CN102706276A - Planar periodic structure measurement device and measurement method - Google Patents
Planar periodic structure measurement device and measurement method Download PDFInfo
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- CN102706276A CN102706276A CN2012101681326A CN201210168132A CN102706276A CN 102706276 A CN102706276 A CN 102706276A CN 2012101681326 A CN2012101681326 A CN 2012101681326A CN 201210168132 A CN201210168132 A CN 201210168132A CN 102706276 A CN102706276 A CN 102706276A
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Abstract
The invention discloses a planar periodic structure measurement device and a measurement method. The device comprises a laser, a sample bracket, a horizontal tray, a rotary table, a freely rotating round disc, and a beam angle measurement element, wherein the sample bracket is fixed on the top of the horizontal tray; the bottom of the horizontal tray is connected with the rotary table; the rotary table is used for changing the direction and position of the horizontal tray; the circumference of the upper edge of the upper surface of the rotary table is graduated with angle scales; the freely rotating round disc is coaxially connected with the rotary table; and the beam angle measurement element is fixed on the freely rotating round disc. The planar periodic structure measurement device provided by the invention has the advantages that the laser beam generated by the laser is incident to the to-be-measured surface of a sample, and the included angle between the diffracting beam and the normal line of the to-be-measured surface of the sample is measured by the beam angle measurement element, so that the periodic size of the sample can be calculated according to the included angle, thereby realizing high measurement accuracy and quick measurement. Additionally, the device is simple in structure and low in cost by only using the laser and the beam angle measurement element.
Description
Technical field
The present invention relates to a kind of measuring technique of periodic structure, especially relate to a kind of measurement mechanism and measuring method of plan periodic structure.
Background technology
The modern material the reach of science depends on the understanding of material property with other constituent structure and pattern membership credentials to a great extent.Therefore, to the various measuring technologies of material property with to the characterization technique of material on the microcosmic level, constituted an important component part of material science.This makes material analysis become the research means of material science, is widely used in research and solves materials theory and engineering problem.The basic skills of the sign of general material structure comprises: chemical composition analysis, structure determination, morphology observation etc.
And at present, along with the fast development of the little manufacturing of optics, process technology, design and the optoelectronic device for preparing all kinds of sub-micron, nano-scale becomes an important directions of current laboratory study and production application.Decide the related physical performance of a device because general photonic device is many through type physical arrangement, pattern, thereby this moment, the morphology observation technology promptly became an important technical of characterizing device pattern.Special, since the breadboard Miller of U.S. Bell in 1969 proposes the notion of " integrated optics " first, and optical fiber communication rises the opportunity that is provided, and makes people develop a series of high-performance integrated photonic device that is used for optical communication and sensing.And; Since Eli Yablonovitch in 1987 and Sajeev John propose the notion of photonic crystal (PCs) respectively first; Its quilt design that is applied to all kinds of novel photonic devices and application more and more widely; And photonic crystal has the structure of some cycles property distribution as one type by manual work design and the dielectric constant made, because it can realize not having excellent properties such as tunnelling ray loss transmission, therefore to high density is integrated very important meaning is arranged.
Generally, similar this type of photonic crystal submicron periodic structure has been widely used in the devices such as broad band pass filter, sub-wave length grating, photonic crystal fiber.At present; The method of measuring submicron periodic structure adopts scanning electron microscope (SEM mostly; Scanning Electron Microscope), atomic force microscope (AFM; Atomic Force Microscope), equipment such as step appearance carries out direct pattern and characterizes; But often need the simple structures such as cycle size of the sample of quick, easy, economic test system sometimes for general sub-micron periodic optical grating, plan periodic structure etc., and generally such as scanning electron microscope, cost an arm and a leg, use (test) cost high first; Second complex operation, testing process numerous and diverse, need special messenger's operational testing, use inconvenience; Three cycle sizes that only need record structure sometimes get final product with for referencial use; Might not check that complete pattern characterizes; Bring inconvenience therefore not only for actual operational applications, and cause unnecessary waste easily.On the other hand, since sub-micron (hundreds of nanometer) periodic structure near the general visible wavelength, so general optical grating diffraction theory is inapplicable.Therefore, need badly research a kind of simple and easy, test the experimental technique of multiple plan periodic structure fast.
