CN102257637A - 光伏器件 - Google Patents

光伏器件 Download PDF

Info

Publication number
CN102257637A
CN102257637A CN2009801515411A CN200980151541A CN102257637A CN 102257637 A CN102257637 A CN 102257637A CN 2009801515411 A CN2009801515411 A CN 2009801515411A CN 200980151541 A CN200980151541 A CN 200980151541A CN 102257637 A CN102257637 A CN 102257637A
Authority
CN
China
Prior art keywords
layer
type doped
doped layer
type
window
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2009801515411A
Other languages
English (en)
Inventor
伊西克·C·奇吉尔亚里
美利莎·艾契尔
哈利·艾华特
汤玛士·J·吉密特
何甘
安德瑞斯·海吉杜斯
雷格·东克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Awbscqemgk Inc
Original Assignee
Awbscqemgk Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Awbscqemgk Inc filed Critical Awbscqemgk Inc
Publication of CN102257637A publication Critical patent/CN102257637A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/065—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the graded gap type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Abstract

提供了用于以与常规太阳能电池相比时增大的效率将电磁辐射(例如太阳能)转化为电能的方法及装置。根据本发明的实施方式，光伏(PV)单元可具有由外延层剥离(ELO)产生的极薄的吸收层、布置在所述PV器件的背面上以避免阴影的所有电接点、和/或正面光捕集与背面光捕集，其使用漫射体及反射体来增加对碰撞在所述PV单元的正面上的光子的吸收。若干PV单元可组合成PV组，且PV组的阵列可使用在低温下应用的金属或导电聚合物的薄条带来连接以形成PV模块。当与常规太阳能电池相比时，这些革新可允许PV器件中的更大的效率及可挠性。

