CN103712601A - Liquid multilayer-capacitanc inclination microensor - Google Patents
Liquid multilayer-capacitanc inclination microensor Download PDFInfo
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- CN103712601A CN103712601A CN201210377904.7A CN201210377904A CN103712601A CN 103712601 A CN103712601 A CN 103712601A CN 201210377904 A CN201210377904 A CN 201210377904A CN 103712601 A CN103712601 A CN 103712601A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C9/00—Measuring inclination, e.g. by clinometers, by levels
- G01C9/18—Measuring inclination, e.g. by clinometers, by levels by using liquids
- G01C9/20—Measuring inclination, e.g. by clinometers, by levels by using liquids the indication being based on the inclination of the surface of a liquid relative to its container
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0221—Variable capacitors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C9/00—Measuring inclination, e.g. by clinometers, by levels
- G01C9/02—Details
- G01C9/06—Electric or photoelectric indication or reading means
- G01C2009/062—Electric or photoelectric indication or reading means capacitive
Abstract
The invention discloses a liquid multilayer-capacitanc inclination microsensor, which comprises a pair of differential electrodes, the differential electrodes are positioned on a same plane; a shared electrode, a part of the shared electrode and the differential electrodes are positioned on the same plane, wherein the differential electrode and the shared electrode are positioned in the enclosed space; and the cover liquid used for sealing the enclosed space, wherein the contours of the differential electrodes respectively form a part of a circle. The sensor also comprises a sensing electrode. The invention also discloses a manufacture method for the sensor.
Description
Technical field
The present invention relates to a kind of slant angle sensor, particularly about a kind of liquid multi-layer electric capacity inclination sensor.
Prior art
Having wide range of applications of level meter (slant angle sensor), for example build the construction location of engineering, the horizontal degree measurement of mechanical platform, the monitoring of automobile and aircraft balanced system, the inclination of bridge and railway and deformation monitoring, auxiliary water horizontal line when camera is found a view, the inclination manipulation application of mobile phone etc., even in semiconductor, chemistry and raw medical professionals's journey etc., all visible its application.Current visible micro-level meter, its sensing mode of complying with mainly can be divided into the sensing mode of mechanical type, gas type and liquid-type.
Mechanical type level meter is mainly to utilize a mass, and when level meter tilts, this mass is affected by gravity, and between the electrode that makes mass two ends and corresponding fixed electorde, changes, and causes the capacitance variations between mass electrode and two ends fixed electorde.Mechanical type level meter is to judge angle of inclination by measuring this electric capacity.Adopt mechanical structure comparatively easily to realize in technique, but because its spring structure is conventionally comparatively fragile, easily because of external force, rupture.
Gas type level meter arranges an annular seal space that is marked with reference gas, uses well heater by its gas-heated around.When tilting, the thermal convection in enclosed cavity changes, and the resistance change of the thermistor by HEATER FOR MEASURING surrounding, can calculate angle of inclination.Micro-level construction of gas type is comparatively simple, be subject to the impact of microstructure size variation also less, but on manufacturing, still must additionally increase the procedure of processing together cavity being sealed, and its reaction velocity for change of pitch angle is also comparatively slow.
The existing liquid level meter that declines is to inject electrolytic solution in an enclosed cavity, and this electrolytic solution has electric conductivity.When cavity does not tilt, the two electrode resistance value essence that are immersed in electrolytic solution are identical.But when cavity tilts, the area that two end electrodes is immersed in electrolytic solution changes, make the resistance value of two electrodes produce difference.By reading circuit, changing this change of pitch angle into electric signal exports.The structure of liquid sensing mode is the simplest, and the reaction time is also very fast, but must increase equally the procedure of processing of one seal chamber.
Micro-level meter is manufactured respectively sensing component and reading circuit with MEMS technique and CMOS technique mostly, and not only manufacturing cost is high, and volume is difficult to further reduce, and also easily produces noise.Although independent MEMS technique is higher in the design flexibility degree of freedom of microstructure, does not still have at present standard set MEMS (micro electro mechanical system) can meet design flexibility simultaneously and can carry out integrated with circuit again.
TaiWan, China patent TW522221 discloses a kind of inclination sensor, and this sensor has printed base plate and is arranged on the electric independently pair of differential electrode each other on this printed base plate, and with the common electrode plate at differential electrode interval.This is accommodated in a confined space differential electrode and common electrode plate, and encloses dielectricity liquid in this confined space.When inclination sensor tilts, the dielectricity soaked with liquid respectively area of this differential electrode changes, and its electric capacity is produced and change.By measuring the capacitance of two differential electrodes, can calculate angle of inclination.This inclination sensor is not with micro-electromechanical technology manufacture, and volume is very huge.
Japanese Patent Publication JP2008-261695 discloses a kind of miniature gradient sensor.This sensor has and above-mentioned No. TW522221 identical structure, and uses identical principle, but the liquid of enclosing is conductive liquid.This sensor is manufactured with micro-electromechanical technology, and volume can dwindle, but its structure be not suitable for manufacturing with standard CMOS process improves manufacturing cost.And its differential electrode forms semicircle, make its sensing accuracy limited, be unsuitable for utilizing in more accurate application.In addition, this sensor and reading circuit must be manufactured respectively, integrated difficulty.
Summary of the invention
Object of the present invention is to provide a kind of novel framework of liquid capacitance-type inclination microsensor.
Object of the present invention is also to provide a kind of liquid capacitance-type inclination microsensor of detecting multi-direction rake angle.
Object of the present invention is also to provide a kind of liquid capacitance-type inclination microsensor with multipair differential electrode.
Object of the present invention is also to provide a kind of inclination microsensor that can utilize standard CMOS process to manufacture.
Object of the present invention is also to provide the inclination microsensor of the integrated reading circuit of a kind of energy and sensing component.
Object of the present invention is also to provide a kind of without mobile component, and can improve the inclination microsensor of detecting degree of accuracy.
Object of the present invention is also to provide a kind of novel process for preparing of liquid capacitance-type inclination microsensor.
Object of the present invention is also to provide a kind of inclination microsensor method for making that can utilize standard CMOS process manufacture and be integrated with reading circuit.
Object of the present invention is also to provide a kind of method for making of multidirectional inclination angle microsensor.
Object of the present invention is also to provide a kind of method for making of inclination microsensor of tool multilayer differential electrode.
According to liquid capacitance-type inclination microsensor of the present invention, it is characterized in that having: at least two pairs of differential electrodes, every pair of differential electrode is positioned on same level; At least one common electrode, a part for this common electrode and each is in the same plane to differential electrode; This differential electrode and this common electrode are arranged in a confined space; And the Covering Liguid of enclosing this confined space.The electrode profile of this multipair differential electrode respectively can the conglobate part of shape, is preferably fan-shaped.This multipair differential electrode can form at grade, also can be formed in Different Plane, mutually with a spacing separately.Not in the same plane if any two pairs of differential electrodes, this common electrode can be used one or more, for example, in each plane, provide community electrode.
This sensor also can comprise reading circuit, the capacitance producing in order to read each electrode of this differential electrode.And can provide the function that judges the angle of inclination on equidirectional or different directions.Surperficial at least a portion of the plurality of differential electrode and/or this common electrode also can comprise lubricating layer.This common electrode can be formed on this differential electrode around.This differential electrode can comprise respectively a plurality of breach that are formed on battery lead plate edge, and this common electrode can comprise a plurality of teats that stretch into this breach.When battery lead plate is scalloped profile, the plurality of breach may extend into the fan-shaped radius of each differential electrode plate half more than length.This Covering Liguid can be conductive liquid or dielectric fluid.The plurality of differential electrode and this common electrode can be formed on a silicon substrate.This reading circuit also can be formed on the silicon substrate of this differential electrode and this common electrode.This differential electrode and this common electrode can be formed on the dielectric layer on a silicon substrate.The profile of this multipair differential electrode and area can be identical or different.
Method according to manufacture liquid multi-layer electric capacity inclination microsensor of the present invention, comprises the steps:
Prepare first substrate;
On this first substrate, form a stack architecture that comprises a plurality of metal levels and a plurality of dielectric layers; In this stack architecture, comprise the pattern of at least two pairs of differential electrodes and at least one common electrode, it is characterized in that, the conglobate part of outline-shaped of described differential electrode, and arbitrary this differential electrode is had to the area that approximate shape is identical with essence;
At least two pairs of differential electrodes and at least one common electrode described in release;
Prepare second substrate;
On this second substrate, form material layer;
In this material layer, form groove;
In this groove, add Covering Liguid;
This first substrate is covered on this second substrate, this differential electrode and common electrode are entered in this groove; And
In conjunction with this first substrate and this second substrate.
This differential electrode profile is preferably fan-shaped.Different right differential electrodes can be positioned at the different layers of this stack architecture, and separated from one another.Different right differential electrodes, profile and area can be identical or different each other.
This first substrate can be silicon substrate, and this second substrate can be glass substrate or plastic base.This common electrode can be formed on corresponding differential electrode around.This differential electrode can comprise respectively a plurality of breach that are formed on battery lead plate edge, and this common electrode can comprise a plurality of teats that stretch into this breach.When this differential electrode plate is fan-shaped or semi-circular profile, the plurality of breach may extend into the fan-shaped of differential electrode plate or half radius of a circle half more than length.This Covering Liguid can be conductive liquid or dielectric fluid.
This differential electrode and common electrode can be formed on the material layer on this first substrate, so the method also can be included in and prepare after first substrate, form the step of a material layer on this first substrate.This material layer can comprise at least one dielectric layer.This material layer yet can comprise at least one metal level and a dielectric layer.
The method also can comprise: when forming this differential electrode with common electrode pattern, form the step of a reading circuit simultaneously.The method also can comprise: when forming this differential electrode with common electrode pattern and this material layer, form the step of a reading circuit simultaneously.The method also can comprise: after this differential electrode and common electrode release, apply the step of lubricating layer in its surperficial at least a portion.
The material layer forming on this second substrate can be photoresist, and the step of this formation groove can comprise the step of a part of removing this material layer.The step that discharges this differential electrode and common electrode can comprise etching, to remove the step of this differential electrode and common electrode pattern stack architecture in addition.
Accompanying drawing explanation
Fig. 1 means the structural representation of the first embodiment of liquid multi-layer electric capacity inclination microsensor of the present invention.
Fig. 2 means the structural representation of the second embodiment of liquid multi-layer electric capacity inclination microsensor of the present invention.
Fig. 3 is the structural representation that liquid multi-layer electric capacity inclination microsensor of the present invention is shown.
Fig. 4 a and Fig. 4 b are the first direction sensing principle schematic of liquid capacitance-type inclination microsensor of the present invention.
Fig. 5 a and Fig. 5 b are the second direction sensing principle schematic of liquid capacitance-type inclination microsensor of the present invention.
Fig. 6 is the process flow diagram that the manufacture method of liquid capacitance-type inclination microsensor of the present invention is shown.
Fig. 7 is the manufacture process intention that liquid capacitance-type inclination microsensor of the present invention is shown.
Primary clustering symbol description
100 inclination microsensors
10 first substrates
11,12,13,14,15,16 differential electrodes
11a, 12a recess
17 shared electrode
17a teat
21,22,23,24,25,26, differential electrode
27、28
29 supporting constructions
30 second substrates
31 partition walls
32 confined spaces
33 Covering Liguids
35 reading circuits
36 grooves
Embodiment
Below, with reference to embodiment, structure of the present invention and method for making are described.It is noted that: the embodiment using only for illustrate of the present invention may or preferred implementation, and not for limiting the scope of the invention.
Fig. 1 is the structural representation that the first embodiment of liquid multi-layer electric capacity inclination microsensor of the present invention is shown.As shown in the figure, the inclination microsensor 100 of the present embodiment comprises 6 differential electrodes 11,12,13,14,15,16, and they are formed in identical in fact plane.Label 17 represents common electrode, can form an electric capacity with each differential electrode.In the structure shown in Fig. 1, differential electrode 11 and 12 is decided to be to first pair, differential electrode 13 and 14 is decided to be the twoth pair, and differential electrode 15 and 16 is decided to be the 3rd pair.
Fig. 2 is the structural representation that the second embodiment of liquid multi-layer electric capacity inclination microsensor of the present invention is shown.As shown in the figure, the inclination microsensor 100 of the present embodiment comprises 4 groups of differential electrode 21-28 that are positioned on upper and lower 4 layer planes.The differential electrode that is positioned at same layer plane can comprise pair of differential electrode, or multipair differential electrode.If when multipair, its structure can be as shown in Figure 1.In this case, this liquid multi-layer electric capacity inclination microsensor comprises 12 pairs of differential electrodes.All differential electrodes can be shared one or above common electrode.
In preferred embodiment of the present invention, differential electrode is with two pairs every layer, and double-layer structure, forms 4 pairs of differential electrodes (electric capacity) altogether, comparatively practical.Reason is: manufacture comparatively simply, cost is lower, and can form the detecting of multidirectional angle of inclination.For example, but other array mode, increases or eliminates duplication, increase or reduce the differential electrode logarithm of every layer, can be suitable in the present invention.
Fig. 2 also illustrates, and above-mentioned differential electrode assembly is formed on first substrate 10.Substrate 10 shown in Fig. 2 is the substrate using in the middle of standard CMOS process, i.e. silica substrate.On this substrate 10, with standard CMOS process, form a plurality of dielectric layers, a plurality of metal levels, and a plurality of vias etc.And, in the formed stack architecture of this dielectric layer, metal level and via, with metal level or with metal level and dielectric layer, form differential electrode and common electrode pattern, then to discharge electrode pattern such as modes such as Wet-type etchings, just can obtain required electrode.
Fig. 2 illustrates 4 layers of electrode layer and is formed on substrate 10.But in preferred embodiment of the present invention, do not use the first metal layer.In this example, the electrode layer 21,22 of below in figure not, but on the second above metal level 23,24, the electrode layer below forming.Between each electrode layer, can separate by dielectric layer, or separate with dielectric layer and metal level.This common electrode can comprise a plurality of metal levels and a plurality of dielectric layer.And arbitrary electrode layer also can comprise a plurality of metal levels and a plurality of dielectric layer.Therefore, these electrode layers need define its scope with via, and the protective seam while discharging as etching.
Fig. 3 is the structural representation that liquid multi-layer electric capacity inclination microsensor of the present invention is shown.The electrode layer assembly shown in Fig. 3 with 4 layers of structure.Shown in Fig. 3,, with a plurality of dielectric layers, a plurality of metal level and a plurality of via, form supporting construction 29 in this differential electrode 21-28 and common electrode 17 regions around.Above this supporting construction 29, form partition wall 31, partition wall 31 tops cover second substrate 30, make this first substrate 10, this supporting construction 29, partition wall 31 and second substrate 30 definition one confined spaces 32.Covering Liguid 33 is sealed in this confined space 32 with electrode layer assembly.
In preferred embodiment of the present invention, this partition wall 31 is used photoresist manufacture, and this second substrate 30 is glass materials.But the present invention's material applicatory is not limited to shown in this example.
This differential electrode 21-28 is formed on more than second metal level, can reduce and substrate between stray capacitance.But be manufactured on other layer, be also fine.If electrode layer is not formed on first layer metal layer, between this electrode layer and substrate 10, will there is material layer.This material layer may also be removed after electrode discharges, but also may retain.In addition, a part for this differential electrode 21-28 and this common electrode 17 is preferably formed on same metal level, but also can be formed on different metal levels.
In order to suppress this Covering Liguid 33 because capillary action is attached on the surface of this differential electrode 21-28 and this common electrode 17, can impose in the whole or selected part of this electrode surface lubricating layer (not shown).The material of this lubricating layer is well-known to those skilled in the art, for example, can be Teflon.This second substrate 30 is attached to the method for first substrate 10, can uses any fixture, and with suitable combination, second substrate 30 is fixed to the precalculated position of first substrate 10.For example with viscose, fix, can select the viscose with these partition wall 31 materials and this metal level or dielectric layer material compatibility, with pressure or add heat fixation, form binding layer (not shown).
Please refer to Fig. 1.Shown in this Fig. 1, differential electrode 11-16 respectively forms scalloped profile.Portion is provided with a plurality of breach around within it.These common electrode 17 bodies were formed in the interior week of differential electrode 11-16, and stretched in the plurality of breach with a plurality of teats.Thus formed structure, the i.e. poor formula electric capacity of so-called finger.In the present embodiment, by by each of differential electrode 11-16 to being distributed in the formed circular two halves of differential electrode, reconnaissance range can be expanded to ± 90 °.But in actual applications, may not need so large angular range, so the contour shape of differential electrode 11-16 only need occupy a circular part, for example any angle between 45 ° to 90 °.In addition, the formed contour shape of differential electrode 11-16 should be similar to, and area is equal in fact.It is preferred mode that every pair of differential electrode combines in mirror mode.The benchmark of this mirror is preferably the circular central that differential electrode 11-16 surrounds.So can guarantee the correctness of measurement result.
In other example of the present invention, the profile of differential electrode 11-16 is the conglobate part of shape not.Anyly can make a pair of two differential electrodes form corresponding in fact shape, and not reduce to measure the shape of correctness, all applicable.For example equilateral triangle or isosceles triangle, isosceles are polygonal, are all its examples.
Fig. 1 also illustrates, and this differential electrode 11-16 is formed breach above, is deep into the inside of battery lead plate, reaches more than 1/2.That is to say, when this battery lead plate 11-16 is while being fan-shaped, this breach extends internally and reaches the more than 1/2 of radius.Meanwhile, these common electrode 17 extensions, also coordinate and stretch into this breach, reach the over half of differential electrode plate radius.The electric capacity so forming, capacitance is higher, comparatively responsive for the change at angle of inclination, can improve precision or the resolution of detecting.
In the example of Fig. 2, because multilayer differential electrode is provided, when measuring, each can be represented with matrix-style capacitance variations to affiliated electrode, can by simple detecting mode, record the variation at angle of inclination.In other words, do not need to improve the resolution of capacitance detecting, can detect trickle angle change.
The angle of inclination detector with above feature, can utilize standard CMOS process manufacture, thus can be manufactured in same substrate with reading circuit, and complete, this is enough to simplify produces and reduces costs. simultaneouslyIn addition can solve, a difficult problem for detector and the integrated difficulty of reading circuit in prior art.
Fig. 4 a and Fig. 4 b are the first direction sensing principle schematic of liquid capacitance-type inclination microsensor of the present invention.In Fig. 3, Vin represents input voltage, and 35 represent reading circuit.Sensor 100 of the present invention is equivalent to 24 groups of electric capacity, and the liquid 33 covering on electric capacity can change because of the variation of sensor institute angle setting degree the relative position with differential electrode, and the area that makes to be covered on each battery lead plate changes, and then produces capacitance variations.By reading circuit 35, this capacitance variations signal conversion voltage is exported.Fig. 4 a illustrates this sensor 100 when initial state, and it is identical that Covering Liguid 33 covers the 2nd pair of area on differential electrode 13,14, therefore the capacitance that both produce is identical.But for the 1st pair of differential electrode 11,12 and the 3rd pair of differential electrode 15,16, for covering and complete unlapped combination completely.
When as shown in Figure 4 b, when detector 100 tilts to first direction, liquid maintains original position because of gravity, and now each area that capped liquid 33 of differential electrode is covered changes, thereby produces the variation of capacitance.According to sense capacitance structural design of the present invention, measure each to the capacitance of differential electrode after, calculate gained difference will with angle of inclination height of formation linear relationship.Therefore can calculate this detector to the angle of inclination of first direction.
Fig. 5 a and Fig. 5 b are the second direction sensing principle schematic of liquid capacitance-type inclination microsensor of the present invention.In the original state of Fig. 5 a, the area of each layer of capped liquid 33 covering of differential capacitor is identical.But when this sensor is after second direction tilts, as shown in Figure 5 b, the area that each layer covered by liquid 33 changes, thereby causes the variation of capacitance.By from the measured capacitance of each differential electrode with matrix representation, formed vector can represent that this sensor is to the angle of inclination of first direction and second direction.
Below, the method for making of liquid multi-layer electric capacity inclination microsensor of the present invention is described with example.Fig. 6 is the process flow diagram that liquid capacitance-type inclination microsensor manufacture method of the present invention is shown.Fig. 7 is the manufacture process intention that liquid capacitance-type inclination microsensor of the present invention is shown.As shown in Figure 6, when manufacturing liquid capacitance-type inclination microsensor of the present invention, first in step 601, manufacture substrate 10.The material of this substrate 10 is not limited to them, but typically can use the baseplate material of generally applying in standard CMOS process, i.e. silica substrate, to make the present invention can utilize the manufacture of CMOS technique.But use other firm material, or other is adapted at the material using in CMOS technique, also can obtains identical effect.Secondly, in step 602, on this substrate 10, form material layer.This material layer can comprise: the dielectric layer that is formed on these substrate 10 tops; Be formed on this dielectric layer top, a plurality of metal levels and dielectric layer alternate with each other; And position via in the inner.These material layers form stack architecture, but when manufacturing this stack architecture, form therein the pattern of slant angle sensor 100 of the present invention and reading circuit 35.The method that is applicable to manufacturing this material layer, comprises any commercial technique that is used for forming circuit structure and/or microstructure, and wherein applicable is standard CMOS process.
This reading circuit 35 can be the circuit structure that utilizes commercial circuit designs instrument to complete, for example, by the prepared multilayer circuit layer of CMOS technique.Be used for detecting capacitance and export the circuit of measurement result, can design with the circuit of any known technology.To those skilled in the art, design has the circuit of above-mentioned functions, and utilizes suitable technique to be formed on this substrate 10, is apparent, correlation technique details at this without repeating.
As for the manufacture of these detector 100 parts, be to be formed at least two central metal levels of being separated by of this material layer, for example three-layer metal layer and the 5th metal level in this example.Its manufacture method comprises: after forming special metal layer, with methods such as etchings, form differential electrode and common electrode pattern, this electrode pattern around with above form dielectric layer, be so concatenated to form the step of stack architecture.Wherein, belong to approximate or in correspondence with each other with the contour shape of a pair of differential electrode, and area essence is identical.Within 17 of shared electrode are formed on the interior week of differential electrode.At this differential electrode 11-16, also form recess 11a, 12a in the face of the edge of shared electrode 17, at the correspondence position of shared electrode 17, form teat 17a, stretch in this recess 11a, 12a.In this stack architecture, form the battery lead plate pattern with above-mentioned and further feature, also belong to prior art.In addition, in same level or the identical plane of essence, form multipair differential electrode, also can utilize existing technology to realize.Those skilled in the art, after reading this case patent specification and accompanying drawing, can be easily the complete.Correlation technique details, also repeats no more at this.
In this material layer, also can comprise with the common supporting construction 29 forming of a plurality of metal levels, a plurality of dielectric layer and a plurality of via.This supporting construction 29 normally runs through a plurality of dielectric layers and metal level with via, to improve its intensity.Like this, be enough to support the structure of the confined space that will form.Manufacture the technology of this kind of supporting construction, also can use above-mentioned CMOS technique, complete in same process step with this reading circuit 35 and battery lead plate 21-28.Correlation technique details, also needn't elaborate any further.
In other example of the present invention, this battery lead plate 21-28 not only includes single metal level, but comprises multiple layer metal layer and between the dielectric layer of metal interlevel.If necessary, also can comprise via.Material as for being applicable to this metal level and dielectric layer and via, is not limited to them, and is well known to those skilled in the art.Typically, the material of this metal level can be aluminium, and the material of this dielectric can be silicon dioxide, and the material of this via can be copper.
Secondly, in step 603, remove this battery lead plate 21-28 and 17 dielectric layer or dielectric layer and metal level in addition, until battery lead plate 21-28,17 discharge.Acquired results as shown in Figure 7a.In step 604, at this battery lead plate 21-28,17 surfaces apply lubricating layer (not shown).The material of this lubricating layer can be anyly can eliminate or reduce the capillary material of this electrode plate surface.In preferred embodiment of the present invention, adopt Teflon.Certainly, other can provide the material of identical or similar functions, all applicable.Its applying method is also without any technical restriction, but comparatively feasible to revolve die coating method, effect is also good.This lubricating layer thickness is also unrestricted, but should not be too thick, in order to avoid impact detecting effect.
Then,, in step 605, prepare second substrate 30.The material of this second substrate 30 is not limited to them, but with hard, be easily processed as suitable.In preferred embodiment of the present invention, this second substrate 30 is glass substrates.But other material, for example plastics, resin, glass fibre, metal, pottery or its compound substance, all applicable.In step 606, on this second substrate form partition material layer 31 thereafter.The material of this partition material layer 31 is also without any restrictions.But consider that technique is convenient, in preferred embodiment of the present invention, utilizes photoresist manufacture.Applicable photoresist comprises SU-8 etc.This partition material layer 31 can be formed on this second substrate 30 by any mode, and its thickness is also without any restrictions, but is advisable to hold Covering Liguid can form enough volumes.Typically, approximately can be between 100 to 2,000um, more fortunately between 200 to 1,000um.The material layer of gained, as shown in 7b figure.In step 607, at the interior formation groove 36 of this partition material layer 31, with the chamber as holding Covering Liguid.The method that forms groove, is mainly a part of removing this material layer, for example, with engraving method, form.But otherwise,, such as technology such as burn offs, be also fine.If necessary, can separately form line of cut (not shown).Material layer after formation comprises this second substrate 30, groove 36 and groove 36 partition wall 31 around, as shown in Figure 7 c.
Then,, in step 608, in this groove 36, add Covering Liguid 33.This Covering Liguid 33 can be conductive liquid or dielectric fluid.If conductive material, can be electrolytic solution, magnetic liquid, liquid metal, containing the materials such as liquid of nano-metal particle.If dielectric fluid, material higher with proportion and that stickiness is lower is more applicable, for example silicone oil, i.e. its suitable example.Covering Liguid 33 amounts that add are not limited to them, but are advisable to be full of the half left and right of these chamber 36 volumes.Rapid 609, on the open end face of this partition wall 31, apply viscose.In step 610, this first substrate 10 is covered on this second substrate 30, this multilayer differential electrode 21-28 and this common electrode 17 are entered in this groove 36.Now, this supporting construction 29 is withstood this viscose.In step 611, fix this first substrate 10 and this second substrate 30.Its mode can be any curable this viscose, and makes both closely fixing methods.Finally, with detector 100Wei unit, cut formed material layer, obtain inclination microsensor of the present invention, its structure as shown in Figure 3.
Liquid multi-layer electric capacity inclination microsensor disclosed in this invention is not only simple in structure, easy to manufacture, and can be combined with standard CMOS process, integrated with reading circuit in manufacture process, is enough to save cost and manufacturing time.Sensor of the present invention can be detected three-dimensional angle of inclination, and because using measured value matrix to do basis, can reduce the demand of system manufacturing accuracy.The made microsensor crystallite dimension of the present invention can be dwindled.Typically, with the area of 2.3*3.1mm, can be made into the detector that there is high sensitivity and contain or do not contain reading circuit.The invention provides the pitch angle detector of reconnaissance range up to ± 90 °.
Claims (31)
1. a liquid capacitance-type inclination microsensor, is characterized in that, has: at least two pairs of differential electrodes, and every pair of differential electrode is positioned on same level; At least one common electrode, a part for this common electrode and each is in the same plane to differential electrode; This differential electrode and this common electrode are arranged in a confined space; And the Covering Liguid of enclosing this confined space.
2. liquid capacitance-type inclination microsensor as claimed in claim 1, is characterized in that, the electrode profile of this multipair differential electrode is the conglobate part of shape respectively.
3. liquid capacitance-type inclination microsensor as claimed in claim 2, is characterized in that, the electrode profile of this multipair differential electrode forms respectively fan-shaped.
4. liquid capacitance-type inclination microsensor as claimed in claim 1, is characterized in that, this multipair differential electrode is formed in Different Plane, mutually with a spacing separately.
5. liquid capacitance-type inclination microsensor as claimed in claim 1, is characterized in that, also comprises reading circuit, the capacitance each electrode of differential electrode being produced in order to read this.
6. liquid capacitance-type inclination microsensor as claimed in claim 1, is characterized in that, surperficial at least a portion of the plurality of differential electrode and/or this common electrode also comprises lubricating layer.
7. liquid capacitance-type inclination microsensor as claimed in claim 1, is characterized in that, this common electrode is formed on the inner side of described differential electrode.
8. liquid capacitance-type inclination microsensor as claimed in claim 1, is characterized in that, described differential electrode comprises respectively a plurality of breach that are formed on battery lead plate edge, and this common electrode comprises a plurality of teats that stretch into this breach.
9. liquid capacitance-type inclination microsensor as claimed in claim 8, is characterized in that, the profile of described differential electrode plate is fan-shaped, and half of fan-shaped radius that described a plurality of breach extends to each differential electrode plate is more than length.
10. liquid capacitance-type inclination microsensor as claimed in claim 1, is characterized in that, described Covering Liguid is a kind of in conductive liquid and dielectric fluid.
11. liquid capacitance-type inclination microsensors as claimed in claim 1, is characterized in that, described differential electrode and described common electrode are formed on a silicon substrate.
12. liquid capacitance-type inclination microsensors as claimed in claim 5, is characterized in that, described differential electrode and described common electrode are formed on a silicon substrate, and described reading circuit is formed on the silicon substrate of this differential electrode and this common electrode.
13. liquid capacitance-type inclination microsensors as claimed in claim 1, is characterized in that, described differential electrode and described common electrode are formed on the dielectric layer on a silicon substrate.
14. liquid capacitance-type inclination microsensors as claimed in claim 1, is characterized in that, the profile of described multipair differential electrode and area can be identical or different each other.
15. 1 kinds of methods of manufacturing liquid multi-layer electric capacity inclination microsensor, is characterized in that, comprise the steps:
Prepare first substrate;
On this first substrate, form a stack architecture that comprises a plurality of metal levels and a plurality of dielectric layers; In this stack architecture, comprise the pattern of at least two pairs of differential electrodes and at least one common electrode, it is characterized in that, the conglobate part of outline-shaped of described differential electrode, and arbitrary this differential electrode is had to the area that approximate shape is identical with essence;
At least two pairs of differential electrodes and at least one common electrode described in release;
Prepare second substrate;
On this second substrate, form material layer;
In this material layer, form groove;
In this groove, add Covering Liguid;
This first substrate is covered on this second substrate, this differential electrode and common electrode are entered in this groove; And
In conjunction with this first substrate and this second substrate.
16. as the method for claim 15, it is characterized in that, the profile of described differential electrode is fan-shaped.
17. as the method for claim 15, it is characterized in that, different right described differential electrodes are positioned at the different layers of this stack architecture, and separated from one another.
18. as the method for claim 15, it is characterized in that, the profile of different right described differential electrodes is identical with area.
19. as the method for claim 15, it is characterized in that, this first substrate is silicon substrate, and this second substrate is glass substrate or plastic base.
20. as the method for claim 15, it is characterized in that, this common electrode is formed on the periphery of corresponding differential electrode.
21. as the method for claim 15, it is characterized in that, this differential electrode comprises respectively a plurality of breach that are formed on battery lead plate edge, and this common electrode comprises a plurality of teats that stretch into this breach.
22. as the method for claim 21, it is characterized in that, the profile of this differential electrode plate is fan-shaped, and fan-shaped half that the plurality of breach extends to differential electrode plate is more than length.
23. as the method for claim 15, it is characterized in that, this Covering Liguid is a kind of in conductive liquid and dielectric fluid.
24. as the method for claim 15, it is characterized in that, described differential electrode and common electrode are formed on the material layer on described first substrate, and the method also comprises: after the described first substrate of preparation, on this first substrate, form material layer.
25. as the method for claim 24, it is characterized in that, this material layer comprises at least one dielectric layer.
26. as the method for claim 24, it is characterized in that, this material layer comprises at least one metal level and a dielectric layer.
27. as the method for claim 15, it is characterized in that, also comprises: when forming this differential electrode with common electrode pattern, form reading circuit simultaneously.
28. as the method for claim 24, it is characterized in that, also comprises: when forming this differential electrode with common electrode pattern and this material layer, form reading circuit simultaneously.
29. as the method for claim 15, it is characterized in that, also comprises: after this differential electrode and common electrode release, in its surperficial at least a portion, apply lubricating layer.
30. as the method for claim 15, it is characterized in that, the material layer forming on this second substrate is photoresist, and the step of this formation groove comprises: a part of removing this material layer.
31. as the method for claim 15, it is characterized in that, the step that discharges this differential electrode and common electrode comprises etching, to remove this differential electrode and common electrode pattern stack architecture in addition.
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| CN201210377904.7A CN103712601B (en) | 2012-10-08 | 2012-10-08 | Liquid multilayer-capacitaninclination inclination microensor |
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| CN201210377904.7A CN103712601B (en) | 2012-10-08 | 2012-10-08 | Liquid multilayer-capacitaninclination inclination microensor |
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| CN103712601B (en) | 2016-06-01 |
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