CN103367343A - Light-emitting module - Google Patents

Light-emitting module Download PDF

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Publication number
CN103367343A
CN103367343A CN2012101019400A CN201210101940A CN103367343A CN 103367343 A CN103367343 A CN 103367343A CN 2012101019400 A CN2012101019400 A CN 2012101019400A CN 201210101940 A CN201210101940 A CN 201210101940A CN 103367343 A CN103367343 A CN 103367343A
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CN
China
Prior art keywords
light emitting
emitting module
luminescence chip
circuit board
reflector
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Pending
Application number
CN2012101019400A
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Chinese (zh)
Inventor
陈中豪
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Delta Optoelectronics Inc
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Delta Optoelectronics Inc
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Application filed by Delta Optoelectronics Inc filed Critical Delta Optoelectronics Inc
Priority to CN2012101019400A priority Critical patent/CN103367343A/en
Publication of CN103367343A publication Critical patent/CN103367343A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
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    • H01L2224/48091Arched
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H01L2224/48228Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item the bond pad being disposed in a recess of the surface of the item
    • HELECTRICITY
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    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48464Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49107Connecting at different heights on the semiconductor or solid-state body
    • HELECTRICITY
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4911Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49175Parallel arrangements
    • HELECTRICITY
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    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

Abstract

Disclosed is a light-emitting module including a circuit board, a reflection layer, at least one light-emitting chip and at least one metal wire. The circuit board is provided with at least one connection pad. The reflection layer is arranged on the circuit board and is provided with at least one first opening exposing the connection pad and at least one second opening exposing part of the circuit board. The light-emitting chips are arranged in the second openings. The metal wires are provided with first endpoints which are connected with the connection pads through the first openings and second endpoints which extend from the first end points and over the reflection layer and are connected with the light-emitting chips in the second openings. Therefore, the reflection layer can be extended to edges of the light-emitting chips so that area of the reflection layer is maximized and light-emitting efficiency of the light-emitting module is improved.

