CN102740591A - Double-sided aluminum base circuit board with super-high thermal conductivity and preparation method thereof - Google Patents
Double-sided aluminum base circuit board with super-high thermal conductivity and preparation method thereof Download PDFInfo
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- CN102740591A CN102740591A CN2012102351658A CN201210235165A CN102740591A CN 102740591 A CN102740591 A CN 102740591A CN 2012102351658 A CN2012102351658 A CN 2012102351658A CN 201210235165 A CN201210235165 A CN 201210235165A CN 102740591 A CN102740591 A CN 102740591A
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Abstract
The invention provides a double-sided aluminum base circuit board with super-high thermal conductivity and a preparation method of the circuit board. The double-sided aluminum base circuit board comprises an aluminum base plate material, an electrical conductive hole formed on the aluminum base plate material for communicating the upper side and the lower side of the aluminum base plate material, an aluminum oxide layer formed on the upper and the lower sides of the aluminum base plate material and on the wall of the electrical conductive hole by oxidation method for insulation and heat conduction, and a DLC (diamond-like carbon) coating and a Cu coating adhered on the aluminum oxide layer. The double-sided aluminum base circuit board provided by the invention is excellent in comprehensive heat conducting property, and the surface insulation heat-conducting layer is free of high polymer materials and is excellent in flame retardant property and aging resistance. In addition, the insulation layer on the surface of the circuit board and the insulation layer on the wall surface of the electrical conductive hole are an integrated insulation heat-conducting body with the same composition and an integrated structure, thereby obviating the hole filling and the chemical copper deposition method, simplifying the process and improving the yield.
Description
Technical field
The present invention relates to a kind of two-sided aluminum-based circuit board and preparation method thereof, belong to electronic technology field with super-high heat-conductive performance.
Background technology
Current two-sided aluminium base technology also just is in theory stage; Little real product successful Application that can realize two-sided aluminum-based circuit board processing technology, and theoretic two-sided aluminium base is because of the inreal purpose that realizes two-sided aluminium base design of heat conducting limitation.
The critical process of the two-sided aluminium base production of theoretic tradition is that consent is handled, thereby reaches the purpose of insulation.That is: PCB (Chinese is a printed circuit board, is the printed circuit board that the adopts electron printing to make) conductive hole that finished product requires needs once boring, insulating material filling perforation, secondary drilling on the filling perforation material at last.Present filling perforation material very easily produces defective, and the metal level the when short circuit that causes like the filling perforation cavity, thermal shock is peeled off etc., and complex process.
Though the two-sided aluminum-based circuit board capacity of heat transmission of tradition process for pressing production is superior to FR-4 copper-clad plate (in the epoxy resin copper-clad plate a kind of) slightly, because of the medium factor does not reach the semi-conductive encapsulation requirement of high-power heating yet.
Summary of the invention
The objective of the invention is to solve above-mentioned technical problem; A kind of two-sided aluminum-based circuit board with super-high heat-conductive performance is provided; Being applied in great power LED device or module etc. needs the field of super-high heat-conductive, when satisfying the electrical apparatus insulation requirement, improves the heat conduction and heat radiation ability of substrate.
The object of the invention is realized through following technical scheme:
The two-sided aluminum-based circuit board of a kind of super-high heat-conductive; Comprise conductive hole that aluminium base sheet material, being used for of on aluminium base sheet material, offering be connected said aluminium base sheet material upper and lower surface, and the alumina layer that is used for insulating heat-conductive handled through method for oxidation of said aluminium base sheet material upper and lower surface and said conductive hole hole wall and according to the order of sequence attached to the PVD composite coating on said alumina layer surface and the Cu coating that is used to make the conducting wire through the preparation of PVD method, said PVD composite coating comprises the DLC coating that is used for insulating heat-conductive through the preparation of PVD method at least.
Preferably, said PVD composite coating also comprises a Si coating, the 2nd Si coating that plays a transition role, and the coating structure of said PVD composite coating is in proper order: Si coating-DLC coating-the 2nd Si coating.
