CN102800910A - Sub-wavelength electromagnetic diode - Google Patents
Sub-wavelength electromagnetic diode Download PDFInfo
- Publication number
- CN102800910A CN102800910A CN2011101346709A CN201110134670A CN102800910A CN 102800910 A CN102800910 A CN 102800910A CN 2011101346709 A CN2011101346709 A CN 2011101346709A CN 201110134670 A CN201110134670 A CN 201110134670A CN 102800910 A CN102800910 A CN 102800910A
- Authority
- CN
- China
- Prior art keywords
- sub
- wavelength
- diode
- electromagnetism
- asymmetric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention discloses a sub-wavelength electromagnetic diode implemented on the basis of coupling resonance transmission. The sub-wavelength electromagnetic diode consists of three or more metal resonant units in asymmetric cascade connection, nonlinear response parts among part of the metal resonant units, and near-field feed-in and feed-out structures, wherein a plurality of metal resonant units are in cascade connection with one another in sequence, and the nonlinear response parts are required to be introduced among part of the metal resonant units; and the specific asymmetric introduction in the asymmetric cascade connection of the metal resonant units can be asymmetry caused by the nonlinear introduction in a symmetric cascade connection structure, or the asymmetry of a cascade connection structure. The sub-wavelength size of the electromagnetic diode is beneficial for miniaturization of integrated photon loops; low-power operation can be realized by using local field enhanced strong nonlinearity; two-frequency operation can be realized; and the sub-wavelength electromagnetic diode can be directly used as a component of an on-chip integrated photon loop.
Description
Technical field
The present invention relates to a kind of non-linear regulation and control coupled resonance transmission device, relate in particular to a kind of sub-wavelength electromagnetism diode component.
Background technology
The electromagnetism diode is a kind of device of realizing the unidirectional conducting of electromagnetic wave, is one of basic device of structure electromagnetism logical circuit.All have broad application prospects in fields such as communication and full photometry calculations.At present both at home and abroad relevant research mainly concentrates on several aspects: be utilized in and introduce non-linearly in the photonic crystal, utilize the band edge of non-linear modulation to move and realize diode [document 1-2, M.Scalora; J.P.Dowling; C.M.Bowden, and M.J.Bloemer, " The photonic band edge optical diode; " Journal of Applied Physics 76,2023-2023 (1994); M.D.Tocci, M.J.Bloemer, M.Scalora; J.P.Dowling, and C.M.Bowden, " Thin-film nonlinear optical diode; " Applied Physics Letters 66,2324-2324 (1995)], the generation of second harmonic realizes diode effect [document 3-4 in the regulation and control non-linear photon crystal; K.Gallo, and G.Assanto, " All-optical diode based on second-harmonic generaion in an asymmetric waveguide; " J.Opt.Soc.Am.B 16,267-269 (1999); K.Gallo, G.Assanto, K.R.Parameswaran; And M.M.Fejer, " All-optical diode in a periodically poled lithium niobate waveguide, " Applied Physics Letters 79; 314-314 (2001)], the bistable state in the regulation and control non-linear photon crystal realizes diode effect [document 5-7, M.W.Feise; I.V.Shadrivov, and Y.S.Kivshar, " Bistable diode action in left-handed periodic structures; " Physical Review E 71,037602 (2005); C.Xue, H.Jiang, and H.Chen, " Highly efficient all-optical diode action based on light-tunneling heterostructures, " Opt.Express 18,7479-7487 (2010); I.V.Shadrivov, K.Y.Bliokh, Y.P.Bliokh, V.Freilikher; And Y.S.Kivshar, " Bistability of Anderson Localized States in Nonlinear Random Media, " Physical Review Letters 104; 123902 (2010)], utilize the non-linear absorption of medium to realize diode [document 8, R.Philip; M.Anija, C.S.Yelleswarapu, and D.V.G.L.N.Rao; " Passive all-optical diode using asymmetric nonlinear absorption, " Applied Physics Letters 91,141118-141113 (2007)]; Utilize non-linear optical waveguide to realize diode response [document 9-10, Z.Yu, and S.Fan; " Complete optical isolation created by indirect interband photonic transitions, " Nat Photon 3,91-94 (2009); Z.Yu; And S.Fan; " Optical isolation based on nonreciprocal phase shift induced by interband photonic transitions, " Applied Physics Letters 94,171116-171113 (2009)].More than existing design physically all based on the non-linear phenomena of Bragg diffraction or macroscopic view, mostly the physical dimension of design is several or a lot of wavelength, is applied to integrated electromagnetic circuit the miniaturization of electromagnetic circuit is had the relevant basic restriction of wavelength.
