CN101681695B - Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics - Google Patents

Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics Download PDF

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CN101681695B
CN101681695B CN2007800411276A CN200780041127A CN101681695B CN 101681695 B CN101681695 B CN 101681695B CN 2007800411276 A CN2007800411276 A CN 2007800411276A CN 200780041127 A CN200780041127 A CN 200780041127A CN 101681695 B CN101681695 B CN 101681695B
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substrate
assembly
strain
stretching
stretching assembly
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CN101681695A (en
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J·A·罗杰斯
M·梅尔特
孙玉刚
高興助
A·卡尔森
W·M·崔
M·斯托伊克维奇
H·江
Y·黄
R·G·诺奥
李建宰
姜晟俊
朱正涛
E·梅纳德
安钟贤
H-S·金
姜达荣
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University of Illinois
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University of Illinois
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30105—Capacitance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0313—Organic insulating material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0104—Properties and characteristics in general
    • H05K2201/0133—Elastomeric or compliant polymer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09009—Substrate related
    • H05K2201/09045—Locally raised area or protrusion of insulating substrate
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/02—Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
    • H05K2203/0271—Mechanical force other than pressure, e.g. shearing or pulling
    • H—ELECTRICITY
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
    • H—ELECTRICITY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/201—Integrated devices having a three-dimensional layout, e.g. 3D ICs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

In an aspect, the present invention provides stretchable, and optionally printable, components such as semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed, and related methods of making or tuning such stretchable components. Stretchable semiconductors and electronic circuits preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention are adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

Description

Be used for to stretch the semiconductor interconnect of electronic component and the controlled warp architecture of nanometer film
The cross reference of related application
The application requires to enjoy the U.S. Provisional Patent Application 60/944,626 submitted on June 18th, 2007 and the rights and interests of the U.S. Provisional Patent Application 60/824,683 submitted on September 6th, 2006.
Background technology
Since the all-polymer transistor of rollout printing in 1994, a large amount of concern of people has been directed to the possible new classification of electronic system, and it comprises the flexible integration electronic device on the plastic.[Science the 265th volume 1684-1686 page or leaf, author Garnier F., HajlaouiR., Yassar A. and Srivastava P.] recently, large quantity research has been directed to the material that the new solution of exploitation can be processed (solution processable), and it is used for conductor, dielectric and the semi-conductive element of flexiplast electronic device.Yet, progress in the flexible electronic component field, the development of being not only by new solution machinable material is driven, but also is that high-efficiency machining method and high resolution design technology by new apparatus assembly (component) geometry, device and the apparatus assembly that can be applicable to the flexible electronic device system driven.Be contemplated that materials, device architecture and manufacture method will play an important role in flexible integration electronic device, system and the circuit of the new classification that emerges rapidly.
Several important advantage that focus in the flexible electronic component field comes technology since then to provide.For example, the flexibility that these backing materials are intrinsic, and allow them to be integrated into many shapes, and this provides a large amount of useful device architectures, however these device architectures are impossible realize for the silica-based electronic device of traditional fragility.In addition, but the combination of solution processing assembly material and flexible substrate, make it possible to by continuously, at a high speed printing technology makes, this can produce electronic device in larger substrate zone with low cost.
The Design and manufacture of flexible electronic device shows good Electronic Performance, but also has some great challenges.At first, maturation method and most of flexible material of making traditional silicon base electron device are incompatible.For example, traditional high-quality inorganic semiconductor assembly is such as monocrystalline silicon or Ge semiconductor, usually by descending growing film and processed forming in the temperature (＞1000 degrees centigrade) of the melt temperature that significantly surpasses most of plastic or decomposition temperature.In addition, most of inorganic semiconductors are insoluble in essence and are convenient to solvent that solution is processed and transmitted.Secondly, although many amorphous silicons, organic or mix organic-inorganic semiconductor and be fit to include in flexible substrate and can process under relatively low temperature, these materials do not have the characteristic electron that good Electronic Performance can be provided for integrated-optic device.For example, have these thin-film transistors of the semiconductor element of being made by these materials, represented the field-effect mobility than little about three orders of magnitude of complementary monocrystalline silicon base device.Because these restrictions, flexible electronic device only limits to not require high performance application-specific at present, such as being used in for the switch element of the active-matrix flat-panel monitor with non-light emitting-type pixel and being used among the light-emitting diode.
Flexible electronic circuit all is the survey region of enlivening in a plurality of fields, comprises the electric activating surface of flexible display, arbitrary shape, such as electronic textile and electronics skin.These circuit often can't be in response to the change of structure because of it so that conductive component stretches, and can not fully adapt to their surrounding environment.Thereby under structural change serious and/or repeatedly, that these flexible circuits are easy to is impaired, electronics is degenerated and may be unreliable.Flexible circuit needs to stretch and flexible interconnection (interconnect), and this is interconnected in and remains intact stretched and lax circularly the time.
Can either bending have again flexible conductor, normally make by embedding metallic particles in the elastomer such as silicon.These conductive rubbers not only have mechanical elasticity but also have conductivity.The shortcoming of conductive rubber is included in high resistivity and the significant resistance variations under the extended state, thereby causes whole interconnection performance and less reliable.
The people such as Gray have discussed with the little processing bent wire that is encapsulated in the silicone elastomer and have constructed the elastomer electronic device, and it can bear the linear strain up to 54% when keeping conductivity.In this research, electric wire is formed helical spring shape.Compare with the linear electric wire of namely accusing fracture under low strain (for example, 2.4%), bent wire still keeps conductivity under obviously higher strain (for example, 27.2%).Such electric wire geometry depends on electric wire and passes through crooked and non-stretching ability of extending.This system controllably and accurately is being restricted aspect the ability of patterning in difformity and in the Different Plane, thereby has limited the ability that system is adapted to differently strained and crooked scheme.
Studies show that elasticity is stretchable metal interconnectedly to be increased on to the resistance of mechanical strain to some extent people such as (, 2006) Mandlik.The people such as Mandlik attempt to minimize this resistance variations by depositing metallic films on pyramid nano-patterning surface.Yet this research depends on fluctuating characteristic (relief feature), and it produces micro-crack and makes thin metal cords possess tensility.These micro-cracks promote the metallic elastic distortion by planar distortion and distortion.Yet these Metal Crack are not suitable for thick metal film, on the contrary, only are suitable for being deposited on the thin metal film (for example, at the order of magnitude less than 30nm) of the scope that is rather narrow on the elastomer of patterning.
Make the metal interconnected a kind of mode that possesses tensility be, at conductor (for example, metal) use during to the substrate prestrain (for example, 15%～25%), then carry out the physical relief of prestrain, thereby metallic conductor interconnection is introduced corrugated (such as seeing the people (2003) such as Lacour; (2005); (2004), the people such as Jones (2004); The people such as Huck (2000); The people such as Bowden (1998)).The people such as Lacour (2003) report, by at first compressing gold bar producing spontaneous wrinkling gold bar, thereby under up to 22% strain (gold thin film on the contrast elastomeric substrate only be the breaking strain of a few percent) conducting property of maintenance.Yet the metal film of relative thin layer (for example, approximately 105nm) is used in this research, and should research limitation comparatively because this system originally can form about 10% the electric conductor of can being stretched.
From the above, clearly exist tensility with improvement, electrical characteristics and under different structure, be used for fast and make reliably the interconnection of correlated process of the interconnection that can stretch and the needs of apparatus assembly.Progress in the flexible electronic component field, expection will be played an important role in multinomial emerging and important technology maturation.Yet, the success of the application of these flexible electronic component technology depends on the development to the manufacturing approach of the integrated electronic circuit that shows good electronics, machinery and light attribute under crooked, distortion and oblique structure and device to new material, device architecture and viable commercial consumingly.Particularly, but the structure of the materials and devices of high-performance mechanical stretching, need to stretch or compressed configuration in show useful electronics and mechanical property.
Summary of the invention
The invention provides tensile means and apparatus assembly, for example semiconductor and stretchable electronic device, and circuit.Need to stretch, flexible with consistent electronic device and apparatus assembly be used for making and be suitable for the electronic device that prints at various curved surfaces.The device that shape is consistent has various ranges of application, from flexible display and electronic textile, to consistent biology and physical sensors.Thereby one embodiment of the invention are flexible and flexible electronic device, apparatus assembly and for the manufacture of the correlation technique of flexibility and flexible device.This flexibility and flexible realize by interconnection or semiconductor film with wavy or warp geometry are provided.This geometry provides following mode, is used for guaranteeing that system can stretch and flexible, and performance is had no adverse effect, even also be like this under powerful and repeatedly stretching and/or bend cycles.In addition, described method provides the ability that makes geometry precision and accuracy, so that the physical characteristic of device and/or apparatus assembly (for example, tensility, flexible) capable of regulating is adapted to be fit to the service conditions of system.But another aspect of the present invention is the stretching assembly that has with at least part of relevant physical characteristic of strain, so that can regulate parameter by the strain that applies number change to assembly.
The array of apparatus assembly can be connected to each other by warp assembly or interconnection, so that apparatus assembly is easy to carry out uncorrelated movement relative to each other.Yet the regional area within this array can have the bending or the stretching requirement that are different from other zones.Apparatus and method for described herein promotes to create flexiblesystem, it can have in the warp assembly or the localized variation in the interconnect geometry, for example comprises assembly or interconnection: the sum of size, cycle, amplitude, orientation and assembly or interconnection in the specific region.Generation have controlled produce to a plurality of assemblies or interconnection, be easy to make assembly or the interconnection regulate adaptation for the operating condition of this device.
In one embodiment, but the present invention is the stretching assembly of device, wherein said assembly comprise first end, the second end and be arranged in first end and the second end between middle section.Assembly is supported by a substrate, and wherein the first end of assembly and the second end are attached to substrate, and at least a portion of the middle section of assembly has warp architecture.On the one hand, the middle section of this assembly not with this substrate physical contact.On the other hand, the middle section of assembly is under the strain.On the one hand, the strain of middle section is less than 10%, between 0.1% and 5%, and between 0.2% and 2%, or any subrange wherein.
In one embodiment, but the stretching assembly middle body is curved surface or arc.On the one hand, curved surface has amplitude, for example the amplitude between about 100nm and 1mm.On the one hand, the quantity of discrete assembly or the calmodulin binding domain CaM of interconnection can be altogether more than two, such as three, four or five.In this regard, in fact be subdivided into a plurality of warp architectures zone at the first end of assembly and the middle section between the second end so that formed a plurality of discrete curvature portion zone not with the substrate physical contact.In such configuration, amplitude and/or cycle can constantly also can change on the whole longitudinal length of assembly or interconnection.Assembly self can be arbitrary shape, for example film, line or belt.On the one hand, be that this band can have the thickness between about 300nm and 1mm in the situation of band at assembly.
For the ease of placing other apparatus assembly, the apparatus assembly that the assembly end is electrically connected to can be touch pad.On the one hand, other apparatus assembly is electrically connected with touch pad.
But stretching assembly comprises one or more materials alternatively, and it is metal, semiconductor, insulator, piezoelectric, ferroelectric material, magnetostrictive material, electrostriction material, superconductor, ferromagnetic material and thermoelectric material.
On the other hand, but stretching assembly comprises the assembly that is selected from the device in the following group: electronic device, optics, photoelectric device, mechanical devices and thermal device.
As described, the substrate of supporting component can be made by the material of any expectation, and this depends on the device of incorporating this assembly into.In one embodiment, substrate comprises elastomeric material, for example PDMS.Substrate can reversible deformability (for example, PDMS) or irreversible deformability (for example: plastics).In one embodiment, substrate self is layer or coating.
In one embodiment, can further describe device based on the physical characteristic of device.For example, in this assembly that provides and/or interconnection, can stand the strain up to 25%, simultaneously maintenance conducting and being electrically connected with apparatus assembly.In this case " maintenance " refer to during bearing strain, the reduction of conducting property is less than 20%, 10% or 5%.
In another embodiment, but the invention provides a kind of stretching assembly or interconnection, be used for to set up and being electrically connected of apparatus assembly.Device or interconnection have first end, the second end and be arranged at first end and the second end between middle body.Described end is incorporated into substrate, such as flexible (for example, can stretch) substrate, elastomeric substrate, rigid substrate, inelastic body substrate or wish the substrate of printed electronic device, apparatus assembly or its array thereon.Each end of assembly or interconnection all is attached to himself by the different apparatus assembly of substrate supports.The middle body of assembly or interconnection is in warp architecture, and not with substrate physical contact (for example, not in conjunction with).On the one hand, warp architecture is under the strain because of the central area.In this regard, warp architecture is generally curved surface, if so that adopt the mode that apparatus assembly is separated that power is applied to one or more apparatus assemblies (or below substrate), then assembly and interconnection curvature portion can be at least part of stretching to adapt to relatively moving between apparatus assembly, remain on simultaneously electrically contacting between the apparatus assembly.Assembly or interconnection alternatively with such as in the multiple geometry of bridge shape, flower shape any one and/or by a plurality of assemblies or interconnection with the electrical connection of adjacent island or touch pad.On the one hand, apparatus assembly and touch pad are electrically connected.
But any stretching assembly disclosed herein also comprises the apparatus assembly regulated of electronic device alternatively.Adjustable component has at least a following characteristic electron, and it optionally changes along with the strain of the middle section that is provided by warp architecture.For example, characteristic electron is electron mobility, resonance frequency alternatively, electricity is led with resistance in one or more.On the one hand, can regulate apparatus assembly and comprise transistorized semiconductor channel.
In one embodiment, described assembly has coefficient of strain optical coupled, and wherein adjustable component has at least a following optical characteristics, and it optionally changes along with the degree of strain of the middle section that is provided by warp architecture.The embodiment of the optical coupled of the coefficient of strain includes but are not limited to, and can regulate the refractive index of apparatus assembly, but or the incident wave beam of electromagnetic radiation with respect to the incidence angle on the surface of the middle body of described stretching assembly.In another embodiment, apparatus assembly be can regulate and waveguide, optical modulator, optical switch or filter comprised.
In another embodiment, but stretching assembly is the apparatus assembly regulated of device, and its thermal conductivity optionally changes along with the degree of strain of the middle section that is provided by described warp architecture.
In another embodiment, but stretching assembly is the thermal insulation assembly of device, wherein said middle section not with described substrate physical contact.In the one side of this embodiment, middle section not with the substrate thermo-contact, and one or more apparatus assemblies of central region support, thus so that by one or more apparatus assemblies and the isolation of substrate heat of central region support.A useful application of this respect is for the device as long wavelength's imaging system.
In another embodiment, but stretching assembly is the actuator of mechanical devices, and wherein middle section is curved surface, but and its amplitude can regulate by compression or stretching stretching assembly or by applying electromotive force to middle section.A kind of useful application in this embodiment is a kind of mechanical devices, and it is selected from the group that is comprised of following: micro electro mechanical device, nano-electromechanical device and micro-fluidic device.
In one embodiment, but have a plurality of assemblies and more than the device array of two apparatus assemblies by arbitrarily stretching assembly disclosed herein is included in, provide multiaxis to stretching and crooked.In this embodiment, each assembly provides electrically contacting between a pair of apparatus assembly.According to desirable stretching, bending and/or squeeze operation condition, device array can have the geometry of the grid of being in, flower shape, bridge shape or its combination in any (for example, a zone is in lattice structure, and another zone is in bridge shape structure).In addition, can be connected to more than an assembly (for example, a plurality of interconnection) by making the adjacent devices assembly, such as two, three, four assemblies, provide further control to stretching and flexible.For example, the apparatus assembly of square or rectangle can be adjacent with four other apparatus assemblies.If each phase adjacency pair is connected by two interconnection, then apparatus assembly will have eight interconnection from wherein stretching out.
In one embodiment, device array has along the multi-grade module of two different directions orientations at least.For example, in lattice structure, assembly can have two be perpendicular to one another or the orientation of quadrature so that the ability that stretches along both direction to be provided.In another embodiment, device array can comprise all the relative to each other assembly of alignment.This embodiment can be used on stretch or the crooked situation that is restricted to single direction under (for example: the electronic device structure is bent into periphery).By assembly is orientated along three or more directions, for example along three directions or four direction orientation, just provide extra bending and/or stretch capability.In one embodiment, place the different layers of any amount by making assembly in the device array, for example in two layers adjacent one another are, just provide extra control and stability.
In one embodiment, device array can stand up to 150% strain and not rupture.Geometry, orientation, amplitude, cycle and quantity by regulating interconnection for service conditions (for example, single shaft is to the contrast multiaxis to stretching and/or bending) make the breaking strain maximization.
The substrate that supports interconnection or device array thereon can have the part of at least one curved surface, for example concave surface, convex surface, hemisphere face shape or its combination.In one embodiment, but the device that comprises assembly is one or more in the following tensile means: photodetector, display, luminescent device, photoelectric device, sheet scanner, LED display, semiconductor laser, optical system, large area electron device, transistor or integrated circuit.
On the other hand, but the present invention relates to various distinct methods for the characteristic of the stretching assembly of regulating device.For example, a kind of control method can comprise provides following device, but it has stretching assembly, as open herein, and following assembly for example, it has first end; The second end; And place middle section between described first end and the second end, and this assembly is by substrate supports.Particularly, the first end of assembly and the second end are attached to described substrate, and at least a portion of the middle section of assembly has warp architecture and is under the specific strain degree.But by compression, elongation and/or stretching stretching assembly, but in stretching assembly, adjust degree of strain, thereby but the characteristic of regulating the stretching assembly of device.
On the one hand, described characteristic is one or more in light characteristic, electrical characteristics and the mechanical property, and such as the strain parameter of optical coupling, mechanical couplings or electric coupling, wherein the amplitude of individual features depends on strain at least in part.On the other hand, but the group that described characteristic is selected from that resonance frequency, electron mobility, resistance, electricity are led, the incident wave beam of refractive index, thermal conductivity and electromagnetic radiation forms with respect to the incidence angle on the surface of the middle body of described stretching assembly.
On the one hand, but a kind of method of making the stretching assembly of device is provided.In this embodiment, provide to have the elastomeric substrate of admitting the surface, this admittance surface has the first degree of strain, and wherein strain is zero alternatively, compresses or elongation.One or more apparatus assemblies are incorporated into the admittance surface with first degree of strain.Apply power to elastomeric substrate, thereby produce the change from the first degree of strain to the second degree of strain of degree of strain.The amplitude of this change, or how to finish change, not very important, as long as the change of degree of strain from the first degree to the second degree causes assembly crooked, but thereby produce described one or more stretching assembly, the middle section that each has the first end that is attached to substrate and the second end and provides in warp architecture.
By any suitable mode apparatus assembly is attached to described substrate.In one embodiment, integrating step comprises, but produce the combination of stretching assembly and the pattern of calmodulin binding domain CaM not, but wherein the calmodulin binding domain CaM of stretching assembly is incorporated into elastomeric substrate, but and the not calmodulin binding domain CaM of wherein said stretching assembly be not joined to elastomeric substrate.
On the other hand, but calmodulin binding domain CaM is not corresponding to the middle section of stretching assembly, and the step that wherein power is applied to elastomeric substrate causes middle section crooked, but so that at least a portion middle section of each stretching assembly not with the substrate physical contact.On the one hand, power is applied to the step of elastomeric substrate, causes middle section crooked, but so that at least a portion of the middle section of each stretching assembly not with the substrate physical contact.
In one embodiment, but but but for the manufacture of any method of stretching assembly also be included on the stretching assembly, on the admittance surface of elastomeric substrate or not only on the stretching assembly but also on the admittance surface in elastomeric substrate, produce the pattern of binding site.
In another embodiment, any described method or device all have the elastomeric substrate with a plurality of flexible regions and a plurality of rigid regions.This substrate makes the flexural rigidity of flexible region less than the flexural rigidity of rigid region, and has alternatively: but the first and second ends of each stretching assembly, and it is attached at least one rigid region; But and the middle section of each stretching assembly, it is attached at least one flexible region.Just can realize based on the pattern of the flexibility of below substrate the warp controlled of this assembly with this substrate type.
In one embodiment, the power machinery that is applied to elastomeric substrate is realized.In one aspect of the invention, the first degree of strain, the second degree of strain or both, produce in the following way: stretch or the compresses elastomeric substrate, the curing elastomer substrate, or pass through hot mode, for example by improving or reduce the temperature of described elastomeric substrate, or bring out contraction by thermal expansion or the heat of elastomeric substrate.
In another embodiment, one or more apparatus assemblies are attached to this step of admittance surface of elastomeric substrate, before following steps, carry out, namely, apply power to elastomeric substrate, this power makes the change of degree of strain generation from the first degree to the second degree of strain that is different from the first degree at substrate.Alternatively, this integrating step is carried out after following steps,, applies power to elastomeric substrate that is, makes the change of degree of strain generation from the first degree to the second degree of strain that is different from the first degree in substrate this.
In one embodiment, any one equals 0 in the first degree of strain or the second degree of strain.On the one hand, any one apparatus assembly comprises interconnection or electrode.
In another embodiment, the present invention relates to for the manufacture of making up and the warp assembly that is electrically connected of apparatus assembly or the various distinct methods of interconnection.On the one hand, the pattern of binding site is applied to elastomeric substrate surface, assembly or interconnection or both.Apply power so that substrate and produce strain with the contacted assembly of this substrate or interconnection.The pattern of binding site provides combination between specific components or interconnect location and substrate.The substrate in case (by elimination power) relaxes just produces warp assembly or interconnection.In amplitude, binding site pattern, geometry and the interval of prestrain one or more are changed, just produce assembly or interconnection with different warps or wavy geometry.For example, the position of staggered binding site is so that adjacent assembly or be interconnected in different positions and be attached to substrate just provides " out-phase " interconnect geometry.The binding site patterning adopts any mode well known in the art, for example curable photosensitive polymer is applied to the elastomeric substrate surface.Assembly or interconnection are encapsulated in the encapsulating material such as elastomeric material by at least a portion with assembly or interconnection alternatively and protect.Warp assembly or interconnection can have any pattern that is suitable for this application.In one embodiment, pattern is lattice structure, flower-like structure, bridge shape structure or its combination in any.
Described method and device can have the assembly of any size, and the thickness in for example from 10 nanometers to about 1 millimeter scope is perhaps greater than the thickness of about 300nm.On the one hand, the warp assembly has the corresponding amplitude of maximum perpendicular displacement that begins from substrate with interconnection, and this amplitude is selected from the scope between 100nm and 1mm.For the assembly band with length and width, width, amplitude or width and amplitude are alternatively along the length variations that interconnects.A factor that affects amplitude is, assembly in conjunction with before or assembly in conjunction with after be applied to the strain of elastomeric substrate.Usually, strain is higher, and amplitude is larger.In one embodiment, applied force produces strain in elastomeric substrate, and strain is selected from the scope between 20% and 100%.
In one embodiment, assembly is the interconnection that is electrically connected to apparatus assembly.This any system that represents and process choosing a kind of substrate is provided, it can stretch up to about 100%, compression is up to about 50%, or is bent into the low radius of curvature that reaches 5mm, and the fracture of unlikely assembly.Described assembly is made by the material that is fit to arbitrarily, such as metal, semiconductor--comprise GaAs or Si, insulator, piezoelectric, ferroelectric material, magnetostrictive material, electrostriction material, superconduction, ferromagnetic material and thermoelectric material.In one embodiment, described method is used for the warp assembly is transferred to device substrate such as the curved surface device substrate from the elastomeric substrate such as die (stamp).
Can admit the surface by assembly material is coated to, such as the admittance surface with fluctuating feature, running surface is for example made and can be stretched and flexible interconnection, rather than by apply the assembly that power or strain produce projection or warp to elastomeric substrate.
In one embodiment, can stretch and flexible assembly for making, have from the teeth outwards smoothedization of substrate of wavy feature, for example spin on polymers is partly to fill recess feature.The level and smooth wavy substrate of partially filled generation.Subsequently, include but not limited to the assembly of metallicity, be deposited as required with patterning to level and smooth wavy substrate.At the assembly of admitting on the surperficial substrate, can be used for subsequently facing to being moulded the condensate die coated with the substrate of assembly at least.By from substrate removal condensate die, assembly is transferred to elastomeric substrate, can stretch and flexible assembly to make.In one embodiment, the interface between assembly and substrate is Au/Su-8 epoxy resin photoresist.Assembly can be layered metal, for example, and Au/Al.Substrate is layering similarly, and for example glassy layer supports the Su-8 layer, and the actual interface between metal and substrate is Au/Su-8.
Be used for a kind of alternative method at the projection assembly of stamp surfaces manufacturing such as projection interconnection, depend on: with the curved substrate flattening surface, assembly is touched the surface that is flattened, then allow lax its surface geometry shape of getting back to of substrate surface.In one embodiment, described method also provided the spatial patterned to binding site before contact, as said.In this embodiment, described method is particularly suited for interconnection and apparatus assembly are transferred to corresponding the second curved substrate surface.On the one hand, combination, for example adhesive or adhesive precursor are created in interconnection system on the first surface substrate and the combination between the second curved substrate, be enough to allow interconnection system is transferred to the second substrate, even if also be like this after elastomeric stamp is removed.
On the one hand, any means of the present invention and device have die or elastomeric substrate, and it is PDMS, have linearity and elastic response for the strain up to about 40%.Interconnection of the present invention is the part of electrode, can stretch passive matrix light-emitting diode display or photodetector array that can stretch alternatively.In one embodiment, the present invention is a kind of stretching electronic device, it is with any one or a plurality of interconnection of being made by method of the present invention, and wherein electronic device is can stretch or flexible: electrode, passive matrix LED, solar cell, light collector array, biology sensor, chemical sensor, photodiode array or semiconductor array.On the one hand, being electrically connected to the apparatus assembly of warp interconnection, is film, transducer, circuit element, control element, microprocessor, converter or its combination.On the one hand, be electrically connected to apparatus assembly by an end that will interconnect, connect interconnection.
In one embodiment, the present invention relates to have method and structure such as the wavy nanometer film of wavy semiconductor nano film.Wavy nanometer film like this is easy to make apparatus assembly self to possess flexibility (with respect to the flexibility of the interconnection that apparatus assembly is coupled together).On the one hand, the present invention be a kind of twin shaft of making to the method for the semiconductor film that can stretch, it is second substrate of semiconductor nano membrane material from the first substrate transfer to distortion, wherein the substrate of distortion is allowed to relax and gets back to its idle structure transfer printing after.On the one hand, the thickness of semi-conducting material is between about 40nm and 600nm.Discharge two-dimentional deformation force, generation has the nanometer film of two-dimentional wavy texture.On the one hand, deformation force is produced by the temperature that changes elastomeric substrate.
In one embodiment, provide a kind of for the manufacture of stretching and the method for flexible substrate, comprising: following substrate is provided, and it has the admittance surface with one or more fluctuating features; Come so that the fluctuating feature is level and smooth by spin on polymers, so that conformal coating admittance is surperficial at least in part; Face toward by the substrate molded polymer die of spin coating; From the substrate removal polymer stamp, has the polymer stamp of fluctuating feature with exposure; And has the described polymer stamp surface deposition device assembly of fluctuating feature; Thereby be manufactured on can stretch and flexible device in use stretch and flexible assembly.On the one hand, fluctuating is characterized as wavy shape.
In one embodiment, described assembly comprises metal, and this metal perhaps passes through: shadowmask is provided by the method deposition of electrode deposition; Shadowmask is contacted with running surface; And by the shadowmask evaporated metal, to produce corresponding metal pattern at running surface.Has the substrate of wavy feature alternatively by anisotropic etching Si (100) or by the Su-8 embossing is prepared.Running surface has the wavelength that is selected from the 50nm-1mm scope alternatively; Has the amplitude that is selected from the 100nm-1mm scope; And can stretch and not rupture up to 100%.Alternatively, this assembly is transferred to device substrate.On the one hand, apparatus assembly comprises interconnection, and described method also comprises the electrical connection between the end that other apparatus assembly is provided and is created in interconnection and the other apparatus assembly.
On the other hand, the invention provides a kind of method of making device by the heterogeneous integrated technology of the heterogeneous integrated and/or device level of material level.Method for the manufacture of device of the present invention comprises the steps: that (i) provides following substrate, and it adopts the pre-patterning of one or more apparatus assemblies by the admittance surface support of substrate; And (ii) pass through described printable semiconductor elements contact print on the admittance of substrate structure surperficial or that arrange on it, a plurality of printable semiconductor elements are assembled on the substrate, wherein at least a portion printable semiconductor elements be positioned so that they with by one or more apparatus assemblies of substrate supports: spatial alignment, electrically contact or not only spatial alignment but also electrically contact.In one embodiment, each includes single inorganic semiconductor structure printable semiconductor elements, it has: be selected from about 100 nanometers to the length of about 1000 micrometer ranges, be selected from about 100 nanometers to the width of about 1000 micrometer ranges, and be selected from about 10 nanometers to the thickness of about 1000 micrometer ranges.
On the other hand, the invention provides a kind of method of making multistage device architecture by the heterogeneous integrated and/or heterogeneous integrated technology of device level of material level.Method for the manufacture of device of the present invention comprises the steps: that (i) provides following substrate, and it adopts the pre-patterning of one or more apparatus assemblies that is supported by the admittance surface of substrate; (ii) by printable semiconductor elements contact print to the admittance surface of substrate or on setting one or more structures thereon, at first group of printable semiconductor elements of substrate assembling, thereby is produced the first device layer; (iii) provide an intermediate layer at first group of printable semiconductor elements, this intermediate layer has one and admits the surface; And (iv) by printable semiconductor elements contact print to the admittance surface in intermediate layer or on setting one or more structures thereon, at second group of printable semiconductor elements of substrate assembling, thereby is produced the second device layer.In one embodiment, at least a portion spatial alignment of printable semiconductor elements at least a portion in the printable semiconductor elements in the first device layer and the second device layer, electrically contact or not only spatial alignment but also electrically contact.This concrete grammar on the one hand of the present invention also comprises the steps: to be structured in the electrical connection between at least a portion of the printable semiconductor elements in the first device layer and the printable semiconductor elements at least a portion in the second device layer.
The useful method of contact printing that is used in the method assembling, tissue and/or integrated printable semiconductor elements comprises and does transfer printing contact print, little contact or nano contact printing, little transfer printing or nanometer transfer printing and the auxiliary printing of self assembly.Contact print is of value to the present invention because it allow a plurality of printable semiconductors relative to each other selected to position assembling and integrated.Contact print in the present invention also allows different classes of material and structure--comprise that semiconductor is (for example, inorganic semiconductor, single crystal semiconductor, organic semiconductor, carbon nanomaterial, etc.), dielectric, conductor--carry out effective transfer printing, assembling and integrated.Method of contact printing of the present invention provides alternatively, on respect to one or more pre-selected locations and spatial orientation that are patterned in advance the apparatus assembly on the device substrate, printable semiconductor elements is carried out pinpoint accuracy record transfer printing and assembling.Contact print also is compatible with the plurality of classes substrate, comprising: traditional rigidity or semi-rigid substrate, such as glass, pottery and metal; And have the physics that is suitable for application-specific and the substrate of mechanical property, such as flexible substrate, flexible substrate, plastic substrate, deformable substrate and/or the substrate that can stretch.The contact print assembly of printable semiconductor structures for example can be compatible with K cryogenic treatment (for example, being lower than 298K).This comprises the backing material that those at high temperature decompose or degenerate, such as polymer substrate and plastic owing to allowing to use multiple backing material to realize existing optical system.To the device element carry out contact print transfer printing, assembling and integrated also be useful because it can realize by printing technology and the system of low cost and high production, for example volume to volume printing and flexographic printing method and system.
In the specific embodiment of the method for current manufacturing device, at least a portion of printable semiconductor elements comprises the heterogeneous semiconductor element.Multiple heterogeneous semiconductor element can be used for the present invention.In an embodiment or embodiment, the heterogeneous semiconductor element comprises that combination has the inorganic semiconductor structure of one or more following structures, and described structure comprises a kind of material that is selected from by the following group that forms: have from the inorganic semiconductor of the different formations of described inorganic semiconductor structure, have inorganic semiconductor, carbon nanomaterial or its film, organic semiconductor, dielectric material and the conductor of different doping ratios with described inorganic semiconductor structure.In one embodiment, for example, the heterogeneous semiconductor element comprises the combination of two kinds of different semi-conducting materials, and described semi-conducting material is selected from the combination by the following group that forms: monocrystalline silicon, Si, Ge, SiC, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InP, InAs, GaSb, InP, InAs, InSb, ZnO, ZnSe, ZnTe, CdS, CdSe, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, PbS, PbSe, PbTe, AlGaAs, AlInAs, AlInP, GaAsP, GaInAs, GaInP, AlGaAsSb, AlGaInP, SiGe and GaInAsP.In one embodiment, for example, the heterogeneous semiconductor element comprises the inorganic semiconductor structure, and this textural association has dielectric material, conductor or existing dielectric material that conductor is arranged again.
But but useful heterogeneous semiconductor element also comprises printing device assembly and printing device.In one embodiment, for example, but printable semiconductor elements comprises the one or more printing assemblies that are selected from the group that is comprised of following device: electronic device, electronic device array, optics, photoelectric device, micro-fluidic device, MEMS (micro electro mechanical system), nano-electromechanical system, transducer, integrated circuit, microprocessor and memory device.
In specific method, at least a portion heterogeneous semiconductor element comprises one or more printable semiconductor devices, and it is selected from the group that is comprised of following: diode, transistor, photovoltaic cell, light-emitting diode, laser, PN junction, thin-film transistor, High Electron Mobility Transistor, photodiode, mos field effect transistor, metal-semiconductor field effect transistor, photodetector, gate device and vertical cavity surface light emitting laser.In one embodiment, for example, at least a portion printable semiconductor device is assembled on the substrate by contact print, so that the printable semiconductor device is set to electrically contact with the electrode that is patterned in advance on the substrate.
Method of the present invention can also comprise and be alternatively a plurality of following steps of iteration, that is, be assembled in printable semiconductor elements on the substrate or arrange on thereon the structure, on apparatus assembly structure, interlayer structure and/or complanation layer or encapsulated layer.In one embodiment, for example, method of the present invention also comprise the steps: by with other printable semiconductor elements contact print to the admittance surface of substrate on the set semiconductor element, perhaps contact print is on the one or more intermediate structures between the lip-deep semiconductor element of the admittance that is arranged on substrate and the other printable semiconductor elements, at the other printable semiconductor elements of substrate assembling, thereby produce the multilayer device structure.
Multilayer device structure by this method manufacturing can comprise a plurality of device layers that separated by one or more intermediate layers; Wherein device layer comprises printable semiconductor elements.In certain embodiments, for example, device layer has and is less than or equal to 1 micron thickness, and wherein the intermediate layer has and is less than or equal to 1.5 microns thickness.In certain embodiments, the method for this respect also is included in and sets up the step that is electrically connected between the printable semiconductor that is arranged in the different layers.
A kind of ad hoc approach of this respect comprises the steps: that also (i) being printed on the admittance surface of described substrate or place, the top of the one or more structural printable semiconductor elements that are provided thereon, arranges the intermediate layer; (ii) pass through printable semiconductor elements contact print to the admittance surface in intermediate layer, to assemble other printable semiconductor elements.In one embodiment, for example, the other printable semiconductor elements of the lip-deep at least a portion of admittance that is arranged on the intermediate layer is positioned so that they with the lip-deep printable semiconductor elements spatial alignment of admittance that is arranged on substrate, electrically contact or not only spatial alignment but also electrically contact.The method of this respect can also comprise alternatively: (i) composition goes out one or more openings in the intermediate layer, thereby will be arranged on the lip-deep one or more printable semiconductor elements of admittance of substrate or be arranged on the regional exposure that this admits lip-deep one or more structures; And (ii) by the opening in following intermediate layer, admit lip-deep one or more structure and be arranged between the lip-deep semiconductor element of admittance in intermediate layer being arranged on the lip-deep printable semiconductor elements of admittance on the substrate or being arranged on this, foundation electrically contacts.
Method of the present invention can comprise a plurality of optional treatment steps.Method of the present invention also comprises the steps: admitting the surface that adhesive phase is provided, and wherein printable semiconductor elements is printed on the adhesive phase.Method of the present invention also comprises the steps: be printed on the admittance surface of substrate or its one or more structural printable semiconductor elements that arranges provides encapsulated layer or complanation layer.Method of the present invention also comprises the steps: to adopt one or more conductor material films by the deposition process patterning admittance surface or the one or more lip-deep printable semiconductor elements of admittance or one or more this lip-deep structures that are arranged at that are printed to substrate of substrate.Method of the present invention can be used for multiple substrate, includes but are not limited to: flexible substrate; Polymer substrate, plastic, substrate can stretch; Rigid substrate; Semiconductor wafer and moulding substrate.
The present invention also comprises by this method made device and system.Device of the present invention and system include but not limited to: electronic device, optics, photoelectric device, micro-fluidic device, MEMS (micro electro mechanical system), nano-electromechanical system, transducer, integrated circuit, microprocessor and memory device.
On the other hand, the present invention is that two dimension can stretch and flexible device.In this respect, described device comprises: have the substrate of contact surface, have herein assembly to be attached at least a portion on described substrate contact surface, wherein said assembly has the zone of at least one fluctuating characteristic area and at least one substantially flat; Wherein said fluctuating characteristic area has the part with described substrate separation, and the zone of described substantially flat is attached to described substrate at least in part.On the one hand, described at least one fluctuating characteristic area has the two-dimensional pattern of the fluctuating feature on substrate, for example has the wavy pattern with the contacted a plurality of contact areas in substrate contact surface.
In order to be easy to that assembly is attached to substrate, any one or boths' admittance surface can have the active region in assembly or the substrate, for example the active region pattern." active region " word is used for the device that general reference is used for the device of combination and/or is used for providing warp, for example by the one or more adhesives site pattern on described substrate contact surface or described assembly; Underlay pattern or the assemblies physical parameter selected, described parameter is selected from the one or more of following parameter: substrate or component thickness, modulus, temperature, composition, each parameter has spatial variations; The chemical modification of substrate surface; And the zone adjacent with the free edge of the lip-deep assembly of substrate contact.The common purposes of each is in these parameters, is easy to combination between they or assembly and the substrate, perhaps is provided for the mechanism of the controlled warp in space of generation component.For example, zone or a part of fluctuating characteristic area of substantially flat navigated to the active substrate zone, assembly can be by controllably perk, but to be provided for stretching assembly.
Any Apparatus and method for disclosed herein has the assembly that is selected from by in following one or more groups that form: metal, semiconductor, insulator, piezoelectric, ferroelectric material, magnetostrictive material, electrostriction material, superconductor, ferromagnetic material and thermoelectric material alternatively.Any Apparatus and method for disclosed herein is used for being selected from the device by the following group that forms alternatively, comprising: electronic device, optics, photoelectric device, mechanical devices and thermal device.
On the one hand, any two dimension can stretch and comprise the zone of substantially flat with flexible device, and it comprises that described interconnection fluctuating feature is electrically connected with at least two islands for the island that receives such as the apparatus assembly of interconnection fluctuating feature.
In one embodiment, any in device touch pad or the admittance surface: smooth, substantially flat has the fluctuating feature, has curvature portion, has wavelike segments, or elastomer, such as PDMS substrate or substrate layer.
Description of drawings
Fig. 1 has summarized a kind of for the manufacture of the metal interconnected method that stretches wavy or warp.A is the flow chart summary, and B illustrates flow chart step.
Fig. 2 be stretchable wavy/photo of the electrical interconnection of warp, it is formed by following: be fetched into PDMS rubber substrate prestrain, stretchable from rigid substrate, then discharge stress, cause warp.
Fig. 3 summarizes a kind of by make the method for the wavy electrode that stretches in wavy texture elastomeric substrate deposition.
Fig. 4 provides the details of making the method for level and smooth wavy elastomeric substrate about a kind of.A is the flow chart summary, and B illustrates flow chart step.
Fig. 5 provides the image of the level and smooth wavy PDMS substrate that is produced by the method for summarizing in Fig. 3-4.Shown interconnection has 22.6% tensility, and has about 900nm thick metal interconnected (700nm aluminium/200nm gold), about 38 microns of wavelength, and about 15.6 microns of amplitude (distance from the crest to the trough).B illustrates for an end that makes up the interconnection that electrically contacts with apparatus assembly.This apparatus assembly can be positioned in the flat of described substrate.
Fig. 6: A illustrates and is with cuspidated commercial lens arra (from Edmund Optics).B illustrates spin coating can take a picture the epoxy resin that solidifies to make level and smooth wavy substrate.C illustrates the substrate casting PDMS die that leans on from B, the wavy elastomeric stamp that has smooth features with generation.
Fig. 7: pass shadowmask and deposit to stretched electrode on the level and smooth wavy elastomeric substrate by evaporation.Electrode keeps conductivity and connectivity during stretching up to～10% under tension force.Engineer's scale is about 0.1mm.A is the wavy sectional view on the elastomeric substrate.B is the microphoto vertical view that is evaporated to the electrode on the wavy elastomeric substrate.The focal plane is positioned on the sinuous crest.C is the microphoto vertical view that is evaporated to the electrode on the wavy elastomeric substrate.The focal plane is positioned on the sinuous trough.
Fig. 8 is with can the stretch schematic diagram of process of passive matrix light-emitting diode display of the electrode manufacturing that can stretch.
Fig. 9 diagram has the mechanical tensility of the passive matrix light-emitting diode display of corrugated electrode.
Figure 10 diagram is distributed in the inorganic photodiode array on the lens with sphere curved surface.Shown in: various lens shape and angle.
When Figure 11 is shown in plane lamina and is wrapped in around the spherical surface to the demand of tensility.
Figure 12 summarizes a kind of scheme for the manufacture of the warp semiconductor array that can stretch, and it can follow spherical curved surface.
Figure 13: the optical microscope image of the warp that can stretch silicon array, this array have single connection lattice structure (A and B), multi-link (for example, two connections) lattice structure (C), and flower-shaped syndeton (D).The interconnection that can stretch can be electrically connected photodiode, light collection/light detecting device, and other apparatus assemblies in for example touch pad location.These systems can be suitable for curved surface.Be positioned on the PDMS substrate in the structure shown in Figure 13 A-D.
Figure 14: the electron microscope image of the stretched warp silicon array in the lattice structure, this array can the supporting device assemblies and are suitable for curved surface.Engineer's scale is 200 μ m among the A, 50 μ m among the B.
Figure 15: the electron microscope image of the stretched warp silicon array in the lattice structure, this array have by the adjacent touch pad that is connected with each other of a plurality of (for example: 2) interconnection, and can the supporting device assembly and be suitable for curved surface.Engineer's scale is 200 μ m among the A, 50 μ m among the B.
Figure 16: be in the electron microscope image of the stretched warp silicon array of flower-like structure, this array can the supporting device assembly and is suitable for curved surface.Engineer's scale is 200 μ m among the A, 50 μ m among the B.
Figure 17: the electron microscope image of the stretched warp silicon array of bridge shape structure, this array can the supporting device assemblies and are suitable for curved surface.Engineer's scale is 200 μ m among the A, 50 μ m among the B.
Figure 18: the photo of the photodiode in the lattice structure on the stretched warp silicon array on PDMS.
Figure 19 illustrate can stretch be interconnected in stretch and relaxation period between reversible behavior.This system is lax in picture 1.This system is stretched shown in the stretching arrow in the picture 2,3 and 4.Maximum tension is about 10% in picture 4, and with regard to regard to the interconnection of tensile force direction alignment, has formed the interconnection of substantially flat.This system is lax in picture 5-8, and picture 8 has geometry and structure with the equivalence shown in the picture 1.Engineer's scale is 0.2mm.
Figure 20: " bubble die " or " balloon die " device, it can conformally touch curved substrate and planar substrate.
Figure 21: another kind can be suitable for the device of spherical curved surface and flat surfaces, is a kind of spherical molded die that stretches.This die leans on curved surface (being concavees lens in this embodiment) casting, and is removed.This die is stretched so that its surface flattens substantially, and interconnection can be transferred to this surface.
Figure 22: on " bubble " or " balloon " die at the stretched warp silicon array of cycle period that stretches.In this embodiment, the interconnection between adjacent touch pad comprises two wavy interconnection (Si thickness 290nm).This extension test uses air bubble expansion, so that multidirectional stretching to be provided.Rightmost picture is in maximum tension, and two pictures of below illustrate, and when tensile force was removed, lax their stretchings structure before of getting back to of interconnection was shown in upper left picture.
Figure 23: be printed onto the silicon on the glass lens that is coated with adhesive (PDMS or SU-8) by the balloon die.
Figure 24 has summarized the treatment step of the 3D warp shape that is used for the structure semiconductor nano-strip.
A: make the UVO mask, and use this mask to carry out patterning with effects on surface chemical substance on the PDMS substrate.B: form warp GaAs band, then they are embedded among the PDMS.The response of C: warp GaAs band to stretching and compressing.D: the SEM image that uses the sample of the process formation among a and the b.The prestrain that is used to form this sample is 60%, wherein W Act=10 μ m and W In=400 μ m.
Figure 25: use the end view profile of the warp that 33.7% prestrain forms at the PDMS substrate, wherein (A) W Act=10 μ m and W In=190 μ m; (B) W Act=100 μ m and W In=100 μ m.Break away from because will be with from PDMS, two samples all are presented in the warp in the non-active region.At W ActIn the situation of=100 μ m, the sine wave with little crest only forms in the active region.To the comparison of these two samples, show the W that selects less than critical value ActAvoided forming little wavy texture.
Figure 26: after microscopic section, the side elevation image of the warp GaAs band that in PDMS, embeds.This image shows that PDMS is full of the slit between band and the below substrate fully.Warp in the case is by 60% prestrain and W Act=10 μ m and W In=300 μ m form.Be cast in the lip-deep PDMS prepolymer of these warp bands, in stove, solidified 4 hours at 65 ℃.
Figure 27: the light micrograph of the side outline of (A and D) warp GaAs and (B, C) silicon ribbon.A: the GaAs band structure that is formed on the PDMS is patterned, wherein W Act=10 μ m and W In=190 μ m, different prestrains is: 11.3%, 25.5%, 33.7% and 56.0% (from top to bottom).ε Pre=33.7% and 56.0% dotted line is the interconnect geometry of mathematical prediction.B: at the Si band structure that the PDMS substrate forms, wherein prestrain is 50%, and with W Act=15 μ m and W In: 350,300,250,250,300 and 350 μ m (from left to right) patternings.This image is by taking sample inclination at 45° angle.C: be formed at the Si band structure on the PDMS substrate, prestrain 50%, and to become the adhesive site (W of 30 ° of angular orientations with respect to the length direction of being with Act=15 μ m and W In=250 μ m) parallel lines carry out patterning.This image passes through sample inclination 75 ° of shootings.D: be formed on the GaAs band structure on the PDMS substrate, prestrain 60%, wherein W Act=10 μ m and different W InFor: 100,200,300 and 400 μ m (from top to bottom).
