CN105172255A - Magnetic multilayer film with antiferromagnetc interlayer coupling, and production method thereof - Google Patents

Magnetic multilayer film with antiferromagnetc interlayer coupling, and production method thereof Download PDF

Info

Publication number
CN105172255A
CN105172255A CN201510428403.0A CN201510428403A CN105172255A CN 105172255 A CN105172255 A CN 105172255A CN 201510428403 A CN201510428403 A CN 201510428403A CN 105172255 A CN105172255 A CN 105172255A
Authority
CN
China
Prior art keywords
magnetoresistance effect
mno
layer
barrier layer
ferromagnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201510428403.0A
Other languages
Chinese (zh)
Other versions
CN105172255B (en
Inventor
吴文彬
陈斌斌
徐浩然
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Science and Technology of China USTC
Original Assignee
University of Science and Technology of China USTC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Science and Technology of China USTC filed Critical University of Science and Technology of China USTC
Priority to CN201510428403.0A priority Critical patent/CN105172255B/en
Publication of CN105172255A publication Critical patent/CN105172255A/en
Application granted granted Critical
Publication of CN105172255B publication Critical patent/CN105172255B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
    • B32B37/24—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer not being coherent before laminating, e.g. made up from granular material sprinkled onto a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
    • B32B37/24—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer not being coherent before laminating, e.g. made up from granular material sprinkled onto a substrate
    • B32B2037/246—Vapour deposition
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/0036—Heat treatment
    • B32B2038/0048—Annealing, relaxing

Abstract

The invention provides a magnetic multilayer film with antiferromagnetc interlayer coupling, and a production method thereof. The magnetic multilayer film with antiferromagnetc interlayer coupling, adopting CaRu0.5Ti0.5O3 as a barrier material and perovskite type transition metal oxide as a ferromagnetic material, can well epitaxially grow and realizes anti-parallel coupling among ferromagnetic layers under zero field. Compared with present spin valve type structures, the magnetic multilayer provided by the invention can realize parallel or anti-parallel arrangement between two ferromagnetic layers without pinning of the bottom anti-ferromagnetic layer, and is of great significance to simplify the structure of a tunnel junction; and overturning of the ferromagnetic layers in the multilayer film is very sensitive to change of the outer field, and the magnetization configuration among the ferromagnetic layers is sensitively controlled through the magnetic field, so application of the magnetic multilayer film in magnetic tunnel junctions is facilitated.

