CN102053180A - Method for reinforcing lateral rigidity of hanging nanotube device through electron beam induced metal deposition - Google Patents
Method for reinforcing lateral rigidity of hanging nanotube device through electron beam induced metal deposition Download PDFInfo
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- CN102053180A CN102053180A CN2010105634109A CN201010563410A CN102053180A CN 102053180 A CN102053180 A CN 102053180A CN 2010105634109 A CN2010105634109 A CN 2010105634109A CN 201010563410 A CN201010563410 A CN 201010563410A CN 102053180 A CN102053180 A CN 102053180A
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Abstract
The invention relates to a method for reinforcing the lateral rigidity of a hanging nanotube device through electron beam induced metal deposition, belonging to the technical field of nanotube devices. The method comprises the following steps of: placing a hanging nanotube device to be subjected to rigidity optimization on a sample table of focusing electron beam equipment; carrying out appearance observation on the nanotube device through an electron beam imaging system, and regulating the work distance of the focusing electron beam equipment; heating a metal organic compound to a gaseous state, and leading the gaseous metal organic compound to flow through the hanging nanotube device; then, starting the focusing electron beam generator of the focusing electron beam equipment, and carrying out electron beam scanning irradiation on the nanotube device partially or wholly; decomposing the gaseous metal compound under the irradiation bombardment of electron beams in an appointed irradiation area for the electron beams so as to deposite metal precipitates on a nanotube irradiated by the electron beams; and stopping the irradiation of the electron beams after an expected deposition parameter is reached, closing a valve for the gaseous metal organic compound, and stopping heating the gaseous metal organic compound. The method provided by the invention is stable and reliable, can realize transverse rigidity control on different characteristic structures for the hanging nanotube device, and has the advantages of high positioning precision and good flexibility.
Description
Technical field
The present invention relates to the method that a kind of electron beam-induced metal deposition strengthens the suspended nanometer tube device lateral stiffness, this method can be used for the scanning probe microscopy carbon nanotube probes in pattern detection, nanoprocessing, and fields such as nanometer tube device are launched in the field.
Background technology
The scanning probe microscopy carbon nanotube probes is the end that nanotube is fixed on common probe, and nanotube is carried out work as probe.Carbon nanotube probes has shown the not available premium properties of many common probes, as higher resolution, wearing quality and good pliability etc.Because length-diameter ratio is big, it is the desirable probe that characterizes precipitous sample that nanotube probe is supposed to.Yet because carbon nano-tube is elongated, the transverse elasticity coefficient of nanotube probe is little, causes it when big depth-to-width ratio sample being carried out the pattern sign, is easy to the generation bending-buckling because lateral stiffness is little, make the image of acquisition deposit living illusion, its big L/D ratio advantage is not fully played.
Coarse precipitous sample for the scanning of a surface big rise and fall, need carbon nanotube probes to have the advantage of certain length to guarantee that its length-diameter ratio is big, reduce the broadening effect of probe, and need to improve the diameter of nanotube simultaneously to improve its elasticity coefficient and stability.The diameter increase certainly will influence probe resolution, so for characterizing shaggy sample surfaces, the nanotube probe of end diameter refinement is desirable the selection.And the big nanotube probe preparation research of big L/D ratio and lateral stiffness is still a still unsolved manufacturing difficult problem both at home and abroad.
Summary of the invention
The objective of the invention is to, provide a kind of electron beam-induced metal deposition to strengthen the method for suspended nanometer tube device lateral stiffness.The regulate and control method that the present invention proposes can significantly improve the usability of suspended nanometer tube devices such as nanotube probe.
A kind of electron beam-induced metal deposition strengthens the method for suspended nanometer tube device lateral stiffness, comprises the following steps:
1) will need the suspended nanometer tube device of rigidity optimization to place on the focused beam equipment sample platform;
2) by the electron beam patterning system nanometer tube device is carried out pattern observation, adjust the operating distance of focused electron beam device;
3) the heating of metal organic compound makes it become gaseous state, and makes the metal organic compound gas stream cross suspended nanometer tube device;
4) open the focused electron beam generator of focused electron beam device then, to the local of nanometer tube device or all carry out the electron beam scanning irradiation;
5) specify irradiation area at electron beam, under the irradiation bombardment of electron beam, metal compound gas is decomposed, and metal deposit deposits on the nanotube that is subjected to the electron beam irradiation;
6) reach the expection deposition parameter after, stop electron beam irradiation, close the metal organic compound gas valve, and stop its heating.
As preferred implementation, described metal organic compound is for becoming the metal organic compound of tungsten, gold, aluminium and the platinum of gaseous state after heating; Can utilize electron beam to shine the zone of all nanotubes, metal deposit is all wrapped up nanotube, also can shine local nanometer tube device, guarantee that the unsettled end of nanotube is not deposited by metal electron beam; Also can shine local nanometer tube device, guarantee that the unsettled end of nanotube is not deposited by metal, near nanotube and the fixing position increase electron beam scanning irradiation time of substrate, realize more metals depositions simultaneously electron beam.
The method that the present invention proposes is reliable and stable, can realize the lateral stiffness control of different characteristic structure to suspended nanometer tube device, and bearing accuracy height, dirigibility are good.
Description of drawings
Fig. 1 electron beam-induced metal deposition strengthens the ultimate principle figure of the method for suspended nanometer tube device lateral stiffness, wherein, (a) optimizes preceding nanometer tube device for rigidity; (b) be nanometer tube device rigidity prioritization scheme 1; (c) be nanometer tube device rigidity prioritization scheme 2; (d) nanometer tube device rigidity prioritization scheme 3.
Embodiment
Below the present invention is further described.
1) suspended nanometer tube device (as various material nano pipes such as carbon nano-tube, nano-tubes) that will need rigidity to optimize places on the focused beam equipment sample platform, the suspended nanometer tube device here refers to the fixedly unsettled nanometer tube device of the other end of an end, as scanning probe microscopy nanotube probe, nanotube field ballistic device etc.;
2) by the electron beam patterning system nanometer tube device is carried out pattern observation, adjust the focused beam operating distance;
3) heating of metal compound, as the metal organic compound of tungsten, gold, aluminium and platinum etc.: Wu (CO) 6, C7H7F602Au, (CH3) 3Al, C7H7Pt makes it become gaseous state.And make metal compound gas flow through suspended nanometer tube device;
4) open the focused electron beam generator then, select suitable beam energy (1～30Kv accelerating potential), an end suspended nanometer tube device is carried out the electron beam scanning irradiation at assigned address;
5) specify irradiation area at electron beam, under the irradiation bombardment of electron beam, metal compound gas is decomposed, and metal deposit deposits on the nanotube that is subjected to the electron beam irradiation;
Nanometer tube device rigidity prioritization scheme 1: electron beam shines the zone of all nanotubes, and metal deposit all wraps up nanotube;
Nanometer tube device rigidity prioritization scheme 2: electron beam shines local nanotube region, guarantees that the unsettled end of nanotube is not deposited by metal;
Nanometer tube device rigidity prioritization scheme 3: electron beam shines local nanotube region, guarantees that the unsettled end of nanotube is not deposited by metal, near nanotube and the fixing position increase electron beam scanning irradiation time of substrate, realizes more metal depositions simultaneously;
6) reach the expection deposition parameter after, stop electron beam irradiation, close the metal compound gas valve, and stop its heating.
Claims (5)
1. the method for an electron beam-induced metal deposition enhancing suspended nanometer tube device lateral stiffness comprises the following steps:
1) will need the suspended nanometer tube device of rigidity optimization to place on the focused beam equipment sample platform;
2) by the electron beam patterning system nanometer tube device is carried out pattern observation, adjust the operating distance of focused electron beam device;
3) the heating of metal organic compound makes it become gaseous state, and makes the metal organic compound gas stream cross suspended nanometer tube device;
4) open the focused electron beam generator of focused electron beam device then, to the local of nanometer tube device or all carry out the electron beam scanning irradiation;
5) specify irradiation area at electron beam, under the irradiation bombardment of electron beam, metal compound gas is decomposed, and metal deposit deposits on the nanotube that is subjected to the electron beam irradiation;
6) reach the expection deposition parameter after, stop electron beam irradiation, close the metal organic compound gas valve, and stop its heating.