Preferably, in order to play transitional function, also be provided with one the 3rd tie coat between said PVD composite coating and the Cu coating.Said the 3rd tie coat can be in Ti coating or Cr coating or the Ni coating any one.
Preferably, the thickness of a said Si coating is 100nm-500nm; The thickness of said DLC coating is 0.5um-5um; The thickness of said the 2nd Si coating is 100nm-500nm; The thickness of said the 3rd tie coat is 100nm-500nm; The thickness of said circuit Cu coating is 5um.
Preferably, in order to reach the conduction or the requirement of other process aspects, the surface of said Cu coating also is provided with through what electro-plating method prepared and adds thick copper layer.
Preferably, said Cu coating is provided with anti-welding and solder mask protective effect, or/and the surface-treated layer that shields.When the two-sided aluminum-based circuit board of super-high heat-conductive comprises when adding thick copper layer, the said thick copper layer that adds is provided with anti-welding and solder mask protective effect, or/and the surface-treated layer that shields.
The present invention has also disclosed the preparation method of the two-sided aluminum-based circuit board of a kind of super-high heat-conductive, comprises the steps:
Step 1, aluminium base sheet material cleaning step cleans aluminium base sheet material with ultrasonic equipment, and oven dry;
Step 2, aluminium base sheet material boring step is cleaned the boring processing that the aluminium base sheet material of accomplishing carries out conductive hole to step 1;
Step 3, aluminium base sheet material oxidation step, the 40g/L-100g/L sodium hydroxide solution alkali of the aluminium base sheet material after the step 2 boring being put into 70 ℃ of temperature loses 1min-3min, neutralizes with 10% nitric acid again; Then aluminium base sheet material is put into temperature and carry out anodic oxidation 10 ℃-30 ℃ 10g/L-40g/L acid solution, said acid solution is the mixed solution of sulfuric acid and oxalic acid, and its mesoxalic acid solutes content is the 70%-100% of total soluble matters, and current density is 1A/dm
2-5A/dm
2, oxidation duration 30min-120min; Oxidation finishes the back with high-temperature water sealing of hole 10min-30min, obtains being formed on the alumina layer of aluminium base plate surface and conductive hole hole wall surface;
Step 4, PVD composite coating deposition step comprises by the operation sequencing successively: PVD pre-treatment step, DLC deposition step, wherein:
The PVD pre-treatment step, the aluminium base sheet material that will pass through after the step 3 oxidation is sandwiched in the vacuum film coating chamber, regulates vacuum degree and is higher than 5.0 * 10
-4Pa; To the indoor feeding purity of vacuum coating is 99.999% argon gas, flow 10-100sccm, and to keep the indoor technology vacuum degree of vacuum coating be 0.1-5Pa; Open the ion beam power supply; Use ion beam that the argon gas of introducing is carried out ionization and bombards said aluminium base sheet material, the voltage of ion beam is 1000-3000V, bombardment time 10-30 minute;
The DLC deposition step is 98% acetylene gas to the indoor feeding throughput of vacuum coating 300-500sccm, purity, and to keep the indoor technology vacuum degree of vacuum coating be 0.1-5Pa; Open the ion beam power supply, use ion beam that said aluminium base sheet material is carried out the plated film of DLC, voltage control is at 800-2000V; And open grid bias power supply simultaneously, and the frequency of rf bias is 13.56MHz, power is 50W-500W; Sedimentation time is 120-160 minute, and the thickness of the DLC coating that obtains is 0.5-5 μ m;
Preferably; Also comprising a Si deposition step that plays a transition role between said PVD pre-treatment step and the DLC deposition step, after said PVD pre-treatment step finishes, is 99.999% argon gas to the indoor feeding throughput of vacuum coating 50-70sccm, purity; And the indoor technology vacuum degree of maintenance vacuum coating is 0.1-5Pa; Open shielding power supply, using the non-balance magnetically controlled sputter negative electrode is 300-700V to carrying out the Si plated film through the pretreated aluminium base sheet material of PVD, applying direct voltage on the said non-balance magnetically controlled sputter negative electrode; Sedimentation time is 5-20 minute, and obtaining thickness is 100-500nm the one Si coating.
Further preferred; Also comprising the 2nd Si deposition step that plays a transition role after the said DLC deposition step, after said DLC deposition step finishes, is 99.999% argon gas to the indoor feeding throughput of vacuum coating 50-70sccm, purity; And the indoor technology vacuum degree of maintenance vacuum coating is 0.1-5Pa; Open shielding power supply, use the non-balance magnetically controlled sputter negative electrode that the aluminium base sheet material through said DLC coating deposition is carried out the Si plated film, applying direct voltage on the said non-balance magnetically controlled sputter negative electrode is 300-700V; Sedimentation time is 5-20 minute, and obtaining thickness is the 2nd Si coating of 100-500nm.
Preferably; Also comprise the 3rd tie coat deposition step between said DLC deposition step and the Cu deposition step; Said the 3rd tie coat is Ti coating or Cr coating or Ni coating, after said DLC deposition step finishes, is 99.999% argon gas to the indoor feeding throughput of vacuum coating 50-70sccm purity; And the indoor technology vacuum degree of maintenance vacuum coating is 0.1-5Pa; Open shielding power supply, use the non-balance magnetically controlled sputter negative electrode that the aluminium base sheet material through said DLC coating deposition is carried out Ti or Cr or Ni plated film, applying direct voltage on the said non-balance magnetically controlled sputter negative electrode is 300-500V; Sedimentation time is 5-20 minute, and the thickness that obtains Ti or Cr or Ni coating is 100-500nm.
Further preferred; When said PVD composite coating also comprises the Si coating that plays a transition role and the 2nd Si coating; Also comprise the 3rd tie coat deposition step between said the 2nd Si deposition step and the Cu deposition step, said the 3rd tie coat is Ti coating or Cr coating or Ni coating.After said the 2nd Si deposition step finishes; It to the indoor feeding throughput of vacuum coating 50-70sccm purity 99.999% argon gas; And the indoor technology vacuum degree of maintenance vacuum coating is 0.1-5Pa; Open shielding power supply, use the non-balance magnetically controlled sputter negative electrode that the aluminium base sheet material through said the 2nd Si coating deposition is carried out Ti or Cr or Ni plated film, applying direct voltage on the said non-balance magnetically controlled sputter negative electrode is 300-500V; Sedimentation time is 5-20 minute, and the thickness that obtains Ti or Cr or Ni coating is 100-500nm.
More autotelic preferred, said method also comprises step 6, and thickening copper coating plating step adopts electro-plating method to set up at the Cu coating surface and adds thick copper layer.
Beneficial effect of the present invention is mainly reflected in:
(1) aluminum-based circuit board surface insulation heat-conducting layer is mainly alumina layer and DLC coating, not pbz polymer material, fire resistance and ageing resistace excellence.
(2) the aluminum-based circuit board surface insulation layer is that contained material is identical, the insulating thermal conductor of structure one whole with the hole wall surface insulating barrier of conductive hole; Be different from existing PCB processing technology; Promptly do not need the method for filling perforation and electroless copper plating, technology is simpler, and rate of finished products is high.
(3) compare with the two-sided aluminum-based circuit board of traditional process for pressing production, the comprehensive heat conductivility of wiring board of the present invention is excellent, and the copper coating of same cross-sectional has higher current capacity, whole wiring board temperature even diffused.
Description of drawings
Fig. 1 is the PVD composite coating structure sketch map of the preferred embodiment of the present invention.
Fig. 2 is the structural representation of the two-sided aluminum-based circuit board of the preferred embodiment of the present invention.
Wherein:
| 11 | Aluminium |
12 | |
13 | The PVD |
| 14 | |
15 | Surface-treated |
16 | |
| 21 | Already oxidised aluminium |
22 | The one Si coating | 23 | The |
| 24 | The 2nd Si coating | 25 | The |
26 | The Cu coating |
Embodiment
Various coating technologies constantly develop, for industry manufacturing and daily life are brought many progress and facility.Rely on coating technology, can make product or parts obtain better surface property, thereby remedy some characteristic that material itself is not had.Diamond-like coating (Diamond-like Carbon), or abbreviation DLC coating is to contain diamond lattic structure (sp
3Key) and graphite-structure (sp
2Key) metastable amorphous substance.
In the coating technology, physical vapour deposition (PVD) is meant through processes such as evaporation, ionization or sputters, produces metallic and is deposited on surface of the work with reacting gas reaction formation compound, is called for short PVD.PVD coating technique commonly used at present mainly is divided three classes, and is vacuum evaporation coating membrane technology, vacuum sputtering coating technology and vacuum ionic bundle coating technique.Wherein, the vacuum magnetic-control sputtering coating technique is to make during with the high-energy particle bombardment surface of solids particle of the surface of solids obtain energy and the surface of overflowing, and is deposited on the substrate.Vacuum ionic bundle coating technique is meant that the gas that under vacuum environment, is introduced into is ionized under the electromagnetic field acting in conjunction of ion beam; Ionizable ion is accelerated under the electric field action between ion beam and the substrate, and with the bombardment of the form of high energy particle or be deposited on the substrate; The gas that is introduced into possibly be Ar, H according to the needs of technology
2Or C
2H
2Deng, thereby accomplish technologies such as ion etching cleaning and ion beam depositing.But for the selection of different-energy and different preparation technologies, prepared product just can obtain different performances.
As shown in Figure 2; The present invention has disclosed the two-sided aluminum-based circuit board of a kind of preferred super-high heat-conductive, the conductive hole 16 that comprises aluminium base sheet material 11, aluminium base sheet material 11 upper and lower surfaces is connected in being used for of offering on the aluminium base sheet material 11, and the alumina layer that is used for insulating heat-conductive 12 handled through method for oxidation of aluminium base sheet material 11 upper and lower surfaces and conductive hole 16 hole walls and attached to the PVD composite coating 13 on said alumina layer 12 surfaces, also have the 3rd tie coat 25 and Cu coating 26 on the PVD composite coating 13.
As shown in Figure 1, the PVD composite coating 13 that overlays on already oxidised aluminium base sheet material 21 surfaces comprises the DLC coating 23 that is used for insulating heat-conductive through PVD method plated film at least.
Certainly, in order to reach the better transitional effect, PVD composite coating 13 can also comprise a Si coating 22, the 2nd Si coating 24, and the coating structure of the PVD composite coating of present embodiment is in proper order: Si coating-DLC coating-the 2nd Si coating.
Be provided with on the surface of PVD composite coating 13 of the present invention the 3rd tie coat 25 that plays a transition role, the Cu coating 26 that has reached electric action and or thickening Cu layer (not shown); Any one of the 3rd tie coat 25 general employing Ti of present embodiment or Cr or Ni coating, its coating structure is in proper order: Ti or Cr or Ni coating-Cu coating-thickening Cu layer; Or Ti or Cr or Ni coating-Cu coating.
Introduce the preparation method of metal base circuit board of the present invention below in detail:
Step 1, aluminium base sheet material cleans, and cleans aluminium base sheet material 11 with ultrasonic equipment, and oven dry;
Step 2 is bored conductive hole 16, according to the requirement of product design, step 1 is cleaned the aluminium base sheet material drill hole reason of accomplishing;
Step 3, anodic oxidation aluminium base material, the 40g/L-100g/L sodium hydroxide solution alkali of the aluminium base sheet material 11 after the step 2 boring being put into 70 ℃ of temperature loses 1min-3min, neutralizes with 10% nitric acid again; Then aluminium base sheet material 11 is put into temperature and carry out anodic oxidation 10 ℃-30 ℃ 10g/L-40g/L acid solution, said acid solution is the mixed solution of sulfuric acid and oxalic acid, and its mesoxalic acid solutes content is the 70%-100% of total soluble matters, and current density is 1A/dm
2-5A/dm
2, oxidation duration 30min-120min; Oxidation finishes the back and promptly obtains alumina layer 12 with high-temperature water sealing of hole 10min-30min; Certainly, alumina layer 12 also can adopt differential arc oxidization technique to grow up to, and the thickness of alumina layer 12 is generally 14-60 μ m.