Figure 28: the warp GaAs that is embedded among the PDMS of stretching and compression is with.A: the image that is stretched to the single warp band of elongation strain (positive %) in various degree.Near fracture 50%.B: the image that is compressed to the single warp band of compression strain (negative %) in various degree.Compression strain greater than～-15% the time, one section short and small wavy geometry appears at the crest place of warp.C: the image that is compressed to the single warp band of compression strain in various degree.Warp in these situations forms with 60% prestrain, wherein W Act=10 μ m and W In=400 μ m (A, B), and W Act=10 μ m and W In=300 μ m (C).Red line in each picture and arrow be illustrated in same with on same position, with outstanding mechanical deformation.Illustration provides the enlarged image with the part of white box mark, is shown clearly in the formation of rupturing under the high compression strain.Numeral corresponding to stretching or compression degree is to calculate according to following formula:
| L projected max - L projected 0 L projected 0 | * 100 %
Figure 29: have two-layer warp GaAs with the photo of the sample of array.This structure is with successively design manufacturing.Ground floor GaAs band (the warp geometry that limits, 60% prestrain wherein, W Act=10 μ m and W In=400 μ m) be embedded among the PDMS.Second layer warp band is formed on the surface of this substrate, uses prestrain 50%, wherein W Act=10 μ m and W In=300 μ m.
Figure 30: the warp band from the teeth outwards and the bending in PDMS matrix.A-C, warp GaAs band on PDMS--have (A) recessed surfaces, (B) flat surfaces, and (C) convex surfaces--(the picture left above), (right figure) and (lower-left figure) light micrograph of schematic representation of high power of low magnification ratio.Engineer's scale in c is applicable to a and b.D, be embedded in warp band among the PDMS before crooked (left side) and after bending the image on (right side).Upper figure and figure below illustrate respectively the curvature of upper surface and lower surface.Engineer's scale in the image on the right side also is applicable to the image on the left side.The warp band forms with 60% prestrain, wherein W Act=10 μ m and W In=400 μ m.
Figure 31: to the characteristic description of MSM-PD with low (MSM-PD) that can stretch.A: the schematic representation of geometry (figure top), equivalent electric circuit (figure middle part), and before stretching and during the optical imagery (figure bottom) of warp PD.B: electric current (I)-voltage (V) characteristic curve, the warp PD that record is thrown light on from the IR lamp with different output intensities.(C) be stretched or (D) be compressed in various degree and with the electric current (I) of the PD of constant light intensity irradiation-voltage (V) characteristic curve.
Figure 32: hemisphere elastomer transfer printing " die " can from conventional wafer " float off (liftoff) " interconnection Si CMOS " microchip ", then the geometry with them is transformed into hemisphere.The strain relevant with plane-surf deform regulated in " projection " interconnection between microchip.
Figure 33: the CMOS microchip of interconnection is transferred to the hemisphere device substrate that matches from the hemisphere die.The adhesive phase that solidifies of can taking a picture is attached to device substrate with CMOS, also makes this surface plane.
Figure 34: have the printer device with permanent plant, actuator and the vision system of hemisphere die compatibility.
Figure 35: the compressible array of the monocrystalline silicon island that on the hemisphere die, is electrically connected by the interconnection of " projection " band.
Figure 36: to radius of curvature be～optical imagery of the monocrystalline silicon island of the lip-deep interconnection of the hemisphere die of 2cm by " ink-jet ".
Figure 37: about the stress/strain curves of the various Different Silicon resin-elastomers that can be used for the hemisphere die.For for 20% strain, linear, perfectly elastic response is important.
Figure 38: in having the hemisphere die of initial uniform thickness 0.57mm, sphere is to the finite element modeling of the distortion on plane.
Figure 39: the indicative icon that is used for supporting at elastomer the step of making two dimension " wavy " semiconductor nano film.
Figure 40 (a-f): the light micrograph of each different phase of 2D wavy texture during the silicon nanometer film forms in the silicon nanometer film.Illustration illustrates two-dimentional energy spectrum.(g) at low enlargement ratio, the image of the structure of developing fully.For this example, the thickness of silicon is 100nm, and its lateral dimensions is about 4 * 4mm 2, substrate is PDMS, and heat to bring out prestrain be 3.8%.(h) corresponding to short wavelength's the figure of figure (a-f), and (i) be the long wavelength's that estimates of the various differences from figure (g) block diagram.
The wavy Si nanometer film of Figure 41: 2D (a) afm image on PDMS and (b-d) SEM image ((inclination angle) 60 °).The thickness of silicon is 100nm, and hot prestrain is 3.8%.These images are given prominence to the periodic character of wavy pattern height: the good combination between Si and PDMS, as in the edge of Si be etched in the close contact that can see near the PDMS place the hole among the Si and prove; And the shortage of the correlation between the position in wavy texture and these holes.
Figure 42: (a) have the light micrograph that the wavy Si nanometer film of 2D of different-thickness (55,100,260 and 320nm) forms with hot prestrain 3.8% at PDMS, and (b) short wavelength and amplitude with respect to the correlation of Si thickness.
Figure 43: (a) light micrograph of the wavy Si nanometer film of 2D under the different uniaxial strains that three different orientations apply.These samples are made of the thick Si film of the 100nm on PDMS, form with 3.8% hot prestrain.These images are collected at following state: the relaxed state before stretching (each figure of top), relaxed state after the stretching (bottom each figure), and be in single shaft to the elongation strain 1.8% that applies (in upper each figure) and 3.8% (in lower each scheme).(b) short wavelength is with respect to the correlation of the strain that applies at three different directions.
The afm image of the zones of different of the wavy silicon nanometer film of Figure 44: 2D is illustrated in the wavy geometric properties of 1D (upper figure) of film edge near zone, slightly leaves the zone (middle figure) of this fringe region, and near the zone (figure below) of these film central authorities.This sample is made of the upper thick Si film of 100nm of PDMS, forms with 3.8% hot prestrain.
The wavy Si nanometer film of Figure 45: 2D--the light micrograph that it has length 1000 μ m and has width 100,200,500 and 1000 μ m--.These films all have 100nm thickness, and with hot prestrain (a) 2.3% with (b) 4.8% be formed on the same PDMS substrate.(c) edge effect length is with respect to the correlation of the prestrain of similar film.
Figure 46: the light micrograph with the wavy silicon nanometer film of difform 2D: (a) circle, (b) ellipse, (c) hexagon, and (d) triangle.These films all have 100nm thickness, and are formed on the PDMS, and hot prestrain is 4.8%.
Figure 47: the light micrograph of the wavy texture of Si nanometer film, its shape are designed to utilize edge effect so that the 2D tensility to be provided in the interconnection array on smooth island.In described two kinds of situations, Si is that 100nm is thick herein, and square is 100 * 100 μ m, and the band connection is 30 * 150 μ m lines.Prestrain is (a, e) 2.3% and (c, g) 15%.The band of (a, c, e, g) and the SEM image of foursquare selected areas (75 ° at inclination angle) are shown respectively shown in (b, d, f, h).The illustration of the SEM image of magnification at high multiple is illustrated in the raised areas of the ripple among b and the d.
Figure 48 is the wavy Si nanometer film of 2D (thick, the 4 * 5mm of 100nm 2And 3.8% hot prestrain) sample--at PDMS substrate ripple (upper figure), and (i) the 1D ripple at edge, (ii) the fish-bone ripple of interior zone, and (iii) at the unordered fish-bone ripple at center--photo.Engineer's scale is 50 μ m.
Figure 49: the schematic diagram of the characteristic wavelength in the fish-bone wave structure.
Figure 50: the Si strain, along with in the variation of the hot prestrain that applies at fish-bone ripple and 1D ripple place and change.ε is passed through in the Si strain Si=(L-λ)/λ experiment records, and wherein L and λ are surface and the horizontal ranges in the AFM surface profile.
Figure 51: at extension test (about ε St=4.0%) optical microscope image of the fish-bone ripple after the circulation.Specimen is prepared as the thick silicon fiml of 100nm, and 3.8% twin shaft thermotropism prestrain.After the circulation of the extension test up to 15 times, the fish-bone ripple is resumed and has and initial very close structure, just has some to be derived from the defective of the fracture of film.
Figure 52: the schematic diagram of " expansion " that applies the fish-bone ripple of uniaxial tension strain.Elongation strain ε StPoisson effect cause compression strain ε Cp
Figure 53: during heating and temperature-fall period as the biaxial stretching test, the optical microscopic image of the metamorphosis of fish-bone ripple.Specimen is with the thick silicon fiml of 100nm and 2.9% twin shaft thermotropism prestrain and prepare.
Figure 54 summarizes a kind of method by the wavy electrode that stretches of following process manufacturing, that is, deposit at structural wavy mother matrix, and cast impression on this mother matrix is solidified this die subsequently, thereby and when discharging electrode is transferred to this mother matrix.
Figure 55 is provided at by the image of the method among Fig. 4 in conjunction with the stretched metal electrode (gold, 300nm is thick) on the prepared wavy PDMS of the method among Figure 54.Figure below is the chart that the measured resistance data of the corrugated metal electrode that can stretch changes along with the elongation strain that applies (up to 30%).
Figure 56 is that this method is for an embodiment of the application of making the flexible iLED strip light that can stretch.A illustrates the on a large scale microphoto of bending of this device, and in this embodiment, crooked radian is 0.85cm.B is provided at sectional view (upper figure, engineer's scale 40 μ m) and the vertical view (figure below, engineer's scale 3mm) of the stretched metal on the wavy PDMS substrate.In the situation that does not have significantly to degenerate in physical characteristic, this metal can stretch about 30%.C is local train for the curve of the effect of the wavelength (square, left axle) of the sinusoidal wave shape on PDMS metal interconnected (being shown among the B) and amplitude (circle, right axle).Along with strain increases, wavelength correspondingly increases, and the amplitude of this metal correspondingly reduces.
Figure 57: the schematic diagram of making the method for heterogeneous three-dimensional electronic device based on the printed semiconductor nano material.This process relates to nanotube in groups, nano wire, nanobelt or other active nano materials that will be respectively formed on the substrate of source, repeatedly be transferred on the common device substrate, have the electronic device of the interconnection of ultra-thin, multiple-level stack geometry with generation.
Figure 58 (A) will print the light micrograph that the silicon nanobelt is used for the 3-dimensional multi-layered stacked array of semi-conductive monocrystalline silicon MOS (metal-oxide-semiconductor) memory (MOSFET).The bottom of this image (being designated as " first "), middle part (being designated as " second ") and top (being designated as " the 3rd ") part, correspond respectively to have one deck, the zone of two layers and three layer devices.(B) schematic cross-sectional (on) and (descend) view that tilts, S, D and G be finger source electrode, drain and gate (all illustrating with gold) respectively, light blue and navy blue zone corresponding to silicon ribbon doping with unadulterated zone; The purple layer is SiO 2Gate-dielectric.(C) by similar at (A) with 3-D view (the left figure: vertical view that collects of the confocal microscope on the device substrate (B); Right figure: angled view).Each layer all is colored in order to watch (gold: top layer; Red: the middle level; Blue: bottom; Grey: silicon).(D) current-voltage characteristic curve of the Si MOSFET in every one deck shows good performance (mobility 470 ± 30cm 2/ Vs) and the good homogeneity of characteristic.Channel length and width are respectively 19 and 200 μ m.
Figure 59: (A) the three-dimensional heterogeneous integrated-optic device of three level stack--comprise the light micrograph of GaN nanobelt HEMT, Si nanobelt MOSFET and SWNT network TFT--.(B) 3-D view of being collected by confocal microscope.These layers are colored in order to check (gold: top layer, Si MOSFET; Red: middle level, SWNT TFT; Blue: bottom).(C) the electrical characteristics curve of the GaN device on the ground floor (channel length, channel width and grid width are respectively 20,170 and 5 μ m), SWNT device on the second layer (channel length and width are respectively 50 and 200 μ m), and the Si device on the 3rd layer (channel length and width are respectively 19 and 200 μ m).(D) device (the black square: Si MOSFET in every layer; Red circle: SWNT TFT; Green triangle: normalization mutual conductance (g GaN HEMT) m/ g 0m), along with the variation of the crooked radian of plastic and change (left figure).The image of bending system and sniffer (right figure).
Figure 60: (A) image of the printed array of the 3D silicon NMOS inverter on polyimide substrate.Inverter by be positioned on two different layers, MOSFET (channel length 4 μ m, load-driver Width 6.7, driver width 200 μ m) by the structure electrical interconnection forms.Top right plot provides the enlarged image in the zone that is marked by red square frame among the left figure.Bottom-right graph illustrates the transmission characteristic curve of typical inverter.(B) the transmission characteristic curve of the printing complementary inverter of use p raceway groove SWNT TFT (channel length and width are respectively 30 and 200 μ m) and n raceway groove Si MOSFET (channel length and width are respectively 75 and 50 μ m).Illustration provides the light micrograph of inverter (left side) and circuit diagram (right side).(C) GaAs MSM (channel length and width be respectively 10 with 100 μ m)--it is integrated with Si MOSFET (channel length and width be respectively 9 with 200 μ m)--is with the current-voltage response of 850nm wavelength infrared light supply under the different illuminances from dark to 11 μ W.Illustration illustrates optical imagery and circuit diagram.
Figure 61: the image in the automatic stage of transfer printing, it can be recorded to～1 μ m in.
Figure 62: (A) light micrograph of the three-dimensional heterogeneous integrated array of Si MOSFET and GaN HEMT on polyimide substrate.Right illustration illustrates schematic cross-section.Electrode (gold), SiO 2(PEO; Purple), Si is (light blue: as not mix; Dark blue: as to mix), GaN is (dark green: ohmic contact; Light green: raceway groove), polyimides (PI; Brown) and polyurethane (PU; Dark brown) all be illustrated.(B) current-voltage characteristic curve of typical Si MOSFET (channel length and width are respectively 19 μ m and 200 μ m) and GaN HEMT (channel length, channel width and grid width are respectively 20 μ m, 170 μ m and 5 μ m).The data of Si and GaN in left figure are respectively with V Dd=0.1V and V Dd=2V measures.
Figure 63: (A) light micrograph of the three-dimensional heterogeneous integrated array of the Si MOSFET on polyimide substrate and SWNT TFT.Right illustration illustrates schematic cross-section.Electrode (gold), epoxy resin (cyan), SiO 2(PEO; Purple), Si is (light blue: as not mix; Dark blue: as to mix), SWNT (grey), polyimides (PI; Brown) and the polyimides (dark brown) that solidifies all be illustrated.(B) current-voltage characteristic curve of typical SWNT TFT (channel length and width are respectively 75 μ m and 200 μ m) and typical Si MOSFET (grid length and channel width are respectively 19 μ m and 200 μ m).SWNT in left figure and Si are respectively at V Dd=-0.5V and V Dd=0.1V measures.
Figure 64: (A) schematic cross-section of the three-dimensional heterogeneous integrated array of the Si MOSFET on polyimide substrate, SWNT TFT and GaNHEMT.(B) several Si MOSFET (channel width=200 μ m, black line: channel length=9 μ m, red line: 14 μ m, green line: 19 μ m, blue line: transmission characteristic curve 24 μ m), effective mobility and ON/OFF ratio, (C) SWNT TFT (channel width=200 μ m, black line: channel length=25 μ m, red line: 50 μ m, green line: 75 μ m, blue line: 100 μ m) and (D) GaN HEMT (channel length, channel width and grid width are respectively 20 μ m, 170 μ m and 5 μ m) the transmission characteristic curve, mutual conductance and on-off ratio.
Figure 65: (A) be implemented in the schematic structure in the cross section of the SWNT-Si CMOS inverter on the silicon wafer substrate.(B) form the n raceway groove Si MOSFET of CMOS inverter and transmission and the I-V characteristic curve of p raceway groove SWNT TFT.The transmission characteristic curve of the inverter that (C) calculates, and Si and the transistorized I-V characteristic curve of SWNT.
Figure 66: cross section schematic construction and the circuit diagram of GaAs MSM-Si MOSFET infrared (IR) detector that (A) makes up in polyimide substrate.(B) current-voltage characteristic curve of GaAs MSN pyroscan (L=10 μ m, W=100 μ m), and transmission and I-V characteristic curve with Si MOSFET (L=9 μ m, W=200 μ m) of 3V power supply.(C) the IV characteristic curve of the GaAs MSM that calculates, and and have the I-V response of the integrated GaAs MSM of the SiMOSFET of 3V power supply.
Figure 67 has schematically shown a kind of optics (waveguide array), and it is made by the optical microstructures that partly is adhered to deformable substrate is carried out controlled warp.
Figure 68 schematically shows mechanical devices, and (for example: accelerometer/pressure sensor), it is made by the conductivity micro-structural that partly is adhered to deformable substrate is carried out controlled warp.
Figure 69 schematically shows thermal device (the hot instrument of microbolometer), and it is made by the adiabatic microstructure that partly is adhered to deformable substrate is carried out controlled warp.
Embodiment
" can stretch " and refer to that material, structure, device or apparatus assembly are subject to strain but the ability that do not rupture.In exemplary, stretchable material, structure, device or apparatus assembly can stand greater than about 0.5% strain and not rupture, preferably, for some application, can stand greater than about 1% strain and do not rupture, and more preferably, use for some, can stand not rupture greater than about 3% strain.
Term " assembly " is used to make a general reference the material that uses or independent assembly in device." interconnection " is an example of assembly, refer to can and assembly set up to be electrically connected or set up the electric conducting material that is electrically connected between assembly.Particularly, interconnection can be set up between assembly discrete and/or that can move relative to each other and be electrically contacted.According to device specification, operation and the application of expectation, interconnection is made by suitable material.For the application that requires high conductivity, can use typical interconnecting metal, include but are not limited to copper, silver, gold, aluminium and analog, and alloy.The conductive material that is fit to can comprise semiconductor, such as silicon, indium tin oxide target or GaAs.
" semiconductor " refers under extremely low temperature as insulator but have any materials of appreciable conductivity under about 300 kelvin degree.In this manual, the use of term " semiconductor " is intended to and is consistent in the use to this term of microelectronic component and field of electronic devices.Used semiconductor can comprise in the present invention: elemental semiconductor, such as silicon, germanium and diamond; And compound semiconductor, IV compound semiconductor for example is such as SiC and SiGe, III-V family semiconductor, such as AlSb, AlAs, AlN, AlP, BN, GaSb, GaAs, GaN, GaP, InSb, InAs, InN and InP, III-V family ternary semiconductor alloy is such as Al xGa 1-xAs, II-VI family semiconductor, such as CsSe, CdS, CdTe, ZnO, ZnSe, ZnS and ZnTe, I-VII family semiconductor, such as CuCl, IV-VI family semiconductor, such as PbS, PbTe and SnS, layer semiconductor is such as PbI 2, MoS 2And GaSe, oxide semiconductor is such as CuO and Cu 2O.Term " semiconductor " comprises intrinsic semiconductor and is doped with the extrinsic semiconductor of one or more selected materials, extrinsic semiconductor comprises the semiconductor with p-type dopant material and has the semiconductor of N-shaped dopant material, to provide given application or the useful characteristic electron of device.Term " semiconductor " comprises the synthetic material of the mixture that contains semiconductor and/or alloy.Include but are not limited to Si, Ge, SiC, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InP, InAs, GaSb, InP, InAs, InSb, ZnO, ZnSe, ZnTe, CdS, CdSe, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, PbS, PbSe, PbTe, AlGaAs, AlInAs, AlInP, GaAsP, GaInAs, GaInP, AlGaAsSb, AlGaInP and GaInAsP for the useful specific semi-conducting material of application more of the present invention.The porous silicon semi-conducting material can be used for the application of the present invention in transducer and field of light emitting materials, such as light-emitting diode (LED) and solid-state laser.The impurity of semi-conducting material is atom, element, ion and/or the molecule except semi-conducting material self or any alloy that offers semi-conducting material.Those impurity that may cause to the electrical attributes of semi-conducting material negative effect are not expect the material that occurs in the semi-conducting material, include but not limited to oxygen, carbon and comprise the metal of heavy metal.Beavy metal impurity includes but not limited to, the family of elements on the periodic table of elements between copper and the lead, calcium, sodium, and their all ions, compound and/or compound.
" semiconductor element " and " semiconductor structure " uses with the free burial ground for the destitute in this manual, and make a general reference any semi-conducting material, composition or structure, and the semi-conducting material, doped semiconductor materials, organic and inorganic semiconductor and the composite semiconductor material that clearly comprise high-quality monocrystalline and poly semiconductor, make by high-temperature process, and have one or more extra semiconductor subassemblies and/or the structure of non-semiconductor components, such as dielectric layer or dielectric material and/or conductive layer or electric conducting material.
The interconnection of " can stretch " used herein is be used to making a general reference following interconnection, this interconnection can one or more directions stand such as stretch, various power and strain the crooked and/or compression, but not to causing adverse effect to the electrical connection of apparatus assembly or from the conductivity of apparatus assembly.Thereby the interconnection that can stretch can be formed by the material of the relative fragility such as GaAs, even and if be subject to significant deformation force (as stretch, crooked, compression), but owing to the geometry of this interconnection, and still can continue to bring into play function.In exemplary embodiment, the interconnection that can stretch can stand not rupture greater than about 1%, 10% or about 30% strain.In one embodiment, this strain produces by the elastomeric substrate of the below that stretches, and wherein the part of this interconnection is incorporated into this substrate at least.
" apparatus assembly " is used for general reference at the independent assembly of electricity, optics, machinery or heating power device.Assembly can be one or more in photodiode, LED, TFT, electrode, semiconductor, other light collection/detection components, transistor, integrated circuit, the touch pad that can accept apparatus assembly, thin-film device, circuit element, control element, microprocessor, transducer and the combination thereof.Apparatus assembly can be connected to one or more touch pads well known in the art, for example, and for example application of evaporation of metal, wire-bonded, solid or conducting resinl.Electric device, be often referred to the device that is combined with a plurality of apparatus assemblies, and comprise large area electron device, printing board, integrated circuit, apparatus assembly array, biology and/or chemical sensor, physics (for example, temperature, light, radiation etc.) transducer, solar cell or photovoltaic array, display array, concentrator, system and display.
" substrate " refers to have and can support the material that comprises apparatus assembly or be interconnected in the surface of interior assembly." combination " to the interconnection of described substrate, refers to part this interconnection and this substrate physical contact and that can not significantly move with respect to its substrate surface that is attached to.In contrast, bound fraction then can significantly not move with respect to this substrate.The not bound fraction of interconnection for example forms by the interconnection of introducing strain is crooked usually corresponding to the part with " warp architecture ".
Be in the assembly of " the conformal contact " with substrate, refer to cover substrate and keep three-dimensional fluctuating characteristic and assembly that its pattern is determined by the pattern of the fluctuating characteristic on the substrate.
In the linguistic context of this specification, " warp architecture " refers to have owing to the power of being applied in the structure of curved configuration.Warp architecture in the present invention can have one or more fold domains, elevated regions, recessed region and combination in any thereof.Available warp architecture for example can be set to spiral structure, crease structure, warp structure and/or wavy (also namely, corrugated) structure in the present invention.
Warp architecture such as stretchable crooked interconnection, can be attached to flexible substrate at this warp architecture, for example polymer substrate and/or elastomeric substrate among the structure under the strain.In certain embodiments, warp architecture, crooked banded structure for example, in being preferred for the embodiment of some application, be in: be less than or equal to about 30% strain, be less than or equal to about 10% strain, the strain that is less than or equal to about 5% strain and is less than or equal to about 1%.In certain embodiments, this warp architecture, for example crooked banded structure is in: be selected from about 0.5% strain to about 30% scope, be selected from about 0.5% strain to about 10% scope, be selected from about 0.5% strain to about 5% scope.Alternatively, stretchable crooked interconnection can be attached to as the substrate of apparatus assembly and comprise self and the substrate of the substrate of inflexibility.That substrate self can be is smooth, substantially flat, curved surface, band sharp edges or above combination in any.Stretchable crooked interconnection can be used for being transferred to the substrate surface shape of any one or multiple such complexity.
