CN105264680A - Electrical, mechanical, computing, and/or other devices formed of extremely low resistance materials - Google Patents

Electrical, mechanical, computing, and/or other devices formed of extremely low resistance materials Download PDF

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Publication number
CN105264680A
CN105264680A CN201280044226.0A CN201280044226A CN105264680A CN 105264680 A CN105264680 A CN 105264680A CN 201280044226 A CN201280044226 A CN 201280044226A CN 105264680 A CN105264680 A CN 105264680A
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elr
elr material
present
realizations
modification
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CN201280044226.0A
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CN105264680B (en
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D·J·吉尔伯特
Y·E·施泰恩
M·J·史密斯
J·P·哈纳
P·格林兰德
B·考帕
F·诺斯
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Ambature Inc
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Ambature Inc
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Priority claimed from US13/076,188 external-priority patent/US8404620B2/en
Application filed by Ambature Inc filed Critical Ambature Inc
Priority to CN201710850006.1A priority Critical patent/CN107611249B/en
Priority claimed from PCT/US2012/031554 external-priority patent/WO2012135683A1/en
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Abstract

Electrical, mechanical, computing, and/or other devices that include components formed of extremely low resistance (ELR) materials, including, but not limited to, modified ELR materials, layered ELR materials, and new ELR materials, are described.

Description

By pole low electrical resistant material formed electric, mechanical, calculate and/or other equipment
The cross reference of related application
This application claims following priority: U.S. Provisional Patent Application, application number is 61/469,283,61/469,567,61/469,571,61/469,573, and 61/469,576, be entitled as " ExtremelyLowResistanceNanowires "; U.S. Provisional Patent Application, application number is 61/469,293,61/469,580,61/469,584,61/469,585,61/469,586,61/469,589,61/469,590, and 61/469,592, be entitled as " InductorsFormedofExtremelyLowResistanceMaterials ";
U.S. Provisional Patent Application, application number is 61/469,303,61/469,591,61/469,595,61/469,600,61/469,602,61/469,605,61/469,609,61/469,613,61/469,618, and 61/469,652 are entitled as " CapacitorsFormedofExtremelyLowResistanceMaterials "; U.S. Provisional Patent Application, application number is 61/469,313,61/469,620,61/469,622,61/469,627,61/469,630,61/469,632,61/469,635,61/469,640, and 61/469,645 are entitled as " TransistorsFormedofExtremelyLowResistanceMaterials "; U.S. Provisional Patent Application, application number is 61/469,318,61/469,599,61/469,604,61/469,608,61/469,612,61/469,617,61/469,619,61/469,624, with 61/469,628, be entitled as " RotatingMachinesFormedofExtremelyLowResistanceMaterials "; U.S. Provisional Patent Application, application number is 61/469,324,61/469,637,61/469,641, and 61/469,644 are entitled as " BearingsAssembliesFormedofExtremelyLowResistanceMaterial s; U.S. Provisional Patent Application, application number is 61/469,331 and 61/469,650 to be entitled as " TransformerFormedofExtremelyLowResistanceMaterials ";
U.S. Provisional Patent Application, application number is 61/469,335,61/469,656,61/469,658,61/469,659, and 61/469,662 are entitled as " PowerTransmissionComponentsFormedofExtremelyLowResistanc eMaterials "; U.S. Provisional Patent Application, application number is 61/469,342,61/469,667,61/469,679,61/469,684, and 61/469,769 are entitled as " FaultCurrentLimiterFormedofExtremelyLowResistanceMateria ls "; U.S. Provisional Patent Application, application number is 61/469,358,61/469,603,61/469,606,61/469,610,61/469,615,61/469,621,61/469,625,61/469,633,61/469,639,61/469,642,61/469,653,61/469,657,61/469,665, and 61/469,668 are entitled as " MRIComponentsandApparatusEmployingExtremelyLowResistance Materials "; U.S. Provisional Patent Application, application number is 61/469,361,61/469,623,61/469,634,61/469,643, and 61/469,648 are entitled as " ExtremelyLowResistanceJosephsonJunctions "; U.S. Provisional Patent Application, application number is 61/469,363,61/469,655,61/469,660,61/469,666,61/469,671,61/469,675,61/469,678,61/469,685, and 61/469,691 are entitled as " ExtremelyLowResistanceQuantumInterferenceDevices "; U.S. Provisional Patent Application, application number is 61/469,367,61/469,697,61/469,700,61/469,703,61/469,704, and 61/469,710 are entitled as " AntennasFormedfromExtremelyLowResistanceMaterials "; U.S. Provisional Patent Application, application number is 61/469,371,61/469,717,61/469,721,61/469,727,61/469,731,61/469,735,61/469,740, and 61/469,756 are entitled as " FiltersFormedofExtremelyLowResistanceMaterials "; U.S. Provisional Patent Application, application number is
61/469,398,61/469,654,61/469,673,61/469,683,61/469,687,61/469,692,61/469,711,61/469,716,61/469,723,61/469,638,61/469,646,61/469,728,61/469,737,61/469,743,61/469,745,61/469,751,61/469,754,61/469,761,61/469,766,61/469,770,61/469,772,61/469,774 and 61/469,775 are entitled as " SensorsFormedofExtremelyLowResistanceMaterials "; U.S. Provisional Patent Application, application number is 61/469,401,61/469,672,61/469,674,61/469,676, and 61/469,681 are entitled as " ActuatorsFormedofExtremelyLowResistanceMaterials "; U.S. Provisional Patent Application, application number is 61/469,376,61/469,686,61/469,690,61/469,693,61/469,694,61/469,695,61/469,696, with 61/469,698 are entitled as " IntegratedCircuitsFormedofExtremelyLowResistanceMaterial s "; US provisional patent
Application, application number is 61/469,392,61/469,707,61/469,709, and 61/469,712 are entitled as " ExtremelyLowResistanceInterconnect (ELRI) ForSysteminPackage (SIP) Applications "; U.S. Provisional Patent Application, application number is 61/469,424,61/469,714,61/469,718,61/469,720,61/469,724,61/469,726, with 61/469,730 are entitled as " ExtremelyLowResistanceInterconnect (ELRI) ConnectingMEMStoCircuitsonaSemiconductorIC "; U.S. Provisional Patent Application, application number is 61/469,387,61/469,732,61/469,736, and 61/469,739 are entitled as " ExtremelyLowResistanceInterconnect (ELRI) forRFCircuitsonaSemiconductorIntegratedCircuit "; U.S. Provisional Patent Application, application number is 61/469,554,61/469,742,61/469,744,61/469,747,61/469,749, and 61/469,750 are entitled as " IntegratedCircuitDevicesFormedofExtremelyLowResistanceMa terials "; U.S. Provisional Patent Application,
Application number is 61/469,560,61/469,753,61/469,755,61/469,757,61/469,758,61/469,759,61/469,760,61/469,762, and 61/469,763 are entitled as " EnergyStorageDevicesFormedofExtremelyLowResistanceMateri als "; And U.S. Provisional Patent Application, application number is 13/076,188 to be entitled as " ExtremelyLowResistanceCompositionsandMethodsforCreatingS ame. "
Above-mentioned each application was submitted on March 30th, 2011.Above-mentioned each application by reference its full content is herein incorporated at this.
The application also require that U.S. Provisional Patent Application that on January 6th, 2012 submits to, that be entitled as " LayeredCompositions; SuchasCompositionsthatExhibitExtremelyLowResistance ", application number is 61/583, the priority of 855, this by reference its full content be herein incorporated.
Background technology
Use conventional superconducting component work electric, mechanical, to calculate and/or other equipment have various shortcoming, comprise the cooling system relying on costliness and remain in its superconducting state to make superconducting component.Such as, conventional superconduct container utilizes high-temperature superconductor (HTS) material for various assembly, relies on their Opposed Current to have ability that is minimum or zero resistance transmission current.But, the low-down working temperature of HTS material require (such as, the temperature of below 120K), wherein usually realize low-down working temperature by using expensive system (such as based on the cooling system of liquid nitrogen) that these assemblies are cooled to such temperature.Such cooling system adds implementation cost, and hinders business widely and consumer's use of the capacitor adopting these materials and/or apply.The problem of these and other is there is about current HTS based device.
Accompanying drawing explanation
Fig. 1 shows the crystal structure of the exemplary ELR material from the first view.
Fig. 2 shows the crystal structure of the exemplary ELR material from the second view.
Fig. 3 shows the crystal structure of the exemplary ELR material from the second view.
Fig. 4 shows the single structure cell of exemplary ELR material.
Fig. 5 shows the crystal structure of the exemplary ELR material from the second view.
Fig. 6 shows the crystal structure of the exemplary ELR material from the second view.
Fig. 7 shows the crystal structure of the exemplary ELR material from the second view.
Fig. 8 shows the crystal structure of the exemplary ELR material from the second view.
Fig. 9 shows the crystal structure of the exemplary ELR material from the second view.
Figure 10 shows the crystal structure of the modification of the ELR material according to various realization of the present invention from the second view.
Figure 11 shows the crystal structure of the modification of the ELR material according to various realization of the present invention from the first view.
Figure 12 shows the crystal structure of the exemplary ELR material from the 3rd view.
Figure 13 shows the coordinate system for describing various realization of the present invention.
Figure 14 A-14G shows the test result of the various operating characteristic of the ELR material showing modification.
Figure 15 shows the test result of the ELR material of modification, namely using chromium as material modified and YBCO as ELR material.
Figure 16 shows the test result of the ELR material of modification, namely using vanadium as material modified and YBCO as ELR material.
Figure 17 shows the test result of the ELR material of modification, namely using bismuth as material modified and YBCO as ELR material
Figure 18 shows the test result of the ELR material of modification, namely using copper as material modified and YBCO as ELR material.
Figure 19 shows the test result of the ELR material of modification, namely using cobalt as material modified and YBCO as ELR material.
Figure 20 shows the test result of the ELR material of modification, namely using titanium as material modified and YBCO as ELR material.
Figure 21 A-21B shows the test result of the ELR material of modification, namely using chromium as material modified and BSCCO as ELR material.
Figure 22 shows the ELR material for transmission charge according to various realization of the present invention and material modified layout.
Figure 23 shows the multilayer crystal structure of the exemplary surface modification ELR material according to various realization of the present invention.
Figure 24 shows the c film of the ELR material according to various realization of the present invention.
Figure 25 shows the c film with the suitable surface of ELR material according to various realization of the present invention.
Figure 26 shows the c film with the suitable surface of ELR material according to various realization of the present invention.
Figure 27 show according to various realization of the present invention to be laminated on the suitable surface of ELR material material modified.
Figure 28 show according to various realization of the present invention to be laminated on the suitable surface of ELR material material modified.
Figure 29 shows the c film with the etching surface comprising the suitable surface of ELR material according to various realization of the present invention.
It is material modified that Figure 30 shows according on the etching surface being laminated to the c film on the suitable surface with ELR material of various realization of the present invention.
Figure 31 shows the a-b film with the suitable surface of ELR material comprising optional substrate according to various realization of the present invention.
It is material modified that Figure 32 shows according on the suitable surface being laminated to the ELR material of a-b film of various realization of the present invention.
Figure 33 shows the various exemplary arrangement of layer of ELR material according to various realization of the present invention, material modified, buffering or insulating barrier and/or substrate.
Figure 34 shows the process of various realization according to the present invention for the formation of modification ELR material.
Figure 35 shows the example of the additional treatments that various realization according to the present invention can perform.
Figure 36 shows the process of various realization according to the present invention for the formation of modification ELR material.
Fig. 1-Z is the block diagram comprising the assembly of extremely low material member and modification assembly according to various realization of the present invention.
Fig. 2-Z is the block diagram comprising the assembly of pole low electrical resistant material and two or more modification assembly according to various realization of the present invention.
Fig. 3-Z is the block diagram comprising the assembly of different pole layer of low resistance material according to various realization of the present invention.
Fig. 4-Z is the block diagram comprising the assembly of the layer of multi-form identical pole low electrical resistant material according to various realization of the present invention.
Fig. 5-Z is the block diagram comprising the assembly of multiple layers of different pole low electrical resistant materials according to various realization of the present invention.
Fig. 6-Z is the block diagram comprising the exemplary group zoarium of multiple layers of pole low electrical resistant material according to various realization of the present invention.
Fig. 7 A-Z to 7I-Z comprises the test result of the various operating characteristic of the exemplary group zoarium shown shown in Fig. 6-Z.
Figure 37-A to 45B-A shows and uses ELR material to form nano wire.
Figure 46-A to 46J-A shows and uses ELR material to form Josephson junction (JJs).
Figure 47-A to 53-A shows and uses ELR material to form SQUID.
Figure 54-A to 59-A shows and uses ELR material to form Medical Devices.
Figure 37 A-B to 43-B shows and uses ELR material to form capacitor.
Figure 37-C to 43-C shows and uses ELR material to form inductor.
Figure 37-D to 44-D shows and uses ELR material to form transistor.
Figure 37-E to 45-E shows and uses ELR material to form integrated circuit (IC)-components.
Figure 37-F to 45-F shows and uses ELR material to form integrated circuit and MEMS.
Figure 37-G to 41-G shows and uses ELR material to form integrated circuit RF device.
Figure 37-H to 43-H shows and uses ELR material to form integrated circuit wiring assembly and device.
Figure 37-I to 41B-I shows and uses ELR material to form integrated circuit SiP equipment.
Figure 37 A-J to 42-J shows and uses ELR material to form rotary machine.
Figure 37 A-K to 41-K shows and uses ELR material to form bearing.
Figure 37-L to 88-L shows and uses ELR material to form transducer.
Figure 37-M to 50-M shows and uses ELR material to form actuator.
Figure 37-N to 50-N shows and uses ELR material shaping filter.
Figure 37-O to 56-O shows and uses ELR material to form antenna.
Figure 37-P to 43-P shows and uses ELR material to form energy storage device.
Figure 37-Q to 50-Q shows and uses ELR material to form fault current limiter.
Figure 37-R to 50-R shows and uses ELR material to form transformer.
Figure 37 A-S to 40B-S shows and uses ELR material to form transmission line.
Embodiment
Describe comprise by modification, perforate, lamination and/or one or more assemblies that pole low resistance (ELR) material that other are new is formed electric, mechanical, calculate and/or other equipment, assembly, system and/or device.For than the electric current at usually higher about the temperature of high-temperature superconductor (HTS) electric current temperature, ELR material provides extremely low resistance, improves device operating characteristic at these higher temperatures and other advantages.
In some instances, according to the application of the type of material, ELR material, adopt the size of the assembly of this ELR material, adopt the equipment of ELR material or the job requirement of machine etc. to manufacture ELR material.Equally, during the Design and manufacture of equipment, the material of the basic unit being used as ELR material can be selected based on the work of various consideration and expectation and/or manufacturing characteristics and/or be used as the material of one or more modified layer of ELR material.
Various equipment, application and/or system can adopt ELR assembly described here.These equipment, application and/or system is discussed in more detail by the 1-18 chapter of the application.
The technology about various example and/or embodiment will be described now.In order to thoroughly understand these examples that also can describe this system, description below provides concrete details.But, it will be apparent to one skilled in the art that and can implement this system when there is no these details.In other examples, in order to avoid the description of the unnecessarily example of this system fuzzy, do not illustrate or describe known 26S Proteasome Structure and Function in detail.
Even if use in conjunction with the detailed description of some specific embodiment of this system, the term used in the description provided below is also intended to explain with its most wide in range reasonable manner.Even can highlight some term below; But, will ground be disclosed and the implication be defined as particularly in this embodiment part with any term that the mode of any restriction is intended to by explaining.
Consider detailed description below, accompanying drawing and claim, various feature of the present invention, advantage and realize can being illustrated or apparent.Unless should be appreciated that and set forth in the claims, otherwise the detailed description and the accompanying drawings are exemplary, and aim to provide further explanation and do not limit the scope of the invention.
In order to the object of this description, (" material of ELR ") can comprise pole low resistance: superconductor, includes but not limited to, HTS material; Perfect electric conductor (such as, perfact conductor) and there are other electric conducting materials extremely low-resistance.As discussed in this, these ELR materials can be described to modification ELR material, ELR material with holes and/or new ELR material, any one in them may be used to form ELR film and/or other ELR assemblies (such as, nano wire, wire, band etc.).Under environment or normal pressure, under the high temperature of such as more than 150K temperature, these ELR materials reveal extremely low resistance to electronic watch and/or reveal high conductivity to electronic watch.Such as, this part describes structure and the operating characteristic of these ELR materials.
Generally speaking, various realization of the present invention relates to the ELR material of the operating characteristic by having improvement (such as, the ELR material of modification, new ELR material etc.) or the ELR material that shows some or all operating characteristic improved described herein be incorporated in various product as described in this, system and/or equipment.Various realization of the present invention can comprise other configurations with such ELR material of ELR film, ELR band, ELR nano wire, ELR wire form and such ELR material.
In order to the object of this description, can comprise about the operating characteristic of ELR material and/or various realization of the present invention, but be not limited to, other operating characteristic of the resistance (such as, about superconductor, superconducting state) of the ELR material in its ELR state, charge transport ability, one or more magnetic properties of ELR material, one or more engineering propertiess of ELR material and/or ELR material for the transition temperature of the ELR material of its ELR state, the ELR material in its ELR state.And, in order to the object of this description, the operating characteristic improved can comprise, but be not limited to, work in the ELR state (comprising such as superconducting state) at relatively high temperatures, at identical (or higher) temperature with the work of enhanced charge transmittability, with the magnetic properties work improved, with the engineering properties work improved, and/or the operating characteristic of other improvement.
In order to the object of this explanation, " pole low resistance " be quantity with at the similar resistance of the flux flow resistance of the II type superconductor of its superconducting state, and usually can be expressed as in resistivity zero ohm-cm to the resistivity at the basic fine copper in 293K place 1/50th (1/50) scope in.Such as, as used in this, substantially pure be 99.999% copper.In various realization of the present invention, ELR material component has at zero ohm-cm to 3.36x10 -8resistivity in the scope of ohm-cm.
As generally understood, transition temperature is below it, ELR material " work " or show the temperature of (or starting to show) pole low resistance and/or other phenomenons relevant to ELR material.When with extremely low resistance performance, ELR material is called as and is in ELR state.Temperature place more than transition temperature, ELR material no longer shows pole low resistance and ELR material is called as and is in its non-ELR or normal condition.In other words, transition temperature corresponds to the temperature that ELR material changes between its non-ELR state and its ELR state.As understood, for some ELR materials, transition temperature can be the temperature range that changes between its non-ELR state and its ELR state of ELR material thereon.As also understood, ELR material can have the delayed of its transition temperature, wherein have a transition temperature when ELR material warms, and have another transition temperature when ELR material cooled.
Figure 13 shows the coordinate system 1300 that may be used for describing various realization of the present invention.Coordinate system 1300 comprises the axle group being called as a axle, b axle and c-axis.Object in order to this description: a axle of reference comprises a axle and any other axle in parallel; The b axle of reference comprises b axle and any other axle in parallel; And the c-axis of reference comprises c-axis and any other axle in parallel.Each paired axle forms the set of planes in coordinate system 1300, and it is called as a face, b face and c face, wherein: a face is formed by b axle and c-axis and perpendicular to a axle; B face is formed by a axle and c-axis and perpendicular to b axle; And c face is formed by a axle and b axle and perpendicular to c-axis.Object in order to describe: a face of reference comprises a face and arbitrary face parallel with it; The b face of reference comprises b face and arbitrary face parallel with it; And the c face of reference comprises c face and arbitrary face parallel with it.And about crystal structure described here each " face " or " surface ", the face being parallel to a face is sometimes referred to as " b-c " face; The face being parallel to b face is sometimes referred to as " a-c " face; And the face being parallel to c face is sometimes referred to as " a-b " face.
Fig. 1 shows from the first visual angle, namely perpendicular to crystal structure 100 " a-b " face and be parallel to the crystal structure 100 of the exemplary ELR material of the view of its c-axis.Fig. 2 shows from the second visual angle, namely perpendicular to crystal structure 100 " b-c " face and be parallel to the crystal structure 100 of the view of its a axle.In order to the object of this description, the exemplary ELR material shown in Fig. 1 and Fig. 2 represents various ELR material usually.In realizations more of the present invention, exemplary ELR material can be the representative of the superconductor race being called mixed valence cupric oxide perovskite.The material of mixed valence cupric oxide perovskite comprises, but be not limited to, LaBaCuOx, LSCO are (such as, La2-xSrxCuO4 etc.), YBCO (such as, YBa2Cu3O7 etc.), BSCCO (such as, Bi2Sr2Ca2Cu3O10 etc.), TBCCO (such as, Tl2Ba2Ca2Cu3O10 or TlmBa2Can-1CunO2n+m+2+8), HgBa2Ca2Cu3Ox and other mixed valence cupric oxide perovskite material.As understood, other mixed valence cupric oxide perovskite material can include, but not limited to cationic various replacement.As also understood, be aforementionedly called the general class material that mixed valence cupric oxide perovskite material can refer to wherein exist many different ratio.In realizations more of the present invention, exemplary ELR material can comprise the HTS material outside mixed valence cupric oxide perovskite material (" non-perovskite material ") race.Non-perovskite material like this can include, but not limited to iron pnictide, magnesium diboride (MgB2) and other non-perovskites.In realizations more of the present invention, exemplary ELR material can be other superconductor.
As understood, many ELR materials will have the structure (although not necessarily identical) similar with crystal structure 100, and this crystal structure 100 has different atoms, the combination of atom and/or lattice and arranges.As shown in Figure 2, crystal structure 100 is depicted as the complete structure cell of two with exemplary ELR material, and one of them structure cell is on datum line 110, and a structure cell is below datum line 110.Fig. 4 shows the single structure cell 400 of exemplary ELR material.
Generally speaking, and as will be appreciated, the structure cell 400 of exemplary ELR material comprises in six " faces ": two " a-b " faces being parallel to c face; Be parallel to two " a-c " faces in b face; With two " b-c " faces (such as, see Figure 13) being parallel to a face.As also understood, " surface " of the ELR material on macroeconomic significance can comprise multiple structure cell 400 (such as, hundreds of, several thousand or more).That mentions in this manual is parallel to certain surface (such as, a face, b face or c face) " surface " or " face " of ELR material, represent that main (overwhelming majority) forms this surface by the face of the structure cell 400 being arranged essentially parallel to this certain surface.In addition, mention that the face that is parallel to except a face, b face or c face (such as in this manual, ab face etc. as described below) " surface " or " face " of ELR material, represent and form this surface by some flour mixed with adulterants of structure cell 400, its described flour mixed with adulterants on total macroeconomic significance forms the surface being arranged essentially parallel to these other faces.
Research shows, some ELR materials demonstrate the dependence of the anisotropy (that is, directivity) of resistance phenomenon.In other words, the direction about crystal structure 100 is depended at the resistance at given temperature and current density place.Such as, in their ELR state, at extremely low resistance place, on the direction of a axle and/or on the direction of b axle, these materials compared by some ELR materials can carry significantly more electric current on the direction of c-axis.As understood, various ELR material list will reveal the anisotropy of various performance phenomenon, be included in be different from, except or as those directions above-mentioned combination direction on resistance phenomenon.In order to the object of this explanation, the material being tending towards showing in a first direction resistance phenomenon (and similar language) mentioned shows, the phenomenon that this material support is so in a first direction; And the material being tending towards not showing in a second direction resistance phenomenon (with similar language) mentioned shows, this material does not support that such phenomenon is supported in the mode reduced in such phenomenon or the direction relative to other in a second direction.
With reference to figure 2, the routine understanding of known ELR material fails to understand the hole 210 formed by multiple holes atom 250 in crystal structure 100 so far, and this is the reason forming resistance phenomenon.(for example, see Fig. 4, wherein in the single structure cell 400 described, hole is not clearly.) in some sense, hole atom 250 can be counted as around hole 210, form discrete atom " border " or " circumference ".In realizations more of the present invention, and as shown in Figure 2, hole 210 appears between the Part I 220 of crystal structure 100 and Part II 230, but in realizations more of the present invention, hole 210 can appear in other parts of other crystal structures various.Based on being described as by atom simply " spheroid ", figure 2 illustrates hole 210; To understand, inter alia, the electronics of such hole and the various atoms (comprising hole atom 250) in crystal structure 100 and their relevant electron densities (not illustrating in addition) relevant and be shaped by them.
According to various aspects of the present invention, hole 210 contributes to transferring charge by crystal structure 100, and when hole 210 contributes to transferring charge by crystal structure 100, ELR material is operated in its ELR state.In order to the object of this explanation, " transmission ", " transmission " and/or " contributing to transmitting " (together with they respective forms), are often referred to " conduction ", " in conduction " and/or " contributing to conduction " and their respective forms; " conveying ", " conveying " and/or " contributing to carrying " and their respective forms; " guiding ", " guiding " and/or " contributing to guiding " and their respective forms; And/or " carrying ", " carrying " and/or " contributing to carrying " and their respective forms.In order to the object of this explanation, electric charge can comprise positive charge or negative electrical charge, and/or this electric charge to or other grouping; And such electric charge can be conveyed through crystal structure 100 with the form of one or more particle or with the form of one or more ripple or ripple bag.
In realizations more of the present invention, transferring charge can be the mode being similar to waveguide by crystal structure 100.In realizations more of the present invention, hole 210 can be transmit relevant waveguide with transmission charge by crystal structure 100.Usually waveguide and work thereof is understood very well.Particularly, the wall around the inside of this waveguide can corresponding to the border of the hole atom 250 around hole 210 or circumference.An aspect relevant to the work of waveguide is its cross section.At atomic level, hole 210 and/or its cross section can change along with the variations in temperature of ELR material substantially.Such as, in realizations more of the present invention, the variations in temperature of ELR material can cause the change in hole 210, and this can cause ELR material to change between its ELR state and its non-ELR state successively.Such as, along with the temperature of ELR material increases, hole 210 can limit or hinder transferring charge to pass through crystal structure 100 and corresponding ELR material can from its ELR State Transferring to its non-ELR state.Similarly, such as, along with the temperature of ELR material reduces, hole 210 can contribute to (with limiting or hindering relative), and transferring charge is by crystal structure 100 and ELR material can from its non-ELR State Transferring to its ELR state accordingly.
Hole (hole 210 as in Fig. 2) is present in various ELR material, such as, but not limited to, shown in Fig. 3 and Fig. 5-9 etc. and various ELR material described below.As directed, for the crystal structure of some or all ELR materials, such hole is intrinsic.As understood, according to such description, the various forms in hole 210, shape, size and number are present in ELR material, and it depends on the accurate configuration of the crystal structure in the crystal structure of ELR material, atom composition and the layout of atom.
The existence in the hole 210 that the direction of each axle is extended by the crystal structure 100 of various ELR material and not existing, consistent with the anisotropic dependence revealed by such ELR material list.Such as, be shown in ELR material in Fig. 3, Figure 11 and Figure 12 360 and correspond to YBCO-123, it shows resistance phenomenon on the direction of a axle and b-axle, but on the direction of c-axis, trend towards not having apparent resistance phenomenon.Consistent with the anisotropic dependence of the resistance phenomenon shown by YBCO-123, Fig. 3 shows hole 310 on the direction of a axle and extends through crystal structure 300; Figure 12 shows hole 310 and hole 1210 on the direction of b axle and extends through crystal structure 300; And Figure 11 shows and does not have suitable hole to extend through crystal structure 300 on the direction of c-axis.
Hole 210 and/or its cross section can depend on the various atomic propertieses of hole atom 250 and/or " non-hole atom " (that is, the atom in crystal structure 100 except hole atom 250).Such atomic properties includes, but are not limited to bond angle, the interatomic bond angle of hole atom and non-hole and/or isotope quantity between atom size, atomic weight, electron amount, electronic structure, the quantity of key, the type of key, different keys, multiple bond, bond distance, bond strength, hole atom.Selecting hole atom 250 and non-hole atom can be come based on its corresponding atomic properties, with in its size, shape, hardness and the vibration mode relevant to crystal structure and/or atom wherein (in amplitude, frequency and direction) optimize hole 210.
According to various realization of the present invention, the change of the physical structure in hole 210, comprises to the shape of its cross section and/or the change of size and/or to the shape of hole atom 205 or the change of size, can affect resistance phenomenon.Such as, along with the temperature of crystal structure 100 raises, due to the vibration of various atoms in crystal structure 100 and the change of energy state, or atom in crystal structure 100 occupying wherein, the cross section in hole 210 can change.The physical bend of crystal structure 100, extension or compression also can affect the position of each atom in crystal structure 100 and therefore affect the cross section in hole 210.The magnetic field be applied on crystal structure 100 also can affect the position of each atom in crystal structure 100 and therefore affect the cross section in hole 210.
Phonon corresponds to the various vibration modes in crystal structure 100.Phonon in crystal structure 100 can with the charge interaction being transmitted through crystal structure 100.More specifically, the phonon in crystal structure 100 can cause the atom in crystal structure 100 (such as, hole atom 250, non-hole atom etc.) and the charge interaction being transmitted through crystal structure 100.Higher temperature causes higher phonon amplitude, and can cause increasing the interaction between phonon, atom in crystal structure 100 and such electric charge.Various realization of the present invention can minimize, reduces or otherwise be modified in this interaction between the atom in phonon, crystal structure 100 and the such electric charge in crystal structure 100.
Fig. 3 shows the crystal structure 300 of the exemplary ELR material 360 from the second visual angle.Exemplary ELR material 360 is commonly referred to as the superconductor of " YBCO ", and it has the transition temperature of about 90K in some proportioning.Particularly, the exemplary ELR material 360 shown in Fig. 3 is YBCO-123.The crystal structure 300 of exemplary ELR material 360 comprises the various atoms of yttrium (" Y "), barium (" Ba "), copper (" Cu ") and oxygen (" O ").As shown in Figure 3, in crystal structure 300, passing hole atom 350 (i.e. the atom of yttrium, copper and oxygen) forms hole 310.The distance of the cross section between the yttrium hole atom in hole 310 is about 0.389nm, and the distance of the cross section between the oxygen hole atom in hole 310 is about 0.285nm, and the distance of cross section between copper hole atom in hole 310 is about 0.339nm.
Figure 12 shows the crystal structure 300 of the exemplary ELR material 360 from the 3rd visual angle.With above about Fig. 3 describe similar, exemplary ELR material 360 is YBCO-123, and in crystal structure 300, passing hole atom 350 (i.e. the atom of yttrium, copper and oxygen) forms hole 310.In this orientation, the distance of the cross section between the yttrium hole atom in hole 310 is about 0.382nm, the distance of the cross section between the oxygen hole atom in hole 310 is about 0.288nm, and the distance of cross section between copper hole atom in hole 310 is about 0.339nm.In this orientation, except hole 310, the crystal structure 300 of exemplary ELR material 360 also comprises hole 1210.Hole 1210 appears on the direction of b axle of crystal structure 300.More specifically, hole 1210 appears between the single structure cell of the exemplary ELR material 360 in crystal structure 300.In crystal structure 300, passing hole atom 1250 (i.e. the atom of barium, copper and oxygen) forms hole 1210.The distance of the cross section between the barium hole atom 1250 in hole 1210 is about 0.430nm, the distance of the cross section between the oxygen hole atom 1250 in hole 1210 is about 0.382nm, and the distance of cross section between copper hole atom 1250 in hole 1210 is about 0.382nm.In realizations more of the present invention, hole 1210 is to work about the similar mode described by hole 310 with at this.In order to the object of this explanation, based on the component of their respective hole atoms 350,1250, the hole 310 in YBCO can be called as in " yttrium hole ", and the hole 1210 in YBCO can be called as in " barium hole ".
Fig. 5 shows the crystal structure 500 of the exemplary ELR material 560 from the second view.Exemplary ELR material 560 is commonly referred to as the HTS material of " HgBa2CuO4 ", and it has the transition temperature of about 94K.The crystal structure 500 of exemplary ELR material 560 comprises the various atoms of mercury (" Hg "), barium (" Ba "), copper (" Cu ") and oxygen (" O ").As shown in Figure 5, in crystal structure 500, form hole 510 by the hole atom comprising the atom of barium, copper and oxygen.
Fig. 6 shows the crystal structure 600 of the exemplary ELR material 660 from the second view.Exemplary ELR material 660 is commonly referred to as the HTS material of " Tl2Ca2Ba2Cu3O10 ", and it has the transition temperature of about 128K.The crystal structure 600 of exemplary ELR material 660 comprises the various atoms of thallium (" Tl "), calcium (" Ca "), barium (" Ba "), copper (" Cu ") and oxygen (" O ").As shown in Figure 6, in crystal structure 600, form hole 610 by the hole atom comprising the atom of calcium, barium, copper and oxygen.And as shown in Figure 6, in crystal structure 600, also secondary aperture 620 can be formed by the secondary aperture atom comprising the atom of calcium, copper and oxygen.Secondary aperture 620 can work in the mode similar with hole 610.
Fig. 7 shows the crystal structure 700 of the exemplary ELR material 760 from the second view.Exemplary ELR material 760 is commonly referred to as the HTS material of " La2CuO4 ", and it has the transition temperature of about 39K.The crystal structure 700 of exemplary ELR material 760 comprises the various atoms of lanthanum (" La "), copper (" Cu ") and oxygen (" O ").As shown in Figure 7, in crystal structure 700, form hole 710 by the hole atom comprising the atom of lanthanum and oxygen.
Fig. 8 shows the crystal structure 800 of the exemplary ELR material 860 from the second view.Exemplary ELR material 860 is commonly referred to as the HTS material of " As2Ba0.34Fe2K0.66 ", and it has the transition temperature of about 38K.Exemplary ELR material 860 is representatives of the ELR material race sometimes referred to as " iron pnictide ".The crystal structure 800 of exemplary ELR material 860 comprises the various atoms of arsenic (" As "), barium (" Ba "), iron (" Fe ") and potassium (" K ").As shown in Figure 8, in crystal structure 800, form hole 810 by the hole atom comprising the atom of potassium and arsenic.
Fig. 9 shows the crystal structure 900 of the exemplary ELR material 960 from the second view.Exemplary ELR material 960 is commonly referred to as the HTS material of " MgB2 ", and it has the transition temperature of about 39K.The crystal structure 900 of exemplary ELR material 960 comprises the various atoms of magnesium (" Mg ") and boron (" B ").As shown in Figure 9, in crystal structure 900, form hole 910 by the hole atom comprising the atom of magnesium and boron.
Aforementioned exemplary ELR material shown in Fig. 3, Fig. 5-9 and Figure 12, eachly shows to there is various hole in these materials.Other ELR materials various have similar hole.Once owing to resistance phenomenon, hole and corresponding crystal structure thereof just can be utilized to improve the operating characteristic of existing ELR material, prepare new ELR material with the ELR material be improved from existing ELR material and/or design.For convenience, after this ELR material 360 (and adjoint characteristic sum structure) generally refers to various ELR material, comprise, but be not limited to, ELR material 560 shown in accompanying drawing, ELR material 660, ELR material 760 and other ELR materials, and be not only illustrate with reference to figure 3 and the ELR material described.
According to various realization of the present invention, the crystal structure of various known ELR material can be modified, and makes the ELR material work of modification have the operating characteristic exceeding improvement that is known and/or unmodified ELR material.In realizations more of the present invention, as understood, such as, this also can realize to make the atom of material cross hole 210 by forming one or more key between Part I 220 and Part II 230 by making the layers of material on crystal structure 100.This particular modification making the layers of material on crystal structure 100 is described in more detail together with various experimental results below.
Figure 10 shows the crystal structure 1010 of various realization according to the present invention from the modification of the modification ELR material 1060 of the second view.Figure 11 shows the crystal structure 1010 of various realization according to the present invention from the modification of the modification ELR material 1060 of the first view.By ELR material 360 (such as, as shown in Fig. 3 He other places) modification to form modification ELR material 1060.Material modified 1020 form the key with the atom of the crystal structure 300 (Fig. 3's) of ELR material 360, to form the crystal structure 1010 of the modification of modification ELR material 1060 as shown in figure 11.As shown in the figure, the gap between material modified 1020 bridge joint Part I 320 and Part II 330, thus at least change the vibration characteristics of the crystal structure 1010 of modification, the vibration characteristics particularly in the region in hole 310.When doing like this, material modified 1020 retaining holes 310 at higher temperature place.Therefore, more of the present invention during realize, select material modified 1020 particularly to be suitable for suitable atom in crystal structure 300 and bonded thereto.
More of the present invention during realize, and as shown in Figure 10, material modified 1020 faces being bonded to the crystal structure 300 being parallel to b face (such as " a-c " face).Be bonded in such realization in " a-c " face material modified 1020, maintain and to extend on the direction of a axle and there is the hole 310 of the cross section being positioned at a face.In such an implementation, electric charge carrier is at upper reaches, the direction via hole 310 of a axle.
More of the present invention during realize, material modified 1020 faces being bonded to the crystal structure 300 being parallel to a face (such as, " b-c " face).Be bonded in such realization in " b-c " face material modified 1020, maintain and to extend on the direction of b axle and there is the hole 310 of the cross section being positioned at b face.In such an implementation, electric charge carrier is at upper reaches, the direction via hole 310 of b axle.
Various realization of the present invention comprises the particular surface (that is, making the particular surface modification of ELR material 360 with material modified 1020) with material modified 1020 layer ELR materials 360.As recognized from this specification, mentioning " modified surface " of ELR material 360, finally comprising face (and in some cases, being more than one face) modification of the one or more structure cells 400 making ELR material 360.In other words, material modified 1020 the atom in the structure cell 400 of ELR material 360 is in fact bonded to.
Such as, the surface modification of the ELR material 360 being parallel to a face is comprised make " b-c " face modification of structure cell 400.Similarly, the surface modification of the ELR material 360 being parallel to b face is comprised make " a-c " face modification of structure cell 400.More of the present invention during realize, material modified 1020 surfaces being bonded to ELR material 360, this surface is basically parallel to the arbitrary face parallel with c-axis.For illustrative purposes, the face being parallel to c-axis is commonly referred to as ab face, and as understood, comprises a face and b face.As understood, be mixed to form the surface of the ELR material 360 being parallel to ab face by certain of " a-c " face of structure cell 400 and " b-c " face.Be bonded in such realization on the surface being parallel to ab face material modified 1020, maintain the hole 310 extended on a direction of principal axis and the hole 310 extended on b direction of principal axis.
In realizations more of the present invention, material modified 1020 can be electric conducting material.More of the present invention during realize, material modified 1020 can be material (that is, easily and the material of oxygen bonding) (" the oxygen bonding material ") with high oxygen affinity.In realizations more of the present invention, material modified 1020 can be electric conducting material (" oxygen bonding electric conducting material ") that is easy and oxygen bonding.Such oxygen bonding electric conducting material can include, but are not limited to: chromium, copper, bismuth, cobalt, vanadium and titanium.Such oxygen bonding electric conducting material can also include, but are not limited to: rhodium or beryllium.Other are material modified can comprise gallium or selenium.Other are material modified can comprise silver.The material modified of other can also be used.
In realizations more of the present invention, the oxide of material modified 1020 can be formed during the various operations relevant to the modification ELR material 360 with material modified 1020.Therefore, in realizations more of the present invention, material modified 1020 can comprise material modified 1020 of substantially pure form and/or the various oxides of material modified 1020.In other words, in realizations more of the present invention, the various oxides with material modified 1020 and/or material modified 1020 make ELR material 360 modification.By way of example, and unrestricted, and in realizations more of the present invention, material modified 1020 can comprise chromium and/or chromium oxide (CrxOy).
More of the present invention during realize, ELR material 360 can be YBCO and material modified 1020 can be oxygen bonding electric conducting material.More of the present invention during realize, ELR material 360 can be YBCO and material modified 1020 can be selected from group below, includes but not limited to: chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium or beryllium.More of the present invention during realize, ELR material 360 can be YBCO and material modified 1020 can be selected from the group be made up of chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium and beryllium.More of the present invention during realize, ELR material 360 can be YBCO and material modified 1020 can be other material modified.
In realizations more of the present invention, other combinations various of mixed valence cupric oxide perovskite material and oxygen bonding electric conducting material can be used.Such as, in realizations more of the present invention, ELR material 360 is corresponding to the mixed valence cupric oxide perovskite material being commonly referred to " BSCCO ".BSCCO comprises the various atoms of bismuth (" Bi "), strontium (" Sr "), calcium (" Ca "), copper (" Cu ") and oxygen (" O ").BSCCO itself has the transition temperature of about 100K.More of the present invention during realize, ELR material 360 can be BSCCO and material modified 1020 can be oxygen bonding electric conducting material.More of the present invention during realize, ELR material 360 can be BSCCO and material modified 1020 can be selected from group below, includes but not limited to: chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium or beryllium.More of the present invention during realize, ELR material 360 can be BSCCO and material modified 1020 can be selected from the group be made up of chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium and beryllium.More of the present invention during realize, ELR material 360 can be BSCCO and material modified 1020 can be other material modified.
In realizations more of the present invention, other ELR materials and material modified various combinations can be used.Such as, in realizations more of the present invention, ELR material 360 corresponds to iron pnictide material.Iron pnictide itself has the transition temperature of scope from about 25-60K.More of the present invention during realize, ELR material 360 can be iron pnictide and material modified 1020 can be oxygen bonding electric conducting material.More of the present invention during realize, ELR material 360 can be iron pnictide and material modified 1020 can be selected from group below, includes but not limited to: chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium or beryllium.More of the present invention during realize, ELR material 360 can be iron pnictide and material modified 1020 can be selected from the group be made up of chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium and beryllium.More of the present invention during realize, ELR material 360 can be iron pnictide and material modified 1020 can be other material modified.
In realizations more of the present invention, other ELR materials and material modified various combinations can be used.Such as, in realizations more of the present invention, ELR material 360 can be magnesium diboride (" MgB2 ").Magnesium diboride itself has the transition temperature of about 39K.More of the present invention during realize, ELR material 360 can be magnesium diboride and material modified 1020 can be oxygen bonding electric conducting material.More of the present invention during realize, ELR material 360 can be magnesium diboride and material modified 1020 can be selected from group below, includes but not limited to: chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium or beryllium.More of the present invention during realize, ELR material 360 can be magnesium diboride and material modified 1020 can be selected from the group be made up of chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium and beryllium.More of the present invention during realize, ELR material 360 can be magnesium diboride and material modified 1020 can be other material modified.
In realizations more of the present invention, as understood, using for a kind of component layer being pressed onto the various technology on another kind of composition, can be laminated to material modified 1020 on the sample of ELR material 360.Such as, such lamination comprises, but be not limited to, pulsed laser deposition, evaporation (comprising coevaporation, electron beam evaporation and activation response evaporation), sputtering (comprising magnetron sputtering, ion beam sputtering and ion assisted sputtering), cathodic arc deposition, CVD, organic metal CVD, plasma enhanced CVD, molecular beam epitaxy, sol-gel technology, liquid phase epitaxy and/or other laminations.In realizations more of the present invention, using for a kind of component layer being pressed onto the various technology on another composition, ELR material 360 can be laminated on the sample of material modified 1020.In realizations more of the present invention, the individual unit layer of material modified 1020 (that is, can be had the individual unit layer of material modified 1020 (thickness of atom or molecule) being substantially equal to material modified 1020 to be laminated on the sample of ELR material 360.In realizations more of the present invention, can by material modified individual unit layer (namely, there is the material modified layer of the thickness being substantially equal to material modified individual unit (such as, atom, molecule, crystal or other unit)) be laminated on the sample of ELR material.In realizations more of the present invention, ELR material layer can be pressed onto on material modified individual unit layer.In realizations more of the present invention, material modified two or more elementary layers can be laminated on ELR material.In realizations more of the present invention, ELR material layer can be pressed onto on material modified two or more elementary layers.
In realizations more of the present invention, at the temperature place of the boiling point approximately or higher than nitrogen, hole 310 remains in modification ELR material 1060 by the modification ELR material 360 with material modified 1020.In realizations more of the present invention, in the temperature place retaining hole 310 of the boiling point approximately or higher than carbon dioxide.In realizations more of the present invention, in the temperature place retaining hole 310 of the boiling point approximately or higher than ammonia.In realizations more of the present invention, in the temperature place retaining hole 310 of the boiling point approximately or higher than the various preparations of freon.In realizations more of the present invention, in the temperature place retaining hole 310 of the fusing point approximately or higher than water.More of the present invention during realize, in the temperature place retaining hole 310 of the fusing point approximately or higher than the solution of water and anti-icing fluid.More of the present invention during realize, approximately or higher than the temperature place retaining hole 310 of room temperature (such as 21 DEG C).More of the present invention during realize, approximately or higher than the temperature place retaining hole 310:150K of one of one group of temperature below being selected from, 160K, 170K, 180K, 190K, 200K, 210K, 220K, 230K, 240K, 250K, 260K, 270K, 280K, 290K, 300K, 310K.In realizations more of the present invention, retaining hole 310 in the temperature range of 150K to 315K.
Figure 14 A-14G shows the test result 1400 obtained as mentioned above.Test result 1400 comprises the curve chart of resistance as the function (in K) of temperature of modification ELR material 1060.More specifically, test result 1400 corresponds to modification ELR material 1060, wherein material modified 1020 corresponds to chromium and wherein ELR material 360 corresponds to YBCO.Figure 14 A is included in complete temperature range, and namely 84K to 286K measures the test result 1400 of the resistance of modification ELR material 1060.In order to provide further details, test result 1400 being divided into different temperature ranges and being illustrated.Particularly, Figure 14 B shows those test results 1400 in the temperature range from 240K to 280K; Figure 14 C shows those test results 1400 in the temperature range from 210K to 250K; Figure 14 D shows those test results 1400 in the temperature range from 180K to 220K; Figure 14 E shows those test results 1400 in the temperature range from 150K to 190K; Figure 14 F shows those test results 1400 in the temperature range from 120K to 160K; And Figure 14 G shows those test results 1400 in the temperature range from 84.5K to 124.5K.
Test result 1400 shows, the various piece of modification ELR material 1060 is operated in relative in the ELR state under the higher temperature of ELR material 360.Obtain six sample analysis test runs.For each sample analysis test run, modification ELR material 1060 is cooled to 83K from about 286K lentamente.During cooling, in order to reduce the impact of any DC skew and/or thermocouple effect, current source applies the electric current of+60nA and-60nA with the configuration of Delta pattern.In the time interval of rule, measured the voltage at modification ELR material 1060 two ends by voltmeter.To each sample analysis test run, 512 point quick Fourier conversion (" FFT ") filtration time sequence voltage are used to measure.Eliminate 44 the almost minimum frequencies from FFT from these data, and the data of this filtration are returned to time domain.Then the filtering data from each sample analysis test run combines, to produce test result 1400.More specifically, to be called the mode of " classification " (" binning "), all resistivity measurements from six sample analysis test runs are organized into a series of temperature range (such as, 80K-80.25K, 80.25K to 80.50K, 80.5K to 80.75K etc.).Then the resistivity measurements in each temperature range together by average with the average resistance measured value provided for each temperature range.These average resistance measured values form test result 1400.
Test result 1400 comprises the various discrete step 1410 in resistance and temperature profile, and the relative of the resistance of each expression in relative narrow temperature scope of these discrete step 1410 changes fast.These discrete step 1410 each in, start transmission charge until the charge transport ability of this part in the separate section of respective temperature place modification ELR material 1060.In very little scope, the surface of the ELR material 360 be modified is not exclusively level and smooth, and the hole 310 therefore exposed in the surface of ELR material 360 can not extend whole width across the sample of modification ELR material 1060 or length usually.Therefore, in realizations more of the present invention, the whole surface of material modified 1020 covering ELR materials 360, and the conductor carrying electric charge between each hole 310 can be used as.
Before discussing test result 1400 further in detail, the various characteristics of ELR material 360 and material modified 1020 are discussed.Usually the curve chart of the resistance versus temperature (" R-T ") of these materials is separately well-known.The respective R-T curve chart of these materials is not thought and is comprised the feature similar with the discrete step 1410 found in test result 1400.In fact, the unmodified sample of ELR material 360 and the sample of material modified 1020 is tested separately similar with usually identical test with under measuring configuration.In each case, the R-T curve chart of the unmodified sample of ELR material 360 and material modified R-T curve chart do not comprise any feature being similar to discrete step 1410 individually.Therefore, according to various realization of the present invention, discrete step 1410 is results of the modification ELR material 360 with material modified 1020, with the temperature place retaining hole 310 increased, thus at the temperature place of such increase, allow material modified 1060 to remain in ELR state.
At each discrete step 1410 place, the various holes 310 in modification ELR material 1060 start transmission charge until the charge transport ability in each hole 310.As measured by voltmeter, each transferring charge hole 310 is shown as short circuit, makes the obvious voltage drop of the sample across modification ELR material 1060 a small amount of.When additional hole 310 starts transmission charge until (namely the sample temperature of modification ELR material 1060 reaches the transition temperature of ELR material 360, the transition temperature of unmodified ELR material, 90K is approximately when YBCO) time, obvious voltage continues to decline.
Test result 1400 shows, certain some holes 310 in modification ELR material 1060 is at about 97K, 100K, 103K, 113K, 126K, 140K, 146K, 179K, 183.5K, 200.5K, 237.5K and 250K place transmission charge.As understood, other temperature places in whole temperature range, certain some holes 310 in modification ELR material 1060 can transmission charge.
Test result 1400 is included in other relatively fast changes various of the resistance in relatively narrow temperature range, and is not identified as discrete step 1410 separately.Some in these other change can correspond to from the artifact of the data processing technique on the measured value obtained for (such as, FFT, filtration etc.) during test run.Owing to affecting the resonance frequency of the modified crystal structures 1010 in hole 310 at various temperatures, some in these other change can correspond to the change of resistance.Some in these other change can correspond to additional discrete step 1410.In addition, the resistance variations in 270-274K temperature range is probably relevant with the water be present in modification ELR material 1060, and wherein during the preparation of the sample of modification ELR material 1060, some water may be introduced into.
Except discrete step 1410, the R-T curve chart that test result 1400 is different from ELR material 360 is the temperature place of the transition temperature higher than ELR material 360, and material modified 1020 conductions are good, and ELR material 360 can not do usually like this.
Figure 15 shows the additional test result 1500 of sample for ELR material 360 and material modified 1020.More specifically, for test result 1500, material modified 1020 correspond to chromium, and ELR material 360 corresponds to YBCO.For test result 1500, various technology discussed above is used to prepare the sample of ELR material 360, to expose the face of the crystal structure 300 being parallel to a face or b face.Adopt lock-in amplifier and K6221 current source to collect test result 1500, wherein the electric current of the 10nA of 24.0Hz is applied on modification ELR material 1060.Test result 1500 comprises the curve chart of resistance as temperature funtion (in K) of modification ELR material 1060.Figure 15 is included in the test result 1500 in the whole temperature range of the resistance measuring modification ELR material 1060, this temperature range and 80K to 275K.Test result 1500 shows, the various piece of modification ELR material 1060 is operated in the ELR state relative to the higher temperature place of ELR material 360.Five sample analysis test runs have been carried out with the sample of modification ELR material 1060.For each sample analysis test run, the sample of modification ELR material 1060 is slowly warmed up to 275K from 80K.When by heating, with the voltage of the time interval measurement of rule across the sample of modification ELR material 1060, and based on this resistance of source Current calculation.For each sample analysis test run, use the resistivity measurements of 1024 FFT filtration time sequences.Eliminate 15 the almost minimum frequencies from FFT from these data, and the resistivity measurements filtered turns back to time domain.Then above-mentioned classification process is utilized to make the resistivity measurements from the filtration of each sample analysis test run combine to obtain test result 1500.Then, the resistivity measurements in each temperature range together by average with the average resistance measured value provided for each temperature range.These average resistance measured values form test result 1500.
Be similar to the discrete step 1410 about Figure 14 A-14G discussed above, test result 1500 is included in the various discrete step 1510 in the curve chart of resistance versus temperature, relatively the changing fast in the temperature range of relative narrower of each expression resistance in such discrete step 1510.Each place in these discrete step 1510, at respective temperature, the discrete portions transmission charge of modification ELR material 1060 is until the charge transport ability of this part.
Test result 1500 shows, at about 120K, 145K, 175K, 225K and 250K place, and certain some holes 310 transmission charge in modification ELR material 1060.As understood, can other temperature places in whole temperature range, certain some holes 310 transmission charge in modification ELR material 1060.
Figure 16-20 shows the additional test result for ELR material 360 and the various sample of material modified 1020.For these additional test result, various technology discussed above is used to prepare the sample of ELR material 360, to expose the face of the crystal structure 300 of some combinations being arranged essentially parallel to a face or b face or a face or b face, and make material modified being laminated on these faces exposed.The each of these modified samples is cooled to 80K lentamente from about 300K.When by heating, by modified sample as described below, current source applies electric current with δ pattern configurations.In the time interval of rule, measure the voltage across modified sample.For each sample analysis test run, use FFT by removing almost minimum frequency, filtration time sequence voltage measured value in a frequency domain, and the measured value of filtration is turned back to time domain.For each data group, the frequency number of maintenance is normally different.Then the data after the filtration from each test run to be graded together and on average, to produce the test result shown in Figure 16-21.
Figure 16 shows the resistance that comprises modification ELR material 1060 test result 1600 as the curve chart of the function of temperature (in K).For test result 1600, material modified 1020 correspond to vanadium, and ELR material 360 corresponds to YBCO.Use 20nA current source to obtain test result 1600 through 11 test runs, perform the FFT of 1024, and eliminate the information from 12 almost minimum frequencies.Test result 1600 shows, the various piece of modification ELR material 1060 is operated in the ELR state relative to the higher temperature place of ELR material 360.Discuss about Figure 14 A-14G above being similar to those, test result 1600 is included in the various discrete step 1610 in the curve chart of resistance versus temperature.Test result 1600 shows, at about 267K, 257K, 243K, 232K and 219K place, and certain some holes 310 transmission charge in modification ELR material 1060.Certain some holes 310 in modification ELR material 1060 can at other temperature place transmission charges.
Figure 17 shows the resistance that comprises modification ELR material 1060 test result 1700 as the curve chart of the function of temperature (in K).For test result 1700, material modified 1020 corresponding bismuths, and ELR material 360 corresponds to YBCO.Utilize 400nA current source to obtain test result 1700 through 5 test runs, perform the FFT of 1024, and eliminate the information from 12 almost minimum frequencies.Test result 1700 shows, the various piece of modification ELR material 1060 is operated in the ELR state relative to the higher temperature place of ELR material 360.Discuss about Figure 14 A-14G above being similar to those, test result 1700 is included in the various discrete step 1710 in the curve chart of resistance versus temperature.Test result 1700 shows, at about 262K, 235K, 200K, 172K and 141K place, and certain some holes 310 transmission charge in modification ELR material 1060.Certain some holes 310 in modification ELR material 1060 can at other temperature place transmission charges.
Figure 18 shows the resistance that comprises modification ELR material 1060 test result 1800 as the curve chart of the function of temperature (in K).For test result 1800, material modified 1020 correspond to copper, and ELR material 360 corresponds to YBCO.Use the current source of 200nA to obtain test result 1800 through 6 test runs, perform the FFT of 1024, and eliminate the information from 12 almost minimum frequencies.Test result 1800 shows, the various piece of modification ELR material 1060 is operated in the ELR state relative to the higher temperature place of ELR material 360.Discuss about Figure 14 A-14G above being similar to those, test result 1800 is included in the various discrete step 1810 in the curve chart of resistance versus temperature.Test result 1800 shows, at about 268K, 256K, 247K, 235K and 223K place, and certain some holes 310 transmission charge in modification ELR material 1060.Certain some holes 310 in modification ELR material 1060 can at other temperature place transmission charges.
Figure 19 shows the resistance that comprises modification ELR material 1060 test result 1900 as the curve chart of the function of temperature (in K).For test result 1900, material modified 1020 correspond to cobalt, and ELR material 360 corresponds to YBCO.Use 400nA current source to obtain test result 1900 through 11 test runs, perform the FFT of 1024, and eliminate the information from 12 almost minimum frequencies.Test result 1900 shows, the various piece of modification ELR material 1060 is operated in the ELR state relative to the higher temperature place of ELR material 360.Discuss about Figure 14 A-14G above being similar to those, test result 1900 is included in the various discrete step 1910 in the curve chart of resistance versus temperature.Test result 1900 shows, at about 265K, 236K, 205K, 174K and 143K place, and certain some holes 310 transmission charge in modification ELR material 1060.Certain some holes 310 in modification ELR material 1060 can at other temperature place transmission charges.
Figure 20 shows the resistance that comprises modification ELR material 1060 test result 2000 as the curve chart of the function of temperature (in K).For test result 2000, material modified 1020 correspond to titanium, and ELR material 360 corresponds to YBCO.Use the current source of 100nA to obtain test result 2000 through 25 test runs, perform the FFT of 512, and eliminate the information from 11 almost minimum frequencies.Test result 2000 shows, the various piece of modification ELR material 1060 is operated in the ELR state relative to the higher temperature place of ELR material 360.Discuss about Figure 14 A-14G above being similar to those, test result 2000 is included in the various discrete step 2010 in the curve chart of resistance versus temperature.Test result 2000 shows, at about 266K, 242K and 217K place, and certain some holes 310 transmission charge in modification ELR material 1060.Certain some holes 310 in modification ELR material 1060 can at other temperature place transmission charges.
Figure 21 A-21B shows the resistance that comprises modification ELR material 1060 test result 2100 as the curve chart of the function of temperature (in K).For test result 2100, material modified 1020 correspond to chromium, and the corresponding BSSCO of ELR material 360.Figure 21 A comprises the test result 2100 in whole temperature range, at this whole temperature range, i.e. 80K to 270K, measures the resistance of modification ELR material 1060.In order to provide further details, as illustrated in fig. 21b, in the temperature range of 150K-250K, test result 2100 is amplified.Test result 2100 is collected in those the mode discussed about Figure 16-20 above being similar to.Especially, the current source of 300nA is used to obtain test result 2100 through 25 test runs.Use 64 sides point (sidepoints) and 4 rank multinomials, make data from these test runs by Savitzy-Golay smoothing.Test result 2100 shows, the various piece of modification ELR material 1060 is operated in the ELR state relative to the higher temperature place of ELR material 360 (being BSSCO) herein.Discuss about Figure 14 A-14G above being similar to those, test result 2100 is included in the various discrete step 2110 in the curve chart of resistance versus temperature.Test result 2100 shows, at about 184K and 214K place, and certain the some holes transmission charge in modification ELR material 1060.Certain some holes 310 in modification ELR material 1060 can at other temperature place transmission charges.
In other experiments, material modified 1020 surfaces being in turn laminated to the ELR material 360 in the c face being arranged essentially parallel to crystal structure 300.These test results (not being otherwise noted) show, the surface being parallel to the ELR material 360 in c face with material modified 1020 laminations does not produce any such as those discrete step (such as, discrete step 1410) described above.These test results show, make not have with wherein ELR material 360 (or trend towards do not have) to show the surface modification of the vertical modification ELR material 360 in the direction of resistance phenomenon, do not improve the operating characteristic of unmodified ELR material.In other words, make these surface modifications of ELR material 360 can not retaining hole 310.According to various principle of the present invention, (or trend towards do not have) material modifiedly should not had to show the surface laminated of the parallel ELR material in the direction of resistance phenomenon with wherein ELR material.More specifically, and such as, about ELR material 360 (shown in Fig. 3), in order to retaining hole 310, material modified 1020 " a-c " face or " b-c " faces (these two faces are parallel to c-axis) that should be bonded to the crystal structure 300 in ELR material 360 (it trends towards not apparent resistance phenomenon on the direction of c-axis).
Figure 22 shows according to the layout 2200 of alternating layer comprising ELR material 360 and material modified 1020 that each realizes for transmitting additional charge according to the present invention.Can use various deposition technique by such be deposited to over each other.Various technology can be used to improve the aligning of the crystal structure 300 in each layer of ELR material 360.Improve the aligning of crystal structure 300 can cause increasing the length of hole 310 by crystal structure 300, thus can be provided in higher temperature place and/or there is the work of enhanced charge transmittability.Each interface between material modified 1020 and the adjacent layer of ELR material 360, this layout 2200 provides the hole 310 of accelerating in modification ELR material 1060.The hole 310 of accelerating can increase the charge transport ability of layout 2200.
In realizations more of the present invention, the layer of any amount can be used.More of the present invention during realize, other ELR materials can be used and/or other are material modified.In realizations more of the present invention, can use other materials (such as between ELR material 360 and the layer pairs of material modified 1020, insulator, conductor or other materials) extra play, to alleviate various effect (such as, the migration of magnetic effect, material or other effects) or with the characteristic strengthening the modification ELR material 1060 formed in these layer pairs.In realizations more of the present invention, not every layer is all paired.In other words, layout 2200 can have one or more (that is, not paired) layers additionally of ELR material 360, or one or more layers additionally of material modified 1020.
Figure 23 shows the extra play 2310 (being illustrated as a layer 2310A, layer 2310B, layer 2310C and layer 2310D) according to the modified crystal structures 1010 in the modification ELR material 1060 of various realization of the present invention.As directed, modification ELR material 1060 comprises and forms from the atom with (Fig. 3's) crystal structure 300 each hole 310 (being illustrated as hole 310A, hole 310B and hole 310C) that material modified 1020 of key enters the different distance in material 1060.Hole 310A, closest to material modified 1020, is hole 310B afterwards, is next hole 310C etc. successively.According to various realization of the present invention, material modified 1020 is maximum relative to the impact of hole 310A, and afterwards relative to the impact that hole 310B is less, following is successively less impact etc. relative to hole 310C.According to more of the present invention realize, because hole 310A is close to material modified 1020, so compare hole 310B or hole 310C, material modified 1020 should retaining hole 310A better; Similarly, because hole 310B is close to material modified 1020, so compare hole 310C, material modified 1020 should retaining hole 310B better, etc.According to more of the present invention realize, because hole 310A is close to material modified 1020, so compare the cross section of any one of hole 310B or hole 310C, material modified 1020 should the cross section of retaining hole 310A better; Similarly, because hole 310B is close to material modified 1020, so compare the cross section of hole 310C, material modified 1020 should the cross section of retaining hole 310B better, etc.According to realizations more of the present invention, because hole 310A is close to material modified 1020, so compared at specified temp place on the impact of the charge transport ability of any one of hole 310B or hole 310C, material modified 1020 have larger impact in this specific temperature place charge transport ability on hole 310A; Similarly, because hole 310B is close to material modified 1020, so compared to the impact at specified temp place on the charge transport ability of hole 310C, material modified 1020 have larger impact in this specific temperature place charge transport ability on hole 310B, etc.According to more of the present invention realize, because hole 310A is close to material modified 1020, so compared to the transferring charge of any one of passing hole 310B or hole 310C, material modified 1020 transferring charge that should strengthen passing hole 310A; Similarly, because hole 310B is close to material modified 1020, so compared to the transferring charge of passing hole 310C, material modified 1020 transferring charge that should strengthen passing hole 310B, etc.
Various test result described above, such as, the test result 1400 of Figure 14, and other, support these aspects of various realization of the present invention, that is, usually, this material modified 1020 changes relative to their proximity to one another the impact in hole 310.Particularly, when those holes 310 in certain layer 2310 (or more rightly, those holes 310 be formed between each adjacent layer 2310 as shown in the figure) transmission charge until the charge transport ability in this hole 310 time, each discrete step 1410 in test result 1400 can correspond to the change of the electric charge carried by modification ELR material 1060.Closely correspond to the discrete step 1410 at higher temperature place close to those holes 310 in the layer 2310 of material modified 1020, and correspond to the discrete step 1410 at lower temperature place further from those holes 310 in the layer 2310 of material modified 1020.Discrete step 1410 is " discrete ", its implication reaches their maximum charge transmittability in the hole 310 (that is, the hole 310A between layer 2310A and 2310B) of given relative distance apart from material modified 1020 fast at specified temp place transmission charge.Due to the distance that increases and therefore material modified 1020 impacts weakened on those holes 310, when the hole 310 that the distance with material modified 1020 increases (namely, hole 310B between layer 2310B and 2310C) when lower temperature place transmission charge, arrive another discrete step 1410.Each discrete step 1410 corresponds to another group hole 310, based on they and material modified 1020 distance start to carry electric charge.But at certain distance, material modified 1020 can be under-effected to a some holes 310, with than them in other modes time higher temperature place make them carry electric charge; Therefore, at the temperature place consistent with ELR material 360, such hole 310 transmission charge.
During realize, the distance between material modified 1020 and hole 310 is reduced, to increase by material modified 1020 impacts on more porous 310 more of the present invention.In fact, at discrete step 1410 place relevant to higher temperature, more porous 310 should transmission charge.Such as, in the layout 2200 of Figure 22 and according to various realization of the present invention, in order to reduce the distance between the hole 310 and material modified 1020 in ELR material 360, can make multilayer ELR material 360 only has several structure cell thick to be formed.Reduce this distance at given temperature place should increase by the quantity in material modified 1020 holes affected 310.Reduce the quantity that this distance is also increased in the alternating layer of the ELR material 360 in the given gross thickness of layout 2200, thus increase the total electrical charge transmittability of layout 2200.
Figure 24 shows the film 2400 of the ELR material 2410 be formed on substrate 2420, but substrate 2420 can be optional in various realization of the present invention.In various realization of the present invention, film 2400 can be formed as having the band being such as greater than 10cm, 1m, 1km or more length.Such band can be useful, such as, as ELR conductor or ELR wire.As understood, although describe various realization of the present invention with reference to ELR film, such realization also can be applied to ELR band.
For illustrative purposes, as shown in figure 24, film 2400 has first type surface 2430 and main shaft 2440.The axle that main shaft 2440 extends corresponding to the length (relative to the width of film 2400 or the thickness of film 2400) along film 2400.Main shaft 2440 corresponds to wherein electric charge and flows through the principal direction of film 2400.As shown in figure 24, first type surface 2430 corresponds to the major surfaces of film 2400, and corresponds to the surface defined by width and the length of film 2400.Should be appreciated that without departing from the scope of the invention, film 2400 can have different length, width and/or thickness.
In realizations more of the present invention, during the preparation of film 2400, the crystal structure of ELR material 2410 may be oriented to the first type surface 2430 making its c-axis be substantially perpendicular to film 2400, and any one of a axle of their respective crystal structures or b axle is arranged essentially parallel to main shaft 2440.Therefore, as shown in figure 24, c-axis is used as reference by name, and in order to describe the object of various realization of the present invention, not concrete mark a axle and b axle, reflect their interchangeability.In some manufacturing process of film 2400, the crystal structure of ELR material may be oriented to make in c face any give alignment can be substantially parallel with main shaft 2440.
For illustrative purposes, the film 2400 (being included in the film 2400 shown in Figure 24) having their c-axis of crystal structure being separately substantially perpendicular to first type surface 2430 orientation is called as " c film " (that is, c film 2400).There is the c film 2400 of the ELR material 2410 be made up of YBCO, such as, can purchased from AmericanSuperconductorsTM (such as, 344 superconductors-type 348C) or ThevaD ü nnschichttechnikGmbH (such as, HTS coating conductor).
As understood, in realizations more of the present invention, substrate 2420 can comprise backing material, includes but not limited to, the polycrystalline material of MgO, STO, LSGO, such as metal or pottery, inert oxide material, cubic oxide thing material, rare earth oxide material or other backing materials.
According to various realization of the present invention (with as will be described in further detail below), material modified 1020 are in turn laminated in the appropriate surfaces of ELR material 2410, and wherein the appropriate surfaces of ELR material 2410 corresponds to any surface of the c-axis of the crystal structure being substantially not orthogonal to ELR material 2410.In other words, the suitable surface of ELR material 2410 can correspond to any surface being substantially not parallel to first type surface 2430.More of the present invention during realize, the suitable surface of ELR material 2410 can corresponding to any surface of c-axis of crystal structure being basically parallel to ELR material 2410.In realizations more of the present invention, the suitable surface of ELR material 2410 can correspond to any surface of the c-axis of the crystal structure being substantially not orthogonal to ELR material 2410.In order to the applicable surface of modification c film 2400 (its first type surface 2430 is basically perpendicular to the c-axis of the crystal structure of ELR material 2410), the applicable surface of ELR material 2410 can be formed in above c film 2400 or inside.More of the present invention during realize, can process first type surface 2430 with expose the material modified c film 2400 of lamination thereon above or the suitable surface of the ELR material 2410 of inside.More of the present invention during realize, can process first type surface 2430 with expose the material modified c film 2400 of lamination thereon above or one or more holes 210 of the ELR material 2410 of inside.Should be appreciated that in various realization of the present invention, except suitable surface above-mentioned, can be laminated to material modified on first type surface 2430.
Various patterning techniques can be comprised to the process of the first type surface 2430 of c film 2400 for exposing the suitable surface of ELR material 2410 and/or hole 210, comprise various wet processing or dry process.Various wet processing can comprise stripping, chemical etching or other technique, and wherein any one can comprise the use of chemicals, and it can expose other surfaces various in c film 2400.Various dry process can comprise ion or electron beam irradiation, laser direct-writing, laser ablation or laser reactive patterning maybe can expose the various suitable surface of the ELR material 2410 in c film 2400 and/or other techniques in hole 210.
As shown in figure 25, the first type surface 2430 of c film 2400 can be processed to expose the suitable surface in c film 2400.Such as, c film 2400 can be processed to expose the face in the b face being basically parallel to crystal structure 100 in c film 2400, or in c film 2400, be arranged essentially parallel to the face in a face of crystal structure 100.More generally, in realizations more of the present invention, the first type surface 2430 of c film 2400 can be processed to expose the suitable surface corresponding to a/bc face (that is, being basically parallel to the face in ab face) in c film 2400.More of the present invention during realize, the first type surface 2430 that can process c film is to expose in c film 2400 with first type surface 2430 uneven any substantially.More of the present invention during realize, the first type surface 2430 that can process c film is substantially not parallel with first type surface 2430 but also with main shaft 2440 uneven any substantially to expose in c film 2400.Any in these faces, comprise the combination in these faces, the suitable surface of ELR material 2410 on c film 2400 or interior can be corresponded to.According to various realization of the present invention, the suitable surface of ELR material 2410 provides access or hole 210 otherwise in " exposure " ELR material 2410, for the object in the such hole 210 of Bao Te.
In realizations more of the present invention, as shown in figure 25, process first type surface 2430 to form one or more groove 2510 in first type surface 2430.Groove 2510 comprises one or more suitable surface (that is, being basically parallel to the surface outside first type surface 2430), deposition modified material thereon.To understand, although it is the shape of cross section of rectangle substantially that groove 2510 shown in Figure 25 has, the cross section of other shapes can be used.In realizations more of the present invention, the width of groove 2510 can be greater than 10nm.More of the present invention realize in and as shown in figure 25, the degree of depth of groove 2510 can be less than the whole thickness of the ELR material 2410 of c film 2400.More of the present invention realize in and as shown in figure 26, the degree of depth of groove 2510 can be substantially equal to the thickness of the ELR material 2410 of c film 2400.More of the present invention during realize, the ELR material 2410 entering in substrate 2420 that the degree of depth of groove 2510 can extend through c film 2400 (does not illustrate) in addition.In realizations more of the present invention, the degree of depth of groove 2510 can correspond to the thickness (not illustrating in addition) of one or more unit of ELR material 2410.Various technology can be used, such as, but not limited to, laser ablation or other technologies, in first type surface 2430, form groove 2510.
In realizations more of the present invention, the length of groove 2510 can correspond to the whole length of c film 2400.More of the present invention during realize, groove 2510 is substantially parallel to each other and be arranged essentially parallel to main shaft 2440.In realizations more of the present invention, according to various aspects of the present invention, groove 2510 can present various structure and/or layout.Such as, groove 2510 can by any way and/or direction extend, and straight line, curve and/or along other geometries in the cross section of the vicissitudinous size of its length tool and/or shape can be comprised.
Although various aspect of the present invention is described as be in first type surface 2430 and forms groove 2510, will understand, and comprise the projection on the suitable surface of ELR material 2410, angle or projection and can be formed on substrate 2420 to complete similar geometry.
According to various realization of the present invention, c film 2400 can be modified the c film forming various modification.Such as, see Figure 27, can by material modified 2720 (namely, material modified 1020, material modified 1020) to be laminated on first type surface 2430 and to enter and be formed in unmodified c film (such as, c film 2400) first type surface 2430 in groove 2510 in, and to be therefore laminated on various suitable surperficial 2710 to form the c film 2700 of modification.Suitable surperficial 2710 can comprise any suitable surface discussed above.Although the suitable surface 2710 shown in Figure 27, perpendicular to first type surface 2430, is appreciated that this is optional from this specification.
During realize more of the present invention, as shown in figure 27, can be laminated to material modified 2720 on first type surface 2430 and enter groove 2510.In some implementations, such as, shown in Figure 28, various technology (such as, various polishing technology) can be used to remove material modified 2720 to form the c film 2800 of modification from first type surface 2430, make material modified 2720 to be only retained in groove 2510.In some implementations, can by only in groove 2510 lamination material modified 2720 complete the c film 2800 of modification.In other words, in some implementations, material modified 2720 can only be in turn laminated in groove 2510 and/or on suitable surface 2710, and do not make material modified 2720 to be laminated to first type surface 2430 maybe can be laminated make material modified 2720 not combine or otherwise adhere to first type surface 2430 (such as, using various mask technique).In realizations more of the present invention, various selectivity deposition technique can be adopted to make material modified 2720 to be laminated directly on suitable surface 2710.
According to various realization of the present invention, the thickness of in groove 2510 and/or on first type surface 2430 material modified 2720 can change.In realizations more of the present invention, the individual unit layer (that is, having the layer of the thickness of the individual unit being substantially equal to material modified 2720) of material modified 2720 can be laminated to groove 2510 suitable surperficial 2710 on and/or on first type surface 2430.More of the present invention realize in, two or more elementary layers of material modified 2720 can be laminated to groove 2510 suitable surperficial 2710 on and/or on first type surface 2430.
According to various realization of the present invention, the c film 2700,2800 (that is, with the c film 2400 of material modified 2720 modifications) of modification may be used for obtaining the operating characteristic of the one or more improvement exceeding those unmodified c films 2400.
As shown in figure 29, more of the present invention during realize, can via first type surface 2430 modification of chemical etching by unmodified c film 2400, to expose or otherwise to increase the available suitable area of surperficial 2710 on first type surface 2430.In realizations more of the present invention, a kind of mode of the area of the characterization increase of suitable surperficial 2710 in first type surface 2430 can based on root mean square (RMS) surface roughness of the first type surface 2430 of c film 2400.More of the present invention during realize, due to chemical etching, the first type surface 2430 of c film 2400 can comprise and has the etching surface 2910 of surface roughness of about 1nm to about 50nm scope.Such as, atomic force microscope (AFM), scanning tunnel microscope (STM) or SEM can be used to determine rms surface roughness, and rms surface roughness based on the assembly average of R scope, wherein can will understand the scope that R scope can be the radius (r) of crystallite dimension.After chemical etching, the etching surface 2910 of c film 2900 can correspond to suitable surperficial 2710 of ELR material 2410.
As shown in figure 30, after chemical etching, can be laminated on the etching surface 2910 of c film 2900 by material modified 2720, to form the c film 3000 of modification.Material modified 2720 can cover substantially whole surfaces 2910 and according to various realization of the present invention, the thickness of material modified 2720 can change.In realizations more of the present invention, the individual unit of material modified 2720 can be pressed onto on etching surface 2910 layer by layer.In realizations more of the present invention, two or more elementary layers of material modified 2720 can be laminated on etching surface 2910.
In realizations more of the present invention, the film being different from the orientation of c film 2400 orientation of the crystal structure with ELR material can be used.Such as, with reference to Figure 31, and according to various realization of the present invention, with regard to c film 2400, replace orientation perpendicular to the c-axis of first type surface 2430, film 3100 can have orientation perpendicular to the c-axis of main shaft 2440 and the orientation b axle perpendicular to the ELR material 3110 of first type surface 2430.Similarly, film 3100 can have orientation perpendicular to the c-axis of main shaft 2440 and the orientation a axle perpendicular to the ELR material 3110 of first type surface 2430.In realizations more of the present invention, film 3100 can have orientation perpendicular to the c-axis of main shaft 2440 and any line being parallel to the c face along main shaft 2440 orientation.As shown in figure 31, in of the present invention these realize, film 3100 comprises ELR material 3110, has its crystal structure orientation perpendicular to main shaft 2440 and is parallel to the c-axis of first type surface 3130, and be commonly referred to a-b film 3100 at this.Although Figure 31 shows other two axles of the crystal structure in specific orientation, as understood, such orientation will be optional.As shown in the figure, a-b film 3100 can comprise optional substrate 2420 (the same with c film 2400).
In realizations more of the present invention, a-b film 3100 is a films, and it has the c-axis of the crystal structure of the ELR material 3110 of orientation as shown in figure 31 and a axle perpendicular to first type surface 3130.Such a film can be formed by various technology, be included in 17-22 day in September, 2000, Virginia, seabeach, Virginia, application superconduction meeting minutes in 2000, those technology described in " the HighCurrentY-Ba-Cu-OCoatedConductorusingMetalOrganicChem icalVaporDepositionandIonBeamAssistedDeposition " of the people such as Selvamanickam, V., are incorporated in this by its full content by reference.In some implementations, a film can grow on the substrate 2420 formed by llowing group of materials: LGSO, LaSrAlO4, NdCaAlO4, Nd2CuO4 or CaNdAlO4.As understood, other backing material can be used.
In realizations more of the present invention, a-b film 3100 is b films, has the c-axis of the crystal structure of the ELR material 3110 of orientation as shown in figure 31 and the b axle perpendicular to first type surface 3130.
According to various realization of the present invention, the first type surface 3130 of a-b film 3100 corresponds to suitably surface 2710.In some realizations adopting a-b film 3100, the suitable surface forming ELR material 3110 can comprise formation a-b film 3100.Therefore, for the realization of the present invention comprising a-b film 3100, can be laminated on the first type surface 3130 of a-b film 3100 by material modified 2720, to obtain modification a-b film 3200 as shown in figure 32.In realizations more of the present invention, material modified 2720 can all or part of first type surface 3130 covering a-b film 3100.In realizations more of the present invention, the thickness of material modified 2720 can change as discussed above.More specifically, in realizations more of the present invention, can the individual unit of material modified 2720 be pressed onto on the first type surface 3130 of a-b film 3100 layer by layer; And in realizations more of the present invention, two or more elementary layers of material modified 2720 can be laminated on the first type surface 3130 of a-b film 3100.More of the present invention during realize, such as, a-b film 3100 can slotted or otherwise modification as discussed about c film 2400 above, be increased in the ELR material 3110 of lamination on it material modified 2720 suitable surperficial 2710 total area.
As understood, be not utilize a-b film 3100, realizations more of the present invention can utilize has its crystal structure to be similar to the layer of the ELR material 2410 of the mode orientation of a-b film 3100.
In realizations more of the present invention (otherwise not illustrating), buffering or insulating material can be laminated in aforementioned films any one material modified 2720 subsequently.In these realize, buffering or insulating material and substrate are formed to be had " sandwich " that is positioned at ELR material 2410,3110 and material modified 2720 betwixt.As understood, buffering or insulating material can be laminated on material modified 2720.
Any one in previous materials can be laminated on any other material.Such as, ELR material layer can be pressed onto material modified on.Similarly, can be laminated to material modified on ELR material.In addition, as understood, lamination can comprise combination, will be shaped or deposit a kind of material on another kind of material.Lamination can use any usually known lamination, comprise, but be not limited to, pulsed laser deposition, evaporation (comprising coevaporation, electron beam evaporation and activation response evaporation), sputtering (comprising magnetron sputtering, ion beam sputtering and ion assisted sputtering), cathodic arc deposition, CVD, organic metal CVD, plasma enhanced CVD, molecular beam epitaxy, sol-gel technology, liquid phase epitaxy and/or other laminations.
In various realization of the present invention, can arrange ELR material 2410,3110, the multilayer of material modified 2720, buffering or insulating barrier and/or substrate 1120.Figure 33 shows the various exemplary arrangement of these layers according to various realization of the present invention.In some implementations, given layer can comprise and is also used as material modified 2720 of buffering or insulating barrier or substrate.To understand as read this specification, the combination that other are arranged or arrange can be used.In addition, in realizations more of the present invention, in given layout, the various layers of ELR material can have orientation different from each other.Such as, in layout, one deck of ELR material can have a axle of its crystal structure along main shaft 2440 orientation, and in arranging, another layer of ELR material can have the b axle of its crystal structure along main shaft 2440 orientation.Other orientations can be used in given layout according to various realization of the present invention.
Figure 34 shows the process for creating modification ELR material according to various realization of the present invention.In operation 3410, on ELR material or middle formation suitably surface 2710.More of the present invention during realize, ELR material exists for the ELR material 2410 of c film 2400, by the first type surface 2430 that exposes c film 2400 or in suitable surperficial 2710 form suitably surface 2710.In realizations more of the present invention, any one the modification first type surface 2430 in can combining by using wet method discussed above or dry method treatment technology or its exposes the suitable surface of ELR material 2410.In realizations more of the present invention, can by chemical etching modification first type surface 2430 as discussed above.
In realizations more of the present invention, wherein ELR material exists for the ELR material 3110 of (having or do not have substrate 2420) a-b film 3100, form suitably surface 2710 by being laminated on surface by ELR material 3110 (with suitably orientation as above), it can comprise or not comprise substrate 2420.
In realizations more of the present invention, suitably surface 2710 comprises the surface of the ELR material being parallel to ab face.In realizations more of the present invention, suitably surface 2710 comprises the face of the ELR material being parallel to b face.In realizations more of the present invention, suitably surface 2710 comprises the face of the ELR material being parallel to a face.In realizations more of the present invention, suitably surface 2710 comprises one or more of the ELR material being parallel to different ab faces.In realizations more of the present invention, suitably surface 2710 comprises one or more of the c-axis being substantially not orthogonal to ELR material.
In realizations more of the present invention, various optional operation can be performed.Such as, in realizations more of the present invention, can annealing in process suitably surface 2710 or ELR material.In realizations more of the present invention, this annealing can be furnace annealing or rapid thermal treatment (RTP) annealing in process.More of the present invention during realize, can predetermined time section, carry out such annealing in one or more annealing operations in temperature range and other parameters.In addition, as understood, can anneal in chemical vapour deposition (CVD) (CVD) chamber, and annealing can comprise and makes suitably surface 2710 stand the combination in any of temperature and pressure with lasting predetermined time, this can strengthen suitably surface 2710.Such annealing is performed when can and have in gas atmosphere or not there is plasma enhancing.
In operation 3420, can be laminated to material modified 2720 on one or more suitable surperficial 2710.In realizations more of the present invention, various lamination can be used, comprise various technology recited above, be laminated to material modified 2720 on suitable surface 2710.
Figure 35 shows the example of the additional treatments that can perform during operation 3420 according to various realization of the present invention.In operation 3510, can polishing suitably surface 2710.In realizations more of the present invention, as discussed above, one or many polishing can be used.
In operation 3520, any usually known mask technique can be used to shelter each surface except suitable surface 2710.In some implementations, all surface except suitable surface 2710 can be sheltered.In realizations more of the present invention, the one or more surfaces except suitable surface 2710 can be sheltered.
In operation 3530, any usually known lamination discussed above can be used to be laminated to (or in some implementations and as shown in figure 35, above depositing to) by material modified 2720 suitably on surface 2710.In realizations more of the present invention, MBE can be utilized to deposit to material modified 2720 on suitable surface 2710.In realizations more of the present invention, PLD can be utilized to deposit to material modified 2720 on suitable surface 2710.In realizations more of the present invention, CVD can be utilized to deposit to material modified 2720 on suitable surface 2710.In realizations more of the present invention, material modified 2720 of about 40nm can be deposited on suitable surface 2710, but after tested less to some material modified 2720 (such as, cobalt) of 1.7nm.In various realization of the present invention, material modified 2450 of less amount can be used, such as, the magnitude of a few dust.In realizations more of the present invention, can deposit on suitable surface 2710 in true chamber by material modified 2720, this vacuum can have 5 × 10-6 holder or lower pressure.Those the various chambers comprised for the treatment of semiconductor wafer can be used.In realizations more of the present invention, CVD process described here can be carried out, the reaction chamber that described CVD reactor such as obtains from the trade name 7000 of Genus company (Sani Wei Er city, California), the reaction chamber obtained for 5000 from the trade name of Applied Materials (Santa Clara) or the reaction chamber obtained from the trade name Prism in Novelus company (San Jose city) in CVD reactor.But, any reaction chamber being suitable for performing MBE, PLD or CVD can be used.
Figure 36 shows the process for the formation of modification ELR material according to various realization of the present invention.Particularly, Figure 36 show for the formation of and/or the process of modification a-b film 3100.In optional operation 3610, by buffer layer deposition on substrate 2420.In realizations more of the present invention, resilient coating comprises PBCO or other suitable padded coamings.In realizations more of the present invention, substrate 2420 comprises LSGO or other suitable backing materials.In operation 3620, as above about as described in Figure 31, ELR material 3110 is laminated to and has on the substrate 2420 of suitable orientation.As understood, according to can selection operation 3610, ELR material 3110 be laminated on substrate 2420 or resilient coating.In realizations more of the present invention, the layer of ELR material 3110 is the thickness of two or more elementary layer.In realizations more of the present invention, the layer of ELR material 3110 is the thickness of some Institutional Layers.In realizations more of the present invention, the layer of ELR material 3110 is the thickness of several Institutional Layer.In realizations more of the present invention, the layer of ELR material 3110 is the thickness of many elementary layers.In realizations more of the present invention, IBAD technique is utilized to be laminated on substrate 2420 by ELR material 3110.In realizations more of the present invention, ELR material 3110 is in turn laminated on substrate 2420 and is subject to magnetic fields to improve the aligning of the crystal structure in ELR material 3110 simultaneously.
In selection operation 3630, suitable surperficial 2710 (it is relative to the a-b films 3100, corresponding to first type surface 3130) of above-mentioned various technology polishing ELR materials 3110 can utilized.More of the present invention realize in, impurity is not incorporated into ELR material 3110 suitable surperficial 2710 on and complete polishing.In realizations more of the present invention, complete polishing and do not destroy clean chamber.In operation 3640, be laminated to material modified 2720 on suitable surface 2710.Can in selection operation 3650, the cladding material such as but not limited to silver be in turn laminated on whole material modified 2720.
In various realization of the present invention, no matter be used in body, be incorporated in film (such as, ELR material 2410 in c film 2400, the ELR material 3110 in a-b film 3100 or other films or band) in, still other modes are used in (such as, wire, paper tinsel, nano wire etc.) in, modification ELR material 1060 can be incorporated in various product as the described herein, system and/or equipment.
As understood, although describe various realization of the present invention below in " modification " ELR material, various realization can comprise the new ELR material of the operating characteristic with improvement, and not depart from scope of invention.In addition, as understood, various realization can comprise any materials showing some or all improvement characteristics described here, and not depart from the scope of the present invention.That is, various realization can comprise the ELR material of modification, ELR material with holes, unconventional ELR material and/or show some or all the other materials of improvement characteristic described here.In various implementations, ELR material described here, the ELR material of such as modification and/or ELR material with holes can be parts or be formed as multiple different carrying current assembly, as film/band, wire, nano wire etc., to be used in equipment of the present invention, system and other realizations.Be below some examples of carrying current assembly, but those of ordinary skill will be understood, can also be used other:
The width of nano wire-have tens nanometers or less magnitude or diameter and the nanostructure of usual unrestricted length, for the formation of section, contour, coil and/or can carry electric current from a point to another point there are other structures extremely low-resistance.Nanostructure can form the various nano thread structures comprising separate structure, is integrated on substrate or is integrated in substrate, implements on the support structure or is implemented in supporting construction, and other nano thread structures;
Paper tinsel-by ELR material configuration at flexible membrane/bring or be configured to flexible membrane/band, such as, but not limited to metal tape, and optionally with metal oxide-coated metal and/or the ELR material of buffering.Such as can texture be incorporated in band by using rolling to assist biaxial texture substrate (RABiTS) to process, or by without the ion beam on textured alloy substrate, such as by using ion beam assisted depositing (IBAD) process, the ceramic resilient coating of texture alternatively can be deposited.Other technologies can utilize chemical vapour deposition (CVD) CVD process, physical vapour deposition (PVD) (PVD) process, molecular beam epitaxy (MBE), atomic layer-layer molecular beam epitaxy (ALL-MBE) and other solution deposition techniques to obtain ELR band.
Wire-one or more ELR assembly can clip together to form large scale wire; And other carrying current assemblies.
Therefore, in some implementations, ELR material described here is made to be formed and/or be integrated in various carrying current assembly, in the equipment and/or can contribute to that ELR material is implemented into utilization, producing, change and/or transmit the electric energy of such as electric current and system.More effectively work with system compared with traditional equipment, work with comparing traditional equipment cost benefit larger with system, compare traditional equipment and system less works lavishly and other improve operating characteristic, these equipment and system can benefit from the operating characteristic of improvement.
show extremely low-resistance stacked combination body
This part of specification relates to Fig. 1-Z to Fig. 7-Z; Therefore all Reference numerals be included in this part relate to element in these figures.
In order to this description object and according to various realization of the present invention, the formation of material generally comprises ELR material, such as, but be not limited to, perovskite material (such as, YBCO etc.), and material modified or altered contents (interchangeable quote), such as: be applied to one or more layers of the altered contents of ELR material from outside; Contribute to one or more altered contents applying to strain in ELR material; One or more layers of different ELR materials, their one or more contributing to, applies strain in another outer field ELR material; Have one or more layers of the ELR material of different crystal orientation, their one or more contributing to, applies strain in another outer field ELR material; Contribute to one or more altered contents applying to strain in ELR material; Such as one or more altered contents above-described; And/or other altered contents.
In some implementations, the assembly of material can comprise one or more altered contents being applied to or being formed in on the ELR material in the electric charge face of ELR material and/or certain degree of approach of charge storage.Such as, the assembly of material can comprise the layer of YBCO and the material modified layer being applied to or being formed on the suitable surface of this YBCO layer.In some implementations, this surface is basically parallel to the c-axis of YBCO.In some implementations, this surface is basically perpendicular to a axle of YBCO.In some implementations, this surface is basically perpendicular to the b axle of YBCO.In some implementations, other suitable surface can be used.
In some implementations, altered contents is applied to ELR material and the one or more oxygen atoms in the crystal structure of ELR material can be caused to move in ELR material, form the oxygen concentration gradient that the crystal structure of ELR material is strained.In some implementations, altered contents, such as chromium, can, as " getter " of the oxygen atom in ELR material, cause oxygen atom to move to altered contents thus, and next this makes the regional in the crystal structure of ELR material or part strain.
In some implementations, the assembly of material can comprise the multilayer of different ELR material, different ELR material like this comprises different atoms, include but not limited to, relative to each other different rare earth metal atom (such as YBCO to DyBCO, YBCO to NBCO, DyBCO to NBCO etc.); Different oxygen content (such as, O in YBCO relative to each other in its crystal structure 6and O 7between oxygen stoichiometry/component); And/or relative to each other different crystal orientation (such as, a axle YBCO is to b axle YBCO etc.).Such assembly can lamination in the following manner, makes the different layers of ELR material can regional in strain composition body or part.
More of the present invention during realize, the strain in the regional of assembly or part affects the hole in the crystal structure of ELR material, to improve the operating characteristic (such as, working temperature, carrying current capacity etc.) of ELR material.
The modification of material (such as there is the material of crystal structure), can cause for higher than expect temperature place electric current within this material, this material list reveals lower resistance, such as extremely low resistance.In some implementations, as discussed above, this modification can comprise the applying of material modified layer or be formed on suitable surface.The material modified layer applied or formed can cause strain or otherwise power is applied to form this material some or all atoms of crystal structure and/or key on.This power or strain can change this material, make this material list reveal different resistance characteristics, such as lower resistance or extremely low resistance.That is, cause the power in this material or strain can: cause this material some position within this material and/or region to produce, show and/or keep certain oxygen diffusion gradient; Cause in this material charge storage within this material or the contiguous oxygen diffusion producing, show and/or keep certain level; And/or cause the crystal structure distortion of this material, bend, open, close, hardening or otherwise keep or change orientation and/or geometry, such as keep relative to the hole in this material or change geometry, this can contribute to electronics from a location transmission to another location etc.
Various realization of the present invention can contribute to power or strain being applied to ELR material or its inside.In some implementations, power can be applied to each several part of ELR material from outside and/or non-invasi.In some implementations, power can cause being applied to internal stress in each several part of ELR material, strain or other power.Such as, these parts can be parts for the ELR material comprising oxygen atom, comprise a part for the ELR material in the copper-oxygen face of atom, comprise a part for the ELR material of charge storage, comprise a part for the ELR material in the hole in the crystal structure of ELR material, correspond to (namely, be basically parallel to) part of the ELR material in a face of this material, correspond to (namely, be basically parallel to) part of the ELR material in the b face of this material, correspond to a part for the ELR material in the face substantially parallel with the c-axis of this material, be positioned near or the part of ELR material close to the surface of this material, or other parts of ELR material.
Use various observation described here, various realization of the present invention can be implemented as the various assemblys of material, is described in detail now.
Various realization of the present invention can comprise various assembly, such as has ELR material and material modified assembly, is configured and/or is suitable for carrying electric current from a position to another position.That is, inter alia, such assembly conduction electron is from a position to another position.
In some implementations, various assembly comprises that to be applied to or to be formed in one or more on the suitable surface of ELR material material modified.Fig. 1-Z shows the assembly 100 (at this also referred to as modification ELR material 100) of modification ELR material, there is ELR material 110 (at this also referred to as unmodified ELR material 110) and be applied to ELR material 110 surface material modified 120.
In some implementations, ELR material 110 can be the representative of the superconductor race being commonly referred to mixed-valence copper hydrochlorate perovskite as discussed above.Such mixed-valence copper hydrochlorate perovskite material can also include, but not limited to the cationic various of material and substitute.The mixed-valence copper hydrochlorate perovskite material of aforementioned name can refer to the general class material that wherein there is many different proportionings, such as comprises the class of perovskite material of rare earth metal (Re), barium (Ba), copper (Cu) and oxygen (O) or " ReBCO ".The ReBCO material of example can comprise YBCO, NBCO, HoBCO, GdBCO, DyBCO and other, such as there is the stoichiometric other materials of suitable 1-2-3.
In some implementations, ELR material 110 can comprise the HTS material (" non-perovskite material ") outside mixed-valence copper hydrochlorate perovskite material race.Non-perovskite material like this can include, but not limited to iron pnictide, magnesium diboride (MgB 2) and other non-perovskites.In some implementations, ELR material 110 can be other superconductors or non-superconducting material.
In some implementations, material modified 120 can be metal, the such as metal oxide of chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium or beryllium or these metals.In some implementations, material modified 120 can be any material that strain can be applied to ELR material 110 or its inside, such as there is the metal of high oxygen affinity, " getter " material, there is the material (comprising other ELR material) of the one or more lattice constants being different from those ELR materials 110, etc.Such as, in some implementations, in order to cause strain in ELR material 110, material modified 120 can have strong oxygen affinity, such as easily combine, attract or the material of " acquisition " oxygen or the oxygen content changed in ELR material and/or oxygen distribution.In some implementations, in order to cause strain in ELR material 110, material modified 120 can have the one or more lattice constants with those ELR material 110 mismatches.
Such as, ELR material 110 deposited on silicon chromium material modified 120 an effect be can set up oxygen gradient at the near surface of ELR material 110.In some implementations, modified layer 120 be placed on the surface being basically perpendicular to a axle of ELR material or the ELR material of b axle, inter alia, this can cause setting up oxygen concentration gradient in ELR material.In some implementations, modified layer 120 be placed on the surface of ELR material of the c-axis being basically parallel to ELR material, inter alia, this can cause setting up oxygen concentration gradient etc. in ELR material.
In some implementations, ELR material 110 comprises electric charge face, and it comprises one or more atoms that part forms hole.Such as, YBCO is formed by the various atoms of yttrium (" Y "), barium (" Ba "), copper (" Cu ") and oxygen (" O ").Formed the hole in YBCO by the atom of hole atom and yttrium, copper and oxygen, and form the electric charge face in YBCO by the various atoms of copper (" Cu ") and oxygen (" O ").
Fig. 2-Z shows the assembly 200 comprising substrate 230, two or more modification assembly 210,215 and the ELR material 220 between modification assembly 210,215.Particularly, modification assembly 210,215 is bonded to or on the top surface that is formed in ELR material 220 and basal surface respectively.In realizations more of the present invention, the top and bottom surface of ELR material 220 is suitable surfaces (such as, being basically perpendicular to the surface etc. of a axle of ELR material 220) of ELR material 220.Therefore, at the top surface close to ELR material 220, assembly 200 can be strained by modification assembly 210, and at the basal surface close to ELR material 220, assembly 200 be strained by the modification assembly 215 be positioned on substrate 230.
By being applied on one or more surfaces of ELR material by material modified, various realization of the present invention can controlled strain applying and/or can in each position of ELR material, such as make ELR material strain having one or more positions in electric charge face, the one or more structure cells at ELR material, the one or more hole at ELR material and/or other positions.
Realizations more of the present invention can comprise the superlattice of ELR material layer, and it can be used to one or more layers ELR properties of materials strengthening superlattice.
Fig. 3-Z is the structure chart comprising the assembly 300 of different ELR material layers according to various realization of the present invention.More specifically, assembly 300 comprises the ground floor 310 of the ELR material being labeled as " ELR-X " and is labeled as the second layer 320 of ELR material of " ELR-Y ".As shown in Fig. 3-Z, ground floor 310 is formed in or is applied on substrate 330, and the second layer 320 is formed in or is applied on ground floor 310.As understood, in realizations more of the present invention, substrate 330 will be optional.Only have ground floor 310 and the second layer 320 although be depicted as, assembly 300 can comprise the right ground floor 310 of any amount that pattern between ground floor 310 and the second layer 320 alternately formed and the second layer 320.In some implementations, ELR-X corresponds to an ELR material, and ELR-Y is corresponding to the 2nd ELR material being different from an ELR material.Such as, in realizations more of the present invention, ELR-X can correspond to YBCO, and ELR-Y can correspond to NBCO.As understood, other ELR material can be used.
Fig. 4-Z is the structure chart comprising the assembly 400 of the multi-form layer of identical ELR material according to various realization of the present invention.More specifically, assembly 400 ground floor 410 that comprises the ELR material of the first form being labeled as " ELR-X form 1 " and the second layer 420 of identical ELR material of the second form being labeled as " ELR-X form 2 ".In some implementations, identical basic ELR material has different forms, such as, but not limited to, different crystal orientations, different oxygen stoichiometry/component (O such as, in YBCO 6and O 7deng), different variants and other different forms.As understood, other forms of identical ELR material can be used.As directed, ground floor 410 is formed in or is applied on substrate 430, and the second layer 420 is formed in or is applied on ground floor 410.As understood, in realizations more of the present invention, substrate 430 will be optional.Only have ground floor 410 and the second layer 420 although be depicted as, assembly 400 can comprise the right ground floor 410 of any amount that pattern between ground floor 410 and the second layer 420 alternately formed and the second layer 420.
