CN103519807A - Brain electricity collecting device - Google Patents

Brain electricity collecting device Download PDF

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Publication number
CN103519807A
CN103519807A CN201310513699.7A CN201310513699A CN103519807A CN 103519807 A CN103519807 A CN 103519807A CN 201310513699 A CN201310513699 A CN 201310513699A CN 103519807 A CN103519807 A CN 103519807A
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passage
signal
brain wave
wave acquisition
brain
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CN103519807B (en
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郜东瑞
刘铁军
尧德中
刘志煊
曾昭龙
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University of Electronic Science and Technology of China
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University of Electronic Science and Technology of China
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Abstract

The invention discloses a brain electricity collecting device which particularly comprises an N-channel brain electricity collecting electrode, a brain electricity signal collector, a transmission module and a data receiving module. Brain electricity signals acquired by the N-channel brain electricity collecting electrode are fed into a high-impedance front buffer stage and then are converted into digital signals by a high-precision brain electricity collecting and converting module, the digital signals are transmitted into a digital signal processor, and processed signals are transmitted to the data receiving module according to particular requirements. The brain electricity collecting device has the advantages that the brain electricity collecting device is particularly provided with a 24-bit high-precision analog-digital conversion chip to directly acquire signals of relevant positions of the brain of a person, and digital signals converted by corresponding channels are subtracted from the signals, so that common-mode interference, device noise and other relevant background noise can be eliminated, and basically pure brain electricity signals can be obtained.

Description

Brain wave acquisition device
Technical field
The invention belongs to field of biomedicine technology, be specifically related to a kind of design of brain wave acquisition device.
Background technology
Eeg amplifier is a kind of harvester that obtains brain signal by noinvasive mode, but because EEG signals is submerged in environment noise, and while adopting analog circuit to remove noise, analog circuit is often because the restriction of offset voltage etc. cannot improve common mode rejection ratio, and the increase of analog device also can increase device noise, so the signal that conventional eeg amplifier collects not only frequency band range is restricted, and the signal collecting also can comprise some noise jamming, not only strengthened the difficulty of subsequent treatment but also can affect the progress of medical treatment and scientific research.
Although disclosed brain wave acquisition device can gather EEG signals in CN201220428883.2, CN201120111758.4 and CN201210308665.X, but they all adopt traditional signal condition module to realize the separation collection of signal as preamplifier, simulation wave trap etc., this set is difficult to recently obtain high-precision EEG signals with very high common mode inhibition, not only common mode inhibition is lower for they, and increasing of analog device not only increase the volume of circuit and cost, the noise of device itself also can have influence on the quality of EEG signals simultaneously.
Summary of the invention
Object of the present invention is easily subject to noise jamming for existing brain wave acquisition device exactly, cannot obtain the problem of high accuracy EEG signals, proposes a kind of high-precision eeg signal acquisition device.
Technical scheme of the present invention is: a kind of brain wave acquisition device, specifically comprise: N passage brain wave acquisition electrode, eeg signal acquisition device, transport module and data reception module, wherein, described eeg signal acquisition device comprises the high impedance front buffer level of a N passage, the high impedance front buffer level of the 2nd N passage, the high accuracy brain wave acquisition modular converter of the one N passage, high accuracy brain wave acquisition modular converter and the digital signal processor of the 2nd N passage, N passage brain wave acquisition electrode is connected with the in-phase input end of the high impedance front buffer level of a N passage respectively, corresponding with N passage brain wave acquisition electrode N brain electricity reference signal is connected with the in-phase input end of the high impedance front buffer level of the 2nd N passage respectively, the outfan of the high impedance front buffer level of the one N passage is connected with the input of the high accuracy brain wave acquisition modular converter of a N passage respectively, the high impedance front buffer level outfan of the 2nd N passage is connected with the input of the high accuracy brain wave acquisition modular converter of the 2nd N passage respectively, the outfan of the high accuracy brain wave acquisition modular converter of the one N passage and the high accuracy brain wave acquisition modular converter of the 2nd N passage is connected with two digital signal input ends of digital signal processor respectively, and the output signal of digital signal processor transfers to described data reception module by described transport module.
Beneficial effect of the present invention: brain wave acquisition device of the present invention adopts N passage brain wave acquisition electrode that the EEG signals getting is sent into high impedance front buffer level, then EEG signals is converted to digital signal through high accuracy brain wave acquisition modular converter, and be admitted to digital signal processor, more according to specific needs the signal after processing is transferred to data reception module.The concrete signal that uses 24 high-precision modulus conversion chips directly to obtain brain relevant position of the present invention, and will subtract each other with the digital signal of institute respective channel conversion, eliminated common mode disturbances, device noise and other relevant background noise, the signal obtaining is pure EEG signals substantially.
Accompanying drawing explanation
Fig. 1 is the structural representation of the brain wave acquisition device of the embodiment of the present invention;
Fig. 2 is the structural representation of eeg signal acquisition device in the present invention.
The specific embodiment
Below in conjunction with accompanying drawing, embodiments of the invention are described further.
Brain wave acquisition device of the present invention, specifically comprise: N passage brain wave acquisition electrode, eeg signal acquisition device, transport module and data reception module, wherein, described eeg signal acquisition device comprises the high impedance front buffer level of a N passage, the high impedance front buffer level of the 2nd N passage, the high accuracy brain wave acquisition modular converter of the one N passage, high accuracy brain wave acquisition modular converter and the digital signal processor of the 2nd N passage, N passage brain wave acquisition electrode is connected with the in-phase input end of the high impedance front buffer level of a N passage respectively, corresponding with N passage brain wave acquisition electrode N brain electricity reference signal is connected with the in-phase input end of the high impedance front buffer level of the 2nd N passage respectively, the outfan of the high impedance front buffer level of the one N passage is connected with the input of the high accuracy brain wave acquisition modular converter of a N passage respectively, the high impedance front buffer level outfan of the 2nd N passage is connected with the input of the high accuracy brain wave acquisition modular converter of the 2nd N passage respectively, the outfan of the high accuracy brain wave acquisition modular converter of the one N passage and the high accuracy brain wave acquisition modular converter of the 2nd N passage is connected with two digital signal input ends of digital signal processor respectively, and the output signal of digital signal processor transfers to described data reception module by described transport module.Concrete structure sketch as shown in Figure 1.
Brain wave acquisition device specific implementation process of the present invention is as follows: the N passage brain wave acquisition electrode 101 in Fig. 1 is sent the EEG signals getting into high impedance front buffer level 102, then EEG signals is converted to digital signal through high accuracy brain wave acquisition modular converter 103, and be admitted to digital signal processor 104, more according to specific needs eeg data is delivered in data reception module 107 by bluetooth module 105 or USB transport module 106.Wherein, the concrete high accuracy that adopts of high impedance front buffer level 102, low noise, the voltage follower that the amplifier chip of Low Drift Temperature forms as AD8639, high accuracy brain wave acquisition modular converter 103 is that N passage high precision analogue conversion chip is as AD7731, digital signal processor 104 act as to be controlled analog digital conversion and the digital signal in the modulus conversion chip reading is sent to transport module, the transport module is here specially bluetooth module 105 or USB transport module 106, the Bluetooth transmission module that bluetooth module 105 is standard, USB transport module 106 is standard USB2.0 transport module, data reception module 107 is host computer receiving system.
Fig. 2 is the specific implementation process of the eeg signal acquisition device of N passage: N channel electrode is sent into EEG signals the in-phase input end of high resistant front buffer level 201, reference signal is sent into the in-phase input end of high resistant front buffer level 202, and the voltage follower that then two paths of signals forms through high resistant front buffer level 201,202 divides the CH1 interface of the modulus conversion chip 203 being clipped to and the CH2 interface of modulus conversion chip 204.Digital signal processor 205(is the digital signal processor 104 in Fig. 1) IO mouth the pin CS2 of the pin CS1 of modulus conversion chip 203 and modulus conversion chip 204 is drawn and chooses respectively this chip for high level, then the IO mouth of digital signal processor 205 is write initialize routine to modulus conversion chip 203 and modulus conversion chip 204 respectively by DIN1 and DIN2, then the IO of digital signal processor 205 draws high the pin SYNC2 of the pin SYNC1 of modulus conversion chip 203 and modulus conversion chip 204 simultaneously, synchronous modulus conversion chip 203 and the modulus conversion chip 204 of starting, and the data after conversion are delivered to digital signal processor 205 by DOUT1 and DOUT2, in digital signal processor 205, the data of DOUT1 and DOUT2 are subtracted each other and just obtained pure EEG signals.
Specific implementation principle of the present invention is described as follows:
For maximum noise decrease, obtain high-quality EEG signals, the present invention uses 24 high-precision modulus conversion chips directly to obtain the signal of brain relevant position, and will subtract each other with the digital signal of institute respective channel conversion, thereby obtains pure EEG signals.
The signal S1 that supposes the input channel CH1 of the first modulus conversion chip 203 in Fig. 2 is the signal of brain collection point N, and it specifically comprises: EEG signals S d1, common-mode signal V cm1, device noise V ch1and other background noise V n1, the signal S2 of the input channel CH2 of second modulus conversion chip 204 corresponding with the signal S1 of input channel CH1 is the signal of brain reference point, specifically comprises: EEG signals S d2, common-mode signal V cm2, device noise V ch2and other background noise V n2, the output signal of digital signal processor be specially that two channel digital signals subtract each other to signal S be:
S=S1-S2
=(S d1+V cm1+V ch1+V N1)-(S d2+V cm2+V ch2+V N2) (1)
=(S d1-S d1)+(V cm1-V cm2)+(V ch1-V ch2)+(V N1-V N2)
Because 24 high precision analogue conversion chips selected in the embodiment of the present invention are same chips, therefore the performance of two chips is substantially identical, so the noise signal comprising in modulus conversion chip 203 and modulus conversion chip 204 is basic identical, that is:
V cm1≈V cm2,V ch1≈V ch2,V N1≈V N2(2)
So signal S obtaining:
S=S1-S2
(3)
≈(S d1-S d1)
From formula (3), can draw: the signal that brain wave acquisition device of the present invention gathers has been eliminated common mode disturbances, device noise and other relevant background noise, the signal obtaining is pure EEG signals substantially; In addition in harvester of the present invention, do not comprise high pass filter, but directly adopt 24 analog-digital converters of high accuracy to adopt EEG signals, therefore the signal collecting compares with conventional eeg amplifier the signal that has comprised 0-0.5HZ, and according to the nyquist sampling theorem of formula (4), the different sample frequency f of analog-digital converter is set s.max, can obtain the EEG signals of the above different bandwidth of 0HZ, thus the harvester of the present embodiment not only guaranteed the quality of very high EEG signals but also obtained complete EEG signals, for the correlational studyes such as medical treatment and brain cognition provide abundanter data.
f s.max≥2f max (4)
Wherein, f s.maxfor the sample frequency of analog-digital converter, f shighest frequency for collected signal.
It is as follows that the present invention adopts above technical scheme to have advantages of:
1. adopt brain wave acquisition device of the present invention can obtain the common mode rejection ratio (> 120dB of infinite height), compare with conventional brain wave acquisition device, the present invention has improved common mode rejection ratio on the basis of equipment volume reducing cost of equipment and reduce, and the EEG signals quality of acquisition is higher.Specifically be calculated as: the calculating standard proposing with reference to country draws (The people ' s Republic of China National Metrology Verification Regulation, JJG954,2000), and common mode rejection ratio computing formula is:
CMMR = 20 lgK + 20 lg U d U c - - - ( 5 )
Wherein, Ud has represented the amplitude of difference mode signal, and Uc has represented the maximum amplitude of the common-mode signal of outfan after operational amplifier input common-mode signal, and K has represented the ratio of common mode input signal and differential input signal.
For brain wave acquisition device of the present invention, input respectively the common-mode signal of 1Vpp and the difference mode signal of 1Vpp, the Uc<1 μ V obtaining, therefore the common mode rejection ratio CMMR of brain wave acquisition device of the present invention>120dB.
2. the present invention can arrange the different sample frequency of analog-digital converter according to the Nyquist sampling frequency of formula (5), thereby obtains the signal of different bandwidth more than 0Hz;
3. the overall performance of circuit is reliable, and capacity of resisting disturbance is strong, simple in structure, not only can high-precision acquisition EEG signals and also cost lower, can be applied to widely the fields such as medical treatment, domestic monitoring.
Those of ordinary skill in the art will appreciate that, embodiment described here is in order to help reader understanding's principle of the present invention, should be understood to that protection scope of the present invention is not limited to such special statement and embodiment.Those of ordinary skill in the art can make various other various concrete distortion and combinations that do not depart from essence of the present invention according to these technology enlightenments disclosed by the invention, and these distortion and combination are still in protection scope of the present invention.

Claims (4)

1. a brain wave acquisition device, specifically comprise: N passage brain wave acquisition electrode, eeg signal acquisition device, transport module and data reception module, wherein, described eeg signal acquisition device comprises the high impedance front buffer level of a N passage, the high impedance front buffer level of the 2nd N passage, the high accuracy brain wave acquisition modular converter of the one N passage, high accuracy brain wave acquisition modular converter and the digital signal processor of the 2nd N passage, N passage brain wave acquisition electrode is connected with the in-phase input end of the high impedance front buffer level of a N passage respectively, corresponding with N passage brain wave acquisition electrode N brain electricity reference signal is connected with the in-phase input end of the high impedance front buffer level of the 2nd N passage respectively, the outfan of the high impedance front buffer level of the one N passage is connected with the input of the high accuracy brain wave acquisition modular converter of a N passage respectively, the high impedance front buffer level outfan of the 2nd N passage is connected with the input of the high accuracy brain wave acquisition modular converter of the 2nd N passage respectively, the outfan of the high accuracy brain wave acquisition modular converter of the one N passage and the high accuracy brain wave acquisition modular converter of the 2nd N passage is connected with two digital signal input ends of digital signal processor respectively, and the output signal of digital signal processor transfers to described data reception module by described transport module.
2. brain wave acquisition device according to claim 1, is characterized in that, described transport module is specially bluetooth module or USB transport module.
3. brain wave acquisition device according to claim 1 and 2, is characterized in that, described high accuracy brain wave acquisition modular converter is specifically realized by modulus conversion chip AD7731.
4. brain wave acquisition device according to claim 3, is characterized in that, the signal S1 of the input channel CH1 of described the first modulus conversion chip is the signal of brain collection point N, specifically comprises: EEG signals S d1, common-mode signal V cm1, device noise V ch1and other background noise V n1, the signal S2 of the input channel CH2 of second modulus conversion chip corresponding with the signal S1 of input channel CH1 is the signal of brain reference point, specifically comprises: EEG signals S d2, common-mode signal V cm2, device noise V ch2and other background noise V n2, the output signal of digital signal processor is specially the signal S arriving that two channel digital signals are subtracted each other:
S=S1-S2
=(S d1+V cm1+V ch1+V N1)-(S d2+V cm2+V ch2+V N2)
=(S d1-S d1)+(V cm1-V cm2)+(V ch1-V ch2)+(V N1-V N2)
Because the first modulus conversion chip and the second modulus conversion chip are same chips, therefore the performance of two chips is substantially identical, so the noise signal comprising in the first modulus conversion chip and the second modulus conversion chip is basic identical, that is:
V cm1≈V cm2,V ch1≈V ch2,V N1≈V N2
The signal S obtaining:
S=S1-S2
≈(S d1-S d1) 。
CN201310513699.7A 2013-10-28 2013-10-28 Brain electricity collecting device Active CN103519807B (en)

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Cited By (8)

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CN103961094A (en) * 2014-05-23 2014-08-06 电子科技大学 Multifunctional electroencephalogram collector for achieving Laplace technology on basis of hardware
CN104013400A (en) * 2014-05-30 2014-09-03 西安交通大学 High-precision low-power-consumption multi-channel brain deep electroneurographic signal wireless collecting system
CN106236082A (en) * 2016-09-06 2016-12-21 华南理工大学 A kind of low noise eeg signal acquisition system
CN106725459A (en) * 2017-01-05 2017-05-31 电子科技大学 Eeg signal acquisition system
CN108742591A (en) * 2018-07-25 2018-11-06 电子科技大学 A kind of physiology signal harvester with adaptive industrial frequency noise squelch
WO2019000088A1 (en) * 2017-06-26 2019-01-03 The University Of British Columbia Electroencephalography device and device for monitoring a subject using near infrared spectroscopy
CN113397552A (en) * 2021-05-12 2021-09-17 肇庆美兰特科技有限公司 Novel electroencephalogram signal acquisition method and system
CN115034273A (en) * 2021-12-27 2022-09-09 驻马店市中心医院 Myoelectricity biofeedback equipment and system based on pattern recognition

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CN101032397A (en) * 2007-04-05 2007-09-12 上海交通大学 Portable wireless communication multichannel brain electric data collecting instrument
CN101076281A (en) * 2004-06-10 2007-11-21 荷兰联合利华有限公司 Apparatus and method for reducing interference
CN102783947A (en) * 2012-08-27 2012-11-21 北京理工大学 Parallel-connection expansion multi-channel electroencephalogram collecting device

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US20030073917A1 (en) * 2001-10-12 2003-04-17 Neuropace, Inc. Patient-specific parameter selection for neurological event detection
CN101076281A (en) * 2004-06-10 2007-11-21 荷兰联合利华有限公司 Apparatus and method for reducing interference
CN101032397A (en) * 2007-04-05 2007-09-12 上海交通大学 Portable wireless communication multichannel brain electric data collecting instrument
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Cited By (13)

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Publication number Priority date Publication date Assignee Title
CN103961094A (en) * 2014-05-23 2014-08-06 电子科技大学 Multifunctional electroencephalogram collector for achieving Laplace technology on basis of hardware
CN103961094B (en) * 2014-05-23 2016-04-06 电子科技大学 Based on the multi-functional electroencephalogramdata data collector of hardware implementing Laplce technology
CN104013400A (en) * 2014-05-30 2014-09-03 西安交通大学 High-precision low-power-consumption multi-channel brain deep electroneurographic signal wireless collecting system
CN106236082B (en) * 2016-09-06 2023-04-28 华南理工大学 Low-noise electroencephalogram signal acquisition system
CN106236082A (en) * 2016-09-06 2016-12-21 华南理工大学 A kind of low noise eeg signal acquisition system
CN106725459A (en) * 2017-01-05 2017-05-31 电子科技大学 Eeg signal acquisition system
WO2019000088A1 (en) * 2017-06-26 2019-01-03 The University Of British Columbia Electroencephalography device and device for monitoring a subject using near infrared spectroscopy
CN108742591A (en) * 2018-07-25 2018-11-06 电子科技大学 A kind of physiology signal harvester with adaptive industrial frequency noise squelch
CN108742591B (en) * 2018-07-25 2023-11-17 电子科技大学 Human physiological signal acquisition device with self-adaptive power frequency noise suppression
CN113397552A (en) * 2021-05-12 2021-09-17 肇庆美兰特科技有限公司 Novel electroencephalogram signal acquisition method and system
CN113397552B (en) * 2021-05-12 2024-02-20 肇庆美兰特科技有限公司 Electroencephalogram signal acquisition method and system
CN115034273A (en) * 2021-12-27 2022-09-09 驻马店市中心医院 Myoelectricity biofeedback equipment and system based on pattern recognition
CN115034273B (en) * 2021-12-27 2023-09-01 驻马店市中心医院 Myoelectricity biofeedback equipment and system based on pattern recognition

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