Step 4; The deposition step of PVD composite coating comprises PVD pre-treatment step and DLC deposition step, in order to improve the adhesion between the adjacent two layers; PVD composite coating deposition step can also comprise like a Si coating and the 2nd Si deposition step, be specially:
⑴ PVD pre-treatment step, the aluminium base sheet material 11 that will pass through after the step 3 oxidation is sandwiched in the vacuum film coating chamber, regulates vacuum degree and is higher than 5.0 * 10
-4Pa; To the indoor feeding purity of vacuum coating is 99.999% argon gas, flow 10-100sccm, and to keep the indoor technology vacuum degree of vacuum coating be 0.1-5Pa; Open the ion beam power supply; Use ion beam that the argon gas of introducing is carried out ionization and bombards aluminium base sheet material 11, the voltage of ion beam is 1000-3000V, bombardment time 10-30 minute;
⑵ the one Si coating deposition; After said PVD pre-treatment step finishes; To the indoor feeding throughput of vacuum coating 50-70sccm, purity is 99.999% argon gas, and to keep the indoor technology vacuum degree of vacuum coating be 0.1-5Pa, opens to have Si target shielding power supply; Use the non-balance magnetically controlled sputter negative electrode to carrying out the Si plated film through the pretreated aluminium base sheet material 11 of PVD; Applying direct voltage on the said non-balance magnetically controlled sputter negative electrode is 300-700V, and sedimentation time is 5-20 minute, and the thickness of a Si coating 22 is 100-500nm;
⑶ DLC coating deposition is 98% acetylene gas to the indoor feeding throughput of vacuum coating 300-500sccm, purity, and to keep the indoor technology vacuum degree of vacuum coating be 0.1-5Pa, opens the ion beam power supply; The aluminium base sheet material 11 that uses ion beam that the said Si coating of process is deposited carries out the plated film of DLC, opens the ion beam power supply, and voltage control is at 800-2000V; And open grid bias power supply simultaneously, and the frequency of rf bias is 13.56MHz, power is 50-500W; Sedimentation time is 120-160 minute, and the thickness of DLC coating 23 is 0.5-5 μ m, and these DLC coating 23 conductive coefficients are 800-2000W/mK; Surmounted existing insulating material, even silver and copper, the important function of DLC coating 23 is horizontal heat conduction; Make the heat rapid diffusion, whole wiring board temperature is even, is particularly suitable for the heat radiation of semiconductor point thermal source;
⑷ the 2nd Si coating deposition; After said DLC deposition step finishes; To the indoor feeding throughput of vacuum coating 50-70sccm, purity is 99.999% argon gas, uses the non-balance magnetically controlled sputter negative electrode that the aluminium base sheet material through said DLC coating deposition is carried out the Si plated film, and applying direct voltage on the said non-balance magnetically controlled sputter negative electrode is 300-700V; Sedimentation time is promptly to get the 2nd Si coating 24 in 5-20 minute, and its thickness is 100-500nm.