As discussed, assembly 400 can comprise the layer of the multi-form or variant of identical ELR material (such as, ReBCO), and these multi-form identical ELR materials can cause straining to ELR material one or more layers or its inner.Such as, the oxygen content between modification layer (such as, changes O in YBCO 6and O 7between oxygen stoichiometry/component) lattice mismatch between layer can be caused, this can make the key of the crystal structure of the ELR material in layer strain.And such as, the crystal orientation (such as, one deck of ELR material has a axle orientation, and another layer of ELR material has b axle orientation) of the ELR material between modification layer also can cause the lattice mismatch between layer, thus causes similar strain.
Fig. 5-Z shows the assembly 500 comprising multiple different ELR material layers.As directed, assembly 500 comprise the ELR material being labeled as " ELR-X " ground floor 510, be labeled as the second layer 520 of the ELR material of " ELR-Y " and be labeled as the third layer 530 of ELR material of " ELR-Z ".As directed, ground floor 530 is formed in or is applied on substrate 540, and the second layer 510 is formed in or is applied on ground floor 530, and third layer 520 is formed in or is applied on the second layer 510.As understood, in realizations more of the present invention, substrate 530 will be optional.More of the present invention during realize, the ELR material be included in the layer of assembly 500 can be completely different ELR material (as above with reference to figure 3-Z discuss) or identical ELR material multi-form (as above with reference to figure 4-Z discuss).
Although otherwise do not illustrate in Fig. 3-Z-5-Z, other layers various of non-ELR material can be included in comprise and be interspersed in shown in Fig. 5-Z one or more layers between layer various assemblys 300,400,500 (or other any assemblys described here) in.
In order to make each layer generation stress/strain of ELR material, create the assembly 300,400,500 formed by different ELR materials or multi-form ELR material layer, various realization of the present invention can be made to utilize various ReBCO material (such as, YBCO and NBCO, except other) or there is similar lattice parameter other materials (such as, BSCCO and other) between lattice mismatch.In some implementations, Phonon frequency around the hole that the strain increased can change in the crystal structure being centered around these ELR materials and/or distribution and/or amplitude, the resistance of material is allowed to decline, improve operating characteristic, such as, but be not limited to work in the ELR state at higher temperature place, and other benefits.
In realizations more of the present invention, form the layer of the superlattice of assembly 300,400,500, make the suitable surface of the ELR material in these layers (surface such as, being basically perpendicular to a axle of ELR material, be basically perpendicular to ELR material b axle surface, be basically parallel to the surface etc. of the c-axis of ELR material) corresponding to the interface surface between each ELR material.In other words, the surface at the interface between the layer 520 and 510 of formation Fig. 5-Z, such as, corresponding to be basically perpendicular to both ELR-Y and ELR-X a axle, be basically perpendicular to the b axle of both ELR-Y and ELR-X or be otherwise basically parallel to the surface of c-axis of both ELR-X and ELR-Y.
Certainly, many layers of similar and/or different ELR material can be had in the assembly of various realization of the present invention.In some implementations, layer, the then deposit that can have a ReBCO material of the first thickness by deposition have the layer of the 2nd ReBCO material of the second thickness and layer that then deposition has a 3rd ReBCO material of the 3rd thickness forms assembly 500, and wherein at least the ReBCO material of the second layer has one or more lattice constants of those lattice constants of the material being different from first and third layer.In addition, first, second, and third thickness can be mutually the same, diverse or some are identical and other are different etc. each other.In order to improve the operating characteristic of this assembly, including, but not limited to inter alia, improving the various temperature of assembly, resistance and/or carrying current capacity, the different ReBCO layer of any amount and/or the thickness of layer can be deposited.
More of the present invention during realize, assembly can as laminated (bottom be to top):
ELR 1：ELR 2：ELR 1：ELR 2：ELR 1：ELR 2：ELR 1：ELR 2：＆。
More of the present invention during realize, assembly can as laminated (bottom be to top):
ELR 1：ELR 2：ELR 3：ELR 4：ELR 3：ELR 2：ELR 1：ELR 2：ELR 3：＆。
More of the present invention during realize, assembly can as laminated (bottom be to top):
ELR 1：ELR 2：ELR 3：ELR 4：ELR 3：ELR 4：ELR 3：ELR 4：ELR 3：＆。
More of the present invention during realize, assembly 500 can as laminated (bottom be to top):
ELR 1：ELR 2：ELR 3：ELR 2：ELR 3：ELR 2：ELR 3：ELR 2：ELR 3：＆。
Therefore, due to a variety of causes, such as in order to create the mismatch of lattice constant, in order to create controlled strain in one or more layers, in order to increase the carrying current capacity of assembly, in order to improve the manufacture of assembly, in order to improve the manufacturability each other on each layer, etc., these layers can be selected.In addition, the strain that the quantity of the thickness of these layers such as structure cell of every layer material is come in adjustment layer can be selected, to increase carrying current capacity, etc.
In realizations more of the present invention, the type of the quantity of layer, the type of ELR material in one or more layers, other the non-ELR materials in one or more layers, one or more layers thickness, one or more layers orientation, one or more layers order and/or other parameters of assembly can be modified, limit and/or select, to realize the manufacturability of characteristic desired by assembly or assembly, and other benefits.
Fig. 6-Z shows the example set zoarium 600 formed by the superlattice of the multilayer comprising various ELR material according to various realization of the present invention.As shown in Fig. 6-Z, assembly 600 comprises LaSrGaO4 (LSGO) substrate 610, has the top surface of a axle being basically perpendicular to this substrate.Other substrates can be used, such as, but not limited to, strontium titanates (STO) or magnesium oxide (MgO).The layer 620 of YBCO is formed on substrate 610, then replaces the layer 634 of NBCO and the layer 632 of YBCO.By way of example, assembly 600 can comprise the layer 620 of the YBCO being formed with 200nm thickness, ten (10) alternating layers 634,632 to NBCO and YBCO afterwards respectively, each thickness (namely the YBCO of NBCO and the 10nm of 10nm alternately) with 10nm of such alternating layer, is all formed on YBCO layer 620.Although otherwise do not illustrate, assembly 600 can comprise other layers, the extra play of such as cushioned material layer, additional or less right alternating layer, other ELR materials, additional or other substrate layers, other or the layer of different-thickness, etc.
In realizations more of the present invention, barrier material can be used substantially to encase above-mentioned various assemblys.Barrier material can be used to diffuse out assembly substantially to prevent the oxygen in the crystal structure of ELR material.In some implementations, substantially to encase this assembly on all surfaces that gold can be deposited to this assembly.Other barrier materials can be used, such as, but not limited to, silicon dioxide or tin indium oxide (ITO).In some implementations, the gold of 5-10nm is deposited on all surfaces of this assembly, but other thickness can be used.
Fig. 7 A-Z-7I-Z shows the test result obtained by the sample of the assembly of test LSGO substrate; Be subsequently on LSGO substrate with a axle orientation (such as, YBCO a axle upwards) YBCO of about 200nm that formed, be 10 alternating layers to the NBCO of about 10nm and the YBCO of about 10nm subsequently, existing layer formed in these layers with a axle orientation each; And be that the gold of about 8.5nm is as the barrier material encasing this sample subsequently.
The test result of Fig. 7 A-Z-7I-Z is included in as described below each and runs and under condition, and the resistance of sample is as the relevant portion of the curve chart of the function of temperature (with Kelvinometer).More specifically, this figure corresponds to the measured value of resistance in the temperature range of 180K-270K of sample.Before test result is described in further detail, the testing equipment that brief description provides and setting.
Double-sided belt is utilized to be arranged on pcb board by sample.Have 0.004 " the tinned wird of diameter be adhered to the top-gold surface of the sample with indium solder.The opposite end of these wires is adhered to the pad on pcb board.This assembly is positioned in refrigerator.Keithley 6221 current source provides the DC electric current by sample, and Keithley 2182a voltmeter is measured across the voltage drop of sample to provide the resistivity measurements (such as, R=((V+)-(V-))/2*I) of " δ pattern ").Thermal resistance equipment (" RTD ") is used for measuring tempeature.
For some test runs, sample is cooled to the temperature lower than the transition temperature of YBCO at first and is allowed to heating.For other test runs (with holding time and cooling agent, and he avoids the unnecessary thermal stress to sample), sample is only cooled to just be allowed to heating at below 160K.In any one situation, when heated sample, obtain the measured value of the voltage across sample, together with the measured value of the temperature of sample.By voltage measurement, determine the resistance of δ pattern, and be depicted as the relation of resistance versus temperature subsequently, or R (T) curve (being also sometimes referred to as R-T curve chart), corresponding to the test result shown in Fig. 7 A-Z-7I-Z.
According to carrying out the order of test run (namely, Fig. 7 A-Z corresponds to R (T) curve for the first test run, Fig. 7 B-Z corresponds to R (T) curve etc. for the second test run), Fig. 7 A-Z to 7H-Z corresponds to single R (T) curve of eight test runs of sample.Fig. 7 A-Z-7D-Z and 7H-Z corresponds to for wherein by R (T) curve of the test run of the sample of the DC current drives of 200nA.Fig. 7 E-Z-7G-Z corresponds to for wherein by R (T) curve of the test run of the sample of the DC current drives of 100nA.Except determining δ mode voltage coating-forming voltage measured value, do not use other smoothing, equalization or other data processings.
Fig. 7 I-Z corresponds in different test envelopes and under those the different condition of Fig. 7 A-Z-7H-Z, R (T) curve of the single test run of sample.Particularly, during this test run, adopt SR830 lock-in amplifier (LIA), and adopt the time constant of 1 second, at 24Hz this sample of AC current drives by 200nA.
As directed, all test runs are included in the one or more changes in each R (T) curve in the rough range of 210K-240K.It is consistent that these changes of R (T) slope of a curve are considered to enter with sample the part reducing resistance or ELR state.As understood, in arbitrary R (T) curve of YBCO or NBCO, do not observe similar change.
Realizations more of the present invention can comprise the alternating layer had than the above-mentioned thickness larger or less about Fig. 6-Z.In realizations more of the present invention, at least one deck of each layer in superlattice can be that an one, two, three or more structure cell is thick.In realizations more of the present invention, every one deck of each layer in the alternately right layer in superlattice can be that an one, two, three or more structure cell is thick.In realizations more of the present invention, the thickness of the one deck in a pair (or other groupings) alternating layer is different from the thickness of another layer of this centering.More of the present invention during realize, the layer thickness of a pair alternating layer in superlattice to be different from superlattice another to the layer thickness of alternating layer.As understood, other thickness can be used, to realize various operating characteristic as discussed in this.
Realizations more of the present invention can be included in the multiple Re atoms in individual layer, such as, relative to each other have the layer of multiple Re atoms of different size.Such as, ReBCO layer can have following lattice structure, wherein in every 5 Re atoms 4 be Y atom, and every Wuyuan is Dy atom.The layer of these types, comprising the two or more rare earth atoms in its crystal structure, because sequence effect, local lattice mismatch, additional vibration constant etc. can introduce additional strain power in assembly.
Realizations more of the present invention can comprise the Re atom of the oxidation state selection based on them.Such as, although Y and Nd has a kind of oxidation state (3 +), but element samarium (Sm), europium (Eu), erbium (Er), thulium (Tm) and ytterbium (Yb) can have 3 +with 2 +two kinds of oxidation state, and caesium (Ce) and terbium (Tb) can have 3 +with 4 +two kinds of oxidation state.As understood, other Re atoms with other oxidation state can be selected.In such an implementation, the Re atom in the ELR layer of assembly with variable oxidation state can contribute to fixed oxygen position and/or charge carrier defect in the hole of crystal structure or crystal structure, and/or more or less oxygen local quantity can be stablized in certain one deck, and other benefits.Such as, the ELR material layer in superlattice can comprise the most of Y atom as Re atom, and a small amount of Ce3 +atom and a small amount of Ce4 +atom for the oxygen/charge carrier defect controlled in such layer, etc.
During realize, the outermost layer of the ELR material in superlattice is formed the material layer (such as gold) with low-down affinity for oxygen more of the present invention, to reduce the speed of different layers of each layer that oxygen diffuses out or enters superlattice.During realize, all outmost surface of superlattice forms the material layer (such as gold) with low-down affinity for oxygen more of the present invention, to reduce the speed of different layers of each layer that oxygen diffuses out or enters superlattice.
In realizations more of the present invention, the strain expected can be introduced in material for the various manufacturing process creating the superlattice of ELR material layer.Such as, when when deposited on substrates ELR material layer, between depositional stage, change substrate temperature and/or partial pressure of oxygen can allow material to be deposited at its " nature " temperature, and time below material cooled to depositing temperature, inter alia, strain will be introduced.
Therefore, realizations more of the present invention can comprise superlattice, and in fact, inter alia, each layer in superlattice can play the effect making adjacent layer modification.In other words, one deck can correspond to ELR material wherein and itself, and material modified as another layer of ELR material, makes the layer in these superlattice form the ELR material of modification together.According to various realization of the present invention, the assembly of the various different layers of ELR material, change type, oxygen content, Re atomic type, orientation etc. and can provide enough strains to one or more layers of this assembly, make these layers show lower or extremely low resistance with in these layers or between carry electric current, and other benefits.
According to various realization of the present invention, no matter be used in body, cover in film or band, still otherwise (such as, wire, paper tinsel, nano wire etc.) use, as said, the assembly 100,200,300,400,500 and/or 600 in this part can be incorporated in various device and relevant device.Such as, these assemblys and/or these assemblys can be utilized to be incorporated into following equipment and system by following equipment and system: capacitor, inductor, transistor, conductor and conducting element, integrated circuit, antenna, filter, transducer, magnet, Medical Devices, power cable, energy storage device, transformer, electrical equipment, mobile device, computing equipment, information storing device and use time transmission electronic and/or other equipment of information and system.
Therefore, in some implementations, make modification ELR material described herein be formed and/or be integrated in various carrying current assembly, can and/or contribute to the ELR material of modification being implemented to utilization, generation, conversion and/or transmission of electric energy as in the equipment of electric current and system.More effectively work with system compared with traditional equipment, compare traditional equipment and more cost-effectively work with system, compare traditional equipment and system less works etc. lavishly, these equipment and system benefits are in the operating characteristic improved.
In some implementations, the assembly of material comprises the ground floor of the ELR material with crystal structure; And form the second layer of material on the first layer, this second layer apply strain ELR material crystal structure at least partially in.In some implementations, the second layer of material apply controlled strain ELR material crystal structure at least partially in.In some implementations, the second layer of material applies to strain in the position of the crystal structure of the ELR material comprising electric charge face.In some implementations, the second layer of material applies in the position of the crystal structure of the ELR material strained in the hole comprising crystal structure.
In some implementations, the assembly of conduction current, comprises the ground floor of the ELR material with cupric oxide electric charge face; And form the second layer of material on the first layer, this second layer introduce strain comprise cupric oxide electric charge face ELR material ground floor at least partially in.In some implementations, external strain is incorporated at least ground floor of ELR material by the second layer of material.In some implementations, the second layer of material causes internal strain at least ground floor of ELR material.In some implementations, in the ground floor of ELR material, the second layer of material causes the diffusion of oxygen atom.In some implementations, in the ground floor of ELR material, the second layer of material causes the diffusion gradient of oxygen atom.
In some implementations, assembly comprises the electric conducting material with crystal structure; With form material on the conductive material, in its part causing power to be applied to the crystal structure of electric conducting material or it is inner.In some implementations, electric conducting material is rare-earth oxidation copper product, and causes the power material be applied in the part of the crystal structure of electric conducting material to be the metal with high oxygen affinity.
In some implementations, assembly comprises an ELR material with crystal structure; With the 2nd ELR material be formed on an ELR material, the 2nd ELR material causes power in the part of the crystal structure of an ELR material.
In some implementations, assembly comprises an ELR material; And there is the 2nd ELR material of crystal structure, the 2nd ELR material is formed on an ELR material, and an ELR material causes power in the part of the crystal structure of the 2nd ELR material.
In some implementations, assembly comprises an ELR material with crystal structure; And there is the 2nd ELR material of crystal structure, 2nd ELR material is formed on an ELR material, 2nd ELR material causes power in the part of the crystal structure of an ELR material, and an ELR material causes power in the part of the crystal structure of the 2nd ELR material.
In some implementations, assembly comprises the ground floor of the ELR material with the first form; Have the second layer of the ELR material of the second form, wherein the second layer is formed on the first layer; And there is the third layer of ELR material of the first form, wherein third layer is formed on the second layer.
In some implementations, assembly comprises the ground floor of YBCO; With the multiple layers be formed on the top surface of YBCO, multiple layer comprises the multipair alternating layer of NBCO and YBCO.In some implementations, the thickness of the ground floor of YBCO is about 200 nanometers, and the thickness of every layer in multiple layer is about 10 nanometers.In some implementations, multiple layer comprises ten pairs of alternating layers of NBCO and YBCO.In some implementations, multiple layer comprises at least two pairs of alternating layers of NBCO and YBCO.
In some implementations, assembly is used for transmission current, and this assembly comprises multiple layer, and it comprises at least one pair of alternating layer of NBCO and YBCO.In some implementations, this group layer comprises at least ten pairs of alternating layers of NBCO and YBCO.In some implementations, substrate has the surface of a axle being basically perpendicular to this substrate; The layer of YBCO is applied to the surface of substrate, and the layer of YBCO has the surface of a axle being basically perpendicular to YBCO; And wherein this group layer is applied to the surface of YBCO.
In some implementations, assembly comprises the basic unit of YBCO, and this basic unit has the surface of the c-axis being basically parallel to YBCO; Be formed in the ground floor of the NBCO on the surface of the basic unit of YBCO, the ground floor of NBCO has the surface of the c-axis being basically parallel to NBCO; Be formed in the ground floor of the YBCO on the surface of the ground floor of NBCO, the ground floor of YBCO has the surface of the c-axis being basically parallel to YBCO; Be formed in the second layer of the NBCO on the surface of the ground floor of YBCO, the second layer of NBCO has the surface of the c-axis being basically parallel to NBCO; Be formed in the second layer of the YBCO on the surface of the second layer of NBCO, the second layer of YBCO has the surface of the c-axis being basically parallel to YBCO; Be formed in the third layer of the NBCO on the surface of the second layer of YBCO, the third layer of NBCO has the surface of the c-axis being basically parallel to NBCO; Be formed in the third layer of the YBCO on the surface of the third layer of NBCO, the third layer of YBCO has the surface of the c-axis being basically parallel to YBCO; Be formed in the 4th layer of the NBCO on the surface of the third layer of YBCO, the 4th layer of NBCO has the surface of the c-axis being basically parallel to NBCO; Be formed in the 4th layer of the YBCO on the surface of the 4th layer of NBCO, the 4th layer of YBCO has the surface of the c-axis being basically parallel to YBCO; Be formed in the layer 5 of the NBCO on the surface of the 4th layer of YBCO, the layer 5 of NBCO has the surface of the c-axis being basically parallel to NBCO; Be formed in the layer 5 of the YBCO on the surface of the layer 5 of NBCO, the layer 5 of YBCO has the surface of the c-axis being basically parallel to YBCO; Be formed in the layer 6 of the NBCO on the surface of the layer 5 of YBCO, the layer 6 of NBCO has the surface of the c-axis being basically parallel to NBCO; Be formed in the layer 6 of the YBCO on the surface of the layer 6 of NBCO, the layer 6 of YBCO has the surface of the c-axis being basically parallel to YBCO; Be formed in the layer 7 of the NBCO on the surface of the layer 6 of YBCO, the layer 7 of NBCO has the surface of the c-axis being basically parallel to NBCO; Be formed in the layer 7 of the YBCO on the surface of the layer 7 of NBCO, the layer 7 of YBCO has the surface of the c-axis being basically parallel to YBCO; Be formed in the 8th layer of the NBCO on the surface of the layer 7 of YBCO, the 8th layer of NBCO has the surface of the c-axis being basically parallel to NBCO; Be formed in the 8th layer of the YBCO on the surface of the 8th layer of NBCO, the 8th layer of YBCO has the surface of the c-axis being basically parallel to YBCO; Be formed in the 9th layer of the NBCO on the surface of the 8th layer of YBCO, the 9th layer of NBCO has the surface of the c-axis being basically parallel to NBCO; Be formed in the 9th layer of the YBCO on the surface of the 9th layer of NBCO, the 9th layer of YBCO has the surface of the c-axis being basically parallel to YBCO; Be formed in the tenth layer of the NBCO on the surface of the 9th layer of YBCO, the tenth layer of NBCO has the surface of the c-axis being basically parallel to NBCO; And being formed in the tenth layer of YBCO on the surface of the tenth layer of NBCO, the tenth layer of YBCO has the surface of the c-axis being basically parallel to YBCO.In some implementations, this assembly comprises the layer gold on the surface of the tenth layer that is formed in YBCO further.In some implementations, this assembly comprises the layer gold substantially encasing this assembly further.
that formed by ELR material and/or comprise the equipment of ELR material
Various equipment, application, assembly, device and/or system can adopt ELR material described here.These equipment, application, assembly, device and/or system is discussed in more detail in present chapters and sections below.
the nano wire of the 1st chapter-formed by ELR material
This chapter of specification relates to Fig. 1-36 and Figure 37-A to Figure 45 B-A; Therefore all reference markers be included in this part relate to the element found in these figures.
In various realization of the present invention, ELR material can be used formed the various nano wire and nanowire assemblies that will be discussed in further detail below.Therefore, in realizations more of the present invention, these ELR materials can be formed as various nanowire assemblies, make mainly along the b axle conduction current of ELR material.In these realize, as shown in Figure 39-A, the ELR material with the length with reference to b axle, the width with reference to c-axis and the degree of depth (or thickness) with reference to a axle can be formed, but as will be apparent from this specification, other coordinate system, orientation and configuration can be used for ELR material.Coordinate system shown in Figure 39-A will be used for discussion below.
In realizations more of the present invention, various ELR material can be used to form nano wire.In traditional term, nano wire has width or diameter to be tens nanometers or less magnitude and the general nanostructure without strain length.In realizations more of the present invention, various modification ELR material 1060 can be formed as having the width of 50 nanometers and/or the nano wire of the degree of depth.In realizations more of the present invention, various modification ELR material 1060 can be formed as having the width of 40 nanometers and/or the nano wire of the degree of depth.In realizations more of the present invention, various modification ELR material 1060 can be formed as having the width of 30 nanometers and/or the nano wire of the degree of depth.In realizations more of the present invention, various modification ELR material 1060 can be formed as having the width of 20 nanometers and/or the nano wire of the degree of depth.In realizations more of the present invention, various modification ELR material 1060 can be formed as having the width of 10 nanometers and/or the nano wire of the degree of depth.In realizations more of the present invention, various modification ELR material 1060 can be formed as having the width of 5 nanometers and/or the nano wire of the degree of depth.In realizations more of the present invention, various modification ELR material 1060 can be formed as having and be less than the width of 5 nanometers and/or the nano wire of the degree of depth.In realizations more of the present invention, the various new ELR material of design as mentioned above can be formed as having the width of 50 nanometers and/or the nano wire of the degree of depth.In realizations more of the present invention, the various new ELR material of design as mentioned above can be formed as having the width of 40 nanometers and/or the nano wire of the degree of depth.In realizations more of the present invention, the new ELR material of design as mentioned above can be formed as having the width of 30 nanometers and/or the nano wire of the degree of depth.In realizations more of the present invention, the various new ELR material of design as mentioned above can be formed as having the width of 20 nanometers and/or the nano wire of the degree of depth.In realizations more of the present invention, the various new ELR material of design as mentioned above can be formed as having the width of 10 nanometers and/or the nano wire of the degree of depth.In realizations more of the present invention, the various new ELR material of design as mentioned above can be formed as having the width of 5 nanometers and/or the nano wire of the degree of depth.In realizations more of the present invention, the various new ELR material of design as mentioned above can be formed as having and be less than the width of 5 nanometers and/or the nano wire of the degree of depth.
More of the present invention during realize, nano wire can be stacked on top of each other, has the buffering and/or substrate layer that are arranged between the two to form laminar nano line.Layout each nano wire in each layer can be formed by ELR material new as discussed above or modification ELR material 1060, and any width recited above and/or the degree of depth can be had.
In realizations more of the present invention, nano wire may be used for carrying electric charge from first end to the second end.Each of these ends can be connected to electric component, includes but not limited to another nano wire, wire, trace, lead-in wire, interconnection, electronic device, electronic circuit, semiconductor device, transistor, memristor, resistor, capacitor, inductor, MEMs device, pad, voltage source, current source, ground connection or other electric components.In realizations more of the present invention, via the ELR material of nano wire, nano wire can be coupled to and can couple directly to the one or more of these electric components.More of the present invention during realize, by the ELR material of another kind of type (that is, modification to unmodified ELR material, at the same gang of ELR material or of a sort ELR material etc.), nano wire can be coupled to these electric components indirectly.In realizations more of the present invention, by electric conducting material, include but not limited to, conducting metal, nano wire can be coupled to these electric components indirectly.
Figure 37-A show according to various realization of the present invention be parallel to c face and the cross section of exemplary ELR material 3700 by the center that is formed in the hole 3710 in ELR material 3700.In order to the object of discussion below and enforcement of the present invention, (namely ELR material 3700 corresponds to traditional ELR material, unmodified superconduction and/or HTS material (as, unmodified YBCO etc.)) and various modification ELR material 1060 and new ELR material, its various realization is described above.Figure 37-A shows the various holes 3710 through the ELR material 3700 comprising a axis hole 3710A, b axis hole 3710B and ab axis hole 3710C.A axis hole 3710A corresponds to the hole 3710 being basically parallel to a axle through ELR material 3700; B axis hole 3710B corresponds to the hole 3710 being basically parallel to b axle through ELR material 3700; Ab axis hole 3710C corresponds to the hole 3710 being basically parallel to each axle departed from (such as angle 3720) c face of a axle (or b axle) various angle through ELR material 3700.As understood, be not through ELR material 3700 porose 3710 to be all shown in Figure 37-A-for clarity sake and be convenient to the object that illustrates, not manyly to be illustrated.
As also understood, the crystal structure of ELR material 3700 will be depended in hole 3710.Such as, as shown in Figure 37-A, the ab axis hole 3710C of ELR material 3700 (corresponding to YBCO in this example) is present in the angle place departing from a axle +/-45 degree.By the mode of further example, Figure 38-A shows relative to the b axis hole 3710B in the ELR material 3700 of the ab axis hole 3710C in exemplary ELR material 3700.As understood, other ab axis hole 3710C may reside in other ELR material, be included in the additional ab axis hole 3710C at other angles (such as, +/-30 degree, +/-60 degree etc.) place.Similarly, as understood, although a axis hole 3710A and b axis hole 3710B is shown in ELR material 3700 orthogonal in Figure 37-A, other orientations in such hole 3700 can Existence dependency in the crystal structure of other ELR materials.
Traditional superconductor, comprises HTS material, shows usually relevant with this superconductor various phenomenons.As understood, except extremely low resistance, these superconducting material exhibits go out Meisser effect, and it does not show as obviously not or the electromagnetic field got rid of from superconductor inside.Meisser effect is considered to be in the result that superconductor inside forms eddy current or loop current.These eddy current are considered to produce magnetic field in superconductor inside, and end is got up, and is tending towards cancelling each other, thus in this inside obviously not or eliminating electromagnetic field.Control (or elimination) these eddy current can control the Meisser effect that (or elimination) is gone out by superconducting material exhibits.In other words, the clean cancellation that (or elimination) these eddy current can stop the magnetic field in superconductor inside is controlled.
When electric current in ELR material 3700 " loop is got back to " himself upper time, think and form eddy current in ELR material 3700.With reference now to current path 3730 (being current path 3730A, current path 3730B, current path 3730C, current path 3730D and current path 3730E shown in Figure 37-A), be described.As directed, when electric current flows through ELR material 3700, electric current can be advanced along the current path 3730A of passing hole 3710A.Electric current is advanced through hole 3710A until arrive the intersection point between each hole 3710 in ELR material 3700, i.e. intersection point 3740A.
At intersection point 3740, usually, think that electric current can from electric current " straight line " path deviation a hole 3710 to another path by different hole 3710.Such as, when arriving intersection point 3740A, electric current can continue flowing along the current path 3730A through hole 3710A or departs from current path 3730A in some way, such as along the current path 3730B through hole 3710B.As directed, electric current departs from 45 degree from its original path current path 3730A to current path 3730B.
After electric current deviates to current path 3730B from current path 3730A, electric current continues flowing along the current path 3730B through hole 3710C, until arrive intersection point 3740B.Further, this electric current can continue flowing along the current path 3730B through hole 3710C or departs from current path 3730B in some way, such as, along the current path 3730C through hole 3710B.As directed, electric current departs from 90 degree (deviations of two 45 degree) altogether from its original path.When electric current arrives other intersection points of such as intersection point 3740C and 3740D, this process can continue.At intersection point 3740C, electric current can deviate to the current path 3730D through hole 3710C from the current path 3730C through hole 3710B, and at intersection point 3740D, electric current can deviate to the current path 3730E through hole 3710A from the current path 3730D through hole 3710C.As directed, at current path 3730E, electric current departs from 180 degree (deviations of four 45 degree) altogether from its original path.As understood, although otherwise do not illustrate, this process can continue, until electric current along current path 3730A loop get back to it from it.
Figure 37-A shows the threshold depth (as shown in Figure 39-A, the degree of depth relates to a axle) that can exist for forming the ELR material 3700 needed for current circuit in ELR material 3700.More specifically, as shown in Figure 37-A, form current loop in ELR material 3700, the degree of depth being enough to the ELR material 3700 comprising five adjacent holes 3710B may be required.In other words, more less than the hole 3710B of this quantity hole can not provide the deviation of sufficient amount (or turnover) and subsequently for making electric current get back to path on himself at this threshold depth inner ring road of ELR material 3700.If the degree of depth of ELR material 3700 is less than this threshold depth, then possibly cannot forms loop current in ELR material 3700, thus prevent Meisser effect.Similarly, Figure 37-A shows the threshold length (as shown in Figure 39-A, length relates to b axle) that can exist for forming the ELR material 3700 needed for current circuit in ELR material 3700.More specifically, as inferred from Figure 37 A, form current loop in ELR material 3700, the length being enough to the ELR material 3700 comprising five adjacent holes 3710B may be required.If the length of ELR material 3700 is less than this threshold length, then possibly cannot forms loop current in ELR material 3700, thus prevent Meisser effect.As understood, for having other ELR materials from the different crystal structure shown in Figure 37-A, these threshold depth and/or length can be different, and different crystal structure wherein can be more or less hole, have the hole of different directions, the hole etc. at different deviation angle.
In addition, at each intersection point 3740, these threshold depth and/or length hypothesis electric current can depart from single turnover.In other words, suppose that electric current only departs from the increment (contrasting 90 degree or larger) of +/-45 degree at each intersection point 3740 place in the example shown.As understood, if if the deviation of larger increment can occur or in the position being different from intersection point 3740, deviation occurs, then threshold depth and/or threshold length that the ELR material 3700 of Meisser effect (or other superconducting phenomena) does not wherein occur may be less.Similarly, as understood, if only there is deviation at some intersection point 3740 (instead of all intersection points 3740) place, then threshold depth and/or threshold length that the ELR material 3700 of Meisser effect (or other superconducting phenomenon) does not wherein occur may be larger.But according to various realization of the present invention, ELR material 3700 has and forms threshold depth needed for loop current and/or threshold length.
According to various realization of the present invention, ELR material can be utilized to form nano wire, and wherein by controlling one or more dimensional parameters of nano wire, nano wire shows extremely low resistance, but do not show some other superconducting phenomenon (such as, Meisser effect).Such as, according to various realization of the present invention, the degree of depth of nano wire is selected to be less than the threshold depth forming the ELR material needed for loop current in ELR material.According to various realization of the present invention, the length of nano wire is selected to be less than the threshold length forming the ELR material needed for loop current in ELR material.According to various realization of the present invention, the degree of depth of nano wire and length can be less than those threshold values formed in ELR material needed for loop current.Then these nano wires can show as perfact conductor along its degree of depth and/or length and not show other superconducting phenomenon.In other words, according to various realization of the present invention, nano wire has threshold depth or threshold length (and in some implementations, and/or there are some ELR materials, possible threshold width), in this value, nano wire work is perfact conductor, and to exceed this nano wire work of this value be superconductor.Although discuss in the threshold depth and/or threshold length of ELR material 3700 above, will understand from Figure 37-A, and in fact need the threshold region of ELR material 3700 to form loop current in some cases.
In order to the object of this explanation, as understood, can along intended size multiple adjacent hole 3710, in multiple unit crystal of intended size or the unit measurement of other quantity relevant to the crystal structure of ELR material 3700, express these threshold values.As also understood, these threshold values can be expressed in measurement unit's (nanometer, dust etc.).
According to various realization of the present invention, nano wire as perfact conductor work can be formed by providing the ELR material 3700 of the random length of the degree of depth being no more than threshold depth as above.Similarly, according to various realization of the present invention, nano wire as perfact conductor work can be formed by the ELR material 3700 of any degree of depth providing the length being no more than threshold length as above.More specifically, according to various realization of the present invention, can be formed as perfact conductor work by providing the ELR material 3700A of the random length of the degree of depth being no more than threshold depth as above and not occur the nano wire of Meisser effect.Similarly, according to various realization of the present invention, can be formed as perfact conductor work by the ELR material 3700 of any degree of depth providing the length being no more than threshold length as above and not occur the nano wire of Meisser effect.
As understood, the orientation changing the ELR material in Figure 39 A will change the dependent thresholds size occurred needed for Meisser effect.Such as, as understood, if this ELR material directed makes a axle and c-axis exchange (that is, depth reference c-axis and wide reference a axle), then width and/or length will be dimensional parameters, to control to avoid Meisser effect.
As mentioned above, nano wire can be formed by ELR material 3700, it can comprise traditional ELR material (such as, unmodified YBCO etc.), the ELR material (YBCO etc. of such as ELR material 1060, chromium modification) of modification, new ELR material or other ELR materials.In addition, in realizations more of the present invention, as understood, nano wire can be formed by being deposited on substrate or padded coaming by ELR material 3700.More of the present invention during realize, as understood, nano wire can be formed by the substrate that ELR material 3700 adhered to such as circuit board.
In realizations more of the present invention, such as utilize the ELR material of modification (such as, modification ELR material 1060) those, nano wire can be formed and be operated on a certain temperature, wherein only a part for modification ELR material 1060 has the hole 310 kept at this certain temperature place, and this part of modification ELR material 1060 has the degree of depth being less than threshold depth, can form loop current on this threshold depth.Such as, a certain temperature place of only retaining hole 310A and 310B can be operated in wherein with reference to Figure 23, modification ELR material 1060.In this example, hole 310A and 310B can not correspond to is enough to form loop current in modification ELR material 1060 and the degree of depth that the modification ELR material 1060 of Meisser effect does not occur.
According to various realization of the present invention, nano wire can be used to form various electric component, include, but not limited to nano wire connector, nano wire contour (contour), nano wire coil and nano wire transducer.Figure 40-A shows the example of the nano wire connector 4000 according to various realization of the present invention.More specifically, Figure 40 A-A shows by comprising the nano wire connector 4000A formed with the nano wire of the ELR material with Figure 39-A and above-described similar mode orientation, and wherein the degree of depth of nano wire is less than the threshold depth formed in ELR material needed for loop current.Figure 40 B-A shows the nano wire connector 4000B formed by the nano wire of the ELR material comprising the mode orientation of exchanging with a axle and c-axis from Figure 39-A, and wherein the width of nano wire is less than the threshold width formed in ELR material needed for loop current.As understood, other nano wire connector 4000 can be formed by the nano wire of the ELR material comprising different orientation.More of the present invention during realize, nano wire connector 4000 comprises and is perfact conductor but the nano wire not showing the complete characteristic of superconductor.More of the present invention during realize, nano wire connector 4000 comprises and is perfact conductor but the nano wire not showing Meisser effect.In realizations more of the present invention, nano wire connector 4000 comprises the nano wire formed by traditional HTS material with controlled dimensional parameters, makes nano wire work be perfact conductor, but does not show Meisser effect.In realizations more of the present invention, nano wire connector 4000 comprises the nano wire formed by the modification ELR material 1060 with controlled dimensional parameters, makes nano wire work be perfact conductor, but does not show Meisser effect.In realizations more of the present invention, nano wire connector 4000 comprises the nano wire formed by the new ELR material with controlled dimensional parameters, makes nano wire work be perfact conductor, but does not show Meisser effect.As understood, nano wire connector 4000 can be used an electric component to be connected to another electric component (otherwise not illustrating).
Figure 41-A shows the various single nano wire contour 4100 that can be formed by single nano wire or nanowire segment according to various realization of the present invention.In realizations more of the present invention, nano wire contour 4100A comprises three nanowire segment 4110, i.e. nanowire segment 4110A, nanowire segment 4110B and nanowire segment 4110C.In realizations more of the present invention, nano wire contour 4100B comprises four nanowire segment 4110, i.e. nanowire segment 4110A, nanowire segment 4110B, nanowire segment 4110C and nanowire segment 4110D.In realizations more of the present invention, nano wire contour 4100C comprises five section 4110, i.e. nanowire segment 4110A, nanowire segment 4110B, nanowire segment 4110C, nanowire segment 4110D and nanowire segment 4110E.The difference of nano wire contour 4100C and nano wire contour 4100B is the position of a pair week thread end.As understood, other positions being used for all thread ends can be used in these or other nano wire contour 4100.In realizations more of the present invention, nano wire contour 4100D comprises N number of nanowire segment 4110, i.e. nanowire segment 4110A, nanowire segment 4110B, nanowire segment 4110C, & and nanowire segment 4110N.More of the present invention during realize, by the ELR material of nano wire, the single nanowire segment 4110 of nano wire contour 4100 can direct-coupling each other.In realizations more of the present invention, by including but not limited to the electric conducting material of conducting metal, single nanowire segment 4110 can ground connection coupling to each other.The lead-in wire of nano wire contour 4100 (otherwise not illustrating) can be formed by maybe can't help nano wire.As understood, nano wire contour 4100 may be used for various application, and can depend on such as such application and be formed as various shape and size.Such as, as understood, nano wire contour 4100 may be used for forming so-called " current circuit ", and it has the various application relating to sensing and/or produce electric field.
Figure 42-A shows the exemplary nano line coil 4200 that can be formed by one or more independent nano wire contour 4100 according to various realization of the present invention.Independent nano wire contour 4100 can pass through substrate or padded coaming is separated from one another and coupled to each other by such as coupler 4210.As directed, form nano wire coil 4200 by nano wire contour 4100V, nano wire contour 4100W, nano wire contour 4100X, nano wire contour 4100Y and nano wire contour 4100Z.As understood, although Figure 42-A is depicted as comprise five nano wire contours 4100, nano wire coil 4200 can comprise the nano wire contour 4100 of any amount.But also as shown in Figure 42-A, nano wire coil 4200 is configured to the electric current being conducted through each nano wire contour 4100 in identical general direction (such as, clockwise or counterclockwise).As understood, nano wire coil 4200 may be used for various application, and can depend on such as such application and be formed as various shape and size.
Figure 43-A shows difference (differential) the nano wire coil 4300 that can be formed by one or more pairs of nano wire contour 4100 according to various realization of the present invention.As shown in Figure 43-A, nano wire coil 4300 is formed by two pairs of nano wire contours: the first couple comprising nano wire contour 4100P and nano wire contour 4100Q; And comprise the second couple of nano wire contour 4100R and nano wire contour 4100S.Although Figure 43-A is depicted as comprise two pairs of nano wire contours 4100, the right of any amount can be used in various realization of the present invention.In addition, in realizations more of the present invention, as understood, except one or more pairs of nano wire contour 4100, nano wire coil 4300 can comprise single nano wire contour 4100.Nano wire contour 4100 in often pair of nano wire contour 4100 (such as, by coupler 4210) coupled to each other, makes their conduction currents in different directions from each other.Such as, as shown in Figure 43-A, nano wire contour 4100P conduction current on the direction different from nano wire contour 4100Q (that is, one can conduction current clockwise, and another counterclockwise conduction current).This is equally applicable to nano wire contour 4100R and nano wire contour 4100S.As understood, nano wire coil 4300 may be used for various application, and can depend on such as such application and be formed as various shape and size.
Figure 44-A shows the nano wire coil 4400 that can be formed by one or more concentric nano wire contour 4100 according to various realization of the present invention.As shown in Figure 44-A, form nano wire coil 4400 by five nanowire mesh contours 4100, comprise nano wire contour 4100J, nano wire contour 4100K, nano wire contour 4100-L, nano wire contour 4100M and nano wire contour N.Although Figure 44-A is depicted as comprise five nano wire contours 4100, the nano wire contour 4100 of any amount can be used in various realization of the present invention.As shown in Figure 44-A, nano wire contour 4100 be concentrically with respect to one another and the size of continuous print nano wire contour 4100 reduce.Such as, nano wire contour 4100K is adapted at nano wire contour 4100J inside and is less than nano wire contour 4100J.Similarly, nano wire contour 4100L is adapted at nano wire contour 4100K inside and is less than nano wire contour 4100K; Nano wire contour 4100M is adapted at nano wire contour 4100-L inside and is less than nano wire contour 4100-L; And nano wire contour 4100N is adapted at nano wire contour 4100M inside and is less than nano wire contour 4100M.As shown in Figure 44-A, nano wire contour 4100 is coupled to each other, to form such as " spiral " nano wire coil 4400.As understood, nano wire coil 4400 may be used for various application, and can be formed as various shape and size.And nano wire coil 4200 and nano wire coil 4300 can be considered to be in essence three-dimensional (namely, nano wire contour 4100 in each is each other " stacking "), nano wire coil 4400 can be considered to be two-dimentional (namely not having the stacking of nano wire contour 4100) in essence.
Figure 45 A-A and 45B-A shows the various nano wire transducers 4500 according to various realization of the present invention, and it may be used for energy to be converted to another kind of form of energy from a kind of form of energy.Such as, the nano wire transducer 4500A comprising at least two nanowire segment 4110 being configured to dipole may be used for electromagnetic radiation to be converted to alternating voltage (such as, the V appeared at across its end rms).In such pattern, nano wire transducer 4500A can be counted as receiver (such as, receive or otherwise in response to electromagnetic radiation).On the contrary, nano wire transducer 4500A may be used for converting the alternating voltage appeared at across its end to electromagnetic radiation.In such pattern, nano wire transducer 4500A can be considered to reflector (that is, send or otherwise transmit electromagnetic radiation).
By the mode of another example, the nano wire transducer 4500B comprising nano wire contour 4100 (and it also can be considered to nano wire coil 4100) may be used for sensing the variable-current carried by conductor 4510.More specifically, according to well-known physics principle, the electric current carried by conductor 4510 generates an electromagnetic field, and produces the electric current of the end by nano wire transducer 4500B according to this.On the contrary, the variable-current being applied to the end of nano wire transducer 4500B may be used for inducing electric current in conductor 4510.Electromagnetic field is induced, according to inducing electric current than in conductor 4510 by the variable-current of the end of nano wire transducer 4500B.
By the mode of further example, comprise the nano wire transducer 4500C of nano wire coil 4200, can be used for sensing the variable-current carried in conductor 4510.More specifically, according to well-known physics principle, the electric current carried by conductor 4510 generates an electromagnetic field, and produces the electric current of the end by nano wire transducer 4500C according to this.On the contrary, the variable-current being applied to the end of nano wire transducer 4500C may be used for inducing electric current in conductor 4510.Further, induce electromagnetic field in the loop of nano wire transducer 4500C by the variable-current of the end of nano wire transducer 4500C, in conductor 4510, induce electric current according to this.
By the mode of further example again, the nano wire transducer 4500D comprising nano wire coil 4400 may be used for sensing the variable-current carried in conductor 4510.More specifically, according to well-known physics principle, the electric current carried by conductor 4510 is generated an electromagnetic field, and produces the electric current of the end by nano wire transducer 4500D according to this.On the contrary, the variable-current being applied to the end of nano wire transducer 4500D may be used for inducing electric current in conductor 4510.Further, induce electromagnetic field in the loop of nano wire transducer 4500C by the variable-current of the end of nano wire transducer 4500D, in conductor 4510, induce electric current according to this.
As understood, with reference to Figure 45-A, in various realization of the present invention discussed above, conductor 4510 will be optional.In fact, be present in the electromagnetic field of any change in " loop " of nano wire transducer 4500, no matter from conductor 4510 or other modes, all produce the electric current of the end by nano wire transducer 4500.Similarly, generate an electromagnetic field in the loop of nano wire transducer 4500 by the variable-current of the end of nano wire transducer 4500.As understood, due to the field change in the loop of nano wire transducer 4500, the change in location relative to field nano wire transducer 4500, the change in location relative to conductor 4510 nano wire transducer 4500 and/or as also understood the change of electric current carried by conductor 4510, relating to above-mentioned " electromagnetic field of change " may occur.
In some implementations, the nano wire comprising modification ELR material can describe as follows:
A kind of nano wire, comprises the ELR material of modification.
A kind of nano wire, comprises the ELR material of multilayer modification, and every layer of described multilayer ELR material is separated with another layer in multilayer by buffering or backing material.
A kind of electrical system, comprising: the first nano wire, comprises the ELR material of modification; With the second nano wire, comprise non-ELR material, wherein the first nano wire is electrically coupled to the second nano wire.
A kind of ELR nano wire, comprising: the ELR material with the three-dimensional parameter comprising length, width and the degree of depth, at least one wherein in dimensional parameter is less than threshold value, makes when not showing at least one superconducting phenomenon with ELR nano wire during extremely low resistance performance.
A kind of ELR nano wire, comprising: the ELR material with the three-dimensional parameter comprising length, width and the degree of depth; And it is material modified to be arranged on the suitable surface of ELR material, at least one wherein in dimensional parameter is less than threshold value, makes when not showing at least one superconducting phenomenon with ELR nano wire during extremely low resistance performance.
A kind of ELR nano wire contour, comprise: at least one ELR nanowire segment, each ELR nanowire segment comprises: the ELR material with the three-dimensional parameter comprising length, width and the degree of depth, at least one of wherein dimensional parameter is less than threshold value, makes when not showing at least one superconducting phenomenon with ELR nanowire segment during extremely low resistance performance.
A kind of ELR nano wire contour, comprise: multiple ELR nanowire segment, each of multiple ELR nanowire segment comprises the ELR material with the three-dimensional parameter comprising length, width and the degree of depth, what be arranged on the suitable surface of ELR material is material modified, at least one wherein in dimensional parameter is less than threshold value, makes when not showing at least one superconducting phenomenon with ELR nanowire segment during extremely low resistance performance.
A kind of ELR nano wire coil, comprise: at least one ELR nano wire contour, each at least one ELR nano wire contour comprises multiple ELR nanowire segment, each in multiple ELR nanowire segment be coupled to multiple ELR nanowire segment at least another to basically form polygon, each of at least one ELR nanowire segment comprises: the ELR material with the three-dimensional parameter comprising length, width and the degree of depth, at least one of wherein dimensional parameter is less than threshold value, makes when not showing at least one superconducting phenomenon with ELR nanowire segment during extremely low resistance performance.
A kind of ELR nano wire coil, comprise: multiple ELR nano wire contour, each of multiple ELR nano wire contour comprises multiple ELR nanowire segment, each of multiple ELR nanowire segment be coupled to multiple ELR nanowire segment at least another to basically form polygon, each of multiple ELR nanowire segment comprises: have and comprise length, the ELR material of the three-dimensional parameter of width and the degree of depth, what be arranged on the suitable surface of ELR material is material modified, at least one of wherein dimensional parameter is less than threshold value, make when not showing at least one superconducting phenomenon with ELR nanowire segment during extremely low resistance performance.
A kind of nano wire transducer, comprising: at least one nanowire segment, wherein nano wire transducer or sense electromagnetic field or induce electromagnetic field.
A kind of nano wire transducer, comprising: at least one nanowire segment being arranged in elect magnetic field, and wherein nano wire transducer senses electromagnetic field and is converted into alternating voltage.
A kind of nano wire transducer, comprising: at least one nanowire segment being electrically coupled to alternate voltage source, wherein in response to alternate voltage source, described nano wire transducer induces electromagnetic field.
the Josephson junction of the 2nd chapter-formed by ELR material
This chapter of specification relates to Fig. 1-36 and Figure 37-A to Figure 46 J; Therefore all reference markers be included in this part relate to the element found in these figures.
Figure 46 A-A to 46H-A shows and (is depicted as the Josephson junction 4600A in Figure 46 A-A in the drawings according to the various Josephson junctions 4600 of one or more realization of the present invention, Josephson junction 4600B in Figure 46 B-A, Josephson junction 4600C in Figure 46 C-A, Josephson junction 4600D in Figure 46 D-A, Josephson junction 4600E in Figure 46 E-A, Josephson junction 4600F in Figure 46 F-A, Josephson junction 4600G in Figure 46 G-A and the Josephson junction 4600H in Figure 46 H-A).Figure 46 A-A shows Josephson junction 4600A, and it comprises two the ELR conductors 4620 separated by barrier (barrier) 4610.In realizations more of the present invention, each ELR conductor 4620 comprises with the ELR material of the operating characteristic work of the improvement according to the various realization of the present invention.Such as, in realizations more of the present invention, each ELR conductor 4620 comprises modification ELR material 1060; And in realizations more of the present invention, each ELR conductor 4620 comprises the new ELR material of the operating characteristic with improvement.In realizations more of the present invention, each ELR conductor 4620 comprises the nanowire segment 4110 according to various realization of the present invention.
More of the present invention during realize, barrier 4610 comprises and is arranged between ELR conductor 4620 and is electrically coupled to the insulating material of ELR conductor 4620.In these realize, as understood, barrier 4610 will be very thin, be generally 30 dusts or less.In realizations more of the present invention, barrier 4610 comprises the electric conducting material be arranged between ELR conductor 4620, as conducting metal.In realizations more of the present invention, barrier 4610 comprises the electric conducting material be arranged between ELR conductor 4620, as feeromagnetic metal.In these realize, as understood, barrier 4610 can be thicker than insulating material, usual several micron thickness.In realizations more of the present invention, barrier 4610 comprises the semiconductive material be arranged between ELR conductor 4620, as conducting metal.In realizations more of the present invention, barrier 4610 comprises other materials, such as but not limited to, the ELR material different from ELR conductor 4620 (namely, in the sense, this difference can have different chemical compositions, different crystal structures, different crystal structure orientations, different phases, different crystal boundaries, different critical currents, different critical temperatures or other difference).In realizations more of the present invention, barrier 4610 comprises the ELR material identical with ELR conductor 4620, but there is one or more mechanical aspects difference (that is, the thickness of ELR material is different from ELR conductor 4620, the width of ELR material is different from ELR conductor 4620 or other mechanical differences) in some sense.In some implementations, barrier 4610 comprises the partial or complete gap be formed between ELR conductor 4620.In these realize, barrier 4610 can comprise the gap of filling with air or other gas.Comprise in realizations more of the present invention of modification ELR material 1020 at ELR conductor 4620, barrier 4610 can comprise unmodified ELR material 360.
Traditional Josephson junction of universal class comprises: superconductor-insulator-superconductor (" SIS "); Effects of Superconducting-normal-superconductor (" SNS "); Superconductor-feeromagnetic metal-superconductor (" SFS "); Superconductor-insulator-normal conductor-insulator-superconductor (" SINIS "); Superconductor-insulator-normal conductor-superconductor (" SINS "); Superconductor-constrictor-superconductor (" SCS "); And other.Figure 46 I-A shows the various examples of these Josephson junctions, includes but not limited to (from left to right, top-down): tunnel junction (SIS); Point cantact; Daydem bridge (SCS); Sandwich knot; The bridge of variable thickness; With ion implantation bridge.Figure 46 J-A shows other examples various of Josephson junction, includes but not limited to (from left to right, top-down): step edge SNS ties; Step edge Grain-boundary Junctions; Gradual edge junction; And bicrystal Grain-boundary Junctions.According to various realization of the present invention, replace the superconductor of traditional Josephson junction, all as discussed above ELR materials that those improve can be used to configure any one of the Josephson junction of these aforementioned type.
Generally speaking, Josephson junction 4600 shows so-called Josephson effect, the electric current wherein flowing through ELR conductor 4620 in ELR state can also flow through the knot between ELR conductor 4620 in the low resistance state of pole, and wherein this knot can comprise such as barrier 4610.The electric current flowing through barrier 4610 is called as josephson current.Rise until reach critical current, josephson current can flow through and have extremely low-resistance barrier 4610.But, when exceeding the critical current of barrier 4610, there is voltage across barrier 4610, reducing critical current further according to this, thus produce the larger voltage crossing over barrier 4610.As understood, the josephson effect of Josephson junction 4600 can be utilized in various circuit.
Figure 46 A-A shows the various realizations of the Josephson junction 4600A in " conductor structure ", and includes, but not limited to body material conductor, wire, nano wire, trace and other configurations as will be appreciated.
Figure 46 B-A shows the Josephson junction 4600B in " foil construction " or " plate structure ", and includes, but not limited to body plate of material according to various realization of the present invention, paper tinsel or other layer structures as will be appreciated.Such as, Josephson junction 4600B can be used detect the photon on that is incident on ELR conductor 4620.As understood, there are other purposes of Josephson junction 4600B.
Figure 46 C-A and Figure 46 D-A shows the Josephson junction 4600 in so-called " conductor structure ".Figure 46 C-A shows the Josephson junction 4600C comprising ELR conductor 4620, and this ELR conductor 4620 comprises the modification ELR material that various realization according to the present invention improves operating characteristic.As shown in Figure 46 C-A, more of the present invention during realize, each ELR conductor 4620 in Josephson junction 4600C comprises modification ELR material, and this modification ELR material comprises and is laminated to material modified 2720 on ELR material 3110.In realizations more of the present invention, modification ELR material layer can be pressed onto on substrate 2420 and (that is, ELR material layer be pressed onto on substrate 2420).As understood, ELR conductor 4620 can comprise other forms of modification ELR material.As directed, barrier 4610 to be arranged between ELR conductor 4620 and to be electrically coupled to ELR conductor 4620.
Figure 46 D-A shows the Josephson junction 4600D comprising ELR conductor 4620, and ELR conductor 4620 comprises the modification ELR material having and improve operating characteristic according to the various realization of the present invention.As shown in Figure 46 D-A, more of the present invention during realize, each ELR conductor 4620 of Josephson junction 4600D comprises modification ELR material, and this modification ELR material comprises and is laminated to material modified 2720 on ELR material 3110.In realizations more of the present invention, modification ELR material layer can be pressed onto on substrate 2420 and (that is, ELR material layer be pressed onto on substrate 2420).As understood, ELR conductor 4620 can comprise other forms of modification ELR material.As directed, barrier 4610 to be arranged between ELR conductor 4620 and to be electrically coupled to ELR conductor 4620, and more specifically barrier 4610 is arranged between the layer of ELR material 3110, and below the pantostrat of material modified 2720.Such as, as understood, from the angle of manufacture exceeding Josephson junction 4600C, Josephson junction 4600D expects.In realizations more of the present invention, such as, but not limited to, those shown in Figure 46 C-A and Figure 46 D-A, barrier 4610 can comprise material modified 2720.
Figure 46 E-A shows the Josephson junction 4600E comprising ELR conductor 4620, and ELR conductor 4620 comprises the modification ELR material that various realization according to the present invention improves operating characteristic.As shown in Figure 46 E-A, more of the present invention during realize, each ELR conductor 4620 of Josephson junction 4600E comprises modification ELR material, and this modification ELR material comprises and is laminated to material modified 2720 on ELR material 3110.As shown in Figure 46 E-A, be formed in the layer of material modified 2720 on the pantostrat of ELR material 3110 by interrupting (such as, gap) barrier 4610.Can by various treatment technology comprise etching, milling, shadow mask or as will be appreciated other treatment technologies form this gap in the layer of material modified 2720.Then Josephson junction 4600E is formed by two ELR conductors 4620, this ELR conductor 4620 comprises the layer that comprises ELR material 3110 and does not have material modified 2720 (namely, the layer of unmodified ELR material 3110) the modification ELR material (layers of such as, on ELR material 3110 material modified 2720) that separates of barrier 4610.Such as, as understood, from the angle of manufacture exceeding other Josephson junctions, Josephson junction 4600E expects.
Figure 46 F-A shows the Josephson junction 4600F comprising ELR conductor 4620, and this ELR conductor 4620 comprises the modification ELR material that various realization according to the present invention improves operating characteristic.As shown in Figure 46 F-A, more of the present invention during realize, each ELR conductor 4620 of Josephson junction 4600F comprises modification ELR material, and this modification ELR material comprises and is laminated to material modified 2720 on ELR material 3110.The same with Josephson junction 4600E, the barrier 4610 of Josephson junction 4600F is formed by the gap in the layer of material modified 2720 on the pantostrat of ELR material 3110.Therefore, two ELR conductors 4620 also by comprising modification ELR material form Josephson junction 4600F, separate modification ELR material by the barrier 4610 comprising unmodified ELR material 3110.In realizations more of the present invention, can by insulation or padded coaming 4630 be pressed on material modified 2720 layer by layer, and as shown in Figure 46 F-A, such material 4630 can gap in the layer of filling-modified material 2720, thus provides the further aspect of barrier 4610.
Figure 46 G-A shows the Josephson junction 4600G comprising ELR conductor 4620, and this ELR conductor 4620 comprises the modification ELR material that various realization according to the present invention improves operating characteristic.As shown in Figure 46 G-A, more of the present invention during realize, each ELR conductor 4620 of Josephson junction 4600G comprises modification ELR material, and this modification ELR material comprises and is laminated to material modified 2720 on ELR material 3110.The same with Josephson junction 4600E and 4600F, the barrier 4610 of Josephson junction 4600G is formed by the gap in the layer of material modified 2720 on the layer of ELR material 3110.In addition, the barrier 4610 of Josephson junction 4600G also comprises portion gap in the layer of ELR material 3110 (that is, the Mechanical Contraction in the degree of depth or thickness).Such as, the treatment technology for creating gap in the layer of material modified 2720 can be had a mind to or by mistake in the bottom of ELR material 3110, set up portion gap.Therefore, form Josephson junction 4600G by two the ELR conductors 4620 comprising modification ELR material, separate this modification ELR material by the barrier 4610 comprising the unmodified ELR material 3110 with further Mechanical Contraction.In realizations more of the present invention, can on material modified 2720 lamination insulation or the layer of padded coaming 4630, and as shown in Figure 46 G-A, such material 4630 can gap in the layer of filling-modified material 2720, and the portion gap in the layer of ELR material 3110, thus provide the further aspect of barrier 4610.
Figure 46 H-A shows the Josephson junction 4600H comprising ELR conductor 4620, and ELR conductor 4620 comprises the modification ELR material that various realization according to the present invention improves operating characteristic.As shown in Figure 46 H-A, more of the present invention during realize, each ELR conductor 4620 of Josephson junction 4600H comprises modification ELR material, and this modification ELR material comprises and is laminated to material modified 2720 on ELR material 3110.As above, the barrier 4610 of Josephson junction 4600H is formed by the gap in both layers of the layer of material modified 2720 and ELR material 3110.Therefore, Josephson junction 4600H is formed by comprising by two ELR conductors 4620 of the modification ELR material of this gaps.More of the present invention during realize, can on material modified 2720 lamination insulation or the layer of padded coaming 4630A, and as shown in Figure 46 H-A, such material 4630 can gap in the layer of filling-modified material 2720 and both layers of ELR material 3110.
In realizations more of the present invention, as understood, multiple Josephson junction 4600 can be organized into the one-dimensional array of series coupled Josephson junction 4600.In realizations more of the present invention, as understood, multiple Josephson junction 4600 can be organized into the two-dimensional array of Josephson junction, it will comprise multiple one-dimensional arraies of the series coupled Josephson junction 4600 of coupling parallel to each other.
In some implementations, the Josephson junction comprising modification ELR material can describe as follows:
A kind of Josephson junction, comprising: an ELR conductor, comprises the ELR material of the operating characteristic with improvement; 2nd ELR conductor, comprises ELR material; And the barrier material be arranged between an ELR conductor and the 2nd ELR conductor.
A kind of Josephson junction, comprising: an ELR conductor, comprises the ELR material of the critical temperature had higher than 150K; 2nd ELR conductor, comprises ELR material; And the barrier material be arranged between an ELR conductor and the 2nd ELR conductor.
A kind of circuit, comprise: multiple Josephson junction, each wherein in multiple Joseph knot comprises: an ELR conductor, comprise the ELR material of the critical temperature had higher than 150K, 2nd ELR conductor, comprise ELR material, and be arranged in the barrier material between an ELR conductor and the 2nd ELR conductor.
A kind of Josephson junction, comprising: the first conductor ELR, comprises modification ELR material; 2nd ELR conductor, comprises modification ELR material; And the barrier material be arranged between an ELR conductor and the 2nd ELR conductor, wherein modification ELR material comprises the ground floor of ELR material and is bonded to the material modified second layer of ground floor ELR material, and wherein modification ELR material has the operating characteristic of those the improvement exceeding independent ELR material.
A kind of Josephson junction, comprising: an ELR conductor, comprises modification ELR material; 2nd ELR conductor, comprises modification ELR material; And the barrier material be arranged between an ELR conductor and the 2nd ELR conductor, wherein modification ELR material comprises the ground floor of ELR material and is bonded to the material modified second layer of ground floor ELR material, and wherein modification ELR material has the critical temperature higher than 150K.
A kind of circuit, comprises multiple Josephson junction, and wherein multiple each of Joseph's knot comprises an ELR conductor, comprises modification ELR material; 2nd ELR conductor, comprises modification ELR material; And the barrier material be arranged between an ELR conductor and the 2nd ELR conductor, wherein modification ELR material comprises the ground floor of ELR material and is bonded to the material modified second layer of ground floor ELR material, and wherein modification ELR material has the critical temperature higher than 150K.
A kind of Josephson junction, comprising: the ground floor of ELR material, and be bonded to the material modified second layer of ground floor of ELR material, the second layer has Part I and Part II, be formed with gap between the first and second and on the ground floor of ELR material, the Part I being wherein bonded to the material modified second layer of ground floor ELR material forms the Part I of modification ELR material, the Part II being wherein bonded to the material modified second layer of ground floor ELR material forms the Part II of modification ELR material, and the gap wherein in the material modified second layer provides the unaltered portion of ELR material, wherein the unaltered portion of ELR material forms the barrier of Josephson junction, wherein modification ELR material has the operating characteristic of those the improvement exceeding independent ELR material.
A kind of Josephson junction, comprising: the ground floor of ELR material, with the material modified second layer being bonded to ground floor ELR material, the second layer has Part I and Part II, be formed with gap between the first and second and on the ground floor of ELR material, the Part I being wherein bonded to the material modified second layer of ground floor ELR material forms the Part I of modification ELR material, the Part II being wherein bonded to the material modified second layer of ground floor ELR material forms the Part II of modification ELR material, and the gap wherein in the material modified second layer provides the unaltered portion of ELR material, wherein the unaltered portion of ELR material forms the barrier of Josephson junction, wherein at the temperature place higher than 150K, modification ELR material is operated in ELR state.
A kind of circuit, comprising: the ground floor of ELR material, with the material modified second layer being bonded to ground floor ELR material, the second layer has material modified multiple parts, gap is formed between every a pair of adjacent part in material modified multiple parts, each ground floor being bonded to ELR material in wherein material modified multiple parts, to form the part of modification ELR material, and the gap formed between every a pair of the adjacent part wherein in material modified multiple parts provides the unaltered portion of ELR material, wherein the unaltered portion of ELR material forms the barrier of Josephson junction, wherein at the temperature place higher than 150K, modification ELR material is operated in ELR state.
A kind of Josephson junction, comprising: an ELR wire, comprises the ELR material of the critical temperature had higher than 150K; 2nd ELR wire, comprises ELR material; And the barrier material be arranged between an ELR wire and the 2nd ELR wire.
A kind of Josephson junction, comprising: an ELR paper tinsel, comprises the ELR material of the critical temperature had higher than 150K; 2nd ELR paper tinsel, comprises ELR material; And the barrier material be arranged between an ELR paper tinsel and the 2nd ELR paper tinsel.
the QUIDS of the 3rd chapter-formed by ELR material
This chapter of specification relates to Fig. 1-36 and Figure 37-A to Figure 53-A; Therefore all reference markers be included in this part relate to the element found in the drawings.
Figure 47-A shows the ELRQUID4700 (that is, ELR quantum interference device) comprising the ELR loop 4710 with single ELR Josephson junction 4600 according to various realization of the present invention.More specifically, ELR loop 4710 comprises the ELR conductor 4620 being formed as loop, has the single barrier 4610 be arranged in the branch of loop, to form ELR Josephson junction 4600.ELRQUID4700 is usually operated at the mode similar with other quantum interference devices comprising superconducting quantum interference device or " SQUID ".Operation and the use of SQUID are normally known.As understood, ELRQUID4700 can be called as " unijunction QUID ", " a knot QUID " or " RFQUID " sometimes.ELRQUID4700 is formed by with the ELR material of the operating characteristic work of the improvement of various realization according to the present invention.Such as, in realizations more of the present invention, ELRQUID4700A comprises modification ELR material 1060; In realizations more of the present invention, ELRQUID4700 comprises the ELR material with holes of the operating characteristic with improvement; And in realizations more of the present invention, ELRQUID4700 comprises the new ELR material according to various realization of the present invention.
Usually, as understood, the ELRQUID4700 referred to may be used for the magnetic field (that is, perpendicular to also passing the interior zone formed by ELR loop 4710) of detection flows through ELR loop 4710.More specifically, ELRQUID4700 can be coupled to the RF generator inducing electric current in ELR loop 4710.Such RF generator, is also sometimes referred to as AC biasing circuit 5000, has been shown in Figure 50-A.AC biasing circuit 5000 utilizes the AC electric current 5020 by inductance 5010, to produce RF field, induces electric current according to this in the ELR loop 4710 of ELRQUID4700.In various realization of the present invention, the electric current (it can control via the electric current 5020 flowing through inductor 5010) in ELR loop 4710 is maintained at or the critical current of barrier 4610 a little less than the Josephson junction 4600 in ELRQUID4700.As understood, the magnetic field flowing through the interior zone of ELR loop 4710 will cause the electric current in ELR loop 4710 to exceed the critical current of barrier 4610, produce the voltage of the leap barrier 4610 that can be detected and/or measure thus.
Figure 48 A-A shows duplex feeding ELRQUID4800, usually, and more specifically, and duplex feeding ELRQUID4800A.According to various realization of the present invention, ELRQUID4800A comprises the ELR loop 4710 and two loops 4810 (according to the current direction by ELRQUID4800A, sometimes referred to as input loop 4810A and output loop 4810) with single ELR Josephson junction 4600.Loop 4810 is arranged in ELR loop 4710 symmetrically, to guarantee that by the electric current in each branch of ELR loop 4710 be equal.Similarly, ELR loop 4710 is sometimes referred to as symmetrical ELR loop.
The ELR loop 4710 of ELRQUID4800A comprises the ELR conductor 4620 being formed as loop, has the single barrier 4610 be arranged in the branch of loop, to form ELR Josephson junction 4600.ELRQUID4800 can be formed with the ELR material of operating characteristic work improved by various realization according to the present invention.Such as, in realizations more of the present invention, ELRQUID4800 comprises modification ELR material 1060; In realizations more of the present invention, ELRQUID4800 comprises the ELR material with holes of the operating characteristic with improvement; And in realizations more of the present invention, ELRQUID4800 comprises the new ELR material according to various realization of the present invention.
Figure 48 B-A shows the duplex feeding ELRQUID4800B according to various realization of the present invention.ELRQUID4800B is different from ELRQUID4800A, because loop 4810 departs from the central shaft of ELR loop 4710, loop 4810 is arranged close to ELR loop 4710 branch 4830 (it comprises barrier 4610) and away from the branch 4820 of ELR loop 4710.As depicted, loop 4810 is arranged in ELR loop 4710 asymmetrically.Although otherwise do not illustrate, in various realization of the present invention, loop 4810 can depart from the central shaft of ELR loop 4710, loop 4810 is arranged close to branch 4820 and away from branch 4830.Similarly, in various realization of the present invention (not illustrating in addition), a loop can be arranged close to branch 4820, and another loop can be arranged close to branch 4830.As understood, the position of the loop 4810 in ELR loop 4710 can change the respective flowing of the electric current by each branch 4820,4830, and therefore change integrated operation and/or the sensitivity of ELRQUID4800B.Similarly, the ELR loop 4710 of ELRQUID4800B is sometimes referred to as asymmetrical ELR loop.
Figure 48 C shows the duplex feeding ELRQUID4800C according to various realization of the present invention.ELRQUID4800C is different from ELRQUID4800A, because branch 4840 can wider than the branch 4850 (it comprises barrier 4610) of ELR loop 4710.Therefore as described, branch 4840,4850 represents the another kind of asymmetry that can be used in ELR loop 4710.Although do not illustrate in addition, in various realization of the present invention, branch 4850 can wider than branch 4840.As understood, the width of the branch 4840,4850 in ELR loop 4710 can change the respective flowing of the electric current by each branch 4840,4850, and therefore change integrated operation and/or the sensitivity of ELRQUID4800C.Similarly, the ELR loop 4710 of ELRQUID4800C is sometimes also referred to as asymmetrical ELR loop.
Usually, the ELRQUID4800 referred to can be used as single quantum flux (" RSQF ") logic fast, and when the flux state variation of ELRQUID4800A, this single quantum flux logic may be used for producing individual pulse.In other words, when the field change of the interior zone by being formed by ELR loop 4710, ELRQUID4800 can produce individual pulse.As understood, the pulse produced by ELRQUID4800 will have relatively short pulse duration usually.
Figure 49 A-A show duplex feeding, two Josephson junction ELRQUID4900, usually, and more specifically, two Josephson junction ELRQUID4900A of duplex feeding.According to various realization of the present invention, ELRQUID4900A comprises the ELR loop 4710 with two ELR Josephson junctions 4600 and two loops 4810.As directed, ELRQUID4900 comprises symmetrical loop 4710.The ELR loop 4710 of ELRQUID4900A comprises the ELR conductor 4620 being formed as the loop with two barriers 4610, is eachly arranged in the branch of loop to form ELR Josephson junction 4600.ELRQUID4900 can be formed with the ELR material of operating characteristic work improved by various realization according to the present invention.Such as, in realizations more of the present invention, ELRQUID4900 comprises modification ELR material 1060; In realizations more of the present invention, ELRQUID4900 comprises the ELR material with holes of the operating characteristic with improvement; And in realizations more of the present invention, ELRQUID4900A comprises the new ELR material according to various realization of the present invention.
Figure 49 B-A shows two Josephson junction ELRQUID4900B of the duplex feeding according to various realization of the present invention.ELRQUID4900B comprises asymmetric ELR loop 4710, because discuss above with reference to Figure 48 B-A, loop 4810 departs from the central shaft of ELR loop 4710.Although do not illustrate in addition, in various realization of the present invention, loop 4810 can depart from the central shaft of ELR loop 4710, loop 4810 is arranged close to branch 4820 and away from branch 4830.Similarly, in various realization of the present invention (not illustrating in addition), a loop can be arranged close to branch 4820, and another loop can be arranged close to branch 4830.As understood, the position of the loop 4810 in ELR loop 4710 can change the respective flow direction of the electric current by each branch 4820,4830, and therefore change integrated operation and/or the sensitivity of ELRQUID4900B.
Figure 49 C-A shows two Josephson junction ELRQUID4900C of the duplex feeding according to various realization of the present invention.ELRQUID4900C comprises asymmetric ELR loop 4710, because discuss above with reference to Figure 48 C-A, the size of branch 4840,4850 is different from each other.Although do not illustrate in addition, in various realization of the present invention, branch 4850 can wider than branch 4840.As understood, the width of the branch 4840,4850 in ELR loop 4710 can change the respective flowing of the electric current by each branch 4840,4850, and therefore change integrated operation and/or the sensitivity of ELRQUID4900C.
As understood, although the ELRQUID4900A in Figure 49 A-A to 49C-A is depicted as and has two Josephson junctions 4600, ELRQUID4900A and can comprise three or more Josephson junction 4600.In general, such ELRQUID4900 can be considered to the parallel array (as described in further detail with reference to figure 53-A below) of the Josephson junction 4600 interconnected with ELR section 5320.
Usually, as understood, the ELRQUID4900 referred to may be used for the magnetic field of the interior zone that detection flows is formed via ELR loop 4710.More specifically, as shown in Figure 51-A, ELRQUID4900 can be used with DC biasing circuit 5100A.DC biasing circuit 5100 utilizes DC electric current 5120 to provide the bias current of each branch of the ELR loop 4710 by ELRQUID4900.In this configuration, ELRQUID4900 is sometimes referred to as DCQUID4900.In various realization of the present invention, remained on by the bias current of the branch in ELR loop 4710 or the critical current of barrier 4610A a little less than the Josephson junction 4600 in ELRQUID4900.As understood, the magnetic field flowing through the interior zone formed by ELR loop 4710 will cause the electric current in ELR loop 4710 to exceed the critical current of barrier 4610A-, produce the voltage across barrier 4610 that can detect and/or measure thus.As understood, usual ELRQUID4900 ratio will be as more responsive to magnetic field in ELRQUID4700.
With reference now to Figure 53-A, the structure according to the ELRQUID4900 of various realization of the present invention is described.As understood, description below can be applied to ELRQUID4700,4800 various realizations.As shown in Figure 53-A, ELRQUID4900 can be made up of multiple ELR section 5320.Each ELR section 5320 can have the structure being similar to nanowire segment 4110.In realizations more of the present invention, ELR section 5320 can have the size larger than nanowire segment 4110, and much larger in many cases.In realizations more of the present invention, ELR section 5320 comprises nanowire segment 4110.In realizations more of the present invention, ELR section 5320 comprises all those ELR materials as described above.
In realizations more of the present invention, ELRQUID4900 can comprise the loop 4810 formed by all those ELR materials as described above.In realizations more of the present invention, ELRQUID4900 can comprise the loop 4810 formed by the material being different from ELR material.In realizations more of the present invention, ELRQUID4900 can comprise the loop 4810 formed by electric conducting material.In realizations more of the present invention, ELRQUID4900 can comprise the loop 4810 formed by conducting metal.In realizations more of the present invention, ELRQUID4900 can comprise the loop 4810 formed by a kind of material and another loop 4810A formed by another kind of material.
As understood, in realizations more of the present invention, various interface 5310 (showing for interface 5310A, interface 5310B and interface 5310C) can be used between ELR section 5320 to form ELR loop 4710.(not as understood, for convenience's sake, that total interface 5310 in ELR loop 4710 is all illustrated.) according to various realization of the present invention, interface 5310 represents the transformation between the orientation of the crystal structure of an ELR section 5320 and another ELR section 5320.
ELRQUID4700,4800,4900 (being called ELRQUID interchangeably below) usually found that they entered the mode of various circuit and/or application.Such as, both ELRQUID4700 and ELRQUID4900 may be used for being formed very sensitive magnetometer (as be shown in Figure 52 A-A and below discuss).As understood, according to adopted biased, amplify and the complexity (not illustrating in addition) of feedback circuit, can form magnetometer, its detection can detect part per billion (10 of magnetic field of the earth -10) magnetic field of the order of magnitude.
Figure 52 A-A to 52C-A shows the various gradiometers 5200 according to various realization of the present invention.In general, gradiometer 5200 is the instruments can measuring change in magnetic field or gradient.As understood, Figure 52 A-A show use ELRQUID4700,4900 gradiometer 5200A (also referred to as magnetometer 5200A) to measure the magnetic field of the loop by loop circuit 5210A.As understood, ELRQUID4700,4900 can by magnetic screen.
As understood, Figure 52 B-A will show gradiometer 5200B, and it uses ELRQUID4700 to measure the first derivative by the magnetic field of the loop of loop circuit 5210B.More specifically, two loops of loop circuit 5210B are configured to equal and opposite in direction, parallel to each other and be wound around with phase anti-induction, and the electric current responded in each loop when there is uniform field is cancelled each other.There is such configuration, the loop in loop circuit 5210B catch by be present in change field in loop between difference.
As understood, Figure 52 C-A will show gradiometer 5200C, and it uses ELRQUID4700 to measure the second dervative by the magnetic field of the loop of loop circuit 5210C.More specifically, four loops of loop circuit 5210C are configured to equal and opposite in direction, parallel to each other and be wound around as shown in the figure, and the electric current responded in each loop when there is the magnetic field of even variation is cancelled out each other.Have such configuration, the loop of loop circuit 5210B is caught by the rate of change in the field of loop.
Figure 53-A shows the exemplary ELRQUID5300 according to various realization of the present invention in further detail.As shown in the figure, ELRQUID5300 can be included in multiple ELR sections 5320 (being potential intersection point 5310A, potential intersection point 5310B or potential intersection point 5310C shown in Figure 53-A) that exemplary intersection point 5310 place is coupled.Such as, by one of potential intersection point 5310A, 5310B or 5310C, two ELR sections 5320 can form intersection point 5310.In realizations more of the present invention, potential intersection point 5310A and 5310C forms the perpendicular intersection between two ELR sections 5320; But potential intersection point 5310B forms the intersection point of 45% between two ELR sections 5320; And as understood, other potential intersection points will also be possible.One or more barrier 4610 (shown in Figure 53-A two) is disposed between two ELR sections 5320 to form Josephson junction 4600.Also as directed, multiple ELR section 5320 forms loop 4710, and this loop has at least one barrier 4610 between two that are arranged in multiple ELR section 5320.
More of the present invention realize in, two or more ELRQUID can parallel coupled together.More of the present invention realize in, two or more ELRQUID can series coupled together.More of the present invention during realize, two or more ELRQUID can series coupled together, and with at least one other ELRQUID parallel coupled.More of the present invention during realize, the N of ELRQUID takes advantage of Metzler matrix can be formed in the upper sensor matrices as sensing, measure and/or locate N and take advantage of the various fields in Metzler matrix in surface (plane or other).More of the present invention during realize, the N of ELRQUID takes advantage of M to take advantage of L screen work can be formed as sensing, measure and/or to locate N to take advantage of M to take advantage of the transducer screen work of the various fields in the volume of L screen work.As understood, other configurations various of ELRQUID can be formed.
Due to their sensitivity, ELRQUID can be used to measure the susceptance of material, non-destructively to evaluate the defect in metal, for geophysical reconnaissance, for the observation of microcosmic magnetic and for bio-measurement.In medical treatment and psychodiagnostics and other applications, wherein sample must remain on more than cryogenic temperature well, and the operating characteristic of the improvement of the ELR material used by the ELRQUID of various realization of the present invention widely uses such ELRQUID.
In some implementations, the QUID comprising modification ELR material can describe as follows:
A kind of ELRQUID, comprising: ELR loop, comprises ELR material and the Josephson junction of the operating characteristic with improvement.
A kind of ELRQUID, comprising: ELR loop, comprise the ELR material of critical temperature and the barrier material had higher than 150K, wherein in ELR loop, ELR material and barrier material form at least one Josephson junction.
A kind of ELRQUID, comprising: the multiple ELR sections arranging to be formed ELR loop, forming this ELR section by having higher than the ELR material of the critical temperature of 150K; And to form the barrier of Josephson junction in ELR loop between two that are arranged in each ELR section.
A kind of ELRQUID, comprise: ELR loop, comprise modification ELR material and Josephson junction, wherein modification ELR material comprises the ground floor of ELR material and is bonded to the material modified second layer of ground floor ELR material, and wherein modification ELR material has the operating characteristic of the improvement of the operating characteristic exceeding independent ELR material.
A kind of ELRQUID, comprise: ELR loop, comprise the modification ELR material and barrier material that have higher than the critical temperature of 150K, wherein in ELR loop, ELR material and barrier material form at least one Josephson junction, and wherein modification ELR material comprises the ground floor of ELR material and is bonded to the material modified second layer of ground floor ELR material.
A kind of ELRQUID, comprise: the multiple ELR sections arranging to be formed ELR loop, this ELR section is formed by modification ELR material, wherein modification ELR material comprises the ground floor of ELR material and is bonded to the material modified second layer of ground floor ELR material, and wherein modification ELR material has the operating characteristic of the improvement of the operating characteristic exceeding independent ELR material; And to form the barrier of Josephson junction in ELR loop between two that are arranged in each ELR section.
A kind of asymmetric ELRQUID, comprising: ELR loop, comprise ELR material and Josephson junction, wherein ELR material has the operating characteristic of improvement, and wherein ELR loop has the first branch and the second branch, and wherein more electric current is carried than the second branch in the first branch.
A kind of circuit, comprising: the ELRQUID comprising ELR loop, this ELR loop comprises modification ELR material and Josephson junction; And be coupled to the inductor of ELRQUID, wherein in the ELR loop of ELRQUID, the alternating current flowing through inductor induces electric current.
A kind of circuit, comprising: the ELRQUID comprising ELR loop, this ELR loop comprises modification ELR material and Josephson junction, and this ELRQUID has at least one loop for electric current is introduced ELR loop; For electric current being provided to by loop the source of ELRQUID; And input coil, its electric current sensed and induce induced current in ELRQUID.
A kind of magnetometer, comprising: the ELRQUID comprising ELR loop, this ELR loop comprises modification ELR material and Josephson junction; Inductor; And being coupled to the sensing loop of inductor, the field wherein flowing through described sensing loop provides current to inductor, and wherein in the ELR loop of ELRQUID, induces the second electric current by the electric current of inductor.
A kind of gradiometer, comprising: the ELRQUID comprising ELR loop, this ELR loop comprises modification ELR material and Josephson junction, and sensing circuit, comprise: inductor, be coupled to the first loop of inductor, and be coupled to the second loop of the first loop and inductor, wherein the first loop is substantially identical with the size of the second loop, wherein the first loop is parallel to the central shaft of the second loop and the central shaft along the second loop is arranged, and wherein the first loop is wound around around central shaft on the direction contrary with the second loop, wherein the first loop and the second loop provide current to inductor, wherein this electric current is corresponding to the difference flow through between the field of the first loop and the field flowing through second servo loop, and wherein in the ELR loop of ELRQUID, the second electric current is induced by the electric current of this inductor.
A kind of gradiometer, comprising: the ELRQUID comprising ELR loop, this ELR loop comprises modification ELR material and Josephson junction, and sensing circuit, comprising: inductor, be coupled to the first loop of inductor, and be coupled to the second loop of the first loop, be coupled to the tertiary circuit of the second loop, be coupled to the Fourth Ring road of Three links theory and inductor, wherein the first loop, second loop, Three links theory is substantially identical with the size of the Fourth Ring road, wherein the first loop, second loop, Three links theory and the Fourth Ring road are parallel to each other substantially, wherein the first loop, second loop, Three links theory and the Fourth Ring road share concentric shafts, and wherein the first loop is wound around around concentric shafts on the direction contrary with the second loop, and wherein Three links theory is wound around around concentric shafts on the direction contrary with the Fourth Ring road, wherein the first loop, second loop, Three links theory and the Fourth Ring road provide current to inductor, wherein this electric current corresponds to the difference between the first difference and the second difference, first difference is corresponding to the difference flowed through between the field of the first loop and the field flowing through second servo loop, and the second difference is corresponding to the difference flowed through between the field of Three links theory and the field flowing through the Fourth Ring road, and wherein in the ELR loop of ELRQUID, induce the second electric current by the electric current of inductor.
A kind of circuit, comprising: multiple ELRQUID coupled in series with one another, each in multiple ELRQUID comprises ELR loop, and this ELR loop comprises modification ELR material and Josephson junction.
A kind of circuit, comprising: multiple ELRQUID of the coupling that is connected in parallel to each other, each in multiple ELRQUID comprises ELR loop, and this ELR loop comprises modification ELR material and Josephson junction.
A kind of circuit, comprise: the ELRQUID array of multiple series connection of the coupling that is connected in parallel to each other, each of the ELRQUID array of multiple series connection comprises multiple ELRQUID coupled in series with one another, and each of multiple ELRQUID comprises ELR loop, and this ELR loop comprises modification ELR material and Josephson junction.
A kind of circuit, comprise: the ELRQUID array of multiple parallel connections coupled in series with one another, each of the ELRQUID array of multiple parallel connection comprises the multiple ELRQUID being connected in parallel to each other and being coupled, each in multiple ELRQUID comprises ELR loop, and this ELR loop comprises modification ELR material and Josephson junction.
A kind of circuit, comprising: the ELRQUID matrix that ELRQUID that is capable by N and M row forms, and each in multiple ELRQUID comprises ELR loop, and this ELR loop comprises modification ELR material and Josephson junction.
A kind of circuit, comprise: a large amount of ELRQUID screen work arranged, ELRQUID is formed by L the matrix being included in the ELRQUID that the capable and M of spaced apart N in each matrix arranges, each in multiple ELRQUID comprises ELR loop, this EIR loop comprises modification ELR material and Josephson junction, wherein modification ELR material comprises the ground floor of ELR material and is bonded to the material modified second layer of ground floor ELR material, and wherein modification ELR material has the operating characteristic of the improvement of the operating characteristic exceeding independent ELR material.
the medicine equipment of the 4th chapter-formed by ELR material
This chapter of specification relates to Fig. 1-36 and Figure 37-A to Figure 59-A; Therefore all reference markers be included in this part relate to the element found in such accompanying drawing.
Due to their sensitivity, ELRQUID may be used for the susceptance measuring material, non-destructively to evaluate the defect in metal, for geophysical reconnaissance, for the observation of microcosmic magnetic, and for bio-measurement.In medical treatment and psychodiagnostics and other applications, wherein sample must remain on more than cryogenic temperature well, and the operating characteristic of the improvement of the ELR material used by the ELRQUID of various realization of the present invention widely uses such ELRQUID.
Figure 54 A shows the exemplary MRI system 5410 according to various realization of the present invention.In realizations more of the present invention, can control MRI system 5410 by operator's console 5412, this operator's console 5412 can include, but not limited to input equipment 5413, control panel 5414 and display screen 5416.In realizations more of the present invention, input equipment 5413 can comprise, but be not limited to, mouse, joystick, keyboard, tracking ball, touch activate the input equipment of screen, optical wand, Voice command or any similar or equivalence, and may be used for interactive geometry and indicate.
In realizations more of the present invention, via link 5418, operator's console 5412 communicates with independent computer system 5420, and it allows operator to control generation and the display of the image on display screen 5416.In realizations more of the present invention, computer system 5420 comprises the number of modules intercomed by backboard 5420A phase.These modules can include, but not limited to image processor block 5422, CPU module 5424 and memory module 5426, the known frame buffer as being used for storing image data array in this area.More of the present invention during realize, computer system 5420 is linked to disk storage 5428 and tape drive 5430, for the storage of view data and program.
In realizations more of the present invention, by high speed serialization link 5434, computer system 5420 communicates with independent Systematical control 5432.In realizations more of the present invention, Systematical control 5432 comprises the module group linked together by backboard 5432a.These modules can comprise, but be not limited to, CPU module 5436A and be connected to the pulse generator module 5438A of operator's console 5412 by serial link 5440, this Systematical control 5432 can receive the order from operator by serial link 5440, to indicate the scanning sequence that will perform.In realizations more of the present invention, pulse generator module 5438 operating system assembly is to perform required desired scanning sequence and to produce data, the sequential of the RF pulse that this data representation produces, intensity and shape, and the sequential of data acquisition window and length.Pulse generator module 5438 is connected to gradient amplifier group 5442 to indicate sequential and the shape of the gradient pulse produced in this scan period.In realizations more of the present invention, pulse generator module 5438 can also receive the patient data from physiological acquisition controller 5444, wherein physiological acquisition controller 5444 receives the signal from the multiple different sensors being connected to patient, such as, from the ECG signal of electrode being attached to patient.In realizations more of the present invention, pulse generator module 5438 is connected to scan room interface circuit 5446, and it receives the signal from the various transducers relevant to the situation of patient and magnet system.In realizations more of the present invention, by scan room interface circuit 5446, patient positioning system 5448 can receive order patient to be moved to the required desired position of scanning.In realizations more of the present invention, patient positioning system 5448 can control the position of patient, and patient is shifted continuously or incrementally in data acquisition period.
In realizations more of the present invention, the gradient waveform produced is applied to there is G by pulse generator module 5438 x, G yand G zthe gradient amplifier 5442 of amplifier.In the gradient coil assembly being generally designated as 5450, each gradient amplifier 5442 excites corresponding physics gradient coil, to produce the magnetic field gradient for space encoding collection signal.In realizations more of the present invention, gradient coil assembly 5450 can form the part of the magnet assembly 5452 comprising polarized magnets 5454 and overall RF coil 5456.In realizations more of the present invention, the transceiver module 5458 in Systematical control 5432 produces the pulse of being amplified by RF amplifier 5460, and RF amplifier 5460 is coupled to overall RF coil 5456 by sending/receiving switch 5462.Can be sensed by same overall RF coil 5456 by the consequential signal of the excited atom nuclear emission in patient, and be coupled to preamplifier 5464 by sending/receiving switch 5462.The MR signal that demodulation in the receiver part of transceiver module 5458, filtering and digitlization are amplified.Switch 5462 is send/receive by the signal controlling from pulse generator module 5438, RF amplifier 5460 is electrically connected to overall RF coil 5456 during emission mode, and during receiving mode, preamplifier 5464 is connected to overall RF coil 5456.In realizations more of the present invention, sending/receiving switch 5462 can also allow independent RF coil (such as, surface coils) to be used in any one of transmission or receiving mode.
This MR signal picked up by overall RF coil RF coil 5456 by transceiver module 5458 digitlization this MR signal is transferred to the memory module 5466 in Systematical control 5432.When obtaining the array of primary k-space data in memory module 5466, scanning is complete.For each image that will be reconstructed, this primary k-space data is re-arranged into independently k-space data array, and each in these is imported into array processor 5468, and it performs data Fourier transform is array of image data.By serial link 5434, this view data is sent to computer system 5420, and wherein this view data is stored in memory, such as magnetic disc store 5428A.In response to the order received from operator's console 5412, this view data can be archived in longer-term storage, as on tape drive 5430, or it can process further by by image processor 5422, conveys to operator's console 5412 and is presented by display 5416.
Various realization of the present invention comprises the method and system be suitable for for MRI system 5410, or for obtaining any similar or equivalent system of magnetic resonance image (MRI).
Figure 55 A-A shows and adopts according to various realization of the present invention exemplary MRI magnet 5500A and 5500B comprising the various ELR materials of modification ELR material, ELR material with holes and/or new ELR material.Magnet 5500A and 5500B produces magnetic field B 0.During MRI process, magnetic field B 0aim at some atom of the experimenter's (such as, human body etc.) be distributed in the internal bodily tissue of experimenter.In some implementations, can along being basically parallel to magnetic field B 0path place experimenter, experimenter is placed by magnet 5500 (such as, " closing " hole MRI to apply).In some implementations, can along being basically perpendicular to magnetic field B 0path place experimenter, make described experimenter be placed on (such as, open to the outside world MRI applies) between each magnet 5500.
As understood, although illustrated a pair MRI magnet 5500 in Figure 55 A-A, 55B-A and 55C-A, any amount of magnet can be used.In addition, as understood, although in Figure 55 00, MRI magnet 5500 will be depicted as annular shape, and other can be adopted to configure.
Figure 55 B-A shows the magnetic field B produced according to cross section and they of MRI magnet 5500A and 5500B of various realization of the present invention 0.
Figure 55 C-A shows the cross section of the part of the magnet 5500A according to various realization of the present invention.In realizations more of the present invention, magnet 5500A can include, but not limited to housing 5520, ELR material 5510 and be coupled to the switch 5530 of power supply (not shown in Figure 55 C-A).
In realizations more of the present invention, near housing 5520, make the winding housing of ELR material 5510.In realizations more of the present invention, housing 5520 can comprise chamber, and this chamber comprises the winding of ELR material 5510.In realizations more of the present invention, housing 5520 can hold or otherwise comprise the winding of ELR material 5510.
In realizations more of the present invention, switch 5530 can be coupled to power supply electric current being supplied to ELR material 5510, thus produces magnetic field B 0.In realizations more of the present invention, ELR material 5510 can be configured to band or line.In some implementations, ELR material can be configured to multiple nanowire segment, such as nanowire segment 4110.In realizations more of the present invention, ELR material 5510 can be configured to nano wire coil, such as, but not limited to, nano wire coil 4200,4300 and/or 4400.In various realization of the present invention, ELR material 5510 can comprise the modification ELR material 1060 according to various realization of the present invention, ELR material with holes and/or other new ELR materials.
In realizations more of the present invention, magnet 5500 to have the operating characteristic work of improvement, such as, is operated in the temperature place higher than cryogenic temperature.In realizations more of the present invention, magnet 5500 to have the operating characteristic work of improvement, such as, is operated in the temperature place of more than 150K.In some implementations, magnet 5500 can produce and have the magnetic field B of magnetic flux density higher than at least 1.0T, 1.5T, 3.0T, 4.5T or 6.0T 0, and without the need to cryogenic coolant.
Figure 56-A shows the cross-sectional view of the MRI magnet assembly 5000 according to various realization of the present invention.As understood, although in Figure 50-A, MRI magnet assembly 5000 is depicted as annular cellular type magnet assembly, and other can be used to configure, as spirality, ellipse or other shapes.Such as, utilization can be used to have the open of the magnet of ELR material or portable MRI configuration.
According to various realization of the present invention, MRI magnet assembly 5600 can include, but not limited to ELR material 5610, housing 5620, insulating barrier 5630, chamber 5640, cold head 5650 and hole 5660A.In realizations more of the present invention, ELR material 5610A can comprise the modification ELR material 1060 according to various realization of the present invention, ELR material with holes and/or new ELR material.In realizations more of the present invention, ELR material 5610 can be configured to band or line.In realizations more of the present invention, ELR material 5610 can be configured to nano wire, such as multiple nanowire segment 4110.In realizations more of the present invention, ELR material 5610 can be configured to nano wire coil, as nano wire coil 4200,4300 and/or 4400.
In realizations more of the present invention, ELR material 5610 is disposed in the chamber 5640 of housing 5620.In realizations more of the present invention, chamber 5640 is filled with cooling agent, and magnet 5610 is immersed in cooling agent.In realizations more of the present invention, cooling agent can comprise cryogenic coolant or non-cryogenic cooling agent.As understood, in these realize, cold head 5650 will comprise the structure for keeping cooling agent.In realizations more of the present invention, chamber 5640 can be filled with cooling agent, such as gas (such as, surrounding air or other gas) or liquid (such as, water, carbon dioxide, ammonia, freon tM, water-ethylene glycol mixture, the mixture of water-betaine or other liquid) or other cooling agents.
More of the present invention realize in (not being shown in Figure 56-A), magnet 5610 can be arranged in solid material or on.
According to various realization of the present invention, ELR material 5610 with the operating characteristic work improved, such as, is operated in the temperature place higher than cryogenic temperature.In realizations more of the present invention, ELR material 5610 with the operating characteristic work improved, such as, is operated in the temperature place of more than 150K.Therefore, when there is no cryogenic coolant, MRI magnet assembly 5100 can produce the magnetic field B in the magnetic field being substantially equivalent to or being better than the traditional superconducting magnet using cryogenic coolant (such as, liquid helium, liquid nitrogen or other cryogenic coolants) to work 0.In realizations more of the present invention, MRI magnet assembly 5100 produces the magnetic field B being substantially equivalent to the traditional superconducting magnet using cryogenic coolant such as liquid helium or liquid nitrogen work 0.
Figure 57-A is the block diagram of the exemplary MRI circuit 5700 illustrated according to various realization of the present invention.According to various realization of the present invention, MRI circuit 5700 can comprise, but be not limited to, transducer 4500, filter 5702, analogue-to-digital converters (ADC) 5704, digital up converter (DUC) 5706, filter 5708, processor/detector 5710, filter 5712, digital down converter (DDC) 5714, digital equalizer 5716, digital-analog convertor (DAC) 5718 and high power amplifier (HPA) 5720.
As understood, in realizations more of the present invention, filter 5702 and 5708, ADC5704 and digital up converter 5706 can be configured to acceptor circuit.Similarly, as understood, in realizations more of the present invention, filter 5712, digital down converter 5714, digital equalizer 5716, DAC5718 and HPA5720 can be configured to transmitter circuit.As understood, in realizations more of the present invention, above-mentioned acceptor circuit and transmitter circuit can be configured to transceiver circuit.
In realizations more of the present invention, one or more assemblies of acceptor circuit, transmitter circuit or transceiver circuit, or one or more elements of one or more assembly (such as, interconnection etc.) can comprise (namely, by ... form) according to the ELR material of the improvement of the various realization of the present invention, as modification ELR material 1060, ELR material with holes and/or new ELR material.In realizations more of the present invention, the ELR material of improvement can be configured to ELR nano wire, and can comprise multiple nanowire segment 4110.In realizations more of the present invention, ADC5704 can comprise low noise and highly sensitive digitizer front end, such as adopt the ELRQUID detector of one or more ELRQUID (such as, ELRQUID4700, ELRQUID4800, ELRQUID4900).In some implementations, the ELRQUID detector in MRI is used to increase the resolution of RF detection.In some implementations, use high QELR filter to reduce insertion loss and bandwidth, and improve SNR.In realizations more of the present invention, ELRQUID detector is the sensitive needs being enough to remove low noise amplifier.
In realizations more of the present invention, processor 5710 can be configured to receive the voltage caused by transducer 4500.Processor 5710 can be configured to based on various assemblies (it can be formed by the ELR material improved) process information in the acceptor circuit be operated in ELR state and/or transmitter circuit.This can improve the speed of signal transacting, thus reduces sweep time.In realizations more of the present invention, processor 5710 can be configured to the voltage controlling to be sent to transducer 4500, to produce RF pulse.
Figure 58-A shows the cross-sectional view of the MRI device 5800 according to various realization of the present invention.According to various realization of the present invention, MRI device 5800 can comprise, but be not limited to, housing 5802, magnet 5810, gradient coil 5820, RF coil 5830, magnet bore 5860, circuit 5870, RF coil controllers 5875, gradient coil controllers 5880 and computing equipment 5890.In realizations more of the present invention, circuit 5870 can comprise one or more assembly of the circuit 5700 shown in Figure 57-A and/or one or more element.In realizations more of the present invention, computing equipment 5890 can be coupled to RF coil controllers 5875, gradient coil controllers 5880A and circuit 5870.Via RF coil controllers 5875 and gradient coil controllers 5880, computing equipment 5890 can control the electromagnetic field launched by gradient coil 5820 and/or RF coil 5830.In realizations more of the present invention, computing equipment 5890 control circuit 5870.
In realizations more of the present invention, the various assemblies of MRI equipment 5800 can adopt the ELR material of improvement described here.Such as, magnet 5810, gradient coil 5820, RF coil 5830 and/or circuit 5870 can adopt the ELR material of improvement disclosed herein.
By comprising the various assemblies of the ELR material adopting improvement so disclosed herein, MRI device 5800 can realize performance more better than traditional MRI scanner of the ELR material not adopting such improvement.Such as, MRI device 5800 can realize the SNR of the improvement for experimenter, higher resolution, simplification and cool reliably, the size reduced, larger opening (magnet opening 5860) and higher energy efficiency.
