CN103021897A - Method for detecting semiconductor device electrical property failure - Google Patents
Method for detecting semiconductor device electrical property failure Download PDFInfo
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- CN103021897A CN103021897A CN2012104518716A CN201210451871A CN103021897A CN 103021897 A CN103021897 A CN 103021897A CN 2012104518716 A CN2012104518716 A CN 2012104518716A CN 201210451871 A CN201210451871 A CN 201210451871A CN 103021897 A CN103021897 A CN 103021897A
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Abstract
The invention discloses a method for detecting a semiconductor device electrical property failure. The method for detecting the semiconductor device electrical property failure comprises the following steps of: S1, collecting the gray scale: a. taking the minimum region which can be scanned by an electron beam defect scanner as a scanning unit region, setting as a defect through a program form and detecting the defect, and shooting an electron microscope atlas; and b. taking a semiconductor device as a scanning object, scanning under different conditions, and analyzing the gray scale; S2, screening scanning conditions, and testing the electrical property of the scanning conditions; acquiring a similarity numerical value; and defining the optimal scanning condition; S3, carrying out fixed point gray scale analysis so as to obtain a gray scale data collecting interval with an effective electrical property; and S4, forecasting an electrical property failure region. According to the invention, the gray scale collected data obtained by the electron beam defect scanner and the electrical property testing data are compared, the electrical property failure region and an electrical property effective region can be forecast effectively, which provides a basis for monitoring the advantages and disadvantages of an ion implantation technology, provides a technical support for to-be-adopted improving measures, and provides a powerful guarantee for shortening the research cycle of the semiconductor device.
Description
Technical field
The present invention relates to technical field of semiconductor device, relate in particular to the detection method that a kind of semiconductor device electrically lost efficacy.
Background technology
Ion implantor is one of implantation equipment of most critical during semiconductor device is made, is a kind of by guiding Impurity injection semiconductor wafer, thereby changes the equipment of wafer conductivity.Wherein, the uniformity of the degree of depth of Impurity injection and density has all directly determined to inject the quality of wafer.Ion implantor uniformity control technology is one of key technology of ion implantor, and its operation principle is by with device ion equably, accurately being injected into whole wafer surface by the dosage of setting based on various controls and method of measurement.
The quality of semiconductor device Implantation plays crucial effect to the semiconductor device quality, along with development and the critical size of integrated circuit technology are scaled, such as when semiconductor device accomplishes that 55nm is following, the uniformity of semiconductor device also depends on the control to Implantation to a great extent.Such as the wellblock Implantation, the uniformity of source-drain area Implantation etc. all can exert an influence to the uniformity of resulting devices, sometimes also can produce stack or cancellation effect.In order to monitor the device uniformity, normally, mostly adopt the electrical method of test after manufacturing process is finished.But the shortcoming of this method is to pinpoint the problems and relatively lags behind, and is difficult in time find online problem.
So for the problem that prior art exists, this case designer relies on the industry experience for many years of being engaged in, so the active research improvement is the detection method that has had a kind of semiconductor device of the present invention electrically to lose efficacy.
Summary of the invention
The present invention be directed in the prior art, traditional semiconductor device electric test method is pinpointed the problems relatively and to be lagged behind, and is difficult in time to find that the defective such as online problem provides the detection method of the electrical inefficacy of a kind of semiconductor device.
In order to address the above problem, the invention provides the detection method that a kind of semiconductor device electrically lost efficacy, the detection method that described semiconductor device electrically lost efficacy comprises:
Execution in step S1: GTG is collected, described GTG is collected and is further comprised, a, applying electronic harness defects scanner are set up fixed point scanning formula in the metal connecting layer of semiconductor device, and choose the interior zone of repetitive in the module to be tested, regional as scanning element with the Minimum Area that described electron beam Defect Scanning instrument can scan, described scanning element zone is set as defective by formula and is detected, and takes the electron microscope collection of illustrative plates; B, with semiconductor device with described scanning element zone as sweep object, and under different conditions, scan, respectively the GTG analysis is carried out in the surface sweeping unit area of detecting under the different scanning condition;
Execution in step S2: condition of scanning screening, described condition of scanning screening further comprises, execution in step S21 carries out testing electrical property take the semiconductor device of common process condition preparation as object; Execution in step S22 compares described electrical test data and described GTG collection data, to obtain similarity numerical value; Execution in step S23 averages processing with the similarity numerical value of described semiconductor device under the same scan condition and obtains average similarity numerical value, and the highest described corresponding condition of scanning of average similarity numerical value is defined as the optimum condition of scanning;
Execution in step S3: the GTG analysis of fixing a point, the analysis of described fixed point GTG comprise that the GTG under the described optimum condition of scanning is collected data to be compared with described electrical test data, to obtain electrically effectively GTG collection data interval;
Execution in step S4: electrically failed areas forecast, described electron beam Defect Scanning instrument is analyzed GTG and is collected data, and shows the position of unusual GTG collection data, forecasts that described position is electrical failed areas.
Alternatively, described scanning element zone is 512 * 512 pixels.
Alternatively, the described different condition of scanning is different voltages, different electric current, different brightness, different contrast.
Alternatively, described electron beam Defect Scanning instrument has sensitiveness to the ion beam dopant implant.
Alternatively, when the dosage in the ion beam injection technology or injection condition changes or during deviation, the image gray-scale level data that described electron beam Defect Scanning instrument obtains can change thereupon.
Alternatively, it is 50～100 that described normal GTG is collected the data area, and the zone that differs from described normal GTG collection data area 50～100 is electrical failed areas.
In sum, the GTG that the present invention obtains by electron beam Defect Scanning instrument collects data and described electrical test data compares, can effectively forecast electrical failed areas and electrical effective coverage, for monitoring ion implantation technology quality provides foundation, and for the improvement measure that is about to take provides technical support, for the R﹠D cycle that shortens semiconductor device provides sound assurance.
Description of drawings
Figure 1 shows that the flow chart of the detection method that semiconductor device of the present invention electrically lost efficacy;
Fig. 2 is described to be that electron beam Defect Scanning instrument is to ion beam dopant implant sensitiveness schematic diagram;
Fig. 3 (a) is depicted as the scanning element area schematic;
Fig. 3 (b) is depicted as the gray-scale distribution figure of semiconductor device;
Figure 4 shows that the flow chart that obtains the described condition of scanning;
Figure 5 shows that normal GTG is collected the data area and unusual GTG is collected the schematic diagram of data area.
Embodiment
By the technology contents, the structural feature that describe the invention in detail, reached purpose and effect, below in conjunction with embodiment and cooperate accompanying drawing to be described in detail.
See also Fig. 1, Figure 1 shows that the flow chart of the detection method that semiconductor device of the present invention electrically lost efficacy.The detection method that described semiconductor device electrically lost efficacy may further comprise the steps:
Execution in step S1: GTG is collected; Particularly, described GTG is collected and is further comprised, a, applying electronic harness defects scanner are set up fixed point scanning formula in the metal connecting layer of semiconductor device, and choose the interior zone of repetitive in the module to be tested, regional as scanning element with the Minimum Area that described electron beam Defect Scanning instrument can scan, described scanning element zone is set as defective by formula and is detected, and takes the electron microscope collection of illustrative plates; B, with semiconductor device with described scanning element zone as sweep object, and under different conditions, scan, respectively the GTG analysis is carried out in the surface sweeping unit area of detecting under the different scanning condition; Wherein, described scanning element zone 512 * 512 pixels preferably.The described different condition of scanning includes but not limited to different voltages, different electric current, different brightness, different contrast.
Execution in step S2: condition of scanning screening; Particularly, the screening of the described condition of scanning further comprises, execution in step S21 carries out testing electrical property take the semiconductor device of common process condition preparation as object; Execution in step S22 compares described electrical test data and described GTG collection data, to obtain similarity numerical value; Execution in step S23 averages processing with the similarity numerical value of described semiconductor device under the same scan condition and obtains average similarity numerical value, and the highest described corresponding condition of scanning of average similarity numerical value is defined as the optimum condition of scanning.
Execution in step S3: the GTG analysis of fixing a point; Particularly, the analysis of described fixed point GTG comprises that the GTG under the described optimum condition of scanning is collected data to be compared with described electrical test data, to obtain electrically effectively GTG collection data interval.
Execution in step S4: electrically failed areas forecast.Particularly, described electron beam Defect Scanning instrument is analyzed GTG and is collected data, and shows the position of unusual GTG collection data, forecasts that described position is electrical failed areas.
As the specific embodiment of the present invention, in the present invention, described electron beam Defect Scanning instrument has sensitiveness to the ion beam dopant implant.That is, when the dosage in the ion beam injection technology or injection condition changes or during deviation, the image gray-scale level data that described electron beam Defect Scanning instrument obtains can change thereupon.As shown in Figure 2, Fig. 2 is described is that electron beam Defect Scanning instrument is to ion beam dopant implant sensitiveness schematic diagram.Significantly, described p-type doped region 11 has different luma data from described N-shaped doped region 12.
Nonrestrictive enumerating, the detection method that described semiconductor device electrically lost efficacy may further comprise the steps:
Execution in step S1: GTG is collected; Particularly, shown in Fig. 3 (a), Fig. 3 (b), Fig. 3 (a) is depicted as the scanning element area schematic.Fig. 3 (b) is depicted as the gray-scale distribution figure of semiconductor device.Described GTG is collected and is further comprised, a, applying electronic harness defects scanner are set up fixed point scanning formula in the metal connecting layer of semiconductor device, and choose the interior zone of repetitive in the module to be tested, regional as scanning element with the Minimum Area that described electron beam Defect Scanning instrument can scan, described scanning element zone is set as defective by formula and is detected, and takes the electron microscope collection of illustrative plates; B, with semiconductor device with described scanning element zone as sweep object, and under different conditions, scan, respectively the GTG analysis is carried out in the surface sweeping unit area of detecting under the different scanning condition; Wherein, described scanning element zone 512 * 512 pixels preferably.The described different condition of scanning includes but not limited to different voltages, different electric current, different brightness, different contrast.
Execution in step S2: condition of scanning screening; Particularly, as shown in Figure 4, Figure 4 shows that the flow chart that obtains the described condition of scanning.The screening of the described condition of scanning further comprises, execution in step S21 carries out testing electrical property take the semiconductor device of common process condition preparation as object; Execution in step S22 compares described electrical test data and described GTG collection data, to obtain similarity numerical value; Execution in step S23 averages processing with the similarity numerical value of described semiconductor device under the same scan condition and obtains average similarity numerical value, and the highest described corresponding condition of scanning of average similarity numerical value is defined as the optimum condition of scanning.As those skilled in the art will readily understand ground, the described GTG of described similarity numerical representation method is collected the correlation degree of data and described electrical test data, and the higher then similarity of correlation degree numerical value is larger, and the lower then similarity of correlation degree numerical value is lower.
Execution in step S3: the GTG analysis of fixing a point; Particularly, as shown in Figure 5, Figure 5 shows that normal GTG is collected the data area and unusual GTG is collected the schematic diagram of data area.The analysis of described fixed point GTG comprises that the GTG under the described optimum condition of scanning is collected data to be compared with described electrical test data, to obtain electrically effectively GTG collection data interval.Nonrestrictive enumerating, it is 50～100 that described normal GTG is collected data area 13, the zone that differs from described normal GTG collection data area 50～100 is electrical failed areas 14.
Execution in step S4: electrically failed areas forecast; Described electron beam Defect Scanning instrument is analyzed GTG and is collected data, and shows the position of unusual GTG collection data, forecasts that described position is electrical failed areas.Particularly, in the present invention, the zone that described normal GTG is collected data area 50～100 is electrical effective coverage, and the zone that differs from described normal GTG collection data area 50～100 is electrical failed areas.
In sum, the GTG that the present invention obtains by electron beam Defect Scanning instrument collects data and described electrical test data compares, can effectively forecast electrical failed areas and electrical effective coverage, for monitoring ion implantation technology quality provides foundation, and for the improvement measure that is about to take provides technical support, for the R﹠D cycle that shortens semiconductor device provides sound assurance.
Those skilled in the art all should be appreciated that, in the situation that does not break away from the spirit or scope of the present invention, can carry out various modifications and variations to the present invention.Thereby, if when any modification or modification fall in the protection range of appended claims and equivalent, think that the present invention contains these modifications and modification.
Claims (6)
1. the detection method that electrically lost efficacy of a semiconductor device is characterized in that described method comprises:
Execution in step S1: GTG is collected, described GTG is collected and is further comprised, a, applying electronic harness defects scanner are set up fixed point scanning formula in the metal connecting layer of semiconductor device, and choose the interior zone of repetitive in the module to be tested, regional as scanning element with the Minimum Area that described electron beam Defect Scanning instrument can scan, described scanning element zone is set as defective by formula and is detected, and takes the electron microscope collection of illustrative plates; B, with semiconductor device with described scanning element zone as sweep object, and under different conditions, scan, respectively the GTG analysis is carried out in the surface sweeping unit area of detecting under the different scanning condition;
Execution in step S2: condition of scanning screening, described condition of scanning screening further comprises, execution in step S21 carries out testing electrical property take the semiconductor device of common process condition preparation as object; Execution in step S22 compares described electrical test data and described GTG collection data, to obtain similarity numerical value; Execution in step S23 averages processing with the similarity numerical value of described semiconductor device under the same scan condition and obtains average similarity numerical value, and the highest described corresponding condition of scanning of average similarity numerical value is defined as the optimum condition of scanning;
Execution in step S3: the GTG analysis of fixing a point, the analysis of described fixed point GTG comprise that the GTG under the described optimum condition of scanning is collected data to be compared with described electrical test data, to obtain electrically effectively GTG collection data interval;
Execution in step S4: electrically failed areas forecast, described electron beam Defect Scanning instrument is analyzed GTG and is collected data, and shows the position of unusual GTG collection data, forecasts that described position is electrical failed areas.
2. the electrical detection method that lost efficacy of semiconductor device as claimed in claim 1 is characterized in that described scanning element zone is 512 * 512 pixels.
3. the electrical detection method that lost efficacy of semiconductor device as claimed in claim 1 is characterized in that the described different condition of scanning is different voltages, different electric current, different brightness, different contrast.
4. the electrical detection method that lost efficacy of semiconductor device as claimed in claim 1 is characterized in that described electron beam Defect Scanning instrument has sensitiveness to the ion beam dopant implant.
5. the detection method that electrically lost efficacy of semiconductor device as claimed in claim 4, it is characterized in that, when the dosage in the ion beam injection technology or injection condition changes or during deviation, the image gray-scale level data that described electron beam Defect Scanning instrument obtains can change thereupon.
6. the electrical detection method that lost efficacy of semiconductor device as claimed in claim 1 is characterized in that, it is 50～100 that described normal GTG is collected the data area, and the zone that differs from described normal GTG collection data area 50～100 is electrical failed areas.
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| CN103489808A (en) * | 2013-09-22 | 2014-01-01 | 上海华力微电子有限公司 | Electron beam defect detection method capable of carrying out classification according to ion implantation areas |
| CN104078337A (en) * | 2014-07-25 | 2014-10-01 | 上海华力微电子有限公司 | Monitoring structure and method for P-type light doped ion implantation alignment degree |
| CN104124232A (en) * | 2014-07-25 | 2014-10-29 | 上海华力微电子有限公司 | Structure and method for utilizing homojunction to monitor N-type lightly-doped ion implantation alignment degree |
| CN104124231A (en) * | 2014-07-25 | 2014-10-29 | 上海华力微电子有限公司 | Structure and method for utilizing homotype junction to monitor P type light dope ion implantation alignment |
| CN104465441A (en) * | 2014-11-26 | 2015-03-25 | 上海华力微电子有限公司 | Defect detection method |
| CN106294126A (en) * | 2016-07-22 | 2017-01-04 | 上海华力微电子有限公司 | Automatization's formula correctness management method of SEN ion injection machine table and device |
| CN104124233B (en) * | 2014-07-25 | 2017-02-15 | 上海华力微电子有限公司 | Monitoring structure and method for N-type lightly-doped ion implantation registration |
| CN109725246A (en) * | 2017-10-31 | 2019-05-07 | 无锡华润上华科技有限公司 | The failure analysis method and system of integrated circuit |
| CN109817538A (en) * | 2019-01-22 | 2019-05-28 | 上海华虹宏力半导体制造有限公司 | SRAM failure on-line testing method |
| CN109946586A (en) * | 2019-02-12 | 2019-06-28 | 长江存储科技有限责任公司 | The detection method of chip electrical connection defect |
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| CN103489808A (en) * | 2013-09-22 | 2014-01-01 | 上海华力微电子有限公司 | Electron beam defect detection method capable of carrying out classification according to ion implantation areas |
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| CN109725246B (en) * | 2017-10-31 | 2021-05-11 | 无锡华润上华科技有限公司 | Failure analysis method and system for integrated circuit |
| CN109817538A (en) * | 2019-01-22 | 2019-05-28 | 上海华虹宏力半导体制造有限公司 | SRAM failure on-line testing method |
| CN109946586A (en) * | 2019-02-12 | 2019-06-28 | 长江存储科技有限责任公司 | The detection method of chip electrical connection defect |
| WO2023168796A1 (en) * | 2022-03-08 | 2023-09-14 | 长鑫存储技术有限公司 | Data analysis method and apparatus, and storage medium |
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