CN104716183A - 具有圆柱形区域的纵向晶体管器件结构 - Google Patents

具有圆柱形区域的纵向晶体管器件结构 Download PDF

Info

Publication number
CN104716183A
CN104716183A CN201410776936.3A CN201410776936A CN104716183A CN 104716183 A CN104716183 A CN 104716183A CN 201410776936 A CN201410776936 A CN 201410776936A CN 104716183 A CN104716183 A CN 104716183A
Authority
CN
China
Prior art keywords
region
cylindrical
field plate
power transistor
transistor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201410776936.3A
Other languages
English (en)
Other versions
CN104716183B (zh
Inventor
S·S·吉奥吉斯库
W·B·格拉博斯基
K·R·瓦拉达拉延
L·朱
K-C·R·杨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Power Integrations Inc
Original Assignee
Power Integrations Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Power Integrations Inc filed Critical Power Integrations Inc
Publication of CN104716183A publication Critical patent/CN104716183A/zh
Application granted granted Critical
Publication of CN104716183B publication Critical patent/CN104716183B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66666—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure

Abstract

本发明涉及具有圆柱形区域的纵向晶体管器件结构。一种纵向功率晶体管器件包括第一导电类型的半导体层，具有位于所述半导体层中的多个圆柱形电介质区域。所述圆柱形电介质区域在纵向方向上从所述半导体层的顶部表面向下延伸。相邻的圆柱形电介质区域沿着一个公共直径轴线被半导体层的具有第一宽度的窄区域横向隔开。每个电介质区域具有位于其中央的圆柱形导电场板构件，所述圆柱形导电场板构件在所述纵向方向上从所述顶部表面向下延伸至所述电介质区域的底部附近。所述电介质区域将所述圆柱形导电场板构件与所述窄区域横向隔开。一个源极区域位于所述顶部表面，一个漏极区域位于所述半导体层的底部。

