CN101567301B - Method for forming viscous grain by wafer separation - Google Patents
Method for forming viscous grain by wafer separation Download PDFInfo
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- CN101567301B CN101567301B CN200810093403XA CN200810093403A CN101567301B CN 101567301 B CN101567301 B CN 101567301B CN 200810093403X A CN200810093403X A CN 200810093403XA CN 200810093403 A CN200810093403 A CN 200810093403A CN 101567301 B CN101567301 B CN 101567301B
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Abstract
The invention discloses a method for forming viscous grains by wafer separation. The method comprises the following steps: forming cutting gaps among the grains of a wafer; transfer-printing a viscouslayer formed on an expansile film to the wafer; forming presplitting grooves which correspond to the cutting gaps, which do not pass through the viscous layer, on the viscous layer; stretching the ex pansile film for splitting the viscous layer along the lines of the presplitting grooves; and taking out the grains coated with the viscous layer by the expansile film. A cutting rough edge protrudingfrom a protrudent vicious grain face can not be formed at the edge of the vicious layer, therefore the known problem that the cutting rough edge causes the adhesion inclination and the clearances of the vicious grains is further solved, and the edge of the vicious layer is not prone to improper solidification when the vicious layer is separated at low temperatures.
Description
Technical field
The present invention is particularly to a kind of formation method of viscous grains by wafer separation relevant for a kind of manufacturing technology of semiconductor device.
Background technology
When wafer (wafer) has experienced tens of roads or even more semiconductor technology, after just can producing two or more integrated circuits that are arrayed or Micro Electro Mechanical System (MEMS) structure, promptly can utilize cutting technique that wafer is cut out two or more crystal grain (die), so that carry out follow-up semiconductor packaging process and packaging technology.Yet the surface of traditional crystal grain does not have viscosity, needs to spread in addition on substrate sticking brilliant material.The formation technology that needs a kind of viscous grain of development is to control sticking brilliant characteristic, consumption and to make follow-up semiconductor packages/packaging technology more efficient.
Please refer to shown in Figure 1ly, be the local element sectional view in the forming process of known viscous grains by wafer separation.Shown in the A figure among Fig. 1, the wafer 110 of desiring to carry out cutting technique is provided, this wafer 110 comprises the unsegregated crystal grain 111 of two or more one.In addition, this wafer 110 can have integrated circuit and form the surface 112 and the back side 113, and this wafer 110 also has two or more and is positioned at the weld pad 114 (as shown in Figure 2) that this integrated circuit forms surface 112.Then, shown in the B figure among Fig. 1, form surface 112 at this integrated circuit of this wafer 110 and attach brilliant back-grinding adhesive tape 120, cover whereby and protect the integrated circuit of this wafer 110 to form surface 112.Afterwards, shown in the C figure among Fig. 1, grind this back side 113 of this wafer 110, allow the thickness of this wafer 110 be reduced to preset thickness.Afterwards, shown in the D figure among Fig. 1, attach film carrier 140 with adhesion coating 130 at this back side 113 of this wafer 110.Afterwards, shown in the D figure among Fig. 1, make according to the direction of arrow and originally stick on this integrated circuit to form surface this crystalline substance back-grinding adhesive tape 120 of 112 separated to peel off the tool (not shown) again, form surface 112 (shown in the E figure among Fig. 1) and manifest this integrated circuit.Afterwards, shown in the F figure among Fig. 1, utilize dicing saws platform (not shown) to carry out the contraposition of this wafer 110, and utilize cutting tool (for example diamond scriber) according to pre-set Cutting Road (scribe line), this wafer 110 is cut into the crystal grain 111 of two or more separation, wear this adhesion coating 130 except cutting, also can this film carrier 140 of a little incision.At last, shown in the G figure among Fig. 1, carry out follow-up crystal grain with the vacuum slot (not shown) again and pick up technology.
