CN103325412A - Integrated circuit with dynamic sensing intervals and operation method thereof - Google Patents
Integrated circuit with dynamic sensing intervals and operation method thereof Download PDFInfo
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- CN103325412A CN103325412A CN2012100739739A CN201210073973A CN103325412A CN 103325412 A CN103325412 A CN 103325412A CN 2012100739739 A CN2012100739739 A CN 2012100739739A CN 201210073973 A CN201210073973 A CN 201210073973A CN 103325412 A CN103325412 A CN 103325412A
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Abstract
The invention discloses an integrated circuit with dynamic sensing intervals and an operation method thereof. The integrated circuit concludes a memory array which is characterized by a threshold definition; and the memory array includes a plurality of threshold-voltage ranges which show stored data values by a portion of the memory array, and a set of sensing intervals which divide the plurality of threshold-voltage ranges. The threshold definition is variable to respond to at least one of a programming operation and an erasure operation, and the operation changes are one distribution of the data values stored by the portion of the memory array.
Description
Technical field
The present invention relates to technical field of integrated circuits, relate in particular to a kind of integrated circuit and method of operating thereof with dynamic sensing interval.
Background technology
The threshold voltage ranges of storage unit be with can be stored in this storage unit in the different pieces of information value relevant.And these threshold voltage ranges of separation between sensing area.For example, less threshold voltage ranges can representative data value " 1 ", and larger threshold voltage ranges can representative data value " 0 ", and separates these less threshold voltage ranges and larger threshold voltage ranges between sensing area.One usually corresponding with less storage errors between between sensing area wider between adjacent threshold voltage ranges, because a particular threshold voltage of some storage unit can be determined to belong in this wrong threshold voltage ranges to become more impossible mistakenly.
United States Patent (USP) discloses a kind of storage method of storer for No. 7330376, wherein the threshold voltage ranges relevant with different pieces of information value in the storage unit has this storage unit is divided into a plurality of less storage unit, and each less storage unit has fewer purpose storage unit.The threshold voltage ranges of one less storage unit for example is because less in the process variations than in the zonule of this wafer normally less than the threshold voltage ranges of a larger storage unit.Therefore, when the area of storage unit diminished, a particular threshold voltage of some storage unit can be determined that mistakenly the situation that belongs to the misdata value of representative in this wrong threshold voltage ranges can become more impossible.
Yet, in the true-time operation of a storage array, storage unit can not be cut apart, and the ongoing operational example of response storage is programmed in this way or is wiped.In addition, only be by the smaller the better improvement that each storage unit is become its limit also to be arranged between sensing area.Larger storage unit has advantages of when this storage array of access can reduce its related management time.
Summary of the invention
Technology described herein provides a storage array, and to be divided into a plurality of for example be the storage group of the page.Change the definition of this threshold value and be response programming operation and erase operation one of at least, its change is by a distribution of this this data value that partly stores of this storage array.This change can be carried out by the control circuit in the test machine outside the control circuit in this integrated circuit or this integrated circuit.This part of this storage array defines in addition characterization by this threshold value, comprises (i) a plurality of threshold voltage ranges representatives by the data value that stores in this part of this storage array, and (ii) these a plurality of threshold voltage ranges of separation between one group of sensing area.The example of other storage group size is character, word line, section, reaches half page.
An example that changes the definition of this threshold value is, changes this threshold voltage ranges, for example decides the width of this threshold voltage ranges according to the relative distribution of this data value.One first threshold voltage range is wider than a Second Threshold voltage range, and responding one first data value by this first threshold voltage range representative that this particular memory group stores a larger amt, it is with respect to one second data value by this Second Threshold voltage range representative.
An example that changes the definition of this threshold value is, changes between this group sensing area, for example changes at least one position between this threshold value at least one sensing area in defining.
When this threshold value definition change partly of this storage array, then the access features of this part of this storage array (for example reading or programming operation) also changes.An embodiment comprises that more reference memory stores at least one access features skew of this part of this storage array, the threshold value definition change of this part that this at least one access features skew is this storage array of compensation.The example of access features is the reference current skew of program verification, a word line level deviation of program verification, a reference current that reads skew, and a word line level deviation that reads.Be offset this part of this storage array of access according to this access features in this reference memory.
