CN102237435B - Edge removing method for solar cell - Google Patents
Edge removing method for solar cell Download PDFInfo
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- CN102237435B CN102237435B CN2010101580468A CN201010158046A CN102237435B CN 102237435 B CN102237435 B CN 102237435B CN 2010101580468 A CN2010101580468 A CN 2010101580468A CN 201010158046 A CN201010158046 A CN 201010158046A CN 102237435 B CN102237435 B CN 102237435B
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- solar cell
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- pure water
- pressure spraying
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The invention belongs to the technical field of solar cell machining, in particular relates to an edge removing method of a solar cell. The method comprises the following steps of: (S101) closely overlapping silicon wafers; (S102) dipping the silicon wafers by using purified water; (S103) spraying the silicon wafers at a high pressure to corrode the silicon wafers; and (S104) washing the silicon wafers. By using the edge removing method provided by the invention, the corrosion can be accurately controlled without spreading to the front faces of the silicon wafers; therefore, the effective area of a PN junction on the front face is increased; meanwhile, an electrode on the front face can also extend to the edge of the silicon wafer; the collecting effect of the edge current is enhanced, and the conversion efficiency of the solar cell is further improved. Meanwhile, according to the invention, hundreds of silicon wafers can be overlapped together to be subjected to chemical corrosion so that the edge removing method of the solar cell, provided by the invention, is suitable for requirements of the industrial volume production.
Description
Technical field
The invention belongs to the solar cell processing technique field, be specifically related to a kind of Deriming method of solar cell.
Background technology
Crystal-silicon solar cell is the solar cell of current main flow, and its production process is: go the making herbs into wool of damage layer, diffusion, etching periphery, dephosphorization silex glass, PECVD deposited silicon nitride passivated reflection reducing to penetrate film, silk screen printing positive and negative electrode, positive and negative electrode co-sintering.Wherein the etching periphery is also referred to as trimming, is the short circuit knot formed at edge when removing diffusion, and the method for trimming mainly contains at present: laser incising limit method, plasma etching method, chemical corrosion method etc.Wherein the plasma etching method is the most ripe, but there was quarter in the method, and bored and carve and the inhomogeneous phenomenon of etching; Adopt laser incising channel process and plasma etching method trimming, all easily PN junction is caused to certain damage, affect the quality of edge PN junction, and then reduce the photoelectric conversion efficiency of solar cell marginal portion.Chemical corrosion method has two kinds, and a kind of is that hundreds of silicon chips closely are stacked together, and with instrument, steps up, then put into etchant solution and carry out edge corrosion, another kind is the method that is called " Overwater-floating ", and the method is to allow silicon chip swim on the corrosion liquid level, and the back side is corroded together with edge.Chemical corrosion method can not produce damage to PN junction, but these two kinds of chemical corrosion methods existed quarter, brill quarter and etching inhomogeneous phenomenon the same as the plasma etching method is difficult for realizing accurately corroding.
Patent CN101604711A has provided a kind of chemical corrosion Deriming method, the method is corrosive slurry evenly to be spread upon to the edge of the rear silicon chip of diffusion, then silicon chip is heated, accelerate corrosion rate, corrode and completely get final product by pure water rinsing, the method can realize accurate etching, and the marginal portion conversion efficiency is improved, and then improves the conversion efficiency of whole solar cell.But edge is smeared and is difficult for realizing industrial automation, and there is certain difficulty in volume production.
Summary of the invention
In order to address the above problem, the object of the present invention is to provide a kind of Deriming method that can accurately corrode and can be applicable to the solar cell of industrialization volume production.
For achieving the above object, the technical solution adopted in the present invention is:
A kind of Deriming method of solar cell, is characterized in that, comprising:
Closely stack step, by the clamping that closely is stacked together of at least two silicon chips;
The pure water soaking step, put into pure water by the silicon chip closely be stacked together and soak;
The high-pressure spraying corrosion step, the side surface of the silicon chip by the corrosive liquid high-pressure spraying after pure water soaks carries out chemical corrosion;
Cleaning step, put into pure water by the silicon chip after chemical corrosion and clean up.
The Deriming method of described solar cell, the spray pressure in described high-pressure spraying corrosion step is 0.5 to 20 bar.
Preferably, the spray pressure in described high-pressure spraying corrosion step is 1 to 5 bar;
1 bar (bar)=100,000 handkerchief (Pa)=10 newton/square centimeter=0.1Mpa.
Preferably, the spray time in described high-pressure spraying corrosion step is 1 to 3 minute.
Preferably, the corrosive liquid used in described high-pressure spraying corrosion step is acid etching solution or alkaline corrosion liquid.
Preferably, in described high-pressure spraying corrosion step, in the time of the corrosive liquid high-pressure spraying, the slow circumvolve silicon chip enables homogeneous corrosion.
Preferably, the soak time in described pure water soaking step is 1 to 2 minute.
In pure water soaking step of the present invention, it is in order to allow pure water be full of the gap of silicon chip, stop the immersion of corrosive liquid under capillary effect, making chemical corrosion only occur in fringe region that the silicon chip closely be stacked together is put into to the pure water immersion.
In pure water soaking step of the present invention, must use pure water, to prevent, with the water of impurity, silicon chip is polluted to destruction, reduce the quality of solar cell.
In high-pressure spraying corrosion step of the present invention, the corrosive liquid high-pressure spraying is carried out to chemical corrosion at the silicon chip side surface: the one, in order to accelerate corrosion rate, the 2nd, in order only to accelerate the corrosion rate at edge, because the corrosive liquid of high velocity jet can only arrive the side surface of silicon chip, the corrosion rate of the side surface of silicon chip has been accelerated in the mechanical shock of high-speed liquid, even there is a small amount of corrosive liquid to immerse in the gap of silicon chip, the speed of its corrosion also can be very slow, thereby realize the accurate corrosion to the silicon chip side surface.
As from the foregoing, Deriming method of the present invention can accurately be controlled corrosion, can not spread to front side of silicon wafer, thereby the effective area of increase front PN junction, positive electrode also can extend to the edge of silicon chip simultaneously, improves the collecting effect of edge current, further improves the conversion efficiency of solar cell.Simultaneously, the present invention can be stacked together hundreds of silicon chip to carry out chemical corrosion, is applicable to industrialization volume production demand.
The accompanying drawing explanation
Accompanying drawing described herein is used to provide a further understanding of the present invention, forms the application's a part, does not form inappropriate limitation of the present invention, in the accompanying drawings:
Fig. 1 is the schematic flow sheet of the Deriming method of a kind of solar cell provided by the invention;
Fig. 2 is the principle schematic of the Deriming method of a kind of solar cell provided by the invention.
In figure:
1, silicon chip 2, pure water 3, corrosive liquid
Embodiment
Describe the present invention in detail below in conjunction with accompanying drawing and specific embodiment, in this illustrative examples of the present invention and explanation, be used for explaining the present invention, but not as a limitation of the invention.
Fig. 1 is the schematic flow sheet of the Deriming method of a kind of solar cell provided by the invention;
As shown in Figure 1, the present invention includes:
S101, closely stack silicon chip, by the clamping that closely is stacked together of at least two silicon chips.
During volume production, but tool using clamp, and quantity can be hundreds and thousands of, to enhance productivity.Because silicon chip surface is level and smooth, so the spacing between silicon chip is very little, can make hydrone have certain tension force to stop corrosive liquid to immerse gap in slit aperture, makes chemical corrosion only occur in the edge of silicon chip.
S102, pure water soaks silicon chip, the silicon chip closely be stacked together is put into to pure water and soak 1 to 2 minute.
Soak the time of 1 to 2 minute, be enough to that pure water is entered and be full of the gap between silicon chip, certainly soak the longer time also can, still, be unfavorable for improving volume production efficiency.
S103, the high-pressure spraying corrosion of silicon, then will put into etching apparatus through the silicon chip soaked, on one side the slow circumvolve silicon chip, carry out the about 1-3 minute of chemical corrosion with acid etching solution or alkaline corrosion liquid high-pressure spraying at the silicon chip side surface on one side.
The slow circumvolve silicon chip is in order to make corrosive liquid can evenly spray the side surface that all silicon chips need to corrode.Described high-pressure can be regulated according to actual conditions between 0.5 bar to 20 bar, and the time as inconsistent as the silicon chip number of required corrosion, the corrosion that requires is different with degree, and pressure can be slightly different.Certainly, consider the actual demand of situation and the volume production of equipment, pressure limit is that 1 bar to 5 bar is better pressure limit.
S104, cleaning silicon chip, put into pure water by silicon chip and clean up.