Description

具有圆柱形区域的纵向晶体管器件结构
相关申请的交叉参引
本申请要求享有于2013年12月13日提交的标题为“VerticalTrans is tor Device Structure Wi th Cylindrically-Shaped Regions”的美国临时专利申请序列号No.61/915，772的优先权和权益，该美国临时专利申请以整体引用的方式纳入本文。
技术领域
本公开内容涉及制造在硅衬底中的半导体器件。更具体地，本发明涉及能够承受高电压的纵向场效应晶体管器件结构。
背景技术
高电压场效应晶体管(HVFET)也被称作功率晶体管，在半导体领域是众所周知的。通常，HVFET包括纵向晶体管器件结构，该纵向晶体管器件结构包括一个延伸的漏极区域，当该器件处于“断开(off)”状态时该延伸的漏极区域支持施加的高电压。此类型的HVFET通常被用在功率转换应用中，诸如，用于离线电源、马达控制等的AC/DC转换器。这些功率晶体管器件可以在高电压下被切换，并能够在“断开”状态实现高阻塞电压，同时使得在“导通(on)”状态时漏极和源极之间的电流流动的阻力最小，该阻力通常被称作特定导通电阻(Rdson)。
发明内容
根据本发明的第一方面，提供一种纵向功率晶体管器件，包括：
第一导电类型的半导体层；
多个圆柱形电介质区域，位于所述半导体层中，所述圆柱形电介质区域在纵向方向上从所述半导体层的顶部表面向下延伸，相邻的圆柱形电介质区域沿着一个公共直径轴线被所述半导体层的具有第一宽度的窄区域横向隔开；
每个圆柱形电介质区域具有位于其中央的圆柱形导电场板构件，所述圆柱形导电场板构件在所述纵向方向上从所述顶部表面向下延伸至所述圆柱形电介质区域的底部附近，所述圆柱形电介质区域将所述圆柱形导电场板构件与所述窄区域横向隔开；
所述第一导电类型的源极区域，位于所述窄区域的顶部表面处；以及
所述第一导电类型的漏极区域，位于所述半导体层下方。
根据本发明的第二方面，提供一种高电压晶体管，包括：
一个衬底；
一个阵列的圆柱形电介质区域，位于所述衬底中并被布置成三角形布局，每个圆柱形电介质区域在纵向方向上从所述半导体层的顶部表面向下延伸，相邻的圆柱形电介质区域沿着一个公共直径轴线被所述衬底的具有第一宽度的窄区域横向隔开；
每个圆柱形电介质区域具有位于其中央的圆柱形导电场板构件，所述圆柱形导电场板构件在所述纵向方向上从所述顶部表面向下延伸至所述圆柱形电介质区域的底部附近，所述圆柱形电介质区域将所述圆柱形导电场板构件与所述窄区域横向隔开；
一个源极，位于所述窄区域的顶部表面处；以及
一个漏极，位于所述衬底的底部处。
根据本发明的第三方面，提供一种方法，包括：
在第一导电类型的半导体衬底中形成被所述半导体衬底的窄区域横向隔开的多个第一圆柱形沟槽和多个第二圆柱形沟槽，每个所述圆柱形沟槽在纵向方向上从所述半导体衬底的顶部表面向下延伸；
用电介质材料填充每个所述圆柱形沟槽的至少一部分；
在所述第一圆柱形沟槽的所述电介质材料中形成导电材料的第一圆柱形场板，在所述第二圆柱形沟槽的所述电介质材料中形成导电材料的第二圆柱形场板，所述第一场板位于所述第一圆柱形沟槽中央，所述第二场板位于所述第二圆柱形沟槽中央，所述第一场板从所述半导体衬底的顶部表面附近纵向向下延伸到所述第一圆柱形沟槽的底部附近，所述第二场板从所述半导体衬底的顶部表面附近纵向向下延伸到所述第二圆柱形沟槽的底部附近；
在所述窄区域的上部中形成源极区域和体区，所述源极区域是所述第一导电类型并且所述体区是所述第一导电类型相对(opposite)的第二导电类型，所述体区将所述源极与所述窄区域的下部隔开，所述窄区域的所述下部包括漂移区域；以及
形成嵌入在所述电介质材料中、邻近所述体区的栅极，所述栅极与所述体区、所述第一场板和所述第二场板绝缘(insulate)。
附图说明
参照附图描述本发明的非限制性和非穷举性实施方案，其中，除非另有指定，否则在所有多种附图中相同的参考数字指代相同的部分。
图1是具有圆柱形区域的示例纵向晶体管器件结构的截面立体视图。
图2是图1中示出的纵向晶体管器件结构的示例布局的俯视图。
图3A是沿切割线A-A’截取的图2中示出的纵向晶体管器件结构布局的一个实施方案的示例截面侧视图。
图3B是沿切割线A-A’截取的图2中示出的纵向晶体管器件结构布局的另一个实施方案的示例截面侧视图。
图4是图3A的实施方案的截面侧视图，其中曲线图例示了器件的不同区域中的电场(E场)分布。
图5A-图5B例示了一个仿真结果，该仿真结果示出对于一个示例纵向晶体管器件对于不同掺杂和电压条件，电势等值线与距离的关系。
在附图的所有若干视图中，相应的参考字符指示相应的部件。本领域技术人员将理解，图中的元件是为了简化和清楚而例示的从而不必按比例绘制。例如，图中的某些元件的尺度相对于其它元件可能被夸大，以有助于更好地理解本发明的多种实施方案。另外，为了便于较少地遮挡本发明的这些多种实施方案的示图，通常不描绘出在商业上可行的实施方案中有用的或必需的通用但熟知的元件。
具体实施方式
在下面的描述中阐述了许多具体的细节，以提供对本发明的透彻理解。然而，本领域的普通技术人员应明了，不需要采用具体细节来实践本发明。在其它实例中，为了避免模糊本发明，没有详细描述公知的系统、器件或方法。
贯穿本说明书引用的“一个实施方案”、“一实施方案”、“一个实施例”或者“一实施例”意味着针对该实施方案或实施例描述的具体特征、结构或者特性包括在本发明的至少一个实施方案中。因此，在贯穿本说明书的各个位置出现的措辞“在一个实施方案中”、“在一实施方案中”、“一个实施例”或“一实施例”未必全部指的是相同的实施方案或实施例。此外，所述具体特征、结构或特性可以通过任何合适的组合和/或子组合被合并在一个或多个实施方案或实施例中。特定特征、结构或特性可被包括在集成电路、电子电路、组合逻辑电路或提供描述的功能的其它合适的部件中。另外，应理解，随此提供的附图用于向本领域普通技术人员进行解释的目的，并且所述附图未必按比例绘制。
出于本公开内容的目的，“接地”或“接地电势”指的是参考电压或参考电势，相对于该参考电压或参考电势来限定或测量电路或集成电路(IC)的所有其它电压或电势。
描述了具有圆柱形区域的纵向功率晶体管器件结构。该纵向功率晶体管器件结构具有低的特定导通状态电阻并且在断开状态时支持高电压。在其它实施方案中，相同的器件结构和布局可被用于实现各种不同的器件，包括P-N二极管、高电压肖特基二极管、结型场效应晶体管(JFET)、绝缘栅双极型晶体管(IGBT)等。
该高电压纵向功率晶体管可利用场板，该场板有助于重新成形中央半导体柱或台面周围的电场从而增大击穿电压。在本申请中描述的纵向功率晶体管器件中的不同区域的圆柱形结构允许具有增加的电压额定值的紧凑尺寸和对硅体积的有效利用。
图1是具有圆柱形区域的纵向晶体管器件100的示例截面立体视图。图1的纵向晶体管器件结构包括位于半导体层105(例如，硅)中的多个圆柱形电介质区域130(例如，氧化物)，在一个实施方案中半导体层105包括n型外延层。位于每个区域130(例如，氧化物电介质区域)中央并且与半导体层105完全绝缘的是圆柱形导电场板构件150，在一个实施方案中，圆柱形导电场板构件150包括多晶硅。应注意，圆柱形电介质区域130被布置成由相互偏移的相邻行组成的布局，使得在沿着区域130的电介质材料和层105的半导体材料之间的侧壁界面的所有点处，任何两个相邻的圆柱形电介质区域130之间的横向距离是相等的，如通过虚线155A、155B和155C的相等长度所例示的。
如图1中示出的，圆柱形电介质区域130在纵向方向上从半导体层105的顶部表面朝向衬底(未示出)向下延伸。圆柱形电介质区域130的相邻的圆柱形电介质区域沿着一个公共直径轴线(commondiametrical axis)被半导体层105的窄区域横向隔开。隔开每对相邻的电介质区域130的该窄区域的横向宽度在沿着纵向向下延伸的氧化物-硅界面的所有点处是恒定的。在一个实施方案中，此窄区域包括由外延工艺形成的纵向功率场效应晶体管的延伸的漏极或漂移区域。漂移区域、电介质层130和场板构件150共同包括在横向方向上延伸的一个平行分层结构，该横向方向垂直于在导通状态时电流流动的方向。
应注意，在图1中示出的器件结构100中，任意三个最近的横向相邻的电介质区域130包括三个一组的圆柱形电介质区域，即，任意三个最近的圆柱形电介质区域130的布局被布置成三角形图案。图1以从三个最近的场板构件150的中心连接的、形成等边三角形的相等长度虚线155A、155B和155C示出了此三角形布局布置。
在一个实施方案中，通过首先将深沟槽蚀刻到半导体层105中可形成每个圆柱形电介质区域130。然后用电介质材料(例如，二氧化硅)填充所述沟槽。通过类似的掩模、蚀刻和填充步骤可形成圆柱形场板构件150。在图1的实施例中，MOSFET器件源极电极可位于半导体层105的顶部表面上，并且漏极电极可位于半导体层105的底部表面上。