In one embodiment, one of this reference memory read the time no longer than the setup times of this part of this storage array of word line access.In this when part of this this storage array of word line setup times access, the access features that this reference memory can access reads this part of this storage array is offset.Has in the shorter example that reads the time this reference memory more close this word line driver of this part of this storage array in this part of this storage array in this reference memory.Have in shorter another example that reads the time in this reference memory, the second storage array that one of word line access comprises this reference memory this this storage array of word line access has the shorter access time.The second storage array comprises that a reference memory stores at least one access features skew of this part of this storage array, this threshold value definition change of this part of this this storage array of access features migration.
In one embodiment, use has this reference memory of mode access of error correcting code.
In one embodiment, change the definition of this threshold value, and response is stored in the different relative populations between this data value in different individual in this part of this storage array.The example of relative populations is first quantity being stored in one of this data value in this part of this storage array with respect to ratio of one or more other quantity of one or more other data values in this part that is stored in this storage array or number percent.
Another object of the present invention is for providing a kind of method, comprise: change the threshold value definition of the part of a storage array, and response programming operation and erase operation are one of at least, its change is by a distribution of this this data value that partly stores of this storage array, wherein this part of this storage array defines in addition characterization by a threshold value, comprise (i) a plurality of threshold voltage ranges representatives by this data value that partly stores of this storage array, and (ii) separate these a plurality of threshold voltage ranges between one group of sensing area.
Disclose the example of this threshold value definition of change herein, for example change at least one position between at least one sensing area in this threshold value definition.
Other example comprises, reads this reference memory of at least one access features skew of this part that stores this storage array, the change of this threshold value definition of this part that this access features skew is this storage array of compensation; And this part that is offset this storage array of access according to this at least one access features.
Other example comprises, read this reference memory of at least one access features skew of this part that stores this storage array, the skew of this access features is the change that this threshold value of this part of this storage array of compensation defines, and reads in the time it no longer than the setup times of this part of this storage array of access in one.
Another purpose of the present invention for example is the storage group of the page for providing storage array to be divided into a plurality of.Relative populations according to this data value in this part that is stored in this storage array changes this threshold value definition.This part of storage array defines in addition characterization by a threshold value, comprises (i) a plurality of threshold voltage ranges representatives by this data value that partly stores of this storage array, and (ii) separates these a plurality of threshold voltage ranges between one group of sensing area.The example of other storage group size is character, word line, section, reaches half page.
In one embodiment, the change of this threshold value definition be response programming operation and erase operation one of at least, its change is by a distribution of these these a plurality of data values that partly store of this storage array.
In one embodiment, this relative populations is first quantity being stored in one of this data value in this part of this storage array with respect to ratio or the number percent of one or more other quantity of one or more other data values in this part that is stored in this storage array.
Description of drawings
Fig. 1 is threshold voltage and the icon of position counting, has to read reference voltage and will be stored in the voltage range separation that represent the different pieces of information value in this storage unit.
Fig. 2 shows the threshold voltage of whole storage array and the icon of position counting, reaches the threshold voltage of two different pages in this array and the icon of position counting.To in this memory page by the stored particular data value of storage unit, the threshold voltage ranges that two different memory pages have different in width represents these particular data value.
Fig. 3 is the threshold voltage of different size storage group and the icon of position counting, the relation of display threshold voltage range and storage group's (for example page) size.
Fig. 4 is threshold value definition, shows the threshold voltage ranges that represents the different pieces of information value, and separates between the sensing area of threshold voltage ranges, and wherein threshold voltage ranges has the change width.
Fig. 5 to Fig. 8 be some form display cases in this way the storage group of the page store a particular data value of different relative populations (phase number of bits), and change following parameter: represent the threshold voltage ranges of this particular data value, and decision represents the width variation of the threshold voltage ranges of this particular data value.