In realizations more of the present invention, magnet 5810 can comprise the ELR material of the improvement according to various realization of the present invention, as modification ELR material 1060, ELR material with holes and/or new ELR material.In realizations more of the present invention, magnet 5810 can comprise the magnet 5500A shown in Figure 55 C-A.
By using the ELR material of various improvement disclosed herein, magnet 5810 presents the operating characteristic of the improvement exceeding traditional MRI magnet.As previously mentioned, the operating characteristic improved like this, comprises the higher working temperature when providing magnetic field intensity from 0.5T to 3.0T He larger.By being operated in higher temperature place, magnet 5810 needs less or does not need cooling system, thus contributes among other advantages, the more compact design of MRI device 5800 and less operating cost.Such as, the less space being exclusively used in cooling system allows larger hole opening, can place experimenter by this opening.By this way, more open system and therefore can scan larger patient or wheel bed on patient.Such as, lie wheel bed thereon or other structures of experimenter can rotate or otherwise be placed on for scanning in the MRI device 5800 of experimenter, or MRI device 5800 itself can rotate or be placed on around wheel bed.Because larger opening contributes to by using magnet 5810, MRI device 5800 is not limited to the rigid table of traditional MRI scanner.
In realizations more of the present invention, gradient coil 5820 can comprise the ELR material of the improvement according to various realization of the present invention, such as modification ELR material 1060, ELR material with holes and/or new ELR material.By using the ELR material of various improvement disclosed herein, gradient coil 5820 exhibits greater than the operating characteristic of the improvement of traditional gradient coil.In realizations more of the present invention, RF coil 5830 can comprise the ELR material of the improvement according to various realization of the present invention, such as modification ELR material 1060, ELR material with holes and/or new ELR material.By using the ELR material of various improvement disclosed herein, RF coil 5830 exhibits greater than the operating characteristic of the improvement of traditional RF coil.Such as, use the ELR material improved, gradient coil 5820 and/or RF coil 5830 can reduce or eliminate resistance loss, and increase above selectivity and the resolution of conventional coil.
In realizations more of the present invention, RF coil 5830 can comprise various transducer disclosed herein, such as transducer 4500.
In realizations more of the present invention, circuit 5870 can comprise the ELRQUID detector adopting one or more ELRQUID (such as, ELRQUID4700, ELRQUID4800, ELRQUID4900).In some implementations, the ELRQUID detector in MRI is used to increase resolution and the sensitivity of RF detection.In some implementations, use high QELR filter to reduce insertion loss and bandwidth, and improve SNR.
In some implementations, transmission and the detectivity of the enhancing obtained owing to using the ELR material (such as above-described those) improved contribute to low field (such as, be less than 0.5T) use of MRI, realize the resolution higher than traditional low frequency MRI simultaneously.In these realize, low frequency MRI allows portability, measure larger, less field of restriction, the minimizing of chemical shift and greatly reduce the cost of system.Chemical shift relates to the change of the resonance frequency of the intrinsic magnetic cup covert generation due to anatomical structure.Molecular structure and electron orbit characteristic produce the field of shielding main field and in magnetic resonance spectrum, cause obvious peak.When proton spectra, peak corresponds to water and fat, and when breast becomes rubber, peak corresponds to silicone material.Compare the resonance frequency of the proton in water, the lower frequency of the proton in fat is about 3.5/1000000ths parts (" ppm "), and the lower frequency of proton in silicones is 5.0ppm.Due to resonance frequency along with magnetic field intensity linearly increases, the absolute difference between fat and the resonance of water also can increase, and makes high field intensity magnet more easily be subject to the impact of chemical shift artifact.Therefore, use low frequency MRI to keep high resolution can reduce or eliminate the impact of chemical shift simultaneously.
More of the present invention during realize, low frequency MRI alleviates the requirement of arranging the close-coupled of gradient coil 5820 and/or RF coil 5830, thus is deployed in the inclusion enclave wherein scanning experimenter.In these realize, MRI device 5800 can be more portable, such as, rotate/location, makes it surround wheel bed or carries other structures of experimenter.As understood, wheel bed or other structures can be made by MRI inert material.
Figure 59-A shows the portable MRI device system 5900 according to various realization of the present invention.In realizations more of the present invention, portable MRI device system 5900 can comprise, but be not limited to, portable MRI device 5910, transducer 5920, ELRQUID detector 5930, magnet 5950, gradient coil 5960, RF coil 5970 and computing equipment 5940.More of the present invention during realize, ELRQUID detector 5930 (such as, ELRQUID4700,4800,4900 etc.) adopts the ELR material improved, thus has the operating characteristic improved as above.In some implementations, computing equipment 5940 controls the magnetic field from magnet 5950.In some implementations, computing equipment 5940 controls the gradient fields from gradient coil 5960.In some implementations, computing equipment 5940 controls the driving pulse from RF coil 5970.
In realizations more of the present invention, computing equipment 5940 can be coupled to magnet 5950 and ELRQUID detector 5930.In realizations more of the present invention, computing equipment 5940 makes magnet 5950 produce the magnetic field scanned for low frequency MRI.In realizations more of the present invention, magnet 5950 can comprise the low-intensity magnet producing and be less than the low-intensity field of about 0.5 tesla, and this is promoted by the sensitivity of ELRQUID detector 5930.In realizations more of the present invention, gradient coil 5960 can produce the gradient fields of some atom allowing location experimenter.In realizations more of the present invention, RF coil 5970 can produce driving pulse, and this causes the resonance signal of the atom from experimenter.
According to various realization of the present invention, transducer 5920 can include, but not limited to other sensing components of the resonance signal of the low-intensity magnetic fields generation that magnetometer, gradiometer, magnetic flow convertor or sensing are produced by magnet 5950.As understood, ELRQUID detector 5930 can receive and process the signal sensed.
Different from using the legacy equipment of SQUID detector, portable MRI device 5910 does not need to use cryogenic coolant/cooler to cool ELRQUID detector 5930.Therefore, except other advantages, such as higher picture quality, lower cost and more easily safeguard, portable MRI device 5910 can easily movement, and does not need subcolling condenser.
As shown in Figure 59-A, such as, portable MRI device 5910 can be positioned at proximity structure 5902, such as, but not limited to, wheel bed, inspection desk or wall/floor/ceiling.In realizations more of the present invention, portable MRI device 5910 is coupled to structure 5902 rigidly.Other realize in, can around structure 5902 mobile portable MRI device 5910.Such as, structure 5902 can be placed in MRI device 5910 and/or MRI device 5910 can be placed on around structure 5902 movably movably.In these realize, magnet 5950 itself can be of portable form, and is coupled to the housing (not being shown in Figure 59-A) of portable MRI device 5910 rigidly, or can be coupled to structure 5902 or other structures rigidly.
In realizations more of the present invention, structure 5902 can comprise relative surface 5901 and 5903.Position-based or other specifications, surface 5901 and/or surface 5903 can have substantially flat, bending or other shapes.More of the present invention realize in, when surface 5901 on or near time can scan experimenter such as patient.Such as, patient may stand in surperficial 5901 sides, lie in surface 5901 or below above, or body part such as arm, head or other four limbs to be placed near surface 5901, above or below.More of the present invention during realize, portable MRI device 5910 can be placed on neighbouring surface 5903 (that is, on the side contrary with by the experimenter scanned of structure 5902).By this way, open MRI process can be realized, wherein experimenter stands near structure 5902, lies in above or below structure 5902, and is not adjacent to the scanner of the experimenter side relative with portable MRI device 5910 or the assembly of portable MRI device 5910.In these realize, the image that can be produced by portable MRI device 5910 carrys out ancillary medical procedure, such as operation or inspection.
According to various realization of the present invention, magnet 5950, gradient coil 5960 and/or RF coil 5970 adopt as described in this thus have the ELR material of the improvement of the operating characteristic of improvement.In these realize, the ELR material improved is adopted to be conducive to the various structures of magnet 5950, gradient coil 5960 and/or RF coil 5970.Such as, magnet 5950, gradient coil 5960 and/or RF coil 5970 is utilized to relax the traditional magnet required for traditional MRI scanner, the close-coupled between gradient coil and RF coil.Compared to the conventional scanner using those not adopt traditional magnet, gradient coil and the RF coil of improvement ELR material described here, these configurations of relaxing may cause larger hole opening.Larger hole opening is conducive to the transportability (be such as moveable around structure 5902, or vice versa) of portable MRI device 5910 and the adaptability to larger experimenter.
As understood, in realizations more of the present invention, portable MRI device 5910 can comprise active and/or passive electromagnetic shielding (not shown).More of the present invention during realize, portable MRI device 5910 can be used in " totally " or the space that otherwise shields.(not shown) in realizations more of the present invention, structure 5902 can comprise one or more shielding element.
Although what illustrate is the side being positioned at the structure 5902 contrary with experimenter, due to the transportability of portable MRI device 5910, portable MRI device 5910 can be placed on the various positions relative to described experimenter.In addition, the combination in any of transducer 5920, ELRQUID detector 5930, computing equipment 5940, magnet 5950, gradient coil 5960 and RF coil 5970 can be contained in single housing (such as shown in Figure 54-A) or multiple housing.Such as, magnet 5950 also can be of portable form, and can be comprised by portable MRI device 5910 or can be coupled to structure 5902.
As understood, computing equipment 5940 can comprise memory, the instruction of the one or more processor of its stored configuration (not shown in Figure 59-A), its control magnet 5950 and based on ELRQUID detector 5930 process and produce MRI image.
In some implementations, the Medical Devices comprising modification ELR material can describe as follows:
A kind of magnet of magnetic resonance imaging (MRI), comprising: ELR material, described ELR material has the operating characteristic of improvement; Wherein said ELR transmission of materials produces the electric current in magnetic field during MRI process, and wherein said magnetic field makes some atom in the body of experimenter aim at.
A kind of magnet assembly of magnetic resonance imaging (MRI), comprising: housing; And being coupled to the MRI magnet of described housing, described MRI magnet comprises: the ELR material with the operating characteristic of improvement, and wherein, in MRI process period ELR material producing magnetisation field, wherein said magnetic field makes some atom in the body of experimenter aim at.
A kind of magnet of magnetic resonance imaging (MRI), comprising: the wire comprising ELR material, described ELR material has the operating characteristic of improvement; Wherein, described wire transmission produces the electric current in magnetic field during MRI process, and wherein said magnetic field makes some atom in the body of experimenter aim at.
A kind of magnet assembly of magnetic resonance imaging (MRI), comprising: housing; And being coupled to the MRI magnet of described housing, described MRI magnet comprises the ELR material of the operating characteristic with improvement, wherein described ELR material producing magnetisation field during MRI process, and wherein said magnetic field makes some atom in the body of experimenter aim at.
A kind of magnet of magnetic resonance imaging (MRI), comprise: ELR nano wire, described ELR nano wire is configured to conduction current to produce magnetic field during MRI process, wherein ELR nano wire comprises: ELR material, have the three-dimensional parameter comprising length, width and the degree of depth, at least one of wherein dimensional parameter is less than threshold value and makes described ELR nano wire not occur at least one superconducting phenomenon when working with pole low resistance.
A kind of magnet assembly of magnetic resonance imaging (MRI), comprising: housing; And be coupled to the MRI magnet of described housing, described MRI magnet comprises: ELR nano wire, described ELR nano wire is configured to conduction current to produce magnetic field during MRI process, wherein said ELR nano wire comprises: ELR material, have the three-dimensional parameter comprising length, width and the degree of depth, at least one of wherein dimensional parameter is less than threshold value and makes described ELR nano wire not occur at least one superconducting phenomenon when working with pole low resistance.
A kind of magnet of magnetic resonance imaging (MRI), comprise: nano wire, comprise the ELR material of the operating characteristic with improvement, wherein said nano wire transmission produces the electric current in magnetic field during MRI process, and wherein said magnetic field makes some atom in the body of experimenter aim at.
A kind of magnet assembly of magnetic resonance imaging (MRI), comprising: housing; And be coupled to the MRI magnet of described housing, described MRI magnet comprises: nano wire, comprise the ELR material of the operating characteristic with improvement, wherein during MRI process, described nano wire produces magnetic field, and wherein said magnetic field makes some atom in the body of experimenter aim at.
A kind of magnet of magnetic resonance imaging (MRI), comprise: ELR nano wire contour, described ELR nano wire contour is configured to conduction current to produce magnetic field during MRI process, wherein said magnetic field makes some atom in the body of experimenter aim at, wherein said ELR nano wire contour comprises: at least one ELR nanowire segment, and each ELR nanowire segment comprises the ELR material of the operating characteristic with improvement.
A kind of magnet assembly of magnetic resonance imaging (MRI), comprising: housing; And be coupled to the MRI magnet of described housing, described MRI magnet comprises: ELR nano wire contour, described ELR nano wire contour is configured to conduction current to produce magnetic field during MRI process, wherein said magnetic field makes some atom in the body of experimenter aim at, wherein said ELR nano wire contour comprises: at least one ELR nanowire segment, and each ELR nanowire segment comprises the ELR material of the operating characteristic with improvement.
A kind of magnet of magnetic resonance imaging (MRI), comprise: ELR nano wire coil, described ELR nano wire coil configuration is that conduction current to produce magnetic field during MRI process, wherein said magnetic field makes some atom in the body of experimenter aim at, wherein said ELR nano wire coil comprises: at least one ELR nano wire contour, each of at least one ELR nano wire contour described comprises multiple ELR nanowire segment, each of multiple ELR nanowire segment be coupled to multiple ELR nanowire segment at least another to basically form polygon, each of at least one ELR nanowire segment described comprises the ELR material of the operating characteristic with improvement.
A kind of magnet assembly of magnetic resonance imaging (MRI), comprising: housing, and be coupled to the MRI magnet of described housing, described MRI magnet comprises: ELR nano wire coil, described ELR nano wire coil configuration is that conduction current to produce magnetic field during MRI process, wherein said magnetic field makes some atom in the body of experimenter aim at, wherein said ELR nano wire coil comprises: at least one ELR nano wire contour, each of at least one ELR nano wire contour described comprises multiple ELR nanowire segment, each of multiple ELR nanowire segment be coupled to multiple ELR nanowire segment at least another to basically form polygon, each of at least one ELR nanowire segment described comprises the ELR material of the operating characteristic with improvement.
A kind of nano wire transducer (converter) of magnetic resonance imaging (MRI), comprise: at least one nanowire segment be made up of the ELR material improved, one of wherein said MRI nano wire transducer is for both: induce magnetic field when electric current being applied at least one nanowire segment during MRI process, wherein electromagnetic field makes some atom in the body of experimenter aim at, or when the atom that some is aimed at during MRI process becomes misalignment, sense by the resonance signal of some atomic emissions in the body of experimenter.
A kind of nano wire transducer of magnetic resonance imaging (MRI), comprise: at least one nanowire segment be made up of the ELR material improved, wherein, when being exposed to resonance signal during MRI process, by at least one nanowire segment, described MRI nano wire transducer sensing resonance signal be converted to by sensed resonance signal can be measured and be used for the alternating current of imaging.
A kind of nano wire transducer of magnetic resonance imaging (MRI), comprise: at least one nanowire segment be made up of the ELR material improved, wherein said MRI nano wire transducer is electrically coupled to alternate current-changing source, wherein during MRI process, in response to described alternate current-changing source, described MRI nano wire transducer induces electromagnetic field, the electromagnetic field induced makes some atom in the body of experimenter aim at, and when some atom described becomes misalignment, emission resonance signal subsequently, wherein said resonance signal can be detected and for imaging.
A kind of nano wire transducer of magnetic resonance imaging (MRI), comprise: the ELR material with the operating characteristic of improvement, one of wherein said MRI nano wire transducer is for both: induce magnetic field when electric current being applied to MRI nano wire transducer during MRI process, wherein electromagnetic field makes some atom in the body of experimenter aim at, or when during MRI process, when some atom aimed at becomes misalignment, sense by the resonance signal of some atomic emissions in the body of experimenter.
A kind of nano wire transducer of magnetic resonance imaging (MRI), comprise: the ELR material with the operating characteristic of improvement, wherein when being exposed to resonance signal during MRI process, described MRI nano wire transducer sensing resonance signal be converted to by sensed resonance signal can be measured and be used for the alternating current of imaging.
A kind of nano wire transducer of magnetic resonance imaging (MRI), comprise: the ELR material with the operating characteristic of improvement, wherein said MRI nano wire transducer is electrically coupled to alternate current-changing source, wherein during MRI process, in response to described alternate current-changing source, described MRI nano wire transducer induces electromagnetic field, the electromagnetic field induced makes some atom in the body of experimenter aim at, and when some atom described becomes misalignment, emission resonance signal subsequently, wherein said resonance signal can be detected and for imaging.
A kind of transmitter circuit of magnetic resonance imaging (MRI), comprising: digital-analog convertor (DAC), and it produces the analog signal that the numeral based on MRI system exports; And being electrically coupled to the transducer of DAC, described transducer comprises: the ELR material of improvement, and wherein when analog signal being applied to the ELR material of improvement, described transducer induces magnetic field, and wherein electromagnetic field makes some atom in the body of experimenter aim at.
A kind of acceptor circuit of magnetic resonance imaging (MRI), comprise: transducer, comprising: the ELR material of improvement, wherein when during MRI process, when some atom aimed at becomes misalignment, described transducer sensing is by the resonance signal of some atomic emissions in the body of experimenter; And being electrically coupled to the analogue-to-digital converters (ADC) of described transducer, wherein said ADC is by resonance signal digitlization, and wherein digitized resonance signal is for generation of MRI image.
A kind of transceiver circuit of magnetic resonance imaging (MRI), comprise: transducer, comprise: the ELR material of improvement, wherein during MRI process, described transducer: when the atom that some is aimed at during MRI process becomes misalignment, sense by the resonance signal of some atomic emissions in the body of experimenter, or induce magnetic field when analog signal being applied to the ELR material of improvement, wherein electromagnetic field makes some atom in the body of experimenter aim at; And being electrically coupled to the analogue-to-digital converters (ADC) of described transducer, wherein said ADC is by resonance signal digitlization, and wherein digitized resonance signal is for generation of MRI image; And digital-analog convertor (DAC), its numeral based on MRI system exports and produces analog signal.
A kind of magnetic resonance imaging (MRI) scanner, comprising: MRI magnet, comprises the ELR material of improvement; The RF transducer of MRI, be configured to: induce magnetic field when electric current being applied to the RF transducer of MRI during MRI process, wherein, electromagnetic field makes some atom in the body of experimenter aim at, and the resonance signal of some atomic emissions when they become misalignment during MRI process described in sensing; And MRI detector, detect the resonance signal sensed from the RF transducer of MRI to produce MRI image.
A kind of MRI detector, comprising: ELRQUID, comprises the ELR material of improvement, wherein when during MRI process experimenter body in some atom aimed at become misalignment time, the resonance signal that described ELRQUID detection is launched by their.
A kind of MRI detector, comprise: ELRQUID, comprise the ELR material of operating characteristic that there is at least one and improve, wherein when during MRI process experimenter body in certain accurate atom of becoming a partner become misalignment time, the resonance signal that ELRQUID detection is launched by their.
A kind of MRI detector, comprise: ELRQUID, comprise modification ELR material, described modification ELR material comprises and is bonded to material modified ELR material, described modification ELR material has the operating characteristic of the improvement exceeding independent ELR material, wherein when during MRI process experimenter body in some atom aimed at become misalignment time, the resonance signal that described ELRQUID detection is launched by their.
A kind of portable MRI scanner, comprise: MRI magnet, comprise the ELR material of improvement, the ELR material of wherein said improvement is operated in the ELR state higher than the temperature place of 150K, described MRI magnet during MRI process is made not need sub-cooled, wherein expand the hole of described MRI magnet, make the structure periphery scanning experimenter during MRI process thereon, described portable MRI scanner is moveable; The RF transducer of MRI, be configured to: when during MRI process, when electric current being applied to the RF transducer of MRI, induce magnetic field, wherein electromagnetic field makes some atom in the body of experimenter aim at, and when some atom becomes misalignment during MRI process, sense the resonance signal launched by them; And MRI detector, detect the resonance signal sensed from the RF transducer of MRI to produce MRI image.
A kind of portable MRI scanner, comprise: MRI magnet, comprise the ELR material of improvement, the ELR material of wherein said improvement is operated in the ELR state higher than the temperature place of 150K, described MRI magnet during MRI process is made not need sub-cooled, wherein expand the hole of described MRI magnet, the structure scanning experimenter during MRI process thereon can be moved from described portable MRI scanner; The RF transducer of MRI, be configured to: when during MRI process, when electric current being applied to the RF transducer of MRI, induce magnetic field, wherein electromagnetic field makes some atom in the body of experimenter aim at, and when some atom becomes misalignment during MRI process, sense the resonance signal launched by them; And MRI detector, detect the resonance signal sensed from the RF transducer of MRI to produce MRI image.
A kind of portable MRI scanner, comprising: low intensive magnet, produces low intensive magnetic field; The RF transducer of MRI, be configured to: when during MRI process, when electric current being applied to the RF transducer of MRI, induce magnetic field, wherein electromagnetic field makes some atom in the body of experimenter aim at, and when some atom becomes misalignment during MRI process, sense the resonance signal launched by them; And detect the ELRQUID detector of this resonance signal.
A kind of portable MRI scanner, comprising: MRI magnet; MRI gradient coil, comprise: the ELR material of improvement, wherein said MRI gradient coil conduction current to produce gradient fields during MRI process, wherein said gradient fields makes some atom in the body of experimenter spin with different speed based on some atom described position in the body, the ELR material of wherein said improvement allows the customized configuration of MRI gradient coil, allows the hole expanding described MRI magnet; And MRI detector, during MRI process, detect resonance signal to produce MRI image.
A kind of portable MRI scanner, comprising: MRI magnet; The RF coil of MRI, comprise: the ELR material of improvement, the RF coil of wherein said MRI: when during MRI process, when electric current being applied to the RF coil of MRI, induce magnetic field, wherein electromagnetic field makes some atom in the body of experimenter aim at, or when during MRI process, some atom becomes misalignment, sense the resonance signal launched by them, the ELR material of wherein said improvement allows the customized configuration of the RF coil of described MRI, allows the hole expanding described MRI magnet; And MRI detector, during MRI process, detect resonance signal to produce MRI image.
A kind of gradient coil of magnetic resonance imaging (MRI), comprise: the ELR material of improvement, wherein said MRI gradient coil conduction current to produce gradient fields during MRI process, and wherein said gradient fields makes some atom in the body of experimenter spin with different speed based on some atom described position in the body.
A kind of gradient coil of magnetic resonance imaging (MRI), comprise: nano wire, comprise the ELR material of improvement, wherein said nano wire conduction current to produce gradient fields during MRI process, and wherein said gradient fields makes some atom in the body of experimenter spin with different speed based on some atom described position in the body.
A kind of magnetic resonance imaging (MRI) device, comprises MRI magnet; The RF coil of MRI, for both one of: when during MRI process, when electric current being applied to the RF coil of MRI, induce magnetic field, wherein electromagnetic field makes some atom in the body of experimenter aim at, or when some atom becomes misalignment during MRI process, sense the resonance signal launched by them; And gradient coil, comprise: the ELR material of improvement, wherein said MRI gradient coil conduction current to produce gradient fields during MRI process, and wherein said gradient fields makes some atom in the body of experimenter spin with different speed based on some atom described position in the body; And MRI detector, detect the resonance signal sensed from the RF coil of MRI to produce MRI image.
A kind of radio frequency (RF) coil of magnetic resonance imaging (MRI), comprise: the ELR material of improvement, wherein during MRI process, described RF coil: when during MRI process, when electric current being applied at least one nanowire segment, induce magnetic field, wherein electromagnetic field makes some atom in the body of experimenter aim at, or when the atom that some is aimed at during MRI process becomes misalignment, sense by the resonance signal of some atomic emissions in the body of experimenter.
A kind of radio frequency (RF) coil of magnetic resonance imaging (MRI), comprise: the ELR material of improvement, wherein when being exposed to resonance signal during MRI process, resonance signal described in described RF coil transduces, being converted to by sensed resonance signal can be measured and be used for the alternating current of imaging.
A kind of radio frequency (RF) coil of magnetic resonance imaging (MRI), comprise: the ELR material of improvement, wherein said RF coil is electrically coupled to alternate current-changing source, wherein during MRI process, in response to described alternate current-changing source, described RF coil-induced go out electromagnetic field, the electromagnetic field induced makes some atom in the body of experimenter aim at, and when some atom described becomes misalignment, emission resonance signal subsequently, wherein said resonance signal can be detected and for imaging.
A kind of magnetic resonance imaging (MRI) device, comprising: MRI magnet; The RF coil of MRI, comprise: the ELR material of improvement, wherein during MRI process, RF coil: when during MRI process, when electric current being applied at least one nanowire segment, induce magnetic field, wherein electromagnetic field makes some atom in the body of experimenter aim at, or when the atom that some is aimed at during MRI process becomes misalignment, sense by the resonance signal of some atomic emissions in the body of experimenter; Gradient coil, wherein MRI gradient coil conduction current to produce gradient fields during MRI process, and wherein said gradient fields makes some atom in the body of experimenter spin with different speed based on some atom described position in the body; And MRI detector, detect the resonance signal sensed from the RF coil of MRI to produce MRI image.
the capacitor of the 5th chapter-formed by ELR material
This chapter of specification relates to Fig. 1-36 and Figure 37 A-B to Figure 43-B; Therefore all reference markers be included in this part relate to the element found in these accompanying drawings.
Describe the capacitor comprising the assembly formed by modification, with holes and/or other are new pole low resistance (ELR) material.In some instances, capacitor comprises the one or more plates formed by ELR material.In some instances, capacitor comprises two plates or element that are formed by ELR material and the dielectric be placed between each plate or each element.In some instances, film ELR material is used to form this capacitor.Pole low resistance is supplied to the electric current at the temperature place higher than the temperature normally relevant to high-temperature superconductor (HTS) electric current by ELR material, improves the operating characteristic of the capacitor at these higher temperature places, and other benefits.
In some instances, based on the type of material, ELR material application, adopt the size of the assembly of this ELR material, adopt the equipment of ELR material or the job requirement of machine etc. to manufacture ELR material.Therefore, during the Design and manufacture of capacitor, the material of the basic unit being used as ELR material can be selected based on various consideration and desired work and/or manufacturing characteristics and/or be used as the material of modified layer of ELR material.
Various equipment, application and/or system can use ELR capacitor described here.In some instances, tuning and other resonant circuits use ELR capacitor.In some instances, memory device uses ELR capacitor.In some instances, coupling element uses ELR capacitor.In some instances, pulse power system uses ELR capacitor.In some instances, sequential element uses ELR capacitor.In some instances, filter element uses ELR capacitor.
As said, some or all of modification, with holes and/or that other are new ELR material can be used by capacitor and relevant equipment and system.Figure 37 A-B shows the schematic diagram of the capacitor 3700 using ELR material.Described capacitor comprises the first plate 3710 or the first conducting element, the second plate 3712 or the second conducting element and the space of the first plate 3710 and the second plate 3712 being separated or gap 3715.
The voltage or the potential difference that are applied across the first plate 3710 and the second plate 3712 cause electrostatic field to occur in space 3715 between two plates.Electrostatic field storage power also produces power between each plate.With " electric capacity " of capacitor that farad is measured, be electric charge on each plate and the ratio of applied potential difference, or C=Q/V.This electric capacity depends on the distance between plate, and increases along with the reduction of the distance between described plate.
Although this capacitor 3700 does not comprise dielectric layer, in order to increase their electric capacity, a lot of capacitor uses dielectric layer.Figure 37 B-B shows the schematic diagram of the capacitor 3720 of the ELR film using modification.Capacitor 3720 comprises the first plate 3730, second plate 3732 and the dielectric between described first plate 3730 and the second plate 3732 or nonconducting layer 3735.In some instances, in order to increase the quantity of electric charge stored by capacitor, dielectric layer 3735 is formed by the material with high dielectric constant and/or high puncture voltage.
In some instances, dielectric layer 3735 is insulators.Example dielectric materials as dielectric layer 3735 comprises the dielectric of paper, plastics, glass, mica, pottery, electrolyte, oxide and/or other classifications 1 or classification 2.List below represents various capacitor/dielectric type, and it can use modification described here, with holes and/or that other are new ELR material, but other are fine certainly:
The capacitor of " gas-gap "-do not have dielectric layer, they have low dielectric loss usually.Gas-gap capacitor can be used as the tunable capacitor of resonance HF antenna, and other realize;
The capacitor of " pottery "-have ceramic dielectric layer, the vicissitudinous dielectric constant values of tool and dielectric loss.Example comprises C0G, NP0, X7R, X8R, Z5U and 2E6 capacitor.Filter, sequential element and crystal oscillator and other realizations can use ceramic capacitor;
The capacitor of " glass "-have glass dielectric layer, they are normally highly stable and reliable;
The capacitor of " paper "-have paper dielectric layer.Wireless device, power supply, motor and other realizations can use paper capacitor;
The capacitor of " Merlon "-have Merlon dielectric layer, they have low-temperature coefficient and aging well usually.Filter and other realizations can use polycarbonate capacitor;
The capacitor of " polyester fiber "-have PET film dielectric layer.Signal capacitor sum-product intergrator and other realizations can use polyester fiber capacitor;
The capacitor of " polystyrene "-have polystyrene dielectric layer.Polystyrene capacitor can be used as signal capacitor and other realize;
The capacitor of " polypropylene "-have polypropylene dielectric layer, they show low dielectric loss and high puncture voltage usually.Polypropylene capacitor can be used as signal capacitor and other realize;
The capacitor of " plastics "-have plastic dielectric layer, they comprise PTFE or " teflon " dielectric, and other;
" mica "-there is the capacitor of mica, such as silvered mica, dielectric layer.HF and VHFRF circuit and other realization can use mica condenser;
The capacitor of " electrolyte "-have oxide dielectric layers of being surrounded by dielectric solution, compared to other types, their per unit volumes have larger electric capacity usually.The electrolyte capacitance that can be ultracapacitor (ultracapacitor) and/or ultimate capacitor (supercapacitor) can with in circuit, such as power-supply filter, coupling capacitor, energy storage device and other realize.
The mechanical structure that " variable "-have changes the lap of the surface area of distance between plate or plate and/or the capacitor changed as variable capacitance (VARICAP) diode of its capacitance of the function of applied reverse biased, transducer such as microphone and other realizations can use them;
The capacitor of " vacuum "-have vacuum between conductive plate, they do not have dielectric loss, can self-healing (selfheal), and are variable and/or adjustable.They can be used in high power RF reflector and other realizations; And the type of other dielectric/capacitors is no longer specifically described at this.
Except the capacitor that two plates be separated by dielectric layer are formed, also have other modes forming capacitor.Such as, the region of the metallic conduction in the different layers of multilayer board or substrate can as the capacitor of high stable.In addition, capacitor can be formed as the various metallization patterns on substrate.Figure 37 C-B shows the schematic diagram of the substrate-based capacitor 3740 using ELR material.
This capacitor 3740 is formed on substrate 3745, and comprises first conducting element 3750 with the first different current-carrying parts 3755 and second conducting element 3760 with the second different current-carrying parts 3765.As shown in the figure, in the many electric fields produced between that capacitor 3740 can store in electric charge in described first current-carrying part 3755 and the second current-carrying part 3765.
Figure 37 D-B shows the schematic diagram of the MEMS type capacitor 3770 using ELR material.Capacitor 3770 is formed in or is attached to (not shown) on substrate, and comprises first conducting element 3780 with multiple first current-carrying part 3782 and have the second conducting element 3790 with isolated multiple second current-carrying part 3792 of multiple first current-carrying part 3782.As shown in the figure, the second conducting element 3790 can translationally move towards and/or away from described first conducting element 3780, due to movement, along with between respective current-carrying part area increase and/or reduce, increase and/or reduce the electric capacity between each element.In addition, can rotate relative to the first conducting element 3780, second conducting element 3790, due to rotate, along with between respective current-carrying part area increase and or reduce, increase and/or reduce the electric capacity between each element.
In some instances, by the hole in material, ELR material described herein carries and/or transmission charge.Therefore, in these examples, be used as the ELR material of conducting element can cause in the row be separated or part, the gathering of the electric charge in conducting element or plate corresponds to the hole in material usually.
Figure 38 A-B is the cross-sectional view that the online BA place of capacitor of Figure 37 B-B extracts.Capacitor 3800 comprises the first conducting element 3810a of modified layer 3812a having ELR material 3814a with holes and be bonded to ELR material 3814a with holes, and has ELR material 3814b with holes and be bonded to the second conducting element 3810b of modified layer 3812b of ELR material 3814b with holes.By dielectric layer 3820, first conducting element 3810a is separated with the second conducting element 3810b.
Apply potential difference between the first conducting element 3810a and the second conducting element 3810b after, when electric charge 3830 shifts to dielectric layer 3820, produce electric field between elements and in dielectric layer 3820.But because charge packet is contained in hole, they are gathered into the electric charge group 3830 be usually isolated from each other by the wall 3835 in the hole in ELR material 3814a.
Figure 38 B-B is the cross-sectional view that the online BB place of capacitor of Figure 37 B-B extracts.On the surface of modified layer 3840 or annex, or on the wall in hole or near, this group electric charge can form the bar of electric charge 3842, wherein separates this group electric charge by the wall 3844 in the hole of this material.Therefore, in response to the electric field in capacitor, in the conducting element of capacitor, the electric charge in ELR material can form bar and/or the group of electric charge.
In some instances, the ELR material of conducting element forming capacitor can show pole low resistance, flows through electric current with the temperature place between the transition temperature (such as ~ 80 to 135K) of traditional HTS material and room temperature (such as ~ 275K to 313K).In these examples, make the capacitor based on ELR of electricity container and/or the equipment based on ELR can comprise cooling system (not shown), such as refrigeration machine (cyrocooler) or cryostat, for being cooled to the critical temperature of the modification ELR material type used by capacitor by capacitor.Such as, cooling system can be capacitor to be cooled to the temperature being similar to liquid fluorine Leon, the system being cooled to temperature or other temperature discussed herein being similar to ice.That is, cooling system can be selected based on the type of the ELR material used in the capacitor based on ELR and/or the equipment based on ELR and structure.
As said, in some instances, owing to being formed the conducting element (such as, plate) of capacitor by modification ELR material, therefore it shows pole low resistance to carry electric current.These conducting elements can be formed by nano wire, band, paper tinsel and/or line.
In formation ELR wire, multiple ELR band or paper tinsel can clip together to form large scale wire.Such as, coil can comprise supporting construction and the one or more ELR that supported by supporting construction are with or paper tinsel.
Except ELR wire, capacitor can be formed by ELR nano wire.At the term of routine, nano wire has tens nanometer scale or less width or diameter, and the nanostructure of usual strainless length.In some cases, ELR material can be formed as the nano wire with 50 nano-widths and/or the degree of depth.In some cases, ELR material can be formed as the nano wire with 40 nano-widths and/or the degree of depth.In some cases, ELR material can be formed as the nano wire with 30 nano-widths and/or the degree of depth.In some cases, ELR material can be formed as the nano wire with 20 nano-widths and/or the degree of depth.In some cases, ELR material can be formed as the nano wire with 10 nano-widths and/or the degree of depth.In some cases, ELR material can be formed as the nano wire with 5 nano-widths and/or the degree of depth.In some cases, ELR material can be formed as having the nano wire being less than 5 nano-widths and/or the degree of depth.
Except nano wire, capacitor described herein and equipment can also use ELR to be with or paper tinsel.There is various production and manufacture the band of ELR material and/or the technology of paper tinsel.In some instances, this technology be included in be coated with buffering metal oxide flexible metal band on deposit YBCO or another kind of ELR material, formed coated conductor.During processing, such as by using rolling to assist biaxial texture (rolling-assisted, biaxially-textured) substrate (RABiTS) technique, texture can be introduced in metal tape self, or utilize Assisted by Ion Beam, such as by using ion beam assisted depositing (IBAD) technique, can be deposited on there being the ceramic resilient coating of texture to substitute in not textured alloy substrate.Adding of oxide layer prevents metal to be diffused into ELR material from band.Other technologies can utilize chemical vapour deposition (CVD) CVD technique, physical vapour deposition (PVD) (PVD) technique, atomic layer-layer molecular beam epitaxy (ALL-MBE) and other solution deposition techniques to produce ELR material.
Therefore, the ELR film of modification can be formed as band, paper tinsel, rod, bar, nano wire, film, other shapes or structure, and/or can by charge storage other geometries in conducting element such as plate.That is, although describe some the suitable geometries being suitable for some capacitors at this illustrate, other geometries many are also possible.Except the difference in the use of material thickness, different layers and other three-dimensional structures, these other geometries comprise, relative to different pattern, structure or the layout of length and/or width.
In some instances, can by the material type using the application type of ELR material to determine to be used as ELR material.Such as, some application can use the ELR material with BSCCOELR layer, and some application can use YBCO layer.That is, ELR material described herein can be formed as some structure (such as, band or nano wire), and is formed by some ELR material, and other factors.
When forming the capacitor based on ELR described herein, various manufacturing process can be used.In some instances, ELR nano wire conducting element is deposited on the substrate of location.In some instances, ELR band is placed or is fixed on substrate, non-conductive component and/or conducting element.It will be understood to those of skill in the art that when manufacturing and/or forming capacitor described herein, other manufacturing process can be used.
As discussed in this, much equipment and system can utilize, use and/or merge capacitor, and such as modification, with holes and/or ELR capacitor that other are new, it shows pole low resistance at high temperature or ambient temperature place.Lower part describes the equipment of some examples, system and/or application.It will be understood by those skilled in the art that other equipment, system and/or application also can use the ELR capacitor of modification.
In some instances, tuning or resonant circuit can use ELR-capacitor described herein.In the ordinary course of things, tuning circuit comprises capacitor and inductor with selection information in specific frequency band.Such as, radio receiver depend on variable capacitor with by radio tuning for frequency of radio station.
Figure 39-B shows the schematic diagram of the tuning or resonant circuit 3900 with ELR capacitor 3910 and another assembly such as inductor 3920.Analog circuit (being such as used in the circuit in signal processing applications) can use capacitor described here.These circuit can comprise capacitor, together with other assemblies (such as, lc circuit, rlc circuit etc.).In some instances, circuit 3900 can be emphasize or filter out the tuning of signal frequency or resonant circuit.In some instances, in extensive power application, circuit 3900 can remove residual honeybee sound.In some instances, circuit 3900 can be used in the tuning circuit in radio reception and broadcast.It will be understood by those skilled in the art that in other application a lot of that can here do not describe and implement this circuit 3900.
In some instances, stored energy assembly can use the capacitor based on ELR described herein.Such as, when disconnecting from charging circuit, capacitor storage of electrical energy, shows the characteristic similar with those batteries, and is usually used in keep supply of electric power in electronic device when battery charges, etc.
Figure 40-B shows the schematic diagram of the memory element 4000 with ELR capacitor.Memory element 4000 represents ultracapacitor, and comprises the first electrode 4010, second electrode 4020 and separating layer.The first electrolyte 4045 comprising electric charge 4040 separates with the second electrolyte 4055 comprising electric charge 4050 by separating layer 4030.Use the material based on ELR described herein such ultracapacitor can stored energy for various application, such as electric automobile and power grid application, etc.
In some instances, coupling assembly can use the capacitor based on ELR described herein.Such as, the capacitor based on ELR can be conducive to the capacitive coupling in circuit, and capacitor is by AC signal thus, but stops DC signal.As another example, should can as the decoupling capacitor of the noise suppressed between circuit element or transient signal based on capacitor of ELR.
Figure 41-B shows coupling element 4100 schematic diagram with ELR capacitor 4130 and resistor 4140.Coupling element 4100 receives input signal 4110, and adjustment member based on the input signal of the time constant of the time relative signal making capacitor charge, and exports the signal 4120 after adjustment.Use such coupling circuit of the capacitor based on ELR described herein can by the audio signal in radio system, etc.
In some instances, pulse power system can use the capacitor based on ELR described herein.Such as, large, special construction, low induction coefficient, high-tension Capacitor banks may be used for for pulse power application provides large pulse current, such as electro-magnetic forming, Marx generator, pulse laser, pulse forming network, radar, nuclear fusion (fusion), particle accelerator, track rifle, coilgun and other application.
Figure 42-B shows the schematic diagram of the pulse power system 4200 with ELR capacitor.Pulse power system 4200 comprises the Capacitor banks 4100 formed by multiple capacitor 4220, upon discharging, power pulse is supplied to the application of various output 4230.Such as, system 4200 can be MarxBank, wherein capacitor (such as based on the capacitor of ELR) and medium voltate charged in parallel, and by triggering high voltage transfer to the gap discharged in series of load.In some instances, sequential element can use the capacitor based on ELR described herein.
Figure 43-B shows the schematic diagram of sequential element 4310, and pulse train is passed to the element of the unstable state multi-frequency generator 4310 of loud speaker 4320 by the capacitor 4330 be such as configured to pass based on ELR.Sequential element 4300 comprises 555 timers, based on the capacitor 4330 of ELR and loud speaker 4320.When blocking DC signal, capacitor 4330 can by stable AC signal transmission to loud speaker, etc.
Certainly, other system and equipment can use the capacitor based on ELR described herein.Such as, power regulating system, power factor calibration system, noise filter, buffer, motor starter, signal processor, transducer, measuring equipment, touch input device, man-machine interface element, neural net etc.
In some implementations, the capacitor comprising modification ELR material can describe as follows:
A kind of capacitor, comprising: the first plate formed by modification ELR material; With the second plate formed by modification ELR material; Wherein said modification ELR material comprises the modified layer of one or more operating characteristic of ELR material layer and change ELR material layer.
Form a method for capacitor, described method comprises: the first plate forming modification ELR material; Form the second plate of modification ELR material; And locate the first plate in a distance with the second plate.
A kind of capacitor, comprising: pole low resistance (ELR) element of the first modification; And the second modification ELR element, itself and the first modification ELR element are spaced apart.
A kind of capacitor, comprising: the first plate formed by modification ELR material; The second plate formed by modification ELR material; And the dielectric be positioned between the first plate and the second plate; Wherein said modification ELR material comprises the modified layer of one or more operating characteristic of ELR material layer and change ELR material layer.
Form a method for capacitor, described method comprises: the first plate forming modification ELR material; Form the second plate of modification ELR material; Location and the second plate the first plate in a distance; And dielectric is set between the first plate and the second plate.
A kind of capacitor, comprising: the first modification pole low resistance (ELR) element; Second modification ELR element, spaced apart with the first modification ELR element; And dielectric substance, be positioned between the first modification ELR element and the second modification ELR element.
A kind of capacitor, comprising: substrate; Deposit to the first conducting element formed on described substrate and by modification ELR material; Be adjacent to described first conducting element and deposit to the second conducting element formed on described substrate and by modification ELR material; And wherein modification ELR material comprises the modified layer of one or more operating characteristic of ELR material layer and change ELR material layer.
Form a method for capacitor, described method comprises: deposit on substrate by the first conducting element formed by modification ELR material; And be adjacent to described first conducting element, the second conducting element formed by modification ELR material is deposited on described substrate.
A kind of capacitor, comprising: deposit to the first modification pole low resistance (ELR) element on substrate; And be adjacent to the second modification ELR element on described first modification ELR element deposition to substrate and spaced apart with described first modification ELR element.
A kind of capacitor, comprising: the first conducting element formed by modification ELR material; Formed by modification ELR material and be configured to the second conducting element relative to described first conducting element movement; And wherein said modification ELR material comprises the modified layer of one or more operating characteristic of ELR material layer and change ELR material layer.
A kind of capacitor, comprising: the first modification pole low resistance (ELR) element; Second modification ELR element; And positioning component, wherein said positioning component is configured to move described second modification ELR element relative to described first modification ELR element.
Be used in based on the conducting element in the capacitor of MEMS, comprise: the ground floor of ELR material; And the material modified second layer of the phonon characters of change ELR material.
A kind of circuit, comprising: inductor; And capacitor, wherein said capacitor comprises: the first conducting element formed by modification ELR material; The second conducting element formed by modification ELR material.
Be used in the capacitor in signal handling equipment, comprise: the first conducting element formed by modification ELR material; And the second conducting element to be formed by modification ELR material; Wherein said modification ELR material comprises the modified layer of one or more operating characteristic of ELR material layer and change ELR material layer.
Be configured to, with a capacitor for the inductor positive energy exchange in circuit, comprising: be formed in the first conducting element on substrate; With to be formed on substrate and to be positioned the second conducting element of contiguous described first conducting element; Wherein said first conducting element and described second conducting element show pole low resistance to charge at normal pressure and higher than the temperature place of 150K.
A kind of ultracapacitor, comprising: the first conducting element formed by modification ELR material; The second conducting element formed by modification ELR material; Separating layer between described first conducting element and described second conducting element.
A kind of ultracapacitor, comprising: the first conducting element formed by ELR material with holes; The second conducting element formed by ELR material with holes; Separating layer between described first conducting element and described second conducting element.
A kind of coupling circuit, comprising: resistor; And capacitor, wherein said capacitor comprises: the first conducting element formed by modification ELR material; And the second conducting element to be formed by modification ELR material; Wherein said modification ELR material comprises the modified layer of one or more operating characteristic of ELR material layer and change ELR material layer.
A kind of coupling circuit, comprising: resistor; And capacitor, wherein said capacitor comprises: the first conducting element formed by ELR material with holes; And the second conducting element to be formed by ELR material with holes; Wherein said ELR material with holes comprises the modified layer of one or more operating characteristic of ELR material layer and change ELR material layer.
A kind of pulse power system, comprising: Capacitor banks, each of each capacitor in wherein said Capacitor banks comprises: the first conducting element formed by modification ELR material; And the second conducting element to be formed by modification ELR material; Wherein said modification ELR material comprises the modified layer of one or more operating characteristic of ELR material layer and change ELR material layer.
A kind of pulse power system, comprising: Capacitor banks, each of each capacitor in wherein said Capacitor banks comprises: the first conducting element formed by ELR material; And the second conducting element to be formed by ELR material; Wherein said ELR material comprises the modified layer of one or more operating characteristic of the ELR material layer with holes ELR material layer with holes with change.
A kind of transducer, comprising: capacitor, wherein said capacitor comprises: the first conducting element formed by modification ELR material; And the second conducting element to be formed by modification ELR material; Wherein said modification ELR material comprises the modified layer of one or more operating characteristic of ELR material layer and change ELR material layer.
A kind of transducer, comprising: capacitor, wherein said capacitor comprises: the first conducting element formed by ELR material; And the second conducting element to be formed by ELR material; ELR material described in it comprises the modified layer of one or more operating characteristic of the ELR material layer with holes ELR material layer with holes with change.
the inductor of the 6th chapter-formed by ELR material
This chapter of specification relates to Fig. 1-36 and Figure 37-C to Figure 43-C; Therefore all reference markers be included in this part relate to the element found in these accompanying drawings.
Describe the inductor comprising the assembly formed by pole low resistance (ELR) material, such as air-core or core inductor, this pole low electrical resistant material is such as modification ELR material, ELR material with holes and/or other new ELR materials.In some instances, the inductor nano wire coil that comprises core and formed by ELR material.In some instances, the coil that inductor comprises core and formed by ELR material, such as ELR band or paper tinsel.In some instances, film ELR material is used to form inductor.For at the electric current higher than the temperature place with the normal associated temperature of traditional high-temperature superconductor (HTS), ELR material provides and/or shows pole low resistance, improves the operating characteristic of inductor at these higher temperature places, and other benefits.
In some instances, based on the type of material, ELR material application, adopt the size of the assembly of this ELR material, adopt job requirement of the equipment of ELR material, system and/or machine etc. to manufacture ELR material.Similarly, during the Design and manufacture of inductor or inductor based device, the material of the basic unit being used as ELR assembly can be selected based on various consideration and desired work and/or manufacturing characteristics and/or be used as the material of modified layer of ELR assembly.
Various equipment, application and/or system can use modification, the with holes and/or new inductor based on ELR.In some instances, tuning or resonant circuit and related application use ELR inductor.In some instances, transformer and related application use ELR inductor.In some instances, energy storage device and related application use ELR inductor.In some instances, current limiting device (such as demand limiter fault current limiter) and related application use ELR inductor.
Figure 37 C shows the schematic diagram by modification, with holes and/or that new ELR material is formed air-cored inductor 3700.Inductor 3700 comprises coil 3710 and air-core 3720.When coil 3710 carries electric current (such as, the right direction towards page), in air-core 3720 (that is, in the region that core will be found), produce magnetic field 3730.Form coil by ELR material at least partly, such as, there is ELR material base layer and the ELR film being formed in the modified layer in described basic unit.Various suitable ELR film is described in detail at this.
Voltage can be applied to ELR coil 3710 by battery or other power supply (not shown), and electric current is flowed in coil 3710.For in the temperature higher than those temperature be used in traditional HTS material (such as room temperature or ambient temperature (such as, at about 21 DEG C)) flowing of the electric current at place, the coil 3710 that ELR material is formed provides very little resistance or does not provide resistance.In nucleus 3720, the current induced magnetic field in coil, this can be used for transfer energy, restriction energy etc.
Because inductor 3700 comprises the coil 3710 formed by pole low electrical resistant material (i.e. modification ELR film), inductor can be similar to desirable inductor and work, wherein there is traditional conductive coil (such as because winding or series resistance are present in usually, copper coil) inductor in, no matter whether electric current flows through coil 3710, coil 3710 all shows very little loss or does not have loss.That is, inductor 3700 can show very high quality (Q) factor (such as, approach infinity), and quality factor are the ratio of its induction reactance to the impedance at given frequency place, or Q=induction reactance/impedance.
In some instances, for the flowing of the electric current at the temperature place between the transition temperature (such as, at about 80 ~ 135K) and room temperature (such as, at about 294K) of traditional HTS material, ELR loop provides pole low resistance.In these examples, inductor can comprise the cooling system (not shown) of such as refrigeration machine or cryostat, the critical temperature of the type of the ELR material used for coil 3710 being cooled to this coil 3710.Such as, cooling system can be the system that coil 3710 can be cooled to the temperature being similar to liquid fluorine Leon, the temperature being similar to ice or other temperature discussed herein.That is, cooling system can be selected based on the type of the ELR material used in coil 3710 and structure.
In some instances, air-core 3720 does not comprise any additional materials, and inductance 3700 is the coils not having physical core, such as independently coil (coil such as, shown in figure).In some instances, air-core 3720 is formed by the nonmagnetic substance (not shown) of such as plastics or ceramic material.Material or the shape of core can be selected based on various factors.Such as, select the core material with the magnetic permeability higher than the magnetic permeability of air usually just to increase the density in produced magnetic field 3730, and thus increase the inductance of inductor 3700.In another example, by expecting to reduce the core loss in frequency applications, can control to select core material.It will be understood by those skilled in the art that to obtain some character expected and/or operating characteristic, can this core be formed by multiple different materials and this core can be formed as multiple difformity.
As is known in the art, the configuration of coil 3710 can affect some operating characteristic, such as inductance.Such as, length of the number of turn of coil, the cross-sectional area of coil, coil etc., can affect the inductance of inductor.As can be seen here, in order to obtain some operating characteristic (such as inductance value), although illustrate in one configuration, inductor 3700 can be configured in many ways, to reduce some less desirable impact (such as, skin effect, proximity effect, parasitic capacitance) etc.
In some instances, coil 3710 can comprise many circles parallel to each other.In some instances, described coil can comprise by several circles reeled each other with different angles.Therefore, coil 3710 can be formed as various different configuration, such as honeycomb, basket braiding (basket-weave) pattern, to each other with the winding of the waveform winding of the crisscross continuous wire turn of various angle, cobweb pattern or circumference ratio, wherein form described coil by the planar spiral winding be spaced, insulated from each other with the twisted wire reducing electric arc resistance as each strand, etc.These technology can be adopted to improve self-resonant frequency and the quality factor (Q) of inductor, and other benefits.
Except air-cored inductor, the such as core inductor of inductor 3800 also can be used in this modification discussed, with holes and/or new ELR material.Figure 38-C shows the schematic diagram of the core inductor 3800 using ELR material.Inductor 3800 comprises coil 3810 and magnetic core 3820, the core such as formed by ferromagnetism or ferromagnetic material.Be similar to the inductor 3700 in Figure 37-C, when coil 3810 carries electric current, in core 3820, produce magnetic field 3830.Form coil by ELR film at least partly, such as, there is ELR material base layer and the film being formed in the modified layer in described basic unit.Various applicable ELR film is described in detail at this.For the temperature higher than those temperature be used in traditional HTS material (such as room temperature or ambient temperature (such as, at about 21 DEG C)) flowing of the electric current at place, the coil 3810 formed by ELR film provides very little resistance or does not provide resistance.In core 3820, the current induced magnetic field 3830 in coil, this may be used for stored energy, transfer energy, restriction energy etc.
Because the magnetic permeability of the magnetic material in the magnetic field produced 3830 is higher than the magnetic permeability of air, the magnetic core 3820 formed by ferromagnet or ferromagnetic material increases the inductance of inductor 3800, and is therefore more conducive to the formation in magnetic field 3830 due to the magnetization of magnetic material.Such as, magnetic core can increase the inductance of 1000 times or more the factors.
In magnetic core 3820, this inductor 3800 can use various different material by magnetic core.In some instances, magnetic core forms magnetic core 3820 by the ferromagnetic material of such as iron.In some instances, magnetic core forms magnetic core 3820 by such as ferritic ferromagnetic material.In some instances, magnetic core forms magnetic core 3820 by the stacked magnetic material of such as silicon steel laminations, metal glass or other materials.It will be understood by those skilled in the art that and can use other materials according to the needs of inductor 3800 and requirement.
In addition, magnetic core 3820 (and therefore, inductor 3800) various different shape can be configured to.In some instances, magnetic core 3820 can be bar or cylinder.In some cases, magnetic core 3820 can be annular or anchor ring.In some cases, magnetic core 3820 can be moveable, makes inductor 3800 realize variable inductance.It will be understood by those skilled in the art that and can use other shapes and configuration according to the needs of inductor 3800 and requirement.Such as, magnetic core 3820 can be constructed to limit various shortcoming, the core loss such as produced due to vortex flow and/or magnetic hysteresis and/or nonlinear inductance, etc.
Therefore, in some instances, modification ELR material and/or assembly (the LER film of such as modification) is used to form the coil 3710 of inductor 3700 or the coil 3810 of inductor 3800, by for the electric current in coil, reduce or eliminate resistance, add the Q factor of inductor, and other benefits.
As the described herein, in some instances, because of by ELR material, such as modification ELR material, ELR material with holes, new ELR material etc. form the coil of inductor, and therefore the coil of inductor shows pole low resistance to carry electric current.Figure 39 A-C shows the schematic diagram of the inductor 3900 using ELR wire.Inductor 3900 comprises the coil 3902 being formed as ELR wire, and wherein by ELR assembly described herein, such as modification ELR film, forms this ELR wire.
In formation ELR wire, multiple ELR band or paper tinsel can be clamped together to form large-sized wire.Such as, coil can be comprised supporting construction and is with or paper tinsel by one or more ELR that supporting construction supports.
Except ELR wire, inductor can be formed by ELR nano wire.In traditional term, nano wire has tens nanometer scale or less width or diameter, and the nanostructure of usual strainless length.In some cases, ELR material can be formed as the nano wire with 50 nano-widths and/or the degree of depth.In some cases, ELR material can be formed as the nano wire with 40 nano-widths and/or the degree of depth.In some cases, ELR material can be formed as the nano wire with 30 nano-widths and/or the degree of depth.In some cases, ELR material can be formed as the nano wire with 20 nano-widths and/or the degree of depth.In some cases, ELR material can be formed as the nano wire with 10 nano-widths and/or the degree of depth.In some cases, ELR material can be formed as the nano wire with 5 nano-widths and/or the degree of depth.In some cases, ELR material can be formed as having the nano wire being less than 5 nano-widths and/or the degree of depth.
Except nano wire, inductor described herein and equipment can also use ELR to be with or paper tinsel.Figure 39 B-C shows the schematic diagram of the inductor 3910 using ELR band or paper tinsel.Inductor 3910 comprises core 3912, such as unshakable in one's determination and be with the coil 3914 formed by ELR.
Exist and produce and manufacture the band of ELR material and/or the multiple technologies of paper tinsel.In some instances, this technology be included in be coated with buffering metal oxide flexible metal band on deposit YBCO or another ELR material, formed " coated conductor ".During processing, such as by using rolling to assist biaxial texture (rolling-assisted, biaxially-textured) substrate (RABiTS) technique, texture can be incorporated in metal tape self, or adopt the auxiliary of ion beam, such as by using ion beam assisted depositing (IBAD) technique, can be deposited on there being the ceramic resilient coating of texture to substitute in not textured alloy substrate.Adding of oxide layer prevents metal to be diffused into ELR material from band.Other technologies can utilize chemical vapour deposition (CVD) CVD technique, physical vapour deposition (PVD) (PVD) technique, atomic layer-layer molecular beam epitaxy (ALL-MBE) and other solution deposition techniques to produce ELR material.
In some instances, film inductor can use ELR assembly described here.Figure 39 C-C shows and uses ELR film assembly, the schematic diagram of the inductor 3920 of such as modification, with holes and/or new ELR assembly.Inductor 3920 comprises the ELR loop 3922 be formed on printed circuit board (PCB) 3924 or other suitable substrates (such as, LaSrGaO), and optional magnetic core 3926.According to the use equipment of inductor or the needs of system, this coil 3922 can be formed as various configuration and/or pattern, wherein this coil 3922 can be etched the modification ELR film entering into plate 3924 or substrate, or is positioned at the nano wire on substrate or at substrate place.In addition, as shown in the figure, optional magnetic core 3926 can be entered into plate 3924 by etching or can be positioned at the top of coil 3922 and/or the plane heart (not shown) of below.
Therefore, ELR material can be formed as wire, band, paper tinsel, rod, bar, nano wire, film, other are curling/spiral-shaped, structure and/or can move or carry the geometry of electric current to another point from any in order to produce magnetic field.That is, although describe some the suitable geometries being suitable for some inductors at this illustrate, other geometries many are also possible.Except the difference in the thickness of material, the use of different layers and other three-dimensional structures, these other geometries comprise relative to the different pattern of length and/or width, configuration or layout.
In some instances, can determine to be used in the material type in ELR material by the type of the application using ELR material.Such as, some application may use BSCCOELR layer, and other application can use YBCOELR layer.Namely, ELR material described herein can be formed as certain structure (such as, wire, band, paper tinsel, film and/or nano wire), and based on using the machine of this ELR material or the type of assembly and other factors to form ELR material described herein by specific material (such as YBCO or BSCCO).
In manufacture inductor such as inductor 3900,3910 and/or 3920, various technique can be used.In some instances, formed, keep, fix, receive and/or location core.Core can adopt various shape or configuration.The configuration of example comprises cylindrical bar, single " I " shape, " C " or " U " shape, " E " shape, two " E " shape, tank shape, toroidal, annular or pearl shape, planar shaped etc.This core can be formed by various non magnetic and magnetic material.Examples material comprises iron or soft iron, silicon steel, various stacking material, silicon alloy, carbonyl iron, iron powder, ferrite ceramics, the nature of glass or amorphous metal, pottery, plastics, metal glass, air etc.
In addition, the coil configuration of the coil such as formed by ELR nano wire, band or film is desired shape or pattern, and be coupled to the core that formed or keep.In some instances, there is no core, and the ELR nano wire of modification is configured to desired shape or pattern.In some instances, the ELR nano wire coil of modification is directly etched on a printed circuit or is formed or etch in integrated circuit, and by planar magnetic core location relative to etched coil.It will be understood by those skilled in the art that when manufacturing and/or forming inductor described herein, other manufacturing process can be used.
As discussed in this, much equipment and system can utilize, use and/or comprise inductor, such as modification, with holes and/or new ELR inductor, at high temperature or ambient temperature place, such as between 150K to 313K or higher than the temperature place of 313K, this inductor shows pole low resistance.That is, any equipment of the energy be stored in the magnetic field produced by electric current or system is in fact used can to comprise ELR inductor described herein.Such as, transmit, conversion and/or the system of stored energy, information and/or object can use ELR inductor described here.Lower joint describes the equipment of some examples, system and/or application.It will be understood by those skilled in the art that other equipment, system and/or application also can use ELR inductor described here.
In some instances, analog circuit (being such as used in the circuit in signal processing applications) can use inductor described herein.Figure 40-C shows the schematic diagram of tuning or the resonant circuit 4000 and capacitor 4020 had based on the inductor 4010 of ELR.Such circuit can comprise inductor, together with other assemblies (such as, lc circuit, rlc circuit etc.).In some instances, circuit 4000 can be the tuning or resonant circuit of amplification and/or deamplification frequency.In some instances, the remaining honeybee sound (such as, by filtering out the signal of 60Hz and relevant harmonic wave) of this circuit 4000 can be removed in extensive power application.In some instances, circuit 4000 can be used in the tuning circuit in radio reception and broadcast.It will be understood by those skilled in the art that in other application a lot of can not described at this and implement this circuit 4000.
Use the pole low electrical resistant material of all modification ELR materials as the described herein, multiple advantage and benefit can be provided to circuit 4000.Such as, have and be used in magnetometer (such as, the circuit of the ELR inductor SQUID) can enable magnetometer measure very little magnetic field (such as, the magnitude of a flux quantum), and other benefits, and do not rely on the cooling system of the costliness of the typical magnetometer using traditional HTS superconducting component.
In some instances, transformer can use inductor described herein with other energy trasfer equipment and system.Figure 41-C shows the schematic diagram of the transformer 4100 with ELR inductor.Transformer 4100 comprises magnetic core 4110, has the armature winding 4120 of the armature winding number of turn 4125 and has the secondary winding 4130 of secondary winding turns 4135.Armature winding 4120 and secondary winding 4130 is formed, such as modification ELR nano wire by ELR material.In some instances, transformer 4100 can be the part of utility network.In some instances, transformer 4100 can be promote and/or reduce the application of service voltage and the part of other electronic equipments during operation.In some instances, transformer 4100 can be signal or audio frequency transformer.It will be understood by those skilled in the art that in other application a lot of and equipment can not described at this and implement this transformer 4100.
For transformer 4100 and/or various application, use the pole low electrical resistant material of all modification ELR materials as the described herein, various advantage and benefit can be provided.Such as, in coil, use the transformer of modification ELR material to show less resistance loss, by minimizing the energy loss in transformer, this can affect job costs widely, and other benefits, avoid the problem relevant to traditional superconductor simultaneously, such as, due to the high cost that the cooling system of costliness produces, and other problems.
In some instances, such as superconduction magnetic energy stores the energy storage device of (SMES) system and other magnetic storage systems, can use ELR inductor described herein.Figure 42-C shows the schematic diagram of the energy storage system 4200 with ELR inductor.Described energy storage system 4200 comprises the memory module 4210 with inductor coil 4215 or multiple coil and the power regulating system 4220 with anti-phase-rectifier 4225.Memory module 4210 stores the energy in the magnetic field produced by inductor 4215, forms this inductor 4215 by modification ELR material.Power regulating system 4220 can receive the energy from memory module 4210, regulates the energy (such as, being AC electric current by stored DC current conversion) received, and regulated energy is supplied to each provenance, such as supply unit 4230.It will be understood by those skilled in the art that can here not describe in other application a lot of and equipment and implement energy storage system 4200.
For energy storage system 4200 and various application, use the pole low electrical resistant material of all modification ELR materials as the described herein, various advantage and benefit can be provided.Such as, compared to other energy storage systems, the energy stored that traditional SMES system loss is minimum, but the cost relevant to the temperature place high-temperature superconductor in traditional SMES system being remained on liquid nitrogen magnitude and other problems prevent widely using of they, and other problems.On the other hand, the ELR inductor of modification described herein provide with benefit like traditional SMES system class (such as, little energy loss), because they show ELR characteristic at very high temperature place, arbitrary place such as between the temperature to room temperature of liquid fluorine Leon, or higher temperature place, thus not relevant to traditional SMES system problem (such as, the cost of refrigeration machine).
In some instances, electrical power transmission system can use ELR material described herein.Figure 43-C shows the schematic diagram of demand limiter current limiting system 4300 (such as having the fault current limiter (FCL) of ELR inductor).Current limiting system comprises the demand limiter 4310 be made up of ELR inductor 4315.The demand limiter 4310 of such as series resistance limiter is located between online 4320 and load 4330, and absorbs most of energy between resistor 4330, age at failure in system 4300 and as trigger winding by fault being diverted to.It will be understood by those skilled in the art that electrical power transmission system can realize the ELR inductor not in Figure 43-C in specifically described other application a lot of and equipment.
For electrical power transmission system and various application, use all modifications as the described herein, the pole low electrical resistant material of with holes and/or new ELR material, multiple advantage and benefit can be provided.Such as, period ELR inductor of nonserviceabling can play fault current limitation effect in systems in which, and because for the electric current in system, they show pole low resistance, therefore during normal operating conditions, impedance is not increased to system, and other benefits.
In some instances, some or all in system described herein and equipment can use low cost cooling system in the application, and wherein at the temperature place lower than ambient temperature, the specific ELR material list that this application uses reveals pole low resistance.As discussed in this, in these examples, this application can comprise cooling system (not shown), such as ELR inductor is cooled to be similar to liquid fluorine Leon temperature, be cooled to the temperature that is similar to ice or the system in these other temperature discussed.The type of the ELR material that the inductor that can use based on this application and/or this application uses and structure, select cooling system.
Except system described herein, equipment and/or application, those skilled in the art will recognize that, comprise the other system of inductor, equipment and application and can use modification described herein, with holes and/or new ELR inductor.
In some implementations, the inductor comprising modification ELR material can describe as follows:
A kind of inductor, comprising: air-core; Pole low resistance (ELR) element with modification, is configured to the coil shape surrounding described air-core at least in part; Wherein formed the ELR element of described modification by modification ELR film, the ELR film of this modification has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
A kind of device, comprising: substrate; Be embedded into the coil in substrate; And first magnetic core, be positioned on the surface of described substrate; And cooling package, be configured to keep embedding coil in the substrate at the temperature place of the environment temperature lower than substrate; Wherein said coil comprises the Part II of the resistance of the Part I with pole low resistance (ELR) material and the reduction ELR material being bonded to Part I.
A kind of device, comprising: magnetic core; And three dimensional coils, be wrapped at least partly around magnetic core; Wherein said three dimensional coils comprises the Part II of the resistance of the Part I with pole low resistance (ELR) material and the reduction ELR material being bonded to Part I.
A kind of inductor, be configured to be placed between load and circuit, this inductor comprises: the ELR material of modification, has the ground floor formed by ELR material and the second layer formed by the material of the resistance changing described ELR material; Wherein said inductor configuration is the not block current flow when the normal load level by inductor conducts, and when the load fault level by inductor conducts block current flow.
A kind of energy storage system, comprising: memory module, and wherein said memory module comprises and to be formed by modification ELR film and to be configured to the inductor of stored energy in the magnetic field produced by inductor; Power adjusting component, wherein said power adjusting component is configured to regulate the energy received from memory module; And power supply module, wherein said power supply module is configured to regulated energy to be supplied to recipient.
A kind of inductor, comprising: substrate; And modification pole low resistance (ELR) film formed on the surface of a substrate; Wherein said modification ELR film comprises the ground floor that is made up of ELR material and by the material modified second layer being bonded to ground floor ELR material.
A kind of transformer, comprising: primary structure, wherein said primary structure comprises: the first magnetic core; First modification pole low resistance (ELR) element, is configured to have the number of turn of the first quantity and surrounds the coil shape of described magnetic core at least in part; And secondary structure, wherein said secondary structure comprises: the second magnetic core; Second modification pole low resistance (ELR) element, is configured to have the number of turn of the second quantity and surrounds the coil shape of described magnetic core at least in part; Wherein form the first and second modification ELR elements by the ELR film of modification, the ELR film of described modification has the ground floor that is made up of ELR material and by the material modified second layer formed being bonded to ground floor ELR material.
Be used in the inductor in signal handling equipment, comprise: magnetic core; And three dimensional coils, be wrapped in around described magnetic core at least partly; Wherein said three dimensional coils comprises the Part II of the resistance of the Part I with pole low resistance (ELR) material and the reduction ELR material being bonded to Part I.
the transistor of the 7th chapter-formed by ELR material
This chapter of specification relates to Fig. 1-36 and Figure 37-D to Figure 44-D; Therefore all reference markers be included in this part relate to the element in these accompanying drawings.
Describe the transistor and other similar devices, such as logical device that comprise the assembly formed by modification pole low resistance (ELR) and/or ELR material with holes.As discussed in this, at high temperature place, such as, higher than the temperature of 150K, at environment or normal pressure place, ELR material list modification and/or with holes reveals the very high conductance of extremely low resistance relative to electric charge (such as, the flowing of electronics) and/or electric charge.
In some instances, this equipment comprises the knot formed by semiconductor element and ELR element.Such as, the equipment of this ELR element-semiconductor junction can be used to comprise Josephson junction, bipolar junction transistor, field-effect transistor (FET), amplifier, switch, gate, microprocessor element, microprocessor, etc.
In some instances, based on the type of material, modification ELR material application, use the size of the assembly of ELR material and/or equipment, use the assembly of ELR material and/or the need of work of equipment etc. to manufacture ELR material.Such as, during the Design and manufacture of transistor, can based on various consideration and desired work and/or manufacturing characteristics, the material of the material selecting the basic unit being used as ELR material base electrode and/or the modified layer being used as ELR material base electrode.
Therefore, in some instances, because the flowing of the conducting element non resistance electric current in equipment, relative to traditional equipment, the equipment of use ELR material-semiconductor junction can perform faster and more reliable, etc.In addition, equipment can be designed as has less element, and it can reduce and manufacture relevant cost, etc.
As the described herein, transistor and relevant device and system can use some or all of modification, with holes and/or that other are new ELR material, wherein said transistor and relevant device and system use knot, the knot such as formed by least one conducting element and at least one semiconductor.
Figure 37-D shows the schematic diagram of pole low resistance (ELR) knot between element and semiconductor.Knot 3700 comprises element 3710 based on ELR and semiconductor 3720.Semiconductor 3720 can be formed by the various different known semiconductor material of such as silicon, GaAs (GaAs) etc.
In some instances, equipment 3705 can use knot 3700.This ELR material-semiconductor junction 3700 can in conjunction with based on the electronic device of ELR and semi-conductor electronic device.Such as, tie 3700 and can work that quick single magnetic flux logic (RSFL) circuit is attached to semiconductor circuit.That is, tie the part that 3700 can be Josephson's field-effect transistor (JoFET) or other transistors depending on Josephson effect, current flowing is between two weak coupling ELR elements thus.
Figure 38-D shows the schematic diagram of the Josephson junction 3800 utilizing one or more ELR element.Josephson junction 3800 comprises the ELR element 3810 being coupled to the 2nd ELR element 3830 by semiconductor 3820.The relative size of element can change according to application.That is, in some cases, semiconductor 3820 can be formed by relative to ELR element 3810 and/or the less thickness of ELR element 3830 or other geometries.In addition, the certain thickness different by the thickness and/or other geometries from semiconductor 3820 and/or ELR element 3830 or other geometries ELR element 3810 can be formed.
Because Josephson junction 3800 uses semiconductor 3830 as " insulator " between an ELR element 3810 and the 2nd ELR element 3830, therefore this knot can as single-electronic transistor, because the switch events at knot place is relevant to the measurement of single flux quantum, therefore this transistor can perform accurate measurement, etc.
Such as, Josephson junction 3800 can be used in Rapid-single-flux-quantum (RSFQ) assembly as quantum bit, is used in superconducting tunnel junction (STJ) detector and/or other application as probe assembly.
In some instances, for the temperature between the transition temperature (such as ~ 80 to 135K) and ambient temperature (such as ~ 275K to 313K) of traditional HTS material, such as between 150K and 313K or the flowing of the electric current at higher temperature place, the ELR material in knot 3700,3800 can show pole low resistance.In these examples, the equipment based on ELR of ELR element and/or use ELR element can use cooling system (not shown), such as refrigeration machine or cryostat, for being cooled to the critical temperature of the type of the modification ELR material of equipment use by ELR element.Such as, cooling system can be ELR element can be cooled to the boiling point being similar to freon temperature, be similar to the fusing point of water temperature, lower than around or surround ELR element or the temperature of relevant device or the system in these other temperature discussed.That is, can based on ELR element and/or based on the equipment of ELR in the type of ELR material that uses and structure select cooling system.
As the described herein, in some instances, for electric charge, pole low resistance is shown based on the conducting element formed by ELR material in the knot equipment of ELR.These conducting elements can be formed by nano wire, band or paper tinsel, wire etc.
There is various production and manufacture the band of ELR material and/or the technology of paper tinsel.In some instances, this technology be included in be coated with buffering metal oxide flexible metal band on deposit YBCO or another ELR material, formed " coated conductor ".During processing, such as by using rolling to assist biaxial texture (rolling-assisted, biaxially-textured) substrate (RABiTS) technique, texture can be incorporated in metal tape self, or employing Assisted by Ion Beam, such as by using ion beam assisted depositing (IBAD) technique, can be deposited on there being the ceramic resilient coating of texture to substitute in not textured alloy substrate.Adding of oxide layer prevents metal to be diffused into ELR material from band.Other technologies can utilize chemical vapour deposition (CVD) CVD technique, physical vapour deposition (PVD) (PVD) technique, atomic layer-layer molecular beam epitaxy (ALL-MBE) and other solution deposition techniques to produce ELR material.In formation wire, multiple modification ELR film can be clipped together to form wire.
In formation ELR wire, multiple ELR band or paper tinsel can be clipped together to form large-sized wire.Such as, electrode can comprise one or more ELR band or paper tinsel.
Except ELR wire, electrode and other conducting elements can be formed by ELR nano wire.In traditional term, nano wire has tens nanometer scale or less width or diameter, and the nanostructure of usual strainless length.In some cases, ELR material can be formed as the nano wire with 50 nano-widths and/or the degree of depth.In some cases, ELR material can be formed as the nano wire with 40 nano-widths and/or the degree of depth.In some cases, ELR material can be formed as the nano wire with 30 nano-widths and/or the degree of depth.In some cases, ELR material can be formed as the nano wire with 20 nano-widths and/or the degree of depth.In some cases, ELR material can be formed as the nano wire with 10 nano-widths and/or the degree of depth.In some cases, ELR material can be formed as the nano wire with 5 nano-widths and/or the degree of depth.In some cases, ELR material can be formed as having the nano wire being less than 5 nano-widths and/or the degree of depth.
Therefore, the ELR material of modification can be formed as band, paper tinsel, rod, bar, nano wire, film and can move or carry electric current from a point or position to other shapes of another point or position or structure.
In some instances, can determine to be used in the material type in ELR material by the type of the application using ELR material.Such as, some application can use the ELR material with BSCCOELR layer, and some application can use YBCOELR layer.Namely, ELR material described herein can be formed as certain structure (such as, band or nano wire), and formed by specific material (as YBCO or BSCCO) based on the use equipment of this ELR material or the type of assembly, and other factors.
Various manufacturing process can be used when forming the junction device based on ELR described herein.Such as, the ground floor of ELR material can be deposited on substrate (such as Semiconductor substrate), subsequently the material modified second layer be deposited on ground floor.Semiconductor element can be positioned over contiguous ELR material, forms knot.Certainly, skilled person will recognize and can use other techniques.
As discussed in this, much equipment and system can utilize, use and/or comprise the knot based on ELR, such as, comprise for the electric current at high temperature or ambient temperature place, show the transistor of extremely low-resistance assembly.Lower joint describes some example apparatus, system and/or application.It will be understood by those skilled in the art that other equipment, system and/or application also can use this based on the knot of ELR.
Figure 39-D shows the schematic diagram of the transistor 3900 using semiconductor nanowires and one or more ELR element.Transistor 3900 comprises the nano wire 3910, an ELR element 3920 and the 2nd ELR element 3925 that are formed by semi-conducting material.In some cases, ELR element 3920,3925 also can be the element of nano wire or other similar sizes.
At work, supercurrent in an ELR element 3920 (that is, non-resistance flow through electric current) flows to the 2nd ELR element 3925 through nano wire 3910.When electric current flows through semiconductor nanowires 3910, such as, grid by being formed by ELR material, nano wire is applied gate voltage and can control electric current.
Therefore, miniature circuit can use multiple transistor 3900, such as the array of transistor 3900.Such as, superconductive quantum interference equipment (SQUID) can be formed by two such transistors 3900, and superconductive quantum interference equipment can be used as the switching coupling element between quantum bit (quantum bit), or other application.
Figure 40 A-D and 40B-D shows the schematic diagram of the bipolar junction transistor using one or more ELR element.Figure 40 A-D depicts npn bipolar junction transistor 4000.Npn bipolar junction transistor 4000 comprises emitter electrode 4010, collector electrode 4012 and grid 4014, forms some or all in them by ELR material, ELR material such as modification described herein and/or with holes.The npn knot formed by the first n-type semiconductor 4020, p-type semiconductor 4024 and the second n-type semiconductor 4022 is between emitter electrode 4010 and collector electrode 4012.
Figure 40 B-D depicts pnp bipolar junction transistor 4030.Pnp bipolar junction transistor 4030 comprises emitter electrode 4040, collector electrode 4042 and grid 4044, forms some or all in them by ELR material, ELR material such as modification described herein and/or with holes.The npn knot formed by the first n-type semiconductor 4050, p-type semiconductor 4054 and the second n-type semiconductor 4052 is between emitter electrode 4040 and collector electrode 4042.
In some instances, npn bipolar junction transistor 4000 and/or pnp bipolar junction transistor 4030 are as current regulating devices, and it controls to flow through the magnitude of current of knot relative to the amount of the bias voltage being applied to its base terminal, such as current-controlled switch.Because they are three terminal devices, they can affect input signal with three kinds of different modes: (1) when common base configuration in time, voltage gain is provided and current gain is not provided, (2) when in common-emitter configuration, voltage and current gain is provided, and (3) when common collector configuration in time, current gain is provided and does not provide voltage gain.Such as, when being configured in common-emitter configuration, npn bipolar transistor 4000 can be used as amplifier.
Figure 41-D shows the schematic diagram of the field-effect transistor (FET) using one or more ELR element, such as mos field effect transistor (MOSFET).FET4100 comprises the substrate 4110 with N-shaped source region 4112 and N-shaped drain region 4114.FET4100 also comprises source electrode 4120, drain electrode 4122 and grid 4124, forms some or all in them, ELR material such as modification described herein and/or with holes by ELR material.FET4100 also comprises insulating barrier 4126D, is usually formed by oxide, and grid 4124 and substrate 4110 insulate by it.
During operation, positive voltage is applied to grid 4124, it produces electric field in channel region 4128, makes electronics flow to drain region 4114 from source region 4112 in channel region 4128.That is, the electric field produced sets up field effect, and this field effect allows electric current to flow in device, by transistors switch to " conducting " state.
Usual use MOSFET is to amplify and/or to switch electronic signal.They can be configured to NMOS or PMOS device, or combine to form complementary metal oxide semiconductors (CMOS) (CMOS) circuit.The example device that can use the MOSFET based on ELR in such as cmos circuit will be discussed now.
Figure 42-D shows the schematic diagram 4200 of the amplifier using one or more transistor unit based on ELR.Amplifier 4210 comprises the one or more transistors 4220 formed by ELR assembly at least partly, such as bipolar junction transistor, field-effect transistor etc.At work, amplifier 4210 receives input signal 4230, amplifies this signal, and produces the output signal 4240 of amplifying.Permitted eurypalynous equipment and can be adopted amplifier 4210, comprise mobile device, TV, broadcast receiver, other equipment of signal transacting, wireless radio transmission, audio reproduction etc. are provided.
In some instances, use the amplifier of ELR material to show lower power consumption, and perform than using conventional interconnect or the higher speed place of metallized amplifier.Because reduce or eliminate common electricresistance effect, therefore IC layout can be simplified, etc.
Figure 43-D shows the schematic diagram 4300 of the switch using one or more transistor unit based on ELR.Switch 4310 comprises one or more transistor 4315 based on ELR, such as, based on the bipolar junction transistor of ELR, the field-effect transistor etc. based on ELR.In the work as gate, memory and/or information storing device, switch 4310 receives input signal 4320, such as input voltage, and the output signal 4322 of any one produced as " conducting " state or "Off" state, wherein in computational logic, " conducting " state can be relevant to " 1 ", and in computational logic, "Off" state can be relevant to " 0 ".
In work in switched-mode power supply, switch 4310 receives input signal 4320, such as current type, and produces the output signal changing current type.Such as, switch 4310 can regulate this electric current for specific equipment from electrical network received current.
Exemplarily, in a switching regulator, dc voltage (Vin) is converted to the PWM waveform of the pulse width modulation at high frequency treatment.The usual fixed transmission ratio of duty ratio (Vout/Vin) of PWM waveform.Then filtering is carried out by inductor and couple capacitors PWM waveform, to provide desired output voltage (Vout).There is the adjuster of three types: step down voltage redulator (Vin>Vout) is referred to as Buck adjuster, boost pressure controller is referred to as Boost adjuster, and anti-phase adjuster (Vout=-Vin) is referred to as Buck-Boost adjuster.All can benefit from transistor, interconnection, inductor winding, electrode for capacitors and/or other eliminations based on the resistance in the element of ELR.Result is higher efficiency, etc.
This switch 4310 can be used in other application, such as, in analogue-to-digital converters, digital-analog convertor, microprocessor and other logic primitive parts etc.In some cases, the use of ELR element is conducive to raising the efficiency, cause the clock speed faster of conversion times (ADC, DAC) faster and/or calculating/instruction number of times μ θ, μ P, logic, the integrated circuit (IC) design of simplification, and other benefits.
Figure 44-D shows the schematic diagram of the microprocessor 4400 using one or more element based on ELR.This microprocessor 4400 comprises the logic module 4410, accumulator 4417, program counter 4420, address register 4425, controller sequencer 4430, decoder 4435, data register 4440, random access memory (RAM) 4450 and/or I/O (I/O) assembly 4455 that comprise one or more transistor 4415 based on ELR.Microprocessor 4400 also comprises various information path 4460, can be formed they some or all by modification described herein and/or with holes ELR material.Conductive path 4460 can be control bus footpath 4462, data/address bus footpath 4464, address bus footpath 4466 etc.
Formed and there are the logic module 4410 of ELR material described herein and/or some or all information paths 4460 of microprocessor 4400, microprocessor 4400 can be made to perform faster and more effective, and other benefits.
In some instances, because in fact there is no transmission delay in the circuit using ELR interconnection, therefore ELR material-semiconductor junction enables the equipment such as such as switch, amplifier, logical device, memory device perform at very high speed place, and do not need complicated assembly and/or structure, and due to minimum resistance distortion, obtain the high fidelity signals of long distance, and other benefits.
Certainly, those skilled in the art will recognize that, other system and equipment can use the knot based on ELR described herein and transistor.
In some implementations, the transistor comprising modification ELR material can describe as follows:
A kind of junction device, comprising: modification pole low resistance (ELR) element; And be positioned at the semiconductor of contiguous described modification ELR element; Wherein said modification ELR element comprises the modified layer of one or more operating characteristic of ELR material layer and change ELR material layer.
Form a method for knot, described method comprises: on substrate, form modification pole low resistance (ELR) element; And form the semiconductor of the modification ELR element be positioned on contiguous described substrate.
Be formed in the knot on substrate, comprise: the first element be made up of semi-conducting material; And the second element to be formed by pole low resistance (ELR) material, described material shows pole low resistance for the flow of charge at the temperature place between 150K and 313K.
A kind of Josephson's junction device, comprising: the first modification pole low resistance (ELR) element; Second modification pole low resistance (ELR) element; And the semiconductor between described first modification ELR element and described second modification ELR element; Wherein said first modification ELR element or described second modification ELR element comprise the modified layer of one or more operating characteristic of ELR material layer and change ELR material layer.
Form a method for Josephson junction, described method comprises: on substrate, form the first modification pole low resistance (ELR) element; On substrate, contiguous described first modification ELR element forms semiconductor; And contiguous described semiconductor forms the second modification pole low resistance (ELR) element on substrate.
Be formed in the Josephson junction on substrate, comprise: the first element formed by pole low electrical resistant material; Formed by semi-conducting material and be positioned the second element of contiguous described first element; And the third element to be formed by pole low electrical resistant material; Wherein form described first element or described third element by pole low resistance (ELR) material, for the flow of charge at the temperature place between 150K and 313K, described pole low electrical resistant material shows pole low resistance.
A kind of transistor, comprising: the first nano wire formed by modification pole low resistance (ELR) material; The second nano wire formed by modification pole low resistance (ELR) material; And semiconductor nanowires, have and be coupled to described first nano wire to form the first end of the first knot and to be coupled to described second nano wire to form the second end of the second knot; Wherein said modification ELR material comprises the modified layer of one or more operating characteristic of ELR material layer and change ELR material layer.
For controlling an equipment for electric current, described equipment comprises: semiconductor nanowires; First modification pole low resistance (ELR) element, in emission current to described semiconductor nanowires; Second modification pole low resistance (ELR) element, collects the electric current from described semiconductor nanowires; And control element, voltage is applied to described semiconductor nanowires to control the electric current in described semiconductor nanowires.
A kind of transistor, comprising: the first knot formed by first modification pole low resistance (ELR) nano wire in the firstth district being positioned at contiguous semiconductor nanowires; And by second modification pole low resistance (ELR) nano wire in the secondth district being positioned at contiguous semiconductor nanowires formed second knot.
A kind of bipolar junction transistor, comprising: the emitter electrode formed by modification pole low resistance (ELR) material; The collector electrode formed by modification pole low resistance (ELR) material; The base electrode formed by modification pole low resistance (ELR) material; Semiconductor element, has and is coupled to emitter electrode to form the first end of the first knot and to be coupled to collector electrode to form the second end of the second knot; Wherein said modification ELR material comprises the modified layer of one or more operating characteristic of ELR material layer and change ELR material layer.
For controlling a device for electric current, described device comprises: semiconductor element; First modification pole low resistance (ELR) element, emission current is in described semiconductor element; Second modification pole low resistance (ELR) element, collects the electric current from described semiconductor element; And control element, voltage is applied to described semiconductor element to control the electric current in described semiconductor element.
A kind of bipolar junction transistor, comprising: the first knot formed by first modification pole low resistance (ELR) element in the firstth district being positioned at contiguous semiconductor subassembly; And by second modification pole low resistance (ELR) element in the secondth district being positioned at contiguous semiconductor subassembly formed second knot.
A kind of mos field effect transistor (MOSFET), comprising: the source electrode formed by modification pole low resistance (ELR) material; The drain electrode formed by modification pole low resistance (ELR) material; And the gate electrode to be formed by modification pole low resistance (ELR) material; Wherein said modification ELR material comprises the modified layer of one or more operating characteristic of ELR material layer and change ELR material layer.
For controlling a device for electric current, described device comprises: semiconductor region; First modification pole low resistance (ELR) element, provides the source of the electronics entered in semiconductor element; Second modification pole low resistance (ELR) element, receives the electronics from semiconductor element; And control element, voltage is applied to described semiconductor element to control the electron flow in semiconductor element.
A kind of electrode, be configured to be used by mos field effect transistor (MOSFET), described electrode comprises: the modified layer of one or more operating characteristic of pole low resistance (ELR) material layer and change ELR material layer.
A kind of switch, comprising: mos field effect transistor (MOSFET), comprising: the source electrode formed by modification pole low resistance (ELR) material; The drain electrode formed by modification pole low resistance (ELR) material; And the gate electrode to be formed by modification pole low resistance (ELR) material; Wherein said modification ELR material comprises the modified layer of one or more operating characteristic of ELR material layer and change ELR material layer.
A kind of logical device, comprising: semiconductor region; First modification pole low resistance (ELR) element, provides the source of the electronics entered in semiconductor element; Second modification pole low resistance (ELR) element, receives the electronics from semiconductor element; And control element, voltage is applied to described semiconductor element to control the electron flow in semiconductor element; Wherein actual electron flow represents the first logic state corresponding to 1, and does not have electron flow to represent the second logic state corresponding to 0.
A kind of switch, comprising: the emitter being configured to one or more electron emission to enter into semiconductor element; And be configured to collect the collector electrode from one or more electronics of described semiconductor element; Wherein said emitter or collector electrode comprise modification pole low resistance (ELR) material.
A kind of amplifier, comprising: mos field effect transistor (MOSFET), comprising: the source electrode formed by modification pole low resistance (ELR) material; The drain electrode formed by modification pole low resistance (ELR) material; And the gate electrode to be formed by modification pole low resistance (ELR) material; Wherein said modification ELR material comprises the modified layer of one or more operating characteristic of ELR material layer and change ELR material layer.
A kind of amplifier, comprising: the emitter being configured to one or more electron emission to enter into semiconductor element; And be configured to collect the collector electrode from one or more electronics of described semiconductor element; Wherein said emitter or collector electrode comprise modification pole low resistance (ELR) material.
A method for amplifying signal, described method comprises: the electric current receiving emitter place; Based on received electric current, electron emission is entered in semiconductor element; Voltage is applied to obtain voltage or current gain relative to received electric current to launched electric current; And the electric current amplified in collection collector electrode, wherein form collector electrode by modification pole low resistance (ELR) material.
A kind of amplifier, comprising: mos field effect transistor (MOSFET), comprising: the source electrode formed by modification pole low resistance (ELR) material; The drain electrode formed by modification pole low resistance (ELR) material; And the gate electrode to be formed by modification pole low resistance (ELR) material; And cooling system, be configured to the temperature of MOSFET be remained on the specified temp place lower than the ambient temperature of surrounding described MOSFET; Wherein said modification ELR material comprises the modified layer of one or more operating characteristic of ELR material layer and change ELR material layer.
A kind of junction device, comprising: modification pole low resistance (ELR) element; With the semiconductor being positioned at contiguous described modification ELR element; And cooling package, modification ELR element is remained on wherein modification ELR element with the temperature place of pole low resistance transmission charge; Wherein said modification ELR element comprises the modified layer of one or more operating characteristic of ELR material layer and change ELR material layer.
For controlling an equipment for electric current, described equipment comprises: semiconductor region; First modification pole low resistance (ELR) element, provides the source of the electronics entered in semiconductor element; Second modification pole low resistance (ELR) element, receives the electronics from semiconductor element; Control element, is applied to described semiconductor element to control the electron flow in semiconductor element by voltage; And temperature components, an ELR element, the 2nd ELR element or the 3rd ELR element are remained on the temperature place of the ambient temperature lower than device.
A kind of information storing device, comprising: memory block; First modification ELR element, provides the source of the electric charge entered in described memory block; Second modification ELR element, receives the electric charge from described memory block.
A kind of memory devices, comprising: semiconductor region; First modification pole low resistance (ELR) element, provides the source of the electronics entered in semiconductor element; Second modification pole low resistance (ELR) element, receives the electronics from semiconductor element; And control element, voltage is applied to described semiconductor element to control the electron flow in semiconductor element; Wherein actual electron flow represents the first logic state corresponding to 1, and does not have electron flow to represent the second logic state corresponding to 0.
the integrated circuit of the 8th chapter-formed by ELR material
Part A-integrated device electronics
This part of specification relates to Fig. 1-36 and Figure 37-E to Figure 45-E; Therefore all reference markers be included in this part relate to the element found in these accompanying drawings.
Describe the integrated circuit package formed by modification pole low resistance (ELR) material.Modification ELR material can be such as film, band, paper tinsel or nano wire.But although for convenience of explanation, composition supposition example is modification ELR material is film, and other can be used to realize.For the electric current at the temperature place higher than usually relevant to current high-temperature superconductor (HTS) temperature, modification ELR material provides extremely low resistance, improves the operating characteristic at these higher temperature place integrated circuits, and other benefits.
In some instances, based on the ELR film with material type in integrated circuits, modification application, adopt the size of the assembly of the ELR film of this modification, adopt the equipment of ELR film or the job requirement of machine etc. of modification to manufacture the ELR film of modification.Similarly, during the Design and manufacture of integrated circuit, the material of the basic unit of the ELR film being used as modification can be selected based on various consideration and desired work and/or manufacturing characteristics and/or be used as the material of modified layer of ELR film of modification.
Figure 37-E shows the schematic diagram of the cutaway view of the conductive path 3700E formed by modification, with holes and/or that other are new ELR material at least in part, such as, have ELR material base layer 3704 and the ELR material being formed in the modified layer 3706 in described basic unit 3704.Although the various configurations of reference " modification ELR material " and/or modification ELR material (such as, the ELR film etc. of modification) each example of the present invention is described, but will understand, the ELR material of any improvement described herein can be used, comprise, such as according to the modification ELR material (such as, modification ELR material 1060 etc.) of various aspects of the present invention, ELR material with holes and/or other new ELR materials.As the described herein, except other aspects, these ELR materials improved have the operating characteristic that at least one is improved, and in some instances, comprise in the ELR state be operated in higher than the temperature place of 150K.
Various suitable modification ELR film is described in detail at this.When realizing in integrated circuits, such conductive path can be used, such as, for distributing between electric power and each circuit unit of signal transmission in any other semiconductor integrated circuit of microprocessor, microcomputer, microcontroller, digital signal processor (DSP), SOC (system on a chip) (SoC), disk drive controller, memory, application-specific integrated circuit (ASIC) (ASIC), Application Specific Standard Product (ASSP), field programmable gate array (FPGA) or reality.
As shown in the example of Figure 37-E, the modified layer 3706 that described conductive path comprises ELR material base layer 3704 and is formed in described basic unit 3704.This conductive path can be formed on substrate 3702, such as, and the silicon substrate in integrated circuit.Conductive path also can be formed on the top of other IC layers.For higher than those the temperature be used in traditional HTS material, such as, current flowing in the conductive path at room temperature or ambient temperature (about 21 DEG C) place, the conductive path 3700 formed by the ELR film of modification provides very little resistance or does not provide resistance.
Material or the size of substrate 3702 can be selected based on various factors.Such as, select the backing material with high dielectric constant usually will to reduce the electric capacity stood by transmission line, and therefore reduce the power needing drive singal.It will be understood by those skilled in the art that to obtain performance desired by some and/or operating characteristic, substrate can be formed by multiple different materials and substrate can be formed as multiple difformity.
In some instances, for the flowing of the electric current at the temperature place between the transition temperature (such as can in about 80 scopes to about 135K) and room temperature (about 294K) of traditional HTS material, the ELR conductive path of modification provides pole low resistance.In these examples, conductive path can comprise cooling system (not shown), such as refrigeration machine (cryocooler) or cryostat, for the critical temperature of the type of the modification ELR film that is cooled to conductive path 3700 to use conductive path 3700.Such as, cooling system can be conductive path can be cooled to the temperature being similar to liquid fluorine Leon, the temperature being similar to chilled water or the system in these other temperature discussed.That is, type and the structure of the ELR film of the modification that can use based on conductive path 3700 select cooling system.
Figure 38-E is the schematic diagram of the example model representing the conductive path formed by the ELR film of modification.This model comprises input I and exports O.R iand R ocorrespond respectively to the resistance of the connecting material on the input and output side of the conductive path formed by the ELR film of modification.R v1, R v2, R v3and R v4correspond to the outer field through hole from internal conductive paths to conductive path and/or other resistance connected.R w1and R w2corresponding to the resistance of the internal conductive paths of the ELR film of modification.R s1-R s4and C s1-C s5corresponding to the outer field transmission line model of conductive path.The element surrounded by dotted line 3802 can copy continuously in the P place, position of each through hole (or other connect) on conductive path.The example model of Figure 38-E shows and is connected to through hole (by R v4represent) and export O ithe branch B of terminal tandem paths 1.In some instances, this model can comprise the more multicomponent comprising inductor.
Because the pole low resistance of conductive path formed by the ELR film of modification is (by the R of model w1and R w2represent), the signal that conductive path transmits has wavefront constant time of delay close to 0.To be similar to the mode of waveguide, Signal transmissions is by the crystal structure of the ELR film of modification, and the electric capacity not by external environment condition hinders.But signal also transmits on the outer surface of the ELR film of modification, its normal resistance standing surrounding environment is (by the R of model s1-R s4represent) and electric capacity (by the C of model s1-C s5represent).Therefore, before outer surface reaches its voltage changed completely, the signal being conveyed through the crystal structure of the ELR film of modification can arrive terminal note and change the voltage of this node.
As discussed in this, many integrated circuit (IC)-components and system can utilize, use and/or comprise the ELR conductive path of modification, show pole low resistance at high temperature or this conductive path of ambient temperature place.Usually, for electronic current provides the equipment in path or system can comprise modification ELR conductive path as described herein.Part below describes the equipment of some examples, system and/or application.It will be understood by those skilled in the art that other equipment, system and/or application also can use the ELR conductive path of modification.
In some instances, static discharge (ESD) the protection wiring of integrated circuit can use the ELR conductive path of modification as described herein.Figure 39-E is the schematic diagram of the example integrated circuit comprising the esd protection wiring formed by the ELR conductive path of modification.As shown in Figure 39-E, use modification ELR material to realize this conductive path 3902, this conductive path sets up the connection between normal signal path 3904 (it is connected to the i/o pads 3914 of integrated circuit) and esd protection circuit 3906.Conductive path 3908 can also use modification ELR material, and this conductive path is connected between this esd protection circuit 3906 and ground wire 3910.In some instances; because the ELR conductive path of modification can be directed; namely; current flowing is along the specific plane of modification ELR material; so the layer that the esd protection network of Figure 39-E can use two of being coupled by the through hole of such as through hole 3912 substantially orthogonal, so that ESD is communicated to ground wire.In other examples, also can form normal signal path 3904 by modification ELR material.
Have and become compared with the modern integrated circuits technology of small-feature-size the injury being more and more subject to ESD, and manufacturer has to develop the technology tackling esd protection.In the conventional technology two problems is existed for mitigation esd event.First is quick detection esd event, and second is can make before voltage is elevated to the voltage of damaging thresholding at electric charge, and within the limited time, conduct charges is by various path circuit.Because the less transistor of modern integrated circuits has lower puncture voltage, traditional material is therefore used to be difficult to reach suitable protection class.
Implement the enough protection class of esd protection network permission for esd protection of modification ELR material.First, because use modification ELR material realizes the conductive path 3902 between normal signal path and esd protection circuit, therefore ESD signal has wavefront constant time of delay close to 0.This allows esd protection circuit 3906 almost instantaneous detection esd event.Except can cause at electric charge voltage be increased to damage circuit structure grade before; for esd event provides electric current to conduct; introduced by ESD outside the path (such as conducting path 3908) suitably designed, modification ELR material esd protection network can provide the response be exceedingly fast for induction esd event and trigger protection.Esd protection electric pressure is proportional to esd protection circuit and how reacts to esd event soon.Such as; the esd protection circuit of traditional material is used usually to have manikin (HBM) grade of 2,000V, and because response speed improves octuple or more; the esd protection circuit of the conductive path formed by modification ELR material is used easily may just to reach 16,000VHBM grade.
The esd protection network coming from the ELR conductive path of modification can realize such as: on microprocessor, microcomputer, microcontroller, DSP, SoC, disk drive controller, memory, ASIC, ASSP, FPGA, neural net, sensor array, MEMS and any other general semiconductor integrated circuit.
