CN102591738A - Data management method, memory controller and embedded memory storage device - Google Patents
Data management method, memory controller and embedded memory storage device Download PDFInfo
- Publication number
- CN102591738A CN102591738A CN2011100024426A CN201110002442A CN102591738A CN 102591738 A CN102591738 A CN 102591738A CN 2011100024426 A CN2011100024426 A CN 2011100024426A CN 201110002442 A CN201110002442 A CN 201110002442A CN 102591738 A CN102591738 A CN 102591738A
- Authority
- CN
- China
- Prior art keywords
- state
- unit
- data
- physical pages
- storage device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention provides a data management method, a memory controller and an embedded memory storage device. The embedded memory storage device is provided with a plurality of physical blocks, and each physical block is provided with a plurality of quick physical pages and a plurality of slow physical pages. The method comprises a step of detecting the state of a state marking unit. The method also comprises the steps of: automatically reading the stored data if the state of the state marking unit is marked as a first state, storing the data again by the quick physical pages and the slow physical pages of the embedded memory storage device, and marking the state of the state marking unit as a second state. Therefore, the storage space of the embedded memory storage device can be effectively utilized.
Description
Technical field
The invention relates to a kind of data managing method, and particularly relevant for a kind of Memory Controller and in-line memory storage device that is used for the data managing method of in-line memory storage device and uses the method.
Background technology
Digital camera, mobile phone and MP3 are very rapid in growth over the years, make the consumer also increase rapidly the demand of Storage Media.Because characteristics such as duplicative nonvolatile memory (rewritablenon-volatile memory) has that data are non-volatile, power saving, volume are little, do not have mechanical structure, read or write speed is fast are suitable for this a little electronic products most.(embeded Multi Media Card is exactly a kind of with the storage device of flash memory as Storage Media eMMC) to be widely used in the built-in multimedia card of mobile phone.Therefore, the flash memory industry becomes a ring quite popular in the electronic industry in recent years.
In general, be used for electronic product the built-in multimedia card (embeded Multi Media Card eMMC) is the image file (image file) that is used for the burning electronic product, for example, operating system.Particularly, for the ease of a large amount of productions, image file can be burnt to during the built-in multimedia blocking makes in advance, and the built-in multimedia card that prestores image file afterwards just can be soldered on the circuit substrate of electronic product.
In flash memory module, data are to discern according to electric charge stored in the storage unit.Yet under some environment more special to storer, when for example welding, its high temperature can impact (for example, electric leakage) to electric charge stored in the storage unit.Therefore, therefore the data that are pre-stored in the built-in multimedia card may make a mistake.
Summary of the invention
The present invention provides a kind of data managing method, Memory Controller and in-line memory storage device, and it is storage data again, to use the storage area of in-line memory storage device effectively.
The present invention provides a kind of data managing method, and it can avoid losing the data that are pre-stored in the in-line memory storage device because of welding.
The present invention provides a kind of Memory Controller and in-line memory storage device, and its performed writing mechanism can prevent to be pre-stored in the data loss of in-line memory storage device.
The present invention provides a kind of data managing method that is used for the in-line memory storage device, and wherein this in-line memory storage device has a plurality of physical blocks and each physical blocks has a plurality of rapid physical pages and a plurality of physical page at a slow speed.The notebook data management method comprises that the state of detection indicates a state of unit; Wherein when only the rapid physical page is used to store data; The state that this state indicates the unit is marked as first state; And when these a little rapid physical pages when physical page all is used to storage data at a slow speed, the state that state indicates the unit is marked as second state.The notebook data management method also comprises when the state of state sign unit is marked as first state; Automatically read stored data, use these a little rapid physical pages and physical page at a slow speed to come to store again these data and be second state the status indication that state indicates the unit.
In one embodiment of this invention, above-mentioned data managing method also comprises: receive at least one stereotyped command from host computer system; Judge whether this stereotyped command belongs to a particular aspects; And only when this stereotyped command belongs to particular aspects, just detect the state that above-mentioned state indicates the unit.
In one embodiment of this invention, the step of using the part rapid physical page at least and physical page at a slow speed to come to store again above-mentioned data in the time of above-mentioned comprises: a plurality ofly write instruction and use at least the part rapid physical page and physical page at a slow speed to come to store again above-mentioned data simultaneously through what execution came from host computer system.
Exemplary embodiment of the present invention proposes a kind of Memory Controller; Be used for being configured in the in-line memory storage device to manage the duplicative non-volatile memory module of this in-line memory storage device, wherein this duplicative non-volatile memory module has a plurality of physical blocks and each physical blocks has a plurality of rapid physical pages and a plurality of physical page at a slow speed.This Memory Controller comprises HPI, memory interface and memory management circuitry.HPI is in order to be coupled to a host computer system.Memory interface is in order to couple duplicative non-volatile memory module so far.Memory management circuitry couples so far HPI and memory interface.At this, this memory management circuitry is in order to the state of detected state sign unit, and wherein when only these a little rapid physical pages were used to store data, this state that this state indicates the unit was marked as one first state.In addition; Wherein when the state of state sign unit is marked as first state; Memory management circuitry automatically reads stored data, uses these a little rapid physical pages and physical page at a slow speed to come to store again these data and is second state with the status indication that state indicates the unit.
In one embodiment of this invention, above-mentioned memory management circuitry receives at least one stereotyped command and judges whether this stereotyped command belongs to a particular aspects from host computer system.And only when this stereotyped command belonged to this particular aspects, above-mentioned memory management circuitry just detected the state that above-mentioned state indicates the unit.
In one embodiment of this invention, above-mentioned memory management circuitry a plurality ofly writes instruction and uses at least the part rapid physical page and physical page at a slow speed to come to store again above-mentioned data simultaneously through what execution came from host computer system.
Exemplary embodiment of the present invention proposes a kind of in-line memory storage device, and it comprises connector, duplicative non-volatile memory module and Memory Controller.Connector is in order to be coupled to host computer system.The duplicative non-volatile memory module has a plurality of physical blocks and each physical blocks and has a plurality of rapid physical pages and physical page at a slow speed.Memory Controller couples so far connector and duplicative non-volatile memory module.At this, Memory Controller is in order to the state of detected state sign unit, and wherein when only these a little rapid physical pages were used to store data, this state that this state indicates the unit was marked as one first state.In addition; Wherein when the state of state sign unit is marked as first state; Memory Controller automatically reads stored data, uses these a little rapid physical pages and physical page at a slow speed to come to store again these data and is second state with the status indication that state indicates the unit.
In one embodiment of this invention, above-mentioned Memory Controller receives at least one stereotyped command and judges whether this stereotyped command belongs to a particular aspects from host computer system.And only when this stereotyped command belonged to this particular aspects, above-mentioned Memory Controller just detected the state that above-mentioned state indicates the unit.
In one embodiment of this invention, above-mentioned Memory Controller a plurality ofly writes instruction and uses at least the part rapid physical page and physical page at a slow speed to come to store again above-mentioned data simultaneously through what execution came from host computer system.
