CN101771067B - Magnetic memory and driving method as well as manufacturing method thereof - Google Patents
Magnetic memory and driving method as well as manufacturing method thereof Download PDFInfo
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- CN101771067B CN101771067B CN2008101847058A CN200810184705A CN101771067B CN 101771067 B CN101771067 B CN 101771067B CN 2008101847058 A CN2008101847058 A CN 2008101847058A CN 200810184705 A CN200810184705 A CN 200810184705A CN 101771067 B CN101771067 B CN 101771067B
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Abstract
The invention relates to a magnetic memory and a driving method as well as a manufacturing method thereof. The magnetic memory comprises a plurality of lead structures, a plurality of first magnetic metal structures, a plurality of second magnetic metal structures and a plurality of insulating layers, wherein each first magnetic metal structure is arranged between two adjacent lead structures, and each second magnetic metal structure passes through each lead structure; the structure formed by the first magnetic metal structures and the second magnetic metal structures comprises a plurality of magnetic memory units which are connected mutually; and each magnetic memory unit is provided with a magnetic region and a magnetic wall which is close to the magnetic region, wherein the magnetic region is suitable for storing bit data.
Description
Technical field
The present invention relates to a kind of memory and driving method thereof and manufacturing approach, and be particularly related to a kind of magnetic storage and driving method and manufacturing approach.
Background technology
Fig. 1 illustrates the partial schematic diagram of known a kind of magnetic storage, and it is disclosed in the United States Patent (USP) notification number US6834005 patent case.Please with reference to Fig. 1, magnetic storage 100 comprises substrate 110, magnetic metal track 120, read element 130 and write element 140.Magnetic metal track 120 comprises a plurality of magnetic memory units which are connected mutually 122, and each magnetic memory cell 122 comprises 122M of memory portion and the 122W of intaglio portion (Notch).Generally speaking, magnetic storage 100 has the 122W of intaglio portion of periodic arrangement, in order to define position and the size of each 122M of memory portion.
Physical characteristic based on said structure and magnetic metal track 120 itself; Magnetic metal track 120 can be used to the recorded bit metadata; Wherein the 122M of memory portion is used for writing down 0 or 1 bit data, and the 122W of intaglio portion is used for distinguishing the bit data at a distance from its adjacent two 122M of memory portion.As shown in Figure 1, the 122M of memory portion utilizes the magnetic moment direction D in its region to define 0 or 1, and wherein the region of the 122M of memory portion is commonly referred to as magnetic region (magnetic domain).On the other hand; Because the magnetic moment direction (not illustrating) in the intaglio portion 122W region can be different from the magnetic moment direction D in its adjacent two memory portion 122M regions; Therefore; The 122W of intaglio portion can be in order to distinguish the bit data that write down at a distance from adjacent two magnetic regions, and wherein the region of the 122W of intaglio portion is commonly referred to as magnetic wall (domain wall).Can know that by Fig. 1 122M of memory portion (magnetic region) in each magnetic memory cell 122 and the 122W of intaglio portion (magnetic wall) are closely adjacent to each other.
Yet as far as technology, the technology that forms the intaglio 122W of portion is difficulty very, and its technology margin (process window) is low again, makes the yield of the 122W of intaglio portion of fabrication cycle property arrangement can't promote all the time.
Traditionally, utilize read element 130 to can read the bit data in the magnetic memory cell 122, and utilize write element 140 can write new bit data to magnetic memory cell 122.Need to prove that at this above-mentioned " writing " of mentioning is not that expression magnetic memory cell 122 can be noted down two bit data after it is written into new bit data, and is meant that original bit data can be by " renewal " in the magnetic memory cell 122.
Generally need to utilize to be about 10
7～10
8Ampere/square centimeter (Amp/cm
2) even the current peak of higher high-current pulse HP just can make the bit data shift out or move into the 122M of memory portion, and such electrical parameter makes magnetic storage 100 that the situation of suitable power consumption take place in the use.
Summary of the invention
The present invention provides a kind of magnetic storage, and it has the advantage of power saving in the use.
The present invention provides a kind of driving method of magnetic storage again, and its lower current impulse capable of using is to drive above-mentioned magnetic storage.
The present invention provides a kind of manufacturing approach of magnetic storage in addition, and it can reduce the complexity and the degree of difficulty of the technology of magnetic storage.
The present invention provides a kind of manufacturing approach of magnetic storage again, and it has higher technology yield.
For specifically describing content of the present invention, at this a kind of magnetic storage is proposed, this magnetic storage comprises many conductor structures, a plurality of first magnetic metal structure, second magnetic metal structure and the insulating barrier.Conductor structure is disposed on the substrate, and wherein conductor structure mutually disjoints.The first magnetic metal structural arrangements is on substrate, and each first magnetic metal structure is disposed at respectively between the two adjacent conductor structures.The second magnetic metal structural arrangements is on substrate, and wherein the second magnetic metal structure covers the conductor structure and the first magnetic metal structure, and crosses over conductor structure.In addition, the structure that constituted of the first magnetic metal structure and the second magnetic metal structure comprises a plurality of magnetic memory units which are connected mutually.Each magnetic memory cell has the magnetic wall (Domain Wall) of magnetic region (Magnetic Domain) and next-door neighbour magnetic region, and its medium magnetic area is suitable for the bit of storage metadata.Insulating barrier is disposed between the conductor structure and the first magnetic metal structure, and is disposed between the conductor structure and the second magnetic metal structure.
For specifically describing content of the present invention, a kind of driving method of aforesaid magnetic storage is proposed again at this.The driving method of this magnetic storage comprises: during displacement, provide AC signal to conductor structure.During this displacement, low current pulse to the second magnetic metal structure is provided, so that the bit data in each magnetic memory cell are able to shift out or move into the magnetic region.