What " thermo-contact " referred to bi-material can be with large calorimetric such as being delivered to the ability of cryogenic material by conduction from high-temperature material.Occupy the warp architecture on the substrate, be particularly useful for providing with this substrate being in the zone (for example, calmodulin binding domain CaM) of thermo-contact and not being in other zones (for example, and this substrate is heat insulation and/or the zone of physical separation) of thermo-contact with this substrate.
As long as it is crooked or stretch and do not rupture that geometry or shape are easy to interconnection, interconnection just can have geometry or the shape of any amount.Common interconnection geometries can be described to " warp " or " wavy ".On the one hand, can be by on the deformable substrate that power is applied to the below, and with power (for example, strain) is applied in the interconnection, so that the change in size of below substrate produces warp or wavy in interconnection, thereby obtain this geometry, because the some parts of this interconnection is incorporated into this substrate, but the zone between these constraint parts is not combined.Thereby single interconnection can be limited by the end that is incorporated into substrate and the central portion branch that is not attached to the bending of substrate between these ends." bending " or " warp " refers to the shape of relative complex, such as forming by the interconnection that has one or more extra calmodulin binding domain CaMs in middle body." arc " refers to basic for having the sinusoidal shape of amplitude, and wherein this amplitude is corresponding to the maximum separation distance between this interconnection and the substrate surface.
Interconnection can have any cross sectional shape.Wherein a kind of interconnection of shape is banded interconnection." band shape " refers to have the cross section of the basic rectangle of thickness and width.Specific dimensions depends on: by the expectation conductivity of this interconnection, the composition of this interconnection and the quantity that is electrically connected the interconnection of adjacent devices assembly.For example, the interconnection in the bridge shape structure that connects adjacent component can be different from the single interconnection that connects adjacent component dimensionally.Thereby, as long as the conductivity that produce to be fit to, these sizes just can be any suitable values, for example width between about 10 μ m and 1cm and thickness between about 50nm to 1, or the scope of the ratio of width and thickness is between about 0.001 to 0.1, and perhaps this ratio is about 0.01.
" elastomer " refers to be stretched or to be out of shape and returns at least in part its original shapes and the substantially polymeric material of permanent deformation do not occur.Elastomeric substrate is stood extensive strain usually.Current available exemplary elastomers substrate includes but are not limited to, and elastomer and synthetic material perhaps have the mixture of flexible elastomer, polymer and copolymer.In certain methods, by a kind of mechanism for elastomeric substrate is expanded along one or more main shafts is provided, to the elastomeric substrate prestrain.For example, can comprise expansion radially by this elastomeric substrate that expands along the first axle, provide prestrain, so that semispherical surface is transformed into flat surfaces.Alternatively, elastomeric substrate can expand along a plurality of axles, for example passes through along the first axle and second axle of quadrature location expand relative to each other.Come mode to the elastomeric substrate prestrain by the mechanism that provides elastomeric substrate to expand, comprise elastomeric substrate is carried out bending, rolling, deflection, flattening, expansion or other distortion.The mode of prestrain can also comprise the temperature by the lifting elastomeric substrate, thereby elastomeric substrate is carried out thermal expansion, and prestrain is provided.Can be used for elastomer of the present invention can include but not limited to, thermoplastic elastomer (TPE), styrene materials, olefin material, polyolefin, polyurethane thermoplastic elastomer (TPE), polyamide, synthetic rubber, PDMS, polybutadiene, polyisobutene, poly-(s-B-S), polyurethane, polychloroprene and silicones.
Change to L+ Δ L (applying under the power) for length from L (inactive state), wherein Δ L is the shift length of counting from inactive state, and strain is defined as: ε=Δ L/L.Axial strain refers to be applied to an axle of this substrate to produce the power of displacement L.Strain is also produced by the power that applies in the other direction, such as the combination in any of bending force, compression stress, shearing and above-mentioned power.Strain or compression also can produce by curved surface is drawn into the plane, or vice versa." degree of strain " refers to the amplitude of strain, and its excursion can be from bearing (corresponding to compression) to zero (relaxed state) to just (corresponding to prolonging or stretching) variation.
" Young's modulus " is a kind of mechanical property of material, device or layer, refers to for given material the ratio of stress and strain.Young's modulus can be provided by following formula;
Figure G2007800411276D00301
Wherein E is Young's modulus, L 0Be balance length, Δ L is the length variations under stress application, and F is applied force, is applied to the area on it and A is this power.Young's modulus also can be passed through following equation expression according to Lame constants:
E = μ ( 3 λ + 2 μ ) λ + μ ; - - - ( III )
Wherein λ and μ are Lame constants.High Young's modulus (or " high-modulus ") and low Young's modulus (" or low modulus ") are to the relative descriptors of the amplitude of Young's modulus in given material, layer or device.In the present invention, high Young's modulus is greater than low Young's modulus, uses preferably approximately large 10 times for some, uses more preferably approximately large 100 times for other, for also more preferably approximately large 1000 times of other application.The elastomer that has the spatial variations Young's modulus by polymerization, and/or by elastomer being carried out leafing to have different flexible a plurality of layers at various diverse locations, obtain the complex surface shape.
" compression " used herein used in the mode that is similar to " strain ", but refers in particular to for the characteristic length that reduces substrate or volume so that the power of Δ L＜0.
The physics that " fracture " or " breaking " refers in interconnection fractures, to such an extent as to this interconnection can not realize conducting of essence.
" binding site pattern " refer to, be applied to the support substrates surface and/or be applied to interconnection in connection with the mode space so that supported interconnection have the zone of being combined with substrate and with the uncombined zone of substrate.For example, be interconnected in its end and be incorporated into this substrate, but in then not combination of middle body.Can carry out further shape control, process is to provide extra binding site in middle body, so that calmodulin binding domain CaM is not divided into two discrete middle bodies.The polymer that combination can comprise adhesive, adhesive precursor, welding, photoetching and can take a picture and solidify.Usually, binding site can pass through the multiple technologies patterning, and can be described according to following,, can provide the surface activity (W of strong adhesive power between substrate and characteristic (for example: interconnect) that is Act) zone, and the relatively weak surperficial nonactive (W of bonding force In) zone.The substrate that adhesively is patterned to wire can be according to W ActAnd W InSize describe.The amplitude ε of these variablees and prestrain PreAffect interconnect geometry.
" space variable " refers to following parameter, and it has the amplitude that changes from the teeth outwards, and is particularly useful for providing the two dimension control to assembly fluctuating characteristic, thereby the space control for the flexible of device or apparatus assembly is provided.
" carbon nanomaterial " refers to that it comprises carbon atom such as next class formation, and has between at least a size between 1 nanometer and 1 micron.In one embodiment, at least a size of carbon nanomaterial is between 2nm and 1000nm.Carbon nanomaterial comprises the allotrope of carbon, such as Single Walled Carbon Nanotube (SWNT), multi-walled carbon nano-tubes (MWNT), nanometer rods, single wall and/or multiwall fullerene, graphite, Graphene, carbon fiber, carbon film, carbon whisker and diamond, and above-mentioned every derivative.
" spatial alignment " refers to the position and/or the orientation that limit relative to each other of two or more structures.The structure of spatial alignment can have position and/or the orientation of relative to each other preliminary election, for example, elects as in advance within 1 micron, uses preferably within 500 nanometers for some, and uses more preferably within 50 nanometers for some.
" heterogeneous semiconductor element " is multicomponent structures, and it comprises the semiconductor of one or more other materials of combination or structure.Other materials in the linguistic context of this specification can comprise different semi-conductive element, molecule and the synthetics that in the inner they made up with structure, condensate and particle thereof, the material and/or the structure that for example have different chemical composition and/or physical state (for example, crystallization, hypocrystalline or amorphous state).Useful heterogeneous semiconductor element comprises the inorganic semiconductor structure with other semiconductor material combinations in the present invention in this respect, other semi-conducting materials comprise doped semiconductor (for example, N-type and P type mix) and carbon nanomaterial or its film, dielectric material and/or structure and electric conducting material and/or structure.Heterogeneous semiconductor element of the present invention comprises having the structure that space uniform distributes, such as the Uniform Doped semiconductor structure, and comprise the structure with space uneven distribution, such as having the semiconductor structure of concentration with the alloy of one dimension, two dimension or three dimensions variation (being that the alloy spatial distribution is inhomogeneous in the semiconductor element).
Can further understand the present invention by following non-limiting example.All include this paper in to quote mode at these all lists of references of quoting, and not inconsistent with content disclosed herein.Although specification provided herein comprises many exclusive descriptions, these should not be construed as limiting the scope of the invention, and should be understood to only provide the illustration to current preferred embodiments more of the present invention.Therefore, scope of the present invention should be determined by appended claims and the institute that uses of equal value thereof, and be not by to embodiment definite.
Fig. 1 has summarized a kind of method for the manufacture of warp or wavy interconnection in general manner.Substrate 20 arrange metallicity part 10 (as will as the interconnection the metallicity part).For reducing viscosity, contacting metal characteristic and/or substrate surface are processed alternatively, for example by photoetching or use shadowmask.Between characteristic 10 and substrate 20, for example by micromachined, etching and/or mechanical scribing, introduce space (crack) 25.Metallicity part 10 adopts the elastomeric stamp 30 of compliance to obtain.Die 30 distortion subsequently produces the geometry of wavy or warp in metallicity part 10.The generation of warp provides by the die 30 that is under the strain when obtaining metallicity part 10 and discharge subsequently the tension force that applies, and perhaps provides by compress die 30 after obtaining the metallicity part.
Warp that the method summarized by Fig. 1 produces or an embodiment of corrugated metal characteristic have been shown among Fig. 2.Fig. 2 be stretchable wavy/photo of the electrical interconnection 40 of warp, its formation is undertaken by following process,, reverts to prestrain and stretchable PDMS rubber substrate 30 from rigid substrate that is, discharges subsequently strain, thereby produces warp.
A kind of method for generation of wavy stretch electrode and/or interconnection is provided in Fig. 3.As shown in Figure 3A, for example such as by micromachined, prepare wavy characteristic 22 at substrate 20.With the substrate 20 on the surface that contains wavy characteristic 22, as molded mother matrix with elastomeric stamp 30 of corresponding running surface 32.For example pass through the evaporation via shadowmask, and/or by electrode deposition, metallicity part 10 is deposited on the running surface 32.
Fig. 4 provides a kind of method for the manufacture of level and smooth wavy elastomeric substrate.Anisotropic silicon (100) etching provides substrate 20, and this substrate 20 has sharp-edged 24 (picture on Fig. 4 B-).By deposition PR 26 in the sharp-edged paddy 24 of substrate 20, PR is so that sharp-edged paddy becomes level and smooth in rotation.Facing to substrate 20 cast elastomeric dies 34.Die 34 has sharp-edged recessed feature part.The second elastomeric stamp 36 is cast on the die 34, has the die at sharp-edged peak with generation.Die 36 adopts Su-850 to carry out carve, and is suitably solidified.PR 26 is so that 50 sharp-edged paddy is level and smooth in rotation.Facing to 50 cast elastomeric substrates 30 with level and smooth paddy.Substrate 30 is removed, to represent wavy and level and smooth surface 32.
Figure 54 has summarized and has a kind ofly made the method for the wavy electrode that stretches by following process, and described process is, deposits at wavy mother matrix, and cast impression on this mother matrix is solidified this die subsequently, thereby when lax electrode is transferred to mother matrix.Figure 55 shows by the image of method among Fig. 4 in conjunction with prepared the stretched metal electrode on wavy PDMS of method among Figure 54 (Au, 300nm is thick).Between metallicity part 10 and substrate 20, interface 112 is shown.Interface 112 can comprise a kind of being easy to by remove the material of metallicity part 10 at the die 30 shown in the end picture.In brief, a kind of method is used: cleaning in advance 2 " x3 " on the glass slide, in 10 rotations of SU-8 shallow layer, so that glass surface is fully covered.Slide block/SU-8 is contacted with the PDMS die of the running surface characteristic with expectation (level and smooth paddy and sharp-pointed peak), and gently exert pressure, so that all air bags all are removed.With die/mould structure under ultra-violet lamp front side rapid curing 30 seconds, upset, and solidified again other 40 seconds at dorsal part.After solidifying, on hot plate, under 65 ℃, toasted 5 minutes.After baking, allow the sample cool to room temperature, and the SU-8 mould is peeled off from the PDMS mother matrix.SU-8 will have the running surface fluctuating with sharp-edged paddy now.In order to make these paddy level and smooth, with a SU-82 and a SU-8 mixing diluents, and with high rotating speed rotation 90 seconds.Be exposed to ultra-violet lamp 20 seconds to solidify, then 65 ℃ lower after baking 3 minutes.In case cooling by electrode deposition, chemical etching/float off, and/or by the shadowmask evaporation, comes plated metal line or contact.With MPTMS the metal on SU-8 was processed 1 hour, then facing to its cast elastomeric substrate.When being removed, the running surface that PDMS has with level and smooth peak and paddy rises and falls, and the metal structure that is transferred.Figure 55 is the photo by the wavy electrode that stretches of the process manufacturing of summarizing in Figure 54, and the measuring resistance data of function of the elongation strain that conduct applies (being up to 30%) of this corrugated metal electrode that can stretch also are provided.
An embodiment by the level and smooth wavy PDMS substrate 30 of the method manufacturing of summarizing among Fig. 4 is provided among Fig. 5.Apparatus assembly 60 can support to wavy substrate 30 according to being desirably in the non-wavy zone (for example, the part of substantially flat), and is connected to interconnection 10.
Fig. 6 shows smooth layer is spun to embodiment in sharp-edged paddy or the recessed feature part.Sharp-edged substrate 34 (Fig. 6 A) smoothing by spin coating photo-curing epoxy resin 26 is to produce level and smooth wavy substrate.(for example, PDMS) die 30, by against the substrate of Fig. 6 B casting PDMS die and remove die 30 from substrate 34 subsequently and obtain to have the elastomer of level and smooth running surface 32.
Fig. 7 is the photo of electrode of can stretching.Fig. 7 A is the photo of cross section with elastomeric substrate 30 of running surface 32.Fig. 7 B be by metal 10 being evaporated on wavy elastomeric substrate surface 32 and the electrode of making overlook microphoto.The focal plane of image is positioned on the sinuous peak.In Fig. 7 C, the focal plane is positioned on the sinuous paddy, and metal interconnected 10 electrically contact with electrode 250.The electrode that can stretch is to deposit to the evaporation on the level and smooth wavy elastomeric substrate by passing shadowmask.In this embodiment, under tension force, be stretched to be up to about 10% during, electrode 250 keeps conductivity and the connectedness by interconnection 10.
Method disclosed herein and device can be used for making multiple electronic device, for example comprise, passive matrix light-emitting diode display (seeing Fig. 8) can stretch.Corrugated electrode (for example, interconnection 10 and touch pad 70) is patterned on two elastomeric substrate 30.By transfer printing, apparatus assembly 60 (being the ILED pixel in the case) is patterned on touch pad 70 place's corrugated electrode.Two substrates 30 are correspondingly made up, so that interconnect 10 along different orientation (in this embodiment, vertical) trend.Figure 9 illustrates the 2-D machinery tensility of this type of passive matrix light-emitting diode display.Except can single shaft and biaxial stretch-formed, this display is bent without breaking significantly.Such multiaxis bending provides following ability,, electronic device is molded into curved surface that is, producing crooked electronic device, and is used for being integrated into smart electronics fabric construction or display.
A such embodiment of curved surface electronic device is provided in Figure 10.Figure 10 shows " artificial eye ", and it comprises the inorganic photodiode array that is distributed on the sphere curved surface lens.Show four different visual angles of this artificial array.In Figure 11, schematically show the requirement to stretchable plane electronics device.For plane lamina is reeled around spherical surface, this thin slice must stretch more than a direction.
Figure 12 is a kind of fabrication scheme, for the manufacture of the stretched warp semiconductor array that can be fit to curved surface.The thin silicon element adopts the deposition of on substrate selectable gold or titanium/gold to make, and substrate for example is at " the parent crystal sheet " shown in the picture (i).Silicon is incorporated into the PDMS (picture (ii)) of prestrain (being shown L+ Δ L) and UVO processing.Provide prestrain at both direction, as shown.Described combination realizes by the known in the field any instrument such as adhesive, for example is applied to silicon cell, substrate or is applied to these both.Combination tool is applied in the selected pattern so that silicon have with keep with the calmodulin binding domain CaM of this substrate physical contact (after distortion) and be in warp architecture and not with other zones of this substrate physical contact (for example unconjugated or be the zone of weak combination with respect to the bonding force of calmodulin binding domain CaM).Remove the substrate that prestress becomes from wafer substrates, with the flat grid (picture (iii)) that manifests semiconductor array.In case substrate is relaxed to L from L+ Δ L, interconnection 10 (is seen picture (iv)) in weak calmodulin binding domain CaM perk becomes warp architecture, and apparatus assembly 60 (for example, semiconductor silicon touch pad) keeps being attached to substrate 30.Thereby warp interconnection 10 has especially been introduced the ability of assembly 60 with respect to other assemblies 60 motions, and has not been destroyed electrically contacting between assembly 60, thereby provide conformal ability to curved surface or flexible surface to whole array introducing tensility.
Figure 13 provides the optical microscopic image (upper two width of cloth pictures) of the stretched warp silicon array in single lattice structure 140, has the lattice structure 160 (lower-left picture) of the interconnection of a plurality of connections, and flower-like structure 150 (bottom right picture).In all these embodiment, interconnection 10 is in the middle position perk, and interconnect is attached to touch pad 70.Interconnection and touch pad 70 are supported on the PDMS substrate 30.The close-up illustration of several different interconnect geometry further is provided in Figure 14-17.Figure 14 provides electron microscope image so that basic warp or wavy interconnection 10 to be shown, and this interconnection 10 has the middle body 90 with first end 100 and the second end 110.Middle body is warp architecture.End 100 and 110 is connected to apparatus assembly, and touch pad 70 can be set up with apparatus assembly and electrically contact in the case.Interconnection 10 and touch pad 70 are supported on the substrate 30, for example elastomer PDMS substrate.
Figure 15 is the electron microscope image by a plurality of (two) interconnection 160 adjacent devices assemblies connected to one another (for example, touch pad 70).Comparison shows that by Figure 15 and Figure 14 adjacent devices assembly 70 can be connected to each other by one or more interconnection 10, electronic device is provided extra flexibility.For example, have apparatus assembly or the touch pad 70 of relative large contact surface long-pending (footprint), be connected to another apparatus assembly by a plurality of interconnection alternatively.
Figure 16 is the electron microscope image that is in the interconnection of flower-like structure 150.With the lattice structure contrast, flower-like structure has along the interconnection that is orientated more than two longitudinal directions.In this embodiment, there are four independent orientations, so that the apparatus assembly such as touch pad 70 can contact the adjacent apparatus assembly in diagonal angle.In this embodiment, interconnection 10 has optional calmodulin binding domain CaM 102, and it occupy between interconnect 100 and 110, and interconnect 100 and 110 is electrically connected to an apparatus assembly (not shown), thereby with middle body 90 be divided into two uncombined regional 92, each all has warp architecture.
Figure 17 is the electron microscope image that is arranged in the interconnection in the bridge shape structure 130.In bridge shape structure, stretch out three or more interconnect from bridge central portion swarming 120.For example, two interconnection that intersect in calmodulin binding domain CaM not cause forming a peak 120, and this peak 120 has four interconnect of stretching out from it.Be in the situation of interlaced arrangement for apparatus assembly, peak 120 can have three ends that stretch out from it.In the situation that many interconnection connect between apparatus assembly, 120 can stretch out more than four ends from the peak.
Although be touch pad 70 at the apparatus assembly shown in these many accompanying drawings that provide, can be connected to a large amount of apparatus assemblies in this desired method and device, to provide stretchable and therefore deformable electronic device.For example, Figure 18 shows apparatus assembly 60, and it is by 10 photodiodes that are connected to other photodiodes in array structure of warp interconnection that support on elastomeric substrate 30.
Figure 19 shows the one dimension stretch behavior of warp silicon array.Picture (i) is the figure that does not apply the warp silicon array of any adaptability to changes.Apply a tensile force (shown in the arrow of picture (i) top) with this array that stretches in one direction.Shown in picture (2)-(4), the warp interconnection flattens.When discharging tensile force in picture (5), this array is got back to its warp structure (seeing picture (6)-(8)).Relatively demonstrating between picture (1) and (8), consistent with afterwards warp structure before stretching, this shows that this process is reversible.
The warp array of apparatus assembly can easily be transferred to curved surface, comprises rigidity or inelastic curved surface.The bubble of Figure 20 or balloon die 400 provide and have been used for being easy to curved surface is carried out a kind of device of conformal contact and the embodiment of process.Elastomeric substrate 30 is the thick PDMS films of about 20 μ m in this embodiment, is fixed in the shell chamber 300, so that the shell volume 310 that is limited by towards interior substrate wall and shell chamber to be provided.Apply positive pressure (for example, within chamber 300 greater than the pressure of external pressure) and produce protruding substrate surface 200, it can receive substrate with spill and carry out conformal the contact.On the contrary, buffer brake produces recessed surfaces 210, and it can receive with convex, and substrate is conformal to be contacted.The space of the local elasticity of substrate (for example, Young's modulus) is controlled and is allowed to produce complicated surface geometry shape.The lower-left picture of Figure 20 illustrate a kind of for by syringe to the chamber 310 introducings and gas bleeding and mode that the pressure of shell volume 310 is controlled.Image on the figure right side is the different curve of PDMS film that the positive pressure grade that increases is responded.Be used for providing any method of warp interconnection and device all can be used for using to the device of curved substrate transfer printing with this type of in elastomeric substrate.
Figure 21 has summarized the another kind of mode that produces warp or convex type (pop-up) interconnection at curved surface.One elastomer thin film is leaning on profiled surface and is casting, to produce at least part of elastomeric substrate as curved surface.This substrate can stretch flattening on the surface, also can be fit to flat surfaces so that this substrate can be fit to curved surface.In a single day interconnection is applied to flat stamps, and discharges tensile force, this substrate surface is lax gets back to the surface geometry shape, thereby produces strain in interconnection, and this strain is regulated by the projection of this interconnection middle body.
Figure 22 provides an embodiment who comes " two dimension " stretching warp silicon array by device shown in Figure 20.In this embodiment, this interconnection comprises that a plurality of warp interconnection that are in lattice structure connect, and wherein interconnect and are made by the thick silicon of 290nm.Originally be placed in the housing for smooth warp silicon array (the picture left above picture), and apply positive pressure this array is expand into bubble or balloon structure (for example, curved surface).Maximum swelling is shown in the rightmost image, and removes subsequently this positive pressure.Similar to the result of uniaxial tension flat substrate, this " bending " stretches reversible.Maximize the conformal any stage that contacts what expand with curved surface, this array can be transferred to curved surface by any mode well known in the art.Figure 23 illustrates the silicon printing of carrying out to the glass lens coated with adhesive (elastomeric substrate or SU-8) by the balloon die.Lens can be that concavees lens also can be convex lens.In this embodiment, respectively, R=19.62mm and 9.33mm.
