CN101512667B - 具有在编程期间的耦合补偿的浮动栅极存储器 - Google Patents
具有在编程期间的耦合补偿的浮动栅极存储器 Download PDFInfo
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- CN101512667B CN101512667B CN2007800274512A CN200780027451A CN101512667B CN 101512667 B CN101512667 B CN 101512667B CN 2007800274512 A CN2007800274512 A CN 2007800274512A CN 200780027451 A CN200780027451 A CN 200780027451A CN 101512667 B CN101512667 B CN 101512667B
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- memory device
- volatile memory
- programming
- memory cell
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
- G11C7/1045—Read-write mode select circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
Abstract
Description
Claims (16)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/459,001 US7885119B2 (en) | 2006-07-20 | 2006-07-20 | Compensating for coupling during programming |
US11/459,001 | 2006-07-20 | ||
US11/459,002 | 2006-07-20 | ||
US11/459,002 US7400535B2 (en) | 2006-07-20 | 2006-07-20 | System that compensates for coupling during programming |
PCT/US2007/073739 WO2008011440A2 (en) | 2006-07-20 | 2007-07-18 | Floating gate memory with compensating for coupling during programming |
Publications (2)
Publication Number | Publication Date |
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CN101512667A CN101512667A (zh) | 2009-08-19 |
CN101512667B true CN101512667B (zh) | 2012-11-21 |
Family
ID=38971297
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007800274512A Active CN101512667B (zh) | 2006-07-20 | 2007-07-18 | 具有在编程期间的耦合补偿的浮动栅极存储器 |
Country Status (2)
Country | Link |
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US (3) | US7400535B2 (zh) |
CN (1) | CN101512667B (zh) |
Families Citing this family (19)
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---|---|---|---|---|
US7894269B2 (en) * | 2006-07-20 | 2011-02-22 | Sandisk Corporation | Nonvolatile memory and method for compensating during programming for perturbing charges of neighboring cells |
US7400535B2 (en) | 2006-07-20 | 2008-07-15 | Sandisk Corporation | System that compensates for coupling during programming |
US7885119B2 (en) | 2006-07-20 | 2011-02-08 | Sandisk Corporation | Compensating for coupling during programming |
US7443729B2 (en) * | 2006-07-20 | 2008-10-28 | Sandisk Corporation | System that compensates for coupling based on sensing a neighbor using coupling |
US7701770B2 (en) * | 2006-09-29 | 2010-04-20 | Hynix Semiconductor Inc. | Flash memory device and program method thereof |
US7660166B2 (en) * | 2007-01-31 | 2010-02-09 | Sandisk Il Ltd. | Method of improving programming precision in flash memory |
US7652929B2 (en) * | 2007-09-17 | 2010-01-26 | Sandisk Corporation | Non-volatile memory and method for biasing adjacent word line for verify during programming |
US7876611B2 (en) * | 2008-08-08 | 2011-01-25 | Sandisk Corporation | Compensating for coupling during read operations in non-volatile storage |
US8223551B2 (en) | 2009-02-19 | 2012-07-17 | Micron Technology, Inc. | Soft landing for desired program threshold voltage |
US8169830B2 (en) * | 2009-09-17 | 2012-05-01 | Micron Technology, Inc. | Sensing for all bit line architecture in a memory device |
US8107298B2 (en) * | 2010-01-29 | 2012-01-31 | Sandisk Technologies Inc. | Non-volatile memory with fast binary programming and reduced power consumption |
US8687431B2 (en) | 2011-07-06 | 2014-04-01 | Micron Technology, Inc. | Programming methods and memories |
US8537623B2 (en) | 2011-07-07 | 2013-09-17 | Micron Technology, Inc. | Devices and methods of programming memory cells |
US8681547B2 (en) | 2011-08-23 | 2014-03-25 | Micron Technology, Inc. | Memory cell coupling compensation |
US9001577B2 (en) * | 2012-06-01 | 2015-04-07 | Micron Technology, Inc. | Memory cell sensing |
US8988942B2 (en) | 2012-07-02 | 2015-03-24 | Sandisk Technologies Inc. | Methods for extending the effective voltage window of a memory cell |
US9142309B2 (en) * | 2013-02-19 | 2015-09-22 | Sk Hynix Memory Solutions Inc. | Generation of a composite read based on neighboring data |
WO2015004714A1 (ja) | 2013-07-08 | 2015-01-15 | 株式会社 東芝 | 半導体記憶装置 |
US9355739B2 (en) * | 2013-11-20 | 2016-05-31 | Globalfoundries Inc. | Bitline circuits for embedded charge trap multi-time-programmable-read-only-memory |
Citations (3)
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US6301161B1 (en) * | 2000-04-25 | 2001-10-09 | Winbond Electronics Corporation | Programming flash memory analog storage using coarse-and-fine sequence |
US6888758B1 (en) * | 2004-01-21 | 2005-05-03 | Sandisk Corporation | Programming non-volatile memory |
CN1658329A (zh) * | 2004-02-19 | 2005-08-24 | 恩益禧电子股份有限公司 | 非易失半导体存储设备以及在其中编程的方法 |
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IT1306963B1 (it) * | 1999-01-19 | 2001-10-11 | St Microelectronics Srl | Circuito a compensazione capacitativa per la regolazione dellatensione di lettura di riga in memorie non-volatili |
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US6327194B1 (en) * | 2000-04-25 | 2001-12-04 | Advanced Micro Devices, Inc. | Precise reference wordline loading compensation for a high density flash memory device |
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US7885119B2 (en) * | 2006-07-20 | 2011-02-08 | Sandisk Corporation | Compensating for coupling during programming |
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US7400535B2 (en) | 2006-07-20 | 2008-07-15 | Sandisk Corporation | System that compensates for coupling during programming |
US7443729B2 (en) | 2006-07-20 | 2008-10-28 | Sandisk Corporation | System that compensates for coupling based on sensing a neighbor using coupling |
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US7506113B2 (en) | 2006-07-20 | 2009-03-17 | Sandisk Corporation | Method for configuring compensation |
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2006
- 2006-07-20 US US11/459,002 patent/US7400535B2/en active Active
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2007
- 2007-07-18 CN CN2007800274512A patent/CN101512667B/zh active Active
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2008
- 2008-05-21 US US12/124,440 patent/US7630248B2/en active Active
- 2008-05-21 US US12/124,434 patent/US7480179B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6301161B1 (en) * | 2000-04-25 | 2001-10-09 | Winbond Electronics Corporation | Programming flash memory analog storage using coarse-and-fine sequence |
US6888758B1 (en) * | 2004-01-21 | 2005-05-03 | Sandisk Corporation | Programming non-volatile memory |
CN1658329A (zh) * | 2004-02-19 | 2005-08-24 | 恩益禧电子股份有限公司 | 非易失半导体存储设备以及在其中编程的方法 |
Also Published As
Publication number | Publication date |
---|---|
US20080019186A1 (en) | 2008-01-24 |
US20080219056A1 (en) | 2008-09-11 |
CN101512667A (zh) | 2009-08-19 |
US7480179B2 (en) | 2009-01-20 |
US7630248B2 (en) | 2009-12-08 |
US7400535B2 (en) | 2008-07-15 |
US20080219051A1 (en) | 2008-09-11 |
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