In some instances, the resistance of the ELR conductive path of modification can be changed to create resistor in restriction position.Resistor can be used as the assembly in the circuit of integrated circuit.Such as, resistor can be used in analog integrated circuit, such as filter and discharger.Can by increasing to clock network the sequential that resistance changes digital circuit.Signal integrity in key area can be improved by inserting extra resistance in the conductive path carrying signal.
Figure 40-E is the schematic diagram of the Laser programmable element of example on the conductive path formed by modification ELR material.The modification ELR conductive path 4002 of Figure 40-E comprises laser modified part 4006.Integrated circuit (IC) chip has passivation layer on the chip surface usually.In some instances, remove this passivation layer to produce opening 4004, so that the ELR conductive path of modification is exposed to laser.When laser modified part 4006 is exposed to laser, relative to perimeter conductive path, the resistance value of this part increases.In some instances, the energy from laser rearranges the molecular structure of the conductive path at laser modified part place, makes the crystal structure of modification ELR material not be re-used as waveguide.In other examples, by the modified layer of laser ablation modification ELR material, and lose the resistance of the reduction that modified layer contributes to.In other examples, change the molecular structure of conductive path by the modified layer of laser ablation modification ELR material.
The size of laser modified part limits this and is partially provided in resistance in modification ELR conductive path.After manufacture circuit, the laser modified part of modification ELR conductive path can provide the resistor be inserted in circuit, and can be valuable especially for analog circuit and " adjustment " oscillator (" tweaking " oscillator) for changing the clock frequency on chip.In some instances, the LINEAR CONTINUOUS length of modification ELR conductive path can be changed, to provide desired resistance.In other examples, multiple discrete portions of modification ELR conductive path can by laser modified to provide overall series resistance.
Such as, Figure 41-E is the schematic diagram of the multidigit Laser programmable element of example on the conductive path formed by modification ELR material.Figure 41-E depicts the modification ELR conductive path 4102-4108 with each resistance be made up of multiple discrete laser modified part.As mentioned above, in some instances, provide opening 4410 so that conductive path is exposed to laser in the passivation layer.With reference to figure 40-E, conductive path 4102 comprises discrete component resistance 4112 as discussed above.Conductive path 4104 comprises the discrete laser modified part 4114 and 4116 of two of being superimposed, to be provided for the all-in resistance of conductive path 4104.For those skilled in the art, can the various configuration of combination laser modifying moieties and size should be apparent with the resistance be provided for desired by conductive path.As understood, other programming mechanisms of such as ion beam and electron beam can be suitable for modification ELR conductive path of programming in some applications.
In some instances, can by the resistance that there is Iterim Change modification ELR conductive path in magnetic field.The ELR state of modification ELR material can not be present in the magnetic field being greater than critical value to be existed, even if temperature is low to moderate absolute zero.The critical temperature of this critical magnetic field and modification ELR material is closely related.In some instances, modification ELR material demonstrates two critical magnetic field values, and one is when mixing ELR and starting and under normal condition, and another is when ELR stops.The characteristic of mixing ELR state can be used in the change realizing resistance value by changing magnetic field.
Figure 42-E shows the schematic diagram of the cutaway view of the example integrated circuit of the magnetic programmable element had on the conductive path formed by modification ELR material.Described integrated circuit comprises: Semiconductor substrate 4201; Dielectric substance 4202; Interconnect levels 4203,4205,4207,4210,4212,4214,4216 and 4218; Via layer 4204,4206,4208,4211,4213,4215 and 4217; And limit the space 4219 of magnetic programmable element 4220.In some instances, interconnect levels forms at least interconnect levels 4212 by modification ELR material.
When the example integrated circuit of Figure 42-E is exposed to the magnetic field stronger than critical magnetic field, the resistance of interconnect levels 4212 increases.Interconnect levels 4209 in interconnect levels 4212 is used as the shielding to magnetic field, makes the space 4219 in screen 4209 limit magnetic programmable element 4220.In some instances, multiple space can limit multiple magnetic programmable element.In one example, each of described multiple magnetic programmable element can be exposed to the magnetic field of varying strength, to produce various different resistance.
Magnetic programmable element in integrated circuit can have a lot of purposes.Such as, this element can be used in analog integrated circuit as the resistor that dynamically can add, remove and/or adjust.Can by magnetic programmable element is exposed to magnetic field by add, remove and/or adjusting resistance to regulate the sequential of digital circuit.Extra resistance can be inserted by the conductive path carrying signal is exposed to magnetic field and improve signal integrity in key area.Be similar to the mode of electro-hot regulator for measuring tempeature, the matrix of magnetic programmable element or magnetic programmable element can be used in measuring magnetic field.
Magnetic field can be provided by the equipment be arranged near magnetic programmable element.Such as, this equipment can be permanent magnet or electromagnet.Figure 43-E is the schematic diagram of the magnetic programmable element of example by magnetoresistive RAM (MRAM) unit activating.In the example of Figure 43-E, the conductive path 4302 of modification ELR material is formed near mram cell 4304.And be mram cell by the Source Description in the magnetic field 4308 in the example of Figure 43-E and Figure 44-E below, any magnetic field sources of the such as ELR transducer/antenna described in appendix can be used in producing magnetic field.
This mram cell has at least two states and depend on this state, and the magnetic field produced by mram cell can change.Mram cell is sufficiently close to conductive path 4302, and wherein for the conductive path of at least one state of mram cell, the magnetic field produced by mram cell is on critical magnetic field.In some instances, the width of the described conductive path near mram cell is reduced, the width segments 4306 such as reduced.The reduction of this width can affect the required required critical magnetic field of the resistance changing the width segments reduced.
In some instances, can along conductive path distribution or the more than one mram cell that localizes to realize multiple resistors of resistance of change.Figure 44-E is the schematic diagram of example of the multiple mram cells along the distribution of modification ELR conductive path.As shown in Figure 44-E, each conductive path 4402-4408 has multiple mram cell, and it can produce the magnetic field of the section for conductive path.Optionally can activate the resistance-variable that each mram cell makes conductive path thus.Such as, mram cell 4410 is in the first state, and it produces the magnetic field of the critical magnetic field of the section 4412 exceeded for modification ELR conductive path 4402.Mram cell 4411 is in the second state, and it does not produce the magnetic field of the critical magnetic field of the section 4413 exceeded for modification ELR conductive path 4402.
Multiple sections of modification ELR conductive path can be exposed to the magnetic field creating multiple resistance value.Such as mram cell 4414 and 4416 can both be in the first state and produce the critical magnetic field for the section 4418 and 4420 on modification ELR conductive path 4404.The section of any amount of different length can be combined to create the almost infinitely possible resistance produced on conductive path.This layout of multiple mram cell or other magnetic field sources can be used, such as, to create adaptive filter in filter, wherein can change the resistance of this filter.For the object of coupling, this layout can also be used for the impedance regulating transmission line.
In some instances, by changing the size of section, the section of modification ELR conductive path can be used as current limiting device, makes the electric current flowing through conductive path be elevated on the critical current at the section place of modification.Such as, Figure 45 E is the schematic diagram of the modification ELR conductive path 4502 with current limit section 4504.Although the example of Figure 45-E comprises the section of the reduction width of modification ELR material, it will be understood by those skilled in the art that other sizes that can change modification ELR material.Such as, can the section of modification ELR material be done thinner or multilayer modification ELR material can have less layer.
In some instances, multiple element can be created on modification ELR conductive path.By designing specific width and thickness according to the needs of each particular element, specific critical current can be reached in each particular case.When electric current is lower than critical current, with insignificant resistance, each particular element is operated in normal service condition, but when the specific critical current of the electric current section of exceeding, in order to meet some layout strategies (such as alleviate fault or for the condition desired by other), this section becomes to be had needed for larger resistive than the remainder of conductive path.As mentioned above, can by the resistance of the thickness of section, width and/or the length section of restriction.
In some instances, when reaching critical current in the particular segment at conductive path, transistor or microelectromechanical systems (MEMS) switch can be used to trigger.Such as, in response to some condition, mems switch can be set to send electric current by current limit section, but otherwise sending electric current passes through alternative route.
In some instances, some or all of system described herein and equipment can use the cooling system of low cost in the application, and wherein at the temperature place lower than ambient temperature, the specific modification ELR material list that this application uses reveals pole low resistance.As discussed in this, in these examples, this application can comprise cooling system (not shown), such as, modification ELR conductive path is cooled to the temperature of the boiling point being similar to liquid fluorine Leon, is similar to the temperature of the fusing point of water or the system in these other temperature discussed.The type of the ELR material that can use based on this application and structure choice cooling system.
Except system described herein, equipment and/or application, those skilled in the art will recognize that, other integrated circuit (IC) system, equipment and application can use ELR conductive path described herein.
Part B-integrated circuit and MEMS
This part of specification relates to Fig. 1-36 and Figure 37-F to Figure 45-F; Therefore all reference markers be included in this part relate to the element found in these accompanying drawings.
Various realization of the present invention is usually directed to extremely low-resistance interconnection (ELRI), the interconnection of ELR material that such as comprise modification, that with holes and/or other are new.In some implementations, ELRI can have the ground floor that is made up of pole low resistance (ELR) material and by the material modified second layer formed being bonded to ground floor ELR material.This ELRI can be used in various system and method to produce various improvement.Some examples producing various efficiency include but not limited to, use the system and method being used for ELRI microelectromechanical systems (MEMS) being connected to the analog circuit on semiconductor integrated circuit (IC), use the system and method for the ELRI linked together by multiple MEMS on IC or IC mounting substrates, use the system and method for the ELRI for the passive block used together with the MEMS on semiconducter IC or mounting substrates, and use the system and method being used for ELRI MEMS being connected to other circuit in IC mounting substrates or system in package (SiP).
Some realize providing and use the system and method for ELRI MEMS to be connected to the analog circuit on semiconducter IC.Various realization uses ELRI material to realize being used for the conductive path of signal transmission between analog circuit function and MEMS element.These conductive paths can have insignificant resistance, and have wavefront constant time of delay close to 0.Like this, the delay of the mutual middle signal of electricity and drive current can significantly be reduced.
According to various realization, ELRI material also can be used in the multiple MEMS on IC, on IC mounting substrates or in other IC encapsulation to link together.Such as, ELRI material can be used in the conductive path realizing signal transmission between each MEMS circuit on IC.These conductive paths connecting each MEMS can combine or compensate the different MEMS parameters or attribute that create MEMS network or virtual many-MEMS, in some sense, when having multiple and parameter that is that may change or attribute, they work electrically is a MEMS.
In one or more implementations, ELRI can be used on semiconducter IC or on mounting substrates MEMS on passive block in.Such as, in some implementations, ELRI material can be used in realizing passive block and/or the conductive path between passive block and other circuit.Conductive path allow with insignificant resistance and close to zero wavefront constant time of delay signal transmission.The use of ELRI material significantly reduces their the mutual middle signal of electricity and the delay of drive current.In addition, these ELRI passive blocks can comprise MEMS element with when being connected with, and comprise the ELRI of the part as MEMS structure.
In addition, various realization of the present invention provides the system and method for the ELRI made for MEMS being connected to other circuit in IC mounting substrates or system in package (SiP).These realize some in, ELRI material can be used in realizing conductive path, this conductive path be used between MEMS element and circuit function assembly signal transmission, this can have multiple beneficial effect.Such as, conductive path can have insignificant resistance and wavefront constant time of delay close to zero, reduce significantly thus their electricity mutual in signal and the delay of drive current.
Can based on the application of the type of material, ELRI, the size using the assembly of ELRI, ELRI such as manufacture such as the use equipment of ELRI or the job requirement of machine etc.Like this, during Design and manufacture, the material of the basic unit being used as ELRI can be selected based on various consideration and desired work and/or manufacturing characteristics and/or be used as the material of modified layer of ELRI.Although illustrate and describe for the layout of modification ELR and/or the various suitable geometry of layout and configuration at this, other geometries many are also possible.Except material thickness, different layers use, have multiple adjacent modified layer ELR film, by the difference in multiple ELR film of single modified layer modification and other three-dimensional structures, these other geometry comprises relative to the different pattern of length and/or width, configuration or layout.Therefore depend on desired application and/or characteristic, any suitable modification ELR can be used.
In the accompanying drawings, the size of each element described or assembly and the lateral dimension of each layer and thickness do not need to draw in proportion, and at random can zoom in or out these different elements, to improve legibility.In addition, when such details is unnecessary for detailed description of the present invention, abstract component detail is to get rid of details in the accompanying drawings, and such as, between the accurate geometry of assembly or location and such assembly some accurately connects.When such details is for when to understand this present invention be unnecessary, shown representative geometry shape, interconnection and configuration are intended to be only schematic universal design or operation principle, instead of exhaustive.
The schematic diagram of the possible circuit design that MEMS3710a-3710d is connected with analog circuit 3720a-3720d by the conventional interconnect that Figure 37-F shows use such as 3730.In many circuit design, analog circuit 3720a-3720d is connected with various MEMS and measures the parameter of various MEMS.But, by the connection dead resistance of restricting signal precision, reduce any measurement.As shown in Figure 37-F, need multiple analog circuit 3720a-3720d to amplify the signal that produced by MEMS machinery-electric energy conversion, and compensate the parasitic drain run into by providing signal to the resistive conductor 3760 of the assembly 3740 in conventional art by Signal transmissions.Usually, when analog circuit be placed on be in close proximity to MEMS time, provide functional preferably.But in some cases, due to other Design and manufacture reasons, MEMS3710a-3710d can not be positioned near analog circuit 3720a-3720d.Therefore, the performance coming from the degeneration of the connection parasitism caused by conventional conductive path occurs, and in order to enough performances, needs extra design to consider.Similarly, when MEMS being connected to other circuit and/or other assemblies, similar degeneration can be there is when using conventional conductive interconnection.
Realizations more of the present invention provide and use the system and method for ELRI MEMS to be connected to the analog circuit on IC.Such as, ELRI can be used in the conductive path realizing signal transmission between analog circuit function and MEMS element.These conductive paths can have insignificant resistance, and can have wavefront constant time of delay close to zero.Similarly, the delay of the mutual middle signal of electricity and drive current can significantly be reduced.In addition, by being connected to the dead resistance of the reduction of MEMS circuit, performance and precision are tending towards the use being better than conventional conductive path.Therefore, ELRI is used assembly can be allowed to be connected to MEMS circuit MEMS to be connected to assembly (such as analog circuit and/or other circuit) and almost to have nothing to do with their position.
Figure 38-F shows and uses ELRI MEMS to be connected to the schematic diagram of the one or more analog circuits on IC.According to various realization, the ELRI of such as 3830, for each of MEMS circuit 3810a-3810d being connected to the analog circuit 3820 of analog circuit block 3840, can realize this ELRI on almost any semiconducter IC with MEMS structure and analog circuit.Analog circuit can be connected with MEMS and measure MEMS parameter.But owing to connecting ghost effect, any measurement with conventional interconnect reduces and limits precision.As understood, use ELRI3830 can allow analog circuit 3820 be connected to MEMS circuit 3810a-3810d and almost have nothing to do with their position and there is no substantial or significant dead resistance, and the complexity of required circuit design can be reduced further.By another ELRI3860, the output of each analog circuit 3820 may be coupled to drive wire 3850.
In realizations more of the present invention, provide a kind of IC, it is comprised by one or more conductive path footpath, MEMS and circuit (such as analog circuit) group being connected to MEMS by one or more conductive path.In some implementations, form one or more conductive path by ELRI, this ELRI have the ground floor that is made up of ELR material (such as YBCO, BSCCO or other) and by be bonded to ground floor ELR material material modified (such as chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium, beryllium, gallium, selenium, silver or other) second layer that forms.In some implementations, IC can have multiple interconnect levels, is separated each level by the adjacent layer level of the insulation dielectric with through hole, and when needs continuous conduction path, through hole is formed as electric coupling adjacent interconnection level.Layer and multiple interconnect levels each can comprise at least one of one or more conductive path.Realize according to some, under the condition desired by being applicable in ambient temperature or at other, ELRI can be superconductor or perfact conductor.
Described MEMS can comprise one or more assembly.Example includes but not limited to, radio circuit, tunable transmission line, waveguide, resonator, ELR assembly, passive block, ELR passive block, quasi-optics assembly, tunable inductor, tunable capacitor and/or electromechanical filter.As other examples, described one or more assembly can comprise transducer, with acquisition environment parameter.The example of the type of the transducer that can use includes but not limited to, pressure sensor, temperature sensor, optical sensor, vibrating sensor, accelerometer, humidity sensor, electric-field sensor and/or sound transducer.
Some realize provide comprise connect IC power supply electronic equipment (such as, wireless device, Wi-Fi equipment, spread-spectrum equipment, wireless USB apparatus, equipment etc.).This IC can have the one or more conductive paths be made up of ELRI, and wherein this ELRI has the ground floor that comprises ELR material and by the material modified second layer formed being bonded to ground floor ELR material.In addition, by one or more conductive path, circuit (such as RF circuit, analog circuit, digital circuit etc.) group can be connected to MEMS.In some implementations, the IC in electronic equipment can also comprise RF antenna, RF amplifier, RF filter and/or RF controller.In some cases, these assemblies can be the ELR assemblies obtained by ELR material.Such as, RF antenna can have the ELR antenna stack be made up of ELR material and the 2nd material modified ELR antenna stack comprising the ELR material being bonded to an ELR antenna stack.
Figure 39-F shows and uses ELRI3910 MEMS3920 to be connected to other circuit on IC mounting substrates or SiP3940 or assembly 3930.Such as, ELRI3910 can be used in MEMS3920 being connected to microprocessor, microcomputer, microcontroller, DSP, SOC (system on a chip) (SoC), antenna, the 2nd MEMS, ASIC, ASSP, FPGA and/or other circuit, assembly or equipment 3930.The technology be used in these realizations can be used in MEMS3920 being connected to other circuit or assembly 3930.In addition, these technology can be realized on the almost any semiconducter IC mounting substrates of MEMS3920 comprising identical or different type.Such as, for SiP, ELRI3910 can be used in connecting MEMS on substrate with configuration to the connection of other passive blocks of IC and such as antenna, and do not have appreciable resistance to allow these elements to perform, no matter and their physical locations on substrate, just look like them are the respective Nodes being connected directly between them.
In at least one realizes, a kind of IC is provided, comprises MEMS, network or assembly and IC mounting substrates.IC mounting substrates can have the one or more conductive paths be made up of ELRI, and ELRI has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.By one or more conductive path, the network of assembly can be connected to MEMS.In some implementations, the network of assembly comprises one or more programmable ELRI passive block, microprocessor, microcomputer, microcontroller, DSP, SOC (system on a chip) (SoC), antenna, the 2nd MEMS, ASIC, ASSP and/or FPGA.In one implementation, this group ELRI passive block is programmable with the characteristic frequency setting radiating circuit or receiving circuit or Q.
In some implementations, MEMS can comprise one or more inner track and/or assembly, by comprising the ground floor of ELR material and comprising the material modified second layer being bonded to ground floor ELR material and form this inner track and/or assembly.Described one or more assembly can be electric component and/or mechanical component.Such as, in at least one realizes, one or more assembly can comprise one group of ELRI passive block, tunable transmission line, waveguide, resonator, quasi-optics assembly, tunable inductor, tunable capacitor, electromechanical filter, transducer, switch, actuator, structure and/or other assemblies.
In some implementations, MEMS can also comprise, input port, receives the input signal from MEMS outside; And/or output port, to the signal that MEMS external emission inside produces.Input port can be connected to and be configured to receive input signal and the assembly producing response.In some cases, by one or more conductive path, input port and/or output port can be connected to this assembly to allow Signal transmissions.In some implementations, described one or more conductive path comprises the ground floor that is made up of pole low resistance (ELR) material and comprises the material modified second layer being bonded to ground floor ELR material.
Various realization also provides the electronic equipment with the power supply being connected to IC.Realize according to these, IC can comprise the IC mounting substrates with the one or more conductive paths be made up of ELRI, and wherein ELRI has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.In addition, IC can be had MEMS and is connected to the network of other assemblies (such as microprocessor, microcomputer, microcontroller, DSP, SoC, antenna, RF controller, RF circuit, RF amplifier, the 2nd MEMS, ASIC, ASSP, FPGA, neural net and/or other assemblies) of MEMS by one or more conductive path.In some implementations, MEMS can comprise one or more following assemblies: tunable transmission line, waveguide, resonator, quasi-optics assembly, tunable inductor, tunable capacitor and/or electromechanical filter.
Owing to using ELRI can cause many advantages, wherein ELRI is for being connected to analog circuit on IC or SiP and/or other circuit/assemblies by MEMS circuit.Such as, because one or more conductive path can have the dead resistance close to zero, this does not rely on the position in encapsulation by allowing MEMS to be connected to this group circuit or assembly.In addition, the degeneration that MEMS and circuit or assembly can be caused by dead resistance with the position optimized and minimizing is integrated on IC by ELRI.As another example, ELRI will allow to design MEMS and analog circuit slightly independently.This independently design may be beneficial to fast development.In addition, this will allow more freely to use MEMSIP and analog circuit IP.Along with ELRI allows more independence between MEMS and Analog Circuit Design, more value volume and range of product may be integrated on IC, thus in new product MEMSIC will increase sharply-this growth is provided for improving the learning curve (learningcurve) of product design and manufacture.
Be conducive to using other ELRI technology in IC product, with using this ELRI technology synergy.Example comprises MEMSELRI technology, such as connect multiple MEMS circuit ELRI, for MEMS is connected to the ELRI of other circuit on mounting substrates or SiP, the ELRI (IC to be connected to the mounting substrates in encapsulation by it) of the 3D interconnection on IC, the ELRI of the power distribution on mounting substrates and other, all these further increase the development of all ELRI technology and can improve the performance of product.
By the metal interconnected resistance for connecting MEMS circuit that conventional art is set up, can limit and/or reduce their parameter or attribute.As shown in Figure 40-F, in each output of MEMS4020a-4020f, some traditional designs have used amplifier 4010a-4010f to increase signal strength signal intensity.Then (such as by analog interface 4030) output from amplifier 4010a-4010f is connected to combine and/or to operate in the output of MEMS circuit.But, owing to using the ELRI according to various realization of the present invention, MEMS and interface can be connected in the mode of the ghost effect ignoring interconnection.
Figure 41-F shows the schematic diagram of the multiple MEMS4110a-4110f being connected to interface equipment 4120.According to various realization, ELRI material can be used in being connected by multiple MEMS4110a-4110f on IC, SiP or IC mounting substrates 4130.Such as, ELRI material can be used in the conductive path 4140 realizing signal transmission between each MEMS circuit 4110a-4110f on IC.These conducting paths connecting each MEMS4110a-4110f can combine or compensate the different MEMS parameters or attribute that create MEMS network or virtual many-MEMS, in some sense, when having multiple and parameter that is that may change or attribute, they work electrically is a MEMS.According to various realization of the present invention, the ELRI for MEMS being connected to other MEMS can be realized on almost any semiconducter IC of MEMS with identical or different type.In some cases, ELRI can not reduce the output of MEMS.
The example of virtual many-MEMS be by mems switch be connected to other MEMS capacitor as " finishing " (" trim ") to adjust the MEMS capacitor of enough and to spare.For the identical environmental force mainly run into, or this " finishing " assembly may may can not be suppressed.Another example is multiple MEMS of the multiple environmental parameter of sensing.Example includes, but not limited to hydraulic pressure in container, air pressure, the temperature of container, temperature, surround lighting and vibration.Then the environmental parameter of sensing can be connected in integrating control.
In some implementations, provide a kind of IC, it comprises one or more MEMS network, circuit group and one or more conductive path.Described one or more conductive path can comprise ELRI, and this ELRI has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.In some implementations, IC can have multiple layer, and wherein each layer has at least one conductive path.MEMS network interconnection can be made by one or more conductive path.In addition, by one or more conductive path, circuit (such as digital circuit and/or analog circuit) group can be coupled (directly or indirectly) to MEMS network.In some implementations, one or more conductive path can have the dead resistance close to zero, allows a MEMS to be connected to circuit group, and by the designing requirement that the conductive characteristic of prior art interconnection material affects before not relying on.
In at least one realizes, MEMS network is comprised the MEMS with output port and has the 2nd MEMS being connected to the input port of the output port of a MEMS by one or more conductive path.In some cases, extra MEMS (such as the 3rd MEMS, the 4th MEMS etc.) can also be realized on single IC.As shown in Figure 42-F, multiple peripheries of MEMS can be used to arrange.Such as, MEMS4210 can be configured to gaging pressure, and MEMS4220 can be configured to measuring tempeature, and MEMS4230 can be configured to measure light, and MEMS4240 can be configured to measuring vibrations.In some implementations, a MEMS of such as MEMS4250 can comprise radio circuit, transducer (such as, pressure sensor, temperature sensor, optical sensor, vibrating sensor, accelerometer, humidity sensor, electric-field sensor, magnetic field sensor, sound transducer etc.), actuator (such as switch) and/or machinery or electrical structure (such as, tunable transmission line, waveguide, resonator, quasi-optics assembly, tunable inductor, tunable capacitor, electromechanical filter etc.).
In some implementations, electronic equipment (such as, wireless device) can be provided.Electronic equipment can comprise the power supply being connected to IC.This IC can have the one or more conductive paths be made up of ELRI, and this ELRI has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.In various implementations, this IC is also comprised one or more MEMS network and is coupled to circuit (such as analog circuit) group of MEMS network by one or more conductive path.This IC and/or MEMS can comprise various extra assembly, and some of them can be obtained by ELR material.Example includes, but not limited to RF circuit, RF antenna, tunable transmission line, waveguide, resonator, quasi-optics assembly, tunable inductor, tunable capacitor, electromechanical filter, transducer, actuator and or other electric or mechanical structures.
Figure 43-F shows the IC assembly 4300 using ELRI4310, and wherein ELRI4310 is for connecting multiple MEMS circuit 4320 to create virtual many-MEMS.The network of the MEMS4320 created by these interconnection can be designed.Such as, some MEMS4320 can be switches, and some MEMS4320 can be the transducers being exposed to varying environment constraint.Due to insignificant ghost effect, a MEMS is connected to another by ELRI4310, and integrated many-MEMS will work as having the multiple and parameter of change or a MEMS of attribute.
As shown in Figure 43-F, some realize allowing to realize MEMS4320 on ASIC4330 or other assemblies.In the realization shown in Figure 43-F, ASIC4330 has regular pad 4340 and extends pad 4350.In addition, IC assembly 4300 and/or ASIC4330 can use ELRI3D to interconnect 4360 with some assemblies that interconnect.
Can design on IC virtual many-MEMS provides larger ability, it opens huge opportunity with sensitive context and makes electrical reaction.Use in IC product and be also conducive to synergistically using other ELRI technology according to the ELRI of various realization of the present invention, such as but not limited to, for MEMS circuit being connected to the ELRI of the analog circuit on IC, the ELRI for the ELRI of 3D interconnection and/or the power distribution on mounting substrates.
In one or more implementations, in the passive block during ELRI can be used on semiconducter IC or on mounting substrates MEMS.Such as, in some implementations, ELRI material can be used in realizing passive block and/or the conductive path between passive block and other circuit/assemblies.Conductive path allows to carry out signal transmission with insignificant resistance with close to wavefront constant time of delay of zero.Therefore, use this ELRI material be significantly reduced in their electricity mutual in signal and the delay of drive current.In addition, these ELRI passive blocks can comprise MEMS element with when being connected with, and comprise the ELRI of the part as MEMS structure.
Various realization produces the advantage being better than legacy system, and makes some MEMS manufacturing process very actual in some cases, otherwise can not produce assembly in spendable limit.Such as, when assembly does not show the dead resistance of prior art, pole low resistance can make first source component be integrated into " dummy node ".As another example, especially when MEMS uses, ELRI passive component can produce close to desirable assembly, otherwise for IC on or the integrated of other traditional circuits on MEMS substrate (such as inductor or transformer) be disabled.Further, capacitor and inductor can be connected with the characteristic frequency of programme reflector and acceptor circuit and/or Q.Any one of analog or digital MEMS element can be used.In one implementation, when needing to obtain the circuit attribute may I ask, depositing bank bit and each capacitor of strategy value can be made to programme each capacitance.In a further implementation, the capacitor of preset value is optionally connected to obtain desired circuit attribute.
According to various realization, ELRI wiring mems switch can be connected to the passive block be formed in ELRI material, it has insignificant dead resistance, produce for be integrated on IC with other traditional circuits or on MEMS substrate close to desirable assembly.MEMSELRI passive block can connect with by design environment power on MEMS may affect produce response and repair electric capacity or inductance (characteristic frequency of such as programme reflector and/or acceptor circuit and/or Q).In some cases, ELRI passive block inductor may be formed as transformer using perform isolate as signal.
Figure 44-F shows IC4400, and it has MEMS4410 (may have ELRI passive block), realizes one group of passive block 4420 on the mounting substrates of IC or assembly, and one or more conductive path 4430.According to shown realization, described one or more conductive path 4430 comprises ELR, and this ELR has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.By one or more conductive path 4430, this group passive block 4420 can be connected to MEMS4410.In one or more implementations, ELR antenna 4440 and spiral ELR inductor 4450 can be realized on IC.
In some implementations, second group of ELRI passive block can be realized on IC or on MEMS.This group ELRI passive block can be programmable.Such as, this assembly can be programmed to arrange characteristic frequency or the Q of transmitter circuit or acceptor circuit.As another example, register can be used in storing multiple position and uses MEMS to select various capacitor, to obtain characteristic frequency.In some cases, passive block can comprise the switch and/or transducer that are obtained by ELRI material.
Some realize using cooling system with one or more MEMS and/or the ELRI assembly of dynamic programming.Such as, resistive ELRI assembly can be used in the MEMS that programmes.When cooling system reduces temperature, the resistance value in ELRI element reduces, thus effectively turns off this element.Similarly, when temperature is elevated to the critical temperature of ELRI section, the resistance in ELRI element increases thus changes the state of MEMS or programmable component.
In at least one realizes, conductive path can have the ELR material of multilayer.Every one deck can have specifically (and may different) thickness.Modified layer can be connected to the more rigid top layer causing top layer.Along with the change of temperature, so will the change of the conductive characteristic of different layers be there is.Such as, top layer will have minimum resistance, and because top layer Direct Bonding is to modified layer, will work as superconductor or perfact conductor compared to other layers at higher temperature place.Along with the decline of temperature, layer subsequently will become less resistive and show more as about superconductor close to modified layer or perfact conductor.As understood, the change of temperature will change the conductive characteristic in different layers, and therefore will change Jc and Hc of ELRI.
In various implementations, MEMS can comprise one or more inner track, and the MEMS be made up of ELR material forms this inner track with the 2nd material modified MEMS layer comprising the ELR material being bonded to a MEMS layer.MEMS can also be configured to pass and use pressure sensor, temperature sensor, optical sensor, vibrating sensor, accelerometer, humidity sensor, electric-field sensor and/or sound transducer to sense one or more environmental parameter.
Various realization also provides the device with power supply and IC.This IC can have the one or more conductive paths be made up of ELRI, and this ELRI has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.In addition, IC can have the MEMS being connected to one group of passive block by one or more conductive path.In some cases, described MEMS can comprise the RF circuit of the RF antenna 4450 be coupled on IC.MEMS can also comprise one or more tunable transmission line, waveguide, resonator, quasi-optics assembly, tunable inductor, tunable capacitor and electromechanical filter and/or other assemblies as discussed above.
ELRI for passive block can use to produce the assembly close to desirable together with MEMS, otherwise for integrated be disabled, wherein can design the network of passive block, some are switches, and some MEMS are the transducers being exposed to different environmental constraints.Connect them by ELRI with insignificant ghost effect, integrated close to desirable component using as the expansion of MEMS with multiple and variable element or attribute.Can design on IC virtual close to desirable many-MEMS provides the magnitude of the larger ability of amplitude, it opens huge opportunity with sensitive context and makes electrical reaction.
In addition, be conducive to using other ELRI technology in IC product, with using this ELRI technology synergy.Example includes but not limited to, for MEMS circuit being connected to the ELRI of the analog circuit on IC, the ELRI (IC is connected to mounting substrates by it) of 3D interconnection on IC and the ELRI of the ELRI of the power distribution on IC or the power distribution on mounting substrates.These and other ELRI technology can improve the performance of IC product further.
Figure 45-F shows the flow chart 4500 of one group of exemplary operation for manufacturing conductive path, ELRIMEMS and/or ELRI assembly on IC.Can based on the application of the type of material, ELRI, the size using the assembly of ELRI, this ELRI such as manufacture such as the use equipment of ELRI or the job requirement of machine etc.
In the realization shown in Figure 45-F, the first electroless copper deposition operation 4510 deposits the ground floor of pole low resistance (ELR) material on IC, substrate or SiP.According to various realization, ground floor can comprise YBCO or BSCCO.During the second electroless copper deposition operation 4520, the ground floor of ELR material forming ELR interconnection deposits by the material modified second layer formed.The second layer can comprise chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium, beryllium, gallium, silver or selenium.Can select to be used as first of ELRI or the material of basic unit and/or be used as the material of modified layer of ELRI based on various consideration and desired work and/or manufacturing characteristics.Example comprises cost, performance objective, equipment availability, material availability and/or other Considerations and characteristic.Process operation 4530 processes this ELR and interconnects to form various assembly, conductive path and/or interconnection.Such as, in some implementations, can form ELRIMEMS, ELRI passive block, ELRIRF antenna, power distribution system and/or have can the signal bus of one or more conductive paths of Continuity signal.
Except system described herein, equipment and/or application, it will be recognized by those skilled in the art, comprise the other system of conductive path, equipment and application and can use ELRI described here.
Part C-integrated circuit RF equipment
This part of specification relates to Fig. 1-36 and Figure 37-G to Figure 41-G; Therefore all reference markers be included in this part relate to the element found in these accompanying drawings.
Various realization of the present invention is usually directed to extremely low-resistance interconnection (ELRI), such as comprise modification, the interconnection of with holes and/or other ELR materials.In some implementations, ELRI can have the ground floor that is made up of pole low resistance (ELR) material and comprise the material modified second layer being bonded to ground floor ELR material.This ELRI can be used in various system and method to produce various improvement.Some examples producing various efficiency include but not limited to, use the system and method for ELRI, semiconducter IC uses the system and method for the ELRI for RF antenna, use the system and method using ELRI in the system and method for ELRI and the embedding RF circuit function on semiconducter IC in the passive component of RF reflector on monolithic microwave IC (MMIC) and acceptor circuit in radio frequency (RF) circuit on IC.
Some realizations provide the circuit of the RF on IC, and it can use ELRI material to realize the conductive path of the RF circuit on IC.Use ELRI material can produce higher Q ability.Therefore, depend on desired application, in conductive path, use the IC of ELRI can need less active circuit and/or the less semiconductor regions for various circuit.In some implementations, ELRI can be used in connecting the multiple independent block of RF circuit and/or comprising the other technologies of other ELRI technology.
According to various realization, ELRI material can be used in realizing the conductive path for RF antenna arrangement on IC.The antenna arrangement obtained can have the region being less than the conventional substrate layout not using ELRI material.In addition, RF antenna can be arranged in the position of isolation and the loss of interconnection resistance can not occur, and not necessarily has sheet external tapping, thus obtains higher Q ability.Similarly, the RF antenna arrangement using the ELRI material in conductive path to cause can use less active circuit, and therefore uses the less semiconductor regions for various circuit.
In one or more implementations, ELRI can be used in the passive component of RF reflector on MMIC and acceptor circuit.By using ELRI material to realize the conductive path of passive component and/or connection RF circuit, signal transmission can be carried out with wavefront constant time of delay close to zero.Therefore, it is possible to almost eliminate or significantly reduce the signal delay between each function element.In some implementations, ELRI material can form reflector and the acceptor circuit of very high Q.
In addition, the system and method for ELRI is used in the embedding RF circuit function that various realization of the present invention provides on semiconducter IC.Realize at these some in, ELRI material can be used in realizing with close to zero the conductive path of wavefront constant time of delay signal transmission.Embedding between RF circuit function and subsystem envelope function therefore, it is possible to reduce significantly or even eliminate or be connected to the delay of the interface signal between each subsystem block embedding function.This makes these various pieces as dummy block will, in this sense, each respective connection signal seems to contact its respective embedding node, makes no matter relative to the actual physical location embedding RF circuit function, with insignificant parasitic variance, its execution represents as computer model.
Can based on the application of the type of material, ELRI, the size using the assembly of ELRI, ELRI such as manufacture such as the use equipment of ELRI or the job requirement of machine etc.Similarly, during Design and manufacture, the material of the basic unit being used as ELRI can be selected based on various consideration and desired work and/or manufacturing characteristics and/or be used as the material of modified layer of ELRI.
Although in order to layout and/or the deposition of modification ELR, at this illustrate and describe various suitable geometry and configuration, other geometries many are possible.Except material thickness, different layers use, have multiple adjacent modified layer ELR film, by the difference in multiple ELR film of single modified layer modification and other three-dimensional structures, these other geometries comprise, relative to the different pattern of length and/or width, configuration or layout.Therefore depend on desired application and/or characteristic, any suitable modification ELR can be used.
According to various realization of the present invention, ELRRF circuit and/or antenna can be realized on IC.RF circuit and/or antenna can use ELRI material, and such as modification, with holes and/or ELR material that other are new, to realize conductive path RF circuit being connected to antenna, and is arranged in the conductive path of RF circuit and/or antenna.It will be appreciated by those skilled in the art that the advantage using ELRI material can have a lot of beyond tradition interconnection material.
Although describe each example of the present invention with reference to the various configurations (ELR film etc. of such as modification) of " modification ELR material " and/or modification ELR material, but will understand, according to various aspects of the present invention, the any one of the ELR material of improvement described herein can be used, comprise, such as modification ELR material (such as modification ELR material 1060 etc.), ELR material with holes and/or other new ELR materials.As the described herein, in other respects, these ELR materials improved have the operating characteristic that at least one is improved, and this comprises in the ELR state be operated in higher than the temperature place of 150K in some instances.
Such as, there is not the loss of interconnection resistance by using the ELRIRF antenna that can be arranged in isolated location, not necessarily there is sheet external tapping, thus obtain higher Q ability.Similarly, less active circuit can be needed by the RF antenna arrangement using ELRI material to cause in conductive path, and therefore need the less semiconductor regions for various circuit.In some implementations, ELRI can be used in connecting the multiple independent block of RF circuit and/or comprising the other technologies of other ELRI technology.In addition, because ELRI produces extremely low loss, can Design and implementation RF antenna structure and circuit, otherwise will be unpractical on IC, and even can reduce active circuit significantly and amplify and filtering.
As another example, use ELRI that IC can also be made to design RF antenna arranged closer to have improvement conductive interconnection IC on RF circuit.This is tending towards causing lower parasitic drain to produce higher Q, makes it possible to simplified design requirement, such as, avoids special semiconductor technology and the outer design of encapsulation.In addition, it is infeasible for developing new RF product with prior art, such as, have the single-chip RF transceiver of higher Q.This possibility, such as, allows handheld instrument to access a large amount of segregated channel.
Figure 37-G shows the conductive path using ELRI material to realize the RF circuit on IC3710.In traditional integrated circuit, because isolation needs significantly special, more expensive semiconductor technology, realizing RF circuit away from outside the chip of controller function.But these techniques often do not meet the cost benefit of the digital circuit realizing such as controller function.On the contrary, with ELRI, RF antenna 3720 is directly connected to RF circuit, less parasitic loss can be run into, so can when realizing RF circuit without the need to when special isolation or other more expensive semiconductor technologies on the IC3710 of the chip identical with digital circuit.
According to various realization of the present invention, when ELRI material is for realizing conductive path 3730 and/or 3760 of the RF circuit on IC3710, higher Q ability can be obtained compared with not using the traditional circuit of ELRI material.In some implementations, ELRI can be used in connecting the independent block of RF circuit and comprising the other technologies of other ELRI technology.Therefore, less active circuit can be used by the RF circuit using ELRI material to cause in conductive path, and the less semiconductor regions for various circuit may be used.In some implementations, can realize RF circuit on microprocessor, microcomputer, microcontroller, Digital Signal Processing (DSP), SOC (system on a chip) (SoC), disk drive controller, ASIC, ASSP, FPGA and/or any other semiconducter IC in a variety of systems, wherein this various system is such as wireless USB, Wi-Fi or other RF transceiver interfaces.According to some aspect, use ELR will to reduce the noise being coupled to analog circuit from numeral as power supply and ground plane.
As shown in Figure 37-G, realizations more of the present invention provide the IC3710 comprising IC mounting substrates, RF antenna 3720 and RF circuit.IC mounting substrates can have multiple layer and the one or more conductive paths 3730 for signal path.Can by the obtained described one or more conductive path 3730 of the pole low resistance interconnect (ELRI) of modification, this interconnection has the ground floor be made up of pole low resistance (ELR) material.In addition, this one or more conductive path 3730 also can have the material modified second layer comprising and be bonded to ground floor ELR material.Certainly, modification ELRI can take any suitable composition or geometry.
In traditional integrated circuit, because parasitic drain, outside chip, realize described RF antenna away from controller function.On the contrary, there is ELRI RF circuit being connected directly to RF antenna 3720, be tending towards producing less parasitic drain, make it possible to realize RF antenna 3720 on the same chip of the RF circuit and digital circuit with common device.
It will be appreciated by those skilled in the art that various realization of the present invention can produce one or more advantage.Such as, as just discussed, use ELRI can provide the conductive capability of the unfavorable result reduced or eliminated due to (such as, due to interconnection resistance) parasitic drain.As another example, because ELRI produces extremely low loss, can design and Implement RF circuit, this will be more cost-effective, and otherwise will be unpractical.Can also develop and adopt prior art to be infeasible new RF product, such as, there is the single-chip RF transceiver of higher Q, allow handheld instrument to access a large amount of split tunnels.Due to the resistance loss reduced, some realization provides higher power-efficient.Some realize the susceptibility that will confirm for the increase of analog and digital signal.Exist and the possibility increasing flexibility in system features design element is being set.Further realization will confirm the signal fidelity improved.Also has the information density further realizing the increase that can demonstrate in the harmony and institute's distribution strip of interelement raising.Other are also had to realize making it possible to the software and hardware logic of the newtype realized on IC, or optionally signal disturbing shielding.
Realizations more of the present invention comprise integrated circuit (IC) 3710, have the RF assembly that can realize on IC or IC mounting substrates.RF assembly can comprise electronic circuit.As shown in this Figure 38-G, the RF controller 3830 (with other electronic circuits) that electronic circuit can be comprised RF amplifier 3810, RF filter 3820 and be interconnected by one or more conductive paths 3840 of comprising modification ELRI, wherein this modification ELRI has the ground floor that comprises ELR material and by the material modified second layer formed being bonded to ground floor ELR material.According to various realization, ground floor can comprise YBCO or BSCCO.The second layer can comprise chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium, beryllium, gallium or selenium.Interconnection can be formed by the multiple level/layers interconnected, some in them are formed ideally by modification ELRI (or traditional metal of other modes), each person is isolated by dielectric level adjacent with other, and wherein selectivity arranges conductive through hole through this dielectric to connect respective, continuous print conductive path.
In some implementations, RF assembly and RF antenna 3720 can be realized on the same chip.Such as, IC mounting substrates can also comprise RF antenna 3720, and described RF antenna 3720 comprises the ground floor of the antenna of ELR material and comprises the second layer of material modified antenna of the ELR material being bonded to the first antenna stack.Therefore, this RF assembly does not need the isolation by realizing on separate chips.
In some implementations, can wireless device be realized, comprise the RF transceiver of power supply, digital circuit group and/or use ELRI technology.Described wireless device can be any equipment or hand-hold type transceiver, and it can use RF transceiver or circuit.Example includes but not limited to, Wi-Fi equipment, spread-spectrum equipment, mobile phone, radio telephone, wireless USB apparatus, the garage door opener of equipment, wireless headset group, hearing aids, medical transponder, safety, radio-frequency (RF) identification (RFID) label, can to regulate in thermostat or property any the family expenses of awareness of safety, the telesecurity controller of commercialization or industrial equipment, handheld computer interface, automobile key reflector, RF interface security equipment, audio/video transceiver and a lot of other equipment.The safety means of this interface can comprise the Universal Remote safety governor (garage door opener of safety, the warning set/reset/inquiry of safety, thermostat programming, general electrical equipment control etc.) and car key reflector that control property safety.In addition, this wireless device can be the hand-hold type transceiver for special applications, as have the meter reading of special RFID label tag and inquiring stock, handheld computer interface ( program actuator and data collector) etc.
Use the wireless device of the ELRI being used for RF circuit can comprise various improvement.Such as, spread-spectrum equipment can be set up with the individual channel of huger magnitude (such as 100 or more individual channel).In addition, mobile phone, radio telephone, equipment, desktop computer and other computers and other Wi-Fi equipment will have larger reception/distance.In some cases, reception/distance can be similar to than conventional art can the higher magnitude of reception/distance.
In some implementations, RF transceiver can be coupled to power supply and digital circuit group.In some cases, RF transceiver can be positioned on the chip identical with digital circuit.RF transceiver can comprise the RF antenna 3720 being coupled to RF circuit.According to various realization of the present invention, RF circuit can comprise the one or more electronic circuits interconnected by one or more conductive path 3730 and/or 3760, wherein conductive path comprises modification ELRI, and this modification ELRI has the ground floor that comprises ELR material and by the material modified second layer formed being bonded to ground floor ELR material.In at least one realizes, RF antenna 3720 can comprise an ELR layer of RF antenna and the 2nd ELR layer of RF antenna, and wherein an ELR layer is made up of ELR material, and the 2nd ELR layer is made up of the modification material part of the ELR material being bonded to an ELR antenna stack.
In current technology, because need to be located at outside chip at the passive device at upper frequency place, therefore monolithic integrated microwave circuit (MMIC) is only at integrated MSI & LSI level place.Further, up to now, need can be unfavorable at the cost of the semiconductor technology of the transistor at microwave frequency place the product needing VLSI always.In one or more realization of the present invention, ELRI can be used in the passive component of RF reflector on MMIC and acceptor circuit.By using ELRI, the MMIC (such as, MMIC does not comprise the outer passive device of sheet or interface) of integrated all functions on the same chip can be produced, thus change its capacity.In some implementations, MMIC can comprise microprocessor, microcomputer, microcontroller, DSP, SOC (system on a chip) (SoC), disk drive controller, ASIC, ASSP and/or FPGA.
Realize passive component by using ELRI material and/or connect the conductive path of RF circuit, can with close to zero wavefront constant time of delay signal transmission.Therefore, it is possible to eliminate or significantly reduce the signal delay between each function element.In some implementations, reflector and the acceptor circuit of the very high Q of ELRI material forms in passive component 3740 is used in.ELRI for the passive component of high RF reflector and acceptor circuit will provide passive component, and interconnection negligible resistance can will make the capacity of microwave frequency circuit creation VLSI.Because all RF circuit can be manufactured on MMIC, carry out more than one step-additional microcontroller or DSP, in identical process, its capacity can be changed.
Can be able to make at very high frequency place by the amplification (VHQA) of very high Q using ELRI to produce, transmission has much lower power and much narrow frequency band.The grade of VHQA can be used in the walkie-talkie of personal communication in consumer product (within the scope of 2.4GHz), is used in reach and in military use more than the various frequency bands of 100GHz, and is used in frequency hopping.In other realize, described system and method can also be used for new metering and safety data transmission, the detection of such as safety sensor, and is also used in radar.In addition, transmit in order to the industry in new high frequency band and medical data and control, superfrequency transceiver can be set up.
Be conducive to using other ELRI technology in IC product, with using this ELRI technology synergy.Example comprises MEMSELRI technology, such as MEMS circuit 3770 being connected to the ELRI of the ELRI of the analog circuit on IC3710, the ELRI of the power distribution on IC3710, the ELRI (its interconnected 3730 IC is connected to mounting substrates 3750 by the ELRI " 3D " in encapsulation 3750) of the 3D interconnection 3730 on IC and even the power distribution on mounting substrates, all these improve the development of all ELRI technology further and especially improve the excellent properties of RFIC product.
Various realization of the present invention provides MMIC, by monolithic semiconductor (such as, silicon, GaAs, SiGe, GaN, SOS, SOI etc.) or obtain this MMIC by multiple semiconductors that " 3D " manufacture method that is stacking or other novelties is monolithically formed, comprise MEMS and/or the IC mounting substrates on IC3770 or the MEMS on SiP.MMIC can comprise ELRI group, have one or more passive component (such as, Laser programmable ELRI resistor 3910 and ELRI capacitor 3920 and 3740) RF filter 3820, RF oscillator 4090, RF amplifier 3810, RF controller 3830 and/or RF antenna 3720, and other RF block 4030 and back-up blocks.Realize according to some, ELRI can have the ground floor that comprises ELR material and comprise the material modified second layer being bonded to ground floor ELR material.In some implementations, RF amplifier can be connected to RF filter by ELRI.Similarly, RF antenna 3720 can be connected to RF amplifier 3810 by ELRI3840, and RF controller 3830 can be connected to RF filter 3820 by ELRI3840.
In some implementations, in one or more levels of interconnection, RF antenna 3720 has one or more conductive path, comprise the antenna ELRI of modification, the antenna ELRI of this modification has by ELR material (such as, YBCO or BSCCO) the first antenna stack of forming and comprise second antenna stack of material modified (such as, chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium, beryllium, gallium or selenium) of the ELR material being bonded to the first antenna stack.In addition, RF antenna 3720 can without the need to passing through to realize on separate chips the isolation with RF controller 3830.
This MMIC can be configured in various implementations to provide high-frequency switching, microwave mixer, low noise amplification or power amplification.This MMIC can also be configured to be operated in microwave frequency place, this microwave frequency between and comprise 300MHz and 300GHz.In at least one realizes, MMIC can be operated in the analog frequency place higher than 400MHz.In some implementations, can be all those part radio apparatus as discussed above at MMIC.
Conventional art adopts the interconnection usually formed by aluminium or copper base metal.Unfortunately, these interconnection have dead resistance, become critical degree for the time, the position of this dead resistance restriction embedded functional, and in many cases, forbid some in several functions, etc.In addition, because the propagation of dead resistance, by increasing more resistance to weaken in circuit easily or limiting load embedded program or optimum configurations, and therefore the RF function of embedding usually can not provided.On the contrary, various realization of the present invention is provided in the system and method using ELRI in the RF circuit function of the embedding on semiconducter IC 3710.Use ELRI to reduce or eliminate the restriction found with the use of conventional art, and improve the implementation of the RF circuit on IC3710.
These realize some in, ELRI material can be used in realizing conductive path, its for close to zero wavefront constant time of delay signal transmission.Therefore, it is possible to reduce significantly or almost eliminate between the RF circuit function embedded and subsystem envelope function or be connected to embedding function each subsystem block between the delay of interface signal.This makes these various pieces as dummy block will, in this sense, each respective connection signal seems to contact its respective embedding node, makes no matter relative to the actual physical location of the RF circuit function embedded, with insignificant parasitic variance, its execution represents as computer model.In some implementations, can the microprocessor embedded, microcomputer, microcontroller, DSP, SoC, ASIC, ASSP, FPGA and have identical or different type embedded functional any semiconducter IC on perform the RF circuit function of this embedding.
Various realization of the present invention can provide one or more benefits.Such as, in designing at the RF function IC embedded, use ELRI to connect up, the circuit of more speed can be produced, and there is no the remarkable skew between overall signal, also there is no the power loss because buffer requirements in the art causes.In addition, RF circuit can join in its SoC by the Chevron Research Company (CRC) having rare RF design experiences.In addition, many current RF function IC products can be redesigned, use (such as, operating voltage approximately or lower than 0.25 volt, and has low-down quiescent current in its operational amplifier) to embed ELRIRF function and to obtain higher performance and lower power.
In some cases, embedded functional can be arranged on all aspects relative to design on IC all more easily on position.Therefore, exploitation and the design of embedded RF function may less be limited, and do not need (in the conventional technology) usually to depend on the different custom interface buffer of the most parasitic aspect surrounding SoC.In addition, the independence that ELRI allows places " non-current engineering " (" Con-currentEngineering ") allowed better in SoC, because can design more independent by embedded functional, and more easily can embed the solution from each provenance.In some implementations, together with appended embedded kit (especially for the Chevron Research Company (CRC) with rare RF design experiences), embedded RF function can become " position & connects up " unit.
In some cases, the decision of ELRI is used to be conducive to using the decision of other ELRI technology be suitable for for embedded RF circuit.Example include, but are not limited to the ELRI for power distribution, the ELRI for clock routing or on IC and be connected to the ELRI of the SoC wiring of substrate, the ELRI of 3D interconnection, the ELRI of RF antenna on mounting substrates on IC and/or other.Designer can use various cost function to select suitable combination to complete RF products perfection.
Some realizations provide a kind of IC3710, its circuit group 4010 (such as, analog or digital circuit) and/or one or more programmable block 4020 of having IC substrate, realizing on IC substrate.In one or more layers of substrate, IC substrate can have one or more conductive path.Can form this conductive path by extremely low-resistance interconnection (ELRI), this extremely low-resistance interconnection has the ground floor that is made up of pole low resistance (ELR) material and comprises the material modified second layer being bonded to ground floor ELR material.By one or more conductive path, the first programmable block can be connected to this circuit group.First programmable block can be included in one or more assemblies that substrate realizes, such as but not limited to digital signal processor (DSP) 4035, the RF reflector 4040 being coupled to DSP4035; And/or the embedded core 4050 realized on IC substrate.
Realize according to some, embedded core 4050 can be programmable, to perform one or more function 4060.In various implementations, embedded core 4050 can be microprocessor, microcomputer, microcontroller, GPU, data flow processor or DSP.
Can also realize comprising the assembly that obtained by ELRI (such as on IC substrate, ELRIRF circuit 4070, ELRIRF antenna 4070, ELRI wiring 4080, ELRIRF amplifier, ELRIRF filter, ELRIRF controller, etc.) ELRI block group able to programme.According to desired application, ELRI block can be programmable at design level place, or field-programmable, or programmable in software after system cloud gray model.In some implementations, the IC with embedded functional 4060 can be all those part radio apparatus as discussed above.
Figure 41-G shows for using ELRI to manufacture RF circuit, RF antenna, to have the flow chart 4100 of the MMIC of passive ELRI assembly and/or one group of exemplary operation of embedded RF circuit function on IC.Can based on the application of the type of material, ELRI, the size using the assembly of ELRI, ELRI such as manufacture such as the use equipment of ELRI or the job requirement of machine etc.
In the realization shown in Figure 41-G, the first electroless copper deposition operation 4110 deposits the ground floor of pole low resistance (ELR) material on IC.According to various realization, ground floor can comprise YBCO or BSCCO.During the second electroless copper deposition operation 4120 deposition formed ELR interconnection, on the ground floor of ELR material by the material modified second layer formed.The second layer can comprise chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium, beryllium, gallium, silver or selenium.Can select to be used as first of ELRI or the material of basic unit and/or be used as the material of modified layer of ELRI based on various consideration and desired work and/or manufacturing characteristics.Example comprises, cost, performance objective, equipment availability, material availability and/or other Considerations and characteristic.Process operation 4130 process this ELR interconnect to form RF antenna, power distribution system and/or have can on substrate the signal bus of one or more conductive paths of Continuity signal.
Except system described herein, equipment and/or application, those skilled in the art will recognize that, comprise the other system of conductive path, equipment and application and can utilize ELRI described herein.
Part D-integrated circuit wiring
This part of specification relates to Fig. 1-36 and Figure 37-H to Figure 43-H; Therefore all reference markers be included in this part relate to the element in these accompanying drawings.
Describe the integrated circuit package formed by modification, with holes and/or other are new pole low resistance (ELR) material, such as power distribution network, clock distribution network and other signal distribution networks.Such as, ELR material can be film, band, paper tinsel or nano wire.For the electric current at the temperature place higher than the normal temperature relevant to current high-temperature superconductor (HTS) electric current, this ELR material provides pole low resistance, improves the operating characteristic of integrated circuit at these higher temperature places, and other benefits.Although the various configurations of reference " modification ELR material " and/or modification ELR material (such as, the ELR film etc. of modification) describe each example of the present invention, but will understand, arbitrary improvement ELR material described herein can be used, such as comprise according to the modification ELR material (such as, modification ELR material 1060 etc.) of various aspects of the present invention, ELR material with holes and/or other new ELR materials.As the described herein, except other aspects, these ELR materials improved have the operating characteristic that at least one is improved, and in some instances, comprise in the ELR state be operated in higher than the temperature place of 150K.
Figure 37-H shows the schematic diagram of the cutaway view of the conductive path 3700 be made up of modification ELR film at least in part, such as, have ELR material base layer 3704 and the film being formed in the modified layer 3706 in described basic unit 3704.Various suitable modification ELR film is described in detail at this.To understand, the ELR film of modification can have more than one ELR material layer and/or more than one modified layer, or can present any other suitable structure or geometry.Such conductive path can be used, when realizing in integrated circuits, except the special connecting through hole except being designed to connect respectively each continuous conduction path, in the multiple interconnect levels insulated to each other, these levels are used to come the density of arrangement convenience and connective (convenientdensityandconnectivity), such as, for distributing the signal between electric power and transmission circuit element, wherein circuit element is at microprocessor, microcomputer, microcontroller, digital signal processor, SoC, disk drive controller, memory, ASIC, ASSP, in FPGA or almost any other semiconductor integrated circuit that can obtain with modification ELR film compatible.
As shown in the example of Figure 37-H, the modified layer 3706 that described conductive path is comprised ELR material base layer 3704 and formed in basic unit 3704 by any applicable process.This conductive path can be formed on substrate 3702, the dielectric substrate of such as integrated circuit.For the flowing of electric current in conductive path under appropriate circumstances, such as be used in the temperature place in traditional HTS material higher than those, such as room temperature or ambient temperature (about 21 DEG C), the described conductive path 3700 that modification ELR film is formed provides little resistance or does not provide resistance.
Material or the size of substrate 3702 can be selected based on various factors.Such as, select the backing material with high dielectric constant usually will reduce the electric capacity embodied by transmission line, and therefore reduce the electric power needed for drive singal.It will be understood by those skilled in the art that to obtain characteristic desired by some and/or operating characteristic, this substrate can be formed by multiple different materials and this substrate-like becomes difformity.
In some instances, for the current flowing at the temperature place between the transition temperature (about 80 to 135K) and room temperature (about 294K) of traditional HTS material, the ELR conductive path of modification provides extremely low resistance.In these examples, conductive path can comprise cooling system (not shown), such as refrigeration machine or cryostat, the critical temperature of the type of the modification ELR film used for conductive path 3700 being cooled to this conductive path 3700.Such as, cooling system can be conductive path can be cooled to the temperature being similar to liquid fluorine Leon, the temperature being similar to chilled water or the system in these other temperature discussed.That is, the type of the modification ELR film that can use based on conductive path 3700 and structure choice cooling system.
Figure 38-H is the schematic diagram of the example model representing the conductive path formed by modification ELR film.In some instances, this model comprises input " I " and exports " O ".R iand R ocorrespond respectively to the resistance of the connecting material on the input and output side of the conductive path formed by the ELR film of modification.R v1, R v2, R v3and R v4correspond to the through hole from skin to conductive path and/or other resistance connected.R w1and R w2corresponding to the resistance of the inner track of the ELR film of modification.R s1-R s4and C s1-C s5corresponding to the outer field transmission line model of conductive path.The P place, position of each through hole on conductive path (or other connect) element surrounded by dotted line 3802 can be copied continuously.The example of Figure 38-H shows and is connected to conductive through hole (by R v4represent) and the branch B of output O terminal tandem paths 1.In some instances, this model can comprise multiple elements of inductor.
Due to the pole low resistance of conductive path formed by modification ELR film, the signal that described conductive path transmits has wavefront constant time of delay close to zero, thus minimizes the requirement driving intensity, which reduces power consumption.Because in the mode being similar to the waveguide do not hindered by external environment condition electric capacity, Signal transmissions is by the crystal structure of the ELR film of modification, and therefore signal trends towards reaching minimum delay.But this signal also transmits on the outside of the modification ELR film of bearing normal resistance and surrounding environment electric capacity thereon.Therefore, the signal transmitted by the crystal structure of modification ELR film can arrive destination node, and before described outside reaches its voltage changed completely the voltage of concept transfer.
Drive the reduction of requirement of strength also may cause the reduction of the transistor size of drive singal on the conductive path formed by modification ELR material.There is less transistor size and can reduce silicon area needed for integrated circuit layout to allow the miniaturization of further integrated circuit and to make circuit more effectively perform.Due to the delay reduced in Signal transmissions, another benefit of the conductive path formed by modification ELR material is in circuit design, reduce obstruction or the importance of sequential restriction.
As discussed in this, many integrated circuit (IC)-components and system can utilize, use and/or be included in high temperature or ambient temperature place shows extremely low-resistance modification ELR conductive path.That is, for electronic current provides almost any equipment in path or system can comprise modification ELR conductive path as the described herein.Part below describes some example apparatus, system and/or application.It will be understood by those skilled in the art that other equipment, system and/or application also can use the ELR conductive path of modification, that also have some uniquenesses with advantage that is novelty simultaneously, owing to not considering not to be also clearly.
In some instances, the power distribution network of integrated circuit can use modification ELR conductive path as the described herein.Figure 39-H is the schematic diagram of the example power distribution network 3900 formed by modification ELR conductive path.As shown in Figure 39-H, modification ELR material is used for realizing conductive path, such as conductive path 3902, due to the low resistance of modification ELR material, reduces voltage supply (V with the voltage distributed close to zero 1-V 4) to be connected with ground connection (G) and to be distributed in around integrated circuit.In some instances, because the ELR conductive path of modification can be directed, namely, current flowing is along the specific plane of modification ELR material, therefore the power distribution network 3900 of Figure 39-H layer that uses two of being coupled by the through hole of such as through hole 3904 substantially orthogonal, passes through integrated circuit to send electric power.
The power distribution network of traditional integrated circuit is divided into several power domain, and each has the specific voltage used by the assembly of described integrated circuit.In traditional integrated circuit, namely adopt the circuit in metallic conduction path, because for the resistance material of conductive path, each power domain has himself conductive layer usually.These traditional conductive paths have the significant resistance causing power consumption, by heat (I 2r) and by being used in attempt the larger or extra transistor alleviated in the transmission delay produced by resistance and produce these power consumptions.On power distribution conductor, need to drive " brute force " (" bruteforce ") of resistance signal line to cause noise, therefore must to its decoupling.And in a lot of situation, the voltage domain that design is separated is to be separated circuit noisy especially.But, due to the superior electrical conductivity of modification ELR material, in the integrated circuit using modification ELR conductive path, the territory of all voltage and ground connection can be routed in the orthogonal layer of as shown in figure 39 two and not need extra layer.Such as, voltage V 1, V 2, V 3all can be distributed on the integrated circuit of the two-layer power distribution network 3900 of use Figure 39-H with ground networks.
Other advantages many are from using the conductive path formed by modification ELR material.Such as, use the power distribution network of modification ELR material not only to reduce power consumption, and " IR falls " is reduced to negligible amount, this allows lower operating voltage according to this.This lower operating voltage reduces the parasitic leakage of transistor, thus improves the efficiency of whole circuit.In addition, due to the extremely fast transmission of signal in mELR, the noise pulse in power distribution network is transferred to all distributed decoupling capacitors immediately.And when modification ELRI is for sending signal, do not need " brute force " driver, so only have the noise jamming of much less.
Can such as microprocessor, microcomputer, microcontroller, DSP, SoC, disk drive controller, memory, ASIC, ASSP, FPGA and can with modification ELR film or compatible and obtained almost any other semiconductor integrated circuit of material on realize the power distribution network that formed by modification ELR conductive path.
In some instances, the clock distribution network of integrated circuit can use modification ELR conductive path as the described herein.Figure 40 A-H is the schematic diagram of the clock distribution network of the example formed by modification ELR conductive path.Figure 40 A-H comprises the clock driver 4002 be coupled with the trunk path 4004 of clock distribution network.As shown in Figure 40 A-H, the clock distribution network formed by modification ELR conductive path the clock signal of in the future self-clock driver 4002 can distribute to integrated circuit clock assembly, such as grid 4006.Trunk path 4004 is coupled with substantially vertical individual path, and such as, individual path 4008, clock signal is distributed to integrated circuit package by it.The clock distribution network of Figure 40 A-H also comprises parallel individual path, such as individual path 4010, and clock signal can be distributed to other circuit units by further.By connecting the through hole of substantially orthogonal layer, such as through hole 4012, individual path 4010 can be coupled with trunk path 4004.
An advantage of use modification ELR conductive path is, the clock signal transmitted over such networks has wavefront constant time of delay close to zero, and do not need extra buffer circuit or delay circuit, thus the transmission delay minimized between synchronous circuit and clock skew.
Figure 40 B-H shows the schematic diagram of the layout of the replacement of the clock distribution network formed by modification ELR conductive path.As shown in Figure 40 B-H, clock distribution network has the central trunk 4054 being coupled to supply the vertical branch of such as branch 4056 with clock driver 4052, according to this, clock buffer is supplied clock assembly, such as grid 4058.In one implementation, because the ELR conductive path of modification can be directed, namely, current flowing is along the specific plane of modification ELR material, therefore the clock distribution network of Figure 40 A-H and the 40B-H layer that uses two of being linked together by the through hole of such as through hole 4012 and 4060 substantially orthogonal, passes through integrated circuit with tranmitting data register signal.
Figure 40 C-H shows the schematic diagram of the layout of the replacement of the clock distribution network formed by modification ELR conductive path.As shown in Figure 40 C-H, clock distribution network has and is coupled to be supplied to the vertical branch of such as branch 4076 central trunk 4074 with clock driver 4072, according to this, clock assembly is supplied to by the geometric progression H structure of clock distribution network, such as grid 4078.In one implementation, because the ELR conductive path of modification can be directed, namely, current flowing is along the specific plane of modification ELR material, therefore the clock distribution network of Figure 40 A-H, 40B-H and 40C-H layer that uses two of being linked together by the through hole of such as through hole 4012,4060 and 4080 substantially orthogonal, passes through integrated circuit with tranmitting data register signal.
Use some advantages of the modification ELR material of the conductive path being used for clock distribution network to comprise, such as, because the conductive path cushioned and widen is to fall low-resistance additional capacitor, reduce the power from traditional resistor network and speed loss significantly.In addition, obviously reduce clock skew and insert delay, therefore reducing obstruction or the importance of design constraint.Similarly, multi-phase clock framework can be realized and owing to greatly reducing clock skew and still synchronous operation.Therefore, there is the synchronous integrated circuit structure of some complexity, it does not need transmit clock signal.These circuit use special software to guarantee their synchronism.In its synchronous control signal, these circuit can use modification ELR conductive path, just look like them are that clock is the same, to realize similar advantage.
Can such as microprocessor, microcomputer, microcontroller, DSP, SoC, disk drive controller, memory, ASIC, ASSP, FPGA and can with modification ELR film or compatible and obtained almost any other semiconductor integrated circuit of material on realize the clock distribution network that formed by modification ELR conductive path.
In some instances, the simulated assembly of integrated circuit can be coupled with using the compensating circuit of modification ELR conductive path as the described herein.Figure 41-H shows the block diagram of the simulated assembly be coupled with compensating circuit by modification ELR conductive path.The example block diagram of Figure 41-H comprises simulated assembly, such as amplifier, and as amplifier 4102, it is coupled with compensating circuit 4104 and 4106.As discussed previously, in one implementation, the ELR conductive path of modification can be directed, that is, current flowing is along the specific plane of modification ELR material.Therefore, in the example of Figure 41-H, the layer (such as 4110 and 4112) that two of being linked together by through hole (such as through hole 4108) can be used substantially orthogonal realizes the conductive path for being coupled with simulated assembly by compensating circuit, passes through integrated circuit to send signal.
When providing the compensating signal of self-compensation circuit, simulaed path is usually more complicated and useful.But conventional conductive path (such as aluminium or copper) introduces significant resistance, and this can reduce compensating signal and reduce the performance of whole system.The advantage using modification ELR conductive path signal transmission between simulated assembly and compensating circuit has the time constant close to zero, minimizes the resistance interference in compensation deals.
In addition, the traditional integrated circuit comprising simulated assembly is normally directed responsive, that is, must be spatial balance.If circuit is unbalanced, the resistance in conductive path can reduce performance and functional.Realize the conductive path formed by the modification ELR material of the resistance with reduction, alleviate most of problem of the position of single simulated assembly and integrated circuit.When design circuit, this permission considers that other are considered, such as space is considered.
In some instances, modification ELR film as the described herein can be used to realize the conductive path of memory.Such as, Figure 42-H is the block diagram realizing having the example memory of the conductive path of modification ELR conductive path.In the example of Figure 42-H, in order to Low threshold, high-speed memory " reading " function, memory uses modification ELR conductive path.By the through hole of such as through hole 4208, each memory cell 4202 is coupled with the address wire of bit line 4204 and 4206 and such as line 4210.Bit line 4204 and 4206 is coupled to make to realize bit line low-voltage with sensing amplifier 4212 senses.
The speed of semiconductor memory and precision are the sensings of the voltage based on memory cell.In some instances, pair of bit lines is connected to all unit on the particular row of unit.When the column selection line of such as line 4210 is enable, the complementary output of the memory cell 4202 on selected row is connected to respective bit line 4204 and 4206.When transistor driving bit line 4204 and 4206 of memory cell, if can distinguish which bit line for high and which bit line be low, sensing amplifier 4212 will provide output.In the conventional art with its resistive interconnections, by the design size (less unit produces less driving) of unit and the length (longer row causes the larger resistance-capacitance load driven for memory cell) of row, can compromise to described line charging and make sensing amplifier can detect the time consumed of difference.But the bit line that formed by modification ELR film allows the input of the transistor driving sensing amplifier of memory cell at once close to the voltage level stored, thus under faster sampling rate, only need minimum power with sensing and in response to these bit lines.
Design memory sensing amplifier is for the line length of specific semiconductor technology and specific memory.Due to dead resistance, legacy memory has limited line length, and therefore has less block.In order to realize reading times faster, legacy memory uses higher quiescent current, makes described sensing amplifier react faster, and without the need to waiting for that memory cell is to drive ohmic bit line to different logic states.Therefore, traditionally, memory is equal to higher power use faster.Because when Signal transmissions is in modification ELR film inside configuration, signal runs into the resistance and electric capacity that reduce effect, and therefore in the sensing amplifier with lower-wattage use, memory can produce sooner and read more accurately.In addition, the bit line formed by modification ELR film will allow larger block, and still uses the power of much less, and obtains higher performance.
In some instances, modification ELR conductive path as the described herein can be used to realize data/address bus in data flow processor and order line.Figure 43-H is the block diagram of the illustrative functions unit of the data flow processor 4300 with the conductive path formed by modification ELR material.Data flow processor comprises functional unit 4302, data/address bus 4306 and order line 4304.Modification ELR film as the described herein can be used to realize data/address bus 4306 and order line 4304.
In order to limit the limit of its performance, the speed that the processor set up according to data stream architecture depends on the command signal transmitted on order line is with n-back test and the signal that transmits on the data bus afterwards.Realize having the bus of modification ELR film and order line and produce the signal of wavefront constant time of delay had close to zero, thus minimize the requirement of actuating force, this reduces power.In addition, due to the transmission delay reduced, command signal almost will start function instantaneously, and data-signal by instantaneous transmission to the target indicated by them.
The operating frequency of traditional data flow processor is limited to the data/address bus caused by the resistance of conventional conductor and the transmission delay in order line.The conductor realizing having modification ELR material provides the performance of fast several order of magnitude of order line and data/address bus, and the array wherein interconnected in the framework realized is tactic.Such as, DSP application can process the frequency of fast several order of magnitude, RF receiver can the higher RF transport tape of demodulation, and with in the identical time span using the processor of conventional conductor to obtain, DSP can realize more complicated algorithm (that is, having the instruction of larger amt).
In some instances, some or all of system described herein and equipment can use low cost cooling system in the application, and wherein at the temperature place lower than ambient temperature, the particular modification ELR material list that this application uses reveals pole low resistance.As discussed in this, in these examples, this application can comprise cooling system (not shown), such as, modification ELR conductive path is cooled to the temperature being similar to liquid fluorine Leon, the temperature being similar to chilled water or the system in these other temperature discussed.The modification ELR film that can use based on this application and/or this application or the type of material and structure choice cooling system.
Except system described herein, equipment and/or application, it will be recognized by those skilled in the art, other integrated circuit (IC) system, equipment and application can use modification ELR conductive path described herein.In addition, when when this uses the term of such as " film " or " material ", should it is evident that, other structures or realization are possible and in required scope of the present invention.
Part E-integrated circuit SIP equipment
This part of specification relates to Fig. 1-36 and Figure 37-I to Figure 41 B-I; Therefore all reference markers be included in this part relate to the element found in these accompanying drawings.
Various realization of the present invention is usually directed to extremely low-resistance interconnection (ELRI), the ELRI of ELR material that such as comprise modification, that with holes and/or other are new.In some implementations, ELRI can have the ground floor that is made up of pole low resistance (ELR) material and comprise the material modified second layer being bonded to ground floor ELR material.This ELRI can be used in various system and method to produce various improvement.Some examples producing various efficiency include but not limited to, the system and method for the radio-frequency antenna on IC mounting substrates, power distribution in semiconducter IC mounting substrates and encapsulation on system (SiP) substrate and signal (such as, control, clock, data and other signal types) wiring on semiconductor mounting substrates.
Such as, when ELRI material is for realizing the conductive path for the RF antenna arrangement on IC mounting substrates, required region is tending towards being less than the conventional substrate layout not using ELRI material.In addition, RF antenna can be arranged in the position of isolation and the loss of interconnection resistance can not occur, thus obtains higher Q ability.Similarly, in conductive path, use ELRI material and the RF antenna arrangement obtained can need less active circuit, and therefore need the less semiconductor regions for various circuit.
In some implementations, the ELRI material conductive path that can be used in realizing voltage source (comprising multiple voltage domain) and grounding connection is using by the bus of wiring as the multiple parts to substrate.Because distributed Voltage change is close to zero, these paths form dummy node.In addition, the subsidiary noise spike of all high frequencies on power distribution conductor almost moves to all decoupling capacitors suppressing these spikes at once.
Except being provided for the conductive path of voltage source, ELRI material can be used in sending control, clock, data and other signals on IC mounting substrates (or SiP substrate).This ELRI material provides extremely low-resistance conductive path for signal.In some implementations, can in the layer of one or more pairs of basic orthogonal direction (except the conductive through hole of design, insulating between them) upper wire conductive path to be connected to any other assembly in IC pad, substrate pin or encapsulation.
Can based on the application of the type of material, ELRI, adopt the size of the assembly of this ELRI, adopt the equipment of ELRI or the job requirement of machine etc. manufacture ELRI.Similarly, during Design and manufacture, the material of the basic unit being used as ELRI can be selected based on various consideration and desired work and/or manufacturing characteristics and/or be used as the material of modified layer of ELRI.
Figure 37-I shows and uses the realization of ELRI material for the schematic diagram of the conductive path of RF antenna 3710 on mounting substrates 3750.In traditional integrated circuit, realizing RF antenna because of parasitic drain away from outside the chip of controller function.On the contrary, with ELRI, the RF circuit in IC3730 is directly connected to RF antenna 3710, runs into less parasitic drain, make it possible to the mounting substrates 3750 of RF circuit and IC3730 identical chips on realize RF antenna 3710.
According to various realization of the present invention, when ELRI material is for realizing the conductive path of the RF antenna arrangement on mounting substrates 3750, required region is less than the region in conventional substrate layout.In addition, RF antenna 3710 can be arranged in the position of isolation and the loss of interconnection resistance can not occur, thus obtains higher Q ability due to passive parasitic.Similarly, the RF antenna arrangement using ELRI material to cause in conductive path needs less active circuit, and therefore needs the less semiconductor regions for various circuit.
Those skilled in the art will appreciate that various realization of the present invention can produce one or more advantage.Such as, just as just discussed, use ELRI to provide conductive capability, this conductive capability allows antenna arrangement to be usually in the region less than conventional substrate layout and the loss of interconnection resistance can not occur in the position of isolation.As another example, because ELRI has extremely low loss, therefore, it is possible to design and Implement more cost-effective and more practical RF antenna frame.In some implementations, RF Antenna Design even significantly may reduce active circuit amplification and filtering.ELRI can also make this design realize the RF antenna of the RF circuit be connected to more closely on IC with the conductive interconnection improved, less parasitic drain of obtaining high Q, make it possible to reach its designing requirement and without the need to special semiconductor technology, and without the need to realizing outside the encapsulation of IC mounting substrates.Can also develop with prior art is infeasible new RF product, such as, have the single-chip RF transceiver of higher Q, allows handheld instrument to access a large amount of segregated channel.
According to various realization, RF antenna 3710 can be realized: microprocessor, microcomputer, microcontroller, computer storage, DSP, SoC, disk drive controller, ASIC, ASSP, FPGA, neural net, MEMS, MEMS array, micro-energy storage device together with following device, and for realizing any other IC mounting substrates of RF circuit antenna 3710.As shown in Figure 37-I, realizations more of the present invention provide integrated circuit (IC), comprise IC mounting substrates 3750, RF antenna 3710 and RF circuit 3730.IC mounting substrates 3750 can have multiple layer and the one or more conductive paths 3720 and 3740 for signal routing.Can by the obtained described one or more conductive path 3740 of the pole low resistance interconnect (ELRI) of modification, the pole low resistance interconnect of this modification has the ground floor be made up of pole low resistance (ELR) material.In addition, this one or more conductive path 3720 and 3740 can also have the material modified second layer being bonded to described ground floor ELR material.
Radio frequency (RF) antenna 3710 can be realized on IC mounting substrates 3750.RF circuit 3730 can also be realized on IC mounting substrates 3750, and by ELRI, RF circuit 3730 is connected to RF circuit 3730.In some cases, when compared to when not adopting the requirement of similar realization of ELRI, RF antenna 3710 can near RF circuit 3730.In some implementations, RF antenna can comprise the ground floor of ELR material and comprise the material modified second layer being bonded to ground floor ELR material.
Realize according to some, wireless device can comprise the power supply using the various configurations of ELRI to be coupled to RF transceiver.According to various realization, described RF transceiver can comprise mounting substrates, RF antenna and RF circuit.Mounting substrates can have one or more conductive path (3720 and 3740).In some cases, can form one or more conductive path by extremely low-resistance interconnection (ELRI), this extremely low-resistance interconnection has the first sublayer of comprising pole low resistance (ELR) material and comprises the second material modified sublayer being bonded to ground floor ELR material.Together with RF circuit, RF antenna can be implemented on mounting substrates.RF antenna can be connected to RF circuit by ELRI.In some implementations, RF antenna comprises the ground floor of ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
This wireless device can be any equipment or hand-hold type transceiver.Example includes but not limited to, spread-spectrum equipment, mobile phone, radio telephone, wi-Fi and Wi-MAX equipment, interface security equipment, earphone, hearing aids, medical transponder and other equipment many.The safety means of this interface can comprise the Universal Remote safety governor (set/reset/inquiry of safety garage door opener, security alarm, thermostat programming, general electrical equipment control etc.) and car key reflector that control property safety.In addition, this wireless device can be the hand-hold type transceiver for special applications, as have the meter reading of special RFID label tag and inquiring stock, handheld computer interface ( program actuator and data collector) etc.
The wireless device of the ELRI being used for RF antenna is used to comprise various improvement.Such as, spread-spectrum equipment can be set up with the individual channel of larger magnitude (such as 100 or more individual channel).Mobile phone and radio telephone, equipment and other Wi-Fi equipment will approximately have the magnitude of larger reception/distance.
Figure 38-I shows the flow chart of the one group of exemplary operations 3800 using ELRI design of material radio-frequency antenna.Realization according to Figure 38-I, receives operation 3810 and receives one group of designing requirement for RF transceiver.Designing requirement can be included in the RF antenna that integrated circuit (IC) mounting substrates realizes and the RF circuit realized on IC mounting substrates.In addition, the cost of various material, the type of Available Material, position limitation/requirement for various assembly, manufacture method, size of components, scope, Q factor, power requirement and other designing requirement can be comprised.Such as, in one implementation, designing requirement can comprise RF antenna and is close to RF circuit.
By one or more conductive path that connects up on IC mounting substrates, produce operation 3820 and produce design so that RF antenna is connected to RF circuit.This conductive path can comprise extremely low-resistance interconnection (ELRI), and it has the ground floor that comprises pole low resistance (ELR) material and comprises the material modified second layer being bonded to ground floor ELR material.Produce operation 3820 and consider extremely low-resistance interconnection and the impact on various designing requirement.
Verification operation 3830 checking meets this group designing requirement.If verification operation 3830 is determined not meet this design, perform additional design repetition by being branched off into generation operation 3820.Once verification operation 3830 is determined to meet this group designing requirement, by be branched off into manufacturing operation 3840 submit to for the manufacture of this design.
On the IC mounting substrates of such as BGA and PGA, usually there is the bus for power distribution.This guiding path of usual connection is to reduce from external power source to the resistance of any single IC power pad.Resistance in traditional design is still quite large and limit the performance of IC.In addition, IC plate creates usually multiple voltage domain with the resistance of isolation from the voltage supply node of each block be connected in the conductive path of external power source.In addition, resistance causes distributed Voltage " IR falls ", the iteration of its circuits for triggering design alleviates remedial measure (iterativemitigationremedies), comprises the multiple voltage domains (to stop another block of noise effect in a block) splitting into and have identical voltage.In addition, when resistance is so general, can not restraint speckle, therefore line keeps separately until more connect to the conduction of external source by this alleviation.
According to various realization, ELRI can be used in power distribution.Except manufacturing multiple voltage domain and earth bus makes " IR falls " negligible on substrate " virtual external power supply " node, ELRI wiring also reduces power consumption (being produced by the resistance of running current by substrate lines).Power supply on elimination line on " IR falls " permission connection IC and ground nodes, to be bonded to the dummy node on substrate, reduce the quantity of pad in some cases.
Figure 39-I shows the example layout schematic diagram of the power distribution 3900 using ELRI on substrate.ELR power distribution provides multiple voltage domain and grounding connection, and each online place has the voltage difference close to zero, and therefore for each given voltage, each IC power pad will be bonded to " virtual external power supply ".
In some implementations, the ELRI material conductive path that can be used in realizing voltage supply (comprising multiple voltage domain) and grounding connection is with by the bus connected up as running through layout.Because the change in voltage of distribution is close to zero, these paths form dummy node.In addition, all high frequency noise spikes move to all decoupling capacitors at once, wherein suppress or these spikes of decoupling.According to various realization, conductive path can on any IC mounting substrates or SiP substrate, such as BGA or the PGA substrate of single IC, or SiP or MCM substrate, or or even thin film passive component substrate or there is any system of one or more assembly on substrate.
More of the present invention realize providing IC to encapsulate 3910, comprise substrate, power bus 3920 and be coupled to one or more dummy nodes of pad 3930.Substrate can be BGA substrate, PGA substrate, SiP substrate, MCM substrate or thin film passive component substrate.Power bus 3920 can comprise and has low-resistance one or more conductive path, and in order to the power distribution realized on substrate, this low resistance produces insignificant IR and falls.One or more conductive path comprises the ground floor of pole low resistance (ELR) material and comprises the material modified second layer being bonded to ground floor ELR material.Form one or more dummy node by the grounding connection connected up at substrate perimeter, wherein each grounding connection comprises the 2nd ELR material and is bonded to the second material modified of the 2nd ELR material.
In some implementations, can arrange that one or more conductive path is to form multiple voltage domain.IC encapsulation 3910 can also comprise the one or more virtual external power supply nodes created from multiple voltage domain and grounding connection.Described IC encapsulation can be comprised one group of extremely low-resistance interconnection (ELRI) 3950 and is connected to the integrated circuit of virtual external power supply node by the one or more ELRI in this group ELRI.In some implementations, this integrated circuit can have the low voltage circuit of about 0.25 volt or lower operating voltage.In some implementations, described IC encapsulation 3910 can have multiple layer, and has as the multilayer power distribution in the multiple layers shown in by 3960.In some implementations, described IC encapsulation 3910 can also be comprised one group of wire bonding 3940 and is connected to one or more integrated circuits of virtual external power supply node by the one or more wire bondings 3940 in this group wire bonding.
Various realization of the present invention comprises the circuit with voltage supply, one or more integrated circuit and has the IC encapsulation 3910 from voltage supply to the power distribution of one or more integrated circuit.IC encapsulation 3910 can comprise substrate, power bus 3920 and one or more dummy node.According to various realization, substrate can be BGA substrate, PGA substrate, SiP substrate, MCM substrate, thin film passive component substrate or other.Power bus 3920 can have with the low-resistance one or more conductive path for realizing power distribution on substrate and can form multiple voltage domains with virtual external power supply node.Low resistance in conductive path causes insignificant IR to fall.In some implementations, described IC encapsulation 3910 can comprise multiple layers 3960 of the multilayer power distribution allowed in multiple layer 3960.
One or more conductive path can comprise the ground floor of pole low resistance (ELR) material and comprise the material modified second layer being bonded to ground floor ELR material.One or more dummy node can be formed by the grounding connection connected up at substrate perimeter.It is material modified be bonded to the 2nd ELR material second that each grounding connection can comprise the 2nd ELR material.
In some implementations, described circuit comprises one group of ELRI, by this group ELRI, one or more integrated circuit is coupled to virtual external power supply node.In other cases, this circuit can comprise one group of wire bonding 3940, by this group wire bonding 3940, one or more integrated circuit is coupled to virtual external power supply node.
Use the power distribution of ELRI on substrate to provide new method for packing and material as it will be understood by those skilled in the art that, use with remarkable noise decrease and the power in the redesign of existing product using IC.Because compact, control reliably under, power-edge will be supplied to IC pad, therefore the use of ELRI also will improve the Analog Circuit Design on IC.In addition, the possibility of infeasible new product is in the prior art set up in the use of ELRI.Such as, have some analog circuits on the IC of digital circuit, because voltage edge can not pass to IC pad, they can not work together in the prior art, but will be feasible in example of the present invention.Another example comprises and has the lower powered circuit and the circuit framework that become feasible novelty.In other cases, IC can use the electric power by using ELRI to capture from surrounding environment, and wherein this ELRI is for having to the RF antenna on the mounting substrates of the connection of IC.Other examples comprise needs the very low voltage circuit of pole low voltage drop encapsulation (in 0.25V working range or lower).Another example comprises, and has transducer by realizing in hardware and/or software and/or logic element and the reconfigurable IC of controlled mems switch.
Except providing conductive path for voltage supply, ELRI material may be used for sending the signal on IC mounting substrates (or SiP substrate).By providing the signal path close to zero resistance, the use of ELRI improves the quality of interconnection (exceeding prior art).In some implementations, can on the layer of one or more pairs of orthogonal direction wire conductive path be connected to IC pad, substrate pin or encapsulation in any other assembly.In a lot of situation, alleviate design remedial measure by the iteration eliminated because the sequence problem caused by the resistance of prior art is required at present, the use for the ELRI material of signal routing will reduce design time.The use of ELRI material can also be allowed for the edge than other assemblies otherwise met on the more IC of the designing requirement using prior art or substrate.
Various realization of the present invention comprises IC encapsulation, and it comprises the substrate with one group of assembly (such as, substrate pin, low-voltage IC etc.) and any required conductive path.According to various realization, substrate can be BGA substrate, PGA substrate, SiP substrate, MCM substrate, thin film passive component substrate or other.IC encapsulation can have multiple layer, and the plurality of layer allows to connect up one or more conductive path on the layer of one or more pairs of orthogonal direction, is wherein separated these layers by having the insulator being designed to the specific connecting through hole connecting all continuous conduction paths respectively.
Between one group of assembly, one or more conductive path provides interconnection and can comprise the interconnection of pole low resistance for sending signal on the substrate resistance of zero (that is, close to).Realize according to some, extremely low-resistance interconnection comprises the ground floor that is made up of pole low resistance (ELR) material and comprises the material modified second layer being bonded to ground floor ELR material.
Some realizations comprise circuit, and this circuit has voltage supply, one or more integrated circuit (such as, having the power stage driver of reduction) and IC encapsulation.Described IC encapsulation can have the one group of assembly (such as, IC pad, substrate pin etc.) by one group of signal transmission path interconnection, wherein between voltage supply and one or more integrated circuit, and this signal transmission path signal transmission.Described IC encapsulation can comprise substrate and signal bus.Signal bus can have one or more conductive paths that the signal on substrate sends.In some implementations, described one or more conductive path comprises pole low resistance (such as, close to zero) interconnection, this interconnection has the ground floor that is made up of pole low resistance (ELR) material and comprises the material modified second layer being bonded to ground floor ELR material.In some implementations, substrate can comprise RF antenna, and this RF antenna has the ground floor of the RF antenna comprising ELR material and comprises the second layer of material modified RF antenna of the ground floor ELR material being bonded to RF antenna.
As the skilled person will appreciate, conventional interconnect causes distributed Voltage " IR falls ", and the iteration of circuits for triggering design alleviates remedial measure, comprises more layer on substrate to send signal and to reduce the noise between each line.In addition, when resistance is so general, can not restraint speckle, therefore modal alleviation is kept being separated by each line and insulated from each other, and this uses more interconnection resource.The various realization of ELRI wiring reduces the power consumption produced by the electric current of the resistance running through substrate lines, except the voltage " IR falls " of signal is reduced to negligible quantity, also reduces the power of the waste of IC signal output driver.
Various realization uses the ELRI for sending the signal on IC mounting substrates.Use for sending the ELRI of signal will cause new method for packing and material, uses with remarkable noise decrease and the power in the redesign of existing product using IC.In addition because compact, control reliably under, signal edge will be passed to IC pad, therefore use ELRI to send signal and will improve Analog Circuit Design on IC.In addition, the ELRI being used for signal transmission is used to allow the generation of infeasible new product in the prior art.Because voltage edge can not pass to IC pad, example includes but not limited to, the analog circuit had on the IC of digital circuit that can not work together in the prior art.Circuit and the circuit framework with the novelty at low current, low-power and compacter edge will become feasible.By using the ELRI of the RF antenna on mounting substrates of the connection had to IC, IC can use the electric power obtained from surrounding environment.Other examples comprise needs the very low voltage circuit of pole low voltage drop encapsulation (in 0.25V working range or lower).
Figure 40-I shows the flow chart 4000 of one group of exemplary operation for the manufacture of the RF antenna using ELRI on substrate, power distribution system and/or signal bus.This ELRI can be manufactured based on the size of the assembly of the application of the type of material, ELRI, use ELRI, the use equipment of ELRI or the job requirement etc. of machine.
In the realization shown in Figure 40-I, the first electroless copper deposition operation 4010 is at the ground floor of deposited on substrates pole low resistance (ELR) material.According to various realization, ground floor can comprise any applicable material, such as YBCO or BSCCO.During the second electroless copper deposition operation 4020, the ground floor of ELR material creating ELR interconnection deposits by the material modified second layer formed.The second layer can comprise any applicable material, such as chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium, beryllium, gallium, silver or selenium.Can select to be used as first of ELRI or the material of basic unit and/or be used as the material of ELRI modified layer based on various consideration and desired work and/or manufacturing characteristics.Example comprises cost, performance objective, equipment availability, material availability and/or other Considerations and characteristic.Process operation 4030 processes the signal bus that this ELR interconnects to form RF antenna, power distribution system and/or has one or more conductive paths that can send signal on substrate.
In some instances, the conductive path formed by modification ELR material can be used in the integrated circuit of encapsulation.Such as, Figure 41 A-I have to be formed by modification ELR in the block diagram of integrated antenna package of packaging interconnection.Integrated antenna package 4402 comprises chip 4404 and 4406, and by the conductive path 4408 of the modification ELR material of chip 4404 and 4406 electric coupling.These chip chambers that such as copper and the conventional conducting materials of aluminium are generally used in integrated antenna package are connected.But by using the conductive path formed by modification ELR material, interchip communication is faster and more effective.
Another example of the modification ELR material be used in integrated antenna package has been shown in Figure 41 B.Integrated antenna package 4452 in Figure 41 B comprises chip 4454, chip is connected to the pin 4456 of external module and by the modification ELR nano wire 4458 of pin 4456 with chip 4454 electric coupling.In some instances, also pin 4456 can be formed by modification ELR material.From using the above-mentioned advantage being used for the modification ELR material of conductive path and recognizing, can be used in more quickly and effectively by Signal transmissions to system, within the system, the integrated circuit of encapsulation is assembly.
Except system described herein, equipment and/or application, those skilled in the art will recognize that comprise the conductive path that can use ELRI described herein other system, equipment, material and application.
In the accompanying drawings, lateral dimension and the variable thickness of various described element or the size of assembly and each layer are drawn surely in proportion, and can zoom in or out arbitrarily these different elements to improve legibility.Further, when such details is unnecessary for detailed description of the present invention, abstract component detail is to get rid of details in the accompanying drawings, and such as, between the accurate geometry of assembly or location and such assembly some accurately connects.When for understanding the present invention, when such details is unnecessary, being intended to shown representative geometry, interconnection and configuration is schematic universal design or operation principle, instead of exhaustive.
In some implementations, comprise the integrated circuit of modification ELR material, assembly and/or equipment can describe as follows:
A kind of integrated circuit, comprising: i/o pads; ESD protection circuit; Conductive path, is coupled i/o pads with ESD protection circuit; And ground networks, be coupled with ESD protection circuit; Wherein form described conductive path and described ground networks by pole low resistance (ELR) material, described pole low electrical resistant material is formed to be had the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
A kind of integrated circuit, comprising: dielectric substrate; Conductive path, be arranged in the dielectric substrate of integrated circuit, form described conductive path by modification pole low resistance (ELR) material, described modification pole low electrical resistant material has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material; And wherein said conductive path is laser modified part at least partially, laser modified part is made to have the resistance higher than the remainder of conductive path.
A kind of integrated circuit, comprising: dielectric substrate; Conductive path, be arranged in the dielectric substrate of integrated circuit, form described conductive path by modification pole low resistance (ELR) material, described modification pole low electrical resistant material has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material; And multiple parts of wherein said conductive path comprise at least one laser modified part, at least one laser modified part is made to have the resistance higher than the remainder of conductive path.
A kind of integrated circuit, comprise: conductive path, be arranged on the dielectric layer of integrated circuit, wherein form described conductive path by modification pole low resistance (ELR) material, described modification pole low electrical resistant material has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material; And magnetic field sources, for generation of the magnetic field affecting partially conductive path, make the modification ELR material of the influenced part of conductive path have the resistive larger than uninfluenced part.
A kind of integrated circuit, comprise: conductive path, be arranged on the dielectric layer of integrated circuit, wherein form described conductive path by modification pole low resistance (ELR) material, described modification pole low electrical resistant material has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material; And magnetoresistive RAM (MRAM) unit, for generation of the magnetic field affecting partially conductive path, make the modification ELR material of the affected part of conductive path have the resistive larger than uninfluenced part.
A kind of integrated circuit, comprising: dielectric substrate; Conductive path, be arranged in the dielectric substrate of integrated circuit, form described conductive path by modification pole low resistance (ELR) material, described modification pole low electrical resistant material has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material; And wherein conductive path has the size different from conductive path remainder with current limit limiting element at least partly, makes the critical current of current limiting element lower than the critical current of conductive path remainder.
A kind of integrated circuit (IC), comprise: multiple conductive path, at least one wherein in multiple conductive path comprises extremely low-resistance interconnection (ELRI), and described extremely low-resistance interconnection has the ground floor that comprises pole low resistance (ELR) material and comprises the material modified second layer being bonded to ground floor ELR material; Microelectromechanical systems (MEMS); And circuit group, be connected to MEMS by one or more conductive path.
A kind of integrated circuit (IC), comprise: one or more conductive path, comprise extremely low-resistance interconnection (ELRI), described extremely low-resistance interconnection has the ground floor that comprises pole low resistance (ELR) material and comprises the material modified second layer being bonded to ground floor ELR material; The network of one or more microelectromechanical systems (MEMS); And circuit group, be coupled to MEMS network by one or more conductive path.
A kind of integrated circuit (IC), comprise: one or more conductive path, comprise extremely low-resistance interconnection (ELRI), described extremely low-resistance interconnection has the ground floor that comprises pole low resistance (ELR) material and comprises the material modified second layer being bonded to ground floor ELR material; Microelectromechanical systems (MEMS); And one group of passive block, be connected to MEMS by one or more conductive path.
A kind of encapsulation of integrated circuit (IC), comprise: IC installs base substrate, have the one or more conductive paths be made up of extremely low-resistance interconnection (ELRI), described extremely low-resistance interconnection has the ground floor that comprises pole low resistance (ELR) material and comprises the material modified second layer being bonded to ground floor ELR material; Microelectromechanical systems (MEMS); And the network of assembly, be connected to MEMS by one or more conductive path.
A kind of microelectromechanical systems (MEMS), comprising: one or more assembly, and each comprises the ground floor with pole low resistance (ELR) material and the material modified second layer with the ELR being bonded to ground floor.
A kind of microelectromechanical systems (MEMS), comprising: input port, from MEMS external reception input signal; Assembly, is configured to receive input signal and produce response; And one or more conductive path, described assembly is connected to input port, to allow input signal to be transferred to described assembly, wherein said one or more conductive path comprises the ground floor of pole low resistance (ELR) material and comprises the material modified second layer being bonded to ground floor ELR material.
A kind of microelectromechanical systems (MEMS), comprising: output port; Assembly, is configured to produce signal; And one or more conductive path, described assembly is connected to output port, to allow by the Signal transmissions that produced by described assembly to output port, the ground floor that wherein said one or more conductive path comprises pole low resistance (ELR) material with comprise the material modified second layer being bonded to ground floor ELR material.
A kind of integrated circuit (IC), comprising: IC mounting substrates; And radio frequency (RF) assembly on IC mounting substrates, wherein said RF assembly comprises the electronic circuit interconnected by one or more conductive path, described conductive path comprises the extremely low-resistance interconnection (ELRI) of modification, and the extremely low-resistance interconnection of described modification has the ground floor that comprises pole low resistance (ELR) material and comprises the material modified second layer being bonded to ground floor ELR material.
A kind of integrated circuit (IC), comprise: radio frequency (RF) antenna, there is one or more conductive path, wherein said one or more conductive path comprises the extremely low-resistance interconnection (ELRI) of modification, and the extremely low-resistance interconnection of described modification has the ground floor that comprises pole low resistance (ELR) material and comprises the material modified second layer being bonded to ground floor ELR material.
A kind of monolithic integrated microwave circuit (MMIC), be made up of single piece of silicon, described MMIC comprises: extremely low-resistance interconnection (ELRI), has the ground floor that comprises pole low resistance (ELR) material and comprises the material modified second layer being bonded to ground floor ELR material; Radio frequency (RF) filter, comprises one or more passive component; RF amplifier, is connected to RF filter by ELRI; And RF antenna, be connected to RF amplifier by ELRI.