图2是图1中示出的纵向晶体管器件结构的示例布局200的俯视图。在此视图中，一个阵列的圆柱形电介质区域230以偏移行的方式布置在半导体层(例如，硅)的顶部表面(源极)220范围内。圆柱形场板构件250位于每个圆柱形电介质区域230的中心。布局200还示出每个圆柱形电介质区域230还包括位于其中的沟槽中、在半导体材料和圆柱形导电场板构件250之间的横向延伸的环形栅极构件240。薄栅极氧化物将栅极构件240与半导体层的顶部表面220隔开。
本领域技术人员应理解，在不同的实施方案中，栅极构件240可以是形成在顶部表面220的多个部分上的平面栅极构件，该平面栅极构件具有将每个栅极构件240与半导体层隔开的薄的电介质层(例如，二氧化硅)。
如图2中示出的，在每三个相邻的圆柱形电介质区域230之间形成一个相对大的硅区域(虚线210所标注)。每个定位在内部的圆柱形电介质区域230被六个其它圆柱形电介质区域230和绕着每个圆柱形电介质区域230位于不同横向方向上的六个窄导电沟道所围绕。在某些实施方案中，由虚线210标示的硅区域可被蚀刻成沟槽并被填充有电介质材料(例如，氧化物、氮化物等)。这些附加的填充有电介质的沟槽可以是圆柱形形状，从顶部表面220纵向向下延伸到体半导体层材料(例如，硅)的部分深度内。
图3A是图2中示出的纵向晶体管器件结构布局的一个实施方案的示例截面侧视图，该侧视图是沿单行圆柱形电介质区域330的切割线A-A’截取的。在此实施例中，每个栅极构件340均被示为沟槽栅极构件，该沟槽栅极构件在纵向方向上从电介质材料(氧化物)的顶部表面向下延伸到恰在横向相邻的p型体区(body region)360的底部下方的深度。每个体区360位于N+源极区域(顶部表面)320下方。体区360因此将源极区域320与硅柱(silicon pillar)305的延伸的漏极或漂移区域纵向隔开。在示出的实施方案中，示出了电介质区域330，该电介质区域包括将栅极构件340与场板构件350隔开的相对厚的内部电介质区域330A以及使得每个栅极构件340(例如，多晶硅)与包括源极区域320、P体区360和柱305的半导体材料充分绝缘的相对薄的层(例如，氧化物)330B。
在图3A中，导电场板构件350位于圆柱形电介质区域330的中心的中央。环形栅极构件340位于半导体材料(区域320、360和305)和圆柱形场板构件350之间的电介质区域330中。如示出的，通过在每个电介质区域330下方横向延伸的硅材料连接硅柱305。N+掺杂的漏极区域370位于硅柱305的底部下方。在某些实施方案中，通过分级外延工艺形成硅柱中的掺杂浓度，使得漂移区域中的掺杂浓度随着从恰在体区360下方下降到靠近N+掺杂漏极区域370的纵向深度而增加。
在图3A中示出的纵向功率晶体管的正常导通状态操作期间，控制信号被施加到栅极构件340。作为响应，沿着P体区360的侧部形成纵向导电沟道区域，使得电流从源极区域320向下流动经过沿着P体区360的侧部形成的导电沟道区域，经过硅柱305的N型漂移区域到达N+漏极区域370。漏极电极(未示出)可被形成在漏极区域370的底部上。
在纵向晶体管技术状态中，高电压(例如，100V-1200V)通常被施加在相应的漏极区域370和源极区域320的两端。(源极区域320和场板构件350通常接地。)随着电压增加，窄漂移区域305的相对侧上的场板区域350的存在引起N型漂移区域耗尽自由载流子。
图3B是沿切割线A-A’截取的图2中示出的纵向晶体管器件结构布局的另一个实施方案的示例截面侧视图。图3B的实施方案是与图3A中示出的实施方案大体上相同，除了图3B中每个圆柱形电介质区域330中向下延伸到下方漏极区域370中。
在又另一个实施方案中，漏极区域370可位于P型衬底的顶部上。
半导体领域的从业者应理解，相比于常规纵向晶体管结构，本文所描述的纵向晶体管器件结构改进了器件性能。原因是因为在器件击穿期间，击穿电压主要是由电介质(氧化物)层所支持的电压来确定的。本文所公开的纵向晶体管器件结构中的硅-氧化物-多晶硅场板的圆柱形状实现了沿着氧化物的更高的电场。这很大程度上是由于在全部横向方向上和沿着圆柱形电介质区域的电场的对称和均匀分布。因此，本文所描述的晶体管器件结构用较小尺度和较小体积的电介质(氧化物)材料实现了较高的击穿电压。
图4示出图3A的实施方案的截面侧视图，其中曲线图(在器件结构下面)例示了该器件的多个区域中的电场(E场)分布。在图4中，通过线435A示出电介质区域430中的横向电场强度。线435A示出电场(E场)变化/减少相对于沿着从场板朝向硅柱405A的边界的径向方向距离场板的径向距离[E～1/(2πx)]的相反趋势。此相反趋势是由于场线朝向圆柱形电介质区域430的横向边界向外扩大。该变化通过图4中的曲线435A示出，对比了由直线435B示出的常规/矩形氧化物区域结构中的横向E场。
线性线415示出了硅柱405A中的横向电场强度(在E场轴线425上)的变化。应注意，在柱405A和电介质区域430之间的界面处的E场的电场强度示出值的跳变418。参考数字402指示硅柱405A的窄区域的宽度，而参考数字403指示硅柱415和场板构件(多晶硅)450之间的距离。在一个实施方案中，圆柱形电介质区域430被隔开约1.5微米的横向距离402，具有约5.5微米的横向氧化物厚度403。
半导体领域的从业者还应理解，本文所公开的新型纵向器件结构用相同击穿电压支持更高的电场；或，换言之，相同的电场可用更薄的横向氧化物厚度450来实现。这意味着纵向晶体管器件结构可用更少的氧化物面积实现更好的器件性能。更少的氧化物面积转化成更多的硅面积，因此与现有技术的纵向晶体管器件布局相比减小了Rdson。此外，由于实现相同的高击穿电压所需要的氧化物更薄，因此与常规纵向功率晶体管器件相比，明显减少和简化了制造本文所描述的纵向器件结构所需要的工艺。
图5A-图5B例示了示出对于具有圆柱形结构且在半导体柱中具有分级掺杂的示例纵向晶体管器件的电势等值线与距离的关系的仿真结果，其中，漂移区域中的杂质的掺杂浓度随着从恰在体区下方朝向底部漏极区域(N+衬底)下降的纵向深度而逐渐变化(增加)。图5A和图5B的二维图各自展示了在充分耗尽具有多数载流子的截面的夹断电压下，在特定纵向深度和特定掺杂浓度下的特定横向截面中的电势等值线。在绘制的仿真结果中未示出电场线但可从示出的电势等值线计算出横向电场，并且可从夹断电压和每个截面的纵向位置计算出纵向电场。应注意，示出的仿真结果是针对如下一个布局，即其中圆柱形电介质区域被隔开约1.5微米的横向距离402，具有约5.5微米的横向氧化物厚度403(见图4)。在图5A的示例仿真结果中，示出硅柱/漂移区域405具有大约1×1015/cm3的掺杂浓度，70V的夹断电压。图5B示出对于大约2×1015/cm3的掺杂浓度、120V的夹断电压的示例仿真结果。在一个实施方案中，漂移区域中的掺杂浓度作为从靠近体区向下到靠近N+漏极区域的纵向深度的函数而变化。在特定的实施方案中，掺杂浓度从靠近漂移区域顶部大约1x1015/cm3变化到靠近漂移区域底部大约1x1017/cm3，其中夹断电压从70V变化到810V。
图5A和图5B的二维图中各自例示了对于如下纵向器件的电势等值线，该纵向器件在硅柱/漂移区域405的特定纵向深度处的特定横向截面中具有分级掺杂，并且在充分耗尽具有多数载流子的截面的夹断电压下具有特定掺杂浓度。在图5A中，场板构件450以三个一组的布置位于电介质区域430的中央。圆形图案线580示出每个圆柱形场板构件450周围的电势等值线和每个圆柱形电介质区域430内部的电势等值线。在硅区域附近看到电介质区域430中的较高密度的电势等值线580。电势等值线575在将每个电介质区域430隔开的硅柱/漂移区域405的内部。
图5B示出在纵向深度具有分级掺杂的纵向器件的不同横向截面处的类似的仿真结果，其中，掺杂浓度是2×1015/cm3，夹断电压水平是120V。三个圆柱形场板构件450是对称三角形布置。圆形电势等值线580示出每个圆柱形场板构件450周围的电介质区域430中的电势等值线。与图5A的仿真结果比较，图5B中的电势等值线580示出电介质区域430内的更高的密度。电势等值线575在硅柱/漂移区域405的内部并由于三个相邻圆柱形场板和电介质区域的电场的对称效应而形成。电势等值线575示出了三个相邻圆柱形场板构件450和电介质区域430的关于图5A中的中央轴线505的对称图案和关于图5B中的中央轴线555的对称图案。
例示的示例实施方案的上述描述，包括摘要中所描述的内容，不旨在穷举或限制到所公开的精确形式或结构。虽然本文描述的主题的特定实施方案和实施例是出于例示目的，但是在不脱离本发明的精神和范围的前提下，多种等同的改型是可能的。实际上，应理解，出于解释的目的提供特定示例厚度、材料类型、浓度、电压等并且在根据本发明的教导的其它实施方案和实施例中还可采用其它的值。