2. electron beam-induced metal deposition according to claim 1 strengthens the method for unsettled carbon nano tube device lateral stiffness, it is characterized in that, described metal organic compound is for becoming the metal organic compound of tungsten, gold, aluminium and the platinum of gaseous state after heating.
3. electron beam-induced metal deposition according to claim 1 strengthens the method for unsettled carbon nano tube device lateral stiffness, it is characterized in that, utilizes electron beam to shine the zone of all nanotubes, and metal deposit is all wrapped up nanotube.
4. electron beam-induced metal deposition according to claim 1 strengthens the method for unsettled carbon nano tube device lateral stiffness, it is characterized in that, electron beam is shone local nanometer tube device, guarantees that the unsettled end of nanotube is not deposited by metal;
5. electron beam-induced metal deposition according to claim 1 strengthens the method for unsettled carbon nano tube device lateral stiffness, it is characterized in that, electron beam is shone local nanometer tube device, guarantee that the unsettled end of nanotube is not deposited by metal, near nanotube and the fixing position increase electron beam scanning irradiation time of substrate, realize more metals depositions simultaneously.
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| CN 201010563410 CN102053180B (en) | 2010-11-26 | 2010-11-26 | Method for reinforcing lateral rigidity of hanging nanotube device through electron beam induced metal deposition |
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| CN 201010563410 CN102053180B (en) | 2010-11-26 | 2010-11-26 | Method for reinforcing lateral rigidity of hanging nanotube device through electron beam induced metal deposition |
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Cited By (5)
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| CN103100726A (en) * | 2013-02-01 | 2013-05-15 | 东南大学 | Preparing method for alkali metal simple substance nanometer materials |
| CN103498133A (en) * | 2013-09-23 | 2014-01-08 | 华东理工大学 | Method for preparing SiCx nanometer material in transmission electron microscope through electron beam induced liquid phase deposition |
| CN103693634A (en) * | 2013-12-08 | 2014-04-02 | 北京工业大学 | Method for preparing carbon nano tube through electron beam induced deposition |
| CN104555911A (en) * | 2015-01-20 | 2015-04-29 | 东南大学 | Method for manufacturing nanowire |
| CN109231162A (en) * | 2018-09-07 | 2019-01-18 | 厦门大学 | A kind of method of seamless welding carbon nanotube |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103100726A (en) * | 2013-02-01 | 2013-05-15 | 东南大学 | Preparing method for alkali metal simple substance nanometer materials |
| CN103498133A (en) * | 2013-09-23 | 2014-01-08 | 华东理工大学 | Method for preparing SiCx nanometer material in transmission electron microscope through electron beam induced liquid phase deposition |
| CN103498133B (en) * | 2013-09-23 | 2016-02-10 | 华东理工大学 | A kind of method being prepared SiCx nano material in transmission electron microscope by electron beam-induced liquid deposition |
| CN103693634A (en) * | 2013-12-08 | 2014-04-02 | 北京工业大学 | Method for preparing carbon nano tube through electron beam induced deposition |
| CN103693634B (en) * | 2013-12-08 | 2015-10-28 | 北京工业大学 | E-beam induced deposition prepares the method for carbon nanotube |
| CN104555911A (en) * | 2015-01-20 | 2015-04-29 | 东南大学 | Method for manufacturing nanowire |
| CN104555911B (en) * | 2015-01-20 | 2016-02-10 | 东南大学 | A kind of method preparing nano wire |
| CN109231162A (en) * | 2018-09-07 | 2019-01-18 | 厦门大学 | A kind of method of seamless welding carbon nanotube |
| CN109231162B (en) * | 2018-09-07 | 2019-11-01 | 厦门大学 | A kind of method of seamless welding carbon nanotube |
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