CN103184009B - A kind of chemical mechanical polishing liquid - Google Patents
A kind of chemical mechanical polishing liquid Download PDFInfo
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- CN103184009B CN103184009B CN201110445932.3A CN201110445932A CN103184009B CN 103184009 B CN103184009 B CN 103184009B CN 201110445932 A CN201110445932 A CN 201110445932A CN 103184009 B CN103184009 B CN 103184009B
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- mass percent
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- polishing
- abrasive grains
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- 238000005498 polishing Methods 0.000 title claims abstract description 54
- 239000007788 liquid Substances 0.000 title claims abstract description 10
- 239000000126 substance Substances 0.000 title claims abstract description 8
- 239000012530 fluid Substances 0.000 claims abstract description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 239000006061 abrasive grain Substances 0.000 claims abstract description 10
- 230000002401 inhibitory effect Effects 0.000 claims abstract description 10
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 10
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 10
- 239000002280 amphoteric surfactant Substances 0.000 claims abstract description 8
- 239000003112 inhibitor Substances 0.000 claims abstract description 8
- 239000007800 oxidant agent Substances 0.000 claims abstract description 7
- 230000001590 oxidative Effects 0.000 claims abstract description 7
- 239000002738 chelating agent Substances 0.000 claims abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 4
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 6
- MUBZPKHOEPUJKR-UHFFFAOYSA-N oxalic acid group Chemical group C(C(=O)O)(=O)O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 6
- ROOXNKNUYICQNP-UHFFFAOYSA-N Ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims description 4
- OFJATJUUUCAKMK-UHFFFAOYSA-N Cerium(IV) oxide Chemical compound [O-2]=[Ce+4]=[O-2] OFJATJUUUCAKMK-UHFFFAOYSA-N 0.000 claims description 4
- -1 fourth Diacid Natural products 0.000 claims description 4
- DHMQDGOQFOQNFH-UHFFFAOYSA-N glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 4
- OFOBLEOULBTSOW-UHFFFAOYSA-N malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- KFSLWBXXFJQRDL-UHFFFAOYSA-N peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 claims description 4
- 150000003851 azoles Chemical class 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- VPTUPAVOBUEXMZ-UHFFFAOYSA-N (1-hydroxy-2-phosphonoethyl)phosphonic acid Chemical compound OP(=O)(O)C(O)CP(O)(O)=O VPTUPAVOBUEXMZ-UHFFFAOYSA-N 0.000 claims description 2
- KLSJWNVTNUYHDU-UHFFFAOYSA-N 4H-1,2,4-triazol-3-amine Chemical class NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 claims description 2
- XZGLNCKSNVGDNX-UHFFFAOYSA-N 5-methyl-2H-tetrazole Chemical compound CC=1N=NNN=1 XZGLNCKSNVGDNX-UHFFFAOYSA-N 0.000 claims description 2
- 239000004471 Glycine Substances 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N al2o3 Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 229910001870 ammonium persulfate Inorganic materials 0.000 claims description 2
- 239000011324 bead Substances 0.000 claims description 2
- 235000006408 oxalic acid Nutrition 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- 150000000178 1,2,4-triazoles Chemical class 0.000 claims 1
- YDONNITUKPKTIG-UHFFFAOYSA-N ATMP Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 claims 1
- 101700015415 ATMP Proteins 0.000 claims 1
- CHKVPAROMQMJNQ-UHFFFAOYSA-M Potassium bisulfate Chemical compound [K+].OS([O-])(=O)=O CHKVPAROMQMJNQ-UHFFFAOYSA-M 0.000 claims 1
- YXFVVABEGXRONW-UHFFFAOYSA-N toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims 1
- 150000003852 triazoles Chemical class 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 abstract description 14
- 239000000758 substrate Substances 0.000 abstract description 5
- 239000005751 Copper oxide Substances 0.000 abstract description 2
- 229960004643 Cupric oxide Drugs 0.000 abstract description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 abstract description 2
- 229910000431 copper oxide Inorganic materials 0.000 abstract description 2
- NQKXFODBPINZFK-UHFFFAOYSA-N dioxotantalum Chemical compound O=[Ta]=O NQKXFODBPINZFK-UHFFFAOYSA-N 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 7
- 210000003229 CMP Anatomy 0.000 description 5
- 239000004094 surface-active agent Substances 0.000 description 5
- 244000132059 Carica parviflora Species 0.000 description 4
- 235000014653 Carica parviflora Nutrition 0.000 description 4
- 150000001412 amines Chemical group 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 239000003082 abrasive agent Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 239000003093 cationic surfactant Substances 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003628 erosive Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 230000003071 parasitic Effects 0.000 description 2
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- FMCUPJKTGNBGEC-UHFFFAOYSA-N 1,2,4-triazol-4-amine Chemical class NN1C=NN=C1 FMCUPJKTGNBGEC-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N 1,2-ethanediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 1H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 description 1
- USHAGKDGDHPEEY-UHFFFAOYSA-L Potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010668 complexation reaction Methods 0.000 description 1
- HTJDQJBWANPRPF-UHFFFAOYSA-N cyclopropylamine Chemical group NC1CC1 HTJDQJBWANPRPF-UHFFFAOYSA-N 0.000 description 1
- AVXURJPOCDRRFD-UHFFFAOYSA-N hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 230000003287 optical Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 150000003009 phosphonic acids Chemical class 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- 235000019394 potassium persulphate Nutrition 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 210000000009 suboesophageal ganglion Anatomy 0.000 description 1
- 239000001384 succinic acid Substances 0.000 description 1
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Abstract
The invention discloses a kind of chemical mechanical polishing liquid for barrier layer, this polishing fluid comprises abrasive grains, metal inhibitor, chelating agent, oxidant and water, and it also comprises a kind of amphoteric surfactant.The chemical mechanical polishing liquid of the present invention has inhibitory action to the removal rate of ultra low k dielectric materials, but affects the removal rate of tantalum, copper and silicon dioxide (Teos) without obvious, therefore can significantly provide the polishing selectivity of substrate.
Description
Technical field
The present invention relates to a kind of chemical mechanical polishing liquid.
Background technology
In integrated circuit fabrication, the standard of interconnection technique is improving, along with increase and the technology characteristics chi of the interconnection number of plies
Very little reduces, and the requirement to silicon chip surface flatness is more and more higher, without the ability of planarization, on a semiconductor wafer
It is very limited amount of for creating complicated and intensive structure, and cmp method CMP can realize the planarization of whole silicon chip exactly
Most efficient method.
CMP is exactly to use a kind of mixture containing abrasive material and polishing pad polishing integrated circuit surface.In typicalization
Learn in mechanical polishing method, substrate is directly contacted with rotating polishing pad, applies pressure with a loads at substrate back.Throwing
During light, pad and operating board rotate, the power simultaneously kept down at substrate back, by (usual to abrasive material and chemism solution
It is referred to as polishing fluid or polishing slurries) it is applied on pad, this polishing fluid proceeds by with the thin film generation chemical reaction polished
Polishing process.
Along with integrated circuit technique develops (32,28nm) to sub-micro direction, cause because characteristic size reduces
What parasitic capacitance was the most serious affects the performance of circuit, for reducing this impact, is necessary for using Ultra low k dielectric to reduce
Parasitic capacitance between adjacent wires, current more employing Ultra low k dielectric is Coral, except wanting strict during CMP
Control surface contaminant index and stop outside metal erosion, also there is relatively low butterfly depression and polishing homogeneity could be protected
Demonstrate,prove relatively reliable electrical property, the particularly planarization process on barrier layer need under shorter time and lower pressure fast
Speed removes barrier metal, and capping oxide also can well stop at ultra-low-k surface, forms interconnection line, and right
Small size figure is insensitive.This just proposes higher challenge to CMP, because generally ultra-low-k is the oxidation mixing carbon
Silicon, has similar surface hydrophilicity, the residual thickness of stop-layer to be controlled it is necessary to there is the strongest ability of regulation and control selecting ratio,
Also there are the features such as the highest stability and easy cleaning.Because 32,28nm processing procedures are up-to-date technique, there is presently no relevant
The technical patent report of CMP planarization liquid.This patent aim to provide a kind of be suitable for 32, barrier layer in 28nm copper-connection processing procedure is thrown
Light liquid, has the technique stop performance of metal and medium interface under the conditions of relatively mild, and can well control butterfly depression,
Metal erosion and surface contaminant index.
It is abrasive material that patent USP6046112 discloses employing ZrO2, coordinates azanol, carrys out polishing low dielectric material SOG, but should
The cost of material of polishing fluid and production cost are high.Patent US6974777 discloses a kind of polishing fluid for dielectric materials, should
Polishing fluid comprises a kind of HLB value nonionic surfactant more than 7, and this surfactant can suppress the polishing of dielectric materials
Speed.Patent CN200810042571.6 discloses quaternary ammonium salt cationic surfactant for polishing low dielectric material
Application in polishing fluid, in this polishing fluid, quaternary ammonium salt cationic surfactant can suppress the polishing speed of dielectric materials
Rate.Patent CN200610116746.4 discloses a kind of polishing fluid for polishing low dielectric material, and this polishing fluid uses inorganic
Phosphoric acid and salt thereof and organic phosphoric acid and salt thereof improve the polishing speed of dielectric materials.
Summary of the invention
The present invention solves the ultra low k dielectric materials removal speed to metal and silicon dioxide (Teos) in polishing process
Rate selects than uppity topic.
The invention provides a kind of chemical mechanical polishing liquid, this polishing fluid contains abrasive grains, metal inhibitor, complexation
Agent, oxidant, water and a kind of amphoteric surfactant.
Wherein: described amphoteric surfactant is amine oxide type surfactant, for R1(R2)2N+→ O, wherein: R1For-
CmH2m+1, 12≤m≤18, R2For-CH3、-C2H5Or-CH2CH2OH。
The mass percent concentration of described amine oxide type surfactant is: 0.0001～1.0%, is preferably
0.001～0.5%.
Wherein, described abrasive grains is silicon dioxide, aluminium sesquioxide, ceria, the silicon dioxide of adulterated al and/
Or polymer beads；Mass percent concentration is 1～20%, preferably 2～10%；The particle diameter of abrasive grains is 20～150nm,
It is preferably 30～120nm.
Wherein, described metal inhibitor is azole compounds, preferably BTA, methyl benzotriazazole,
1,2,4-triazole, 3-amino-1,2,4-triazoles, 4-amino-1,2,4-triazoles, one in 5-methyl-tetrazole or
Multiple.
Wherein, the mass percent concentration of metal inhibitor is 0.001～2%, preferably 0.01～1%.
Wherein, chelating agent is oxalic acid, malonic acid, succinic acid, citric acid, glycine, 2-phosphonic acid butane-1,2,4-tricarboxylics
Acid, hydroxy ethylene diphosphonic acid, ethylenediamine tetramethylene phosphonic acid, multiple-β transistor and/or amino trimethylene first
Base phosphonic acids.
Wherein, the mass percent concentration of chelating agent is 0.001～2%, preferably 0.01～1%.
Wherein, oxidant is hydrogen peroxide, peracetic acid, potassium peroxydisulfate and/or Ammonium persulfate.；The percent mass of oxidant
Specific concentration is 0.01～1%.
Wherein, the pH value of this chemical mechanical polishing liquid is 2.0～7.0.
The present invention can control going of ultra low k dielectric materials by the content of the amphoteric surfactant in regulation polishing fluid
Removal rates, and the removal rate of tantalum, copper and silicon dioxide (Teos) is affected without obvious, meet in polishing process and substrate is thrown
Optical speed selects the requirement of ratio.
Detailed description of the invention
The advantage of the present invention is expanded on further below by detailed description of the invention.
Table 1 gives the formula of the polishing fluid 1～13 of contrast polishing fluid and the present invention, by formula in table, by the letter of each composition
Single uniformly mixing, surplus is water, uses potassium hydroxide, ammonia and nitric acid to regulate to proper pH level afterwards, can be prepared by each enforcement
Example polishing fluid.
Table 1 contrasts the polishing fluid 1～13 of polishing fluid and the present invention
Use the polishing fluid 1～13 contrasting polishing fluid and the present invention according to following condition to copper, tantalum, silicon dioxide (TEOS)
It is polished with ultra low k dielectric materials (Coral).Polishing condition: polishing pad is Politex 14 ', downforce is 1.5psi, turns
Speed is polishing disk/rubbing head=70/90rpm, and polishing fluid flow velocity is 200ml/min, and polishing time is 2min, Logitech PM5
polisher。
Table 2 contrasts polishing fluid and polishing fluid of the present invention 1～the 13 pairs of copper, tantalum, silicon dioxide (TEOS) and ultra low k dielectric materials
(Coral) removal rate
Result is as shown in table 2: compared with the contrast polishing fluid 1 being not added with amine oxide type surfactant, polishing fluid 1～13
The removal rate inhibiting ultra low k dielectric materials Coral the most in various degree, and copper, tantalum, silicon dioxide (TEOS) are gone
Removal rates impact is little, and the polishing fluid of the present invention can regulate super by the concentration changing amine oxide type surfactant
The removal rate of dielectric materials, it is thus achieved that the polishing speed of technological requirement selects ratio.
Claims (9)
1. a chemical mechanical polishing liquid application in barrier polishing, this polishing fluid is by abrasive grains, metal inhibitor, network
Mixture, oxidant, water and a kind of amphoteric surfactant composition, it is characterised in that described abrasive grains be silicon dioxide,
Aluminium sesquioxide, ceria, the silicon dioxide of adulterated al and/or polymer beads, the particle diameter of described abrasive grains is 20
～150nm, the mass percent concentration of described abrasive grains is 1～20%, and described chelating agent is oxalic acid, malonic acid, fourth
Diacid, citric acid, glycine, 2-phosphonic acid butane-1,2,4-tricarboxylic acids, hydroxy ethylene diphosphonic acid, ethylenediamine tetramethylene
Phosphonic acids, multiple-β transistor and/or ATMP, the mass percent concentration of described chelating agent
Being 0.001～2%, described amphoteric surfactant is R1(R2)2N+→ O, wherein: R1For-CmH2m+1,12≤m≤18,R2For-
CH3、-C2H5Or-CH2CH2OH, the mass percent concentration of described amphoteric surfactant is: 0.0001～1.0%, described
Metal inhibitor be azole compounds, the mass percent concentration of described metal inhibitor is 0.001～2%, describedization
The pH value learning machine polishing liquor is 2.0～7.0.