Fig. 9 is one for example to be the threshold value definition of the storage group of the page, shows represent the threshold voltage ranges of different pieces of information value, and reads between reference voltage and sensing area, and it is defined by data distribution of crossing over whole storage array.The data of for example, crossing over whole storage array distribute can be as shown in Figure 1.
Figure 10 is one for example to be the threshold value definition of the storage group of the page, shows represent the threshold voltage ranges of different pieces of information value, and reads between reference voltage and sensing area, and it is defined by data distribution of crossing over whole storage array.
Figure 11 to Figure 12 is exemplary flowchart, shows the data programing according to the stored reference group position (or access features skew bit) of the data distribution of storing group's (for example being the page) and this storage group.
Figure 13 is exemplary flowchart, shows that the data that data distribute and this stores the stored reference group position (or access features skew bit) of group according to storage group (for example being the page) read.
Figure 14 is an exemplary block diagram, and it is to place array or the access that distance stores with reference to the group position away from word line driver to be offset the nearer storage array of access features that its demonstration has main array.
Figure 15 is an exemplary block diagram, and it is to have long word line that its demonstration has larger main array, and it has a storage array of shorter word line with reference to group position or access skew access features and less referential array stores.
Figure 16 shows main array and stores with reference to group position or the different setup times of the array of access features offset data.
Figure 17 is exemplary flowchart, show that data according to storage group (for example being the page) distribute and mistake in using more data of the stored reference group position (or access features skew bit) of this storage group of code read.
Figure 18 shows the according to an embodiment of the invention simplification block schematic diagram of improvement storage integrated circuit.
[main element symbol description]
1850: integrated circuit
1800: store array of nonvolatile memory cells and reference memory with reference to group data
1801: column decoder
1802: the word line
1803: line decoder
1804: bit line
1805: bus
1807: data bus
1806: sensing amplifier/data input structure
1809: programme, wipe and read the threshold value definition of adjustment bias state mechanism change and access features
1808: bias voltage adjustment supply voltage
1811: Data In-Line
1815: DOL Data Output Line
Embodiment
Example shown here is to have four data values in the storage unit.Other example can be to have two data values, have eight data values or have the data value of other numbers.
Fig. 1 is the graph of a relation of threshold voltage and figure place, and it has and reads reference voltage and separate will be stored in the voltage range that represents the different pieces of information value in this storage unit.
Read reference voltage-RD1, RD2, RD3-and all be arranged in the minimum value place that whole storage array storage unit threshold voltage distributes.When a read operation, whether storage unit is higher or lower than a specific reference voltage that reads according to its threshold voltage value and decides stored particular data value.This reads reference voltage and will be stored in the threshold voltage ranges that represents the different pieces of information value in this storage unit and be divided into several threshold voltage ranges.The first threshold voltage range that reaches as high as RD1 represents one first data value.Second Threshold voltage range between between RD1 and RD2 represents one second data value.The 3rd threshold voltage ranges between between RD2 and RD3 represents one the 3rd data value.Minimumly represent one the 4th data value for the 4th threshold voltage ranges of RD3.In actual threshold voltage definition, threshold voltage ranges as shown in Fig. 4, Fig. 9 and Figure 10 by being separated between sensing area.
Fig. 2 shows the threshold voltage of whole storage array and the graph of a relation of figure place, reaches the threshold voltage of two different pages in this array and the graph of a relation of figure place.To in this memory page by the stored particular data value of storage unit, these particular data value are to be represented by the threshold voltage ranges that has different in width in two different memory pages.Memory page A has one group of threshold voltage and distributes and use long dotted line to represent, and memory page B has one group of threshold voltage use short dash line that distributes and represents.
For for one first data value of the first threshold voltage range representative that reaches as high as RD1, memory page A has a larger threshold voltage compared to memory page B and distributes and wider threshold voltage ranges.For for one second data value of the Second Threshold voltage range representative between between RD1 and RD2, memory page A has a less threshold voltage compared to memory page B and distributes and narrower threshold voltage ranges.For for one the 3rd data value of the 3rd threshold voltage ranges representative between between RD2 and RD3, memory page A has a very large threshold voltage compared to memory page B and distributes and very wide threshold voltage ranges.For for one the 4th data value of minimum the 4th threshold voltage ranges representative for RD3, memory page A and memory page B have similar threshold voltage and distribute and similar threshold voltage ranges.
Fig. 2 shows, the data that the different memory pages in an identical storage array can have large-scope change distribute, and its threshold voltage with large-scope change distributes and threshold voltage ranges represents and is stored in data values different in the memory page.The change between on a large scale although these threshold voltages in the different pages distribute, the threshold voltage distributions that reference voltage-RD1, RD2, RD3-be still by the storage unit between whole storage array that reads shown in Fig. 2 determines.
The reference voltage that reads shown in Fig. 2 is not to be positioned at the midpoint that the adjacent threshold voltage of a memory page distributes usually.For example, for memory page A and memory page B, read reference voltage RD2 and be not the midpoint (mid point is defined as the centre than the minimum value of the maximal value of low threshold voltage scope and higher threshold voltage scope) at adjacent two threshold voltage ranges, but on the right side of the real mid point of two adjacent threshold voltage ranges of memory page A and the left side of the real mid point of two adjacent threshold voltage ranges of memory page B.Because the real mid point of two adjacent threshold voltage ranges is to read reference voltage different, different memory pages have nonideal reading between reference voltage and nonideal sensing area.
Fig. 3 is the threshold voltage of different size storage group and the graph of a relation of figure place, the relation between its display threshold voltage range and storage group's (for example page) size.
On this graphic right side, show that three nido threshold voltages together distribute.The threshold voltage of these three nidos distributes respectively with 512 distribution, 64 distributions, to reach 8 distributions corresponding.The threshold voltage of these three nidos distributes has the narrower dispersion of distribution (threshold voltage ranges) in the less position count distribution of circled partial display.
Fig. 4 is threshold value definition, shows the threshold voltage ranges that represents the different pieces of information value, and separates between the sensing area of threshold voltage ranges, and wherein threshold voltage ranges has the width of change.
Three are read reference voltage is respectively RD1, RD2, RD3.One first data value of first threshold voltage range representative has the width that is determined by width W 1 and extra twice dispersion of distribution DW1 (each one of the both sides of W1).The maximal value of width W 1 is at the B2_min place, and it determines by making data.
One second data value of Second Threshold voltage range representative has the width that is determined by width W 2 and extra twice dispersion of distribution DW2 (each one of the both sides of W2).The minimum value of Second Threshold voltage range is program verification voltage PV1.
One the 3rd data value of the 3rd threshold voltage ranges representative has the width that is determined by width W 3 and extra twice dispersion of distribution DW3 (each one of the both sides of W3).The minimum value of the 3rd threshold voltage ranges is program verification voltage PV2.
One the 4th data value of the 4th threshold voltage ranges representative has the width that is determined by width W 4 and extra twice dispersion of distribution DW4 (each one of the both sides of W4).The minimum value of width W 4 is at the B7_min place, and it determines by making data.The minimum value of the 4th threshold voltage ranges is program verification voltage PV3.
SW1 separates the first and second threshold voltage ranges between sensing area.SW2 separates the second and the 3rd threshold voltage ranges between sensing area.SW3 separates the third and fourth threshold voltage ranges between sensing area.
An example between sensing area is defined as follows.In the definition example between this sensing area, SW1, SW2, SW3 have identical width between sensing area.In addition, in the definition example between this sensing area, reading reference voltage is that RD1, RD2, RD3 are difference position SW1, SW2, SW3 midpoint between sensing area separately.Program verification voltage PV1, PV2, PV3 be the separately maximal value place of SW1, SW2, SW3 between sensing area.
