CN101752381B - Otp器件结构及其制备方法 - Google Patents

Otp器件结构及其制备方法 Download PDF

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Publication number: CN101752381B
Authority: CN; China
Prior art keywords: additional ions; floating boom; region; active area; electric capacity
Prior art date: 2008-12-10
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Active

Application number

CN 200810044082

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English (en)

Chinese (zh)

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CN101752381A (zh

Inventor

胡晓明

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Shanghai Huahong Grace Semiconductor Manufacturing Corp

Original Assignee

Shanghai Hua Hong NEC Electronics Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2008-12-10

Filing date

2008-12-10

Publication date

2013-07-24

2008-12-10 Application filed by Shanghai Hua Hong NEC Electronics Co Ltd filed Critical Shanghai Hua Hong NEC Electronics Co Ltd

2008-12-10 Priority to CN 200810044082 priority Critical patent/CN101752381B/zh

2010-06-23 Publication of CN101752381A publication Critical patent/CN101752381A/zh

2013-07-24 Application granted granted Critical

2013-07-24 Publication of CN101752381B publication Critical patent/CN101752381B/zh

Status Active legal-status Critical Current

2028-12-10 Anticipated expiration legal-status Critical

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CN 200810044082 2008-12-10 2008-12-10 Otp器件结构及其制备方法 Active CN101752381B (zh)

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CN 200810044082 CN101752381B (zh)	2008-12-10	2008-12-10	Otp器件结构及其制备方法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
CN 200810044082 CN101752381B (zh)	2008-12-10	2008-12-10	Otp器件结构及其制备方法

Publications (2)

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CN101752381A CN101752381A (zh)	2010-06-23
CN101752381B true CN101752381B (zh)	2013-07-24

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN102122642B (zh) *	2011-01-27	2015-12-02	上海华虹宏力半导体制造有限公司	Otp器件的形成方法
TWI606448B (zh)	2015-07-29	2017-11-21	國立交通大學	介電質熔絲型記憶電路及其操作方法
CN109103189B (zh) *	2018-07-11	2021-08-24	上海华虹宏力半导体制造有限公司	由n型电容耦合晶体管构成的一次可编程器件

Citations (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5504706A (en) *	1993-10-12	1996-04-02	Texas Instruments Incorporated	Low voltage Fowler-Nordheim flash EEPROM memory array utilizing single level poly cells
CN1147314A (zh) *	1994-03-03	1997-04-09	罗姆有限公司	一种利用福勒-诺德海姆可编程可擦的低压晶体管闪速电可擦可编程只读存贮器单元
US6282123B1 (en) *	1998-12-21	2001-08-28	Lattice Semiconductor Corporation	Method of fabricating, programming, and erasing a dual pocket two sided program/erase non-volatile memory cell
CN1505841A (zh) *	2001-05-01	2004-06-16	÷˹��ɷݹ�˾	具有不对称薄窗的eeprom单元
CN1819208A (zh) *	2004-12-28	2006-08-16	株式会社瑞萨科技	半导体存储装置
CN1828774A (zh) *	2005-03-02	2006-09-06	三洋电机株式会社	非易失性半导体存储装置及其制造方法
CN101315906A (zh) *	2007-05-31	2008-12-03	和舰科技(苏州)有限公司	一次可编程存储器的结构及其制造方法

2008
- 2008-12-10 CN CN 200810044082 patent/CN101752381B/zh active Active

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5504706A (en) *	1993-10-12	1996-04-02	Texas Instruments Incorporated	Low voltage Fowler-Nordheim flash EEPROM memory array utilizing single level poly cells
CN1147314A (zh) *	1994-03-03	1997-04-09	罗姆有限公司	一种利用福勒-诺德海姆可编程可擦的低压晶体管闪速电可擦可编程只读存贮器单元
US6282123B1 (en) *	1998-12-21	2001-08-28	Lattice Semiconductor Corporation	Method of fabricating, programming, and erasing a dual pocket two sided program/erase non-volatile memory cell
CN1505841A (zh) *	2001-05-01	2004-06-16	÷˹��ɷݹ�˾	具有不对称薄窗的eeprom单元
CN1819208A (zh) *	2004-12-28	2006-08-16	株式会社瑞萨科技	半导体存储装置
CN1828774A (zh) *	2005-03-02	2006-09-06	三洋电机株式会社	非易失性半导体存储装置及其制造方法
CN101315906A (zh) *	2007-05-31	2008-12-03	和舰科技(苏州)有限公司	一次可编程存储器的结构及其制造方法

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Legal Events

Date	Code	Title	Description
2010-06-23	C06	Publication
2010-06-23	PB01	Publication
2010-08-18	C10	Entry into substantive examination
2010-08-18	SE01	Entry into force of request for substantive examination
2013-07-24	C14	Grant of patent or utility model
2013-07-24	GR01	Patent grant
2014-02-05	ASS	Succession or assignment of patent right	Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140109
2014-02-05	C41	Transfer of patent application or patent right or utility model
2014-02-05	COR	Change of bibliographic data	Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI
2014-02-05	TR01	Transfer of patent right	Effective date of registration: 20140109 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd.