CN101790800B - Optoelectronic device with upconverting luminophoric medium - Google Patents
Optoelectronic device with upconverting luminophoric medium Download PDFInfo
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- CN101790800B CN101790800B CN200880101599.0A CN200880101599A CN101790800B CN 101790800 B CN101790800 B CN 101790800B CN 200880101599 A CN200880101599 A CN 200880101599A CN 101790800 B CN101790800 B CN 101790800B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/7767—Chalcogenides
- C09K11/7769—Oxides
- C09K11/7771—Oxysulfides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/4935—Heat exchanger or boiler making
Abstract
A microelectronic device that in operation generates or includes component(s) that generate heat, in which the device comprises a heat conversion medium that converts such heat into a light emission having a shorter wavelength than such heat, to thereby cool the device and dissipate the unwanted heat by such light output. The heat conversion medium can include an upconverting luminophoric material, e.g., an anti-Stokes phosphor or phosphor composition. The provision of such heat conversion medium enables thermal management of microelectronic devices, e.g., optoelectronic devices, to be achieved in an efficient manner, to prolong the operational service life of devices such as LEDs, laser diodes, etc. that are degraded in performance by excessive heat generation in their operation.
Description
Technical field
The present invention relates to opto-electronic device, and relate to for going up conversion (upconvert) medium by use to realize the operation of device and/or the layout of heat management and the method for performance improvement.
Background technology
It is the problem of sustainable existence in electronic device that heat produces, because superheated can be damaged microelectronic component and circuit, and reduces device performance.That existing heat dissipating method in integrated circuit and microelectronic component depends on is heat sink, fan, coolant media and other heat transfer unit (HTU), to guarantee that the operation of device or circuit is maintained in desired scope.
Conventionally, opto-electronic device is in the face of the heat management problems identical with electronic device, and use is via the cooling corresponding heat dissipating method of conduction, radiation, conversion and/or direct mechanical.
Opto-electronic device can adopt up-conversion luminescence medium, so that primary radiation input is converted to higher frequency radiant output.Example comprises harmonic wave photoelectron frequency mixer, photoelectron photo-detector device, slab guide amplifier, FRET (FRET) device etc., and it is used in the various application such as imaging, Video processing, optical storage of data, subcarrier-modulated etc.
According to following mode, that is, can not only avoid relevant degeneration and the infringement to this device of heat, and because adopted thermal management technology can also be realized the mode that the output of this device increases, the heat management of realizing opto-electronic device will be very favorable.In the design of the lamp in current and foreseeable future, in the situation that the temperature of light-emitting diode (LED) raises, for such innovation, there is new demand.
Summary of the invention
The present invention relates to microelectronic component, for example, such as the opto-electronic device of light-emitting diode (LED), and relate to for operating the device such with heat management to realize layout and the method for performance improvement.
A broad aspect of the present invention relates to microelectronic component, its Heat of Formation in operation, or comprise the parts of Heat of Formation, wherein, device comprises hot transfer medium, and it comprises transmitting transition material, and described material is converted to heat to have than more short wavelength's the light transmitting of this heat.
In another broad aspect, the present invention relates to microelectronic component, its Heat of Formation in operation, or comprise the parts of Heat of Formation, wherein, device comprises hot transfer medium, its by heat be converted to can efficiently radiates heat light transmitting.
Another aspect of the present invention relates to microelectronic component, its Heat of Formation in operation, or comprise the parts of Heat of Formation, wherein, device comprises up-conversion, and it produces the light through upper conversion in response to heat, external light source and/or from the energy of the active area of microelectronic component.
Another aspect of the present invention relates to microelectronic component, and it comprises heat-dissipating structure, described heat-dissipating structure Heat of Formation in device operation; And be exposed to this up-conversion luminescent material of hankering and responsively heat be converted to light, with device is cooling by this light thus, and dispel the heat.
On the other hand, the present invention relates to microelectronic component, described microelectronic component Heat of Formation in device operation; And up-conversion, described up-conversion is arranged to reduce the heat energy of device and/or is exposed to this at up-conversion to produce the light in visible spectrum hot in the situation that.
Another aspect of the present invention relates to microelectronic component, and it comprises a plurality of up-conversions, and described a plurality of up-conversions comprise: the first up-conversion, its in response to heat energy to produce the light through upper conversion; And second up-conversion, it is in response to heat energy, produce the light through upper conversion through the light of upper conversion and/or from the energy of the active area of microelectronic component.
Another aspect of the present invention relates to microelectronic component, and it comprises up-conversion and lower conversion (down-convert) material, and each is all arranged in the interaction of carrying out energy in device.
In aspect another, the present invention relates to microelectronic component, it comprises a plurality of upper conversions and/or lower conversion element, and the energy that described element responds is launched in any light-emitting zone of microelectronic component, to produce the predetermined light output spectrum for microelectronic component.
Another aspect of the present invention relates to composite material, and it comprises anti-Stokes phosphor (anti-Stokes phosphor) and Stokes phosphor.
Aspect a main method, the present invention relates to the method for heat management microelectronic component, comprise up-conversion is combined in wherein, described up-conversion produces the light through upper conversion in response to heat, external light source and/or from the energy of the active area of microelectronic component.
Aspect another, the present invention relates to the microelectronic component of Heat of Formation in operation to carry out the method for heat management, comprise and utilize up-conversion luminescent material to absorb heat, described material is exposed to this heat, responsively heat is converted to light output, with thus by cooling this device of light output with dispel the heat.
In the method on the other hand, the present invention relates to the microelectronic component of Heat of Formation in device operation to carry out the method for heat management, comprise the heat energy that reduces device by the heat energy of device and the interaction of up-conversion, and/or in the situation that up-conversion is exposed to produced by device hot, be created in the light in visible spectrum.
Another method of the present invention aspect relates to the method for microelectronic component being carried out to heat management, and it is included in wherein in conjunction with a plurality of up-conversions, and described a plurality of up-conversions comprise: the first up-conversion, and it produces the light through upper conversion in response to heat energy; And second up-conversion, it,, in response to heat energy, the light through upper conversion from the first up-conversion, external light source and/or from the energy of the active area with microelectronic component, produces the light through upper conversion.
Another aspect of the present invention relates to the method for microelectronic component being carried out to heat management, it is included in wherein in conjunction with up-conversion, described up-conversion, in response to heat energy, the light through upper conversion from the first up-conversion, external light source and/or from the energy of the active area of microelectronic component, produces the light through upper conversion.
Another aspect of the present invention relates to the method for semiconductor device being carried out to heat management, and it is included in wherein in conjunction with up-conversion and lower transition material, and each is all arranged to for carry out the interaction of energy at device.
Another aspect of the present invention relates to the method for producing microelectronic component, it is included in described microelectronic component in conjunction with a plurality of upper conversions and/or lower conversion element, the energy that described a plurality of upper conversion and/or lower conversion element are launched in response to any light-emitting zone of microelectronic component, to produce the predetermined light output spectrum for this microelectronic component.
On the other hand, the open and claims from following, make feature of the present invention and embodiment will become clearer.
Accompanying drawing explanation
Fig. 1 is the partial elevation view of photoelectron luminescence component, described photoelectron luminescence component comprises light-emitting diode and lower conversion luminescence medium, described lower conversion luminescence medium is arranged to receive the primary radiation from light-emitting diode, wherein, described photoelectron luminescence component is included in the anti-Stokes phosphor film on the side surface of diode support.
Fig. 2 is the cross-sectional elevational view of photoelectron luminescence component according to another embodiment of the present invention, and it comprises first time conversion luminescence medium, second time conversion luminescence medium and anti-Stokes phosphor film.
Fig. 3 is the partial elevation view of opto-electronic device according to another embodiment of the present invention.
Fig. 4 is the perspective view of composite phosphor particle, and it comprises initial lower converting phosphor phosphor bodies, and described main body has the discontinuous film region of the anti-Stokes phosphor of deposition thereon.
Fig. 5 be there is the anti-Stokes phosphor from substrate adjoining course upwards or the indicative icon of the LED module of the LED outwardly, install on surface.
Fig. 6 is the indicative icon with the LED module of parts LED, and described parts LED is positioned on the substrate of the layer thereon with anti-Stokes phosphor.
Fig. 7 is the anti-Stokes phosphor of LED/ assembly, and wherein, LED and anti-Stokes phosphor layer are disposed on substrate.
Embodiment
The present invention relates to microelectronic component, for example, comprise the opto-electronic device of light-emitting diode (LED), and relate to heat management for this device to realize layout and the method for performance improvement.
With reference to luminous (light transmitting) material and as used herein term " anti-Stokes " refers to not the material in accordance with Stokes second law, and described Stokes second law refers to that the photoemissive photon energy of material is lower than absorbed incident photon energy.On the contrary, Stokes material is observed this law, and absorbs incident radiation and responsively with the longer wavelength more low-energy light time of transmitting, demonstrate so-called Stokes shift when it.
By example, can be in the wave-length coverage of 1500-1610nm such as the anti-Stokes material of phosphor radiosensitive, and responsively launch the light of 950-1075nm wave-length coverage.Known many such materials, comprise by such as erbium (Er
3+), ytterbium (Yb
3+) or thulium (Tm
+ 3) the rare earth ion doped material of trivalent ion.A kind of such material is Tm
+ 3the ZrF of doping
4-BaF
2-LaF
3-AlF
3-NaF-PbF
2material.Other suitable materials include, but are not limited to Y
2o
2s:Yb, Tm; La
2o
2s:Er, Yb; Y
2o
2s:Er, Yb; YF
3: Er, Yb; Y
2o
3-YOF:Er, Yb; And YOCl:Er, Yb.
An aspect of of the present present invention relates to microelectronic component, and it produces in operation heat or comprises the parts that generation is hot, and described device comprises hot transfer medium, and it is converted to this heat the light transmitting with the wavelength shorter than this hot wavelength.By this layout, with respect to the corresponding microelectronic component of this hot transfer medium not, cooling this microelectronic component to a greater degree, wherein, by cooling heat radiation of radiation of microelectronic component.
In one embodiment, the object of the present invention is to provide a kind of microelectronic component, it comprises: heat-dissipating structure, and it produces heat in the operation of device; And be exposed to this up-conversion luminescent material of hankering and responsively heat be converted to light output, to carry out cooling device and to dispel the heat by thering is like this light of higher frequency thus.
On the other hand, the object of the invention is to provide a kind of microelectronic component, described microelectronic component produces heat in operation, or comprise and produce hot parts, wherein, described device comprises up-conversion, and described up-conversion produces the light through upper conversion in response to heat, external light source and/or from the energy of the active area of microelectronic component.In a particular embodiment, microelectronic component is the opto-electronic device such as light-emitting diode or laser diode, and up-conversion can reduce heat energy and/or be created in the light in visible spectrum.
In other embodiments, microelectronic component can comprise a plurality of up-conversions, and the first up-conversion produces the light through upper conversion in response to heat energy, and the second up-conversion is in response to heat energy, produce the light through upper conversion from the light through upper conversion of the first up-conversion and/or from the energy of the active area of microelectronic component.In another embodiment, the second up-conversion can respond the energy producing from lower transition material.
On the other hand, the present invention relates to microelectronic component, it comprises such as the up-conversion of anti-Stokes phosphor and such as the lower transition material of Stokes phosphor.In a particular embodiment, lower transition material will be converted to visible ray on heat energy, and lower converting phosphor body in response to the energy of launching from the active area of microelectronic component produce through the light of conversion.
In a particular embodiment, through upper conversion and through the light of lower conversion all in visible spectrum, and to comprise that the form of the composite material of anti-Stokes phosphor and traditional Stokes phosphor provides transition material.
In other embodiments, microelectronic component can comprise a plurality of lower conversions and/or upper conversion element, and it is in response to the energy of launching any light-emitting zone from microelectronic component, to produce the specific output spectrum for microelectronic component.
Another aspect of the present invention relates to the method for the hot microelectronic component of generation in operation being carried out to heat management, it comprises and utilizes up-conversion luminescent material to absorb heat, described up-conversion luminescent material is exposed to this to be hankered, responsively heat is converted to light output, to carry out cooling device and to dispel the heat by light output thus.
Various specific embodiment of the present invention adopts up-conversion luminescence medium, for heat is converted to visible ray, with cooling opto-electronic device effectively.
More specifically, can adopt anti-Stokes phosphor as coolant media, for the useless heat that the operation at opto-electronic device is produced, be converted to visible radiation.Anti-Stokes phosphor comprises: have and can absorb, for example, the 2-3 of the long wavelength radiation in an infrared spectrum region photon, and this radiation is carried out to upper conversion, to launch the material of ability of the single photon of visible radiation; And the other materials that demonstrates anti-Stokes behavior together with light photon absorbs an infrared photon.The behavior is compared with the response of observing the conventional phosphors of stokes' lsw, and according to described stokes' lsw, what have a long wavelength more luminously produces by short wavelength's exciting radiation more.
The discovery of various embodiment of the present invention based on following,, can usefully adopt anti-Stokes phosphor that the heat producing in opto-electronic device is converted to light output, and anti-Stokes phosphor for example, is excited to launch light output by heat (, photon and/or photon heat energy).
According to the anti-Stokes phosphor in one embodiment of the invention, be for example arranged to by directly conduction and/or radiation thermal conduction and receive from the light of opto-electronic device assembly input, and to realize this thermal power transfer be light transmitting.
By this, arrange, opto-electronic device assembly is carried out to heat management, make the useless heat producing in operation be dissipated as luminous energy.If opto-electronic device is to be suitable for luminous type, for example, light-emitting diode, LED-based lamp assembly, display etc., or otherwise, as photon signal source in device, the hot heat eliminating medium producing for the operation of removing at device or for the indicator signal of the excessive condition of heat of device, can adopt this of luminous energy to supplement to increase the output of opto-electronic device.
In this case, anti-Stokes phosphor medium provides refrigerating function, and it can improve even eliminates the hot ill effect producing in the operation of opto-electronic device.Therefore, owing to not needing traditional hot ballast (thermal ballast) structure, fan, heat exchanger, or at least substantially can reduce size, so simplified device manufacture.In addition, by reducing the heat load on electronic device assembly, the service life of the thermoinduction parts of this assembly can correspondingly increase, and makes assembly can maintain operation before can and substituting in necessary repairing.
The anti-Stokes phosphor using in a plurality of different embodiment of the present invention can be any suitable type, for example, is configured and is arranged as for absorbing heat energy from electronic device assembly, and be converted into the phosphor of heat radiation light output.The example of the anti-Stokes phosphor that can usefully adopt in extensive use of the present invention comprises, but be not limited to the anti-Stokes phosphor of formula L:M, wherein, L is yittrium oxide, yttrium fluoride, fluorine yittrium oxide, oxychloride yttrium, oxygen yttrium sulfide or ytterbium oxychloride, and M is one or more in ytterbium, erbium and thulium.
The specific example of the such anti-Stokes phosphor that can usefully adopt in application-specific includes, but are not limited to Y
2o
2s:Yb, Tm; La
2o
2s:Er, Yb; Y
2o
2s:Er, Yb; YF
3: Er, Yb; Y
2o
3-YOF:Er, Yb; YOCl:Er, Yb; And the Tm that adulterated
+ 3zrF
4-BaF
2-LaF
3-AlF
3-NaF-BPF
2.
Anti-Stokes phosphor material can be to comprise that such as utilization any suitable mode that slurry with the phosphor of Powdered or other particle form of solvent or suspension media combination forms the film of phosphor is deposited in the particular substrate or surface of specific features, then evaporate or otherwise remove solution or suspension media, to generate the skin covering of the surface of phosphor.
Can also deposit anti-Stokes phosphor with electrophoretic deposition, silk screen printing, sputter, chemical vapour deposition (CVD) or any other suitable deposition technique.One or more anti-Stokes phosphors usefully can be adopted together with one or more traditional phosphors and one or more LED.Anti-Stokes phosphor and conventional phosphors can be used as mixture, with the particular surface of coating (coat) microelectronic device assemblies, or phosphor can be used with layer.This phosphor can also be represented as to be had or in support or reinforcement material or structure, to form self-supporting phosphor layer in microelectronic device assemblies or the phosphor layer of support.
The position of phosphor, thickness, density and composition can change, to realize the output of required optics, and the cooling characteristics of the generation that the light that provides by this phosphor is provided simultaneously to heat radiation.Can also change the specific distribution of phosphor, making only has some microelectronic component, or its one or more active parts do not interact with the phosphor existing or with some or all of the phosphor existing.Can be by the combination application together with phosphor such as jointing material, light-scattering body, transmittance structure, to produce required spectrum output.
In one embodiment of the invention, heat-dissipating structure in microelectronic component can comprise LED, for example,, by GaN or other III-V nitride or by producing heat or accumulating passively in the operating period of microelectronic component the LED that parts that the other materials of unwanted heat forms or structure are manufactured.
Therefore, the present invention has imagined a kind of microelectronic component, it produces heat in the operation of device, and the present invention also imagined a kind of up-conversion, and it is arranged to and reduces the heat energy of device and/or the light that produces visible spectrum hot in the situation that for be exposed to this at up-conversion.Microelectronic component can comprise the device architecture that light-emitting diode or laser diode or other are suitable.
Microelectronic component of the present invention can be constructed to comprise a plurality of up-conversions, and described a plurality of up-conversions comprise: the first up-conversion, its in response to heat energy to produce the light through upper conversion; And second up-conversion, it,, in response to heat, from the light through upper conversion in the first up-conversion or other sources and/or from the energy of the active area of microelectronic component, produces the light through upper conversion.
Alternatively, microelectronic component can be following device, it produces heat in operation, or comprise and produce hot parts, wherein, described device comprises up-conversion, and described up-conversion produces the light through upper conversion in response to heat, external light source and/or from the energy of the active area of microelectronic component.
More generally, described device can be following device, and it produces heat in operation, or comprises the parts that generation is hot, and wherein, described device comprises hot transfer medium, and described hot transfer medium is converted to heat to the effective light transmitting of dispelling the heat.
This device can also comprise lower transition material, wherein, and the energy that the second up-conversion response is produced by lower transition material.
As another structure, microelectronic component can manufacture and comprise up-conversion and lower transition material, and each in up-conversion and lower transition material is all arranged in the interaction of carrying out energy in device.In specific a layout, up-conversion produces the light through upper conversion in response to the energy being produced by lower transition material.Up-conversion can comprise anti-Stokes phosphor or other suitable up-conversions, and lower transition material can comprise that Stokes phosphor or other have the lower transition material of appropriate characteristics.
Can construct this microelectronic component, make the lower switching energy producing in the operation of device on heat energy, to be converted to luminous energy.As another distortion, can arrange lower transition material, make it in response to the energy of launching from microelectronic component active area, to produce the light through lower conversion.As further distortion, can construct microelectronic component, make by suitable selection material, in the operation of microelectronic component, be created in visible spectrum through on conversion light and through under conversion light.As another distortion, can for example, to up-conversion (, anti-Stokes phosphor), arrange, make it in response to the energy of launching from the active area of microelectronic component and heat energy, to produce the light through upper conversion.
In another embodiment, can utilize the composite material that comprises anti-Stokes phosphor and Stokes phosphor to construct microelectronic component.
Microelectronic component of the present invention in another embodiment can comprise a plurality of upper conversions and/or lower conversion element, and it is in response to the energy of being launched by any light-emitting zone of microelectronic component, to produce the predetermined light output spectrum for this microelectronic component.
Therefore, it is feasible that the present invention makes produce the method that hot microelectronic component carries out heat management in the operation of device, described method comprises by heat energy and up-conversion being interacted to reduce the heat energy of device, and/or in the situation that up-conversion is exposed to produced by this device hot, produce the light in visible spectrum.
In one embodiment, the method that microelectronic component is carried out to heat management comprises up-conversion is attached in this device, and described up-conversion produces the light through upper conversion in response to heat, external light source and/or from the energy of the active area of microelectronic component.
The heat management of microelectronic component can be included in a plurality of up-conversions of wherein combination, and described a plurality of up-conversions comprise: the first up-conversion, its in response to heat energy to produce the light through upper conversion; And second up-conversion, it is in response to heat energy, produce the light through upper conversion through the light of upper conversion and/or from the energy of the active area of microelectronic component.
In addition, lower transition material can be attached in microelectronic component, and the second up-conversion responds the energy being produced by lower transition material.
As the other method of the heat management of microelectronic component, up-conversion and lower transition material can all be combined in device, and each in described up-conversion and lower transition material is all arranged to the interaction for energy in this device.In the method, up-conversion can produce the light through upper conversion in response to the energy being produced by lower transition material.Up-conversion can comprise anti-Stokes phosphor and other suitable material and media, and lower transition material can comprise Stokes phosphor or there is suitably lower transfer characteristic can alternative material.
The heat management of microelectronic component and/or operational administrative can comprise the lower switching energy that use produces in the operation of device, being converted to luminous energy on heat energy.Alternatively, or in addition, lower transition material can be in response to the energy of launching from the active area of microelectronic component, to produce the light through lower conversion, and in a particular embodiment, in the operation of microelectronic component, can be created in visible spectrum through on conversion light and through under conversion light.
The present invention has also imagined a kind of method of manufacturing microelectronic component in its a embodiment, be included in described microelectronic component in conjunction with a plurality of upper conversion elements and/or lower conversion element, described a plurality of upper conversion element and/or lower conversion element are in response to the energy of being launched by any light-emitting zone of microelectronic component, to produce the predetermined light output spectrum for microelectronic component.
Therefore, should understand can be to provide the multiple specific arrangements of required heat management and/or luminous power to manufacture microelectronic component of the present invention.
Now, with reference to accompanying drawing 1-4, specific embodiment of the present invention is described.
With reference now to accompanying drawing,, Fig. 1 is the partial elevation view of photoelectron luminescence component 10, described photoelectron luminescence component 10 comprises light-emitting diode 12 and is arranged to accept the lower conversion luminescence medium 20 from the primary radiation of light-emitting diode, wherein, photoelectron luminescence component is included in the anti-Stokes phosphor film 24 on the side surface of diode support 22.Lower conversion luminescence medium 20 in this assembly is constituted as the film on the inner surface of the lid 18 on LED 12.
Shown LED assembly can reverberation, there to be the output light of direction ground directing assembly, and LED supports the 22 anti-Stokes phosphors that can have on the side surface of vertical column construction and deposit on the base portion of this support, to maximize the cooling effect of being realized by anti-Stokes phosphor material.
In operation, the heat being produced by LED and associated components is transmitted to anti-Stokes phosphor film 24 by supporting 22, and it is light transmitting by the thermal power transfer of input, realizes thus cooling to LED assembly.The additional cooling of LED can be realized by using with the cold sink of the back of the body Surface Contact of lamp assembly, thermoelectric (al) cooler etc.
Fig. 2 is the cross-sectional elevational view of photoelectron luminescence component 30 according to another embodiment of the present invention, and it comprises first time conversion luminescence medium, second time conversion luminescence medium and anti-Stokes phosphor film.
The second down-conversion luminescent material 34 is in this embodiment provided as the coating on transparent lens 35, and described transparent lens 35 meshes matchingly with main body 46, to surround internal volume 43.Alternatively, this second down-conversion luminescent material can be provided as self-supporting film, for example, by suitable basis material, is strengthened, or is otherwise supported in other structures of photoelectron luminescence component.
Fig. 3 is partial cross section's front view of opto-electronic device according to another embodiment of the present invention.As directed, in this device, 54 places, the back side of the light-emitting diode on support/electric conductor 52 support light-emitting diode 50, and arrange that the second electric conductor 56 contacts with the surface of emission 60 with this LED.
In this embodiment, the external film of anti-Stokes phosphor (circumscribing film) 62 has been formed on the side surface of LED 50, make the heat producing in LED body be transmitted to anti-Stokes phosphor film 62, and be converted into the light of launching from anti-Stokes phosphor film.By this kind of layout, by the thermolysis of anti-Stokes phosphor film, LED tube core (LED die) is carried out to heat management, for operating under predetermined temperature.
In another embodiment of the present invention, anti-Stokes phosphor can with such as being arranged to tradition (Stokes) phosphor in combination receiving from the primary radiation composite quilt coating of LED or other primary radiation source, use.In high energy operation, itself can produce traditional phosphor excessive enthalpy and overheat, and therefore this heat in phosphor film can distribute by the anti-Stokes phosphor parts of this composite membrane.Can the distributed carrier to suitable formation film for the specific phosphors of this object, to form corresponding coating component.
Fig. 4 is the perspective view of compound phosphor particles 80, it comprises elementary lower converting phosphor phosphor bodies 82, described elementary lower converting phosphor phosphor bodies 82 has the discontinuous film region 84 of anti-Stokes phosphor deposited thereon, for example, making it be suitable for the heat of resistance in phosphor film in application-specific increases.The in the situation that of this compound anti-Stokes phosphor/Stokes phosphor particles, in mutually mixing, can adopt corresponding anti-Stokes and Stokes phosphor to be used as the discrete particle of every type.The conventional deposition of use such as chemical vapour deposition (CVD), anti-Stokes phosphor and conventional phosphors can also be deposited as film.
On the other hand, the present invention has imagined a kind of LED structure, and for example, LED module, wherein, removes anti-Stokes phosphor from LED.For example, anti-Stokes phosphor can arrange with side by side relationship with LED, or LED can with LED parts physically (physically) separated.
Fig. 5 has the graphical representation of exemplary that the LED module of LED is installed on surface, and the adjacent layer of the anti-Stokes phosphor of described surface installation LED from substrate makes progress or be outwardly.As shown, LED module 100 comprises substrate 102, on described substrate 102 LED 104 stretch out (shown in view for upwards), surpass outside the layer 106 of anti-Stokes phosphor material (shown in view above).
Fig. 6 is the indicative icon with the LED module 110 of the LED parts 114 on substrate 112, wherein, has the layer 116 of anti-Stokes phosphor on described substrate.
In this type of LED module that comprises the anti-Stokes phosphor elements of LED/, module can comprise one or more LED, and LED can be identical or different type.For example, all LED can be the LED emitting white light.Alternatively, LED can the vicissitudinous light color of tool.The structure of LED or substrate are installed on it can suitably be selected or be configured to that the LED from this layout is launched to heat and conduct and disperse.
Fig. 7 is the anti-Stokes phosphor of a kind of LED/ assembly 120, and wherein, LED 124 and anti-Stokes phosphor layer 126 are arranged on substrate 122.Assembly comprises external reflector 128 and lens, filter or diffuser 130.As shown in Figure 5, each in LED 124 extends up to the surperficial upper end of anti-Stokes phosphor layer from substrate.
In the layout as shown in Fig. 5-7, anti-Stokes phosphor is positioned, make it not affect the electrical characteristics of device.For example, if phosphor layer conduction, the circuit trace (trace) not placing it in module is upper, or can it is separated with dielectric layer, with the operation of guaranteeing that module is suitable.
Therefore, what should understand the present invention's imagination is multiple different microelectronic component structure and layout, wherein, uses up-conversion luminescence medium, and take useless thermal power transfer is light output, and distributes thus the heat in the operation of microelectronic component.
Although at this, mainly aspect the heat management of microelectronic component, present invention is described, but it should be understood that, the present invention can be applied to the microelectronic component such as the cooling of the non-optical device of heat sensor and use special light source parts, wherein, by the heat by generation according to the present invention, be converted to the ability of light, can minimize existing light source part, or even can be eliminated.
Although described the present invention with reference to particular aspects of the present invention, feature and exemplary embodiment at this, but should be appreciated that, effect of the present invention is not limited to this, but based on content disclosed herein, recognize as those skilled in the art of the present invention, can expand and comprise that various other change, revise and embodiment that can alternative.Therefore, within the spirit and scope of the present invention, as desired the present invention is hereinafter intended to be understood and interpreted to widely the embodiment that comprises that all these change, revise and can alternative.
The cross reference of related application
At this, require the U.S. Patent application No.11/832 submitting on August 2nd, 2007 under the regulation of 35 USC 120,785 priority.
Claims (58)
1. a photoelectron subassembly that comprises opto-electronic device, described opto-electronic device comprises in light-emitting diode and laser diode, wherein said opto-electronic device comprises generation visible ray and produces hot light generating device, and up-conversion luminescent material, described up-conversion luminescent material is in the situation that be exposed to hot that described opto-electronic device produces, responsively described heat is converted to the visible ray through upper conversion, the heat being produced by described opto-electronic device is dispelled the heat by described heat being converted to the described visible ray through upper conversion of the VISIBLE LIGHT EMISSION of described generation thus.
2. photoelectron subassembly according to claim 1, wherein,
Described up-conversion luminescent material comprises anti-Stokes phosphor.
3. photoelectron subassembly according to claim 2, wherein,
Described up-conversion luminescent material comprises: the material of formula L:M,
Wherein, L is yittrium oxide, yttrium fluoride, fluorine yittrium oxide, oxychloride yttrium, oxygen yttrium sulfide or ytterbium oxychloride, and M is one or more in ytterbium, erbium and thulium.
4. photoelectron subassembly according to claim 2, wherein,
Described up-conversion luminescent material comprises: from by Y
2o
2s:Yb, Tm; La
2o
2s:Er, Yb; Y
2o
2s:Er, Yb; YF
3: Er, Yb; Y
2o
3-YOF:Er, Yb; YOCl:Er, Yb; And the material of selecting in the group of YbOCl:Er composition.
5. photoelectron subassembly according to claim 1, wherein,
Described up-conversion luminescent material is arranged to be transmitted and received the heat from described opto-electronic device by conduction-type heat.
6. photoelectron subassembly according to claim 1, wherein,
Described up-conversion luminescent material is arranged to be transmitted and received the heat from described opto-electronic device by radiant type heat.
7. photoelectron subassembly according to claim 1, wherein,
Described opto-electronic device comprises light-emitting diode.
8. photoelectron subassembly according to claim 7, wherein,
Described light-emitting diode is formed by IIl-V nitride material.
9. photoelectron subassembly according to claim 8, wherein said opto-electronic device comprises:
Down-conversion luminescent material, described down-conversion luminescent material is arranged to the primary radiation receiving from described light-emitting diode, and for responsively utilizing emitted light output.
10. photoelectron subassembly according to claim 1, wherein,
Described light generating device comprises described down-conversion luminescent material.
11. photoelectron subassemblies according to claim 1, wherein,
Described up-conversion luminescent material is present in the layer that contains this up-conversion luminescent material at least a portion that is overlayed on described photoelectron subassembly.
12. photoelectron subassemblies according to claim 1, wherein,
Described up-conversion luminescent material is present in the layer that contains this up-conversion luminescent material at least a portion that is overlayed on described opto-electronic device.
13. 1 kinds of photoelectron subassemblies that comprise opto-electronic device, described opto-electronic device comprises in light-emitting diode and laser diode, wherein said opto-electronic device produces heat energy in producing visible ray, and up-conversion, during described up-conversion is arranged to and reduces the heat energy of described opto-electronic device and/or produce visible spectrum in the situation that described up-conversion is exposed to described heat energy through on the light of conversion, wherein saidly together with the light of upper conversion and the visible ray of described generation, launch.
14. photoelectron subassemblies according to claim 13, comprise a plurality of up-conversions,
Described a plurality of up-conversion, comprising:
The first up-conversion, described the first up-conversion, in response to heat energy, produces the first light through upper conversion; And
The second up-conversion, described the second up-conversion is in response to heat energy, the described first light through upper conversion and/or from the energy of the active area of described opto-electronic device, generation is through the light of upper conversion, and the active area of wherein said opto-electronic device produces described visible ray.
15. photoelectron subassemblies according to claim 14, also comprise:
Lower transition material, wherein, described the second up-conversion is in response to the second light through upper conversion described in the power generation being produced by described lower transition material.
16. 1 kinds of photoelectron subassemblies that comprise opto-electronic device, described opto-electronic device comprises in light-emitting diode and laser diode, wherein said opto-electronic device produces light and heat energy, up-conversion and lower transition material, described up-conversion be configured to heat energy that conversion producing in described opto-electronic device is producing light so that described up-conversion produce with the photoemissive warp producing on the light changed, wherein said lower transition material is in response to the light quantity of launching from the active area of described opto-electronic device, to produce the light through lower conversion.
17. photoelectron subassemblies according to claim 16, wherein,
Described up-conversion produces the light through upper conversion in response to the energy being produced by described lower transition material.
18. photoelectron subassemblies according to claim 16, wherein,
Described up-conversion comprises: anti-Stokes phosphor, and
Described lower transition material comprises: Stokes phosphor.
19. photoelectron subassemblies according to claim 17, wherein,
In the operation of described photoelectron subassembly, be created in the light through upper conversion in visible spectrum and through the light of lower conversion.
20. photoelectron subassemblies according to claim 13, comprise: a plurality of upper conversions and, or lower conversion element, described a plurality of upper conversion and/or lower conversion element are in response to the energy of launching in any light-emitting zone by described opto-electronic device, to produce the predetermined light output spectrum for described photoelectron subassembly.
21. 1 kinds to producing the method that hot opto-electronic device carries out heat management in producing light, and described opto-electronic device comprises in light-emitting diode and laser diode, and wherein said opto-electronic device produces heat in producing visible ray, comprising:
Utilize up-conversion luminescent material to absorb described heat, described up-conversion luminescent material is in the situation that being exposed to described heat, responsively described heat is converted to the output of the light through upper conversion with the VISIBLE LIGHT EMISSION of described generation, to carry out cooling described device and to dispel the heat by the described output of the light through upper conversion thus.
22. methods according to claim 21, wherein,
Described up-conversion luminescent material comprises: anti-Stokes phosphor.
23. methods according to claim 21, wherein,
Described up-conversion luminescent material comprises: the material of formula L:M,
Wherein, L is yittrium oxide, yttrium fluoride, fluorine yittrium oxide, oxychloride yttrium, oxygen yttrium sulfide or ytterbium oxychloride, and M is one or more in ytterbium, erbium and thulium.
24. methods according to claim 21, wherein,
Described up-conversion luminescent material comprises: from Y
2o
2s:Yb, Tm; La
2o
2s:Er, Yb; Y
2o
2s:Er, Yb; YF
3: Er, Yb; Y
2o
3-YOF:Er, Yb; YOCl:Er, Yb; And the material of selecting in the group of YbOCl:Er composition.
25. methods according to claim 21, wherein,
Described up-conversion luminescent material is arranged to transmit or transmit by radiant type heat by conduction-type heat the heat receiving from described opto-electronic device input.
26. methods according to claim 21, wherein,
Described opto-electronic device comprises light-emitting diode and down-conversion luminescent material, and described down-conversion luminescent material is arranged to the primary radiation receiving from described light-emitting diode, and responsively utilizing emitted light output.
27. methods according to claim 26, wherein,
Described heat produces in described down-conversion luminescent material.
28. 1 kinds of methods of opto-electronic device being carried out to heat management, described opto-electronic device comprises in light-emitting diode and laser diode, and wherein said opto-electronic device is at generation heat in service and the visible ray of described opto-electronic device, and the method comprises:
By the interaction with up-conversion, reduce the heat energy of described opto-electronic device, with in the situation that described up-conversion is exposed to hot that described opto-electronic device produces, produce in visible spectrum through the light of upper conversion, wherein saidly together with the light of upper conversion and the visible ray of described generation, launch.
29. methods according to claim 28, comprising: therein in conjunction with a plurality of up-conversions, described a plurality of up-conversions comprise:
The first up-conversion, described the first up-conversion is in response to heat energy, to produce the light through upper conversion; And
The second up-conversion, described the second up-conversion produces the light through upper conversion in response to heat energy, the described light through upper conversion and/or from the energy of the active area of described opto-electronic device.
30. methods according to claim 29, also comprise:
Transition material under combination in described opto-electronic device, wherein, the energy that described the second up-conversion response is produced by described lower transition material.
31. 1 kinds of manufactures comprise the method for the photoelectron subassembly of in light-emitting diode and laser diode, comprising:
In described photoelectron subassembly in conjunction with on a plurality of conversion and/or lower conversion element, described a plurality of upper conversion and/or lower conversion element are in response to the energy of being launched by any light-emitting zone of described opto-electronic device, using and produce the visible ray output as the part of the predetermined light output spectrum for described photoelectron subassembly, wherein said a plurality of upper conversion and/or lower conversion element comprise conversion element at least one, it is configured to the thermal power transfer being produced by described opto-electronic device is that the visible ray that heat is distributed is exported, the output of visible ray that described heat is distributed export with the described visible ray of the described opto-electronic device of the part of predetermined light output spectrum as for described opto-electronic device together with radiation.
32. 1 kinds of photoelectron subassemblies that comprise in light-emitting diode and laser diode, described photoelectron subassembly produces in operation light and heat or comprises the parts that produce visible light and heat, described photoelectron subassembly comprises hot transfer medium, described hot transfer medium comprises transmitting transition material, described transmitting transition material is converted to described heat to have than more short wavelength's the light through upper conversion transmitting of described thermal radiation, launches together with the visible ray of wherein said light transmitting and described generation.
33. photoelectron subassemblies according to claim 32, wherein,
The described transmitting of the light through upper conversion is cooling described photoelectron subassembly effectively.
34. photoelectron subassemblies according to claim 32, wherein,
With respect to the corresponding photoelectron subassembly that lacks described hot transfer medium, the described transmitting of the light through upper conversion is cooled to higher degree by described photoelectron subassembly effectively, wherein, in the described corresponding photoelectron subassembly that lacks described hot transfer medium, utilize radiation and cooling heat radiation of conduction of described photoelectron subassembly.
35. photoelectron subassemblies according to claim 32, wherein,
By conduction or radiation at least one, heat from described photoelectron subassembly or its parts, be delivered to described hot transfer medium.
36. photoelectron subassemblies according to claim 32, wherein,
Described hot transfer medium comprises a plurality of phosphor materials, and described a plurality of phosphor materials comprise anti-Stokes phosphor.
37. photoelectron subassemblies according to claim 32, wherein,
The described parts that produce heat comprise at least one in down-conversion luminescent material and light-emitting diode.
38. photoelectron subassemblies according to claim 32, wherein, described hot transfer medium comprises a plurality of up-conversions, described a plurality of up-conversions comprise:
The first up-conversion, described the first up-conversion in response to described heat to produce the light through upper conversion; And
The second up-conversion, described the second up-conversion is in response to described heat, produce the light through upper conversion from the described light through upper conversion of described the first up-conversion and/or from the energy of the active area of in described light-emitting diode and laser diode.
39. photoelectron subassemblies according to claim 32, comprising:
Up-conversion and lower transition material, each in described up-conversion and described lower transition material is arranged in the interaction of carrying out energy in described photoelectron subassembly.
40. photoelectron subassemblies according to claim 36, wherein,
Described transmitting transition material carries out upper conversion by the energy from phosphor.
41. photoelectron subassemblies according to claim 36, comprising:
Luminescence medium, the energy of described luminescence medium self-luminous diode in future or phosphor carries out lower conversion.
42. 1 kinds of photoelectron subassemblies that comprise in light-emitting diode and laser diode, described photoelectron subassembly produces in operation heat and visible ray or comprises the parts that produce heat and visible ray, described photoelectron subassembly comprises hot transfer medium, described hot transfer medium is converted to described heat the light transmitting of effectively distributing described heat, and wherein said light is launched radiation together with produced described visible ray.
43. 1 kinds of photoelectron subassemblies that comprise in light-emitting diode and laser diode, described photoelectron subassembly produces in operation visible light and heat or comprises the parts that produce visible light and heat, wherein, described photoelectron subassembly comprises up-conversion, and described up-conversion is in response to heat, external light source and/or produce the light through upper conversion from the energy of the active area of in described light-emitting diode and laser diode.
44. photoelectron subassemblies according to claim 2, wherein,
Described opto-electronic device comprises described light-emitting diode, and from described light-emitting diode, removes described anti-Stokes phosphor.
45. according to the photoelectron subassembly described in claim 44, wherein,
Described light-emitting diode and anti-Stokes phosphor are in mutual relation side by side.
46. according to the photoelectron subassembly described in claim 44, wherein,
Described light-emitting diode and anti-Stokes phosphor are separated from each other physically.
47. photoelectron subassemblies according to claim 2, wherein,
Described opto-electronic device comprises light-emitting diode, and described light-emitting diode and described anti-Stokes phosphor are on substrate, wherein said anti-Stokes phosphor is in a layer on described substrate, and described light-emitting diode extends outwardly into the layer that surpasses described anti-Stokes phosphor from described substrate.
48. photoelectron subassemblies according to claim 2, wherein,
Described opto-electronic device comprises light-emitting diode, and described light-emitting diode and described anti-Stokes phosphor are on substrate, wherein said anti-Stokes phosphor is in a layer on described substrate, and described light-emitting diode comprises the LED parts with the layer physical separation of described anti-Stokes phosphor.
49. photoelectron subassemblies according to claim 2, wherein,
Described opto-electronic device comprises a plurality of light-emitting diodes.
50. according to the photoelectron subassembly described in claim 49, wherein,
Each in described a plurality of light-emitting diode launched identical color.
51. according to the photoelectron subassembly described in claim 50, wherein,
Each in described a plurality of light-emitting diode comprises white light emitting diode.
52. according to the photoelectron subassembly described in claim 50, wherein,
Described a plurality of light-emitting diode comprises the light-emitting diode of launching different colours.
53. photoelectron subassemblies according to claim 2, also comprise:
At least one element of selecting the group forming from reflector, lens, filter and diffuse component.
54. photoelectron subassemblies according to claim 2, wherein said opto-electronic device comprises light-emitting diode, also comprises: the reflector and the lens that for the light to from described light-emitting diode transmitting, guide.
55. according to the photoelectron subassembly described in claim 54, wherein, described light-emitting diode and anti-Stokes phosphor are on substrate, in the layer of wherein said anti-Stokes phosphor on described substrate, and described light-emitting diode stretches out from described substrate, surpass the layer of described anti-Stokes phosphor.
56. according to the photoelectron subassembly described in claim 55, comprising: a plurality of light-emitting diodes.
57. photoelectron subassemblies according to claim 2, wherein,
Described opto-electronic device comprises: light-emitting diode, and described light-emitting diode and described anti-Stokes phosphor are separated from each other by dielectric layer.
58. 1 kinds of methods of photoelectron subassembly being carried out to heat management, described photoelectron subassembly comprises in light-emitting diode and laser diode, comprising:
Therein in conjunction with up-conversion, described up-conversion produces the light through upper conversion in response to heat, external light source and/or from the energy of the active area of described opto-electronic device, and wherein said up-conversion comprises anti-Stokes phosphor.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/832,785 | 2007-08-02 | ||
| US11/832,785 US8297061B2 (en) | 2007-08-02 | 2007-08-02 | Optoelectronic device with upconverting luminophoric medium |
| PCT/US2008/072042 WO2009018558A2 (en) | 2007-08-02 | 2008-08-02 | Optoelectronic device with upconverting luminophoric medium |
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| Publication Number | Publication Date |
|---|---|
| CN101790800A CN101790800A (en) | 2010-07-28 |
| CN101790800B true CN101790800B (en) | 2014-01-22 |
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| CN200880101599.0A Active CN101790800B (en) | 2007-08-02 | 2008-08-02 | Optoelectronic device with upconverting luminophoric medium |
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| US (2) | US8297061B2 (en) |
| EP (1) | EP2176893B1 (en) |
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Also Published As
| Publication number | Publication date |
|---|---|
| US20130049011A1 (en) | 2013-02-28 |
| US8297061B2 (en) | 2012-10-30 |
| CN101790800A (en) | 2010-07-28 |
| US20090034201A1 (en) | 2009-02-05 |
| WO2009018558A9 (en) | 2009-03-26 |
| JP5453262B2 (en) | 2014-03-26 |
| WO2009018558A3 (en) | 2009-05-07 |
| WO2009018558A2 (en) | 2009-02-05 |
| KR20100039387A (en) | 2010-04-15 |
| EP2176893B1 (en) | 2016-01-27 |
| EP2176893A2 (en) | 2010-04-21 |
| EP2176893A4 (en) | 2010-12-22 |
| KR101521312B1 (en) | 2015-05-18 |
| JP2010535421A (en) | 2010-11-18 |
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Effective date of registration: 20210610 Address after: California, USA Patentee after: Kerui led Co. Address before: North Carolina, USA Patentee before: Klee |