For specifically describing content of the present invention, at this a kind of manufacturing approach of magnetic storage is proposed in addition, the manufacturing approach of this magnetic storage comprises: at first, on substrate, form many conductor structures, wherein conductor structure mutually disjoints.Moreover, on substrate, form insulating barrier, wherein insulating barrier covers conductor structure.Then, on insulating barrier, form a plurality of first magnetic metal structures, wherein the first magnetic metal structure is disposed at respectively between the two adjacent conductor structures.Afterwards, the first magnetic metal structure is implemented the annealing magnetization step, so that the first magnetic metal structure produces the magnetic coupling force direction.Then, on insulating barrier, form the second magnetic metal structure, wherein the second magnetic metal structure covers the first magnetic metal structure, and crosses over conductor structure.In addition, the bearing of trend of the second magnetic metal structure is different from the magnetic coupling force direction.In addition, the structure that the first magnetic metal structure and the second magnetic metal structure are constituted is divided into a plurality of magnetic memory units which are connected mutually through the configuration of conductor structure, and wherein each magnetic memory cell has the magnetic wall of magnetic region and next-door neighbour magnetic region.
For specifically describing content of the present invention, reintroduce a kind of manufacturing approach of magnetic storage at this.The manufacturing approach of this magnetic storage comprises: at first, on substrate, form many conductor structures, wherein conductor structure mutually disjoints.Then, on substrate, form insulating barrier, wherein insulating barrier covers conductor structure.Afterwards, on insulating barrier, form the magnetic metal structure, wherein the magnetic metal structure is crossed over conductor structure.In addition, the magnetic metal structure is divided into a plurality of magnetic memory units which are connected mutually through the configuration of conductor structure, and wherein each magnetic memory cell has the magnetic wall of magnetic region and next-door neighbour magnetic region.
Magnetic storage of the present invention is provided with conductor structure, and this measure required in the use power consumption of memory that can not only deperm can also reduce process complexity and the degree of difficulty of making magnetic storage.In other words, the comparatively power saving when driving magnetic storage of the present invention of the driving method of magnetic storage of the present invention, and the manufacturing approach of magnetic storage of the present invention can effectively improve the technology yield.
For let state feature and advantage on of the present invention can be more obviously understandable, hereinafter is special lifts preferred embodiment, and conjunction with figs., elaborates as follows.
Description of drawings
Fig. 1 illustrates the partial schematic diagram of known a kind of magnetic storage.
Fig. 2 illustrates the partial schematic diagram of a kind of magnetic storage of embodiments of the invention.
Fig. 3 be according among Fig. 2 along the generalized section of L1-L1 ' hatching.
Fig. 4 A and Fig. 4 B illustrate two kinds of drive waveforms figure of the magnetic memory cell of embodiments of the invention respectively.
Fig. 5 illustrates the driving method flow chart of the magnetic storage of embodiments of the invention.
Fig. 6 A～Fig. 6 E illustrates the manufacturing process sectional axonometric drawing of the magnetic storage of the first embodiment of the present invention.
Fig. 6 B ' illustrates substrate, conductor structure and the insulating barrier three's of the first embodiment of the present invention sectional perspective profile.
Fig. 7 illustrates the partial cutaway schematic of the magnetic storage of the second embodiment of the present invention.
Fig. 8 A～Fig. 8 C illustrates the manufacturing process sectional axonometric drawing of the magnetic storage of the second embodiment of the present invention.
Fig. 8 B ' illustrates substrate, conductor structure and the insulating barrier three's of the second embodiment of the present invention sectional perspective profile.
Description of reference numerals
100,200,700: magnetic storage
110,210,710: substrate
120: the magnetic metal track
122,260,760: magnetic memory cell
122M: memory portion
122W: intaglio portion
130,370,770: read element
140: write element
141: stray field
220,720: conductor structure
230: the first magnetic metal structures
240: the second magnetic metal structures
250,750: insulating barrier
260M, 760M: magnetic region
260W, 760W: magnetic wall
735: the magnetic metal structure
AC: AC signal
D, D2: magnetic moment direction
D1: magnetic coupling force direction
D3: magnetic direction
H: thickness
HP: high-current pulse
J
220, J
240: waveform
L1-L1 ': hatching
LP: low current pulse
S501, S503: step
T1: during the displacement
T2: during the read-write
W1, W2: width
Embodiment
First embodiment
Fig. 2 illustrates the partial schematic diagram of a kind of magnetic storage of embodiments of the invention.Fig. 3 be according among Fig. 2 along the generalized section of L1-L1 ' hatching.Please be simultaneously with reference to Fig. 2 and Fig. 3, the magnetic storage 200 of present embodiment comprises many conductor structures 220 that are disposed on the substrate 210, a plurality of first magnetic metal structure 230, the second magnetic metal structure 240 and insulating barrier 250.The material of aforesaid base plate 210 can be materials such as glass, pottery, semiconductor.
Aforementioned many conductor structures 220 mutually disjoint, and each first magnetic metal structure 230 is disposed at respectively between the two adjacent conductor structures 220, and the first magnetic metal structure 230 for example is arranged in a linear.The second magnetic metal structure 240 can cover conductor structure 220, insulating barrier 250 and the first magnetic metal structure 230, and crosses over conductor structure 220.Insulating barrier 250 is disposed between the conductor structure 220 and the first magnetic metal structure 230, so that the conductor structure 220 and the first magnetic metal structure 230 are electrically insulated; And insulating barrier 250 is disposed between the conductor structure 220 and the second magnetic metal structure 240, so that the conductor structure 220 and the second magnetic metal structure 240 are electrically insulated.
In the present embodiment; The first magnetic metal structure 230 and the second magnetic metal structure 240 belong to different retes; Wherein the material of the first magnetic metal structure 230 for example is antiferromagnetic materials (antiferromagnetic material), and the material of the second magnetic metal structure 240 for example is ferrimagnet (ferromagnetic material).In present embodiment, each first magnetic metal structure 230 is all annealed magnetization (magnetization) step in advance and is had the magnetic coupling force direction D1 of " incident paper " (with " adding X in the circle " symbolic representation).Be equivalent to magnetic fixed bed (magnetic pinned layer) in this first magnetic metal structure 230.Because the first magnetic metal structure 230 has the specific magnetic bonding force that the magnetic coupling force direction is D1, therefore the part second magnetic metal structure 240 of the first magnetic metal structure, 230 tops can receive the effect of this specific magnetic bonding force.Thus, these first magnetic metal structures 230 with specific bonding force with and the part second magnetic metal structure 240 of top can form a plurality of fixed fields (Pinning Field).In the present embodiment, magnetic wall (Domain Wall) 260W that forms between the different magnetic memory cells 260 of these first magnetic metal structures 230 with fixed field and the part second magnetic metal structure 240.
The sense of current of the data pulse that on the other hand, the part second magnetic metal structure 240 of conductor structure 220 tops also can be through the conductor structure 220 of flowing through produces corresponding magnetic moment direction D2.Because the sense of current of conductor structure 220 possibly be incident paper or outgoing paper, thereby makes corresponding in the second magnetic metal structure 240 can have to the right or magnetic moment direction D2 left.On the practice, magnetic moment direction D2 to the left or to the right can be in order to represent 0 or 1 bit data, and therefore, present embodiment claims that these have to the right or the part second magnetic metal structure 240 of magnetic moment direction D2 left is magnetic region (MagneticDomain) 260M.Each magnetic region 260M is suitable for storing bit data.
In the present embodiment, the thickness H of each conductor structure 220 is in fact between 10 nanometers (nm) to 50 nanometers.In addition, the width W 1 of each conductor structure 220 for example is between 50 nanometers and 500 nanometers, and wherein the width W 1 of conductor structure 220 should be looked the development of technology and decided, and the present invention does not limit.Conductor structure 220 for example is that the mode with periodic arrangement is disposed on the substrate 210, and makes the width W 2 of each first magnetic metal structure 230 roughly the same.Thus, magnetic storage 200 just has the magnetic wall 260W of periodic arrangement, and wherein the width of magnetic wall 260W is approximately tens nanometer to hundreds of nanometers.In a preferred embodiment, rough 65 nanometers that equal of the width of magnetic wall 260W.Likewise, magnetic storage 200 also has the magnetic region 260M of periodic arrangement, and the width of its medium magnetic area 260M is approximately tens nanometer to several microns (μ m).For instance, technology can make the width of magnetic region 260M reach 1～2 μ m at present, and in a preferred embodiment, rough 65 nanometers that equal of the width of magnetic wall 260W.
Traditionally, can utilize intaglio (Notch) to form the magnetic wall to distinguish at a distance from two adjacent magnetic regions.Yet present embodiment is provided with conductor structure 220 to form magnetic region 260M and two kinds of structures of magnetic wall 260W naturally.This measure helps to reduce complexity and the degree of difficulty in the technical process, and then promotes the technology yield.
As shown in Figure 3, the magnetic wall 260W with fixing magnetic coupling force direction D1 is between two adjacent conductor structures 220.Therefore, just can form magnetic wall 260W district at a distance from different magnetic region 260M through magnetic coupling force direction D1, its medium magnetic area 260M is suitable for storing 0 or 1 bit data.In the present embodiment, magnetic region 260M and next-door neighbour's thereof magnetic wall 260W constitutes magnetic memory cell 260, and thus, the structure that the first magnetic metal structure 230 and the second magnetic metal structure 240 are constituted just comprises a plurality of magnetic memory units which are connected mutually 260.
In the present embodiment, when the second magnetic metal structure 240 was imposed the forward current pulse, the bit data among each magnetic region 260M can be pushed to next magnetic region 260M.Otherwise when the second magnetic metal structure 240 was imposed reverse current pulses, the bit data among each magnetic region 260M can be pushed to previous magnetic region 260M.In brief, the bit data can shift out the magnetic region 260M at its place and move among the contiguous magnetic region 260M through the 240 received current impulses of the second magnetic metal structure, wherein the bit data shift out or move into magnetic region 260M during be called during the displacement.Yet during this displacement, the conductor structure 220 of present embodiment also can receive AC signal, so that the second magnetic metal structure 240 is able to receive the magnetic force pulse of certain CF.Because the AC signal of conductor structure 220 can provide the magnetic force pulse of certain CF to the second magnetic metal structure 240, therefore can reduce the magnitude of current of the current impulse that the second magnetic metal structure 240 is applied, and then reduce power consumption.Its relative theory please refer to E.Martinez, L.Lopez-Diaz, O.Alejos and L.Torres in (the PHYSICAL REVIEW B 77 that publishes thesis " Resonantdomain wall depinning included by oscillating spin-polarized currents in thinferromagnetic strips " in 2008; 144417) and L.Thomas, M.Hayashi, X.Jiang, R.Moriya, C.Rettner and S.S.P.Parkin in the (Nature that publishes thesis " Oscillatory dependence of current-driven magnetic domain wall motion oncurrent pulse length " in 2006; 443, pp.197-200).Next, the driving method of the magnetic memory cell 260 of present embodiment is described with signal waveforms.
Fig. 4 A and Fig. 4 B illustrate two kinds of drive waveforms figure, wherein J of the magnetic memory cell of the embodiment of the invention respectively
240Represent the low current impulse waveform that the second magnetic metal structure 240 is received, and J
220The signal waveform that expression conductor structure 220 is received.Please be earlier simultaneously with reference to Fig. 3 and Fig. 4 A, in the present embodiment, T1 during displacement, each conductor structure 220 receive AC signal AC and the second magnetic metal structure 240 receives low current pulse LP.Because the AC signal AC of conductor structure 220 provides the magnetic force pulse of certain CF to the second magnetic metal structure 240; Therefore the magnitude of current of the low current pulse LP that the second magnetic metal structure 240 is applied can reduce; At this moment, the bit data are able to shift out or move into magnetic region 260M according to low current pulse LP.
In the present embodiment, the frequency of aforementioned AC signal AC is in fact between 10
6Hertz (Hz) and 10
9Between hertz, and the current density of low current pulse LP is in fact between 10
6Ampere/square centimeter (Amp/cm
2) with 10
7Between the ampere/square centimeter.Compared to conventional magnetic, the present invention need not to use high-current pulse to move the bit data, but makes the bit data shift out or move into magnetic region 260M with low current pulse LP.Power consumption required when so, driving magnetic memory cell 260 just significantly reduces.
Then, T1 finishes during the displacement, and the bit data rest on just among the 260M of magnetic region that T1 begins during displacement next time, wherein the bit data rest among the 260M of magnetic region during be called T2 during the read-write.What deserves to be mentioned is, T2 during reading and writing, the bit data among the 260M of magnetic region are able to upgraded by its pairing conductor structure 220.Say that further the magnetic region 260M meta metadata of present embodiment is upgraded by the conductor structure under it 220.For instance; When the pairing magnetic moment direction D2 of magnetic region 260M meta metadata among Fig. 3 for left the time; Can during read-write, utilize the data pulse (electric current) of the conductor structure 220 of this magnetic region 260M below to produce high-intensity magnetic field by T2, so that magnetic region 260M meta metadata becomes magnetic moment direction D2 to the right.
Special one carry be, in the present embodiment, the signal waveform J that conductor structure 220 is received
220Bipolar (bipoloar) signal waveform that is illustrated for Fig. 4 A.Yet, in other embodiments, the signal waveform J that conductor structure 220 is received
220It also can be one pole (unipoloar) signal waveform that Fig. 4 B is illustrated.In brief, the present invention does not limit signal waveform J
220State.
Traditionally, extra write element can be set to upgrade the bit data in the magnetic region in magnetic storage.Yet the conductor structure 220 that the present embodiment utilization corresponds to magnetic region 260M carries out the bit updating data.Thus, present embodiment just need not to set up extra write element, and this measure can be simplified the framework of magnetic storage 200, also reduces the complexity of technology.Need to prove at this, in the present embodiment, can from many conductor structures 220, optionally adopt one of them conductor structure 220 to carry out the action of above-mentioned updated space metadata.In other embodiments, also can from many conductor structures 220, select one of them conductor structure 220 (mainly writing lead), and select said lead adjacent 2 or more auxiliary leads that write of conductor structures 220 conducts of mainly writing to call in the following text.T2 during reading and writing then; Provide data pulse (data current) to produce high-intensity magnetic field at the said lead that mainly writes; Provide false impulse (auxiliary current) to produce auxiliary magnetic field at the said auxiliary lead that writes simultaneously, so that the said bit data that mainly write among the pairing magnetic region 260M of lead are updated.Wherein, the magnetic force of aforementioned auxiliary magnetic field is not enough to change the magnetic moment direction of other magnetic regions.So, can promote the success rate that the bit data write.
Under the those of ordinary skill of technical field when visual its demand, at random from many conductor structures 220, select wherein the lead of a lead as the updated space metadata.In other embodiments, also possibly from many conductor structures 220, select one one or whole lead, side by side to a plurality of magnetic memory cell 260 updated space metadata.
On the other hand, the bit data among the 260M of magnetic region also can be read in the T2 during read-write.Particularly, in the present embodiment, magnetic storage 200 can further comprise read element 370, and wherein the configurable top in the second magnetic metal structure 240 of read element 370 is so that read the bit data among its pairing magnetic region 260M.
Above narration is put in order, and present embodiment provides a kind of driving method of magnetic storage 200 in addition, the driving method flow chart of the magnetic storage that for example Fig. 5 illustrated.Please be simultaneously with reference to Fig. 3, Fig. 4 and Fig. 5, in step S501, T1 during displacement provides AC signal AC to conductor structure 220.In step S503, T1 during displacement provides low current pulse LP to the second magnetic metal structure 240, so that the bit data in each magnetic memory cell 260 are able to shift out or move into magnetic region 260M.Step S501 and step S503 that it should be noted that present embodiment are generation simultaneously.As for magnetic storage 200 other details of operations in the T2 during T1 or the read-write during displacement, can be with reference to above stated specification, at this repeated description not.
According to above-mentioned magnetic storage 200; Present embodiment also provides a kind of manufacturing approach of magnetic storage 200; The three-dimensional section flow chart that is illustrated like Fig. 6 A～Fig. 6 E, wherein Fig. 6 A～Fig. 6 E only illustrates among Fig. 2 the localized magnetization memory 200 along L1-L1 ' hatching.At first, please with reference to Fig. 6 A, on substrate 210, form many conductor structures 220, wherein conductor structure 220 mutually disjoints.In the present embodiment, conductor structure 220 for example is to be disposed at parallel to each other on the substrate 210.
Moreover, please with reference to Fig. 6 B, on substrate 210, form insulating barrier 250, wherein insulating barrier 250 covers conductor structure 220.In the present embodiment, insulating barrier 250 for example is comprehensive ground covered substrate 210 and conductor structure 220.Yet in other embodiments, the demand of visual actual product and patterned insulation layer 250 are so that insulating barrier 250 covered substrate 210 local or even cover the part of conductor structure 220 only.For instance; Shown in Fig. 6 B '; The pattern of insulating barrier 250 can be formed at substrate 210 according to the pattern of conductor structure 220, and wherein insulating barrier 250 for example is to cover conductor structure 220 sheerly, but does not cover the part substrate 210 between adjacent two conductor structures 220.In brief, the pattern of insulating barrier 250 mainly is to be principle with the be electrically insulated conductor structure 220 and the first/the second magnetic metal structure 230/240, so the present invention does not limit the pattern of insulating barrier 250.
Present embodiment will adopt the insulating barrier 250 shown in Fig. 6 B.Then, please with reference to Fig. 6 C, on insulating barrier 250, form a plurality of first magnetic metal structures 230, wherein the first magnetic metal structure 230 for example is arranged in a linear and is disposed at respectively between the two adjacent conductor structures 220.In the present embodiment, the end face of the first magnetic metal structure 230 for example is that the end face with insulating barrier 250 trims, so that the end face of the end face of the first magnetic metal structure 230 and insulating barrier 250 constitutes flat top S.In addition; The material of the first magnetic metal structure 230 comprises ferrimagnet or antiferromagnetic materials; Wherein ferrimagnet for example is ferro-cobalt (CoFe), ferronickel (NiFe), ferro-cobalt boron (CoFeB) ... etc. ferrimagnet or ferroplatinum (FePt), the cobalt-platinum alloy (CoPt) of horizontal ... wait rectilinear ferromagnetic alloy material, and antiferromagnetic materials for example are platinum manganese alloy (PtMn), iridium manganese alloy (IrMn) ... etc.
Afterwards, please with reference to Fig. 6 D, the first magnetic metal structure 230 is imposed the annealing magnetization step.The aforementioned annealing magnetization step of implementing is enough to make the first magnetic metal structure 230 forever to have the specific magnetic bonding force and produce magnetic coupling force direction D1.In the present embodiment, magnetic coupling force direction D1 for example is the direction of incident paper.
Then, please with reference to Fig. 6 E, on insulating barrier 250, form the second magnetic metal structure 240, wherein the second magnetic metal structure 240 for example is to be formed on the flat top S of substrate 210.The second magnetic metal structure 240 can cover the first magnetic metal structure 230, and crosses over conductor structure 220.In addition, the bearing of trend of the second magnetic metal structure 240 is different from magnetic coupling force direction D1, and wherein the bearing of trend of the second magnetic metal structure 240 for example is perpendicular to magnetic coupling force direction D1.In the present embodiment, the material of the second magnetic metal structure 240 for example be horizontal ferrimagnet (like ferro-cobalt, ferronickel, ferro-cobalt boron ... etc.) or rectilinear ferromagnetic alloy material (like ferroplatinum, cobalt-platinum alloy ... etc.) etc. ferrimagnet.So far above-mentioned, the magnetic storage 200 of present embodiment roughly completes.
Hold above-mentioned; The structure that the first magnetic metal structure 230 and the second magnetic metal structure 240 are constituted is divided into a plurality of magnetic memory units which are connected mutually 260 through the configuration of conductor structure 220; Each magnetic memory cell 260 magnetic wall 260W of having magnetic region 260M and being close to this magnetic region 260M wherein, and 260W magnetic wall is between two adjacent conductor structures 220.
Can know that by above-mentioned processing step present embodiment can utilize general photoetching etching to accomplish the making of magnetic storage 200.Compared to the essential intaglio of making is to form the magnetic wall traditionally, present embodiment not only has the advantage of simplifying technology, can also effectively improve the technology yield.
Second embodiment
The spirit and first embodiment that the present embodiment desire is set forth are similar, and compared to first embodiment, present embodiment is same rete (being magnetic metal structure 735) with the first magnetic metal structure and the second magnetic metal designs simplification of previous embodiment further.
Fig. 7 illustrates the partial cutaway schematic of the magnetic storage of the second embodiment of the present invention.Please with reference to Fig. 7, the magnetic storage 700 of present embodiment comprises many conductor structures 720, magnetic metal structure 735 and the insulating barrier 750 that is disposed on the substrate 710.The material of aforesaid base plate 710 can be materials such as glass, pottery, semiconductor.
Aforementioned many conductor structures 720 mutually disjoint, and magnetic metal structure 735 covers conductor structure 720 and insulating barrier 750, and cross over conductor structure 720.Wherein, magnetic metal structure 735 for example is arranged in a linear.Insulating barrier 750 is disposed between conductor structure 720 and the magnetic metal structure 735, so that conductor structure 720 is electrically insulated with magnetic metal structure 735.
Hold above-mentionedly, the magnetic metal material is deposited on the conductor structure 720 and forms magnetic metal structure 735, therefore can be regarded as conductor structure 720 is embedded in magnetic metal structure 735.Through being embedded in many conductor structures 720 in the magnetic metal structure 735, can in magnetic metal structure 735, define a plurality of magnetic memory cells 760.By the magnetic metal structure 735 of embedded many leads, its effect is equivalent to have among Fig. 1 the magnetic metal track 120 of the 122W of intaglio portion, has but omitted the technology of making intaglio traditionally.This measure helps to reduce complexity and the degree of difficulty in the technical process, and then promotes the technology yield.
That is to say,, can form the magnetic wall 760W between the different magnetic memory cells 760 in the part magnetic metal structure 735 above the conductor structure 720 through the special construction of embedded lead.Therefore in twos between the adjacent magnetic wall 760W (just between adjacent two conductor structures 720) form magnetic region 760M, wherein each magnetic region 760M is suitable for storing bit data.
The sense of current of data pulse of adjacent two conductor structures 720 of flowing through can provide jointly to the right or magnetic direction D3 left to this magnetic region 760M between the two, with the magnetic moment direction of this magnetic region of setting/change 760M.For instance; When the pairing magnetic direction D3 of magnetic region 760M meta metadata among Fig. 7 for to the right the time; Can during read-write, utilize the data pulse (flowing out the electric current of paper) of two adjacent conductor structures 720 of this magnetic region 760M to produce high-intensity magnetic field jointly by T2, so that this magnetic region 760M meta metadata becomes magnetic direction D3 left.
Magnetic direction D3 to the right aforementioned or left can be defined as 0 or 1 bit data.Can know that by Fig. 7 the magnetic region 760M of present embodiment is between two adjacent conductor structures 720, and the magnetic direction D3 (metadata of ascending the throne) among the two adjacent magnetic region 760M can be separated to come by the district through magnetic wall 760W.
In the present embodiment, the thickness H of each conductor structure 720 is in fact between 10 nanometer to 50 nanometers.In addition, the width W 1 of each conductor structure 720 for example is between 50 nanometers and 500 nanometers, and wherein the width W 1 of conductor structure 220 should be looked the development of technology and decided, and the present invention does not limit.Conductor structure 720 for example is that the mode with periodic arrangement is disposed on the substrate 710.Thus, magnetic storage 700 just has the magnetic wall 760W and the magnetic region 760M of periodic arrangement, wherein magnetic wall 760W and magnetic region 760M be set to interlaced with each other.In addition, the width of magnetic wall 760W can be less than the width W 1 of conductor structure 220, and it is approximately tens nanometer to hundreds of nanometers.In a preferred embodiment, rough 65 nanometers that equal of the width of magnetic wall 260W.The width of magnetic region 760M can be greater than the width of magnetic wall 260W, and it is approximately hundreds of nanometers to several micron grade.In a preferred embodiment, rough 65 nanometers that equal of the width of magnetic wall 260W.In addition, in the present embodiment, magnetic region 760M and next-door neighbour's thereof magnetic wall 760W constitutes magnetic memory cell 760.In other words, magnetic metal structure 735 comprises a plurality of magnetic memory units which are connected mutually 760.