Claims (27)

1.一种纵向功率晶体管器件，包括：
第一导电类型的半导体层；
多个圆柱形电介质区域，位于所述半导体层中，所述圆柱形电介质区域在纵向方向上从所述半导体层的顶部表面向下延伸，相邻的圆柱形电介质区域沿着一个公共直径轴线被所述半导体层的具有第一宽度的窄区域横向隔开；
每个圆柱形电介质区域具有位于其中央的圆柱形导电场板构件，所述圆柱形导电场板构件在所述纵向方向上从所述顶部表面向下延伸至所述圆柱形电介质区域的底部附近，所述圆柱形电介质区域将所述圆柱形导电场板构件与所述窄区域横向隔开；
所述第一导电类型的源极区域，位于所述窄区域的顶部表面处；以及
所述第一导电类型的漏极区域，位于所述半导体层下方。
2.根据权利要求1所述的纵向功率晶体管器件，其中，所述圆柱形电介质区域的横向宽度将所述圆柱形导电场板构件与所述窄漂移区域隔开，所述横向宽度在沿着所述第一导电场板构件的厚度的所有点处是大体相同的。
3.根据权利要求1所述的纵向功率晶体管器件，还包括第二导电类型的体区，所述体区将所述源极与所述窄区域的下部隔开，所述下部包括一个漂移区域。
4.根据权利要求3所述的纵向功率晶体管器件，其中，每个圆柱形电介质区域还包括位于其中在所述窄区域和所述圆柱形导电场板构件之间的栅极构件。
5.根据权利要求4所述的纵向功率晶体管器件，其中，所述栅极构件是平面栅极构件。
6.根据权利要求1所述的纵向功率晶体管器件，其中，每个圆柱形导电场板构件均包括多晶硅。
7.根据权利要求1所述的纵向功率晶体管器件，其中，所述纵向功率晶体管器件的一个单元包括三角形布置的三个一组的圆柱形电介质区域。
8.根据权利要求1所述的纵向功率晶体管器件，还包括一个衬底，所述半导体层包括位于所述衬底上的外延层。
9.根据权利要求1所述的纵向功率晶体管器件，其中，所述衬底是所述第一导电类型。
10.根据权利要求1所述的纵向功率晶体管器件，其中，所述衬底是第二导电类型。
11.根据权利要求1所述的纵向功率晶体管器件，其中，所述第一导电类型包括n型。
12.根据权利要求1所述的纵向功率晶体管器件，其中，所述圆柱形电介质区域中的每一个向下延伸到所述漏极区域中。
13.根据权利要求3所述的纵向功率晶体管器件，其中，所述漂移区域具有从所述体区附近向下到所述漂移区域的底部附近变化的掺杂浓度。
14.根据权利要求3所述的纵向功率晶体管器件，其中，所述漂移区域包括具有分级掺杂分布的外延层。
15.根据权利要求13所述的纵向功率晶体管器件，其中，所述掺杂浓度在所述漂移区域的底部附近是最高的。
16.一种高电压晶体管，包括：
一个衬底；
一个阵列的圆柱形电介质区域，位于所述衬底中并被布置成三角形布局，每个圆柱形电介质区域在纵向方向上从所述半导体层的顶部表面向下延伸，相邻的圆柱形电介质区域沿着一个公共直径轴线被所述衬底的具有第一宽度的窄区域横向隔开；
每个圆柱形电介质区域具有位于其中央的圆柱形导电场板构件，所述圆柱形导电场板构件在所述纵向方向上从所述顶部表面向下延伸至所述圆柱形电介质区域的底部附近，所述圆柱形电介质区域将所述圆柱形导电场板构件与所述窄区域横向隔开；
一个源极，位于所述窄区域的顶部表面处；以及
一个漏极，位于所述衬底的底部处。
17.根据权利要求16所述的高电压晶体管器件，还包括将所述源极与所述窄区域的下部隔开的体区，所述下部包括漂移区域。
18.根据权利要求16所述的高电压晶体管，其中，每个圆柱形电介质区域还包括位于其中在所述窄区域和所述圆柱形导电场板构件之间的栅极构件。
19.根据权利要求18所述的高电压晶体管器件，其中，所述栅极构件是平面栅极构件。
20.根据权利要求16所述的高电压晶体管，其中，每个圆柱形电介质区域均包括氧化物。
21.根据权利要求16所述的高电压晶体管，其中，所述第一宽度在约1微米-2微米宽的范围内。
22.根据权利要求16所述的高电压晶体管，其中，所述窄区域的掺杂浓度在大约1x1015/cm3到大约1x1017/cm3的范围内。
23.根据权利要求16所述的高电压晶体管，其中，每个圆柱形电介质区域向下延伸到所述漏极中。
24.一种方法，包括：
在第一导电类型的半导体衬底中形成被所述半导体衬底的窄区域横向隔开的多个第一圆柱形沟槽和多个第二圆柱形沟槽，每个所述圆柱形沟槽在纵向方向上从所述半导体衬底的顶部表面向下延伸；
用电介质材料填充每个所述圆柱形沟槽的至少一部分；
在所述第一圆柱形沟槽的所述电介质材料中形成导电材料的第一圆柱形场板，在所述第二圆柱形沟槽的所述电介质材料中形成导电材料的第二圆柱形场板，所述第一场板位于所述第一圆柱形沟槽中央，所述第二场板位于所述第二圆柱形沟槽中央，所述第一场板从所述半导体衬底的顶部表面附近纵向向下延伸到所述第一圆柱形沟槽的底部附近，所述第二场板从所述半导体衬底的顶部表面附近纵向向下延伸到所述第二圆柱形沟槽的底部附近；
在所述窄区域的上部中形成源极区域和体区，所述源极区域是所述第一导电类型并且所述体区是所述第一导电类型相对的第二导电类型，所述体区将所述源极与所述窄区域的下部隔开，所述窄区域的所述下部包括漂移区域；以及
形成嵌入在所述电介质材料中、邻近所述体区的栅极，所述栅极与所述体区、所述第一场板和所述第二场板绝缘。
25.根据权利要求24所述的方法，还包括：
在所述窄区域的所述底部形成所述第一导电类型的漏极区域，所述漏极区域被连接至所述漂移区域；
形成连接至所述源极区域的源极电极；以及
形成连接至所述衬底的漏极电极。
26.根据权利要求24所述的方法，其中，所述电介质材料包括氧化物。
27.根据权利要求24所述的方法，其中，所述第一导电类型是n型。
CN201410776936.3A 2013-12-13 2014-12-15 具有圆柱形区域的纵向晶体管器件结构 Expired - Fee Related CN104716183B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201361915772P 2013-12-13 2013-12-13
US61/915,772 2013-12-13
US14/520,527 US9543396B2 (en) 2013-12-13 2014-10-22 Vertical transistor device structure with cylindrically-shaped regions
US14/520,527 2014-10-22

Publications (2)

Publication Number Publication Date
CN104716183A true CN104716183A (zh) 2015-06-17
CN104716183B CN104716183B (zh) 2020-05-01

Family

ID=52016527

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410776936.3A Expired - Fee Related CN104716183B (zh) 2013-12-13 2014-12-15 具有圆柱形区域的纵向晶体管器件结构

Country Status (4)

Country Link
US (1) US9543396B2 (zh)
EP (1) EP2884540B1 (zh)
JP (1) JP6624778B2 (zh)
CN (1) CN104716183B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109524466A (zh) * 2017-09-19 2019-03-26 株式会社东芝 半导体装置
CN110459599A (zh) * 2019-08-31 2019-11-15 电子科技大学 具有深埋层的纵向浮空场板器件及制造方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6448513B2 (ja) * 2015-11-16 2019-01-09 株式会社東芝 半導体装置
US10707343B2 (en) 2016-03-31 2020-07-07 Shindengen Electric Manufacturing Co., Ltd. Method of manufacturing semiconductor device and semiconductor device
JP7246287B2 (ja) 2019-09-13 2023-03-27 株式会社東芝 半導体装置およびその製造方法
US11322612B2 (en) 2019-09-17 2022-05-03 Kabushiki Kaisha Toshiba Semiconductor device with region of varying thickness
JP7295052B2 (ja) 2020-02-28 2023-06-20 株式会社東芝 半導体装置
JP7465123B2 (ja) 2020-03-12 2024-04-10 株式会社東芝 半導体装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050167749A1 (en) * 2001-09-07 2005-08-04 Power Integrations, Inc. High-voltage vertical transistor with edge termination structure
US20060145230A1 (en) * 2000-06-30 2006-07-06 Ichiro Omura Power semiconductor switching element
CN101246906A (zh) * 2007-02-16 2008-08-20 电力集成公司 在高压晶体管结构的端处的栅极回拉