A kind of wireless device, comprise: monolithic integrated microwave circuit (MMIC), there is radio frequency (RF) transceiver and the acceptor circuit being coupled to power supply, wherein RF transceiver and acceptor circuit comprise: extremely low-resistance interconnection (ELRI), and described extremely low-resistance interconnection has the ground floor that comprises pole low resistance (ELR) material and comprises the material modified second layer being bonded to ground floor ELR material; Radio frequency (RF) filter, comprises one or more passive component; RF amplifier, is connected to RF filter by ELRI; And RF antenna, be connected to RF amplifier by ELRI.
A kind of integrated circuit (IC), comprise: IC substrate, have the one or more conductive paths be made up of extremely low-resistance interconnection (ELRI), described extremely low-resistance interconnection has the ground floor that is made up of pole low resistance (ELR) material and comprises the material modified second layer being bonded to ground floor ELR material; Circuit group, realizes on IC substrate; First programmable piece, be connected to this circuit group by one or more conductive path, and wherein first programmable piece comprise: realize the digital signal processor (DSP) on substrate; Be coupled to radio frequency (RF) reflector of DSP; And realize the embedded core on IC substrate, wherein said embedded core is programmable to perform one or more function and to be coupled to DSP; And one group of programmable ELRI block, comprise the assembly obtained by ELRI.
A kind of integrated circuit, comprising: substrate; And multiple conductive path, arrange over the substrate; Wherein formed at least one of multiple conductive path by modification pole low resistance (ELR) material, described modification pole low electrical resistant material has ELR material and is bonded to the material modified of ELR material.
A kind of integrated circuit comprises: the first assembly; Second assembly; And multiple conductive path, comprise the particular conductivity path the first electrical component being coupled to the second assembly; Wherein form described particular conductivity path by pole low resistance (ELR) film of modification, the pole low resistance film of described modification has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
A kind of power distribution network for integrated circuit, comprise: conductive path, for power electric being coupled at least one assembly of integrated circuit, described power supply is positioned at any one to the outside or inside of integrated circuit, and conductive path is arranged on a substrate of an integrated circuit; Wherein form described conductive path by pole low resistance (ELR) film of modification, the pole low resistance film of described modification has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
For a clock distribution network for integrated circuit, comprising: clock driver; With the trunk conductive path of clock driver electric coupling, form conductive path by pole low resistance (ELR) film of modification, the pole low resistance film of described modification has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material; And multiple branches conductive path, by multiple through hole and the electric coupling of trunk conductive path, form described multiple branches conductive path by the ELR film of modification.
For a signal distribution network for integrated circuit, comprising: multiple conductive path, arrange on a substrate of an integrated circuit; Wherein formed at least one of multiple conductive path by pole low resistance (ELR) film of modification, the pole low resistance film of described modification has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
A kind of integrated circuit, comprising: analog circuit; And compensating circuit, by conductive path and analog circuit electric coupling; Wherein form described conductive path by pole low resistance (ELR) film of modification, the pole low resistance film of described modification has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
A kind of integrated circuit, comprising: multiple memory cell; And sensing amplifier, with the memory cell electric coupling of multiple memory cell; Wherein by multiple conductive path, described multiple memory cell is coupled with described sensing amplifier, wherein formed at least one of multiple conductive path by pole low resistance (ELR) film of modification, the pole low resistance film of described modification has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
A kind of data flow processor, comprising: functional unit; With the bus of described functional unit electric coupling; And the order line to be coupled with described functional unit; Wherein form described bus and described order line by pole low resistance (ELR) film of modification, the pole low resistance film of described modification has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
A kind of integrated circuit (IC), comprise: IC mounting substrates, have the one or more conductive paths comprising the extremely low-resistance interconnection (ELRI) of modification, the extremely low-resistance interconnection of described modification has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material; Realize radio frequency (RF) antenna on IC mounting substrates; And realize the RF circuit on IC mounting substrates, wherein RF antenna is connected to RF circuit by ELRI.
An IC encapsulation, comprising: substrate; Power bus, has one or more conductive paths of the power distribution for realizing on substrate, and wherein one or more conductive paths comprise the ground floor of ELR material and comprise the material modified second layer being bonded to ground floor ELR material; And one or more dummy node, formed by the grounding connection connected up at substrate perimeter, wherein grounding connection comprises the first grounding connection layer of the 2nd ELR material and comprise the 2nd ELR material being bonded to the first grounding connection layer second the second material modified grounding connection layer.
A kind of signal routing footpath of the improvement for using on substrate, described signal routing footpath comprises one or more conductive path, the feature of described improvement be described one or more conductive path each comprise the ground floor of pole low resistance (ELR) material and comprise the material modified second layer being bonded to ground floor ELR material.
A kind of system in package (SiP), comprising: multiple chip; And conductive path, by the second chip electric coupling of the first chip of multiple chip and multiple chip; Wherein form described conductive path by pole low resistance (ELR) film of modification, the pole low resistance film of described modification has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
The rotary machine of the 9th chapter-formed by ELR material
This chapter of specification relates to Fig. 1-36 and Figure 37 A-J to Figure 42-J; Therefore all reference markers comprised in the portion relate to the element found in these figure.
Describe rotary machine, as motor, generator, energy conversion and/or flywheel, it comprises the assembly formed by modification, with holes and/or other is new pole low resistance (ELR) material.In some instances, rotary machine comprises the rotor with the winding that ELR material is formed, and has the stator of the winding that ELR material is formed, and/or other assemblies that ELR material is formed.Such as, the winding of rotor is made up of the modification ELR film with YBCO layer and modified layer.For the electric current at the temperature place higher than usual and current high-temperature superconductor (HTS) associated temperature, modification ELR material provides pole low resistance, improves the operating characteristic of rotary machine at these higher temperature places, and other benefits.
In some instances, according to the application of material type, ELR material, the size adopting the assembly of this ELR material, the equipment of employing ELR material or the job requirement of machine etc. manufacture ELR material.Therefore, during the Design and manufacture of rotary machine, the material of the basic unit being used as modification ELR film can be selected based on various consideration and desired work and/or manufacture characteristic and/or be used as the material of modified layer of modification ELR film.
Figure 37 A-J shows the schematic diagram of the rotary machine 3700 utilizing ELR material.Rotary machine 3700 comprises stator 3710 and rotor 3720 or armature.Described stator 3710, has the permanent magnet of " N " pole, north and contrary south " S " pole in this example, produce the magnetic field being arranged in gap 3712, it comprises the winding 3730 based on ELR of rotor 3720.Form winding 3730 by modification, with holes and/or that other is new ELR material, such as, there is ELR material base layer and the film being formed in the modified layer in described basic unit.Various suitable ELR material is described in detail at this.
By going between 3728, voltage (AC or DC) is applied to the winding 3730 based on ELR by battery 3726 or other power supplys, causes the electric current of flowing in based on the winding 3730 of ELR.For higher than those for traditional HTS material in as the current flowing in the winding 3730 at the temperature place of room temperature or ambient temperature (as at ~ 21 degrees Celsius of places), should little resistance be provided based on winding 3730 of ELR or not provide resistance.In the magnetic field of stator 3710, produce magnetic field based on the electric current in the winding 3730 of ELR, rotor 3720 produces moment of torsion and (namely rotor 3720 is rotated in gap 3712, winding 3730 inner rotary in the page) or otherwise relative to stator 3710, the axle 3724 of such as rotor 3720 or other supporting constructions and/or himself, such as, for not comprising the rotor of supporting construction.
In some instances, for the temperature place between the transition temperature (as at ~ 80 to 135K place) of traditional HTS material and room temperature (as ~ 294K), or the current flowing at other temperature places lower than the temperature around winding 3730 or relevant rotary machine, this ELR material forming winding 3730 or other assemblies provides pole low resistance.Such as, relative to the current flowing at temperature between 150K and 313K or higher temperature place, this ELR material can provide pole low resistance.
Figure 37 B-J shows the schematic diagram of the rotary machine 3750 with cooling system.Be similar to the rotary machine 3700 shown in Figure 37 A-J, this rotary machine 3750 comprises stator 3710 and has the rotor 3720 of the winding 3730 based on ELR, relative to the current flowing at different high temperature (as at T>150K place) place, pole low resistance should be provided based on the winding 3730 of ELR.This rotary machine 3750 comprises cooling system 3760, such as refrigeration machine or cryostat, for winding 3730 being cooled to the critical temperature for the modification ELR film type used in the winding 3730 of rotary machine 3750.Such as, this cooling system 3760 can be winding 3730 can be cooled to the temperature being similar to liquid freon, the temperature being similar to ice or the system in these other temperature discussed.That is, can based on the type of the ELR material be used in the winding 3730 of rotor 3720 and this cooling system of structure choice, and this winding 3730 can be cooled to the temperature lower than winding 3730 environment temperature by this cooling system.
In certain embodiments, this cooling system 3760 can comprise monitoring assembly (not shown) or communicate with.This monitoring assembly can monitor the temperature of ELR winding, rotor, stator and/or rotary machine, the resistivity of ELR assembly and other parameters, etc.During monitoring, when monitored parameter meets certain threshold value, this monitoring assembly can cause cooling system to increase and/or reduce the temperature or cooling agent that apply.Such as, if the temperature of monitoring rises to the critical temperature higher than (or close) ELR material, then this monitoring assembly can cause cooling system to reduce the temperature of ELR material.Certainly, it will be understood by those skilled in the art that when monitoring and/or adjust the operation of cooling system, can other technologies be utilized.
Although illustrate with usual pattern in Figure 37 A-J and 37B-J, rotary machine 3700 or 3750 can be DC motor, AC motor, generator, alternating current generator, machine or can convert electrical energy into machine energy and/or a kind of electric energy of form are converted to the other machines of electric energy (such as AC to DC) and the equipment of another kind of form to electric energy transducer, inverter.Discuss in detail further about benefiting from the various rotary machines implementing ELR material at this.
Except (standalone) winding isolated in Figure 37 A-J and 37B-J, can based on many factors, comprise the type of rotary machine, the use of rotary machine or application, the size of rotary machine, the operation element of rotary machine require, the type of ELR material etc., configure the rotor 3720 of rotary machine 3700 in a different manner.Figure 38 A-J to 38G-J be for the employing modification in rotary machine, porous and/or the schematic diagram of different rotor of ELR material that other are new, but it will be understood by those skilled in the art that not concrete other rotors discussed also can be used in this ELR material discussed.
Figure 38 A-J is the schematic diagram that the rotor 3800 with the winding formed by ELR film 3802 and the supporting construction 3804 that supports modification ELR film 3802 is shown.Such as by ELR film being formed as band, paper tinsel or other similar assemblies, this ELR film 3802 can be formed in supporting construction 3804.This supporting construction 3804 can be formed by iron or other suitable materials (such as other magnetic materials, pottery, amorphous metal etc.), other suitable materials described can provide support ELR film, provide intensity to the magnetic field that the current flowing through ELR film 3802 produces, etc.
Exist for generation of the various technology with manufacture ELR material webs.In some instances, this technology comprises deposition YBCO or other ELR materials are being coated with on the flexible metal band cushioning metal oxide, formation " coated conductor ".During processing, such as by using rolling to assist biaxial texture (rolling-assisted, biaxially-textured) substrate (RABiTS) technique, texture can be introduced in metal tape self, or utilize Assisted by Ion Beam, such as by using ion beam assisted depositing (IBAD) technique, can be deposited on there being the ceramic resilient coating of texture to substitute in not textured alloy substrate.The interpolation of oxide layer prevents metal from diffusing into ELR material from band.Other technologies can utilize chemical vapour deposition (CVD) CVD technique, physical vapour deposition (PVD) (PVD) technique, atom, and molecular beam epitaxy (ALL-MBE) and/or other solution deposition techniques are with to produce modification ELR layer by layer.
Figure 38 B-J shows the schematic diagram having and be formed as based on the winding of the wire 3812 of ELR and the rotor 3810 of supporting layer 3814.Although this wire 3812 is formed in the supporting layer 3814 in accompanying drawing, in some cases, this wire can isolate or be formed around supporting layer 3814.
When forming ELR line, multiple ELR band or paper tinsel are combined together to form micro wire with sandwich structure.Such as, winding can comprise supporting construction and one or more ELR band of being supported by this supporting construction or paper tinsel.
Except ELR line, winding described herein can be formed by ELR nano wire.In conventional term, nano wire has nanostructure on tens nanometer or less magnitude of width or diameter and general not limited length.In some cases, ELR material is formed as having in the width of 50 nanometers and/or the nano wire of the degree of depth.In some cases, ELR material is formed as having in the width of 40 nanometers and/or the nano wire of the degree of depth.In some cases, ELR material is formed as having in the width of 30 nanometers and/or the nano wire of the degree of depth.In some cases, ELR material is formed as having in the width of 20 nanometers and/or the nano wire of the degree of depth.In some cases, ELR material is formed as having in the width of 10 nanometers and/or the nano wire of the degree of depth.In some cases, ELR material is formed as having in the width of 5 nanometers and/or the nano wire of the degree of depth.In some cases, ELR material is formed as having and is less than in the width of 5 nanometers and/or the nano wire of the degree of depth.
Figure 38 C-J describes to have by ELR material as modification ELR is with or the schematic diagram of rotor 3820 of the winding 3822 that formed of line and core or axle 3824 (such as iron core).In some cases, based on the winding number of required torque or other selecting factors windings 3822 on rotor 3820.In some cases, the material type of winding 3822 and/or core 3824 is used for based on required torque on rotor 3820 or other selecting factors.
Figure 38 D-J describes to have by ELR material as modification ELR is with or the winding 3822 that formed of line and justify the schematic diagram of rotor 3830 of core or axle 3824 (such as iron core).In some cases, based on the winding number of required torque or other selecting factors windings 3822 on rotor 3830.In some cases, the material type of winding 3832 and/or core 3834 is used for based on required torque on rotor 3830 or other selecting factors.
Figure 38 E-J depicts the schematic diagram of the rotor 3840 with the bar 3842 formed by ELR material (as modification ELR is with or the nano wire) bar 3842 that formed and supporting construction 3844.This rotor 3840 is similar to squirrel-cage rotor of the prior art or other similar rotors.
Figure 38 F-J depicts the schematic diagram of the rotor 3850 with the ring 3852 and one or more supporting construction 3854 formed by ELR material.In some cases, ELR ring 3852 can be a continuous loop of the rotating shaft around rotor 3850.In some cases, this ELR ring 3852 can be the two or more discrete ring of the rotating shaft around rotor 3850.
Figure 38 G-J describes the schematic diagram of the rotor 3860 with multiple band or bar 3862 and the supporting construction 3864 formed by ELR material (as modification ELR is with or nano wire).In some cases, ELR band or bar 3862 are formed in supporting construction 3864, and it extends the length of rotor 3860.In some cases, supporting construction 3864 supports the end of described band or bar 3862, and described rotor 3860 is structurally similar to squirrel-cage rotor.
As mentioned above, it will be understood by those skilled in the art that expectation described herein uses the rotor of ELR material can take to be different from the structure described by Figure 38 A-J to Figure 38 G-J.Namely saying, distinct methods can be adopted to manufacture this ELR material in order to realize desired structure.In order to produce magnetic field, this ELR material can be formed in line, band, bar, bar, nano wire, film, paper tinsel, other shapes or the structure that can move or carry the electric current put to another by any and/or other geometries.Although describe and show some the suitable geometries for some windings, rotor, stator and/or other assemblies, but other geometries multiple are also feasible herein.Except different at material thickness, utilize except in different layers and other three-dimensional structures, about length and/or thickness, these other geometries comprise different patterns, structure or layout.
In some instances, can by the type using the application type of ELR material to determine the ELR in winding and/or other assemblies or device.Such as, some application use the ELR material with BSCCOELR layer, but other application can adopt YBCOELR layer.In other words, inter alia, based on the type of the machine or assembly that use ELR material, ELR material described herein can be formed as in ad hoc structure (as band or line) and to be formed (as YBCO or BSCCO) by certain material.
Except rotor, other assemblies of rotary machine use ELR material described herein.Such as, stator has lead-in wire (as battery lead) between conductive winding, assembly and/or other assemblies, and it can adopt ELR material.Present discussion various rotary machine and the assembly using ELR material described herein.
Figure 37 A-J and 37B-J describes the rotary machine with rotor, and this rotor has and under the low resistance of pole, transmits electric current thus the modification ELR film winding producing magnetic field.But in some cases, rotary machine can comprise the stator with modification ELR film winding, this modification ELR film winding transmits electric current thus produce magnetic field in the space of placing rotor.Figure 39-J is the schematic diagram of the rotary machine 3900 with rotor, and its rotor has ELR winding.This rotary machine 3900 comprises stator, the winding 3914 that this stator has supporting mechanism 3912 and formed by modification, porose and/or other new E LR materials, as modification ELR line or belt.Rotor 3920 is arranged in the space 3915 of stator 3910.This rotor 3920 comprises one or more ELR assembly, as the bar 3922 kept together by supporting construction 3924.
As described herein, ELR winding 3914 and/or ELR bar 3922 can adopt various different materials to be formed in every way.Such as, this winding can be with by modification ELR or line is formed.
Thus, ELR material described herein can be used as the various different assembly of rotary machine or uses wherein, comprise as rotor winding or for wherein, as stator winding or for wherein, as bar or rotor or for wherein, be used as band or for wherein, as ring or for wherein, as the lead-in wire or other Connection Elements etc. of inter-module.Most rotary machine, comprise motor, generator, alternating current generator, rotating energy converters (AC-DC, DC-DC, DC-AC), flywheel and other can use this film.Some embodiments of present discussion.
Figure 40-J is the schematic diagram of the brushless DC motor 4000 adopting ELR material.This brushless DC motor 4000 comprise the stator 4010 formed by permanent magnet, the rotor 4020 formed by core 4022 (as iron, pottery, amorphous metal, air) and based on the winding 4024 of ELR, axle 4021 or be convenient to the rotation of rotor 4020 in stator 4010 other support, the commutator 4028 being flowed to the brush 4026 of the electric current of winding 4024 and the winding 4024 of reversing rotor 4020 by current source 4030 be provided.
Various types of brushless DC motor or stepping motor can utilize modification ELR film as various assembly or for wherein, comprise permanent magnetism brush DC (PMDC) motor and swash brush DC (SHWDC) motor, series excitation brush DC (SWDC) motor, compounding (CWDC) motor etc.
Figure 41-J describes the schematic diagram of the brushless type DC motor 4100 adopting ELR material.This brushless type DC motor 4100 comprises the stator 4110, hall effect sensor 4116 and the Hall effect commutator 4118 that are formed by supporting construction 4114 and modification ELR film winding 4112 and the rotor 4120 formed by permanent magnet rotated in stator 4110.Various types of brushless DC motor or electronically commutated motor, can utilize ELR material as assembly or for wherein.
Figure 42-J describes the schematic diagram of the AC motor 4200 adopting ELR material.This AC induction machine 4200 comprise have around the magnetic pole 4212 of stator 4210 around the stator 4210 of ELR winding 4214 and rotor 4220, other supporting constructions that there is conducting element 4222 (can be ELR material) and axle 4224 or rotate in stator 4210.
All kinds AC motor utilizes ELR material as assembly or for wherein, comprises monophase machine (as phase-splitting induction machine, capacitor start induction machine, permanent magnet split-phase capacitor induction machine, capacitor start/capacitor operating induction machine, shaded pole AC induction machine etc.) and three-phase induction motor (as mouse cage shape motor, winding rotor motor etc.)
Certainly, it will be understood by those skilled in the art that other rotary machines can adopt ELR material described here, comprise general-purpose machine, printing armature or minor axis type motor (pancakemotor), servomotor, electrostatic motor, torque motor, stepping motor, wheel hub motor, fan electromotor, generator, alternating current generator, hollow motor, flywheel, magnetic powder cluth, power machine, and/or other rotary machines.
Various rotary machine described herein by adopting modification, porose and/or other new E LR materials can perform the operating characteristic improved or strengthen.Such as, this rotary machine shows from the less ohmic loss of various conductive component resistance as winding, lead-in wire, capacitance component etc.Adopt the device with the rotary machine of the operating characteristic of improvement correspondingly can be of value to the improvement of type thus.Adopt and utilize the device embodiments of the rotary machine of modification ELR material to comprise fan, turbine, awl, pump, electric train, Electricmotor car wheel, engine traction, electronics clutch, conveyer belt, robot, means of transportation, instrument, engine, manufacturing equipment, information storage system as hard drive, body-building equipment, artificial limb equipment, ectoskeleton, toy, roller skate/skates, lawn and garden furniture, shoes, furniture and other majorities.
In some embodiments, the rotary machine comprising modification ELR material is described below:
A kind of rotary machine, comprising: stator module; And be set to the rotor assembly that rotates in stator module, the wherein rotor assembly winding that comprises supporting construction and formed by ELR material.
For the rotor in rotary machine, this rotor comprises: supporting construction and being coupled with this supporting construction and the winding formed by modification ELR material.
A kind of rotary machine, comprising: stator; And rotor, wherein this rotor is by providing extremely low-resistance material to be formed in the temperature higher than 150K to electric current under standard pressure.
For the rotor assembly in rotary machine, this rotor assembly comprises: the cored structure formed by magnetic material; And be configured to transmit the modification ELR film of electric current, wherein this modification ELR film is by comprising the ground floor of ELR material and comprising the material modified second layer being bonded to ground floor ELR material and formed.
For the stator module in rotary machine, this stator module comprises: supporting construction; And be configured to transmit the modification ELR film of electric current, wherein this modification ELR film is by comprising the ground floor of ELR material and comprising the material modified second layer being bonded to ground floor ELR material and formed.
A kind of winding, be configured to transmit electric current to form magnetic field in rotary machine, this winding comprises: ground floor, and wherein ground floor comprises ELR material; And the second layer, wherein this second layer comprises and is bonded to the material modified of ground floor ELR material.
A kind of rotary machine, comprising: stator module, wherein this stator module winding of comprising supporting construction and being formed by modification ELR material; And be arranged in the rotor rotated in stator module.
For the stator in rotary machine, this stator comprises: supporting construction; And be coupled and the winding formed by modification ELR material with this supporting construction.
A kind of rotary machine, comprising: stator; And rotor, wherein this stator is by providing extremely low-resistance material to be formed in the temperature higher than 150K to electric current under standard pressure.
A kind of rotary machine, comprising: stator module; And be set to the rotor assembly that rotates in stator module, the wherein rotor assembly winding that comprises supporting construction and formed by modification ELR material; And the temperature maintaining the winding formed by modification ELR material is in the cooling system between 135K and 273K.
A kind of rotary machine, comprising: stator module, wherein the stator module winding that comprises supporting construction and formed by modification ELR material; Be set to the rotor assembly rotated in stator module; And cooling system, maintain the temperature of the winding formed by modification ELR film lower than the temperature around winding.
A kind of rotary machine, comprising: stator; Rotor, wherein this rotor provides extremely low-resistance material to be formed by the temperature between 150K to 313K to electric current; And cooling package, maintaining provides extremely low-resistance material to be in electric current or lower than the critical temperature of this material.
A kind of DC motor, comprising: stator module, and wherein this stator module comprises the space being configured to hold rotor assembly; And being configured to the rotor assembly that rotates in the space of stator, this rotor assembly comprises: the cored structure formed by magnetic material; And be configured to transmit the modification ELR material winding of electric current, wherein modification ELR material is by comprising the ground floor of ELR material and comprising the material modified second layer being bonded to ground floor ELR material and formed.
A kind of AC induction machine, comprising: rotor assembly, be configured to rotate in the space of stator module, wherein this rotor assembly is formed by magnetic material; And stator module, be configured to provide the space wherein holding rotor assembly, this stator module comprises: supporting construction; And be configured to transmit the modification ELR material of electric current, wherein this modification ELR material is by comprising the ground floor of ELR material and comprising the material modified second layer being bonded to ground floor ELR material and formed.
A kind of brushless DC motor, comprising: the stator formed by permanent magnet; And the rotor to be formed by iron core and modification ELR winding, wherein this modification ELR winding at ambient temperature almost zero resistance ground transmit electric current.
A kind of DC motor, comprising: stator module, and wherein this stator module comprises the space being configured to hold rotor assembly; And be configured to the rotor assembly that rotates in the space of stator, this rotor assembly comprises: be configured to transmit the modification ELR material winding of electric current, and wherein this modification ELR material is by comprising the ground floor of ELR material and comprising the material modified second layer being bonded to ground floor ELR material and formed.
A kind of AC induction machine, comprising: rotor assembly, be configured to rotate in the space of stator module, wherein this rotor assembly is formed by magnetic material; And stator module, be configured to provide the space wherein holding rotor assembly, this stator module comprises: supporting construction; And be configured to transmit the modification ELR material of electric current, wherein this modification ELR material is by comprising the ground floor of ELR material and comprising the material modified second layer being bonded to ground floor ELR material and formed.
A kind of brushless DC motor, comprising: the stator formed by permanent magnet; And the rotor to be formed by non-magnetic core and modification ELR winding, wherein this modification ELR winding transmits electric current close to zero resistance at ambient temperature.
A kind of vehicle, comprising: DC motor, wherein this DC motor comprises: stator module, and wherein this stator module comprises the space being configured to hold rotor assembly; And being configured to the rotor assembly that rotates in the space of stator, this rotor assembly comprises: the cored structure formed by magnetic material; And be configured to transmit the modification ELR material winding of electric current, wherein this modification ELR material is by comprising the ground floor of ELR material and comprising the material modified second layer being bonded to ground floor ELR material and formed.
A kind of motor vehicle comprises: induction machine, and wherein this induction machine comprises: be configured to the rotor assembly rotated in the space of stator module, wherein this rotor assembly is formed by magnetic material; Stator module, wherein this stator module is configured to provide the space holding rotor assembly; This stator module comprises: supporting construction; And be configured to transmit the modification ELR material of electric current, wherein this modification ELR material is by comprising the ground floor of ELR material and comprising the material modified second layer being bonded to ground floor ELR material and formed.
A kind of moving vehicle, comprising: supporting construction; Multiple rotary machine, eachly comprises at least one modification ELR assembly; The cooling system be coupled with multiple rotary machine, is configured to the temperature of at least one modification ELR assembly to be maintained lower than the temperature around at least one modification ELR assembly; And the supervision assembly to be coupled with cooling system, be configured to the state monitoring at least one modification ELR assembly.
A kind of apparatus, comprising: DC motor, wherein DC motor comprises: stator module, and wherein this stator module comprises the space being configured to hold rotor assembly; And being configured to the rotor assembly that rotates in the space of this stator, this rotor assembly comprises: the cored structure formed by magnetic material; And be configured to transmit the modification ELR material winding of electric current, wherein this modification ELR material is by comprising the ground floor of ELR material and comprising the material modified second layer being bonded to ground floor ELR material and formed.
A kind of electrical equipment, comprising: induction machine, wherein this induction machine comprises: be configured to the rotor assembly rotated in the space of stator module, wherein this rotor assembly is formed by magnetic material; And being configured to provide the stator module in the space wherein holding rotor assembly, this stator module comprises: supporting construction; And be configured to transmit the modification ELR material of electric current, wherein this is material modified by comprising the ground floor of ELR material and comprising the material modified second layer being bonded to ground floor ELR material and formed.
A kind of system, comprising: based on the sub-component of ELR, comprising: the assembly formed by modification ELR material at least partly; And be configured to hold or discharge the coolant interface being in the cooling agent of ELR state for maintaining this modification ELR material.
A kind of rotary machine, comprising: electrically sub-component, and wherein this electric sub-component comprises modification or porose ELR material and is configured to receive electric energy; And gyrator assembly, wherein this gyrator arrangement of components is for providing rotation energy based on received electric energy.
The bearing that 10th chapter-ELR material is formed
The description of this chapter relates to Fig. 1-36 and Figure 37 A-K to Figure 41-K; Corresponding whole Ref. No.s in the portion relate to appearance element in the drawings.
Described bearing assembly (such as the bearing in rotary machine) comprises the assembly formed by modification, porose and/or other polar low electrical resistant materials (ELR).In certain embodiments, this bearing assembly comprises the bearing or other assemblies formed by ELR material with winding and/or the coil formed by ELR material.Such as, the winding of bearing is made up of the modification ELR film with YBCO layer and modified layer.Except other advantages, in the temperature higher than usually normally relevant to electric current high-temperature superconductor (HTS) temperature, this ELR material provides extremely low resistance to electric current, improves the operating characteristic of bearing assembly under these higher temperatures.
Bearing assembly as described here, such as, adopt the bearing assembly of floating rotating bearing, can adopt various ELR element, such as modification ELR element.Figure 37 A-K is the block diagram of the appropriate circuitry 3700 comprising the bearing assembly using ELR material.This circuit 3700 is included in the element providing, control, change and/or maintain electric current in the ELR coil of bearing assembly 3710 or winding.This circuit 3700 comprises switch 3730, power supply 3735, controller 3750 and optional cooling system 3720.Power supply 3735 provides electric power by switch 3730 to bearing assembly 3710, thus at the ELR coil of bearing assembly or winding or middle generation current.Controller 3750 controls the applying of power supply 3735 on bearing assembly 3710.
In certain embodiments, temperature between the transition temperature (as ~ 80-135K) of traditional HTS material and room temperature or ambient temperature (as ~ 294K) of winding in this bearing assembly 3710 or ELR coil or other ELR assemblies or lower than at the temperature of wound coil or winding temperature, provides pole low resistance to electric current.Thus this circuit comprises cooling system 3720, such as, fill in sieve cooler or Stirling cryocooler, for the modification ELR material type that uses by this bearing assembly 3710, for the various assemblies of bearing assembly 3710 are cooled to critical temperature.Such as, this cooling system 3720 can be bearing assembly 3710 can be cooled to other temperature discussed in the temperature of the boiling point being similar to liquid fluorine, the temperature similar to the fusing point of water or this place.In other words, can based on for the type of the modification ELR material in bearing assembly 3710 and/or structure, select this cooling system 3720 by being wherein furnished with the environment of this bearing assembly etc.
Various system, device or other equipment can adopt bearing assembly 3700 or other bearing assemblies and/or assembly described herein.Figure 37 B-K adopts bearing assembly as the block diagram of the system 3760 of bearing assembly 3700.This system 3760 can comprise bearing assembly 3765, such as, comprise electromagnetic stator and have the bearing assembly of rotor of ELR assembly.In addition, in order to control the work of this bearing assembly, this system 3760 also can comprise power amplifier 3770, and it can comprise the various assembly based on ELR, amplifies the signal being received from signal conditioning component 3770, as pi controller (PID).And then in order to provide control feedback loop relative to this bearing assembly 3765, this system 3760 can comprise other circuit elements 3775 various that can receive reference signal 3780 and induced signal 3785.
This system 3760 can be incorporated into, as a part or be used as various device, such as motor or other rotary machines, toy, gyroscope, energy storage system, energy conversion, information storing device, instrument, vehicle and other equipment or the equipment of swivel bearing can be adopted.
The all kinds of present discussion floating bearing assembly and structure.Figure 38-K is the schematic diagram of floating bearing assembly 3800, such as, for the bearing assembly in rotary machine.This bearing assembly 3800 comprises ELR bearing 3810, magnet rotor 3820 and stator 3830.During operation, this bearing 3810 provides and/or produces and rotor is floated the space between bearing 3810 and stator 3830 or the magnetic field in space 3840.
This ELR bearing 3810 can be formed, as revealed extremely low-resistance modification and/or porose ELR material for the ammeter between 150K and 313K or under higher temperature by some or all described from here ELR materials.In certain embodiments, this bearing 3810 can be formed (as shown in the figure) by ELR disk of material, and such as the auxiliary floating rotor 3820 that maintains is positioned at having towards the dish of center slight curvature on bearing 3810.In certain embodiments, this bearing 3810 can be winding or coil, or other can transmit electric current and produce other structures of the ELR element in magnetic field under the low resistance of pole.
This rotor 3820 can be the permanent magnet that can float between this bearing 3810 and stator 3830 and rotate.Such as, this rotor 3820 can be disk, annulus or other annular object.This rotor 3820 can be formed by multiple permanent magnet or electromagnet.In order to the needs of the machine of this bearing assembly 3800 of satisfied use, the magnet of rotor 3820 or multiple magnet can magnetize according to various field structure.In certain embodiments, magnetization can be isotropism, anisotropy and the pattern of multiple pole can be had.Such as, this rotor 3820 can comprise the first magnetic element be coupled with stator 3830, the second magnetic element be coupled with bearing 3810, and by the buffering magnet of the first magnet and the second magnet magnetic isolation.
In order to produce the magnetic field driving rotor 3820, this stator 3830 can comprise the armature (armature) be connected with power supply.Stator comprises location and/or sensory package, such as Hall effect sensory package, optoelectronic switch assembly, radio frequency induction assembly etc.Stator 3830 utilize these assemblies determine about rotor 3820 operate information and make rotor coil correspondingly adjust produced magnetic field.
The bearing assembly 3800 that this place is discussed can adopt other bearing arrangements certainly.Figure 39 A-K is the schematic diagram of bearing 3900, comprises coiling or coil 3920 and substrate 3910 that ELR material such as modification and/or porose ELR material formed.This bearing 3900 transmits electric current by coil 3820 under extremely low-resistance situation, produce can floating magnetic field rotor as the magnetic field of rotor 3820.
Figure 39 B-K is the schematic diagram of bearing 3930, and in order to produce magnetic field, it comprises two or more substrates 3940 of putting together thus forms the modification ELR loop 3950 (or multiple loop) can transmitting electric current.Such as, in four triangle substrates 3942 each comprises ELR material webs, these substrates are adjacent one another are, thus make ELR material 3952 be with formed can under extremely low-resistance situation circulating current loop 3950 and produce can floating magnetic field rotor as the magnetic field of rotor 3820.
Except the dish type bearing assembly shown in Figure 38-K, other bearing assemblies also can adopt ELR material described herein.Figure 40 A-K to 40C-K is the schematic diagram of various bearing component construction.
In Figure 40 A-K, bearing assembly 4000 comprises the rotatable shaft 4020 of the coil 4025 with interval in bearing 4010 space.In some cases, the ELR material that the coil 4025 of rotatable shaft 4020 is described is from here formed.In some cases, bearing 4010 is formed or comprises the coil or loop that from here described ELR material formed by ELR material.The excitation of the coil 4025 of axle 4020 produces magnetic field, and axle is floated relative to bearing 4010.In some cases, in order to asessory shaft 4020 is located relative to bearing 4010, bearing 4010 is formed as various shape.The second magnetic field applied by stator and/or armature (not shown) makes axle rotate when floating.
In Figure 40 B-K, bearing assembly 4030 comprises the rotatable shaft 4050 of the coil 4055 had around bearing 4040 part.Thus this rotatable shaft 4050 can be annular.In some cases, the ELR material that the coil 4055 of rotatable shaft 4050 is described is from here formed.In certain embodiments, bearing 4040 is formed or comprises the coil or loop that from here described ELR material formed by ELR material.The excitation of the coil 4055 of axle 4050 produces magnetic field, and axle is floated relative to bearing 4040.In some cases, in order to asessory shaft 4050 is relative to the location of bearing 4040, bearing 4040 is formed as various shape.Such as, bearing 4040 comprises pedestal 4045, can be positioned on bearing 4040 in center by asessory shaft 4050.The second magnetic field applied by stator and/or armature (not shown) makes bar rotate when floating.
In Figure 40 C-K, bearing assembly 4060 comprises rotating shaft 4080 and comprises the bearing 4070 of the coil 4075 formed by ELR material.The excitation of the coil 4075 of bearing 4070 produces magnetic field, and bar 4080 is floated relative to bearing 4070.In some cases, bearing 4070 can be used as stator, utilizes coil 4075 to provide with the field of locating away from the mode of bearing 4070 or floating lever 4080 makes bar 4080 rotate simultaneously.In some cases, the second magnetic field applied by stator and/or armature (not shown) makes bar rotate when floating.In some cases, in order to auxiliary rod 4080 is relative to the position of bearing 4070, bearing 4070 is formed as various shape.
Certainly, it will be understood by those skilled in the art that other structures are also possible.Such as, the axle (shaft) described in Figure 40 A-K to 40C-K is operable as bearing, and bearing is operable as axle.In addition, bearing and/or axle can comprise multiple ELR element, such as, be used for producing relative to bearing the ELR element floated of axle, the ELR element be used for relative to bearing rotary axle, are used for the position of Control Shaft and/or the ELR element of rotation etc.
As an embodiment, Figure 41-K describes a kind of five terminal axle bearing assembly 4100.This bearing assembly 4100 comprises multiple radiation bearing 4110 and rotatable shaft 4120.In some cases, this radiation bearing 4110 is formed at least part of ELR assembly.In some cases, axle is formed by ELR assembly, magnetic material or other materials.In some cases, monitor the motion of axle and provide the transducer of feedback to be formed by ELR assembly to control structure.This bearing assembly provides five axles of axle to control, the rotation of such as Control Shaft, the transfer of Control Shaft, Control Shaft motion in three dimensions and/or location etc.
As described herein, the bearing of various bearing assembly, rotor and/or stator can comprise and adopt the such as modification of ELR material, the coiling of porose and/or other new E LR materials, coil and/or dish.These coils, winding and/or dish can adopt the band, film, paper tinsel and/or the lead-in wire that are formed by ELR material.
In the formation of ELR line, multiple ELR band or paper tinsel can be superimposed on together thus form extensive line.Such as, coil can comprise supporting construction and one or more supported by supporting construction ELR band or paper tinsel.
Except ELR line, bearing, rotor and/or stator can be formed by ELR nano wire.In conventional cases, nano wire has width or diameter to be positioned at the nanostructure of tens nanometers or less magnitude and not limited length usually.In some cases, ELR material can be formed as having the width of 50 nanometers and/or the nano wire of the degree of depth.In some cases, ELR material can be formed as having the width of 40 nanometers and/or the nano wire of the degree of depth.In some cases, ELR material can be formed as having the width of 30 nanometers and/or the nano wire of the degree of depth.In some cases, ELR material can be formed as having the width of 20 nanometers and/or the nano wire of the degree of depth.In some cases, ELR material can be formed as having the width of 10 nanometers and/or the nano wire of the degree of depth.In some cases, ELR material can be formed as having the width of 5 nanometers and/or the nano wire of the degree of depth.In some cases, ELR material can be formed as having and be less than the width of 5 nanometers and/or the nano wire of the degree of depth.
Except nano wire, ELR band or paper tinsel also can be used for bearing described herein, stators and rotators.Exist for the production of the various technology with the band or paper tinsel that manufacture ELR material.In certain embodiments, this technology be included in coating buffering metal oxide flexible metal band on deposit YBCO or other ELR materials, formed " coated conductor ".During technique, texture introduced by metal tape self, such as by auxiliary roll extrusion, biaxial texture substrate (RABiTS) technique or alternative deposition textured ceramic resilient coating, by means of without the ion beam on textured alloy substrate, such as, by adopting ion beam assisted depositing (IBAD) technique.Additional oxide layer prevents metal from diffusing into ELR material from band.Other technologies can utilize chemical vapour deposition (CVD) CVD technique, physical gas-phase deposition (PVD), atom, and successively molecular beam epitaxy (ALL-MBE) and/or other solution deposition techniques form modification ELR band.
In certain embodiments, the material type that the application type of this film can determine in ELR material is utilized.Such as, some application can utilize the ELR material with BSSCOELR layer, but other applications exploitings have the ELR material of YBCN layer.In other words, except other factors, ELR material described herein can be formed as ad hoc structure (as band or line) and be formed by certain material (as YBCO or BSCCO) based on the type of the bearing assembly or assembly that utilize ELR material.
The various different assembly of bearing assembly that this ELR material described herein can be used as or uses for rotary machine, comprise as bearing coil or be in wherein, as rotor coil or be in wherein, as stator coil or be in wherein, as rotor axle or be in wherein, as band or be in wherein, as ring or be in wherein, as the lead-in wire or other Connection Elements etc. of inter-module.A large amount of rotary machine, comprise motor, generator, alternating current generator and other can utilize this film.
Various types of brushless DC motor or stepping motor can utilize modification ELR film as various assembly or be in wherein, comprise permanent magnet brushless DC motor (PMDC) and swash brushless DC motor (SHWDC) motor, series excitation brush DC (SWDC) motor, compounding (CWDC) motor etc.
Various types of AC motor can utilize modification ELR film as various assembly or be in wherein, comprises single phase induction motor (as phase-splitting induction machine, capacitor start induction machine, permanent magnetism discrete capacitor induction machine, capacitor start/electric capacity drive induction machine, shaded pole AC induction machine etc.) and three-phase induction motor (as squirrel-cage motor, winding rotor motor etc.).
Certainly, one of ordinary skill in the art would recognize that other rotary machines can adopt modification ELR material described herein, comprise general-purpose machine, printing electric motor with armature or minor axis type motor, servomotor, electrostatic motor, torque motor, stepping motor, generator, alternating current generator and other rotary machines.
Various bearing assembly described herein shows by utilizing modification ELR film the operating characteristic improved or strengthen.Such as, this bearing assembly shows the less resistance loss from various conducting element resistance, such as coil, lead-in wire, capacity cell etc., or can be more durable, because particular element is show by the wearing and tearing caused that rub.Learn thus, utilize the equipment with the bearing assembly of the operating characteristic of improvement to benefit from similar improvement successively.Adopt and utilize that the apparatus embodiments of the bearing assembly of modification ELR film comprises fan, turbine, awl, Electricmotor car wheel, locomotive, conveyer belt, robot, vehicle, instrument, engine, manufacturing equipment, toy, gyroscope, based on the motor of MEMS and assembly, and much other use the equipment of rotary machines.
In some embodiments, bearing assembly comprises modification ELR material as described below:
A kind of bearing assembly, comprising: the bearing assembly formed by modification ELR material at least partly; Formed by magnetic material and the rotor of contiguous bearing setting; Wherein when by current induced magnetic field in the modification ELR material of bearing, this rotor is relative to bearing floating.
Manufacture a method for bearing assembly, the method comprises: the bearing forming modification ELR material; And rotor placed by the contiguous bearing formed, thus in response to the magnetic field that the electric current of the modification ELR material by bearing produces, this rotor can relative to bearing floating.
A kind of bearing assembly, comprising: show to the electric charge transmitted the bearing that extremely low-resistance ELR material formed at higher than the temperature of 150K.
For the bearing in bearing assembly, comprising: substrate; And the coil formed by modification ELR material at least partly.
Manufacture a method for bearing, the method comprises: place substrate; And with the deposition modified ELR material of annular on placed substrate.
For the bearing in floating bearing assembly, comprising: substrate; And the coil that extremely low-resistance ELR material formed is shown to the electric charge transmitted at higher than the temperature of 150K.
A kind of bearing assembly, comprising: the bearing formed by modification ELR material at least partly; Cooling system, is set to the temperature of bearing to maintain between 150K and 313K; And the rotor to be formed by magnetic material and this bearing contiguous are placed; Wherein when current induced magnetic field in the modification ELR material flowing through bearing, this rotor floats above bearing.
Manufacture a method for bearing assembly, the method comprises: the bearing forming modification ELR material; Be coupled with cooling system structure by formed bearing, cooling system is set to the temperature of bearing to maintain between 150K and 313K; And rotor placed by the contiguous bearing formed, thus in response to the magnetic field that the electric current of the modification ELR material by bearing produces, this rotor can relative to bearing floating.
A kind of bearing assembly, comprising: the bearing at the temperature between 150K and 313K, the electric charge transmitted being shown to the formation of extremely low-resistance ELR material; And cooling package, the temperature of the ELR material of bearing is maintained between 150K and 313K.
A kind of rotary machine, comprising: the bearing formed by modification ELR material at least partly; Formed by magnetic material and the rotatable shaft of contiguous this bearing placement; Wherein when current induced magnetic field in the modification ELR material flowing through bearing, this rotatable shaft and bearing spacer certain distance.
A kind of motor, comprising: bearing assembly, shows extremely low-resistance ELR material form this bearing assembly at the temperature wherein between 150K and 313K to the electric charge transmitted; And power supply module, wherein this power supply module is set to provide electric power to this bearing assembly, thus in the ELR material of bearing assembly generation current.
A kind of rotary machine, comprising: be set to the bearing producing magnetic field; Be set to rotate and the rotor of contiguous this bearing location of length based on magnetic field; Wherein this bearing or rotor show extremely low-resistance material to electric charge under being included in ambient temperature and normal pressure.
The transducer that Chapter 11-ELR material is formed
The description of this chapter relates to Fig. 1-36 and Figure 37-L to Figure 88-L; Therefore the whole reference numbers comprised in the portion relate to appearance element in the drawings.
Describe the transducer comprising the assembly formed by modification, porose and/or other polar low resistance (ELR) materials.In certain embodiments, this transducer comprises the assembly utilizing ELR material nano line.In certain embodiments, this transducer comprises the assembly utilizing band or the paper tinsel formed by ELR material.In certain embodiments, except other advantages, this transducer comprises the assembly utilizing film ELR material to be formed.To higher than the electric current at the normal temperature relevant to electric current high-temperature superconductor HTS, this ELR material provides pole low resistance, improves transducer operating characteristic at these higher temperatures.
Present detailed description modification, porose and/or other new E LR material uses in the sensor.Usually, adopt the various sensor constructions of ELR material to be possible and depend on the type of designed transducer.The various principles of domination traditional sensors design can be applicable to the transducer of employing ELR material described herein.Thus, although illustrate and describe some sensor shapes and structure herein, but other various shapes and structure are also possible.In addition, although various embodiment described herein has paid close attention to specific sensing system how to use the transducer or sensor cluster that are formed by this ELR material, these embodiments have been only that descriptive and non-limit is in this.The those skilled in the art providing the various embodiments in the disclosure can identify other assemblies that can be formed by this ELR material in identical or similar sensing system.
Figure 37-L describes that transducer 3700 has by modification, porose and/or other new E LR materials are formed or at least partly in conjunction with the block diagram of the assembly of this material.As a rule, transducer receives excitation (measured) S 1and the electronic output signal S of the parameter of Token Holder excitation, characteristic or condition out.Non-limiting example and its relevant parameter, characteristic or the condition of excitation is described in Table A below.
Table A: the non-limiting example of excitation
Transducer 3700 comprises one or more optional transducer 3705, photostat 3710 and post-processing module 3715.First signal with first kind energy is converted to the secondary signal with Second Type energy by each optional transducer.Such as, mechanical excitation signal S1 can be converted to optical signalling S by the first transducer 3705a 2, provide it to the second transducer 3705b subsequently, it is by optical signalling S 2be converted to thermal signal S 3etc., to manufacture M signal S n+1.This direct converter 3705 also can be transducer, but specifically changes input signal or change into the transducer of the signal of telecommunication.This photostat 3710 receives the M signal S from one or more transducer 3705 n+1and be converted into signal of telecommunication S e.In some transducers, without the need to transducer 3705 and this photostat 3710 directly receives the S of pumping signal or measurement 1.In order to produce one or more output signal S of quantity, characteristic or situation that representative encourages out, change by post-processing module 3715 this electronic signal that (such as digitlization, amplification etc.) produce.Inter alia, this post-processing module 3715 can comprise and inputs or outputs terminal, conductive path, various analog-and digital-reprocessing electronic equipment such as data processor, digital signal processor, application-specific integrated circuit (ASIC), amplifier, filter, analog to digital converter, convert of capacitor to voltage device, difference channel, bridge circuit etc.
Table B shows the example of the exhaustive of the translation type that can be performed by transducer 3705 and/or photostat 3710
Table B: the exhaustive embodiment of power conversion type
In certain embodiments, transducer 3700 can produce the non-electronic output signal S that can be read as quantity, characteristic or the situation representing excitation by people or equipment out.Such as, this transducer can produce the optical output signal representing motion.In certain embodiments, in order to produce non-electronic output signal, post-processing module 3715 is to the intermediate telecommunication S from photostat 3710 eperform reprocessing.In certain embodiments, photostat 3710 and/or post-processing module 3715 (such as, if transducer 3705 produces the optical signalling can understood by people) can be ignored.
Transducer 3700 can comprise other assemblies not shown in Figure 37-L, comprises interface circuit.Such as, if transducer 3700 is active sensor, then this transducer can comprise energizing circuit or other excitaton sources (as optical excitation source).As another embodiment, signal pre-treatment or post processing circuitry can executive signal process before or after signal is converted its any one conversion in 3710 of device 3705 and direct pick-up.The embodiment that can be included in other assemblies in transducer 3700 comprises processor, digital signal processor, application-specific integrated circuit (ASIC), amplifier, filter, optical pressure transducer, energizing circuit is (as current feedback circuit, magnetic field sources is (as induction coil or coiling, comprise helix tube, solenoid etc.), Voltage Reference, driver and optical drive), analog to digital converter, waveguide, oscillator, convert of capacitor to voltage device, radioactivity circuit, difference channel, bridge circuit, data transfer components, ground plane/loop, antenna, shunt capacitance, the assembly of shielding noise source is (as electronics, magnetic, machinery and Sai Beike noise) and power supply as battery.
As a rule, transducer 3700 can comprise the various ELR assemblies formed by modification, porose and/or other new E LR materials in whole or in part.ELR assembly can be set to such as conduction current, by signal conversion or be transformed to electromagnetic signal or by electromagnetic signal change (comprising curtage) or otherwise transmission or change electromagnetic signal.Such as, one or more converter 3705, photostat 3710, post-processing module 3715 or other before or after process electronic equipment can further by ELR band and/or ELR film formed ELR nano wire, ELR band or ELR paper tinsel formed ELR assembly.Below enumerate the non-limiting example providing the assembly that can adopt in the transducer 3700 of ELR material.
Conductor (such as, electrode, contact, wire, conductive trace/integrated circuit interconnection etc.)
Inductor, comprise except other outside, can be formed as solenoid, annular, the induction coil of other 3D shapes or winding, printing is on circuit boards and/or be used as magnetic field sources.
Capacity cell (such as, parallel plate capacitor, cylindrical capacitor, plate condenser etc.),
Antenna.
Various transducer and/or sensor setting can adopt the ELR assembly formed by ELR material, such as those ELR assemblies above-named, as conduction current, by signal conversion or be transformed to electromagnetic signal or change (comprising curtage) or otherwise transmission or change the ELR assembly of electromagnetic signal by electromagnetic signal.The those skilled in the art providing the various embodiments of ELR material, sensor-based system and the sensing principle in the disclosure can perform other transducers with one or more ELR assembly, without the need to too much experiment.
In addition, although embodiment described herein has paid close attention to specific sensor-based system how to utilize specific ELR assembly, but these embodiments are descriptive and are not limited thereto.The those skilled in the art providing the various embodiments in the disclosure can identify other assemblies that can be formed by this ELR material in identical or similar sensing system.
In addition, it will be understood by those skilled in the art that this present inventor anticipates that ELR material can be used in the complicated sensor-based system of the combination comprising two or more discrete sensor-based system described herein and principle, even if these combinations clearly do not describe.
In addition, although these apply the particular measurement or sign (as measuring resistance, electric capacity, inductance, voltage, electric current, impedance, electromagnetic field intensity etc.) that provide the example of circuit, transducer and other assemblies to can be used for execution value, this embodiment is descriptive and is not limited thereto.These various distortion measured or characterize are apparent for those skilled in the art.In addition, although various transducer can be described as " detection ", " mensuration " or " calculating " specific unknown parameter (as unknown resistance), but unless expressly stated, this does not represent the necessary amount directly mentioned by calculating of transducer.On the contrary, those skilled in the art will recognize that and directly or indirectly determine this amount by transducer.In order to describe, if transducer is described to " resistance of measuring component A ", then this comprises the time constant determining the rlc circuit comprising element A, due to this time constant can directly affect by unknown resistance value.
In addition, although various assembly such as capacity cell or plate, " metal ", " conduction " or " conductor " can be described as herein, but those skilled in the art will recognize that in certain embodiments, when not departing from this scope of the invention, capacity cell or alternative being formed by semi-conducting material of plate.
In the drawings, various described element or the size of assembly and the thickness of lateral dimension and each layer need not be shown to scale and can zoom in or out arbitrarily these various elements for the ease of understanding.Further, when details is not if desired for this detailed description of the present invention, the details of assembly is briefly described in the drawings, instead of the details accurately connected as the precise geometry of assembly or the determination of position and this inter-module.When this details is not if desired for understanding the present invention, shown representational structure, interconnection and setting are considered as the description to design or operation principle usually, and are not limited thereto.
Some or all systems described herein and equipment can adopt low cost cooling system in the application, wherein this specific ELR material of adopting by this application at lower than the temperature of surrounding environment, show pole low resistance.As discussed here, this application can comprise cooling system (not shown), and ELR inductor is cooled to other temperature that the temperature of the boiling point being similar to liquid fluorine, the temperature being similar to the fusing point of water or this place are discussed by such as system.Can based on for the type of the ELR material in this application and this cooling system of structure choice.
In sensor-based system, utilize ELR material can cause multiple advantage.Such as, utilize ELR material instead of HTS material can eliminate or reduce the complexity of the cooling system needed for working sensor in the sensor, its size, weight and execution and operating cost can be reduced.Further, ELR material (non-cryogenic) at the temperature higher than HTS material can show stronger and trickleer temperature and light sensitiveness, can provide the thermoelectricity of improvement, photoelectricity and other sensing characteristicses at relatively high temperatures.And ELR material can show for the stronger sensitiveness of electromagnetic input signal and/or detect lower electric current and/or lower voltage.In addition, ELR material can transmit electromagnetic signal (as input, middle or output current or voltage) when less resistance loss more at a distance than conventional conductor, less noise or less needs can be caused for the amplification of these signals, and/or more low current level between permission sensory package or greater distance.As a rule, there is the conventional conductive of the replacement of ELR material and circuit element such as copper conductor and traditional electric capacity and inductance and can reduce resistance loss, the operating efficiency of transducer can be improved, reduce wasted heat and/or improve other characteristics of its operation, such as stability, precision, response speed, working life, fund or operating cost, size, weight, characteristic size, sensor density, sensitiveness, selectivity, hysteresis, linear, saturation, repeatability, resolution, output impedance and reliability.Such as, in transducer (as filter, oscillator, resonator, inductance, electric capacity, amplifier etc.) various assembly, utilize ELR material that these assemblies can be allowed more perfectly to operate (as having higher Q factor, higher gain, lower noise etc.).The better performance realized by these assemblies improves the overall performance of transducer conversely.
Before the details explaining various sensing system, some background applications of sensing system 3700 are described.Figure 87-L shows and adopts the equipment of sensing system 3700 or an embodiment of system 8700.This system 8700 via one or more port, interface and/or I/O assembly 8715 as antenna, hard-wire data interface (as high-speed serial bus, contact feet) and user's interface unit (as display, loud speaker, keyboard etc.) receive or transmission signal.Except logic and control circuit 8705 and/or simulation or RF circuit, memory 8710, and power supply 8720, this system also comprises sensing system 3700, and all these are placed on housing, encapsulation or are integrated into a unit in addition.In other embodiments, one or more system 8700 (such as distribution sensor system) can control in whole or in part by away from one or more logic of system 8700 and control assembly 8705.
This system 8700 can take the one in various ways.In one embodiment, this system is mobile phone, smart mobile phone, kneetop computer, panel computer or other hand-held electronic equipments.In this embodiment, power supply supply 8720 can be battery and this sensing system 3700 can comprise among other things microphone (as detecting voice and other sound), accelerometer (as detect mobile, accelerate or the orientation of equipment), sense of touch input pickup (as touch panel sensor and load button), light and/or imageing sensor (as obtaining picture or video), all these or any one can be formed on one or more semiconductor chip.This logic and control circuit 8705 can comprise processor, and interface and I/O assembly 8715 can comprise antenna, USB port, keyboard or keypad, indication equipment, display device, loud speaker or other well known elements simultaneously.Other known tip assemblies multiple in this embodiment of hand-hold electronic equipments are also possible certainly, but it will be apparent to those skilled in the art that due to it, therefore not shown.
I. position, displacement and horizon sensor
In certain embodiments, transducer 3700 can be arranged to provide instruction close to the physical target of this transducer or the output signal of fluid level position or movement.Instruction " position " means relative to specific angle with reference to indicating target or linear coordinate, and indicates " displacement " to mean movement from reference position indicating target.
I.A is based on the horizon sensor of resistance
Figure 38 A-L shows the schematic diagram of an embodiment of transducer 3800, transducer 3800 be set to produce represent low temperature (as liquid nitrogen, liquid helium etc.) or be stored in there is degree of depth D refrigerator (or other appropriate containers) 3825 in the output signal of level of cryogenic liquid 3830 (as liquid fluorine Leon etc.).This transducer 3800 comprises the length of ELR material 3805, can be arranged on supporting construction 3810 or among, the length keeping ELR material substantially with the main axis parallel of refrigerator.This ELR material can be formed as ELR nano wire, ELR band, ELR film and ELR paper tinsel or other structures.A part for the length of ELR material is submerged, thus makes its directly contact cryogenic liquid 3830 or close with it.This transducer 3800 can comprise the one or more curtage sources 3815 being set to transmit current known or voltage input signal in the length of ELR material.This transducer 3800 can comprise further and to be set to heat to spill in ELR material thus to promote the heater 3840 of temperature higher than the temperature of cryogenic liquid 3830 of ELR material expose portion.This transducer 3800 can also be included in one or more electric currents, voltage or the impedometer 3820 (such as by switch or other Coupling devices) be coupled along the one or more known position of the length of ELR material and the length of ELR material.
As mentioned above, the resistivity of ELR material highly can depend on temperature.Thus, the composition of the length of ELR material can be selected, thus when it immerses cryogenic liquid 3830 (as immersed lower than the horizontal plane D shown by Figure 38 A-L), show the first low resistivity (R1) and (and in certain embodiments, when being heated by heater 3840) shows the second higher electric resistivity (R2) when it does not immerse cryogenic liquid.Thus, the overall electrical resistance of ELR length of material by the horizontal plane D with the cryogenic liquid in refrigerator inversely.Inverse relation between level and resistance can be determined (as passed through calibration procedure) by theoretical or experiment.In addition, any length along ELR material the measured resistivity of given arbitrfary point this expression on or below the horizontal D of cryogenic liquid is provided.
Therefore the level of the following method determination cryogenic liquid 3830 that partly or entirely can be performed by computer-readable instruction is passed through.Input current or voltage signal can be applied to the length of ELR material; In addition, heat the length of ELR material thus promote the temperature of its expose portion.Directly by utilizing impedometer or indirectly by the resistance utilizing voltage or amperometric measurement result voltage or electric current to determine a part for ELR length of material.Utilize the resistance recorded and the inverse relation determined between liquid level and resistance, the horizontal D of cryogenic liquid can be determined.In certain embodiments, can measure the approximate resistivity in response to input signal along one or more known points of ELR length of material, and measured resistivity can be used for determining which part of ELR material is dipped into and thus determines the present level D of cryogenic liquid.
Above-mentioned sensing principle and method can with have be set directly at known temperature liquid in or to arrange with other of its close ELR material and be combined.Such as, although illustrated the single long length of ELR material 3805 in Figure 38 A-L, but as shown in Figure 38 B-L, ELR material multiple lengths along the direction of refrigerator main shaft combines continuously by additional ELR material or electric conducting material, so as on supporting construction or among form longer roundabout or bending length 3850.
I.B electromotive force position and horizon sensor
Figure 39 A-L shows the schematic diagram of an example of potentiometric sensor 3900, has the assembly formed by ELR material, and is arranged to produce the displacement (d) of indicating target or the output signal Vout of position.Transducer 3900 comprises a variable voltage divider or potentiometer 3905, such as linear or rotating potentiometer, and it comprises ELR nano wire, and ELR is with, ELR film, ELR paper tinsel, or other structures of above-mentioned ELR material.Such as, the vernier of potentiometer and/or resistive element can be formed by ELR material.The target of the measured (not shown) in its position is mechanically coupled to vernier 3910.The position of target can by being applied across the input voltage source 3915 (Vin) of two ends of potentiometer 3905 and the output voltage (Vout) measuring vernier 3910 place is determined.In linear potentiometric situation, the vernier voltage recorded can be known roughly proportional with the displacement of object.For the potentiometer of other types, the vernier voltage recorded and input voltage can have (such as, logarithm or the exponential relationship) of another kind of known relation
Figure 39 B-L represents the schematic diagram of an embodiment of the potentiometric sensor 3950 with the ELR assembly formed by ELR material, and it is configured to produce and represents the level of liquid 3975 in a container 3980 or the output signal of degree of depth D.Element shown in Figure 39 B-L is similar to shown in Figure 39 A-L.By the vernier 3910 of float 3965 with the potentiometer 3905 formed by ELR material is at least partly coupled, those can be used to be similar to horizontal D that above-mentioned principle and method carry out tracer liquid.
Figure 40-L shows the cross section of the embodiment of another potentiometric sensor 4000 with the ELR assembly formed by ELR material, and it is configured to produce the output signal (Vout) representing target location.Transducer 4000 comprises and has the first flexible or can pressing tablet 4005 of conductive surface 4020, as contact zones, and scribbles the second rigid surface of resistance material 4010.Conductive surface 4020 and/or resistance material 4010 can by ELR nano wires, and ELR is with, ELR film, ELR paper tinsel, or other structures of ELR material are formed.Two panels by separator 4040 physics separately.One of sheet material ground connection (or otherwise remaining a known voltage) and another sheet and known input impedance Rin and voltage source 4025Vin can be contacted and place.When target 4030, as finger, when the end distance with transducer presses flexible sheets for d place, described conductive surface 4020 contact resistance material 4010, and change in a known way across the output voltage Vout at two sheet materials, such as, in roughly proportional with the distance d of target apart from transducer tip mode.Therefore, by measuring the output voltage (Vout) striden across on two sheet materials, the position of target 4030 can be determined.Such potential position transducer can be used in numerous applications, comprise such as, voice-operated device and the control in the consumption and commercial electronic products of other type.That yes is possible in other application many.
Although illustrated several embodiments of potentiometric sensor 40-L in Figure 38-L, shown embodiment and not intended to be exhaustive and provide its for illustration of object.As should be appreciated, other potentiometric sensors can be designed to include ELR assembly.Such as, by using any potentiometric sensor changing resistance measurement position or other stimulations can comprise the resistance formed by ELR material, conductor or other ELR assemblies.Such as, the vernier of reference and potentiometer are only examples to this transducer: use the transducer of this ELR material can adopt any variable voltage divider, variable impedance element or other structure, thus provide known can power transformation exporting based on given input displacement or position.
I.C. capacitance displacement sensor
In certain embodiments, transducer 3700 comprises a capacitance displacement sensor, and it comprises at least partly by ELR nano wire, and ELR is with, ELR film, ELR paper tinsel, or the capacitor board that formed of other structure of ELR material or structure.As non-exhaustive embodiments, the capacitance displacement sensor with one or more capacitor board of being formed by ELR material or structure can be (1) one pole transducer, it uses the single capacitor formed by two capacitor boards or structure (as Figure 42-L, shown in 44-L and 45-L), (2) use the differential sensor of two electric capacity being formed (as shown in Figure 41-L) by three or more capacitor board or structure, or (3) use the capacitance bridge transducer (as shown in Figure 43-L) with multiple capacitor board of bridge deployment arrangements or structure.
Figure 41-L describes the general operation principle of capacitance displacement sensor.As shown in the figure, capacitive displacement transducer 4100 have employed relative to fixed capacity plate or structure 4105a and 4105b with the removable capacitor board of distance, delta displacement or structure 4110.As the result of the slab geomitry shape changed, electric capacity C1 and C2 existed between movable panel 4110 and fixed capacity plate 4105a and 4105b changes in theory and/or tests the known quantity determined.The electric capacity of change changes the output voltage (Vout) observed in response to input source 4150.By this way, by monitoring output voltage (Vout), the displacement (Δ) being mechanically coupled to the object of described mobile capacitor board or structure 4110 can be determined.
At Figure 42-L, the transducer shown in 43-L and 45-L is with similar principles work.Such as, the two plate one pole transducers 4200 shown in Figure 42 A-L have the fixed reference plate 4205 separated with moveable sensory panel 4210 by dielectric (such as air); Distance d between two plates depends on the motion of removable tablet.Electric capacity C1 between two plates changes with distance d.As shown in Figure 42 B-L and 42C-L, MEMS technology can be used realize two plate one pole transducers.Such as, removable sensing plate 4210 can by micro Process, to make it be elastically suspended 4220 supportings, allows it to move relative to the micro Process datum plate 4205 with rigid suspended 4225.In the capacitance type sensor 4300 shown in Figure 43-L, two movable panel 4310a and 4310b can both move relative to 4 the fixed head 4305a-d being arranged as bridge construction.In the capacitance type sensor 4500 shown in the cutaway view of Figure 45-L, the center conductor 4510 of cylindrical capacitor can be moveable capacitive element.Its degree of depth (d) being inserted into fixing external capacitive structure 4505 affects the electric capacity between conductor 4510 and external structure 4505.Although describe cylindric capacitor, but transverse shifting capacitor board may be used in other embodiments.Certainly, in order to produce the available electron signal representing displacement or change electric capacity, shown various capacitive displacement transducers also can utilize additional interface electronic building brick (such as, inverter 4155 and amplifier/synchronizing indicator 4355)
Figure 44-L shows the schematic diagram of an embodiment of capacitive position transducer 4400, and tool is formed by ELR material and is configured to the output signal of the position of the conductive object producing instruction.As Figure 44-L, when its distance or the measured target 4410 of displacement are also conductions, capacitance type sensor 4400 can be have at least partly by ELR nano wire, ELR tape, ELR film, ELR paper tinsel, or other structures of ELR material are formed and are configured to be capacitively coupled to the single capacitor board of conductive object 4410 or the capacitance probe of element 4405.Capacitor board or element 4405 can be coupled to center conductor and/or other electronic equipments of the cable 4355 being configured to measure described capacitor board or the electric capacity between element 4405 and conductive object 4410.Coupling capacitance can be depending on capacitor board or the distance (a) between element 4405 and conductive object 4410.Therefore, transducer 4400 produces output voltage relevant to the distance between probe and described target in a known way.In some instances, transducer 4400 also can be used to detect non-conducting objects.
The example structure of the capacitance displacement sensor shown in Figure 41-L to 45-L is not limit, and the various structures of the capacitor board exported in response to the electricity showing change of the displacement of one or more capacitor board or element or element can be used.Such as, be previously described to movable plate or element can be fixed, vice versa.As another embodiment, other capacity cells instead of plate with geometry and cylindrical can be used.As another embodiment, capacitive displacement transducer can comprise shielding element and/or guard ring, and can comprise the dielectric of one or more separation, as liquid, and elastomer, or other deformability/non-rigid medium.In any structure, one or more capacitor board or element (or other element of transducer) can completely or partially be formed by ELR material.
Capacitive displacement transducer, it comprises the assembly formed by ELR material, can be used for many application, comprise accurate location (such as semiconductor machining and detection), disc driver, machine tool metering, streamline is tested, accurate thickness measure, and the sensor-based system of complexity, wherein power, pressure or temperature cause displacement, and other application that can recognize.
ID. inductance type transducer, comprises variable inductance displacement transducer
In certain embodiments, transducer 3700 comprises variable inductance displacement transducer, and it comprises the one or more coils (or other sensing element) formed by ELR material (such as, ELR coil) at least in part.Figure 46 A-L represents the circuit diagram having and to be formed by ELR material and be configured to an embodiment of the linear variable differential transformation transducer 4600 of the ELR assembly producing the output signal representing target location.Figure 46 B-L shows the cutaway view of transducer 4600, simplification circuit symbol corresponding with it.Linear variable differential transformation transducer 4600 comprises primary coil 4605, connect with opposite phase and be positioned at two secondary coils 4610,4615 of described primary coil both sides, and the ferromagnetic core core 4620 (such as, insert the cylinder open between coil coaxially and lead along same axostylus axostyle 4630) be inserted between primary coil and secondary coil.Although not shown, coil can be arranged in and stop them directly to contact in the backing material of core.One or more elementary and/or secondary winding can by ELR nano wire, and ELR is with, ELR film, ELR paper tinsel, or other structures of ELR material are formed.Primary coil 4605 is driven by reference voltage signal (Vref) and measures the differential output voltage (Vout) across two secondary coils.Ferromagnetic core 4620 from it and the displacement in centre position that two secondary coils are equidistant change the impedance in the path between primary coil and secondary coil, thus change the coupling between primary coil and secondary coil.Therefore, output voltage (Vout) can be monitored, thus determine the displacement of ferromagnetic core and be mechanically coupled to the displacement of target of ferromagnetic core thus.
At other embodiment (not shown), this transducer 3700 alternately comprises rotatory variable differential transformer, it ferromagnetic core comprising rotation and the one or more coils be made up of ELR material.In order to measured angular displacement, this transducer can the principle similar with linear variable-differential transformer transducer 4600 operate.
In other examples of inductance type transducer (not shown), the measured target mechanical couplings of one or more coil and its position.In this embodiment, the mechanical displacement of target causes one or more coil relative to the displacement of other coil, thus changes the degree of coupling between each coil.Therefore, one or more secondary winding output voltage is striden across to determine displacement of targets by measuring.In certain embodiments, one or more coil is provided and moving target or core produce measured output from coil.
Certainly, these embodiments are not limits, and as recognized, the various structures of variable inductance or other inductance sensor also can utilize ELR material in coil or other assembly.
Variable inductance displacement transducer can use in numerous applications, and it comprises the ELR assembly formed by ELR material, applies the automatic measurement on the position feedback that comprises in servomechanism, gauge head and lathe, and other application that will be appreciated that.
I.E. vortex flow position transducer
Figure 47-L shows the assembly that has and formed by ELR material and is configured to the schematic cross-section of an embodiment of the eddy current sensor 4700 producing the output signal representing target location.Transducer 4700 comprises a reference coil 4710 and induction coil 4715, and both reel around FERRITE CORE 4720.One or more coil can by ELR nano wire, and ELR is with, ELR film, ELR paper tinsel, or other formation of structures of ELR material.Although not shown, this transducer 4700 can also comprise metal skirt or other guard shield, electromagnetic field is drawn the front of orientation sensor.Eddy current sensor 4700 can be used to the distance d between measuring transducer and conductive object 4705.The vortex flow in conductive object responded to by transducer 4700, and it produces the magnetic field relative with sensor coil, and thus changes its magnetoimpedance.The magnetoimpedance changed depends on distance d, such as, is measured the magnetoimpedance of change by the imbalance detected between induction coil and reference coil.In some instances, reference coil can be omitted and change magnetoimpedance can be determined, such as, by measuring the absolute magnetoimpedance of described sensor coil or the change by determining electric current needed for maintenance stationary magnetic field.
Although Figure 47-L shows an embodiment of the two coil configuration of eddy current sensor, the object of shown embodiment is only explanation; The various appropriate structuring of core (comprise ferromagnetism, ferrimagnetism and non-ferrite magnetic core, such as air or dielectric core) and coil/winding (comprise solenoid, loop coil, arrange with other) can eddy current sensor be used as, comprise the coil be made up of ELR material or winding.In addition, do not consider use operation or measurement pattern, various current vortex sensor also can use ELR coil.Such as, the design of a single coil eddy current sensor, by determining to keep the gallon target required for constant magnetic field, it also can comprise the coil formed by ELR material.
The vortex current sensor with ELR material can be used for various application, comprises as position transducer, simultaneously the thickness of sensing or measurement non-conductive coating layer, the thickness of material, conductivity, plating, crack and blemish, and other application, as recognized.
I.F. transvercal induction position transducer
Figure 48-L shows the assembly that has and formed by ELR material and is configured to the schematic diagram of an embodiment of the transvercal induction formula proximity transducer 4800 of the output signal producing the position representing ferromagnetic object 4805.Figure 49-L shows the schematic cross-section of an example of transvercal induction formula proximity transducer 4800, and it has the assembly that formed by ELR material and is configured to produce the output signal representing target location.Transducer 4800 comprises the coil 4810 being wound around core 4815, such as FERRITE CORE.Coil can by ELR nano wire, and ELR is with, ELR film, ELR paper tinsel, or other formation of structures of ELR material.When transducer is brought near ferromagnet 4805, change the inductance of this coil in the mode depending on distance d.The inductance changed can be detected by inductance measuring meter 4820.Therefore the distance d between ferromagnet 4805 and transducer 4800 can be changed by inductance measuring and determines.As Figure 49-L, by non-ferromagnetic 4930 being coupled to ferromagnet as ferromagnetic disk 4935, use above-mentioned identical method, transducer 4800 can be used for the distance d indirectly determining non-ferromagnetic object 4930.
Although Figure 48-L and 49-L shows two embodiments of the structure of transvercal induction formula proximity transducer, but shown embodiment only for illustration of object, and as recognized, the core of other suitable constructions various (comprises ferromagnetism, ferrimagnetism and non-ferrite magnetic core are as air or dielectric core) and/or coil/winding (comprise electromagnetically operated valve, annular, and other structures) be also possible.Various transverse electric Sensor can comprise the coil or winding be made up of ELR material.In addition, various transverse electric Sensor can utilize ELR coil, no matter the precision of its operation and measurement pattern.
I.G. Hall-effect position sensors
Figure 50-L shows the schematic diagram of operation principle that hall effect sensor 5000 is described, it has the ELR assembly that formed by ELR material and be configured to produce and represents the magnetic field of target and/or the output signal of position.As shown in the figure, in response to the input current I (such as, DC electric current) that two terminals through bus 5005 apply, two other terminal that magnetic field (B) strides across conductor produces horizontal Hull voltage (V h).Output signal V h(that is, its symbol and amplitude) depends on the amplitude in magnetic field (B) and the electric current (I) of direction and applying.This conducting strip 5005 can by ELR nano wire, ELR tape, ELR film, ELR paper tinsel, or other formation of structures of ELR material.Although not shown, hall effect sensor 5000 can be implemented, by transducer and interface circuit such as amplifier or threshold electronic equipment (as a Schmidt trigger) being combined with simulation or twin-stage form respectively.
The output signal of hall effect sensor 5000 (or referred to as " Hall element ") can be used to directly measure magnetic field.In order to detection position, hall effect sensor 5000 can also combine with a magnetic field sources, as permanent magnet or other magnetic field sources (as solenoid or annular).In some examples of hall effect sensor, permanent magnet or other magnetic field sources target measured with its position are coupled.In these examples, the magnetic field detected by Hall element represents the position of the target relative to Hall element, this is because the magnetic field arriving bus can change relative to the position on described bus according to target.Figure 51-L shows an example of the Hall-effect position sensors of this general class.As shown in the figure, magnet 5105 or other magnetic field sources are placed among floating target 5110 or on it, thus the Hall element 5120 that float is fixed relative to the top being positioned at bar (pole) moves up and down along bar 5125.
As in another embodiment shown in by Figure 52 A-L and 52B-L, hall effect sensor can comprise a magnetic field sources 5210 (such as permanent magnet), and it is interrupted by moving ferromagnetic object (such as plate or blade 5215).As shown in Figure 52 A-L, when blade 5215 is located at the primary importance producing air gap 5205 between transducer and magnet, the flux from magnetic field sources strides across gap and arrives Hall element 5000.As shown in Figure 52 B-L, when blade 5215 is positioned at the second place of Space-Occupying 5205, blade shunting flux away, makes it can not arrive Hall element 5000.In these examples, therefore the magnetic field detected by Hall element can indicate position or the displacement of the object being connected to described blade.Blade can have linear or rotary motion.Such transducer can be used for automobile distributor controlled (automobiledistributor), although other application many are also possible certainly.
Other transducer various utilizes the magnetoelectricity transmission mechanism of Hall element 5000.Such as, transducer can adopt multiple (such as, 4) to be configured to electric bridge or other network equipment and the Hall element driven by permanent magnet (or other magnetic field sources), thus measure linear or angle 3D position or motion.As another example, by detecting the magnetic field produced by electric current, Hall element can measure the electric current that conductor passes through.As another example, Hall element may be used for monitoring makes transducer close to metal structure, the disturbance to magnetic field that the object of the disturbing magnetic field of ferromagnetic or Ferrimagnetic structure or other types causes.
Although Figure 50-L to 52-L shows the different example of hall effect sensor, but illustrated embodiment is only illustrative purposes.Other suitable structure various of hall effect sensor and/or other assembly (comprising permanent magnet, electromagnet, annular, and its pond magnetic field sources) or geometry stimulate for the position or other types characterizing object, and it combines ELR material.Such as, various structure can utilize hall effect sensor, and it comprises by ELR nano wire, and ELR is with, ELR film, ELR paper tinsel, or the conductive strips 5005 that other structures of ELR material are formed.As another example, various structure can utilize by ELR nano wire, and ELR is with, ELR film, ELR paper tinsel, or the magnetic field sources (such as, electromagnetism or annular) that other structures of ELR material create.
Hall effect sensor can be used for many application, includes but not limited to: and speed probe (for anti-lock braking system, metrograph, disc driver, electronic ignition system, tachometer, timing wheel, axle and gear teeth), electronic compass, Electric Machine Control, location/motion sensor/switch, automotive ignition and fuel spray, liquid flow sensor, Magnetic Sensor, current sensor and pressure sensor.Hall effect sensor can be included in, such as, automobile, smart phone, printer, keyboard, industrial machine, and some global positioning systems unify can recognize other application in.
I.H. reluctance position sensor
Various magnetoresistive transducer utilizes the anisotropic magnetoresistance characteristic of conducting element.Magnetoresistive transducer may be used for, in many structures identical with Hall element and application, comprising for close, position or rotation detector.By the resistance of monitoring magnetic resistance conducting element, magnetoresistive transducer detects the change (as by permanent magnet or other magnetic field sources, as the field that electromagnetically operated valve or magnet ring produce) in magnetic field, and it changes in response to the magnetic field changed.The various configurations of magnetoresistive transducer can use ELR assembly, and as ELR nano wire, ELR is with, ELR film, ELR paper tinsel, or other structures of ELR material.Such as magnetoresistive transducer can adopt by ELR film, the magnetic resistance conducting element of ELR paper tinsel or other formation of structure.As another example, magnetoresistive transducer can adopt by ELR nano wire, and ELR is with, ELR film, and/or the magnetic field sources that ELR paper tinsel is formed (as solenoid, annular or other inductance coils)
I.I. magnetostriction position transducer
Various magneto strictive sensor utilizes the structure formed by magnetostrictive material, thus converts magnetic energy to kinetic energy, or vice versa.An embodiment of magnetostriction position transducer uses ultrasonic wave to detect can along the permanent magnet of the length movement of waveguide (or other magnetic field sources) position.Such system can use one or more waveguide, magnetic field sources, piezoelectric transducer and/or magnetoresistive transducer.The various configurations of magnetoresistive transducer can comprise waveguide, magnetic field sources, magnetoresistive transducer, or by ELR nano wire, ELR is with, ELR film, and/or other ELR assembly that ELR paper tinsel is formed.The application of magnetostriction position transducer comprises hydraulic cylinder, injection mould machine, casting, elevator, mine, rolling mill, printing machine, and other that will be appreciated that need equipment and the application of long Distance function.
I.J. radar site transducer
Various radar site transducer, as pulsed radar system and continuous-wave radar system (wherein, comprise, frequency modulated continuous wave radar, pulse Doppler radar, moving target indicator, frequency agility system, synthetic aperture radar, anti-phase synthetic aperture radar, phased array radar), transmit to determine from the high frequency radio signal pulse of antenna transmission or continuous wave and measurement from target object reflection its position, scope, highly, the electromagnetic signal of direction and/or speed.This system can use the delay of reflected signal and/or the change of frequency to determine position and/or the speed of target object.The various configurations of radar site transducer can comprise reflector, synchronizer, power supply supply, oscillator, modulator, waveguide, duplexer/multiplexer, antenna, filter, receiver, preliminary treatment and reprocessing and control element, and/or be with by ELR nano wire, ELR, other ELR assemblies that ELR film and/or ELR paper tinsel are formed.
I.K. other position, displacement and liquid level sensor
Comprise at least part of by ELR nano wire, ELR is with, ELR film, ELR paper tinsel, or the other types transducer of the ELR assembly of other formation of structure of ELR material can produce the output signal of liquid level of the position (such as, contiguous) of expression, ohject displacement and/or liquid.Other positions, displacement and liquid level sensor non exhaustive examples can comprise the ELR assembly that formation is formed by ELR material at least in part, comprise following: (1) optics is close, displacement transducer and position transducer, it can comprise light source, photodetector (such as, photodiode, phototransistor, ccd array, cmos imaging array) and photoconduction and change assembly (such as lens, speculum, fiber optic cables, filter), as (a) optics bridge type magnetic sensor, b () uses the optics proximity detector of polarised light, (c) Fibre Optical Sensor, (d) Fabry-Pérot sensor, (e) grating sensor, (f) linear optics transducer, and (g) other optical position, displacement and liquid level sensor, (2) ultrasonic position, displacement and liquid level sensor (3) thickness and melt transducer and comprise: (a) melts transducer (such as, broken line meter, radiation transducer, light-pipe sensor, capacitive character or resonance ablatograph) and (b) film thickness gage probe is (such as, use capacitance sensor and the optical pickocff of electrode), (4) liquid level sensor, comprise such as, (a) resistor fluid face sensor, (b) optical liquid level sensor, (c) magnetic liquid face sensor, (d) capacitance level transducer (such as there is coaxial capacitance plate), and (e) transmission line liquid level sensor (such as, for detecting the transducer from liquid-vapor interface reflectivity), (5) positioning equipment, comprise optical positioning device, magnetic pickup positioning equipment, and inertia and gyro positioning equipment, (6) satellite navigation system, as global positioning system, GLONASS (Global Navigation Satellite System) (GNSS) etc.
II. take and motion sensor
In certain embodiments, transducer 3700 can be configured to provides instruction in the existence (" taking ") of monitored area human or animal or the output signal of object of which movement.This transducer can be used for toy, consumption electronic product, safety system, surveillance, energy management system, personal safety system, electrical equipment, and the system of many other types.
II.A capacitive occupant/motion sensor
By measuring the impact of the electric capacity of human body or animal body, capacitance type sensor can detect and take or humans/animals motion.Figure 53-L shows an example of capacitive occupant or motion sensor 5300.As shown in the figure, transducer 5300 can comprise one or more capacitor board 5305 or other capacitance structures (comprise, such as test board 5305a and datum plate 5305b), shielding (as driven shield), input source, the transducer of the capacitance variations between various capacitor board caused by the existence of the mankind 5325 or animal or element (such as, from the change of known reference electric capacity CREF5320) is detected with capacitance sensor 5330 or be configured to.Due to the coupling capacitance of people 5325 form with surrounding environment, comprise the coupling capacitance to test board 5305a and datum plate 5305b (being respectively C15310a and C25310b), the change of electric capacity may be caused.These assemblies some or all of can at least in part by ELR nano wire, and ELR is with, ELR film, ELR paper tinsel, or other formation of structures of ELR material.
II.B rubs electric explorer
Static state caused by the surface charge of being carried by the human or animal detecting the movement caused by triboelectric effect (or being commonly called as " electrostatic ") or the disturbance (such as 5415) of quasi-static electric field, various friction sensor detects people, the motion of animal or other object.Figure 54-L shows an example of the fricting movement detector 5400 of an one pole.As shown in the figure, friction electric transducer can comprise one or more battery lead plate 5405 or other electrode structure, and impedance transformer 5410 or other reprocessing electronic device, the electric charge of the battery lead plate/structural change caused is moved for detecting people 5420, animal or other charge carriers.These assemblies can by ELR nano wire, and ELR is with, ELR film, ELR paper tinsel, or other formation of structures of ELR material.
II.C photoelectricity motion sensor
Contrast visible or infrared light by detecting by the light produced between object and surrounding environment of reflections off objects or transmitting, various photoelectricity motion sensor detects the mankind in guarded region, the motion of animal or other objects.The light detected can be derived from a light source (as light-emitting diode, daylight, moonlight, incandescent lamp, laser etc.), or from this mobile object itself (such as, from human body and far red light).Figure 55-L is the schematic diagram of photoelectricity motion sensor 5500 general structure.As shown in the figure, this transducer can comprise one or more focus set 5505 (such as, camera lens, comprises the saturating border of pin hole, little lens, Fresnel plastic lens, and the speculum etc. comprising parabolic reflector); One or more photodetector 5510 (such as, bolometer, thermoelectric pile, thermoelectric element, photovoltaic cell, photoconductive cell, photo resistance, pvdf membrane, ccd sensor, cmos image sensor etc.) and post processing circuitry 5515, such as amplifier and comparator, be configured to the signal that reprocessing is produced by this optical detection device.These assemblies some or all of can be formed by ELR material at least in part.Such as, as described in more detail in this, each photodetector can by ELR nano wire, and ELR is with, ELR film, ELR paper tinsel, or other formation of structure of ELR material.As shown in the figure, when the visual field that target 5525 (such as people) crosses over focus set 5505 is moved (as shown by arrows), the image 5520 of this target moves and thus on photodetector 5510, produces photon flux, and it is different from the photon flux caused by the image of static environment.Light-sensitive element responds one and changes or interference voltage.Disturbance is detected by reprocessing electronic equipment.Can in safety system, energy conservation, consumer electronics, uses photodetector in toy etc.
II.D. there is transducer in optics
There is the existence of transducer inspected object in monitored region in various optics, is changed by the light quantity of reflections off objects or absorption by detecting.Figure 56-L is the schematic diagram of an embodiment of light Existing detector 5600.As shown in the figure, this optics Existing detector comprises light source or reflector 5615 (such as LED), is driven by driver 5625, produces light beam (as described here those) in the visual field of optical sensor 5620.Static background, by the light reflection light echo transducer of specified quantitative, which creates background output signal.When target 5640 appears in the visual field of optical sensor 5620, it reflects in the mode different from static environment or absorbs light.Therefore, optical sensor and light-electric pressure converter 5630 produce can survey output, is different from normal background signal, in response to the reflection/absorption of not sharing the same light of described target.As shown in the figure, this optics Existing detector can comprise various focusing and induction element as lens 5605 and photoconductive tube 5610, to produce light beam 5645 and/or to receive reverberation.In addition, this transducer can comprise processor 5635, is configured to the output signal of driving light source 5615 and process optical sensor 5620.These assemblies some or all of can be formed by ELR material at least in part.Such as, as described in more detail in this, different optical sensor components can by ELR nano wire, and ELR is with, ELR film, ELR paper tinsel, or other formation of structure of ELR material.This detector can be used for robot, hand dryer, tank, lavatory, lighting switch, and other consumption, business and family product.
II.E pressure motion sensor
By the door of monitoring, window, people or other objects move suddenly caused air pressure variations, and the motion sensor senses of various pressure is closed, invasion in the space that controls or other motions.Figure 57-L is the schematic cross-section of an example of illustrated air pressure gradient transducer 5700.As shown in the figure, air pressure gradient transducer 5700 can comprise the chamber 5725 from two relative wall forming sections: by metal or the metallic plate 5705 of metal or metallized flexible membrane 5710 or diaphragm (as types of metallized plastic films or metal forming) and rigidity, it comprises a steam vent 5715.Two metal surfaces, it can be formed by the material of ELR, has a coupling capacitance together.Therefore, film that the unexpected change of air pressure causes 5710 (from the neutral position shown in chain-dotted line) deviation can use capacitance sensor 5720, such as use the transducer of capacitive displacement sensor-based system and method described here, determine.Certainly, as mentioned above, for capacitive displacement transducer, other assemblies as motion sensor can be formed by ELR material.In other embodiments, air pressure gradient transducer 5700 can comprise the displacement transducer of other type, to determine the deflection of described film, and other displacement transducer as described herein.In such example, film and/or rigid plate may not be metals or metallized.
II.F takies and motion detector other
The transducer of other types comprises at least in part by nano wire, and band, film, paper tinsel, or the ELR assembly of other formation of structures of ELR material, it can produce the output signal that an instruction takies or moves.Other take, the various embodiments of existence or motion sensor can comprise the assembly formed by ELR material at least partly, comprise: radar system (as said), and other air pressure/pressure gradient sensor, acoustic sensor, detect the photoelectric sensor of break beam, pressure pad or other touch-sensitive surface, be embedded in stress or the strain detector of protection zone, comprise the switch sensor of magnetic switch, vibration detector, infrared motion detectors, ultrasonic detector, Video Motion Detection device, face identification system, laser detector, alarm sensor, magnetic reed switch, seek post machine, triangular measuring transducer, there is cotton gloves, and doppler radar sensor.
III. speed and acceleration transducer
In certain embodiments, transducer 3700 can be configured to provide the single shaft of the speed of directing object or the output signal of acceleration respectively or multiaxis velocity transducer or accelerometer.Velocity transducer can measure the linear of object or angular speed or movement velocity.Accelerometer can the natrual acceleration of surving coordinate acceleration or object, such as, by measuring the per unit mass of test weight or specific power.Among other things, accelerometer can be used for determining, directed, and coordinate acceleration (speed of the object in space changes), vibration, impacts, and decline.Multiple accelerometer can be used for detecting different acceleration, such as, as gradiometer.
Velocity transducer or acceleration transducer can be used for many application, include but not limited to: automobile (such as, the measurement of acceleration or speed, the evaluation of engine/drive system and braking system, electronic stabilizing control system, air bag), train, volcanology, business or industrial equipment, vibration measurement/monitoring, the measurement of seismic activity, inclination measurement, gravimeter, key health is monitored, space flight/avionic device, Inertial Navigation and Guidance system, Medical Devices, consumer product, comprise video game system, sports equipment, and other portable type electronic products, as mobile phone, shooting sum camera (such as, the determination in image stabilization and/or direction), smart mobile phone, music player, panel computer, laptop computer, personal digital assistant and other mobile computers.
In certain embodiments, position/displacement, speed and/or acceleration transducer, can use interchangeably, this is because the mathematical relationship between this tittle.As first example, in the application of low frequency or low noise, displacement transducer and induction speed and acceleration can be used in these other local method described.Additional reprocessing can be performed to the output signal of institute's displacement sensors, such as differential, to determine the mathematical derivative of one or more signal, show speed or acceleration.As second example, in intermediate frequency or media noise application, velocity transducer described herein and method can be used for sensing acceleration.Can perform additional reprocessing to the output signal of institute's displacement sensors, such as differential, to determine the mathematical derivative of one or more signal, shows acceleration.As in the 3rd example, acceleration described herein and/or velocity sensor system and method can be respectively used to determine speed and/or position/displacement., can perform additional reprocessing to the output signal of an acceleration and/or velocity transducer, such as mathematic integral determines speed and/or the position/displacement of object respectively.
III.A electromagnetic speed sensor
Figure 58-L represents the schematic diagram of the operation principle that electromagnetic speed sensor is described.As shown in the figure, transducer 5800 comprises the two or more induction coils 5810 and 5815 be connected in series on the rightabout of removable permanent magnet core 5805; Coil can partly or be formed by ELR material entirely.According to Faraday's law, move magnetic core in coil and can induce the voltage be directly proportional to the speed of core in coil.Therefore, the output voltage of these two coils can be measured thus determine the speed of this core, and be coupled to the speed of object of core.The arrangement of shown coil is only exemplary and can adopts other geometry, comprises and uses the one or more coils be wrapped in around moveable rotary magnetic core to angular velocity measurement.Shown transducer can be used to, such as, for sense vibrations speed.
III.B accelerometer has inertia mass
As shown in Figure 59-L, there is known weight and by spring 5920 by measuring, cantilever, hinge or other flexible member are coupled to the relatively large movable earthquake of described accelerometer housing, the displacement 5910 of inertia or Detection job 5915, the acceleration (a) of the object 5905 of the housing 5900 being couple to accelerometer determined by each accelerometer 5900.In order to measure displacement, accelerometer 5900 can use one or more displacement transducer, displacement transducer as described herein.(be included in the example that this further describes) in this embodiment, inertia mass, the displacement transducer of assembly, and/or other assembly all or part ofly can be formed by ELR material.
III.C capacitance acceleration transducer
The displacement of various capacitive accelerometer determination inertia mass, and the acceleration of object, the method changed by utilizing capacitive displacement, such as use be similar to the principle relevant to capacitive displacement transducer and system.As shown in Figure 60-L, in this embodiment, transducer 6000 can comprise (1) and be supported by spring or other flexible member 6020 (as silicon spring) and movable inertial mass 6005 and (2) two or more capacitor boards 6015 of being configured to movement in the housing 6025 of transducer, 6010, 6005 or element, it can comprise mass 6005 itself, removable capacitor board or element, such as be connected to described moveable mass (not shown), and/or fixed capacity plate or element 6005, 6010, its position is fixing relative to the housing 6025 of described accelerometer.Any or all these assemblies of transducer 6000 or other assembly can all or part ofly be formed by ELR material.Motion in the accelerator of inertia mass makes the electric capacity between each capacity cell (such as, C1, C2) change, due to the relative position of the change of capacity cell.(differential technology and additive method described herein can be comprised) in any suitable manner and detect this change electric capacity, and therefore for calculating the displacement of inertia mass, and this may be used for the acceleration of the object 6030 determining to be coupled to accelerometer housing 6025.In some instances, a capacitive accelerometer by micro Process, such as, can use MEMS technology or other technologies.
III.D. piezoresistance type acceleration sensor
By using pressure drag component, the displacement of various piezoresistive accelerometer determination inertial mass and be therefore coupled to the acceleration of object of accelerometer.In this example embodiment, transducer can comprise (1) by spring, hinge, or the removable inertia mass that supports of other flexible members and be configured to move in the housing of acceleration transducer, and the piezoresistive strain gauge element (further piezoresistive strain gauge mentioned herein being discussed) of the strain of (2) spring of causing for the displacement of measuring inertia mass or flexible member.Any or all these assemblies can all or part ofly be formed by ELR material.In some instances, piezoresistive accelerometer can micro Process, such as, uses MEMS technology or other technologies.
Figure 61-L shows the exploded view of an example of piezoresistive acceleration 6100.As shown in the figure, the recess in cap rock 6110 and basic unit 6105 form inertia mass 6115 can wherein in response to the chamber of acceleration movement.At the internal layer of silicon, inertia mass 6115 is coupled to support ring 6120 by elastic hinge 6125.Integrated straingauge 6130 on hinge provides the instruction displacement of inertial mass body and the output signal being derived from terminal of casing acceleration.
III.E. piezoelectric accelerometer
By using the displacement of piezoelectric element various piezoelectric acceleration determination mass, and therefore determine the acceleration of the object being coupled to accelerometer.As shown in Figure 62-L, in this example embodiment, transducer 6200 can comprise (1) relative to the moveable inertia mass 6205 of the housing 6220 of accelerometer, and it is coupled to described housing by spring, hinge or other elastic component 6210, (2) piezoelectric element 6225, as the element formed by ELR material, quartz crystal, barium titanate, plumbous zircon, lead titanates, or other ceramic piezoelectric material, and the motion being configured to respond the inertia mass with the signal of telecommunication (such as by shearing, is compressed, bending, or the movement of other type).Any or all these assemblies can all or part ofly be formed by ELR material.As shown in the figure, when the housing of acceleration transducer accelerates, it moves relative to inertial mass, and it applies power (such as, shearing, compression or bending force) at piezoelectric element, causes the electrical output signal representing this acceleration.Although the compression stress of showing, in other configuration, piezoelectric element can run into the power of other type from inertia mass.In some instances, a piezoelectric accelerometer by micro Process, such as, can use MEMS technology or other technologies.In some instances, piezoelectric element can be arranged on described removable mass and/or the spring in support inertia mass, hinge, or the piezoelectric film on micro Process cantilever beam.
III.F. heating plate accelerometer
Various heating plate accelerometer is determined heat the displacement of inertial mass and be therefore coupled to the object of accelerometer, by utilizing temperature sensor to detect the temperature fluctuation caused by the motion of inertia mass.Figure 63-L shows an example of heating plate accelerometer 6300 (omission top assembly), it comprises (1) moveable mass 6305, be configured to move relative to the housing of described acceleration transducer and by cantilever beam 6310 or hinge support, (2) heating element 6315 (as resistor), be configured to heating inertia mass to set point of temperature, (3) one or more fin 6320 be separated from inertia mass via heat-conducting gas 6325 and be configured to receive heat from inertia mass by gas, (4) one or more temperature sensor 6330, such as thermoelectric pile, to be placed among cantilever beam or hinge (or other assemblies) or on, or in its vicinity, and be configured to determine that inertia mass is shifted from its centre position the temperature fluctuation (or another assembly) of the cantilever beam caused.Partly or entirely can all or part ofly being formed by ELR material of these components any or other component.
In other embodiments, inertia mass can be used as by the gas of a resistor or other heating element heats.The temperature fluctuation that when accelerometer can use thermoelectric pile or other temperature sensors to carry out sense acceleration (namely from a convection current power), the motion of heated air causes.In such example, heating element, temperature sensor, and/or other assembly can all or part ofly be formed by ELR material.
The velocity transducer of III.G other types and accelerometer
The transducer of other types comprises at least partly by ELR nano wire, and ELR is with, and ELR film, ELR paper tinsel, or the ELR assembly of other formation of structure of ELR material, it can produce the output signal of instruction speed and acceleration.The exhaustive embodiment of velocity transducer and accelerometer (comprise gyroscope and gravity detection device as inclination angle or angle detection), it can comprise the assembly formed by ELR material at least in part, comprise following classes speed or or acceleration transducer: satellite navigation system such as global positioning system is unified in GLONASS (Global Navigation Satellite System), rotor gyro (as magnetically suspended gyroscope), gravimeter (comprises the gravimeter that (a) uses magnetic levitation ball, and the coil or spheroid that are formed by ELR material can be used, and (b) comprises the bobbin of covering ELR material and the gravimeter of magnet at least partly), single piece of silicon gyroscope, fibre optic gyroscope, conduction gravity sensor (such as, mercoid switch, electrolytic inclination sensor), adopt the obliquity sensor of photodetector array, piezoelectric transducer, micro Process electric capacity (MEMS) transducer, shear mode transducer, the bulk capacitor transducer of surface micro-fabrication processing, the piezoresistance sensor in bulk of micro Process processing, condenser type spring-mass base portion transducer, electromechanical coupling system (servo force balance) transducer, empty balance sensor, strain gauge transducer resonance sensor, heat sensor (such as, sub-micron CMOS technology), magnetic induction sensor, variable-reluctance transducer, Fibre Optical Sensor, surface acoustic wave (SAW) transducer, laser sensor, DC response transducer, three-axis sensor, mode tuning jump bit transducer, swing integrating gyroscope transducer and seat cushion transducer.The sensor that can be formed by ELR material at least in part, the kind that non exhaustive example comprises transducer is as follows: (1) free fall transducer, (2) inclinometer, (3) laser range finder, (4) linear encoder, (5) liquid capacitance-type inclinator, (6) mileometer, (7) rotary encoder, (8) automatic adjust-angle transformer sensor (9) is motion sensor (10) tachometer (11) sonigauge and (12) sonar sensor suddenly.
IV. power, strain and touch sensor
In some instances, transducer 3700 can be the transducer comprising ELR material, and the output signal of its power being configured to provide instruction to be applied to object, strain and/or touch.Be similar to the transducer of other type, power or strain transducer comprise ELR material, it can be (1) basis weight sensor, be configured to ergometry or strain, and in electrical output signal reflected measurement value, or (2) are configured to detect more than (or less) of the power of a threshold value or the basis weight sensor of strain
IV.A piezoelectric cable
Figure 64-L shows and can be used for providing instruction power, stress, and/or an example of the piezoelectric cable of the output signal touched.As shown in the figure, coaxial piezoelectric transducer 6400 comprises piezoelectric 6405, such as piezopolymer or piezoelectricity powder, forms the dielectric part between center conductor core 6415 and the outer conductor sheath 6410 of coaxial cable.When cable is compressed or tensile force, it can produce the response electric charge or voltage that are picked up by conductor.Such cable has various uses, comprises monitoring vibration and mechanical transport.These cables can be reequiped, Shi Qi center conductor cores and/or outer conductor screen is all or part of is formed by ELR material.