Please refer to F figure among Fig. 1 and shown in Figure 2, in above-mentioned cutting step, when utilizing cutting tool 160 to cut this wafer 110 and this adhesion coating 130 from top to bottom to this film carrier 140, this adhesion coating 130 can produce reclinate burr 131 (as shown in Figure 2), and make these adhesion coating 130 formation irregular sticking brilliant surperficial, can cause follow-up this adhesion coating 130 to affix to another chip or substrate generation attaching inclination and the problem of gluing brilliant clearance.This adhesion coating 130 can't produce good bond area with the chip (or substrate) that is attached, and causes being easy to layering, so influence semiconductor packages/assembling quality.
Summary of the invention
In view of this, main purpose of the present invention is to provide a kind of formation method of viscous grains by wafer separation, avoids giving prominence to the cutting burr that glue crystal face in the generation of the edge of adhesion coating, and then solves the problem that known cutting burr cause sticking brilliant attaching inclination and clearance.
The object of the invention to solve the technical problems realizes by the following technical solutions.Formation method according to disclosed a kind of viscous grains by wafer separation mainly comprises following steps.At first, provide wafer, this wafer comprises the unsegregated crystal grain of two or more one.Then, form cutting gaps at these intergranules.Afterwards, the transfer printing adhesion coating is on this wafer, and wherein this adhesion coating is formed on the expansible film.Afterwards, form the presplitting guide groove in this adhesion coating, this presplitting guide groove is in alignment with this cutting gaps and do not run through this adhesion coating.Afterwards, this expansible film that stretches is so that this adhesion coating is divided along the lines of this presplitting guide groove.At last, take out these by this expansible film and be pasted with the crystal grain that divides adhesion coating.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
In the formation method of aforesaid viscous grains by wafer separation, this wafer can have integrated circuit and form the surface and the back side, and this wafer also has two or more and is positioned at the weld pad that this integrated circuit forms the surface.
In the formation method of aforesaid viscous grains by wafer separation, this integrated circuit that this adhesion coating can be needed on this wafer forms the surface.
In the formation method of aforesaid viscous grains by wafer separation, this adhesion coating can be needed on this back side of this wafer.
In the formation method of aforesaid viscous grains by wafer separation, the step that forms this cutting gaps at these intergranules comprises the step of wafer hemisect.
In the formation method that aforesaid stickiness grain by wafer separates, the cutting gaps that forms in this wafer hemisect step can have the depth of cut less than the thickness of this wafer, and comprises brilliant back-grinding step in addition, so that these die separation.
In the formation method of aforesaid viscous grains by wafer separation, before this crystalline substance back-grinding step, can attach brilliant back-grinding adhesive tape in this wafer and cover this cutting gaps.
In the formation method of aforesaid viscous grains by wafer separation, this crystalline substance back-grinding adhesive tape can be removed after the transfer step of this adhesion coating.
In the formation method of aforesaid viscous grains by wafer separation, this cutting gaps and this presplitting guide groove can be formed by the cutting tool in the same step.
In the formation method of aforesaid viscous grains by wafer separation, after this expansible film that stretches, the step that can comprise in addition is: lose or reduce the viscosity of this expansible film to this adhesion coating, so that take out these crystal grain.
In the formation method of aforesaid viscous grains by wafer separation, this forfeiture or the method that reduces the viscosity of this expansible film can comprise UV-irradiation.
In the formation method that aforesaid stickiness grain by wafer separates, this presplitting guide groove can have the U-shaped cross section.
In the formation method of aforesaid viscous grains by wafer separation, this presplitting guide groove can have the V-arrangement cross section.
As can be seen from the above technical solutions, the formation method of viscous grains by wafer separation of the present invention has the following advantages and effect:
One, when forming indivedual viscous grain, can when the edge of adhesion coating, not produce and give prominence to the cutting burr that glue crystal face, and then solve the problem that known cutting burr cause sticking brilliant attaching inclination and clearance by the wafer separate that attaches adhesion coating.
Two, can not damage the structure of expansible film, guaranteeing good tensile properties, and when low temperature or normal temperature separate adhesion coating, produce improper curing with the edge of avoiding adhesion coating.
Three, utilize wafer hemisect step and brilliant back-grinding step before transfer printing adhesion coating step, so that die separation, and then avoid when the formation of cutting gaps, causing the curing of adhesion coating.
Description of drawings
Fig. 1 is the local element sectional view in the forming process of known viscous grains by wafer separation;
Fig. 2 is known with the cross section part enlarged diagram of cutting tool cutting crystal wafer with adjacent crystal grain in the step of separating viscous grain;
Fig. 3 is the formation flow chart of a kind of viscous grains by wafer separation of first specific embodiment according to the present invention;
Fig. 4 is the local element sectional view in the process of a kind of viscous grains by wafer separation of first specific embodiment according to the present invention;
Fig. 5 is the local enlarged diagram in the cross section that forms presplitting guide groove adjacent crystal grain in the step of adhesion coating of first specific embodiment according to the present invention;
Fig. 6 is the local enlarged diagram in the cross section of adjacent crystal grain in the step of the expansible film of stretching of first specific embodiment according to the present invention;
Fig. 7 is the local element sectional view in the process of a kind of viscous grains by wafer separation of second specific embodiment according to the present invention;
Fig. 8 is the local enlarged diagram in the cross section that forms presplitting guide groove adjacent crystal grain in the step of adhesion coating of second specific embodiment according to the present invention;
Fig. 9 is the local enlarged diagram in the cross section of adjacent crystal grain in the step of the expansible film of stretching of second specific embodiment according to the present invention.
Description of reference numerals
D1 thickness D2 depth of cut
1 provides wafer
2 in intergranule formation cutting gaps
3 transfer printing adhesion coatings are in wafer
4 form the presplitting guide groove in adhesion coating
The expansible film of 5 stretchings
6 by expansible film taking-up crystal grain
110 wafers, 111 crystal grain
112 integrated circuits form surperficial 113 back sides
114 weld pads
120 brilliant back-grinding adhesive tapes
130 adhesion coatings, 131 burr
140 film carriers, 160 cutting tools
210 wafers, 211 crystal grain
212 integrated circuits form surperficial 213 back sides
214 weld pads, 215 cutting gaps
220 brilliant back-grinding adhesive tapes
230 adhesion coatings, 231 presplitting guide grooves, 232 slight cracks
240 expansible film 251 stationary fixtures 252 stretching platforms
260 cutting tools
310 wafers, 311 crystal grain
312 integrated circuits form surperficial 313 back sides
314 weld pads, 315 cutting gaps
330 adhesion coatings, 331 presplitting guide grooves, 332 slight cracks
340 film spreadings, 351 stationary fixtures, 352 stretching platforms
360 cutting tools
Embodiment
First specific embodiment
According to first specific embodiment of the present invention, specifically disclose a kind of formation method of viscous grains by wafer separation.Fig. 3 is a kind of formation flow chart of viscous grains by wafer separation, and Fig. 4 is the local element sectional view in the process of viscous grains by wafer separation.
As shown in Figure 3, method of the present invention comprises following steps: step 1 provides wafer; Step 2 forms cutting gaps at intergranule; Step 3, the transfer printing adhesion coating is on wafer; Step 4 forms the presplitting guide groove on adhesion coating; Step 5, expansible film stretches; And step 6, take out crystal grain by expansible film.
At first, the step 1 of Fig. 3 can be consulted shown in the A figure among Fig. 4, and the wafer 210 of desiring to carry out cutting technique is provided, and this wafer 210 includes the unsegregated crystal grain 211 of two or more one.In addition, this wafer 210 can have integrated circuit and form the surface 212 and the back side 213, and this wafer 210 also has two or more weld pads 214 (as shown in Figure 5), and it is positioned at this integrated circuit and forms surface 212.The Base Material of this wafer 210 is semi-conducting materials such as silicon, silicon germanide and GaAs normally.The material of these weld pads 214 is generally aluminium.
