CN102360168A - Integrated measured pattern and measurement method for lithography process - Google Patents
Integrated measured pattern and measurement method for lithography process Download PDFInfo
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- CN102360168A CN102360168A CN201110310582XA CN201110310582A CN102360168A CN 102360168 A CN102360168 A CN 102360168A CN 201110310582X A CN201110310582X A CN 201110310582XA CN 201110310582 A CN201110310582 A CN 201110310582A CN 102360168 A CN102360168 A CN 102360168A
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Abstract
The invention provides an integrated lithography process measurement pattern and a measurement method. The pattern comprises multiple or all of a vertical isolation line measurement part for measuring vertical isolation lines, a horizontal isolation line measurement part for measuring horizontal isolation lines, a vertical isolation trench measurement part for measuring vertical isolation trenches, a horizontal isolation trench measurement part for measuring horizontal isolation trenches, a vertical dense line measurement part for measuring vertical dense lines, a horizontal dense line measurement part for measuring horizontal dense lines, a vertical dense trench measurement part for measuring vertical dense trenches and a horizontal dense trench measurement part for measuring horizontal dense trenches.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly, the present invention relates to integrated measurement figure of a kind of photoetching process and photoetching process method for measurement.
Background technology
During semiconductor is made each layer process all requirement survey line bar width, isolate width, logical journey spacing (through pitch) etc.During semi-conductor chip is made, behind lithographic definition one deck circuit, need to measure some dimension of picture and come monitoring photoetching technology whether up to standard.
Specifically, line thickness is a spacing (pitch) with isolating the width addition.If line thickness is constant, to isolate width and become different size, this gap depth is called logical journey spacing.
But, in the prior art, only define intensive lines and the measurement figure of isolating lines.Fig. 1 shows the measurement figure of isolation lines of the prior art.Fig. 2 shows the measurement figure of intensive lines of the prior art.
Therefore; When measurement level and/or vertical isolation lines, isolated groove, intensive lines, intensive groove; Need look for figure to measure in the position that disperses, thereby, delay the measurement time thus and reduced measurement efficient for the measurement of multiple structure has brought great inconvenience.
Summary of the invention
Technical matters to be solved by this invention is to have above-mentioned defective in the prior art, provides a kind of and can reduce the measurement time and improve integrated measurement figure of photoetching process and the photoetching process method for measurement that measures efficient.
According to a first aspect of the invention; Provide a kind of photoetching process integrated measurement figure, it comprises: the intensive groove of level that the vertical intensive groove that the intensive lines of level that the vertical isolation lines that are used for measuring the vertical isolation lines measure part, be used for that the measurement level isolates that the level of lines isolates that lines measure part, the vertical isolation groove that is used to measure the vertical isolation groove measures part, the horizontal isolated groove that is used for the horizontal isolated groove of measurement measures part, the vertical intensive lines that are used to measure vertical intensive lines measure part, be used for the intensive lines of measurement level measure part, be used to measure vertical intensive groove measures part, be used for the intensive groove of measurement level measures a plurality of or whole of part.
Preferably, the integrated measurement figure of said photoetching process is whole uses.
Preferably, the integrated measurement figure of said photoetching process has the HLMC shape.
Preferably, the integrated measurement figure of above-mentioned photoetching process also comprises a plurality of parts that are used for continuous measurement, through measuring the different spacing of said a plurality of parts, just can obtain optics correction data thus, and these optics correction data are used as one group of data.
Preferably, the intensive groove of level that the integrated measurement figure of said photoetching process comprises that the vertical isolation lines that are used to measure the vertical isolation lines measure part, are used for that the measurement level isolates that the level of lines isolates that lines measure part, the vertical isolation groove that is used to measure the vertical isolation groove measures part, the horizontal isolated groove that is used for the horizontal isolated groove of measurement measures part, the vertical intensive lines that are used to measure vertical intensive lines measure part, the intensive lines of level that are used for the intensive lines of measurement level measure part, the vertical intensive groove that is used to measure vertical intensive groove measures part, be used for the intensive groove of measurement level measures all parts of part.
The integrated measurement figure of the photoetching process of first aspect present invention has related to the figure of integrated multiple measurement purposes; Be used for measuring various circuitous patterns; As isolate lines, isolated groove, intensive lines, intensive groove, and the logical journey spacing that is used for the figure of optics correction.And, adopted the design of various figures integrated, can better monitor in photoetching process intensive lines, groove with isolate lines, the assessment of groove and optics correction effect quality.And the integrated measurement figure of first aspect present invention has comprised multiple measurement figure, can in this comprehensive shape, measure every kind of figure as required, and look for figure to measure unlike the prior art that kind in the position that disperses; Reduce the measurement time thus and improve and measure efficient.
According to a second aspect of the invention, a kind of photoetching process method for measurement is provided, its adopt according to the integrated measurement figure of the described photoetching process of first aspect present invention measure line thickness, isolate width, one or more in the logical journey spacing.
Owing to adopted according to the integrated measurement figure of the described photoetching process of first aspect present invention; Therefore; It will be appreciated by persons skilled in the art that according to the photoetching process method for measurement of second aspect present invention and can realize the useful technique effect that the integrated measurement figure of photoetching process according to a first aspect of the invention can be realized equally.
Description of drawings
In conjunction with accompanying drawing, and, will more easily more complete understanding be arranged and more easily understand its attendant advantages and characteristic the present invention through with reference to following detailed, wherein:
Fig. 1 schematically shows the measurement figure of isolation lines of the prior art.
Fig. 2 schematically shows the measurement figure of intensive lines of the prior art.
Fig. 3 schematically shows the measurement figure according to the embodiment of the invention.
Need to prove that accompanying drawing is used to explain the present invention, and unrestricted the present invention.Notice that the accompanying drawing of expression structure possibly not be to draw in proportion.And in the accompanying drawing, identical or similar elements indicates identical or similar label.
Embodiment
In order to make content of the present invention clear more and understandable, content of the present invention is described in detail below in conjunction with specific embodiment and accompanying drawing.
Fig. 3 schematically shows the measurement figure according to the embodiment of the invention.Integrated measurement figure shown in Figure 3 is as ameristic whole a use.
Specifically, integrated measurement figure shown in Figure 3 comprises: can measure the vertical isolation lines first 1, can measure intensive lines of vertical-horizontal and/or the intensive groove of level second portion 2, can measure the vertical isolation groove third part 3, can measure vertical intensive lines and/or vertical intensive groove the 4th part 4, can the measurement level isolate the 5th part 5 of lines and the 6th part 6 that can the horizontal isolated groove of measurement.
Need to prove that integrated measurement figure shown in Figure 3 only is a preferred graphical examples of the present invention, this integrated measurement figure has reflected the microelectronic logo---HLMC of company of magnificent power; That is integrated measurement figure, shown in Figure 3 has the HLMC shape.
In fact; Can suitably be provided with, isolate a plurality of or whole in lines, vertical isolation groove, horizontal isolated groove, vertical intensive lines, the intensive lines of level, vertical intensive groove, the intensive groove of level so that integrated measurement figure can measure vertical isolation lines, level.
Therefore; Correspondingly; Integrated measurement figure according to the embodiment of the invention can comprise a plurality of parts, and the intensive groove of level that the vertical intensive groove that the intensive lines of level that the vertical isolation lines that for example are used for measuring the vertical isolation lines measure part, be used for that the measurement level isolates that the level of lines isolates that lines measure part, the vertical isolation groove that is used to measure the vertical isolation groove measures part, the horizontal isolated groove that is used for the horizontal isolated groove of measurement measures part, the vertical intensive lines that are used to measure vertical intensive lines measure part, be used for the intensive lines of measurement level measure part, be used to measure vertical intensive groove measures part, be used for the intensive groove of measurement level measures a plurality of or whole of part.In a preferred embodiment, the integrated measurement figure of said photoetching process comprises above-mentioned whole part, thereby comprises all possibilities.
And, the figure that utilizes the embodiment of the invention to design, the figure that can measure the optics correction leads to the journey spacing.Specifically; The integrated measurement figure of above-mentioned photoetching process also comprises a plurality of parts (a plurality of parts 7,8,9 for example shown in Figure 3 that are used for continuous measurement; 10); Through measuring the different spacing of said a plurality of parts, just can obtain optics correction data thus, these optics correction data are used as one group of data.
Integrated measurement figure shown in Figure 3 has comprised various measurement figures, can in this comprehensive shape, measure every kind of figure as required, and look for figure to measure unlike the prior art that kind in the position that disperses; Reduce the measurement time thus and improve and measure efficient.And the integrated measurement figure of above-mentioned photoetching process has related to the figure of integrated multiple measurement purposes, is used for measuring various circuitous patterns, like isolation lines, isolated groove, intensive lines, intensive groove, and the logical journey spacing that is used for the figure of optics correction.And, adopted the design of various figures integrated, can better monitor in photoetching process intensive lines, groove with isolate lines, the assessment of groove and optics correction effect quality.
It is understandable that though the present invention with the preferred embodiment disclosure as above, yet the foregoing description is not in order to limit the present invention.For any those of ordinary skill in the art; Do not breaking away under the technical scheme scope situation of the present invention; All the technology contents of above-mentioned announcement capable of using is made many possible changes and modification to technical scheme of the present invention, or is revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical scheme of the present invention, all still belongs in the scope of technical scheme protection of the present invention any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (6)
1. integrated measurement figure of photoetching process is characterized in that comprising: the intensive groove of level that the vertical intensive groove that the intensive lines of level that the vertical isolation lines that are used for measuring the vertical isolation lines measure part, be used for that the measurement level isolates that the level of lines isolates that lines measure part, the vertical isolation groove that is used to measure the vertical isolation groove measures part, the horizontal isolated groove that is used for the horizontal isolated groove of measurement measures part, the vertical intensive lines that are used to measure vertical intensive lines measure part, be used for the intensive lines of measurement level measure part, be used to measure vertical intensive groove measures part, be used for the intensive groove of measurement level measures a plurality of or whole of part.