Exemplary embodiment of the present invention proposes a kind of data managing method; It is used for preventing losing in a tentation data of an in-line memory storage device, and wherein this in-line memory storage device has a plurality of physical blocks and each physical blocks has a plurality of rapid physical pages and a plurality of physical page at a slow speed.Originally prevent that data loss method from comprising: burning step and storing step again.The burning step stores this tentation data in order to the rapid physical page that only uses the in-line memory storage device and is first state with the status indication that state indicates the unit, and wherein to indicate unit be to be stored in the in-line memory storage device to this state.Again storing step comes to store again this tentation data in order to the rapid physical page that uses the in-line memory storage device and physical page at a slow speed and is second state with the status indication that state indicates the unit.
In one embodiment of this invention, above-mentioned data managing method also comprises: the state that state is indicated the unit initially is labeled as original state; Judge whether to receive the instruction of predetermined manufacturer from host computer system; Whether the state of judging this state sign unit is original state; And, just carry out above-mentioned burning step only when receiving state that the instruction of predetermined manufacturer and this state indicate the unit when being original state.
In one embodiment of this invention, above-mentioned data managing method also comprises: judge whether to receive the instruction of predetermined manufacturer from host computer system; Whether the state of judging state sign unit is first state; And, just carry out above-mentioned storing step again only when receiving state that instruction of predetermined manufacturer and state indicate the unit when being first state.
In one embodiment of this invention, above-mentioned data managing method also comprises: the state that state is indicated the unit initially is labeled as original state; Receive at least one stereotyped command from host computer system; Judge whether the stereotyped command that is received belongs to particular aspects; Whether the state of judging state sign unit is original state; And when only working as the stereotyped command that is received and belonging to state that particular aspects and state indicate the unit and be original state, just carry out above-mentioned burning step.
In one embodiment of this invention, above-mentioned data managing method also comprises: receive at least one stereotyped command from host computer system; Judge whether the stereotyped command that is received belongs to particular aspects; Whether the state of judging state sign unit is first state; And when only working as the stereotyped command that is received and belonging to state that particular aspects and state indicate the unit and be first state, just carry out above-mentioned storing step again.
In one embodiment of this invention; This again storing step be a plurality ofly to carry out when writing instruction through what execution came from a host computer system, tentation data is stored in batches again in the rapid physical page of in-line memory storage device and the physical page at a slow speed.
In one embodiment of this invention, above-mentioned data managing method also comprises: in above-mentioned burning step and above-mentioned again between the storing step, the in-line memory storage device is adhered on the circuit substrate with a welding manner.
In one embodiment of this invention, above-mentioned data managing method also comprises: these a little physical blocks are grouped into a storage area and a system region at least, and wherein this state sign unit is stored in the physical blocks of this system region.
Exemplary embodiment of the present invention proposes a kind of Memory Controller; Be used for being configured in the in-line memory storage device to manage the duplicative non-volatile memory module of this in-line memory storage device, wherein this duplicative non-volatile memory module has a plurality of physical blocks and each physical blocks has a plurality of rapid physical pages and a plurality of physical page at a slow speed.This Memory Controller comprises HPI, memory interface and memory management circuitry.HPI is in order to be coupled to a host computer system.Memory interface is in order to couple duplicative non-volatile memory module so far.Memory management circuitry couples so far HPI and memory interface.At this, this memory management circuitry is in order to only to use these a little rapid physical pages and store a tentation data and to be one first state with the status indication that state indicates the unit.In addition, memory management circuitry is also in order to use a little therewith physical pages at a slow speed of these a little rapid physical pages to come to store again this tentation data and to be second state with this status indication that state indicates the unit.Moreover it is to be stored in the duplicative non-volatile memory module that memory management circuitry indicates the unit with this state.
In one embodiment of this invention, above-mentioned memory management circuitry initially is labeled as original state with the state that state indicates the unit.And; Only when memory management circuitry from host computer system, receive a predetermined manufacturer instruction and; When the state that above-mentioned state indicates the unit was original state, memory management circuitry was just only used these a little rapid physical pages to write tentation data and is this first state with the status indication that state indicates the unit.
In one embodiment of this invention; Only receive state that a predetermined manufacturer instruction and above-mentioned state indicate the unit when being first state from host computer system when memory management circuitry, above-mentioned memory management circuitry is just used these a little rapid physical pages and physical page at a slow speed to come to store again this tentation data and is second state with the status indication that this state indicates the unit.
In one embodiment of this invention, above-mentioned memory management circuitry initially is labeled as original state with the state that state indicates the unit.And; Only when memory management circuitry when host computer system receives state that at least one stereotyped command belong to particular aspects and this state indicate the unit and is original state, memory management circuitry is just only used these a little rapid physical pages to write above-mentioned tentation data and is first state with the status indication that state indicates the unit.
In one embodiment of this invention; Only when memory management circuitry when host computer system receives state that at least one stereotyped command belong to particular aspects and this state indicate the unit and is first state, above-mentioned memory management circuitry is just used these a little rapid physical pages and physical page at a slow speed to come to store again above-mentioned tentation data and is second state with the status indication that state indicates the unit.
In one embodiment of this invention, above-mentioned memory management circuitry stores tentation data in so far a little rapid physical pages and the physical page at a slow speed in a plurality of write between order period that execution comes from host computer system in batches again.
In one embodiment of this invention, above-mentioned memory management circuitry is grouped into a storage area and a system region at least with these a little physical blocks, and above-mentioned state sign unit is stored in the physical blocks of system region.
Exemplary embodiment of the present invention proposes a kind of in-line memory storage device, and it comprises connector, duplicative non-volatile memory module and Memory Controller.Connector is in order to be coupled to host computer system.The duplicative non-volatile memory module has a plurality of physical blocks and each physical blocks and has a plurality of rapid physical pages and physical page at a slow speed.Memory Controller couples so far connector and duplicative non-volatile memory module.At this; Memory Controller is in order to only to use these a little rapid physical pages and store a tentation data and to be first state with the status indication that state indicates the unit, and wherein state is indicated the unit is to be stored in the duplicative non-volatile memory module to Memory Controller.In addition, Memory Controller is also in order to use these a little rapid physical pages and physical page at a slow speed to come to store again this tentation data and to be second state with the status indication that state indicates the unit.
In one embodiment of this invention, above-mentioned Memory Controller initially is labeled as an original state with the state that state indicates the unit.And; Wherein only from host computer system, receive state that a predetermined manufacturer instruction and this state indicate the unit when being original state when controller, Memory Controller just only uses these a little rapid physical pages to write above-mentioned tentation data and is first state with the status indication that state indicates the unit.
In one embodiment of this invention; Only receive state that a predetermined manufacturer instruction and this state indicate the unit when being first state from host computer system when Memory Controller, above-mentioned Memory Controller just uses these a little rapid physical pages and physical page at a slow speed to come to store again above-mentioned tentation data and is second state with the status indication that state indicates the unit.
In one embodiment of this invention, above-mentioned Memory Controller initially is labeled as original state with the state that state indicates the unit.And; Only when Memory Controller when host computer system receives state that at least one stereotyped command belong to particular aspects and this state indicate the unit and is original state, above-mentioned Memory Controller just only uses these a little rapid physical pages to write tentation data and is first state with the status indication that this state indicates the unit.
In one embodiment of this invention; Only when Memory Controller when host computer system receives state that at least one stereotyped command belong to particular aspects and this state indicate the unit and is first state, above-mentioned Memory Controller just uses these a little rapid physical pages and physical page at a slow speed to come to store again above-mentioned tentation data and is second state with the status indication that state indicates the unit.