SW1＝[(B7_min-B2_min)-DW1-(W2+2*DW2)-(W3+2*DW3)-DW4]*1/3
SW2＝[(B7_min-B2_min)-DW1-(W2+2*DW2)-(W3+2*DW3)-DW4]*1/3
SW3＝[(B7_min-B2_min)-DW1-(W2+2*DW2)-(W3+2*DW3)-DW4]*1/3
RD1＝(B2_min)+DW1+0.5*SW1
PV1＝RD1+0.5*SW1
RD2＝[PV1+(W2+2*DW2)+0.5*SW2]
PV2＝RD2+0.5*SW2
RD3＝[PV2+(W3+2*DW3)+0.5*SW3]
PV3＝RD3+0.5*SW3
Another example between sensing area is defined as follows.In the definition example between this sensing area, SW1, SW2, SW3 have basis ratio ratio 1, ratio 2, the relative width of ratio 3, wherein 0＜ratio 1 ≠＜1, ratio 1+ratio 2+ratio 3=1 separately between sensing area.In addition, in the definition example between this sensing area, reading reference voltage is that RD1, RD2, RD3 are the relative position places of SW1, SW2, SW3 between sensing area separately, and it is that basis value r1, r2, r3 separately decides, and 0＜r# ≠＜1.Program verification voltage PV1, PV2, PV3 are the maximal value places of SW1, SW2, SW3 between sensing area separately.
SW1＝[(B7_min-B2_min)-DW1-(W2+2*DW2)-(W3+2*DW3)-DW4]*ratio?1
SW2＝[(B7_min-B2_min)-DW1-(W2+2*DW2)-(W3+2*DW3)-DW4]*ratio?2
SW3＝[(B7_min-B2_min)-DW1-(W2+2*DW2)-(W3+2*DW3)-DW4]*ratio?3
RD1＝(B2_min)+DW1+r1*SW1
PV1＝RD1+(1-r1)*SW1
RD2＝[PV1+(W2+2*DW2)+r2*SW2]
PV2＝RD2+(1-r2)*SW2
RD3＝[PV2+(W3+2*DW3)+r3*SW3]
PV3＝RD3+(1-r3)*SW3
Fig. 5 to Fig. 8 be some display cases in this way the storage group of the page store the form of a particular data value of different relative populations (phase number of bits), and following parameter can change: represent the threshold voltage ranges of this particular data value, and decision represents the width variation of the threshold voltage ranges of this particular data value.
In the example of Fig. 5 to Fig. 8, a particular memory location position can store four data values.These four data values are distributed by four threshold voltages respectively: distribution 1, distribution 2, distribution 3, distribution 4 represent.The size of each distribution is to determine according to the data value by the representative of separately threshold voltage distributions.Fig. 5, Fig. 6, Fig. 7, Fig. 8 show respectively the details of distribution 1, distribution 2, distribution 3, distribution 4.
In an example, have 100 positions in the storage group.Its absolute profile be distribute 1 have 25 positions, distribute 2 have 25 positions, distribute 3 have 25 positions, distributing 4 has 25 positions.Its relative distribution then be distribute 1 have 25%, distribute 2 have 25%, distribute 3 have 25%, distributing 4 has 25%.According to separately shown in the figure of Fig. 5 to Fig. 8,25% relative distribution is the 2nd hurdle in each distribution of this form (distribute 1, distribute 2, distribute 3, distribute 4).According to the distribution 1 of Fig. 5, distribution 11 is selected has change width D W11.According to the distribution 2 of Fig. 6, distribution 21 is selected has change width D W21.According to the distribution 3 of Fig. 7, distribution 31 is selected has change width D W31.
Fig. 9 is one for example to be the threshold value definition of the storage group of the page, shows represent the threshold voltage ranges of different pieces of information value, and reads between reference voltage and sensing area, and it is defined by data distribution of crossing over whole storage array.The data of for example, crossing over whole storage array distribute can be as shown in Figure 1.As what explain among Fig. 2, it is to be caused by nonideal reading between reference voltage and sensing area that the incremental data of different memory pages distributes.Therefore, SW3A approximately is the twice of SW1A between sensing area between sensing area.SW2A then has a medium-width between the width of SW1A between sensing area and SW3A between sensing area.