Description

光伏器件
技术领域
本发明的实施方式一般涉及具有增大的效率和较大的可挠性的光伏(PV)器件(例如太阳能电池)及用以制造其的方法。
相关技术的描述
因为化石燃料正以不断增加的速率耗尽，所以对替代能源的需要变得越来越明显。源自风、源自太阳及源自流水的能量提供对化石燃料(例如煤、油及天然气)的可再生的、环境友好的替代物。因为太阳能在地球上的几乎任何地方都容易得到，所以它可能有朝一日成为可行的替代物。
为了利用来自太阳的能量，太阳能电池的结吸收光子以产生电子空穴对，这些电子空穴对被结的内部电场分离以产生电压，从而将光能转化为电能。所产生的电压可通过串联连接太阳能电池而增加，且电流可通过并联连接太阳能电池而增加。太阳能电池可在太阳电池板上组合在一起。逆变器可耦接至若干太阳电池板以将直流功率转换为交流功率。
然而，生产太阳能电池的当前高成本相对于当代器件的低效率水平阻止太阳能电池成为主流能源，且限制太阳能电池可适用的应用。因此，需要适于大量应用的更有效的光伏器件。
发明概述
本发明的实施方式一般涉及用于以与常规太阳能电池相比时增大的效率将电磁辐射(例如太阳能)转化为电能的方法及装置。
本发明的一个实施方式提供一种光伏(PV)器件。该PV器件通常包括p+型掺杂层；n型掺杂层，其布置在p+型掺杂层上以形成p-n层，以使得当光由p-n层所吸收时产生电能；窗层，其布置在n型掺杂层上；抗反射涂层，其布置在窗层上；及漫射体，其布置在p+型掺杂层下。
附图的简要说明
因此，可详细理解本发明的上述特征结构的方式，即，上文简要概述的本发明的更特定的描述可参照实施方式进行，一些实施方式在附图中示出。然而，应注意，附图仅示出本发明的典型实施方式，且因此不应被视为其范围的限制，因为本发明可允许其它同等有效的实施方式。
图1以横截面示出根据本发明的一个实施方式的具有半导体层的示例性厚度、组合物及掺杂的光伏(PV)单元的多个外延层。
图2A至图2D示出根据本发明的实施方式的PV单元的基极层及发射极层的各种层堆栈剖面。
图3A及图3B示出根据本发明的实施方式的PV单元的半导体层，这些半导体层具有在基极层与发射极层之间的偏移p-n层。
图4示出根据本发明的一个实施方式的PV单元的半导体层，这些半导体层具有发射极层，该发射极层具有精细调整的掺杂剖面以使得掺杂程度从p-n层至发射极层的顶部增加。
图5示出根据本发明的一个实施方式的PV单元的半导体层，这些半导体层具有多个AlGaAs发射极层，这些发射极层具有分级的铝(Al)含量。
图6示出根据本发明的一个实施方式的正处于PV单元的背面上的半导体层的接点。
图7示出根据本发明的一个实施方式的在发射极层内的凹槽的边缘上的钝化物。
图8示出根据本发明的一个实施方式的添加至PV单元的正面上的半导体层的抗反射涂层。
图9示出根据本发明的一个实施方式在涂覆抗反射涂层之前将窗层粗糙化。
图10示出根据本发明的一个实施方式的多个窗层，其中最外面的窗层在涂覆抗反射涂层之前被粗糙化。
图11示出根据本发明的一个实施方式的在PV单元的背面上的经粗糙化的发射极层。
图12示出根据本发明的一个实施方式的在PV单元的背面上的漫射体。
图13示出根据本发明的一个实施方式的充当图12的漫射体的介电粒子及白色涂料。
图14示出根据本发明的一个实施方式的充当图12的漫射体的金属粒子。
图15A示出根据本发明的一个实施方式的PV单元的背面。
图15B示出根据本发明的一个实施方式的图15A的PV单元的等效电路。
图16示出根据本发明的一个实施方式的用以形成PV组的多个PV单元之间的p型接点及n型接点的互连。
图17示出根据本发明的一个实施方式的用以形成PV模块的多个PV组的互连。
详细描述
本发明的实施方式一般涉及用于以与常规太阳能电池相比时增大的效率将电磁辐射(例如太阳能)转化为电能的技术及装置。
示范性薄吸收层
图1以横截面示出在制造期间光伏(PV)单元100的各种外延层。可使用用于半导体生长的任何适合的方法在基底(未示出)上形成各种层，这些方法例如是分子束外延法(MBE)或金属有机化学汽相沉积法(MOCVD)。
为了形成PV单元100，可在基底上形成一个或多个缓冲层。缓冲层的目的在于提供介于基底与最终PV单元的半导体层之间的中间层，当形成各种外延层时，该中间层可容纳各种外延层的不同结晶结构。举例而言，具有大约200nm的厚度的缓冲层102可根据最终PV单元的期望组合物而包括III-V族化合物半导体，例如砷化镓(GaAs)。对于一些实施方式，例如当产生GaAs缓冲层时，基底可(例如)包含GaAs。
对于一些实施方式，释放层104可形成于缓冲层102之上。举例而言，释放层104可包含砷化铝(AlAs)，且其厚度在约5至10nm的范围内。薄释放层104的目的被更详细地描述于下文。
在释放层104之上，可形成窗层106。窗层106可包含砷化铝镓(AlGaAs)，例如Al0.3Ga0.7As。窗层106的厚度可在约5nm至30nm的范围内(例如，如所示的20nm)，且可以是未掺杂的。窗层106可为透明的以允许光子穿过在PV单元的正面上的窗层传递到其它下伏层。
基极层108可形成于窗层106之上。基极层108可包含任何适合的III-V族化合物半导体，例如砷化镓。基极层108可为单晶。基极层108可为n型掺杂的，且对于一些实施方式，n型掺杂基极层108的掺杂浓度可在约1×1016cm-3至1×1019cm-3的范围内(例如，如所示的2×1017cm-3)。基极层108的厚度可在约300nm至3500nm的范围内。
如图1中所示出的，发射极层110可形成于基极层108之上。发射极层110可包含用以与基极层108形成异质结的任何适合的III-V族化合物半导体。举例而言，如果基极层108包含GaAs，则发射极层110可包含诸如AlGaAs的不同半导体材料。如果发射极层110及窗层106都包含AlGaAs，则发射极层110的AlxGa1-xAs组合物可与窗层106的AlyGa1-yAs组合物相同或不同。发射极层110可为单晶。发射极层110可为p型重掺杂(即，p+型掺杂)，且对于一些实施方式，p+型掺杂发射极层的掺杂浓度可为约1×1017cm-3至1×1020cm-3的范围内(例如，如所示的1×1019cm-3)。举例而言，发射极层110的厚度可为约300nm。基极层108及发射极层110的组合可形成用以吸收光子的吸收层。对于一些实施方式，吸收层的厚度可小于800nm，或甚至小于500nm。
n型掺杂基极层与p+型掺杂发射极层的接触产生p-n层112。当光在p-n层112附近被吸收以产生电子空穴对时，内建电场可迫使空穴到p+型掺杂侧且迫使电子到n型掺杂侧。自由电荷的该位移导致两个层108、110之间的电压差，以使得电子流可在负载连接在耦接至这些层的端子两端时流动。
不同于如上所述的n型掺杂基极层108及p+型掺杂发射极层110，常规光伏半导体器件通常具有p型掺杂基极层及n+型掺杂发射极层。在常规器件中，由于载流子的扩散长度，基极层通常为p型掺杂。制造根据本发明的实施方式的较薄基极层允许改变n型掺杂基极层。与p型掺杂层内的空穴的迁移率相比，n型掺杂层内的电子的较高迁移率导致本发明的实施方式的n型掺杂基极层108的较低掺杂密度。
一旦形成发射极层110，就可在发射极层内形成空腔或凹槽114，这些空腔或凹槽114足够深以到达下伏基极层108。举例而言，通过使用光刻术将掩模应用于发射极层110，且使用任何适合的技术(例如湿式或干式蚀刻)移除发射极层110内的未由掩模覆盖的半导体材料，可形成这样的凹槽114。以此方式，可经由PV单元100的背面接近基极层108。
对于一些实施方式，可在发射极层110之上形成界面层116。界面层116可包含任何适合的III-V族化合物半导体，例如GaAs。界面层116可为p+型掺杂，且对于一些实施方式，p+型掺杂界面层116的掺杂浓度可为1×1019cm-3。举例而言，界面层116的厚度可为约300nm。
一旦在释放层104之上形成剩余外延层，薄释放层104就可例如经由使用含水HF的蚀刻而牺牲。以此方式，在外延层剥离(ELO)工艺期间，PV单元100的功能层(例如，窗层106、基极层108及发射极层110)可与缓冲层102及基底分离。
与常规太阳能单元相比，以此方式产生的PV单元具有相当薄的吸收层(例如，＜500nm)，而常规太阳能单元可为数微米厚。吸收层的厚度与PV单元内的暗电流电平成比例(即，吸收层越薄，暗电流越低)。暗电流为即使没有光子进入器件时也流过PV单元或其它类似感光性器件(例如，光电二极管)的小电流。该背景电流可作为热离子发射或其它效应的结果而存在。因为当暗电流在感光性半导体器件内减小时，开路电压(Voc)增加，所以对给定光强度而言，较薄的吸收层最可能导致较大的Voc，且因此导致增大的效率。只要吸收层能够捕集光，当吸收层的厚度减小时，效率增加。
吸收层的薄度可能不仅仅受薄膜技术能力及ELO的能力的限制。举例而言，效率随着吸收层的薄度增加而增加，但吸收层应足够厚以承载电流。然而，较高掺杂程度可允许电流流动，甚至在极薄的吸收层内流动。因此，可利用增加的掺杂来制造极薄的吸收层，并具有甚至更大的效率。常规PV器件可遭受体积重组效应，因此这样的常规器件并不在吸收层内使用高掺杂。当确定适当厚度时，也可考虑吸收层的薄层电阻。
不仅薄吸收层导致增大的效率，而且具有这样的薄吸收层的PV单元可比具有若干微米的厚度的常规太阳能电池更具可挠性。因此，根据本发明的实施方式的PV单元可比常规太阳能电池适于更大量的应用。
图2A至图2D示出根据本发明的实施方式的PV单元的基极层108及发射极层110的各种层堆栈剖面200a-d。图2A中的层堆栈剖面200a示出了如图1所示出的基极层108及发射极层110。对于一些实施方式，可在基极层108之上形成中间层202，且可在中间层之上形成发射极层110。中间层202可提供介于基极层108与发射极层110之间的更平缓过渡。
中间层202可为n型掺杂，n型重掺杂(即，n+型掺杂)或p+型掺杂的。举例而言，图2B示出包含n型AlGaAs的中间层202b。作为另一实例，图2C描绘包含n+型AlGaAs的中间层202c。作为又一实例，图2D描绘包含p+型GaAs的中间层202d。
在图1中，在基极层108与发射极层110之间的p-n层112为平坦的且未暴露于凹槽114内。换言之，图1的p-n层112可被视为仅具有二维几何形状的平面。如图3A及图3B所示，对于一些实施方式，可形成PV单元的半导体层以在基极层108与发射极层110之间产生偏移p-n层312。换言之，偏移p-n层312可被视为具有三维几何形状。偏移p-n层312可暴露于凹槽114内。
如图3A中所示出的，当如上所述形成凹槽114时，通过一直穿过发射极层110移除半导体材料且部分地进入基极层108内，可产生偏移p-n层312a。如图3B中所示出的，用以形成偏移p-n层312b的另一方法可包括在形成发射极层110之前，将掩模应用于基极层108。经由任何适合的技术(例如蚀刻)，可从被预期保留发射极层的基极层108的一部分(即，除凹槽114的期望位置外的其它位置)移除半导体材料。一旦在发射极层内形成发射极层110及凹槽114，所得到的偏移p-n层312b就具有比平坦p-n层112的表面面积更大的表面面积。
对于一些实施方式，在制造期间，可在PV单元的层内将掺杂程度精细调整。举例而言，图4示出具有发射极层110的PV单元400，该发射极层110具有精细调整的掺杂剖面，以使得掺杂浓度在Z方向上从p-n层112增加至发射极层110的顶部。
对于一些实施方式，发射极层110可包括多个层，且多个层可包括不同的组合物。举例而言，图5示出根据本发明的一个实施方式的PV单元500的半导体层，这些半导体层具有多个p+型AlGaAs发射极层，这些发射极层具有分级(graded)的铝(Al)含量(即，百分比)。在该示例性实施方式中，可在基极层108之上形成包含p+型GaAs而无任何铝的第一发射极层5101。可在第一个发射极层5101之上形成包含p+型Al0.1Ga0.9As的第二发射极层5102。然后，又可在第二发射极层5102之上形成包含p+型Al0.2Ga0.8As的第三发射极层5103及包含p+型Al0.3Ga0.7As的第四发射极层5104。具有这些分级的Al含量可避免结势垒。
示范性电接点
电接点可用以将PV单元100的半导体层耦接至导线，以便连接至其它PV单元且外部连接至负载。常规太阳能电池通常在电池的正面及背面上都具有接点。正面接点，尤其是较厚的正面接点产生阴影，在阴影处光无法到达下伏吸收层以转化为电能。因此，无法获得太阳能电池的效率潜力。因此，需要用以接触PV单元的半导体层而无需引入阴影的技术及装置。
图6示出根据本发明的一个实施方式的正处于PV单元100的背面上的半导体层的所有电接点。举例而言，可在凹槽114内形成n型接点602，以提供n型掺杂基极层108的界面；且可在界面层116之上形成p型接点604，以耦接至p+型掺杂发射极层110。p+型掺杂界面层116内的重掺杂可有助于制成欧姆接触。以此方式，通过在PV单元的正面上具有用以阻挡光且产生太阳能阴影的电接点而无需牺牲效率。