Description

Light emitting module
Technical field
The present invention relates to a kind of light emitting module, espespecially a kind of luminescence chip is directly installed on light emitting module on the circuit board.
Background technology
Light-emitting diode (LED) has energy-conservation advantage, no matter use in the various illuminations of indoor or outdoors, light-emitting diode just little by little replaces conventional bulb or fluorescent lamp and becomes the New Generation Optical source.Owing to the luminous intensity that single light-emitting diode can provide is limited, usually many light-emitting diodes can be installed together to consist of a light emitting module, need to provide enough luminous intensities to look the specific occasion.
Traditional light-emitting diode can be installed in luminescence chip on the insulating base usually; and utilize encapsulating material coordinated insulation pedestal that luminescence chip is sealed; the metal lead wire that provides by lead frame again makes luminescence chip be able to be electrically connected to emit beam with extraneous power supply.Traditional light emitting module is that many packaged light-emitting diodes are installed on the circuit board jointly, and the metal lead wire of each light-emitting diode is electrically connected to respectively on the conducting wire of circuit board.
In order to simplify, Figure 1 shows that the disclosed light emitting module of US Patent No. 2007/0290307 application case, it adopts chip direct package (chip on board, COB) technology, and the luminescence chip 11 of un-encapsulated is directly installed on the circuit board 12.Circuit board 12 has a metal substrate 121, is positioned at the insulating barrier 122 on the metal substrate 121, and is positioned at the conducting wire layer 123 on the insulating barrier 122.Because luminescence chip 11 is directly installed on the metal substrate 121, the heat that sends in the time of can helping 11 operation of dissipation luminescence chip by the thermal conductivity of metal substrate 121.Two electrodes of luminescence chip 11 are electrically connected to conducting wire layer 123 with metal wire 15 respectively, are electrically connected to supply luminescence chip 11 required power supply with extraneous power supply by conducting wire layer 123.
In order to improve the luminous efficiency of light emitting module, be formed with a reflector 13 at conducting wire layer 132, the light court that helps luminescence chip 11 to send reflects away from the circuit board direction.And, utilize an encapsulating material 14 that luminescence chip 11 is encapsulated.Such light emitting module obviously has the advantage of simplified structure and making compared to traditional light emitting module.
Yet, because luminescence chip 11 need utilize metal wire 15 to form with conducting wire layer 123 and be electrically connected, conducting wire layer 123 must be exposed to outside the reflector 13 in the end 124 of its contiguous luminescence chip 11, for metal wire 15 this end 124 is electrically connected to forming between the luminescence chip 11, so that therefore interval one specific range L at least of luminescence chip 11 and reflector 13, that is reflector 13 can't extend to this luminescence chip 11 edges further, the light that part luminescence chip 11 sends can't be with the reflector 13 to external reflectance, thereby lowered the whole lighting efficiency of light emitting module.
Summary of the invention
The object of the present invention is to provide a kind of area maximization that makes the reflector, to improve light to the light emitting module of the ratio of external reflectance.
For reaching above-mentioned purpose, light emitting module of the present invention comprises a circuit board, a reflector, at least one luminescence chip and at least one metal wire.Circuit board has at least one connection pad.The reflector is positioned on this circuit board and has the second opening of this circuit board of at least one the first opening that exposes this connection pad and at least one exposed portions serve.Luminescence chip is positioned at this second opening.Metal wire has one first end points that connects this connection pad via this first opening, and extends across the second end points that this top, reflector also is electrically connected this luminescence chip that is positioned at this second opening by this first end points.
In addition, another light emitting module provided by the invention comprises a circuit board, a reflector and at least one luminescence chip.Circuit board has at least one connection pad.The reflector is positioned on this circuit board, and has at least one the first opening that exposes this connection pad.Luminescence chip is positioned at this first opening.This luminescence chip has at least one electrode that is positioned at its lower surface and directly connects this connection pad downwards.
The present invention can extend to the luminescence chip edge with the reflector by this, with the area in maximization reflector, improves light to the ratio of external reflectance, increases the whole lighting efficiency of light emitting module.
Description of drawings
Fig. 1 is a cutaway view of existing light emitting module;
Fig. 2 is the cutaway view of the first embodiment of light emitting module of the present invention;
Fig. 3 is the vertical view of the first embodiment of light emitting module of the present invention;
Fig. 4 is the stereogram of the first embodiment of light emitting module of the present invention;
Fig. 5 is the cutaway view of the second embodiment of light emitting module of the present invention;
Fig. 6 A is the cutaway view of the 3rd embodiment of light emitting module of the present invention;
Fig. 6 B is the cutaway view of the light emitting module similar to the 3rd embodiment;
Fig. 7 A is the cutaway view of the 4th embodiment of light emitting module of the present invention;
Fig. 7 B is the cutaway view of the light emitting module similar to the 4th embodiment;
Fig. 8 is the cutaway view of the 5th embodiment of light emitting module of the present invention; And
Fig. 9 is the vertical view of the 5th embodiment of light emitting module of the present invention.
Wherein, description of reference numerals is as follows:
Luminescence chip 11
Circuit board 12
Metal substrate 121
Insulating barrier 122
Conducting wire layer 123
End 124
Reflector 13
Encapsulating material 14
Metal wire 15
Specific range L
Circuit board 21
Metal substrate 211
Insulating barrier 212
Circuit layer 213
Connection pad 214
Circuit layer 215
Reflector 22
The first opening 221
The second opening 222
Luminescence chip 23
Electrode 231
Metal wire 24
The first end points 241
The second end points 242
Circular protrusion structure 25
Protective layer 26
Heat dissipating layer 213
The first preset distance L1
The second preset distance L2
The 3rd preset distance L3
Circuit board 31
Ceramic substrate 311
Circuit layer 313 connection pads 314
Reflector 32
Luminescence chip 33
Electrode 331
Embodiment
Relevant the technical content and a detailed description cooperate description of drawings as follows.
The light emitting module according to the first embodiment of the present invention as shown in Figure 2.This light emitting module consists predominantly of a circuit board 21, a reflector 22, a plurality of luminescence chip 23, and a plurality of metal wire 24.
In the present embodiment, circuit board 21 comprises the good metal substrate of a thermal conductivity 211, is positioned at the insulating barrier 212 on this metal substrate 211 and is positioned at a circuit layer 213 on this insulating barrier 212.Circuit layer 213 comprises at least one connection pad 214.Material or alloy that metal substrate 211 can be aluminium, copper or other tool high heat-conduction coefficient form.
Reflector 22 is positioned on the circuit board 21, and has at least one the first opening 221 that exposes the connection pad 214 of this circuit layer 213.In addition, reflector 22 also has the second opening 222 of the circuit board 21 of at least one exposed portions serve.Reflector 22 can be white or the high reflectance material is made, and for example silica gel mixing TiO 2 particles makes its reflectivity greater than 60%, especially greater than 80%.
Luminescence chip 23 is positioned at this second opening 222 and directly is connected on the metal substrate 211 of circuit board 21.In the present embodiment, two electrodes of luminescence chip 23 all are located thereon the surface, therefore metal wire 24 is the upper surfaces that are connected to luminescence chip 23.Luminescence chip 23 can be light-emitting diode chip for backlight unit or laser diode chip.
Metal wire 24 adopts routing to engage (wire bonding) mode and forms, and comes the circuit layer 213 of luminescence chip 23 and circuit board 21 is electrically connected in the mode that strides across these 22 tops, reflector.Specifically, metal wire 24 has one first opposite end points 241 and the second end points 242.The first end points 241 connects connection pad 214 via the first opening 221.242 of the second end points extend across 22 tops, reflector by the first end points 241 and also are electrically connected this luminescence chip 23 that is positioned at this second opening 222.
In addition, light emitting module also comprises a circular protrusion structure 25 that is positioned on this reflector 22.In the present embodiment, circular protrusion structure 25 is after reflector 22 forms, and is formed on the reflector 22 again.During actual fabrication, also can be in making step, utilize same material the be made into one reflector 22 and circular protrusion structure 25 of moulding.Utilize circular protrusion structure 25 as the border, the protective layer 26 of formation one transparent material that light emitting module can be above luminescence chip 23 is in order to protect luminescence chip 23 and metal wire 24.The material of protective layer 26 can be silica gel, epoxy resin or epoxy resin composition etc.
And, more can in the transparent material of protective layer 26, add fluorescent material, make protective layer 26 become a wavelength conversion layer, the wavelength of the light that sends in order to conversion luminescence chip 23.Fluorescent material can be yttrium-aluminium-garnet (YAG) class fluorescent material, silicate (Silicate) class fluorescent material, nitride-based fluorescent material, oxide-based fluorescent material, aluminum oxide class fluorescent material etc.
Fig. 3 is a vertical view of the light emitting module of the first embodiment.As shown in the figure, circular protrusion structure 25 roughly is a circle, and is surrounded on the first all openings 221 and the periphery of the second opening 222.That the section of circular protrusion structure 25 can be is cylindrical, half-cylindrical, class is cylindrical, triangle, class triangle, trapezoidal, class is trapezoidal, square, class is square or other closed cross-section consists of.
In other words, circular protrusion structure 25 is around all luminescence chips 23 and metal wire 24.In order to make reflector 22 area coverages maximization, the shape of the second opening 222 is designed to consistent with the shape of luminescence chip 23.In the present embodiment, light emitting module comprises quantity corresponding a plurality of the second openings 222 and a plurality of luminescence chip 23, and described a plurality of luminescence chip 23 is spaced with matrix-style, and wantonly two adjacent luminescence chip 23 intervals one first preset distance L1, during actual fabrication, the first preset distance L1 is more than or equal to 0.5mm, especially more than or equal to 0.6mm.In addition, this reflector 22 and arbitrary luminescence chip 23 intervals, one second preset distance L2, during actual fabrication, the second preset distance L2 is less than or equal to 0.5mm, especially less than or equal to 0.1mm.The first end points 241 intervals 1 the 3rd preset distance L3 of this reflector 22 and this metal wire 24 that is connected this connection pad 214, during actual fabrication, the 3rd preset distance L3 is less than or equal to 0.5mm, especially less than or equal to 0.1mm.Fig. 4 is the schematic perspective view of finished product of the light emitting module of the first embodiment.
By this, come the circuit layer 213 of luminescence chip 23 and circuit board 21 is electrically connected in the mode that strides across these 22 tops, reflector owing to metal wire 24.Metal wire 24 can not keep off between luminescence chip 23 and reflector 22, therefore can as best one can reflector 22 be extended to these luminescence chip 23 edges, maximize by this area in reflector 22, can improve light that luminescence chip 23 sends to the ratio of external reflectance, increase the whole lighting efficiency of light emitting module.With reference to shown in Figure 3, the end area occupied of deduction luminescence chip 23 and metal wire 24 not very is not reflected the ratio that layer 22 area coverage account for area that circular protrusion structure 25 is enclosed, or claims aperture opening ratio, should be less than or equal to 20%, especially less than or equal to 10%.
The light emitting module according to the second embodiment of the present invention as shown in Figure 5.The second embodiment is roughly identical with the first embodiment, and difference is that the present embodiment also comprises a heat dissipating layer 213 between circuit board 21 and this luminescence chip 23.Or rather, be between the metal substrate 211 of circuit board 21 and luminescence chip 23, this heat dissipating layer 213 to be set.This heat dissipating layer 213 is made and have a good heat-conducting effect for the insulation material.By this, can avoid luminescence chip 23 directly to contact with metal substrate 211, be subjected to the possibility of high electrical breakdown to reduce luminescence chip 23.Perhaps, this heat dissipating layer 213 also can be made for identical material with the circuit layer 213 of circuit board 21, improves by this radiating effect, and promotes the electric light conversion performance of luminescence chip 23.
The light emitting module according to the third embodiment of the present invention as shown in Figure 6A.The 3rd embodiment is roughly identical with the first embodiment, and difference is that the circuit board of the present embodiment adopts the substrate of ceramic material.Specifically, this circuit board 31 comprises a ceramic substrate 311 and is positioned on this ceramic substrate 311 and comprises a circuit layer 313 of this connection pad 214.By this, because good thermal conductivity and insulating properties that ceramic substrate 311 has also can effectively reduce the possibility that luminescence chip 23 is subjected to high electrical breakdown.
Light emitting module shown in Fig. 6 B is similar to the 3rd embodiment of Fig. 6 A, difference is that the connection pad 214 of both sides also extends respectively below reflector 22, and cover the below All Ranges that the first opening 221 exposes, cover as much as possible by this relatively poor ceramic substrate of reflectivity 311, to improve the whole lighting efficiency of light emitting module.
The light emitting module according to the fourth embodiment of the present invention shown in Fig. 7 A.The 4th embodiment is roughly identical with the first embodiment, and difference is that two electrodes of the luminescence chip 23 of the present embodiment lay respectively at its opposite upper surface and lower surface.Therefore, the electrode of the upper surface of luminescence chip 23 is identical with the first embodiment with the connected mode of circuit layer 213, is to utilize metal wire 24 to connect.231 at the electrode of the lower surface of luminescence chip 23 is that another that directly be connected in circuit board 21 downwards is positioned on the circuit layer 215 of below, reflector.
Light emitting module shown in Fig. 7 B is similar to the 4th embodiment of Fig. 7 A, and difference is that reflector 22 and circular protrusion structure 25 are to utilize the made integrated formed structure of identical material, so more can save making step and required cost.
The light emitting module according to the fifth embodiment of the present invention as shown in Figure 8.The 5th embodiment is roughly identical with the first embodiment, and difference is that two electrodes 331 of the luminescence chip 23 of the present embodiment all are positioned on its lower surface.Specifically, circuit board 31 has two connection pads 314.Reflector 32 is positioned on this circuit board 31 and has at least one the first opening 222 that exposes described connection pad 314.Luminescence chip 23 is positioned at this first opening 222, and this luminescence chip 23 has two electrodes 331 that are positioned at its lower surface and directly connect respectively described connection pad 314 downwards.Fig. 9 is a schematic diagram of the present embodiment, and the connected mode of passing through circuit layer 313 between a plurality of luminescence chips 23 is described.
By this, luminescence chip 23 and being connected further of circuit layer 313 are simplified, metal wire that need not be extra, therefore can as best one can reflector 32 be extended to these luminescence chip 23 edges, maximize by this area in reflector 32, can improve light that luminescence chip 23 sends to the ratio of external reflectance, increase the whole lighting efficiency of light emitting module.
The above is preferred embodiment of the present invention only, is not to limit practical range of the present invention.All equivalences of doing according to claims of the present invention change and modify, and all still belong within the patent of the present invention institute covering scope.

Claims (24)

1. light emitting module comprises:
One circuit board has at least one connection pad;
One reflector is positioned on this circuit board, and has the second opening of this circuit board of at least one the first opening that exposes this connection pad and at least one exposed portions serve;
At least one luminescence chip is positioned at this second opening; And
At least one metal wire has one first end points that connects this connection pad via this first opening, and extends across the second end points that this top, reflector also is electrically connected this luminescence chip that is positioned at this second opening by this first end points.
2. light emitting module as claimed in claim 1, wherein this circuit board has a metal substrate, is positioned at the insulating barrier on this metal substrate and is positioned on this insulating barrier and comprises a circuit layer of this connection pad.
3. light emitting module as claimed in claim 1, wherein this circuit board comprises a ceramic substrate and is positioned on this ceramic substrate and comprises a circuit layer of this connection pad.
4. light emitting module as claimed in claim 1, wherein this light emitting module also comprises a heat dissipating layer between this circuit board and this luminescence chip.
5. light emitting module as claimed in claim 1, wherein the shape of this second opening is consistent with the shape of this luminescence chip.
6. light emitting module as claimed in claim 1, wherein this light emitting module comprises quantity corresponding a plurality of the second openings and a plurality of luminescence chip, and described a plurality of luminescence chips are arranged with matrix-style, and wantonly two adjacent luminescence chip interval one first preset distances.
7. light emitting module as claimed in claim 1, wherein this reflector and arbitrary luminescence chip interval one second preset distance.
8. light emitting module as claimed in claim 1, wherein the first end points interval 1 the 3rd preset distance of this reflector and this metal wire that is connected this connection pad.
9. light emitting module as claimed in claim 1, wherein this light emitting module also comprises one and is positioned on this reflector and around the circular protrusion structure of this first opening and this second opening.
10. light emitting module as claimed in claim 9, wherein this circular protrusion structure and this reflector are formed in one.
11. light emitting module as claimed in claim 1, wherein this light emitting module also comprises a wavelength conversion layer that is positioned at this luminescence chip top.
12. light emitting module as claimed in claim 1, wherein this light emitting module also comprises a protective layer that is positioned at this luminescence chip top.
13. a light emitting module comprises:
One circuit board has at least one connection pad;
One reflector is positioned on this circuit board and has at least one the first opening that exposes this connection pad; And
At least one luminescence chip is positioned at this first opening, and this luminescence chip has at least one electrode that is positioned at its lower surface and directly connects this connection pad downwards.
14. light emitting module as claimed in claim 13, wherein this circuit board has a metal substrate, is positioned at the insulating barrier on this metal substrate and is positioned on this insulating barrier and comprises a circuit layer of this connection pad.
15. light emitting module as claimed in claim 13, wherein this circuit board comprises a ceramic substrate and is positioned on this ceramic substrate and comprises a circuit layer of this connection pad.
16. light emitting module as claimed in claim 13, wherein this light emitting module also comprises a heat dissipating layer between this circuit board and this luminescence chip.
17. light emitting module as claimed in claim 13, wherein the shape of this first opening is consistent with the shape of this luminescence chip.
18. light emitting module as claimed in claim 13, wherein this first opening exposes two connection pads, and this luminescence chip has two and is positioned at its lower surface and directly connects respectively the electrode of described connection pad downwards.
19. light emitting module as claimed in claim 13, wherein this light emitting module comprises quantity corresponding a plurality of the first openings and a plurality of luminescence chip, and described a plurality of luminescence chips are arranged with matrix-style, and wantonly two adjacent luminescence chip interval one first preset distances.
20. light emitting module as claimed in claim 13, wherein this reflector and arbitrary luminescence chip interval one second preset distance.
21. light emitting module as claimed in claim 13, wherein this light emitting module also comprises one and is positioned on this reflector and around the circular protrusion structure of this first opening.
22. light emitting module as claimed in claim 21, wherein this circular protrusion structure and this reflector are formed in one.
23. light emitting module as claimed in claim 13, wherein this light emitting module also comprises a wavelength conversion layer that is positioned at this luminescence chip top.
24. light emitting module as claimed in claim 13, wherein this light emitting module also comprises a protective layer that is positioned at this luminescence chip top.
CN2012101019400A 2012-04-09 2012-04-09 Light-emitting module Pending CN103367343A (en)

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CN104465950A (en) * 2014-12-02 2015-03-25 深圳市华星光电技术有限公司 Light-emitting diode and manufacturing method of light-emitting diode
CN105226173A (en) * 2015-10-15 2016-01-06 广州市雷腾照明科技有限公司 A kind of COB encapsulating structure and method for packing
CN110335934A (en) * 2019-07-16 2019-10-15 宁波升谱光电股份有限公司 A kind of COB light source and preparation method thereof

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US20060245188A1 (en) * 2005-04-28 2006-11-02 Sharp Kabushiki Kaisha Semiconductor light emitting device
CN101834174A (en) * 2005-01-21 2010-09-15 发光装置公司 The LED package design
US20110220939A1 (en) * 2010-03-12 2011-09-15 Asahi Glass Company, Limited Light-emitting device

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CN101834174A (en) * 2005-01-21 2010-09-15 发光装置公司 The LED package design
US20060245188A1 (en) * 2005-04-28 2006-11-02 Sharp Kabushiki Kaisha Semiconductor light emitting device
US20110220939A1 (en) * 2010-03-12 2011-09-15 Asahi Glass Company, Limited Light-emitting device

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CN104465950A (en) * 2014-12-02 2015-03-25 深圳市华星光电技术有限公司 Light-emitting diode and manufacturing method of light-emitting diode
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Application publication date: 20131023