In one embodiment of this invention, above-mentioned Memory Controller stores above-mentioned tentation data in so far a little rapid physical pages and the physical page at a slow speed in a plurality of write between order period that execution comes from host computer system in batches again.
In one embodiment of this invention, above-mentioned Memory Controller is grouped into a storage area and a system region at least with these a little physical blocks, and above-mentioned state sign unit is stored in the physical blocks of system region.
Based on above-mentioned, the method for exemplary embodiment of the present invention, Memory Controller and in-line memory storage device can prevent effectively that the data that are pre-stored in the duplicative non-volatile memory module from losing because of welding.
For letting the above-mentioned feature and advantage of the present invention can be more obviously understandable, hereinafter is special lifts embodiment, and cooperates appended graphic elaborating as follows.
Description of drawings
Fig. 1 is electronic installation and the in-line memory storage device that first exemplary embodiment is illustrated according to the present invention.
Fig. 2 is the summary calcspar that illustrates in-line memory storage device shown in Figure 1.
Fig. 3 is the synoptic diagram of the physical blocks that first exemplary embodiment is illustrated according to the present invention.
Fig. 4 is the summary calcspar of the Memory Controller that first exemplary embodiment is illustrated according to the present invention.
Fig. 5 is the example schematic with rapid physical page storage data that first exemplary embodiment is illustrated according to the present invention.
Fig. 6 be that first exemplary embodiment is illustrated according to the present invention with the rapid physical page and the example schematic of physical page storage data at a slow speed.
Fig. 7 is the process flow diagram of the data managing method that first exemplary embodiment is illustrated according to the present invention.
Fig. 8 is the process flow diagram of the data managing method that second exemplary embodiment is illustrated according to the present invention.
Fig. 9 is the process flow diagram of the execution burning step that the 3rd exemplary embodiment is illustrated according to the present invention.
Figure 10 is the process flow diagram that when execution writes instruction, tentation data is stored again that the 3rd exemplary embodiment is illustrated according to the present invention.
[main element label declaration]
1000: electronic installation
100: the in-line memory storage device
102: connector
104: Memory Controller
106: the duplicative non-volatile memory module
202: memory management circuitry
204: HPI
206: memory interface
208: Error-Correcting Circuit
210: memory buffer
212: electric power management circuit
310: the rapid physical page
320: physical page at a slow speed
502,504: physical blocks
S701, S703, S705: the step of data management
S801, S803, S805, S809: the step of data management
S901, S903, S905: burning step
S1001, S1003, S1005, S1007, S1009, S1011: the step that when execution writes instruction, tentation data is stored again
Embodiment
The present invention proposes a kind of data managing method, and it can rearrange data according to the storing state of in-line memory storage device, uses the storage area of in-line memory storage device by this effectively.In addition; Data managing method of the present invention is stored in tentation data in the rapid physical page and the physical page at a slow speed through using imprinting mechanism and be stored in tentation data in the more stable rapid physical page and re-use afterwards reduction mechanism again; Can avoid being stored in the data in the in-line memory storage device thus; Because of more special environment, the high temperature that is produced like welding, and produce error bit.Below will and cooperate the graphic the present invention of detailed description with several exemplary embodiment.
[first exemplary embodiment]
Fig. 1 is electronic installation and the in-line memory storage device that first exemplary embodiment is illustrated according to the present invention.
Please with reference to Fig. 1, electronic installation 1000 comprises microprocessor and RAS (not illustrating).In embodiments of the present invention, in-line memory storage device 100 is to be embedded on the circuit substrate of electronic installation 1000.Running through microprocessor and RAS can be from in-line memory storage device 100 reading of data or data are write in the in-line memory storage device 100.For example, electronic installation 1000 is that intelligent mobile phone and in-line memory storage device 100 are in order to store the operating system of this intelligent mobile phone.
In this exemplary embodiment, in-line memory storage device 100 can be the built-in multimedia card (Embedded Multi Media Card, eMMC).Yet; It must be appreciated, the invention is not restricted to this, in another exemplary embodiment of the present invention; In-line memory storage device 100 also can be the embedded-type security digital card (Embeded Secure Digital, eSD) or other embedded non-volatile memory storage device.
Fig. 2 is the summary calcspar that illustrates in-line memory storage device shown in Figure 1.
Please with reference to Fig. 2, in-line memory storage device 100 comprises connector 102, Memory Controller 104 and duplicative non-volatile memory module 106.In an exemplary embodiment, this connector 102, Memory Controller 104 can all be packaged in the chips with duplicative non-volatile memory module 106.
In this exemplary embodiment, connector 102 is to be compatible with the MMC standard.Yet, it must be appreciated that the invention is not restricted to this, connector 102 can also be to meet SD standard or other embedded interface standard.
Duplicative non-volatile memory module 106 is to be coupled to Memory Controller 104, and the data that write in order to stored electrons device 1000.Duplicative non-volatile memory module 106 has a plurality of physical blocks.Each physical blocks has a plurality of physical pages respectively, and the physical page that wherein belongs to same physical blocks can be write and side by side erased independently.More detailed, physical blocks is the least unit of erasing.That is each physical blocks contains the storage unit of being erased in the lump of minimal amount.Physical page is the minimum unit of programming.That is, physical page is the minimum unit that writes data.Yet, it must be appreciated that in another exemplary embodiment of the present invention, the least unit that writes data can also be physical sector or other size.For example, each physical blocks is made up of 128 physical pages.Yet, it must be appreciated that the invention is not restricted to this, each physical blocks is to be made up of 256 physical pages or other arbitrarily individual physical page.Each physical page comprises user's data (user data) position district and redundant (redundancy) position district.User's data bit district is in order to storage user's data, and the redundant digit district is in order to the data (for example, error-correcting code) of stocking system.
In this exemplary embodiment, duplicative non-volatile memory module 106 is multi-level cell memory (Multi Level Cell, MLC) a NAND type flash memory module.Specifically, NAND type flash memory module can be divided into MLC NAND type flash memory module and single-order layer storage unit (Single-Level Cell, SLC) NAND type flash memory module according to the storable data bits of each storage unit.Each storage unit of SLC NAND type flash memory module only can store 1 bit data, and each storage unit of MLC NAND type flash memory module can store the bit data more than at least 2.For example, be example with 4 rank storage unit NAND type flash memory modules, each storage unit can store 2 bit data (that is, " 11 ", " 10 ", " 00 " and " 01 ").The base this, can divide into 2 stages to writing of 4 rank storage unit flash memory modules.Phase one is writing of lower page (lowerpage), and subordinate phase is writing of the last page (upper page), and wherein the writing speed of lower page can be faster than the last page.Therefore, the physical page of MLC NAND type flash memory module can be divided into the physical page (that is the last page) and the rapid physical page (that is lower page) at a slow speed.Particularly, compared to the last page, the storage fiduciary level of lower page is higher.Similarly, in the case of 8 rank storage unit NAND type flash memory modules or 16 rank storage unit NAND type flash memory modules, storage unit can store more long numeric data and can be so that more the multistage writes.At this, the physical page that writing speed is the fastest is called lower page, and the slower page of other writing speed is referred to as the page.For example, the last page comprises a plurality of pages with different writing speeds.In addition, in other embodiments, the last page also can be the slowest page of writing speed, perhaps writing speed the slowest with the part writing speed faster than the writing speed page of the page the most slowly.For example, in 8 rank storage unit NAND type flash memory modules, lower page is the fastest and writing speed time fast page of writing speed, and the last page then is the slowest and writing speed time slow page of writing speed.
Fig. 3 is the synoptic diagram of the physical blocks that first exemplary embodiment is illustrated according to the present invention.
Please with reference to Fig. 3; Physical page in the physical blocks of 4 rank storage unit flash memory modules can be divided into a plurality of rapid physical pages 310 and a plurality of physical pages at a slow speed 320 according to its write diagnostics, and the speed that wherein writes data to the rapid physical page 310 is faster than writing data to the speed and the data storing of physical page 320 are higher than the fiduciary level of physical page 320 at a slow speed in the fiduciary level of the rapid physical page 310 at a slow speed.In addition, data must be written into according to the numbering of physical page in order.
Fig. 4 is the summary calcspar of the Memory Controller that first exemplary embodiment is illustrated according to the present invention.
Please with reference to Fig. 4, Memory Controller 104 comprises memory management circuitry 202, HPI 204 and memory interface 206.
In this exemplary embodiment, the control module of memory management circuitry 202 is to come real the work with program.For example, memory management circuitry 202 has microprocessor unit (not illustrating) and ROM (read-only memory) (not illustrating), and these a little steering orders are to be burned onto in this ROM (read-only memory).At this, this slightly program also be called firmware.When memorizer memory devices 100 running, this slightly program can carry out to carry out the runnings such as writing, read and erase of data by microprocessor unit.
In another exemplary embodiment of the present invention, above-mentioned microprogram also can be stored in the specific region (for example, being exclusively used in the system region of storage system data in the memory module) of duplicative non-volatile memory module 106.In addition, memory management circuitry 202 has microprocessor unit (not illustrating), ROM (read-only memory) (not illustrating) and RAS (not illustrating).Particularly; This ROM (read-only memory) has the sign indicating number of driving; And when Memory Controller 104 was enabled, microprocessor unit can be carried out this driving yard microprogram that section will be stored in the duplicative non-volatile memory module 106 earlier and be loaded in the RAS of memory management circuitry 202.Afterwards, microprocessor unit can turn round this microprogram to carry out the runnings such as writing, read and erase of data.In addition, in another exemplary embodiment of the present invention, the control module of memory management circuitry 202 can also an example, in hardware be come real the work.
Host interface logic interface 204 is instruction and the data that are coupled to memory management circuitry 202 and transmitted in order to reception and identification electronic installation 1000.That is to say that instruction that electronic installation 1000 is transmitted and data can be sent to memory management circuitry 202 through host interface logic interface 204.In this exemplary embodiment, host interface logic interface 204 is to be compatible with the eMMC standard.Yet, it must be appreciated to the invention is not restricted to this that host interface logic interface 204 can also be to be compatible with eSD standard or other data transmission standard that is fit to.
Error-Correcting Circuit 208 be coupled to memory management circuitry 202 and in order to execution error inspection and correction program to guarantee the correctness of data.Specifically; When execution writes instruction; Error-Correcting Circuit 208 can produce corresponding error-correcting code for the data of desiring to write, and memory management circuitry 202 can write to these data in the duplicative non-volatile memory module 106 with corresponding error-correcting code.Afterwards; When memory management circuitry 202 can read these data corresponding bug check and correcting code during reading of data simultaneously from duplicative non-volatile memory module 106, and Error-Correcting Circuit 208 can be according to this bug check and data execution error inspection and the correction program of correcting code to being read.
In the present invention's one exemplary embodiment, Memory Controller 104 also comprises memory buffer 210.Memory buffer 210 is to be coupled to memory management circuitry 202 and in order to the temporary data that come from the data and instruction of electronic installation 1000 or come from duplicative non-volatile memory module 106.
In the present invention's one exemplary embodiment, Memory Controller 104 also comprises electric power management circuit 212.Electric power management circuit 212 is to be coupled to memory management circuitry 202 and in order to the power supply of control in-line memory storage device 100.
In this exemplary embodiment, memory management circuitry 202 can be in duplicative non-volatile memory module 106 storing state indicate unit (for example, a flag working storage) and the state that this state indicates the unit initially be labeled as original state.For example, in exemplary embodiment of the present invention, memory management circuitry 202 can be grouped into physical blocks storage area and system region and state is indicated the unit and be stored in the physical blocks of system region.The physical blocks of storage area is in order to (for example to store user's data; The data of electronic installation institute access) and the physical blocks of system region in order to the system data that stores in-line memory storage device 100 (for example, the number of the number of physical blocks, physical page etc.).
Particularly, when the rapid physical page that only uses physical blocks came storage data, memory management circuitry 202 can be first state with the status indication of this state sign unit.
Fig. 5 is the synoptic diagram that only comes storage data with the rapid physical page that first exemplary embodiment is illustrated according to the present invention, explains in the stored size of data of this hypothesis it is that size and the duplicative non-volatile memory module 106 that equals a physical blocks is made up of physical blocks 502 and 504 of physical blocks for ease.
Please with reference to Fig. 5, the data in the former physical page at a slow speed that should be stored in physical blocks 502 can be stored in the rapid physical page of physical blocks 504.Because these data are to be stored in (shown in dotted line) in the rapid physical page, therefore, data can be difficult for making a mistake the position and lose.
In addition, when normally using the rapid physical page of physical blocks and physical page comes storage data at a slow speed, memory management circuitry 202 can be second state with the status indication of this state sign unit.
What Fig. 6 was that first exemplary embodiment is illustrated according to the present invention comes the synoptic diagram of storage data with the rapid physical page and physical page at a slow speed.
Please with reference to Fig. 6, memory management circuitry 202 is normally to use the rapid physical page of duplicative non-volatile memory module 106 and physical page at a slow speed to come storage data (shown in dotted line).Because the rapid physical page all can be used for storage data with physical page at a slow speed, therefore, the storage area of in-line memory storage device 100 can be used fully.At this, normally use the rapid physical page of duplicative non-volatile memory module 106 and physical page at a slow speed to come storage data also to be called normal storage mechanism.
In this exemplary embodiment, when receiving predetermined manufacturer's instruction (vender command) from electronic installation 1000 or other external host, memory management circuitry 202 can detected states indicates the state of unit.When if the state of state sign unit is marked as first state; Memory management circuitry 202 can automatically read the data that originally are stored in the in-line memory storage device 100, uses the rapid physical page of in-line memory storage device 100 and physical page at a slow speed to come again storage data and is second state with the status indication that state indicates the unit.That is to say that when receiving the instruction of predetermined manufacturer, memory management circuitry 202 automatically according to the state of in-line memory storage device 100, stores data to use the storage area more efficiently again.
What deserves to be mentioned is that at this, the instruction of predetermined manufacturer is to design in advance in order to start again the instruction of storage mechanism.Yet, the invention is not restricted to this, in another exemplary embodiment of the present invention, memory management circuitry 202 also can start storage mechanism again according to the information in the stereotyped command.For example, assign several continuously when host computer system and write when instruction, memory management circuitry 202 can start storage mechanism again.Perhaps, when in writing instruction, comprising special parameter, memory management circuitry 202 can start storage mechanism again.Or when the host computer system use kept the stereotyped command that defines voluntarily to the user, memory management circuitry 202 can start storage mechanism again.
Fig. 7 is the process flow diagram of the data managing method that first exemplary embodiment is illustrated according to the present invention.