对接点602、604而言，发射极层110内的凹槽114及界面层116的剩余部分的图案可基于期望的薄层电阻。接点602、604的尺寸(例如，面积)与单个PV单元100的尺寸(例如，面积)相比可能极小。此外，接点602、604的图案可提供与局部缺陷及阴影相抵的内建容差(built-intolerance)。
接点602、604可包含诸如金属或金属合金的适合的导电材料。优选地，接点的材料不应在制造期间冲穿半导体层。包含金(Au)的传统接点通常具有该刺穿(spiking)问题。此外，背面接点的材料可优选地能够在相对低的金属化工艺温度(例如在150和200℃之间)下应用。举例而言，接点602、604可包含钯/锗(Pd/Ge)以符合这些设计目标。钯不与GaAs反应。
无论选择何种材料，接点602、604都可通过任何适合的方法制造在PV单元100上，这些方法例如是经由光致抗蚀剂的真空蒸发、光刻术、丝网印刷，或仅仅在已部分地用蜡或另一保护材料覆盖的PV单元的暴露部分上沉积。这些方法全部涉及一种系统，其中不需要接点的PV单元的部分被保护，而PV单元的其余部分则暴露于金属。在这些方法中，丝网印刷可能是最有成本效益的，其有助于降低所得到的PV器件的成本。
尽管所有接点602、604都处于PV单元100的背面上以减少太阳能阴影，但是当设计有效的PV单元时，暗电流及其随时间与温度的稳定性可能仍受关注。暴露的p-n层112可能为暗电流的源，且较大的凹槽114可为造成暗电流增加的原因。因此，可能需要较小的凹槽114。然而，在减小凹槽114的尺寸以减小暗电流以及在凹槽114内制造n型接点602而不接触侧壁的可能性之间，需做出取舍。
因此，对于一些实施方式，作为减小PV单元内的暗电流的另一方式，可钝化凹槽114的侧壁。图7示出根据本发明的一个实施方式在发射极层110内的凹槽114的侧壁(即，侧表面)上的钝化物702。使用任何适合的钝化方法，例如化学汽相沉积法(CVD)或电等离子体增强CVD(PECVD)，可在形成n型接点602前或可能在形成n型接点602后将侧壁钝化。钝化物702可包含任何适合的不导电材料，例如氮化硅(SiN)、SiOx、TiOx、TaOx、硫化锌(ZnS)或其任何组合。
示范性光捕集
为了获得效率，理想光伏(PV)器件的吸收层将吸收所有碰撞在PV器件面向光源的正面上的光子，因为开路电压(Voc)或短路电流(Isc)与光强度成比例。然而，若干损耗机制通常干扰PV器件的吸收层，该吸收层察见(seeing)或吸收所有到达器件的正面的光。举例而言，PV器件的半导体层可为有光泽的(尤其是当由纯硅制成时)，且因此可反射碰撞光子的相当大的一部分，阻止这些光子到达吸收层。如果两个半导体层(例如，窗层及基极层)具有不同的折射率，则到达这两个层之间的界面的一些光子(如果这些光子的入射角度过高)可能根据斯涅尔定律(Snell’s Law)被反射，再次阻止使这些光子到达吸收层。此外，吸收层可不吸收所有的碰撞光子；一些光子可穿过吸收层而不影响任何电子空穴对。
因此，需要一种技术及装置，其用以捕获碰撞在PV器件的正面上的光，以使得尽可能多的光子可由吸收层吸收且转化为电能。以此方式，可增加该PV器件的效率。
用以在PV器件的半导体层内捕集光的装置可分为两个类别：正面光捕集及背面光捕集。通过在PV器件内使用两种类型的光捕集，思想是：几乎所有碰撞在PV器件的正面上的光子都可被捕获且在半导体层内“四处弹跳”直至光子由吸收层所吸收且转化为电能。
示范性正面光捕集
图8示出根据本发明的一个实施方式的抗反射(AR)涂层802，其被布置成与PV单元100的正面上的窗层106邻接。根据其目的，AR涂层802可包含允许光穿过同时阻止光自其表面反射的任何适合的材料。举例而言，AR涂层802可包含氟化镁(MgF2)、硫化锌(ZnS)、氮化硅(SiN)、二氧化钛(TiO2)、二氧化硅(SiO2)或其任何组合。AR涂层802可通过任何适合的技术(例如，溅镀)涂覆到窗层106。
对于一些实施方式，在涂覆抗反射涂层802之前，窗层106可被粗糙化或纹理化。图9示出经粗糙化的窗层106。举例而言，窗层106的粗糙化可通过湿式蚀刻或干式蚀刻来完成。纹理化可通过在涂覆AR涂层802之前将小粒子(例如，聚苯乙烯球体)涂覆至窗层106的表面来实现。通过将窗层106粗糙化或纹理化，可在AR涂层802与窗层(这些层可具有不同的折射率)之间的界面处提供不同的角度。以此方式，因为根据斯涅尔定律一些光子的入射角度过高，所以可使更多的入射光子透射至窗层106中，而不是从AR涂层802与窗层之间的界面反射。因此，将窗层106粗糙化或纹理化可提供更多的光捕集。
同样对于一些实施方式，窗层106可包含多个窗层。如图10中所示出的，对于这些实施方式，在涂覆抗反射涂层802之前，可如上所述将最外面的窗层(即，最靠近PV单元100的正面的窗层)粗糙化或纹理化。在图10中，窗层106包含被布置成与基极层108邻接的第一窗层1002及插入第一窗层1002与抗反射涂层802之间的第二窗层1004。第一窗层1002及第二窗层1004可包含如上所述的适于窗层106的任何材料，例如AlGaAs，但通常使用不同的组合物。举例而言，第一窗层1002可包含Al0.3Ga0.7As，且第二窗层1004可包含Al0.1Ga0.9As。此外，对于一些实施方式，多个窗层中的一些可为掺杂的，而其它可为未经掺杂的。举例而言，第一窗层1002可为掺杂的，且第二窗层1004可为未经掺杂的。
示范性背面光捕集
对于一些实施方式，可如上面关于正面所述的将PV单元100的背面上的发射极层110粗糙化或纹理化，以便增加光捕集。图11示出这样的经粗糙化的发射极层110。
图12示出在PV单元100的背面上的漫射体1202，目的是增加由吸收层捕捉获的光的量。漫射体1202的目的是漫射或散射穿过吸收层而不被吸收的光子，而不是类似于反射镜(其中反射角度与入射角度相等)来反射光子。对于一些实施方式，漫射体1202可由反射层1204覆盖。以此方式，漫射体1202可对入射光子提供新的角度，其中一些入射光子可被重定向回PV单元内部。对于被定向至PV单元的背面的其它光子，反射层1204可将这些光子重定向回而穿过漫射体1202且朝向PV单元的内部。尽管当光子被散射且被重定向到内部时，一些光可由漫射体1202所吸收，但是大部分光被重定向至吸收层以被吸收且转化为电能，从而增加效率。无漫射体及反射层的常规PV器件可能不能再捕获到达器件的背面而最初未由吸收层所吸收的光子。
如图13中所示出的，对于一些实施方式，漫射体1202可包含介电粒子1302。介电粒子可包含电绝缘且不吸收光的任何适合的材料。介电粒子1302的直径可在约0.2至2.0μm的范围内。介电粒子1302可由白色涂料1304覆盖，该白色涂料反射光且可担当用于将光子重定向回PV单元100的内部的反射层。举例而言，白色涂料1304可包含TiO2。
如图14中所示出的，对于一些实施方式，漫射体1202可包含金属粒子1402。金属粒子1402可反射未由吸收层所吸收的光子，且由于具有大量金属粒子1402，光子可在重定向至PV单元100的内部之前，在不同方向上散射若干次。金属粒子1402的直径可为约150至200nm，充当相对紧凑的散射体。由于在漫射体1202内的较薄粒子，可保持PV单元100的厚度较小，从而维持PV单元100的期望可挠性。
因为金属粒子1402导电，所以可钝化界面层116的侧表面以阻止金属粒子1402与器件操作相干扰。界面层116可使用任何适合的钝化方法例如化学汽相沉积法(CVD)或等离子体增强CVD法(PECVD)来钝化。钝化物1404可包含任何适合的不导电材料，例如氮化硅(SiN)、SiOx、TiOx、TaOx、硫化锌(ZnS)或其任何组合。此外，如在图14中所描绘的，对于一些实施方式，可在金属粒子1402之上形成介电层1406，以便避免使接点602、604形成分路。介电层1406可包含任何适合的电绝缘材料，例如SiO2、SiN或玻璃。
示范性集成
图15A示出PV单元100的背面，其中所有接点602、604都布置在背面上。如上所述，n型接点602可位于发射极层110内的凹槽114内。PV单元100的宽度w可为约2至3cm，且长度l可为约10cm。
图15B示出图15A的PV单元100的等效电路1500。可认为PV单元100在每个n型接点602与p型接点604之间具有有效的微型太阳能电池1502。在PV单元100内，将所有n型接点602耦接至同一基极层108，且将所有p型接点604耦接至同一发射极层110。因此，等效电路1500的开路电压(Voc)可被模型化为在串联的微型太阳能电池1502两端的开路电压的总和，且短路电流(Isc)可被模型化为在并联的微型太阳能电池1502两端的短路电流的总和。本质上，PV单元100的等效电路1500可被视为单个太阳能电池，其与构成该单个太阳能电池的那些微型太阳能电池1502相比，具有较大的Voc及较大的Isc。
图16示出根据本发明的一个实施方式的用以形成PV组1600的多个PV单元100之间的p型接点604及n型接点的互连。对于一些实施方式，PV组1600可包含具有约10个并联布置的PV单元100的一列。以此方式，PV组1600的短路电流(Isc)可大于单个PV单元100的短路电流约十倍。
根据某种图案，经由在PV单元100之间放置的薄条带1602、1604来完成互连。举例而言，条带1604可将第一PV单元1001的p型接点604连接至第二PV单元1002的p型接点604。如图16中所示出的，对于n型接点，条带1602可将第二PV单元1002的n型接点602连接至第三PV单元1003的n型接点602，而不是将第一PV单元1001连接至第二PV单元1002。在PV组1600内，可选择该互连图案以提供相当大的可挠性。
条带1602、1604可包含诸如金属或金属合金的任何适合的导电材料。举例而言，条带1602、1604可包含镀锡铜。对于一些实施方式，与用于p型接点604的条带1604相比，用于n型接点的条带1602可包含不同的材料。举例而言，为了形成由金属或金属合金制成的条带，可经由丝网印刷，横跨接点602、604的“点几何形状”将条带应用于PV单元100的背面。
对金属或金属合金进行丝网印刷可暗示高工艺温度。因此，对于一些实施方式，条带1602、1604可能包含导电聚合物以替代金属或金属合金。可在比丝网印制金属所建议的温度低的温度下经由丝网印刷来形成导电聚合物条带。
在PV组1600上，在相邻的PV单元100之间的间隔可为约1至2mm。该相对紧密的间隔也可允许在PV组1600内的较大可挠性，尤其是当与为此目的选择的互连图案(例如，如上所述的互连图案)组合时。
图17示出根据本发明的一个实施方式以阵列布置以形成PV模块1700的多个PV组1600的互连。在一行中的相邻的PV组1600可由联接器1702连接在一起。联接器1702可将一个PV组的n型接点602连接至在该行内的一个相邻的PV组的p型接点604，以使得一行中的PV组1600(及等效电路)串联连接，从而合并PV组1600的开路电压(Voc)能力。联接器1702可包含金属、金属合金或导电聚合物的丝线或条带，其类似于PV组1600内的条带1602、1604。
联接器1702也可将在PV组1600的每行上的p型接点604连接至PV模块1700的一侧上的p侧汇流条1704，且将PV组1600的每行上的n型接点602连接至PV模块1700的另一侧上的n侧汇流条1706。以此方式，可并联连接数行串接的PV组1600，从而合并PV组1600的短路电流(Isc)能力。汇流条1704、1706可以是相对厚的，以便将PV组1600产生的相当大的电流传送至负载(未示出)。对于一些实施方式，可将模块1700的DC输出电压(Voc)耦接至逆变器以便产生AC电压。
可封装所完成的PV模块1700。PV模块1700的正面可由包含例如玻璃或塑料的透明薄片覆盖。模块的长度L可约为1m，如图16中所示出的，其具有PV组1600的4×4阵列。
通过使用条带1602、1604连接PV单元100以形成PV组1600且通过使PV组1600与联接器1702集成以形成PV模块1700，PV模块1700可具有与局部缺陷相抵的内建容差。换言之，对PV单元100局部化的缺陷(例如，在n型接点602与p型接点604之间的分路)不需导致模块1700失效。此外，可添加宏观和/或微观级别的保护装置。换言之，可将诸如保险丝的保护添加至一个或多个PV组1600和/或添加至PV模块1700。对于一些实施方式，保护电路可以在晶片级建于PV单元100内。
尽管上文针对本发明的实施方式，但是可设计本发明的其它及另外的实施方式而不偏离其基本范围，且其范围由随后的权利要求确定。