Embodiment 1: the controlled warp structure in semiconductor nano-strip, and the application example in the electronic device that can stretch
For the nearly all application of these materials, importantly, to the control of composition, shape, locus and/or the geometry of nanometer semiconductor structure.Although have the method for the material composition that defines nano wire and nanobelt, diameter, length and location, almost do not have comparatively speaking new way to control their two and three dimensions (2D and 3D) structure.Provided herein is a kind of machinery strategy is used for being created in the 3D shape that nanobelt otherwise is difficult to some type of generating.This embodiment has introduced being used in combination of lithographic printing patterned surface chemical method, so that the space control to the adhesive site of support substrates and strain to be provided, thereby impels the local displacement of well-controlled.Accurately the warp geometry of design is created in the nanobelt of GaAs and Si in this way, and these structures all adopt this machine-processed analytical model to carry out quantificational description.As an application example, specific structure for make tensility (up to～100%), compressibility (up to～25%) and flexible with superelevation degree (radius of curvature is low to moderate～5mm) electronic device (and opto-electronic device) provides a kind of approach.
The 2D of nanobelt and nano wire and 3D structure, support or tubulose (or helical form) structure by in residual stress these elements being coupled to strained elastomer in the leafing system, using, growing period at them is controlled, to produce geometry in particular, such as coil, ring and branch's layout, or after their growth, be controlled, to produce for example sine curve wavy texture.Semiconductor nano-strip with wavy geometry receives publicity, partly cause is, they allow high-performance, stretchable electronic system to be used for potential application, such as the crooked focal plane array of sphere, intelligent rubber surgical glove and conformal structure health monitor.The stretchable approach of this electronic device self is to be different from and perhaps to be complementary to the alternative of rigid device island with these same application of stretchable metal interconnected use.Aforementioned wavy nanobelt has two major defects: (i) their spontaneous formation, limited fixing cycle and amplitude by the modulus of material and the thickness of band, thereby almost can't control geometry or the phase place of ripple, and (ii) limit by the wavy geometry of not optimizing that this process produces, the maximum strain that they can be regulated is in the scope of 20-30%.The process of herein introducing makes the surface cement site of offscreen restriction and the strain of support substrates, to adopt the certainty of warp geometrical shapes is controlled to realize the warp structure.For this class formation be organized on a large scale one group of optional independent nanobelt in the array, can carry out periodicity or acyclic design.So that range of strain can be up near 150%, even if also be so in the friable material such as GaAs, analytical model of mechanism is consistent therewith for this for the special geometry of the electronic device design that can stretch, and than large ten times more than of the results of previous report.
Figure 24 shows each step of this process.Manufacturing starts from the preparation to following mask, and this mask is used for patterning is carried out in the surface chemistry adhesive site on dimethyl silicone polymer (PDMS) elastomeric substrate.This process relates to makes deep UV (UV) light (240-260nm) pass a kind of amplitude photomask (by the step I preparation) of unique types, and it is called as the UVO mask, and it contacts with PDMS is conformal.The UVO mask possesses the recessed feature part of the fluctuating in transparent region, so that it is regional to form the patterning ozone that is close to the PDMS surface to the UV exposure.Ozone will not changed hydrophobic by-CH3 and-the H end group accounts for leading surface and changes into polarity and reactive higher surface (also namely, active surface), the result just has-OH and-function of O-Si-O-.Unexposed zone keeps unmodified surface chemical property (that is, inactive surface).The process of herein introducing relates at larger single shaft prestrain (ε Pre=Δ L/L changes to L+ Δ L for length from L) under, in (the exposure (step I i) on the thickness～4mm) of PDMS substrate.For the mask with simple periodic line pattern, we are expressed as W with the width of active striped (illustrating with the line that is designated as " active surface ") in the step (iii) of Figure 24 A and the width (for example, in the distance between the adjacent active striped) of nonactive striped in step (i) ActAnd W InThe active region can be powerful and irreversibly be attached to expose from the teeth outwards-the OH base or-other materials of Si-O base on.Use these adhesive sites that is patterned, in nanobelt, to create the good 3D geometry that limits, as hereinafter describing.Alternatively, by with this substrate contact before the similarly described interconnection of patternization, similar adhesive bond site pattern is provided.
In this embodiment, nanobelt is comprised of monocrystalline silicon and GaAs.Use previously described process (seeing the people Science 311 such as Khang, 208-212 (2006)) to prepare silicon ribbon by silicon-on-insulator (SOI) wafer.GaAs band contain by molecular beam epitaxy grow nonparasitically upon another plant (MBE) be formed at the silicon doping N-shaped GaAs (120nm of the multilayer on (100) SI-GaAs wafer; Carrier concentration 4 * 10 17Cm 3), Semi-insulating GaAs (SI-GaAs; 150nm) and AlAs (200nm).Epitaxial loayer is at H 3PO 4And H 2O 2Water-soluble etchant in chemical etching, use photoresist line along (011) crystal orientation patterning as etching mask, limit described band.Remove in the ethanolic solution (it is 2: 1 that ethanol becomes the volume ratio of HF with 49% water) that then photoresist be immersed in wafer HF, remove the AlAs layer, thereby, discharge the GaAs band (n-GaAs/Si-GaAs) with width (being～100 μ m for the embodiment shown in Figure 24 D) of being determined by photoresist.Add ethanol to HF solution, the possibility that has ruptured owing to the capillarity in dry run with regard to having reduced frangible band.Low surface tension (with the water ratio) also makes the disorder that is caused by drying in the space layout of GaAs band minimize.In final step, deposition skim SiO 2(～30nm) is so that necessary-Si-OH surface chemistry material to be provided, in order to be attached to the active region of PDMS.
SOI or the GaAs wafer processed are carried out lamination (the band orientation is parallel to the direction of prestrain) against PDMS substrate that processed through UVO, prestrain, in stove, toasted several minutes with 90 ℃, and remove wafer, all bands are transferred to PDMS surface (step I v).Heating is easy to make the natural SiO on silicon ribbon 2The layer or GaAs with the deposition SiO 2Layer and conformal contact between the active region of PDMS and form strong siloxanes be combined (also be-O-Si-O-).Weak Van der Waals for is attached to band in the inactive surface zone of PDMS relatively.Relax strain in PDMS will be by producing with the non-active region physical separation from PDMS warp (step v).In the active region, because the extensive chemical combination, band is retained as and is bound to PDMS.The 3D band geometry (also namely, the spatial variations pattern of warp) that the result forms depends on amplitude and surface-active pattern (for example, the W of prestrain InAnd W ActShape and size).(binding site of the patterning by on tape can be realized similar result).For the situation of single line pattern, W InDetermine width and the amplitude of warp with prestrain.Owing to produce the mechanical instability of that type of " wavy " silicon, work as W ActDuring＞100 μ m, in same band, also form wavelength and amplitude and (see Figure 25, with different W much smaller than the sine wave of warp ActThe sample image that forms).As the final step of above-mentioned manufacturing, the 3D band structure can be encapsulated among the PDMS by casting and curable liquid pre-polymer (sees Figure 24 step vi).Liquid flows owing to its low viscosity and low-surface-energy and is filled in the slit (seeing Figure 26) that forms between band and the substrate.
Figure 24 D is illustrated in PDMS upward scanning electron microscopy (SEM) image of the oblique viewing angle of the GaAs band of perk, wherein ε Pre=60%, and W Act=10 μ m and W In=400 μ m.This image shows homogeneous and periodic warp all have the consistent phase place of common geometry and space for bands all in the array.Anchor point is recorded to the adhesive site of photoetching restriction well.Illustration illustrates the SEM image of calmodulin binding domain CaM; Width is～10 μ m W ActUnanimously.This image shows that also even if at the binding site place, the surface of PDMS is also smooth.This behavior greatly is different from previous described close coupling wavy texture, and this shows that for situation described herein, PDMS causes displacement, but does not closely correlate to warp process (namely, its modulus does not affect the geometry of band yet).Thus, PDMS shows as soft and nondestructive instrument, is used for by the power that applies in the adhesive site band being handled.
Figure 27 A shows with different ε Pre(W Act=10 μ m and W In=190 μ m) be formed on the light microscope end view of the warp band on the PDMS.The height of warp (for example, " amplitude ") is along with ε PreAnd increase.Band in non-active region is at low ε Pre(see with ε lower and incomplete the separation Pre=11.3% and 25.5% sample that forms).For higher ε Pre, band (thickness h) separates from PDMS, so that warp is formed with the profile of vertical displacement, it is characterized in that:
y = 1 2 A 1 0 [ 1 + cos ( π L 1 x ) ]
Wherein:
A 1 0 = 4 π L 1 L 2 ( ϵ pre - h 2 π 2 12 L 1 2 )
L 1 = W in 2 * ( 1 + ϵ pre )
L 2 = L 1 + W act 2
Determine such as the nonlinear analysis to the warp that forms in the even thin layer.The maximum tension strain of band is approximately
ϵ peak = κ | max h 2 = y n | max h 2 = h 4 A 1 0 ( π L 1 ) 2
The width of warp is 2L 1And the cycle is 2L 2Because for h＜1 μ m h 2π 2/ (12L 1 2) much smaller than ε Pre(namely, in report＞10%) be not so this amplitude relies on the mechanical property (for example, thickness, chemical composition, Young's modulus, etc.) of band and mainly determined by layout and the prestrain in adhesive site yet.This conclusion shows the general applicability of this approach: the band by any material manufacturing all forms similar warp geometry.This prediction is consistent in the result of this used Si and the acquisition of GaAs band with employing.The profile that calculates, in Figure 27 A with dotted lines, for be 33.7% and 56.0% prestrain, this profile conforms to well with observed result in the GaAs band.In addition, hang down ε in the parameter (comprising cycle, width and amplitude) of the warp shown in Figure 27 A except being in PreOutside consistent with analysis result (table 1 and 2).This studies interested result and is, even if for larger ε Pre(for example 56.0%), maximum tension strain still less (for example～1.2%) in the band.This scaling allows tensility, and is even if also be so for the friable material such as GaAs, as mentioned below.
The adhesive site that lithographic printing limits on geometry can than with Figure 24 in simple fence or the comb mesh pattern of structurally associated connection more complicated.For example, the warp that has different in width and an amplitude can form in independent band.As an example, Figure 27 B illustrates, and the SEM image of warp silicon ribbon (width and thickness are respectively 50 μ m and 290nm) is formed with 50% prestrain and is characterized as W Act=15 μ m and be W along strip length InThe adhesive site of=350,300,250,250,300 and 350 μ m.Be illustrated in to this clear picture the width of the adjacent warp in each band and the variation of amplitude.For different bands, the warp band also can be formed with out of phase.Figure 27 C illustrates the embodiment of system on silicon, and it is designed to phase place in warp along with the linear change perpendicular to the distance of strip length.The UVO mask that is used for this sample has the W of 15 μ m ActW with 250 μ m InIt is 30 ° at the active striped on the PDMS die and the angle between the silicon ribbon.Because it is comparatively simple that lithographic printing control is carried out in the adhesive site, thus can easily realize other multiple possibilities, and some possibilities for example are presented among Figure 13-17.
The simple scenario of the upper warp GaAs band of the PDMS shown in Figure 27 D--ε wherein Pre=60%, W Act=10 μ m and W InDifferent--the one side of overstating and wanting for the application of the electronic device that can stretch is shown.Described profile conforms to well with analytical plan for machinery, demonstrates and works as W InDuring=100 μ m (and less) owing to the fracture among the GaAs is broken down.This fault cause is the elongation strain that surpasses GaAs yield point (～2%) (be～2.5%) in this case.Therefore, the structure of optimizing for the robustness that stretches and compress can be by selecting and ε PreProportional W InThe W of (＞＞ Act) and realize.In the case, can regulate prestrain up to and greater than 100%.We are by applying power and directly verify this type of tensility to the PDMS support.End-to-end distance (the L of band portion Projected) change, a kind of mode that tensility and compressibility are quantized is provided, according to:
| L projected max - L projected 0 L projected 0 | * 100 %
L wherein Projected MaxMaximum/minimum length before the expression fracture, and L Projected 0Be the length under the relaxed state.Stretching and compression correspond respectively to L Projected 0Compare L Projected 0Larger and less amount.Warp band on PDMS, wherein W Act=10 μ m and W In=400 μ m and ε Pre=60%, show 60% tensility (also namely, ε Pre) and up to 30% compressibility.To be with to embed PDMS, and just structure be carried out mechanical protection, and produce continuous and reversible response, but change small in mechanical structure.Particularly, tensility and compressibility drop to respectively～51.4% (Figure 28 A) and～18.7% (Figure 28 B).PDMS matrix on the top of band partly brings out the contraction of upper strata PDMS so that the peak of warp flattens slightly because of curing.These be in larger compression strain the zone in formation the minor cycle ripple, reason is the spontaneous mechanism of the wavy band structure of generation of type as discussed previously.Mechanical breakdown often starts from these zones, shown in Figure 28 B, thereby reduces compressibility.Has W Act=10 μ m and W InThe warp structure of=300 μ m has been avoided this class behavior.Although this type of embodiment shows with the embodiment shown in Figure 28 A and compares slightly lower tensility and since do not exist short-period wave, compressibility be added to～26%.On the whole, be formed at the monocrystalline GaAs nanobelt with warp in the surface chemistry adhesive site with patterning on the PDMS substrate of prestrain, show and be higher than 50% tensility and greater than 25% compressibility, corresponding near 100% the full reduced range of strain of putting.By increasing ε PreAnd W In, and by the backing material that use can be higher than PDMS elongation, can further improve these numerals.For in addition meticulousr system, can repeat these manufacture processes, have the sample (seeing Figure 29) of multilayer warp band with generation.
This larger draftability/constrictive direct result is and mechanical flexible highly.Figure 30 A-C shows the optical microscope image of the warp architecture of describing this feature.(thickness～4mm) is curved respectively concave surface (radius～5.7mm), plane and the convex surface (curvature of radius～6.1mm) to the PDMS substrate.These images illustrate profile how to change to adapt to the crooked surface strain that causes (for these situations for～20-25%).In fact, these shapes are similar to the shape that obtains in compression (～20%) and stretch (～20%).Embedded system shows owing to neutral mechanical planarization effect even the flexible of higher degree.When the PDMS top layer had similar thickness with bottom, the warp shape was during bending and unchanged (Figure 30 D).
In order to confirm these mechanical attributes in functional electronics device, we use the warp GaAs band that has to similar profile shown in Figure 30, SI-GaAs side by thin gold electrode being deposited to band has just made up MSM-PD with low (MSM-PD) to form Schottky contacts.Figure 31 A is illustrated in before stretching～50% and geometry and equivalent electric circuit and the vertical view optical photograph of MSM PD afterwards.Do not having in the situation of light, almost do not having electric current to flow through PD; Electric current is along with (the enhancing of～850nm) irradiation and strengthen (Figure 31 B) of infrared ray wave beam.Asymmetry in current/voltage (I-V) characteristic can be attributed to the difference of the electrical characteristics of contact.Figure 31 C (stretching) and Figure 31 D (compression) are illustrated in stretching and the lower current-voltage curve that records of compression in various degree.Electric current increases up to 44.4% the time when PD is stretched, and then reduces along with further stretching.Because light source is constant in the intensity of per unit area, electric current can (be called the effective coverage, S owing to the projected area that warp GaAs band is opened along with it is open and flat with the increase that stretches Eff) increase.Further stretching PD can cause from the teeth outwards and/or form defective in the lattice of GaAs band, causes current reduction, finally causes open circuit when fracture.Similarly, compression reduces S EffAnd therefore reduce electric current (Figure 31 D).These results show, the warp GaAs band that embeds in the PDMS matrix provides the optical sensor that can be used for can the stretching fully of various different application/compressible type, such as wearable monitor, curved planar reformation array and other devices.
Generally speaking, this embodiment shows to have the mollielast that lithographic printing limits the adhesive site, can be used as the instrument that creates the 3D structure of particular category in semiconductor nano-strip.The electronic device that can stretch provides an embodiment for many possibility applications of these structure types.Simple PD device has proved ability to a certain extent.To the control of the height of structure, and with high temperature processing step (for example, the formation of ohmic contact) from the ability that warp process and PDMS divide out, show and can make more complicated device (for example, transistor and little circuit wafer).The phase place of the well-controlled of the warp in the phase adjacent band provides chance for being electrically connected a plurality of elements.Equally, although GaAs and Si nanobelt are used in the test of report herein, yet other materials (for example, GaN, InP, and other semiconductors) and other structures (for example, nano wire, nanometer film) also are compatible with this approach.
The manufacturing of GaAs band: have the GaAs wafer of customization epitaxial loayer (describing in detail in the literary composition) available from IQE Inc., Bethlehem, PA.Photolithography and wet chemical etch produce the GaAs band.AZ photoresist (for example, AZ 5214) reaches 30 seconds with the speed rotational casting of 5000rpm on the GaAs wafer, then 100 ℃ of soft bakings 1 minute.Expose by the mask with the patterned lines that is orientated along (011) crystallographic direction of GaAs, develop subsequently and in photoresist, produce line pattern.Gentle O 2Plasma (also namely, descum process) is removed remaining photoresist.Then by etching anisotropically 1 minute, etchant was as follows: 4mL H in following etchant for the GaAs wafer 3PO 4(85% weight), 52mL H 2O 2(30% weight), and 48mL deionized water are cooled off in ice-water bath.The HF solution of AlAs layer employing dilution (volume ratio 1: 2) in ethanol (
Figure G2007800411276D00431
Chemicals) dissolving.On the parent crystal sheet, with the sample of Relaxation Zone, in fume hood, be dried.The coated 30nm SiO to deposit by electron beam evaporation of the sample that is dried 2
The manufacturing of silicon ribbon: silicon ribbon is made by silicon-on-insulator (SOI) wafer (Soitect, Inc., top silicon 290nm, buried oxide 400nm, p-type).This wafer uses AZ 5214 photoresists to be patterned by traditional photoetching technique, then adopts SF6 plasma (PlasmaTherm RIE, SF640sccm, 50mTorr, 100W) etching.When photoresist with after the acetone flush away, then etching buried oxide layer in HF (49%).
The manufacturing of UVO mask: the vitreous silica slide block cleans 15 minutes in Piranha washing lotion (at 60 ℃), and adopts the complete rinsing of enough water clean.The slide block that has cleaned is dry by nitrogen blowing, and is placed on the indoor of electron-beam evaporator, with by sequential applications 5-nm titanium (as adhesive phase) and 100-nm golden (for the mask layer of ultraviolet light).Negative photoresist, also, SU85 reaches 30 seconds with 3000rpm rotating speed rotational casting on slide block, to form the thick film of～5 μ m.Soft baking is exposed to ultraviolet ray, rear baking, and the pattern that produces developed in photoresist.Gentle O 2Plasma (also namely, descum process) is removed remaining photoresist.Photoresist is as mask, to use respectively golden etchant (also namely, I 2The aqueous solution with KI) and titanium etchant (also namely, dilution HCl solution) come etching Au and Ti.
The preparation of PDMS die: thickness is～the PDMS substrate of 4mm prepares by following process,, prepolymer (A: B=1: 10, Sylgard 184, Dow Corning) poured into petri diss, subsequently 65 ℃ of lower bakings 4 hours that is.Flaggy with appropriate size and rectangular shape downcuts from formed cured sheets, then uses isopropyl alcohol, dries up with nitrogen.Adopt the custom-designed stage with the degree of strain of PDMS mechanical stretching to expectation.With short UV light (low pressure mercury lamp, BHK, 173 μ W/cm 2From 240 to 260nm) pass and be placed as with the contacted UVO mask of PDMS and to the base light of these stretchings 5 minutes, produce the surface chemistry material of patterning.
Formation and the embedding of warp GaAs band: have coated with SiO 2The GaAs wafer of Relaxation Zone, utilize the patterned surface chemical process by against the PDMS that stretches and lamination.With 90 ℃ of bakings 5 minutes, with room temperature cooling, the strain in PDMS of then relaxing lentamente produced warp along each band in air in stove.Embed the warp band, the mighty torrent (flood) of introducing is exposed to ultraviolet light reaches 5 minutes, then liquid PDMS prepolymer is cast as～thickness of 4mm.Perhaps in stove, solidified this sample 4 hours with 65 ℃, perhaps at room temperature solidify this sample and reach 36 hours, just make this prepolymer obtain solidifying, to stay the warp band in the solid matrix that embeds PDMS.
The characteristic description of warp band: by with sample inclination～90 ° (for non-embedded sample) or～30 ° (for Embedded sample), adopt light microscope to described band imaging.Coated (thickness～5nm) afterwards, the SEM recording image is on Philips XL30 field emission scanning electron microscope with skim gold at this sample.The same step that is used for pre-stretching PDMS die is used to stretch and compress resulting sample.
The manufacturing of the manufacturing of SMS PD and characteristic description: PD starts from the sample in the structure shown in the end picture of Figure 24 B.PETG (PET) sheet～the wide bar (strip) of 0.8mm gently placed on the PDMS, and the longitudinal axis of this PDMS is perpendicular to each longitudinal axis of described band.This shadowmask as the electron beam evaporation of the thick golden film of 30nm (to form the Schottky electrode).Remove the PDMS die of PET bar and lax prestrain, form the SMS PD that is built with warp GaAs band.Liquid PDMS prepolymer be cast into on do not have the zone of electrode, then in stove, solidify.Gold electrode extends beyond PDMS, surveys can adopt analyzing parameters of semiconductor device (Agilent 4155C).In the measurement of photoelectric sensitivity, with stretching and the mechanical stage of compression is handled PD.IR LED source (wavelength 850nm) provide illumination.
Embodiment 2: transfer printing
Our technological approaches has used foregoing some design to implement based on the printing process of flat stamp.Although these basic fundamentals provide optimistic cutting point, must introduce the new function on many bases to cater to the challenge of HARDI (imaging of hemisphere detector array) system, as mentioned below.
Figure 32 and 33 illustrate with to the relevant common strategy of the transfer printing of curved surface.First group of step (Figure 32) relates to the elastomeric stamp of making and control thin and curved surface spherical in shape, this die be designed to will interconnection Si CMOS " microchip " float off from the flat surfaces of wafer, then convert this geometry to hemisphere.By casting and curable liquid pre-polymer with facing to the high quality optical element of as requested radius of curvature selection (namely, convex lens and the concavees lens of coupling) obtain the elastomer such as dimethyl silicone polymer (PDMS), and be formed for the die elastomer of said process.This die has molded wheel rim.By the molded indentation (illustrating with dashed circle in Figure 32) on this wheel rim is matched with the rigidity of appropriate size, circular maintenance ring, this element of radial drawing just is deformed into this spherical die the plane lamina of stretching.Die that this has been stretched adopts thin connecting to contact the parent crystal sheet that supports preformed and undercutting etching Si CMOS " microchip ", then die is peeled off the element with " microchip " of these interconnection of " ink-jet ".Van der Waals reciprocation between microchip and mollielast element for this reason process provides enough bonding forces.
The maintenance ring is removed, got back to its initial semi-spherical shape so that PDMS is lax, thereby finish the distortion of microchip array from the plane to the sphere.This distortion causes the compression strain at the stamp surfaces place.By the local leafing of interconnection and upwards lifting (Figure 32 lower-left), these strains are accommodated among the CMOS microchip array.These " projections " interconnection absorbs strain, thereby avoids microchip is caused damage or its electrical characteristics caused the harmful change that is caused by strain.Strain in microchip keeps below～and 0.1%, just realized this two targets.The maximum fill factor of required spatial limitation CMOS microchip interconnects.Yet described photodetector occupies almost whole pixel region, thereby the direct way of reaching 80% fill factor target is provided.