Figure 10 is one for example to be the threshold value definition of the storage group of the page, shows represent the threshold voltage ranges of different pieces of information value, and reads between reference voltage and sensing area, and it is defined by data distribution of crossing over whole storage array.
After four threshold voltages of definition distributed, remaining threshold voltage definition was cut apart among impartial SW1A, SW2A between sensing area and the SW3A.Three are read reference voltage RD1, RD2, RD3 is respectively in the midpoint of SW1A, SW2A, SW3A between sensing area separately.One or more width and positions in this threshold value definition between sensing area among SW1A, SW2A, the SW3A change to some extent.
Figure 11 to Figure 12 is for showing the exemplary flowchart according to the data programing operation of the data distribution of storing group's (for example being the page) and this stored reference group position (or access features skew bit) of storing group.
In Figure 11, this flow process is from inputting the data that are about to be programmed in the particular memory group.Produce first " with reference to group position (RGB) " to determine its access features skew (for example programming characteristic or read characteristic) this particular memory group of access.The example of access features skew can be reference current or the array word line level of program verification, and it is to define to produce according to the threshold value of storing thus the decision of group data distributions.Afterwards, new data is programmed.Carrying out program verification in these data that newly are programmed, is to be offset to adjust by the access features that reference group position (RGB) is described.If by program verification, then finish this programming.Otherwise, if program fail then re-starts the programming of these data.
Figure 12 is similar to Figure 11.Yet the present data of this particular memory group distribute and are determined, and have produced the position with reference to group.Relative, in Figure 11, this is to distribute according to the data of stored data in this storage group before the programming to produce with reference to the group position, and this new data is about to programming.
Figure 13 is the exemplary flowchart according to the data read operation of the stored reference group position (or access features skew bit) of the data distribution of storage group (for example being the page) and this storage group.
Respond a reading order, read with reference to group position (RGB) array to obtain " with reference to group position (RGB) " its " access features skew " (for example programming characteristic or read characteristic) that shows sense data with this particular memory group of access.According to " with reference to group position (RGB) " data, be offset its access features (for example reference current of program verification or array word line level), it is to define to produce according to storing thus the threshold value that the data distributions determines in the group.This sensing amplifier is according to this skew access features sense data, and this sensing amplifier is exported its sense data.
Figure 14 is the exemplary block diagram of a storage array, shows that having main array in this storage array with respect to storing for the array of group position or the array of access skew access features is to be positioned over away from the word line driver place.
The word line extends to reference to group position (RGB) array (with reference to the array of group position or the storage array of access features, being also referred to as referential array) then to main array from XDRV (word line driver).Because referential array by near a part of word line institute access of word line driver, a part of word line charging of access referential array very fast and finish arrange very fast.Relative, because main array is by a part of word line institute access away from word line driver, a part of word line charging of the main array of access is slow and to finish setting slower.
Figure 15 is the exemplary block diagram of a storage array, shows that having larger main array in this storage array is to have long word line, and it has shorter word line with reference to group position or access skew access features and less referential array stores.
In a larger storage array, the word line extends to main array from XDRV (word line driver).In a less storage array, the word line extends to reference to group position (RGB) array (with reference to the array of group position or the storage array of access features, being also referred to as referential array) from XDRV (word line driver).Because referential array is by a part of word line access near word line driver, a part of word line of access referential array charges very fast and finishes and arranges comparatively fast.Relative, because main array is by a part of word line access away from word line driver, a part of word line charging of the main array of access is slow and to finish setting slower.
Figure 16 shows main array and stores with reference to group position or the different setup times of the array of access features offset data.
According to the embodiment shown in Figure 14 or Figure 15, the setup times of referential array, and the self-reference array received is to finish in the setup times of the word line of this main array carries out with reference to sensing time of group position.As in the case, storage operation can be because of waiting for that access be delayed with reference to the data of group position.
Figure 17 is for showing data according to storage group (for example being the page) and distribute and the mistake in using exemplary flowchart of the data read operation of the stored reference group position (or access features skew bit) of this storage group of code more.