Claims (36)

1.一种光伏(PV)器件，包括：
p+型掺杂层；
n型掺杂层，其布置在所述p+型掺杂层之上以形成p-n层，以使得当光由所述p-n层所吸收时产生电能；
窗层，其布置在所述n型掺杂层之上；
抗反射涂层，其布置在所述窗层之上；以及
漫射体，其布置在所述p+型掺杂层之下。
2.如权利要求1所述的PV器件，其中所述漫射体包括多个介电粒子。
3.如权利要求2所述的PV器件，其中所述多个介电粒子由白色涂料覆盖。
4.如权利要求3所述的PV器件，其中所述白色涂料包含TiO2。
5.如权利要求2所述的PV器件，其中所述介电粒子的直径为约0.2至2.0μm。
6.如权利要求1所述的PV器件，其中所述漫射体包含多个金属粒子。
7.如权利要求6所述的PV器件，其中所述金属粒子的直径为约150至200nm。
8.如权利要求6所述的PV器件，还包括布置在所述金属粒子之下的介电层。
9.如权利要求8所述的PV器件，其中所述介电层包含SiO2、SiN或玻璃。
10.如权利要求1所述的PV器件，还包括布置在所述漫射体之下的反射层。
11.如权利要求1所述的PV器件，其中所述窗层包含AlGaAs。
12.如权利要求1所述的PV器件，其中所述抗反射涂层包含MgF2、ZnS、SiN、TiO2、SiO2及其任何组合。
13.如权利要求1所述的PV器件，其中与所述抗反射涂层邻接的所述窗层的表面已经被粗糙化，以为增加的光捕集提供不同角度。
14.如权利要求1所述的PV器件，还包括插入所述窗层与所述抗反射涂层之间的粒子，以为增加的光捕集提供不同角度。
15.如权利要求14所述的PV器件，其中所述粒子包含聚苯乙烯球体。
16.如权利要求1所述的PV器件，其中所述窗层包括：
第一窗层，其布置在所述n型掺杂层之上；以及
第二窗层，其布置在所述第一窗层之上。
17.如权利要求16所述的PV器件，其中所述第一窗层及所述第二窗层包含AlGaAs，但具有不同组合物。
18.如权利要求16所述的PV器件，其中所述第一窗层是掺杂的，而所述第二窗层是未掺杂的。
19.如权利要求16所述的PV器件，其中与所述抗反射涂层邻接的所述第二窗层的表面已经被粗糙化，以为增加的光捕集提供不同角度。
20.如权利要求16所述的PV器件，还包括插入所述窗层与所述抗反射涂层之间的粒子，以为增加的光捕集提供不同角度。
21.如权利要求1所述的PV器件，其中所述p+型掺杂层的底部表面已被粗糙化，以为增加的光捕集提供不同角度。
22.如权利要求1所述的PV器件，还包括布置在所述p+型掺杂层之下的粒子，以为增加的光捕集提供不同角度。
23.如权利要求22所述的PV器件，其中所述粒子包含聚苯乙烯球体。
24.如权利要求1所述的PV器件，还包括用于外部连接的多个接点，所述接点耦接至所述n型掺杂层及所述p+型掺杂层，以使得用于外部连接的所述接点布置在所述p-n层之下，且不会阻挡光穿过所述抗反射涂层及所述窗层而到达所述p-n层。
25.如权利要求24所述的PV器件，其中所述多个接点包括：
多个n型接点，其耦接至所述n型掺杂层；以及
多个p型接点，其耦接至所述p+型掺杂层。
26.如权利要求25所述的PV器件，其中所述多个n型接点布置在所述p+型掺杂层中的凹槽内，所述多个p型接点布置在所述p+型掺杂层之下。
27.如权利要求26所述的PV器件，其中所述p+型掺杂层中的所述凹槽的侧表面是经钝化的。
28.如权利要求25所述的PV器件，还包括插入所述p+型掺杂层与所述多个p型接点之间的界面层。
29.如权利要求28所述的PV器件，其中所述界面层包含p+型GaAs。
30.如权利要求24所述的PV器件，其中所述多个接点包含Pd-Ge。
31.如权利要求1所述的PV器件，还包括插入所述n型掺杂层与所述p+型掺杂层之间的中间层。
32.如权利要求1所述的PV器件，其中在所述n型掺杂层和所述p+型掺杂层之间形成的所述p-n层是偏移p-n层。
33.如权利要求1所述的PV器件，其中所述p+型掺杂层具有精细调整的掺杂剖面以使得掺杂程度从所述p+型掺杂层的一侧至另一侧增加。
34.如权利要求1所述的PV器件，其中所述n型掺杂层或所述p+型掺杂层包含单晶III-V族半导体。
35.如权利要求1所述的PV器件，其中所述n型掺杂层包含n型GaAs。
36.如权利要求1所述的PV器件，其中所述p+型掺杂层包含p+型AlGaAs。
CN2009801515411A 2008-10-23 2009-10-23 光伏器件 Pending CN102257637A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10795408P 2008-10-23 2008-10-23
US61/107,954 2008-10-23
PCT/US2009/061898 WO2010048537A2 (en) 2008-10-23 2009-10-23 Photovoltaic device

Publications (1)

Publication Number Publication Date
CN102257637A true CN102257637A (zh) 2011-11-23

Family

ID=42120001

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009801515411A Pending CN102257637A (zh) 2008-10-23 2009-10-23 光伏器件

Country Status (6)

Country Link
US (5) US8937244B2 (zh)
EP (1) EP2351097A2 (zh)
KR (1) KR20110086098A (zh)
CN (1) CN102257637A (zh)
TW (1) TW201030998A (zh)
WO (1) WO2010048537A2 (zh)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017067413A1 (zh) * 2015-10-19 2017-04-27 北京汉能创昱科技有限公司 太阳能电池片、其制备方法及其组成的太阳能电池组
CN108155108A (zh) * 2017-12-27 2018-06-12 中国科学院长春光学精密机械与物理研究所 一种氧化锌紫外探测器的封装方法及封装结构
CN108172663A (zh) * 2017-12-27 2018-06-15 中国科学院长春光学精密机械与物理研究所 一种ZnMgO日盲紫外探测器的封装方法及封装结构
CN108565315A (zh) * 2014-08-05 2018-09-21 奥塔装置公司 具有纹理化前表面和/或背表面的薄膜半导体光电器件
US11038080B2 (en) 2012-01-19 2021-06-15 Utica Leaseco, Llc Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from etching
CN116137306A (zh) * 2023-04-18 2023-05-19 南昌凯捷半导体科技有限公司 一种Micro-LED芯片及其制作方法

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8772628B2 (en) 2004-12-30 2014-07-08 Alliance For Sustainable Energy, Llc High performance, high bandgap, lattice-mismatched, GaInP solar cells
US20100012175A1 (en) * 2008-07-16 2010-01-21 Emcore Solar Power, Inc. Ohmic n-contact formed at low temperature in inverted metamorphic multijunction solar cells
US20120104460A1 (en) * 2010-11-03 2012-05-03 Alta Devices, Inc. Optoelectronic devices including heterojunction
WO2010048547A2 (en) * 2008-10-23 2010-04-29 Alta Devices, Inc. Photovoltaic device with increased light trapping
EP2345088A2 (en) * 2008-10-23 2011-07-20 Alta Devices, Inc. Integration of a photovoltaic device
TW201029195A (en) * 2008-10-23 2010-08-01 Alta Devices Inc Photovoltaic device with back side contacts
TW201030998A (en) 2008-10-23 2010-08-16 Alta Devices Inc Photovoltaic device
WO2010048543A2 (en) * 2008-10-23 2010-04-29 Alta Devices, Inc. Thin absorber layer of a photovoltaic device
US9691921B2 (en) 2009-10-14 2017-06-27 Alta Devices, Inc. Textured metallic back reflector
US20150380576A1 (en) 2010-10-13 2015-12-31 Alta Devices, Inc. Optoelectronic device with dielectric layer and method of manufacture
US9502594B2 (en) 2012-01-19 2016-11-22 Alta Devices, Inc. Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from template layer and etching
US9768329B1 (en) 2009-10-23 2017-09-19 Alta Devices, Inc. Multi-junction optoelectronic device
US20170141256A1 (en) 2009-10-23 2017-05-18 Alta Devices, Inc. Multi-junction optoelectronic device with group iv semiconductor as a bottom junction
US11271128B2 (en) 2009-10-23 2022-03-08 Utica Leaseco, Llc Multi-junction optoelectronic device
US20120103406A1 (en) 2010-11-03 2012-05-03 Alta Devices, Inc. Metallic contacts for photovoltaic devices and low temperature fabrication processes thereof
KR101234056B1 (ko) * 2011-05-16 2013-02-15 주식회사 석원 씨아이지에스 박막 태양전지의 증착 공정
US20120305059A1 (en) * 2011-06-06 2012-12-06 Alta Devices, Inc. Photon recycling in an optoelectronic device
US9397238B2 (en) 2011-09-19 2016-07-19 First Solar, Inc. Method of etching a semiconductor layer of a photovoltaic device
US20130081681A1 (en) * 2011-10-03 2013-04-04 Epistar Corporation Photovoltaic device
US9018517B2 (en) 2011-11-07 2015-04-28 International Business Machines Corporation Silicon heterojunction photovoltaic device with wide band gap emitter
JP5851872B2 (ja) * 2012-02-10 2016-02-03 シャープ株式会社 化合物半導体太陽電池の製造方法
US9379261B2 (en) * 2012-08-09 2016-06-28 The Board Of Trustees Of The Leland Stanford Junior University Ultra thin film nanostructured solar cell
US9590131B2 (en) 2013-03-27 2017-03-07 Alliance For Sustainable Energy, Llc Systems and methods for advanced ultra-high-performance InP solar cells
NL2014040B1 (en) * 2014-12-23 2016-10-12 Stichting Energieonderzoek Centrum Nederland Method of making a curent collecting grid for solar cells.
US9865761B1 (en) * 2016-05-04 2018-01-09 The United States Of America, As Represented By The Secretary Of The Navy Emitter-less, back-surface alternating-contact solar cell
US9842957B1 (en) * 2016-05-04 2017-12-12 The United States Of America, As Represented By The Secretary Of The Navy AlGaAs/GaAs solar cell with back-surface alternating contacts (GaAs BAC solar cell)
CN109473487B (zh) * 2018-12-25 2024-04-02 嘉兴尚能光伏材料科技有限公司 基于复合陷光结构的晶体硅太阳电池及其制备方法
US11658256B2 (en) * 2019-12-16 2023-05-23 Solaero Technologies Corp. Multijunction solar cells
CN113328009A (zh) * 2021-05-28 2021-08-31 扬州乾照光电有限公司 一种太阳能电池的制作方法

Family Cites Families (130)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615853A (en) 1970-01-28 1971-10-26 Nasa Solar cell panels with light-transmitting plate
JPS5758075B2 (zh) * 1974-10-19 1982-12-08 Sony Corp
US4017332A (en) * 1975-02-27 1977-04-12 Varian Associates Solar cells employing stacked opposite conductivity layers
US3988167A (en) * 1975-03-07 1976-10-26 Rca Corporation Solar cell device having improved efficiency
US3990101A (en) * 1975-10-20 1976-11-02 Rca Corporation Solar cell device having two heterojunctions
US4107723A (en) * 1977-05-02 1978-08-15 Hughes Aircraft Company High bandgap window layer for GaAs solar cells and fabrication process therefor
US4094704A (en) * 1977-05-11 1978-06-13 Milnes Arthur G Dual electrically insulated solar cells
FR2404307A1 (fr) * 1977-09-27 1979-04-20 Centre Nat Etd Spatiales Cellules solaires a double heterojonction et dispositif de montage
US4197141A (en) * 1978-01-31 1980-04-08 Massachusetts Institute Of Technology Method for passivating imperfections in semiconductor materials
US4410758A (en) * 1979-03-29 1983-10-18 Solar Voltaic, Inc. Photovoltaic products and processes
US4295002A (en) * 1980-06-23 1981-10-13 International Business Machines Corporation Heterojunction V-groove multijunction solar cell
US4444992A (en) * 1980-11-12 1984-04-24 Massachusetts Institute Of Technology Photovoltaic-thermal collectors
US4338480A (en) * 1980-12-29 1982-07-06 Varian Associates, Inc. Stacked multijunction photovoltaic converters
US4385198A (en) * 1981-07-08 1983-05-24 The United States Of America As Represented By The Secretary Of The Air Force Gallium arsenide-germanium heteroface junction device
US4400221A (en) * 1981-07-08 1983-08-23 The United States Of America As Represented By The Secretary Of The Air Force Fabrication of gallium arsenide-germanium heteroface junction device
US4571448A (en) 1981-11-16 1986-02-18 University Of Delaware Thin film photovoltaic solar cell and method of making the same
US4419533A (en) * 1982-03-03 1983-12-06 Energy Conversion Devices, Inc. Photovoltaic device having incident radiation directing means for total internal reflection
US4479027A (en) * 1982-09-24 1984-10-23 Todorof William J Multi-layer thin-film, flexible silicon alloy photovoltaic cell
US4497974A (en) * 1982-11-22 1985-02-05 Exxon Research & Engineering Co. Realization of a thin film solar cell with a detached reflector
JPS59147469A (ja) 1983-02-14 1984-08-23 Hitachi Ltd 非晶質シリコン太陽電池
US4582952A (en) * 1984-04-30 1986-04-15 Astrosystems, Inc. Gallium arsenide phosphide top solar cell
US4633030A (en) * 1985-08-05 1986-12-30 Holobeam, Inc. Photovoltaic cells on lattice-mismatched crystal substrates
US4667059A (en) * 1985-10-22 1987-05-19 The United States Of America As Represented By The United States Department Of Energy Current and lattice matched tandem solar cell
JPS63160384A (ja) 1986-12-24 1988-07-04 Mitsubishi Electric Corp ＧａＡｓ太陽電池の製造方法
JPS63211775A (ja) 1987-02-27 1988-09-02 Mitsubishi Electric Corp 化合物半導体太陽電池
JP2732524B2 (ja) * 1987-07-08 1998-03-30 株式会社日立製作所 光電変換デバイス
US5116427A (en) * 1987-08-20 1992-05-26 Kopin Corporation High temperature photovoltaic cell
US4889656A (en) * 1987-10-30 1989-12-26 Minnesota Mining And Manufacturing Company Perfluoro(cycloaliphatic methyleneoxyalkylene) carbonyl fluorides and derivatives thereof
US4989059A (en) * 1988-05-13 1991-01-29 Mobil Solar Energy Corporation Solar cell with trench through pn junction
JPH02135786A (ja) * 1988-11-16 1990-05-24 Mitsubishi Electric Corp 太陽電池セル
US5103268A (en) 1989-03-30 1992-04-07 Siemens Solar Industries, L.P. Semiconductor device with interfacial electrode layer
US5217539A (en) * 1991-09-05 1993-06-08 The Boeing Company III-V solar cells and doping processes
US5101260A (en) 1989-05-01 1992-03-31 Energy Conversion Devices, Inc. Multilayer light scattering photovoltaic back reflector and method of making same
US5136351A (en) 1990-03-30 1992-08-04 Sharp Kabushiki Kaisha Photovoltaic device with porous metal layer
JP2722761B2 (ja) 1990-04-02 1998-03-09 日立電線株式会社 ＧａＡｓ系太陽電池
US5223043A (en) * 1991-02-11 1993-06-29 The United States Of America As Represented By The United States Department Of Energy Current-matched high-efficiency, multijunction monolithic solar cells
US5385960A (en) * 1991-12-03 1995-01-31 Rohm And Haas Company Process for controlling adsorption of polymeric latex on titanium dioxide
US5356488A (en) 1991-12-27 1994-10-18 Rudolf Hezel Solar cell and method for its manufacture
US5465009A (en) 1992-04-08 1995-11-07 Georgia Tech Research Corporation Processes and apparatus for lift-off and bonding of materials and devices
US5330585A (en) 1992-10-30 1994-07-19 Spectrolab, Inc. Gallium arsenide/aluminum gallium arsenide photocell including environmentally sealed ohmic contact grid interface and method of fabricating the cell
US5342453A (en) * 1992-11-13 1994-08-30 Midwest Research Institute Heterojunction solar cell
US5316593A (en) * 1992-11-16 1994-05-31 Midwest Research Institute Heterojunction solar cell with passivated emitter surface
EP0617303A1 (en) 1993-03-19 1994-09-28 Akzo Nobel N.V. A method of integrating a semiconductor component with a polymeric optical waveguide component, and an electro-optical device comprising an integrated structure so attainable
US5376185A (en) * 1993-05-12 1994-12-27 Midwest Research Institute Single-junction solar cells with the optimum band gap for terrestrial concentrator applications
US5468652A (en) * 1993-07-14 1995-11-21 Sandia Corporation Method of making a back contacted solar cell
JP3646940B2 (ja) 1994-11-01 2005-05-11 松下電器産業株式会社 太陽電池
US6166218A (en) * 1996-11-07 2000-12-26 Ciba Specialty Chemicals Corporation Benzotriazole UV absorbers having enhanced durability
EP0911884B1 (en) * 1997-10-27 2005-02-09 Sharp Kabushiki Kaisha Photoelectric converter and method of manufacturing the same
US6231931B1 (en) * 1998-03-02 2001-05-15 John S. Blazey Method of coating a substrate with a structural polymer overlay
US6166318A (en) * 1998-03-03 2000-12-26 Interface Studies, Inc. Single absorber layer radiated energy conversion device
US6278054B1 (en) * 1998-05-28 2001-08-21 Tecstar Power Systems, Inc. Solar cell having an integral monolithically grown bypass diode
US6103970A (en) * 1998-08-20 2000-08-15 Tecstar Power Systems, Inc. Solar cell having a front-mounted bypass diode
EP0993052B1 (en) * 1998-09-28 2009-01-14 Sharp Kabushiki Kaisha Space solar cell
US6150603A (en) * 1999-04-23 2000-11-21 Hughes Electronics Corporation Bilayer passivation structure for photovoltaic cells
JP3619053B2 (ja) 1999-05-21 2005-02-09 キヤノン株式会社 光電変換装置の製造方法
JP2001127326A (ja) * 1999-08-13 2001-05-11 Oki Electric Ind Co Ltd 半導体基板及びその製造方法、並びに、この半導体基板を用いた太陽電池及びその製造方法
US6858462B2 (en) 2000-04-11 2005-02-22 Gratings, Inc. Enhanced light absorption of solar cells and photodetectors by diffraction
US6368929B1 (en) * 2000-08-17 2002-04-09 Motorola, Inc. Method of manufacturing a semiconductor component and semiconductor component thereof
CA2437124A1 (en) * 2001-02-09 2002-08-22 Midwest Research Institute Isoelectronic co-doping
US20030070707A1 (en) * 2001-10-12 2003-04-17 King Richard Roland Wide-bandgap, lattice-mismatched window layer for a solar energy conversion device
US6864414B2 (en) * 2001-10-24 2005-03-08 Emcore Corporation Apparatus and method for integral bypass diode in solar cells
US20070137698A1 (en) * 2002-02-27 2007-06-21 Wanlass Mark W Monolithic photovoltaic energy conversion device
US8067687B2 (en) * 2002-05-21 2011-11-29 Alliance For Sustainable Energy, Llc High-efficiency, monolithic, multi-bandgap, tandem photovoltaic energy converters
TW538481B (en) * 2002-06-04 2003-06-21 Univ Nat Cheng Kung InGaP/AlGaAs/GaAs hetero-junction bipolar transistor with zero conduction band discontinuity
US20060162767A1 (en) * 2002-08-16 2006-07-27 Angelo Mascarenhas Multi-junction, monolithic solar cell with active silicon substrate
AU2003297649A1 (en) 2002-12-05 2004-06-30 Blue Photonics, Inc. High efficiency, monolithic multijunction solar cells containing lattice-mismatched materials and methods of forming same
JP2004193350A (ja) 2002-12-11 2004-07-08 Sharp Corp 太陽電池セルおよびその製造方法
US7812249B2 (en) 2003-04-14 2010-10-12 The Boeing Company Multijunction photovoltaic cell grown on high-miscut-angle substrate
US8664525B2 (en) * 2003-05-07 2014-03-04 Imec Germanium solar cell and method for the production thereof
US7038250B2 (en) 2003-05-28 2006-05-02 Kabushiki Kaisha Toshiba Semiconductor device suited for a high frequency amplifier
US7659475B2 (en) 2003-06-20 2010-02-09 Imec Method for backside surface passivation of solar cells and solar cells with such passivation
CN101459203B (zh) 2003-09-09 2011-06-15 旭化成电子材料元件株式会社 红外线传感器ic、红外线传感器及其制造方法
WO2005081324A1 (ja) 2004-02-20 2005-09-01 Sharp Kabushiki Kaisha 光電変換装置用基板、光電変換装置、積層型光電変換装置
US7994420B2 (en) 2004-07-07 2011-08-09 Saint-Gobain Glass France Photovoltaic solar cell and solar module
US7566948B2 (en) * 2004-10-20 2009-07-28 Kopin Corporation Bipolar transistor with enhanced base transport
JP4959127B2 (ja) * 2004-10-29 2012-06-20 三菱重工業株式会社 光電変換装置及び光電変換装置用基板
US7375378B2 (en) * 2005-05-12 2008-05-20 General Electric Company Surface passivated photovoltaic devices
US11211510B2 (en) 2005-12-13 2021-12-28 The Boeing Company Multijunction solar cell with bonded transparent conductive interlayer
KR20070063731A (ko) 2005-12-15 2007-06-20 엘지전자 주식회사 나노 패턴이 형성된 기판의 제조방법 및 그 기판을 이용한발광소자
US10069026B2 (en) * 2005-12-19 2018-09-04 The Boeing Company Reduced band gap absorber for solar cells
US7863157B2 (en) 2006-03-17 2011-01-04 Silicon Genesis Corporation Method and structure for fabricating solar cells using a layer transfer process
US20070277874A1 (en) * 2006-05-31 2007-12-06 David Francis Dawson-Elli Thin film photovoltaic structure
US8937243B2 (en) 2006-10-09 2015-01-20 Solexel, Inc. Structures and methods for high-efficiency pyramidal three-dimensional solar cells
JP4986138B2 (ja) 2006-11-15 2012-07-25 独立行政法人産業技術総合研究所 反射防止構造を有する光学素子用成形型の製造方法
US20080128020A1 (en) 2006-11-30 2008-06-05 First Solar, Inc. Photovoltaic devices including a metal stack
US20080245409A1 (en) * 2006-12-27 2008-10-09 Emcore Corporation Inverted Metamorphic Solar Cell Mounted on Flexible Film
JP2008181965A (ja) 2007-01-23 2008-08-07 Sharp Corp 積層型光電変換装置及びその製造方法
WO2008100603A1 (en) 2007-02-15 2008-08-21 Massachusetts Institute Of Technology Solar cells with textured surfaces
US20100006143A1 (en) * 2007-04-26 2010-01-14 Welser Roger E Solar Cell Devices
EP1993143A1 (de) 2007-05-14 2008-11-19 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiterbauelement, Verfahren zu dessen Herstellung und dessen Verwendung
US8852467B2 (en) 2007-05-31 2014-10-07 Nthdegree Technologies Worldwide Inc Method of manufacturing a printable composition of a liquid or gel suspension of diodes
US7875945B2 (en) 2007-06-12 2011-01-25 Guardian Industries Corp. Rear electrode structure for use in photovoltaic device such as CIGS/CIS photovoltaic device and method of making same
US20120125256A1 (en) 2007-10-06 2012-05-24 Solexel, Inc. Apparatus and method for repeatedly fabricating thin film semiconductor substrates using a template
US8198528B2 (en) 2007-12-14 2012-06-12 Sunpower Corporation Anti-reflective coating with high optical absorption layer for backside contact solar cells
US8193609B2 (en) * 2008-05-15 2012-06-05 Triquint Semiconductor, Inc. Heterojunction bipolar transistor device with electrostatic discharge ruggedness
US8871619B2 (en) 2008-06-11 2014-10-28 Intevac, Inc. Application specific implant system and method for use in solar cell fabrications
US8309446B2 (en) 2008-07-16 2012-11-13 Applied Materials, Inc. Hybrid heterojunction solar cell fabrication using a doping layer mask
WO2010032933A2 (en) 2008-09-16 2010-03-25 Lg Electronics Inc. Solar cell and texturing method thereof
WO2010036805A2 (en) 2008-09-24 2010-04-01 Massachusetts Institute Of Technology Photon processing with nanopatterned materials
US8866005B2 (en) * 2008-10-17 2014-10-21 Kopin Corporation InGaP heterojunction barrier solar cells
TW201029195A (en) * 2008-10-23 2010-08-01 Alta Devices Inc Photovoltaic device with back side contacts
WO2010048547A2 (en) * 2008-10-23 2010-04-29 Alta Devices, Inc. Photovoltaic device with increased light trapping
TW201030998A (en) 2008-10-23 2010-08-16 Alta Devices Inc Photovoltaic device
WO2010048543A2 (en) * 2008-10-23 2010-04-29 Alta Devices, Inc. Thin absorber layer of a photovoltaic device
EP2345088A2 (en) * 2008-10-23 2011-07-20 Alta Devices, Inc. Integration of a photovoltaic device
US20130288418A1 (en) 2008-11-13 2013-10-31 Solexel, Inc. Method for fabricating a three-dimensional thin-film semiconductor substrate from a template
US20100132774A1 (en) * 2008-12-11 2010-06-03 Applied Materials, Inc. Thin Film Silicon Solar Cell Device With Amorphous Window Layer
US9059422B2 (en) 2009-02-03 2015-06-16 Kaneka Corporation Substrate with transparent conductive film and thin film photoelectric conversion device
DE102009011306A1 (de) 2009-03-02 2010-09-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Beidseitig kontaktierte Solarzellen sowie Verfahren zu deren Herstellung
US8664515B2 (en) 2009-03-16 2014-03-04 National Cheng Kung University Solar concentrator
US9099584B2 (en) 2009-04-24 2015-08-04 Solexel, Inc. Integrated three-dimensional and planar metallization structure for thin film solar cells
DE102009042018A1 (de) 2009-09-21 2011-03-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Solarzelle
CN102044593A (zh) 2009-10-19 2011-05-04 杜邦太阳能有限公司 制造具有光捕获特征的tco衬底的工艺及其装置
EP2341558B1 (en) 2009-12-30 2019-04-24 IMEC vzw Method of manufacturing a semiconductor device
US8604332B2 (en) 2010-03-04 2013-12-10 Guardian Industries Corp. Electronic devices including transparent conductive coatings including carbon nanotubes and nanowire composites, and methods of making the same
US8999857B2 (en) 2010-04-02 2015-04-07 The Board Of Trustees Of The Leland Stanford Junior University Method for forming a nano-textured substrate
US20120024336A1 (en) 2010-07-27 2012-02-02 Jeong-Mo Hwang Charge control of solar cell passivation layers
US8749009B2 (en) 2010-08-07 2014-06-10 Innova Dynamics, Inc. Device components with surface-embedded additives and related manufacturing methods
US8642883B2 (en) * 2010-08-09 2014-02-04 The Boeing Company Heterojunction solar cell
NL2005261C2 (en) 2010-08-24 2012-02-27 Solland Solar Cells B V Back contacted photovoltaic cell with an improved shunt resistance.
US9178105B2 (en) 2010-09-21 2015-11-03 Amberwave Inc. Flexible monocrystalline thin silicon cell
US20120104411A1 (en) 2010-10-29 2012-05-03 The Regents Of The University Of California Textured iii-v semiconductor
US9337366B2 (en) 2011-07-26 2016-05-10 Micron Technology, Inc. Textured optoelectronic devices and associated methods of manufacture
US20120160296A1 (en) 2011-09-30 2012-06-28 Olivier Laparra Textured photovoltaic cells and methods
KR20130049024A (ko) 2011-11-03 2013-05-13 삼성에스디아이 주식회사 태양 전지
US11646388B2 (en) 2012-09-14 2023-05-09 The Boeing Company Group-IV solar cell structure using group-IV or III-V heterostructures
US9099595B2 (en) 2012-09-14 2015-08-04 The Boeing Company Group-IV solar cell structure using group-IV or III-V heterostructures
US9530911B2 (en) 2013-03-14 2016-12-27 The Boeing Company Solar cell structures for improved current generation and collection
US8896008B2 (en) 2013-04-23 2014-11-25 Cree, Inc. Light emitting diodes having group III nitride surface features defined by a mask and crystal planes
US20150171261A1 (en) 2013-12-17 2015-06-18 Tel Solar Ag Transparent conductive oxide (tco) layer, and systems, apparatuses and methods for fabricating a transparent conductive oxide (tco) layer

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11038080B2 (en) 2012-01-19 2021-06-15 Utica Leaseco, Llc Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from etching
US11942566B2 (en) 2012-01-19 2024-03-26 Utica Leaseco, Llc Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from etching
CN108565315A (zh) * 2014-08-05 2018-09-21 奥塔装置公司 具有纹理化前表面和/或背表面的薄膜半导体光电器件
WO2017067413A1 (zh) * 2015-10-19 2017-04-27 北京汉能创昱科技有限公司 太阳能电池片、其制备方法及其组成的太阳能电池组
CN106611803A (zh) * 2015-10-19 2017-05-03 北京汉能创昱科技有限公司 一种太阳能电池片、其制备方法及其组成的太阳能电池组
CN106611803B (zh) * 2015-10-19 2019-04-23 北京创昱科技有限公司 一种太阳能电池片、其制备方法及其组成的太阳能电池组
CN108155108A (zh) * 2017-12-27 2018-06-12 中国科学院长春光学精密机械与物理研究所 一种氧化锌紫外探测器的封装方法及封装结构
CN108172663A (zh) * 2017-12-27 2018-06-15 中国科学院长春光学精密机械与物理研究所 一种ZnMgO日盲紫外探测器的封装方法及封装结构
CN108172663B (zh) * 2017-12-27 2019-12-24 中国科学院长春光学精密机械与物理研究所 一种ZnMgO日盲紫外探测器的封装方法及封装结构
CN108155108B (zh) * 2017-12-27 2020-01-14 中国科学院长春光学精密机械与物理研究所 一种氧化锌紫外探测器的封装方法及封装结构
CN116137306A (zh) * 2023-04-18 2023-05-19 南昌凯捷半导体科技有限公司 一种Micro-LED芯片及其制作方法