Certainly, quick and clean for what clean, also can use Ultrasonic Cleaning, clean complete silicon chip and can flow to next procedure---the dephosphorization silex glass.
As shown in Figure 2, the present invention first allows pure water 2 soak to account for the micro gap of 1 of silicon chip, and the corrosive liquid 3 of high velocity jet is ejected into the side surface of silicon chip 1, and pure water 2 has stoped corrosive liquid to enter the silicon chip gap, has prevented lateral erosion.
The above technical scheme that the embodiment of the present invention is provided is described in detail, applied specific case herein principle and the execution mode of the embodiment of the present invention are set forth, the explanation of above embodiment is only applicable to help to understand the principle of the embodiment of the present invention; , for one of ordinary skill in the art, according to the embodiment of the present invention, on embodiment and range of application, all will change, in sum, this description should not be construed as limitation of the present invention simultaneously.
Claims (7)
1. the Deriming method of a solar cell, is characterized in that, comprising:
Closely stack step, by the clamping that closely is stacked together of at least two silicon chips;
The pure water soaking step, put into pure water by the silicon chip closely be stacked together and soak, and makes pure water be full of the gap between silicon chip;
The high-pressure spraying corrosion step, the side surface of the silicon chip by the corrosive liquid high-pressure spraying after pure water soaks carries out chemical corrosion;
Cleaning step, put into pure water by the silicon chip after chemical corrosion and clean up.
2. the Deriming method of solar cell according to claim 1 is characterized in that:
Spray pressure in described high-pressure spraying corrosion step is 0.5 to 20 bar.
3. the Deriming method of solar cell according to claim 2 is characterized in that:
Spray pressure in described high-pressure spraying corrosion step is 1 to 5 bar.
4. the Deriming method of solar cell according to claim 1 is characterized in that:
Spray time in described high-pressure spraying corrosion step is 1 to 3 minute.
5. the Deriming method of solar cell according to claim 1 is characterized in that:
The corrosive liquid used in described high-pressure spraying corrosion step is acid etching solution or alkaline corrosion liquid.
6. the Deriming method of solar cell according to claim 1 is characterized in that:
In described high-pressure spraying corrosion step, in the time of the corrosive liquid high-pressure spraying, the slow circumvolve silicon chip enables homogeneous corrosion.
7. the Deriming method of solar cell according to claim 1 is characterized in that:
Soak time in described pure water soaking step is 1 to 2 minute.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101580468A CN102237435B (en) | 2010-04-21 | 2010-04-21 | Edge removing method for solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101580468A CN102237435B (en) | 2010-04-21 | 2010-04-21 | Edge removing method for solar cell |
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| Publication Number | Publication Date |
|---|---|
| CN102237435A CN102237435A (en) | 2011-11-09 |
| CN102237435B true CN102237435B (en) | 2013-12-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2010101580468A Expired - Fee Related CN102237435B (en) | 2010-04-21 | 2010-04-21 | Edge removing method for solar cell |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103035491B (en) * | 2012-12-28 | 2015-11-18 | 浙江正邦电力电子有限公司 | A kind of power semiconductor chip surface processing method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3951728A (en) * | 1974-07-30 | 1976-04-20 | Hitachi, Ltd. | Method of treating semiconductor wafers |
| US4900395A (en) * | 1989-04-07 | 1990-02-13 | Fsi International, Inc. | HF gas etching of wafers in an acid processor |
| CN101587922A (en) * | 2009-07-08 | 2009-11-25 | 中电电气（南京）光伏有限公司 | Etching method of solar battery silicon chip edges and reverse diffusion layer |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62154614A (en) * | 1985-12-27 | 1987-07-09 | Toshiba Corp | Manufacture of junction type semiconductor substrate |
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2010
- 2010-04-21 CN CN2010101580468A patent/CN102237435B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3951728A (en) * | 1974-07-30 | 1976-04-20 | Hitachi, Ltd. | Method of treating semiconductor wafers |
| US4900395A (en) * | 1989-04-07 | 1990-02-13 | Fsi International, Inc. | HF gas etching of wafers in an acid processor |
| CN101587922A (en) * | 2009-07-08 | 2009-11-25 | 中电电气（南京）光伏有限公司 | Etching method of solar battery silicon chip edges and reverse diffusion layer |
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| CN102237435A (en) | 2011-11-09 |
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