CN102237435A - Edge removing method for solar cell - Google Patents
Edge removing method for solar cell Download PDFInfo
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- CN102237435A CN102237435A CN2010101580468A CN201010158046A CN102237435A CN 102237435 A CN102237435 A CN 102237435A CN 2010101580468 A CN2010101580468 A CN 2010101580468A CN 201010158046 A CN201010158046 A CN 201010158046A CN 102237435 A CN102237435 A CN 102237435A
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- solar cell
- corrosion
- silicon chip
- pure water
- pressure spraying
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention belongs to the technical field of solar cell machining, in particular relates to an edge removing method of a solar cell. The method comprises the following steps of: (S101) closely overlapping silicon wafers; (S102) dipping the silicon wafers by using purified water; (S103) spraying the silicon wafers at a high pressure to corrode the silicon wafers; and (S104) washing the silicon wafers. By using the edge removing method provided by the invention, the corrosion can be accurately controlled without spreading to the front faces of the silicon wafers; therefore, the effective area of a PN junction on the front face is increased; meanwhile, an electrode on the front face can also extend to the edge of the silicon wafer; the collecting effect of the edge current is enhanced, and the conversion efficiency of the solar cell is further improved. Meanwhile, according to the invention, hundreds of silicon wafers can be overlapped together to be subjected to chemical corrosion so that the edge removing method of the solar cell, provided by the invention, is suitable for requirements of the industrial volume production.
Description
Technical field
The invention belongs to the solar cell processing technique field, be specifically related to a kind of Deriming method of solar cell.
Background technology
Crystal-silicon solar cell is the solar cell of present main flow, and its production process is: go affected layer making herbs into wool, diffusion, etching periphery, dephosphorization silex glass, PECVD deposited silicon nitride passivated reflection reducing to penetrate film, silk screen printing positive and negative electrode, positive and negative electrode co-sintering.Wherein the etching periphery is also referred to as trimming, is the short circuit knot that forms at the edge when spreading in order to remove, and the method for trimming mainly contains at present: laser Ke Bianfa, plasma etching method, chemical corrosion method etc.Wherein the plasma etching method is the most ripe, but there was quarter in the method, bores and carve and the uneven phenomenon of etching; Adopt laser grooving method and plasma etching method trimming, all easily PN junction is caused certain damage, influence the quality of edge PN junction, and then reduce the photoelectric conversion efficiency of solar cell marginal portion.Chemical corrosion method has two kinds, and a kind of is that hundreds of silicon chips closely are stacked together, and steps up with instrument, put into etchant solution then and carry out edge corrosion, another kind is the method that is called " waterborne floating ", and this method is to allow silicon chip swim on the corrosion liquid level, and the back side and edge are corroded together.Chemical corrosion method can not produce damage to PN junction, but the same quarter, brill quarter and the uneven phenomenon of etching of existing with the plasma etching method of these two kinds of chemical corrosion methods is difficult for realizing accurately corroding.
Patent CN101604711A has provided a kind of chemical corrosion Deriming method, this method is the edge that corrosive slurry is evenly spread upon diffusion back silicon chip, then silicon chip is heated, accelerate corrosion rate, corrosion finishes and gets final product with pure water rinsing, this method can realize accurate etching, and the marginal portion conversion efficiency is improved, and then improves the conversion efficiency of whole solar cell.But the edge is smeared and is difficult for realizing industrial automation, and there is certain difficulty in volume production.
Summary of the invention
In order to address the above problem, the object of the present invention is to provide a kind of Deriming method that can accurately corrode and can be fit to the solar cell of industrialization volume production.
For achieving the above object, the technical solution adopted in the present invention is:
A kind of Deriming method of solar cell is characterized in that, comprising:
Closely stack step, with the clamping that closely is stacked together of at least two silicon chips;
The pure water soaking step is put into pure water with the silicon chip that closely is stacked together and is soaked;
The high-pressure spraying corrosion step carries out chemical corrosion with the side surface of the silicon chip of corrosive liquid high-pressure spraying after pure water soaks;
Cleaning step will be put into pure water through the silicon chip after the chemical corrosion and clean up.
The Deriming method of described solar cell, the spray pressure in the described high-pressure spraying corrosion step are 0.5 to 20 crust.
Preferably, the spray pressure in the described high-pressure spraying corrosion step is 1 to 5 crust;
1 crust (bar)=100,000 handkerchiefs (Pa)=10 newton/square centimeter=0.1Mpa.
Preferably, the spray time in the described high-pressure spraying corrosion step is 1 to 3 minute.
