CN102246241B - 非易失性存储器的数据刷新 - Google Patents
非易失性存储器的数据刷新 Download PDFInfo
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- CN102246241B CN102246241B CN200980150591.8A CN200980150591A CN102246241B CN 102246241 B CN102246241 B CN 102246241B CN 200980150591 A CN200980150591 A CN 200980150591A CN 102246241 B CN102246241 B CN 102246241B
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- G—PHYSICS
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- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step
Abstract
Description
Claims (15)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/338,879 US7859932B2 (en) | 2008-12-18 | 2008-12-18 | Data refresh for non-volatile storage |
US12/338,879 | 2008-12-18 | ||
PCT/US2009/058969 WO2010080185A1 (en) | 2008-12-18 | 2009-09-30 | Data refresh for non-volatile storage |
Publications (2)
Publication Number | Publication Date |
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CN102246241A CN102246241A (zh) | 2011-11-16 |
CN102246241B true CN102246241B (zh) | 2014-04-16 |
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200980150591.8A Active CN102246241B (zh) | 2008-12-18 | 2009-09-30 | 非易失性存储器的数据刷新 |
Country Status (7)
Country | Link |
---|---|
US (2) | US7859932B2 (zh) |
EP (1) | EP2368251B1 (zh) |
JP (1) | JP5638537B2 (zh) |
KR (1) | KR101565564B1 (zh) |
CN (1) | CN102246241B (zh) |
TW (1) | TW201027541A (zh) |
WO (1) | WO2010080185A1 (zh) |
Families Citing this family (88)
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- 2009-09-30 JP JP2011542157A patent/JP5638537B2/ja active Active
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- 2009-09-30 WO PCT/US2009/058969 patent/WO2010080185A1/en active Application Filing
- 2009-09-30 CN CN200980150591.8A patent/CN102246241B/zh active Active
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KR101565564B1 (ko) | 2015-11-03 |
TW201027541A (en) | 2010-07-16 |
WO2010080185A1 (en) | 2010-07-15 |
EP2368251A1 (en) | 2011-09-28 |
US8098537B2 (en) | 2012-01-17 |
US20110026353A1 (en) | 2011-02-03 |
KR20110106378A (ko) | 2011-09-28 |
JP2012513072A (ja) | 2012-06-07 |
US20100157671A1 (en) | 2010-06-24 |
JP5638537B2 (ja) | 2014-12-10 |
EP2368251B1 (en) | 2014-09-10 |
US7859932B2 (en) | 2010-12-28 |
CN102246241A (zh) | 2011-11-16 |
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