IV.B sensor of composite forces (comprising load unit)
Sensor of composite forces, or power unit, can (1) use the first transducer unknown force to be converted to M signal and (2) to use second transducer (i.e. photostat) that M signal is converted to electrical output signal.Figure 65 A-L shows an example of sensor of composite forces 6500, it has spring 6510 or other power-displacement trasducers convert the power 6505 of applying to displacement, then displacement is measured by displacement transducer 6515, as the displacement transducer of linear variable differential transformation transducer or any other type as above.Figure 65 B-L shows second example of sensor of composite forces 6550, and it has bellows 6555, diaphragm, or other power-pressure converter converts applied force to fluid under pressure.Then measure produced fluid pressure by pressure sensor 6560, as described herein those.In the 3rd example, not shown, unknown power is by one or more straingauges (as said) of mechanical component (as elastic component), distortion, and it can be disposed in bridge structure.Distortion is converted to the signal of telecommunication by straingauge.
Other sensor of composite forces/power unit comprises: those use operation (cantilever beam, bent beam, compression, stretching, the generalization of different operating principles, shear, moment of torsion, hollow) and/or with different structure (such as, camber beam, collimated light beam or binocular beams, tank, shear beam, single-column, multicolumn, thin pancake, loaded button, single-ended shear beam, double end shear beam, " S " type, interior stub end, digitalized electric gesture, diaphragm/barrier film, torsion ring, bending ring, proving ring, or load pin).Any sensor of composite forces as described herein can use ELR material, such as, being converted to by this M signal in the photostat of electrical output signal (as described herein those).
IV.C strain gauge
The strain (distortion) of the pressure drag measure of the change object of the resistance that various strain gauge is caused by the distortion producing and/or measure.Figure 66-L shows wire rod strain gauge 6600 examples, and it can be used for the output signal producing indicated strain.As shown in the figure, strain gauge comprises the resistive element 6610 (such as, wire rod or paper tinsel) being combined with elastic insulated backing 6605, its can bondedly stand apply strain object on or be otherwise connected with it.The resistance of change can be measured with Wheatstone bridge or other electric resistance sensor.Resistive element and/or electric resistance sensor can be formed by ELR material.Although can use various shape, but resistive element is formed the snakelike form with the multiple longitudinal divisionses longer than crosspiece usually.Multiple strain gauge can be arranged (such as, measuring the strain in disalignment), and they also can be disposed in bridge structure.In certain embodiments, strain gauge also can comprise temperature compensating element, its be configured to that compensates causes resistance variations.ELR material also in conjunction with the strain gauge of other type, can comprise semiconductor strain gauge.
IV.D. switch touch sensor
Contact force in various contact switch touch sensor detectability fixed point.Figure 67-L shows an example of switch touch sensor 6700.As the cutaway view of Figure 67-L, this transducer 6700 comprises the flexible conductive surface 6705 maybe can pressed of ground connection (such as, a flexible foils, film such as polyester film or polypropylene are printed with conductive ink), 6720 dividing plates 6735 with holes by tool and fixed conductor 6710 are (as aluminium foil, conductive trace, or printing conductive inks or be otherwise arranged on rigidity backing 6740) separate.Fixed conductor is coupled to pull-up resistor 6730.Be passed down through a hole when deflecting fexible conductor from object 6740 applied force (F), described fexible conductor contacts fixed conductor 6710b and makes pull-up resistor ground connection, to reduce driver output voltage.If more than one sensing region is provided, they can by multiplexer 6725 multiplexing.Certainly, other configurations can be used to realize similar on/off switch effect (such as fexible conductor, instead of fixing conductor, can be connected to pull-up resistor; Use two compliant conductive surfaces instead of fixing conductor).In any such construction of switch, pull-up resistor, compliant conductive surface, fixed conductor, and/or other assembly any can all or part ofly be formed by ELR material.
IV.E. piezoresistive tactile sensor
Various pressure drag touch sensor detects contact force at qualified point, by detecting the change of the resistance of the pressure drag component that contact force causes.Figure 68-L shows the cutaway view of an example of pressure drag touch sensor 6800.As shown in the figure, transducer 6800 comprises one or more conductivity pusher 6805 separated by piezoresistor 6810 such as conductive elastomer or pressure sensitive ink and conductive plate 6815 or other conductive surface.Applied force (f) on conductivity pusher 6805a, the change of the contact area of resistor and/or the thickness of resistor may be caused, wherein any one will cause the change of resistance between propeller and plate, can be detected and process to determine the generation of contact force.Figure 69-L shows another example of pressure drag touch sensor 6900.As shown in the figure, this transducer comprises two or more electrode 6905,6910, and it can be formed interdigital or other structures, and be arranged in plastics or other carrier film (not shown), electrode is contacted with the semiconductive polymer 6915 of display piezo-resistance.In any pressure drag touch sensor, resistive element, conducting element and/or other assembly can all or part ofly be formed by ELR material.
IV.F. capacitive haptic sensors
Various capacitive touch sensors detects contact force at qualified point, by detecting one of the following capacitance variations caused: in (1) transducer, the geometry of the change of capacity cell (such as, change distance between element or change the surface area of element), due to applied mechanical force, or the existence of (2) conductive object (such as, the finger of people), this electric capacity is coupled to the capacity cell in described transducer in the mode changed along with the distance between object and capacity cell.All types of condenser type contact sensor, comprises those what describe in further detail at this, can comprise each assembly, comprise capacitive component, the electrode such as formed by ELR material or other conductors.
Generally speaking, can be regarded as of capacitance type sensor of the first kind comprises power-displacement trasducer (such as, be connected to the button in the flexible member such as elastomer-filled chamber of spring or other types), it produces the displacement of the capacity cell of the sensor measurement using capacitance displacement sensor in response to the power applied.The capacitive displacement transducer used can be one in those capacitance displacement sensors described here, such as at Figure 41-L in 45-L.Figure 70-L shows the cutaway view of an example of capacitive touch sensors 7000, and it comprises the conductive electrode 7005 that the first flexibility maybe can be pressed or the capacitive element separated with the second conductive electrode 7015 or capacity cell by elastomeric dielectric 7010.Described second electrode can be patterned or otherwise be arranged in rigid substrate 7020.Dielectric used can have high-k.When power (F) 7030 is applied by object 7025, the first dangler 7005 deformability, thus change the electric capacity between two electrodes.Transducer 7000 can detect change electric capacity, and analyzes it to determine applied force.Change electric capacity can measure in any manner known in the art, comprise and measure time delay caused by variable capacitance or by using the part of transducer 7000 as oscillator and the frequency response of measuring oscillator.
Figure 71 A-L shows another example of capacitive touch sensors 7100, it comprise be arranged in such as glass or transparent polymer touch screen surface on or be otherwise coupled to the pair of electrodes 7105a of downside of touch-surface 7110,7105b.Electrode 7105b ground connection.Two electrodes can be arranged to interdigitated structure, or any other suitable structure.This has baseline coupling capacitance Ca to electrode, uses those methods as known in the art described above to be monitored by capacitance sensor 7120, thus measures electric capacity.When conductive body 7115 (such as, a finger) close to surface time, it is with described first electrode 7105a and the second electrode 7105b (as schemed Cat and Cbt) capacitive coupling, thus the total capacitance that change is recorded by capacitance sensor 7120.Coupling capacitance between object and two electrodes 7105 can be the function (if conductive object is deformable) of the Distance geometry applied force of object and electrode.Although only have two electrodes to be illustrated, but other structure any of array, grid (such as row and column) or multiple electrode also can use.If there is multiple electrode to be used, the various electric capacity between the various combinations in multiple electrode can be monitored, to detect the position of tactile.
Figure 71 B-L shows another embodiment of capacitive haptic sensors 7150, and it comprises on the touch-surface that is arranged in as glass or polymer touch screen surface or is otherwise coupled to the unearthed electrode 7105 of downside of touch-surface.This electrode has baseline coupling direct-to-ground capacitance (Ca), and it is monitored by capacitance sensor 7120.When having self coupling direct-to-ground capacitance (C gND) conductive object 7115 (such as, a finger) close to surface time, its is formed and the coupling capacitance of electrode 7105 (indicated by Cat), thus changes the total capacitance recorded by static capacity type sensor 7120.Coupling capacitance between electrode 7105 and conductive object 7115 is the function (if conductive object is deformable) of the Distance geometry applied force of object and electrode.Although only have two electrodes to be illustrated, but other structure any of array, grid (such as row and column) or multiple electrode also can use, and the electric capacity between multiple electrode and ground can be monitored, to detect the position of tactile.
IV.G. the power of other types, strain, and touch sensor
Comprise the power of the assembly formed by ELR material at least in part, strain, touch sensor non exhaustive examples comprises: (1) pressure sensitive pads, (2) to the transducer of known quality granitational equilibrium unknown force, (3) transducer, to the acceleration of applied unknown force determination known quality, (4) transducer, to electromagnetic force equilibrium unknown force, (5) transducer, convert unknown force to fluid pressure, then the fluid pressure obtained is measured, (6) any piezoelectricity touch sensor, so comprise the transducer that design has the piezoelectric film using active or Passive Mode, as active ultrasonic coupled with touch sensors, transducer has the passive piezoelectricity bar be arranged on rubber peel or other touch-surface, piezoelectric membrane switch can use piezoelectric film stack or otherwise be arranged in spring beam, on piezoelectric membrane impulse interference wave switch and piezoelectric film vibrating sensor, (7) MEMS sensor, comprise formed by silicon materials and there is the MEMS threshold touch sensor of a mechanical hysteresis, (8) acoustic contact transducer, the user comprised in recognition object touches in the Acoustic Wave Propagation that its surface causes or uses surface acoustic wave technique to measure the absorption that ultrasonic wave skims over touch panel, (9) optical pickocff, comprising the intensity variation that those use LED and photoelectric detector to cause to detect touch event, (9) piezoelectric force transducer, comprising those uses piezoelectric vibrator or resonator to detect exerted forces.
The example of the power that can be formed by ELR material at least in part, density and liquid level sensor exhaustive, comprise: (1) hemp meter (bhangmeters), (2) densimeter (3) magnetic fluid level gauge, (4) nuclear density meter (5) torque sensor, and (6) viscosimeter.
The example that the application of power described herein, strain and touch sensor is non-exhaustive comprises: robot; Touch-screen display, keyboard, and other equipment; Biomedical devices, such as dental appliance, respiratory monitor, and prosthese; Industrial equipment, as assembly line, automatic business processing, axle rotates; Impulse detection; Practical metering; Automatic vending machine; And musical instrument.
V. pressure sensor
In some instances, transducer 3700 can be the transducer comprising ELR material, and is configured to the output signal providing indicated pressure.
V.A. composite pressure sensor
The pressure sensor comprising ELR material can comprise composite pressure sensor, wherein unknown pressure acts on one or more deformable element (as Bourdon tube, barrier film, capsule, bellows, bucket pipe, film, thin plate, or other assemblies experiencing structural change under stress), to produce the mechanical displacement etc. recorded by displacement transducer displacement transducer as described herein.Figure 57-L, as previously mentioned, show such composite pressure sensor, it can use capacitance sensor to measure displacement.
V.B. piezoresistive pressure sensor
Various pressure sensor adopts pressure drag component gaging pressure.This pressure sensor can use ELR assembly, as the pressure drag component formed by ELR material in whole or in part, and resistive element, or conducting element.Figure 72-L shows the cutaway view of an example of the composite pressure sensor 7200 that can be used as aneroid barometer.As shown in the figure, this transducer comprises the balancing gate pit 7205 of the air vent hole 7220 and barrier film 7210 had in response to the pressure p with mechanical displacement.Membrane mechanical is coupled to straingauge 7215 (all as described herein those), thus makes strain gauge provide the signal of telecommunication of the described barrier film of instruction relative to the mechanical displacement of reprocessing electronic device 7225.In certain embodiments, barrier film can use micro-processing technology to be formed by silicon.
Figure 73-L shows the cutaway view of another embodiment of the pressure sensor 7300 that can all or part ofly be formed by ELR material.As shown in the figure, this transducer comprises the balancing gate pit 7325 of air vent hole 7320 and barrier film 7305, its by bending response in pressure; Thin membrane can be processed by micro Process or other silicon treatment process manufacture.To be embedded in film or on it and bearing edge structure be one or more pressure drag components 7310,7315 (such as, piezoresistive strain gauge), it is formed by selectivity DIFFUSION TREATMENT, injection, doping or the doped silicon regions that otherwise processes.When pressure deflection film 7305, the strain of deflection can cause the change of the resistance value of pressure drag component in film, and it can use electric resistance sensor to detect.In some instances, one or more pressure drag component can connect into Wheatstone bridge or other bridge construction.
Certainly; other configurations of piezoresistive pressure sensor are possible; include but not limited to use the piezoresistive pressure sensor of middle convergent-divergent pressure plare (or other operator guards) and have be configured to be convenient to measure absolute pressure, pressure reduction, or the encapsulated sensor of normal pressure.In certain embodiments, pressure drag component maybe can be performed other by temperature-compensating (such as, by resistor or other temperature-compensation circuits of temperature stabilization) reprocessing to compensate the displacement of the resistance value of the pressure drag component that be caused by temperature.
V.C. variable reluctance pressure sensor
Various pressure sensor gaging pressure, by detecting the change of the magnetic resistance in differential transformers that the displacement of magnetic conductive vibrating membrane causes.This pressure sensor can use ELR assembly, such as all or part of coil, other conductor or the magnetic conductive component formed by ELR material.Figure 74 A-L and 74B-L shows the cutaway view of variable reluctance pressure sensor 7400.As shown in the figure, transducer 7400 comprises and is wrapped in by coil 7415 assembly and magnetic conductive vibrating membrane 7405 that E core 7410 formed, and itself and this assembly separates via air gap.Figure 74 A-L shows the diaphragm in centre position, has the air gap of D1.As Figure 74 B-L, then during pressure change, diaphragm deflection (there is the direction depending on pressure change), thus size of gaps is changed into D2.The inductance of this core-coil assembly of size modulations of air gap.Therefore can measurement components inductance change to determine pressure.Transducer 7400 typically comprise be positioned at described barrier film opposite side on and be arranged as two core-coil assemblies of differential transformers, thus make inductance change and therefore can determine pressure.
V.D. other pressure sensors
The non exhaustive pressure sensor that can comprise the assembly formed by ELR material at least partly comprises following: the pressure sensor of (1) mercury; (2) composite pressure sensor, as silicon diaphragm capacitive pressure transducer, it uses pressure-displacement transducer (such as, film, diaphragm (such as silicon diaphragm), bellows, etc.) produce use capacitance displacement sensor and technology, all as described herein displacements that those are measured (such as, as the silicon diaphragm displacement of a capacitor board or another capacitor board); (3) optoelectric pressure transducer, comprises and uses Fabry-Perot interferometer to come the deflection of measuring diaphragm or the transducer of similar pressure-displacement component; (4) utilize flowmeter as the indirect pressure transducer of differential pressure pickup; (5) vacuum transducer, as Pirani gage, ionization gauge (comprising Bei Ade-Alpert vacuum transducer), gas towing Pressure gauge, and the vacuum transducer of film (comprise, such as, MEMS silicon facility); (6) barometer (7) air gauge; (8) boost pressure gauge; (9) hot filament ionization gauge; (10) the permanent underground measuring instrument of MacLeod's Pressure gauge (11), and (12) timing pressure gauge.
VI. flow sensor
In some instances, transducer 3700 can be the transducer comprising ELR material, and be configured to provide the output signal of the mass flowrate (or correlative, the local of such as liquid or average speed) of instruction volume flow or liquid such as liquid or gas.
VI.A. barometric gradient flow sensor
Various flow sensor is by using one or more pressure sensor to detect by the flow resistance introduced as hole, porous plug, and the barometric gradient of the gas that causes of Venturi tube (namely having the pipe of tapered profiles) or other liquid.Usually, such transducer can be used to the flow measuring inviscid incompressible liquid.Figure 75-L shows the cutaway view of an example of barometric gradient flow sensor 7500.As shown in the figure, transducer 7500 comprises the first chamber 7505, and it comprises the capacitive pressure transducer 7510 with the second chamber 7550.After gas enters the first chamber 7505 by the first opening or entrance 7540, there is in the first chamber the first pressure P 1.Then gas enters the second chamber 7550 by the slype 7525 with relatively high resistance to pressure, and it has the second different pressure P 2 there.Then gas is flowed out from the second chamber by opening or outlet 7530.The pressure differential (between P1 and P2) that narrow, resistance hole causes is determined by the deflection of measuring the film 7555 using capacitor board 7520.In such example, capacitor board and/or other assembly can all or part ofly be formed by ELR material.Although Figure 75-L shows capacitance pressure transducer, but the pressure sensor of other types, comprise containing those of ELR material, replaceablely comprise as variable inductance described herein or describe piezoresistive pressure sensor.
VI.B heat transfer fluid quantity sensor
By detecting the speed of thermal diffusion in flow media (such as liquid), flow velocity measured by various heat transfer fluid quantity sensor or thermoanemomete, and its temperature by analysis stream moving medium, temperature difference and/or heating power signal are determined.The example of heat transfer fluid quantity sensor comprises following: (1) hot wire anemometer and hot film anemometer, (2) thermoanemomete be made up of three parts comprises two Temperature Detector (such as resistance, semiconductor or optical profile type Temperature Detector) and heating element between them, (3) thermoanemomete dimerous, comprise the medium temp reference sensor of Part I, and comprise heater and be thermally coupled to the Part II of temperature sensor (comprising temperature sensor can be thermistor) of heater, (4) miniflow Heat transmission transducer, comprise MEMS gas flow sensor, it can adopt the thermoelectric pile as temperature sensor, cantilever design and/or the design from thermal resistance sensor.The application of thermoanemomete comprises the measurement (such as, in wind-tunnel) of turbulent flow, flow rate mode, and blade wakes up (such as at radial compressor)
Figure 76-L shows the circuit diagram 7600 of an example of constant-temperature heating wires air velocity transducer.As shown in the figure, transducer 7600 comprises the temperature (illustrating with arrow) that the wire with resistance or film 7615 (being such as deposited on the conducting film on an insulator such as ceramic substrate) are heated to the liquid exceeding the flowing of its two ends.Liquid is by the wire of heating relevant to flow velocity for cooling or film.Flow velocity is determined: (1) determines the power in order to keep needed for wire or film steady temperature by one of following, or (2) maintain the power needed for constant voltage of whole silk or film, and determine that the liquid temperature striden across caused by wire or film reduces (it can be determined by the temperature-dependent resistor measuring heated filament or the torrid zone in some embodiments).In Figure 76-L, the empty balance resistance bridge circuit 7610 being connected to servo amplifier 7605 can guarantee that steady temperature is kept; Output voltage Vout represents mass velocity.
Certainly, heated filament or the hotting mask of various configuration can be used, comprise by supporting the wire of pin support and being arranged on wedge shape, hemisphere, cylindrical, conical, the conducting film on parabola shaped and smooth stayed surface.In addition, also the circuit of other types many can be used detect the variations in temperature keeping the power needed for steady temperature and/or measure in heated filament or hotting mask.In any example of a thermal type air velocity transducer, as described herein those, various circuit element, as resistance, heated filament/hotting mask, temperature sensor, wire and/or amplifier can all or part ofly be formed from ELR material.
VI.C. ultrasonic flow transducer
Various flow sensor is by using ultrasonic wave to measure flow velocity thus detecting propagation time or delay, frequency shift (FS) and/or the phase shift affected by flow media.In some instances, ultrasonic flow transducer can realize based on Doppler effect.In other embodiments, ultrasonic flow transducer can detect the effective ultrasonic velocity change in flow media.Ultrasonic flowmeter can comprise piezoelectric element, or be configured to other assembly being used as supersonic generator and/or ultrasonic receiver, and be configured to produce ultrasonic signal and/or detect frequency shift (FS), various circuit (such as driver, the oscillator of the phase shift of propagation time or delay or ultrasonic signal, modulator/demodulator, amplifier, transformer, electrode, wire, clock and selector/switch).Any or all these assemblies or other assembly, can all or part ofly be formed by ELR material.
V.I.D. other flow sensors
Can comprise and at least part of comprise following content by the flow sensor of the various examples that ELR material is formed: (1) transmission sensor, detection is incorporated into the label of the working fluid that flow velocity is detected (such as, a ball float, radioelement, dyestuff (such as, colored liquid), or different gas/liquid) motion (2) cross the line of magnetic induction in response to conducting liquid, DC and AC electromagnetic flow transducer record strides across the voltage of pickoff electrode, and wind sensor (3), a pair piezoelectricity or thermoelectric element is such as used to detect the change of gas velocity, (4) Coriolis mass flow sensor, for direct measurement quality flow rate, its vibrating tube with entrance and import that electromechanical driving system can be adopted to drive, (5) the towing tension transducer dragging element measurement liquid flow is utilized, drag element and be coupled to rigid basement by flexible beam or other elastic cantilever, those strain gauges as described herein are used to measure under this flow its distortion, (6) mechanical meters, as the stopwatch that struggles against, piston meter/rotary-piston, flowmeter with variable area, turbine flowmeter, Woltmann flowmeter, single channel flowmeter, multistream flowmeter, Pei Erdun takes turns, oval gear flowmeter, nutating disk meter, (7) based on the flowmeter of pressure, such as venture tube, restricting orifice, Dall tube, Pitot tube and porous pressure probe, (8) light stream gauge, (9) transducer of open channel flow rate method is adopted, as bottom horizontal flow sheet, area/speed, dyestuff detects and acoustic Doppler velocimeter, (10) thermal mass flow meter, (11) electromagnetism, ultrasonic wave and coriolis flowmeter (comprise described herein those), (12) cryogenic flow quantity sensor, (13), mass air flow sensor, (14), gas meter, (15) water meter, (16) transducer adopting Laser Doppler Flow to measure.
VII. acoustic sensor, comprises microphone
In some instances, transducer 3700 can be the transducer comprising ELR material, such as microphone, and is configured to the output signal providing instruction vocal input.Most of examples of sonic transducer comprise moving regulator and are configured to produce the displacement transducer of instruction in response to the signal of telecommunication (such as described herein those) of the deflection of the barrier film of vocal input.The displacement transducer of acoustic sensor or other element can comprise ELR material.Some examples of acoustic sensor can comprise extra assembly, such as interface circuit, muffler, focusing mirror or lens, or other assembly.Acoustic sensor can be used for multiple application as microphone, includes but not limited to, hearing aids, video tape recorder, karaoke OK system, VOIP system, film making, phone (comprising mobile phone), audio engineering, laptop computer, speech recognition system, complicated transducer, microbalance, SAW device and vibrating sensing.
VII.A. Electret Condencer Microphone
Various Electret Condencer Microphone is by using capacitive displacement sensing technology to measure acoustical signal thus the motion of membrane that causes of the acoustic energy of detection signal.Figure 77-L shows the circuit diagram of an example of Electret Condencer Microphone 7700.Circuit shown in Figure 77-L is self-explantory by the component value of scheming and depend on application usually, and is therefore left out from this discussion.As shown in the figure, this electrostatic microphone has barrier film 7702, and it has the first electrode 7705 or disposed thereon or be otherwise coupled to its capacity cell, and is configured to respond acoustic pressure by moving relative to plate 7710 after fixing.After fixing, plate is coupled to Charge Source 7720 as external power source, electret layer, internal electric source or phantom power.Barrier film and the first electrode, produce the capacitor discharge thus the signal of telecommunication of this acoustic signal of generation expression that can be detected and amplify relative to the motion of described rear plate 7710.As shown in the figure, in certain embodiments, in order to improve the linearity and frequency range, Electret Condencer Microphone 7700 can also comprise feedback circuit, it is configured to driving second electrode 7715, as providing the actuator of machine feedback (barrier film 7702 such as, by means of electrostatic force equipment deflects).In some instances, the first electrode 7705 and the second electrode 7715 can for being formed in the interdigital pattern on rear bulkhead 7702.In capacitance microphone, electrode, other conductor and/or other assemblies of circuit (such as, capacitor, resistor and amplifier) can form all or part of by ELR material.In certain embodiments, barrier film can be manufactured by silicon.In certain embodiments, diaphragm itself can serve as the movable platen of sensing capacitor.Certainly, in certain embodiments, charge power supply can be connected to traveling electrode 7705, instead of fixing rear plate 7710.In some instances, this Electret Condencer Microphone can comprise two diaphragms of electrical connection thus provide a series of polar mode (such as, heart-shaped, omnidirectional, and Fig. 8).
In some radio frequencies (RF) or high frequency embodiment of capacitance microphone, by the low noise oscillator capacitance variations that to produce extra radiofrequency signal can be (1) is caused by the deflection of diaphragm modulate (such as frequency modulation(FM)) and, or (2) are by comprising resonant circuit modulation (such as amplitude modulation(PAM)) of capacitor sensor.Demodulator produces the audio signal of a low noise.In these examples, the part or all of assembly of low noise oscillator and/or resonant circuit (such as, conductivity, resistive, capacitive character or inductive element) also can all or part ofly be formed by ELR material.
In conjunction with ELR material capacitance microphone this can be used for, in many application, including but not limited to, telephony transmitter, microphone of carok and high-fidelity music center or laboratory microphone.
VII.B electret microphone
Various electret microphone utilizes capacitive displacement sensing technology to measure acoustical signal, thus the motion of electret vibrating membrane that the acoustic energy of detection signal causes.Figure 78-L shows the schematic cross-section of an example of electret microphone 7800.As shown in the figure, this electret microphone comprises metallized electret vibrating membrane 7820 (can be formed by teflon FEP or paper tinsel in some instances) and comprises the metal layer 7805 being arranged on electret layer 7810 or element or being coupled with it further, and by air gap and metal or after metallizing plate 7815 be separated.Two hardwares 7805,7815 can be connected by resistance or impedance component 7825.Hardware and/or resistive element can all or part ofly be formed by ELR material.The displacement of electret vibrating membrane produces the output voltage striding across the change of resistive element.Electret layer 7810 by permanent electrical polarization, typical crystallinity, dielectric material formed.In some instances, this electret microphone can not use applying DC offset voltage, and in other (such as, for ultrasound examination), uses DC bias voltage.In some instances, this electret microphone can comprise preamplifier.Electret microphone in conjunction with ELR material can be used for many application, includes but not limited to, earphone, mobile electronic device if phone, mobile phone, removable computer are as notebook computer and panel computer, high-quality recording microphone wind and small-sized sound pick-up outfit.
VII.C. dynamic microphones
Various dynamic microphones is by using the acoustical signal of electromagnetic induction commercial measurement, thus the motion of diaphragm that the acoustic energy of detection signal causes.Figure 79-L shows the cross sectional representation of moving coil dynamic microphones 7900.As shown in the figure, microphone 7900 comprises the barrier film 7905 being connected to moveable induction coil 7910, and it can all or part ofly be formed by ELR material.When diaphragm displacement is in response to sound wave, coil moves thus produces instruction causes the change of the cross-line circle of displacement output voltage by electromagnetism in the magnetic field of magnet 7915.Other example of dynamic microphones comprises belt microphone, and it comprises the metal tape (usual Corrugated strips) be positioned in the magnetic field of magnet.Cause the vibration of band may produce across band the output signal of telecommunication representing its vibration by sound wave.The band of belt microphone and/or other assemblies can be formed by ELR material.In some instances, band can be formed by ELR nano wire.
VII.D. solid-state detector of sound
Various solid-state detector of sounds measure the mechanical oscillation of solid state sensor, such as, detect, qualification, or measure the acoustic characteristic of this transducer of modulation, such as acoustic wave propagation velocity, phase velocity and/or attenuation coefficient in solids, excitation (as pressure, liquid, humidity, gas molecule, displacement, stress, power, temperature, chemical substance, compound, biomolecule, quality, or microcosmic particle).Solid-state sound wave detector can be used to, such as, in gravity and acoustics viscosity sensor.Solid-state detector of sound can comprise one or more piezoelectric element, as film piezo-electric, quartz crystal or other piezoelectric crystal, to be arranged on electrode, under or be in contact with it, it can be formed by ELR material in interdigital.Each piezoelectric element can be disposed in substrate, under or among, such as silicon substrate.In other embodiments, piezoelectric element can be electrode (it can be formed by ELR material), it is arranged on piezoelectric board or crystal, under or be otherwise coupled (such as, lithographically).
In some instances, solid-state detector of sound comprises piezoelectricity " transmitting " element that (1) is configured to the one end in plate or path producing sound wave from the signal of telecommunication, (2) at the element of the piezoelectricity " reception " of plate or the path other end, be configured to receive sound wave, the excitation modulation of this sound wave during ripple is launched by reflector is sick and received by plate or path, and converts these sound waves to the signal of telecommunication.In certain embodiments, intermediate plate between reflector and receiver or path can comprise the film of chemistry selection, adhesive, adsorptivity, moisture absorption or other type, coating, film, or other surface, the change of its machinery, chemistry, electricity or other characteristic is present in specific chemistry, mechanical or other stimulus.The embodiment of solid-state sonic transducer can comprise flexed plate transducer, surface acoustic wave plate transducer and use the transducer of following classes sound wave: bulk acoustic wave, thickness shearing mode, level cuts acoustic panel pattern, level cuts surface acoustic wave (or surface transverse wave), Love wave, surperficial gliding mass ripple and Lamb wave.
According to the type of use and operating mode in design, solid-state acoustic transducer can be used for detecting, and measures or characterization pressure, torque, impacts, power, quality, steam, dew point, humidity, biomolecule, chemical substance, temperature, thickness, or other excitations.
Other acoustic sensors of VII.E
The non-exhaustive examples that can comprise the acoustic sensor of the assembly formed by ELR material at least partly comprises following: (1) resistance-type microphone, comprise carbon microphone and pressure resistance type microphone, it comprises pressure resistance type transducer (such as, stress sensitive resistance in micro Process diaphragm pressure sensor or its volume resistivity are pressure-sensitive powder), acoustical signal is configured to be transformed into electrical output signal, (2) optical fiber microphone (comprising optical fiber interference type microphone), it can comprise light source (such as lasing light emitter), optical interdferometer (such as Michelson interferometer), and reflecting plate barrier film, and it can be used for the application having hostile environment or require EMI/RFI vulnerability to jamming, as structural acoustic test, industrial steam turbine, turbo jet engine or rocket engine, industry and supervision acoustic monitoring, MRI and jet noise abatement, (3) laser microphone, aim at corresponding to the particulate of acoustic stress or the laser of window or other plane surfaces with vibration, then reverberation is analyzed, (4) piezoelectric microphones of piezoelectric element is used (such as, piezoelectric crystal, piezoelectric ceramic plate, or piezoelectric film), directly acoustic pressure or other mechanical stress are converted to the voice signal representing the signal of telecommunication, and can be used to, such as voice activated device, blood pressure measurement, sound measurement under water, contact the pick-up in microphone and instrument, (5) MEMS sensor, it can comprise the barrier film formed by silicon, and the Electret Condencer Microphone using same or similar displacement sensing principle can be configured to, (6) geophone, (7) hydrophone, (8) seismic detector, (9) ultrasonic sensor, and (10) sonar sensor.
VII. humidity and wetness sensor
In some instances, transducer 3700 can be as lower sensor, and it comprises ELR material, and is configured to provide the instruction moisture of sample or the output signal of humidity.As used herein, " moisture " refers to by absorbing or adsorbing the liquid or solid containing gauge water, can not change being removed of its chemical property.As used herein, " humidity " can refer to absolute humidity or (steam quality in per unit volume moisture) relative humidity ratio of the saturated vapour pressure maximum at identical temperature (actual pressure at any temperature in air with).Humidity and wetness sensor can be used for multiple use, comprise among other things, detect medicine, weather sensing and soil inspection.
VIII.A. capacitive humidity and wetness sensor
By determining how the sample (such as, air sample or solid sample) be incorporated in the dielectric gap between sensing capacitor electrode affects its electric capacity, different moisture levels and wetness sensor measure humidity or moisture.In some examples of humidity sensor, described capacitor sensor is air electric capacity, and air sample is incorporated between capacitance electrode or plate.In other embodiments of humidity sensor, the electrode of described capacitor sensor is subject to dielectric substance that humidity or moisture affects strongly as hygroscopic polymer UF membrane by dielectric constant.In certain embodiments, humidity sensor be have be arranged in interdigital or other configurations and coating by dielectric film the film humidity sensor of two electrodes, its dielectric constant also may be subject to humidity or influence of moisture.In some examples of humidity sensor, solid or fluid sample are introduced in the space between two capacitance electrodes (such as, capacitor board).Any suitable method can be used to determine absolute capacitance (or such as relative to the capacitance variations of reference value), humidity or moisture sensing capacitor (such as using an oscilator system).In some instances, differential technique can be used to the capacitance of detection.In some instances, moisture or humidity sensor can also comprise temperature-compensation circuit and/or adopt other post processing circuitry, with the impact of compensation temperature.Figure 80-L shows and is configured to use sensing capacitor 8050 to measure an example of the simplification circuit of the humidity sensor 8000 of the humidity in air sample.Circuit shown in Figure 80-L usually can be self-evident by figure, and the value of element depends on application, and therefore omit from this discussion.In capacitance humidity and wetness sensor, electrode, other circuit units (as resistance, conductive traces, potentiometer, other electric capacity, inductance, amplifier, diode, temperature-compensation circuit etc.) of sensing capacitance can all or part ofly be formed by ELR material.
VIII.B. conductivity humidity and wetness sensor
By determining how sample affects the resistance (being generally non-metal conductor) of moisture sensing conducting element, as the solid electrolyte with sulfuric acid or the polystyrene film that adopt its resistance height to depend on humidity or moisture, different moisture levels and wetness sensor measure humidity or moisture.In this transducer, any known method can be used to determine the absolute resistance (or such as relative to the resistance variations of reference value) of humidity or moisture sensing conductor.In some instances, differential technology can be used to detection resistance value.In some instances, moisture or humidity sensor can also comprise temperature-compensation circuit and/or application or other reprocessing, with the impact of compensation temperature.Figure 81 A-L and 81B-L respectively illustrates the top view and viewgraph of cross-section that are configured to measure Sample moisture or the conductivity humidity of moisture or an example of wetness sensor 8000.As shown in the figure, this transducer comprises two conductive electrode 8105a, 8105b, eachly be connected to terminal 8110A, a 8110b, with finger-like or other structural allocation in substrate 8120, and by applying or being otherwise coupled to moisture absorption conductive layer 8115, its electrical resistance humidity and/or moisture.Although shown in a planar substrate, can use the substrate (such as, probe tip) of other structure in other embodiments.In some instances, humidity sensor can be the solid-state humidity sensor of the permission hydrone infiltration using porous oxide surface or layer (such as porous alumina layer).Electrode can all or part ofly be formed by ELR material.
At soil and other solid, the aqueous components of solid may be the main contributions to its conductivity.Therefore, other examples of conductivity humidity sensor comprise soil or comprise the solid conductivity sensor being configured to the two or more electrode catheters being inserted into soil or other solid samples.By to electrode input electrical signal (such as alternating current), the conductivity of transducer determination soil or solid, thus the moisture determining this soil or solid.In other embodiment of soil or solid conductivity sensor, two or more coil can be used for the conductivity measuring solid.Such as, transducer can comprise the first transmitting coil for causing eddy current in soil or solid and the receiving coil for the fraction that intercepts secondary induction field.In such example, electrode and/or coil can be formed by ELR material.
VIII.C. other humidity and wetness sensor
Humidity and wetness sensor, it can comprise the example forming the exhaustive of assembly by ELR material at least in part and comprise following: (1) measurement gas thermal conductivity and/or utilize thermal conductivity sensor based on thermistor (temperature) sensor, and all or part of thermistor that formed by ELR material or other elements can be comprised, (2) optical thermometers of the dew point temperature of detectable gas, its surface temperature can be comprised by the speculum of fine adjustment (such as by thermoelectric heatpump) and the photodetector detecting the specularly reflected characteristic variations caused by condensed water, and/or can photoelectric detector be comprised, heat pump, LED, controller, temperature sensor, and/or other assembly to be formed by ELR material, (3) sling hygrometer of the change quality of chill plate can be detected, can partly be realized by SAW transducer, and/or comprise amber ear note cooler, radiator and piezoelectric element, (4) gravity hygrometer, its by the quality of air sample compared with equal-volume dry air, and (5) comprise the psychrometer of two thermometers.
IX radiation and particle detector
In some instances, transducer 3700 can be the transducer comprising ELR material, and be configured to provide instruction to comprise α particle, β particle, the photon of neutron and cosmic ray and ionization (such as, high-frequency ultraviolet, X ray and gamma Rays) ionising radiation existence, energy and/or other characteristic output signal.
IX.A. scintillation detector
Various scintillation detector detects or measures ionising radiation, by detecting the light launched in response to ionising radiation by scintillation material.Scintillation detector can comprise scintillation material, in response to the light that ionising radiation (crystallization (such as sodium iodide) of such as phosphorus, alkali halide, cesium iodide, organic group liquid or plastics (such as containing anthracene)), optical photons detector and/or photomultiplier or electron multiplier (such as photomultiplier or passage photoelectric multiplier, it can also comprise photocathode, bending channel structure for amplifying and anode) send fluorescence or otherwise produce.In some instances, scintillation detector also comprises: amplifier, counter circuit, and/or other post processing circuitry.In scintillation detector, optical photons detector, photoelectric multiplier or electron multiplier, amplifier, counter circuit and/or other post processing circuitry can all or part ofly be formed by ELR material.If ELR material is used to optical photon detector, even if then at ambient temperature, ELR material also can save photoelectric multiplier to photon and/or its extremely low-resistance high sensitivity and/or reduce the photomultiplier transit amount produced needed for available signal.
Various detector ionization detector or gas detector are detected or measurement ionising radiation by the generation detecting ion pair in response to ionising radiation.Figure 82-L shows ionization chamber body sensor (ionizationchambersensor) 8200.As shown, ionization chamber body sensor comprise be filled with in response to ionising radiation (such as argon gas, helium, nitrogen, methane or air) ionized gas, solid or liquid cavity 8205, with by voltage source (i.e. anode and negative electrode, such as parallel-plate structure can be set to, as coaxial cylinders, and/or otherwise) two electrodes 8215,8210 of biased opposite polarity.In some instances, chamber wall can form an electrode.The ionization current produced at electrode place in response to ionising radiation is measured by galvanometer or electrometer.In ionization chamber body sensor, electrode and/or other assemblies can be formed by ELR material in whole or in part
Other types ionization base radiation detector as known in the art or gas detector be direct ratio chamber, Geiger Muller counter and/or lead-in wire chamber such as, some of them have analog structure for ionization chamber sensor 8200, similarly can adopt all or part of electrode, lead-in wire and/or other assemblies that are formed by ELR material.
IX.C. other radiation and particle detector
The example comprising the radiation of assembly and the non exhaustive of particle sensor formed by ELR material at least partly such as comprises: (1) semiconductor or solid state radiation or particle sensor, such as (a) diamond detector, (b) silicon diode (or other diodes), comprise diffused junction diode, surface potential barrier silicon diode, ion implantation detector, epitaxial loayer detector, lithium drift pn junction detector and avalanche probe, (c) Ge detector, it all comprises and has at least two semi-conducting material (such as Si of contact (such as in parallel-plate or coaxial construction) striding across it and formed, Ge, CdTe, HGI2 or GaAs), (2) cloud chamber and foam chamber, it can comprise the coil formed by ELR material, (3) radiometer (comprises such as quartz fibre radiometer, membrane marker radiometer, thermoluminescence radiometer and solid-state (MOSFET or silicon diode) radiometer, (4) microchannel detector, (5) solid state nuclear track detector, (6) spark chamber, (7) neutron detector, (8) superconduction tunnel junctions transducer, (9) microcalorimeter.
X. hygrosensor
In some instances, transducer 3700 can be comprise ELR material and be configured to provide indicated object or material definitely or the transducer of the output signal of relative temperature (such as relative to references object).This transducer can be used as in multiple application; include but not limited to circuit protection, from time delay circuit, heating thermostat, flowmeter, level sensor, Self-resetting overcurrent protector, meteorology, climatology, electron medicine clinical thermometer, anti-magnetized coil circuit, atmosphere control system, monitoring coolant temperature or oil temperature, with for the temperature survey etc. of gas-turbine, engine, drying oven and other industrial systems and process
X.A. thermal rsistance sensors
Various temperature sensor can comprise ELR material and detect or measure definitely by detecting the sensing element resistance variations caused by temperature or relative temperature, comprise: (1) resistance temperature detector, (2) diode or junction transistors is used can be formed in silicon substrate as the pn junction detector of sensing element and/or to can be used for temperature-compensating, (3) silicon resistor positive temperature coefficient (PTC) transducer be such as attached to micro Process structure or as discrete silicon sensor encapsulation those, and it is formed by being metallized the N-shaped silicon unit also contacted on another side on side, (4) thermistor.Any or all in these temperature sensors all can comprise ELR material, such as, such as go between in temperature sensitive member and/or at conducting element, in electrode or homologue.
Those such as shown in Figure 83 A-L to 83C-L of resistance temperature detector 8300 comprise and are strongly depend on by resistance the sensing element 8305 that the metal (such as platinum or tungsten) of temperature (usually having positive temperature coefficient), alloy or other conductions or semiconductive material (such as germanium) formed, and arranged thereon, be accommodated therein or supported by supporting construction 8310 in addition.Such as, as shown in Figure 83 A-L, sensing element 8305a can be to wriggle or the film of other vibrational power flow on planar substrates (such as silicon fiml) or other supporting construction 8310a.As another example, as shown in Figure 83 B-L, sensing element 8305b can be the lead-in wire be wrapped in around supporting construction 8310b (such as glass core) and/or the glass with molten homogeneous around it.As an example again, as shown in the sectional view of Figure 83 C-L, sensing element 8305c can be the lead-in wire being formed loop construction, and its shape keeps (being such as the seal casinghousing being filled with inert gas or ceramic cylinder) by supporting construction 8310c.Sensing element 8305 can be coupled to one or more lead-in wire, such as by silicon rubber, PTEE insulator, glass fibre or ceramic lead-in wire of isolating.This sensing element 8305 can connect by any suitable construction line, comprises such as two lead-in wires, three lead-in wires or four pin configurations (comprising such as four lead-in wire Kelvin to connect).And although Figure 83 A-L to 83B-L is not shown, detector 8300 can comprise case, housing or other protection components (such as coating).Other examples of resistance temperature detector comprise carbon detector.In some instances, replace the sensing element formed by conventional conductive metal, alloy or other materials, ohmmeter due to ELR material reveals strong temperature-independent, and therefore instead, sensing element can be formed by ELR material (such as ELR nano wire, ELR film etc.) in whole or in part.And other assemblies (such as contact, lead-in wire etc.) of resistance temperature detector can be formed by ELR material.
Thermistor comprises by the sensing element having the dependent resistance material of high temperature and formed, such as metal oxide, silicon or germanium, and can have add-on assemble such as contact and plumbous lead-in wire.Sensing element can be formed drop, cross bar, cylinder, rectangular tab, chip and thick film.Thermistor comprise polymer PTC thermistor, pearl type (bead-type) thermistor (such as light, apply by glass epoxy resin or encapsulation); The chip thermistor that surface contact goes between for lead can be had; By the thermistor that deposited semiconductor material on silicon, glass, aluminium oxide or other types substrate manufactures; With the thermistor (such as there is the thermistor of the thermistor ink be printed on ceramic substrate) of printing, and semistor (such as there is the thermistor of Ceramic PTC materials).As is understood, other thermistors various can use ELR material such as sensing element and/or in contact and/or lead-in wire.
X.B. other hygrosensors
The example that can comprise the temperature sensor of the assembly formed by ELR material at least partly non exhaustive comprises: (1) thermocouple and thermoelectric pile, it can comprise sensing element assembly or have the knot of lead-in wire that is exposed or that insulate or film, terminal, protection tube, and/or thermocouple, comprise the film thermocouple of the bonding junction with paper tinsel, and arranged in any way as suitable, such as, do not have filamented form or matrix form; (2) optic temperature sensor, such as uses the fluorescent optical sensor of phosphorus compound; (3) infrared light transducer[sensor; (4) interference sensor; (5) hot chromium solution transducer; (6) sound temperature sensor (comprising SAW peace ripple temperature sensor); (7) bimetallic strip transducer; (8) coulomb blockade temperature sensor; (9) silicon band gap temperature sensor; (10) temperature sensor in calorimeter is used in; (11) piezoelectric temperature transducer, (12) EGT meter, (13) Gardon counts, (14) heat flux sensor, (15) microwave radiometer and (16) net radiation meter.
XI. chemical sensor
In some instances, transducer 3700 can comprise ELR material and can be configured to provide represent one or more target chemical substances existence, quantity, concentration or other characteristics the ELR material of output signal.The detection that this transducer can be used for oxygen monitoring, gas extraction system, glucose monitor, carbon dioxide monitoring, analytical equipment, monitoring industrial treatment, quality control, the environmental monitoring of workman, the detection of explosive or VOC, Electronic Nose, the medical monitoring of oxygen or search gas content, respirometer, war medium detect, environment pollution detection or hydrocarbon fuel leak.
XI.A. electronics and electrochemical sensor
The various electrical effect of chemical sensor determination analyte to material and/or the electrical characteristics of analyte, such as metal oxide semiconductor sensor, electrochemical sensor, potentiometric sensor, conductivity sensor, current sensor, elasticity chemical resistance, chemical electric capacity and chemical FETS, some of them are further describing at this.Various electronics or electrochemical sensor can utilize the assembly formed by ELR material.
XI.B. metal-oxide semiconductor (MOS) chemical sensor
Various metal-oxide semiconductor (MOS) chemical sensor such as by detecting the semiconductor inductive layer resistance variations that targeted species change in concentration causes, can detect the existence of one or more targeted species (such as oxidisable gas), type, concentration or other characteristic.Usually, metal-oxide semiconductor (MOS) chemical sensor comprises semiconductor inductive layer, electric contact, and lead-in wire and/or other electrical connections, to determine a layer resistance, with for temperature controlled heating element (such as thermal resistance).In some instances, transducer can be formed in single chip integrated sensor array, and it comprises control system and data acquisition component on chip.Figure 84-L shows SnO 2an examples of circuits of metal-oxide semiconductor (MOS) chemical sensor 8400.Therefore circuit shown in Figure 84-L, and to be omitted normally from illustrative and components values depends on application according to this figure from this discussion.Figure 84-L shows semiconductor inductive layer (8405) and can be attached in Gordon Adams Bridge circuit or in other bridge constructions, such as, in conjunction with thermistor 8410 or other heating elements.The non exhaustive example of spendable semiconductor layer comprises: SnO 2, the thin or thick film of tin oxide (comprise pure film, film doped with Pt or Pd, and be formed in the film on silicon device), titanium dioxide, doping rhodium TiO 2, and ZnO.The non exhaustive example of the targeted species that can be detected comprises oxygen, carbon monoxide, hydrogen, methane and other hydrocarbons.In any one metal-oxide semiconductor (MOS) chemical sensor, the some or all of assemblies comprising inductive layer, electric contact, lead-in wire, heater and/or other assemblies (such as resistance, amplifier or other interface assemblies) can all or part ofly be formed by ELR material.
XI.C. electrochemical sensor
Figure 85-L shows the schematic diagram of the example of electrochemical sensor 8500, it is such as potentiometric sensor (is such as such as due to redox reaction, the transducer of measuring voltage), current sensor (such as measuring the transducer of electric current) and/or conductivity sensor (such as measuring the transducer of conductivity, resistivity and/or condensance), or other suitable electrochemical cell.As shown, electrochemical sensor comprises two or more electrode, and it can comprise indicator electrode, corrects the reference electrode 8510 of the electrochemical potential produced by electrode and electrolyte, the work electrode 8515 of chemical reaction and auxiliary electrode 8520 occur.This electrode part or all enter into electrolyte solution 8525, it can have the analyte be dissolved in wherein, and is such as coupled to electric control and/or measurement components (such as pressurizer, bistable depressor, poly-pressurizer, ampere device, electrometer or electrochemistry device) via lead-in wire.In some instances, one or more electrode and/or lead-in wire can be formed by platinum, palladium, carbon coating measurement and/or ELR, and are formed as thin or thick film form, and/or can be processed to improve its reaction speed/life-span.In some instances, transducer can comprise other assemblies such as film such as ion-selective membrane or oxygen permeable membrane (or special teflon).Wherein, the example of this transducer comprises pH meter and Clark lambda sensor (such as it can be used for glucose monitor).
XI.D. other chemical probes
The each example comprising the chemical sensor of the assembly formed by ELR material at least partly comprises (1) elasticity chemiresistor or conducting polymer compound, its suction-operated due to concrete chemical object causes it to expand and deposits the resistance (in some examples, this chemiresistor can be formed as film) demonstrating change (namely increasing) in case thus at chemical object; (2) chemical capacitance sensor, it has the capacity cell (such as two interdigital or the parallel electrode that are separated by the medium (such as water-sensitive polymer) absorbing concrete chemical object, or two parallel-plates), capacity cell is made to demonstrate the electric capacity (in some instances, this chemoresistive sensors can be formed as film or MEMS structure) of change when there is chemical object; (3) chemical FET (comprises ISFET, MEMFET, SURFET and NEFETS), it comprises field-effect transistor (FET), its grid is replaced by one or more layers chemical-sensitive material and/or is applied (such as gas sensitization film by it, ion-selective membrane or enzyme membrane), the FET when targeted species such as object gas, object ion or the target enzyme selected by existing differently is responded (such as having different conductance); (4) photoionization detector, its small area analysis using high energy UV light to be produced by ionization with measurement with ionized molecule and electrometer; (5) acoustic wave device (comprising quartz crystal or other micro-balance sensors, SAW transducer, sound plate mode transducer and flexible board pulsation sensors and distortion thereof), other quality or weight sensor and micro-cantilever, it all can detect the change being changed the mechanical property of the structure caused by quality or surface stress, and this quality or surface stress change select the absorption of the target molecule in layer to cause by such as chemistry on this body structure surface; (6) ion mobility, it can use electric deflection field to be separated the ion with different ions mobility; (7) heat chemistry transducer, its use is coated with the temperature sensor (such as thermistor) that chemical-sensitive material is such as fixed on the enzyme in matrix, to detect the heat being produced by the chemical reaction in coating or absorbed; (8) catalytic combustion and other catalytic sensors of fuel gas can be detected; (9) spectroscopy system, comprise infrared and UV spectroscopy system, comprise on-dispersive IR system, (10) fiberoptics transducer, it can comprise light source, photo-detector, with comprise reactant, membrane phase or or experience the optoelectronic pole (optrode) of indicator (indicator) of changes in optical properties when there is analyte, this optical characteristics is by reflection, absorption, surface plasmon resonance, luminescence (fluorescence and phosphorescence), chemiluminescence or evanescent wave technology; (11) dual sensor of organic substance, barrier film, tissue (tissue), cell, organelle, nucleic acid, enzyme, acceptor, protein and/or antibody is detected; (12) transducer (such as heat, electrochemistry or optics) of enzyme layer is comprised; (13) piezoelectric device; (14) chemical sensor that can arrange and dual sensor; (15) Electronic Nose and tongue (i.e. sense of smell and taste sensor); (16) respirometer; (17) carbon dioxide sensor; (18) carbon monoxide detector; (19) the spider transducer (catalyticbeadsensors) of catalysis; (20) electrolyte-insulator-semiconductor transducer; (21) hydrogen sensor; (22) hydrogen sulfide sensor; (23) infrared point transducer; (24) microwave chemical sensor reagent; (25) nitrogen oxide transducer; (26) olfactometer; (27) catalytic combustion sensor (pellistor); (28) Zinc oxide nano-rod transducer; (29) core level Four (nuclearquadrupole) resonance (NQR) transducer; (30) ion-channel switch transducer; (31) piezoelectric transducer; (32) temperature measurement transducer, and (33) and Magnetic Sensor;
XII. optical sensor
In some instances, transducer 3700 can be the optical sensor comprising ELR material and be configured to the output signal of the light signal provided measured by expression.This transducer can be used for multiple application, includes but not limited to mobile device, camera, camcorder, portable computer such as handwritten computer, mobile phone, medical diagnosis instrument, medical imaging, core and particle physics, astronomy, line tomography and image analyzer.
XII.A. photocathode, photoelectric tube and photoelectric multiplier
Various optical sensor can comprise ELR material and is namely coated with the electronegative electrode detection of light-sensitive compound by use photocathode or measures light.These optical sensors comprise photoelectric tube and photoelectric multiplier, such as, comprise passage photoelectric multiplier (channelphotomultiplier).In this example, electrode, dynode or other assemblies can be formed by ELR material in whole or in part.
XII.B. quantum optical sensor
Various quantum optical sensor can comprise ELR material and by via photoelectric effect the light signal of input being directly changed into electrical signal detection or measuring light, comprise the photodiode that (1) has PN or PIN structural, comprise avalanche photodide, and it can be integrally formed with current-voltage converter; (2) optotransistor, it amplifies photodiode current by current gain; (3) photoresistor, it such as can be formed by CdSm, CdSe, Si, Ge, PbS, InSb, and due to photoelectric effect cause its can have about incident light change resistance; (4) cooled quantum optical sensor, such as, with the quantum optical sensor of Dewar bottle by the cooling of dry ice, liquid helium, liquid nitrogen or thermoelectric (al) cooler; (5) one dimension of photodiode or two-dimensional array are used for imaging (and/or the array of other quantum optical sensors, such as optotransistor or photoresistor), such as charge coupled device (CCD) transducer (comprises frame and transmits ccd sensor, the ccd sensor of electron multiplication ccd sensor and reinforcement) and compensate metal-oxide semiconductor (MOS) (CMOS) imageing sensor or active picture element image sensor, each pixel comprises photo-detector and activated amplifier here.In these optical sensors any one or allly such as such as to interconnect at conducting element, ground level and grid comprise ELR material.
XII.C. thermo-optical transducer
Various thermo-optical transducer can comprise ELR material and detects or measure thermal radiation, comprises (1) Golay unit or hot blast detector, comprises micro-machined Golay unit; (2) thermocouple or thermopile IR detector (as described in addition at this) such as bismuth, antimony, silicon and MEMS thermoelectric pile (comprise and be arranged to the multiple thermopile sensors of array for thermal imaging); (3) pyroelectricity transducer, it can comprise pyroelectricity ceramic wafer or element and two or more electrode; (4) active far-infrared sensor, (5) hot electron photodetector, and (6) gas flame detector.Any or all in these photoelectric sensors such as comprises ELR material at temperature-sensing element and/or conducting element such as lead-out wire, electrode or homologue.
XII.D. bolograph
Figure 86 A-L shows the schematic diagram of the example of bolograph 8600A.As shown, bolograph can use and be configured to absorb infrared or other electromagnetic radiation and the absorption component 8605A (such as thin foil, metal film or the film, paper tinsel or the lead-in wire that are formed by ELR material) converting thereof into heat, with all those temperature sensors 8625A as described in this, increase with the temperature detecting acquisition.Figure 86 B-L shows serviceability temperature inductive reactance as two absorption component 8605B provides resistance and temperature to respond to the example of bolograph of (such as resistance temperature detector described here), can use reference resistance 8610 or arbitrarily other resistance inducing methods (such as fibreoptics) measure its resistance changed.Absorption component can be formed by thin foil, metal film or ELR material, such as, comprise platinum, polysilicon, germanium, TaNO and ELR film, lead-in wire or paper tinsel.In some instances, the array of calorimetric radiation gauge can be used, such as, for IR imaging applications.In an example again, film or paper tinsel calorimetric radiation gauge can be formed on silicon or glass-film, and this film can be supported by silicon and make its " floating " on micro Process chamber.
XII.E. other optical sensors
The each example comprising the optical sensor of the assembly formed by ELR material at least partly comprises (1) colorimeter; (2) contact image sensor; (3) LED is as optical sensor; (4) Nichols radiometer; (6) fiber optic sensor; (7) photoionization detector; (8) light-operated switch; (9) Shack-Hartmann transducer; (10) Wavefront sensor (wavefrontsensor).
XIII. dust, smog and other particle sensors
In other examples, transducer 3700 can be the transducer comprising ELR material, and it is configured to provide the output signal representing airborne particle such as smog, dust or other impurity particles.In some instances, transducer can be optical smoke or dust detector, and it uses photoelectric sensor (such as, photodiode or phototransistor) and interface circuit to measure the dispersion of the light produced by optical transmitting set such as LED.In such examples, photoelectric sensor, optical transmitting set and/or other assemblies can comprise ELR material.
XIII.A. ionization, dust, impurity and Smoke Sensor
Various ionization sensor reduces detection smoke particle by monitoring the air ionization caused by ionized particles.This ionization sensor can comprise the ionization chamber that (1) is formed by two comparative electrodes (such as parallel-plate electrode or coaxial cylinders electrode) with the electric field put on therebetween, and (2) in the chamber producing Alpha's particle or other ionising radiations or near a small amount of radioelement (such as americium-241).This transducer detects smog or other types particle by the reduction detecting air ionization, and this air ionization reduces the electric current showing himself to stride across two electrodes and reduces.The electrode of ionization transducer and/or other assemblies can be formed by ELR material in whole or in part.
XIV. electricity and electromagnetic sensor
In some instances, transducer 3700 can be the transducer comprising ELR material, and it is configured to provide the output signal of electromagnetic property representing electricity, magnetic or electromagnetic signal and/or circuit, material, medium or object.The non exhaustive example of this transducer comprises: (1) ammeter or circuit sensor (such as galvanometer, D ' Arsonval galvanometer, soft iron ammeter, electronic movement (electrodynamicmovement) ammeter, hot line (hot-wire) ammeter, digital electric meter, integrated electricity meter, miliammeter, microammeter and micromicro ammeter), (2) voltage sensor or voltmeter (such as analog voltage table, amplify voltmeter, digital voltmeter, valve voltmeter, AC voltmeter and field-effect transistor voltmeter); (3) oscilloscope; (4) reactance and susceptance transducer (such as ohmmeter); (5) magnetic flux transducer; (6) magnetic field sensor or magnetometer (such as magnetic gate, superconducting quantum interference device (SQUID), atom rotate and exchange without relaxation (atomicspin-exchangerelaxation-free), revolving coil, Hall effect (described here), proton precession), the magnetometer using Joseph's knot, differential manometer (gradiometer) and optics pumping caesium steam magnetometer; (7) electric-field sensor; (8) watt transducer; (9) s-matrix table (such as network analyser); (10) electrical power wave spectrum transducer (such as Spectrum Analysis device); (11) resistance and conductivity sensor (such as ohmmeter); (12) universal instrument; (13) metal detector; (14) leaf electroscope (leafelectroscope); (15) the abnormal detector of magnetic; (16) phase place or phase displacement sensor; (17) ohmmeter; (18) radio directional finer; (19) watt-hour table (watt-hourmeter); (20) inductance sensor; (21) capacitance sensor; (22) reactance transducer; (23) factor of quality transducer; (24) electron waves spectrum density transducer; (25) electronic phase angle sensor noise; (26) electronics amplitude noise transducer; (27) mutual conductance transducer; (28) transimpedance transducer; (29) electrical power gain sensor; (30) voltage gain transducer; (31) current gain transducer; (32) frequency sensor; (33) charge sensor (such as electrometer such as vibrating, valve or solid-state electrometer); (33) duty cyclometer; (34) decibelmeter; (35) diode and transistor characterize transducer (such as measuring pressure drop, current gain or other diode/transistor parameters).
XV. other transducers
Can comprise the example at least partly measuring other transducers of the assembly formed non exhaustive by ELR comprises as follows: bed-wetting alarm, dewdrop advance notice alarm, fish counter, hook gauge evaporometer, pyranometer, Pyrgeometer, rain gauge, rain sensor, snowfall measuring appliance, flow measuring probe, tide gauge, air fuel ratio meter, bend sensor (cranksensor), constraint experimental probe (curbfeeler), defect detector, ECTS, manifold absolute pressure (MAP) transducer, radar for backing car, radar meter, tachymeter, throttle position sensor, tire pressure monitoring sensor, transmission oil liquid temp transducer, turbine speed sensor, vehicle speed sensor, wheel speed sensors, air velocity indicator, altimeter, attitude indicating device, depth gauge, inertial reference unit, magnetic compass, MHD transducer, ring laser gyroscope, rotation coordinated person, air gauge, vibrational structure gyroscope, and Yaw rate sensor.
There is other transducers of ELR assembly or suitable execution mode
As mentioned above, by adopting ELR material in these kind of transducer, under condition of similarity, transducer can provide the order of magnitude lower than the resistance of best normal conductor, thus cause especially high sensor performance and, less and compacter form can manufacture this transducer.
In fact, use film fabrication techniques can manufacture a lot of transducer, wherein much all this has been description, and all the other semiconductor chip manufactures are shared.Single layer device can be manufactured by adopting a lot of transducers of ELR material, and be simplified as generation of the processing step of these kind of transducer thus and only comprise: photoetching, ion grinding, contact metallization and section (or its equivalent).In fact, due to ELR material produce or required path width be greater than current state prior art semiconductor fabrication use most of width, therefore, existing manufacturing technology is completely enough.But manufacture chip by some in minimum level manufacturing technology, it leaves greater room for other transducers or other circuit on chip.By more packing, circuit designers has the less restriction based on layout or distance problem, and except other benefits, this can allow chip design faster.
Transducers more described here can single-chip integration on a single chip (such as, MEMS, silicon or other semiconductor chips), there are other assemblies such as logic, RF assembly, analog circuit etc. usually.By adopting sensor-on-chip, chip obviously benefits from augmented performance.Except other benefits, by adopting ELR material in chip, chip can enjoy larger current densities.Such as, by adopting ELR material, chip enjoys less thermal losses, and due to every bar line can transmit more multiple current, therefore can adopt thinner conductor wire.By transmitting less electric current on each line, can be reduced in adjacent lines, EMF effect on transducer and other circuit.Be not line, also can be interconnected by the manufacture of ELR material.And, due to line loss consumption significantly reduce, therefore can without amplification signal transmission.And due to the pole low resistance of ELR material, what the distance between the transducer of interconnection or sensor cluster can be made especially grows (such as a few km), considers resistance loss hardly.Thus, also can than induction system that current attainable longer distance distributes.
In some instances, transducer can be included in the ELR material of the vicissitudinous operating characteristic of tool within the scope of designed senor operating temperature.Assuming that determine the respondent behavior of transducer (with ELR material), then can compensate the behavior within the scope of sensor temperature, as understand.
With reference to figure 88-L, show the example (although each chunk interconnection shown in Figure 88-L, less connection is also fine) that system 8800 comprises the circuit 8810 and logic 8820 being coupled to temperature-control circuit 8815.Circuit 8810 adopts the one or more transducers formed by ELR material at least partly described here.Logic control temperature-control circuit, temperature-control circuit is the low temperature of controlled cooling model device/freezer unit such as cooling circuit 8810 or liquefied gas cooler then.Thus, in order to increase or the susceptibility of reduction system 8800 or response, logic 8820 transmits signals to temperature-control circuit 8815 to reduce or to increase the temperature of circuit 8810.As a result, adopt the circuit 8810 of ELR material to cause increase or the reduction of ELR material electric conductivity, thus increase or reduce circuit sensitivity or response.
Although show single-sensor, transducer can combine to form transducer group, multiplexer or other more complicated sensing system, network or array.About other types transducer discussed herein, the various structure sensor arrays of ELR material are adopted all to be fine and to depend on designed sensor array or the type of multisensor syste.ELR material described here can be used in the sophisticated sensors system of combination of two or more transducer and the principle comprised, even without clearly describing these combinations.In some instances, sophisticated sensors system can adopt two or more dissmilarity or Dissimilar sensors, instead of simply similar or same type of sensor.In some instances, sensing system or array can comprise the relative same type of sensor all formed by ELR material, or the heterogeneous mixture of the dissimilar sensor formed by non-ELR material, or different sensors and combination of different materials.In some instances, sophisticated sensors system or array can adopt two or more transducer, its by two or more same type of sensor of being formed primarily of ELR material, the two or more Dissimilar sensors formed primarily of ELR material and/or by conventional conductor and ELR material formed two or more similar/Dissimilar sensors formed.
Although there is described herein the concrete example of the transducer adopting the assembly partly or entirely formed by ELR material, but it will be appreciated by those skilled in the art that, various sensor construction all can adopt ELR material, such as those assemblies listed above, such as, for conduction current, Received signal strength or transmission or change electromagnetic signal.
Although for some transducers, at this illustrate, describe some suitable geometries, interconnection, circuit and structure, name is planted other geometries, interconnection, circuit and structure and is also fine, as understand.The those skilled in the art providing each example of ELR material, transducer and the principle in the application, when not carrying out undue experimentation, can implement one or more component integration or other transducers of being formed by ELR material of part.
In some embodiments, the transducer comprising modification ELR material is described below:
A kind of transducer, comprise: at least one transducer, it comprises and to be formed by modification pole low resistance (ELR) material or at least partly in conjunction with the assembly of this material, wherein transducer is responded to situation and is produced output, and wherein ELR material is formed by ELR film, this ELR film has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
A kind of for the position of induction substance or the equipment of displacement, comprise: converter system, its machinery or be electrically configured to position or the displacement of induction substance, wherein converter system comprises and to be formed by modification pole low resistance (ELR) material or at least partly in conjunction with the conductive component of this material, wherein converter system produces induction output signal in response to the position of material or displacement, wherein modification ELR material is formed by modification ELR part, and this ELR part has the ground floor that comprises ELR material and comprises the material modified Part II being bonded to ground floor ELR material.
A kind of equipment for induced liquid liquid level, comprise: converter system, its machinery or electrically pond coupling are with induced liquid liquid level, and comprise and to be formed by modification pole low resistance (ELR) material or at least partly in conjunction with the assembly of this material, wherein this converter system produces variableimpedance in response to liquid levels, wherein modification ELR material is formed by modification ELR film, and this ELR film has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
A kind of for responding to object, the equipment of the position of liquid or material, this equipment comprises: mechanical couplings is to respond to object by means of movable part, the potentiometric sensor of the position of liquid or material, wherein potentiometric sensor comprises and to be formed by modification pole low resistance (ELR) material or at least partly in conjunction with the assembly of this material, wherein potentiometric sensor in response to movable part relative to object, the Mechanical Moving of liquid or material produces variableimpedance, wherein modification ELR material is formed by modification ELR part, this ELR part has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
For responding to a transducer for object's position, this transducer comprises: at least one movable assembly, and it is configured to relative to a part for object or in response to the contact displacement with object; And transducer, it is formed on movable assembly or is coupled to it, and comprise and to be formed by modification pole low resistance (ELR) material or at least partly in conjunction with the capacitance sensor of this material, wherein this capacitance sensor produces variableimpedance in response to object relative to the displacement of movable assembly, wherein modification ELR material is formed by modification ELR film, and this ELR film has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
A kind of inductance sensor, comprising: at least one coil; And magnetic field sources; Wherein at least one coil makes inductance of inducting alternately betwixt together with magnetic field sources inductance coupling high; Wherein at least one coil, magnetic field sources or both formed by modification pole low resistance (ELR) nano wire at least partly, wherein modification ELR nano wire is formed by modification ELR film, and this ELR film has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
A kind of hall effect sensor, comprising: be configured at least one current-carrying part transmitting electric current; And magnetic field sources; Wherein arrange magnetic field sources to cause the induced signal of the potential change representing crosscut electric current relative at least one current-carrying part; Wherein at least one current-carrying part, magnetic field sources or both at least partly by modification pole low resistance (ELR) be with or nano wire formed, wherein modification ELR is with or nano wire is formed by modification ELR film, and this ELR film has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
A kind of for responding to taking or the transducer of movement of object, this transducer comprises: transducer, be included in the conductive surface near induction zone and combine modification pole low resistance (ELR) material at least partly, the wherein object reception friction electric field of transducer in this region or the induction capacitance variations relevant to object in this region, and produce induced signal in response to this, wherein modification ELR material is formed by modification ELR film, and this ELR film has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
A kind of velocity transducer, comprising: at least two coils; With can relative to the magnetic field sources of these two coil movements; Wherein this coil is together with magnetic field sources inductance coupling high, makes magnetic field sources cause corresponding output signal relative to the speed of coil; Wherein two coils, magnetic field sources or both formed by modification pole low resistance (ELR) nano wire at least partly, wherein modification ELR nano wire is formed by modification ELR film, and this ELR film has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
For responding to an equipment for power on object or stress, this equipment comprises: converter system, comprising: be mechanically configured to respond to the power on object of being applied to or stress and the first transducer exported in the middle of producing; Be electrically configured to receive this centre and exported and the second transducer producing the induced signal representing the power that applies on object or stress in response to this, wherein the first and/or second transducer comprises and to be formed by modification pole low resistance (ELR) material or at least partly in conjunction with the conductive component of this material, wherein modification ELR material is formed by modification ELR part, and this ELR part has the ground floor that comprises ELR material and comprises the material modified Part II being bonded to ground floor ELR material.
For responding to a touch sensor for contact force, this transducer comprises: be configured at least one the movable assembly in response to contact force displacement; And transducer, to be formed on movable assembly or selectively coupled with it and comprise and to be formed by modification pole low resistance (ELR) material or at least partly in conjunction with the transducer of this material, wherein this transducer is in response to from stable state or give tacit consent to the different contact force of impedance and produce impedance, wherein modification ELR material is formed by modification ELR film, and this ELR film has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
A kind of pressure sensor, comprising: to be maintained in a certain structure and to be configured in response to the fluid pressure acted on movable assembly and at least one movable assembly of displacement; And transducer, to be formed on movable assembly or selectively coupled with it, comprise and to be formed by modification pole low resistance (ELR) material or at least partly in conjunction with the pressure sensor of this material, wherein this transducer produces impedance in response to pressure, wherein produced impedance and stable state or to give tacit consent to impedance different, wherein modification ELR material is formed by modification ELR film, and this ELR film has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
A kind of acceleration transducer, comprising: at least two coils; With relative to these two moveable magnetic field sources of coil; Its coil, together with magnetic field sources inductance coupling high, makes magnetic field sources cause corresponding output signal relative to the acceleration of coil; Wherein two coils, magnetic field sources or both formed by modification pole low resistance (ELR) nano wire at least partly, wherein modification ELR nano wire is formed by modification ELR film, and this ELR film has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
For an equipment for induced liquid flowing, comprising: at least one movable parts, it is maintained at liquid via in its a certain structure flowed, and the fluid pressure be configured in response to acting on movable parts and displacement; And transducer, it to be formed on movable parts or selectively coupled with it, comprise and to be formed by modification pole low resistance (ELR) material or at least partly in conjunction with the transducer of this material, wherein this transducer is in response to producing property of flowing variableimpedance, wherein modification ELR material is formed by modification ELR film, and this ELR film has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
A kind of equipment, comprising: the first conductive path transmitting electric current; Sound transducer; Wherein the first conductive path and/or transducer comprise the Part I with pole low resistance (ELR) material and the Part II being bonded to described Part I, which reduce the resistance of ELR material; Wherein cause relative to the voice signal of the first conductive path or transducer the induced signal representing transforming impedance in transducer.
A kind of humidity or wetness sensor assembly, comprise: the conductive path forming a pair interval on a surface, comprise the conducting element at least partially for sensor cluster, wherein at least one conductive path comprises the first material, this first material is by comprising the Part I of ELR material and comprising chemical bonding to the material modified Part II of Part I ELR material and is formed, and the different impedances wherein between the moisture of the Contact of conductive path or humidity initiation conductive path are as sensor output signal.
A kind of radiation or particle sensor, this transducer comprises: at least one scintillation material, and it is configured to receive incident radiation or molecule and produces light in response to this; With at least one photosensitive components, it arranges relative to scintillation material and is configured to produce output signal in response to produced light; With at least one conductive component forming lead-out terminal, wherein photosensitive components and/or conductive component are formed by modification pole low resistance (ELR) material in whole or in part, wherein modification ELR material is formed by modification ELR film, and this ELR film has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
A kind of equipment for temperature sensor, comprise: transducer, it is configured to temperature sensor, and comprise and to be formed by modification pole low resistance (ELR) material or at least partly in conjunction with at least one conductive component of this material, wherein this sensing system produces variableimpedance in response to temperature, wherein modification ELR material is formed by modification ELR film, and this ELR film has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
A kind of chemical sensor assembly, comprise: the conductive path forming a pair interval formed on a surface, comprise the conducting element at least partially for chemical sensor assembly, wherein at least one conductive path comprises the first material, this first material is formed by the Part I comprising ELR material and the material modified Part II that comprises the ELR material being bonded to Part I, and the chemical substance of the wherein Contact of conductive path causes different impedances or electroresponse as corresponding output signal between conductive path.
For responding to an optical sensor for received light signal, this transducer comprises: be configured to receiving optical signals and produce at least one photosensitive components outputed signal in response to light; With at least one conductive component forming lead-out terminal, wherein photosensitive components and/or conductive component are formed by modification pole low resistance (ELR) material in whole or in part, wherein modification ELR material is formed by modification ELR film, and this ELR film has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
A kind of electric current, voltage or electric-field sensor, comprising: at least one current-carrying part being configured to loaded current; And magnetic field sources; Wherein relative at least one current-carrying part orientation magnetic field source to cause the induced signal of electric current, voltage or electric field representing and respond to; Wherein at least one current-carrying part, magnetic field or both at least partly by modification pole low resistance (ELR) be with or nano wire formed, wherein modification ELR is with or nano wire is formed by modification ELR film, and this ELR film has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
A kind of system, comprising: the array of multiple sensor element, wherein each sensor element comprises-is formed or is coupled to one or more conducting elements of transducer; One of them or many conducting elements comprise the first material at least partially, this first material is by comprising the Part I of ELR material and comprising chemical bonding to the material modified Part II of Part I ELR material and formed, and each in wherein one or more sensor elements provides sensor output signal.
A kind of system, comprising: logic OR analog circuit; With at least one sensor element being coupled to this logic OR analog circuit, wherein this sensor element comprises-one or more conducting element, wherein one or more conducting elements comprise the geometry of quantity, characteristic or the output with conditions induced signal being formed to stimulate in response to responded to external reception, with comprise electric conducting material at least partially in wherein one or more conducting elements, this electric conducting material is by comprising the Part I of ELR material and comprising the material modified Part II being bonded to Part I ELR material and formed.
The actuator of the 12nd chapter-formed by ELR material
These chapters and sections of this specification relate to Fig. 1-36 and Figure 37-M to Figure 50-M; Therefore, all reference numbers that this part comprises all relate to the element occurred in these figure
There is described herein all kinds actuator adopting pole low resistance (ELR) material.For type actuator more described below, comprise at least one converter and formed by modification ELR material with at least one conductor (such as input and/or output lead or terminal) actuator.For some other types actuators, film, band, paper tinsel, lead-in wire, nano wire, trace or other conductors can be formed or be positioned on substrate, film, band, paper tinsel, lead-in wire, nano wire, trace or other conductors adopt modification ELR material here.Can construct other types actuator, the actuator of himself or some assembly of transducer adopt modification ELR material here.
More specifically will be described in actuator now and use ELR material.Generally, the actuator of a lot of structure is all fine, and is the design consideration that designer implements to be formed by modification ELR material or be connected to its actuator.In fact, the principle controlling traditional actuators design can be used for producing the actuator adopting modification ELR material described here.Thus, although illustrate and there is described herein the geometry of some actuators, much other structures are also fine certainly.And highlight particular actuators system and how to use although describe at this specific components formed by modification ELR material, these examples of modification ELR assembly mean schematic and non exhaustive.The those skilled in the art providing each example of the present disclosure can be identified in other assemblies in the same or similar actuator system that formed by modification ELR material.
By in actuator or central employing modification ELR material, can realize the actuator of approximate ideal, this can provide excellent efficiency.If manufactured by tradition; then the resistance of conductor wire or element internal can affect actuator performance usually; if but by using the ELR band of employing modification ELR material, ELR film, ELR paper tinsel, ELR lead-in wire, ELR trace, ELR nano wire and/or other ELR conductors to manufacture this line, then this resistance can be ignored.Similarly, by adopting the various structures of ELR material, the resistance such as caused by line or coil in the inductor can be ignored.
In some instances, at the temperature between the transition temperature and room temperature of traditional HTS material, adopt any one actuator described here of modification ELR material can provide pole low resistance for electric current.In some instances, at the temperature being greater than 150K or at other temperature described here, adopt any one actuator described here of modification ELR material can provide pole low resistance for electric current.In these examples, actuator can comprise for cooling the cooling system (not shown) of actuator component to the critical temperature of concrete modification ELR material.Such as, cooling system can be can to the ELR material cooled in major general's actuator to such as similar to liquid fluorine Leon temperature or to other temperature discussed herein.That is, can based on the type of the modification ELR material utilized in actuator and structure and the application choice cooling system being applied to it.
With reference to figure 37-M, show the basic example of actuator 3700.Actuator 3700 comprises at least one converter 3705 or controller 3710 of receiving input signal.Actuator 3700 also can comprise other transducers 3715 one or more of the output being received from last transducer.Converter 3705 (or last transducer 3715) generation output energy or power 3720 are with moving target or produce some physical result in addition.
Actuator can comprise the feedback 3725 that feeds back to controller 3710 with modulation or the input signal that controls to converter 3705.Although show feedback 3725, can feedforward system be adopted, at each transducer of feedforward system, a rear converter be provided to the information relating to this converter and export.No matter be feed back or feedover or both have, actuator system can comprise one or more transducer thus send such as displacement, movement or its dependent variable useful when controlling actuator.
Generally, actuator 3700 controls material (or energy) flowing, and converter 3705 is energy controller or energy converter thus, is subject to the control of controller 3710.As said, multiple actuator or actuator system are all fine, and comprise electromagnetic actuators (such as having the engine of mechanical/electrical adapter), hydrodynamic actuator (such as proportioning valve, switch valve, hydrodynamic engine), electrochemistry actuator (such as wax or metal hydride actuator), shape store alloy actuator, piezo-activator, magnetic deformation actuator, the actuator of employing ER effect/magnetic rheological liquid and micro-actuator.
Before explanation actuator system details, some application providing actuator system within a context will be described.Figure 38-M shows and adopts the equipment of actuator 3700 and the example of system 3750.This system 3750 receives (or sending) signal 3760 via terminal or other I/O assemblies.This system can comprise actuator 3700, logic and/or analog circuit 3765, power supply 3775 and/or I/O (I/O) assembly 3770, its any one all can be included in housing 3755 or in addition and assemble as a unit.This system 3750 also can comprise other actuators 3780 one or more.
This system 3750 can adopt the one in various ways.In one example, this equipment is kneetop computer, panel computer or other portable electric appts, such as has the equipment of hard disk drive.Under this example, power supply 3775 can be battery, and actuator system 3700 can form disk drive read/write head motor or spindle motor circuit.Logic 3765 can comprise processor and memory, and I/O3770 can comprise keyboard or keypad, indicating equipment, display device, microphone, loudspeaker, button, accelerometer or other well known elements simultaneously.Other well known elements a lot of in this example of portable electric appts are also fine certainly, but are not therefore illustrated owing to one of ordinary skill in the art will readily recognize that.
In another example, system 3750 is that cellular telephone receiver/transmitter/transceiver is for cellular basestation.In this example, power supply 3775 can be the line power being derived from public electric wire net, stand-by generator (backupgenerator), battery, solar cell etc.In this example, logical block 3765 can comprise the RF circuit for promoting wireless telecommunications.This system can comprise antenna and filter such as cavity body filter, and this actuator forms a part for the telegon being used for filter.
In another example, system 3750 forms a part for medical science or scientific equipment.This equipment can receive the signal being such as derived from one or more transducer, process these signals, produce the output signal that processed by logical block 3765, and use this actuator system 3700 pairs of physical worlds to perform some outputs such as to operate some apparatus assemblies such as endoscope, robotic surgical device, cardiac pacemaker etc.Certainly, much other examples are also fine.
The application of actuator described here and execution mode scope are such as used in multi-actuator array system from single, monolithic chip to adopting the fairly large application of multiple box or equipment.Such as, when being embodied as the micro-actuator on chip, this system can comprise the one or more actuators be formed together with logic, and also can comprise other assemblies such as analog circuit, memory and input/output circuitry.In fact, by using micro-band technique to form above-described a lot of actuator on the substrate comprising wafer substrate.Thus, use film fabrication techniques can manufacture a lot of actuator, wherein much there is described herein, and it all manufactures with microelectromechanical-systems (MEMS) or semiconductor chip manufacture shares.Single layer device can be fabricated to by adopting a lot of actuators of modification ELR material, and be reduced to for generation of the treatment step of this actuator thus and only comprise: deposition, photoetching, ion are ground, contact metallization and section (or its equivalent).In some instances, manufacture chip by some smallest size manufacturing technologies such as 1.3nm level technology, it can reserve larger space for its pond actuator or other circuit on chip.By larger packing, can have less restriction based on layout or distance problem circuit designers, except other benefits, this can allow chip design faster.
Actuators more described here can single-chip integration on one single chip, there are other assemblies usually, such as RF assembly, analog circuit etc.By adopting actuator on chip, this chip obviously can benefit from the performance of improvement.By adopting modification ELR material in chip, except other benefits, this chip can enjoy larger density circuit.Such as by adopting modification ELR material, this chip produces less heat, and due to every bar line can transmit more multicircuit, therefore can adopt thinner line.Because resistance is less or do not have resistance, driver is caused to need more small area analysis transducer signal.By transmitting less electric current on each line, the EMF effect in adjacent lines, on actuator and on other circuit can be reduced.Line and interconnection can be manufactured by modification ELR material.And, owing to significantly reducing line loss, therefore can signal transmission and do not need amplify.
Use the electromagnetic actuators of modification ELR material
There is polytype electromechanical actuator, electricity and/or magnetic energy are changed successfully by it, and can convert merit to electricity or electromagnetic energy under many circumstances.One in most common example comprises various motor.A simple examples is the linear electric motors of limited field.Figure 39-M shows the schematic cross-section of moving coil actuator 3900.As shown, actuator 3900 comprises the translational surface 3905 (such as diaphragm (diaphragm) or the loud speaker conical surface (speakercone)) being coupled to removable inductance coil 3910, and it can be formed by modification ELR material in whole or in part.In one example, actuator 3900 is audio speakers.When providing voltage or coil to receive signal (such as analog audio signal) to coil 3910, surperficial 3910 displacement air are to form sound wave.Coil 3910 is in response to representing the output voltage change provided by the cross-line circle of the displacement of electromagnetic induction, and in the magnetic field of fixed magnets 3915, (relative to figure) moves left and right.
Other examples of " sound-coil form " motor are also fine, and the electromechanical actuator in rotary moving of other motors particularly arbitrary form, and the electromechanical actuator of swing-rotor actuator or other moving-limitings.Generally, these electromechanical actuators comprise at least one inductor.This inductor comprises core and is configured to coiled type and at least part of modification ELR nanometer line or belt of surrounding core, as mentioned below.
There is the inductor of modification ELR material
Figure 38 B-M is the schematic diagram that the inductor 3830 with modification ELR material is shown.This inductor 3830 comprises coil 3834 and core, and in this example, it is air-core 3832.When coil 3834 loaded current (such as on the direction on the right side of the page), in core 3832, produce magnetic field 3836.Coil is formed by modification ELR material at least partly, such as has ELR material base layer (such as unmodified ELR material) and is formed in the film of the modified layer in basic unit.Various suitable modification ELR material is specifically described at this.
Voltage can be applied to coil 3834 by battery or other power supply (not shown), causes electric current to flow in coil 3834.By being formed by modification ELR material, higher than at the temperature needed for traditional HTS material, such as 150K, room temperature or ambient temperature (294K), or at other temperature described here, coil 3834 provides resistance on a small quantity or not for electric current provides.Electric current in coil produces magnetic field in core 3832, and it can be used for stored energy, transmitting energy, restriction energy etc.
Because inductor 3830 comprises the coil 3834 formed by ELR material, therefore inductor can show as similar to ideal inductor, here, due to winding or the series resistance of discovery in conventional conductive coil (such as copper coil) usually, coil 3834 is caused to demonstrate a small amount of or do not have loss, and no matter by the electric current of coil 3834 how.That is, inductor 3830 can demonstrate very high quality (Q) factor (such as close to infinitely great), and it is the ratio of induction reactance and resistance under given frequency, or Q=(induction reactance)/resistance.
In one example, core 3832 does not comprise any other materials, and inductor 3830 is the coil such as absolute coils (such as shown in Figure 38 B-M) without solid core.In another example, core 3832 is formed by nonmagnetic substance (not shown), such as plastics or ceramic material.Material or the shape of core can be selected based on many factors.Such as, select the magnetic permeability core material higher than air magnetic permeability usually can increase the magnetic field 3836 of generation, and increase the inductance of inductor 3830 thus.In another example, core material can be selected according to the demand of the core loss reduced in frequency applications.It will be understood by those skilled in the art that core can be formed by multiple different materials and can form it into multiple difformity to realize feature needed for some and/or operating characteristic.
Such as, Figure 38 C-M shows the core inductor 3840 adopting modification ELR material.This inductor 3840 comprises the core that coil 3842 and magnetic core 3844 are such as formed by ferromagnetic material.Electric current in coil 3842 produces magnetic field 3846 in core 3844, and it can be used for storage capacity, transmits energy, limits energy etc.Because the magnetic permeability of magnetic material in produced magnetic field 3846 is higher than the magnetic permeability of air, and thus, the magnetization due to magnetic material causes it more to support to form magnetic field 3846, and the magnetic core 3844 therefore formed by ferromagnetic material adds the inductance of inductor 3840.Such as, magnetic core can 1000 times or larger factor increase inductance.
Inductor 3840 can utilize various different materials such as ferromagnetic material in magnetic core 3844, as iron or ferrite, and/or the such as silicon steel lamination formed by the magnetic material of lamination.It will be understood by those skilled in the art that the needs according to inductor 3840 and demand, can other materials be used.
In addition, magnetic core 3844 (with, thus, inductor 3840) can be configured to various difformity.In some instances, magnetic core 3844 can be shaft-like or column.In some cases, magnetic core 3844 can be circular or ring surface.In some cases, magnetic core 3844 can be moveable, and inductor 3840 can be made to realize variable inductance.It will be appreciated by those skilled in the art that the needs according to inductor 3840 and demand, other shapes and structure can be used.Such as, in the middle of, magnetic core 3844 can be configured to limit various defect such as due to the core loss that eddy current and/or magnetic hysteresis cause, in addition, and/or inductance is non-linear.
As will be appreciated, the structure of coil 3834 can affect some performance characteristics, such as inductance.Such as, the number of turns of coil, the cross-sectional area, loop length etc. of coil can affect the inductance of inductor.Therefore, although show a structure, but inductor 3830 can be configured in many ways to realize some performance characteristics (such as inductance value), thus reduce some undesirable effect (such as skin effect, proximity effect, parasitic capacitance) etc.
In some instances, coil 3834 can comprise a lot of circles parallel to each other.In some instances, coil can comprise the several circles being in different angles each other.Thus, coil 3834 can be formed as multiple different structure, such as continuous coil is with different angles honeycomb intersected with each other or basket weave figure, and the cobweb figure that coil is formed by the smooth helical coil be spaced, as the twisted wire etc. that multi-strand cable is insulated from each other.
And film inductor can utilize ELR material described here.Figure 38 D-M is the schematic diagram that the inductor 3850 adopting the film assembly formed by modification ELR material is shown.This inductor 3850 comprises the coil 3852 (such as, printed circuit board (PCB), IC installation base plate etc.) be formed on substrate 3854, and optional magnetic core 3856.According to the employing equipment of this inductor or the needs of system, the coil 3852 that can be the modification ELR material be deposited on substrate 3854 is formed with various structures and/or figure.And optional magnetic core 3856 can be deposited on substrate 3854, as shown, or its can be positioned in above coil 3852 and/or the smooth core (not shown) of below.
Use the capacitive displacement actuator of modification ELR material
Except inductor, modification ELR material described here can be used to form capacitor, and here, this capacitor is used in actuator or interlock circuit.In fact, inductor adopt same principle in some equally for capacitor.Distance between the electrostatic force worked between two kinds of electric charges and electric charge is inversely proportional to, and under vast scale, this power can be ignored.But as mentioned below, under comparatively small scale, this power is useful.Use the simple actuator of electrostatic force can be included in when being put on therebetween by voltage and can be pulled to parallel pole movable panel or beam.Can hang this movable panel or electrode by mechanical spring, it can be micro Process beam.When striding across electrode application voltage, the opposite charges on each plate attracts each other.
With reference to figure 41-M, show the example of simple parallel plate capacitor 4100.In this example, capacitor comprises input and output terminal and 4102 and 4104, and it is connected respectively to conductive plate or district 4106 and 4108.The conductive plate of at least part of filled media 4110/distinguish certain distance.Medium can be air, or any other known medium that can use together with capacitor, such as insulator, electrolyte or other materials or compound.
This plate/district 4106 and 4108 can adopt modification ELR material.Alternatively or additionally, this input and output terminal 4102 and 4104 can adopt modification ELR material.Meanwhile, show simple parallel plate capacitor, arbitrary form capacitor can be adopted, such as formed on a semiconductor die those.
In some instances, actuator 3700 can comprise capacitive displacement actuator, and it comprises the capacitor board or structure that are formed by the nano wire of modification ELR material, lead-in wire, band, film, paper tinsel, trace or other structures at least partly.In some instances, two plate one pole actuators 4200 shown in Figure 42 A-M have the fixed reference plate 4205 separated by medium (such as air) and movable panel 4210.As shown in Figure 42 B-M and 42C-M, MEMS technology can be used to realize two plate one pole actuators.Such as, the removable tablet 4210 of micro Process makes it be supported by flexible suspension thing 4220, and its permission is moved about the micro Process datum plate 4205 with hard hanger 4225.
The exemplary construction of the capacitive displacement actuator shown in Figure 42 A-M to 42C-M is also not intended to exhaustive, and can use any structure of capacitor board or element, and it uses the voltage input changed to provide excitation with the one or more capacitor board of displacement or element.Such as, other capacity cells of the geometry had except plate (such as cylinder) can be used.In any one structure, one or more in capacitor board or element (or other elements of actuator) can all or part ofly be formed by modification ELR material.
Use modification ELR except piezoelectricity/pressure magnetic/magnetic deformation actuator
Piezo-activator adopts some material such as quartz (similar characteristic is applied to piezomagnetism actuator, or " pressure magnetic actuator ", and its replacement converts magnetic energy to mechanical energy) expanding in the presence of an electrical field or shrink.Piezo-activator can comprise displacement amplifier, its use multiple structure with increase or amplification piezoelectric actuator thin tail sheep thus produce larger movement.The application of this actuator can comprise and being used in underwater sonar system, dynamic damper, diesel oil dye injection device, lasergyro, precise Positioning Control actuator, ultrasound electric machine, looper motor etc.If efficiency is enough, then these equipment also can convert mechanical energy to electric energy or magnetic energy, and it can be used in sound or shock sensor (such as geophone), in energy capture etc.
The basic example of the piezo-activator 4300 comprising input line 4305 and output line 4310 has been shown in Figure 43-M, and it is coupled respectively to input electrode 4315 and output electrode 4320.This line and electrode can be made up of modification ELR material described here maybe can comprise this material.Electrode has the piezoelectric 4325 be clipped between its sheet.This material 4325 can be formed by quartz, lithium tantalate, lithium niobate, GaAs, carborundum, LGS, zinc oxide, aluminium nitride, lead zirconium titanate, polyvinylidene fluoride or other materials.Because designer can based on the temperature dependency of the cutting angle selection material of quartz, therefore quartz is normally preferred.Although be plate-like shown in Figure 43-M, any other structure is all passable certainly, such as tabular.
Actuator 4300 does not provide a lot of displacements or movement.Therefore, as shown in Figure 44-M, another piezo-activator 4400 comprises a slice piezoelectric 4405, and it has the multi-layered electrode 4402 be formed at wherein, and it is coupled to terminal 4404.Between electrode 4402, form opposite electrode 4406 and also opposite electrode is coupled to opposite terminal (not shown).By signal is applied to terminal, and be applied to electrode thus, folder piezoelectric material layer in-between the electrodes expands, thus produces the power of actuator 4400.
Magnetic deformation actuator adopts some material such as magnetized ferromagnetic crystal, thus its shape changes along with magnetic field intensity increases by two.Magnetic deformation actuator adopts the material of such as terbium-dysprosium-ferroalloy (TD0.3DY0.7F) usually, and it can comprise permanent magnet with premagnetization actuator in actuator.Again, in inductor coil, such as use modification ELR material to produce the magnetic field for actuator, the performance of improvement can be provided.Exemplarily, the inductor 3840 of Figure 38 C-M can comprise axially by the magnetostriction bar at inductor center, thus forms magnetic deformation actuator.
Use the micro-actuator/MEMS of modification ELR material
Micro-actuator such as MEMS comprises those that have that very undersized three-dimensional mechanical structure such as uses photo-mask process, anisotropic etching and other similar techniques to manufacture, usually finds in semiconductor fabrication.Micro-actuator and MEMS are the very little plant equipment by current drives thus, and it allows to perform sophisticated functions (small size will inevitably cause exciting force or the amplitude of reduction) via one or more assembly such as processing unit, transducer, frequency converter and/or other circuit and system.The application example of this micro-actuator is used to comprise micro-move device or electromagnetic micro electric motor, location and grasping system, micromirror, micro-circuit breaker, micro-flow-controlled device such as micro-valve and Micropump etc.Use MEMS electronic equipment in modern technologies, become usual.Such as, at air bag, communication apparatus, jet printing device, display device, cell phone, geophone with much can find the MEMS with environmental sensor in other equipment.
Described above is some electrostatic or the capacitive actuator example as MEMS.In Figure 45-M, illustrated that another example is micro mirror 4500.This micro mirror comprises the reflecting part or the plate 4505 that are connected to supporting construction 4510 by means of beam or axle 4515.Can be and to be formed on substrate and electrode below plate 4505 provides voltage with towards any one electrode incline plate.Micro mirror array comprises hundreds of or several thousand micro mirrors usually in an array, has the control circuit array allowing to control or rotate single mirror.As a result, pixel class reflects light in different directions that meet, here, each pixel represents independent micro mirror.In other words, single micro mirror can " be opened " or " closedown ".This micro mirror array can be used in video-projection, with for the intensity of the window control incident light in structure and direction, such as between two planes of insulating glass.
Micro-actuator can use static excitation, thus parallel pole can perform the electrostatic force attracted therebetween, to move a part relative to standing part, as described above.The example of this equipment is that pectination drives 4600, shown in Figure 46-M.As shown, fixing comb 4605 comprises multiple finger electrode, and it finger piece comprising removable comb 4610 extends to space groove wherein.Fixing and removable comb 4605 and 4610 comprises or is coupled to respective electrode 4625 and 4630.Mechanical spring 4615 can fix removable comb 4610, but also allows it to move.The finger piece of fixing and mobile comb does not contact.Pectination driving 4600 overcomes the restriction of parallel plate capacitor driving or actuator, such as when the voltage exceeding threshold value is applied to actuator, avoids " pull-up " unsteadiness.
Modification ELR material can be used in other parts of interconnecting conductor, holding wire and this micro-actuator.Figure 47-M shows and uses modification pole low resistance interconnect (ELRI) 4710 for connecting on MEMS4720 to IC installation base plate or encapsulating other circuit or the assembly 4730 of (SiP) 4740 in system.Such as, ELRI4710 can be used for connecting MEMS4720 to analog circuit and/or digital circuit such as microprocessor, microcomputer, microcontroller, DSP, system on chip (SoC), antenna, the 2nd MEMS, ASIC, ASSP, FPGA and/or other circuit, assembly or equipment 4730.The technology used in these execution modes can be used for connecting MEMS4720 to other circuit or assembly 4730.In addition, in fact these technology may be implemented on any semiconducter IC installation base plate of the MEMS4720 containing identical or different type.Such as, for SiP, ELRI4710 can be used for MEMS device on connection substrate with configuration to the connection of IC or other passive blocks such as antenna, not there is appreciable resistance, these elements are allowed to be connected directly between its executable operations node separately just as it, and no matter how (although frequently use term " MEMS ", it is intended to comprise any micro-actuator) its physical location on substrate.
MEMS can comprise one or more assembly.Example includes but not limited to radio frequency cable, adjustable transmission line, waveguide, resonator, ELR assembly, passive block, ELR passive block, quasi-optics assembly, variable inductor, adjustable condenser and/or electromechanical filter.As other examples, one or more assembly can comprise transducer with testing environment parameter.Spendable sensor type example includes but not limited to pressure sensor, temperature sensor, thermal radiation sensor, microwave remote sensor, megahertz transducer, optical sensor (comprising infrared, ultraviolet, x-ray & cosmic ray), liquid kinetic energy transducer (comprising gas and liquid), shock sensor, accelerometer, humidity sensor, electric-field sensor, magnetic field sensor and/or sound transducer.
Generally, IC installation base plate can have multistage interconnected one or more conductive paths, except being designed to connect respectively in continuous conduction path the specific connecting through hole of each, insulate betwixt, use and favourable density and internuncial grade are set, be made up of ELRI, this ELRI has the ground floor that is made up of ELR material (such as unmodified ELR material) and comprises the material modified second layer being bonded to ground floor ELR material.Component network is connected to MEMS by one or more conductive path.Alternatively or additionally, MEMS can comprise one or more inner track and/or assembly, it is by material modified formation theing be bonded to ground floor ELR material.This one or more assembly can be electric component and/or mechanical component.Such as, at least one execution mode, one or more assembly can comprise ELRI passive block group, adjustable transmission line, waveguide, electromechanical filter, transducer, switch, actuator, structure and/or assembly.
Use ELRI can cause a lot of advantage for connecting MEMS circuit to the analog/digital circuit on IC or SiP and/or other circuit/assemblies.Such as, because one or more conductive path has the dead resistance of nearly zero, therefore this can allow MEMS to be connected to this group circuit or assembly, and does not rely on the position in encapsulation.Conductive path can have negligible resistance and can have the wavefront time of delay continued close to zero.Like this, the signal delay in electricity is mutual and drive current can obviously reduce.In addition, due to parasitic capacitance, cause ELRI that MEMS and circuit or assembly can be made to be integrated on IC with optimum position and the minimum degeneration caused by dead resistance.As another example, ELRI allows to design MEMS and analog circuit a little independently.This independent design is beneficial to fast Development.And this allows more freely to utilize MEMSIP and analog circuit IP especially by the pre-designed MEMS of embedding, and user does not need MEMS design specialist.By allowing more independently ELRI between MEMS and Analog Circuit Design, can greater number and more various element be integrated on IC, therefore MEMSIC increase sharply in new product-this surge is that the product design that improves and manufacture provide learning curve.
This ELRI technology synergy is adopted to contribute to utilizing other ELRI technology at IC product.Example comprises MEMSELRI technology as the ELRI for connecting multiple MEMS circuit, for connecting the ELRI of MEMS to other circuit on installation base plate or SIP, for the ELRI of the 3D interconnection on IC (it connects IC to the installation base plate in encapsulation), the ELRI of the power distribution on installation base plate, and other, all these further increases the development of all ELRI technology, and can improve the performance of product.
Material type, the application of modification ELR material, the size of components adopting modification ELR material, the equipment of employing modification ELR material or the operational requirements etc. of machine can be given, manufacture ELRI, actuator and other assemblies.Like this, during Design and manufacture device, the material of the basic unit being used as modification ELR material can be selected based on various consideration and action required and/or manufacturing characteristics and/or be used as the material of modified layer of modification ELR material.Although for layout and/or the setting of modification ELR material, at this illustrate, describe each suitable geometry and structure, much other geometries are also fine.Except material thickness difference, use different layers, there is the modification ELR material of multiple adjacent modified layer, by except multiple modification ELR material of single modified layer modification and other three-dimensional structures, these other geometries comprise about the different qualities of length and/or width, structure or layout.Thus, the modification ELR material of any appropriate can be used according to required application and/or characteristic.
In the example used in IC, the first electroless copper deposition operation deposits the ground floor of pole low resistance (ELR) material in the dielectric insulator of IC, substrate or SiP.This ground floor such as can be made up of YBCO or BSCCO.Be deposited on the ground floor of ELR material by the material modified second layer formed, produce the ELR interconnection of single rank.The second layer such as can comprise chromium and described here other are material modified.Can select to be used as the material of first or basic unit based on various consideration and action required and/or manufacturing characteristics and/or be used as the material of modified layer.Example comprises chemical compatibility, cost, performance object, equipment availability, material availability and/or other consideration and characteristic.Post-processing operation such as photoetching and material remove (etching or other process) and form ELRI to form various assembly, conductive path and/or interconnection.Such as, in some embodiments, can form ELRIMEMS, ELRI passive block, ELRIRF antenna, power distribution system and/or have can the signal bus of one or more conductive paths of signal transmission.
And this technique can comprise selects some high-k substrate to respond to provide signal specific.As mentioned above, the substrate it forming actuator or other circuit can affect output.A lot of substrate is all fine, and comprises any one in following substrate, overall or be deposited on another substrate: the quartz of amorphous or crystallization, sapphire, aluminium oxide, LaAIO 3, LaGaO 3, SrTiOs, ZrO 2, MgO, NdCaAIO 4, LaSrAIO 4, CaYAIO 4, YAIO 3, NdGaO 3, SrLaAIO 4, CaNdAIO 4, LaSrGaO 4, YbFeO 3.Substrate can be chosen as inertia, with growth, deposit or arrange good quality modification ELR material path mutually compatible, and there is desirable characteristics such as the filter be formed on substrate, comprise planar filter.
Use the electrochemistry actuator of modification ELR material
Electrochemistry actuator based on the principle such as small voltage being applied to electrode, its catalytic gas and fuel cell afterwards such as by using electrochemistry oxygen air pump to transmit increases the pressure in closed cell.Figure 48-M shows the example of the electrochemistry actuator 4800 comprising housing or housing 4805, and it maintains electrochemistry actuator or the fuel cell 4810 of one or more co-axial alignment.Although show a fuel cell 4810, show three other fuel cells in dotted lines, be all stacked in housing 4805 and push up each other.
Each fuel cell 4810 comprises first or lower electrode 4815 and second or upper electrode 4820.Upper and lower electrode limits the middle chamber keeping air 4825.Each fuel cell can be formed as plate-like, square or other structures, and can move freely in housing 4805.Upper and lower electrode 4820 and 4830 points are opened by the insulator 4830 being formed annular or other structures, keep gas 4825 simultaneously.
Housing 4805 is formed by electric conducting material such as metal.When voltage being applied to housing 4805 and electrode 4840, the voltage obtained between upper and lower electrode 4820 and 4815 provides voltage for gas 4825.In response to this, gas expansion, and produce power upwards, this can act on plunger or piston 4850.By using two or more fuel cell 4810, larger displacement can be obtained.
Other electrochemistry actuator is also fine.Such as, be not adopt gas, but use wax, it has larger bulk temperature correlation, and it expands and can produce larger movement to piston thus.Can this wax is positioned in rigid container, piston is positioned at wherein (or the piston in equipment elasticity body), and this container be heated to make wax expand and extrude or go out piston.
Except the interconnection between actuator, modification ELR can be used for the interconnection with electrochemistry actuator.Such as, modification ELR except can be used for upper and lower electrode 4815 and 4820, also for housing 4805 and electrode 4840.Modification ELR material can be formed as being wrapped in casing surroundings or inside.Other results or geometry are also fine certainly.
Use the shape store actuator of modification ELR material
Other examples use thermal excitation such as to cause bimetallic device responds in variations in temperature deflection or to extend.Another example is the shape memory alloy actuator using shape memory metal or pottery, its signal of telecommunication applied based on outside or temperature change state and expansion/contraction.The example of this shape-memory material comprises NiTi, copper and alloy (such as CuZnAl and CuAlNi), or even Ni 2mnGa, it is the marmem using field controllable.
By shape-memory material is formed as some geometric figure, such as spring or coil, the little linear change that can expand along its length transmission alloy, to transmit larger final mean annual increment movement.By modification ELR material being used for the electrode of circuit to drive shape memory material, augmented performance can be realized.Shape-memory material actuator can be used for the element driving, control and discharge various automobile, climate controlling element, clamper etc.
Use the electricity change/magnetic variation hydraulic actuation device of modification ELR material
The actuator adopting electricity to become liquid is usually included in the pair of electrodes in closed container, and this container keeps viscosity in response to the particular liquid of electric field change, says in a capsule, and this liquid " solidification " can become plastic body.The example of suitable liquid comprises the nonpolar basal liquid having little connectivity and do not have relative dielectric constant, and the polarizable solid particle with suitable high relative dielectric constant can be diffused into wherein.Light oil is the example of basal liquid, and solid particle is such as silicic acid anhydride or alumino-silicate, metal oxide etc.This actuator can operate under shear-loaded, liquid pattern or squeeze mode, thus respectively by this to electrode (being here, both fixing) or provide the power parallel with pair of electrodes towards fixed electrode.The application of this actuator can be Locating driver, vibration absorber, tactile element etc.
With reference to figure 49-M, show the example of vibration absorber or actuator 4900, it comprises the container or vessel 4905 with cap 4910.These vessel can be columniform, and the piston 4915 had via the bar 4920 extended in the middle of cap 4910 extends to wherein.Vessel 4905 keep electricity to become liquid 4930.U-tube or passage 4935 allow liquid 4930 to move on piston 4915 top or bottom.Pair of electrodes 4940 and 4954 receives the external electric signal causing electric field to extend in-between the electrodes.The viscosity of this electric field influence liquid 4930, thus the response changing vessel 4905 inner carrier 4915.Although not shown, valve can be positioned at the flowing of confined liquid 4932 in pipe 4935, the volume of lower below above piston 4915.
Modification ELR material can be used for electrode 4940 and 4945, thus effectively produces electric field betwixt.Although show a geometry, other structures are also fine arbitrarily.And adopt electricity to become the same principle of liquid also can in the same manner for adopting the magnetic variation liquid of iron element/ferromagnetic particle such as carbonyl iron alloy in the hyposmosis base fluid body also comprising stabilizer, to prevent particle aggregation and to solidify.Application can comprise for brake, clutch, motor installation etc.
There is suitable embodiment and the application of the actuator of modification ELR material
As mentioned above, modification ELR material has the performance depending on temperature.As a result, the actuator described here of modification ELR material is adopted similarly to depend on temperature.Influence of temperature change field penetrates in band conductor, as mentioned above.This change of modification ELR material can be molded based on the temperature of modification ELR material as described herein and respondent behavior, or can from empirically obtaining.Note, by adopting modification ELR material, line resistance can be ignored, but can adjust this resistance based on temperature, as shown in the thermometer that provides at this.Therefore, adjustable actuator design with compensation temperature, or exports by changing temperature control actuator.
With reference to figure 50-M, the example of system 5000 is shown, it comprises the circuit 5010 being coupled to temperature-control circuit 5015, and logic 5020 (although each chunk shown in Figure 50-M is interconnection, connection more or less is all fine).Circuit 5010 adopts one or more actuator described here, and it is formed by modification ELR material at least partly.This logic control temperature-control circuit, it is the low temperature of controlled cooling model device/freezer unit such as cooling circuit 5010 or liquefied gas cooler conversely.Thus, in order to increase the response of susceptibility or system 5000, logic 5020 transmits signals to temperature-control circuit 5015 to reduce the temperature of circuit 5010.As a result, adopt the circuit 5010 of modification ELR material to cause modification ELR material to increase conductivity, thus increase circuit sensitivity or response.
Although generally described some actuator above, much other actuators have also been fine.Such as, modification ELR material can be attached in actuator with regulating circuit (such as filter).Although show single actuator, actuator can combine to form more complicated actuator system or array.About other classification actuators discussed herein, a lot of array of actuators structure is all fine and is the design consideration that designer is carried out up to the multi-actuator system that small part is formed by modification LER material.Modification ELR material described here can be used for the complicated actuator system of the combination comprising two or more actuator and principle described here, even without clearly describing these combinations.In fact, this complicated actuator system can adopt the actuator of two or more dissmilarity or foreign peoples, is not simply similar or similar actuator.This actuator system or array can comprise the relatively similar actuator all formed by modification ELR material, or foreign peoples's mixing of variety classes actuator, and some actuators are formed by non-ELR material, or different actuator and combination of different materials.Thus, complicated actuator system or array can adopt two or more actuator, its by the two or more similar actuator that formed primarily of modification ELR material, the two or more foreign peoples's actuator formed primarily of modification ELR material and/or by conventional conductor and modification ELR material formed two or more similar/foreign peoples's actuator formed.
Adopt partly or the concrete example of actuator of the assembly formed by modification ELR material exclusively although there is described herein, but it will be understood by those skilled in the art that assembly such as those assemblies listed above that in fact any actuator structure all can be taken to small part and formed by modification ELR material.Various actuator and actuator system adopt conducting element and other elements widely, some of them are listed hereinbefore (although modification ELR material can use together with any conducting element in circuit, but more can understand, according to people this to the definition of " conduction ", modification ELR material is beneficial to energy or signal along its length or area transmission).As a result, can not enumerate with elaboration institute's likely actuator and the actuator system adopting the assembly formed by modification ELR material.
Although describe some suitable geometries for some actuators at this illustrate, much other geometries are all fine.These other geometries not only comprise about the different graphic of length and/or width, structure or layout, also comprise the different-thickness of material, use different layers and other three-dimensional structures.This present inventor can expect that all actuators in fact well known in the art and related system thereof all can adopt modification ELR material, and believe that the those skilled in the art of each example providing modification ELR material, actuator and the application's principle are not when carrying out undue experimentation, can realize other actuators of the one or more assemblies formed by modification ELR material in whole or in part.
In some embodiments, the actuator comprising modification ELR material can be described below:
A kind of actuator, comprising: at least one transducer, it is configured to convert received electric energy to mechanical energy; Be coupled at least one conductive input line of transducer, the output line that wherein conducts electricity is configured to signal be inputed at least one transducer with actuated switch; Wherein at least partly transducer or conductor wire are formed by modification pole low resistance (ELR) part, and wherein modification ELR part by the ground floor comprising ELR material with comprise the material modified second layer being bonded to ground floor ELR material and form.
A kind of method manufacturing actuator component, the method comprises: use pole low resistance (ELR) material on piezoelectricity or pressure magnetics substrate, place the current-carrying part at the first and second intervals, wherein the conductive path at the first and second intervals forms the terminal of piezoelectricity or pressure magnetic actuator, and wherein ELR material by comprising the Part I of ELR material and comprising the material modified second layer being bonded to Part I ELR material and form.
A kind of actuator, comprising: substrate; To be formed on substrate and to be configured to received electric energy to convert at least one micron order or the nanoscale transducer of mechanical energy; Being formed on substrate and being coupled at least one conductive input line of transducer, wherein conductive input line is configured to signal is input at least one transducer with actuated switch; With, wherein at least partly transducer or conductor wire are formed by modification pole low resistance (ELR) part, and wherein modification ELR part by the ground floor comprising ELR material with comprise the material modified second layer being bonded to ground floor ELR material and form.
A kind of actuator system, comprise: multiple actuator component, wherein each actuator component comprises: transducer, with one or more conductive path, wherein one or more conductive paths comprise geometry so that input signal is provided to transducer, being made up of the first material at least partially wherein in transducer and/or one or more conductive path, this first material is by comprising the Part I of ELR material and comprising chemical bonding to the material modified Part II of Part I ELR material and formed, wherein multiple actuator component provides the actuator function of combination jointly.
A kind of system, comprising: logic or analog circuit, with at least one actuator component as an element coupling in the middle of antenna and logic OR analog circuit, wherein actuator component comprises: one or more electricity is to mechanical transducer, one or more conductive path, wherein one or more actuators and/or conductive path comprise geometry, be formed to provide actuation function based on received control signal, being made up of electric conducting material at least partially in wherein one or more actuators and/or conductive path, this electric conducting material is by comprising the Part I of ELR material and comprising the material modified Part II being bonded to Part I ELR material and formed.
The filter of the 13rd part-formed by ELR material
This part describes and relates to Fig. 1-36 and Figure 37 A-N to Figure 50-N; Therefore, the whole reference numbers comprised in the portion relate to the element found in these figures.
The all kinds filter adopting pole low resistance (ELR) material is described herein.For type filter more described below, filter comprises the substrate it forming or is provided with film, band, paper tinsel, lead-in wire, nm-class conducting wire, trace or other conductors, here, film, band, paper tinsel, lead-in wire, nm-class conducting wire, trace or other conductors have employed the ELR of modification.Some assembly constructing filter adopts the other types filter of the ELR material of modification.In some examples, based on the modification ELR material of material type, application, the components/elements size adopting modification ELR material, the device of employing modification ELR material or the operational requirements etc. of machine, manufacture the ELR material of modification.Like this, during Design and manufacture filter, can the material of the basic unit's (such as unmodified ELR material) being used as modification ELR material be selected based on various consideration and required operation and/or manufacturing characteristics and/or be used as the material modified material of modification ELR material.At the temperature higher than usually relevant to existing high-temperature superconductor (HTS) temperature, modification ELR material provides pole low resistance to electric current, thus except other benefits, strengthens the operating characteristic of these filters at relatively high temperatures.
Now the use of modification ELR material in filter will be specifically described.Usually, a lot of filter construction is all fine and can considers that the design of filter implementing the filter formed by modification ELR material designs it.In fact, the principle of the design controlling conventional filter can be used for the new filter produced by adopting modification ELR material described here, thus, although illustrate and describe some filter geometries at this, much other structures are also fine certainly.And although highlight specific filter system in this description can use the specific components formed by modification ELR material, these examples being intended to modification ELR assembly are schematic and non-exhaustive.As long as provide each example of the present disclosure, those skilled in the art just can determine other assemblies in the same or similar filter system that may be formed by modification ELR material.
Figure 37 A-N shows the schematic diagram illustrating and can adopt the filtering system 3700 of modification ELR material.Input or transmission line 3705 receive input signal and provide it to filter 3710.Filter 3710 can adopt the one in a variety of form described here.Filtering system 3700 can comprise one with upper filter, and its second is shown as optional filter 3715.By after one or more filter 3710,3715, on online or terminal 3720, filtering signal is output as the signal of filtering.
Before the details explaining filtering system, apply describing some being placed in device context (context) by filtering system.Figure 37 N-N shows and adopts the equipment of filtering system 3700 or the example of system 3750.Equipment 3750 receives or signal transmission 3760 via port or other I/O assemblies.Equipment 3750 can comprise filtering system 3700, logic and/or analog circuit 3765, power supply 3775 and I/O (I/O) assembly 3770, its any or all can be included in housing 3775 or assemble a unit in addition.In the example of Figure 37 B-N, equipment 3750 also can comprise antenna 3780.
Equipment 3750 can take the one in various ways.In one example, this equipment can be mobile phone, smart phone, above-knee notebook, flat board or other portable electric appts.When this example, power supply 3775 can be battery, and filtering system 3700 can form a part for RF circuit, and it can be formed on one or more semiconductor chip.Logic 3765 can comprise processor and memory, and I/O3770 can comprise keyboard or keypad, indicating equipment, display device, microphone, loud speaker or other well known elements simultaneously.Other known tip assemblies a lot of in this example of portable electric appts are also fine certainly.But because it is readily appreciated that for those skilled in the art, therefore do not illustrated.
In another example, equipment 3750 is the cellular telephone receiver/transmitter/transceivers for cell position (cellsite) or base station (basestation).In this example, logic 3765 can comprise RF circuit and be beneficial to wireless telecommunications.Antenna 3780 can comprise one or more cellular phone antennas.
In an example again, eliminate antenna 3780, and equipment 3750 defines a part for medical science or scientific equipment.This equipment can receive such as from the signal of one or more transducer, uses filtering system 3700 to filter these signals, and produces the output signal processed by logic 3765.Certainly, much other examples are also fine.The application of filter described here and practical range, from single, monolithic integrated circuit chip such as RFID chip to the fairly large application adopting multiple unit or equipment, are such as used as in active antenna array system, the position of cellular telephone etc. of distribution.Such as, when being embodied as RFID chip, this equipment comprises the antenna 3780 and memory that are coupled to RF circuit and logic.By this device fabrication on a single chip, or dwi hastasana can be become the microstrip antenna be formed on substrate such as label, flexible base, board, printed circuit board (PCB) etc., remaining components is monolithically integrated on one single chip (or multiple interconnect die).
Start, basic example, the filter 3710 of filtering system 3700 can comprise the filter 3800 that simple resonance structure is such as formed as LC accumulator, illustrates in Figure 38 A-N.As shown, filter 3800 online 3805 and 3810 accepts input signal.Filter comprises inductor 3815 and the capacitor 3820 of parallel coupled.Two or more this structure can be provided, and series connection inductor and/or capacitor.In these examples, filter 3800 also can comprise one or more resistance.Certainly, design of filter is very special for wherein adopting the application of filter and application-specific, and required frequency or frequency range and other factors drive the components values and quantity that adopt in filter.Thus, owing to applying from application and being different between equipment and equipment, therefore do not need at this particular value and the quantity that describe assembly.
Usually, lamped element (lumpedelement) filter such as shown in Figure 38 A-N can comprise at least two elements of serial or parallel connection coupling, and at least one element is inductor or capacitor here.This inductor comprises core (core) and is configured to the modification ELR material also surrounding this core in coil at least partly.Capacitor comprises at least two conduction regions or element, and at least one region/element is formed by modification ELR material here.Medium is separated two conductive region/elements.Generally, modification ELR material described here can be used to form at least some conducting element in known or traditional filtering unit such as inductor and capacitor (comprise the filter of plane, hereafter discuss).
By in filtering unit or central employing modification ELR material, can realize the qualitative factor of the near ideal of resonance filter 3800, this can cause the special selection of filter equally, such as in the middle of other application for wireless application.(selection generally involves the performance measuring wireless receiver refusal (such as weaken) the not ability of hope frequency relative to required frequency or frequency band (channel)).If tradition manufactures, performance of filter can be subject to the impact of conductor wire 3805 and 3810 intrinsic resistance usually, but if use modification ELR material to manufacture this line, then this resistance can be ignored.Equally, by adopting modification ELR material, the resistance caused by inductor coil also becomes can ignore.
In some instances, at the temperature between the transition temperature and room temperature of traditional HTS material, adopt any one filter described here of modification ELR material can provide plate low resistance for current flowing.In these examples, as the described herein higher than at the temperature of more than 150K, adopt any one filter described here of modification ELR material can provide pole low resistance for current flowing.In each example, filter can comprise suitable cooling system (not shown), for for particular modification ELR material cooled filter element to critical temperature.Such as, cooling system can be the system that the ELR material in filter at least can be cooled to such as similar to liquid fluorine Leon temperature or other temperature described here.That is, can based on the type of the modification ELR material be used as in filter and structure choice cooling system.Also there are other considerations selecting cooling system, the quantity of power such as dissipated by this system.
There is the inductor of modification ELR material
Figure 38 B-N is the schematic diagram that the inductor 3830 with the modification ELR film formed by modification ELR material is shown.Inductor 3830 comprises coil 3834 and core, and in this example, this core is air-core 3832.When coil 3834 loaded current (such as on the direction on the right side of paper), in core 3832, produce magnetic field 3836.Coil is formed by modification ELR film at least in part.Various applicable modification ELR film is specifically described at this.
Voltage is applied to modification ELR coil 3834 by battery pack or other power supply (not shown), causes electric current to flow in coil 3834.At the temperature used in higher than traditional HTS material, such as higher than the temperature, room temperature etc. of 150K, the coil 3834 formed by modification ELR film provides resistance on a small quantity or not for current flowing provides.The electric current flowed in coil produces magnetic field in core 3832, and it can be used for stored energy, transmitting energy, restriction energy etc.
Because inductor 3830 comprises the coil 3834 using modification ELR material to be formed, therefore inductor can with ideal inductor similarly action, here due to the winding that usually found in the inductor by conventional conductive coil (such as copper coil) or series resistance, coil 3834 is caused to demonstrate a small amount of or do not have loss, and regardless of the electric current through coil 3834.Namely, inductor 3830 can demonstrate very high quality (Q) factor (such as close to infinitely great), this is the ratio of inductive reactance (inductivereactance) and resistance under given frequency, or Q=(inductive reactance)/resistance.
In one example, core 3832 does not comprise any additional materials, and inductor 3830 is the cores not having physics core, such as unit coil (stand-alonecoil) (such as the coil shown in Figure 38 B-N).In another example, coil 3832 is formed by nonmagnetic substance (not shown) such as plastics or ceramic material.Material or the shape of core can be selected based on various factors.Such as, differential permeability can increase produced magnetic field 3836 usually higher than the core material of air permeability, and increases the inductance of inductor 3830 thus.In another example, core material is selected to depend on the demand reducing core loss in frequency applications.It will be understood by those skilled in the art that core can be formed by multiple different materials and can be formed multiple difformity to realize some desirable characteristics and/or operating characteristic.
Such as, Figure 38 C-N shows the magnetic core inductor 3840 adopting modification ELR film.Inductor 3840 comprises the core that coil 3842 and magnetic core 3844 are such as formed by ferromagnetic or ferromagnetic material.In coil 3842, the electric current of flowing produces magnetic field 3846 in core 3844, and this can be used for stored energy, transmits energy, limits energy etc.Because the magnetic permeability of magnetic material in produced magnetic field 3846 is higher than the permeability of air, therefore the magnetic core 3844 formed by ferromagnetic or ferromagnetic material adds the inductance of inductor 3840, and therefore because the magnetization (magnetization) of magnetic material causes it more to support the formation in magnetic field 3846.Such as, magnetic core can increase the inductance that coefficient is more than 1000.
Inductor 3840 can utilize various different materials in magnetic core 3844 inside, such as ferromagnetic material, as iron or ferrite, and/or forms such as silicon steel lamination by the magnetic material of lamination.It will be appreciated by those skilled in the art that and can use other materials, this depends on needs and the requirement of inductor 3840.
In addition, magnetic core 3844 (with inductor 3840 thus) can be configured to various difformity.In some instances, magnetic core 3844 can be bar or cylinder.In some cases, magnetic core 3844 can be annulus or annular.Under certain situation, magnetic core 3844 can be moveable, and inductor 3840 can be made to realize variable inductance.It will be appreciated by those skilled in the art that and can use other shapes and structure, this depends on needs and the requirement of inductor 3840.Such as, wherein, magnetic core 3844 can be configured to limit the non-linear of core loss that various deficiency such as causes due to eddy current and/or magnetic hysteresis and/or inductance.
As will be appreciated, the structure of coil 3834 can affect certain operating characteristic such as inductance.Such as, the number of turns of coil, the sectional area, loop length etc. of coil can affect the inductance of inductor.Although illustrate a structure, but inductor 3830 can be configured in many ways to realize some performance characteristics (such as inductance value), to reduce some undesirable impact (such as: skin effect, proximity effect, parasitic capacitance) etc.
In some instances, coil 3834 can comprise a lot of circles of placement parallel to each other.In some instances, coil can comprise the different several circles of angle each other.Thus, coil 3834 can be formed as various different structure, such as honeycomb or continuous coil are each other with the basket weave figure of various angle right-angled intersection, and the cobweb figure that coil is formed by the flat spiral coil be spaced, just as the twisted wire etc. that each strand is insulated from each other.
And film inductor can utilize ELR assembly described here.Figure 38 D-N is the schematic diagram that the inductor 3850 adopting modification ELR film assembly is shown.Inductor 3850 comprises the modification ELR coil 3852 be formed on substrate 3854 (such as printed circuit board (PCB)), and optional magnetic core 3856.The coil 3852 that can comprise the modification ELR material depositing on substrate 3854 or etch in substrate 3854 can be formed as various structures and/or figure, and this depends on the employing equipment of this inductor or the needs of system.And optional magnetic core 3856 can be deposited on substrate 3854 or be etched in substrate 3854, as shown, or it is positioned in above coil 3852 and/or plane core (planarcore) (not shown) of below.
There is the capacitor of modification ELR material
Except inductor, modification ELR material described here can be used to form capacitor.In fact, some same principle being used for inductor similarly can be applied to capacitor.With reference to figure 38E-N, show the example of simple parallel plate capacitor 3870.In this example, capacitor comprises input and output terminal 3872 and 3874, and it is connected respectively to conductive plate or district 3876 and 3878.Conductive plate/district is by being filled with the distance of medium 3880 at least partly separately.This medium can be air or any other medium for capacitor, such as insulator, electrolyte or intelligible other materials or compound.
Plate/district 3876 and 3878 can adopt modification ELR material.In some instances, input and output terminal 3872 and 3874 can adopt ELR material.Although show simple parallel plate capacitor, the capacitor of arbitrary form can be adopted, such as form on a semiconductor die those.
There is the flat filter of modification ELR material
A kind of type filter being particularly suitable for adopting modification ELR material described here is flat filter.Flat filter adopts conductive strips or microstrip transmission line usually, and it can be formed in the conductive trace on dielectric substrate such as printed circuit board (PCB); But, this flat filter can be manufactured with very little scale or on less substrate, even adopt semiconductor fabrication process or other nanometer technology.
Figure 39-N shows the example of simple flat surface filter construction, and the simulation of its lumped-circuit is substantially identical with the filter 3800 of Figure 38-N.The short-term (stub) 3915 that input transmission line 3905 and output line 3910 are grounded interrupts.(by not by short ground return, forming effective series equivalent by the inductor of series connection between input and output line 3905 and 3910 and capacitor).Figure 40 A-N shows another example had as the input line 4005 of short-circuit line coupling and the flat filter 4000 of output line 4010; Half lumped element configuration that flat filter 4000 is simulated is in shown in Figure 40 B-N.
Below the component filter of flat filter or similar distribution, the inductance of location or " lump " filter, electric capacity and resistance is not had in discrete inductor, capacitor, resistance or other elements, but replace being formed by inserting one or more discontinuous point in transmission line, here, discontinuous point represents the reaction impedance to the wave surface of advancing along transmission line.Due to the line inductance increased via external magnetic field infiltration, cause slowing down when propagating along superconducting transmission line waveform, but the more important thing is, normal conductor has the depth of penetration (skindepth) as frequency function, here, increase frequency and reduce the depth of penetration.But ELR material ordinary representation along the low-down loss of transmission line, thus typically reduces depth of penetration consideration.Thus, by modification ELR material described here, can the depth of penetration be ignored in some applications, or empirically can measure or adopt/compensate this depth of penetration, and be included in consideration when being designed for the filter of application-specific.
Short-term self is in the band-pass filter available, simultaneously when observing in lamped element embodiment, the height of a series of alternating segments and low-impedance line structural belt bandpass filter can be used with corresponding with series reactor to bridging condenser.Figure 41 A-N shows the example of this low pass filter, and Figure 41 B-N shows the simulation of its lamped element simultaneously.Particularly, Figure 41 A-N shows the example of the stepping impedance low pass filter with input and output line 4105 and 4110 and the stepping high-impedance component 4115,4120 and 4125 of alternately connecting and low impedance element 4130,4135 and 4140, to form inductance alternately and condensance element.The element of any amount can be adopted, by the ellipse representation shown in figure.Certainly, can be other geometries various, and the element in filter can be by wavelength needed for filters affect 1/4th.
The example of the alternately short-term being similarly constructed low pass filter has been shown in Figure 42 A-N (there is straight short-term 4202) and Figure 42 B-N (butterfly-shaped or radial short-term 4204).For filter designer, the geometry of butterfly-shaped short-term, tri-lobed short-term or other radial short-terms is adopted to allow more easily modeling.Other geometries can comprise the short-term performing bridging condenser, here, are located on the opposite side of online 4105 and 4110 by short-term.
Another kind of design of filter adopts in-line capacitance gap, such as shown in Figure 43 A-N, to be coupled input and output line 4105 and 4110 here by means of current-carrying part 4302 and gap 4304.Current-carrying part 4302 is used as resonator, and it is the half of required wavelength.The existing capacitance gap filter of this character can be subject to the impact of insertion loss usually, causes low Q factor.But, by adopting modification ELR material described here, avoid this deficiency of existing capacitance gap filter.Again, other geometries are also fine certainly.Figure 43 B-N shows the input and output line 4105 and 4110 be coupled by means of the diagonal conductive strips 4306 separated by similar gap 4304.The tilt geometry of Figure 43 B-N contributes to being reduced in surface area required on the substrate of filter.
One be illustrated in shown in Figure 43 C-N again, it illustrates strip line hair clip filter (hairpinfilter).As shown, this filter comprises a series of U-shaped conductive trace or path 4308 that arrange and embark on journey, and every paths all skips 180 degree from adjacent path.In all examples, true below ellipse representation, the path more or less of quantity shown in filter can comprise comparatively or element.
Above-mentioned a lot of flat filters combine " tradition " filter concept, and much other forms are also fine certainly.In fact, the principle of management legacy filter such as Design of microwave filters can be used for producing the filter adopting modification ELR material described here.Such as at N.Lancaster, PassiveMicrowaveDeviceApplicationsofHigh-TemperatureSupe rconductors (CambridgeUniversityPress, 1997), such as, the further details relating to some design of filters can be found in the 5th chapter.
There is the delay line/slow-wave transmission line filter of modification ELR material
Other filters comprise delay line filter or slow-wave transmission line filter, can similarly form it into micro-band, strip line, complanar line etc., and can be deposited on one or more substrate, normally on dielectric substrate.The thickness (described below) of substrate can control the cross-couplings between insertion loss and adjacent lines, and here, line is assembled more closely, and does not need coupling thus provide longer delay for given substrate.Adopt the delay line of modification ELR material described here to provide superior lossless transmission medium, for the only loss of several decibels, there is the delay up to hundreds of nanosecond.
Figure 44 A-N shows the example of the micro-band delay line filter of the single transmission line with the coiling conductor 4405 be coupling between input and output line 4105 and 4110.Winding portion 4405 can have transforming impedance part, and it can transmit filter response (filteringresponse).As the example of this change of the impedance of change thickness shown in Figure 44 B-N, coiling here 4405 has ledge 4410.Each in the step-like portion of ledge 4410 causes the impetus (impulsereflection) providing filtering
Certainly, other geometries can be adopted except coil 4405 and a series of impedance step 4410.Such as, the delay line filter of Figure 44 A-N can adopt the first and second parallel lines, instead of shown single line, in every bar line, all there is step, thus produce delay line filter, here, in the second delay line, produced the ripple transmitted rearward by a series of coupler (not shown), and ripple forward and backward transmits on two lines separated.In order to add narrow-band filtering, resonance portion can be attached in delay line, such as adopts short-term and gap, as the described herein.Generally, the short delay line of employing modification ELR material described here is used can to manufacture narrow band filter more cheaply.
Figure 44 C-N shows another example of the longer zigzag path for coiling 4405, here, single loop (loop) or hair clip (hairpin) 4415 is attached in line 4405.The geometry of Figure 44 C-B can increase the miniaturization of filter.In fact, can comprise in loop 4415 and further miniaturized and filtering in Figure 44 B-N, when 4410 those similar steps, can be adopted.Usually, each impedance step causes the wave reflection forwarded, and at the local period of delay line each several part be wavelength half frequency under, passband (passband) can be there is when this effect is structurally disturbed.Such as at " MiniatureSuperconductingFilters " of the people such as N.Lancaster, IEEETransactionsonMicrowaveTheoryandTechniques, Vol.44, No.7, can find further details in 1339 (in July, 1996).
The filter similar to delay line filter is the filter based on slow wave transmission line.Usually this filter being similarly constructed the long transmission line for having complications or loop path, having the discrete inductance and electric capacity that are effectively formed along length of transmission line, this can cause this line to work to discrete or that lamped element is similar mode.This line filter is used as resonator and the impedance that the electric capacity allowing filter designer to cause along length of transmission line through the close clearance used between coplanar ground plane and transmission line (for electric capacity) and the transmission line that narrows (for inductance) and inductance are formed reduces or weakening electromagnetic transmission speed.
There is the plane lumped element filters improving ELR material
Also the miniaturization by using modification ELR manufacture of materials flat filter to realize filter, makes the device obtained form lumped element filters or play similar action.By definition, lamped element is less than its operation wavelength and lumped element filters in high frequency can be very little thus.It may be noted that because live width is narrow in realize larger density, therefore modification ELR material described here overcomes some usually relevant to conductor finite resistive losses.
With reference to figure 45A-N, the example of lamped element band stop filter comprises input and output current-carrying part 4505 and 4510, has the central conducting part 4520 separated by gap 4515 and input and output part.Figure 45 B-N shows the enlarged drawing of central conducting part 4520, it illustrates bottom current-carrying part 4525 and top current-carrying part 4530, and here, low portion comprises the finger piece 4535 upwards extended, and low portion comprises the finger piece 4540 to downward-extension simultaneously.Gap is there is to produce resonant element between finger piece.
The element of Figure 45 A-N can operate as switch, if apply bias current to enter into normal condition as all-pass filter to make filter, and resonance provides belt-resistance function.More details can be found in such as the 5th chapter in the book of N.Lancaster.
The dual mode filter of modification ELR material is adopted also to be fine.With reference to figure 46-N, show the example of dual mode filter.In a word, the bimodulus micro-strip resonantor with little perturbation has been separated the degradation modes of Received signal strength.In the example of Figure 46-N, input and output terminal 4605 and 4610 is coupled to the filter assembly comprising and be manufactured to foursquare a pair dual-mode resonator 4615 having splayed or do not gone up turning 4617.Conductor 4620 is connected to this to resonance square 4615, for Chebyshev filter response.And, add the second conductor 4625 and provide elliptic filter response.Although show the cube with turning of splaying, other geometries are also fine certainly, such as have the circle of outstanding short-term, annular, Q-RING etc.
Flat filter provides the miniaturization of improvement under certain frequency, but except the transmission line compressed, can provide the further miniaturization exceeding and use slow wave transmission line, lamped element assembly and complications movement.As mentioned above, can signal speed be reduced by the inductance increasing wire such as transmission line, not increase relevant electric capacity simultaneously.Such as by adopting dielectric layer between ground level and holding wire, adding inductance in the fields inside of the path formed by ELR material or line inside and benefiting from little external field.
And, signal speed can be reduced further for given frequency usage high-k substrate.As mentioned above, it forms the output of the substrate contribution filter of flat filter.Accurate flat filter can be manufactured by different Q factor by using a certain dielectric material for substrate.A lot of substrate is all fine.Such as, substrate can take in following form one or more, can be batch or be deposited on another substrate: amorphous or crystal quartz, sapphire, aluminium oxide, LaAIO 3, LaGaO 3, SrTiO 3, ZrO 2, MgO, NdCaAlO 4, LaSrAlO 4, CaYAlO 4, YAIO 3, NdGaO 3, SrLaAIO 4, CaNdAIO 4, LaSrGaO 4, YbFeO 3.Can select substrate be inertia, growth, deposition with the good quality path to be formed by modification ELR material or locate compatibility, and have described here needed for filtering characteristic.There is high-k and the substrate used together with existing or traditional filter can similarly for filter described here provides good substrate.
There is the acoustic wave filter of modification ELR material
Can by modification ELR materials application in some substrate, such as piezoelectric substrate, to produce surface acoustic wave (SAW) or bulk acoustic wave (BAW) device.Due to along a certain substrate surface transmission (for SAW device) or by the exponentially decay in a substrate of the sound wave of a certain substrate (for BAW device), therefore SAW and BAW device can be used as filter operations.BAW device from a surface of this material by material body or most and reach another surface, and the energy density quantity on these these surfaces of device energy minimization.SAW device is focus energy on this material surface alternatively, and this can make this device more responsive.
Acoustic wave device 4700 be illustrated in shown in Figure 47-N, it to can be applicable in filter or is used as resonant circuit.Device 4700 is BAW devices, and it comprises input line 4705 and output line 4710, and it is coupled respectively to input electrode 4715 and output electrode 4720.This line and electrode can be formed by modification ELR material described here or be comprised this material.Piezoelectric 4725 is accompanied between this electrode.This material 4725 can by quartz, lithium tantalate, lithium niobate, GaAs, carborundum, langbanite, zinc oxide, aluminium nitride, lead zirconium titanate, fluoric acid polyvinylidene or other materials.Because filter designer can based on the temperature dependency of the cutting angle selection material of quartz, therefore quartz is normally preferred.
Because the voltage be applied between electrode 4715 and 4720 causes the shearing deformation of material 4725, therefore device 4700 relates to shear mode resonator.This material resonances when producing dynamo-electric standing wave, and the material face being provided with electrode thereon maximises displacement (displacement).Although be plate-like shown in Figure 47-N, other structures are also fine certainly, such as tabular.If be configured to tabular, then device 4700 can be used as shear-horizontal acoustic plate mode (shear-horizontalacousticplatemode) sensor operations with the relatively thin piezoelectric substrate be clipped between the two poles of the earth, and one of them plate comprises interleaved converter (hereafter discussing).
In the another kind of acoustic wave device as surface acoustic wave device 4800 shown in Figure 48-N.Device 4800 comprises a pair input line 4805 and 4810 voltage being input to the input converter 4815 be formed on baseplate material 4820.Baseplate material 4820 can be formed by any one in the above-mentioned material described about the material 4725 for device 4700.By voltage is applied to input converter 4815, electric field energy is converted to the mechanical wave energy 4825 of the sound wave form propagating into the output translator 4840 with output 4830 and 4835 by input converter.Afterwards, received mechanical energy is converted back the electric field being applied to output 4830 and 4835 by output translator.Input and output transducer 4815 and 4840 can be formed as interleaved converter, it can be that the interlocking of all ELR materials as described in this of electric conducting material being applied to baseplate material 4820 surface refers to.
Distinguish sound wave mainly through its speed and moving direction, and according to being used for the material of material 4725 or baseplate material 4820, a lot of combination is all fine.(boundary condition also can affect sound wave propagation).The susceptibility of device 4700 and 4800 usually with producing by inputting, to respond to and the amount of energy carried by intermediate materials (interveningmaterial) is proportional by exporting.By using modification ELR material described here, such as, owing to largely minimizing the loss of the input and output of device, the acoustic wave device improved therefore can be realized
SAW device uses usually together with radio-frequency filter, and here, the output postponed at output reconfigures to produce finite impulse response filter or sampling filter.BAW device can be used for realizing lattice or echelon filter (ladderfilter).
There is the cavity body filter of modification ELR material
Although be usually described as above-mentioned filter to adopt the modification ELR material being deposited as multiplanar conductive path, strip trace etc., geometry needs not to be plane.On the contrary, modification ELR material can be used in multiple three-dimensional structure, the coaxial configuration of such as part, waveguide or other structures.An example is in cavity body filter, use modification ELR material, and its simple examples is in shown in Figure 49-N.Cavity body filter transmits required frequency, refuses other frequencies simultaneously, and band is logical or notch filter (notchfilter) is also like this.Cavity body filter also can be used as duplexer (duplexer).
As shown, cavity body filter 4900 comprises input and output line 4910 and 4915, is coupled respectively to input and output loop (loops) 4920 and 4925.This loop is positioned in cavity 4905, is depicted as the cylinder that previous section is cut off.Precursor also comprises resonator, is shown as center pillar (centralcylinder) 4930.Center resonators is normally by regulating element (not shown) adjustment component capacitance and impedance and between the electric capacity and the inductance in loop 4920,4925 of core 4930, produce adjustable dielectric element of required resonance thus.
Cavity 4905 contributes to comprising oscillating electromagnetic fields, but in cavity body filter 4900, loss occurs.These losses are normally due to the finite conductivity of cavity wall.By manufacturing cavity 4905 with modification ELR material described here, this loss can be reduced to a great extent, thus reduce the decay of the oscillating field produced by cavity body filter 4900.In some instances, cavity simply can be formed by the dielectric cylinder conducted electricity or be coated with the thick film formed by modification ELR material.
And two or more cavity body filters can be coupled to together and the resonator such as such as formed by the thick film of modification ELR material by coupling aperture or inside opening ring resonator is connected.This cavity body filter combined can produce more accurate filter response, such as being used by microwave filter or other wireless transmitting systems.Although illustrate that cavity 4905 has column structure, much other structures are also fine, although cylindrical modeling state (modelingbehavior) the cavity geometry more complicated than other is simpler.
And other types cavity resonator is also fine, such as dielectric resonator, here, such as cylinder 4930 is formed by dielectric material, and is coupled to modification ELR material at its base portion or is positioned on modification ELR material, all inner at cavity 4905.By reducing length and the height of cavity and being positioned at by resonator on the film that formed by modification ELR material, resonator does not need to be suspended in cavity.The cavity resonator of another kind of type is coaxial cavity resonator, spiral cavity resonator or the coplanar resonator constructing cavity by micro-band and stripline conductors.In the above-cited books of N.Lancaster, chapter 3 can find the further details about this resonator.
There is other filters of modification ELR material or suitable execution mode
Above-mentioned filter is particularly suitable for using communication network and equipment such as radio frequency, honeycomb, optics and microwave communication.As mentioned above, by adopting modification ELR material in this filter, the resistance of best common conductor under filter provides the order of magnitude to be less than condition of similarity, thus cause abnormal high filter gain-close to the gain of ideal filter.And, less and compacter mode can manufacture this filter.
In fact, can use micro-band technique on substrate, form above-mentioned a lot of filters, comprise wafer substrate, SiP substrate etc.Thus, use film fabrication techniques can manufacture a lot of filter, wherein much this has been description, and it all shares with semiconductor chip manufacture.Single layer device can be fabricated to by adopting a lot of filters of modification ELR material, and thereby simplify the treatment step for generation of this filter, thus only comprise: photoetching, ion grinding, contact metallization and section (or its equivalent process).In some instances, some minimum level manufacturing technologies can be used to manufacture chip, such as 1.3 nanometer technology, and this can leave larger space for other filters or other circuit on chip.By larger packing, based on layout or distance item, circuit designers has less restriction, and except other benefits, this allows chip design faster.
Filters more described here can single-chip integration on a single chip, there are other assemblies usually, such as RF assembly, analog circuit etc.By adopting chip upper filter, chip obviously benefits from the performance of improvement.By adopting modification ELR material in chip, except other benefits, chip enjoys larger density circuit.Such as, by adopting modification ELR material, chip can more low heat dissipation operate, and can adopt thinner line.By transmitting more small area analysis on each line, the EMF effect in adjacent lines, on filter and on other circuit can be reduced in.Also can be interconnected by the manufacture of ELR material.And, due to significantly reduce line loss consumption, therefore can when not amplifying signal transmission.
As mentioned above, modification ELR material has the performance depending on temperature.As a result, the filter described here of modification ELR material is adopted similarly to depend on temperature.Influence of temperature change field penetrates in band conductor, and it affects superconduction length of penetration, as mentioned above.Can based on this change of the respondent behavior modelling modification ELR material of temperature and modification ELR material described herein, or can from empirically obtaining.Note, by adopting modification ELR material, line circuit can be ignored, but can based on temperature adjustment circuit, as shown in the thermometer that provides at this.Therefore, adjustable filter design with compensation temperature, or exports by changing temperature adjustment filter.
With reference to figure 50-N, show the example of system 5000, it comprises the circuit 5010 being coupled to temperature-control circuit 5015, and logic 5020 (although chunk will be depicted as in Figure 50-N interconnection, connection more or less is all fine).Circuit 5010 adopts one or more filter described here, and it is formed by modification ELR material at least in part.Logic control temperature-control circuit, the cooler/freezer unit of its controlled cooling model circuit 5010 conversely.Thus, in order to increase susceptibility or the response of system 5000, logic 5020 sends signal to temperature-control circuit 5015 to reduce the temperature of circuit 5010.As a result, adopt the circuit 5010 of ELR material to cause modification ELR material to increase conductivity, thus increase circuit sensitivity or response.
Although generally described some filter at this, much other filters have also been fine.Such as, except cavity resonator mentioned above and other filters, modification ELR material can be attached in tunable filter.Modification ELR material can be implemented in garnet filter, Atomic filter or other analog filters at switching capacity filter or even.
Although show single filter, filter can combine with shaping filter group (filterbank), multiplexer or other more complicated filter system, signal connector or array.About other kind filters described here, the filter array of a lot of structure is all fine and can considers that the filter designer of the filter array that enforcement is formed by modification ELR material at least partially or multi-filter system designs it.Modification ELR material described here can be used as in the complex filters system of the combination comprising two or more filter and principle described here, even without clearly describing these combinations.In fact, this complex filters system can adopt two or more dissimilar or different types of filter, it not simply similar or congener filter, this filter system or array can comprise relatively mixing with the variety classes of kind filter or dissimilar filter of all being formed by modification ELR material, and some filters are formed by non-ELR material or different filter and combination of different materials.Thus, complex filter system or array can be adopted by two or more variety classes filters formed mainly through modification ELR material, two or more the dissimilar filters formed mainly through modification ELR material and/or the two or more filters formed by two or more dissimilar filters that two kinds of conventional conductor and modification ELR material are formed.
Although there is described herein the concrete example of the filter of the assembly that employing is partly or completely formed by modification ELR material, but it will be appreciated by those skilled in the art that, in fact any filter construction all can be taken to the assembly that small part is formed by ELR material, those such as listed above assemblies, such as thus pass to electric current, Received signal strength or transmission or amendment or adjustment electromagnetic signal.Known filter or filter system adopt conducting element and other elements widely, some of them are listed hereinbefore (although modification ELR material can use together with any conducting element in circuit, but can understand further, according to the definition of people to " conduction ", illustrate that modification ELR material promotes that energy or signal are propagated along its length or area).As a result, all possible Filter and Filltering device system of the assembly formed by modification ELR material can not be adopted by exclusive list particularly.
Although illustrate and there is described herein some suitable geometries for some filters, other geometries multiple are also fine.Except differences in material thickness, use except different layers and other three-dimensional structures, these other geometries comprise the different graphic, structure or the layout that originate in length and/or width.This present inventor expects that in fact all filters as known in the art and related system can adopt modification ELR material, and believe that those skilled in the art of each example of ELR material, filter and the principle being provided with the application are when unduly testing, can realize having other filters of the one or more assemblies formed by modification ELR material in whole or in part, although do not paying some the new advantages of situation experience these modification ELR of the present invention described here suitably made great efforts and not obvious.
In some embodiments, the filter of modification ELR material can be described below:
A kind of filter, comprising: substrate, is formed in the conductive input line on substrate, is wherein configured to by conductive input line receive input signal, be formed in the conduction output line on substrate, the output line that wherein conducts electricity is configured to the signal of output filtering, with the one or more conductive paths be formed on substrate, wherein one or more conductive paths be formed in conductive input line and conduction output line between and conductive input line and conduction output line between electromagnetic coupled is provided, wherein one or more conductive paths comprise the geometry being formed the filter function being provided for received input signal, wherein filter function is in required frequency or frequency range, wherein conductive input line, conduction output line or being formed by pole low resistance (ELR) path of modification at least partially of one or more conductive path, with, wherein modification ELR path is by comprising the ground floor of ELR material and comprising the material modified second layer being bonded to ground floor ELR material and formed.
A kind of method manufacturing filter, the method comprises: use pole low resistance (ELR) film of modification to form conductive path on substrate, wherein modification ELR film comprises the ground floor of ELR material and comprises the material modified second layer being bonded to ground floor ELR material, wherein conductive path comprises the geometry of the filter function be configured to received electromagnetic signal, and the filtering of wherein received signal is for frequency or frequency range needed at least one.
A kind of filter, comprise: be formed in the one or more conductive paths on substrate, wherein one or more conductive paths comprise the geometry being formed the filter function being provided for received input signal, wherein filter function is in required frequency or frequency range, being made up of electric conducting material at least partially in wherein one or more conductive paths, this electric conducting material is by comprising the Part I of ELR material and comprising chemical bonding to the material modified Part II of Part I ELR material and formed.
A kind of filter, comprising: substrate; With the tortuous conductive path be formed on substrate, wherein tortuous conductive path is included in multiple the turning round formed in tortuous conductive path cardinal principle continuous length and forms delay line or slow line filter, wherein tortuous conductive path comprises for providing extremely low-resistance modification pole low resistance (ELR) film to input electromagnetic signal, and wherein modification ELR film comprises the ground floor of ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
A kind of filter, comprise: at least two electric devices of serial or parallel connection coupling, wherein at least one electric device is inductance element or capacity cell, modification pole low resistance (ELR) material being configured to loop or coil shape is comprised with the energy in inductance element storage tape, wherein capacity cell stores the energy in electric field and comprises and is configured at least two, modification pole low resistance (ELR) material of conductor separately, wherein modification ELR material is by comprising the Part I of ELR material and comprising the material modified Part II being bonded to Part I ELR material and formed.
A kind of filter element, comprising: piezoelectric; Be formed in the input conductor on Part I piezoelectric; With, be formed in the output conductor on Part II piezoelectric, wherein the first and second parts are spaced the Disengagement zone providing piezoelectric, at least one wherein in input and output conductor comprises modification pole low resistance (ELR) material, and wherein modification ELR material is by comprising the Part I of ELR material and comprising the material modified Part II being bonded to Part I ELR material and formed.
Filter element, comprising: the first and second galvanic circles; Resonator; With the conductive shell for surrounding the first and second conductor circuit resonator, wherein conductive shell is configured to the electromagnetic wave of at least one frequency of resonance, at least one wherein in resonator, conductive shell and first and second galvanic circle is formed by modification pole low resistance (ELR) material at least in part, and wherein modification ELR material is by comprising the Part I of ELR material and comprising the material modified Part II being bonded to Part I ELR material and formed.
A kind of filtering system, comprise: multiple filter element, wherein each filter element comprises-is formed in the one or more conductive paths on substrate, wherein one or more conductive paths comprise and are formed as received input signal provides the geometry of filter function, wherein filter function is in required frequency or frequency range, at least part of in wherein one or more conductive paths is made up of the first material, this first material is by comprising the Part I of ELR material and comprising chemical bonding to the material modified Part II of Part I ELR material and formed, the filter function of combination is jointly provided with each in wherein one or more conductive paths.
A kind of system, comprising: antenna; Logic OR analog circuit; With at least one filter element be coupled in the middle of antenna and logic OR analog circuit, wherein filter element comprises-one or more conductive path, wherein one or more conductive paths comprise and are formed as received input signal provides the geometry of filter function, wherein filter function is in required frequency or frequency range, at least part of in wherein one or more conductive paths is made up of electric conducting material, and this electric conducting material is by comprising the Part I of ELR material and comprising the material modified Part II being bonded to Part I ELR material and formed.
The antenna of the 14th chapter-formed by ELR material
This part describes and relates to Fig. 1-36 and Figure 37-O to Figure 56-O; Therefore, all reference numbers that this part comprises all represent the element occurred in these figure.
There is described herein all kinds antenna of that adopt pole low resistance (ELR) film and material such as modification, that porose and/or other are new ELR material.For type antenna more described below, antenna comprises the substrate it forming or located film, band, paper tinsel, wire, nano wire, trace or other conductors, and here, film, band, paper tinsel, wire, nano wire, trace or other conductors adopt modification ELR.Some assembly of constructing antennas adopts the other types antenna of modification ELR material.In some instances, can based on manufacture modification ELR materials such as the application of material type, modification ELR material, the size adopting the components/elements of modification ELR material, the device of employing modification ELR material or the operational requirements of machinery.So, during the Design and manufacture of antenna, at the material based on various consideration and required operation and/or the material of manufacturing characteristics selection as basic unit's (such as unmodified ELR material) of modification LER material and/or the modified layer as modification ELR material.
Figure 37-O is the schematic diagram of antenna equivalent circuit.Equivalent electric circuit for antenna can be molded as the tandem compound (seriescombination) of radiation resistance 3702, loss resistance 3704 and reactance 3706.Such as, the reactance that can be molded short dipole antenna is as electric capacity and can be molded the reactance of minor loop antenna as inductance.Radiation resistance 3702 is regarded as equivalent resistance, makes any power dissipated all will in fact represent the power of radiation wherein.Loss resistance 3704 is caused by the conductor losses in antenna element self.
Along with antenna size (relative to length) reduces, loss resistance and radiation resistance also reduce.But radiation resistance reduces sooner.In some aspects, particularly in electronics small size antenna (electricallysmall), loss resistance than radiation resistance more in the highest flight and antenna efficiency step-down can not be put into practice.But, except other benefits, form antenna element by modification ELR material and to reduce the wastage resistance allow less antenna more efficient.
Antenna electronics is miniaturized to have a lot of rule of thumb (rulesofthumb) to consider.But the longest dimension that the most frequently used not exclusive definition is antenna is not more than 1/10th of wavelength (i.e. λ).Thus, the dipole with λ/10 wavelength, the loop with λ/10 diameter or there is flat board (patch) electronic miniaturization of λ/10 Diagonal Dimension is thought.This is defined in the middle of the various methods for constructing electronics small size antenna does not have difference.In fact, the major part work on these antenna comprises the technology selecting to be applicable to embody rule, and exploitation is integrated or the outside network mated.
In some instances, the antenna element of short dipole or minor loop antenna can be the film, band, paper tinsel, wire, nano wire, trace or other conductors that are formed or be positioned on substrate, here, film, band, paper tinsel, wire, nano wire, trace or other conductors have employed modification ELR material.The antenna being particularly suitable for modification ELR material described here is microstrip antenna, and it can be formed in the conductive trace on dielectric substrate such as printed circuit board (PCB); But, with very little magnitude and microstrip antenna can be manufactured on less substrate, even adopt semiconductor fabrication process and other nanometer technology.
Figure 38-O illustrates the sectional view defining the microstrip antenna element 3800 formed by modification ELR material at least partly, such as has ELR material base layer and the film being formed in the modified layer in basic unit.The various applicable film formed by modification ELR material is specifically described at this.As shown in the example of Figure 38-O, the modified layer 3806 that antenna element 3800 comprises ELR material base layer 3804 and is formed in basic unit 3804.On the dielectric substrate that antenna element can be formed in substrate 3802 such as printed circuit board (PCB), integrated circuit or any other dielectric material (comprising air).Ground level 3808 is arranged on the opposition side of dielectric substrate 3802.In some instances, ground level also can be formed by modification ELR material.By being formed by modification ELR material, under the temperature such as 150K, room temperature or the ambient temperature (394K) that use in higher than conventional H TS material, or at other temperature described here, antenna element 3800 is by a small amount of resistance or the electric current that is not provided to by resistance in conductive path.
Material or the size of substrate 3802 can be selected based on various factors.Such as, select baseplate material can contribute to mating input impedance and the system impedance of antenna based on its size and dielectric constant, or the bandwidth sum efficiency of antenna can be improved.It will be understood by those skilled in the art that substrate can be formed by multiple different materials and can form it into multiple difformity, realize some desirable characteristics and/or operating characteristic.
A lot of baseplate material is all fine.Such as, substrate can take in following form one or more, can be block or be deposited on other substrates: amorphous or crystalline quartz stone, sapphire, aluminium oxide, LaAIO 3, LaGaO 3, SrTiO 3, ZrO 2, MgO, NdCaAlO 4, LaSrAlO 4, CaYAlO 4, YAlO 3, NdGaO 3, SrLaAlO 4, CaNdAlO 4, LaSrGaO 4, YbFeO 3.Substrate is selected to be inertia, with growth, the deposition of good quality modification ELR material or locate compatibility.There is high-k and the substrate used together with existing or conventional aerial similarly can be provided for the good substrate of antenna described here.
Figure 39-O shows the figure of short dipole antenna, and its Corresponding matching network, formed by modification ELR material.Antenna and matching network are formed by the modification ELR material on dielectric substrate 3902.Ground level 3906 is formed on the opposite side of dielectric substrate 3902.In some instances, ground level is also formed by modification ELR material.Antenna comprises the chute (runner) 3904 being connected to system feeder line 3908 via conductive path 3910.Conductive path 3910 forms matching network and is used for dipole antenna together with stub sections 3912.Certainly, much other antennas and matching network structure are also fine, and are the considerations that designer realizes in the design of the small dipole antenna formed by modification ELR material.
Figure 40-O illustrates minor loop antenna and its Corresponding matching network, is formed by modification ELR material.This antenna and matching network are formed on dielectric substrate 4002 by modification ELR material.Ground level 4006 is formed on the opposite side of dielectric substrate 4002.In some instances, ground level is also formed by modification ELR material.Antenna comprises the loop of modification ELR material 4004, and it is connected to system feeder line 4008 via conductive path 4010.Conductive path 4010 forms the matching network being used for dipole antenna together with electric capacity 4012.Although the electric capacity of Figure 40-O is shown as discrete component, microstrip line principle also can be used to form the electric capacity of matching network.
Although above-described minor loop and dipole antenna use stripline technique to be formed on substrate, other technologies also can be used to realize the antenna structure of modification ELR material.Such as, can loop or dipole antenna be formed by modification ELR nano wire and not need to be located on substrate.
Figure 41-O, 42-O and 43-O are other examples of microstrip antenna.About above-described dipole and loop antenna, due to resistance loss, comparatively massive plate antenna is effective to cause miniaturization to be not so good as with the microstrip antenna be used as in Mobile solution.The antenna element forming modification ELR material reduces resistance loss, makes less antenna structure fully effective.Figure 41-O is the example of model microstrip plate aerial.This antenna is formed on dielectric substrate 4102, and antenna element 4104 and ground level 4106 separate by it.In the example of Figure 41-O, via edge feed network 4108 to/from antenna feed signal.It will be appreciated by those skilled in the art that, wherein, other supply network configurations such as probe also can be used to be fed to (probefeed), to insert edge feeding, to have the probe feeding in gap, to have the edge feeding in gap, two-layer feeding and aperture-coupled feeding.
Figure 42-O is the example of micro-band H antenna, and compared with common plate aerial, it is obviously less, demonstrates similar operating characteristic simultaneously.Antenna is formed on dielectric substrate 4202, and antenna element 4204 is separated from ground level 4206 by dielectric substrate 4202.In the example of Figure 42-O, be fed to H antenna by dark pin feed network 4208, but be fed to by the suitable feed network of arbitrary number.
Figure 43-O is the example of meander line antenna (meanderlineantenna).As the name suggests, this antenna element 4304 is formed as meander line on the substrate 4302 antenna element and ground level 4306 separated.Meander line antenna can be designed to very little, narrow frequency antenna or the antenna of the higher bandwidth with multiple resonance frequency can be designed to.
Certainly, much other antennas and matching network structure are all fine, and are realize being the consideration in design the antenna that formed by modification ELR material for designer.In fact, the principle controlling the design of conventional aerial and matching network can be used for producing the antenna adopting modification ELR material described here.Thus, although show some antenna geometries, much other structures are also fine certainly.
Although be usually described as electronics small size antenna above, originally the present invention includes the antenna of any type, need not to be the small-sized miniature antenna of electronics.Such as, above any antenna described in (with hereafter) can have the conductor length formed by modification ELR material at least partly.Alternatively or additionally, along conductor length or along the elongated structure of any rigidity with the geometry providing antenna function necessary, can be formed or coating modification ELR material.This structure can be formed by electric conducting material, dielectric material or conduction and dielectric material.
Although illustrate for some antennas and there is described herein some suitable geometries, much other geometries are also fine.Except differences in material thickness, use except different layers and other three-dimensional structures, these other geometries comprise about length and/or width different graphic, structure or layout.
There is the resonant antenna of modification ELR material
Resonant antenna is the antenna of operation very well under single-frequency or narrow range frequency.Resonant antenna normal length is in the scope of wavelength half.As mentioned above, when compared with the miniaturized version of self, electronics large-scale antenna relative efficiency.The resonant antenna be made up of conventional conductive material is more effective than the miniature antenna used under same frequency.But, still by implementing with modification ELR material or revise resonant antenna structure to realize improvement in performance, such as more firing frequency or stronger gain.
Can with the structure structure resonant antenna of almost unrestricted quantity.Such as, similar to the antenna discussed with reference to figure 41-O to Figure 43-O above, microstrip antenna can operate under characteristic frequency as resonant antenna, and here, the resonance frequency of antenna depends on the size of antenna element.
Except substrate, in some instances, resonant antenna is formed by wire, or is formed by other conductors be not formed on substrate.Figure 44-O is the dipole antenna exemplary plot formed by modification ELR material.The antenna example of Figure 44-O comprises two open circuit conductors 4402 and 4404, is formed, be coupled with feed network (not shown) by modification ELR material.In some instances, half-wave dipole can be formed by plain conductor, and length is the half of wavelength, and here, feed network is coupled in central spot with conductor.In other examples, by changing the effect of antenna radiation pattern, the length of a conductor or multiple conductor can be adjusted relative to wavelength.
Figure 45-O is the figure of the V-dipole aerial example formed by modification ELR material.V-arrangement dipole is formed by two open circuit conductors 4502 and 4504 such as open circuited transmission line, relative to each other locates conductor with angle 4506 here.Figure 46-O is the figure of the folded dipole example formed by modification ELR material.Folded dipole is formed by the plain conductor 4602 of narrow annular.
Certainly, much other antenna structures are also fine, and it is also the consideration in design for the resonant antenna that designer implements to be formed by modification ELR material.In fact, the principle controlling the design of conventional aerial and matching network can be used for producing the antenna adopting modification ELR material described here.Thus, although show the geometry of some antennas, much other structures are also fine certainly.
There is the antenna of modification ELR material
In wide range of frequencies, the broad-band antenna of valid function also can be benefited from and be formed by modification ELR material.About other antennas discussed above, broad-band antenna stands the loss owing to causing for the formation of the material resistance of antenna element.Loss in the antenna element of the broad-band antenna normally function of frequency and the validity of antenna under limiting low frequency.If reduced the resistance of antenna element by the antenna element forming modification ELR material, then more wide frequency ranges internal antenna is more effective.
Figure 47 A-O is the figure of band shape (ribbon) the dipole antenna example formed by modification ELR material.That banded dipole comprises wide a pair of being connected to transmitter/receiver/transceiver 4706, smooth conductor 4702 and 4704.Conductor width improves the beamwidth of antenna of above-described conventional dipole antenna.In some instances, conductor width alterable, further improves the beamwidth of antenna.Such as, the Bow―tie antenna (bowtieantenna) of Figure 47 B-O comprises when more away from becoming wider pair of conductors 4712 and 4714 during transmitter/receiver/transceiver 4716.Effective bandwidth that is banded and Bow―tie antenna is increased by forming antenna element with modification ELR material.In some instances, antenna element is formed on dielectric substrate described herein.
Other structures of antenna element also improve bandwidth.Such as, the helical antenna of Figure 48-O comprises a pair complimentary antennas element 4802 and 4804, and it produces pole wide bandwidth.About other broad-band antennas discussed herein, further increase effective bandwidth by forming helical antenna element by modification ELR material.
Certainly, about other antennas classification discussed herein, a lot of structures of broad-band antenna are all fine and it is the design consideration implementing the broad-band antenna formed by modification ELR material for designer.In fact, the principle controlling conventional broadband Antenna Design can be used for producing the antenna adopting modification ELR material described here.Thus, although show some antenna geometries, much other structures are also fine certainly.
There is the aperture antenna of modification ELR material
Benefit from and to be formed by modification ELR material or another antenna structure that part is formed by modification ELR material is aperture antenna.The part-structure of aperture antenna is the antenna aperature that electromagnetic wave passes through.The ripple by aperture collected by aperture antenna as receiver operation.Usually, aperture antenna is the sky line options of the application needing very high-gain.About other antennas discussed herein, the material resistance for the formation of antenna structure causes conventional aperture antenna to bear ohmic loss.Form antenna structure by modification ELR material and reduce these ohmic losses and the efficiency that improve antenna.
Figure 49-O is the sectional view being formed antenna aperature by modification ELR material.Antenna aperature 4902 is limited by ELR material base layer 4904 and the modified layer 4906 be formed in basic unit.Although the antenna aperature 4902 in the example of Figure 49-O is depicted as rectangle, those skilled in the art can understand and based on known design principle, antenna aperature can be defined as other geometries.
Figure 50-O is the sectional view of the antenna aperature that part is formed by modification ELR material.In the example of Figure 50-O, antenna aperature 5002 is limited by conventional material 5004, such as aluminium or dielectric layer.Because electromagnetic wave is at antenna aperature internal communication, therefore antenna aperature can form lining (line) to reduce the ohmic loss relevant to conventional material by modification ELR material.The modified layer 5008 that modification ELR material comprises ELR material base layer 5006 and is formed in basic unit.
(do not illustrate in addition) in some instances, the modification ELR material of different structure can be used.Such as, about Figure 49-O, interchangeable ELR material base layer 4904 is relative to the location of modified layer 4906.In other words, in these examples, basic unit 4904 can be arranged on the inside of antenna aperature and modified layer 4906 can be arranged on the outside of antenna aperature.Similarly, the location about Figure 50-O, ELR material base layer 5006 can exchange with modified layer 5008.
Figure 51-O is the figure of horn antenna (hornantenna) example formed by modification ELR material at least partly, as described in Figure 49-O and 50-O.Waveguide 5106 side being fed to horn antenna by enlarging (flaring) forms the antenna aperature 5102 of the horn antenna of Figure 51-O, to form bugle cross section 5104.In the example of Figure 51-O, enlarging waveguide in the two directions.But, in other examples, can only enlarging waveguide in one direction, on other direction, keep waveguide dimensions simultaneously.The ohmic loss that other shapes of aperture antenna and structure also can be benefited from by being formed to the antenna realization that small part is formed by modification ELR material reduces.
The another type aperture antenna that the loss benefiting from the structure forming modification ELR material reduces is reflecting antenna.Reflector aerial system is used in usually to be needed in the application of high-gain.Figure 52-O is the sectional view of the reflecting antenna formed by modification ELR material.This antenna system comprises reflector 5202 and feed antenna 5204.Feed antenna can be a lot of type antenna, such as, be any one wherein in antenna element described here, wherein any one all can be formed by modification ELR material or with as lining.In some instances, reflector is formed by modification ELR material completely.In other examples, as shown in Figure 52-O, reflector is using modification ELR material layer 5206 as lining.
Certainly, about other classifications discussed herein, a lot of apertures antenna structure is all fine, and is the design consideration that designer implements the aperture antenna formed by modification ELR material.In fact, the principle controlling the design of conventional broadband antenna can be used for producing the antenna adopting modification ELR material described here.Thus, although show some antenna geometries, much other structures are also fine certainly.
There is the aerial array of the antenna element formed by modification ELR material.
Usually, multiple antenna element configuration become array to produce the radiating pattern meeting specific purpose.Such as, Figure 53 A-O is the figure of plate aerial (patchantenna) array example.This array comprises the plate aerial 5302-5308 formed by modification ELR material.The array of plate aerial 5302-5308 is fed to by feed network, is illustrated schematically as 5310.Similar to plate aerial, feed network can be formed by ELR material.In some instances, feed network be formed in any conduction, semiconductor or insulation substrate on, as can be appreciated.
Figure 53 B-O is fed to the antenna element 5312 that formed by modification ELR material and residue element 5314-5320 is used as the figure of the Yagi-Uda of the parasitic resonators of the radiating pattern of change feed antenna.In some instances, one or more parasitic antenna 5314-5320 is formed by modification ELR material.
In some instances, control logic and feed network can be used for controlling the element of active aerial array or are sent to the phase place of signal and the amplitude of each antenna element, to revise the radiating pattern of antenna, and do not need physically to change aerial array.Figure 54-O is the block diagram of the aerial array with the assembly formed by modification ELR material.System 5400 comprises the array of antenna 5402, the feed network 5404 of feed antenna array, control logic 5406 and memory 5408.
Aerial array can be the one in polytype.Two main Types aerial arrays comprise beam switchover smart antenna (switchedbeamsmartantenna) and adjustable array smart antenna (adaptivearraysmartantenna).Beam switchover system uses multiple predetermined fixed beam figure.Control logic 5406 judges use at any given point in time or access which wave beam based on system requirements.Adjustment array allows antenna guide wave beam to interested any direction, resets interference signal simultaneously.So-called arrival direction (DOA) appraisal procedure can be used to assess beam direction.
In some instances, all antenna elements of forming array are all uniform on geometry, and in other examples, the variable geometry of antenna element.Similarly, the relation alterable between antenna element in an array.Such as, antenna element can be arranged to linear array, planar array, conformal array or cubical array.The structure of antenna element or geometry are that designer implements aerial array to realize the design consideration of required radiating pattern.
By feed network 5404 to/from aerial array 5402 feed signal.Feed network 5404 can comprise active and passive component to realize required radiating pattern by array.Such as, feed network 5404 can comprise finite impulse response (FIR) (FIR) sublevel delay line filter (tappeddelaylinefilter).If which reduce required and reality form error between beam pattern, then the weight of FIR filter can appropriate change, and for providing optimum waveform.The typical algorithm performed by FIR filter is steepest descent, and least mean square algorithm.
Again, about other antenna systems discussed herein, a lot of antenna array structure is all fine, and is the design consideration that designer implements the aerial array formed by modification ELR material.This array can comprise the relatively similar antenna all formed by ELR material, or the inhomogeneity mixture of dissimilar antenna, some antennas formed by non-ELR material, or different antennae and combination of different materials.Similarly, other assemblies a lot of of modification ELR material implementation system 5400 can be used.Certainly, although show the geometry of some antennas, much other geometries are also fine certainly.
There are matching network and other embodiments of modification ELR material
If any antenna match its be used as transmitter/receiver for system all can more effectively and actual.In order to electronic device antenna match connected to it, use matching network to revise the impedance of antenna structure, thus the impedance of matching system.Along with antenna is more and more less, antenna reactance is increasing.When combining with the small resistance value compared with miniature antenna, large reactance value makes miniature antenna be difficult to mate with system impedance.But, the matching network formed by modification ELR material all as described in this these, the coupling of miniature antenna can be improved to a large extent.
In some instances, at the temperature between the transition temperature and room temperature of conventional H TS material, adopt described here any structure of modification ELR material can provide low-down resistance for electric current.In some instances, at the temperature being greater than more than 150K described here, adopt described here any structure of modification ELR material can provide pole low resistance for electric current.In these examples, for concrete modification ELR material, this structure can comprise for cooling structure element to the suitable cooling system (not shown) of critical temperature.Such as, cooling system can be such system, and it at least can cool ELR material in this structure to such as similar to liquid fluorine Leon temperature, or other temperature described here.That is, can based on the type of the modification ELR material used in the structure shown here and structure choice cooling system.Also there are other considerations selecting cooling system, the quantity of power such as dissipated in the structure shown here.
In some instances, the concrete modification ELR material that the application adopts at temperatures lower than ambient temperature demonstrates in extremely low-resistance application, and some or all in system described here and equipment all can adopt low cost cooling system.As discussed in this, in these examples, application comprises cooling system (not shown), such as cools the system of modification ELR material to the temperature similar to liquid fluorine Leon temperature or other temperature discussed herein.Based on type and the structure choice cooling system of the modification ELR material of the application's employing.
Except system described here, equipment and/or application, those skilled in the art will recognize that other system, equipment and the application comprising antenna can utilize and form antenna by modification ELR material described here.Such as, Figure 55-O is the block diagram of the mobile device comprising the antenna formed by modification ELR material.Mobile device described here is the explanation of a kind of type wireless device that wherein can perform this technology, and other wireless devices also can be used for implementing this technology.Such as, mobile device can comprise cell phone, smart phone, personal digital assistant (PDA), portable mail equipment (such as equipment), portable electronic device (such as apple iPod ), desk-top or flat computer (such as apple ), notebook computer, notebook computer, e reader or there are other equipment any of wireless communication capability.
Mobile device 5500 comprises display 5510.In some embodiments, display 5510 comprises touch sensitive display, and it allows the data of direct control display.Mobile device 5500 has multi-functional input module 5504 to operate mobile device, navigation indicator (navigatethedisplay), and performs selection on arbitrary data.Any other input module that input module 5504 can be such as keyboard, mouse, trackball, touch sensitive display or user can be passed on to select.In addition, mobile device 5500 adopts the ELR antenna system 5506 formed by modification ELR material to send and to receive the information on wireless network.Antenna system 5506 can be coupled with receiver, transmitter or transceiver (not shown).Although not shown, this equipment can comprise other assemblies of compact power, memory, logic and this Device-General.
Above-described antenna is particularly suitable for use in communication network and equipment, such as radio frequency, honeycomb, optics and microwave communication.As mentioned above, by adopting modification ELR material in this antenna, under condition of similarity, this antenna provides magnitude to be less than the resistance of the best or normal conductor, thus causes abnormal high antenna gain-close to the gain of ideal antenna.And, this antenna can be manufactured in less and compacter mode.
In fact, can use micro-band technique on the substrate comprising wafer substrate, form above-described a lot of antenna.Thus, use a lot of antenna of film fabrication techniques manufacture, wherein much all there is described herein, and it all shares with semiconductor chip manufacture.Can be fabricated to monolayer device by adopting a lot of antennas of modification ELR material, and thus, the treatment step simplified for generation of this antenna extremely only comprises: photoetching, ion grinding, contact metallization and section (or its equivalent).
Another using the equipment 5600 of antenna described here is illustrated in shown in Figure 56-O.This equipment comprises the antenna 5602 being coupled to RF circuit 5604.RF circuit can comprise such as receiver, transmitter, transceiver, signal generating circuit, modulator, demodulator etc.This equipment also comprises logic 5606 and memory 5608.Can this equipment 5600 be manufactured on a single chip, and it such as can form RFID chip (alternatively, antenna 5602 can be formed in the multi-chip antenna on substrate such as printed circuit board (PCB), have formation on the substrate, with this substrate interconnect or the assembly 5604,5606 and 5608 as chip or circuit by this base plate carrying).
By adopting core on-chip antenna, this chip obviously can benefit from augmented performance.By using modification ELR material in chip, except other benefits, this chip can enjoy larger current densities.Such as, by adopting modification ELR material, this chip can have less hear rate, and owing to can transmit more multiple current on every bar circuit, therefore can adopt thinner circuit.Circuit and interconnection can be manufactured by modification ELR material.And, owing to significantly reducing line loss, therefore can when not amplifying signal transmission.And manufacture chip by minimum level manufacturing technology such as 1.3 nanometer technology, this technology can reserve greater room for one or more antenna on chip.By transmitting less electric current on every bar circuit, the EMF effect on adjacent lines such as other circuit can be reduced in.By larger density, circuit designers has the less restriction based on layout or distance item, and except other benefits, this can allow chip design faster.
Adopt partly or the concrete example of the assembly formed by modification ELR material exclusively although there is described herein, but it will be appreciated by those skilled in the art that, in fact any antenna structure all can be taken to the assembly that small part is formed by modification ELR material, such as assembly listed above, such as, for conduction current, reception wireless signal or transmitting (transmit), transmission or change electromagnetic signal.
Various antenna and antenna system adopt conducting element and other elements widely, and some of them are listed hereinbefore.As a result, all possible antenna adopting the assembly formed by modification ELR material and antenna system can not very at large be listed.Although show for some antennas and there is described herein some suitable geometries, much other geometries are also fine.Except material thickness difference, use except different layers and other three-dimensional structures, these other geometries comprise different graphic, structure or layout about length and/or width.The present inventor contemplates in fact all antennas as known in the art and related system can adopt modification ELR material, and believe that the those skilled in the art of each example providing ELR material, antenna and principle in the disclosure are not when carrying out undue experimentation, other antennas with the one or more assemblies formed by modification ELR material in whole or in part can be implemented.
And although highlight particular antenna system in this description how to use the specific components formed by modification ELR material, these examples of modification ELR material mean schematically, and non exhaustive.The those skilled in the art providing each example in the disclosure can identify other assemblies in the same or similar antenna system that can be formed by modification ELR material.
And it will be understood by those skilled in the art that this present inventor contemplates modification ELR material and can be used on during combined antenna provides, this combined antenna system comprises the combination of two or more antenna described here and principle, even without clearly describing these combinations.In fact, this combined antenna system can adopt two or more dissmilarity or different types of antenna, but not simply similar or similar antenna.
In some embodiments, the antenna comprising modification ELR material is described below:
A kind of system, comprising: receiver, transmitter or transceiver; And with at least one antenna element of this receiver, transmitter or transceiver couples, wherein at least one antenna element is formed by modification pole low resistance (ELR) material, has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
A kind of structure, comprising: multiple antenna element; And the feed network to be coupled with multiple antenna element, at least one antenna element wherein in multiple antenna element is formed by modification pole low resistance (ELR) material, has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
A kind of structure, comprising: dielectric substrate; With the wideband antenna element be arranged on dielectric substrate first side, wherein antenna element is formed by modification pole low resistance (ELR) film, has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
A kind of structure, comprising: dielectric substrate; With the resonant antenna element be arranged on dielectric substrate first side, wherein antenna element is formed by modification pole low resistance (ELR) film, has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
A kind of structure, comprising: dielectric substrate; With the electronics small antenna element be arranged on dielectric substrate first side, wherein antenna element is formed by modification pole low resistance (ELR) film, has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
A kind of aperture antenna, comprising: the conductive surface forming aperture, and this aperture has feed terminal and spoke side; And the feed network to be coupled with the feed terminal in aperture, wherein conductive surface comprises modification pole low resistance (ELR) material, has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
The energy storage device of the 15th chapter-formed by ELR material
These chapters and sections of this description relate to Fig. 1-36 and Figure 37 0P to Figure 43-P; Therefore, all reference numbers that this part comprises all represent the element found in these accompanying drawings.
There is described herein adopt pole low resistance (ELR) material such as modification, various types of energy storage devices of with holes and/or other new E LR materials.Although describe each example of the present invention with reference to the various structures (such as modification ELR film etc.) of " modification ELR material " and/or modification ELR material, but will understand, the ELR material of any improvement described here can be used, such as, comprise modification ELR material (such as modification ELR material 1060 etc.), ELR material with holes and/or other the new E LR materials according to each side of the present invention.As the described herein, in every respect, these ELR materials improved have at least one operating characteristic improved, and in some instances, it operates under comprising the temperature higher than 150K under ELR state.
Specific descriptions are comprised various types of energy storage devices that are modification, with holes and/or other new E LR materials now.Generally, a lot of structures of energy storage device are all fine.In fact, the principle of the design and structure that control regular power memory device can be used for designing the energy storage device adopting modification ELR material described here.Thus, although illustrate and describe some energy storage devices and structure at this, much other structures are also fine certainly.And, although highlight particular energy memory device in this description how to use the specific components formed by modification ELR material; But these examples of modification ELR assembly mean illustrative and non-exhaustive.The those skilled in the art providing each example in the disclosure can identify same or similar energy storage device/other assemblies intrasystem that can be formed by modification ELR material.
Figure 37-P shows the block diagram with the energy storage system 3700 being formed or combined at least partly the assembly of modification ELR material by modification ELR material.Energy storage system 3700 can adopt energy storage device 3710, and it is configured to the energy receiving and store from external power source 3720.Power or energy are sent to energy storage device 3710 via circuit 3722 from external power source 3720.After passing through energy regulating system 3730 alternatively, the energy stored is provided to load 3740 by circuit 3724.
In this example, external power source 3720 can be power supply or the energy source of any appropriate, its other rotating machineries including but not limited to power or power network, magnetic generator, solar cell or solar panel, photovoltaic (PV) battery or photocell (photoelectriccell), transformer, wind turbine (windturbine), hydroelectric generator, thermoelectric generator, flywheel or be used as generator, and/or other types renewable/non-renewable energy resources.The further details relating to the energy generation apparatus providing energy to energy storage device 3710 is hereafter discussed.
Energy storage device 3710 can be power or the energy storage device of any appropriate, and it includes but not limited to the storage of battery, power cell, capacitor, super capacitor, flywheel, magnetic energy, SMES etc.In some instances, also will understand, energy storage device 3710 is rechargeable memory devices, and its power can outflow and be supplemented by power supply 3720 afterwards.In some instances, system 3700 is configured to from single external power source 3720 received power and stored energy is sent to individual equipment/user.In other examples, system 3700 comprises and to be configured to from multiple different external power source 3720 received power or energy and in the power network stored the energy in the distributed architecture of array, net or energy storage device 3710 or array.Stored energy is sent to required arbitrary number user/equipment afterwards.
Optional energy regulating system 3730 is configured to the power stage of amendment or adjustment energy storage device 3710 (as required) with corresponding load 3740.Such as, energy regulating system 3730 can be used for stored DC current conversion to become AC electric current.Before energy regulating system 3730 is used in and transfers the energy to load 3740, multiple difference amendment is performed to stored energy.In an example again, system 3700 can not comprise energy regulating system 3730.Load 3740 can be multiple distinct device, equipment or need in the instrument of electrical power or electric energy any one.Load 3740 such as can comprise the combination, power network etc. of single equipment (such as mobile phone, smart phone, kneetop computer, panel computer or other portable electric appts, computer, TV or other power driven equipment), family or factory, family or corporations.To understand, for each application that wherein will adopt energy storage device, energy system design is very concrete, and characteristic application, and desired structure and setting and other factors drive value and the quantity of the assembly adopted in this system.Thus, owing to being different between each application and each equipment, the particular type and the quantity that do not need assembly in the description herein is therefore caused.
Generally, energy storage system 3700 can comprise each assembly formed by modification ELR material in whole or in part.ELR assembly can be configured to conduction current, is transformed by signal or converts electromagnetic signal to, or transforms or conversion (such as comprising electric current and voltage) from electromagnetic signal, or transmits in addition or amendment electromagnetic signal.Such as, one or more assemblies in energy storage device 3710, external power source 3720, transmission line 3722 and 3724, energy regulating system 3730 and/or other associated components can comprise the feature formed by nano wire, band or paper tinsel further, and this nano wire, band or paper tinsel are formed by modification ELR film or modified film ELR film.
As previously mentioned, external power source 3720 is configured to power or energy are sent to energy storage device 3710.In some instances, as mentioned above, power supply 3720 can comprise equipment such as wind turbine, PV battery, hydroelectric generator etc., and it is configured to catch energy and caught power conversion is become electric energy, and it is sent to energy storage device 3710 subsequently.In some instances, for electric energy being sent to being formed by modification ELR material at least partially in the transmission line of energy storage device 3710 and/or other assemblies.
Although there is described herein the concrete example of the energy storage device adopting the assembly formed by modification ELR material, but it will be appreciated by those skilled in the art that, in fact arbitrarily energy storage device structure can adopt assembly such as those assemblies listed above formed by modification ELR material, such as with conduction current, signal transformed or converts to electromagnetic signal (such as comprising curtage) or transform or conversion from electromagnetic signal, so that stored power conversion is become electric energy, or transmit in addition to/from energy storage device or revise electromagnetic signal.Other elements that known energy storage system adopts conducting element widely and lists at this.As a result, exhaustive list all possible energy storage device/system of the assembly formed by modification ELR material can not be adopted.But, the present inventor contemplates all energy storage devices in fact as known in the art all various degree can adopt modification ELR material, and believe that those skilled in the art in each example providing the ELR material in the disclosure, energy storage device system and relative theory are when unduly testing, other energy storage devices or system can be implemented, there are the one or more assemblies formed by modification ELR material in whole or in part.
And highlight particular energy memory device/system and how to use although hereafter describe the specific components formed by modification ELR material, these examples of modification ELR assembly mean schematic and non-exhaustive.The those skilled in the art providing each example in the disclosure can recognize same or similar energy storage device/other assemblies intrasystem that may be formed by modification ELR material.
And it will be understood by those skilled in the art that the present inventor contemplates ELR material and can be used in energy composite energy storage system, it comprises the combination of two or more discrete energy storage device and principle described here, even without clearly describing these combinations.
In the accompanying drawings, the lateral dimension of each element of description or the size of assembly and each layer and thickness be not must by size provide and each element can be zoomed in or out arbitrarily to improve identification degree.And, extract component detail in the accompanying drawings, thus when this details for specific descriptions of the present invention and unnecessary time, some eliminating between the precise geometry of details such as assembly or location and this assembly accurately connects.When this details to understand the present invention and unnecessary time, shown typical geometry, interconnection and structure mean and general design or operating principle are described, instead of detailed.
The concrete modification ELR material adopted in the application demonstrates in extremely low-resistance application at temperatures lower than ambient temperature, and some or all systems described here and equipment can adopt low cost cooling system.As the described herein, the application can comprise the system that cooling system (not shown) such as cools extremely similar to " liquid fluorine Leon " boiling point temperature of modification ELR inductor, the extremely temperature similar to aqueous fusion point or other temperature discussed herein.The type of the modification ELR film that can adopt based on the application and structure choice cooling system.
In energy storage device, use modification ELR material can obtain a lot of benefit.Such as, in energy storage device, use modification ELR material to replace HTS material can eliminate or reduce the complexity of the necessary cooling system of this energy storage device of operation, this can reduce its size, weight and realization and running cost.And, compared with HTS material, at higher (non-cryogenic) temperature, modification ELR material can demonstrate stronger and more nuances the sub-susceptibility of temperature and light, it can provide the thermoelectricity of improvement, photoelectricity and other conversion characteristics at relatively high temperatures for this.And modification ELR material can show stronger susceptibility to electromagnetic input signal and/or detect more low current and/or more low-voltage.In addition, modification ELR material can carry electromagnetic signal (such as input, centre or output current or the voltage) distance farther compared with conventional conductor by less resistance loss, this can cause amplifying these signals compared with low noise or less needs, and/or allows reduced-current grade or have comparatively wide arc gap between the assembly of energy storage system.In general, conventional conduction and circuit element such as copper conductor and conventional capacitor and inductor is replaced to reduce resistance loss with modification ELR material, this can improve the operating efficiency of energy storage device, the heat cut the waste, and/or improve other operating characteristics such as stability, operation lifetime, fund or manufacturing cost, size, weight, characteristic size and reliability etc.Such as, in each assembly of energy storage device, modification ELR material is used to operate with can allowing these assembly betterization.The performance of betterization realized by these assemblies can improve the overall performance of energy storage device conversely.
Battery
Figure 38-P is the schematic diagram of the battery 3800 adopting modification ELR material.Battery 3800 such as comprises the battery with one or more electrochemical cell, and it converts stored chemical energy to electric energy.More specifically, battery 3800 comprises the negative electrode 3810 and anode 3820 that are separated by electrolyte 3830.Battery 3800 can comprise the battery of battery that electrochemical cell/non-charges again or secondary battery cell/can again charge.Battery 3800 can comprise lead-acid battery, alkaline battery, carbon zinc battery, NiMH battery, NiCad battery, lithium ion battery, lithium ion polymer battery or other suitable batteries.To understand, although illustrate only single basic battery (basicbattery), much other different structure batteries are all fine.In fact, battery 3800 can comprise the battery of any type for stored chemical energy being converted to electric energy (such as, by rechargeable battery in portable or battery pack, be used in the battery in vehicle or battery pack, the extensive array etc. used together with public utilities or power network (utilityorpowergrid)).
One or more assemblies (such as coil etc.) of battery 3800 can be formed by nano wire, band or the paper tinsel formed by modification ELR film or modified film ELR film.The various application utilizing modification ELR material described here to can be battery 3800 various advantage and benefit to be provided and wherein to have employed battery 3800.Such as, the battery 3800 comprising modification ELR material demonstrates the resistance loss low compared with conventional batteries, and by the energy loss of minimise battery 3800 inside, this greatly can affect manufacturing cost.It is also envisioned that battery 3800 has the better energy conversion efficiency of conventional batteries not comprising modification ELR material.
As previously mentioned, the design of energy storage device is very concrete for wherein adopting the application of energy storage device, and application-specific, desired properties characteristic and other factors drive design and the structure of battery 3800.Thus, owing to having any different between various application and between various equipment, therefore do not needing the particular value and the number that describe assembly at this.The present inventor's expection all types battery in fact as known in the art all can adopt modification ELR material, and believe that the those skilled in the art providing each example of principle in ELR material, battery and the application are not when carrying out undue experimentation, can realize having the multiple different batteries 3800 of the one or more assemblies formed by modification ELR material in whole or in part.
Fuel cell
Figure 39-P is the schematic diagram of the cell of fuel cell 3900 with the one or more assemblies formed by modification ELR material.Cell of fuel cell 3900 such as comprises anode 3910, negative electrode 3920 and the electrolyte between anode 3910 and negative electrode 3,920 3930.Cell of fuel cell 3900 is the electrochemical cell reactant (reactant) from external source being converted to electric energy.Realize this conversion process of energy thus consumption reaction thing via electrochemical reaction, get rid of accessory substance, and discharge or consumption of calorie.Cell of fuel cell 3900 be configured to fuel and oxidant available time with regard to ongoing operation with generation current.In some instances, pure hydrogen, hydrocarbon, ethanol and hydrazine are all fuel, and pure oxygen and air are oxidants simultaneously.But, in other examples, dyestuff and/or the oxidant of other types can be used.
Cell of fuel cell 3900 can comprise the fuel cell of any type that make use of modification ELR material.Cell of fuel cell 3900 such as can comprise the fuel cell of polymer dielectric film (PEM) fuel cell, Proton Exchange Membrane Fuel Cells, direct methanol fuel cell and alkaline fuel cell, phosphoric acid fuel cell, regeneratable fuel cell or other suitable type.Cell of fuel cell 3900 can be used in various distinct device and application, include but not limited to, vehicle is car, bus, ship, train and aircraft such as, and portable electric appts such as cell phone and kneetop computer, facility be hospital, bank, police office, waste water treatment plant, signal tower (celltower) and other electric communication systems etc. such as.
As previously mentioned, one or more features of cell of fuel cell 3900 can be formed by nano wire, band or the paper tinsel formed by modification ELR film or modified film ELR film.The various application utilizing modification ELR material described here to can be cell of fuel cell 3900 and wherein to have employed cell of fuel cell 3900 provide various advantage and benefit.Because fuel cell electrochemically obtains energy and not combustion fuel, therefore comparatively combustion system is more efficient substantially for fuel cell.And, can predict comprise modification ELR material cell of fuel cell 3900 comparatively conventional fuel cells more effectively operate, by minimizing the energy loss of cell of fuel cell 3900 inside, this can affect running cost further.Thus, wish that cell of fuel cell 3900 provides the equipment of high efficiency, low or zero discharge.
Flywheel
Flywheel is configured to rotate and the mechanical energy memory device being rotation function by stored energy with very high speed.In order to use this energy, generator converts the kinetic energy be stored in rotary flyweights (spinningflywheel) to electric current.Similarly, by using electric current to accelerate rotary flyweights, other energy can be added in this system.Compared with other types energy storage device, flywheel is efficiently (such as, a lot of flywheel all has the energy efficiency up to 90%), needs to need on a small quantity or not to safeguard, and has high-energy-density.
Figure 40-P is the schematic diagram of the example of the energy storage system 4000 comprising flywheel 4010, and this flywheel 4010 has the assembly formed by modification ELR material.In this example, flywheel 4010 is installed in vacuum chamber or shell 4020 and is also operationally coupled to motor/generator 4030.Motor/generator 4030 is configured to drive flywheel 4010.This system 4000 optionally comprises and is configured to before system 4000 is by power or energy I/O, amendment or reconcile the power regulating system 4032 of power stage of flywheel 4010.
This system 4000 also can comprise magnetic bearing (magneticbearing) (the schematically showing) that be made up of modification ELR material at least partly.In one example, the lower surface of flywheel 4010 is carried on the permanent toroidal magnet of process above bearing.Magnetic bearing is via magnetic suspension but not via any mechanism support flying wheel 4010.And, wish that modification ELR material blocks magnetic field makes this system 4000 can provide flywheel 4000 in shell 4020 usually without rubbing and stable floating (levitation).Thus, by using modification ELR material described here, owing to greatly minimizing friction, magnetic hysteresis and/or eddy current, therefore can realize being close to desirable energy efficiency by this system 4000.
Flywheel can be used in the various different application such as comprising extensive grid energy storage system.Such as, flywheel can be combined with a lot of type regenerative resource (such as wind energy, solar energy, water energy etc.), to contribute to overcoming the fluctuation relevant to this energy and inconsistent problem usually.When producing electric energy by wind, such as, usually there is excessive power about the demand under windy conditions.For wind farm application, too much energy can be stored in as rotatable kinetic energy in flywheel, and is released to electric energy when demand is greater than produced energy (power).In the application that flywheel also can be used on other load balancing multiple with the other types energy or other related application.As discussed above, compared with conventional flywheel, the obvious improvement adopting the use of the flywheel of modification ELR material described here can cause efficiency and operating characteristics can be predicted.
Magnetic energy stores (MES)
In some instances, energy storage device such as SMES system and other magnetic-memory systems can use modification ELR inductor described here.Magnetic energy storage ci is configured to stored energy in raw magnetic field of being miscarried by the DC in subcooled superconductor coil.Figure 41 A-P is such as the schematic diagram that the energy storage system 4100 with the assembly formed by modification ELR material is shown.Energy storage system 4100 comprises the memory module 4110 with inductor coil 4115 or multiple coil and the power regulating system 4120 with inverter/rectifier 4125.Memory module 4110 is stored energy in the magnetic field that the inductor 4115 by being formed by modification ELR material produces.Power regulating system 4120 from memory module 4110 received energy, can regulate the energy (the DC electric current that such as inversion stores is AC electric current) received, and regulated energy is provided to each source such as power apparatus 4130.It will be understood by those skilled in the art that energy storage system 4100 can be implemented in other application a lot of do not described at this and equipment.
Figure 41 B-P is the schematic diagram of another example of the energy storage system 4150 adopting the one or more assemblies formed by modification ELR material.In this example, energy storage system 4150 comprises the transformer 4152 being configured to the introducing/output signal regulating or be modified to system 4150.This transformer 4152 can comprise the one or more assemblies formed by modification ELR material.This system 4150 also comprises power regulating system 4154 (such as inverter/rectifier).System 4150 also comprises magnetic energy storage device 4160 and the cooling package/cryostat 4166 of the stored energy magnetic coil 4162 being positioned in shell 4164 inside.Coil 4162 such as can completely or partially be formed by modification ELR material.Shell 4164 is configured to containing magnetic field (such as Lorentz force etc.) and can comprises other supporting constructions/assembly (not shown).In some instances, system 4150 be embedded in underground at least partially.Cooling package 4166 is optional assemblies and be configured to hold-in winding 4162 and be in temperature required in system 4150.In other examples, the feature that system 4150 can comprise different characteristic sum or system 4150 can have different configuration.
Conventional SMES system usually other energy storage systems a lot of more described here is more effective, but due to problem relevant under being in the temperature of liquid nitrogen magnitude of seethe with excitement to the superconductive material kept in this SMES system, causes it to operate usual very expensive.But, contrary with conventional system, can expect to adopt the system described here 4100 and 4150 of modification ELR material to provide the benefit relevant to conventional SMES system and efficiency, and there is no the high cost relevant to complicated cooling system and problem.Such as, as discussed above, material described here at high temperature (such as, liquid " freon " between boiling temperature and ambient temperature or higher) demonstrate ELR characteristic.Therefore, meticulous, complicated cooling system is optional feature not necessary in a lot of example.
This system 4100 and 4150 also comprises several other advantage.Such as, compared with other energy storage device quantity described here, the system 4100 and 4150 comprising magnetic storage apparatus has very short time delay during charging and discharging.Power apparatus is almost instantaneous obtains power.And, owing to meeting with low-down resistance by the electric current of system, therefore predict system 4100 and 4150 and have a small amount of or there is no power loss.Thus, compared with a lot of other energy storage devices (such as battery), the obvious operating efficiency of this system 4100 and 4150 is predicted higher.Finally, the primary clustering due to above-described magnetic energy storage ci is generally fixing during operation, therefore wishes that system 4100 and 4150 needs obviously less maintenance and the energy storage system more complicated compared with other has higher reliability.
There is capacitor and the ultracapacitor of modification ELR assembly
Modification ELR material described here is used to form capacitor.Figure 42-P is such as the schematic diagram of simple parallel plate capacitor 4200.Capacitor 4200 can be used in arbitrary energy storage device described here, or it can be used in other suitable equipment or assembly.In this example, capacitor 4200 comprises the input and output terminal 4210 and 4220 being connected to conductive plate or district 4230 and 4240 respectively.Conductive plate/district is by being filled with the distance of dielectric 4250 at least in part separately.Any other known dielectric such as insulator, electrolyte or other materials or compound that this dielectric can be air or adopt together with capacitor.
This plate/district 4230 and 4240 can adopt modification ELR material.Alternatively or additionally, input and output terminal 4210 and 4220 can adopt ELR material.Although show simple plane-parallel capacitor, the capacitor of arbitrary form can be adopted, such as formed on a semiconductor die those, based on the capacitor etc. of MEMS.
In some instances, modification ELR material described here can be used to form ultracapacitor or ultracapacitor.Ultracapacitor is configured to and battery and other energy storage devices described here differently storage power or energy.More specifically, ultracapacitor polarization electrolyte solution thus stored energy statically.Although ultracapacitor is electrochemical apparatus, in energy storage mechanism, do not comprise chemical reaction.Thus, different from a lot of type cell, this operation high reversible and allow circulation hundreds and thousands of ultracapacitors and do not affect performance.And most of ultracapacitor has the efficiency close to 100%.
Figure 43-P is taken to the electrochemical capacitance of the assembly that small part is formed by modification ELR material or the schematic diagram of ultimate capacitor 4300.Ultracapacitor 4300 comprises two non-reactive porous plates or collector (collector) 4310 and 4320.Electrolyte 4330 (such as active carbon, the metal dust of sintering) is arranged between two plates 4310 and 4320.In some instances, due to its chemical inertness, conductivity and can being easily processed into containing a large amount of internal holes, therefore utilize carbon as electrolyte 4330.The surface area produced by carbon electrolyte internal holes allows quite a large amount of stored energies in ultracapacitor 4300.This ultracapacitor 4300 is also included within the dielectric separator (separator) 4340 between two plates 4310 and 4320.In operation, voltage potential (voltagepotential) is applied across plate 4310 and 4320.In electrolyte 4330, attract anion at the upper electromotive force applied of positive electrode (i.e. plate 4310), the electromotive force simultaneously on negative electrode (i.e. plate 4320) attracts cation.Separator 4340 is oriented to prevent electric charge from moving between two plates 4310 and 4320.Ultracapacitor 4300 is configured to energy to be provided to load (not shown).
One or more assemblies of ultracapacitor 4300 are formed by nano wire, band or the paper tinsel formed by modification ELR film and modified film ELR film.Such as, one or more in plate 4310 and 4320 can be formed by modification ELR material described here.The multiple application utilizing modification ELR material to can be ultracapacitor 4300 and wherein to have employed ultracapacitor 4300 provides multiple advantage and benefit.Such as, the ultracapacitor 4300 iting is desirable to comprise modification ELR material provides the energy storage device of near ideal, namely provides the equipment close to 100% efficiency.
The structure of ultracapacitor 4300 is very concrete for wherein adopting the application of ultracapacitor 4300, and application-specific, desired properties characteristic and other factors drive design and the structure of ultracapacitor 4300.Such as, short output pulses or low-power is needed to support a lot of application of critical storage system.Benefit from ultracapacitor 4300.In other examples, ultracapacitor 4300P can be used in vehicle for acceleration or mountain-climbing during for power-assisted or the recovery for braking energy.Ultracapacitor 4300 can be such as that a part for vehicle typical brake system is used for accelerating to catch and to store a large amount of electric energy (being produced by braking) and discharged fast again.Wish that this feature significantly improves fuel efficiency under the city drive condition and other drive conditions of stop-go.Thus, different owing to existing between each application and between each equipment, therefore do not need to describe the particular value of ultracapacitor 4300 and multiple assembly at this.Those skilled in the art that the present inventor's prediction provides ELR material, ultracapacitor and each example of the application's principle realize multiple different ultracapacitor 4300 when not carrying out undue experimentation by all or part of one or more assemblies formed by modification ELR material.
Other energy storage devices
As mentioned above, by adopting modification ELR material in this energy storage device, wish that compared with regular power memory device this energy storage device provides the performance of improvement.As further illustrated above, modification ELR material has the performance depending on temperature.As a result, the energy storage device described here similarly temperature dependent of modification ELR material is adopted.Field in influence of temperature change flushed zone conductor, and it affects superconduction penetration depth, as described above.Can based on modification ELR material temperature as described herein to this change of respondent behavior moulding material, or can from empirically deriving.Note, by adopting modification ELR material, line resistance can be ignored, but can adjust this resistance based on temperature, as shown in the hygrogram that provides at this.Therefore, the design of adjustable energy storage device and structure with compensation temperature, or by change temperature adjusting energy storage device performance.
Although show single energy storage device, energy storage device can combine with forming energy storage network or array.About other kind energy storage devices discussed herein, the energy storage device of a lot of structure is all fine, and is that the design that designer is carried out up to stored energy array that small part formed by modification ELR material or multi-component system is considered.Modification ELR material described here can be used in complicated energy storage system, and it comprises the combination of two or more energy storage device and principle described here, even without clearly describing these combinations.In fact, the energy storage system of this complexity can adopt two or more dissmilarity or different types of energy storage device, is not simply similar or similar energy storage device.This system or array can comprise whole energy storage devices formed by modification ELR material of relative homogeneity (homogenous), or the heterogeneous mixture of dissimilar energy storage device, some equipment are formed by non-ELR material or distinct device and combination of different materials.Thus, two or more energy storage devices that complicated energy storage system or array can adopt the two or more homogeneity energy storage devices by being formed primarily of modification ELR material, the two or more heterogeneous energy storage device that formed primarily of modification ELR material and/or two or more homogeneities/heterogeneous energy storage device of being formed by conventional conductor and modification ELR material are formed.
Although there is described herein the concrete example of the energy storage device adopting part or get rid of the assembly formed by modification ELR material, but it will be appreciated by those skilled in the art that, in fact any energy storage structure all can be taken to the assembly that small part is formed by modification ELR material, such as those assemblies listed above, such as, with conduction current, Received signal strength, storage various forms energy or transmission (transmit) or amendment electromagnetic signal.Known energy storage device and system adopt conducting element and other elements widely, and some of them are listed hereinbefore.Although can use modification ELR material together with any conducting element in circuit, more should be understood that according to the definition of people to " conduction ", modification ELR material promotes that energy or signal are propagated along its length or area.As a result, exhaustive list all possible energy storage device and the system of the assembly formed by modification ELR material can not be adopted.Certainly, any conductor described here all can be formed by modification ELR material in whole or in part.
Although for some energy storage devices and system, some suitable geometries are described at this illustrate, interconnection, circuit and configuration, but much other geometries, interconnection, circuit and configuration are all fine, the present inventor's prediction all energy storage devices in fact as known in the art and related system all can adopt modification ELR material, and believe and provide ELR material, in energy storage device and the application, those skilled in the art of each example of principle are not when carrying out undue experimentation, can implement to have other energy storage devices of the one or more assemblies formed by modification ELR material in whole or in part.
In some embodiments, the energy storage device comprising modification ELR material can be described below:
A kind of equipment, comprise: be configured at least one energy storage device receiving and store from the energy of external power source, wherein energy storage device comprises: formed by modification pole low resistance (ELR) material or combined the assembly of this material at least partly, wherein modification ELR material is formed by modification ELR film, and this modification ELR film has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
A kind of equipment, comprise: at least one electrochemical cell being configured to chemical energy to convert to electric energy, wherein electrochemical cell comprises and to be formed by modification pole low resistance (ELR) material or at least partly in conjunction with the assembly of this material, wherein modification ELR material is formed by modification ELR film, and this modification ELR film has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
A kind of capacitor, comprising: the first conductive features; Second conductive features; And the dielectric be arranged between the first and second conductive features, wherein the first conductive features, the second conductive features or the two formed by modification pole low resistance (ELR) material at least in part, wherein this modification ELR material is by comprising the Part I of ELR material and comprising the material modified Part II being bonded to Part I ELR material and formed.
One method, comprising: from power supply received energy this power conversion become electric energy; With power storage is operationally being coupled in the energy storage device of power supply, wherein energy storage device or the transmission line between power supply and energy storage device are formed by modification pole low resistance (ELR) material or at least in part in conjunction with this material, wherein modification ELR material is formed by modification ELR film, and this film has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
A kind of equipment, comprise: be carried on enclosure and be operationally coupled to the flywheel of generator, and it is adjacent with flywheel and be configured at least one magnetic bearing engaging flywheel, wherein magnetic bearing is formed by modification pole low resistance (ELR) or combines this material at least in part, wherein modification ELR material is formed by modification ELR film, and this modification ELR film has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
A kind of equipment, comprise: at least one electrochemical cell being configured to the reactant from external source to convert to electric energy, wherein electrochemical cell comprises and to be formed by modification pole low resistance (ELR) material or at least in part in conjunction with the assembly of this material, wherein modification ELR material is formed by modification ELR film, and this ELR film has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
A kind of system, comprise: in electrical distribution net, be coupling in the stored energy assembly in the middle of one or more external power source, wherein stored energy assembly comprises and to be formed by modification pole low resistance (ELR) material or at least partly in conjunction with the element of this material, wherein modification ELR material is formed by modification ELR film, and this ELR film has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
A kind of equipment, comprising: magnetic energy storage device, comprises being formed by modification pole low resistance (ELR) material or at least in part in conjunction with the coil of this material; Be configured to cooling package coil being remained on preferred temperature, wherein modification ELR material is formed by modification ELR film, and this ELR film has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
A kind of ultracapacitor, comprising: the first conductive plate; And separated second conductive plate adjacent with the first conductive plate, wherein the first conductive plate, the second conductive plate or both formed by modification pole low resistance (ELR) material at least in part, wherein modification ELR material is by comprising the Part I of ELR material and comprising the material modified Part II being chemically bonded to Part I ELR material and formed; Be arranged on the electrolyte between the first and second conductive plates; And the dielectric separator between the first and second conductive plates.
The fault current limiter of the 16th chapter-formed by ELR material
This chapter describes and relates to Fig. 1-36 and Figure 37-Q to Figure 50-Q; Therefore, all reference numbers that this part comprises relate to the element found in the figure.
There is described herein all kinds fault current limiter adopting the inductor coil formed by the such as modification of pole low resistance (ELR) material, with holes and/or other new E LR materials.Although describe each example of the present invention with reference to the modification ELR material (such as modification ELR film etc.) of " modification ELR material " and/or various structure, but, it will be appreciated that, any improvement ELR material described here can be used, such as according to the modification ELR material (such as modification ELR material 1060 etc.) of each side of the present invention, ELR material with holes, and/or other new E LR materials.As described herein, in every respect, these ELR materials improved have at least one the operating characteristic improved, and in some instances, these characteristics operate under being included in the temperature being greater than 150K under ELR state.
Fault current limiter disclosed herein is suitable for the application of various different scales.Such as, scopes of these application from the small-scale application of limiter assembly or chip-scale fault current, to the intermediate sizable application of restriction system or device level fault current, to the fairly large application of the fault current of restriction electrical distribution or transmitting stage.Before the details relating to novel fault demand limiter is provided, some details of some application relating to fault current limiter will be provided.
About small-scale application, Figure 37-Q illustrates the chip of fault current limiter or the schematic diagram of other single chip architectures containing adopting ELR material.Chip 3700 is containing the circuit 3710 protected by fault current limiter 3705.The circuit 3710 protected is made up of one or more single circuit or circuit unit.In the execution mode of Figure 37-Q, with protective circuit 3710 in series localizing faults demand limiter 3705.But, multiple may in any one in structure, comprise and to be connected in parallel via electric field or magnetic field or to be coupled, it will be appreciated by those skilled in the art that fault current limiter can be connected to the circuit of protection.
By adopting fault current limiter on chip, chip obviously can benefit from the protection of improvement not by fault effects, but, other benefits a lot of can be enjoyed.By adopting ELR material in chip 370 inside, except other benefits, chip can enjoy larger current densities.Such as, by adopting ELR material, chip has comparatively low-heat loss, and due to each conductor can transmit more multiple current, therefore, it is possible to adopt more thin conductor.Conductor and interconnection can be manufactured by ELR material.And, due to greatly insertion loss can be reduced, therefore can transmission signal and do not need amplify.And, manufacture chip by smallest size ic manufacturing technology, such as≤45nm minimum feature size technology.By the characteristic size reduced, except other benefits, circuit designers has less restriction based on conductor layout or length, and this can promote physical Design.
About pilot-scale application, Figure 38-Q show system 3800 comprise can be loaded into shell and be connected to the fault current limiter of equipment such as household appliances.Such as, fault current limiter 3825 can be arranged in plate (such as PCB) and goes up and be loaded into single shell 3820, thus formation box or electrical equipment (appliance) are to protect connected any electronic equipment.Such as, shell 3820 can containing recessed connection at one end and the power line having projection in end opposite and be connected.In this example, electronic equipment (such as TV 3805) can be inserted into the recessed end 3810 of fault current limiter shell 3820 and projecting end 3830 is inserted into electrical socket 3840 by consumer.Electronic equipment 3802 is protected not affect by fault current by fault current limiter 3825 afterwards.
Although show TV 3805, it will be understood by those skilled in the art that fault current limiter shell 3820 can be connected to various housed device, such as PC, stereo system equipment, quarter-bell, kitchen tools, electric tool etc.And fault current limiter shell 3820 can use together with any other equipment, such as may expensive and the medical science of sensitivity or scientific equipment.And, it will be understood by those skilled in the art that fault current limiter shell 3820 and connection thereof can change and be not limited to the connection to standard power outlet.
Important miscellaneous function (significantservice) is found in the proterctive equipment of fault current limiter in large-scale application such as power network.Owing to being positioned at the large and feature of costliness of equipment on the electrical network that is subject to single fault effects on network and a large amount of individual unit and commercial location (such as hospital, airport and commercial manufacturing facilities man), the fault-current protection on power network is caused to be particular importance.
Figure 39-Q is the diagram of the power network comprising the fault current limiter adopting modification ELR material.Power plant (Powerplant) 3910 is produced as the electric current of network power supply.This power plant can be any type that can produce the electric current be used on network, such as coal, underground heat, nuclear energy, methane, waterpower, wind or solar energy.After generating, the voltage rise (or " boosting ") of spontaneous power plant 3910 is to the high voltage such as 230kV being applicable to long range propagation.Voltage raises and occurs in high-voltage switch station 3915, wherein can comprise the step-up transformer 3920 via a series of coil boosted voltages be wound around around core body.
Hv transmission line 3925 transmits the voltage of rising to transformer station 3930.Transformer station 3930 comprises step-down transformer 3935, and it reduces voltage to being applicable to the grade such as 13.3kV being dispensed to user.On point distribution 3937, distribution voltage is carried to each user, such as house 3940, school 3945 or hospital 3950 afterwards.Power network 3900 also comprises the fault current limiter 3955 be coupling between step-up transformer 3915 and step-down transformer 3930.In this structure; fault current limiter 3955 can protect step-up transformer 3920 and power plant 3910 not by the fault effects that may occur in downstream, and this fault is included in hv transmission line 3925 (between fault current limiter 3955 and transformer station 3930), in transformer station 3930 (comprising other assemblies in step-down transformer 3935 and transformer station 3930), the fault of dividing distribution 3937 and user's (comprising house 3940, school 3945 and hospital 3950).Similarly; fault current limiter 3955 can be protected hv transmission line 3925 (between fault current limiter 3955 and transformer station 3930), not be subject at the fault effects of upstream generation, to be included in the fault in step-up transformer 3920 and power plant 3910 transformer station 3930 (comprising other assemblies in step-down transformer 3935 and transformer station 3930), point distribution 3937 and user's (comprising house 3940, school 3945 and hospital 3950).
Although Figure 39-Q shows the fault current limiter 3955 between transformer 3920 and step-down transformer 3935, but it will be understood by those skilled in the art that, fault current limiter 3955 (and other fault current limiters multiple) is positioned in the one or more diverse locations on power network 3900, such as comprise, between any one between power plant 3910 and step-up transformer 3920 or in step-down transformer 3935 and user 3940,3945 or 3950.In addition, it will be understood by those skilled in the art that one or more fault current limiter can be positioned in power plant 3910, in high-voltage switch station 3915 or in transformer station 3930 (as described above with shown in Figure 40 A-Q and 40B-Q).
Figure 40 A-Q and 40B-Q shows the schematic diagram of 3,935 two kinds, the transformer station possibility execution mode combining the fault current limiter that can adopt modification ELR material.In the first execution mode 4000 described in Figure 40 A-Q, fault current limiter 4020 to be positioned in transformer station 3930 and to be coupled to step-down transformer 3935.Step-down transformer 3935 is coupled to power plant 3910 via high-voltage line 3925 and the step-up transformer 3920 being positioned at high voltage switchyard 3915.Fault current limiter 4020 is coupled to house 3940 and school 3945 further by transformer station's feed circuit breaker (feederbreaker) 4030 and 4044, and is coupled to hospital 3950 further by transformer station's feed circuit breaker 4030 and 4043.Fault current limiter 4020 is coupled to other users by transformer station's feed circuit breaker 4041 and 4042.In the execution mode of Figure 40 A-Q, fault current limiter 4020 can protect the multiple assemblies relevant to transformer station 3930.Multiple protected assembly comprises house 3940, school 3945, hospital 3950 and is connected to other users of transformer station's feed circuit breaker 4041 and 4042; by before fault current limiter 4020, its all make its separately load by transformer station's feed circuit breaker 4030.
In Figure 40-Q, in the second execution mode 4050 of description, comprise the step-down transformer 3935 being coupled to power plant 3910 by hv transmission line 3925 and the step-up transformer 3920 being arranged in high voltage switchyard 3915.Fault current limiter 4070 is coupled to hospital 1950 by transformer station's feed circuit breaker 4080 and 4093.Step-down transformer 3935 is coupled to via transformer station's feed circuit breaker 4094 and 4080 in house 3940 and school 3945, but is not coupled to fault current limiter 4070.Step-down transformer 3935 is coupled to other users by transformer station's feed circuit breaker 4091 and 4092.In the execution mode of Figure 40 B-Q, fault current limiter 4070 can protect hospital 3950 not affect by fault current, but can not defend the dwelling 3940 and school 3945.It will be understood by those skilled in the art that fault current limiter can be positioned in each position to protect desired multiple or a few specific components.Fault current limiter being positioned at appropriate location makes electric power application company (powerutilityfactory) respond the dynamic need of electric power transfer and distribution system to protect the ability of specific user or assembly.
Fault current limiter described here can be the several dissimilar with fault current limiting of employing distinct methods.There is described herein the fault current limiter of two kinds of main Types that can adopt modification ELR material: Resistance Fault demand limiter and inductive faults demand limiter.The third reactance type (reactortype) fault current limiter is also described, saturation reactance (saturablereactor) the type fault current limiter that such as can be formed by modification ELR material at this.Although there is described herein three types fault current limiter (i.e. resistance, inductance and saturation reactance type), but it will be appreciated by those skilled in the art that, except this three types, various other types fault current limiter can be formed by modification ELR material.
Figure 41-Q is the schematic diagram of Resistance Fault demand limiter, and it operates in the level of the horizontal current downflow of fault to suppressing electric current by the resistance increased in current path.Particularly, according to the superconduction of the ELR material of preset time and ELR state, Resistance Fault demand limiter 4100 can be implemented, as shown in Figure 41-Q by the modification ELR material with variable resistor and impedance 4110.Alternatively or additionally, improving ELR material can doped with suitable element or compound to regulate the resistivity of modification ELR material and thus to provide variable or the resistance of selection.
As shown, Resistance Fault demand limiter 4100 is made up of the modification ELR material of connecting with by protected circuit 4115.When there is not fault condition (under normal operation), the electric current flowing through modification ELR material remains on below the critical current density of modification ELR material.As a result, modification ELR material is retained in the superconductor or ELR state on a small quantity or do not have with resistance 4110.This can make protected circuit 4115 efficient operation, and does not increase resistance or the impedance of the efficiency that can reduce protected circuit or system.When there is fault condition, the electric current flowed in modification ELR material is increased to the level exceeding its critical current density.As a result, modification ELR material is extinguished (quench) [losing its superconductivity or ELR state] and is converted to its non-superconducting state.Transformation to its non-superconducting state causes the sharply rising of protected circuit 4115 resistance or impedance 4110.As a result, large resistance or impedance are for limiting the flowing of fault current in protected circuit 4115.Resistance Fault demand limiter 4100 also can be included in endergonic shunt 4120 between age at failure.
Figure 42-Q shows and can comprise the Resistance Fault demand limiter 4200 used in the various application be positioned on power network.Resistance Fault demand limiter 4200 comprises and the shell of circuit 4205 and load 4210 series coupled or housing 4215.4245 can be connected via outside by any one circuit 4205 formed in conventional material or modification ELR material and enter fault current limitation housing 4215.Outside connection between 4245 and the partially modified ELR material 4230 in fault current limiter housing 4215 is coupling in by any one input connector formed 4220 in conventional material or modification ELR material.The end opposite of ELR material 4230 is coupled to and can specifies any one output conductor 4225 formed by conventional material or modification ELR material.Output conductor 4225 is coupled to outside connection 4250, and it is then connected to load 4210.
Shunt impedance 4240 can be connected in series between circuit 4205 and load 4210.In addition, cooling unit 4235 can be coupled to fault current limiter housing 4215 to cool modification ELR material 4215 to its operation or ambient temperature.Although modification ELR material 4215 can operate under ELR state at higher than the temperature (such as room temperature) of normal HTS material, as described herein, but due to the too much heat that around high-voltage transmission equipment and the sunlight that is exposed to amount of heat or warm weather produce, cooling unit 4235 is caused to be necessary, to cool modification ELR material to its operating temperature.And by controlling the temperature of modification ELR material, the performance of adjustable fault current limiter or response, as more specifically described at this.
The operation of Resistance Fault demand limiter 4200 is consistent with the principle of the Resistance Fault demand limiter described above.Particularly, Resistance Fault demand limiter 4200 is positioned to connect with circuit 4205 and load 4210.When there is not fault condition (under normal running), the electric current flowing through modification ELR material 4230 keeps below the critical current density of modification ELR material.As a result, modification ELR material remains on superconduction or ELR state, has on a small quantity or does not have resistance or impedance.This can make the equipment high efficiency on power network operate, and does not increase the resistance or impedance that can reduce network performance.When there is fault condition, the electric current flowing through modification ELR material 4230 is increased to the level of the critical current density exceeding modification ELR material.As a result, modification ELR material loses its superconductivity or ELR state and is converted to non-ELR state.Transformation to non-ELR state causes the protected portion sub-resistance of network or impedance sharply to rise.As a result, large resistance or impedance limit fault current flowing (with most of fault energy is transferred to shunt 4240 be used for absorb).
Figure 43-Q is the schematic diagram of inductive faults demand limiter, and impedance is inserted into fault current limiting in protected circuit by adopting transformer by it.Inductive faults demand limiter can be implemented as the transformer as shown in Figure 43-Q.As shown, inductive faults demand limiter 4300 is made up of primary winding coil 4310 and secondary winding coil 4315.Protected circuit 4320 is connected in series with primary coil 4410.Secondary coil 4315 is by modification ELR part closed-loop path (although some or all primary coils and be connected circuit also can be made up of modification ELR material) in series.Although with reference to single coil, for inductive primary, inductive secondary or both, replacement system can adopt more than one coil.
When there is not fault condition (under normal operation), primary coil produces magnetic field, and critical magnetic field density [Hc] the secondary short circuited coil below remaining on modification ELR series connection repels this magnetic field.As a result, the modification ELR material in secondary circuit 4325 keeps its superconduction or ELR state, has and has resistance on a small quantity or not, and reflection on a small quantity or not reflected resistance and impedance to primary inductance.This can make protected circuit 4320 (itself and elementary being connected in series) efficient operation and not need increase can reduce the performance of protected circuit or system and the impedance of efficiency and ohmic loss.But when there is fault state, the magnetic field of increase is infiltrated secondary and is coupled to magnetic core, and it effectively introduces and reflexes to elementary inductance in secondary circuit.Transformation to non-ELR state causes the sharply increase of resistance 4325 in secondary circuit, and it reflexes to elementary immediately together with the resistive loss in magnetic core.As a result, elementary impedance is reflexed to resistance for limiting the flowing (it is connected with primary series) of fault current in protected circuit 4320.
Figure 44-Q shows the inductive faults circuit limiter 4400 finding in many applications to use.The armature winding be made up of conventional serial or modification ELR material or coil 4405 with protected circuit 4420 is connected in series.In primary coil 4405 inside is the secondary coil 4410 formed by the short-circuited coil of closed-loop path or modification ELR material, it is used as shielding (shield) or covers (screen) (alternatively, secondary coil 4410 adjustable inductance is coupled to primary coil 4405, but whether must be inner at primary coil).In the example of Figure 44-Q, be elementaryly wrapped on the tubing that formed by HTS or modification ELR material, it is used as the secondary winding of individual pen.Secondary coil can be formed in around the magnetic core 4415 be made up of several types of materials, comprises ferromagnetic material such as iron, as described herein.
The operation of inductive faults circuit limiter 440 is identical with the principle of inductive faults circuit limiter described here.When there is not fault condition (under normal operation), primary coil 4405 produces the magnetic field lower than the cylindrical critical magnetic field density He of modification ELR material 4410.Therefore, by this magnetic field of secondary repulsion being used as shielding or cover.As a result, modification ELR material its superconduction of Bao Te in secondary circuit 4410 or ELR state, a small amount of or do not have resistance and inductive impedance to reflex to primary coil 4405.This can make protected circuit 4420 (itself and primary coil are connected in series) efficient operation and not increase the impedance that can reduce performance or the resistance that can lower efficiency.But, when there is fault state, produce at the electric current of elementary middle flowing the magnetic field intensity exceeding the critical magnetic field strength He of modification ELR material.As a result, the modification ELR material transition in secondary circuit 4410 is to non-ELR state.Transformation to non-ELR state causes the resistance of secondary circuit 4410 sharply to raise, and this reflexes to elementary 4405 by its inductive impedance immediately.As a result, the large impedance of primary coil 4405 is reflected back toward for being limited in the fault currents flow in protected circuit 4420 (itself and primary coil 4405 are connected in series).In other words, during fault-free situation, by the magnetic field of elementary generation be not coupled to be used as shielding or cover secondary.Thus, elementaryly Low ESR is in.Between age at failure, the shielding exceeding He is infiltrated in magnetic field, and secondary circuit is ohmic and the inductive impedance of magnetic core and loss thereof are introduced in circuit.The advantage of this type fault circuit limiter is to regulate separately resistance in fault conditions and inductance with applicable circuit and load characteristic.
Figure 45-Q is the schematic diagram of saturation reactance type fault current limiter, and it carrys out fault current limiting by the AC coil inside DC magnetic flux saturable core in carry load.Reactance fault current limiter 4500 comprise in AC voltage source 4510, the AC coil 4515 and load 4520 be connected in series with two AC coils 4515 and load 4520 one or two be made up of modification ELR material in whole or in part.Reactance fault current limiter 4500 also comprises the DC voltage source 4530 be connected in series with the DC coil 4535 formed by modification ELR material.AC coil may comprise the magnetic core that ferromagnetic such as steel formed and is coupled to DC coil by material via by several, as the described herein.DC coil is part closed-loop path and is made up of (although some or all DC coils and institute's connecting circuit also can be made up of modification ELR material) modification ELR material.Although with reference to single coil, replacement system can adopt more than one coil for DC coil, AC coil or both.
When there is not fault state (under normal operation), DC coil 4535 causes magnetic core saturated, here, and core inductance coupling DC coil 4535 and AC coil 4515.Saturated coil causes the Low ESR in AC coil 4515, and this can make electric current natural flow.But when there is fault state, the magnetic flux in AC coil 4515 rises and therefore magnetic core becomes unsaturated.The desaturation of magnetic core causes AC coil impedance to increase immediately, and this is fault current limiting immediately.
Figure 46-Q shows the saturation reactance type fault current limiter 4600 finding to use in multinomial application.Saturation reactance type fault current limiter 4600 comprises two AC coils 4610 and 4615, and one of them is connected to AC load (not shown).Saturation reactance type fault current limiter 4610 comprises the DC coil 4620 be connected in series with DC voltage source (not shown) further.AC coil 4610 and 4615 may comprise the magnetic core 4625 and 4630 that ferromagnetic material such as steel formed and is coupled to DC coil 4620, as said by material via by several.A part (although some or all DC coils and be connected circuit also can be made up of modification ELR material) for the closed-loop path that DC coil 4620 is made pottery by modification ELR material.Although with reference to single DC coil and two AC coils, replacement system can adopt one or more coil for DC coil, AC coil or both.
When there is not fault state (under normal operation), DC coil 4620 causes the magnetic core 4625 and 4630 be coupled with both DC coil 4620 and AC coil 4610 and 4615 saturated.Saturated magnetic core 4625 and 4630 causes the Low ESR in AC coil 4610 and 4615, and this can make electric current proper flow in protected AC circuit.But when there is fault state, magnetic flux rises and causes magnetic core 4625 and 4630 to become unsaturated in AC coil 4610 and 4615.The desaturation of magnetic core 4625 and 4630 causes the impedance of AC coil 4610 and 4630 to increase immediately, and this limits fault current in protected AC circuit immediately.
Inductor by being formed by modification ELR or other materials at least in part implements fault current limiter described here with other assemblies, as mentioned below.
There is the inductor of ELR assembly
Describe the inductor such as hollow or core inductor that comprise the assembly formed by modification pole low resistance (ELR) film.In some instances, the inductor nano wire coil that comprises magnetic core and formed by modification ELR film.In some instances, inductor comprises magnetic core and the band that formed by modification ELR film or foil coil.In some instances, modified film ELR film is used to form inductor.At the temperature high higher than usually relevant to current high-temperature superconductor (HTS) temperature, this modification ELR film provides pole low resistance for electric current, thus except other benefits, enhances the operating characteristic of rotating machinery under these higher temperatures.
In some instances, based on the application of material type, modification ELR film, the size of components adopting modification ELR film, the device of employing modification ELR film or the operational requirements etc. of machinery, modification ELR film is manufactured.Like this, during the Design and manufacture of inductor, can based on various consideration and action required and/or manufacturing characteristics, the material of the material selecting the basic unit being used as modification ELR film and/or the modified layer being used as modification ELR film.
Various equipment, equipment and/or system all can adopt modification ELR inductor.In some instances, the circuit of tuning or resonance and application thereof adopt modification ELR inductor.In some instances, transformer and application thereof adopt modification ELR inductor.In some instances, energy storage device and application thereof adopt modification ELR inductor.In some instances, current limiting device and application thereof adopt ELR inductor.
Figure 47-Q is the figure that the hollow inductor 4700 with modification ELR film is shown.Inductor 4700 comprises coil 4710 and hollow 4720 (aircore).When coil 4710 loaded current (such as on the direction on the right side of the page), in magnetic core 4720, produce magnetic field 4730.Coil is formed by modification ELR film at least in part, such as has ELR material base layer and the film being formed in the modified layer in basic unit.Various applicable modification ELR film is described in detail at this.
Voltage can be applied to modification ELR coil 4710 by battery or other power supply (not shown), causes electric current in coil 4710 internal flow.At the temperature used in higher than conventional H TS material, such as room temperature or ambient temperature (~ 21 DEG C), the coil 4710 formed by modification ELR film provides on a small quantity or does not provide resistance to the electric current in coil.Electric current in coil produces magnetic field in magnetic core 4720, and it can be used for stored energy, transmits energy, restriction energy etc.
Because inductor 4700 comprises the coil 4710 formed by pole low electrical resistant material (i.e. modification ELR film), therefore inductor can as ideal inductor, here, owing to usually there is the winding or series resistance that find in the inductor of conventional conductive line circle (such as copper coil), coil 4710 is caused to demonstrate a small amount of or lossless, and no matter by the electric current of coil 4710 how.That is, inductor 4700 demonstrates very high quality (Q) factor (such as close to infinitely great), and it is the ratio of induction reactance and resistance under given frequency, or Q=(induction reactance)/resistance.
In some instances, at the temperature between the transition temperature (~ 80to135K) and room temperature (~ 294K) of conventional H TS material, modification ELR coil provides pole low resistance for electric current.In these examples, inductor can comprise cooling system (not shown) such as cryogenic coolant or cryostat, for the modification ELR film type utilized for coil 4710, and cooling coil 4710 to critical temperature.Such as, cooling system can be can cooling coil 4710 to the temperature similar to liquid fluorine Leon temperature, to the temperature similar to ice or melting ice or other temperature described herein.That is, based on the Material selec-tion cooling system adopted in the type of modification ELR film and structure or coil 4710.
In some instances, hollow 4720 is self-supportings.In other examples, hollow 4720 forms such as plastics or pottery by non-magnetic material (not shown).Material or the shape of magnetic core can be selected based on various factors.Such as, select that there is the density that the infiltrative core material higher than air permeability increases the magnetic field 4730 of initiation usually, and thus, increase the inductance of inductor 4700.In another example, by reducing the selection of the demand management core material of core loss in frequency applications.It will be understood by those skilled in the art that magnetic core can be formed by multiple different materials and can form it into multiple difformity, realize some desirable characteristics and/or operating characteristic.
As known in the art, the structure of coil 4710 can affect some operating characteristic, such as inductance.Such as, wire circle, coil cross-sectional area, loop length etc. can affect the inductance of inductor.Thus draw, although not shown in one structure, can configure inductor 4700 in many ways can operating characteristic (such as inductance value) to realize some, thus reduces some undesired effect (such as, skin effect, proximity effect, parasitic capacitance) etc.
In some instances, coil 4710 can comprise a lot of coils parallel to each other.In some instances, coil can comprise the several coils with angle wound different from each other.Thus, coil 4710 can be formed as multiple different structure, such as honeycomb or basket weave figure, wave winding etc., here, continuous coil is intersected with each other with different angles, cobweb figure, pi winding (piwinding) etc., here, coil is formed by the smooth helical coil be spaced apart from each other, and as twisted wire, multi-strand cable is insulated from each other to reduce ac resistance etc. here.
Except hollow inductor, core inductor such as inductor 4800 also can use modification ELR film, as will now be discussed.Figure 48-Q is the schematic diagram that the core inductor 4800 adopting modification ELR film is shown.Inductor 4800 comprises the coil 4810 and magnetic core 4820 that are such as formed by ferromagnetic or ferromagnetic material.Similar to the inductor 4700 of Figure 47-Q, when by coil 4810 loaded current, in magnetic core 4820, produce magnetic field 4830.Coil is formed by modification ELR film at least partly, such as has ELR material base layer and the film being formed in the modified layer in basic unit.Various suitable modification ELR film is specifically described at this.By being formed by modification ELR film, under the temperature such as room temperature or ambient temperature (~ 21 DEG C) that use in higher than conventional H TS material, coil 4810 provides resistance on a small quantity or not for electric current provides.Electric current in coil produces magnetic field 4830 in magnetic core 4820, and it can be used for stored energy, transmits energy, limits energy etc.
Because the magnetic permeability in produced magnetic field 4830 is higher than the permeability of air, and thus because the magnetization of magnetic material causes more supporting to form magnetic field 4830, the magnetic core 4820 therefore formed by ferromagnetic or ferromagnetic material increases the inductance of inductor 4800.Such as, magnetic core can 1000 or larger factor increase inductance.
Inductor 4800 can utilize various different materials in magnetic core 4820.In some instances, magnetic core 4820 is formed by ferromagnetic material such as iron.In some instances, magnetic core 4820 is formed by ferromagnetic material such as ferrite.In some instances, magnetic core 4820 is formed by the magnetic material of lamination, such as silicon steel lamination.It will be understood by those skilled in the art that the needs according to inductor 4800 and demand, can other materials be used.
In addition, magnetic core 4820 (and, thus, inductor 4800) can be configured to various dissimilar.In some instances, magnetic core 4820 can be shaft-like or cylindric.In some cases, magnetic core 4820 can be annular.Magnetic core 4820 is moveable in some cases, and inductor 4800 can be made to realize various inductance.It will be understood by those skilled in the art that and can use other shapes and structure according to the needs of inductor 4800 and demand.Such as, can construct magnetic core 4820 to limit various defect, wherein, such as at the core loss caused due to eddy current and/or hysteresis, and/or inductance is non-linear.
Thus, in some instances, except other benefits, by reducing or eliminating the resistance to electric current in coil, modification ELR material and/or the assembly such as modification ELR film formation coil 4710 of inductor 4700 or the coil 4810 of inductor 4800 is used to increase the Q factor of inductor.
Manufacture and/or form the inductor be made up of ELR film
As described herein, in some instances, owing to being formed by modification ELR material, therefore the coil of inductor demonstrates pole low resistance to carried electric current.Figure 49 A-Q is the figure that the inductor 4900 adopting modification ELR nano wire is shown.Inductor 4900 comprises the coil 4902 being formed the modification ELR nano wire be made up of ELR assembly described here such as modification ELR film.
In formation ELR wire, multiple ELR band or paper tinsel can be sandwiched in together to form micron-sized wire.Such as, coil can comprise supporting construction and the one or more ELR that supported by supporting construction are with or paper tinsel.
Except ELR lead-in wire, electric conductor can be formed by ELR nano wire.In traditional, nano wire is that width and diameter are in the following magnitude of tens nanometers and usually without the nanostructure of strain length.In some cases, ELR material can be formed as the nano wire that width and/or the degree of depth are 50 nanometers.In some cases, ELR material is formed as the nano wire that width and/or the degree of depth are 40 nanometers.In some cases, ELR material is formed as the nano wire that width and/or the degree of depth are 30 nanometers.In some cases, ELR material is formed as the nano wire that width and/or the degree of depth are 20 nanometers.In some cases, ELR material is formed as the nano wire that width and/or the degree of depth are 10 nanometers.In some cases, ELR material is formed as the nano wire that width and/or the degree of depth are 5 nanometers.In some cases, ELR material is formed as the nano wire that width and/or the degree of depth are below 5 nanometers.
Except nano wire, also improve ELR band or paper tinsel by inductor described here and equipment utilization.Figure 49 B-Q illustrates the inductor 4910 adopting modification ELR band or paper tinsel.Inductor 4910 comprises magnetic core 4912 such as iron core, and is with the magnetic core 4914 formed by modification ELR.
Have for the production of the multiple technologies with the band and/or paper tinsel that manufacture ELR material.In some instances, this technology be included in be coated with buffering metal oxide flexible metal band on deposit YBCO or another ELR material, formed coating conductor.During processing, such as by using rolling to assist biaxial texture substrate (rolling-assisted, biaxially-texturedsubstrates) (RABiTS) technique, structure can be incorporated in metal tape self, or by using ion beam assisted depositing (IBAD) technique, instead on the alloy substrate of non-configuration, deposit textured ceramic resilient coating by means of the particle beams.Adding oxide layer prevents metal to be diffused into ELR material from band.Other technologies can utilize chemical vapour deposition (CVD) CVD technique, physical vapour deposition (PVD) (PVD) technique, atom successively molecular beam epitaxy (ALL-MBE) and other hold liquid deposition technique to manufacture ELR material.
And film inductor can utilize ELR assembly described here.Figure 49 C-Q is the schematic diagram that the inductor 4920 adopting modification ELR film assembly is shown.Inductor 4920 comprises and is formed in modification ELR coil 4922 on printed circuit board (PCB) 4924 and optional magnetic core 4926.According to the employing equipment of this inductor or the demand of system, this coil 4922 that can be the modification ELR film be etched in plate 4924 is formed as various structures and/or figure.And, optional magnetic core 4926 can be etched in plate 4924, as shown, or have the plane core (not shown) being arranged on side above and/or under coil 4922.
Thus, modification ELR film can be formed as band, paper tinsel, bar, bar, nano wire, film and other shapes, geometry or the structure that move or carry electric current can be put, to produce magnetic field from a point to another.
In some instances, by utilizing the application type of this film to determine to be used in the material type in modification ELR film.Such as, some applications exploitings have the modification ELR film of BSCCOELR layer, and other applications exploitings YBCO layer.Namely, in the middle of other factors, based on machine or the component type utilizing this modification ELR film, modification ELR film described here can be formed as some structure (such as band or nano wire), and be formed by some material (such as YBCO or BSCCO).
Various technique can be adopted in manufacture inductor such as inductor 4900,4910 and/or 4920.In some instances, formed, safeguard, receive and/or locating core.This core can adopt various shape or structure.Configuration example comprises cylindrical bar, single " I " shape, " C " or " U " shape, " E " shape, a pair " E " shape, some shape, toroidal, annular or globule shape, planar shaped etc.Core can be formed by various non magnetic or magnetic material.Examples of materials comprises iron or soft iron, silicon steel, various laminated material, silicon alloy, carbon back iron, iron powder, ferrite ceramics, the nature of glass or amorphous metal, pottery, plastics, air etc.
In addition, the coil that coil is such as formed by modification ELR nano wire, band or film is configured to required form or figure and is coupled to core that is formed or that safeguard.In some instances, there is no core, and modification ELR nano wire is configured to required form or figure.In some instances, modification ELR nanocoil is etched directly into printed circuit board (PCB), and about etched coil location planar magnetic core.Other manufacturing process can be utilized when it will be understood by those skilled in the art that when manufacture and/or form inductor described here.
Although generally described single fault current limiter for each application, two or more fault current limiter can be provided in given chip, house, network transformer station or other environment.In fact; given environment can adopt one or more chip or execution mode with one or more disclosed fault current limiter; it is attached in one or more house conversely, and it can inject power distribution network further combined with in fairly large environment.Certainly, available ELR material and conventional material manufacture fault current limiter described here.
There is other fault current limiters application of ELR assembly
Above-described fault current limiter can be suitable for use in various application, scope comprises and is used on chip, is used in power network.By adopting modification ELR material in this fault current limiter, under condition of similarity, fault current limiter provides magnitude to be less than the resistance of best normal conductor (bestcommonconductor).
And, this fault current limiter can be manufactured with less and compacter form, all as described above on chip, here, this chip can comprise other assemblies such as logic, analog circuit etc.By adopting fault current limiter on chip, this chip obviously benefits from protection and the performance of raising.By adopting ELR material in chip, except other benefits, this chip also can enjoy the circuit of larger density.Such as, by adopting ELR material, this chip is enjoyed less heat and is produced, and therefore can adopt more thin conductor owing to can transmit more multiple current in same line width.Conductor and interconnection can be manufactured by ELR material.And, owing to significantly reducing insertion loss, therefore can without the need to the signal transmission amplified.
As mentioned above, modification ELR material has the performance depending on temperature.As a result, the fault current limiter described here of modification ELR material is adopted similarly to depend on temperature.Influence of temperature change field penetrates in strip conductor, and this can affect superconduction depth of penetration.For modification ELR material described here, can based on this change of temperature to respondent behavior moulding material, or can from empirically obtaining.Note, by adopting modification ELR material, line resistance is insignificant, but can regulate this resistance based on temperature, as shown in the thermometer that provides at this.Therefore, adjustable fault current limiter design with compensation temperature, or regulates fault current limiter operation by changing temperature.
With reference to figure 50-Q, show system 5000 example (although all chunks are all interconnection shown in Figure 50-Q, less connection is also fine) of the circuit 5010 and logic 5020 comprising and be coupled to temperature-control circuit 5015.Circuit 5010 adopts one or more fault current limiter described here, and it is formed by ELR material at least in part.Logic control temperature-control circuit, it is controlled cooling model device/freezer unit such as low temperature, liquid or gas cooler conversely, its cooling circuit 5010.Thus, in order to increase susceptibility or the response of system 5000, logic 5020 sends a signal to temperature-control circuit 5015 to reduce the temperature of circuit 5010.As a result, adopt the circuit 5010 of ELR material to cause ELR material to increase conductivity, thus increase circuit sensitivity or response.
Although show single fault current limiter, multiple fault current limiter can combine to form fault current limiter group or array, or the fault current limiter system of other complexity.About other kinds of fault current limiter described here, a lot of structures of fault current limiter are all fine, and are that the design that designer is carried out up to fault current limiter that small part formed by modification ELR material or multiple fault current limiter system is considered.Modification ELR material described here is used in multiple fault current limiter system, and this system comprises the combination of two or more fault current limiter and principle described here, even without clearly describing these combinations.In fact, this multiple fault current limiter system can adopt two or more dissimilar or different types of fault current limiter (such as resistance and inductance), is not simply similar or with kind fault current limiter (such as two inductance).This fault current limiter system can comprise all by modification ELR material formed relatively with kind fault current limiter, or the variety classes mixing of dissimilar fault current limiter, some fault current limiters are formed by non-ELR material, or different faults demand limiter and combination of different materials.Thus, complex fault current limiter system can adopt two or more fault resstance limiters that two or more variety classes fault current limiters by being formed primarily of modification ELR material are formed.And/or the two or more same kind/variety classes fault current limiter to be formed by conventional conductor and modification ELR material.
Although there is described herein the concrete example of the fault current limiter adopting the some or all of assembly formed by modification ELR material, but it will be appreciated by those skilled in the art that, in fact any fault current limiter structure can be taken to the assembly that small part is formed by modification ELR material, such as those assemblies listed above, such as with conduction current, Received signal strength, or launch or revise electromagnetic signal (although ELR material can use together with any conducting element in circuit, but can understand further, according to the definition of people to " conduction ", modification ELR material promotes that energy or signal are propagated along its length or area).As a result, exhaustive list all possible fault current limiter and the fault current limiter system of the assembly formed by modification ELR material can not be adopted.
Although to illustrate for some fault current limiters at this and describe some suitable geometries, much other geometries are also fine.Except material thickness is different, use except different layers and other three-dimensional structures (type of such as coil and core), these other comprise about the different graphic of length and/or width, structure or layout in conjunction with shape.The present inventor contemplates in fact all fault current limiters and related system as known in the art can adopt modification ELR material, and believe that the those skilled in the art of each example providing ELR material, fault current limiter and the application's principle are not when carrying out undue experimentation, can implement other fault current limiters, it has the one or more assemblies formed by modification ELR material in whole or in part.
In some embodiments, the fault current limiter (FCL) comprising modification ELR material is described below:
A kind of inductive fault current limiter, comprising: the inductive primary be connected with by protected circuit connected in series; With the inductive secondary be positioned in series with closed-loop path; Wherein inductive primary and inductive secondary are inductively coupled, and making between inductive primary and inductive secondary can mutual inductance; Wherein inductive secondary comprises core and is configured to modification pole low resistance (ELR) nano wire of the coiled type surrounding core at least partly; Wherein modification ELR nano wire is formed by modification ELR film, and this ELR film has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
A kind of equipment, comprising: be wrapped in the first three dimensional coils around the first core at least partly; Be wrapped in the second three dimensional coils around the second core at least partly; Wherein the first three dimensional coils and the second three dimensional coils each comprise the Part I with pole low resistance (ELR) material and the Part II being bonded to Part I reducing ELR material resistance; Wherein the first three dimensional coils and the second three dimensional coils are inductively through the first three dimensional coils and the second three dimensional coils.
Be used in the inductive fault current limiter in electrical power distribution of net, comprise: the inductive primary be connected with protected circuit connected in series, protected circuit produces downstream, source in electrical power; With the inductive secondary be positioned in series with closed-loop path; Wherein inductive primary and inductive secondary are inductively coupled, and make mutual inductance between inductive primary and inductive secondary; Wherein inductive primary and inductive secondary size and vibrational power flow are allow the curtage higher than the curtage relevant to the electrical power being provided to standard-family user; Wherein inductive secondary comprises core and is configured to modification pole low resistance (ELR) nano wire of the coil shape surrounding core at least partly; Wherein modification ELR nano wire is formed by modification ELR film, and this ELR film has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
A kind of resistive fault current limiter, comprising: the resistance element being coupled to protected circuit, wherein resistance element is coupled in series between circuit and electric power source; The modification ELR nanometer line or belt that wherein resistance element is comprised by being formed by modification ELR film is formed at least partially, and this ELR film has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
A kind of reactance fault current limiter, comprising: the inductive primary be connected with protected circuit connected in series, and wherein protected circuit receives AC power, and with the inductive secondary that closed-loop path is positioned in series; Wherein inductive primary and inductive secondary are inductively coupled, and make mutual inductance between inductive primary and inductive secondary; Wherein inductive secondary comprises core and is configured to modification pole low resistance (ELR) nano wire of the coiled type surrounding core at least partly; Wherein said secondary conductor coil coupling is to direct voltage source; Wherein modification ELR nano wire is formed by modification ELR film, and this ELR film has the ground floor that comprises ELR material and comprises the material modified second layer being bonded to ground floor ELR material.
A kind of equipment for the protection of electrical equipment or equipment, this equipment comprises: the first modification ELR nanometer line or belt being formed the first three dimensional coils shape, wherein the first modification ELR nanometer line or belt is formed by modification ELR film, and this ELR film has the ground floor of ELR material and is bonded to the material modified second layer of ELR material; Be formed the second modification ELR nanometer line or belt of the second three dimensional coils shape of surrounding core, wherein the second modification ELR nanometer line or belt is formed by modification ELR film, and this ELR film has the ground floor of ELR material and is bonded to the material modified second layer of ELR material; Wherein the second three dimensional coils receives DC voltage, and wherein the first three dimensional coils and the second three dimensional coils are positioned such that mutual inductance between the first three dimensional coils and the second three dimensional coils; With the output electricity port for be coupled releasedly the first three dimensional coils and protected electrical equipment or equipment; For receiving the electrical power input port of outside electric AC power; With for surrounding the first three dimensional coils and the second three dimensional coils, exporting the shell of electric port and electrical power input port.
The transformer of the 17th chapter-formed by ELR material
This chapter of specification relates to Fig. 1-36 and Figure 37-R to Figure 50-R; Therefore all reference numbers that this part comprises relate to the element found in this figure.
Desirable transformer does not have energy loss and is 100% efficiency, but conventional transformer dissipation energy in winding, core etc., normally caused by the resistance in conductor.Because most of loss is due to the resistance in winding, therefore use the existing transformer implementation efficiency of superconduction winding more than 99%.But the transformer with superconduction winding has cost needs defect, for realizing high efficiency unreliable sub-cooled.
Specifically described at this is all kinds transformer adopting winding or the inductance coil formed by modification, with holes and/or other polar low resistance (ELR) films and material, which overcomes most of problem of existing transformer and thus the close level of ideal transformer.The resistance of winding is effectively reduced to zero by transformer described here.Other losses in transformer are caused by eddy current, magnetic hysteresis loss, magnetostriction and stray magnetic field loss (strayfieldloss).Be there is no the part in these losses of direct compensation by use ELR material, but the ac loss in other losses such as winding can be reduced by use ELR material.
Various equipment, application and/or system all can adopt transformer described here, and it all adopts above-described modification ELR material.These transformers provide multiple benefit such as more effective compared with the transformer be made up of conventional material or existing HTS material.Other benefits are that transformer described here can occupy less space compared with the transformer be made up of conventional material and existing HTS material.By formed Transformer Winding modification ELR material increase current density and cause size to reduce to the demand of the reduction from these winding dissipation heats.And need sub-cooled with the transformer that HTS material is wound around, it requires that winding heat exchange changes to guarantee that all parts of winding remain on critical temperature (Tc) below.Therefore, from a small scale in the application in extensive scope, use the transformer described here of modification ERL material to provide the ability of protective circuit, step-up/down alternating voltage or other benefits.Such as, transformer described here can be used as in miniaturized electronics such as mobile phone, for the charger of the power supply compared with giant electronics such as TV or stereophonic sound system, or it can be used on large-scale application and such as delivers in the substation equipment of a few kiloampere or region electrical transmission and distribution system.
Any transformer described here can be one or more in several general type transformer, comprises autotransformer, polyphase transformer, matching transformer, isolating transformer, polyphase transformer, high-leakage reactance leak transformer, resonance transformer, boosting or step-down transformer etc.Adopt ELR material by other elements for inductor or transformer described here, in the middle of other application, the transformer finding wide range of applications in a lot of technology can be manufactured on, be used in protection or isolate in each electronic equipment and electronic system.
Transformer described here is suitable for the application of various different scales.Such as; these ranges of application are from the small-scale application of assembly or chip level (such as protective circuit or change voltage levvl); to the medium-scale application (such as in 120 volts of ac power supplys) of system or equipment grade, to the fairly large application in distributing electric power and transmission network.Before the details relating to novel transformer is provided, some details relating to some application of transformer will be provided.
About small-scale application, Figure 37-R illustrates the chip of transformer or the schematic diagram of other single chip architectures containing adopting modification ELR material.Chip 3700 is containing the circuit 3710 by protected/isolation, and it is according to operating with the step-up/down of filtering via transformer 3705 rectification.Circuit 3710 can be made up of one or more single circuit or circuit unit.In the execution mode of Figure 37-R, transformer 3805 is arranged in parallel with protected circuit 3710.But, it will be understood by those skilled in the art that transformer can multiple may any one be connected to circuit in structure, comprise and being connected in parallel, via the coupling such as electric field or magnetic field.
By adopting core on-chip transformer, chip obviously benefits from general benefit and the operation of transformer, but can enjoy other benefits a lot.By adopting ELR material in chip 3700, except other benefits, chip can enjoy larger density circuit.Such as, by adopting ELR material, chip has more low heat dissipation, and due to more multiple current can be transmitted on each conductor, therefore, it is possible to adopt more thin conductor.Conductor and/or interconnection can be manufactured by ELR material.And, owing to significantly reducing conductor insertion loss, therefore can signal transmission and do not need amplify.And, chip can be manufactured by some in smallest size ic manufacturing technology such as chip≤45nm minimum feature size technology.By the characteristic size reduced, except other benefits, based on conductor layout or length, circuit designers has less restriction, and this can promote physical Design.
About medium-scale application, Figure 38-R shows to comprise and is accommodated in shell and is connected to an example of the system 3800 of the equipment such as transformer of user's utensil.Such as, transformer 3825 to be arranged on plate (such as PCB) and to be accommodated in single shell 3820, thus forms box or electrical equipment is connected to its any electric equipment with protection/isolation and powers for it.Such as, shell 3820 can connect and the power line having projection in end opposite and be connected containing recessed in its one end.In this example, electronic equipment (such as computer or TV 3805) can be inserted into the recessed end 3810 of transformer case 3820 and be inserted in electrical socket 3840 by projecting end 3830 by user.Electronic equipment 3805 is protected by transformer 3825 and is powered afterwards.Certain transformer can with other Components integration of electronic equipment therein (such as on the printed circuit board (PCB) identical with circuitry), and to be accommodated in the inner with these other circuit thus.Thus, transformer can be contained in computer or TV 3805, instead of the discrete box in outside.
Although illustrate TV 3805, it will be understood by those skilled in the art that transformer 3825 can connect or be integrated into various subscriber equipment such as stereo equipment, alarm clock, kitchen appliance, electric tool etc.And transformer 3825 can use such as medical science or scientific equipment together with any other equipment.And, it will be understood by those skilled in the art that transformer 3825 and the connection to it can change and be not limited to calibration power output or the connection to Standard User line voltage distribution.
Transformer finds the important booster action in large-scale application such as in power network.Figure 39-R is the diagram of the power network comprising at least one transformer adopting modification ELR material.Power plant 3910 is produced as the electric current that network provides voltage.Power plant can be can generation current to be used in any one type on network, such as coal, underground heat, nuclear energy, methane, waterpower, wind-force or solar energy.After generating, the voltage rise (or " boosting ") of spontaneous power plant 3910 is to the high voltage being suitable for long range propagation, such as 230kV.Boosting occurs in high voltage switchyard 3915, and it comprises step-up transformer 3920 wherein, and it is by being wrapped in a series of coil boosted voltages around core.
Hv transmission line 3925 transmits the voltage of rising to transformer station 3930.Transformer station 3930 comprises step-down transformer 3935, and it reduces voltage to the grade such as 13.3kV being applicable to local distribution.Now on point distribution 3937, delivery distributes the step-down transformer of voltage to locating each user, such as house 3940, school 3945 or hospital 3950.Power network 3900 can comprise the intermediate transformer 3955 be coupling between step-up transformer 3915 and step-down transformer 3930.In addition, it will be understood by those skilled in the art that and more multiple transformers can be positioned in the simple network of Figure 39-R.
Figure 40-R is the schematic diagram that the transformer 4000 with modification ERL primary and secondary winding is shown.Transformer 4000 comprises magnetic core 4010, have the armature winding 4020 of primary winding coil 4025 and have the secondary winding 4030 of secondary winding coil 4035.Armature winding 4020 and secondary winding 4030 are formed by modification ELR material such as modification ELR nano wire.As mentioned above, in some instances, transformer 4000 can be a part for utility power network, and simultaneously in other examples, transformer 4000 can be boost during operation or the electrical equipment of step-down and a part for other electronic equipments.In some instances, transformer 4000 can be signal or audio frequency transformer instead of power transformer.It will be understood by those skilled in the art that and can implement transformer 4000 in these undocumented other application a lot of and equipment.It will be understood by those skilled in the art that can according to the various core layout of application implementation and winding configuration.
Utilize pole low electrical resistant material, all modification ELR materials as described in this, can be transformer 4000 and/or various application provides multiple advantage and benefit.Such as, the transformer of modification ELR material is utilized to demonstrate less resistance loss in coil, except other benefits, this greatly affects running cost by the energy loss minimizing inside transformer, avoid the problem relevant to conventional superconductor, wherein the cost of such as low-temperature cooling system and reliability simultaneously.
Figure 41 A-R shows another transformer 4100 finding to can be used in location that multiple application is included on power network.Transformer 4100 comprises the shell or housing 4115 that are coupled to circuit 4105 and load 4110.The circuit 4105 formed by conventional material or modification ELR material can connect 4145 via outside and enter transformer shell 4115.Be coupled to circuit 4105 and elementary or the first winding 4120 formed by conventional material or modification ELR material be wrapped in be positioned at transformer shell 4115 inside core 4130 around.Second winding 4125 to be wrapped in around core 4130 end opposite and can be formed by conventional material or modification ELR material.Output conductor 4150 is coupling between the second coil 4125 and load 4110.
According to application, housing 4115 can contain cooling agent such as transformer oil; But by using modification ELR material, the use of cooling agent or demand can reduce or eliminate.In addition, cooling unit 4135 can be coupled to transformer shell 4115 to cool modification ELR material 4115 to ambient temperature.Although modification ELR material can at room temperature operate under superconducting state, as said, but due to around high-voltage transmission equipment be exposed in amount of heat or warm weather and be directly exposed to sunlight and create a lot of heat, cause cooling unit 4135 to be necessary to cool modification ELR material to room temperature.And by controlling the temperature of modification ELR material, the electrical property of powerstat or response, as more specifically described at this.
According to application, the shunt 4140 of core material can be positioned between primary and secondary winding, such as, in order to limit secondary short circuited electric current.This type transformer is called high leakage reactance transformer.About Figure 41 B-R, show the high simple examples revealing reactance transformer.As shown, transformer comprises armature winding 4155 and secondary winding 4160, its each be wrapped in each lead-in wire (leg) of core 4165 around.Note, core is included in the shunt 4170 between primary and secondary winding.
Figure 42 A-R shows the three-phase core transformer 4200 finding in numerous applications to use.The first, the second and the three armature winding 4210,4220 and 4230 each comprise discrete terminal 4215,4225 and 4235.Similarly, first, second, and third secondary winding 4250,4260 and 4270 each comprise discrete terminal 4255,4265 and 4275 (Figure 42 A-R shows the sectional view of the second primary and secondary winding of the first primary and secondary winding and half).Primary and secondary winding is with wye, delta or other anatomical connectivity (especially in the transformation comprising more leggy, coil, core etc.).
First, second, and third primary and secondary winding is formed, as shown in pipe in the figure of Figure 42 A-R around core 4240.Core 4240 can be made up of several types of materials, comprises ferromagnetic material such as stainless steel, as described herein.Figure 42 B-R is the three-phase housing transformer 4280 with transformer 4200 basic simlarity, but it comprises housing core 4285 as shown.
Three-phase transformer finds application-specific in the power distribution network adopting three-phase power to distribute.Although show three-phase, be more heterogeneously also fine, any polyphase transformer can comprise the group of three or more single-phase transformers, or all phase places are attached in single polyphase transformer.Winding and the cored structure of any amount are all fine, to cause different characteristic, phase shifts or other characteristics.
Figure 43-R shows the example of autotransformer 4300, and here, the part of identical winding is used as primary and secondary.As shown, transformer 4300 comprises and is coupled to elementary 4310 of single coil 4330.Secondary 4320 comprise movable belt 4340, although two or more fixed band is fine, and the winding 4330 being wound around around core or being formed in the example of Figure 43-R.
The transformer of a lot of other types is also fine.One other be illustrated in shown in Figure 44-R, although much other examples are also fine.As shown in Figure 44-R, transformer 4400 comprises two coils 4410 and 4415, and intermediate coil 4420.Coil 4410 and 4415 is inductively coupled to coil 4420 by core 4425 and 4430, forms coil 4410 and 4415 around it respectively.Core may can be formed by material by several, comprises ferromagnetic material such as stainless steel, as the described herein.
Other geometries a lot of are also fine.Such as, helix core can be adopted.Other core geometries a lot of are known.And as the described herein, core can have a lot of different kind of material to be formed, and even partly or entirely can adopt the core of modification ELR material.
Except different core, different winding is also fine, as mentioned below.Such as, the inductance that transformer can be insulated by being made by rectangular band or bar, with suitable insulator is formed.Winding can be set in the mode of minimum leaks inductance and stray capacitance, thus improve electrical characteristics such as frequency response.And transformer can comprise the winding thus the multiple voltage ratio of permission selection with multiple band or terminal.
Whole transformer described herein is implemented, as mentioned below by least part of inductor formed by modification ELR or other materials and other assemblies.
There is the inductor of modification, with holes and/or other ELR assemblies
Describe the inductor such as hollow or core inductor that comprise the assembly formed by modification pole low resistance (ELR) film.In some instances, the inductor nano wire coil that comprises core and formed by modification ELR film.In some instances, inductor comprises core and the band that formed by modification ELR film or foil coil.In some instances, modified film ELR film is used to form inductor.Except other benefits, at the temperature higher than the temperature general relevant to current high-temperature superconductor (HTS), modification ELR film provides pole low resistance for electric current, enhances the operating characteristic of inductance machine at these higher temperatures.
In some instances, based on manufacture modification ELR film such as the application of material type, modification ELR film, the size of components adopting modification ELR film, the equipment of employing modification ELR film or the operational requirements of machine.Like this, during Design and manufacture inductor, the material of the basic unit being used as modification ELR film can be selected based on various consideration and action required and/or manufacturing characteristics and/or be used as the material of modified layer of modification ELR film.
Various equipment, application and/or system can adopt modification ELR inductor.In some instances, adjustment or resonant circuit and application thereof adopt modification ELR inductor.In some instances, transformer and application thereof adopt modification ELR inductor.In some instances, energy storage device and application thereof adopt modification ELR inductor.In some instances, current limiting device and application thereof adopt ELR inductor.
Figure 45-R is the figure that the hollow inductor 4500 with modification ELR film is shown.Inductor 4500 comprises coil 4510 and hollow 4520.When coil 4510 carrying current (such as in the direction on the right side of the page), in core 4520, produce magnetic field 4530.Figure 45-R is the figure that the hollow inductor 4500 with modification ELR film is shown.Inductor 4500 comprises coil 4510 and hollow 4520.When coil 4510 carrying current (such as on the direction on the right side of the page), in core 4520, produce magnetic field 4530.Coil is formed by modification ELR film at least in part, such as has ELR material base layer and the film being formed in the modified layer in basic unit.Various suitable modification ELR film is specifically described at this.
Voltage can be applied to modification ELR coil 4510 by battery or other power supply (not shown), causes electric current to flow in coil 4510.By being formed by modification ELR film, at the temperature that the temperature used in than traditional HTS material is high, under such as room temperature or ambient temperature (~ 21 DEG C), coil 4510 provides resistance on a small quantity or not for the electric current in coil provides.Electric current in coil produces magnetic field in core 4520, and it can be used for stored energy, transmits energy, limits energy etc.
Because inductor 4500 comprises the coil 4510 formed by pole low electrical resistant material (i.e. modification ELR film), therefore this inductor similarly can operate with ideal inductor, here, owing to usually there is the winding or series resistance that find in the inductor of conventional conductive coil (such as copper coil), coil 4510 is caused to demonstrate a small amount of or do not have loss, and no matter by the electric current of coil 4510 how.That is, inductor 4500 can demonstrate very high quality (Q) factor (such as close to infinitely great), and it is the ratio of inductive reactance and reactance under given frequency, or Q=(inductive reactance/reactance).
In some examples, at the temperature between the transition temperature (~ 80to135K) and room temperature (~ 294K) of traditional HTS material, modification ELR coil provides pole low resistance for electric current.In these examples, inductor can comprise cooling system (not shown), such as subcolling condenser or cryostat, for the critical temperature of the modification ELR film type that cooling coil 4510 to coil 4510 utilizes.Such as, cooling system can be can cooling coil 4510 to the temperature similar to liquid fluorine Leon boiling point, to the temperature similar to aqueous fusion point, or other temperature discussed herein.That is, can based on the type of the modification ELR film adopted in coil 4510 and structure choice cooling system.
In some instances, hollow 4520 is self-supportings.In other examples, hollow 4520 is wrapped on nonmagnetic substance or structure (not shown), such as plastics or pottery.Material or the shape of core can be selected based on various factors.Such as, select that there is the density that the infiltrative core material higher than air permeability can increase caused magnetic field 4530 usually, and increase the inductance of inductor 4500 thus.In another example, by reducing the selection of the demand management core material of the core loss of frequency applications.It will be understood by those skilled in the art that core can be formed by multiple different materials and can be formed multiple difformity, realize some desirable characteristics and/or operating characteristic.
As known in the art, the structure of coil 4510 can affect some operating characteristic such as inductance.Such as, the number of turns of coil, the cross-sectional area, loop length etc. of coil can affect the inductance of inductor.Thus, although not shown in one structure, can operating characteristic (such as inductance value) to realize some but inductor 4500 can be configured in many ways, to reduce some undesirable impact (such as, skin effect, approach effect, parasitic capacitance) etc.These technology can be used for the self-resonant frequency and the qualitative factor (Q) that increase inductor usually.
In some instances, coil 4510 can comprise a lot of circles parallel to each other.In some instances, coil can comprise several circles with angle wound different from each other.Thus, coil 4510 can be formed as multiple different structure, such as honeycomb or basket weave figure, wave winding etc., here, continuous coil is intersected with each other with different angles, cobweb figure, pi winding (piwinding) etc., here, coil is formed by the smooth helical coil be spaced apart from each other, and as twisted wire, multi-strand cable is insulated from each other to reduce ac resistance etc. here.
Except hollow inductor, core inductor such as inductor 4600 also can use modification ELR film, as will now be discussed.Figure 46-R is the schematic diagram that the core inductor 4800 adopting modification ELR film is shown.Inductor 4600 comprises coil 4610 and magnetic core 4620 is such as formed by ferromagnetic or ferromagnetic material.Similar to the inductor 4700 of Figure 47-R, when by coil 4610 loaded current, in magnetic core 4620, produce magnetic field 4630.Coil is formed by modification ELR film at least partly, such as has ELR material base layer and the film being formed in the modified layer in basic unit.Various suitable modification ELR film is being specifically described at this.By being formed by modification ELR film, under the temperature such as room temperature or ambient temperature (~ 21 DEG C) that use in higher than traditional HTS material, coil 4610 provides resistance on a small quantity or not for electric current provides.Electric current in coil produces magnetic field 4630 in magnetic core 4620, and it can be used for stored energy, transmits energy, limits energy etc.
Because the magnetic permeability in produced magnetic field 4630 is higher than the permeability of air, and thus because the magnetization of magnetic material causes more supporting to form magnetic field 4630, the magnetic core 4620 therefore formed by ferromagnetic or ferromagnetic material increases the inductance of inductor 4600.Such as, magnetic core can 1000 or larger factor increase inductance.
Inductor 4600 can utilize various different materials in magnetic core 4620.In some instances, magnetic core 4620 is formed by ferromagnetic material such as iron.In some instances, magnetic core 4620 is formed by ferromagnetic material such as ferrite.In some instances, magnetic core 4620 forms such as silicon stainless steel lamination by the magnetic material of lamination.It will be understood by those skilled in the art that the needs according to inductor 4600 and demand, can other materials be used.
Than outward, magnetic core 4620 (and, thus, inductor 4600) can be configured to various dissimilar.In some instances, magnetic core 4620 can be shaft-like or cylinder.In some cases, magnetic core 4620 can be annular.Magnetic core 4620 is moveable in some cases, and inductor 4600 can be made to realize various inductance.It will be understood by those skilled in the art that and can use other shapes and structure according to the needs of inductor 4600 and demand.Such as, can construct magnetic core 4620 to limit various defect, wherein, such as at the core loss caused due to eddy current and/or hysteresis, and/or inductance is non-linear.
Thus, in some instances, except other benefits, by reducing or eliminating the resistance to electric current in coil, the coil using modification ELR material and/or assembly such as modification ELR film to form inductor increases the Q factor of inductor.
Manufacture and/or form the inductor be made up of ELR material
As said, in some instances, owing to being formed by modification ELR material such as modification ELR material, ELR material with holes and/or other new E LR materials, therefore the electric current of inductor coil to carrying demonstrates pole low resistance.Figure 47 R is the figure that the inductor 4700 adopting modification ELR nano wire is shown.Inductor 4700 comprises the coil 4702 being formed the modification ELR nano wire be made up of the ELR film of ELR assembly described here such as modification.
In formation ELR lead-in wire, multiple ELR band or paper tinsel can clip together to form micron order lead-in wire.Such as, coil can comprise supporting construction and the one or more ELR that supported by supporting construction are with or paper tinsel.
Except ELR lead-in wire, inductor can be formed by ELR nano wire.In traditional, nano wire is that width and diameter have a nanostructure of usual unstrained length at the following order of magnitude of tens nanometers.Under certain situation, ELR material can be formed as the nano wire with 50 nano-widths and/or the degree of depth.Under certain situation, EIR material can be formed as the nano wire with 40 nano-widths and/or the degree of depth.Under certain situation, ELR material can be formed as the nano wire with 30 nano-widths and/or the degree of depth.Under certain situation, ELR material can be formed as the nano wire with 20 nano-widths and/or the degree of depth.Under certain situation, ELR material can be formed as the nano wire with 10 nano-widths and/or the degree of depth.Under certain situation, ELR material can be formed as the nano wire with 5 nano-widths and/or the degree of depth.Under certain situation, ELR material can be formed as the nano wire with the following width of 5 nanometer and/or the degree of depth.
Except nano wire, also improve ELR band or paper tinsel by inductor described here and equipment utilization.Figure 49-R illustrates the inductor 4810 adopting modification ELR band or paper tinsel.Inductor 4810 comprises core 4812 such as iron core, and is with the magnetic core 4814 formed by modification ELR.
Have for the production of the multiple technologies with the band and/or paper tinsel that manufacture ELR material.In some instances, this technology is included in coating and deposits YBCO or another ELR material by the flexible metal band of buffering metal oxide, forms the conductor of coating.During processing, such as by using rolling to assist biaxial texture substrate (rolling-assisted, biaxially-texturedsubstrates) (RABiTS) technique, structure can be incorporated in metal tape self, or by using particle beams assistant depositing (IBAD) technique, instead on the alloy substrate of non-configuration, deposit textured ceramic resilient coating by means of the particle beams.Adding oxide layer prevents metal to be diffused into ELR material from band.Other technologies can utilize chemical vapour deposition (CVD) CVD technique, physical vapour deposition (PVD) (PVD) technique, atom successively molecular beam epitaxy (ALL-MBE) and other solution deposition techniques to manufacture ELR material.Except nano wire, be also with or paper tinsel by inductor described here or equipment utilization modification ELR.
And film inductor can utilize ELR assembly described here.Figure 49-R is the schematic diagram that the inductor 4920 adopting modification ELR film assembly is shown.Inductor 4920 comprises and is formed in modification ELR coil 4922 on printed circuit board (PCB) 4924 and optional magnetic core 4926.According to the employing equipment of this inductor or the demand of system, this coil 4922 that can be the modification ELR film be etched in plate 4924 is formed as various structures and/or figure.And, optional magnetic core 4926 can be etched into plate 4924, as shown, or have the plane core (not shown) being arranged on side above and/or under coil 4922.
In order to form transformer, the second inductor or coil can be formed near inductor 4920.Alternatively or additionally, can form the second inductor below inductor 4920, two conductors are formed in same substrate, such as printed circuit board (PCB).As noted at this, the transformer response of approximate ideal can be realized by modification ELR material described here, and can air-core transformer be accepted for a lot of application thus.
Generally, modification ELR film can be formed as band, paper tinsel, bar, bar, nano wire, film and other shapes or the structure that move or carry electric current can be put, to produce magnetic field from a point to another.
In some instances, by utilizing the application type of this film to determine to be used in the material type in modification ELR film.Such as, some applications exploitings have the modification ELR film of BSCCOELR layer, and other applications exploitings YBCO layer.Namely, in the middle of other factors, based on machine or the component type utilizing this modification ELR film, modification ELR film described here can be formed as some structure (such as band or nano wire), and be formed by some material (such as YBCO or BSCCO).
At the manufacture all inductors as described in this of inductor with various technique can be adopted in transformer described here thus.In some instances, formed, safeguard, receive and/or locating core.This core can adopt various shape or structure.Configuration example comprises cylindrical bar, single " I " shape, " C " or " U " shape, " E " shape, a pair " E " shape, some shape, toroidal, annular or globule shape, planar shaped etc.Core can be formed by various non magnetic or magnetic material.Examples of materials comprises iron or soft iron, silicon steel, various laminated material, silicon alloy, carbon back iron, iron powder, ferrite ceramics, the nature of glass or amorphous metal, pottery, plastics, air etc.
In addition, the coil that at least one coil is such as formed by modification ELR nano wire, band or film is configured to required form or figure and is coupled to core that is formed or that safeguard.In some instances, there is no core, and modification ELR nano wire is configured to required form or figure.In some instances, modification ELR nanocoil is directly etched into printed circuit board (PCB), and about etched coil location planar magnetic core.Other manufacturing process can be utilized when it will be understood by those skilled in the art that when manufacture and/or form inductor described here.
Although generally described single transformer for each application, two or more transformer can be provided in given chip, house, network transformer station or other environment.In fact, given environment can adopt one or more chips with one or more disclosed transformers, and it is attached in one or more house conversely, and it can further combined with in such as power distribution network in fairly large environment.Certainly, available ELR material and traditional material manufacture transformer described here.
There are other transformer application of ELR assembly
Transformer mentioned above is suitable for use in multiple application, and scope comprises and is used on chip, is used in power network.By adopting modification ELR material in this transformer, under condition of similarity, transformer provides magnitude to be less than the resistance of best normal conductor.
As mentioned above, modification ELR material has the performance depending on temperature.As a result, the transformer described here of modification ELR material is adopted similarly to depend on temperature.Influence of temperature change field penetrates in conductor, and this can affect superconduction depth of penetration.For modification ELR material described here, can based on this change of temperature to respondent behavior moulding material, or can from empirically obtaining.Note, by adopting modification ELR material, line resistance is insignificant, but can regulate this resistance based on temperature, as shown in the thermometer that provides at this.Therefore, powerstat design with compensation temperature, or regulates transformer to export by changing temperature.
With reference to figure 50-R, show system 5000 example (although all chunks are all interconnection shown in Figure 50-R, less connection is also fine) of the circuit 5010 and logic 5020 comprising and be coupled to temperature-control circuit 5015.Circuit 5010 adopts one or more transformer described here, and it is formed by ELR material at least in part.Logic control temperature-control circuit, it is controlled cooling model device/freezer unit such as low temperature or liquefied gas cooler conversely, its cooling circuit 5010.Thus, in order to increase susceptibility or the response of system 5000, logic 5020 sends a signal to temperature-control circuit 5015 to reduce the temperature of circuit 5010.As a result, adopt the circuit 5010 of ELR material to cause ELR material to increase conductivity, thus increase circuit sensitivity, response or efficiency.
Although show single transformer, multiple transformer can combine to form transformer group or array, or the voltage transformer system of other complexity.About other kinds of transformer described here, a lot of structures of transformer are all fine, and are that the design that designer is carried out up to transformer that small part formed by modification ELR material or multiple transformers system is considered.Modification ELR material described here is used in multiple transformers system, and this system comprises the combination of two or more transformer and principle described here, even without clearly describing these combinations.In fact, this multiple transformers system can adopt two or more dissimilar or different types of transformer, is not simply similar or with kind transformer.This voltage transformer system can comprise all by modification ELR material formed relatively with kind transformer, or the variety classes mixing of dissimilar transformer, some transformers are formed by non-ELR material, or different transformer and combination of different materials.Thus, two or more transformers that complex transformer system can adopt the two or more similar transformer by being formed primarily of modification ELR material to be formed, the two or more variety classes transformers by being formed primarily of modification ELR material, and/or the two or more same kind/variety classes transformer formed by conventional conductor and modification ELR material.
Although there is described herein the concrete example of the transformer adopting the some or all of assembly formed by modification ELR material, but it will be appreciated by those skilled in the art that, in fact any transformer device structure or geometry can be taken to the assembly that small part is formed by modification ELR material, such as those assemblies listed above, such as with conduction current, or launch or revise electromagnetic signal (although ELR material can use together with a conducting element in circuit, but can understand further, according to the definition of people to " conduction ", modification ELR material promotes that energy or signal are propagated along its length or area).As a result, exhaustive list all possible transformer and the voltage transformer system of the assembly formed by modification ELR material can not be adopted.
Although to illustrate for some transformers at this and describe some suitable geometries, limit other geometries many are also fine.These other geometries not only comprise about the different graphic of length and/or width, structure or layout, also comprise the different-thickness of material, use different layers and other three-dimensional structures (such as in the type of coil and core).This present inventor contemplates in fact all transformers and related system as known in the art can adopt modification ELR material, and believe that the those skilled in the art of each example providing ELR material, transformer and the application's principle are not when carrying out undue experimentation, can implement other transformers, it has the one or more assemblies formed by modification ELR material in whole or in part.
In some embodiments, the transformer comprising modification ELR material is described below:
A kind of transformer, comprising: primary coil; With the secondary coil being inductively coupled to primary coil; Wherein at least secondary coil comprises core and is configured to modification pole low resistance (ELR) nano wire of the coiled type surrounding core at least partly; Wherein modification ELR nano wire is formed by modification ELR film, and this ELR film has the second layer of the ground floor comprising ELR material and the material modified formation being bonded to ground floor ELR material.
Manufacture a method for transformer, the method comprises: extend conductor arrangement by first and become the first three-dimensional line round; Extend conductor arrangement by second and become the second three-dimensional line round, wherein first and second extend conductors each comprise ELR material ground floor and by chemical bonding to the material modified second layer formed of ground floor ELR material; First three-dimensional line round is arranged near the second three-dimensional line round to cause inductance coupling high therebetween.
A kind of method manufacturing transformer, the method comprises: receive the first modification ELR nanometer line or belt, wherein the first modification ELR nanometer line or belt is formed by modification ELR film, and this ELR film has the ground floor of ELR material and is bonded to the material modified second layer of ELR material; Receive the second modification ELR nanometer line or belt, wherein the second modification ELR nanometer line or belt is formed by modification ELR film, and this ELR film has the ground floor of ELR material and is bonded to the material modified second layer of ELR material; First modification ELR nanometer line or belt is formed as the first three dimensional coils shape as armature winding; Use the first three dimensional coils to form transformer, and the second modification ELR nanometer line or belt is formed as secondary winding; Wherein primary and secondary winding is positioned such that to cause inductance alternately in period.
A kind of equipment, comprising: be wrapped in the first three dimensional coils around the first core at least partly; Be wrapped in the second three dimensional coils around the first or second core at least partly; Wherein the first three dimensional coils and the second three dimensional coils each comprise the Part I with pole low resistance (ELR) material and be bonded to the Part II that Part I reduces ELR material resistance; Wherein the first three dimensional coils and the second three dimensional coils inductance coupling high.
Be used in the transformer in electrical power distribution net, comprise: be connected to the primary coil that power supply produces power supply downstream; With the second coil; Wherein primary coil and secondary inductance are coupling in it and make to cause inductance alternately between primary coil and secondary coil; Wherein primary coil and secondary coil size and structure are configured to be suitable for the curtage higher than the curtage relevant to the electrical power being provided to standard-family user; Wherein, at least secondary coil comprises core and is configured to modification pole low resistance (ELR) nano wire of the coiled type surrounding core at least partly; Wherein modification ELR nano wire is formed by modification ELR film, and this ELR film has the ground floor that comprises ELR material and by the material modified second layer formed being bonded to ground floor ELR material.
Manufacture is used in a method for the transformer in electrical power distribution net, and the method comprises: extend conductor arrangement by first and become the first three-dimensional line round, extend conductor arrangement by second and become the second three-dimensional line round, wherein first and second extend conductors each comprise ELR material ground floor and by chemical bonding to the material modified second layer formed of ground floor ELR material, with, relative to each other locate the first and second three dimensional coils shapes, make the inductance caused alternately between the first three-dimensional line round and the second three-dimensional line round, with, wherein the first three-dimensional line round and the second three-dimensional line round size and structure are configured to be applicable to the curtage than the curtage relevant to the electrical power being provided to standard-family user high at least 30%.
A kind ofly be used in the equipment used in utensil or equipment or together with this utensil or equipment, this equipment comprises: the first modification ELR nanometer line or belt being formed the first three-dimensional line round, wherein the first modification ELR nanometer line or belt is formed by modification ELR film, and this ELR film has the ground floor of ELR material and is bonded to the material modified second layer of ELR material; Be formed the second modification ELR nanometer line or belt of the second three-dimensional line round, wherein the second modification ELR nanometer line or belt is formed by modification ELR film, this ELR film has the ground floor of ELR material and is bonded to the material modified second layer of ELR material, and wherein the first three dimensional coils and the second three dimensional coils are positioned such that to cause inductance alternately between the first three dimensional coils and the second three dimensional coils; For the output electric terminal of be coupled the first three dimensional coils and protected utensil or equipment; With the electrical power input terminal for receiving external electric power, wherein input terminal is coupled to the second three dimensional coils.
A kind of semiconductor chip, comprising: substrate; With the transformer be formed on substrate, wherein this transformer comprises: the first three dimensional coils; Second three dimensional coils; Wherein the first three dimensional coils and the second three dimensional coils each comprise the Part I with pole low resistance (ELR) material and be bonded to the Part II that Part I reduces ELR material resistance; Wherein the first three dimensional coils is together with the second three dimensional coils inductance coupling high.
The transmission line that 18th chapter is formed by ELR material
These chapters and sections of specification relate to Fig. 1-36 and Figure 37 A-S to Figure 40 B-S; Therefore, all reference numbers that this part comprises all represent the element found in these figure.
Describe a kind of the power delivery assembly such as power transit line, lead-in wire and/or the cable that adopt pole low resistance (ELR) material.Except other benefits, the ELR material that can be modification ELR material, ELR material with holes etc. can make power delivery assembly launch to another position from a position, deliver and/or through-put power, and the resistance loss of resistance loss or generation reduction can not occur.
As the described herein, needing from a position to the public network or other system of another location transmission power, utilize some or all in modification described here and/or ELR material with holes by power delivery assembly such as power transit line, lead-in wire and/or cable.Figure 37 A-S and 37B-S shows the power distribution system utilizing pole low resistance (ELR) material.
Figure 37 A-S describes power transmission system 3700.Power transmission system 3700 comprises power supply 3710, transmission line 3720 and receiver (recipient) 3730.Power supply 3710 can be energy generation apparatus and/or energy storage device.Such as, power supply 3710 can be electrostatic apparatus, electromagnetically induced equipment (such as generator, DC generator, alternating current generator, superconduction magnetic energy stores (SMES) equipment etc.), electrochemical apparatus (such as battery, capacitor, fuel cell etc.), photoelectric effect equipment (such as solar energy or photovoltaic cell etc.), thermoelectric effect equipment (such as thermocouple, thermoelectric pile etc.), piezoelectric effect equipment, nuclear engine, green or renewable energy source device (such as wind turbine, tide equipment etc.), and/or can produce, store and/or provide energy with other equipment in systems in which.
Recipient 3730 can be the entity by any entity such as load of power transmission system 3700 received energy, system node or other assemblies and/or received energy.Recipient 3730 can be residence, electronic equipment, micronetwork or other-end user.Such as, recipient 3730 can comprise from transmission line 3720 carrying current and transmit it to the distribution system network of user.Usually, distribution system network comprises intermediate voltage (lower than 50kV) power line, transformer station, the transformer be arranged on electric pole, low pressure (lower than 1kV) point distribution, electricity meter etc.
Transmission line 3720 can be one or more overhead power line, one or more underground power line, or from a position to other cables of another Question Transmission energy and/or lead-in wire.In some instances, transmission line 3720 comprises modification and/or ELR material with holes, all if at ambient temperature and pressure with the ELR material described here of pole low resistance transmission current.
Power transmission system 3700 can comprise other assemblies being configured to adjustment, control, disconnection, switch and/or assisting in addition from a position to another location transmission energy, such as in public network.Figure 37 B-S describes power transmission system 3750, and except power supply 3710, transmission line 3720 and energy acceptance side 3730, it also comprises transformer 3740.
Power transmission system 3750 comprises the transformer 3740 that can be used for increasing and/or reduce the voltage relevant to being transmitted energy.Such as, due to the resistance in transmission line conducting element, cause under high pressure transmission current usually can reduce energy loss.That is, for the power of specified rate, boosted voltage reduces electric current, and reduces the resistance loss in conducting element thus.Such as, electric current can be reduced with corresponding factor 10 with factor 10 boosted voltage, and therefore, the resistance loss of reduction factor 100.
Power transmission system 3700 and/or 3750 can comprise other assemblies unshowned in Figure 37 A-S to Figure 37 B-S, such as fault current controllers, fault current limiter, transformer station, information collecting device etc.In some instances, ELR material described here is utilized can to make this system transfers energy as the Ampereconductors in the transmission assembly such as transmission line 3720 of this system and not boosted voltage, to prevent some resistance loss.Thus, in these examples, the transmission line 3720 based on ELR described here can make power transmission system under low pressure through-put power, and except other benefits, this makes the structure of transmission system and safeguards safer, more effectively and more cheap.The transmission line 3720 based on ELR will be discussed now.
Figure 38-S is the schematic diagram 3800 that each layer in power transit line is shown.Power transit line such as power transit line 3720 can contain multiple different layers, and comprise the conductive layer 3830 based on ELR, it can comprise ELR layer 3832 and one or more modified layer 3834, all as described in this those.
In addition, power transit line can comprise substrate layer 3810, resilient coating 3820, conductive bypass separator layer 3840 and insulating barrier and/or stabilized zone 3850.Such as, resilient coating 3820 can be formed by magnesium oxide (MgO), bypass layer 3840 can be formed by silver, and/or stabilized zone 3850 can be formed by copper.
In some instances, the cable based on ELR can comprise the multilayer 3810-3850 that form is one or more band, and is manufacturing other assemblies being applicable to utilizing in the cable of transmission current.Figure 39-S is the sectional view of the power delivery cable 3900 of the transfer element comprised based on ELR.Except multilayer 3810-3850, cable 3900 is included in addition between the district around inner area 3910 and cable 3900 and provides heat-insulating thermal insulation layer 3920, and the district around this cable 3900 is such as the district of cover layer 3930 outside of cable 3900.
In some instances, the cable 3900 based on ELR can comprise the one or more bands formed by the layer 3810 be wrapped in around one or more bobbin, and this bobbin provides the support structure of cable 3900 inner band.Although not shown, cable 3900 can comprise other layers multiple such as insulating barrier, screen, supporting layer, protective layer, conductive layer, articulamentum etc.In some instances, multiple bobbins of the band based on ELR supporting one or more winding can be comprised based on the cable 3900 of ELR.
In some instances, ELR material in cable 3900 is at the temperature between the temperature (such as ~/0to135K) and ambient temperature (such as ~ 275Kto313K) of traditional HTS material, such as between 150K and 313K or higher, pole low resistance is demonstrated to electric current.In these examples, the cable 3900 based on ELR can utilize cooling system 3940 such as subcolling condenser or cryostat, for cooling the region 3910 holding ELR material in cable 3900.For the modification ELR material type that this equipment uses, cooling system 3940 is suitable for ELR material to remain on critical temperature.Such as, cooling system 3940 can be can cool ELR element to the temperature similar to fluorine boiling point, the temperature similar to water capacity point, lower than the temperature of ELR element environment or the system of other temperature discussed herein.That is, can according to based on the type of the ELR material in the cable 3900 of ELR and this cooling system 3940 of structure choice.
As described in this, in some instances, at temperature such as between 150K and 313K of ambient temperature or other high temperature or higher temperature, the electric current of conductive layer 3930 to delivery based on the cable of ELR demonstrates pole low resistance.Although it will be understood by those skilled in the art that conductive layer 3830 can be formed as that multiple different structure such as goes between, nano wire etc., in some instances, it can form to use together with the power transit line based on ELR by based on the band of ELR and/or paper tinsel.
Have for the production of the multiple technologies with the band and/or paper tinsel that manufacture ELR material.In some instances, this technology be included in be coated with buffering metal oxide flexible metal band on deposit YBCO or another ELR material, formed " conductor of coating ".During processing, such as by using rolling to assist biaxial texture substrate (rolling-assisted, biaxially-texturedsubstrates) (RABiTS) technique, structure can be incorporated in metal tape self, or by using ion beam assisted depositing (IBAD) technique, instead on the alloy substrate of non-configuration, deposit textured ceramic resilient coating by means of ion beam.Adding oxide layer prevents metal to be diffused into ELR material from band.Other technologies can utilize chemical vapour deposition (CVD) CVD technique, physical vapour deposition (PVD) (PVD) technique, atom successively molecular beam epitaxy (ALL-MBE) and other solution deposition techniques to manufacture ELR material.
In some instances, the application type of this material is utilized can to determine to be used in the material type in ELR material.Such as, some applications exploitings have the ELR layer of BSCCOELR layer, and other applications exploitings YBCO layer.Namely, in the middle of other factors, based on equipment or the component type utilizing this modification ELR material, ELR material described here can be formed as some structure (such as band or nano wire), and be formed by some material (such as YBCO or BSCCO).
Various manufacturing process is adopted when the formation power transit line moment described here.Such as, the ground floor of ELR material can be deposited on and there is buffer oxide such as MgO be formed on the metal tape on its surface.Afterwards by material modified second layer deposition on the first layer.Afterwards protective layer is deposited in modified layer, such as silver or another kind of conducting metal.Form stabilized zone on the protection layer afterwards, such as layers of copper.In some cases, in power transit line, screen, insulating barrier, protective layer and other layers is also formed.
Such as, the hop of power delivery cable can comprise the band based on ELR of spiral wound around bobbin or other foundation structure.Electric insulation layer subsequently covers the band based on ELR, and screen covers insulating barrier, and protective layer covers screen, forms the conductive cores of power delivery cable.One or more conductive cores can be positioned at cable enclosure interior.Under certain situation, housing can thermal insulation cooling system a part and be coupled to cooling system, at the temperature that this cooling system is configured to keep the temperature around the inner and one or more conductive cores of cable to be in lower than power delivery cable surrounding temperature.
Certainly, it will be understood by those skilled in the art that manufacture the band based on ELR described here, conductive cores, power delivery cable and/or transmission line assembly during can utilize other techniques.
Although illustrated the power delivery cable used in long distance power delivery in Figure 39-S, the transmission line based on ELR described here can be a part for other Energy Transfer assemblies various.The example of the transmission line of ELR material described here can be utilized to comprise the power terminal, main terminal and/or the line terminals that electronic equipment are connected to wiring, power communications cable etc. in power supply such as socket, structure.
Connect the power transit line based on ELR
Sometimes, due to fault connection, inappropriate bending and other coupled problems, cause a transmission line based on ELR to be connected to another transmission line based on ELR or conventional transmission line, and can not the large energy of loss.Figure 40 A-S and 40B-S illustrates the schematic diagram based on connecting between the power transit line of ELR and other transmission assemblies.
Figure 40 A-S transmission line 3800 described based on ELR is connected to the end view of the system 4000 of the conventional transmission line 4010 with metallic conductor 4020 such as copper and other non-conductive layers 4030.Connect 4000 and arrange each layer in the conducting element 3830 of the transmission line 3800 based on ELR, comprise ELR layer 3832 and modified layer 3834, there is the metallic conductor 4020 of conventional transmission line 4010.Wherein, this arrangement promotes from stable (robust) electric energy transmitting of transmission line 3800 to conventional transmission line 4010 based on ELR.
Figure 40 B-S describes the system 4040 of the transmission line A based on ELR with the transmission line B be connected to based on ELR.Coupling assembling 4050 is coupled to line A and line B, and comprises conductor 4052 and insulating barrier 4054.Conductor 4052 can be conventional conductor such as copper or aluminium, or can be formed by some or all of ELR material described here.Wherein, thicker than the conducting element 3830 of transmission line conductor promotes from a transmission line 3800 based on ELR to another stable transmission electric energy.Under certain situation, there is connection in modification and/or between ELR material with holes and current HTS or LTSELR material.
Under certain situation, this connection can be formed by multiple step, diagonal orientation and/or parallel lapp node.This structure can increase the connection area between assembly and/or be minimized in the heat of tie point generation.
Thus, ELR material described here can realize exploitation and the use of power transit line such as overhead and/or underground power cable, and in the middle of other benefits, it transmits electric current with pole low resistance and does not need expensive cooling system.Because the high-voltage power transmission scheme relying on resistance loss in reduction transmission is no longer necessary, therefore cause this use can realize the power transmission system simplified.Therefore, in the middle of other benefits, the material based on ELR can realize more low-voltage, higher electric current, more effective, safer, cost is effectively and more reliable power transmission system more.Such as, wherein, ELR material is used can to promote to widely use DC power.
In some embodiments, the transmission line comprising modification ELR material is described below:
A kind of transmission line, comprising: substrate layer; Form resilient coating on the substrate layer; And conductive layer, wherein conductive layer is formed by modification pole low resistance (ELR) material.
Form a method for power transit line, the method comprises: the ground floor forming ELR material on substrate; The material modified second layer is formed with on the ground floor of ELR material.
Be configured to the power delivery assembly to second place transmission current from primary importance, comprising: conducting element, wherein conducting element comprises: the ground floor of ELR material with holes; With the material modified second layer; The wherein material modified characteristic making ELR material with holes demonstrate the raising exceeding the ELR material behavior without modified layer.
A kind of transmission line, comprising: substrate layer; Form resilient coating on the substrate layer; Form conductive layer on the buffer layer, wherein conductive layer is formed by modification pole low resistance (ELR) material; And temperature components, wherein temperature components is configured to keep the temperature of conductive layer to be in temperature lower than transmission line environment temperature.
Form a method for power transit line, the method comprises: form housing; The ground floor of ELR material is formed on the substrate in housing; The ground floor of ELR material forms the material modified second layer; Be coupled to cooling package with by housing, this cooling package is configured to keep case temperature to be in temperature lower than casing surroundings temperature.
A kind of power delivery assembly, it is configured to from primary importance to second place transmission current, and comprising: conducting element, wherein conducting element comprises: the ground floor of ELR material with holes; With the material modified second layer; The wherein material modified characteristic making ELR material with holes demonstrate the raising exceeding the ELR material behavior without modified layer; And cooling package, wherein temperature components is configured to keep conducting element temperature to be in temperature lower than power delivery assembly environment temperature.
Transmit a method for electric current to recipient from energy source, the method comprises: be input to by the energy received from energy source in the transmission line formed by modification pole low resistance (ELR) material; Input energy is received with the transmission line from one or more recipient.
For a system for delivering power between system components, comprising: power supply, power interface debit; And transmission line, wherein transmission line comprises and is configured under standard pressure, at the temperature between 150K and 313K, with pole low resistance from power supply to the modification pole low electrical resistant material of power interface debit delivering power.
For a method for through-put power in public network, the method comprises: received power is in the transmission line with the conductive cores formed by modification pole low resistance (ELR) material; With transmitted the power received with pole low resistance via conductive cores by transmission line.
A kind of power cable, comprising: housing, its middle shell contains by the following conductive cores formed: substrate layer, form resilient coating on the substrate layer; Form conductive layer on the buffer layer, wherein conductive layer is formed by modification pole low resistance (ELR) material; And temperature components, under wherein temperature components is configured to the temperature keeping the temperature in housing to be in lower than casing surroundings temperature.
Be configured to the power delivery cable transmitting electric current from primary importance to the second place, comprise: housing, and conductive cores, wherein conductive cores comprises: bobbin; And the conducting element be wrapped in around bobbin, wherein conducting element comprises: the ground floor of ELR material with holes; With the material modified second layer; The wherein material modified characteristic making ELR material with holes demonstrate the raising exceeding the ELR material behavior without modified layer.
A kind of power cable, comprising: pole low resistance (ELR) is with, and wherein ELR band comprises: the substrate formed by metal; Form resilient coating on metallic substrates; With the conductive layer formed on the buffer layer, wherein conductive layer is formed by modification pole low resistance (ELR) material.
A kind of power transmission system, comprising: energy source; Comprise the transmission line of modification pole low resistance (ELR) material; With energy acceptance side.
The power cable used together with public network, comprising: pole low resistance (ELR) is with, and wherein ELR band comprises: the substrate formed by metal; Form resilient coating on metallic substrates; With the conductive layer formed on the buffer layer, wherein conductive layer is formed by modification pole low resistance (ELR) material.
For entering to receive a power cable for power supply by electric equipment, comprising: pole low resistance (ELR) is with, wherein ELR band comprises: the substrate formed by metal; Form resilient coating on metallic substrates; With the conductive layer formed on the buffer layer, wherein conductive layer is formed by modification pole low resistance (ELR) material.
Thus, as described in 1-18 chapter, various electronics, machinery, calculating and/or other equipment can adopt and/or comprise the assembly formed by modification ELR material, all modification ELR materials as described in this.
Unless context is in addition requirement clearly, otherwise runs through this specification and claims, think that word " comprises ", " comprising " etc. be the meaning contained, contrary with exclusive or exhaustive implication; Namely saying, is the meaning of " including but not limited to ".As used in this, term " connection ", " coupling " or its random variation are meant to direct or indirectly any connection or the coupling between two or more element; The coupling connected between element can be physics, logic or its combination.Than outward, when using in the application, word " at this ", " above ", " hereafter " and the word of similar implication should refer to the application's entirety, and do not refer to any specific part of the application.When context allows, the word in the specific descriptions above of odd number or plural number is used also to comprise plural number or odd number respectively.In the reference of the list of two or more, word "or" covers all following explanations of this word; Any combination every in all items in Arbitrary Term in this list, this list and this list.
The specifically describing above and be not intended to exclusive or be precise forms mentioned above by this system constraint of this exemplary system.Although above in order to illustration purpose describes embodiment and the example of this system, the various equivalent modifications in this system scope are also fine, as various equivalent modifications approved.
Can be applicable to other system in the instruction of this system provided, and need not to be above-described system.The element of above-described each example and action may be combined with to provide other em-bodiments.
The above-mentioned patent of the arbitrary content listed in appended application documents and the full content of application and other references is comprised by reference to combination.If necessary, each side can revising this system is to adopt the system of above-described each reference, function and design to provide this system other execution mode.
These and other changes can be made to system above according to specifically describing.Although describe the details giving this some embodiment of system above and describe desired best mode, no matter in the body of the email how concrete foregoing is, much mode can put into practice this system.Been considerably can change the details of the back-up system based on this locality in its execution mode details, simultaneously still include by system disclosed herein.As described above, do not adopt the particular term used when describing some feature of this system or aspect, thus hint this redefined this term be restricted to this system be correlated with any concrete property, feature or this system in.Usually, should not think that the term used in claims which follow limits this system for specific embodiment disclosed in this specification, unless embodiment part clearly limits this term above.Therefore, the actual range of this system not only comprises the disclosed embodiments, but is also included within all equivalent way that right more asks lower practice or implement this system.
Although hereafter propose some aspect of this technology with some claim formats, this present inventor contemplates each side of this technology of any claim formats.Therefore, this present inventor should obtain this right, to increase additional claim after submission this application, thus continues this additional claim formats for other aspects of this system.

Claims (6)

1. a computing equipment, comprising:
The assembly formed by pole low resistance (ELR) material of modification at least partly.
2. an electric equipment, comprising:
The assembly formed by pole low resistance (ELR) material of modification at least partly.
3. a plant equipment, comprising:
The assembly formed by pole low resistance (ELR) material of modification at least partly.
4. a computing equipment, comprising:
The assembly formed by pole low resistance (ELR) material at least partly, at the temperature place higher than 150K, this ELR material is operated in ELR state.
5. an electric equipment, comprising:
The assembly formed by pole low resistance (ELR) material at least partly, at the temperature place higher than 150K, this ELR material is operated in ELR state.
6. a plant equipment, comprising:
The assembly formed by pole low resistance (ELR) material at least partly, at the temperature place higher than 150K, this ELR material is operated in ELR state.
CN201280044226.0A 2011-03-30 2012-03-30 By extremely low resistance material formed it is electrical, mechanical, calculate and/or other equipment Active CN105264680B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710850006.1A CN107611249B (en) 2011-03-30 2012-03-30 Electrical, mechanical, computing, and/or other devices formed from very low resistance materials

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