From the above, magnetic metal structure 735 is divided into a plurality of magnetic memory units which are connected mutually 760 through the configuration of conductor structure 720, and wherein each magnetic memory cell 760 has the magnetic wall 760W of magnetic region 760M and next-door neighbour magnetic region 760M.In other words, present embodiment is to utilize conductor structure 220 to form magnetic region 260M and two kinds of structures of magnetic wall 260W naturally, utilizes the making intaglio to form the difficulty in process degree that the magnetic wall is caused traditionally to overcome.
In the present embodiment, the mode of operation of magnetic storage 700 also can be divided into during the read-write and displacement during during two sections.Yet the driving method of the magnetic memory cell of present embodiment and first embodiment are similar, and its detailed description can and illustrate with reference to Fig. 4, Fig. 5 of first embodiment.
What specify is that T1 during displacement, each conductor structure 720 receive AC signal AC and magnetic metal structure 735 reception low current pulse LP.Because the AC signal AC of conductor structure 720 provides the magnetic force pulse of certain CF to magnetic metal structure 735, the magnitude of current of the low current pulse LP that therefore magnetic metal structure 735 is applied can reduce.At this moment, the bit data can shift out among the magnetic region 760M magnetic region 760M that also immigration is close at its place through magnetic metal structure 735 received low current pulse LP.On the other hand, T2 during reading and writing, the bit data among the 760M of magnetic region can be read or upgrade.In the present embodiment, the bit data among the 760M of magnetic region are to be updated through its pairing conductor structure 720.More particularly, the bit data among the 760M of magnetic region are upgraded by its two adjacent conductor structure 720.Present embodiment can be from many conductor structures 720 optionally adopts wherein two adjacent wires structures 720 to carry out the action of above-mentioned updated space metadata.In addition, magnetic storage 700 can further comprise read element 770, and to carry out the action of reading of bit data, wherein read element 770 is configurable in the below of magnetic metal structure 735, so that read the bit data among its pairing magnetic region 760M.
Traditionally, extra write element can be set to upgrade the bit data in the magnetic region in magnetic storage.Yet the conductor structure 220 that the present embodiment utilization corresponds to magnetic region 260M carries out the bit updating data.Thus, present embodiment just need not to set up extra write element, and this measure can be simplified the framework of magnetic storage 200, also reduces the complexity of technology.
So, the those of ordinary skill of affiliated technical field is at random selected the lead of adjacent two leads as the updated space metadata when visual its demand from many conductor structures 720.Perhaps, utilize the described method of first embodiment, come the contraposition metadata to upgrade mainly to write lead with the auxiliary notion that writes lead, and then promote the success rate that the bit data write.In other embodiments, also possibly from many conductor structures 720, select adjacent two leads of many groups, with side by side to a plurality of magnetic memory cell 760 updated space metadata.
From the above, therefore the action that the AC signal AC that present embodiment utilizes low current pulse LP and the conductor structure 720 of arranging in pairs or groups is received can make the bit data shift out or move into magnetic region 260M, has the advantage of power saving in the use at magnetic storage 700.In addition, the conductor structure 720 of present embodiment also can carry out the bit updating data, so magnetic storage 700 also need not to set up write element.
According to above-mentioned magnetic storage 700, present embodiment also provides a kind of manufacturing approach of magnetic storage 700, and like the three-dimensional section flow chart that Fig. 8 A～Fig. 8 E is illustrated, wherein Fig. 8 A～Fig. 8 E only illustrates magnetic storage 700 partly.At first, please with reference to Fig. 8 A, on substrate 710, form many conductor structures 720, wherein conductor structure 720 mutually disjoints.In the present embodiment, conductor structure 720 for example is to be disposed at parallel to each other on the substrate 710.
Then, please with reference to Fig. 8 B, on substrate 710, form insulating barrier 750, wherein insulating barrier 750 covers conductor structure 720.In the present embodiment, insulating barrier 750 for example is comprehensive ground covered substrate 710 and conductor structure 720.Yet in other embodiments, the demand of visual actual product and patterned insulation layer 750 are so that insulating barrier 750 covered substrate 710 local or even cover the part of conductor structure 720 only.For instance; Shown in Fig. 8 B '; The pattern of insulating barrier 750 can be formed at substrate 710 according to the pattern of conductor structure 720, and wherein insulating barrier 750 for example is to cover conductor structure 720 sheerly, but does not cover the part substrate 710 between adjacent two conductor structures 720.In brief, the pattern of insulating barrier 750 mainly is to be principle with the conductor structure 720 of being electrically insulated with magnetic metal structure 735, so the present invention does not limit the pattern of insulating barrier 750.
Present embodiment will adopt the insulating barrier 250 shown in Fig. 8 B.Afterwards, please with reference to Fig. 8 C, on insulating barrier 750, form magnetic metal structure 735, wherein magnetic metal structure 735 is for example crossed over conductor structure 720 with being arranged in a linear.In the present embodiment, the material of magnetic metal structure 735 for example be horizontal ferrimagnet (like ferro-cobalt, ferronickel, ferro-cobalt boron ... etc.) or rectilinear ferromagnetic alloy material (like ferroplatinum, cobalt-platinum alloy ... etc.) etc. ferrimagnet.So far above-mentioned, the magnetic storage 700 of present embodiment roughly completes.
In the present embodiment, be to utilize general photoetching etching to accomplish the making of magnetic storage 700.Compared to the essential intaglio of making is to form the magnetic wall traditionally, present embodiment has advantages such as the technology of simplification and yield lifting.
In sum, magnetic storage of the present invention is provided with conductor structure, and this measure required in the use power consumption of memory that can not only deperm can also reduce process complexity and the degree of difficulty of making magnetic storage.The letter speech, utilize the driving method of magnetic storage of the present invention to drive the advantage that magnetic storage of the present invention can have power saving.In addition, the manufacturing approach of magnetic storage of the present invention can reduce the degree of difficulty and the complexity of technology, and then effectively promotes the technology yield.
Though the present invention discloses as above with preferred embodiment; Right its is not in order to limit the present invention; Has those of ordinary skill in the technical field under any; Do not breaking away from the spirit and scope of the present invention, when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking the claim person of defining.