Summary of the invention
Technical matters to be solved by this invention provide a kind of simple in structure, cost is low, the measurement mechanism of easy to operate plan periodic structure fast and measuring method.
The present invention solves the problems of the technologies described above the technical scheme that is adopted: a kind of measurement mechanism of plan periodic structure; It is characterized in that comprising laser instrument, specimen holder, level tray, universal stage, rotate freely disk and beam angle measuring sensor; The laser that described laser instrument sends incides on the surface to be measured of the sample that is placed on the described specimen holder; Described specimen holder is fixed in the top of described level tray; The bottom of described level tray is provided with the vernier adjustment knob that the initial position that is used to adjust described level tray makes the Surface Vertical to be measured of laser that described laser instrument sends and described sample; The bottom of described level tray is connected with described universal stage, and described universal stage is used to change the orientation of described level tray, and the upper surface upper edge circumference of described universal stage is provided with alidade; The precision of the angle index of described alidade is " 1 ' "; The described disk that rotates freely is connected with described universal stage is coaxial, and described beam angle measuring sensor is fixed in described rotating freely on the disk, and described beam angle measuring sensor is used to measure the angle of the normal to a surface to be measured of diffracted beam and described sample.
It is the He-Ne laser instrument of 632.8nm that described laser instrument adopts wavelength.
Described beam angle measuring sensor comprises a steel cylinder, and the centre mark of an end face of described steel cylinder has crosshair, and this end face is near described specimen holder.
A kind of measuring method of using above-mentioned measurement mechanism measurement plane periodic structure is characterized in that may further comprise the steps:
1. open laser instrument, and make its preheating about 20 minutes;
2. sample is fixed on the specimen holder, utilizes the initial position of the vernier adjustment knob adjustment level tray of the bottom be arranged at level tray then, make the laser that energizer sends and the Surface Vertical to be measured of sample;
3. adjust laser instrument, specimen holder and beam angle measuring sensor relative altitude position in vertical direction, the central spot that makes laser, the central point that is placed in the sample on the specimen holder and beam angle measuring sensor that laser instrument sends is on same surface level;
4. the bottom with level tray is fixedly connected with universal stage, rotates the orientation that universal stage changes level tray then, suppose that the incident angle that laser that laser instrument at this moment sends incides the surface to be measured of sample is θ;
5. rotary beam measurement of angle element; Make its center over against diffracted beam, the angle
of the normal to a surface to be measured of diffracted beam and sample when the incident angle that the laser that the Laser Measurement device sends incides the surface to be measured of sample is θ
6. extrapolate the cycle size of sample according to the angle
of the normal to a surface to be measured of diffracted beam and sample.
Compared with prior art, the invention has the advantages that:
1) apparatus of the present invention utilize laser instrument its laser that sends to be incided on the surface to be measured of the sample that is placed on the specimen holder; Measure the angle of the normal to a surface to be measured of diffracted beam and sample through being fixed in the beam angle measuring sensor that rotates freely on the disk then; Can extrapolate the cycle size of sample like this according to the angle of the normal to a surface to be measured of diffracted beam and sample; The precision of the cycle size that not only records is high, and fast.
2) apparatus of the present invention and method are except that being used in common planar (one dimension, two dimension) periodic structure; Also be applicable to dot matrix pattern relative complex; Levy the measurement of structure such as the plane hand; Compare such as scanning electron microscopy measurement with employing, its measuring relative errors is in 5%, and measuring accuracy is high.
