CN102064255A - LED (Light Emitting Diode) and manufacturing method thereof - Google Patents

LED (Light Emitting Diode) and manufacturing method thereof Download PDF

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CN102064255A
CN102064255A CN 201010584046 CN201010584046A CN102064255A CN 102064255 A CN102064255 A CN 102064255A CN 201010584046 CN201010584046 CN 201010584046 CN 201010584046 A CN201010584046 A CN 201010584046A CN 102064255 A CN102064255 A CN 102064255A
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sic
layer
silicon substrate
light
semiconductor layer
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张汝京
牛崇实
张翼德
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XI'AN SHENGUANG ANRUI OPTOELECTRONIC TECHNOLOGY Co Ltd
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XI'AN SHENGUANG ANRUI OPTOELECTRONIC TECHNOLOGY Co Ltd
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Abstract

The invention discloses an LED (Light Emitting Diode) and a manufacturing method thereof. The LED comprises a silicon substrate, a buffering layer, a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer. The buffering layer is formed on the silicon substrate. The first conductive semiconductor layer, the active layer and the second conductive semiconductor layer are sequentially formed on the buffering layer. The buffering layer is made of SiC or InN. The lattice constant of the SiC or InN is between and more approximative to the lattice constants of the silicon substrate and a gallium nitride material formed on the buffering layer; therefore, the problems of lattice constant mismatch and stress between the silicon substrate and the gallium nitride material can be solved, the crystal disadvantages of other film layers formed on the substrate are reduced, and the internal quantum efficiency of the LED is improved; in addition, the SiC or InN material has excellent electric conductivity and thermal conductivity, which is beneficial to improving the performances of the LED.

Description

Light-emitting diode and manufacture method thereof
Technical field
The present invention relates to integrated circuit and make the field, particularly relate to a kind of light-emitting diode and manufacture method thereof.
Background technology
Light-emitting diode (LED, Light Emitting Diode) is applied to various fields owing to have long, advantage such as power consumption is low of life-span, especially day by day significantly improves along with its illumination performance index, and LED is commonly used for light-emitting device at lighting field.Wherein, be the III-V compounds of group of representative with gallium nitride (GaN) because have that band gap is wide, luminous efficiency is high, characteristics such as electronics saturation drift velocity height, chemical property are stable, in field of optoelectronic devices such as high brightness blue light-emitting diode, blue lasers huge application potential is arranged, caused people's extensive concern.
Specifically please refer to Fig. 1, it is the generalized section of a kind of light-emitting diode of prior art.As shown in Figure 1, described light-emitting diode is the gallium nitrate based light-emitting diode of L type structure, and described light-emitting diode is the light-emitting diode of Sapphire Substrate.Described light-emitting diode comprises: Sapphire Substrate 100; Be positioned at resilient coating 110, n type semiconductor layer 120, active layer 130, p type semiconductor layer 140 on the Sapphire Substrate 100 successively.Because Sapphire Substrate 100 is non-conductive, therefore, described light-emitting diode also needs to form the opening 121 that the degree of depth extends to n type semiconductor layer 120, wherein, n type electrode 150 is positioned at described opening 121, be used to connect n type semiconductor layer 120 and power cathode, p type electrode 160 is positioned at p type semiconductor layer 140 tops, is used to connect p type semiconductor layer 140 and positive source.
Wherein, the material of n type semiconductor layer 120 gallium nitride (n-GaN) that mixes of n type normally; Described active layer 130 generally includes multiple quantum well active layer, and the material of multiple quantum well active layer for example is indium gallium nitride (InGaN); The material of described p type semiconductor layer 140 is the gallium nitride (p-GaN) of p type doping normally.Described light-emitting diode is used for when luminous, with first electrode 150 be electrically connected to power cathode, second electrode 160 is electrically connected to positive source, because n type semiconductor layer 120 is opposite with the doping type of p type semiconductor layer 140, the gallium nitride that the n type mixes drives by external voltage and makes electron drift, the gallium nitride that the p type mixes drives by external voltage and makes hole drift, the combination again mutually in multiple quantum well active layer (being also referred to as active layer or luminescent layer) of described hole and electronics, thereby reverberation.
In described light-emitting diode, the material of resilient coating 110 is the gallium nitride of low-temperature epitaxy normally, described resilient coating is used to improve the problem of the lattice constant mismatch between substrate 100 and the gallium nitride material, reduce to be formed at the crystal defect of other rete on the substrate, improve the internal quantum efficiency of light-emitting diode.Yet the gallium nitride material cost is very high, is unfavorable for reducing production costs.
A kind of silicon substrate GaN-based light-emitting diode is also disclosed in the prior art, because the lattice mismatch between silicon substrate and the gallium nitride semiconductor material is up to 17%, and there be the problem of gallium to the silicon face melt back, for obtaining high-quality gallium nitride-based semiconductor material on the silicon substrate, prior art generally adopts metallo-organic compound chemical vapor deposition (MOCVD) technology, growing aluminum nitride (AlN) resilient coating and epitaxial layer of gallium nitride successively on silicon substrate, detailed content can be 200910186565 Chinese patent application referring to application number.But because aluminium nitride is poor conductor, the general device architecture that adopts " horizontal type (or L type) " perhaps corrodes aluminium nitride and makes " vertical-type (or V-type) " electrode structure again after peeling off together with silicon substrate, and manufacture craft is comparatively complicated.
Summary of the invention
The invention provides a kind of light-emitting diode and manufacture method thereof, with the lattice constant mismatch between solution silicon substrate and the gallium nitride material and the problem of stress.
For solving the problems of the technologies described above, the invention provides a kind of light-emitting diode, comprising: silicon substrate; Be formed at the resilient coating on the described silicon substrate; Be formed at first conductive type semiconductor layer, active layer and second conductive type semiconductor layer on the described resilient coating successively, it is characterized in that, the material of described resilient coating is SiC or InN.
Optionally, in described light-emitting diode, the material of described resilient coating is made up of 3C-SiC and the 4H-SiC or the 6H-SiC that are formed on the 3C-SiC.
Optionally, in described light-emitting diode, described light-emitting diode also comprises the transparency conducting layer that is formed on described second conductive type semiconductor layer.Described light-emitting diode also comprises the first conduction type electrode and the second conduction type electrode, and the described first conduction type electrode is positioned on the surface of silicon substrate away from first conductive type semiconductor layer, and the described second conduction type electrode is positioned on the transparency conducting layer.
Optionally, in described light-emitting diode, described first conduction type is the n type, and described second conduction type is the p type.The material of described first conductive type semiconductor layer is n-GaN, and described active layer comprises multiple quantum well active layer, and the material of described multiple quantum well active layer is InGaN; The material of described second conductive type semiconductor layer is p-GaN.Mixed n type foreign ion in described silicon substrate and the resilient coating.
Accordingly, the present invention also provides a kind of manufacturing method for LED, comprising: silicon substrate is provided; Form resilient coating on described silicon substrate, the material of described resilient coating is SiC or InN; On described resilient coating, form first conductive type semiconductor layer, active layer and second conductive type semiconductor layer successively.
Optionally, in described method for manufacturing light-emitting, comprise in the step that forms resilient coating on the described silicon substrate: on described silicon substrate, form 3C-SiC; On 3C-SiC, form 4H-SiC or 6H-SiC.Utilize the chemical vapour deposition (CVD) mode on described silicon substrate, to form 3C-SiC.Utilize sublimed method on 3C-SiC, to form 4H-SiC or 6H-SiC.
Optionally, in described method for manufacturing light-emitting, form after second conductive type semiconductor layer, also comprise: on second conductive type semiconductor layer, form transparency conducting layer; On described transparency conducting layer, form the second conduction type electrode; Form the first conduction type electrode at described silicon substrate on away from the surface of first conductive type semiconductor layer.
Optionally, in described method for manufacturing light-emitting, described first conduction type is the n type, and described second conduction type is the p type.The material of described first conductive type semiconductor layer is n-GaN, and described active layer comprises multiple quantum well active layer, and the material of described multiple quantum well active layer is InGaN; The material of described second conductive type semiconductor layer is p-GaN.
Optionally, in described method for manufacturing light-emitting, before forming resilient coating on the described silicon substrate, also comprise: carry out ion implantation technology for the first time, injecting ion is arsenic ion or phosphonium ion, and the injection energy is 50KeV~500KeV, and implantation dosage is 10 14/ cm 2~10 16/ cm 2Form after the described resilient coating, also comprise: carry out ion implantation technology for the second time, injecting ion is arsenic ion or phosphonium ion, and the injection energy is 50KeV~500KeV, and implantation dosage is 10 14/ cm 2~10 16/ cm 2
Compared with prior art, the material of the resilient coating of light-emitting diode of the present invention is carborundum (SiC) or indium nitride (InN), the lattice constant of described SiC or InN is between silicon substrate and be formed between the lattice constant of the gallium nitride material on the resilient coating and comparatively approaching, can solve the lattice constant mismatch between silicon substrate and the gallium nitride material and the problem of stress, reduce to be formed at the crystal defect of other rete on the substrate, improve the internal quantum efficiency of light-emitting diode; And described SiC or InN material have favorable conductive and heat conductivility, help improving the conduction and the heat dispersion of light-emitting diode; In addition, to compare cost lower for described SiC or InN and gallium nitride.
Description of drawings
Fig. 1 is the generalized section of the light-emitting diode of prior art;
Fig. 2 is the schematic diagram of the light-emitting diode of the embodiment of the invention;
Fig. 3 is the flow chart of the method for manufacturing light-emitting of the embodiment of the invention;
Fig. 4 A~4D is the generalized section of each step corresponding construction of the method for manufacturing light-emitting of the embodiment of the invention.
Embodiment
Core concept of the present invention is, a kind of light-emitting diode and manufacture method thereof are provided, the material of the resilient coating of described light-emitting diode is SiC or InN, the lattice constant of described SiC or InN is between silicon substrate and be formed between the lattice constant of the gallium nitride material on the resilient coating and comparatively approaching, can solve the lattice constant mismatch between silicon substrate and the gallium nitride material and the problem of stress, reduce to be formed at the crystal defect of the rete on the substrate, improve the internal quantum efficiency of light-emitting diode; And SiC or InN material have favorable conductive and heat conductivility, help improving the conduction and the heat conductivility of light-emitting diode; In addition, to compare cost lower for SiC or InN material and gallium nitride.
Please refer to Fig. 2, it is the schematic diagram of the light-emitting diode of the embodiment of the invention.Described light-emitting diode is gallium nitrate based blue light diode.As shown in Figure 2, described light-emitting diode comprises: silicon substrate 200; Be formed at the resilient coating 210 on the described silicon substrate 200; Be formed at first conductive type semiconductor layer 220, active layer 230 and second conductive type semiconductor layer 240 on the described resilient coating 210 successively, wherein, the material of described resilient coating 210 is SiC or InN.
As everyone knows, SiC (carborundum) can form different crystal structures under different physicochemical environments, and these compositions are identical, form, and structure and the discrepant crystal of physical characteristic are called polymorph, and the SiC that has been found that at present resembles variant more kind more than 200.General, SiC resembles variant more and is made up of numbers and symbols, wherein C, H, R represent respectively cube, six sides, rhombohedral lattice structure, the solid matter number of layers of SiC atom in alphabetical preceding digitized representation accumulation cycle.For example, just to represent the SiC variant be to be that 3 layers SiC atom solid matter is a cubic lattice structure by the cycle to 3C; 4H represent the SiC variant be by the cycle be the hexagonal lattice structure that 4 layers atom solid matter forms; 6H represent the SiC variant be by the cycle be the hexagonal lattice structure that 6 layers atom solid matter forms; It is to be that 15 atomic layer solid matter is piled up the diamond structure that forms by the cycle that 15R represents the SiC variant.
Preferable, the material of described resilient coating 210 is made up of 3C-SiC layer 211 and the 4H-SiC or the 6H-SiC layer 212 that are formed on the 3C-SiC layer 211.Wherein, the lattice constant of described 4H-SiC and 6H-SiC material is 3.08, very approaching with the lattice constant (3.189) of GaN, help solving the lattice constant mismatch between silicon substrate and the gallium nitride material and the problem of stress, reduce to be formed at the crystal defect of other rete on the substrate, improve the internal quantum efficiency of light-emitting diode; Although and the lattice constant of described 3C-SiC (4.36) is though relatively large with the lattice constant difference of GaN, but, compare with directly grow on silicon substrate 200 4H-SiC or 6H-SiC material, the manufacturing process that forms 4H-SiC or 6H-SiC on silicon substrate 200 after elder generation's formation 3C-SiC again on 3C-SiC is comparatively simple.Therefore, in the present embodiment, adopt the stacked structure of 3C-SiC and 4H-SiC (or 6H-SiC) to be used as resilient coating, can under the simple prerequisite of manufacturing process, obtain preferable relatively optical property.