In second group of step (Figure 33), " ink-jet " hemisphere die is used for these elements are transferred on the resulting devices substrate (for example, in this embodiment for having the glass substrate of coupling hemi-spherical cavities) with matched shape cavity.This transfer process is used ultraviolet ray (UV) curable photosensitive polymer, such as light curable BCB (Dow Chemical) or polyurethane (NorlandOptical Adhesive) as adhesive.These materials are applied to device substrate with the form of (tens of micron thickness) fluid film.In case contact the mobile relief fabric to be suitable for being associated with microchip and bump interconnection of liquid level with this die.Pass the UV light of transparent substrates, solidify photosensitive polymer, and convert it into solid form, thereby in case remove the top surface that die just produces level and smooth and complanation.For forming the finally integrated of function system, relate to deposition and patterning to electrode and photodetector material, and the lithographic printing to the bus of external control circuit is limited.
The approach of Figure 32 and Figure 33 has several noticeable features.At first, it adopts state-of-the-art plane electronics technology, carrying out reliable and economical and high performance operation at the hemisphere substrate.Particularly, microchip is included in the silicon transistor of processing under 0.13 micron design rule, to produce the Pixel-level disposal ability for this locality of HARDI system.Traditional technique forms these devices with Silicon-On-Insulator wafer.Buried oxide provides sacrifice layer (adopting HF to carry out the undercutting etching) with the microchip for the preparation of printing.(～100nm) metal wire forms by narrow and thin in interconnection.
Second Characteristic is, this approach uses elastomer element and Machine Design, with can well-controlled ground from the plane deformation to hemisphere.Reversibly, the linear mechanism in transfer printing die and comprehensive mechanical model realizes this control, and is as mentioned below.The 3rd concerned aspect is that transfer process and the specific basic module of controlling bonding strategy are showed in planar applications.In fact, use the step that designs for those planographics, applicable to the process of Figure 32 and 33.Figure 34 illustrates a kind of household printer, and it has integrated vision system and the pneumatic actuator that uses in this process of being adapted at.
The printer system of these types is used for some aspects of the process of confirmation Figure 32 and 33.Figure 35 illustrates a kind of scanning electron image of surface of hemisphere die, and described hemisphere die adopts the monocrystalline silicon island array of the silicon ribbon interconnection of mixing with severe in quadrate array to carry out " ink-jet ".Figure 36 illustrates optical imagery.During the spherical deformation, these banded interconnection are with mode projection shown in Figure 32 on the plane.The critical aspects of the interconnection of these types is, when combination with to the transfer printing of the microchip of global formation the time, their reduce the high-resolution curved surface plane photoetching of directly processing at hemisphere face or the demand of other form.
Except material and common process strategy, also carry out to hemisphere die, bump interconnection, with the complete computation modeling of the interactive elastic mechanical response on rigid device island.These physical characteristics of calculating this process of announcement are in the degree that promotes Engineering Control and optimization.Simple estimation based on the linear elasticity plate theory shows, for the thick die of 2mm and the ball of 1cm radius, the level of strain relevant with the process of Figure 32 can reach 10% or higher.Therefore, in order to carry out reliably Engineering Control, be necessary this mask is moved in linear elastic region, so that strain reaches the twice of this value, namely～20%.Figure 37 illustrates the experimental stress/strain curves of several variablees of PDMS, and we adopt this curve to be practiced in degree based on the printing of integral body and flat stamp.184-PDMS is intended to the original material that provides good, and because it provides highly linear and elastic response, strain is up to～40%.
Such as these machinery tolerance, in conjunction with the document record value of modulus, the geometry of microchip and the interconnection of band projection, just provide modeling necessary information.Adopt two kinds of computed paths.The first is comprehensive finite element modeling (FEM), wherein analyzes device details and interconnect geometry (for example, size, interval, multilayer) on planar substrate.Different material (for example, die, silicon, interconnection) to be directly brought into analysis.Apply transverse pressure die and circuit are deformed into the spherical form of expectation.Finite element analysis provides stress distribution, the particularly maximum strain in device and interconnection, and at the heterogeneity interval between the deformable means.The benefit of this approach is, all details of its acquisition device geometry and material, therefore and can be used to probe into the effect of the different designs of transfer process, in order to reduce maximum strain and inhomogeneity.Yet the method computation-intensive and therefore consuming time, reason are that it relates to a large amount of length number ranges and to the modeling of a large amount of structure devices on the die.
The second approach is the structure cell model for device (microchip), and this model is in case load the mechanical performance of just analyzing each device.Each device is expressed as a structure cell, and it is to response comprehensively research by Finite Element Method of mechanical load (for example, bending and tension force).Then, each device all is replaced by the structure cell that links by interconnection.Then include this structure cell model in finite element analysis, to substitute the detailed modeling to device and interconnection.In addition, away from sphere edge, strain facies is to homogeneous, thereby can carry out many structure cells integratedly, and their performance can represent with the degree of roughness model.Near the sphere edge, answer the And of Varying Depth heterogeneity, therefore the detailed modeling of device still is necessary.The advantage of this approach is, significantly reduces amount of calculation.Comprehensive finite element analysis in the first approach is used for verifying this structure cell model.In case by checking, this structure cell model just provides a kind of powerful design tool, because it is suitable for detecting fast device, interconnection, and the different designs of its spacing.
Figure 38 has shown preliminary FEM result, for the hemisphere die being drawn into plane geometric shape (and it is lax and get back to hemisphere), describes such as Figure 32.Upper picture illustrates the cross-sectional view of hemisphere die, and it has the geometry that is similar at the die shown in Figure 32.These results are presented at the slight space inhomogeneity in the strain of the film that is stretched, and prove such as its heterogeneity thickness.Cast and be solidified to form the suitably selection of structure do that die faces toward by serving as reasons, design the die thickness profile, can eliminate these inhomogeneities.Yet what emphasis was noted is, some inhomogenous strain can be accepted, because (i) bump interconnection is tolerated distortion inherently, and (ii) microchip and needn't ideally occupy the center of each location of pixels; Larger photodetector will be filled back electrode with homogeneous for pixel region, and it can create with microchip and electrically contact, and with the location independent of microchip in pixel region.
This modeling also can be determined the degree of strain in Si CMOS microchip.This system should be designed to, keep these microchip strains be lower than～0.1-0.2% to be to avoid changing electrical characteristics and possibly because fracture or leafing cause mechanical breakdown.This modeling is easy to die and treatment conditions are designed to, and avoids microchip is exposed to the strain that is higher than this scope.
Embodiment 3: twin shaft " wavy " silicon nanometer film that can stretch
This embodiment introduces can the stretch monocrystalline silicon of form of a kind of twin shaft, and two dimension warps that it is supported by elastomer or the silicon nanometer film of " wavy " form.Manufacture process for these structures has been described, and represented its on various different directions geometry and to each different aspect of the response of single shaft and biaxial strain.The analytical model of the mechanism of these systems is provided for quantitatively understanding the framework of their behaviors.The material of these types provides the approach for the high-performance electronic device with complete two-dimentional tensility.
The electronic device that presents mechanical flexible, concerned application in information display, x-ray imaging, photoelectric device and other system.Reversible tensility is a kind of different but have the mechanical property of technological challenge therewith, and it will allow the device realization with the only irrealizable function of flexible electronic device, for example intelligent surgical glove, electric eye video camera and personal health monitor.In a kind of approach of this type of electronic device, but draw line provides the tensility of circuit grade with the interconnection of rigid device island for non-stretchable apparatus assembly.In substituting strategy, the ad hoc structure form of thin single crystal semiconductor and other electronic materials allows these devices self to have tensility.Nearest example relates to that (thickness is between tens of and hundreds of nanometers at silicon and GaAs nanobelt, width is in micrometer range) middle " wavy " geometry of using warp, one dimension, to be implemented in the single shaft tensility in mos field effect transistor (MOSFET), metal-semiconductor field effect transistor (MESFET), PN junction diode and the Schottky diode.This embodiment shows that the nanometer film of similar material can form the wavy geometry of two dimension (2D), so that complete 2D tensility to be provided.The manufacture process that is used for this type systematic has been described, and detailed assay features and the analysis modeling of this type of system mechanics response.
But Figure 39 schematically shows for support the step that forms two dimension tensile silicon nanometer film at elastomer.For this example, these films are by silicon-on-insulator (SOI) wafer (Soitec.Inc, p-type) makes, at first by limited the photoresist pattern that is fit to by photoetching process, in the silicon of top, form the square array (～2.5 μ m diameters ,～25 μ m spacings) in hole, then by reactive ion etching (PlasmaTherm RIE, SF640sccm, 50mTorr, 100W) remove the silicon of exposure.Same step limits total lateral dimension of film, and for sample described herein, described total lateral dimension is in the scope of 3-5 square millimeter.Thickness is between 55nm and 320nm.Etched sample is immersed in the concentrated hydrofluoric acid (HF 49%), has just removed the SiO that buries 2Layer (145～1000nm is thick); In acetone, wash, just removed photoresist.Near the silicon wafer casting of polishing and the prepolymer of curing dimethyl silicone polymer (PDMS), generate smooth elastomeric substrate (～4mm is thick).In the ozone environment that is created by intensive ultraviolet (240-260nm), expose 5 minutes, just with hydrophobic PDMS surface (CH 3With-H end group) change into hydrophily (OH and-O-Si-O end group).Mainly under about 70-180 ℃, in convection furnace, heat this type of active PDMS substrate, so that isotropism thermal expansion degree is controlled.This element is contacted with the SOI wafer of processing, then it is peeled off again, just whole nanometer film is transferred to PDMS.Continuous heating number minute in convection furnace just is easy to form strong adhesive bond between film and PDMS.In final step, nanometer film/PDMS structure is cooled to room temperature (about 25 ℃), with the prestrain (Δ L/L) of releasing heat initiation.This process cause the silicon nanometer film and near the surf zone of PDMS in spontaneous formation two dimension (2D) undulation structure.These structures represent different behaviors at diverse location, and the One Dimension Periodic ripple accounts for leadingly near the edge, can typically observe two-dimentional fishbone layout at the interior zone place, and unordered fishbone structure often occurs near the center.The fish-bone zone is characterised in that: the peak-to-peak distance of adjacent wave--we are referred to as short wavelength λ, wave amplitude A in ripple 1(not shown in figure 1) and long distance 2 π/k 2(along the x2 direction), its with adjacent in the fishbone structure " turn (jog) " between separate and be associated, we are called the long wavelength.Other characteristic lengths are " turning " wavelength 2 π/k 1(along x 1Direction is with long wavelength's direction x 2The amplitude A of quadrature), turning 2, turning angle θ.The bottom field of Figure 39 schematically shows these characteristics.
The each several part a-f of Figure 40 illustrates the different phase collected light micrograph of situation during forming the fish-bone ripple for following nanometer film, and described nanometer film thickness is the 100nm (about 4 * 4mm of lateral dimensions 2) and hot prestrain (limiting by being heated to 150 ℃ of institutes) be～3.8%.These images show that the structure in two stages forms, the one-dimensional wave of phase I in being chiefly directed on a large scale wherein, subsequently with these wave structure bendings finally when cooling off fully, to form compact fishbone layout (seeing Figure 40 d-f).Figure 40 h illustrates the time-evolution of two kinds of characteristic wavelengths.Increase gradually along with cooling causes the compression strain on silicon, the short wavelength tends to reduce, and this is because PDMS has relatively large thermal contraction.Particularly, this value from the 17-18 μ m of initialization phase drop to the fishbone structure in becoming significantly～14.7 μ m, finally drop under the complete state of cooling～12.7 μ m.This wavelength is homogeneous (～5% change) in large tracts of land.In contrast, the long wavelength who is associated with the fishbone layout shows the value of wide region, easily sees such as the image of Figure 40 g.Measurement at about 100 the some places that travel through this sample is created in the value of summarizing in the block diagram of Figure 40 g and distributes.The fishbone structure can be expressed as plane outer displacement w=A 1Cos[k 1x 1+ k 1A 2Cos (k 2x 2)] (Figure 49).By for the mechanical property of film thickness, film and the analysis of substrate, determine following coefficient at this, that is, and wave amplitude A 1, long wavelength 2 π/k 2, turning wavelength 2 π/k 1, and turning amplitude A 2Short wavelength λ is (2 π/k 1) sin (θ/2).As from wavy texture record profile length and the cycle determined, this model substitutes hot prestrain (Figure 50) with the Si strain as the prestrain that applies.The actual strain that Si is out of shape is slightly less than the hot prestrain of estimation usually, and possible cause is the loading effect of Si on PDMS.For example, under 3.8% hot prestrain, the silicon strain is 2.4%.For such displacement w, the stress in the Si film, strain and displacement field all can be by the Feng Kamen flat-plate theory according to A 1, k 1, A 2And k 2Obtain.Field in the PDMS substrate is obtained by the 3D elastic theory.Minimize gross energy, it is comprised of the elastic energy in the film energy in the silicon fiml and flexional and the PDMS substrate, provides A 1, k 1, A 2And k 2The Young's modulus of Si and PDMS and Poisson's ratio are E Si=130GPa, v Si=0.27, E PDMS=1.8MPa, and v PDMS=0.5.The turning angle θ of test and model is about 90 °.Under 2.4% 2 axle prestrain, the short wavelength who is provided by theory is 12.4 μ m, and this notional result meets above-mentioned result of the test well.At long wavelength 2 π/k 2In larger change also calculated by theory and dope, from 30 μ m to 60 μ m.
Figure 41 illustrate with Figure 40 under the complete state of cooling shown in similarly atomic force microscope (AFM) and scanning electron microscopy (SEM) image of structure.Illustrate to these clear picture, fish-bone pattern is characterised in that the zigzag structure that limits two characteristic directions, even the compression strain completely isotropic also is like this.This fishbone structure represents minimal elastic energy structure, and it reduces the general plane internal stress in the system, and alleviates the Biaxial Compression on the both direction.Therefore, compare with 1D ripple layout with " chessboard ", this geometry is preferred in large tracts of land, because the herring-bone form pattern is uniquely in these three kinds of patterns a kind ofly all relax plane stress and the pattern of the energy that do not cause significantly stretching in all directions.Only near the turning part, just cause significant the stretching.The 1D pattern only reduces prestress in one direction.Checker board pattern reduces stress in all directions, but it is accompanied by the crooked significant stretching energy that produces.
Two line blocks (linecut) of extracting from afm image are although only shown near sinusoid but be periodically along the fluctuating profile (profile i) of turn direction with perpendicular to the fluctuating profile (profile ii) of ripple.λ and A by the determined ripple of profile ii 1, be respectively 12.8 μ m and 0.66 μ m.The λ that theory analysis provides is 12.4 μ m, and is similar to experimental data; Yet, the A of theory analysis gained 10.90 μ m, on the numerical value a little more than experimental data.The SEM clear picture is illustrated in combining closely between film and the PDMS, proves such as the projection of ripple and near the behavior of the sample the aperture among the silicon in the recessed region.These images also show, these wave structures are fully uncorrelated with the position in these holes, because the characteristic wavelength of the deformation pattern of hole dimension 2.5 μ m in testing much smaller than us.The geometry of wave structure can provide the other understanding to physical characteristic to the dependent research of silicon thickness, and further verifies mechanical model.Figure 42 illustrates some results, comprises the formed wave structure in the film of different-thickness of light micrograph, wavelength and amplitude have to(for) similar thermal strain.For 100nm thickness, the λ of ripple and A 1Be respectively 12.6 (± 0.37) μ m and 0.64 (± 0.07) μ m, and for 320nm thickness, they are respectively 45.1 (± 1.06) μ m and 1.95 (± 0.18) μ m.These values are reasonably good corresponding with calculated value, and calculated value is λ and A for the 100nm situation 1Be respectively 12.4 μ m and 0.90 μ m, and for 320nm situation λ and A 1Be respectively 45.1 μ m and 3.29 μ m.
These ruffled membranes, the strain on the direction provides accurately tensility in the various plane in order to be in, and is different from the one dimension tensility that previously described banded geometry provides.In order to study in this respect, we use the mechanical stage of calibration, but and the 2D stretched film of bringing out prestrain 3.8% preparation with heat, along different directions fill order elongate axis extension test.Figure 43 provides some images.In case i, along the elongation strain (ε of long wave direction St) cause fishbone structure " expansion " (ε St) 1.8%, cause gradually at complete extended state (ε St) the wavy geometry of 1D under 3.8%.This stretching is by the compression strain of poisson effect initiation at orthogonal direction, and its amplitude is substantially equal to half of elongation strain.This compression strain can be by to regulating in the compression of the wavy texture that this side up.In case discharge the elongation strain that applies, initial fish-bone ripple namely is resumed, to show and initial closely similar structure (Figure 51 shows the light micrograph of collecting after 5,10 and 15 circulations that stretch).
Elongation strain (case ii) in that diagonal applies illustrates similar structural change, although the 1D wave structure is along by applying strain but not the direction that initial geometry limits alignment when stretching fully.For vertical case iii, at small strain ε St1.8% time, some part of sample loses the fishbone layout fully, to produce new 1D ripple along draw direction.Along with strain increases, more multizone stands this distortion, until whole zone is all by the 1D wave component of these guiding.The 1D ripple of these new formation is perpendicular to the orientation of original ripple; In case discharge, they are crooked to form unordered herring-bone form geometry simply.For all situations shown in Figure 43 B, wavelength increases along with elongation strain, then just is returned to its initial value in case relax, even it is also like this to introduce compression stress by poisson effect at orthogonal direction.This behavior be because of, by the λ recruitment that the expansion to the fish-bone ripple causes, this recruitment is greater than the decrease of this wavelength that is caused by poisson effect.(Figure 52) for case i, since poisson effect, the elongation strain ε that is applying StLower, 2 π/k 1(Figure 52 A) reduces to 2 π/k ' 1(Figure 52 B) that is to say k ' 1＞k 1Yet owing to the expansion to the fishbone structure, corresponding turning angle θ ' is greater than angle θ.Short wavelength λ=(2 π/k 1) sin (θ/2) becomes λ '=(2 π/k ' 1) sin (θ '/2), it can be greater than λ when the angle varying effect overcomes poisson effect.Our theoretical model provides, for ε StIn the time of=0,1.8 and 3.8%, λ=12.4,14.6 and 17.2 μ m, it confirms that the short wavelength increases along with applying of strain, as viewed in the test.For case iii, λ and 2 π/k 1All increase along with the elongation strain that applies, because ripple is lax along the direction of elongation strain, and turning angle (θ) is not significantly changed by poisson effect.Also bring out the twin shaft tensility (Figure 53) that the warp film is studied in elongation strain by heat.Along with sample is heated, the fish-bone ripple that is produced by thermal strain slowly disappears; In case cooling, they recover fully.
These observed results are only applicable to the central area of film.Shown in Figure 39 bottom diagram picture, the edge of film illustrates the one-dimensional wave structure, and it has the wave vector along edge orientation.Shown in Figure 44, the afm image of border district, Central District and the transitional region between them and line block profile.Near the 1D ripple that originates from the Si edge (upper figure) limpens in (middle figure) gradually, until they are converted to the fish-bone geometry (figure below) at middle section.λ value in these zones is respectively 16.6,13.7 and 12.7 μ m (from top graph), and A 1Be respectively 0.52,0.55 and 0.67 μ m.Compare with the 1D ripple of edge, 2D fish-bone ripple has less λ and A 1, the interior zone that shows Si is compared with the edge to be compressed and should be changed strong impact.Near the edge stress state generally is uniaxial compression in some distance range, because the edge of film is not subjected to tractive effort.This uniaxial compression is parallel to this free margins, and therefore causes the 1D ripple along the edge.Yet stress state in the middle section that causes the fishbone structure, the Biaxial Compression such as becomes.For the transitional region between 1D waviness and fish-bone ripple, unbalanced Biaxial Compression causes having " partly "-fish-bone ripple of larger turning angle.λ and A that our model produces for the 1D ripple 1Being respectively 16.9 and 0.83 μ m, then is 12.4 and 0.90 μ m for the fishbone structure.These results reasonably well conform to the experimental observation result.
For further these edge effects of research, we make rectangular membrane, and its length is 1000 μ m, and width is respectively 100,200,500 and 1000 μ m, all on same PDMS substrate.Figure 45 illustrates these structures for the light micrograph of the hot prestrain of two different brackets.Low-heat prestrain (about 2.3%, Figure 45 A), 100 and 200 microns wide film shows from one side to the perfect 1D ripple of another side, and is smooth and undeformed zone in the end.The wide film of 500 μ m illustrates similar 1D ripple and flat site, but these ripples have the geometry of slight bending in the central authorities of structure, and the situation that the overall order on orientation and uniformity are less than 100 μ m and 200 μ m substantially.For the zone of 1000 μ m * 1000 μ m, the 1D ripple appears at the middle section at edge, and is flat site in the bight.The middle body of film illustrates the fish-bone geometry of developing fully.For the bight flat site, because two free margins, so present approximate unstress state.Near this type of corner, there is not ripple to form.Along with prestrain increases (4.8%, Figure 45 B), the flat site in all cases reduces dimensionally.The wavy behavior of 1D continues in 100 and 200 μ m band, but clear and definite fish-bone form occurs at the middle section of 500 μ m situations.Under higher prestrain, be present in etc. biaxial compressive strain in the interior zone of the wide film of 500 μ m.For 1000 μ m * 1000 μ m films, the fish-bone behavior extends to and connects antermarginal zone.Limit the characteristic length number range of the spatial dimension of flat site, we are called edge effect length, L Edge, the function that can be used as film size and prestrain carries out valuation.Figure 45 C illustrates, for the case of investigation herein, with the irrelevant mode of film size, this length with prestrain is carried out the result of linear scale convergent-divergent.Along with prestrain becomes higher, the length in uniaxial strain zone becomes less.Therefore, near the unstressed zone two free edges, can observe the 1D waveshape of shorter scope and similar behavior.
Figure 46 illustrates the light micrograph of the wavy texture that forms other film geometries, and these shapes comprise circle, ellipse, hexagon and triangle.These results and band in Figure 45 and square in observed result quantitatively consistent.Specifically, fringe region illustrates the 1D ripple, and it is parallel to the edge and is orientated.Orthogonally oriented ripple only at the distance Edge Distance greater than L EdgeIn time, just occur.For circle, one-dimensional wave occurs near the edge, owing to the film shape has totally radial oriented.The ripple of fishbone occurs in central authorities.Ellipse shows similar behavior, but has flat site at the major axis edge, because these regional radius of curvature are less.For hexagon and leg-of-mutton shape, sharp-pointed corner (being respectively 120 ° and 60 °) causes smooth zone.The fish-bone geometry appears at hexagon central authorities.For prestrain degree shown here, triangle central authorities show the 1D ripple.For the shape with clear turning (for example, hexagon, triangle and oval tip), near the turning, there is not ripple, because the free edge of two intersections (needing not to be vertical) provides unstress state.For triangle, there are not enough spaces to produce the fishbone structure, even if at middle section.
The approach that film self provides the realization twin shaft can stretch electronic device.The edge effect of above describing may be utilized to realize some result, and it perhaps can be used for the device of some type.Particularly, in imaging system, valuablely be to keep smooth, deformed region not in the position of photodetector, with the undesirable behavior of avoiding when these devices have contoured, occurring.But Figure 47 illustrates some representative instances of the stretched film that reaches this result.These structures are comprised of the square island of 100 * 100 μ m that is connected by 30 μ m * 150 μ m band (be 30 μ m * 210 μ m for perpendicular band), connect in the horizontal and vertical directions (Figure 47 A, C), with vertical, the level and diagonal connection (Figure 47 E, G) of being connected.The wavelength of the ripple in the band and the change of amplitude, the mode that provides a kind of adjusting to apply strain, thus avoid to a great extent distortion in zone, square island.We apply the behavior that checks these structures under the strain in several differences.The part a of Figure 47 and e are illustrated in the typical case under low strain (about 2.3%) pattern, and this contingency model applies by heated sample in stove.The part c of Figure 47 and g are illustrated in the same structure under relative high two axial strains (about 15%), and this strain uses machinery stage to apply.Obviously, in low contingency model, the island remains smooth; Under sufficiently high strain, in these zones, begin to form wave structure.Under all strains, all keep between PDMS and the Si good bonding, shown in inclination angle SEM image (Figure 47 B, D, F, H).Also confirmed the strong combination of silicon and PDMS at the illustration of the part b of Figure 47 and the magnification at high multiple SEM image among the d.