This reads flow process is the flow process that reads that is similar among Figure 13, but many error correcting codes.In order to respond a reading order, read with reference to group position (RGB) array to obtain " with reference to group position (RGB) " its " access features skew " (for example programming characteristic or read characteristic) that shows sense data with this particular memory group of access.Error correcting code is the mistake of correcting from " with reference to group position (RGB) " of referential array.The feature of this error correcting code can be the hardware characteristics in this storer, or the software features take extra delay as cost.According to " with reference to group position (RGB) " data, be offset its access features (reference current that for example reads or read the level of array word line), it is to define to produce according to storing thus the threshold value that the data distributions determines in the group.This sensing amplifier is according to this skew access features sense data, and this sensing amplifier is exported its sense data.
Figure 18 shows the according to an embodiment of the invention simplification block schematic diagram of improvement storage integrated circuit.Wherein integrated circuit 1850 comprises storage array 1800.One word line (row) code translator and block select code translator 1801 with along many word lines 1802 of storage array 1800 column direction arrangements and serial selection line couples and electrically link up.One bit line (OK) code translator and driver 1803 with along the multiple bit lines 1804 of storage array 1800 line direction arrangements and serial selection line couples and electrically link up, with certainly storage unit reading out data and the data writing of this storage array 1800.The address is to offer word-line decoder and block selection code translator 1801 and bit line decoder and driver 1803 by bus 1805.Sensing amplifier in the square 1806 and data input structure, comprise read, the current source of programming and erasing mode, couple via bus 1807 and bit line decoder.Data offer Data In-Line 1818 by the input/output end port on the integrated circuit 1850 and input to data input structure in the square 1806.Data are by the sensing amplifier in the square 1806, via DOL Data Output Line 1815, provide the I/O end to the integrated circuit, perhaps to the data source of integrated circuit 1850 other inner/outer.Programme, wipe and read the 1809 movement threshold definition of adjustment bias state mechanism and have the data definition that is suitable for the difference storage group that for example is memory page between threshold voltage ranges and sensing area, and control the application that voltage 1808 is supplied in the bias voltage adjustment.
Preferred embodiment of the present invention and example disclose as above in detail, but are to be appreciated that above-mentioned example only as example, and be non-in order to limit the scope of patent.With regard to the people who knows this skill, from can according to the claim scope of enclosing correlation technique being made amendment easily and make up.
Claims (23)
1. integrated circuit comprises:
One storage array has threshold value definition, comprises (i) a plurality of threshold voltage ranges, and it represents a part of stored data value by this storage array, and (ii) separates these a plurality of threshold voltage ranges between one group of sensing area; Wherein
Response programming operation and erase operation wherein one of at least, it is the distribution that change is stored in the data value in the some of a storage array, and changes the threshold value definition of this part of this storage array.
2. integrated circuit according to claim 1, wherein this storage array is divided into a plurality of storage group, storage group in this a plurality of storage group by this institute of storage group specifically a threshold value define in addition characterization, response programming operation and erase operation wherein one of at least, it is that change is stored in this a plurality of distributions of storing this data value of the storage groups storage in the group, and changes this a plurality of threshold value definition of storing this storage group in the group.
3. integrated circuit according to claim 1 more comprises:
Control circuit, it changes this threshold value definition.
4. integrated circuit according to claim 1, wherein a test machine changes this threshold value definition.
5. integrated circuit according to claim 1, wherein this threshold value definition changes by changing this threshold voltage ranges.
6. integrated circuit according to claim 1, wherein this threshold value definition changes by the width according to this threshold voltage ranges of a relative distributions decision of this data value.
7. integrated circuit according to claim 1, wherein this threshold value definition changes by the width that determines these a plurality of threshold voltage ranges, so that in this part of this storage array, one first threshold voltage range is wider than a Second Threshold voltage range, and respond this storage array this partly store one first data value by this first threshold voltage range representative of a larger amt, it is with respect to one second data value by this Second Threshold voltage range representative.
8. integrated circuit according to claim 1, wherein this threshold value definition changes by changing between this group sensing area.
9. integrated circuit according to claim 1, wherein this threshold value definition changes by at least one position that changes between at least one sensing area in this threshold value definition.
10. integrated circuit according to claim 1 more comprises:
Reference memory, this this threshold value that partly compensates this part of this storage array that stores this storage array defines at least one access features skew of change,
Wherein this at least one access features skew comprises one or more:
The one reference current skew of this part program verification of this storage array, one word line level deviation of this part program verification of this storage array, the reference current skew that this of this storage array partly reads, the word line level deviation that this of this storage array partly reads; And
Wherein be offset this part of this storage array of access according to this at least one access features in this reference memory.
11. integrated circuit according to claim 1 more comprises:
Reference memory, at least one access features that stores this part of this storage array is offset the access that it revises this part of this storage array;
Wherein one of this reference memory read the time no longer than the setup times of this part of this storage array of word line access.
12. integrated circuit according to claim 1 more comprises:
Word line driver and this storage array couple;
Wherein this storage array comprise that a reference memory stores this storage array this partly compensate at least one access features skew of this threshold value definition change of this part of this storage array, and this reference memory of this part of this storage array more close this word line driver of this part of this storage array.
13. integrated circuit according to claim 1 more comprises:
More than first the word line has first this storage array of length access;
The second storage array comprise that a reference memory stores this storage array this partly compensate at least one access features skew of this threshold value definition change of this part of this storage array;
More than second the word line has this second storage array of the second length access, and this second length this first length is shorter.
14. integrated circuit according to claim 1 more comprises:
Reference memory, this this threshold value that partly compensates this part of this storage array that stores this storage array defines at least one access features skew of change;
Wherein this reference memory is used the mode access with error correcting code.
15. integrated circuit according to claim 1, wherein this threshold value definition can change, and responds this data value of the different relative populations in this part that is stored in this storage array.
16. integrated circuit according to claim 15, wherein this relative populations is to be stored in one first quantity of one of these a plurality of data values of this part of this storage array with respect to ratio or the number percent of one or more other quantity of one or more other data values of this part that is stored in this storage array.
17. a memory operating method comprises:
Response programming operation and erase operation wherein one of at least, it is the distribution that change is stored in the data value in the some of a storage array, and changes the threshold value definition of this part of this storage array,
Wherein this part of this storage array defines in addition characterization by this threshold value, comprise (i) a plurality of threshold voltage ranges representatives by the stored data value of this part of this storage array, and (ii) separate these a plurality of threshold voltage ranges between one group of sensing area.
18. method according to claim 17 wherein changes this threshold value definition, comprises at least one position between at least one sensing area in this threshold value definition of change.
19. method according to claim 17 more comprises:
Read the reference memory of at least one access features skew of this part that stores this storage array, the change of this threshold value definition of this part that this access features skew is this storage array of compensation; And
Be offset this part of this storage array of access according to this at least one access features.
20. method according to claim 17 more comprises:
Read in the time in its setup times no longer than this part of this storage array of access in one, read the reference memory of at least one access features skew of this part that stores this storage array, the change of this threshold value definition of this part that this access features skew is this storage array of compensation.
21. an integrated circuit comprises:
One storage array has threshold value definition, comprises (i) a plurality of threshold voltage ranges representatives by the data value of some storages of this storage array, and (ii) separates these a plurality of threshold voltage ranges between one group of sensing area; And
The definition of this threshold value is that the relative populations according to these a plurality of data values in this part that is stored in this storage array changes.
22. integrated circuit according to claim 21, wherein the change of this threshold value definition is the response change by the programming operation of a distribution of these this a plurality of data values that partly store of this storage array and erase operation one of at least.
23. integrated circuit according to claim 21, wherein this relative populations is first quantity being stored in one of these a plurality of data values in this part of this storage array with respect to ratio or the number percent of one or more other quantity of one or more other data values in this part that is stored in this storage array.
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| CN107068184A (en) * | 2015-11-25 | 2017-08-18 | 旺宏电子股份有限公司 | Storage arrangement and the method for operating memory |
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