⑴ Ti or Cr or Ni coating deposition; After said the 2nd Si deposition step finishes; To the argon gas of the indoor feeding throughput of vacuum coating 50-70sccm, and to keep the indoor technology vacuum degree of vacuum coating be 0.1-5Pa, opens Ti or Cr or Ni target shielding power supply; Use the non-balance magnetically controlled sputter negative electrode that the aluminium base sheet material through said the 2nd Si coating deposition is carried out Ti or Cr or Ni plated film; Applying direct voltage on the said non-balance magnetically controlled sputter negative electrode is 300-500V, and sedimentation time is promptly to get Ti or Cr or Ni coating 25 in 5-20 minute, and its thickness is 100-500nm;
⑵ Cu coating deposition; It to the indoor feeding throughput of vacuum coating 50-70sccm, purity 99.999% argon gas; And the indoor technology vacuum degree of maintenance vacuum coating is 0.1-5Pa; Unlatching has copper target sputter cathode power supply, uses the non-balance magnetically controlled sputter negative electrode that the aluminium base sheet material through said Ti or Cr or Ni coating deposition is carried out the Cu plated film, and applying direct voltage on the said non-balance magnetically controlled sputter negative electrode is 300-500V; Obtained Cu coating 26 in sedimentation time 20-40 minute, the thickness of Cu coating 26 is 5 μ m.
Step 6, thickening copper coating plating step can be set up thickening copper by the Cu coating surface in metal coating according to conduction or other arts demands, and thickening copper can adopt traditional electro-plating method to obtain.
After thickening copper was electroplated and accomplished, because natural copper tends to exist with the form of oxide in air, therefore the unlikely native copper that remains for a long time need carry out other processing to copper.At the process circuit etching; Seal resistance weldering forms solder mask 14; After the lettering symbol, carry out surface treatment on Cu coating or thickening copper coating surface and form surface-treated layer 15, guarantee good solderability or electrically, be shaped to final products at last with protective effect; Because technology is identical with common double panel technology, repeats no more at this.
In the said method, when not having the Si coating of its transitional function, can directly deposit the 3rd tie coat deposition, deposit the Cu coating then on the surface of DLC coating.Certainly,, also can save the 3rd tie coat deposition step, promptly directly deposit the Cu coating on the surface of DLC coating for the selection of other technological requirements.
The above person of thought; Be merely the present invention's preferred embodiment; When the scope that can not limit the present invention's enforcement with this, promptly change and modification according to claim of the present invention and the simple equivalent done of invention description generally, all still belong in the scope that patent of the present invention contains.
Claims (13)
1. two-sided aluminum-based circuit board of super-high heat-conductive; It is characterized in that: comprise conductive hole (16) that aluminium base sheet material (11), being used for of on aluminium base sheet material (11), offering be connected said aluminium base sheet material (11) upper and lower surface, and the alumina layer that is used for insulating heat-conductive (12) handled through method for oxidation of said aluminium base sheet material (11) upper and lower surface and said conductive hole (16) hole wall and according to the order of sequence attached to the PVD composite coating (13) on said alumina layer (12) surface and the Cu coating (26) that is used to make the conducting wire through the preparation of PVD method, said PVD composite coating (13) comprises the DLC coating (23) that is used for insulating heat-conductive through the preparation of PVD method at least.
2. the two-sided aluminum-based circuit board of super-high heat-conductive according to claim 1; It is characterized in that: said PVD composite coating (13) also comprises a Si coating (22), the 2nd Si coating (24) that plays a transition role, and the coating structure of said PVD composite coating is in proper order: a Si coating (22)-DLC coating (23)-the 2nd Si coating (24).
3. the two-sided aluminum-based circuit board of any one super-high heat-conductive according to claim 1 and 2 is characterized in that: also be provided with the 3rd tie coat (25) that plays a transition role between said PVD composite coating (13) and the Cu coating (26).
4. the two-sided aluminum-based circuit board of super-high heat-conductive according to claim 3 is characterized in that: said the 3rd tie coat (25) is Ti coating or Cr coating or Ni coating.
5. the two-sided aluminum-based circuit board of super-high heat-conductive according to claim 4 is characterized in that: the thickness of a said Si coating (22) is 100nm-500nm; The thickness of said DLC coating (23) is 0.5um-5um; The thickness of said the 2nd Si coating (24) is 100nm-500nm; The thickness of said the 3rd tie coat (25) is 100nm-500nm; The thickness of said circuit Cu coating (26) is 5um.
6. the two-sided aluminum-based circuit board of super-high heat-conductive according to claim 1 is characterized in that: the surface of said Cu coating (26) also is provided with through what electro-plating method prepared and adds thick copper layer.