Wherein, first conduction type is the n type, and second conduction type is the p type; The material of described first conductive type semiconductor layer 220 is n-GaN, and described active layer 230 comprises multiple quantum well active layer, and the material of described multiple quantum well active layer is InGaN, is used to send the blue light that wavelength is 470nm; The material of described second conductive type semiconductor layer 240 is p-GaN.
Wherein, described light-emitting diode also comprises the transparency conducting layer (TCL) 250 that is formed on second conductive type semiconductor layer 240, because the conductivity of p-GaN is smaller, therefore at the current-diffusion layer of second conductive type semiconductor layer, 240 surface deposition layer of metal, help to improve conductivity, the material of described transparency conducting layer 250 for example is the Ni/Au material.
Preferable, described light-emitting diode also comprises the first conduction type electrode 270 and the second conduction type electrode 260, the described first conduction type electrode 270 is positioned on the surface (being the back side of silicon substrate 200) of silicon substrate 200 away from first conductive type semiconductor layer 220, and the described second conduction type electrode 260 directly is formed on the transparency conducting layer 250.
In the present embodiment, the described second conduction type electrode 260 is a p type electrode, and the described first conduction type electrode 270 is a n type electrode, has mixed n type foreign ion (phosphonium ion or arsenic ion) in described silicon substrate 200 and the resilient coating 210.Because described SiC or InN material all have excellent conducting performance, and described silicon substrate 200 promptly has excellent conducting performance after having mixed n type foreign ion.Therefore, after having mixed n type foreign ion, can directly on the back side of silicon substrate 200, form the first conduction type electrode 270, thereby form vertical light emitting diode construction (also can be described as V-structure).
Described light-emitting diode is used for when luminous, with the second conduction type electrode 260 be connected to positive source, the first conduction type electrode 270 is connected to power cathode, LED core links to each other with positive source by the second conduction type electrode 260, link to each other with power cathode by the first conduction type electrode 270, the active layer 230 in the LED core is luminous under the function of current.Than traditional horizontal type (or L type) light emitting diode construction of being made by Sapphire Substrate, vertical light emitting diode construction conduction and radiating effect are better, and help saving chip area, raising chip utilance.
Accordingly, the present invention also provides a kind of method for manufacturing light-emitting.Please refer to Fig. 3, it is the schematic flow sheet of the method for manufacturing light-emitting of the embodiment of the invention, and this method may further comprise the steps:
Step S300 provides silicon substrate;
Step S310 forms resilient coating on described silicon substrate, the material of described resilient coating is SiC or InN;
Step S320 forms first conductive type semiconductor layer, active layer and second conductive type semiconductor layer successively on described resilient coating.
Below in conjunction with generalized section method for manufacturing light-emitting of the present invention is described in more detail, the preferred embodiments of the present invention have wherein been represented, should be appreciated that those skilled in the art can revise the present invention described here, and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as limitation of the present invention.
With reference to figure 4A, at first, execution in step S300 provides silicon substrate 400.In the present embodiment, the silicon substrate (p-Si) that described silicon substrate 400 mixes for the p type, the resistivity of described silicon substrate 400 for example is 1~20 Ω .cm.Certainly, described silicon substrate 400 can also be the silicon substrate (n-Si) that the n type mixes; And the present invention does not limit the resistivity of silicon substrate yet.
With reference to figure 4B, then, execution in step S310 forms resilient coating 410 on described silicon substrate 400.In the present embodiment, the material of described resilient coating 410 is SiC (carborundum); Certainly, the material of described resilient coating 410 can also be InN (indium nitride).The lattice constant of described SiC or InN material and the lattice constant of gallium nitride material are comparatively approaching, can solve the problem of the lattice constant mismatch between silicon substrate and the gallium nitride material, reduce to be formed at the crystal defect of other rete on the silicon substrate, improve the internal quantum efficiency of light-emitting diode; And SiC or InN material have favorable conductive and heat conductivility, help improving the conduction and the heat conductivility of light-emitting diode; In addition, to compare cost lower for SiC or InN and gallium nitride.
Preferable, the material of described resilient coating is 3C-SiC and is formed at 4H-SiC or 6H-SiC on the 3C-SiC, the stacked structure that adopts 3C-SiC and 4H-SiC (or 6H-SiC) can obtain preferable relatively optical property as resilient coating under the simple prerequisite of manufacturing process.