Family Cites Families (226)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5712557Y2 (zh) 1974-12-20 1982-03-12
JPS5638867Y2 (zh) 1975-07-11 1981-09-10
JPS5712558Y2 (zh) 1977-06-15 1982-03-12
US4343015A (en) 1980-05-14 1982-08-03 General Electric Company Vertical channel field effect transistor
JPS5710975U (zh) 1980-06-23 1982-01-20
GB2089119A (en) 1980-12-10 1982-06-16 Philips Electronic Associated High voltage semiconductor devices
US4626879A (en) 1982-12-21 1986-12-02 North American Philips Corporation Lateral double-diffused MOS transistor devices suitable for source-follower applications
US4738936A (en) 1983-07-01 1988-04-19 Acrian, Inc. Method of fabrication lateral FET structure having a substrate to source contact
US4626789A (en) 1983-08-19 1986-12-02 Hitachi, Ltd. Demodulating circuit for data signal
JPS6064471U (ja) 1983-10-05 1985-05-07 株式会社東芝 記録円盤再生装置
US4531173A (en) 1983-11-02 1985-07-23 Motorola, Inc. Protective power foldback circuit for a power semiconductor
US4553084A (en) 1984-04-02 1985-11-12 Motorola, Inc. Current sensing circuit
US4618541A (en) 1984-12-21 1986-10-21 Advanced Micro Devices, Inc. Method of forming a silicon nitride film transparent to ultraviolet radiation and resulting article
JPS61168253A (ja) 1985-01-19 1986-07-29 Sharp Corp 高耐圧ｍｏｓ電界効果半導体装置
US4665426A (en) 1985-02-01 1987-05-12 Advanced Micro Devices, Inc. EPROM with ultraviolet radiation transparent silicon nitride passivation layer
US4963951A (en) 1985-11-29 1990-10-16 General Electric Company Lateral insulated gate bipolar transistors with improved latch-up immunity
US4764800A (en) 1986-05-07 1988-08-16 Advanced Micro Devices, Inc. Seal structure for an integrated circuit
US4769685A (en) 1986-10-27 1988-09-06 General Motors Corporation Recessed-gate junction-MOS field effect transistor
US4796070A (en) 1987-01-15 1989-01-03 General Electric Company Lateral charge control semiconductor device and method of fabrication
US5010024A (en) 1987-03-04 1991-04-23 Advanced Micro Devices, Inc. Passivation for integrated circuit structures
US4811075A (en) 1987-04-24 1989-03-07 Power Integrations, Inc. High voltage MOS transistors
US4890144A (en) 1987-09-14 1989-12-26 Motorola, Inc. Integrated circuit trench cell
JPH01112764A (ja) 1987-10-27 1989-05-01 Nec Corp 半導体装置
US4926074A (en) 1987-10-30 1990-05-15 North American Philips Corporation Semiconductor switch with parallel lateral double diffused MOS transistor and lateral insulated gate transistor
US4939566A (en) 1987-10-30 1990-07-03 North American Philips Corporation Semiconductor switch with parallel DMOS and IGT
US4890146A (en) 1987-12-16 1989-12-26 Siliconix Incorporated High voltage level shift semiconductor device
US4922327A (en) 1987-12-24 1990-05-01 University Of Toronto Innovations Foundation Semiconductor LDMOS device with upper and lower passages
US4929987A (en) 1988-02-01 1990-05-29 General Instrument Corporation Method for setting the threshold voltage of a power mosfet
US5025296A (en) 1988-02-29 1991-06-18 Motorola, Inc. Center tapped FET
JPH0777262B2 (ja) 1988-04-19 1995-08-16 日本電気株式会社 縦型電界効果トランジスタ
JPH0745817Y2 (ja) 1988-04-20 1995-10-18 富士通株式会社 入金口紙幣揃え機構
US5283201A (en) 1988-05-17 1994-02-01 Advanced Power Technology, Inc. High density power device fabrication process
US5237193A (en) 1988-06-24 1993-08-17 Siliconix Incorporated Lightly doped drain MOSFET with reduced on-resistance
US4951102A (en) 1988-08-24 1990-08-21 Harris Corporation Trench gate VCMOS
DE68926384T2 (de) 1988-11-29 1996-10-10 Toshiba Kawasaki Kk Lateraler Leitfähigkeitsmodulations-MOSFET
US5072266A (en) 1988-12-27 1991-12-10 Siliconix Incorporated Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry
US5008794A (en) 1989-12-21 1991-04-16 Power Integrations, Inc. Regulated flyback converter with spike suppressing coupled inductors
JP2597412B2 (ja) 1990-03-20 1997-04-09 三菱電機株式会社 半導体装置およびその製造方法
US5040045A (en) 1990-05-17 1991-08-13 U.S. Philips Corporation High voltage MOS transistor having shielded crossover path for a high voltage connection bus
US5072268A (en) 1991-03-12 1991-12-10 Power Integrations, Inc. MOS gated bipolar transistor
US5122848A (en) 1991-04-08 1992-06-16 Micron Technology, Inc. Insulated-gate vertical field-effect transistor with high current drive and minimum overlap capacitance
US5386136A (en) 1991-05-06 1995-01-31 Siliconix Incorporated Lightly-doped drain MOSFET with improved breakdown characteristics
US5146298A (en) 1991-08-16 1992-09-08 Eklund Klas H Device which functions as a lateral double-diffused insulated gate field effect transistor or as a bipolar transistor
US5164891A (en) 1991-08-21 1992-11-17 Power Integrations, Inc. Low noise voltage regulator and method using a gated single ended oscillator
JPH05160408A (ja) 1991-12-04 1993-06-25 Toshiba Corp 電界効果トランジスタおよびこれを用いたダイナミック型半導体記憶装置
US5258636A (en) 1991-12-12 1993-11-02 Power Integrations, Inc. Narrow radius tips for high voltage semiconductor devices with interdigitated source and drain electrodes
US5270264A (en) 1991-12-20 1993-12-14 Intel Corporation Process for filling submicron spaces with dielectric
US5285367A (en) 1992-02-07 1994-02-08 Power Integrations, Inc. Linear load circuit to control switching power supplies under minimum load conditions
JP3435173B2 (ja) 1992-07-10 2003-08-11 株式会社日立製作所 半導体装置
US5294824A (en) 1992-07-31 1994-03-15 Motorola, Inc. High voltage transistor having reduced on-resistance
US5323044A (en) 1992-10-02 1994-06-21 Power Integrations, Inc. Bi-directional MOSFET switch
US5408141A (en) 1993-01-04 1995-04-18 Texas Instruments Incorporated Sensed current driving device
US5326711A (en) 1993-01-04 1994-07-05 Texas Instruments Incorporated High performance high voltage vertical transistor and method of fabrication
US5274259A (en) 1993-02-01 1993-12-28 Power Integrations, Inc. High voltage transistor
US5313082A (en) 1993-02-16 1994-05-17 Power Integrations, Inc. High voltage MOS transistor with a low on-resistance
DE4309764C2 (de) 1993-03-25 1997-01-30 Siemens Ag Leistungs-MOSFET
US5349225A (en) 1993-04-12 1994-09-20 Texas Instruments Incorporated Field effect transistor with a lightly doped drain
US5412239A (en) 1993-05-14 1995-05-02 Siliconix Incorporated Contact geometry for improved lateral MOSFET
US5324683A (en) 1993-06-02 1994-06-28 Motorola, Inc. Method of forming a semiconductor structure having an air region
BE1007283A3 (nl) 1993-07-12 1995-05-09 Philips Electronics Nv Halfgeleiderinrichting met een most voorzien van een extended draingebied voor hoge spanningen.
DE69322963T2 (de) 1993-09-17 1999-06-24 Cons Ric Microelettronica Eine integrierte Vorrichtung mit einem bipolaren Transistor und einem MOSFET Transistor in Emittorschaltungsanordnung
US5396097A (en) 1993-11-22 1995-03-07 Motorola Inc Transistor with common base region
US5523604A (en) 1994-05-13 1996-06-04 International Rectifier Corporation Amorphous silicon layer for top surface of semiconductor device
US5494853A (en) 1994-07-25 1996-02-27 United Microelectronics Corporation Method to solve holes in passivation by metal layout
JP3338185B2 (ja) 1994-08-02 2002-10-28 株式会社東芝 半導体装置
US5521105A (en) 1994-08-12 1996-05-28 United Microelectronics Corporation Method of forming counter-doped island in power MOSFET
US5550405A (en) 1994-12-21 1996-08-27 Advanced Micro Devices, Incorporated Processing techniques for achieving production-worthy, low dielectric, low interconnect resistance and high performance ICS
US5656543A (en) 1995-02-03 1997-08-12 National Semiconductor Corporation Fabrication of integrated circuits with borderless vias
EP0726603B1 (en) 1995-02-10 1999-04-21 SILICONIX Incorporated Trenched field effect transistor with PN depletion barrier
US5670828A (en) 1995-02-21 1997-09-23 Advanced Micro Devices, Inc. Tunneling technology for reducing intra-conductive layer capacitance
JP3291958B2 (ja) 1995-02-21 2002-06-17 富士電機株式会社 バックソースｍｏｓｆｅｔ
US5798554A (en) 1995-02-24 1998-08-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno MOS-technology power device integrated structure and manufacturing process thereof
US6204533B1 (en) 1995-06-02 2001-03-20 Siliconix Incorporated Vertical trench-gated power MOSFET having stripe geometry and high cell density
US6049108A (en) 1995-06-02 2000-04-11 Siliconix Incorporated Trench-gated MOSFET with bidirectional voltage clamping
US5659201A (en) 1995-06-05 1997-08-19 Advanced Micro Devices, Inc. High conductivity interconnection line
JP3957774B2 (ja) 1995-06-23 2007-08-15 株式会社東芝 半導体装置
KR100188096B1 (ko) 1995-09-14 1999-06-01 김광호 반도체 장치 및 그 제조 방법
US5637898A (en) 1995-12-22 1997-06-10 North Carolina State University Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance
US6097063A (en) 1996-01-22 2000-08-01 Fuji Electric Co., Ltd. Semiconductor device having a plurality of parallel drift regions
JP3369388B2 (ja) 1996-01-30 2003-01-20 株式会社東芝 半導体装置
EP1408554B1 (de) 1996-02-05 2015-03-25 Infineon Technologies AG Durch Feldeffekt steuerbares Halbleiterbauelement
DE19611045C1 (de) 1996-03-20 1997-05-22 Siemens Ag Durch Feldeffekt steuerbares Halbleiterbauelement
JP3400237B2 (ja) 1996-04-30 2003-04-28 株式会社東芝 半導体装置
US5612567A (en) 1996-05-13 1997-03-18 North Carolina State University Schottky barrier rectifiers and methods of forming same
WO1998004004A1 (en) 1996-07-19 1998-01-29 Siliconix Incorporated High density trench dmos transistor with trench bottom implant
US5841166A (en) 1996-09-10 1998-11-24 Spectrian, Inc. Lateral DMOS transistor for RF/microwave applications
JP3504085B2 (ja) 1996-09-30 2004-03-08 株式会社東芝 半導体装置
US6168983B1 (en) 1996-11-05 2001-01-02 Power Integrations, Inc. Method of making a high-voltage transistor with multiple lateral conduction layers
US6639277B2 (en) 1996-11-05 2003-10-28 Power Integrations, Inc. High-voltage transistor with multi-layer conduction region
US6207994B1 (en) 1996-11-05 2001-03-27 Power Integrations, Inc. High-voltage transistor with multi-layer conduction region
KR100228331B1 (ko) 1996-12-30 1999-11-01 김영환 반도체 소자의 삼중웰 제조 방법
EP0856887B1 (en) 1997-01-31 2004-04-28 SGS-THOMSON MICROELECTRONICS S.r.l. Process for forming a morphological edge structure to seal integrated electronic devices, and corresponding device
JP3393544B2 (ja) 1997-02-26 2003-04-07 シャープ株式会社 半導体装置の製造方法
JP3367857B2 (ja) 1997-03-14 2003-01-20 株式会社東芝 半導体装置
US6133607A (en) 1997-05-22 2000-10-17 Kabushiki Kaisha Toshiba Semiconductor device
US5869875A (en) 1997-06-10 1999-02-09 Spectrian Lateral diffused MOS transistor with trench source contact
US6054752A (en) 1997-06-30 2000-04-25 Denso Corporation Semiconductor device
US6194283B1 (en) 1997-10-29 2001-02-27 Advanced Micro Devices, Inc. High density trench fill due to new spacer fill method including isotropically etching silicon nitride spacers
US6316807B1 (en) 1997-12-05 2001-11-13 Naoto Fujishima Low on-resistance trench lateral MISFET with better switching characteristics and method for manufacturing same
JP2001513270A (ja) 1997-12-24 2001-08-28 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 改良されたオン状態特性を有する高電圧薄膜トランジスタ及びその製造方法
JP3410949B2 (ja) 1998-02-12 2003-05-26 株式会社東芝 半導体装置
US6362064B2 (en) 1998-04-21 2002-03-26 National Semiconductor Corporation Elimination of walkout in high voltage trench isolated devices
JP3211771B2 (ja) 1998-05-26 2001-09-25 日本電気株式会社 音声送受信装置
JP3016762B2 (ja) 1998-06-25 2000-03-06 松下電子工業株式会社 半導体装置およびその製造方法
US6037631A (en) 1998-09-18 2000-03-14 Siemens Aktiengesellschaft Semiconductor component with a high-voltage endurance edge structure
US5998833A (en) 1998-10-26 1999-12-07 North Carolina State University Power semiconductor devices having improved high frequency switching and breakdown characteristics
US6621121B2 (en) 1998-10-26 2003-09-16 Silicon Semiconductor Corporation Vertical MOSFETs having trench-based gate electrodes within deeper trench-based source electrodes
DE19854915C2 (de) 1998-11-27 2002-09-05 Infineon Technologies Ag MOS-Feldeffekttransistor mit Hilfselektrode
US6674107B1 (en) 1998-12-07 2004-01-06 Lovoltech, Inc. Enhancement mode junction field effect transistor with low on resistance
US6304007B1 (en) 1998-12-09 2001-10-16 Lovoltech, Inc. Switcher for switching capacitors
US6307223B1 (en) 1998-12-11 2001-10-23 Lovoltech, Inc. Complementary junction field effect transistors
US6281705B1 (en) 1998-12-11 2001-08-28 Lovoltech, Inc. Power supply module in integrated circuits
US6251716B1 (en) 1999-01-06 2001-06-26 Lovoltech, Inc. JFET structure and manufacture method for low on-resistance and low voltage application
US6084277A (en) 1999-02-18 2000-07-04 Power Integrations, Inc. Lateral power MOSFET with improved gate design
JP2000252465A (ja) 1999-03-03 2000-09-14 Sony Corp 半導体装置およびその製造方法
US6191447B1 (en) 1999-05-28 2001-02-20 Micro-Ohm Corporation Power semiconductor devices that utilize tapered trench-based insulating regions to improve electric field profiles in highly doped drift region mesas and methods of forming same
GB9917099D0 (en) 1999-07-22 1999-09-22 Koninkl Philips Electronics Nv Cellular trench-gate field-effect transistors
JP3971062B2 (ja) 1999-07-29 2007-09-05 株式会社東芝 高耐圧半導体装置
US6365932B1 (en) 1999-08-20 2002-04-02 Denso Corporation Power MOS transistor
US6127703A (en) 1999-08-31 2000-10-03 Philips Electronics North America Corporation Lateral thin-film silicon-on-insulator (SOI) PMOS device having a drain extension region
US6566936B1 (en) 1999-10-29 2003-05-20 Lovoltech Inc. Two terminal rectifier normally OFF JFET
US6614289B1 (en) 2000-11-07 2003-09-02 Lovoltech Inc. Starter device for normally off FETs
US6580252B1 (en) 1999-10-29 2003-06-17 Lovoltech, Inc. Boost circuit with normally off JFET
US6355513B1 (en) 1999-10-29 2002-03-12 Lovoltech, Inc. Asymmetric depletion region for normally off JFET
US6349047B1 (en) 2000-12-18 2002-02-19 Lovoltech, Inc. Full wave rectifier circuit using normally off JFETs
US6734715B1 (en) 1999-11-29 2004-05-11 Lovoltech, Inc. Two terminal rectifier using normally off JFET
JP4491875B2 (ja) 1999-12-13 2010-06-30 富士電機システムズ株式会社 トレンチ型ｍｏｓ半導体装置
US6489653B2 (en) 1999-12-27 2002-12-03 Kabushiki Kaisha Toshiba Lateral high-breakdown-voltage transistor
GB0003185D0 (en) 2000-02-12 2000-04-05 Koninkl Philips Electronics Nv An insulated gate field effect device
US7098634B1 (en) 2003-02-21 2006-08-29 Lovoltech, Inc. Buck-boost circuit with normally off JFET
US6781194B2 (en) 2001-04-11 2004-08-24 Silicon Semiconductor Corporation Vertical power devices having retrograded-doped transition regions and insulated trench-based electrodes therein
JP3448015B2 (ja) 2000-07-26 2003-09-16 松下電器産業株式会社 半導体装置及びその製造方法
JP2002170955A (ja) 2000-09-25 2002-06-14 Toshiba Corp 半導体装置およびその製造方法
US6750698B1 (en) 2000-09-29 2004-06-15 Lovoltech, Inc. Cascade circuits utilizing normally-off junction field effect transistors for low on-resistance and low voltage applications
CA2360031C (en) 2000-10-30 2006-06-20 Thomas & Betts International, Inc. Capacitive test point voltage and phasing detector
US6525372B2 (en) 2000-11-16 2003-02-25 Silicon Wireless Corporation Vertical power devices having insulated source electrodes in discontinuous deep trenches
US6468847B1 (en) 2000-11-27 2002-10-22 Power Integrations, Inc. Method of fabricating a high-voltage transistor
US6768171B2 (en) 2000-11-27 2004-07-27 Power Integrations, Inc. High-voltage transistor with JFET conduction channels
US6509220B2 (en) 2000-11-27 2003-01-21 Power Integrations, Inc. Method of fabricating a high-voltage transistor
US6424007B1 (en) 2001-01-24 2002-07-23 Power Integrations, Inc. High-voltage transistor with buried conduction layer
US7345342B2 (en) 2001-01-30 2008-03-18 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US6356059B1 (en) 2001-02-16 2002-03-12 Lovoltech, Inc. Buck converter with normally off JFET
US6683346B2 (en) 2001-03-09 2004-01-27 Fairchild Semiconductor Corporation Ultra dense trench-gated power-device with the reduced drain-source feedback capacitance and Miller charge
JP2002305304A (ja) 2001-04-05 2002-10-18 Toshiba Corp 電力用半導体装置
US6998678B2 (en) * 2001-05-17 2006-02-14 Infineon Technologies Ag Semiconductor arrangement with a MOS-transistor and a parallel Schottky-diode
US6853033B2 (en) 2001-06-05 2005-02-08 National University Of Singapore Power MOSFET having enhanced breakdown voltage
US6528880B1 (en) 2001-06-25 2003-03-04 Lovoltech Inc. Semiconductor package for power JFET having copper plate for source and ribbon contact for gate
JP4421144B2 (ja) 2001-06-29 2010-02-24 株式会社東芝 半導体装置
GB0120595D0 (en) 2001-08-24 2001-10-17 Koninkl Philips Electronics Nv A semiconductor rectifier
US6573558B2 (en) 2001-09-07 2003-06-03 Power Integrations, Inc. High-voltage vertical transistor with a multi-layered extended drain structure
US6555873B2 (en) 2001-09-07 2003-04-29 Power Integrations, Inc. High-voltage lateral transistor with a multi-layered extended drain structure
US6683344B2 (en) 2001-09-07 2004-01-27 Ixys Corporation Rugged and fast power MOSFET and IGBT
US6635544B2 (en) 2001-09-07 2003-10-21 Power Intergrations, Inc. Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
US7221011B2 (en) 2001-09-07 2007-05-22 Power Integrations, Inc. High-voltage vertical transistor with a multi-gradient drain doping profile
GB0122120D0 (en) 2001-09-13 2001-10-31 Koninkl Philips Electronics Nv Edge termination in MOS transistors