7. according to claim 1 or the two-sided aluminum-based circuit board of 6 described any one super-high heat-conductives; It is characterized in that: said Cu coating (26) or add thick copper layer and be provided with anti-welding and solder mask (14) protective effect, or/and the surface-treated layer (15) that shields.
8. the preparation method of the two-sided aluminum-based circuit board of super-high heat-conductive is characterized in that: comprises the steps,
Step 1, aluminium base sheet material cleaning step cleans aluminium base sheet material (11) with ultrasonic equipment, and oven dry;
Step 2, aluminium base sheet material boring step is cleaned the boring processing that the aluminium base sheet material of accomplishing (11) carries out conductive hole (16) to step 1;
Step 3, aluminium base sheet material oxidation step, the 40g/L-100g/L sodium hydroxide solution alkali of the aluminium base sheet material (11) after the step 2 boring being put into 70 ℃ of temperature loses 1min-3min, neutralizes with 10% nitric acid again; Then aluminium base sheet material (11) is put into temperature and carry out anodic oxidation 10 ℃-30 ℃ 10g/L-40g/L acid solution, said acid solution is the mixed solution of sulfuric acid and oxalic acid, and its mesoxalic acid solutes content is the 70%-100% of total soluble matters, and current density is 1A/dm
2-5A/dm
2, oxidation duration 30min-120min; Oxidation finishes the back with high-temperature water sealing of hole 10min-30min, obtains being formed on the alumina layer (12) of aluminium base sheet material (11) surface and conductive hole (16) hole wall surface;
Step 4, PVD composite coating deposition step comprises by the operation sequencing successively: PVD pre-treatment step, DLC deposition step, wherein:
The PVD pre-treatment step, the aluminium base sheet material (11) that will pass through after the step 3 oxidation is sandwiched in the vacuum film coating chamber, regulates vacuum degree and is higher than 5.0 * 10
-4Pa; To the indoor feeding purity of vacuum coating is 99.999% argon gas, flow 10-100sccm, and to keep the indoor technology vacuum degree of vacuum coating be 0.1-5Pa; Open the ion beam power supply; Use ion beam that the argon gas of introducing is carried out ionization and bombards said aluminium base sheet material (11), the voltage of ion beam is 1000-3000V, bombardment time 10-30 minute;
The DLC deposition step is 98% acetylene gas to the indoor feeding throughput of vacuum coating 300-500sccm, purity, and to keep the indoor technology vacuum degree of vacuum coating be 0.1-5Pa; Open the ion beam power supply; Use ion beam that said aluminium base sheet material (11) is carried out the plated film of DLC, voltage control is at 800-2000V, and opens grid bias power supply simultaneously; The frequency of rf bias is 13.56MHz; Power is 50W-500W, and sedimentation time is 120-160 minute, and the thickness of the DLC coating (23) that obtains is 0.5-5 μ m;
Step 5, the Cu deposition step is 99.999% argon gas to the indoor feeding throughput of vacuum coating 50-70sccm, purity; And the indoor technology vacuum degree of maintenance vacuum coating is 0.1-5Pa; Open shielding power supply, use the non-balance magnetically controlled sputter negative electrode that said aluminium base sheet material (11) is carried out the Cu plated film, applying direct voltage on the said non-balance magnetically controlled sputter negative electrode is 300-500V; Sedimentation time is 20-40 minute, and Cu coating (26) thickness that obtains is 5 μ m.
9. the preparation method of the two-sided aluminum-based circuit board of super-high heat-conductive according to claim 8 is characterized in that: also comprise a Si deposition step that plays a transition role between said PVD pre-treatment step and the DLC deposition step,
After said PVD pre-treatment step finishes; To the indoor feeding throughput of vacuum coating 50-70sccm, purity is 99.999% argon gas, and to keep the indoor technology vacuum degree of vacuum coating be 0.1-5Pa, opens shielding power supply; Use the non-balance magnetically controlled sputter negative electrode to carrying out the Si plated film through the pretreated aluminium base sheet material of PVD (11); Applying direct voltage on the said non-balance magnetically controlled sputter negative electrode is 300-700V, and sedimentation time is 5-20 minute, and obtaining thickness is 100-500nm the one Si coating (22).
10. the preparation method of the two-sided aluminum-based circuit board of super-high heat-conductive according to claim 8; It is characterized in that: also comprise the 2nd Si deposition step that plays a transition role after the said DLC deposition step; After said DLC deposition step finishes; To the indoor feeding throughput of vacuum coating 50-70sccm, purity is 99.999% argon gas, and to keep the indoor technology vacuum degree of vacuum coating be 0.1-5Pa, opens shielding power supply; Use the non-balance magnetically controlled sputter negative electrode that the aluminium base sheet material (11) through said DLC coating deposition is carried out the Si plated film; Applying direct voltage on the said non-balance magnetically controlled sputter negative electrode is 300-700V, and sedimentation time is 5-20 minute, and obtaining thickness is the 2nd Si coating (24) of 100-500nm.
11. the preparation method of the two-sided aluminum-based circuit board of super-high heat-conductive according to claim 8; It is characterized in that: also comprise the 3rd tie coat deposition step between said DLC deposition step and the Cu deposition step; Said the 3rd tie coat (25) is Ti coating or Cr coating or Ni coating, after said DLC deposition step finishes, is 99.999% argon gas to the indoor feeding throughput of vacuum coating 50-70sccm purity; And the indoor technology vacuum degree of maintenance vacuum coating is 0.1-5Pa; Open shielding power supply, use the non-balance magnetically controlled sputter negative electrode that the aluminium base sheet material (11) through said DLC coating deposition is carried out Ti or Cr or Ni plated film, applying direct voltage on the said non-balance magnetically controlled sputter negative electrode is 300-500V; Sedimentation time is 5-20 minute, and the thickness that obtains Ti or Cr or Ni coating is 100-500nm.
12. the preparation method of the two-sided aluminum-based circuit board of super-high heat-conductive according to claim 10; It is characterized in that: also comprise the 3rd tie coat deposition step between said the 2nd Si deposition step and the Cu deposition step; Said the 3rd tie coat (25) is Ti coating or Cr coating or Ni coating; After said the 2nd Si deposition step finishes; To the indoor feeding throughput of vacuum coating 50-70sccm purity is 99.999% argon gas, and to keep the indoor technology vacuum degree of vacuum coating be 0.1-5Pa, opens shielding power supply; Use the non-balance magnetically controlled sputter negative electrode that the aluminium base sheet material (11) through said the 2nd Si coating deposition is carried out Ti or Cr or Ni plated film; Applying direct voltage on the said non-balance magnetically controlled sputter negative electrode is 300-500V, and sedimentation time is 5-20 minute, and the thickness that obtains Ti or Cr or Ni coating is 100-500nm.
13. the preparation method of the two-sided aluminum-based circuit board of super-high heat-conductive according to claim 8 is characterized in that: also comprise step 6, thickening copper coating plating step adopts electro-plating method to set up on Cu coating (26) surface and adds thick copper layer.
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| CN104113979A (en) * | 2014-02-13 | 2014-10-22 | 美的集团股份有限公司 | Aluminum-based circuit board and preparation method thereof, and full packaging electronic component |
| CN106879167A (en) * | 2017-04-06 | 2017-06-20 | 昆山苏杭电路板有限公司 | Double-face aluminium substrate of the embedded super-high heat-conductive ceramic block of high precision and preparation method thereof |
| CN107072038A (en) * | 2017-03-23 | 2017-08-18 | 深圳亚信昌科技有限公司 | Double-side aluminum circuit board and preparation method thereof |
| CN109137035A (en) * | 2018-08-29 | 2019-01-04 | 谢新林 | A kind of preparation method of aluminum-based copper-clad plate |
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Application publication date: 20121017 |