In the present embodiment, at first, utilize the chemical vapor deposition (CVD) mode 3C-SiC layer 411 of on described silicon substrate 400, growing; Afterwards, utilize sublimed method (Lely method) on 3C-SiC layer 411, grow 4H-SiC or 6H-SiC layer 412.Wherein, the employed gas of described chemical vapor deposition method is C 3H 8, H 2And SiH 4Mist, reaction temperature for example is 1200 ℃~1400 ℃; The reaction temperature of described sublimed method for example is 2600 ℃, and what the mode of utilization distillation was grown on described 3C-SiC must be 4H-SiC or 6H-SiC monocrystal.Be understandable that above-mentioned numerical value also is not used in qualification the present invention, also can utilize other known growing technology and technology on silicon substrate 400, to form SiC or InN material.
With reference to figure 4C, next, form first conductive type semiconductor layer 420, active layer 430, second conductive type semiconductor layer 440 on resilient coating 410 successively, described first conductive type semiconductor layer 420, active layer 430 and second conductive type semiconductor layer 440 constitute the tube core of light-emitting diode.In the present embodiment, described first conduction type is the n type, and second conduction type is the p type.The gallium nitride (n-GaN) that the material of described first conductive type semiconductor layer 420 mixes for the n type; Described active layer 430 comprises multiple quantum well active layer, and the material of described multiple quantum well active layer is indium gallium nitride (InGaN); The gallium nitride (p-GaN) that the material of described second conductive type semiconductor layer 440 mixes for the P type.Can utilize conventional metal organic chemical vapor deposition (MOCVD) technology to form first conductive type semiconductor layer 420, active layer 430 and second conductive type semiconductor layer 440.
Continue with reference to figure 4C, after forming second conductive type semiconductor layer 440, form transparency conducting layer 450 on described second conductive type semiconductor layer 440, described transparency conducting layer 450 helps to improve conductivity, and the material of described transparency conducting layer 450 can adopt the Ni/Au material.
With reference to figure 4D, subsequently, on transparency conducting layer 450, form the second conduction type electrode 460; Go up the formation first conduction type electrode 470 at silicon substrate 400 away from the surface (being the back side of silicon substrate 400) of first conductive type semiconductor layer 420.
In the present embodiment, the second conduction type electrode 460 is a p type electrode, and the first conduction type electrode 470 is a n type electrode.Because the silicon substrate (p-Si) that described silicon substrate 400 mixes for the p type is preferred, before forming resilient coating 410 on the described silicon substrate 400, carry out ion implantation technology for the first time earlier, to mix n type ion in the silicon substrate that mixes in described p type; And after the step that forms resilient coating 410, carry out ion implantation technology for the second time again, in described resilient coating 410, to inject n type ion, thereby form vertical light emitting diode construction, vertical light emitting diode construction is than traditional horizontal type (or L type) light emitting diode construction, radiating effect is better, and helps saving chip area, improves the chip utilance.
In the method for manufacturing light-emitting of present embodiment, come in silicon substrate 400 and resilient coating 410, to inject n type ion by carrying out twice ion implantation technology, can make the ion of injection more even, conductive effect is better.Wherein, described first time, the injection ion of ion implantation technology was arsenic ion or phosphonium ion, and the injection energy is 50KeV~500KeV, and implantation dosage is 10 14/ cm 2~10 16/ cm 2Described second time, the injection ion of ion implantation technology was arsenic ion or phosphonium ion, and the injection energy is 50KeV~500KeV, and implantation dosage is 10 14/ cm 2~10 16/ cm 2
Yet will be appreciated that, only carry out the primary ions injection technologies forming resilient coating 410 backs, can reach equally and make silicon substrate 400 and resilient coating 410 all mix the purpose of n type ion with conduction.Perhaps, the silicon substrate that directly provides the n type to mix also can reach same conduction purpose.And, described first time ion implantation technology and for the second time ion implantation technology the injection ion, inject energy and implantation dosage also can require to do corresponding adjustment according to concrete conduction.
Need to prove, the foregoing description is an example with the blue LED, but the present invention is not restricted to this, and the foregoing description can also be red light emitting diodes, yellow light-emitting diode, those skilled in the art can make amendment, replace and be out of shape the present invention according to the foregoing description.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.

Claims (17)

1. a light-emitting diode comprises: silicon substrate; Be formed at the resilient coating on the described silicon substrate; Be formed at first conductive type semiconductor layer, active layer and second conductive type semiconductor layer on the described resilient coating successively, it is characterized in that, the material of described resilient coating is SiC or InN.