Preferably, employed corrosive liquid is acid etching solution or alkaline corrosion liquid in the described high-pressure spraying corrosion step.
Preferably, in described high-pressure spraying corrosion step, in the time of the corrosive liquid high-pressure spraying, slowly rotate silicon chip and enable homogeneous corrosion.
Preferably, the soak time in the described pure water soaking step is 1 to 2 minute.
In the pure water soaking step of the present invention, it is in order to allow pure water be full of the slit of silicon chip, stop the immersion of corrosive liquid under capillary effect, making chemical corrosion only occur in fringe region that the silicon chip that closely is stacked together is put into the pure water immersion.
In the pure water soaking step of the present invention, must use pure water,, reduce the quality of solar cell to prevent silicon chip being polluted destruction with the water of impurity.
In the high-pressure spraying corrosion step of the present invention, the corrosive liquid high-pressure spraying is carried out chemical corrosion at the silicon chip side surface: the one, in order to accelerate corrosion rate, the 2nd, in order only to accelerate the corrosion rate at edge, because the corrosive liquid of high velocity jet can only arrive the side surface of silicon chip, the corrosion rate of the side surface of silicon chip has been quickened in the mechanical shock of high-speed liquid, even there is a spot of corrosive liquid to immerse in the slit of silicon chip, the speed of its corrosion also can be very slow, thereby realize the accurate corrosion to the silicon chip side surface.
As from the foregoing, Deriming method of the present invention can accurately be controlled corrosion, can not spread to the silicon chip front, thereby the effective area of increase front PN junction, positive simultaneously electrode also can extend to the edge of silicon chip, improves the collecting effect of edge current, further improves the conversion efficiency of solar cell.Simultaneously, the present invention can be stacked together hundreds of silicon chip and carry out chemical corrosion, is fit to industrialization volume production demand.
Description of drawings
Accompanying drawing described herein is used to provide further understanding of the present invention, constitutes the application's a part, does not constitute to improper qualification of the present invention, in the accompanying drawings:
Fig. 1 is the schematic flow sheet of the Deriming method of a kind of solar cell provided by the invention;
Fig. 2 is the principle schematic of the Deriming method of a kind of solar cell provided by the invention.
Among the figure:
1, silicon chip 2, pure water 3, corrosive liquid
Embodiment
Describe the present invention in detail below in conjunction with accompanying drawing and specific embodiment, be used for explaining the present invention in this illustrative examples of the present invention and explanation, but not as a limitation of the invention.
Fig. 1 is the schematic flow sheet of the Deriming method of a kind of solar cell provided by the invention;
As shown in Figure 1, the present invention includes:
S101 closely stacks silicon chip, with the clamping that closely is stacked together of at least two silicon chips.
During volume production, but tool using clamp, and quantity can be hundreds and thousands of, to enhance productivity.Because silicon chip surface is level and smooth, so the spacing between the silicon chip is very little, can make hydrone have certain force of strain and immerse the gap to stop corrosive liquid in slit aperture, make chemical corrosion only occur in the edge of silicon chip.
S102, pure water soaks silicon chip, the silicon chip that closely is stacked together is put into pure water soaked 1 to 2 minute.
Soak 1 to 2 minute time, be enough to that pure water is entered and be full of slit between the silicon chip, soak certainly the longer time also can, still, be unfavorable for improving volume production efficient.
S103, the high-pressure spraying corrosion of silicon will be put into etching apparatus through the silicon chip that soaks then, slowly rotate silicon chip on one side, carried out the about 1-3 of chemical corrosion minute at the silicon chip side surface with acid etching solution or alkaline corrosion liquid high-pressure spraying on one side.
Slowly the rotation silicon chip is in order to make corrosive liquid can evenly spray the side surface that all silicon chips need corrode.Described high-pressure can be regulated between 20 crust at 0.5 crust according to actual conditions, and the time inconsistent as the silicon chip number of required corrosion, the corrosion that requires is different with degree, and pressure can be slightly different.Certainly, consider the actual demand of the situation and the volume production of equipment, pressure limit is that 1 crust to 5 crust are preferable pressure limit.
S104, cleaning silicon chip is put into pure water with silicon chip and is cleaned up.
Certainly, quick and clean for what clean, also can use ultrasonic waves for cleaning, clean the silicon chip that finishes and can flow to next procedure---dephosphorization silex glass.