Please with reference to Fig. 7, at step S701, memory management circuitry 202 can judge whether to receive the instruction of predetermined manufacturer.If when receiving the instruction of predetermined manufacturer, in step S703, memory management circuitry 202 can judge whether the state of state sign unit is marked as first state.
If state indicates when the state of unit is non-to be marked as first state, the flow process of Fig. 7 can be finished.When if the state of state sign unit is marked as first state; In step S705, memory management circuitry 202 can be used the rapid physical page of duplicative non-volatile memory module 106 and physical page at a slow speed to come to store again the data of the rapid physical page that originally has been stored in the duplicative non-volatile memory module and be second state with the status indication that state indicates the unit.
[second exemplary embodiment]
The structure of the in-line memory storage device of second exemplary embodiment is the in-line memory storage device that is same as first exemplary embodiment in essence, below will cooperate the hardware element of Fig. 2 and Fig. 3 that the difference part of second exemplary embodiment and first exemplary embodiment is described.
In second exemplary embodiment, in-line memory storage device 100 is to be adhered on the circuit substrate of electronic installation 1000 with welding manner, couples with the microprocessor with electronic installation 1000.And before welding, tentation data (the operating system image file that for example, is used for electronic installation 1000) can be stored to duplicative non-volatile memory module 106 through an imprinting mechanism.
In the record mechanism at the moment, the Memory Controller 104 of in-line memory storage device 100 only uses the rapid physical page of duplicative non-volatile memory module 106 to store tentation data.Specifically, when receiving the instruction of predetermined manufacturer from host computer system (not illustrating), memory management circuitry 202 meeting status recognitions indicate the state of unit.If state indicates the state of unit when being marked as original state, memory management circuitry 202 can only be used the rapid physical page of duplicative non-volatile memory module 106 to store tentation data (as shown in Figure 5) that host computer system desires to write and be first state with the status indication that state indicates the unit.Take this, because these data are to be stored in the rapid physical page, it is when the welding through the work board, and its data can be stablized and not be destroyed.
In addition; In this exemplary embodiment; After this in-line memory storage device 100 is in normal temperature or more stable working environment (for example; After having passed through a welding board), tentation data can be come to be stored to again in the duplicative non-volatile memory module 106 like the described storage mechanism again of first exemplary embodiment.That is, memory management circuitry 202 can be used the rapid physical page of duplicative non-volatile memory module 106 and physical page at a slow speed to come to store again the tentation data (as shown in Figure 6) of the rapid physical page that originally has been stored in duplicative non-volatile memory module 106 and be second state with the status indication that state indicates the unit.
As stated; The fiduciary level of the page is higher than the page at a slow speed fast; Therefore; Before welding, only come storage data, can effectively reduce in the process of the circuit substrate that in-line memory storage device 100 is soldered to electronic installation 1000, be stored in the data Yin Gaowen of in-line memory storage device 100 and the chance of the position of making a mistake with the quick page.Then, after welding, use the quick page and the page at a slow speed to come to store again storage area that original stored data can make in-line memory storage device 100 by more effectively utilization.
What deserves to be mentioned is that at this, the instruction of predetermined manufacturer is to design in advance in order to start imprinting mechanism and the instruction of storage mechanism again.Yet, the invention is not restricted to this, in another exemplary embodiment of the present invention, memory management circuitry 202 also can start imprinting mechanism according to the information in the stereotyped command and reach storage mechanism again.For example, assign several continuously when host computer system and write when instruction, memory management circuitry 202 can think that it belongs to a preset particular aspects and therefore starts imprinting mechanism and storage mechanism again.Perhaps, when in writing instruction, comprising special parameter, memory management circuitry 202 can start imprinting mechanism and reach storage mechanism again.Or when host computer system use to keep was given the stereotyped command that the user defines voluntarily, memory management circuitry 202 can start imprintings mechanism and storage mechanism again.
Fig. 8 is the process flow diagram of the data managing method that first exemplary embodiment is illustrated according to the present invention.
Please, in step S801, can judge whether to receive the instruction of predetermined manufacturer with reference to Fig. 8.
If when not receiving the instruction of predetermined manufacturer, then finish the flow process of Fig. 8.
If when receiving the instruction of predetermined manufacturer, in step S803, can judge whether the state of state sign unit is original state.
If state indicates the state of unit when being original state, in step S805, only use the rapid physical page of in-line memory storage device to store tentation data and be first state the status indication that state indicates the unit.At this, step S805 also is called the burning step.
If state indicates when the state of unit is non-to be original state, in step S807, can judge whether the state of state sign unit is first state.
When if the state of state sign unit is first state; In step S809, the tentation data of using the rapid physical page of in-line memory storage device and physical page at a slow speed to come to store again originally to be stored in the in-line memory storage device and be second state with the status indication that state indicates the unit.At this, step S809 also is called storing step again.
If state indicates when the state of unit is non-to be first state, then finish the flow process of Fig. 8.That is to say that non-for original state or first state and receive the instruction of predetermined manufacturer if state indicates the state of unit, then received predetermined manufacturer instruction can be left in the basket.
As stated, imprinting mechanism or again storage mechanism also can start according to the information in the stereotyped command.Therefore, in another exemplary embodiment of the present invention, the step S801 of Fig. 8 can also judge whether to receive the stereotyped command that belongs to particular aspects and replace.
[the 3rd exemplary embodiment]
According to the data managing method of second exemplary embodiment is after welding, to carry out again that storing step is stored in whole tentation data in the physical blocks of in-line memory storage device again.And the data managing method of the 3rd exemplary embodiment is the tentation data storage again in batches that when follow-up execution writes instruction, will be stored in a plurality of rapid physical pages, and can after welding, immediately all tentation datas be stored in the physical blocks of in-line memory storage device again.The structure of the in-line memory storage device of the 3rd exemplary embodiment is the in-line memory storage device that is same as first exemplary embodiment in essence, below will cooperate the hardware element of Fig. 2 and Fig. 3 that the difference part of second exemplary embodiment and first exemplary embodiment is described.
Likewise; In the 3rd exemplary embodiment; The state that receives instruction of predetermined manufacturer and state sign unit when Memory Controller 104 is an original state; Memory management circuitry 202 can only be used the rapid physical page of duplicative non-volatile memory module 106 to store tentation data (for example, as shown in Figure 5) and be first state with the status indication that state indicates the unit.
Afterwards; When Memory Controller 104 receives from electronic installation 1000 when writing when instruction or starting-up signal; Memory management circuitry 202 can judge whether store the tentation data that is write with imprinting mechanism in the physical page of desiring to write; Wherein, judgment mode can for example be through a tentation data reduction table.If when having stored the tentation data that is write with imprinting mechanism in the physical page of desiring to write, memory management circuitry 202 can be through putting this tentation data in order in the lump when execution writes instruction.That is to say that memory management circuitry 202 can use the rapid physical page and physical page at a slow speed to come to store again tentation data when execution writes instruction.That is to say that memory management circuitry 202 is when follow-up need write data, just will to be stored in the physical blocks again with the tentation data that imprinting mechanism is write in batches.
Particularly, in the 3rd exemplary embodiment, memory management circuitry 202 can be set up a tentation data reduction table and write down in order to store the physical page of the tentation data that writes with imprinting mechanism.And, when the tentation data that is stored in a certain physical page has been used normal storage mechanism and comes to store again, memory management circuitry 202 can be in this tentation data reduction table this information of record.That is to say, memory management circuitry 202 can be when execution writes instruction according to tentation data reduction show and store the tentation data that does not store again with normal storage mechanism.
Fig. 9 is the process flow diagram of the execution burning step that the 3rd exemplary embodiment is illustrated according to the present invention.
Please, in step S901, can judge whether to receive the instruction of predetermined manufacturer with reference to Fig. 9.
If when not receiving the instruction of predetermined manufacturer, then finish the flow process of Fig. 9.
If when receiving the instruction of predetermined manufacturer, in step S903, can judge whether the state of state sign unit is original state.
If state indicates the state of unit when being original state, in step S905, only use the rapid physical page of in-line memory storage device to store tentation data and be first state the status indication that state indicates the unit.At this, step S905 also is called the burning step.
Figure 10 is the process flow diagram that when execution writes instruction, tentation data is stored again that the 3rd exemplary embodiment is illustrated according to the present invention.
Please with reference to Figure 10, receive write instruction after, in step S1001, can judge whether the state that state indicates the unit is first state.
When if the state of state sign unit is first state; In step S1003; Memory management circuitry 202 can judge whether corresponding this physical page that writes instruction stores the tentation data (that is the tentation data that, does not store again with reduction normal storage mechanism as yet) that writes with imprinting mechanism according to tentation data reduction table.
If the corresponding physical page that this writes instruction stores the tentation data that writes with imprinting mechanism, in step S1005, carry out this and write instruction and use normal storage mechanism to come to store again this tentation data simultaneously.
If corresponding this physical page that writes instruction does not store the tentation data that writes with imprinting mechanism, in step S1007, carry out this and write instruction.
Afterwards, in step S1009, can reduction show to judge whether all have used normal storage mechanism to come to store again with the stored tentation data of imprinting mechanism all according to tentation data.
If all have used normal storage mechanism to come to store again with the stored tentation data of imprinting mechanism all, in step S1011, the status indication that state is indicated the unit is second state.Afterwards, finish the flow process of Figure 10.
What deserves to be mentioned is that in another exemplary embodiment of the present invention, memory management circuitry 202 stores the tentation data that is write with imprinting mechanism in the lump again in the time of also can needing moving data in damage (wear-leveling) program of on average smearing of carrying out physical blocks.Therefore, in another exemplary embodiment of the present invention, the step S1001 of Figure 10 and step S1003 can also judge whether to carry out and smear on average whether the data that damage program and judgement desire to move are to replace with the tentation data that imprinting mechanism writes.At this, on average smear the technology that the damage program is well known to those skilled in the art, be not described in detail at this.
Comprehensively above-mentioned; The data managing method of exemplary embodiment of the present invention is to use the rapid physical page and physical page at a slow speed to come to store again the data of only using the rapid physical page to store through storage mechanism again; Base this, can use the storage area of in-line memory storage device effectively.In addition, in exemplary embodiment of the present invention, imprinting mechanism only uses the rapid physical page comparatively stable in the in-line memory storage device to store tentation data.Afterwards, when the in-line memory storage device is adhered on the circuit substrate of electronic installation with welding, can avoid Yin Gaowen effectively and produce error in data.Moreover after welding, through above-mentioned reduction normal storage mechanism, the in-line memory storage device can normally carry out the access of data according to the instruction of electronic installation.Base this, the data managing method of exemplary embodiment of the present invention, Memory Controller and in-line memory storage device can be avoided the data loss that produced because of welding effectively.
Though the present invention discloses as above with embodiment; Right its is not in order to limit the present invention; Has common knowledge the knowledgeable in the technical field under any; Do not breaking away from the spirit and scope of the present invention, when doing a little change and retouching, so protection scope of the present invention is as the criterion when looking appended the claim scope person of defining.
Claims (31)
1. data managing method that is used for the in-line memory storage device; Wherein this in-line memory storage device has a plurality of physical blocks and this a plurality of physical blocks have a plurality of rapid physical pages and a plurality of physical page at a slow speed, and this data managing method comprises:
Detect the state that a state indicates the unit; Wherein when only these a plurality of rapid physical pages of part are used to store data at least; This state that this state indicates the unit is marked as one first state; And when at least partly these a plurality of physical pages at a slow speed were used to store these data, this state that this state indicates the unit was marked as one second state; And
When this state of this state sign unit is marked as this first state; Automatically read these data, use part this a plurality of rapid physical pages and these a plurality of physical pages at a slow speed at least to come to store again these data simultaneously and be this second state the status indication of this state sign unit.
2. data managing method according to claim 1 also comprises:
Receive at least one stereotyped command from a host computer system;
Judge whether this at least one stereotyped command belongs to a particular aspects; And
Only when this at least one stereotyped command belongs to this particular aspects, just detect the state that this state indicates the unit.
3. data managing method according to claim 1, wherein using at least simultaneously, these a plurality of rapid physical pages of part comprise with the step that these a plurality of physical pages at a slow speed come to store again these data:
A plurality ofly write instruction and use simultaneously at least that part this a plurality of rapid physical pages and these a plurality of physical pages at a slow speed come to store again these data through what execution came from a host computer system.
4. Memory Controller; Be used for being configured in an in-line memory storage device to manage a duplicative non-volatile memory module of this in-line memory storage device; Wherein this duplicative non-volatile memory module has a plurality of physical blocks and each these a plurality of physical blocks has a plurality of rapid physical pages and a plurality of physical page at a slow speed, and this Memory Controller comprises:
One HPI is in order to be coupled to a host computer system;
One memory interface is in order to be coupled to this duplicative non-volatile memory module; And
One memory management circuitry is coupled to this HPI and this memory interface,
Wherein this memory management circuitry is in order to detect the state that a state indicates the unit, and wherein when only these a plurality of rapid physical pages of part were used to store data at least, this state that this state indicates the unit was marked as one first state,
Wherein when this state of this state sign unit is marked as this first state; This memory management circuitry automatically reads these data, uses part this a plurality of rapid physical pages and these a plurality of physical pages at a slow speed at least to come to store again these data simultaneously and is one second state with the status indication of this state sign unit.
5. Memory Controller according to claim 4, wherein this memory management circuitry receives at least one stereotyped command and judges whether this at least one stereotyped command belongs to a particular aspects from a host computer system,
Wherein only when this at least one stereotyped command belongs to this particular aspects, this memory management circuitry just detects the state that this state indicates the unit.
6. Memory Controller according to claim 4, wherein this memory management circuitry a plurality ofly writes instruction and uses simultaneously at least that part this a plurality of rapid physical pages and these a plurality of physical pages at a slow speed come to store again these data through what execution came from a host computer system.
7. in-line memory storage device comprises:
A connector is in order to be coupled to a host computer system;
One duplicative non-volatile memory module has a plurality of physical blocks and each these a plurality of physical blocks and has a plurality of rapid physical pages and physical page at a slow speed; And
One Memory Controller is coupled to this connector and this duplicative non-volatile memory module,
Wherein this Memory Controller is in order to detect the state that a state indicates the unit, and wherein when only these a plurality of rapid physical pages of part were used to store data at least, this state that this state indicates the unit was marked as one first state,
Wherein when this state of this state sign unit is marked as this first state; This Memory Controller automatically reads these data, uses part this a plurality of rapid physical pages and these a plurality of physical pages at a slow speed at least to come to store again these data simultaneously and is one second state with the status indication of this state sign unit.