Also Published As

Publication number Publication date
KR20110086098A (ko) 2011-07-27
WO2010048537A3 (en) 2010-08-05
US20110056553A1 (en) 2011-03-10
US20190259888A1 (en) 2019-08-22
US20110048532A1 (en) 2011-03-03
EP2351097A2 (en) 2011-08-03
US20100132780A1 (en) 2010-06-03
US8895845B2 (en) 2014-11-25
US8895846B2 (en) 2014-11-25
TW201030998A (en) 2010-08-16
US10326033B2 (en) 2019-06-18
WO2010048537A2 (en) 2010-04-29
US20130153013A1 (en) 2013-06-20
US8937244B2 (en) 2015-01-20
US10505058B2 (en) 2019-12-10

Similar Documents

Publication Publication Date Title
US10505058B2 (en) Photovoltaic device
US8895847B2 (en) Photovoltaic device with increased light trapping
US10797187B2 (en) Photovoltaic device with back side contacts
US10014421B2 (en) High efficiency photovoltaic cells with self concentrating effect
US5123968A (en) Tandem photovoltaic solar cell with III-V diffused junction booster cell
US10062793B1 (en) High efficiency quantum well waveguide solar cells and methods for constructing the same
US9029680B2 (en) Integration of a photovoltaic device
US5091018A (en) Tandem photovoltaic solar cell with III-V diffused junction booster cell
US8101856B2 (en) Quantum well GaP/Si tandem photovoltaic cells
US8314327B2 (en) Photovoltaic cells based on nano or micro-scale structures
US10644174B2 (en) High efficiency photovoltaic cells with self concentrating effect
CN102257635A (zh) 光伏器件的薄吸收层
Oliva et al. III-V multi-junction Metal-Wrap-Through (MWT) concentrator solar cells

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20111123