Description

A kind of have magnetoresistance effect of antiferromagnetic layer coupling and preparation method thereof
Technical field
The present invention relates to field of magnetic material, particularly relate to and a kind of there is magnetoresistance effect of antiferromagnetic layer coupling and preparation method thereof.
Background technology
Interlayer Exchange Coupling phenomenon refers in magnetoresistance effect, and according to the difference of intermediate layer material thickness, each magnetospheric intensity of magnetization can realize parallel or coupled in anti-parallel.French scientist A Erbei Fils in 1986 and Germany scientist Peter Green Bei Geer observe antiferromagnetic layer coupling behavior in succession in Fe/Cr multilayer film, and find resistance can be caused to change significantly when utilizing magnetic field to change the magnetization configuration of this system, i.e. so-called giant magnetoresistance effect (GMR), this effect derives from the electron scattering of interface and spin correlation, has been widely used at present in current disk read-write technology.
In early stage research, intermediate layer material is transition metal, and experiment finds that most transition metal can realize this kind of antiferromagnetic coupling, just antiferromagnetic coupling strength and magnetic resistance behavior with the difference of transition metal difference to some extent.
" physical comment bulletin " (Phys.Rev.Lett.89 in 2002,107206 (1)-(4), 2002) report, utilize insulation MgO as intermediate layer material, when its thickness is thinner than 1nm, between Fe magnetosphere, antiferromagnetic coupling clearly can be realized.This coupling is realized by the quantum tunneling of spin polarization, is different from the RKKY oscillation mode coupling in transition metal, and thereby produces another magnetic resistance behavior and tunnel magneto; " science material " (NatureMater.3.868 (1)-(4) in 2004,2004) report, the huge tunnel magneto effect of under room temperature 180% is obtained in Fe/MgO/Fe tunnel knot, GMR comparatively wants a large order of magnitude, and this makes it on the readwrite performance promoting present hard discs, have great potential.But due to difference structural between ferromagnetic layer and barrier layer, to such an extent as to be difficult to realize epitaxial growth truly, the generation of a large amount of defect limits its practical application to a certain extent.
2008 " physical comment bulletin " (Phys.Rev.Lett.101,237202 (1)-(4), 2008) are reported, utilize dilute magnetic semiconductor Ga 0.97mn 0.03as magnetosphere, with Be doping GaAs observing antiferromagnetic layer coupling during intermediate layer, and with unadulterated GaAs intermediate layer time, this antiferromagnetic coupling disappear.Therefore think that this antiferromagnetic layer coupling is realized as medium by Be the introduced carrier that adulterates.The advantage of this Multilayer system is that the two has very similar crystal structure, therefore can obtain the excellent multilayer film sample of structure.But the more weak ferromagnetism of dilute magnetic semiconductor makes it be difficult to obtain practical application.
It is made to have supereminent performance as during tunnel knot magnetic pole close to the spin polarizability of 100% in calcium titanium ore manganose oxide, but such devices makes the structure of spin valve type usually, fix the direction of magnetization of hearth electrode with inverse ferric magnetosphere, the magnetization being changed top electrode by outfield controls the magnetized relative orientation of two ferromagnetic layers.This structure needs the Antiferromagnetic pinning layer of extra bottom, makes device architecture comparatively complicated.
To sum up, at present, the research for antiferromagnetic layer coupling mainly concentrates on transition metal field, and the research for other material rarely has and relates to.But electron correlation complicated in transition metal oxide imparts its very abundant physical property, is expected to be well worth doing in the electronic device in future.But, how to obtain based on transition metal oxide and the magnetoresistance effect that can realize antiferromagnetic layer coupling between ferromagnetic layer under null field fail to have breakthrough always.
Summary of the invention
In view of this, technical problem to be solved by this invention is that providing a kind of has magnetoresistance effect of antiferromagnetic layer coupling and preparation method thereof, the magnetoresistance effect with antiferromagnetic layer coupling provided by the invention can not only well epitaxial growth, and can realize the antiferromagnetic coupling under zero magnetic field between two ferromagnetic layers.
The invention provides a kind of magnetoresistance effect with antiferromagnetic layer coupling, comprising:
Substrate,
Superpose barrier layer and magnetosphere successively over the substrate, and repeat superposition barrier layer and magnetosphere, obtain the magnetoresistance effect with antiferromagnetic layer coupling;
Wherein, the barrier material of described barrier layer is CaRu 0.5ti 0.5o 3,
The number of plies of described barrier layer is N, N >=3;
The ferromagnetic material of described ferromagnetic layer is Ca-Ti ore type transition metal oxide,
The described magnetospheric number of plies is N-1.
Preferably, the thickness of described barrier layer is 0.8 ~ 1.8nm.
Preferably, described magnetospheric thickness is 2.4 ~ 3.2nm.
Preferably, described substrate backing material is NdGaO 3, (LaAlO 3) 0.3(Sr 2alTaO 6) 0.7, SrTiO 3, LaAlO 3or DyScO 3.Preferably, described Ca-Ti ore type transition metal oxide is La 0.67ca 0.33mnO 3, La 0.7sr 0.3mnO 3, La 0.7ba 0.3mnO 3or Nd 0.7sr 0.3mnO 3.Present invention also offers a kind of preparation method with the magnetoresistance effect of antiferromagnetic layer coupling, comprising:
Substrate deposits barrier layer and magnetosphere successively, and repeated deposition barrier layer and magnetosphere, obtain post-depositional magnetoresistance effect;
Wherein, the barrier material of described barrier layer is CaRu 0.5ti 0.5o 3;
The number of plies of described barrier layer is N, N >=3;
The ferromagnetic material of described ferromagnetic layer is Ca-Ti ore type transition metal oxide,
The described magnetospheric number of plies is N-1;
After depositing, magnetoresistance effect annealing, obtains the magnetoresistance effect with antiferromagnetic layer coupling.
Preferably, described Ca-Ti ore type transition metal oxide is La 0.67ca 0.33mnO 3, La 0.7sr 0.3mnO 3, La 0.7ba 0.3mnO 3or Nd 0.7sr 0.3mnO 3.
Preferably, the oxygen pressure of described deposition is 20 ~ 40Pa.
Preferably, the temperature of described annealing is 680 ~ 735 DEG C.
Preferably, barrier material CaRu 0.5ti 0.5o 3preparation method be:
By CaO, RuO 2and TiO 2powder, according to the chemical mol ratio 2:1:1 mixed calcining of Ca element, Ru element and Ti element, obtains barrier material.
Compared with prior art, the invention provides a kind of magnetoresistance effect with antiferromagnetic layer coupling, by by CaRu 0.5ti 0.5o 3as barrier material, using Ca-Ti ore type transition metal oxide as ferromagnetic material, make the magnetoresistance effect with antiferromagnetic layer coupling for preparing can not only well epitaxial growth, and coupled in anti-parallel between ferromagnetic layer can be realized under null field, compared with current spin valve type structure, without the need to the pinning of bottom inverse ferric magnetosphere, this is to the structure important in inhibiting simplifying tunnel knot; And the upset of ferromagnetic layer is very responsive to the change in outfield in this multilayer film, the magnetization configuration that can control between ferromagnetic layer by magnetic field, is conducive to its application in MTJ.
Accompanying drawing explanation
Fig. 1 is the structural representation of magnetoresistance effect prepared by the embodiment of the present invention 1 and embodiment 2;
X-ray θ-2 θ line sweep figure of the magnetoresistance effect that Fig. 2 a provides for the embodiment of the present invention 1;
The diffraction surfaces of the magnetoresistance effect that Fig. 2 b provides for the embodiment of the present invention 1 is the X-ray reciprocal space scintigram of orthogonal (116);
The intensity of magnetization variation with temperature graph of a relation of the magnetoresistance effect that Fig. 3 provides for the embodiment of the present invention 1;
The magnetoresistance effect that Fig. 4 provides for the embodiment of the present invention 1 when 50K the intensity of magnetization with the variation relation figure in magnetic field;
The magnetoresistance effect that Fig. 5 provides for the embodiment of the present invention 1 is at the variation relation figure of the whole warm area intensity of magnetization with magnetic field;
The magnetoresistance effect that Fig. 6 provides for the embodiment of the present invention 2 when 100K the intensity of magnetization with the variation relation figure in magnetic field.
Detailed description of the invention
There is a magnetoresistance effect for antiferromagnetic layer coupling, comprising:
Substrate,
Superpose barrier layer and magnetosphere successively over the substrate, and repeat superposition barrier layer and magnetosphere, obtain the magnetoresistance effect with antiferromagnetic layer coupling;
Wherein, the barrier material of described barrier layer is CaRu 0.5ti 0.5o 3,
The number of plies of described barrier layer is N, N >=3;
The ferromagnetic material of described ferromagnetic layer is Ca-Ti ore type transition metal oxide,
The described magnetospheric number of plies is N-1.
According to the present invention, described substrate backing material is preferably NdGaO 3, (LaAlO 3) 0.3(Sr 2alTaO 6) 0.7, SrTiO 3, LaAlO 3or DyScO 3, be more preferably NdGaO 3monocrystal chip, is more preferably the NdGaO3 monocrystal chip that high preferred orientation is [001] direction; Described Ca-Ti ore type transition metal oxide is preferably La 0.67ca 0.33mnO 3, La 0.7sr 0.3mnO 3, La 0.7ba 0.3mnO 3or Nd 0.7sr 0.3mnO 3, be more preferably La 0.67ca 0.33mnO 3; The thickness of described substrate is preferably 0.3 ~ 0.6mm, is more preferably 0.4 ~ 0.5mm; The thickness of described barrier layer is preferably 0.8 ~ 1.8nm, is more preferably 1.0 ~ 1.6nm, most preferably is 1.2 ~ 1.4nm; Described magnetospheric thickness is preferably 2.4 ~ 3.2nm, is more preferably 2.6 ~ 3nm; Most preferably be 2.8 ~ 2.9nm; The number of plies of described barrier layer is preferably 3≤N≤50, is more preferably 4≤N≤30, most preferably is 5≤N≤25, most preferably is 6≤N≤15, most preferably is 7≤N≤10.
Present invention also offers a kind of preparation method with the magnetoresistance effect of antiferromagnetic layer coupling, comprising:
Substrate deposits barrier layer and magnetosphere successively, and repeated deposition barrier layer and magnetosphere, obtain post-depositional magnetoresistance effect;
Wherein, the barrier material of described barrier layer is CaRu 0.5ti 0.5o 3;
The number of plies of described barrier layer is N, N >=3;
The ferromagnetic material of described ferromagnetic layer is Ca-Ti ore type transition metal oxide,
The described magnetospheric number of plies is N-1;
After depositing, magnetoresistance effect annealing, obtains the magnetoresistance effect with antiferromagnetic layer coupling.
According to the present invention, substrate deposits barrier layer and magnetosphere successively, and repeated deposition barrier layer and magnetosphere, obtain post-depositional magnetoresistance effect; Described substrate backing material is preferably NdGaO 3, (LaAlO 3) 0.3(Sr 2alTaO 6) 0.7, SrTiO 3, LaAlO 3or DyScO 3, be more preferably NdGaO 3monocrystal chip, is more preferably the NdGaO3 monocrystal chip that high preferred orientation is [001] direction; Described Ca-Ti ore type transition metal oxide is preferably La 0.67ca 0.33mnO 3, La 0.7sr 0.3mnO 3, La 0.7ba 0.3mnO 3or Nd 0.7sr 0.3mnO 3, be more preferably La 0.67ca 0.33mnO 3; The thickness of described substrate is preferably 0.3 ~ 0.6mm, is more preferably 0.4 ~ 0.5mm; The thickness of described barrier layer is preferably 0.8 ~ 1.8nm, is more preferably 1.0 ~ 1.6nm, most preferably is 1.2 ~ 1.4nm; Described magnetospheric thickness is preferably 2.4 ~ 3.2nm, is more preferably 2.6 ~ 3nm; Most preferably be 2.8 ~ 2.9nm; The number of plies of described barrier layer is preferably 3≤N≤50, is more preferably 4≤N≤30, most preferably is 5≤N≤25, most preferably is 6≤N≤15, most preferably is 7≤N≤10.
In the present invention, the method of the present invention to deposition is not particularly limited, deposition process well known in the art, the present invention preferably adopts the method for pulsed laser deposition, in described pulsed laser deposition: the energy density that described pulse laser is beaten on target is preferably 1.5 ~ 2.5J/cm 2, be more preferably 1.8 ~ 2J/cm 2; Described laser frequency is preferably 4 ~ 10Hz, is more preferably 5 ~ 8Hz; The atmosphere of described deposition is preferably oxygen atmosphere; The pressure of described deposition is preferably 20 ~ 40Pa, is more preferably 25 ~ 35Pa; The temperature of described deposition is preferably 680-735 DEG C, is more preferably 700-710 DEG C.
The source of the present invention to the barrier material of barrier layer is not particularly limited, barrier material prepared by preparation method well known in the art, and the present invention is preferably prepared in accordance with the following methods:
By CaO, RuO 2and TiO 2powder, according to the chemical mol ratio 2:1:1 mixed calcining of Ca element, Ru element and Ti element, obtains barrier material.
Concrete, the temperature of described mixed calcining is preferably 1300 ~ 1400 DEG C, is more preferably 1320 ~ 1380 DEG C, most preferably is 1350 ~ 1460 DEG C; The time of described calcining is preferably 18 ~ 24 hours; And in order to make the barrier material performance that obtains better, the present invention is preferably by CaO, RuO 2and TiO 2powder is according to after the chemical mol ratio 2:1:1 mixing of Ca element, Ru element and Ti element, first pre-burning, the temperature of described pre-burning is preferably 1000 ~ 1300 degrees Celsius, is more preferably 1050 DEG C of pre-burning 12h, then at 1150 DEG C of pre-burning 12h, finally at 1250 DEG C of pre-burning 12h; After pre-burning, the present invention is also preferred is pressed into target sheet by the mixture after pre-burning, then calcines.
The source of the present invention to the ferromagnetic material of ferromagnetic layer is not particularly limited, ferromagnetic material prepared by preparation method well known in the art, and the present invention is preferably prepared in accordance with the following methods:
By CaO, MnO 2and La 2o 3powder is 1:3:2 mixed calcining according to the chemical mol ratio of wherein Ca element, Mn element and La element, obtains ferromagnetic material.
Concrete, the temperature of described mixed calcining is preferably 1300 ~ 1400 DEG C, is more preferably 1320 ~ 1380 DEG C, most preferably is 1350 ~ 1460 DEG C; The time of described calcining is preferably 18 ~ 24 hours; And in order to make the performance of the magnetic material obtained better, the present invention is preferably by CaO, MnO 2and La 2o 3after powder is 1:3:2 mixing according to the chemical mol ratio of wherein Ca element, Mn element and La element, first pre-burning, the temperature of described pre-burning is preferably 1100 ~ 1300 degrees Celsius, is more preferably 1100 DEG C of pre-burning 12h, then at 1200 DEG C of pre-burning 12h, finally at 1300 DEG C of pre-burning 12h; After pre-burning, the present invention is also preferred is pressed into target sheet by the mixture after pre-burning, then calcines.
The invention provides a kind of magnetoresistance effect with antiferromagnetic layer coupling, by by CaRu 0.5ti 0.5o 3as barrier material, using Ca-Ti ore type transition metal oxide as ferromagnetic material, make the magnetoresistance effect with antiferromagnetic layer coupling for preparing can not only well epitaxial growth, and coupled in anti-parallel between ferromagnetic layer can be realized under null field, compared with current spin valve type structure, without the need to the pinning of bottom inverse ferric magnetosphere, this is to the structure important in inhibiting simplifying tunnel knot; And the upset of the ferromagnetic layer of this multilayer film is very responsive to the change in outfield, the magnetization configuration that can control between ferromagnetic layer by magnetic field, is conducive to its application in MTJ.
Technical scheme below in conjunction with the embodiment of the present invention is clearly and completely described, and obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Embodiment 1
Preparation [CaRu 0.5ti 0.5o 3(1.2nm)/La 0.67ca 0.33mnO 3(2.8nm)] 10/ CaRu 0.5ti 0.5o 3(1.2nm), the i.e. magnetoresistance effect of the antiferromagnetic layer coupling of N=11
1) La is prepared 0.67ca 0.33mnO 3ferromagnetic material: by CaO (purity is 99.99%), MnO 2(purity>=98.0%) and La 2o 3(purity is 99.99%) powder is according to La 0.67ca 0.33mnO 3the chemical mixed in molar ratio of middle Ca element, Mn element and La element, after grinding evenly, respectively successively 1100 DEG C, 1200 DEG C, 1300 DEG C pre-burnings three times, each burn-in time is 12 hours, then 40MPa pressure depresses to circular sheet, and 1350 DEG C of calcinings 24 hours, sinters La into 0.67ca 0.33mnO 3target, i.e. La 0.67ca 0.33mnO 3ferromagnetic material.
2) CaRu is prepared 0.5ti 0.5o 3barrier material: by CaO (purity is 99.99%), RuO 2(purity is 99.95%), TiO 2(purity is 99.99%) powder is according to CaRu 0.5ti 0.5o 3after the chemical mol ratio mixing of middle Ca element, Ru element and Ti element, after grinding evenly, respectively successively 1050 DEG C, 1150 DEG C and 1250 DEG C of pre-burnings three times, the time of each described burn in step is 12 hours, then circular sheet is depressed at 40MPa pressure, and 1350 DEG C of calcinings 24 hours, sintering obtained described CaRu 0.5ti 0.5o 3target, i.e. CaRu 0.5ti 0.5o 3barrier material.
3) NdGaO that the method for pulsed laser deposition is 0.5mm at thickness is utilized 3(001) monocrystal chip grows CaRu successively 0.5ti 0.5o 3and La 0.67ca 0.33mnO 3film, repeats to grow CaRu successively 0.5ti 0.5o 3and La 0.67ca 0.33mnO 3film 9 times, finally at top layer La 0.67ca 0.33mnO 3upper covering one deck CaRu 0.5ti 0.5o 3film; Wherein, laser instrument used is the COMPexPROKrF excimer laser that Coherent company produces, and wavelength is 248nm, and beating rotating the energy density on target is 2J/cm 2, laser frequency is 5Hz, and film thickness is controlled by sedimentation time, in this example, and all CaRu 0.5ti 0.5o 3layer thickness is 1.2nm, all La 0.67ca 0.33mnO 3layer thickness is 2.8nm.And the growth conditions of each layer film is all identical: deposition oxygen pressure is 30Pa, and depositing temperature is 700 DEG C, after deposition terminates, by film, preparation temperature and oxygen depress annealing 15 minutes in position, then be slowly down to 400 DEG C in the pressure of 30Pa oxygen, be slowly down to room temperature in the pressure of 2000Pa oxygen, obtain [CaRu 0.5ti 0.5o 3(1.2nm)/La 0.67ca 0.33mnO 3(2.8nm)] 10/ CaRu 0.5ti 0.5o 3(1.2nm) magnetoresistance effect of antiferromagnetic layer coupling.
As shown in Figure 1, Fig. 1 is the structural representation of magnetoresistance effect prepared by the embodiment of the present invention 1 and embodiment 2 to structure described in embodiment 1.
By carrying out structural characterization to magnetoresistance effect of the present invention, result is see Fig. 2 a ~ Fig. 2 b; X-ray θ-2 θ line sweep figure of the magnetoresistance effect that Fig. 2 a provides for the embodiment of the present invention 1, clearly can observe because film integral thickness interferes the Laue vibration caused, show that sample has good flatness from Fig. 2 a.In addition the first order satellite peak caused due to composition modulation shows CaRu 0.5ti 0.5o 3and La 0.67ca 0.33mnO 3between insignificant counterdiffusion effect and interfacial structure clearly.The diffraction surfaces of the magnetoresistance effect that Fig. 2 b provides for the embodiment of the present invention 1 is the X-ray reciprocal space scintigram of orthogonal (116), as can be seen from Fig. 2 b, can be observed principal spot, satellite spot in figure and interfere the many diffraction spots caused due to thickness, characterized by said structure, show that the magnetoresistance effect that embodiment 1 obtains is high-quality extensional superlattice sample.
The intensity of magnetization variation with temperature graph of a relation of the magnetoresistance effect that Fig. 3 provides for the embodiment of the present invention 1, as can be seen from the figure, test magnetic field intensity is 250Oe, and direction is along NdGaO 3[010] direction of substrate, in figure, dull gray colo(u)r streak is NdGaO 3the paramagnetic background signal of substrate.Near 180K, the intensity of magnetization of sample starts rapid increase, i.e. ferromagnetic Curie temperature T cbe about 180K.But when temperature is down to below 140K, its intensity of magnetization starts to decline on the contrary, imply that the appearance of antiferromagnetic order under low temperature.
In order to characterize the antiferromagnetic behavior under low temperature further, when measuring, the intensity of magnetization of the magnetoresistance effect that the embodiment of the present invention 1 provides is with the variation relation in magnetic field, the results are shown in Figure 4, the magnetoresistance effect that Fig. 4 provides for the embodiment of the present invention 1 when 50K the intensity of magnetization with the variation relation figure in magnetic field, as can be seen from the figure, under null field, the remanent magnetization of this magnetoresistance effect is only 0.09 μ b/ Mn, is about 3% of saturation magnetization, shows that in superlattices, each ferromagnetic layer direction of magnetization can realize intact arranged anti-parallel when null field; In addition, the left and right half range of this hysteresis curve respectively has two little loop lines, correspond to the process of different ferromagnetic layer substep upset in variable field process, traces it to its cause and be bottom La 0.67ca 0.33mnO 3with top layer La 0.67ca 0.33mnO 3be subject to the interlayer coupling of adjacent layer and inner La 0.67ca 0.33mnO 3difference to some extent between layer.
The magnetoresistance effect that Fig. 5 provides for the embodiment of the present invention 1 at the variation relation figure of the whole warm area intensity of magnetization with magnetic field, as can be seen from the figure, when temperature is at T c(180K) time below, under null field, between each ferromagnetic layer, all can realize good antiferromagnetic layer coupling, show very little remanent magnetization.Impact just owing to being subject to thermal agitation, in temperature close to T ctime, sample magnetization reversal and low temperature end difference to some extent.
Embodiment 2:
Preparation [CaRu 0.5ti 0.5o 3(1.2nm)/La 0.67ca 0.33mnO 3(2.8nm)] 2/ CaRu 0.5ti 0.5o 3(1.2nm), the i.e. magnetoresistance effect of the antiferromagnetic layer coupling of N=3
1) La is prepared 0.67ca 0.33mnO 3ferromagnetic material: by CaO (purity is 99.99%), MnO 2(purity>=98.0%) and La 2o 3(purity is 99.99%) powder is according to La 0.67ca 0.33mnO 3the chemical mixed in molar ratio of middle Ca element, Mn element and La element, respectively successively 1100 DEG C, 1200 DEG C, 1300 DEG C pre-burnings three times after grinding evenly, each burn-in time is 12 hours, and then 40MPa pressure depresses to circular sheet, and 1350 DEG C of calcinings 24 hours, sinter La into 0.67ca 0.33mnO 3target, i.e. La 0.67ca 0.33mnO 3ferromagnetic material.
2) CaRu is prepared 0.5ti 0.5o 3barrier material: by CaO (purity is 99.99%), RuO 2(purity is 99.95%), TiO 2(purity is 99.99%) powder is according to CaRu 0.5ti 0.5o 3after the chemical mol ratio mixing of middle Ca element, Ru element and Ti element, respectively successively 1050 DEG C, 1150 DEG C and 1250 DEG C of pre-burnings three times after grinding evenly, the time of each described burn in step is 12 hours, then circular sheet is depressed at 40MPa pressure, and 1350 DEG C of calcinings 24 hours, sintering obtained described CaRu 0.5ti 0.5o 3target, i.e. CaRu 0.5ti 0.5o 3barrier material.
3) NdGaO that pulse laser sediment method is 0.5mm at thickness is utilized 3(001) monocrystal chip grows CaRu successively 0.5ti 0.5o 3and La 0.67ca 0.33mnO 3film, repeats above process 1 time, finally at top layer La 0.67ca 0.33mnO 3upper covering one deck CaRu 0.5ti 0.5o 3film.Laser instrument used is the COMPexPROKrF excimer laser that Coherent company produces, and wavelength is 248nm, and beating rotating the energy density on target is 2J/cm 2, laser frequency is 5Hz, and film thickness is controlled by sedimentation time.In this example, all CaRu 0.5ti 0.5o 3layer thickness is 1.2nm, all La 0.67ca 0.33mnO 3layer thickness is 2.8nm.And the growth conditions of each layer film is all identical: deposition oxygen pressure is 30Pa, and depositing temperature is 700 DEG C, after deposition terminates, by film, preparation temperature and oxygen depress annealing 15 minutes in position, then be slowly down to 400 DEG C in the pressure of 30Pa oxygen, be slowly down to room temperature in the pressure of 2000Pa oxygen, obtain [CaRu 0.5ti 0.5o 3(1.2nm)/La 0.67ca 0.33mnO 3(2.8nm)] 2/ CaRu 0.5ti 0.5o 3(1.2nm) magnetoresistance effect of antiferromagnetic layer coupling.
As shown in Figure 1, Fig. 1 is the structural representation of magnetoresistance effect prepared by the embodiment of the present invention 1 and embodiment 2 to structure described in embodiment 2.
The performance of the magnetoresistance effect that embodiment 2 obtains is measured, the results are shown in Figure 6, the magnetoresistance effect that Fig. 6 provides for the embodiment of the present invention 2 when 100K the intensity of magnetization with the variation relation figure in magnetic field, as can be seen from the figure, under forward saturation field, two ferromagnetic layer forwards are arranged in parallel, progressively fall field to about 130Oe, the sample intensity of magnetization starts to be decreased to zero rapidly, now two ferromagnetic layer arranged anti-parallel.Add counter field more than after 300Oe, two ferromagnetic layers realize antiparallel arrangements, namely in the process of positive and negative variable field, can strictly control wherein the magnetospheric direction of magnetization with obtain both parallel or arranged anti-parallel, namely the upset of the ferromagnetic layer of multilayer film is very responsive to the change in outfield, and this is most important for realizing its application in MTJ.
The explanation of above embodiment just understands method of the present invention and core concept thereof for helping.It should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention, can also carry out some improvement and modification to the present invention, these improve and modify and also fall in the protection domain of the claims in the present invention.

Claims (10)

1. there is a magnetoresistance effect for antiferromagnetic layer coupling, comprising:
Substrate,
Superpose barrier layer and magnetosphere successively over the substrate, and repeat superposition barrier layer and magnetosphere, obtain the magnetoresistance effect with antiferromagnetic layer coupling;
Wherein, the barrier material of described barrier layer is CaRu 0.5ti 0.5o 3,
The number of plies of described barrier layer is N, N >=3;
The ferromagnetic material of described ferromagnetic layer is Ca-Ti ore type transition metal oxide,
The described magnetospheric number of plies is N-1.
2. magnetoresistance effect according to claim 1, is characterized in that, the thickness of described barrier layer is 0.8 ~ 1.8nm.
3. magnetoresistance effect according to claim 1, is characterized in that, described magnetospheric thickness is 2.4 ~ 3.2nm.
4. magnetoresistance effect according to claim 1, is characterized in that, described substrate backing material is NdGaO 3, (LaAlO 3) 0.3(Sr 2alTaO 6) 0.7, SrTiO 3, LaAlO 3or DyScO 3.
5. magnetoresistance effect according to claim 1, is characterized in that, described Ca-Ti ore type transition metal oxide is La 0.67ca 0.33mnO 3, La 0.7sr 0.3mnO 3, La 0.7ba 0.3mnO 3or Nd 0.7sr 0.3mnO 3.
6. there is a preparation method for the magnetoresistance effect of antiferromagnetic layer coupling, comprising:
Substrate deposits barrier layer and magnetosphere successively, and repeated deposition barrier layer and magnetosphere, obtain post-depositional magnetoresistance effect;
Wherein, the barrier material of described barrier layer is CaRu 0.5ti 0.5o 3;
The number of plies of described barrier layer is N, N >=3;
The ferromagnetic material of described ferromagnetic layer is Ca-Ti ore type transition metal oxide,
The described magnetospheric number of plies is N-1;
After depositing, magnetoresistance effect annealing, obtains the magnetoresistance effect with antiferromagnetic layer coupling.
7. preparation method according to claim 6, is characterized in that, described Ca-Ti ore type transition metal oxide is La 0.67ca 0.33mnO 3, La 0.7sr 0.3mnO 3, La 0.7ba 0.3mnO 3or Nd 0.7sr 0.3mnO 3.
8. preparation method according to claim 6, is characterized in that, the oxygen pressure of described deposition is 20 ~ 40Pa.
9. preparation method according to claim 6, is characterized in that, the temperature of described annealing is 680 ~ 735 DEG C.
10. preparation method according to claim 6, is characterized in that, barrier material CaRu 0.5ti 0.5o 3preparation method be:
By CaO, RuO 2and TiO 2powder, according to the chemical mol ratio 2:1:1 mixed calcining of Ca element, Ru element and Ti element, obtains barrier material.
CN201510428403.0A 2015-07-17 2015-07-17 Magnetic multilayer film with antiferromagnetc interlayer coupling, and production method thereof Active CN105172255B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510428403.0A CN105172255B (en) 2015-07-17 2015-07-17 Magnetic multilayer film with antiferromagnetc interlayer coupling, and production method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510428403.0A CN105172255B (en) 2015-07-17 2015-07-17 Magnetic multilayer film with antiferromagnetc interlayer coupling, and production method thereof

Publications (2)

Publication Number Publication Date
CN105172255A true CN105172255A (en) 2015-12-23
CN105172255B CN105172255B (en) 2017-04-12

Family

ID=54894900

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510428403.0A Active CN105172255B (en) 2015-07-17 2015-07-17 Magnetic multilayer film with antiferromagnetc interlayer coupling, and production method thereof

Country Status (1)

Country Link
CN (1) CN105172255B (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030053266A1 (en) * 2001-09-17 2003-03-20 Headway Technologies, Inc. Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane GMR heads
CN1827364A (en) * 2005-02-28 2006-09-06 中国科学院物理研究所 Perovskites semimetal composite multilayer membrane prepared by one ingredient and use thereof
CN101328611A (en) * 2008-08-01 2008-12-24 中国科学技术大学 Low field super large magnetoresistance manganese oxide epitaxial film and preparation thereof
CN101826596A (en) * 2010-03-31 2010-09-08 中国科学院半导体研究所 Production method of phase-change memory

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030053266A1 (en) * 2001-09-17 2003-03-20 Headway Technologies, Inc. Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane GMR heads
CN1827364A (en) * 2005-02-28 2006-09-06 中国科学院物理研究所 Perovskites semimetal composite multilayer membrane prepared by one ingredient and use thereof
CN101328611A (en) * 2008-08-01 2008-12-24 中国科学技术大学 Low field super large magnetoresistance manganese oxide epitaxial film and preparation thereof
CN101826596A (en) * 2010-03-31 2010-09-08 中国科学院半导体研究所 Production method of phase-change memory

Also Published As

Publication number Publication date
CN105172255B (en) 2017-04-12

Similar Documents

Publication Publication Date Title
Bibes et al. Ultrathin oxide films and interfaces for electronics and spintronics
Velev et al. Interface effects in spin-polarized metal/insulator layered structures
Coey et al. Mixed-valence manganites
Blamire et al. The materials science of functional oxide thin films
Liu et al. Giant magnetoresistance at 300 K in single crystals of La0. 65 (PbCa) 0.35 MnO3
Opel et al. Novel multifunctional materials based on oxide thin films and artificial heteroepitaxial multilayers
Nagahama et al. Magnetic properties of epitaxial Fe3O4 films with various crystal orientations and tunnel magnetoresistance effect at room temperature
Cesaria et al. LSMO–growing opportunities by PLD and applications in spintronics
Sun et al. Strain-driven nanodumbbell structure and enhanced physical properties in hybrid vertically aligned nanocomposite thin films
Fan et al. Strong perpendicular exchange bias in epitaxial La0. 7Sr0. 3MnO3: LaFeO3 nanocomposite thin films
Bingham et al. Interfacial room temperature magnetism and enhanced magnetocaloric effect in strained La 0.66 Ca 0.34 MnO 3/BaTiO 3 heterostructures
Gu et al. An overview of SrRuO3-based heterostructures for spintronic and topological phenomena
Isogami et al. Antiperovskite magnetic materials with 2p light elements for future practical applications
Nelson-Cheeseman et al. Room temperature magnetic barrier layers in magnetic tunnel junctions
Nelson-Cheeseman et al. Probing the role of the barrier layer in magnetic tunnel junction transport
Zhang et al. Strain-induced robust magnetic anisotropy and room temperature magnetoelectric coupling effect in epitaxial SmFeO3 film
Niu et al. Topological Hall effect in SrRuO3 thin films and heterostructures
Santamaria et al. Induced magnetism at oxide interfaces
CN105172255B (en) Magnetic multilayer film with antiferromagnetc interlayer coupling, and production method thereof
Martin et al. Emerging multiferroic memories
Zhang et al. Electric-field control of magnetization reversal at room temperature in SmFeO3 single-phase multiferroic thin film
Zhao et al. Preparation and characterization of BiFeO3/La0. 7Sr0. 3MnO3 heterostructure grown on SrTiO3 substrate
Bhat et al. Defect mediated exchange bias in oriented (111) Fe3O4/(100) GaAs
Panda et al. Low temperature junction magnetoresistance properties of Co0. 65Zn0. 35Fe2O4/SiO2/p-Si magnetic diode like heterostructure for spin-electronics
Ruwisch et al. Inferface Magnetization Phenomena in Epitaxial Thin Fe3O4/Co x Fe3–x O4 Bilayers

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant