting device, storage arrangement, storage control device or different colours etc.Clearly, each small pieces in each packaging body 1000 of present embodiment (comprise 305; 310; 315; 320) 5 faces are all coated by two-stage thermosetting cement material 70 formed packaging body 70A, only have small pieces (to comprise 305; 310; 315; 320) active face is for being had the polymer material layer 30 of a seam 32 to cover by at least one.Simultaneously,, make metal wire sections 90 and electric connection element 420 all can accurately be connected, the reliability of the module 1000 of accomplishing encapsulation is improved with weld pad 412 also by the configuration of registration mark 402.
In another preferred embodiment of the present invention, a fin 60 can on the back side of packaging body, be formed, shown in Figure 13 A; The mode of its formation can be chosen in the aforementioned processing procedure, substrate 60 is not removed earlier, because this substrate 60 can be a metallic plate, so can be as fin.In addition, also can select earlier by the thinning processing procedure, make that the back side of the small pieces that packed body coats exposes to the open air out after, on the back side of the small pieces that exposed to the open air, paste a fin again, shown in Figure 13 B.
Then, please refer to Figure 14, it is the generalized section of another specific embodiment of the present invention.Shown in figure 14, when the active face and the polymer material layer 30 of a plurality of small pieces 410 (for example: the photoinduction layer) engage after, and a plurality of weld pad 412 is via the seam on the photoinduction layer 30 32 after exposing to the open air out; Then, coating polymer material layer 700 on substrate 20 and part small pieces 110, and use a die device 500 that polymer material layer 700 is flattened.After polymer material layer 700 is flattened by die device 500 and formed the surface of a planarization, and make polymer material layer 700 be filled between the small pieces 410 and coat each small pieces 410, shown in figure 14.The material of this polymer material layer 700 can be silica gel, epoxy resin, acrylic acid (acrylic) or benzocyclobutene materials such as (BCB).Then, can be optionally the polymer material layer 700 of planarization be carried out a baking program, so that polymer material layer 700 solidifies.Follow again, carry out demoulding program, with die device 500 with solidify after polymer material layer 700 separate, with the surface of the polymer material layer 700 that exposes planarization, shown in figure 15.Then; Directly substrate 20 and photosensitive material layer 30 are peeled off; And photosensitive material layer 30 is stayed on the active face of small pieces 410, clearly, this polymer material layer 700 coats five faces of each small pieces 410; The active face of each small pieces 410 is then covered by photosensitive material layer 30, only has a plurality of weld pads 412 on the active face to expose to the open air out via the seam on the photosensitive material layer 30 32.Then, after the weld pad that will expose to the open air out 412 removes through suitable cleaning or with weld pad 412 lip-deep oxide layers, just can directly on the weld pad that exposes to the open air out 412, re-use the processing procedure that reroutes (Redistribution Layer; RDL) metal wire sections 90 of a plurality of fan-outs of formation (fan out) on a plurality of weld pads 412 of small pieces 410; Then, with manufacture of semiconductor in forming a protective layer 80 on the metal wire sections 90 and on the other end of each metal wire sections 90, forming a plurality of openings 82 (opening); This electrically connects element 420 at last, on each opening 82, form a plurality of electric connection elements 420 again, so that as the small pieces 410 external contacts that electrically connect, wherein, can be metal coupling (metal bump) or tin ball (solder ball).
Then, polymer material layer 700 is carried out last cutting, to form many packaging bodies of accomplishing encapsulation procedure.This packaging body can be small pieces of encapsulation, and it also can be packaged into by many formed modular packaging bodies of small pieces.When packaging body was a modular packaging body, many small pieces in the modular packaging body can be measure-alike small pieces, for example: light-emitting diode (LED) or dynamic memory (DRAM).Certainly; Many small pieces in the modular packaging body also can be made up of many size small pieces inequality; For example, the small pieces of many sizes inequality can be the light-emitting diodes of micro treatmenting device, storage arrangement, storage control device or different colours etc.Clearly, 5 faces of in the present embodiment each small pieces 410 are all coated by polymer material layer 700, only have the active face of small pieces 410 to be covered by photosensitive material layer 30.Simultaneously,, make metal wire sections 90 and electric connection element 420 all can accurately be connected, the reliability of the small pieces 410 of accomplishing encapsulation is improved with weld pad 412 also by the configuration of registration mark 402.
Please refer to Figure 16 and Figure 17, it is the generalized section of a specific embodiment more of the present invention.Shown in figure 16, at first, on substrate 20, dispose a polymer material layer 30, this polymer material layer 30 forms a plurality of zones and each zone comprises an opening 310 (opening).And this polymer material layer 30 can be a rubber-like sticky material (paste), for example silicon rubber (silicone rubber), silicones (silicone resin), elasticity PU, porous PU, acrylic rubber (acrylic rubber) or small pieces cutting glue etc.In addition, polymer material layer 30 can be a kind of two-stage thermosetting cement material or a kind of photosensitive material layer (photo sensitive flim).Particularly when polymer material layer 30 be a kind of two-stage during the thermosetting cement material, it is formed on after the substrate 20, can optionally carry out a prebake conditions program; For example: baking is 5～10 minutes under 80 ℃～100 ℃ environment; So that the two-stage thermosetting cement material of liquid state is transformed into and a kind ofly has thick adhesion coating and be bonded together with substrate 20.
Then; Use fetching device (not being shown among the figure) with the back side up and the small pieces 410 that dispose a plurality of registration marks 402 pick up and be pasted to each zone on the polymer material layer 30 on the substrate 20 one by one; Wherein small pieces 410 are to be connected with polymer material layer 30 on the substrate 20 with active face; And make a plurality of weld pads 412 alignings on the active face and be exposed to the opening 310 in each zone, shown in figure 17.To stress at this; This opening 310 be can according to the weld pad on the active face of the small pieces that will encapsulate configuration and decide; For example, the weld pad on the active face of small pieces is disposed at the centre of small pieces and becomes a row, certainly; Also there is centre to form two row's weld pad persons, for example: dynamic memory (DRAM) at small pieces.
Then, a kind of two-stage thermosetting cement material 70 is formed on another substrate 60; Likewise, this substrate 60 also can be glass, quartz, pottery, circuit board or sheet metal (metal foil) etc., and present embodiment does not limit.Then, also can optionally carry out-the prebake conditions program; For example: baking is 5～10 minutes under 80 ℃～100 ℃ environment; So that the two-stage thermosetting cement material 70 of liquid state is transformed into and a kind ofly has thick adhesion coating and be bonded together with substrate 60.Be stressed that at this thickness of this two-stage thermosetting cement material 70 needs the thickness greater than each chip 410, for example: 3～20mil.Then, substrate that is bonded together 60 and two-stage thermosetting cement material 70 are turned, be about to two-stage thermosetting cement material 70 towards the back side that is fixed in each small pieces 410 on the substrate 20.
Then, again with the substrate that is bonded together 60 and two-stage thermosetting cement material 70 to pressing down, so that two-stage thermosetting cement material 70 can coat each small pieces 410.Follow, carry out a baking program, for example: 120 ℃～250 ℃ environment are baking 20～60 down, so that two-stage thermosetting cement material 70 can be cured, to form a packaging body 70A.Follow again, substrate 20 is separated with polymer material layer 30.Clearly; This packaging body 70A coats each small pieces 410; And the active face of each small pieces 410 is all covered by polymer material layer 30, and wherein a plurality of weld pads 412 on the active face of each small pieces 410 can expose to the open air out via the opening on the polymer material layer 30 310.Because; The weld pad 412 that exposes to the open air does not out contact with polymer material layer 30; So as long as after removing through suitable cleaning weld pad 412 surfaces or with weld pad 412 lip-deep oxide layers; Just can on polymer material layer 30 and opening 310, form a protective layer (not being shown among the figure) earlier earlier, with manufacture of semiconductor the weld pad in the opening 310 412 exposed to the open air out then; Then, can use the processing procedure that reroutes (Redistribution Layer; RDL), on a plurality of weld pads 412, form the metal wire sections 90 of a plurality of fan-outs (fan out); Then,, shown in figure 18 with manufacture of semiconductor in forming another protective layer 80 on the metal wire sections 90 and on the other end of each metal wire sections 90, forming a plurality of openings 82 (opening).At last; On each opening 82, form a plurality of electric connection elements 420 again, so that as the small pieces 410 external contacts that electrically connect, wherein; This electrically connects element 420 can be metal coupling (metal bump) or tin ball (solder ball), shown in figure 19.Then, can carry out last cutting to packaging body, to form many small pieces of accomplishing encapsulation procedure, shown in figure 19.Clearly, 5 faces of in the present embodiment each small pieces 410 are all coated by two-stage thermosetting cement material 70 formed packaging body 70A, and the active face that small pieces 410 are only arranged is for being had the polymer material layer 30 of opening 310 to cover by one.Simultaneously,, make metal wire sections 90 and electric connection element 420 all can accurately be connected, the reliability of the small pieces 410 of accomplishing encapsulation is improved with weld pad 412 also by the configuration of registration mark 402.
In addition, in the present embodiment, the macromolecular material that coats each small pieces 410 also can be silica gel, epoxy resin, acrylic acid (acrylic) or benzocyclobutene materials such as (BCB), and its encapsulation process is with aforementioned identical, so repeat no more.
Likewise, the small pieces that above-mentioned process also is suitable for a plurality of identical (or inequality) form an encapsulation module, and like Fig. 9 or shown in Figure 10, because other processes are all identical, so repeat no more, its module of accomplishing after the encapsulation is shown in figure 21.Certainly, present embodiment also can form a fin 60 on the back side of packaging body, because it is all identical with previous described embodiment to form the process of fin, so repeat no more.
Though the present invention discloses as above with preferred embodiment; Right its is not that any those skilled in the art are not breaking away from the spirit and scope of the present invention in order to qualification the present invention; When can doing a little modification and perfect, so protection scope of the present invention is when being as the criterion with what claims defined.
Claims (7)
1. method for packing that small pieces reconfigure is characterized in that comprising:
One first substrate is provided, has a upper surface and a lower surface, configuration one polymer material layer on its upper surface, and this polymer material layer forms a plurality of zones and each this zone comprises at least one seam;
A plurality of small pieces are provided, and each those small pieces has an active face and a back side, and on this active face, disposes a plurality of weld pads;
Pick and place those small pieces, with on the zone covering crystal type and be seated in this polymer material layer, and these a plurality of weld pads are stitched in alignment with this this active face of each these small pieces;
One second substrate is provided, configuration one two-stage thermosetting cement material on it;
Form a packaging body, it engages this second substrate and this two-stage thermosetting cement material with the upper surface of this first substrate, so that should coat each these small pieces by two-stage thermosetting cement material;
Carry out a baking program, so that should two-stage thermosetting cement material be solidified to form the packaging body that solidifies;
Break away from this first substrate, be exposed in those seams with these a plurality of weld pads on the active face that exposes this polymer material layer and these a plurality of small pieces;
Form the metal wire sections of many fan-outs, an end of each this metal wire sections and those weld pads electrically connect;
Form a protective layer, with active face and each this metal wire sections that covers each these small pieces and the other end that exposes each this metal wire sections;
Form a plurality of electric connection elements, those other ends that electrically connect element and those metal wire sections are electrically connected; And
Cut this packaging body, to form a plurality of encapsulating structures independently separately.
2. method for packing as claimed in claim 1 is characterized in that, this encapsulating structure is encapsulation one small pieces.
3. method for packing as claimed in claim 1 is characterized in that, this encapsulating structure is a plurality of small pieces of encapsulation.
4. method for packing that small pieces reconfigure is characterized in that comprising:
One first substrate is provided, has a upper surface and a lower surface, configuration one polymer material layer on its this upper surface, and this polymer material layer forms a plurality of zones and each this zone comprises an opening;
A plurality of small pieces are provided, and each these small pieces has an active face and a back side, and on this active face, disposes a plurality of weld pads;
Pick and place those small pieces, be with this active face of each these small pieces with on the zone covering crystal type and be seated in this polymer material layer, and make these a plurality of weld pads in alignment with this opening;
One second substrate is provided, has a upper surface and a lower surface, configuration one two-stage thermosetting cement material on this upper surface;
Carry out a splice program, this second substrate, this two-stage thermosetting cement material are engaged with the upper surface of this first substrate, so that should coat each these small pieces by two-stage thermosetting cement material;
Carry out a baking program, so that should two-stage thermosetting cement material be solidified to form the packaging body that solidifies;
Break away from this first substrate, be exposed in this opening with those weld pads on this active face that exposes this polymer material layer and those small pieces;
Form one first protective layer, cover this polymer material layer and this opening and expose those weld pads to the open air;
Form the metal wire sections of many fan-outs, an end of each this metal wire sections and those weld pads electrically connect;
Form one second protective layer, with active face and each this metal wire sections that covers each these small pieces and the other end that exposes each this metal wire sections;
Form a plurality of electric connection elements, those other ends that electrically connect element and those metal wire sections are electrically connected; And
Cut this packaging body, to form a plurality of encapsulating structures independently separately.
5. method for packing as claimed in claim 4 is characterized in that, this encapsulating structure is encapsulation one small pieces.
6. method for packing as claimed in claim 4 is characterized in that, this encapsulating structure is a plurality of small pieces of encapsulation.
7. the method for packing that small pieces reconfigure is characterized in that, comprising:
One substrate is provided, has a upper surface and a lower surface, configuration one polymer material layer on its this upper surface, and this polymer material layer forms a plurality of zones and each this zone comprises at least one seam;
A plurality of small pieces are provided, and each those small pieces has an active face and a back side, and on this active face, disposes a plurality of weld pads;
Pick and place those small pieces, this active face of each these small pieces is seated on this polymer material layer to cover crystal type, and those weld pads are stitched in alignment with this;
Form a polymer material layer, in order to coat each these small pieces and to be filled between each these small pieces;
Break away from this substrate, be exposed in those seams with those weld pads on this active face that exposes this polymer material layer and those small pieces;
Form the metal wire sections of many fan-outs, an end of each this metal wire sections and those weld pads electrically connect;
Form a protective layer, with this active face and each this metal wire sections that covers each these small pieces and the other end that exposes each this metal wire sections;
Form a plurality of electric connection elements, those other ends that electrically connect element and those metal wire sections are electrically connected; And
Cut this packaging body, to form a plurality of encapsulating structures of independently accomplishing separately.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100016536A CN101477956B (en) | 2008-01-04 | 2008-01-04 | Encapsulation structure and method for tablet reconfiguration |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100016536A CN101477956B (en) | 2008-01-04 | 2008-01-04 | Encapsulation structure and method for tablet reconfiguration |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101477956A CN101477956A (en) | 2009-07-08 |
| CN101477956B true CN101477956B (en) | 2012-05-16 |
Family
ID=40838634
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008100016536A Active CN101477956B (en) | 2008-01-04 | 2008-01-04 | Encapsulation structure and method for tablet reconfiguration |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101477956B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101718011B1 (en) * | 2010-11-01 | 2017-03-21 | 삼성전자주식회사 | Semiconductor packages and methods for the same |
| CN102110666B (en) * | 2010-11-23 | 2012-12-12 | 威盛电子股份有限公司 | Integrated circuit chip package and physical layer interface arrangement |
| TWI599007B (en) * | 2014-09-03 | 2017-09-11 | 矽品精密工業股份有限公司 | Electronic monomer and method of fabricating the same |
| TWI552293B (en) * | 2014-09-26 | 2016-10-01 | 矽品精密工業股份有限公司 | Semiconductor package and method of manufacture |
| CN105206539A (en) * | 2015-09-01 | 2015-12-30 | 华进半导体封装先导技术研发中心有限公司 | Fan-out package preparation method |
| US10896827B2 (en) * | 2016-06-28 | 2021-01-19 | Zeon Corporation | Support for manufacturing semiconductor packages, use of support for manufacturing semiconductor packages, and method for manufacturing semiconductor packages |
| CN109755374A (en) * | 2019-03-20 | 2019-05-14 | 中芯长电半导体（江阴）有限公司 | The encapsulating structure and packaging method of wafer scale fan-out-type LED |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5989982A (en) * | 1997-10-08 | 1999-11-23 | Oki Electric Industry Co., Ltd. | Semiconductor device and method of manufacturing the same |
| CN1340855A (en) * | 2000-08-31 | 2002-03-20 | 琳得科株式会社 | Method for manufacturing semiconductor device |
| CN1405869A (en) * | 2001-09-18 | 2003-03-26 | 南茂科技股份有限公司 | Method for packaging substrate on wafer |
| US7196408B2 (en) * | 2003-12-03 | 2007-03-27 | Wen-Kun Yang | Fan out type wafer level package structure and method of the same |
-
2008
- 2008-01-04 CN CN2008100016536A patent/CN101477956B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5989982A (en) * | 1997-10-08 | 1999-11-23 | Oki Electric Industry Co., Ltd. | Semiconductor device and method of manufacturing the same |
| CN1340855A (en) * | 2000-08-31 | 2002-03-20 | 琳得科株式会社 | Method for manufacturing semiconductor device |
| CN1405869A (en) * | 2001-09-18 | 2003-03-26 | 南茂科技股份有限公司 | Method for packaging substrate on wafer |
| US7196408B2 (en) * | 2003-12-03 | 2007-03-27 | Wen-Kun Yang | Fan out type wafer level package structure and method of the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101477956A (en) | 2009-07-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101477955B (en) | Encapsulation structure and method for tablet reconfiguration | |
| TWI606563B (en) | Thin stacked chip package and the method for manufacturing the same | |
| US6897096B2 (en) | Method of packaging semiconductor dice employing at least one redistribution layer | |
| TWI567897B (en) | Thin fan-out stacked chip package and its manufacturing method | |
| US7927922B2 (en) | Dice rearrangement package structure using layout process to form a compliant configuration | |
| US7888172B2 (en) | Chip stacked structure and the forming method | |
| CN101477956B (en) | Encapsulation structure and method for tablet reconfiguration | |
| TWI387077B (en) | Chip rearrangement package structure and the method thereof | |
| CN101621041B (en) | Packaging structure with reconfiguration chip and method thereof | |
| JP2003078106A (en) | Chip-stacked package and its manufacturing method | |
| JP2002134660A (en) | Semiconductor device and its manufacturing method | |
| JPH02125633A (en) | Integrated circuit | |
| CN107958882A (en) | Encapsulating structure of chip and preparation method thereof | |
| TWI582867B (en) | Chip packaging process | |
| TWI777337B (en) | Semiconductor device and method for manufacturing the same | |
| CN101609822A (en) | Encapsulating structure that chip reconfigures and method thereof | |
| KR20220030005A (en) | Semiconductor package and method of manufacturing the semiconductor package | |
| CN101488462B (en) | Modulated multi-die package construction and method thereof | |
| CN100590823C (en) | Method for making registration mark used in packaging structure of crystal grain rearrangement | |
| CN116613267A (en) | Fan-out packaging structure of miniature LED light-emitting device and preparation method | |
| TWI358804B (en) | Multichip package structure and the forming method | |
| CN101452862B (en) | Encapsulation method with grains reconfigured | |
| TWI835452B (en) | Light emitting device and manufacturing method thereof | |
| CN101436552B (en) | Method for manufacturing package structure with reconfigured crystal particle by net-shaped structure | |
| KR100576886B1 (en) | Manufacturing method of semiconductor package |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |