CN104388725A - Preparation method of high-performance SiC/Al composite material used for electronic packaging - Google Patents
Preparation method of high-performance SiC/Al composite material used for electronic packaging Download PDFInfo
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Abstract
The invention relates to the field of electronic packaging materials and in particular relates to a preparation method of a high-performance SiC/Al composite material used for electronic packaging. The preparation method is characterized by comprising the following steps: a, mixing: mixing SiC powder with Al powder; b, preparing a blank: pressing the powder into a cylindrical blank; c, sintering: carrying out sintering and hot-pressing on the cylindrical blank at high temperature; and d, semisolid thixotropy: carrying out semisolid thixotropy treatment on the blank subjected to sintering treatment, thus obtaining the SiC/Al composite material. The novel SiC/Al composite material preparation process with the advantages of short flow, easy control and low cost is developed by utilizing the characteristic of solid-liquid separation during semisolid thixocasting. The volume fraction of SiC particles can be 72vol.%.
Description
Technical field
The present invention relates to electronic package material field, particularly relate to the preparation method of the high SiC/Al matrix material used for electronic packaging of a kind of performance.
Background technology
The development of semiconductor technology is maked rapid progress, since the first block semiconductor unicircuit in 1958 comes out, up to the present, the development of IC chip integration is more and more higher, power is increasing, and the raising of integrated level must cause the rising of its heat generation rate, makes the working temperature of circuit constantly increase, thus cause the increase of part failure rate, therefore all one's effort is studied and is prepared the novel encapsulated material with high thermal conductance and good over-all properties and seems particularly important.
In order to meet the requirement of high-density, miniaturization, high-power integrated circuit, desirable electronic package material must possess following characteristic: (1) has higher thermal conductivity, the heat that semi-conductor chip is operationally produced can be distributed in time, in order to avoid chip temperature is too high and lost efficacy; (2) there is lower thermal expansivity, and match, in order to avoid chip is because of thermal stress damage with chips such as Si or GaAs; (3) there are enough strength and stiffness, support and provide protection can be played to chip; (4) there is good resistance to air loss, stop steam, harmful ion or gas in environment to enter in packing component, cause the failure modes such as Parameters variation; (5) require that density is little as far as possible, as aerospace applications, lightweight mobile communication equipment at some special occasions; (6) cost is low as far as possible, to meet large-scale commercial application.
SiC/Al matrix material combines low bulk, the high strength of the low density of Al collective, high thermal conductivity and SiC, there is the feature performance benefits such as lightweight, high heat conduction, low-thermal-expansion and high specific strength, specific rigidity, Young's modulus, and adjust the coefficient of expansion by SiC volume fraction, realize mating, in microblogging unicircuit, power model and the field widespread use such as micro-process cover plate and heating panel with GaAs chip and the heat being oxidized Al substrate.
But there is the shortcomings such as product density is low, raw material losses large, the volume fraction of SiC enhanced granule is restricted in the preparation method of associated materials at present, and be not suitable for low cost batch production.
Summary of the invention
The object of the invention is to address the deficiencies of the prior art, the preparation method of the SiC/Al matrix material used for electronic packaging providing a kind of performance high.
For realizing the object of the invention, the technical solution used in the present invention is as follows:
A preparation method for the SiC/Al matrix material used for electronic packaging that performance is high, is characterized in that comprising the following steps:
A. mix: SiC powder is mixed with Al powder;
B. base: above-mentioned powder compression is become green body cylinders;
C. sinter: green body cylinders is at high temperature carried out sinter, hot pressing;
D. Semi-Solid Thixoforming: by the base substrate after above-mentioned sintering processes through Semi-Solid Thixoforming process, to obtain final product.
Further, in described a. mixing step, SiC powder and Al powder volume ratio are 3:(7.5 ~ 8.5).
Further, in described b. base step, be pressed into green body cylinders and adopt 220 ~ 250Mpa pressing pressure.
Further, in described c. sintering step, adopt 460 ~ 480 DEG C to process 15 ~ 20min, then the sintering processing of 620 ~ 650 DEG C of process 65 ~ 80min, and adopt 650 ~ 700 DEG C, the parameter of 135 ~ 150Mpa carries out hot-pressing processing.
Further, in described d. Semi-Solid Thixoforming step, Semi-Solid Thixoforming process adopts 780 ~ 800 DEG C, the texturing temperature of 130 ~ 140Mpa, 8 ~ 8.5mm/s, rock deformation pressure and Deformation velocity parameter.
The present invention utilizes Semi-Solid Thixoforming process, when being in liquid, when Gu the mixed system of two-phase coexistent is subject to External Force Acting, the liquid phase of material internal and solid phase just there will be and flow respectively, the tendency of general liquid phase flow is greater than solid phase, when external force is increased to a certain degree, liquid phase will aggravate flowing, cause liquid, Gu two-phase is separated, liquid phase Al discharges from the gap of solid phase SiC particle, along with the aggravation of pressure, Al liquid can carry part small-particle SiC and separate from the gap of mould and flow in the filtrate receiver of volume quantitative, and most of solid SiC particle plan is assembled in mould, SiC/Al can be obtained and meet material.
The invention provides a kind of feature of solid-liquid separation when utilizing semisolid pressure casting thixotroping, develop the SiC/Al composite material preparation process of a kind of novel short route, easily manipulation, low cost, the volume fraction of SiC particle can reach 72vol.%.
Embodiment
Below in conjunction with embodiment, the present invention will be further described.
A preparation method for the SiC/Al matrix material used for electronic packaging that performance is high, is characterized in that comprising the following steps:
A. mix: SiC powder is mixed with Al powder;
B. base: above-mentioned powder compression is become green body cylinders;
C. sinter: green body cylinders is at high temperature carried out sinter, hot pressing;
D. Semi-Solid Thixoforming: by the base substrate after above-mentioned sintering processes through Semi-Solid Thixoforming process, to obtain final product.
In described a. mixing step, SiC powder and Al powder volume ratio are 3:8.2.
In described b. base step, be pressed into green body cylinders and adopt 240Mpa pressing pressure.
In described c. sintering step, adopt 475 DEG C to process 15min, then the sintering processing of 630 DEG C of process 70min, and adopt 680 DEG C, the parameter of 135Mpa carries out hot-pressing processing.
In described d. Semi-Solid Thixoforming step, Semi-Solid Thixoforming process adopts 800 DEG C, the texturing temperature of 135Mpa, 8.5mm/s, rock deformation pressure and Deformation velocity parameter.
Claims (5)
1. a preparation method for the SiC/Al matrix material used for electronic packaging that performance is high, is characterized in that comprising the following steps:
A. mix: SiC powder is mixed with Al powder;
B. base: above-mentioned powder compression is become green body cylinders;
C. sinter: green body cylinders is at high temperature carried out sinter, hot pressing;
D. Semi-Solid Thixoforming: by the base substrate after above-mentioned sintering processes through Semi-Solid Thixoforming process, to obtain final product.
2. the preparation method of the SiC/Al matrix material used for electronic packaging that a kind of performance according to claim 1 is high, is characterized in that: in described a. mixing step, SiC powder and Al powder volume ratio are 3:(7.5 ~ 8.5).
3. the preparation method of the SiC/Al matrix material used for electronic packaging that a kind of performance according to claim 1 is high, is characterized in that: in described b. base step, is pressed into green body cylinders and adopts 220 ~ 250Mpa pressing pressure.
4. the preparation method of the SiC/Al matrix material used for electronic packaging that a kind of performance according to claim 1 is high, it is characterized in that: in described c. sintering step, 460 ~ 480 DEG C are adopted to process 15 ~ 20min, the sintering processing of 620 ~ 650 DEG C of process 65 ~ 80min again, and adopt 650 ~ 700 DEG C, the parameter of 135 ~ 150Mpa carries out hot-pressing processing.
5. the preparation method of the SiC/Al matrix material used for electronic packaging that a kind of performance according to claim 1 is high, it is characterized in that: in described d. Semi-Solid Thixoforming step, Semi-Solid Thixoforming process adopts 780 ~ 800 DEG C, 130 ~ 140Mpa, the texturing temperature of 8 ~ 8.5mm/s, rock deformation pressure and Deformation velocity parameter.
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105463266A (en) * | 2015-12-22 | 2016-04-06 | 中国航空工业集团公司北京航空材料研究院 | Electronic packaging material |
| CN105458254A (en) * | 2015-06-17 | 2016-04-06 | 黛博拉·D·L·钟 | Thixotropic liquid metal base fluid, laminated plate, and metal construction forming method thereof |
| CN105506402A (en) * | 2015-12-22 | 2016-04-20 | 中国航空工业集团公司北京航空材料研究院 | Electronic packaging material |
| CN105543576A (en) * | 2015-12-22 | 2016-05-04 | 中国航空工业集团公司北京航空材料研究院 | Electronic encapsulating material |
| CN105543577A (en) * | 2015-12-22 | 2016-05-04 | 中国航空工业集团公司北京航空材料研究院 | Electronic packaging material |
| CN105568068A (en) * | 2015-12-22 | 2016-05-11 | 中国航空工业集团公司北京航空材料研究院 | Electronic packaging material preparation method |
| CN105568066A (en) * | 2015-12-22 | 2016-05-11 | 中国航空工业集团公司北京航空材料研究院 | Electronic packaging material preparation method |
| CN105568067A (en) * | 2015-12-22 | 2016-05-11 | 中国航空工业集团公司北京航空材料研究院 | Electronic packaging material |
| CN105603262A (en) * | 2015-12-22 | 2016-05-25 | 中国航空工业集团公司北京航空材料研究院 | Preparation method of electronic packaging material |
| CN105624509A (en) * | 2015-12-22 | 2016-06-01 | 中国航空工业集团公司北京航空材料研究院 | Preparing method of electronic packaging material |
| CN107540378A (en) * | 2017-08-25 | 2018-01-05 | 巩义市泛锐熠辉复合材料有限公司 | A kind of preparation method of carborundum/aluminium composite material |
| CN108315629A (en) * | 2018-02-13 | 2018-07-24 | 济南大学 | A kind of preparation method of Al/SiC ceramic-metal composites |
| CN115819110A (en) * | 2022-12-16 | 2023-03-21 | 深圳市吉迩技术有限公司 | Metallized porous ceramic composite material and preparation method thereof |
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| CN105458254A (en) * | 2015-06-17 | 2016-04-06 | 黛博拉·D·L·钟 | Thixotropic liquid metal base fluid, laminated plate, and metal construction forming method thereof |
| US9993996B2 (en) * | 2015-06-17 | 2018-06-12 | Deborah Duen Ling Chung | Thixotropic liquid-metal-based fluid and its use in making metal-based structures with or without a mold |
| CN105458254B (en) * | 2015-06-17 | 2018-03-02 | 黛博拉·D·L·钟 | Thixotroping formula liquid metal matrix fluid, laminate and its hardware forming method |
| CN105543577A (en) * | 2015-12-22 | 2016-05-04 | 中国航空工业集团公司北京航空材料研究院 | Electronic packaging material |
| CN105568068A (en) * | 2015-12-22 | 2016-05-11 | 中国航空工业集团公司北京航空材料研究院 | Electronic packaging material preparation method |
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| CN105624509A (en) * | 2015-12-22 | 2016-06-01 | 中国航空工业集团公司北京航空材料研究院 | Preparing method of electronic packaging material |
| CN105463266A (en) * | 2015-12-22 | 2016-04-06 | 中国航空工业集团公司北京航空材料研究院 | Electronic packaging material |
| CN105543576A (en) * | 2015-12-22 | 2016-05-04 | 中国航空工业集团公司北京航空材料研究院 | Electronic encapsulating material |
| CN105506402A (en) * | 2015-12-22 | 2016-04-20 | 中国航空工业集团公司北京航空材料研究院 | Electronic packaging material |
| CN107540378A (en) * | 2017-08-25 | 2018-01-05 | 巩义市泛锐熠辉复合材料有限公司 | A kind of preparation method of carborundum/aluminium composite material |
| CN107540378B (en) * | 2017-08-25 | 2020-06-12 | 巩义市泛锐熠辉复合材料有限公司 | Preparation method of silicon carbide/aluminum composite material |
| CN108315629A (en) * | 2018-02-13 | 2018-07-24 | 济南大学 | A kind of preparation method of Al/SiC ceramic-metal composites |
| CN115819110A (en) * | 2022-12-16 | 2023-03-21 | 深圳市吉迩技术有限公司 | Metallized porous ceramic composite material and preparation method thereof |
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Inventor after: Tong Dawang Inventor before: Jiang Dawei Inventor before: Jiang Jie Inventor before: Zhang Xiaoxiao Inventor before: Mao Zongning |
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Effective date of registration: 20170629 Address after: 529000 Guangdong province Jiangmen Jianghai 17 Keyuan Road, building B1, first floor (by one) Patentee after: Jiangmen Linuo Circuit Technology Co. Ltd. Address before: 610000 Sichuan Province, Chengdu hi tech Zone, Kyrgyzstan, No. five, No. 118, No. 3, building No. 2 layer Patentee before: CHENGDU MINGRI XINGCHEN TECHNOLOGY CO., LTD. |
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