US6555883B1 (en) 2001-10-29 2003-04-29 Power Integrations, Inc. Lateral power MOSFET for high switching speeds
US6552597B1 (en) 2001-11-02 2003-04-22 Power Integrations, Inc. Integrated circuit with closely coupled high voltage output and offline transistor pair
US6777747B2 (en) 2002-01-18 2004-08-17 Fairchild Semiconductor Corporation Thick buffer region design to improve IGBT self-clamped inductive switching (SCIS) energy density and device manufacturability
DE10214151B4 (de) 2002-03-28 2007-04-05 Infineon Technologies Ag Halbleiterbauelement mit erhöhter Durchbruchspannung im Randbereich
US6900506B1 (en) 2002-04-04 2005-05-31 Lovoltech, Inc. Method and structure for a high voltage junction field effect transistor
JP4107867B2 (ja) 2002-04-09 2008-06-25 株式会社ミツカングループ本社 包材入り柑橘調味料
US6583663B1 (en) 2002-04-22 2003-06-24 Power Integrations, Inc. Power integrated circuit with distributed gate driver
JP4107877B2 (ja) 2002-05-16 2008-06-25 セイコーインスツル株式会社 半導体不揮発性メモリ装置
US6921932B1 (en) 2002-05-20 2005-07-26 Lovoltech, Inc. JFET and MESFET structures for low voltage, high current and high frequency applications
US7262461B1 (en) 2002-05-20 2007-08-28 Qspeed Semiconductor Inc. JFET and MESFET structures for low voltage, high current and high frequency applications
US7268378B1 (en) 2002-05-29 2007-09-11 Qspeed Semiconductor Inc. Structure for reduced gate capacitance in a JFET
JP2004022700A (ja) 2002-06-14 2004-01-22 Sanyo Electric Co Ltd 半導体装置
US6777722B1 (en) 2002-07-02 2004-08-17 Lovoltech, Inc. Method and structure for double dose gate in a JFET
US6661276B1 (en) 2002-07-29 2003-12-09 Lovoltech Inc. MOSFET driver matching circuit for an enhancement mode JFET
US6747342B1 (en) 2002-08-09 2004-06-08 Lovoltech, Inc. Flip-chip packaging
JP4158453B2 (ja) 2002-08-22 2008-10-01 株式会社デンソー 半導体装置及びその製造方法
JP2004087520A (ja) 2002-08-22 2004-03-18 Toyota Industries Corp 半導体装置
US6696706B1 (en) 2002-10-22 2004-02-24 Lovoltech, Inc. Structure and method for a junction field effect transistor with reduced gate capacitance
US6774417B1 (en) 2002-10-23 2004-08-10 Lovoltech, Inc. Electrostatic discharge protection device for integrated circuits
JP4130356B2 (ja) 2002-12-20 2008-08-06 株式会社東芝 半導体装置
US7075132B1 (en) 2002-12-30 2006-07-11 Lovoltech, Inc. Programmable junction field effect transistor and method for programming the same
DE10306281B4 (de) 2003-02-14 2007-02-15 Infineon Technologies Ag Anordnung und Verfahren zur Herstellung von vertikalen Transistorzellen und transistorgesteuerten Speicherzellen
US7452763B1 (en) 2003-03-04 2008-11-18 Qspeed Semiconductor Inc. Method for a junction field effect transistor with reduced gate capacitance
US7009228B1 (en) 2003-03-04 2006-03-07 Lovoltech, Incorporated Guard ring structure and method for fabricating same
US7038260B1 (en) 2003-03-04 2006-05-02 Lovoltech, Incorporated Dual gate structure for a FET and method for fabricating same
US6887768B1 (en) 2003-05-15 2005-05-03 Lovoltech, Inc. Method and structure for composite trench fill
US6865093B2 (en) 2003-05-27 2005-03-08 Power Integrations, Inc. Electronic circuit control element with tap element
DE10326523A1 (de) 2003-06-12 2005-01-13 Infineon Technologies Ag Feldeffekttransistor, insbesondere doppelt diffundierter Feldeffekttransistor, sowie Herstellungsverfahren
US7790231B2 (en) 2003-07-10 2010-09-07 Brewer Science Inc. Automated process and apparatus for planarization of topographical surfaces
US7227242B1 (en) 2003-10-09 2007-06-05 Qspeed Semiconductor Inc. Structure and method for enhanced performance in semiconductor substrates
EP1536480A1 (en) 2003-11-28 2005-06-01 STMicroelectronics S.r.l. Semiconductor power device with insulated gate, trenchgate structure and corresponding manufacturing method
US7157959B2 (en) 2004-03-31 2007-01-02 Semiconductor Components Industries, L.L.C. Method of forming a self-gated transistor and structure therefor
US7211845B1 (en) 2004-04-19 2007-05-01 Qspeed Semiconductor, Inc. Multiple doped channel in a multiple doped gate junction field effect transistor
US7183610B2 (en) 2004-04-30 2007-02-27 Siliconix Incorporated Super trench MOSFET including buried source electrode and method of fabricating the same
JP2005340626A (ja) 2004-05-28 2005-12-08 Toshiba Corp 半導体装置
US7417266B1 (en) 2004-06-10 2008-08-26 Qspeed Semiconductor Inc. MOSFET having a JFET embedded as a body diode
US7608888B1 (en) 2004-06-10 2009-10-27 Qspeed Semiconductor Inc. Field effect transistor
US7238976B1 (en) 2004-06-15 2007-07-03 Qspeed Semiconductor Inc. Schottky barrier rectifier and method of manufacturing the same
JP4404709B2 (ja) 2004-07-12 2010-01-27 トヨタ自動車株式会社 絶縁ゲート型半導体装置およびその製造方法
US20060086974A1 (en) 2004-10-26 2006-04-27 Power Integrations, Inc. Integrated circuit with multi-length power transistor segments
US7135748B2 (en) 2004-10-26 2006-11-14 Power Integrations, Inc. Integrated circuit with multi-length output transistor segment
US7436039B2 (en) 2005-01-06 2008-10-14 Velox Semiconductor Corporation Gallium nitride semiconductor device
US7989881B2 (en) * 2005-02-08 2011-08-02 Nxp B.V. Semiconductor device structure with a tapered field plate and cylindrical drift region geometry
US7348826B1 (en) 2005-03-18 2008-03-25 Qspeed Semiconductor Inc. Composite field effect transistor
JP4830360B2 (ja) 2005-06-17 2011-12-07 株式会社デンソー 半導体装置およびその製造方法
KR20070015309A (ko) 2005-07-30 2007-02-02 페어차일드코리아반도체 주식회사 고전압 반도체소자
JP4817827B2 (ja) 2005-12-09 2011-11-16 株式会社東芝 半導体装置
US7696598B2 (en) 2005-12-27 2010-04-13 Qspeed Semiconductor Inc. Ultrafast recovery diode
JP5351519B2 (ja) 2005-12-27 2013-11-27 パワー・インテグレーションズ・インコーポレーテッド 高速回復整流器構造体の装置および方法
US7554152B1 (en) 2006-01-11 2009-06-30 National Semiconductor Corporation Versatile system for integrated sense transistor
DE102006004405B4 (de) 2006-01-31 2015-05-13 Infineon Technologies Austria Ag Leistungshalbleiterbauelemente mit einer Driftstrecke und einer hochdielektrischen Kompensationszone und Verfahren zur Herstellung einer Kompensationszone
JP4453671B2 (ja) 2006-03-08 2010-04-21 トヨタ自動車株式会社 絶縁ゲート型半導体装置およびその製造方法
JP5052025B2 (ja) 2006-03-29 2012-10-17 株式会社東芝 電力用半導体素子
US7746156B1 (en) 2006-04-14 2010-06-29 Qspeed Semiconductor Inc. Circuit and method for driving a junction field effect transistor
US7381618B2 (en) 2006-10-03 2008-06-03 Power Integrations, Inc. Gate etch process for a high-voltage FET
CN101641763B (zh) * 2007-01-09 2012-07-04 威力半导体有限公司 半导体器件及其制造方法
US8653583B2 (en) 2007-02-16 2014-02-18 Power Integrations, Inc. Sensing FET integrated with a high-voltage transistor
US7468536B2 (en) 2007-02-16 2008-12-23 Power Integrations, Inc. Gate metal routing for transistor with checkerboarded layout
US7859037B2 (en) 2007-02-16 2010-12-28 Power Integrations, Inc. Checkerboarded high-voltage vertical transistor layout
US7557406B2 (en) 2007-02-16 2009-07-07 Power Integrations, Inc. Segmented pillar layout for a high-voltage vertical transistor
US7939853B2 (en) 2007-03-20 2011-05-10 Power Integrations, Inc. Termination and contact structures for a high voltage GaN-based heterojunction transistor
US7492212B1 (en) 2007-08-21 2009-02-17 Infineon Technologies Ag Adaptive capacitance for transistor
US7875962B2 (en) 2007-10-15 2011-01-25 Power Integrations, Inc. Package for a power semiconductor device
US7964912B2 (en) 2008-09-18 2011-06-21 Power Integrations, Inc. High-voltage vertical transistor with a varied width silicon pillar
US20100155831A1 (en) 2008-12-20 2010-06-24 Power Integrations, Inc. Deep trench insulated gate bipolar transistor
US7871882B2 (en) 2008-12-20 2011-01-18 Power Integrations, Inc. Method of fabricating a deep trench insulated gate bipolar transistor
SG10201600407SA (en) 2009-02-20 2016-02-26 Semiconductor Energy Lab Semiconductor device and manufacturing method of the same
US7893754B1 (en) 2009-10-02 2011-02-22 Power Integrations, Inc. Temperature independent reference circuit
US7932738B1 (en) 2010-05-07 2011-04-26 Power Integrations, Inc. Method and apparatus for reading a programmable anti-fuse element in a high-voltage integrated circuit
US9443972B2 (en) * 2011-11-30 2016-09-13 Infineon Technologies Austria Ag Semiconductor device with field electrode
CN104347708A (zh) * 2013-08-07 2015-02-11 中芯国际集成电路制造(北京)有限公司 多栅vdmos晶体管及其形成方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060145230A1 (en) * 2000-06-30 2006-07-06 Ichiro Omura Power semiconductor switching element
US20050167749A1 (en) * 2001-09-07 2005-08-04 Power Integrations, Inc. High-voltage vertical transistor with edge termination structure
CN101246906A (zh) * 2007-02-16 2008-08-20 电力集成公司 在高压晶体管结构的端处的栅极回拉

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109524466A (zh) * 2017-09-19 2019-03-26 株式会社东芝 半导体装置
CN109524466B (zh) * 2017-09-19 2022-04-19 株式会社东芝 半导体装置
CN110459599A (zh) * 2019-08-31 2019-11-15 电子科技大学 具有深埋层的纵向浮空场板器件及制造方法
CN110459599B (zh) * 2019-08-31 2021-03-16 电子科技大学 具有深埋层的纵向浮空场板器件及制造方法

Also Published As

Publication number Publication date
US20150171174A1 (en) 2015-06-18
EP2884540A1 (en) 2015-06-17
JP2015115611A (ja) 2015-06-22
CN104716183B (zh) 2020-05-01
EP2884540B1 (en) 2019-02-20
JP6624778B2 (ja) 2019-12-25
US9543396B2 (en) 2017-01-10

Similar Documents

Publication Publication Date Title
CN104716183A (zh) 具有圆柱形区域的纵向晶体管器件结构
US9490250B2 (en) Half-bridge circuit with a low-side transistor and a level shifter transistor integrated in a common semiconductor body
US6621132B2 (en) Semiconductor device
JP5878990B2 (ja) 活性ドリフトゾーンを有する半導体構成
US9748378B2 (en) Semiconductor device, integrated circuit and method of manufacturing a semiconductor device
KR20170118129A (ko) 고전압 반도체 디바이스 및 상기 디바이스의 제조방법
US9728614B2 (en) Semiconductor device comprising a field electrode
JP2008205482A (ja) 高電圧垂直トランジスタで集積された検知トランジスタ
KR101511429B1 (ko) 반도체 장치 및 반도체 장치를 제조하는 방법
US9698228B2 (en) Transistor device with field-electrode
CN104576737B (zh) 半导体器件
CN103311304A (zh) 半导体器件
KR20170030122A (ko) 전력용 반도체 소자
JP2019503591A (ja) パワー半導体デバイス
KR20140124950A (ko) 반도체 전력소자
KR20160029630A (ko) 반도체 장치
CN107644912A (zh) 包括晶体管阵列和终止区的半导体器件以及制造这样的半导体器件的方法
US9985126B2 (en) Semiconductor device comprising a first gate electrode and a second gate electrode
CN104600067A (zh) 集成电路和制造集成电路的方法
US9450085B2 (en) Semiconductor device and method for producing a semiconductor device
US10068975B2 (en) Semiconductor device having field plate structures, source regions and gate electrode structures between the field plate structures
CN114730712A (zh) 半导体装置
US9431484B2 (en) Vertical transistor with improved robustness
CN112289845A (zh) 具有jfet区布图设计的半导体器件
KR20160005928A (ko) 전력 반도체 소자

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20200501

Termination date: 20201215

CF01 Termination of patent right due to non-payment of annual fee