2. the integrated measurement figure of photoetching process according to claim 1 is characterized in that, the integrated measurement figure of said photoetching process is whole to be used.
3. the integrated measurement figure of photoetching process according to claim 1 and 2 is characterized in that, the integrated measurement figure of said photoetching process has the HLMC shape.
4. the integrated measurement figure of photoetching process according to claim 1 and 2; It is characterized in that the intensive groove of level that the vertical intensive groove that the integrated measurement figure of said photoetching process comprises that the vertical isolation lines that are used to measure the vertical isolation lines measure part, are used for that the measurement level isolates that the level of lines isolates that lines measure part, the vertical isolation groove that is used to measure the vertical isolation groove measures part, the horizontal isolated groove that is used for the horizontal isolated groove of measurement measures part, the vertical intensive lines that are used to measure vertical intensive lines measure part, the intensive lines of level that are used for the intensive lines of measurement level measure part, be used to measure vertical intensive groove measures part, be used for the intensive groove of measurement level measures all parts of part.
5. the integrated measurement figure of photoetching process according to claim 1 and 2; It is characterized in that; The integrated measurement figure of said photoetching process also comprises a plurality of parts that are used for continuous measurement; Through measuring the different spacing of said a plurality of parts, just can obtain optics correction data thus, these optics correction data are used as one group of data.
6. photoetching process method for measurement, it is characterized in that adopting according to the integrated measurement figure of the described photoetching process of one of claim 1 to 5 measure line thickness, isolate width, one or more in the logical journey spacing.
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| CN201110310582.XA CN102360168B (en) | 2011-10-13 | 2011-10-13 | Integrated measured pattern and measurement method for lithography process |
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| CN201110310582.XA CN102360168B (en) | 2011-10-13 | 2011-10-13 | Integrated measured pattern and measurement method for lithography process |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110690196A (en) * | 2019-09-29 | 2020-01-14 | 中国电子科技集团公司第十一研究所 | Detector chip, dense line preparation method thereof and stress monitoring method thereof |
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| US5674650A (en) * | 1994-08-02 | 1997-10-07 | U.S. Philips Corporation | Method of repetitively imaging a mask pattern on a substrate, and apparatus for performing the method |
| US5776640A (en) * | 1996-06-24 | 1998-07-07 | Hyundai Electronics Industries Co., Ltd. | Photo mask for a process margin test and a method for performing a process margin test using the same |
| US6433878B1 (en) * | 2001-01-29 | 2002-08-13 | Timbre Technology, Inc. | Method and apparatus for the determination of mask rules using scatterometry |
| US20040241558A1 (en) * | 2003-06-02 | 2004-12-02 | Intel Corporation | Focus detection structure |
| US20050009344A1 (en) * | 2002-07-11 | 2005-01-13 | Jiunn-Ren Hwang | Optical proximity correction method |
| US7258953B2 (en) * | 2005-01-28 | 2007-08-21 | Lsi Corporation | Multi-layer registration and dimensional test mark for scatterometrical measurement |
| CN101206406A (en) * | 2006-12-18 | 2008-06-25 | 中芯国际集成电路制造(上海)有限公司 | Photolithography detection pattern and photolithography edition territory |
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2011
- 2011-10-13 CN CN201110310582.XA patent/CN102360168B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5674650A (en) * | 1994-08-02 | 1997-10-07 | U.S. Philips Corporation | Method of repetitively imaging a mask pattern on a substrate, and apparatus for performing the method |
| US5776640A (en) * | 1996-06-24 | 1998-07-07 | Hyundai Electronics Industries Co., Ltd. | Photo mask for a process margin test and a method for performing a process margin test using the same |
| US6433878B1 (en) * | 2001-01-29 | 2002-08-13 | Timbre Technology, Inc. | Method and apparatus for the determination of mask rules using scatterometry |
| US20050009344A1 (en) * | 2002-07-11 | 2005-01-13 | Jiunn-Ren Hwang | Optical proximity correction method |
| US20040241558A1 (en) * | 2003-06-02 | 2004-12-02 | Intel Corporation | Focus detection structure |
| US7258953B2 (en) * | 2005-01-28 | 2007-08-21 | Lsi Corporation | Multi-layer registration and dimensional test mark for scatterometrical measurement |
| CN101206406A (en) * | 2006-12-18 | 2008-06-25 | 中芯国际集成电路制造(上海)有限公司 | Photolithography detection pattern and photolithography edition territory |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110690196A (en) * | 2019-09-29 | 2020-01-14 | 中国电子科技集团公司第十一研究所 | Detector chip, dense line preparation method thereof and stress monitoring method thereof |
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