CN103828036B - Methods of transferring layers of material in 3d integration processes and related structures and devices - Google Patents

Methods of transferring layers of material in 3d integration processes and related structures and devices Download PDF

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Publication number
CN103828036B
CN103828036B CN201280046870.1A CN201280046870A CN103828036B CN 103828036 B CN103828036 B CN 103828036B CN 201280046870 A CN201280046870 A CN 201280046870A CN 103828036 B CN103828036 B CN 103828036B
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ion
donor structure
region
donor
material layer
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CN103828036A (en
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玛丽亚姆·萨达卡
约努茨·拉杜
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Soitec SA
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Soitec SA
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Priority claimed from FR1159358A external-priority patent/FR2981501B1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout

Abstract

Methods of transferring a layer of semiconductor material from a first donor structure to a second structure include forming a generally planar weakened zone within the first donor structure defined by implanted ions therein. At least one of a concentration of the implanted ions and an elemental composition of the implanted ions may be formed to vary laterally across the generally planar weakened zone. The first donor structure may be bonded to a second structure, and the first donor structure may be fractured along the generally planar weakened zone, leaving the layer of semiconductor material bonded to the second structure. Semiconductor devices may be fabricated by forming active device structures on the transferred layer of semiconductor material. Semiconductor structures are fabricated using the described methods.

Description

Method and dependency structure and the device of material layer is shifted in the integrated process of 3D
Technical field
The present invention relates to by material from alms giver in the integrated process of three-dimensional (3D) adopting in semiconductor device manufactures (donor) method that structure is transferred to acceptor (recipient) structure.
Background technology
The three-dimensional (3D) of two or more semiconductor structures is integrated in microelectronic applications and can produce multiple advantages.Example As, the integrated electric property that can be improved of the 3D of micromodule and power consumption, reduce the area of device encapsulation simultaneously.For example join See " The Handbook of 3D Integration, " Wiley VCH (2008) of P.Garrou et al..By by quasiconductor Bare crystalline is attached to one or more additional semiconductor wafers (that is, bare crystalline and bare crystalline (D2D)), quasiconductor bare crystalline is attached to one Or multiple semiconductor crystal wafer (that is, bare crystalline and wafer (D2W)) and semiconductor crystal wafer is attached to one or more additional partly lead Body wafer (that is, wafer and wafer (W2W)) or combinations thereof, the 3D that can carry out semiconductor structure is integrated.
It is referred to as SMART- in the artThe process processing is used in the integrated process of monolithic 3D.SMART-Process and be for example described following：United States Patent (USP) No.RE39,484 authorizing Bruel (is sent out on 2 6th, 2007 Cloth), authorize United States Patent (USP) No.6,303,468 (issue of October 16 calendar year 2001) of Aspar et al., authorize U.S. of Aspar et al. State's patent No.6,335,258 (on January 1st, 2002 issue), authorize United States Patent (USP) No.6,756,286 of Moriceau et al. (on June 29th, 2004 issue), authorize Aspar et al. United States Patent (USP) No.6,809,044 (on October 26th, 2004 issue) and Authorize United States Patent (USP) No.6,946,365 (September was issued on the 20th in 2005) of Aspar et al..
Briefly, SMART-Process be related to along the face that is ion implanted by multiple ions (for example, hydrion, helium from Son or one kind of inert gas ion or more kinds of) it is implanted in donor structure.Along the ion limit that face implantation is ion implanted Determine the reduction face in donor structure, donor structure is then along this reduction facial cleft or fracture.As known in the art, ion Depth in implantation donor structure changes with the energy being ion implanted in donor structure at least in part.In general, mental retardation The ion of amount implantation will be implanted with relatively shallower depth, and the ion of high-energy implantation will be with relatively deep depth implantation.
Donor structure is bonded to another host structure, and then donor structure is along being ion implanted facial cleft or fracture.For example, Donor structure and the host structure of joint can be heated, so that donor structure is along being ion implanted facial cleft or fracture.Optional Ground, can apply mechanical force to help donor structure along facial cleft is ion implanted to donor structure.Donor structure along from After son implantation facial cleft or fracture, a part for donor structure remains engaged to host structure.The remainder of donor structure Can be in further SMART-Reuse in process, the extention of donor structure is transferred to host structure.
After fracture is processed, the surface of the fracture of donor structure can include the ionic impurity in the lattice of donor structure And flaw, in some applications, it can include monocrystalline semiconductor material.Host structure can be transferred to donor structure Part processed, to make great efforts to reduce impurity levels in the transfer part of donor structure and improve lattice quality (that is, reducing the defects count in the close lattice in the surface ruptured).This process often refers at e.g., from about 1000 DEG C Thermal annealing under high temperature.
Content of the invention
There is provided Summary to introduce the selection of concept according to simple form.Example embodiment party in disclosure below These concepts are described in more detail in the detailed description of formula.Present invention part is not intended to identify claimed master The key feature of topic content or key character, are not intended to limit the scope of claimed subject content.
In some embodiments, the present invention includes for semiconductor material layer being transferred to the second structure from the first donor structure Method.According to methods described, can will be ion implanted in the first donor structure, to be formed by implanting in the first donor structure Ion limit general planar weakening region.The weakening region of this general planar can be by the described quasiconductor of the first donor structure Material layer is separated with the remainder of the first donor structure.The elemental composition of the ion of the concentration of ion of implantation and implantation is extremely A few side can be formed as on the weakening region of whole general planar along the weakening region parallel to general planar at least one Change on direction.First donor structure can be bonded to the second structure, and the first donor structure can be along general planar Rupture in weakening region, thus retain making described semiconductor material layer be bonded to the second structure.
In other embodiments, the method that the present invention includes manufacturing semiconductor device.According to methods described, can be by half Conductor material layer is transferred to the second structure from the first donor structure.The step shifting described semiconductor material layer can include：Will It is ion implanted in the first donor structure, to form the reduction of the general planar being limited by the ion implanted in the first donor structure Area；First donor structure is bonded to the second structure；And so that the first donor structure is ruptured along the weakening region of general planar, from And leave the described semiconductor material layer being bonded to the second structure.It is formed at the weakening region of the general planar in the first donor structure The described semiconductor material layer of the first donor structure can be separated with the remainder of the first donor structure.In addition, it is substantially flat Smooth weakening region can be formed such that the ion of implantation concentration and implantation the elemental composition of ion at least one party whole Change along at least one direction of the weakening region parallel to general planar on the weakening region of individual general planar.Can be in transfer Semiconductor material layer on manufacture multiple active device structures.
In other embodiments, the present invention includes the semiconductor structure manufacturing using method disclosed herein.For example, half Conductor structure can include first donor structure wherein with the weakening region of general planar.The weakening region of general planar can be by Limit along the ion of the implantation of the weakening region of general planar in first donor structure.The weakening region of general planar can be by first The semiconductor material layer of donor structure is separated with the remainder of the first donor structure.Additionally, the concentration of ion of implantation and plant At least one party of the elemental composition of the ion entering can be along parallel to general planar on the weakening region of whole general planar Change at least one direction of weakening region.Semiconductor structure can also include being bonded to the described quasiconductor of the first donor structure Second structure of material layer.
Brief description
This specification is with claim for terminating although claim particularly points out and clearly claimed the reality of the present invention Apply mode, but when reading in combination with accompanying drawing, the advantage of embodiment of the present disclosure from embodiment of the present disclosure certain Can easily determine, wherein in the description of a little examples：
Figure 1A to Fig. 1 F is some embodiments schematically showing according to disclosed method of simplification by partly Conductor material layer is transferred to the sectional view of alms giver and/or host structure the method for the second host structure from the first donor structure, Wherein formed in donor structure and non-homogeneous face is ion implanted；
Fig. 2A to Fig. 2 G is the other embodiment schematically showing according to disclosed method of simplification by partly Conductor material layer is transferred to the sectional view of alms giver and/or host structure the method for the second host structure from the first donor structure, Wherein by the region implanting ions of the selection of donor structure, the region of described selection includes being formed at recessed in donor structure Portion；
Fig. 3 A and Fig. 3 B is alms giver's knot of some embodiments schematically showing according to disclosed method simplifying The sectional view of the process of structure, wherein passes through the region implanting ions of the selection of donor structure, the region of described selection includes being formed Dielectric material in the recess in donor structure；
Fig. 4 A and Fig. 4 B is alms giver's knot of some embodiments schematically showing according to disclosed method simplifying The sectional view of the process of structure, wherein processes to be formed in donor structure using multiple ion implantation and non-homogeneous face is ion implanted；
Fig. 5 A and Fig. 5 B is alms giver's knot of the other embodiment schematically showing according to disclosed method simplifying The sectional view of the process of structure, wherein processes to be formed in donor structure using multiple ion implantation and non-homogeneous face is ion implanted；
Fig. 6 A and Fig. 6 B is the donor structure of the embodiment schematically showing according to disclosed method simplifying The sectional view processing, wherein donor structure includes semiconductor-on-insulator formula structure；
Fig. 7 A and Fig. 7 B is the donor structure of the embodiment schematically showing according to disclosed method simplifying The sectional view processing, wherein donor structure includes semiconductor-on-insulator formula structure and has ion bondage layer wherein；With And
Fig. 8 A to Fig. 8 E is the donor structure of the embodiment schematically showing according to disclosed method simplifying The sectional view processing, wherein before being ion implanted in donor structure by recess, forms sidewall spacer in recess.
Specific embodiment
Diagram provided herein is not intended to be the actual diagram of any concrete semiconductor structure, device, system or method, And be only intended to describe the Utopian expression of embodiment of the present disclosure.
The scope of the embodiment that any title used herein should not be construed as limiting the invention, the scope of the present invention by Claim and its equivalent limit.Throughout the specification, the concept described in any concrete title is generally applicable to Other parts.
The list of references quoted no matter herein how characterization, is also not considered as that they are with respect to claimed herein The present invention of subject content prior art.
According to some embodiments, a kind of material layer (such as semiconductor material layer) is transferred to the from the first donor structure The method of two host structure includes：To be ion implanted in the first donor structure, to be formed by implanting in the first donor structure The weakening region of the general planar that ion limits.The weakening region of general planar will be from the material layer and the of the first donor structure transfer The remainder of one donor structure separates.On the weakening region of whole general planar, the weakening region of this general planar is along parallel It is heterogeneous at least one direction of the weakening region of general planar.For example, the ion of the concentration of the ion of implantation and implantation Elemental composition at least one party on the weakening region of whole general planar along the weakening region parallel to general planar at least One direction can change.First donor structure can be bonded to the second host structure, and then the first donor structure can be along The weakening region fracture of general planar, and retain and make material layer be bonded to the second host structure.Will in further detail below herein This method is described.
Fig. 1 is the sectional view schematically showing donor structure 100 simplifying.Donor structure 100 includes block materials 102, its can for example include such as silicon, germanium, the such semi-conducting material of III-V semi-conducting material (such as GaN, GaAs, InN, AlN, InGaN etc.) or these semi-conducting materials mixture.Material 102 can be polycrystalline or monocrystal material can be included Material.Donor structure 100 can be general planar and can have the first first type surface 104A and parallel to the first first type surface 104A The second relative first type surface 104B of orientation.
As shown in Figure 1A, ion (direction arrow in Figure 1A represents) can only pass through the area of the selection of donor structure 100 In domain implantation donor structure 100.Ion can include such as one kind of hydrion, helium ion and inert gas ion or more Kind.Ion can be implanted in donor structure 100 along the face that is ion implanted 106.As shown in Figure 1A, ion can pass through the first master meter Face 104A implants in donor structure 100 along the direction being basically perpendicular to the first first type surface 104A.
The depth being ion implanted in donor structure 100 is at least in part with the energy being ion implanted in donor structure 100 Change.In general, will be implanted with relatively shallower depth with the ion of low-yield implantation, and the ion with high-energy implantation will With relatively deep depth implantation.Can be by being chosen as applying ion with the desired depth implantation of distance the first first type surface 104A Predetermined power in main structure 100 will be ion implanted in donor structure 100.At least some ion can desirably implantation depth Depth implantation in addition, and with the donor structure 100 of the change in depth of distance the first first type surface 104A in donor structure 100 Ion concentration curve chart can be presented on limit be ion implanted face 106 expectation implantation depth at there is maximum substantially Bell (symmetrically or non-symmetrically) curve.In other words, face 106 is ion implanted and can include tying with alms giver in donor structure 100 Maximum ion concentration in structure 100 in the face of neat (for example, centered on the maximum ion concentration face in donor structure 100) layer or Region.Weakening region that face 106 define in donor structure 100 is ion implanted, in subsequent treatment, donor structure 100 can edge Described weakening region to split or rupture, as discussed in more detail below.For example, referring briefly to Figure 1B, in donor structure There is ion and can produce defect 108 in the lattice of donor structure 100.
Face 106 is ion implanted can include single implantation face shown in Figure 1B, wherein most of ions are along donor structure Single face setting in 100.In other words, the ion of great majority implantation concentrates on the single depth in donor structure 100.This Implantation with its intermediate ion can lead to the structure in multiple implantation face contrary.For example, at the multiple implantation with different implantation energy Reason or the non-homogeneous donor structure of implantation of passing through interior (that is, non-homogeneous implant surface topography and/or non-homogeneous embedded material composition) The multiple implantation face in donor structure can be obtained.
The material layer 110 that another host structure will be transferred to from donor structure 100 is limited to the one of the face of being ion implanted 106 Side, and the remainder 112 of donor structure 100 is arranged on the side relative with material layer 110 in the face of being ion implanted 106.
Referring again to Figure 1A, as it was previously stated, on whole weakening region along the face that is ion implanted 106 general planar reduction Area is heterogeneous along at least one direction parallel to the face that is ion implanted 106.For example, the concentration of the ion of implantation and implantation At least one party of the elemental composition of ion can change on the weakening region of whole general planar.This non-homogeneous in order to be formed Weakening region, in some embodiments, can only pass through the region implanting ions of the selection of donor structure 100.For example, it is possible to it is logical Through hole 116 in transmission from one meridian to another patterned mask 118 will be ion implanted in donor structure 100.As shown in Figure 1A, patterned mask 118 can To be formed on the first type surface 104A of donor structure 100, or patterned mask 118 can separate landform with donor structure 100 Become and be simply placed on the first type surface 104A of donor structure 100 (it is directly arranged on first type surface 104A, or in first type surface Vertically separate with first type surface 104A above 104A).
To be ion implanted in donor structure 100 by the through hole 116 in patterned mask 118, only pass through material layer 110 More than first region 120 and do not pass through more than second region 122 implanting ions of material layer 110.Figure 1A and Figure 1B passes through The dotted line being vertically oriented indicates more than first region 120 and more than second region 122.(for example, the material of mask 118 hinders Hindering) ion passes through more than second region 122 and implants in donor structure 100.As it was previously stated, material layer 110 can include by Eventually in host structure (material layer 110 will be transferred to thereon) upper manufacture active semiconductor device structure (for example, crystal Pipe, capacitor, conductive path etc.) semi-conducting material.According to some embodiments of the disclosure, through hole 116 can be with selectivity Be formed in patterned mask 118 so that through hole setting by become material layer 110 inactive regions upper and with By the partially vertically alignment of the inactive regions for material layer 110, therefore the material masking material bed of material 110 of mask 118 is active Region is in case ion enters.In other words, more than first region 120 of material layer 110 can include the passive region of material layer 110 Domain, and more than second region 122 can include the active region of material layer 110.
As used herein, term " inactive regions " makes when the material layer with regard to being transferred to host structure from donor structure Used time it is intended that and comprise an area of which, in the device of the completion not including any active device structures wherein, described region Finally include passive area in material layer.As used herein, term " active region " will be when with regard to shifting from donor structure To the material layer of host structure use when it is intended that and comprise an area of which, include one or more active devices knot wherein In the device completing to manufacture of structure (such as one kind of transistor, capacitor and conductive path or more kinds of), described region is Include active region in material layer 110 eventually.
As set forth above, it is possible to by inactive regions (more than the first region 120) implanting ions of material layer 110, and obstructed The active region (more than second region 122) crossing material layer 110 implants the ion of any pronounced amount.Therefore, because with respect to neighbour The concentration (can be at least substantially zeroed) of ion present in the substantially weakening region in nearly more than first region 120, neighbouring more than first There is relatively high concentration of ion in the substantially weakening region in individual region 120, therefore limited substantially by face 106 is ion implanted Flat weakening region along the weakening region parallel to general planar at least one direction on the weakening region of whole general planar It is heterogeneous.Therefore, it is possible to use embodiments of the present invention reduce because of be ion implanted process cause to active The damage in region (that is, more than second region 122).
Reference picture 1C, the first first type surface 104A of donor structure 100 (including the surface of the material layer being transferred 110) can To be bonded to host structure 130.In some embodiments, after being ion implanted in donor structure 100 as mentioned above, can So that donor structure 100 to be bonded to host structure 130.In other embodiments, by the first first type surface of donor structure 100 After 104A is bonded to host structure 130, alms giver knot can will be ion implanted by corresponding main surfaces 104B of donor structure 100 In structure 100.After the first first type surface 104A of donor structure 100 is bonded to host structure 130, possible relative difficult is to hold Row implantation is processed, because needing higher energy in desired depth implanting ions.
In some embodiments, it is possible to use directly donor structure 100 is spliced directly to host structure by joining process 130.Alleged " direct bonding method " be set up between two structures direct solid-solid chemical bond so that they to be bonded together and Not between them using the method for inter-engagement material.Have developed direct metal-metal bonding method and direct oxidation thing-oxygen Compound joint method, will be bonded at the surface of the second structure in the metal at the surface of first structure or oxide material Metal or oxide material.The method in such as P.Garrou, et al., " The Handbook of 3D Integration, " Wiley VCH (2008) Volume 1, have been discussed in Chapter 11.
Therefore, if the material of the block materials 102 of donor structure 100 and/or host structure 130 in its composition surface not Including the suitable material for this direct joining process, then can be in the composition surface of donor structure 100 and/or host structure 130 composition surface provides proper engagement material.For example, Fig. 1 C shows composition surface (the first master meter in donor structure 100 Face 104A) grafting material 124 and composition surface in host structure 130 grafting material 132.
Grafting material 124 and grafting material 132 can have similar component it is possible to include for example that metal material is (for example Copper, aluminum, titanium, tungsten, nickel etc. or the alloy of these metals), oxide material (for example, silicon oxide) or semi-conducting material (such as silicon, Germanium, composite semiconductor material etc.).
The composition surface that grafting material 124 and grafting material 132 can be cleaned is to remove surface impurity and surface compound (for example, native oxide).Furthermore it is possible to reduce the surface roughness of composition surface to increase between composition surface in atom level The area being in close contact.The area of the close contact between composition surface is generally realized by following steps：Polishing composition surface Surface roughness to be at most decreased to the value close to atom level；Apply pressure and lead to plastic deformation between composition surface；Or Person is polished composition surface and applies both pressure, to obtain this plastic deformation.
After preparing composition surface, them can be made intimate contact with one another.Gravitation between composition surface sufficiently high with Cause molecule adhesion (total gravitation (Van der Waals of the electron interaction between the atom on two surfaces to be joined and/or molecule Power) joint that causes).Subsequently can by such for such as contact pilotage instrument donor structure 100 the first type surface 104B exposing (and/or first type surface exposing of host structure 130) is upper to be pressed, to initiate to engage ripple in donor structure 100 and host structure 130 Composition surface between whole interface propagation.The point of application tool can for example be located at donor structure 100 and/or acceptor's knot The center of structure 130 or their periphery edge close.This method is for example being published in 2011 2 with the name of Castex et al. Have disclosed in the U.S. Patent Application Publication No.US 2011/0045611A1 on the moon 24.
It is alternatively possible to heating donor structure 100 and/or host structure 130 are to help connect during joining process Conjunction is processed.
Host structure 130 can include bare crystalline or wafer, and can include in some embodiments previously having manufactured Active device structures 134.The active device structures 134 schematically showing in Fig. 1 C represent transistor, but active device knot Structure 134 can include other types of active device structures, capacitor, wire, trace and/or via etc..Active device Structure 134 potentially includes when can be with the material that is adversely affected or structure by excessive heat energy.Therefore, in some embodiment party In formula, at about 400 DEG C or lower, about 200 DEG C or lower or even can execute joining process at a temperature of room temperature.
After donor structure 100 is bonded to host structure 130, donor structure 100 can be along the face that is ion implanted 106 Split or rupture, to form the structure shown in Fig. 1 D, it includes host structure 130, pass through between grafting material 124 and engage Material 132 is bonded to the material layer 110 of host structure 130.For example, it is possible to heating donor structure 100 (and alternatively acceptor's knot Structure 130) so that donor structure 100 is split along the face that is ion implanted 106 or is ruptured.In some embodiments, in breaking part In reason, the temperature of donor structure 100 and host structure 130 may remain in about 500 DEG C or lower, about 400 DEG C or lower, or very To about 350 DEG C or lower.In order to for example prevent damaging the active device structures being previously formed on host structure 130, in fracture In processing procedure, limit temperature can be desirable to.However, in other embodiments, place of splitting can be executed at high temperature Reason.It is alternatively possible to apply mechanical force to cause or to help donor structure 100 along the face that is ion implanted 106 to donor structure 100 Split or rupture.
After fracture is processed, material layer 110 remains engaged to host structure 130, and its remaining part of donor structure 100 Divide and can reuse, as needed additional multilayer material is transferred to host structure.
After fracture is processed, the surface 111 of the fracture exposed of material layer 110 can include the material layer 110 shifting Lattice in defect and impurity.In addition, the surface of the fracture in neighbouring more than first region 120 (Figure 1B) of material layer 110 111 (by its implanting ions) there may be the defect 108 being led to as previously mentioned by the ion implanted.Therefore, it can process material The surface 111 of the fracture of the bed of material 110 is to go the removal of impurity (for example, the ion of implantation) and to improve in material layer 110 near fracture The lattice on surface 111 quality.For example, the surface 111 of fracture can be subject to chemical etching to process, mechanical polishing processes and changes It is one or more, to form the structure shown in Fig. 1 E that mechanical polishing (CMP) is processed.The structure of Fig. 1 E and the structure base of Fig. 1 D This is similar, but surface 111 is shown as, without defect 108, going out to carry high-quality surface with the surface exhibits with respect to Fig. 1 D 111.
Processing procedure for improving the quality of the material layer 110 near surface 111 can not make material layer 110 complete Free from foreign meter or there is perfect crystalline quality.However, more than first a region 120 (inactive regions can be included), second The quality of multiple regions 122 (can include active region) can be more preferable, this be due to by more than first region 120 implant from Son, and do not pass through more than second region 122 implanting ions.
Reference picture 1F, can transfer material layer 110 in and/or on manufacture active device structures 140.Illustrate in Fig. 1 C Property the active device structures 140 that illustrate represent transistor, but described active device structures 140 can include other types of Active device structures, capacitor, wire, trace and/or via etc..In addition, active device structures 140 can include CMOS Transistor npn npn, vertical transistor, diode (for example, PN junction), cross point memory device (for example, phase transition storage or another The resistive memory device of type) assembly etc. any one.It is alternatively possible in active more than second region 122 And/or upper manufacture active device structures 140, and a large amount of on passive more than first region 120 manufacture active device structures 140, as shown in fig. 1f.As manufacture on the surface 111 putting forward high-quality material layer 110 and/or in result, active device The reliability of the performance of structure 140 can improve.
Subsequent treatment can be continued according to known method, to complete the manufacture of one or more semiconductor device.This half Conductor device can include such as E-signal processor device, storage arrangement, light-sensitive unit (for example, radiant launching apparatuss (laser instrument, light emitting diode etc.) or radiation reception device (photoelectric detector, solaode etc.)), microcomputer Tool device etc..
One or more of active device structures 140 can by following steps operationally with host structure 130 One or more of active device structures 134 combine：Using the conductive via of one or more vertical extensions, conduction Electrical contact set up between them by the wire of pad and horizontal expansion.
Fig. 2A to Fig. 2 G shows the other embodiment of disclosed method.Fig. 2A is similar to Figure 1A, and shows By through hole 166 implanting ions in patterned mask 168, selected by more than first region 170 of material layer 160 to be transferred To be ion implanted in donor structure 150 to selecting property, and not pass through more than second region 172 implanting ions of material layer 160.So And, before along the face that is ion implanted 156 implanting ions to form substantially weakening region heterogeneous, in more than first region 170 In can form multiple recesses 164 in the first first type surface 154A of donor structure 150, as shown in Figure 2 A.
Recess 164 can be formed by using such as mask and etch processes in donor structure 150.In some embodiment party In formula, same mask 168 used in process is ion implanted can be functioned firstly as etching mask to form recess 164.For example, By being deposited on oxide material, nitride material or oxynitride material on the surface 154A of donor structure, can be formed Patterned mask 168.The through hole 166 through mask 168 subsequently can be formed using photoetching treatment.For example, it is possible to for shape Become and deposit patterned photomask on the material of mask 168, and etch processes can be used in mask by using patterned photomask Etching vias 166 in 168, it is then possible to remove photomask.Subsequently can be using patterned mask 168 come in donor structure 150 Middle formation recess 164, may then pass through more than first region 170 implanting ions of recess 164 and material layer 160, using covering More than second region 172 of the mould 168 masking material bed of material 160 is in case ion enters.
By via through holes 164 implanting ions, face 156 in donor structure 156 depth apart from first type surface 154A is ion implanted Degree can increase.For example, in some embodiments, face 156 is ion implanted and could be arranged to the master meter apart from donor structure 150 About 1.5 μm or more of face 154A (by its implanting ions).Make it by being ion implanted in donor structure 150 apart from master meter Face 154A is farther to be made it possible to for relatively thick material layer 160 to be transferred to host structure.
Fig. 2 B shows the structure after removal mask 168, and shows neighbouring more than first in donor structure 150 The defect 158 that leads to is processed by being ion implanted at region 170.As it was previously stated, face 156 is ion implanted can wrap shown in Fig. 2A Include single implantation face, wherein most of ions are along the single face setting in donor structure 150.In other words, great majority implantation Ion concentrate on single depth in donor structure 150.
Reference picture 2C, can fill recess 164 with dielectric material 165.For example, dielectric material can be deposited on Fig. 2 B with blanket Structure on, then can be processed removing the first type surface 154A upper recess of donor structure 150 using chemically mechanical polishing (CMP) Excessive dielectric material beyond 164.
As shown in Figure 2 D, donor structure 150 can be bonded to host structure according to the mode of previous reference picture 1C description 180.Host structure 180 can include active device structures 184 in some embodiments.In addition, as discussed previously, applying The composition surface (the first first type surface 154A) of main structure 150 can arrange grafting material 174, and connecing in host structure 180 Close and on surface, grafting material 182 can be set.Grafting material 174 and grafting material 182 can have similar composition it is possible to Including such as metal material (for example, copper or copper alloy) or oxide material (for example, Si oxide).Can be in grafting material Set up direct metal-metal between 174 and the abutment surface of grafting material 182 or oxide-oxide engages, such as reference before The description of Fig. 1 C.
After donor structure 150 is bonded to host structure 180, donor structure 150 can be made along face is ion implanted 156 split or rupture, to form the structure shown in Fig. 2 E, its material including host structure 180 and being bonded to host structure 180 The bed of material 160.Donor structure 150 can rupture along the face that is ion implanted 156, such as the description of reference picture 1D before.Process in fracture Afterwards, the surface 161 of the fracture exposed of material layer 160 can include the defect in the lattice of material layer 160 of described transfer And impurity.In addition, the defect 158 being led to by the ion implanted as previously mentioned may reside in more than first near material layer 160 At the surface 161 of fracture of individual region 170 (Fig. 2 B) (by its implanting ions).Therefore, it can process the fracture of material layer 160 Surface 161, to go the removal of impurity (for example, the ion of implantation) and to improve at the surface 161 of the close fracture in material layer 160 Lattice quality.For example, the surface 161 of fracture can be subject to chemical etching to process, mechanical polishing processes and chemical machinery is thrown The structure shown in one or more Fig. 2 F with formation that light (CMP) is processed.Alternatively, dielectric material 165 can serve as etching and stops Only material.In other words, it is possible to use chemical etching is processed, mechanical polishing is processed and chemically-mechanicapolish polishes in (CMP) process A kind of or more kinds of come from fracture surface 161 remove material till a large amount of dielectric materials 165 become to expose.Therefore, In some embodiments, more than the first passive region 170 of the material layer 160 of described transfer can at least substantially be removed (Fig. 2 B).In other embodiments, passive more than first region 170 (Fig. 2 B) of the material layer 160 of transfer can be retained A part.The structure of Fig. 2 F is similar to the structure of Fig. 2 E, but the region of the previous inclusion defect on surface 161 158 (Fig. 2 E) It is removed.
Reference picture 2G, can transfer material layer 160 in and/or on manufacture active device structures 190.Illustrate in Fig. 2 G Property the active device structures 190 that illustrate represent transistor, but active device structures 190 can include other types of active Device architecture, capacitor, wire, trace and/or via etc..In addition, active device structures 190 can include CMOS-type crystalline substance Body pipe, vertical transistor, diode (for example, PN junction), cross point memory device (for example, phase transition storage or other type Resistive memory device) assembly etc. any one.It is alternatively possible in active more than second region 172 and/or Upper manufacture active device structures 190, and the active device structures of pronounced amount are not manufactured on passive more than first region 170 190, as shown in Figure 2 G.As manufacture on the surface 161 of the material layer 160 of Quality advance and/or in result, active device The performance reliability of structure 190 can improve.
Subsequent treatment can be continued according to known method, to complete the manufacture of one or more semiconductor device, as front institute State.
In Additional embodiments, the method for those above by reference to Fig. 2A to Fig. 2 G description can be performed similarly to, its In in donor structure formed recess after and also with dielectric material filling recess after execution process is ion implanted.For example, Fig. 3 A shows the donor structure 200 similar to the donor structure 150 shown in Fig. 2A.Donor structure 200 includes block materials 202, and there is the first first type surface 204A and the second relative first type surface 204B.As the description with regard to donor structure 150, in alms giver Multiple recesses 212 can be formed in first first type surface 204A of structure 200.
Recess 212 can be formed using such as mask and etch processes in donor structure 200.For example, it is possible to pass through On the surface 204A of donor structure 200, deposited oxide material, nitride material or oxynitride material are forming patterned covering Mould 216.The through hole 218 through mask 216 subsequently can be formed using photoetching treatment.For example, patterned photomask can deposit In the material for forming mask 216, and can be etched logical in mask 216 using etch processes using patterned photomask Hole 218, then can remove photomask.Subsequently recess can be formed in donor structure 200 using patterned mask 216 212.
Reference picture 3B, can arrange dielectric material 214 in recess 212, such as the dielectric material 165 with regard to Fig. 2 C before Description.Before being ion implanted in donor structure 200, dielectric material 214 can be arranged in recess 212.Can pass through Recess 212 and donor structure totally will be ion implanted along the face that is ion implanted 206 by the dielectric material 214 in recess 212 In 200, to limit the weakening region of general planar in donor structure 200.As it was previously stated, face is ion implanted shown in Fig. 3 B 206 can include single implantation face, and wherein most of ions are along the single face setting in donor structure 200.In other words, greatly The ion of most implantation concentrates on single depth in donor structure 200.The material layer 210 to shift from donor structure 200 can To be limited between the face of being ion implanted 206 and the first first type surface 204A.
As it was previously stated, by more than first region 220 being ion implanted in donor structure 200, and ion can not planted Enter in more than second region 222 in donor structure 200.More than first region 220 illustrates to lack along the face that is ion implanted 206 Fall into 208.In some embodiments, more than first region 220 can include the inactive regions of donor structure 200, and second Multiple regions 222 can include the active region in donor structure 200.Although mask 216 not shown in Fig. 3 B, at some In embodiment, can be using the same mask 216 for forming recess 212 in process is ion implanted, to plant along ion Enter face 206 and form non-homogeneous weakening region.In other embodiments, it is possible to use different masks.
After implanting ions as described above, it is possible to use the method as described in reference picture 2D to 2G herein previously is by material Layer 210 is transferred to host structure.
In the embodiment previously describing, obstructed by more than first region implanting ions of material layer to be transferred Cross more than second region implanting ions of material layer to be transferred so that donor structure in along the face that is ion implanted general planar Weakening region non-homogeneous.According to embodiment of the present disclosure, it is possible to use other methods form non-homogeneous weakening region.In additional reality Apply in mode, implanting ions can be come by both more than first region of material layer to be transferred and more than second region, But can make ion concentration in region, the elemental composition of ion or the two in more than first region of material layer to be transferred There is difference and more than second region between.In these Additional embodiments, by more than first region and more than second region The ion of both implantation can form single implantation face, and the ion of wherein substantially main implantation is located at alms giver's knot of implantation In structure.
For example, Fig. 4 A shows to be ion implanted in process first and implants in donor structure 250 along the face that is ion implanted 256 Multiple ions.As it was previously stated, donor structure 250 can include block materials 252, and have the first first type surface 254A with relative The second first type surface 254B.Ion can equably be implanted in donor structure 250 so that in more than first region 270 and second In both multiple regions 272, more than first defect 258 is formed in a substantially even manner and is entirely ion implanted on face 256.
Reference picture 4B, after first is ion implanted process, it is possible to use second is ion implanted process by more than first Region 270 is implanted additional ion and is not passed through more than the second additional ion of region implantation.Patterned mask 266 can be passed through In through hole 268 will be ion implanted in donor structure 250, as described earlier in this article.Be ion implanted with respect to first process from Son, the second ion that process is ion implanted can be identical element composition or different elemental composition.As a result, in more than first region Form additional defect 259 along the face that is ion implanted 256 in 270 and in more than second region 272, do not form additional defect 259.
As shown in Figure 4 B, can using such as mask and etch processes, multiple recesses 264 be optionally formed as previously mentioned In the first first type surface 254A of donor structure 250.In the way of previously with reference to Fig. 2A description, ion can be planted by recess 264 Enter in more than first region 270 (4B as shown in the figure).In other embodiments, before second is ion implanted process, recessed Dielectric material can be set in portion 264, and the dielectric material in recess 264 can be passed through in the way of the description of previous reference picture 3B Carry out implanting ions.
After second is ion implanted process, other process with using as this paper previously reference picture 2C to Fig. 2 G can be executed Material layer 260 is transferred to host structure by described method.
In other embodiments, first be ion implanted process can as second be ion implanted process include selectivity Heterogeneous process is ion implanted.For example, Fig. 5 A shows to be ion implanted in process first and incites somebody to action along the face that is ion implanted 306 It is ion implanted in donor structure 300.As it was previously stated, donor structure 300 can include block materials 302, and there is the first master meter Face 304A and the second relative first type surface 304B.Ion can anisotropically be implanted in donor structure 300 so that more than first lacks Fall into 308 to be formed in more than second region 322 (active region can be included), and more than first region 320 will not be ion implanted In (inactive regions can be included).Although not illustrating in fig. 5, ion can be passed through the through hole in patterned mask To implant in more than second region 322 in donor structure 300, as described earlier in this article.
Reference picture 5B, first choice non-homogeneous process is ion implanted after, it is possible to use second is optionally non- Uniform ion implantation is processed is implanted additional ions by more than first region 320, and additional ions is not passed through more than second Region 322 is implanted.Ion can be implanted in donor structure 300 by the through hole 318 in patterned mask 316, such as herein first Front described.With respect to the first ion that process is ion implanted, the second ion that process is ion implanted can be identical element composition Or be different elemental compositions.As a result, form additional defect 309 along the face that is ion implanted 306 in more than first region 320, and Do not form this additional defect in more than second region 322.A defect 308 more than first, more than second defect 309 can With more extensively and/or more notable so that the weakening region that limits along the face that is ion implanted 306 in more than first region 320 compares the Relatively weaker (more easy fracture) in more than two region 322.
As shown in Figure 5 B, can be by optional for multiple recesses 312 landform using for example foregoing mask and etch processes Become in the first first type surface 304A of donor structure 300.According to the previous mode with reference to Fig. 2A description, ion can be passed through recessed Portion 312 implants in more than first region 320 (as shown in Figure 5 B).In other embodiments, process is ion implanted second Before dielectric material can be set in recess 312, and can pass through in recess 312 according to the mode of previous reference picture 3B description Dielectric material implanting ions.As shown in Figure 5 B, first choice is non-homogeneous is ion implanted process and the second non-homogeneous ion plant Entering to process to lead to ion to concentrate on the single implantation face 309 in donor structure 300.In other words, first choice is non-all Even with second non-homogeneous be ion implanted is ion implanted can implant to substantially the same depth in donor structure 300.
After second is ion implanted process, it is possible to use the method execution as described in previously reference picture 2C to Fig. 2 G herein Other process are to be transferred to host structure by material layer 310.
Herein in previously described any method, donor structure alternatively can include semiconductor-on-insulator (SeOI) type substrate (for example, silicon-on-insulator (SOI) type substrate).For example, Fig. 6 A and Fig. 6 B shows and previous reference picture 5A The method similar with the method for Fig. 5 B description, but, wherein donor structure includes semiconductor-on-insulator (SeOI) type substrate.When So, semiconductor-on-insulator (SeOI) type substrate is also utilized to execute any other method as herein described, such as referring to Fig. 6 A Description with Fig. 6 B.
Reference picture 6A, the donor structure 350 illustrating includes base substrate 390 and semiconductor material layer 392, its dielectric material The bed of material 394 is between them.In other words, described semiconductor material layer 392 is arranged on serving as a contrast with basis of dielectric materials layer 394 The relative side in bottom 390.Dielectric materials layer 394 can include alleged " buried oxide layer " (BOL) in this area it is possible to Including such as ceramic material, such as nitride (silicon nitride (for example, Si3N4)) or oxide (for example, silicon oxide (SiO2) or oxygen Change aluminum (Al2O3)).In some embodiments, described dielectric materials layer 394 can have about one micron (1 μm) or less, about The average total thickness of 500 nanometers (500nm) or less or even about 300 nanometers (300nm) or less.Described semi-conducting material Layer 392 can include such as silicon, germanium, III-V semi-conducting material (for example, GaN, GaAs, InN, AlN, InGaN etc.), or these The mixture of semi-conducting material.Described semiconductor material layer 392 can be polycrystalline, or the material that can include monocrystal. Base substrate 390 can include such as ceramic material or semi-conducting material.In some embodiments, base substrate 390 is permissible There is the composition at least with the composition basic simlarity of described semiconductor material layer 392.As previously described donor structure, apply Main structure 350 has the first first type surface 354A and the second relative first type surface 354B.
Fig. 6 A shows that multiple ions are ion implanted in process first and implants donor structure along the face that is ion implanted 306 In 350.Ion can anisotropically be implanted in donor structure 350 so that (can include active area in more than second region 372 Domain) more than first defect 358 of middle formation, and will not be ion implanted in more than first region 370 (inactive regions can be included).Though So do not illustrate in fig. 6, but as described earlier in this article, ion can implant alms giver's knot by the through hole in patterned mask In more than second region 372 in structure 350.
Reference picture 6B, first choice non-homogeneous process is ion implanted after, it is possible to use second is optionally non- Uniform ion implantation is processed is implanted additional ion by more than first region 370, and additional ion is not passed through second Multiple regions 372 are implanted.As described earlier in this article, ion can be passed through the through hole 368 in patterned mask 366 and implant alms giver In structure 350.With respect to the first ion that process is ion implanted, the second ion that process is ion implanted can become for identical element Point or for different elemental compositions.As a result, form additional defect 359 along the face that is ion implanted 356 in more than first region 370, And do not form this additional defect in more than second region 372.A defect 358 more than first, more than second defect 359 Can more extensively and/or more notable so that the weakening region ratio that limits along the face that is ion implanted 356 in more than first region 370 Relatively weaker (more easy fracture) in more than second region 372.
As shown in Figure 6B, it is possible to use for example foregoing mask and etch processes are alternatively in donor structure 350 Form multiple recesses 362 in first first type surface 354A.In the way of previous Fig. 2A description with reference to reference, ion can be passed through recess In 362 more than first regions 370 (as shown in Figure 6B) of implantation.In other embodiments, before second is ion implanted process, Dielectric material can be set in recess 362, and the dielectric in recess 362 can be passed through in the way of the description of previous reference picture 3B Material implanting ions.As described in prior embodiments, first choice is non-homogeneous to be ion implanted process and the second non-homogeneous ion Implantation processes and ion can be led to concentrate on the single implantation face 309 in donor structure 350.In other words, first choice is non- Uniform ion implantation and the second non-homogeneous being ion implanted can be implanted to substantially the same depth in donor structure 350.
After second is ion implanted process, it is possible to use the method execution as described in previously reference picture 2C to Fig. 2 G herein Other process are to be transferred to host structure by material layer 360.
Herein in previously described any method, donor structure can alternatively include at least one ion wherein Restraint layer, to help about beam ion face to be ion implanted near desired.For example, Fig. 7 A and Fig. 7 B shows and previous reference picture 6A The method similar with the method for Fig. 6 B description, but, wherein donor structure also includes ion bondage layer.It is of course also possible to utilize Donor structure including ion bondage layer executes any other method as herein described, such as retouching referring to Fig. 7 A and Fig. 7 B State.
Reference picture 7A, the donor structure 400 illustrating includes semiconductor-on-insulator (SeOI) type substrate, its lining with Fig. 6 A Bottom basic simlarity, and include base substrate 440, semiconductor material layer 442 and in base substrate 440 and semiconductor material layer Dielectric materials layer 444 between 442.Donor structure 400 also includes the ion bondage layer 446 being arranged on dielectric materials layer 444, Its side is provided with semiconductor material layer 442.In other words, ion bondage layer 446 can be buried in semiconductor material layer 442 In, or it can be arranged between semiconductor material layer 442 and dielectric materials layer 444.
Ion bondage layer 446 can include the part of such as semiconductor material layer 442, for being formed along being ion implanted The substantially weakening region in face 406 process is ion implanted before, this part is doped with such as boron, carbon or other element.Doped chemical Presence can lead to process intermediate ion restraint layer 446 in implantation and be relatively difficult by ion penetration.In other embodiments, from Sub- restraint layer 446 can include different with described semiconductor material layer 442 and relative compared with described semiconductor material layer 442 It is difficult by the material (doped or undoped) of ion penetration to be implanted.
Fig. 7 A shows that multiple ions are ion implanted in process first and implants donor structure along the face that is ion implanted 406 In 400.Ion can anisotropically be implanted in donor structure 400 so that more than first defect 408 is formed at more than second region In 422 (active region can be included), and will not be ion implanted in more than first region 420 (inactive regions can be included).Though So do not illustrate in fig. 7, but as described earlier in this article, ion can implant alms giver's knot by the through hole in patterned mask In more than second region 422 in structure 400.
Reference picture 7B, first choice non-homogeneous process is ion implanted after, it is possible to use second is optionally non- Uniform ion implantation is processed is implanted additional ion by more than first region 420, and additional ion is not passed through second Multiple regions 422 are implanted.As described earlier in this article, ion can be passed through the through hole 418 in patterned mask 416 and implant alms giver In structure 400.With respect to the first ion that process is ion implanted, the second ion that process is ion implanted can become for identical element Point or for different elemental compositions.As a result, form additional defect 409 along the face that is ion implanted 406 in more than first region 420, And do not form this additional defect in more than second region 422.A defect 408 more than first, more than second defect 409 Can more extensively and/or more notable so that the weakening region ratio that limits along the face that is ion implanted 406 in more than first region 420 Relatively weaker (more easy fracture) in more than second region 422.
As shown in Figure 7 B, it is possible to use for example foregoing mask and etch processes are alternatively in donor structure 400 Formed multiple recesses 412 in first first type surface 404A.Ion can be passed through recessed in the way of previous Fig. 2A description with reference to reference Portion 412 implants in more than first region 420 (as shown in Figure 7 B).In other embodiments, process is ion implanted second Before dielectric material can be set in recess 412, and can in the way of the description of previous reference picture 3B by recess 412 in Jie Electric material implanting ions.As described in prior embodiments, first choice is non-homogeneous be ion implanted process and second non-homogeneous from Sub- implantation processes and ion can be led to concentrate on the single implantation face 409 in donor structure 400.In other words, first choice Non-homogeneous with second non-homogeneous be ion implanted is ion implanted can implant to substantially the same depth in donor structure 400.
After second is ion implanted process, it is possible to use the method execution as described in previously reference picture 2C to Fig. 2 G herein Other process are to be transferred to host structure by material layer 410.
Its intermediate ion as herein described by recess implant donor structure in any method in, by ion pass through recessed Before in portion's implantation donor structure, dielectric sidewall spacers can be alternatively set in the recess in donor structure, with effort Prevent stray ion enter donor structure in the horizontal in the region of recess.Describe this referring to Fig. 8 A to Fig. 8 E The example embodiment of method.
Reference picture 8A, shows donor structure 500.Donor structure 500 is similar to the donor structure 150 of Fig. 2A, and includes The multiple recesses in the block materials 552 of donor structure 500 are formed at by the through hole 566 in patterned mask 568 564.Patterned mask 568 can include such as such as silicon nitride (Si3N4) layer of nitride material.Block materials 552 can have There are the first first type surface 554A and the second relative first type surface 554B.As shown in Figure 8 A, recess 564 can be formed at the first first type surface In 554.
Reference picture 8B, after forming recess 564, in the first first type surface 554A (bag of mask 568 and block materials 552 Include the lateral sidewall surface exposing in recess 564 and lower surface) on can deposit one or more conformal layer of material.This one Individual or multiple conformal layer of material can include such as one or more layers dielectric material.For example, the first conforma layer 569A can form sediment Amass on the surface exposed of the block materials 552 in mask 568 and recess 564, and the second conforma layer 569B can deposit On the first conforma layer 569A, as shown in Figure 8 B.Second conforma layer 569B can have the material group with the first conforma layer 569A Become different material compositions, thus allowing to be etched selectively to the second conforma layer 569B and not etching the first conforma layer 569A, such as Discussed below.As non-limiting example, the first conforma layer 569A can include such as oxide material (such as silicon oxide (SiO2)), the second conforma layer 569B can include such as nitride material (such as silicon nitride (Si3N4)).
As shown in Figure 8 C, it is possible to use anisotropic etching processes and to etch the second conforma layer 569B, and it can include nitrogen Compound, thus removing the lateral extensions of the second conforma layer 569B and substantially not removing vertically prolonging of the second conforma layer 569B The region stretched.Therefore, as shown in Figure 8 C, only retain in the lateral sidewalls being arranged in recess 564 of the second conforma layer 569B Region, and the first conforma layer 569A is exposed on the first type surface 554A of the lower surface in recess 564 and donor structure 550. By way of example, and not limitation, it is possible to use dry plasma etch processes (for example, reactive ion etching (RIE) place Reason) being etched anisotropically through the second conforma layer 569B.
After being etched anisotropically through the second conforma layer 569B, it is possible to use another etch processes are conformal to remove first The part that the lower surface in recess 564 of layer 569A (can include oxide) is exposed.It is, for example possible to use wet chemistry erosion Quarter is processed to etch the region exposed of the first conforma layer 569A, obtains the structure shown in Fig. 8 D.Etch processes can also remove The region of the first first type surface 554A of the covering donor structure 550 of the first conforma layer 569A.As in fig. 8d, in recess 564 Block materials 552 are exposed in bottom.When block materials 552 expose in the bottom of recess 564, as in fig. 8d, spacer structure 574 can be retained in the lateral sidewalls in recess 564.These spacer structures 574 can include one or more conforma layers The part of 569A, 569B.
Therefore, after block materials 552 are exposed in the bottom of recess 564, can be by multiple ions along face be ion implanted In 556 implantation donor structure 550.Ion anisotropically can be implanted in donor structure 550, so that in more than first region Form defect in 570 (inactive regions can be included), and more than second region 572 will not be ion implanted and (active area can be included Domain) in.In process is ion implanted, spacer structure 574 be also prevented from ion entered by the side wall in recess 564 wait turn In the active region 572 of material layer 560 moving.Face 556 is ion implanted can include single implantation face, wherein greatly shown in Fig. 8 D Most ions are arranged along single face in donor structure 550.In other words, the ion of great majority implantation is in donor structure 550 In concentrate on single depth.
Reference picture 8E, the ion of implantation can lead to be formed along the face that is ion implanted 556 in more than first region 570 and lack Fall into 558.After process is ion implanted, it is possible to use such as one of etch processes and chemically mechanical polishing (CMP) process Or more kinds of remove one or more conforma layer 569A, 569B (for example, spacer structure 574) from donor structure 550 and cover The remainder of mould 568 (Fig. 8 D), to form the structure shown in Fig. 8 E.Structure shown in Fig. 8 E is approximately similar to shown in Fig. 2 B Structure, and also can process further as described in previously reference picture 2C-2G herein.Can also according to herein by reference to Fig. 3 A and Between any method described in Fig. 3 B, Fig. 4 A and Fig. 4 B, Fig. 5 A and Fig. 5 B, Fig. 6 A and Fig. 6 B and Fig. 7 A and Fig. 7 B forms and adopts Isolator structure (as the spacer structure 574 of Fig. 8 D).

Claims (13)

1. a kind of method that from the first donor structure, semiconductor material layer is transferred to the second structure, the method includes following step Suddenly：
To be ion implanted in the first donor structure, to form the general planar being limited by the ion implanted in the first donor structure Weakening region, the weakening region of this general planar by the described semiconductor material layer of the first donor structure and the first donor structure its Remaining be partially separated, wherein at least one party in the elemental composition of ion of the concentration of the ion of implantation and implantation is entirely substantially flat Change along at least one direction of the weakening region parallel to described general planar on smooth weakening region, wherein, ion is planted Enter in the first donor structure and included with forming the step of the weakening region of described general planar：By the of described semiconductor material layer More than one region being ion implanted the first concentration in the first donor structure；And pass through more than the second of described semiconductor material layer Individual region is ion implanted the second concentration lower than described first concentration in the first donor structure；
Described first donor structure is bonded to described second structure；And
Weakening region along described general planar makes the first donor structure fracture, and stays and be bonded to the described of the second structure and partly lead Body material layer.
2. method according to claim 1, methods described is further comprising the steps of：
Select described more than first region of the described semiconductor material layer inactive regions to include described semiconductor material layer；With And
Select described more than second region of the described semiconductor material layer active region to include described semiconductor material layer.
3. method according to claim 1, wherein will be ion implanted in the first donor structure to form the weak of general planar The step changing area includes：
The ion of the first elemental composition is implanted in the first donor structure by more than first region of described semiconductor material layer； And
The first alms giver is implanted in more than second region that the ion of different second element compositions is passed through described semiconductor material layer In structure.
4. method according to claim 3, methods described is further comprising the steps of：
Select described more than first region of the described semiconductor material layer inactive regions to include described semiconductor material layer；With And
Select described more than second region of the described semiconductor material layer active region to include described semiconductor material layer.
5. method according to claim 1, wherein, the step being ion implanted in the first donor structure is included leading to ion Through hole in transmission from one meridian to another patterned mask is implanted in the first donor structure.
6. method according to claim 1, methods described is further comprising the steps of：
Before being ion implanted in the first donor structure, the first type surface of the first donor structure forms recess；And wherein, The step being ion implanted in the first donor structure is included the surface implantation that ion is passed through the first donor structure in recess In one donor structure, and not by the non-sunk area that the first type surface of the first donor structure is ion implanted.
7. method according to claim 1, wherein, the step being ion implanted in the first donor structure is included：
Execution one is ion implanted process to apply the ion of the first amount in the weakening region of described general planar whole first Implanted in the first donor structure with substantially homogeneous concentration in main structure；And
Execution is another to be ion implanted process to apply the ion of the second amount in the weakening region of described general planar whole first Implanted in the first donor structure with the concentration of change in main structure.
8. method according to claim 7, methods described is further comprising the steps of：
Execute one be ion implanted process with by being ion implanted in the first donor structure of described first amount after, the Form recess in the first type surface of one donor structure；And
Wherein, execute another step that process is ion implanted to include the ion of described second amount passes through the first alms giver in recess The surface of structure is implanted in the first donor structure, and not by the first type surface that first donor structure is ion implanted of described second amount In non-sunk area.
9. a kind of semiconductor structure, this semiconductor structure includes：
First donor structure, has a weakening region of general planar in this first donor structure, the weakening region of described general planar by Limited by the ion of the weakening region implantation along described general planar in this first donor structure, the reduction of this general planar The semiconductor material layer of the first donor structure is separated by area with the remainder of the first donor structure, the concentration of the ion of implantation and Implantation the elemental composition of ion at least one party the weakening region of entirely described general planar along parallel to described substantially Change at least one direction of flat weakening region；And
Second structure, this second structure is bonded to the described semiconductor material layer of the first donor structure,
Wherein, the weakening region of described general planar includes wherein having the implantation of the first concentration more than first region of ion and Wherein there is more than second region of the ion of the implantation of the second concentration, second concentration ratio the first concentration is high.
10. semiconductor structure according to claim 9, wherein, the weakening region of described general planar includes：First Duo Ge area The ion in domain, wherein implantation has the first elemental composition；And more than second region, the ion of wherein implantation has and described The different second element composition of one elemental composition.
11. semiconductor structures according to claim 9, this semiconductor structure also includes：Recess in first donor structure, Wherein, in the weakening region of described general planar vertically in the region above described recess, with respect to described In the weakening region of general planar vertically in the space being laterally located between described recess in the first donor structure The region of top, the concentration of the ion of implantation is different with least one party in the elemental composition of the ion of implantation.
12. semiconductor structures according to claim 11, described semiconductor structure also includes：Horizontal stroke in described recess Spacer structure on the wall of side.
13. semiconductor structures according to claim 9, described semiconductor structure also includes：In the first donor structure Be roughly parallel to described general planar weakening region extend at least one ion bondage layer.
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