The step 2 of Fig. 3 is the step of wafer hemisect in the present embodiment.At first can consult shown in the B figure among Fig. 4, step 2 comprises according to pre-set Cutting Road (scribe line), forms cutting gaps 215 between these crystal grain 211.This cutting gaps 215 can have the depth of cut D2 less than the thickness D1 of this wafer 210, wears this wafer 210 not cut.This cutting gaps 215 forms down extension of surface 212 from this integrated circuit of this wafer 210.Specifically, this wafer hemisect step can use existing cutting tool to carry out, for example diamond scriber (diamond scriber) high speed grinding and cutting.In detail, though the thickness D1 of this wafer 210 does not have particular restriction, usually between 350 microns to 800 microns.Wherein this depth of cut D2 is through suitably adjusting to meet predetermined chip thickness, usually between 20 microns to 500 microns.In addition, the width of cutting the crystal grain blade that the width of this cutting gaps 215 equals to use is usually between 10 microns to 100 microns.
In the present embodiment, can comprise brilliant back-grinding step in addition after the step 2, after this cutting gaps 215 forms, carry out, so that these crystal grain 211 separate.Shown in the C figure among Fig. 4, carrying out before this crystalline substance back-grinding step, can attach brilliant back-grinding adhesive tape 220 and form surface 212 and cover this cutting gaps 215 in this integrated circuit of this wafer 210.Shown in the D figure among Fig. 4, can utilize brilliant back-grinding instrument (not shown) that this back side 213 of this wafer 210 is ground, so that the thickness of this wafer 210 reduces, wherein, this wafer 210 be reduced thickness deducts this depth of cut D2 greater than the thickness D1 of this wafer 210 difference, thereby make these crystal grain 211 be split into single chip, and between these crystal grain 211, be cutting gaps 215.Specifically; these crystalline substance back-grinding adhesive tape 220 shapes are roughly identical with this wafer 210 or be slightly larger than this wafer 210; can when grind, the support of this wafer 210 be provided and these crystal grain 211 are dropped, and can protect this integrated circuit of this wafer 210 to form surface 212 impulsive forces injury-free and that absorb when grinding and guarantee that this wafer 210 can not break.
Afterwards, the step 3 of carrying out can be consulted shown in the E figure among Fig. 4.Provide adhesion coating 230 to attach or be needed on this back side 213 of this wafer 210.This adhesion coating 230 can be double-sided sticky tape or B rank adhesive-layer.Wherein this adhesion coating 230 is formed on the expansible film 240.But this expansible film 240 has the characteristic that tension is stretched, and can be selected from the wherein a kind of of ultraviolet tape (UV tape), thermal separation gel band (thermal tape) or blue film (blue tape).
Preferably, the step (can referring to the figure of the D among Fig. 4) that the step 3 of this adhesion coating 230 of transfer printing (can referring to the E among Fig. 4 figure) may be implemented in above-mentioned wafer hemisect afterwards, to avoid in the forming process of this cutting gaps 215, causing the curing of this adhesion coating 230.
In addition, shown in the E figure among Fig. 4, this crystalline substance back-grinding adhesive tape 220 can be removed after the transfer step of this adhesion coating 230, can peel off the tool (not shown) and separate, so that covered these weld pads 214 expose (as the figure of the F among Fig. 4 and shown in Figure 5) originally according to this adhesion coating 230 that the direction of arrow makes this integrated circuit that sticks on this wafer 210 form surface 212.Wherein, make this crystalline substance back-grinding adhesive tape 220 lose viscosity and the method that tears off easily can be ultraviolet light (UV) irradiation.
Afterwards, the G that the step 4 of Fig. 3 can be consulted among Fig. 4 schemes with shown in Figure 5, aims at these cutting gaps 215 and forms presplitting guide grooves 231 at this adhesion coating 230 with cutting tool 260.Specifically, this presplitting guide groove 231 is in alignment with this cutting gaps 215 and do not run through this adhesion coating 230.Promptly the degree of depth of these cutting tool 260 these adhesion coatings 230 of cutting is not more than the thickness of whole adhesion coating 230.Specifically, as shown in Figure 5, this presplitting guide groove 231 can have the U-shaped cross section.
Afterwards, carry out the step 5 of Fig. 3.Shown in the H figure among Fig. 4, can utilize stationary fixture 251 and stretching platform 252 these expansible films 240 of stretching, make its generation horizontal expansion pulling force and this adhesion coating 230 is divided along the lines of this presplitting guide groove 231.Shown in the I figure among Fig. 4, after this expansible film 240 that stretches, this adhesion coating 230 is separated into and is attached at more than two or two of these crystal grain 211.Specifically, as shown in Figure 6, this adhesion coating 230 can form slight crack 232 after being divided along the lines of this presplitting guide groove 231, though this slight crack 232 may out-of-flatness, can not form down outstanding cutting burr.Therefore, can eliminate the cutting burr that protrude in sticking crystal face, and then solve and knownly once cut the attaching tilt problem that this adhesion coating 230 is formed the cutting burr and causes sticking crystalline substance with cutting tool to tear these adhesion coating 230 modes.In addition, can not damage the structure of this expansible film 240, guaranteeing good tensile properties, and can reach and avoid when low temperature or normal temperature divide this adhesion coating 230 that adhesion coating 230 produces the effect of improper curing at the edge after step 5.
In addition, after this expansible film 240 that stretches, the step that can comprise in addition is: lose or reduce the viscosity of 240 pairs of these adhesion coatings 230 of this expansible film, so that take out these crystal grain 211.Specifically, this forfeiture or the method that reduces the viscosity of this expansible film 240 can comprise UV-irradiation or heating process, and the viscosity of this expansible film 240 is reduced, and this expansible film 240 is divested and separate with this adhesion coating 230.
At last, carry out the step 6 of Fig. 3.Shown in the J figure among Fig. 4, take out these with the vacuum slot (not shown) by this expansible film 240 and be pasted with the crystal grain 211 that divides adhesion coating 230.These single crystal grain 211 can be fixed and be bonded to and specify the substrate (not shown) via this adhesion coating 230, to carry out semiconductor packages; Or fix and be bonded to and specify crystal grain 211, and form the multi-chip stacking encapsulation.
Second specific embodiment
Second specific embodiment of the present invention discloses the formation method of another kind of viscous grains by wafer separation.As shown in Figure 3, flow process of the present invention also comprises following steps: step 1 provides wafer; Step 2 forms cutting gaps at intergranule; Step 3, the transfer printing adhesion coating is in wafer; Step 4 forms the presplitting guide groove in adhesion coating; Step 5, expansible film stretches; And step 6, take out crystal grain by expansible film.Wherein, step 2 may be implemented in after the step 3, and carries out simultaneously with step 4.
At first, the step 1 of Fig. 3 can be consulted shown in the A figure among Fig. 7, and wafer 310 is provided, and this wafer 310 includes the unsegregated crystal grain 311 of two or more one.In addition, this wafer 310 can have integrated circuit and form the surface 312 and the back side 313, and this wafer 310 also has two or more and is positioned at the weld pad 314 (as shown in Figure 8) that this integrated circuit forms surface 312.
Then, carry out step 3.As the B among Fig. 7 figure and shown in Figure 8, provide adhesion coating 330, and this integrated circuit that attaches or be needed on this wafer 310 forms surface 312, wherein this adhesion coating 330 is formed on the expansible film 340.But this expansible film 340 has the characteristic that tension is stretched.And in the present embodiment, this adhesion coating 330 can manifest and be positioned at this integrated circuit and form surface these weld pads 314 of 312, to avoid this adhesion coating 330 to produce when the high temperature flowing and excessive glue pollution to these weld pads 314.
Shown in the C figure among Fig. 7, after step 3, can carry out brilliant back-grinding step, so that this wafer 310 reaches preset thickness.Specifically, these adhesion coating 330 shapes are roughly identical with this wafer 310 or be slightly larger than this wafer 310.In the present embodiment; this adhesion coating 330 is when being applied to grinding steps; can replace known brilliant back-grinding adhesive tape; good fixing of this wafer 310 can be provided and not peel off, and can protect this integrated circuit of this wafer 310 to form surface 312 impulsive forces injury-free and that absorb when grinding and guarantee that this wafer 310 can not break.