Application the most according to claim 1, it is characterised in that: the mass percent concentration of described amphoteric surfactant
For: 0.001～0.5%.
Application the most according to claim 1, it is characterised in that: the mass percent concentration of described abrasive grains be 2～
10%.
Application the most according to claim 1, it is characterised in that: the particle diameter of described abrasive grains is 30～120nm.
Application the most according to claim 1, it is characterised in that: described azole compounds is BTA, methylbenzene
And triazole, 1,2,4-triazoles, 3-amino-1,2,4-triazoles, 4-amino-1, in 2,4-triazoles, 5-methyl-tetrazole
One or more.
Application the most according to claim 1, it is characterised in that: the mass percent concentration of described metal inhibitor is
0.01～1%.
Application the most according to claim 1, it is characterised in that: the mass percent concentration of described chelating agent be 0.01～
1%.
Application the most according to claim 1, it is characterised in that: described oxidant is hydrogen peroxide, peracetic acid, over cure
Acid potassium and/or Ammonium persulfate..
Application the most according to claim 1, it is characterised in that: the mass percent concentration of described oxidant be 0.01～
1%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110445932.3A CN103184009B (en) | 2011-12-27 | A kind of chemical mechanical polishing liquid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110445932.3A CN103184009B (en) | 2011-12-27 | A kind of chemical mechanical polishing liquid |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103184009A CN103184009A (en) | 2013-07-03 |
| CN103184009B true CN103184009B (en) | 2016-12-14 |
Family
ID=
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6046112A (en) * | 1998-12-14 | 2000-04-04 | Taiwan Semiconductor Manufacturing Company | Chemical mechanical polishing slurry |
| CN1682354A (en) * | 2002-09-25 | 2005-10-12 | 清美化学股份有限公司 | Polishing compound composition, method for producing same and polishing method |
| JP2006210451A (en) * | 2005-01-26 | 2006-08-10 | Sumitomo Bakelite Co Ltd | Polishing composition |
| CN100341966C (en) * | 2003-09-17 | 2007-10-10 | Cmp罗姆和哈斯电子材料控股公司 | Polishing composition for semiconductor wafers |
| CN101153205A (en) * | 2006-09-29 | 2008-04-02 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution for polishing low dielectric materials |
| CN101397480A (en) * | 2007-09-28 | 2009-04-01 | 富士胶片株式会社 | Polishing liquid and polishing method |
| CN101665664A (en) * | 2008-09-05 | 2010-03-10 | 安集微电子（上海）有限公司 | Quaternary ammonium salt cationic surfactant and application of chemical mechanical polishing solution |
| CN101821354A (en) * | 2007-10-10 | 2010-09-01 | 第一毛织株式会社 | Slurry composition for chemical mechanical polishing of metal and polishing method using the same |
| CN102212315A (en) * | 2010-04-08 | 2011-10-12 | 福吉米株式会社 | Polishing composition and polishing method |
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6046112A (en) * | 1998-12-14 | 2000-04-04 | Taiwan Semiconductor Manufacturing Company | Chemical mechanical polishing slurry |
| CN1682354A (en) * | 2002-09-25 | 2005-10-12 | 清美化学股份有限公司 | Polishing compound composition, method for producing same and polishing method |
| CN100341966C (en) * | 2003-09-17 | 2007-10-10 | Cmp罗姆和哈斯电子材料控股公司 | Polishing composition for semiconductor wafers |
| JP2006210451A (en) * | 2005-01-26 | 2006-08-10 | Sumitomo Bakelite Co Ltd | Polishing composition |
| CN101153205A (en) * | 2006-09-29 | 2008-04-02 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution for polishing low dielectric materials |
| CN101397480A (en) * | 2007-09-28 | 2009-04-01 | 富士胶片株式会社 | Polishing liquid and polishing method |
| CN101821354A (en) * | 2007-10-10 | 2010-09-01 | 第一毛织株式会社 | Slurry composition for chemical mechanical polishing of metal and polishing method using the same |
| CN101665664A (en) * | 2008-09-05 | 2010-03-10 | 安集微电子（上海）有限公司 | Quaternary ammonium salt cationic surfactant and application of chemical mechanical polishing solution |
| CN102212315A (en) * | 2010-04-08 | 2011-10-12 | 福吉米株式会社 | Polishing composition and polishing method |
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