3) apparatus of the present invention have only been used 632.8nmHe-Ne laser instrument commonly used and the beam angle measuring sensor to build after the spectrometer repacking commonly used; Therefore simple in structure, cost is low; And easy and simple to handle, quick, be highly suitable for the quick measurement of plan periodic structure.
Description of drawings
Fig. 1 is the structural representation of the measurement mechanism of plan periodic structure of the present invention;
Fig. 2 is the SEM figure of first sample;
Fig. 3 is the SEM figure of second sample;
Fig. 4 is the SEM figure of the 3rd sample.
Embodiment
Embodiment describes in further detail the present invention below in conjunction with accompanying drawing.
Embodiment one:
The measurement mechanism of a kind of plan periodic structure that the present invention proposes; As shown in Figure 1; It comprises laser instrument 1, specimen holder 2, level tray 3, universal stage 4, rotates freely disk 5 and beam angle measuring sensor 6; The laser that laser instrument 1 sends incides on the surface to be measured of the sample (not shown) that is placed on the specimen holder 2, and the laser that laser instrument 1 sends is through the center of level tray 3, and specimen holder 2 is fixed in the top of level tray 3; The bottom of level tray 3 is provided with the vernier adjustment knob (not shown) that three initial positions that are used to adjust level tray 3 make the Surface Vertical to be measured of laser that laser instrument 1 sends and sample; The bottom of level tray 3 is connected with universal stage 4, and universal stage 4 is used to change the orientation of level tray 3, and the upper surface upper edge circumference of universal stage 4 is provided with the alidade (not shown); The precision of the angle index (not shown) of alidade is " 1 ' "; Rotate freely disk 5 and 4 coaxial connections of universal stage, beam angle measuring sensor 6 is fixed in and rotates freely on the disk 5, and beam angle measuring sensor 6 is used to measure the angle of the normal to a surface to be measured of diffracted beam and sample.At this; Be utilized in the angle index of the upper surface upper edge circumference setting of universal stage 4; Can read the angle that beam angle measuring sensor 6 is rotated through easily, the precision of angle index is made as " 1 ' ", can make according to test philosophy and calculate that the I of actual measurement cycle precision reaches 0.1nm.
In this specific embodiment, it is the He-Ne laser instrument of 632.8nm that laser instrument 1 adopts wavelength.At this, beam angle measuring sensor 6 comprises a steel cylinder 61, and the centre mark of an end face of steel cylinder 61 has crosshair 62, and this end face near specimen holder 2 promptly towards specimen holder 2.When this beam angle measuring sensor 6 of actual fabrication, also can directly use the telescope parts of existing spectrometer, attach the circular hard paper that indicates crosshair with the center at its end face behind removal object lens, the eyepiece near specimen holder 2.
In this specific embodiment, employed sample is based on the prepared planar-periodic pattern that forms of beamwriter lithography.Fig. 2 has provided the SEM figure of first sample, and it is the relative simple plane periodic structure of a kind of dot matrix pattern, is 509.7nm through its cycle of scanning electron microscope test; Fig. 3 has provided the SEM figure of second sample, and it is that a kind of dot matrix pattern is windmill-shaped plane hand and levies periodic structure, is 515.8nm through its cycle of scanning electron microscope test; Fig. 4 has provided the SEM figure of the 3rd sample, and it is that the slightly rectangular plane hand of a kind of dot matrix pattern is levied structure, is 414.3nm through its cycle of scanning electron microscope test.
Embodiment two:
A kind of measuring method of application implementation example one described measurement mechanism measurement plane periodic structure, it may further comprise the steps:
1. open laser instrument 1, and make its preheating about 20 minutes.
2. first sample is fixed on the specimen holder 2, utilizes the initial position of the vernier adjustment knob adjustment level tray 3 of the bottom be arranged at level tray 3 then, make the laser that energizer 1 sends and the Surface Vertical to be measured of first sample.