Summary of the invention
It is bigger that the present invention solves existing diode component volume, for the conditional problem of the application of integrated circuit, discloses a kind of mentality of designing and realization means that realize sub-wavelength electromagnetism diode based on the coupled resonance transmission.This sub-wavelength electromagnetism diode is made up of the parts that have nonlinear response between the metal resonant element of the asymmetric cascade more than three or three and the center subdivision; Metal resonant element asymmetric is cascaded as key technical feature of the present invention, concrete asymmetrical introducing can for: what non-linear introducing caused in the symmetrical cascade structure is asymmetric, or cascade structure itself is asymmetric.This sub-wavelength electromagnetism diode component utilize CGCM between the sub-wavelength resonant element with the electromagnetic field local among very little gap, and interact through the strong nonlinearity of local fields of amplifying and the nonlinear response parts that are placed in one among the unsymmetric structure regulation and control gap and to realize.The sub-wavelength dimensions of this electromagnetism diode design is of value to the miniaturization in integrated photon loop; The strong nonlinearity that utilizes local fields to strengthen can be realized low-power operation; Can realize two-frequency operation; And can be directly as integrated photon on chip loop element.
The present invention utilizes the coupled resonance pattern between the metal resonant element of asymmetric cascade to realize sub-wavelength electromagnetism diode: in order to reach the appeal purpose; The present invention adopts the parts that have nonlinear response between sub-wavelength metal resonant element and the center subdivision of the asymmetric cascade more than three or three, and (in microwave is non-linear lamped element such as variable capacitance diode; Can be various nonlinear dielectrics in high frequency more) constitute; Feed-in and feed out and adopt suitable near field excitation and near field detection mode; Electromagnetism diode based on above design can be realized sub-wavelength dimensions, and the planar structure of employing makes it can be directly as integrated photon on chip loop element.
Concrete structure of the present invention is realized: comprises the metal resonant element of the asymmetric cascade more than three or three, has the parts of nonlinear response between the subdivision of center, and suitable near field feed-in and feed out structure.The metal resonant element is made by the surface printing technology of maturation; Component units is that the metal resonant element can be various metal structures unit such as rectangle ring structure, annulus; Asymmetric arranging through shown in the accompanying drawing 1 realized the asymmetric cascade structure that the present invention requires; Coupled resonance pattern between the metal resonant element of cascade is local and the electromagnetic field that amplifies in the adjacent segment well; Introduce the non-linear regulation and control of parts between the part unit to realize that the present invention requires with nonlinear response; Realize the asymmetrical non-linearity regulation and control in conjunction with asymmetric cascade structure, the metal unit of cascade has the size of sub-wavelength, adopts near field excitation and near field detection for the sign of the transport property of cascade metal resonant element chain.The coupled resonance pattern of utilizing that the present invention announces realizes the aufbauprinciple of sub-wavelength electromagnetism diode; Can be useful in microwave, Terahertz, also infrared or visible light wave range; Metal resonant element structure for the asymmetric cascade of microwave wavelength regions is realized by the printed circuit board (PCB) of maturation; The parts that have nonlinear response between the part unit can adopt non-linear lamped element such as variable capacitance diode; Can utilize processing such as electron beam exposure for Terahertz, the infrared metal resonant element that also designs asymmetric cascade with visible light or can utilize the metallic particles of chemical method growth to realize that the parts that have nonlinear response between the part unit can be various nonlinear dielectrics.
The present invention has following effect and advantage:
1. isolate with traditional optical that to utilize the Faraday medium to be aided with to differ from 45 ° of polarizers to realize different, this invention is for the requirement of the not polarization aspect of electromagnetic wave of transmission.
With based on photonic crystal and with the structure of macro non-linear phenomenon to relatively, the present invention can realize that the sub-wavelength device has much effect for the miniaturization in integrated photon loop.
3. sub-wavelength electromagnetism diode of the present invention can be realized two-frequency operation, sees Fig. 4.
4. the present invention adopts the planar structure design, and can directly be integrated in integrated photon on chip loop is an advantage of the present invention.
Description of drawings
Fig. 1 is the structural representation of sub-wavelength electromagnetism diode component of the present invention;
Fig. 2 is that the dB of sub-wavelength electromagnetism diode component of the present invention demarcates the transmission difference;
Fig. 3 is the operating efficiency (transmission contrast by list of references 4 definition) of example 1 under 3.52GHz and 3.75 operating frequency different capacities of sub-wavelength electromagnetism diode component of the present invention.
Embodiment
Embodiment 1
See also accompanying drawing 1, accompanying drawing 2 and accompanying drawing 3.
The sub-wavelength electromagnetism diode that the present invention relates to; Parts by having nonlinear response between the metal resonant element of asymmetric cascade and the part unit constitute; We are given in the design and the experimental result of three resonant elements of microwave band; The parts that nonlinear response is wherein arranged between two resonant elements: metal resonant element 1, metal resonant element 2, and metal resonant element 3 paster circuit and metal resonant element 1 and metal resonant element 2 between non-linear components 4 (being variable capacitance diode here) and near field feed probe 5,6 formations, see accompanying drawing 1.Metal resonant element 1 and 2 is 2.5mm * 15.5mm particularly, and metal resonant element 3 is 10.5 * 9.5mm, metal resonant element 1 and 2 spacing 0.8mm, and metal resonant element 2 and 3 spacing 0.5mm metal line-width are 0.5mm.
This instance principle provides the design based on three resonant rings, satisfies the requirement of the asymmetric cascade of sub-wavelength electromagnetism diode requirement, and is relatively simple for structure, carried out the principle demonstration for the performance of sub-wavelength electromagnetism diode.A plurality of resonant element cascades also can constitute asymmetrical result, have more adjustable parameters, for the operating efficiency of regulating and control the electromagnetism diode more freedom degree are arranged.The planar microstrip structure that adopts at the microwave band instance and Terahertz, Design Mechanism infrared and visible light wave range are identical, along with development of technology is that the wave band planar microstrip structure has got more and more and is applied to its all band [document 11, M.Schnell; P.Alonso Gonzalez, L.Arzubiaga, F.Casanova; L.E.Hueso; A.Chuvilin, and R.Hillenbrand, " Nanofocusing of mid-infrared energy with tapered transmission lines; " Nat Photon 5,283-287 (2011)].
Near field probes among the present invention adopts microstrip feed-in and reception; Test reverse (right side feed) transmission and forward (left side feed) transmission dB demarcate difference under the different input power; Be shown in the accompanying drawing 2,, frequency optimum traffic arranged when result's contrast can be seen 17.9dBm under 17.9dBm and the 19.6dBm power at 16.0dBm; Frequency optimum traffic is 3.52GHz and 3.75GHz, is respectively reverse electromagnetism diode (only right side feed conducting) and forward electromagnetism diode (only left side feed conducting).The operating efficiency of electromagnetism diode when accompanying drawing 3 is given in 3.52GHz (reverse electromagnetism diode operation frequency) and 3.75GHz (forward electromagnetism diode operation frequency) operating frequency different input power (the transmission contrast is by list of references 4 definition).
Claims (5)
1. sub-wavelength electromagnetism diode; Realize sub-wavelength electromagnetism diode based on the coupled resonance transmission, it is characterized in that: said sub-wavelength electromagnetism diode is by the metal resonant element more than three or three of asymmetric cascade and wherein have the parts and the near field feed-in of nonlinear response between the part metals resonant element and feed out structure and constitute; The cascade successively of a plurality of metal resonant elements needs to introduce the parts with nonlinear response between the part unit; In the asymmetric cascade of metal resonant element concrete asymmetrical introducing can for non-linear introducing in the symmetrical cascade structure cause asymmetric, perhaps cascade structure itself is asymmetric.
2. sub-wavelength electromagnetism diode according to claim 1 is characterized in that: said metal resonant element is Fang Huan, annulus or other various metal structures unit.
3. sub-wavelength electromagnetism diode according to claim 1 is characterized in that: utilize the coupled resonance pattern between the metal resonant element of said asymmetric cascade; The coupled resonance pattern of metal unit is local and the electromagnetic field that amplifies in the adjacent segment well; Parts through between the adjacent metal unit, introducing nonlinear response are realized the non-linear regulation and control to transporting, and realize asymmetrical non-linearity regulation and control, i.e. electromagnetism diode in conjunction with asymmetric cascade.
4. sub-wavelength electromagnetism diode according to claim 1 is characterized in that: the sign for the transport property of cascade metal resonant element chain adopts near field excitation and near field detection; The metal unit of asymmetric cascade has the size of sub-wavelength.