2. light-emitting diode as claimed in claim 1 is characterized in that, the material of described resilient coating is made up of 3C-SiC and the 4H-SiC or the 6H-SiC that are formed on the 3C-SiC.
3. light-emitting diode as claimed in claim 1 is characterized in that, described light-emitting diode also comprises the transparency conducting layer that is formed on described second conductive type semiconductor layer.
4. light-emitting diode as claimed in claim 3, it is characterized in that, described light-emitting diode also comprises the first conduction type electrode and the second conduction type electrode, the described first conduction type electrode is positioned on the surface of silicon substrate away from first conductive type semiconductor layer, and the described second conduction type electrode is positioned on the transparency conducting layer.
5. light-emitting diode as claimed in claim 4 is characterized in that, described first conduction type is the n type, and described second conduction type is the p type.
6. light-emitting diode as claimed in claim 5 is characterized in that, the material of described first conductive type semiconductor layer is n-GaN, and described active layer comprises multiple quantum well active layer, and the material of described multiple quantum well active layer is InGaN; The material of described second conductive type semiconductor layer is p-GaN.
7. light-emitting diode as claimed in claim 4 is characterized in that, has mixed n type foreign ion in described silicon substrate and the resilient coating.
8. a manufacturing method for LED is characterized in that, comprising:
Silicon substrate is provided;
Form resilient coating on described silicon substrate, the material of described resilient coating is SiC or InN;
On described resilient coating, form first conductive type semiconductor layer, active layer and second conductive type semiconductor layer successively.
9. manufacturing method for LED as claimed in claim 8 is characterized in that, the step that forms resilient coating on described silicon substrate comprises:
On described silicon substrate, form the 3C-SiC layer; On 3C-SiC, form 4H-SiC layer or 6H-SiC layer.
10. manufacturing method for LED as claimed in claim 9 is characterized in that, utilizes the chemical vapour deposition (CVD) mode to form the 3C-SiC layer on described silicon substrate.
11. manufacturing method for LED as claimed in claim 10 is characterized in that, utilizes sublimed method to form 4H-SiC layer or 6H-SiC layer on the 3C-SiC layer.
12. manufacturing method for LED as claimed in claim 8 is characterized in that, forms after second conductive type semiconductor layer, also comprises: form transparency conducting layer on second conductive type semiconductor layer.
13. method for manufacturing light-emitting as claimed in claim 12 is characterized in that, forms after the described transparency conducting layer, also comprises:
On described transparency conducting layer, form the second conduction type electrode;
Form the first conduction type electrode at described silicon substrate on away from the surface of first conductive type semiconductor layer.
14. method for manufacturing light-emitting as claimed in claim 12 is characterized in that, described first conduction type is the n type, and described second conduction type is the p type.
15. method for manufacturing light-emitting as claimed in claim 14 is characterized in that, the material of described first conductive type semiconductor layer is n-GaN, and described active layer comprises multiple quantum well active layer, and the material of described multiple quantum well active layer is InGaN; The material of described second conductive type semiconductor layer is p-GaN.
16. method for manufacturing light-emitting as claimed in claim 14 is characterized in that, before forming resilient coating on the described silicon substrate, also comprise: carry out ion implantation technology for the first time, injecting ion is arsenic ion or phosphonium ion, and the injection energy is 50KeV~500KeV, and implantation dosage is 10 14/ cm 2~10 16/ cm 2
17. method for manufacturing light-emitting as claimed in claim 16 is characterized in that, forms after the described resilient coating, also comprise: carry out ion implantation technology for the second time, injecting ion is arsenic ion or phosphonium ion, and the injection energy is 50KeV~500KeV, and implantation dosage is 10 14/ cm 2~10 16/ cm 2
CN 201010584046 2010-12-10 2010-12-10 LED (Light Emitting Diode) and manufacturing method thereof Pending CN102064255A (en)

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CN109273525A (en) * 2017-07-18 2019-01-25 上海新昇半导体科技有限公司 A kind of GaN device and its manufacturing method, electronic device
CN111653473A (en) * 2020-04-26 2020-09-11 西安电子科技大学 Silicon-based gallium nitride microwave device material structure with enhanced heat dissipation
CN111653473B (en) * 2020-04-26 2023-10-13 西安电子科技大学 Silicon-based gallium nitride microwave device material structure with enhanced heat dissipation

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Application publication date: 20110518