In a word, the silicon nano thin-film can be integrally formed with the prestrain elastomeric substrate, to make up 2D " wavy " structure with multiple geometry.Many aspects of these system mechanics behaviors meet the theoretical prediction behavior well.These results are used in the application of the electronic device in the system that requires complete tensility between use or installation period.
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Embodiment 4: by using printed semiconductor nano material, heterogeneous integrated three-dimensional electronic device
We have developed a kind of simple approach, with classification widely different materials be incorporated in heterogeneous integrated (HGI) electronics system with two dimension or three-dimensional (3D) set of layouts.This process starts from synthesizing different semiconductor nano materials (for example, Single Walled Carbon Nanotube, and gallium nitride, silicon and arsenide gallium monocrystal nano wire/band) on the substrate that separates.To soft die and these substrates being used as the repeatedly application of alms giver's additive transfer process, and the formation of device thereupon and interconnection, produce high performance 3D-HGI electronic device, its combination in any with these (or other) semiconductor nano materials is incorporated on rigidity or the flexible device substrate.This general method can produce the unusual electronics system that is difficult in a large number maybe can not use the other technologies realization.
Many existing and emerging electronic devices, benefit from dissimilar semiconductors with two dimension or three-dimensional (2D or 3D) layout monolithic isomery integrated (HGI) in individual system.Example comprises Multifunctional radio-frequency communication device, infrared (IR) imaging camera, addressable sensor array and mixed type CMOS/ nano wire/nano-device circuit (3-7).In some representative system, often to introduce in the circuit of stacking three-dimensional structure, compound semiconductor or other materials provide high-speed cruising, efficient photoelectricity treater to survey or the sensing ability, and while silicon CMOS provides numeral to read with signal and processes.Wafer is used for two kinds of methods the most widely used of the three-dimensional HGI system of these types of realization in conjunction with (8) and epitaxial growth (9,10) representative.Last process relates to, and causes surface chemistry technique by using adhesive or heat, and integrated circuit, photodiode or the transducer that is respectively formed on the different semiconductor wafers carried out physical bond.This approach is effective in many cases, but it has important shortcoming, comprise that (i) expands to the limited in one's ability of large tracts of land or a considerable number of layer in the 3rd (stacking) dimension, (ii) incompatible with uncommon (for example nano structural material) or cryogenic material and substrate, (iii) be a challenge to the electrical interconnection of passing wafer making and aliging, (iv) smooth plane mating surface had strict demand, (v) by the mechanical strain that differential thermal expansion/contraction produces of totally different material, can bend and fracture.Epitaxial growth provides a kind of different way, and it relates to, and by molecular beam epitaxial growth or other means, directly forms the thin layer semi-conducting material on the surface of other materials wafer.Although the method has been avoided some foregoing problems, limited quality and the type of material that can be grown for epitaxial growth position strict, also be like this even if use resilient coating and other advanced technologies.By contrast, the semiconductor nano material of emerging classification, nano wire, band, film or particle such as inorganic material, or carbon back system, such as Single Walled Carbon Nanotube (SWNT) or graphene platelet (11-14), then can grow is suspended in the solvent or is transferred on the substrate, thereby avoids the requirement of epitaxial growth or wafer combination.Nearest work shows, for example, and integrated in the 2D layout of the intersection nano wire diode that is formed by solution casting (15).Show in this result who presents, different monocrystalline inorganic semiconductors (for example nano wire of GaN, Si and GaAs/band) are how to use upgradeable and deterministic printing process and can combination with one another, and with other types nano material (for example SWNT) combination, in 2D or 3D layout, to produce complicated HGI electronics system.Particularly, the ultra-thin multiple-level stack of high performance mos field-effect transistor (MOSFET), metal-semiconductor field effect transistor (MESFET), thin-film transistor (TFT), photodiode and other assemblies, be integrated in device array, gate and the active-addressed photodetector on rigid inorganic and the flexible plastic substrate, shown the some of them ability.
Figure 57 illustrates the exemplary steps for the manufacture of these 3D-HGI systems.This process starts from the synthetic of semiconductor nano material, and every kind of material all is on the source substrate of himself.Device integrated single-crystal Si, the GaN that herein illustrates and nano wire and the nanobelt of GaAs, it uses following process and is shaped: based on source material and the photoetching etching process (16-21) of wafer, and by the SWNT network of chemical vapour deposition (CVD) (13,21) growth.Scanning electron microscopy picture at Figure 57 top, with them behind the substrate removal of source, these semiconductor nano materials are shown.For carrying out the circuit manufacturing, these elements make or growth phase during still be retained in the structure that is defined on the wafer: be the array that aligns in the situation of Si, GaN and GaAs nano wire/band, and be inferior individual layer random network for SWNT.Be used for high temperature doping and annealing process to the ohmic contact of Si, GaN and GaAs, can carry out at the source substrate.Next step relates to, and uses aforesaid printing technology based on elastomeric stamp, with these treatment elements from the source substrate transfer to device substrate, such as the polyimides of in Figure 57, describing (PI) thin slice.Particularly, facing to source substrate lamination dimethyl silicone polymer (PDMS) die, the soft Van der Waals that has just created for the semiconductor nano material element adheres to contact.To with liquid prepolymer (for example be touched from the teeth outwards by the die of " ink-jet ", the device substrate of thin spin-coated layer polyamic acid) (for example, the PI thin slice), then solidify this prepolymer, just when die is removed, make these semi-conducting materials embed on this layer and be bonded in well this layer (16-20).Similarly process is applicable to multiple substrate (also namely, rigidity or flexibility; Organic or inorganic) and semiconductor nano material [one of this process version of slightly revising is used for SWNT (21)].For system described herein, the thickness of intermediate layer (being PI in the case) may diminish to 500nm, and 1-1.5 μ m normally.Through some extra processing, comprise forming gate-dielectric, electrode and interconnection that can repeat transfer printing and device fabrication steps, this step starts from the new prepolymer intermediate layer of spun on top of the circuit layer of formerly finishing.Be transfer printing or the custom-designed automatic phase of traditional masks calibrator, can on several square centimeters, the overlay registration accuracy reached～1 μ m (22) (Fig 61).By metal wire is evaporated on the opening in the intermediate layer that is limited by photo-patterns and/or dry etching and within, and the simple layer to layer interconnect (23) that forms.This unusual approach for the 3D-HGI electronic device has several key characters.At first, processing all on the device substrate occur under the cryogenic conditions, thereby avoid may causing causing in the multiple-level stack system differential thermal expansion/blockage effect of undesirable distortion.This operation also allows to use cold plastics substrate and intermediate layer material, and it helps to guarantee that the below circuit layer is not by the processing thermal degradation to the top device.Secondly, the method is applicable to the semiconductor nano material of the other scope of width variety, comprises emerging material, for example the SWNT film.The 3rd, soft die allows to carry out non-destructive with the below device layer and contacts; These dies with ultra-thin semi-conducting material, can also be tolerated the surface that slightly rises and falls.The 4th, ultra thin device geometry (＜1 μ m) and intermediate layer (＜1.5 μ m) are easy to form the electrical interconnection of layer to layer.Describe these in described several circuit demonstrations hereinafter and overcome the feature of many shortcomings of classical pathway.
Figure 58 illustrates three layers of 3D stacked array Si MOSFET, adopts the general technology flow process shown in Figure 57 to make above-mentioned array: the monocrystalline silicon nanobelt is contacted (being formed on the wafer of source), plasma enhanced chemical vapor deposition SiO with doping 2Dielectric, and Cr/Au metallising source electrode, drain and gate (24) use together.Each device uses the nanobelt of three alignment, and width, thickness and length are respectively 87 μ m, 290nm and 250 μ m.Fig. 2 A illustrates the vertical view light micrograph at the edge of system, and the layout of this system is designed to show separately support one deck of substrate, the part of two layers and three layers MOSFET.The device geometries of the second layer is carried out 90 degree rotations with respect to ground floor and the 3rd layer, help to illustrate the layout of native system.The schematic cross section and the inclination angle view that in Figure 58 B, present stacked structure.This sample can use the confocal optics microscopy to observe under 3D.Figure 58 C illustrates vertical view and the inclination angle view of this type of image, and is painted in order to observe.(quality of this image slightly descends with the degree of depth, and reason is scattering and the absorption on upper strata).[top grid MOSFET has channel length (L to the electrical measurement of representative device during Figure 58 D is presented on every layer c) 19 μ m, raceway groove crossover distance (L o)--being defined as the distance of grid extend through doped source/drain areas--is 5.5 μ m, and channel width (W) 200 μ m].Device on every one deck on these three layers is formed on the PI substrate, represents good characteristic (linear mobility 470 ± 30cm 2/ Vs, ON/OFF ratio＞104, and threshold voltage is-0.1 ± 0.2V), and between the device of different layers, do not have systemic difference.By repeating identical process, can add extra layer to this system.Except having single semi-conductive 3D circuit, shown in Figure 59, can also in multilayer, use various semiconductor to form complete 3D-HGI system.For this ability is described, we use GaN and Si nanobelt and SWNT film on the PI substrate, make the MESFET array (especially, High Electron Mobility Transistor, HEMT), MOSFET and TFT.Figure 59 A and 59B illustrate respectively optics and the confocal images of the magnification at high multiple of formed device.GaN HEMT on ground floor is used for source electrode and drain electrode with ohmic contact (Ti/Al/Mo/Au, wafer is annealed in the source), and Schottky (Ni/Au) contact is used for grid.Channel length and width, and grid width are respectively 10,170 and 5 μ m.Each device all uses GaN band (multiple-level stack by AlGaN/GaN/AlN forms), and its thickness, width and length are respectively 1.2,10 and 150 μ m, carries out electrical interconnection by processing in device substrate.SWNT TFT on the second layer is with SiO 2/ epoxy resin is used for gate-dielectric, and Cr/Au is used for source electrode, drain and gate, and its channel length and width are respectively 50 and 200 μ m.Si MOSFET uses the design identical with design shown in Figure 58.Can make up with the various combination of Si, SWNT and GaN other various 3D-HGI devices (Figure 61 and 62).Figure 59 C illustrates the current-voltage characteristic curve of the typical device in the system among Figure 59 A and the 59B.In all cases, characteristic is all similar to the characteristic that forms at the source wafer: the threshold voltage (V of GaNHEMT Th) be-2.4 ± 0.2V, ON/OFF ratio＞10 6, mutual conductance 0.6 ± 0.5mS; SWNT TFT has V Th=-5.3 ± 1.5V, ON/OFF ratio＞10 5, linear mobility 5.9 ± 2.0cm 2/ Vs; Si MOSFET has V Th=0.2 ± 0.3V, on-off ratio＞10 4, and linear mobility 500 ± 30cm 2/ Vs.Along with the use to thin PI substrate (25 μ m), thin device (2.4 μ m) and thin PI/PU intermediate layer (5 μ m), an aspect that is concerned by people of these devices is their mechanical flexible, and this application for flexible electronic device is very important.We will be to effective mutual conductance (g of the Si SWNT in the 3D-HGI of Figure 59 A system and GaN device Eff) assess as the function of crooked radian.Figure 59 D, it illustrates for the mutual conductance (g of case of bending not 0eff) carry out normalization and these data of drawing, illustrate the stability for little radius of curvature to 3.7mm.
The electrical interconnection that forms between these 3D-HGI devices not at the same level can create the circuit performance that is concerned by people.Thin condensate intermediate layer so that: by metal wire is evaporated on the opening that is limited by photoetching and within, just can easily form these interconnection.Figure 60 shows some examples.First example shown in Figure 60 A, is 3D NMOS inverter (gate), wherein drives Si MOSFET (L=4 μ m, W=200 μ m) and load Si MOSFET (L=4 μ m, W=30 μ m) occupy not at the same level.Adopt the 5V supply voltage, this double-deck inverter is showed well-defined transmission characteristic, and it has～2 gains, is comparable to the performance (25) of using similar transistorized conventional planar inverter.Figure 60 B illustrates a kind of inverter with Complementary Design (CMOS), and this Complementary Design uses integrated n raceway groove Si MOSFET and p raceway groove SWNT TFT, its design in case draw in the equilibrium with drop-down direction on current driving ability (Figure 65).What present in Figure 60 A is, adopts towards the 5V of vdd terminal bias voltage and from 0V and sweeps to the grid voltage (input) of 5V and the transfer curve of collection.Curve shape is quantitatively consistent with circuit numerical simulation (Figure 65) with gain (up to～7).As the 3rd example, we make up with flexible PI substrate on integrated GaAs metal-semiconductor-metal (MSM) infrared (IR) detector (26) of Si MOSFET, to show the ability for the manufacture of the structure cell that can in the active infra-red imager, use.In this example, be transferred to the printing nanobelt (thickness, width and length are respectively 270nm, 100 μ m and 400 μ m) of the GaAs on the substrate of the printed array with Si nanobelt MOSFET, form the basis of MSM.The electrode (Ti/Au=5/70nm) that is deposited on the end of these GaAs nanobelts forms back-to-back Schottky diode with 10 μ m intervals.Along with the intensity increase of infrared illumination, formed detector cell shows intensifying current (Figure 60 C), and (Figure 66) is consistent with circuit simulation.Response at about 0.30A/W at 850nm wavelength place is observed from 1 to 5V, and does not consider the light from Reflection of semiconductor surface.This system also shows about the flexible less than the radius of curvature of 1cm, and it can be used for senior system, such as the crooked focal plane array that is used for wide-angle infrared night vision imager.
The printed semiconductor nano material provides the new way for three-dimensional HGI system, and can have important application in various different application field, be not only from here those indicated application of described system, and in addition other application, comprise: have the integrated micro-fluidic device of reading with the sensing electronic device, include unusual sensing material the chemical/biological sensors system of traditional electronic device based on silicon in, and photon/electro-optical system that the optical transmitting set of compound semiconductor and silicon drive electronics or micro electromechanical structure are combined.In addition, the compatibility of the plastic of this approach and thin and lightweight can be for creating more chance with uncommon form factor or mechanical flexibility as the device of key feature.
Materials and methods: device manufacturing: silicon device: manufacture process starts from, by processing Silicon-On-Insulator wafer (SOI; Soitec unibond, 290nm top silicon layer, doping class 6 .0～9.4 * 10 14/ cm 3), the monocrystalline silicon strip of restriction contact doping.First step relates to phosphorus doping, uses Solid Source and rotary dopant (Filmtronic, P509), and the SiO of the plasma enhanced chemical vapor deposition (PECVD) of photoetching process restriction 2(Plasmatherm, 300nm, 900mTorr, 350sccm, 2%SiH 4/ He, 795sccm NO 2, 250 ℃) and as mask, diffuse into the position of silicon with the controlled doping thing.After mixing, pass the SF of the photoresist layer of patterning 6Plasma etching limits described band.With concentrated HF solution (Fisher Chemicals) buried oxide is carried out the undercutting etching, just described band is discharged from wafer.This process is finished the manufacturing of contact doping monocrystalline silicon zone.In next step, with smooth elastomer dimethyl silicone polymer (PDMS, A: B=1: 10, Sylgard 184, Dow Corning) die contacts with band coated with photoresist, then die is peeled off to returning, just will be with from wafer to remove, and allow described band be adhered to the surface of die by hydrophobic PDMS and the Van der Waals between the photoresist.By since thus " ink-jet " from the die of the of wafer s-Si band facing to 25 μ m polyimides (PI) sheet (Dupont, Kapton100E) carry out lamination, described PI sheet by spin coating with skim (～1.5 μ m) liquid PI precursor polyamic acid (Sigma_Aldrich Inc.).Solidify this precursor, peel off this PDMS die, and peel off photoresist, just stay band make on its surface that embeds the PI substrate and well with this surface binded.Gate dielectric is by one deck SiO 2(thickness～100nm) form this SiO 2Layer deposits by PECVD under 250 ℃ relative low temperature.Photoetching and CF 4Plasma etching limits the opening of the doped source/drain areas of leading to silicon.Source electrode, the drain and gate electrode of Cr/Au (5/100nm carries out electron beam evaporation from bottom to top, Temescal FC-1800) are limited by photoetching and Wet-type etching in one step.
The GaN device: the GaN micro-structural is made by heterostructure [AlGaN (18nm)/GaN (0.6 μ m)/AlN (0.6 μ m)/Si] on the GaN overall chip.The ohmic contact zone is limited by AZ 5214 photoresists, then uses the SiCl in the RIE system 4Plasma cleaning.Then pass through electron beam evaporation (Ti/Al/Mo) and thermal evaporation (Au), depositing Ti/Al/Mo/Au (15/60/35/50nm) metal level.The flush away photoresist just stays Metal Contact fully on GaN.At N 2850 ℃ of lower thermal annealings 30 seconds, form the ohmic contact zone in the environment.SiO 2(Plasmatherm, 300nm, 900mTorr, 350sccm, 2%SiH 4/ He, 795sccm NO 2, 250 ℃) and Cr metal (e-beam evaporator, 150nm) layer deposit as mask material, be used for inductively coupled plasma (ICP) etching subsequently.Lithographic plate photographic printing, Wet-type etching and RIE process (50mTorr, 40sccm CF 4, 100W, 14 minutes) and limit the band geometry of GaN.After removing photoresist with acetone, ICP dry ecthing (3.2mTorr, 15sccm Cl2,5sccm Ar ,-100V bias voltage, 14 minutes) be used to remove the GaN of exposure, and be etched into slightly Si (～1.5 μ m), to be easy to carry out anisotropic etching subsequently.Then, use tetramethyl oxyammonia (Aldrich, 150 ℃ continue 4 minutes and 30 seconds), silicon is etched away from the GaN below.Sample BOE (6: 1, NH 4F: soaked 30 seconds HF), to remove PECVD SiO 2, and at the electron beam evaporation SiO of the new 50nm of the top of GaN band deposition 2Layer.Subsequently, adopt the PDMS plate from the GaN band " ink-jet " of parent crystal sheet, carry out lamination facing to the PI sheet, this PI sheet coated with 2 μ m polyurethanes (PU, Norland light adhesive, No.73).Sample is exposed to ultraviolet ray (173 μ Wcm -2) 15 minutes, to solidify PU.PDMS is peeled off to returning, and removed electron beam SiO in 20 seconds by in BOE, soaking 2, cause the GaN element is transferred to plastic.Negative photoresist (AZ nLOF2020) is used for the Schottky contacts of Ni/Au (80/180nm) is carried out patterning.Photoresist removes (KWIK continues 30 minutes) with the AZ remover.
SWNT device: use chemical vapour deposition (CVD) (CVD) with at SiO 2The random network of the single Single Walled Carbon Nanotube of growth on the/Si wafer.The ferritin (SigmaAldrich) that is deposited on the substrate with methyl alcohol is used as catalyst.Feed gas is methane (1900sccm CH 4And 300sccmH 2).Quartz ampoule in stove adopts the flushed with argon gas of high fluidity, in order to cleaned before growth.At growing period, temperature is maintained at 900 ℃ and reaches 20 minutes.Described transfer printing or relate to the process that is similar to previously described printing perhaps relates to slightly diverse ways, and thick Au layer and PI precursor are applied to the SiO with described pipe in the method 2On/Si the substrate.After solidifying PI, Au/PI is peeled off to returning.This layer carried out lamination facing to the pre-patterned devices substrate coated with thin epoxy resin layer (SU8,150nm), then PI and Au layer are removed by oxygen reactive ion etching and Wet-type etching respectively, finish transfer printing.For the situation of bottom grid device, gate electrode and the dielectric of the pre-patterning of this substrate supports.Particularly, by photoetching the gate electrode of Cr/Au/Cr (2/10/10nm) is carried out patterning, then, use PECVD with the SiO of 300nm 2Be deposited on the substrate.Cr/Au (2/20nm) source electrode and drain electrode directly are limited to the top of pipe.
3D circuit: 3D silicon NMOS inverter: by the identical manufacture process of repeated application, make up multilayer device.Particularly, carry out the spin coating for the PI precursor at the top of the existing layer of device, and silicon ribbon is transferred at the top.Then adopt same process to make device.For the vertical metal interconnection, by the opening in AZ 4620 photoresist layers is carried out photo-patterns, limit electrode zone, then use the CF in the RIE system 4And O 2Plasma is with the SiO in this exposure area 2Etch away with PI.300nm Al is deposited in this zone, set up contact in the bottom, and by etched SiO 2Provide lasting electrical connection on the step edge that forms with PI.
SWNT and Si CMOS inverter: the SWNT device is contacted by Au (20nm) source/drain and forms, and this contact is limited on the managed network by photoetching.SiO 2(100nm)/the Si wafer substrates arranges gate-dielectric and grid.The SWNT transistor by selectivity coated with photoresist (AZ5214) after, just epoxy resin (SU8,500nm) is spun on this substrate.For cured epoxy resin after ultraviolet exposure, carried out lamination with the PDMS plate of the Si band of not mixing facing to this substrate by " ink-jet ", by slowly manually divesting it is removed subsequently, to finish transfer process.Cr/Au (5/100nm) is used as source electrode in the silicon device and the Schottky contacts of drain electrode.Al (100nm) is used for connecting SWNT and Si transistor.
With the integrated GaAs MSM IR detector of Si TFT: GaAs wafer (IQE Inc., Bethlehem, PA.) is used to produce back-to-back Schottky diode.These bands are produced by the high-quality GaAs overall chip with a plurality of epitaxially grown layers [Si-Doped n-type GaAs (120nm)/semi-insulating (SI)-GaAs (150nm)/AlAs (200nm)/SI-GaAs].The carrier concentration of N-shaped GaAs is 4 * 10 17Cm -3GaAs wafer with photoresist mask pattern is by anisotropically at etchant (4mL H 3PO 4(85% weight), 52mL H 2O 2(30% weight), and 48mL deionized water) middle etching.Employing etches away the AlAs layer with the HF solution of ethanol dilution (volume ratio 1: 2).Then 2nm Ti and 28nm SiO 2Deposited by electron-beam evaporator.Then, by the PDMS die of ink-jet with the GaAs band, be touched the Si transistor layer coated with PI (thickness 1.5 μ m).PDMS is peeled off to returning, and remove Ti and SiO with the BOE etchant 2, just finish the transfer printing to device substrate with GaAs.The metal (Ti/Au=5/70nm) that is used for Schottky contacts deposits by electron beam evaporation.GaAs back-to-back the electrical connection between Schottky diode and the SiMOSFET by following restriction: patterning one deck AZ 4620 photoresists at first, then use the CF in the RIE system 4And O 2Plasma etching penetrates opening, and then deposits the Al of 300nm.
Device property is described: analyzing parameters of semiconductor device (Agilent, 4155C) and traditional acquisition station all are used to diode and transistorized characteristic electron is described.The IR response is measured under the IRLED source of wavelength 850nm.
Circuit simulation: for measurement transfer curve and the emulation of CMOS inverter are made comparisons, rule of thumb produce the second level PSPICE model of n channel silicon MOSFET and p raceway groove SWNT TFT.These PSPICE models create based on the PSPICE MOSFET model (MbreakN and MbreakP) of giving tacit consent to, and PSPICE MOSFET model has the parameter of extraction to adapt to the measurement volt-ampere curve at the Si NMOS shown in Figure 65 B and SWNT PMOS.Use back-to-back Schottky diode and silicon MOSFET to be connected in series, rule of thumb set up the PSPICE model of GaAs MSM photodetector.
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The projection framework is following framework, and it is so that multiple device architectures and structure can be with to embed the useful structure that but is difficult to the feature functionality realized mutually integrated.The device that this framework allows to have important ability represents the function of electronics, optics, machinery and hot form.In many cases, this system utilizes the hierarchical structure of this type of effect, and to allow to adopt the results of property of clear and definite device grade, although for the sake of simplicity, hereinafter we discuss some specific embodiments according to the major function pattern.
Electronic system.Provide described framework at this most direct application form in field, it is conducive to design complicated compatible electronic device, it directly embeds high performance electronic circuit--display, sensing element, RF-ID label, comprise some challenging application forms, it is benefited from the high-performance electric electronic circuit is integrated in flexibly in the system-level architecture.Attainable whole mechanical accommodation is significantly expanded in design disclosed herein.It is by allowing to provide the regulation of certain architectures details to accomplish this point in the system rank, this regulation can be expanded the scope of endurable mechanical deformation--and far surpass the limit of common 1% strain, this limit is typically for based on the device to the Planar integration of assembly.These embodiment illustrate specific framework, it is used for the simplest system element--interconnection, its can be used to bear formal system the high level strain (on form factor＞30%, be suitable in display making up bus and interconnection), and prepare for other require higher machinery compatibility (tensility) form.Shown in the form factor that these benefits also can be extended to more complicated device level assembly, exemplary means as shown in Figure 31--GaAs MSM IR photodetector--.In the Complex Electronic Systems Based basically each functional unit can use herein the method for enlightenment to be integrated in the compatible form of custom-designed machinery.
Optical module and system.Optical module, for example waveguide can be crooked with extreme sensitivity response.Described method and system is provided for the new architecture of such devices, and it not only can tolerate mechanical bend, and the more important thing is and can utilize mechanical bend and functional performance is benefited.Can directly utilize the embodiment of the technology of method disclosed herein, comprise the advanced form of photonic component, include but are not limited to, waveguide optical coupler, and the correlation form of optical switch and limiter.System-level mechanical bend (by compression or prolongation) in integrated morphology provides a kind of direct mode to realize these functions.Loss in raceway groove also is directly related to the bending of waveguide--and high bending radius promotes to leak from core to the shell pattern with controlled manner.This type of effect can directly be applied in the multiple device.For example, Figure 67 schematically shows a kind of waveguide array, and it carries out controlled warp by the microscopic optical structure that part is adhered to deformable substrate and makes.Figure 67 A illustrates, and by for example by contact print assembly 330 (for example, waveguide is such as the micro-structural of optical fiber or other elongations) being attached to substrate 30, makes optics.This attached comprising by force in conjunction with contact area 310 and weak in conjunction with contact area 320 corresponding to elevated regions.In case distortion, the second electrode is warp, and the weak calmodulin binding domain CaM of waveguide is from the substrate physical separation, thereby produces elevated regions.This device can move as waveguide simply, and can have significant (5 to 50%) tensility (seeing Figure 67 B).Alternatively, can select the refractive index of waveguide and substrate and the index of warp geometry, so that device moves as optical switch, thereby allow light (Figure 67 B) under elongated condition to pass through, and not allowing light (Figure 67 A) under the shortening state to pass through, reason is the high curvature in the warp waveguide.
The mechanical function system.Common factor between mechanical devices and electronic device is the basis of several key technology types--inertia with other form power transducers, comprise both meeting the specific embodiment that immediate interests also have extensive use.Method and system disclosed herein provides a kind of approach of making the new model of such devices.Figure 68 is the exemplary embodiment of mechanical system, specifically is used for the winding multi-layer framework of capacitive couplings sensing.This exemplary architecture directly allows the power of important form to be correlated with, and sensing--of greatest concern is inertia and pressure measxurement.In all cases, the many system-level aspect--of greatest concern is zone and the dynamic range of optimum sensitivity--that method and system disclosed herein provides a kind of relatively directly mode to control these performance of devices allows they are integrated into system's (for example, by allowing in a new way integrated-optic device system) of compact novel form factor simultaneously.These structures are replenished the existing method for such devices based on MEMS.Referring to Figure 68, mechanical devices 400 (for example: accelerometer/pressure sensor) make by the controlled warp of the conductivity micro-structural by partly being attached to deformable substrate 30.This device architectures operates by the change of electric capacity of monitoring between bottom electrode 450 and another electrode 440, and the elevated regions 320 that the change of described electric capacity occurs in electrode 440 is by at the axial acceleration of z or pressure and with respect to the substrate displacement time.Device 400 is made by following process,, prepares electrode (bottom electrode 450) at substrate 30 that is, then by attached another electrode 440 of contact print.This attached contact area 310 that comprises strong combination and weak calmodulin binding domain CaM (also namely, below zone 320 in).In case distortion, 440 perks of the second electrode, and weak calmodulin binding domain CaM and substrate physical separation, thereby the zone 320 that produces projection.
Hot merit can device.Bulge-structure provided by the present invention causes new ability, to prepare that the complex electronics assembly is carried out the heat isolation.A kind of clear and definite device classification provides the conventional design to the pixel element of long wavelength's imaging system, it needs to provide control for system, read, data are processed and the high-performance electric sub-component of other functions carries out integratedly, and two terminal parts for thermal response (and for this embodiment) provide directly integrated and accurate thermal insulation simultaneously.The method of using the present invention to enlighten can realize the framework of this high request easily.In present case, can be with functional electronic building brick--such as the needed AD converter of read pixel--place near the infrared response element extremely that (suitable embodiment includes but are not limited to and is supported on Si 3N 4Si on the film and thin-film multilayer photoresist metal oxide), this feature can either simplified design can be strengthened the property again it.Of greatest concern is, system described herein and device provide and the such devices element is integrated in on-plane surface focuses on ability in the array.Figure 69 illustrates thermal device 500 (the hot instrument of microbolometer), makes by making the adiabatic micro-structural that partly is attached to deformable substrate carry out controlled perk.Device 500 is by being produced to the substrate 30 attached electrodes 550 that comprise heat proof material 560 by contact print.This is attached to comprise the contact area 310 of strong combination and corresponding to the weak calmodulin binding domain CaM of elevated regions 320.In case distortion, electrode 550 is with regard to perk, and weak calmodulin binding domain CaM is from the substrate physical separation, thereby produces elevated regions 320, its to a great extent with the isolation of described substrate heat, thereby accurate local temperature sensing is provided.
U.S. Patent application No.11/115,954,11/145,574,11/145,542,60/863,248,11/465,317,11/423,287,11/423,192 and 11/421,654 is all included in not quote with the afoul degree of the application's disclosure.
All lists of references in this application, for example patent documentation comprises and submitting to or issued patents document or equivalent; The patent application publication; With the file of non-patent literature or the material in other sources; Now all include in herein to quote mode, as including in to quote mode separately, each that is included into piece list of references (does not for example conflict with the application's disclosure at least partially mutually, the inconsistent list of references of part, the inconsistent part of this list of references is foreclosed, include in to quote mode).
Term used herein and expression way are as descriptive and nonrestrictive term, and do not mean that shown in the eliminating and any equivalent of described feature or its part to the use of such term and expression way yet, but should be realized that, in the possible scope of the present invention, can do various modifications.Therefore, be to be understood that, it is concrete open although the present invention has passed through preferred embodiment, but exemplary and optional feature, modifications and variations to concept disclosed herein, all can be appealed to application by those skilled in the art, and this adjustment and variation are considered to be in the scope that of the present invention as appended claim defines.In this specific embodiments that provides example that is useful embodiment of the present invention, it is obvious to the skilled person that and to use the various change example of the device in specification of the present invention, described, apparatus assembly, method step to implement the present invention.It is obvious to the skilled person that key element and step that the method that is applicable to this method and device can comprise a large amount of optional components, processing.
Every kind of statement or combination at the assembly of this description or illustration all can be used to implement the present invention, except as otherwise noted.
No matter when, as long as provide particular range in the specification, for example, and temperature range, time range or assembly or concentration range, then all intermediate ranges and subrange, and all independent values that comprise in this scope all mean and are included in the disclosure.Should be appreciated that any subrange in the scope that comprises or the subrange or independent value all can be got rid of in the claim from here in specification.
The technical merit that all patents of mentioning in this manual and disclosure are all indicated the those skilled in the art that the present invention relates to.All all include this paper in to quote mode at this list of references of quoting, with explanation at it state-of-art during open or submission date, and mean this information and can use herein if needed, belong to the particular of prior art with eliminating.For example; when the composition of claimed material, should be appreciated that known in the art and existing compound before the applicant makes invention; be included in the disclosed compound of the instructive of quoting in the list of references, all do not mean among the composition that is included in material required for protection herein.
As used herein, " comprising " and " comprising ", " containing " or " it is characterized in that " are synonym, and be pardon or open, and do not get rid of extra, not the statement key element or method step.As used herein, " by ... form " eliminating unspecified any key element, step or component in desired key element.As used herein, " substantially by ... form " do not get rid of the material or the step that do not affect in fact the fundamental sum of this claim novel feature.In each situation, term herein " comprises ", " substantially by ... form " and " by ... composition " in any, may be by any replacement in other two terms.The present invention described herein is suitable for realizing lacking in the situation of this not clear and definite disclosed any key element, restriction.
Those skilled in the art can understand, can not cause in the situation of inappropriate test, in practice of the present invention, can also adopt startup material, biomaterial, reagent, synthetic method, purification process, analytical method, assay method and biological method except the content of clear and definite example.Materials and method be in any functional equivalents known in the field, all means to comprise in the present invention.The term that has adopted and expression way all are used as descriptive and nonrestrictive term, do not mean that yet use this type of term and expression way will get rid of shown in and the equivalent of described feature or its part, yet should be realized that, can carry out various modifications within the scope of the invention.Therefore, will be appreciated that, although the present invention is concrete open by preferred embodiment and optional feature institute, but the modifications and variations to concept disclosed herein still can be appealed to use by those skilled in the art, and this type of adjustment and variation are regarded as in the scope that defines such as claims of the present invention.
Table 1: extract the parameter from the warp shown in (from experiment and calculating) Figure 31 A.This width (being 10 μ m for the sample shown in the figure also namely) that calculates the hypothesis active region before stretching with identical afterwards.
Prestrain Measure width (μ m) Molded breadth (μ m) Measuring amplitude A m(μm) Calculate amplitude A cal(μm) Calculate peak strain ε peak (％)
11.3％ 136.6 170.7 37.5 37.6 0.38
25.5％ 139.6 151.4 51.5 50.3 0.65
33.7％ 140.1 142.1 56.4 54.3 0.80
56.0％ 124.3 121.8 63.6 60.4 1.2
Table 2: extract the parameter from the warp shown in (from experiment and calculating) Figure 31 D.
Win(μm) Measure wavelength X m(μm) Calculate wavelength X cal(μm) Measuring amplitude A m(μm) Calculate amplitude A cal(μm) Calculate peak strain ε peak (％)
100 N/A 69 N/A 33.2 2.5
200 123 131 66.3 64.1 1.2
300 199 194 100.6 94.9 0.80
400 253 256 129.3 128.8 0.61

Claims (61)

  1. But 1. the stretching assembly of a device, but described stretching assembly comprises:
    Elastomeric substrate with contact surface;
    Be incorporated into the first end of described contact surface;
    Be incorporated into the second end of described contact surface; With
    Be arranged in the middle section between described first end and the second end;
    Wherein said first end and the motion toward each other of described the second end cause warp architecture and the contact surface of described elastomeric substrate and the physical separation between the described middle section in the described middle section, and the greatest physical separating distance between the contact surface of described middle section and described elastomeric substrate is more than or equal to 100nm and be less than or equal to 1mm.
  2. 2. but the stretching assembly of claim 1, the middle section of wherein said assembly is under the strain.
  3. 3. but the stretching assembly of claim 1, the middle section of wherein said assembly are arc.
  4. But 4. the stretching assembly of claim 1, the middle section of wherein said assembly comprises one or more zones, and these one or more zones are attached to described substrate to form and the described substrate a plurality of discrete curvature portion zone of physical contact not.
  5. 5. but the stretching assembly of claim 4, wherein the subregional amplitude of at least one described discrete curved face part is different from the subregional amplitude of another curved face part.
  6. 6. but the stretching assembly of claim 1, wherein said assembly comprises thickness greater than the banded structure of 100nm.
  7. 7. but the stretching assembly of claim 6, wherein said banded structure has the thickness between 300nm and 1mm.
  8. 8. but the stretching assembly of claim 1 comprises one or more and is selected from following material: metal, semiconductor, insulator, piezoelectric, ferroelectric material, magnetostrictive material, electrostriction material, superconductor, ferromagnetic material and thermoelectric material.
  9. 9. but the stretching assembly of claim 1 comprises the assembly that is selected from following device: electronic device, optics, photoelectric device, mechanical devices, micro electro mechanical device, nano-electromechanical device, micro-fluidic device and thermal device.
  10. 10. but the stretching assembly of claim 9, but wherein said stretching assembly is adjustable apparatus assembly, at least one optionally variation along with the degree of the strain of the described middle section that is provided by described warp architecture in its electrical characteristics, light characteristic or the mechanical property.
  11. But 11. the stretching assembly of claim 1, wherein said assembly is a stretchable interconnection structure of electronic device, and wherein said interconnection structure is created in the electrical connection between two or more apparatus assemblies of described electronic device, and can be compressed or be extended.
  12. But 12. the stretching assembly of claim 11, wherein said interconnection structure has bridging structure, and described bridging structure comprises the middle section peak, extends three or more interconnection from this peak.
  13. But 13. the stretching assembly of claim 11, the wherein said interconnection structure that stretches also comprises one or more touch pads, and described touch pad and described first end, described the second end or both all electrically contact.
  14. But 14. the stretching assembly of claim 13, wherein at least one described apparatus assembly and described touch pad electrically contact.
  15. 15. but the stretching assembly of claim 1, but wherein said stretching assembly is the apparatus assembly regulated of electronic device, and the described apparatus assembly of regulating has so at least a electrical characteristics: these at least a electrical characteristics optionally change along with the degree of strain of the described middle section that is provided by described warp architecture.
  16. But 16. the stretching assembly of claim 15, wherein said at least a electrical characteristics are selected from: electron mobility, resonance frequency, electricity are led and resistance.
  17. But 17. the stretching assembly of claim 15, the wherein said apparatus assembly of regulating comprises transistorized semiconductor channel.
  18. 18. but the stretching assembly of claim 1, but wherein said stretching assembly is the apparatus assembly regulated of optics, and the described apparatus assembly of regulating has so at least a light characteristic: the degree of strain of the described middle section that this at least a light characteristic provides along with described warp architecture and optionally changing.
  19. But 19. the stretching assembly of claim 18, wherein said at least a light characteristic is, described refractive index of regulating apparatus assembly, but or the incident wave beam of electromagnetic radiation with respect to the incidence angle on the surface of the middle section of described stretching assembly.
  20. But 20. the stretching assembly of claim 18, the wherein said apparatus assembly of regulating comprises waveguide, optical modulator, optical switch or filter.
  21. But 21. the stretching assembly of claim 1, but the apparatus assembly regulated that wherein said stretching assembly is device, the thermal conductivity that optionally changes is provided along with the degree of strain of the described middle section that is provided by described warp architecture the described apparatus assembly of regulating.
  22. But 22. the stretching assembly of claim 1, but wherein said stretching assembly is the thermal insulation assembly of device, wherein said middle section not with described elastomeric substrate physical contact.
  23. 23. but the stretching assembly of claim 22, wherein said middle section not with described elastomeric substrate thermo-contact, the one or more apparatus assemblies of wherein said central region support, thus so that isolated by described one or more apparatus assemblies and the described substrate heat of described central region support.
  24. But 24. the stretching assembly of claim 22, wherein said device is long wavelength's imaging system.
  25. 25. but the stretching assembly of claim 1, but wherein said stretching assembly is the actuator of mechanical devices, wherein said middle section is curved surface, but and its amplitude can be by compression or the described stretching assembly or be conditioned by applying electromotive force to described middle section of stretching.
  26. But 26. the stretching assembly of claim 25, wherein said mechanical devices is selected from: micro electro mechanical device, nano-electromechanical device and micro-fluidic device.
  27. 27. but the stretching assembly of claim 1 can bear and is up to 25% strain.
  28. 28. but device array that comprises the stretching assembly of a plurality of claims 1.
  29. 29. the device array of claim 28, wherein said device array have lattice structure, flower-like structure, bridge shape structure, or the combination in any of said structure.
  30. 30. the device array of claim 28 wherein, but by a plurality of stretching assemblies a plurality of apparatus assemblies are connected to adjacent apparatus assembly, but described stretching assembly comprises stretchable interconnection structure.
  31. 31. the device array of claim 30, wherein at least one interconnection structure is different from the orientation of another interconnection structure.
  32. 32. the device array of claim 28, wherein at least a portion of array comprises in one direction a plurality of interconnection structures parallel to each other of alignment, and perhaps a plurality of being interconnected on two or more directions is orientated.
  33. 33. the device array of claim 32, wherein at least one in parallel described a plurality of interconnection and at least another interconnection out-phase.
  34. 34. the device array of claim 28, wherein said device comprises two or more adjacent layers, but wherein each layer comprises a plurality of described stretching assemblies.
  35. 35. the device array of claim 28 can bear and is up to 150% strain and do not rupture.
  36. 36. it is curved surface, concave surface, convex surface or hemispherical surface that the device array of claim 28, wherein said substrate have at least a portion.
  37. 37. the device array of claim 28, but wherein said device is in the following tensile means one or more:
    Photodetector, photodiode array, display, luminescent device, photoelectric device, sensor array, sheet scanner, LED display, semiconductor laser array, optical imaging system, large area electron device, transistor array, logic gate array, microprocessor or integrated circuit.
  38. 38. but a method of making one or more stretching assemblies of device, described method comprises the following steps:
    Provide to have the elastomeric substrate of admitting the surface, wherein said substrate is set to have the first degree of strain;
    But the described admittance surface that first end and second end of described one or more stretching assemblies of device is attached to the described elastomeric substrate with described first degree of strain; And
    Apply power to described elastomeric substrate, this power makes the change of degree of strain generation from described the first degree of strain to the second degree of strain that is different from described the first degree of strain of described substrate, the described change of the degree of strain of wherein said substrate from described the first degree of strain to described the second degree of strain causes combined described first end and the second end to move towards one another and but described one or more stretching assembly is crooked, but thereby produce described one or more stretching assembly, but each stretching assembly has first end and the second end that is attached to described substrate, and the middle section that is set to warp architecture, described middle section separates with the admittance surface physics of described elastomeric substrate, and has more than or equal to 100nm and be less than or equal to the maximum separation distance of 1mm.
  39. 39. the method for claim 38, but wherein said integrating step comprises the following steps: to produce the calmodulin binding domain CaM of described stretching assembly and the pattern in non-binding zone, but the described calmodulin binding domain CaM of wherein said stretching assembly is incorporated into described elastomeric substrate, but and the described non-binding zone of wherein said stretching assembly and be not joined to described elastomeric substrate.
  40. 40. the method for claim 39, but wherein said non-binding zone corresponding to the described middle section of described stretching assembly, but and the described first end of wherein said one or more stretching assemblies and the second end corresponding to described calmodulin binding domain CaM.
  41. 41. the method for claim 38, but but also be included on the described stretching assembly, on the admittance surface of described elastomeric substrate or not only on the described stretching assembly but also on the admittance surface in described elastomeric substrate, produce the pattern of binding site.
  42. 42. the method for claim 38, wherein said elastomeric substrate comprises a plurality of flexible regions and a plurality of rigid region, the flexural rigidity of wherein said flexible region is less than the flexural rigidity of described rigid region, wherein but the described first end of each described stretching assembly and described the second end are incorporated at least one in the described rigid region, but and wherein the described middle section of each described stretching assembly be incorporated at least one described flexible region.
  43. 43. the method for claim 38, the step that wherein described power is applied to described elastomeric substrate is mechanically finished.
  44. 44. the method for claim 43, wherein said the first degree of strain, described the second degree of strain or both are all by elongation or compress described elastomeric substrate and produce.
  45. 45. the method for claim 38, wherein said the first degree of strain, described the second degree of strain or both all produce by solidifying described elastomeric substrate.
  46. 46. the method for claim 38, the step that wherein described power is applied to described elastomeric substrate is finished with hot mode.
  47. 47. the method for claim 46, the step that wherein described power is applied to described elastomeric substrate is finished by the temperature that raises or reduce described elastomeric substrate.
  48. 48. the method for claim 38, wherein said the first degree of strain, described the second degree of strain or both are brought out by the thermal expansion of described elastomeric substrate or heat and shrink and produce.
  49. 49. the method for claim 38, wherein said the first degree of strain or described the second degree of strain equal 0.
  50. 50. the method for claim 38, wherein but the first end of described one or more stretching assemblies and the second end are attached to this step of described admittance surface of described elastomeric substrate, before step as described below, carry out, namely, apply described power to described elastomeric substrate, this power makes the change of degree of strain generation from described the first degree of strain to the second degree of strain that is different from described the first degree of strain of described substrate.
  51. 51. the method for claim 38, wherein but the first end of described one or more stretching assemblies and the second end are attached to this step of described admittance surface of described elastomeric substrate, after step as described below, carry out, namely, apply described power to described elastomeric substrate, this power makes the change of degree of strain generation from described the first degree of strain to the second degree of strain that is different from described the first degree of strain of described substrate.
  52. 52. a two dimension can stretch and flexible device, but comprises the described stretching assembly of a plurality of claims 1.
  53. 53. the device of claim 52, wherein combined described first end and the second end are corresponding to the active substrate zone.
  54. 54. the device of claim 53, wherein said active substrate zone corresponding to:
    A. at the described contact surface of described substrate or the pattern in the adhesive site on the described assembly;
    B. underlay pattern or the assemblies physical parameter selected, described parameter is selected from following one or more:
    I. have substrate or component thickness that space thickness changes;
    Ii. the substrate or the assembly modulus that have the space modulus change;
    Iii. have substrate or assembly temperature that space temperature changes;
    Iv. substrate or assembly component; Has the space change of component;
    C. the chemical modification of the described contact surface of described substrate; And
    D. the zone adjacent with the free edge of described assembly on the described contact surface of described substrate.
  55. 55. the device of claim 52, the described contact surface substantially flat of wherein said substrate.
  56. 56. the device of claim 52, the described contact surface of wherein said substrate has one or more fluctuating feature.
  57. 57. the described device of claim 56, the described contact surface of wherein said substrate has curved surface or wavy part.
  58. But 58. the stretching assembly of claim 1, but also comprising the encapsulated layer of at least a portion that encases described stretching assembly, wherein said encapsulated layer is supported by the described contact surface of described substrate.
  59. 59. but the stretching assembly of claim 58, wherein said elastomer is dimethyl silicone polymer.
  60. 60. but the stretching assembly of claim 1, wherein said first end and described the second end described motor toward each other are relaxed to relaxed state from described elastomeric substrate from elongation state.
  61. But 61. the stretching assembly of claim 1, but the described motion toward each other of wherein said the first and second ends corresponding between the first end of described stretching assembly and the second end more than or equal to 20% and be less than or equal to 100% strain.
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