5. sub-wavelength electromagnetism diode according to claim 1; It is characterized in that: the aufbauprinciple of said sub-wavelength electromagnetism diode goes at microwave, Terahertz, also infrared or visible light wave range; Metal resonant element structure for the asymmetric cascade of microwave wavelength regions is realized by the printed circuit board (PCB) of maturation; The parts that have nonlinear response between the part unit can adopt non-linear lamped element such as variable capacitance diode; Can utilize processing such as electron beam exposure for Terahertz, the infrared metal resonant element that also designs asymmetric cascade with visible light or can utilize the metallic particles of chemical method growth to realize that the parts that have nonlinear response between the part unit can be various nonlinear dielectrics.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101346709A CN102800910A (en) | 2011-05-24 | 2011-05-24 | Sub-wavelength electromagnetic diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101346709A CN102800910A (en) | 2011-05-24 | 2011-05-24 | Sub-wavelength electromagnetic diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102800910A true CN102800910A (en) | 2012-11-28 |
Family
ID=47199939
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011101346709A Pending CN102800910A (en) | 2011-05-24 | 2011-05-24 | Sub-wavelength electromagnetic diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102800910A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4864259A (en) * | 1987-11-27 | 1989-09-05 | Ngk Spark Plug Co., Ltd. | Ladder-type electric filter circuit apparatus |
| US6812902B2 (en) * | 2002-05-13 | 2004-11-02 | Centurion Wireless Technologies, Inc. | Low profile two-antenna assembly having a ring antenna and a concentrically-located monopole antenna |
| CN101217062A (en) * | 2007-12-29 | 2008-07-09 | 清华大学 | A metal film and its making method |
-
2011
- 2011-05-24 CN CN2011101346709A patent/CN102800910A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4864259A (en) * | 1987-11-27 | 1989-09-05 | Ngk Spark Plug Co., Ltd. | Ladder-type electric filter circuit apparatus |
| US6812902B2 (en) * | 2002-05-13 | 2004-11-02 | Centurion Wireless Technologies, Inc. | Low profile two-antenna assembly having a ring antenna and a concentrically-located monopole antenna |
| CN101217062A (en) * | 2007-12-29 | 2008-07-09 | 清华大学 | A metal film and its making method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Sharifi et al. | A new design procedure for all-optical photonic crystal logic gates and functions based on threshold logic | |
| Hu et al. | Picosecond and low-power all-optical switching based on an organic photonic-bandgap microcavity | |
| Zhang et al. | Active digital spoof plasmonics | |
| Yu et al. | Complete optical isolation created by indirect interband photonic transitions | |
| Ishizaka et al. | Design of ultra compact all-optical XOR and AND logic gates with low power consumption | |
| Ibrahim et al. | Photonic logic NOR gate based on two symmetric microring resonators | |
| Park et al. | Near-infrared coherent perfect absorption in plasmonic metal-insulator-metal waveguide | |
| Chhipa et al. | Realization of all-optical logic gates using a single design of 2D photonic band gap structure by square ring resonator | |
| Lin et al. | Enhancement of unidirectional transmission through the coupling of nonlinear photonic crystal defects | |
| Gingras et al. | Direct temporal shaping of terahertz light pulses | |
| Grigoriev et al. | Bistability and stationary gap solitons in quasiperiodic photonic crystals based on Thue–Morse sequence | |
| Granpayeh et al. | Photonic crystal directional coupler for all-optical switching, tunable multi/demultiplexing and beam splitting applications | |
| Rahmati et al. | Design and simulation of a switch based on nonlinear directional coupler | |
| Liu et al. | Chip-integrated all-optical 4-bit Gray code generation based on silicon microring resonators | |
| Liu et al. | Aluminum nitride photonic integrated circuits: from piezo-optomechanics to nonlinear optics | |
| Rebhi et al. | A new design of a photonic crystal ring resonator based on Kerr effect for all-optical logic gates | |
| Lee et al. | Parametric oscillation of electromagnetic waves in momentum band gaps of a spatiotemporal crystal | |
| Paul et al. | Frozen mode in coupled silicon ridge waveguides for optical true time delay applications | |
| Charles et al. | Enhanced all-optical Y-shaped plasmonic OR, NOR and NAND gate models, analyses, and simulation for high speed computations | |
| Gao et al. | Non-spin-mixing defect modes in the split-ring dielectric photonic crystals | |
| Wood et al. | 7 nm/V DC tunability and millivolt scale switching in silicon carrier injection degenerate band edge resonators | |
| Jin et al. | Resonance-forbidden second-harmonic generation in nonlinear photonic crystals | |
| Ma et al. | Active quasi-BIC metasurfaces assisted by epsilon-near-zero materials | |
| Zhao et al. | Reconfigurable hybrid metamaterial waveguide system at terahertz regime | |
| Li et al. | Broad-band, reversible nonreciprocal light transmission based on a single nanocavity |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20121128 |