As shown in Figure 2, the present invention allows pure water 2 soak to account for the micro gap of 1 of silicon chip earlier, and the corrosive liquid 3 of high velocity jet is ejected into the side surface of silicon chip 1, and pure water 2 has stoped corrosive liquid to enter the silicon chip slit, has prevented lateral erosion.
More than the technical scheme that the embodiment of the invention provided is described in detail, used specific case herein the principle and the execution mode of the embodiment of the invention are set forth, the explanation of above embodiment only is applicable to the principle that helps to understand the embodiment of the invention; Simultaneously, for one of ordinary skill in the art, according to the embodiment of the invention, the part that on embodiment and range of application, all can change, in sum, this description should not be construed as limitation of the present invention.
Claims (7)
1. the Deriming method of a solar cell is characterized in that, comprising:
Closely stack step, with the clamping that closely is stacked together of at least two silicon chips;
The pure water soaking step is put into pure water with the silicon chip that closely is stacked together and is soaked;
The high-pressure spraying corrosion step carries out chemical corrosion with the side surface of the silicon chip of corrosive liquid high-pressure spraying after pure water soaks;
Cleaning step will be put into pure water through the silicon chip after the chemical corrosion and clean up.
2. the Deriming method of solar cell according to claim 1 is characterized in that:
Spray pressure in the described high-pressure spraying corrosion step is 0.5 to 20 crust.
3. the Deriming method of solar cell according to claim 2 is characterized in that:
Spray pressure in the described high-pressure spraying corrosion step is 1 to 5 crust.
4. the Deriming method of solar cell according to claim 1 is characterized in that:
Spray time in the described high-pressure spraying corrosion step is 1 to 3 minute.
5. the Deriming method of solar cell according to claim 1 is characterized in that:
Employed corrosive liquid is acid etching solution or alkaline corrosion liquid in the described high-pressure spraying corrosion step.
6. the Deriming method of solar cell according to claim 1 is characterized in that:
In described high-pressure spraying corrosion step, in the time of the corrosive liquid high-pressure spraying, slowly rotate silicon chip and enable homogeneous corrosion.
7. the Deriming method of solar cell according to claim 1 is characterized in that:
Soak time in the described pure water soaking step is 1 to 2 minute.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101580468A CN102237435B (en) | 2010-04-21 | 2010-04-21 | Edge removing method for solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101580468A CN102237435B (en) | 2010-04-21 | 2010-04-21 | Edge removing method for solar cell |
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| Publication Number | Publication Date |
|---|---|
| CN102237435A true CN102237435A (en) | 2011-11-09 |
| CN102237435B CN102237435B (en) | 2013-12-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2010101580468A Expired - Fee Related CN102237435B (en) | 2010-04-21 | 2010-04-21 | Edge removing method for solar cell |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103035491A (en) * | 2012-12-28 | 2013-04-10 | 浙江正邦电力电子有限公司 | Processing method of power semiconductor chip surface |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3951728A (en) * | 1974-07-30 | 1976-04-20 | Hitachi, Ltd. | Method of treating semiconductor wafers |
| US4900395A (en) * | 1989-04-07 | 1990-02-13 | Fsi International, Inc. | HF gas etching of wafers in an acid processor |
| US5087307A (en) * | 1985-12-27 | 1992-02-11 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor substrate |
| CN101587922A (en) * | 2009-07-08 | 2009-11-25 | 中电电气（南京）光伏有限公司 | Etching method of solar battery silicon chip edges and reverse diffusion layer |
-
2010
- 2010-04-21 CN CN2010101580468A patent/CN102237435B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3951728A (en) * | 1974-07-30 | 1976-04-20 | Hitachi, Ltd. | Method of treating semiconductor wafers |
| US5087307A (en) * | 1985-12-27 | 1992-02-11 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor substrate |
| US4900395A (en) * | 1989-04-07 | 1990-02-13 | Fsi International, Inc. | HF gas etching of wafers in an acid processor |
| CN101587922A (en) * | 2009-07-08 | 2009-11-25 | 中电电气（南京）光伏有限公司 | Etching method of solar battery silicon chip edges and reverse diffusion layer |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103035491A (en) * | 2012-12-28 | 2013-04-10 | 浙江正邦电力电子有限公司 | Processing method of power semiconductor chip surface |
| CN103035491B (en) * | 2012-12-28 | 2015-11-18 | 浙江正邦电力电子有限公司 | A kind of power semiconductor chip surface processing method |
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| CN102237435B (en) | 2013-12-11 |
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Addressee: Shaanxi Gsolar Power Co., Ltd. Document name: Notification of Termination of Patent Right |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20131211 Termination date: 20180421 |