3. adjust laser instrument, specimen holder and beam angle measuring sensor relative altitude position in vertical direction; The central spot that makes laser, the central point that is placed in the sample on the specimen holder and beam angle measuring sensor that laser instrument sends can effectively improve measuring accuracy like this on same surface level.
4. the bottom with level tray 3 is fixedly connected with universal stage 4, rotates the orientation that universal stage 4 changes level trays 3 then, and the incident angle θ that makes laser that this moment, laser instrument 1 sent incide the surface to be measured of first sample is 20 degree.
5. rotary beam measurement of angle element 6; Make its center over against diffracted beam, the incident angle θ that the laser that Laser Measurement device 1 sends incides the surface to be measured of first sample is that the angle
of the normal to a surface to be measured of 20 diffracted beams when spending and first sample is 66.7 degree.
6. extrapolate the cycle size of first sample according to the angle
of the normal to a surface to be measured of diffracted beam and first sample.Because according to when light beam irradiates is on periodic structure; Each periodic unit all can the reflecting part light beam; So each periodic unit promptly can be used as wavefront one by one; On the different directions angle, produce disappear mutually, constructive interference, therefore can extrapolate the cycle size of periodic structure according to incident angle and angle of diffraction.
7. rotate the orientation that universal stage 4 changes level tray 3 by same direction; The incident angle θ that the laser that laser instrument 1 is sent incides the surface to be measured of first sample is respectively 39.3 degree, 60 degree, 80 degree; At incident angle θ is 39.3 when spending, and the angle
that records the normal to a surface to be measured of diffracted beam and first sample according to step operating process 5. is 39.3 degree; At incident angle θ is 60 when spending, and the angle
that records the normal to a surface to be measured of diffracted beam and first sample according to step operating process 5. is 22.9 degree; At incident angle θ is 80 when spending, and the angle
that records the normal to a surface to be measured of diffracted beam and first sample according to step operating process 5. is 15.6 degree.
Table 1 has been listed the relative error in the cycle of the sample that scanning electron microscope and the inventive method record, and the data listed from table 1 can draw, and the relative error in the cycle of the sample that scanning electron microscope and the inventive method record is less than 2%, average out to 1.4%.
The relative error in the cycle of first sample that table 1 scanning electron microscope and the inventive method record
Embodiment three:
The measuring method of present embodiment is identical with the measuring method of embodiment two, just sample is changed to second sample and measures, and it may further comprise the steps:
1. open laser instrument 1, and make its preheating about 20 minutes.
2. second sample is fixed on the specimen holder 2, utilizes the initial position of the vernier adjustment knob adjustment level tray 3 of the bottom be arranged at level tray 3 then, make the laser that energizer 1 sends and the Surface Vertical to be measured of second sample.
3. adjust laser instrument, specimen holder and beam angle measuring sensor relative altitude position in vertical direction; The central spot that makes laser, the central point that is placed in the sample on the specimen holder and beam angle measuring sensor that laser instrument sends can effectively improve measuring accuracy like this on same surface level.
4. the bottom with level tray 3 is fixedly connected with universal stage 4, rotates the orientation that universal stage 4 changes level trays 3 then, and the incident angle θ that makes laser that this moment, laser instrument 1 sent incide the surface to be measured of second sample is 20 degree.
5. rotary beam measurement of angle element 6; Make its center over against diffracted beam, the incident angle θ that the laser that Laser Measurement device 1 sends incides the surface to be measured of second sample is that the angle
of the normal to a surface to be measured of 20 diffracted beams when spending and second sample is 67 degree.
6. extrapolate the cycle size of second sample according to the angle
of the normal to a surface to be measured of diffracted beam and second sample.
7. rotate the orientation that universal stage 4 changes level tray 3 by same direction; The incident angle θ that the laser that laser instrument 1 is sent incides the surface to be measured of second sample is respectively 39.3 degree, 60 degree, 80 degree; At incident angle θ is 39.3 when spending, and the angle
that records the normal to a surface to be measured of diffracted beam and second sample according to step operating process 5. is 39.3 degree; At incident angle θ is 60 when spending, and the angle
that records the normal to a surface to be measured of diffracted beam and second sample according to step operating process 5. is 22.4 degree; At incident angle θ is 80 when spending, and the angle
that records the normal to a surface to be measured of diffracted beam and second sample according to step operating process 5. is 15.1 degree.
Table 2 has been listed the relative error in the cycle of the sample that scanning electron microscope and the inventive method record, and the data listed from table 2 can draw, and the relative error in the cycle of the sample that scanning electron microscope and the inventive method record is less than 4%, average out to 2.3%.
The relative error in the cycle of second sample that table 2 scanning electron microscope and the inventive method record
Embodiment four:
The measuring method of present embodiment is identical with the measuring method of embodiment two, just sample is changed to the 3rd sample and measures, and it may further comprise the steps:
1. open laser instrument 1, and make its preheating about 20 minutes.
2. the 3rd sample is fixed on the specimen holder 2, utilizes the initial position of the vernier adjustment knob adjustment level tray 3 of the bottom be arranged at level tray 3 then, make the laser that energizer 1 sends and the Surface Vertical to be measured of the 3rd sample.
3. adjust laser instrument, specimen holder and beam angle measuring sensor relative altitude position in vertical direction; The central spot that makes laser, the central point that is placed in the sample on the specimen holder and beam angle measuring sensor that laser instrument sends can effectively improve measuring accuracy like this on same surface level.
4. the bottom with level tray 3 is fixedly connected with universal stage 4, rotates the orientation that universal stage 4 changes level trays 3 then, and the incident angle θ that makes laser that this moment, laser instrument 1 sent incide the surface to be measured of the 3rd sample is 40 degree.
5. rotary beam measurement of angle element 6; Make its center over against diffracted beam, the incident angle θ that the laser that Laser Measurement device 1 sends incides the surface to be measured of the 3rd sample is that the angle
of the normal to a surface to be measured of 40 diffracted beams when spending and the 3rd sample is 70 degree.
6. extrapolate the cycle size of the 3rd sample according to the angle
of the normal to a surface to be measured of diffracted beam and the 3rd sample.
7. rotate the orientation that universal stage 4 changes level tray 3 by same direction; The incident angle θ that the laser that laser instrument 1 is sent incides the surface to be measured of the 3rd sample is respectively 52.4 degree, 60 degree, 80 degree; At incident angle θ is 52.4 when spending, and the angle
that records the normal to a surface to be measured of diffracted beam and the 3rd sample according to step operating process 5. is 52.4 degree; At incident angle θ is 60 when spending, and the angle
that records the normal to a surface to be measured of diffracted beam and the 3rd sample according to step operating process 5. is 45.1 degree; At incident angle θ is 80 when spending, and the angle
that records the normal to a surface to be measured of diffracted beam and the 3rd sample according to step operating process 5. is 36.1 degree.
Table 3 has been listed the relative error in the cycle of the sample that scanning electron microscope and the inventive method record, and the data listed from table 3 can draw, and the relative error in the cycle of the sample that scanning electron microscope and the inventive method record is less than 4%, average out to 3.3%.
The relative error in the cycle of the 3rd sample that table 3 scanning electron microscope and the inventive method record
Claims (4)
1. the measurement mechanism of a plan periodic structure; It is characterized in that comprising laser instrument, specimen holder, level tray, universal stage, rotate freely disk and beam angle measuring sensor; The laser that described laser instrument sends incides on the surface to be measured of the sample that is placed on the described specimen holder; Described specimen holder is fixed in the top of described level tray; The bottom of described level tray is provided with the vernier adjustment knob that the initial position that is used to adjust described level tray makes the Surface Vertical to be measured of laser that described laser instrument sends and described sample; The bottom of described level tray is connected with described universal stage, and described universal stage is used to change the orientation of described level tray, and the upper surface upper edge circumference of described universal stage is provided with alidade; The precision of the angle index of described alidade is " 1 ' "; The described disk that rotates freely is connected with described universal stage is coaxial, and described beam angle measuring sensor is fixed in described rotating freely on the disk, and described beam angle measuring sensor is used to measure the angle of the normal to a surface to be measured of diffracted beam and described sample.
2. the measurement mechanism of a kind of plan periodic structure according to claim 1 is characterized in that it is the He-Ne laser instrument of 632.8nm that described laser instrument adopts wavelength.
3. the measurement mechanism of a kind of plan periodic structure according to claim 1 and 2; It is characterized in that described beam angle measuring sensor comprises a steel cylinder; The centre mark of an end face of described steel cylinder has crosshair, and this end face is near described specimen holder.
4. an application rights requires the measuring method of 1 described measurement mechanism measurement plane periodic structure, it is characterized in that may further comprise the steps:
1. open laser instrument, and make its preheating about 20 minutes;
2. sample is fixed on the specimen holder, utilizes the initial position of the vernier adjustment knob adjustment level tray of the bottom be arranged at level tray then, make the laser that energizer sends and the Surface Vertical to be measured of sample;
3. adjust laser instrument, specimen holder and beam angle measuring sensor relative altitude position in vertical direction, the central spot that makes laser, the central point that is placed in the sample on the specimen holder and beam angle measuring sensor that laser instrument sends is on same surface level;
4. the bottom with level tray is fixedly connected with universal stage, rotates the orientation that universal stage changes level tray then, suppose that the incident angle that laser that laser instrument at this moment sends incides the surface to be measured of sample is θ;
5. rotary beam measurement of angle element; Make its center over against diffracted beam, the angle
of the normal to a surface to be measured of diffracted beam and sample when the incident angle that the laser that the Laser Measurement device sends incides the surface to be measured of sample is θ
6. extrapolate the cycle size of sample according to the angle
of the normal to a surface to be measured of diffracted beam and sample.
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| CN201210168132.6A CN102706276B (en) | 2012-05-24 | 2012-05-24 | Planar periodic structure measurement device and measurement method |
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| CN201210168132.6A CN102706276B (en) | 2012-05-24 | 2012-05-24 | Planar periodic structure measurement device and measurement method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110132549A (en) * | 2019-05-20 | 2019-08-16 | 中国科学院福建物质结构研究所 | Grid stroke density measuring equipment and its measurement method |
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| US6429943B1 (en) * | 2000-03-29 | 2002-08-06 | Therma-Wave, Inc. | Critical dimension analysis with simultaneous multiple angle of incidence measurements |
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| CN102183212A (en) * | 2010-12-28 | 2011-09-14 | 睿励科学仪器（上海）有限公司 | Method and device for rapidly determining topography parameters of microperiodic structure |
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2012
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Patent Citations (4)
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| US5867276A (en) * | 1997-03-07 | 1999-02-02 | Bio-Rad Laboratories, Inc. | Method for broad wavelength scatterometry |
| US6429943B1 (en) * | 2000-03-29 | 2002-08-06 | Therma-Wave, Inc. | Critical dimension analysis with simultaneous multiple angle of incidence measurements |
| CN101206112A (en) * | 2007-12-20 | 2008-06-25 | 中国科学院长春光学精密机械与物理研究所 | Method for measuring nano-scale multilayer film structure |
| CN102183212A (en) * | 2010-12-28 | 2011-09-14 | 睿励科学仪器（上海）有限公司 | Method and device for rapidly determining topography parameters of microperiodic structure |
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| CN110132549A (en) * | 2019-05-20 | 2019-08-16 | 中国科学院福建物质结构研究所 | Grid stroke density measuring equipment and its measurement method |
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