CN101582375A - 具有均匀温度分布晶片支撑的电容耦合等离子体反应装置 - Google Patents
具有均匀温度分布晶片支撑的电容耦合等离子体反应装置 Download PDFInfo
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- CN101582375A CN101582375A CNA2008101789071A CN200810178907A CN101582375A CN 101582375 A CN101582375 A CN 101582375A CN A2008101789071 A CNA2008101789071 A CN A2008101789071A CN 200810178907 A CN200810178907 A CN 200810178907A CN 101582375 A CN101582375 A CN 101582375A
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- H—ELECTRICITY
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- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
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- H—ELECTRICITY
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- H01J37/32—Gas-filled discharge tubes
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- H—ELECTRICITY
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Abstract
Description
Claims (16)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US72931405P | 2005-10-20 | 2005-10-20 | |
US60/729,314 | 2005-10-20 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2006101400736A Division CN1956143A (zh) | 2005-10-20 | 2006-10-18 | 具有均匀温度分布晶片支撑的电容耦合等离子体反应装置 |
Publications (2)
Publication Number | Publication Date |
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CN101582375A true CN101582375A (zh) | 2009-11-18 |
CN101582375B CN101582375B (zh) | 2015-06-24 |
Family
ID=38063386
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
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CNA2006101400740A Pending CN1959932A (zh) | 2005-10-20 | 2006-10-18 | 在等离子体反应装置中以均匀温度冷却晶片支撑的方法 |
CN2009101682825A Expired - Fee Related CN101699613B (zh) | 2005-10-20 | 2006-10-18 | 在等离子体反应装置中以均匀温度冷却晶片支撑的方法 |
CNA2006101400736A Pending CN1956143A (zh) | 2005-10-20 | 2006-10-18 | 具有均匀温度分布晶片支撑的电容耦合等离子体反应装置 |
CN200810178907.1A Active CN101582375B (zh) | 2005-10-20 | 2006-10-18 | 具有均匀温度分布晶片支撑的电容耦合等离子体反应装置 |
Family Applications Before (3)
Application Number | Title | Priority Date | Filing Date |
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CNA2006101400740A Pending CN1959932A (zh) | 2005-10-20 | 2006-10-18 | 在等离子体反应装置中以均匀温度冷却晶片支撑的方法 |
CN2009101682825A Expired - Fee Related CN101699613B (zh) | 2005-10-20 | 2006-10-18 | 在等离子体反应装置中以均匀温度冷却晶片支撑的方法 |
CNA2006101400736A Pending CN1956143A (zh) | 2005-10-20 | 2006-10-18 | 具有均匀温度分布晶片支撑的电容耦合等离子体反应装置 |
Country Status (5)
Country | Link |
---|---|
US (10) | US8221580B2 (zh) |
JP (2) | JP4520967B2 (zh) |
KR (2) | KR100878223B1 (zh) |
CN (4) | CN1959932A (zh) |
TW (5) | TWI358765B (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102918641A (zh) * | 2010-05-24 | 2013-02-06 | 朗姆研究公司 | 用于半导体衬底支撑件的温度控制的装置和方法 |
CN103794527A (zh) * | 2012-10-30 | 2014-05-14 | 中微半导体设备(上海)有限公司 | 静电卡盘加热方法及系统 |
CN105097402A (zh) * | 2014-05-23 | 2015-11-25 | 中微半导体设备(上海)有限公司 | 等离子体处理腔室及其直流电极和加热装置的复合组件 |
CN110301039A (zh) * | 2017-02-16 | 2019-10-01 | 朗姆研究公司 | Rf功率电子装置的冷却系统 |
CN111383882A (zh) * | 2018-12-27 | 2020-07-07 | 中微半导体设备(上海)股份有限公司 | 等离子体处理装置及用于该处理装置的基片支座 |
CN111383885A (zh) * | 2018-12-27 | 2020-07-07 | 中微半导体设备(上海)股份有限公司 | 一种能提高控温精度的基片安装台及等离子体处理设备 |
CN112602178A (zh) * | 2018-09-07 | 2021-04-02 | 东京毅力科创株式会社 | 温度调节系统 |
CN114175208A (zh) * | 2019-07-25 | 2022-03-11 | 朗姆研究公司 | 衬底处理系统中非均匀性的原位实时感测和补偿 |
Families Citing this family (120)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10216786C5 (de) * | 2002-04-15 | 2009-10-15 | Ers Electronic Gmbh | Verfahren und Vorrichtung zur Konditionierung von Halbleiterwafern und/oder Hybriden |
US7789962B2 (en) * | 2005-03-31 | 2010-09-07 | Tokyo Electron Limited | Device and method for controlling temperature of a mounting table, a program therefor, and a processing apparatus including same |
US7718225B2 (en) * | 2005-08-17 | 2010-05-18 | Applied Materials, Inc. | Method to control semiconductor film deposition characteristics |
US8157951B2 (en) * | 2005-10-11 | 2012-04-17 | Applied Materials, Inc. | Capacitively coupled plasma reactor having very agile wafer temperature control |
US8034180B2 (en) * | 2005-10-11 | 2011-10-11 | Applied Materials, Inc. | Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor |
US7988872B2 (en) * | 2005-10-11 | 2011-08-02 | Applied Materials, Inc. | Method of operating a capacitively coupled plasma reactor with dual temperature control loops |
US8092638B2 (en) | 2005-10-11 | 2012-01-10 | Applied Materials Inc. | Capacitively coupled plasma reactor having a cooled/heated wafer support with uniform temperature distribution |
US8221580B2 (en) * | 2005-10-20 | 2012-07-17 | Applied Materials, Inc. | Plasma reactor with wafer backside thermal loop, two-phase internal pedestal thermal loop and a control processor governing both loops |
KR100706790B1 (ko) * | 2005-12-01 | 2007-04-12 | 삼성전자주식회사 | 산화 처리 장치 및 방법 |
US8226769B2 (en) * | 2006-04-27 | 2012-07-24 | Applied Materials, Inc. | Substrate support with electrostatic chuck having dual temperature zones |
US9275887B2 (en) | 2006-07-20 | 2016-03-01 | Applied Materials, Inc. | Substrate processing with rapid temperature gradient control |
JP4815295B2 (ja) * | 2006-07-26 | 2011-11-16 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
US20080121821A1 (en) * | 2006-11-27 | 2008-05-29 | Varian Semiconductor Equipment Associates Inc. | Techniques for low-temperature ion implantation |
US7528391B2 (en) | 2006-12-22 | 2009-05-05 | Varian Semiconductor Equipment Associates, Inc. | Techniques for reducing contamination during ion implantation |
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