Afterwards, carry out the step 2 and step 4 of Fig. 3.The D that can consult among Fig. 7 schemes with shown in Figure 8, according to pre-set Cutting Road, utilize cutting tool 360 down to extend to cut and wear this wafer 310 and separate this wafer 310, make it be separated into two or more crystal grain 311 to form cutting gaps 315 from this back side 313.Simultaneously, this cutting tool 360 down cuts to this adhesion coating 330, does not wear this adhesion coating 330 but do not cut, and forms presplitting guide groove 331.Specifically, this cutting gaps 315 can utilize this cutting tool 360 to form at one time by same action with this presplitting guide groove 331.Can save and divide secondary to implement step of cutting in first specific embodiment of the present invention, and finish this wafer 310 of cutting and cut the step that this adhesion coating 330 forms this presplitting guide groove 331 with a cutting step.Preferably, more as shown in Figure 8, this cutting tool 360 has the V-arrangement knife edge, so that this presplitting guide groove 331 has the V-arrangement cross section, with convenient this adhesion coating 330 that tears off in step 5.
Afterwards, carry out the step 5 of Fig. 3.Shown in figure of the E among Fig. 7 and the 9th figure, can utilize stationary fixture 351 and stretching platform 352 these expansible films 340 of stretching, make its generation horizontal expansion pulling force and this adhesion coating 330 is divided along the lines of this presplitting guide groove 331, as the figure of the F among Fig. 7 and shown in Figure 9.In this specific embodiment, after this adhesion coating 330 is divided along the lines of this presplitting guide groove 331, can form slight crack 332, utilize this to tear action and can not make this adhesion coating 330 form down outstanding cutting burr, and then solve and knownly cut this adhesion coating 330 fully with cutting tool and is formed the cutting burr and cause sticking brilliant attaching to be tilted and the problem of gluing brilliant clearance.In addition, after this expansible film 340 that stretches, the step that can comprise in addition is: lose or reduce the viscosity of 340 pairs of these adhesion coatings 330 of this expansible film, so that take out these crystal grain 311.
At last, carry out the step 6 of Fig. 3.Shown in the G figure among Fig. 7, take out these with the vacuum slot (not shown) by this expansible film 340 and be pasted with the crystal grain 311 that divides adhesion coating 330.
Therefore, the formation method of viscous grains by wafer separation provided by the invention, when forming single viscous grain by the wafer separate that attaches adhesion coating, can when the edge of adhesion coating, not produce and give prominence to the cutting burr that glue crystal face, and then solve the problem that known cutting burr cause sticking brilliant attaching inclination and clearance.In addition, the present invention can not damage the structure of expansible film, guaranteeing good tensile properties, and produces improper curing with the edge of avoiding adhesion coating when low temperature or normal temperature separate adhesion coating.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction, and the technical solution of the present invention scope should be as the criterion with appended claims.Any those of ordinary skill in the art can utilize the technology contents of above-mentioned announcement to make a little change or be modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solution of the present invention,, all still belong in the scope of technical solution of the present invention any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (10)
1. the formation method of a viscous grains by wafer separation is characterized in that, mainly comprises following steps:
Wafer is provided, and this wafer comprises the unsegregated crystal grain of two or more one;
Form cutting gaps at described intergranule;
The transfer printing adhesion coating is in this wafer, and wherein this adhesion coating is formed on the expansible film;
Form the presplitting guide groove in this adhesion coating, this presplitting guide groove is in alignment with this cutting gaps and do not run through this adhesion coating;
This expansible film that stretches is so that this adhesion coating is divided along the lines of this presplitting guide groove; And
Be pasted with the described crystal grain that divides adhesion coating by this expansible film taking-up.
2. the formation method of viscous grains by wafer separation as claimed in claim 1 is characterized in that, described wafer has integrated circuit and forms the surface and the back side, and this wafer also has two or more and is positioned at the weld pad that this integrated circuit forms the surface.
3. the formation method of viscous grains by wafer separation as claimed in claim 2 is characterized in that, described adhesion coating is needed on the back side of this wafer.
4. the formation method of viscous grains by wafer separation as claimed in claim 1 is characterized in that, the described step that forms this cutting gaps at intergranule comprises the step of wafer hemisect.
5. the formation method of viscous grains by wafer separation as claimed in claim 4, it is characterized in that, the cutting gaps that forms in the described wafer hemisect step has the depth of cut less than the thickness of this wafer, and comprises brilliant back-grinding step in addition, so that described die separation.
6. the formation method of viscous grains by wafer separation as claimed in claim 5 is characterized in that, before described brilliant back-grinding step, attaches brilliant back-grinding adhesive tape in this wafer and cover this cutting gaps.
7. the formation method of viscous grains by wafer separation as claimed in claim 6 is characterized in that, described brilliant back-grinding adhesive tape is removed after the transfer step of this adhesion coating.
8. the formation method of viscous grains by wafer separation as claimed in claim 1 is characterized in that, after this expansible film that stretches, the step that other comprises is: lose or reduce the viscosity of this expansible film to this adhesion coating, take out described crystal grain.
9. the formation method of viscous grains by wafer separation as claimed in claim 8 is characterized in that, described forfeiture or the method that reduces the viscosity of this expansible film comprise UV-irradiation.
10. the formation method of viscous grains by wafer separation as claimed in claim 1 is characterized in that, described presplitting guide groove has the U-shaped cross section.
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| CN200810093403XA CN101567301B (en) | 2008-04-21 | 2008-04-21 | Method for forming viscous grain by wafer separation |
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| CN200810093403XA CN101567301B (en) | 2008-04-21 | 2008-04-21 | Method for forming viscous grain by wafer separation |
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| CN101567301B true CN101567301B (en) | 2010-09-29 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104108139A (en) * | 2013-04-18 | 2014-10-22 | 中芯国际集成电路制造(上海)有限公司 | Method for cutting MEMS (micro-electromechanical system) wafers |
| CN108987294A (en) * | 2018-06-21 | 2018-12-11 | 上海飞骧电子科技有限公司 | Solve the problems, such as the passive device GaAs brush coating method of encapsulation excessive glue |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5659033B2 (en) * | 2011-02-04 | 2015-01-28 | 株式会社東芝 | Manufacturing method of semiconductor device |
| CN109665486B (en) * | 2018-12-24 | 2020-08-28 | 中山大学 | Micro-cup and transfer printing preparation method and application thereof |
| CN111446159B (en) * | 2020-03-11 | 2023-02-03 | 绍兴同芯成集成电路有限公司 | Production method for cutting front surface and thinning back surface |
| CN111489966A (en) * | 2020-06-15 | 2020-08-04 | 紫光宏茂微电子(上海)有限公司 | Method for cutting wafer |
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| US6083811A (en) * | 1996-02-07 | 2000-07-04 | Northrop Grumman Corporation | Method for producing thin dice from fragile materials |
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| US6083811A (en) * | 1996-02-07 | 2000-07-04 | Northrop Grumman Corporation | Method for producing thin dice from fragile materials |
| US6703075B1 (en) * | 2002-12-24 | 2004-03-09 | Chipmos Technologies (Bermuda) Ltd. | Wafer treating method for making adhesive dies |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104108139A (en) * | 2013-04-18 | 2014-10-22 | 中芯国际集成电路制造(上海)有限公司 | Method for cutting MEMS (micro-electromechanical system) wafers |
| CN104108139B (en) * | 2013-04-18 | 2015-12-09 | 中芯国际集成电路制造(上海)有限公司 | A kind of cutting method of MEMS wafer |
| CN108987294A (en) * | 2018-06-21 | 2018-12-11 | 上海飞骧电子科技有限公司 | Solve the problems, such as the passive device GaAs brush coating method of encapsulation excessive glue |
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| CN101567301A (en) | 2009-10-28 |
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