Claims (61)
1. magnetic storage comprises:
Many conductor structures are disposed on the substrate, and said conductor structure mutually disjoints;
A plurality of first magnetic metal structures are disposed on the said substrate, and the wherein said first magnetic metal structure is disposed at respectively between the two adjacent conductor structures;
The second magnetic metal structure; Be disposed on the said substrate; Cover said conductor structure and the said first magnetic metal structure, and cross over said conductor structure, the structure that wherein said first magnetic metal structure and the said second magnetic metal structure are constituted comprises a plurality of magnetic memory units which are connected mutually; The magnetic wall that each magnetic memory cell has the magnetic region and is close to said magnetic region, said magnetic region is suitable for the bit of storage metadata; And
Insulating barrier is disposed between said conductor structure and the said first magnetic metal structure, and is disposed between said conductor structure and the said second magnetic metal structure.
2. magnetic storage as claimed in claim 1, wherein said conductor structure receives AC signal during displacement.
3. magnetic storage as claimed in claim 2, wherein said bit data are able to the low current pulse that is received according to the said second magnetic metal structure and shift out or move into said magnetic region during said displacement.
4. magnetic storage as claimed in claim 1, wherein the said magnetic wall in said magnetic region in each magnetic memory cell and the adjacent magnetic memory cell is connected with each other.
5. magnetic storage as claimed in claim 1, the wherein said first magnetic metal structure is arranged in a linear.
6. magnetic storage as claimed in claim 1, wherein said first magnetic metal structure and the said second magnetic metal structure belong to same rete.
7. magnetic storage as claimed in claim 6, wherein said magnetic region is between two adjacent conductor structures.
8. ferrimagnet and the rectilinear ferromagnetic alloy material that magnetic storage as claimed in claim 6, the material of wherein said first magnetic metal structure and the said second magnetic metal structure comprise horizontal at least one of them.
9. magnetic storage as claimed in claim 8, the ferrimagnet of wherein said horizontal comprise ferro-cobalt, ferronickel or ferro-cobalt boron.
10. magnetic storage as claimed in claim 8, wherein said rectilinear ferromagnetic alloy material comprises ferroplatinum or cobalt-platinum alloy.
11. magnetic storage as claimed in claim 1, wherein said first magnetic metal structure and the said second magnetic metal structure belong to different retes.
12. magnetic storage as claimed in claim 11, the wherein said first magnetic metal structure has the specific magnetic bonding force.
13. magnetic storage as claimed in claim 12, wherein said magnetic wall between two adjacent conductor structures, and have said specific magnetic bonding force and the magnetic coupling force direction that produces.
14. magnetic storage as claimed in claim 11, the material of the wherein said first magnetic metal structure comprise antiferromagnetic materials and ferrimagnet at least one of them.
15. magnetic storage as claimed in claim 14, wherein said antiferromagnetic materials comprise platinum manganese alloy or iridium manganese alloy.
16. magnetic storage as claimed in claim 14, wherein said ferrimagnet comprise horizontal ferrimagnet and rectilinear ferromagnetic alloy material at least one of them.
17. magnetic storage as claimed in claim 16, the ferrimagnet of wherein said horizontal comprise ferro-cobalt, ferronickel or ferro-cobalt boron.
18. magnetic storage as claimed in claim 16, wherein said rectilinear ferromagnetic alloy material comprises ferroplatinum or cobalt-platinum alloy.
19. magnetic storage as claimed in claim 11, the material of the wherein said second magnetic metal structure comprises ferrimagnet.
20. magnetic storage as claimed in claim 19, wherein said ferrimagnet comprise horizontal ferrimagnet and rectilinear ferromagnetic alloy material at least one of them.
21. magnetic storage as claimed in claim 20, the ferrimagnet of wherein said horizontal comprise ferro-cobalt, ferronickel or ferro-cobalt boron.
22. magnetic storage as claimed in claim 21, wherein said rectilinear ferromagnetic alloy material comprises ferroplatinum or cobalt-platinum alloy.
23. magnetic storage as claimed in claim 1, wherein the thickness of each conductor structure is between 10 nanometer to 50 nanometers.
24. magnetic storage as claimed in claim 1, wherein the width of each conductor structure is between 50 nanometer to 500 nanometers.
25. magnetic storage as claimed in claim 1, the width of wherein said magnetic region are that tens nanometer is to several microns.
26. magnetic storage as claimed in claim 1, the width of wherein said magnetic wall are tens nanometer to hundreds of nanometers.
27. magnetic storage as claimed in claim 1, wherein during reading and writing, the said bit data in one of them said magnetic region are able to upgraded by its pairing conductor structure.
28. magnetic storage as claimed in claim 27, the said bit data in the wherein said magnetic region are upgraded by its two adjacent conductor structure.
29. magnetic storage as claimed in claim 27, the said bit data in the wherein said magnetic region are upgraded by the conductor structure under it.
30. magnetic storage as claimed in claim 1 also comprises:
Read element is disposed at one of them below of the said first magnetic metal structure, during reading and writing, is able to read the said bit data in its pairing said magnetic region.
31. magnetic storage as claimed in claim 1 also comprises:
Read element is disposed at the top of the said second magnetic metal structure, during reading and writing, is able to read the said bit data in its pairing said magnetic region.
32. the driving method of a magnetic storage as claimed in claim 1 comprises:
During displacement, AC signal to said conductor structure is provided; And
During said displacement, low current pulse to the said second magnetic metal structure is provided, so that the said bit data in each magnetic memory cell are able to shift out or move into said magnetic region.
33. the driving method of magnetic storage as claimed in claim 32 also comprises:
During reading and writing, provide data pulse to said conductor structure one of them, make the said bit data in its pairing said magnetic region be able to be updated.
34. the driving method of magnetic storage as claimed in claim 32 also comprises:
During reading and writing, data pulse to two wherein adjacent conductor structures of said conductor structure are provided, make the said bit data in its pairing said magnetic region be able to be updated.
35. the driving method of magnetic storage as claimed in claim 32 also comprises:
During reading and writing, utilize read element to read the said bit data in one of them said magnetic region.
36. the driving method of magnetic storage as claimed in claim 32, the frequency of wherein said AC signal is between 10
6Hertz and 10
9Between hertz.
37. the driving method of magnetic storage as claimed in claim 32, the current density of wherein said low current pulse is between 10
6～10
7Between the ampere/square centimeter.
38. the manufacturing approach of a magnetic storage comprises:
On substrate, form many conductor structures, and said conductor structure mutually disjoints;
On said substrate, form insulating barrier, and cover said conductor structure;
On said insulating barrier, form a plurality of first magnetic metal structures, the wherein said first magnetic metal structure is disposed at respectively between the two adjacent conductor structures;
The said first magnetic metal structure is implemented the annealing magnetization step, so that the said first magnetic metal structure produces the magnetic coupling force direction; And
On said insulating barrier, form the second magnetic metal structure, cover the said first magnetic metal structure, and cross over said conductor structure, and the bearing of trend of the said second magnetic metal structure is different from said magnetic coupling force direction;
Wherein, The structure that said first magnetic metal structure and the said second magnetic metal structure are constituted is divided into a plurality of magnetic memory units which are connected mutually through the configuration of said conductor structure, and each magnetic memory cell magnetic wall of having the magnetic region and being close to said magnetic region.
39. the manufacturing approach of magnetic storage as claimed in claim 38, the method that wherein on said substrate, forms the said first magnetic metal structure comprises:
The end face of the said first magnetic metal structure and the end face of said insulating barrier trim, so that the end face of the end face of the said first magnetic metal structure and said insulating barrier constitutes flat top.
40. the manufacturing approach of magnetic storage as claimed in claim 39, the method that wherein on said substrate, forms the said second magnetic metal structure comprises:
On said flat top, form the said second magnetic metal structure.
41. the manufacturing approach of magnetic storage as claimed in claim 38, wherein said magnetic wall is between two adjacent conductor structures.
42. the manufacturing approach of magnetic storage as claimed in claim 38, wherein the said magnetic wall in said magnetic region in each magnetic memory cell and the adjacent magnetic memory cell is connected with each other.
43. the manufacturing approach of magnetic storage as claimed in claim 38, the bearing of trend of the wherein said second magnetic metal structure is perpendicular to said magnetic coupling force direction.
44. the manufacturing approach of magnetic storage as claimed in claim 38, the wherein said first magnetic metal structure is arranged in a linear.
45. the manufacturing approach of magnetic storage as claimed in claim 38, the material of the wherein said first magnetic metal structure comprise antiferromagnetic materials and ferrimagnet at least one of them.
46. the manufacturing approach of magnetic storage as claimed in claim 45, wherein said antiferromagnetic materials comprise platinum manganese alloy or iridium manganese alloy.
47. the manufacturing approach of magnetic storage as claimed in claim 45, wherein said ferrimagnet comprise horizontal ferrimagnet and rectilinear ferromagnetic alloy material at least one of them.
48. the manufacturing approach of magnetic storage as claimed in claim 47, the ferrimagnet of wherein said horizontal comprise ferro-cobalt, ferronickel or ferro-cobalt boron.
49. the manufacturing approach of magnetic storage as claimed in claim 47, wherein said rectilinear ferromagnetic alloy material comprises ferroplatinum or cobalt-platinum alloy.
50. the manufacturing approach of magnetic storage as claimed in claim 38, the material of the wherein said second magnetic metal structure comprises ferrimagnet.
51. the manufacturing approach of magnetic storage as claimed in claim 50, wherein said ferrimagnet comprise horizontal ferrimagnet and rectilinear ferromagnetic alloy material at least one of them.
52. the manufacturing approach of magnetic storage as claimed in claim 51, the ferrimagnet of wherein said horizontal comprise ferro-cobalt, ferronickel or ferro-cobalt boron.
53. the manufacturing approach of magnetic storage as claimed in claim 51, wherein said rectilinear ferromagnetic alloy material comprises ferroplatinum or cobalt-platinum alloy.
54. the manufacturing approach of a magnetic storage comprises:
On substrate, form many conductor structures, and said conductor structure mutually disjoints;
On said substrate, form insulating barrier, and cover said conductor structure; And
On said insulating barrier, form the magnetic metal structure, and cross over said conductor structure,
Wherein, said magnetic metal structure is divided into a plurality of magnetic memory units which are connected mutually through the configuration of said conductor structure, and each magnetic memory cell magnetic wall of having the magnetic region and being close to said magnetic region.
55. the manufacturing approach of magnetic storage as claimed in claim 54, wherein said magnetic region is between two adjacent conductor structures.
56. the manufacturing approach of magnetic storage as claimed in claim 54, wherein the said magnetic wall in said magnetic region in each magnetic memory cell and the adjacent magnetic memory cell is connected with each other.
57. the manufacturing approach of magnetic storage as claimed in claim 54, wherein said magnetic metal structure is arranged in a linear.
58. the manufacturing approach of magnetic storage as claimed in claim 54, the material of wherein said magnetic metal structure comprises ferrimagnet.
59. the manufacturing approach of magnetic storage as claimed in claim 58, wherein said ferrimagnet comprise horizontal ferrimagnet and rectilinear ferromagnetic alloy material at least one of them.
60. the manufacturing approach of magnetic storage as claimed in claim 59, the ferrimagnet of wherein said horizontal comprise ferro-cobalt, ferronickel or ferro-cobalt boron.
61. the manufacturing approach of magnetic storage as claimed in claim 59, wherein said rectilinear ferromagnetic alloy material comprises ferroplatinum or cobalt-platinum alloy.
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| US6834005B1 (en) * | 2003-06-10 | 2004-12-21 | International Business Machines Corporation | Shiftable magnetic shift register and method of using the same |
| US6867468B2 (en) * | 2002-08-30 | 2005-03-15 | Hewlett-Packard Development Company, L.P. | Magnetic shielding for reducing magnetic interference |
| CN101026002A (en) * | 2006-02-23 | 2007-08-29 | 三星电子株式会社 | Magnetic memory device using magnetic domain motion |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6867468B2 (en) * | 2002-08-30 | 2005-03-15 | Hewlett-Packard Development Company, L.P. | Magnetic shielding for reducing magnetic interference |
| US6834005B1 (en) * | 2003-06-10 | 2004-12-21 | International Business Machines Corporation | Shiftable magnetic shift register and method of using the same |
| CN101026002A (en) * | 2006-02-23 | 2007-08-29 | 三星电子株式会社 | Magnetic memory device using magnetic domain motion |
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