8. in-line memory storage device according to claim 7, wherein this Memory Controller receives at least one stereotyped command and judges whether this at least one stereotyped command belongs to a particular aspects from a host computer system,
Wherein only when this at least one stereotyped command belongs to this particular aspects, this Memory Controller just detects the state that this state indicates the unit.
9. in-line memory storage device according to claim 7, wherein this Memory Controller a plurality ofly writes instruction and uses simultaneously at least that part this a plurality of rapid physical pages and these a plurality of physical pages at a slow speed come to store again these data through what execution came from a host computer system.
10. data managing method that is used for the in-line memory storage device; Wherein this in-line memory storage device has a plurality of physical blocks and each these a plurality of physical blocks has a plurality of rapid physical pages and a plurality of physical page at a slow speed, and this data managing method comprises:
One burning step; Store this tentation data and be one first state with the status indication that a state indicates the unit in order to these a plurality of rapid physical pages that only use this in-line memory storage device, wherein to indicate unit be to be stored in this in-line memory storage device to this state; And
One storing step again comes to store again this tentation data and is one second state with this status indication of this state sign unit in order to these a plurality of rapid physical pages and this a plurality of physical pages at a slow speed that use this in-line memory storage device.
11. data managing method according to claim 10 also comprises:
This state that this state is indicated the unit initially is labeled as an original state;
Judge whether to receive predetermined manufacturer instruction from a host computer system;
Whether this state of judging this state sign unit is this original state; And
Only when this state that receives this predetermined manufacturer instruction and this state sign unit is this original state, just carry out this burning step.
12. data managing method according to claim 10 also comprises:
Judge whether to receive predetermined manufacturer instruction from a host computer system;
Whether this state of judging this state sign unit is this first state; And
Only when this state that receives this predetermined manufacturer instruction and this state sign unit is this first state, just carry out this storing step again.
13. data managing method according to claim 10 also comprises:
This state that this state is indicated the unit initially is labeled as an original state;
Receive at least one stereotyped command from a host computer system;
Judge whether this at least one stereotyped command belongs to a particular aspects;
Whether this state of judging this state sign unit is this original state; And
Only when this at least one stereotyped command belongs to this state that this particular aspects and this state indicate the unit for this original state, just carry out this burning step.
14. data managing method according to claim 10 also comprises:
Receive at least one stereotyped command from a host computer system;
Judge whether this at least one stereotyped command belongs to a particular aspects;
Whether this state of judging this state sign unit is this first state; And
Only when this at least one stereotyped command belongs to this state that this particular aspects and this state indicate the unit for this first state, just carry out this storing step again.
15. data managing method according to claim 10 also comprises:
Through execution come from a host computer system a plurality of write instruction carry out this again storing step with in this a plurality of rapid physical pages and these a plurality of physical pages at a slow speed of this tentation data being stored in batches again this in-line memory storage device.
16. data managing method according to claim 10 also comprises:
, this in-line memory storage device is adhered on the circuit substrate with a welding manner again between the storing step at this burning step and this.
17. data managing method according to claim 10 also comprises:
Should a plurality of physical blocks be grouped into a storage area and a system region at least, wherein this state sign unit is stored in these a plurality of physical blocks of this system region.
18. Memory Controller; Be used for being configured in an in-line memory storage device to manage a duplicative non-volatile memory module of this in-line memory storage device; Wherein this duplicative non-volatile memory module has a plurality of physical blocks and each these a plurality of physical blocks has a plurality of rapid physical pages and a plurality of physical page at a slow speed, and this Memory Controller comprises:
One HPI is in order to be coupled to a host computer system;
One memory interface is in order to be coupled to this duplicative non-volatile memory module; And
One memory management circuitry is coupled to this HPI and this memory interface, and wherein this memory management circuitry is in order to only using these a plurality of rapid physical pages and store a tentation data and to be one first state with the status indication that a state indicates the unit,
Wherein this memory management circuitry is also in order to using these a plurality of rapid physical pages and this a plurality of physical pages at a slow speed to come to store again this tentation data and to be one second state with this status indication of this state sign unit,
Wherein this memory management circuitry is to be stored in this duplicative non-volatile memory module with this state sign unit.
19. Memory Controller according to claim 15, wherein this memory management circuitry initially is labeled as an original state with this state that this state indicates the unit,
Wherein only when this memory management circuitry receives this state that a predetermined manufacturer instruction and this state indicate the unit for this original state from this host computer system, this memory management circuitry is just only used these a plurality of rapid physical pages to write this tentation data and is this first state with this status indication that this state indicates the unit.
20. Memory Controller according to claim 15; Wherein only when this memory management circuitry when this host computer system receives this state that a predetermined manufacturer instruction and this state indicate the unit for this first state, this memory management circuitry is just used these a plurality of rapid physical pages and this a plurality of physical pages at a slow speed to come to store again this tentation data and is this second state with this status indication of this state sign unit.
21. Memory Controller according to claim 18, wherein this memory management circuitry initially is labeled as an original state with this state that this state indicates the unit,
Wherein only when this memory management circuitry when this host computer system receives this state that at least one stereotyped command of belonging to a particular aspects and this state indicate the unit for this original state, this memory management circuitry is just only used these a plurality of rapid physical pages to write this tentation data and is this first state with this status indication that this state indicates the unit.
22. Memory Controller according to claim 18; Wherein only when this memory management circuitry when this host computer system receives this state that at least one stereotyped command of belonging to a particular aspects and this state indicate the unit for this first state, this memory management circuitry is just used these a plurality of rapid physical pages and this a plurality of physical pages at a slow speed to come to store again this tentation data and is this second state with this status indication of this state sign unit.
23. Memory Controller according to claim 18; Wherein this memory management circuitry a plurality ofly writes instruction through what execution came from this host computer system, this tentation data is stored in batches again in these a plurality of rapid physical pages and these a plurality of physical pages at a slow speed.
24. Memory Controller according to claim 18, wherein this memory management circuitry should a plurality of physical blocks be grouped into a storage area and a system region at least, and this state sign unit is stored in these a plurality of physical blocks of this system region.
25. an in-line memory storage device comprises:
A connector is in order to be coupled to a host computer system;
One duplicative non-volatile memory module has a plurality of physical blocks and each these a plurality of physical blocks and has a plurality of rapid physical pages and physical page at a slow speed; And
One Memory Controller is coupled to this connector and this duplicative non-volatile memory module,
Wherein this Memory Controller is in order to only using these a plurality of rapid physical pages and store a tentation data and to be one first state with the status indication that a state indicates the unit,
Wherein this Memory Controller is more in order to using these a plurality of rapid physical pages and this a plurality of physical pages at a slow speed to come to store again this tentation data and to be one second state with this status indication of this state sign unit,
Wherein this Memory Controller is to be stored in this duplicative non-volatile memory module with this state sign unit.
26. in-line memory storage device according to claim 25, wherein this Memory Controller initially is labeled as an original state with this state that this state indicates the unit,
Wherein only when this controller receives this state that a predetermined manufacturer instruction and this state indicate the unit for this original state from this host computer system, this Memory Controller just only uses these a plurality of rapid physical pages to write this tentation data and is this first state with this status indication that this state indicates the unit.
27. in-line memory storage device according to claim 25; Wherein only when this Memory Controller when this host computer system receives this state that a predetermined manufacturer instruction and this state indicate the unit for this first state, this Memory Controller just uses these a plurality of rapid physical pages and this a plurality of physical pages at a slow speed to come to store again this tentation data and is this second state with this status indication of this state sign unit.
28. in-line memory storage device according to claim 25, wherein this Memory Controller initially is labeled as an original state with this state that this state indicates the unit,
Wherein only when this Memory Controller when this host computer system receives this state that at least one stereotyped command of belonging to a particular aspects and this state indicate the unit for this original state, this Memory Controller just only uses these a plurality of rapid physical pages to write this tentation data and is this first state with this status indication that this state indicates the unit.
29. in-line memory storage device according to claim 25; Wherein only when this Memory Controller when this host computer system receives this state that at least one stereotyped command of belonging to a particular aspects and this state indicate the unit for this first state, this Memory Controller just uses these a plurality of rapid physical pages and this a plurality of physical pages at a slow speed to come to store again this tentation data and is this second state with this status indication of this state sign unit.
30. in-line memory storage device according to claim 25; Wherein this Memory Controller a plurality ofly writes instruction through what execution came from this host computer system, this tentation data is stored in batches again in these a plurality of rapid physical pages and these a plurality of physical pages at a slow speed.
31. in-line memory storage device according to claim 25; Wherein this Memory Controller should a plurality of physical blocks be grouped into a storage area and a system region at least, and this state sign unit is stored in these a plurality of physical blocks of this system region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110002442.6A CN102591738B (en) | 2011-01-07 | 2011-01-07 | Data managing method, Memory Controller and in-line memory storage device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110002442.6A CN102591738B (en) | 2011-01-07 | 2011-01-07 | Data managing method, Memory Controller and in-line memory storage device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102591738A true CN102591738A (en) | 2012-07-18 |
| CN102591738B CN102591738B (en) | 2015-09-30 |
Family
ID=46480441
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110002442.6A Active CN102591738B (en) | 2011-01-07 | 2011-01-07 | Data managing method, Memory Controller and in-line memory storage device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102591738B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103914360A (en) * | 2013-01-05 | 2014-07-09 | 联想(北京)有限公司 | Electronic device and data backup restoring method |
| CN104050099A (en) * | 2013-03-15 | 2014-09-17 | 三星电子株式会社 | Nonvolatile storage device and operating system (OS) image program method thereof |
| CN114974333A (en) * | 2022-07-28 | 2022-08-30 | 深圳佰维存储科技股份有限公司 | EMMC data protection method and device, readable storage medium and electronic equipment |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7017038B1 (en) * | 2002-08-26 | 2006-03-21 | Network Equipment Technologies, Inc. | Method and system to provide first boot to a CPU system |
| CN101147133A (en) * | 2005-02-16 | 2008-03-19 | 桑迪士克股份有限公司 | Direct file data programming and deletion in flash memories |
| US20100017561A1 (en) * | 2008-07-18 | 2010-01-21 | Xueshi Yang | Selectively accessing memory |
| TW201025468A (en) * | 2008-12-25 | 2010-07-01 | Silicon Motion Inc | Method of preventing data loss during a solder reflow process and memory device using the same |
| CN101923516A (en) * | 2009-05-15 | 2010-12-22 | 旺宏电子股份有限公司 | Block-based flash memory and its operation method |
-
2011
- 2011-01-07 CN CN201110002442.6A patent/CN102591738B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7017038B1 (en) * | 2002-08-26 | 2006-03-21 | Network Equipment Technologies, Inc. | Method and system to provide first boot to a CPU system |
| CN101147133A (en) * | 2005-02-16 | 2008-03-19 | 桑迪士克股份有限公司 | Direct file data programming and deletion in flash memories |
| US20100017561A1 (en) * | 2008-07-18 | 2010-01-21 | Xueshi Yang | Selectively accessing memory |
| TW201025468A (en) * | 2008-12-25 | 2010-07-01 | Silicon Motion Inc | Method of preventing data loss during a solder reflow process and memory device using the same |
| CN101923516A (en) * | 2009-05-15 | 2010-12-22 | 旺宏电子股份有限公司 | Block-based flash memory and its operation method |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103914360A (en) * | 2013-01-05 | 2014-07-09 | 联想(北京)有限公司 | Electronic device and data backup restoring method |
| CN104050099A (en) * | 2013-03-15 | 2014-09-17 | 三星电子株式会社 | Nonvolatile storage device and operating system (OS) image program method thereof |
| CN104050099B (en) * | 2013-03-15 | 2018-06-19 | 三星电子株式会社 | Non-volatile memory device and its operating system（OS）Image processing method |
| CN108804041A (en) * | 2013-03-15 | 2018-11-13 | 三星电子株式会社 | Non-volatile memory device and its operating system（OS）Image processing method |
| CN108804041B (en) * | 2013-03-15 | 2020-05-26 | 三星电子株式会社 | Nonvolatile memory device and Operating System (OS) image processing method thereof |
| CN114974333A (en) * | 2022-07-28 | 2022-08-30 | 深圳佰维存储科技股份有限公司 | EMMC data protection method and device, readable storage medium and electronic equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102591738B (en) | 2015-09-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9268687B2 (en) | Data writing method, memory control circuit unit and memory storage apparatus | |
| US8131911B2 (en) | Data writing method, and flash storage system and controller using the same | |
| US20150268879A1 (en) | Memory management method, memory storage device and memory control circuit unit | |
| US9552287B2 (en) | Data management method, memory controller and embedded memory storage apparatus using the same | |
| CN101625897B (en) | Data write-in method, storage system and controller used for quick flash memory | |
| US9383929B2 (en) | Data storing method and memory controller and memory storage device using the same | |
| CN104765569A (en) | Data write-in method, memory control circuit unit and memory storing device | |
| CN103377129A (en) | Data writing-in method, memory controller and memory storage device | |
| CN101667157A (en) | Flash memory data transmission method, flash memory storage system and controller | |
| CN102902626B (en) | Block management method, Memory Controller and memorizer memory devices | |
| CN107357520B (en) | Finishing instruction processing method, memory control circuit unit and memory device thereof | |
| CN102890655A (en) | Memory storage device, memory controller and valid data recognition method thereof | |
| CN103678162B (en) | System data storage method, memory controller and memory storage device | |
| CN103136111A (en) | Data writing method, memorizer controller and memorizer storage device | |
| CN102866861B (en) | Flash memory system, flash controller and method for writing data | |
| CN103218300B (en) | Data processing method, Memory Controller and memorizer memory devices | |
| CN102800357B (en) | Procedure code is written into and access method, Memory Controller and memorizer memory devices | |
| US11347433B2 (en) | Method for performing sudden power off recovery management, associated memory device and controller thereof, and associated electronic device | |
| US9778862B2 (en) | Data storing method for preventing data losing during flush operation, memory control circuit unit and memory storage apparatus | |
| CN102591738B (en) | Data managing method, Memory Controller and in-line memory storage device | |
| CN102053920B (en) | Data writing method, flash memory controller and flash memory system | |
| CN102467459B (en) | Data write method, memory controller and memory device | |
| CN104166558A (en) | Firmware code loading method, memorizer controller and memorizer memory device | |
| US20130246687A1 (en) | Data writing method, memory controller and memory storage apparatus | |
| CN103377132A (en) | Memory space management method, memory controller and memory storage device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |