CN105679862A - 具有减少的衬底损伤的半导体器件和相关方法 - Google Patents

具有减少的衬底损伤的半导体器件和相关方法 Download PDF

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CN105679862A
CN105679862A CN201610109997.3A CN201610109997A CN105679862A CN 105679862 A CN105679862 A CN 105679862A CN 201610109997 A CN201610109997 A CN 201610109997A CN 105679862 A CN105679862 A CN 105679862A
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laser
semi
conducting material
opto
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C·韦恩斯
J·凯里
X·李
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SiOnyx LLC
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Abstract

本发明提供了具有增加的操作性能的光电子器件、材料和相关方法。例如，在一个方面，光电子器件可以包含半导体材料、在半导体材料中的第一掺杂区、在半导体材料中与第一掺杂区形成结的第二掺杂区以及与该结关联的激光处理区。该激光处理区被定位成与电磁辐射交互。另外，来自该激光处理区的至少一部分激光损伤区被去除，以使得该光电子器件具有约500mV到约800mV的开路电压。

Description

具有减少的衬底损伤的半导体器件和相关方法
本申请是于2011年12月21日提交的名称为“具有减少的衬底损伤的半导体器件和相关方法”的中国专利申请201180068028.3的分案申请。
背景技术
光与光电子器件的交互是一些重要革新的核心。光电子器件如光伏电池、光电二极管和成像器被用于各种技术，如太阳能电池、数字摄像机、光学鼠标、视频摄像机、手机等。通常，许多半导体光检测器件由硅材料制成。已知当硅材料足够厚时会吸收大部分的波长在约300nm到900nm范围内的入射可见光。这些因素结合低成本、充足的供应量、无毒性以及可见光谱的量子效率使得硅成为光检测的首选材料。然而，由于硅的间接带隙，限制硅用于光学探测器或光/电能量转换器的最主要因素是通常需要相对厚(对于一般器件通常大于100μm)的器件层以实现充分的光吸收。
发明内容
本公开提供具有增加的操作性能的光电子器件、材料以及相关方法。例如，在一个方面，提供一种光电子器件。这种器件可以包括半导体材料、半导体材料中的第一掺杂区、半导体材料中与第一掺杂区形成结的第二掺杂区以及与该结关联的激光处理区。该激光处理区被布置成与电磁辐射交互。另外，来自激光处理区的至少一部分激光损伤已经被去除，以使得该光电子器件具有约500mV到约800mV的开路电压。在另一方面，来自激光处理区的激光损伤已经被去除，以使得该光电子器件具有约600mV到约700mV的开路电压。
在另一方面，提供一种形成光电子器件的方法。这种方法可以包括在半导体材料中形成第一掺杂区，在半导体材料中形成第二掺杂区以便第一掺杂区与第二掺杂区形成结，以及激光处理半导体材料的目标区域以形成与结关联的激光纹理区，其中激光纹理区被布置成与电磁辐射交互。该方法也包括去除激光纹理区的至少一部分激光损伤区，同时基本维持激光纹理区的表面拓扑结构，以使得光电子器件具有约500mV到约800mV的开路电压。在另一方面，充分去除来自激光损伤区的激光损伤，以使得光电子器件具有约600mV到约700mV的开路电压。
在另一方面，提供一种半导体材料。这种半导体材料可以包含与第二区域相邻布置的第一区域，其中第一区域具有约100nm到约5μm范围内的厚度并且包括已经受激光损伤去除工艺的激光处理区，并且其中第一区域的多数载流子迁移率和少数载流子寿命是第二区域的值的50％，并且其中第一区域和第二区域具有基本相同的掺杂水平。
附图说明
为了更全面地理解本公开的性能和优势，现在参考以下各实施例的详细说明与附图，其中：
图1是根据本公开的一个方面的光电子器件的截面侧视图；
图2是根据本公开的另一方面的光电子器件的截面侧视图；
图3是根据本公开的另一方面的光电子器件的截面侧视图；
图4是根据本公开的另一方面的光电子器件的截面侧视图；
图5是根据本公开的另一方面的光电子器件的截面侧视图；以及
图6是根据本公开的另一方面的制作光电子器件的方法的流程图。
具体实施方式
在此对本公开进行描述之前，应当理解的是本公开不限制于在此公开的具体结构、处理步骤或材料，而应扩展到可以被本领域技术人员认识到的其等价物。同样应当理解的是在此使用的术语仅用于描述具体实施例的目的而不是限制性的。
定义
将根据下面阐述的定义使用以下术语。
应当注意的是，如在本说明书和随附的权利要求中所用，单数形式“一”和“该”包括复数个指代物，除非上下文明确指出其他含义。因此，比如，“一种掺杂剂”包括一种或更多种此类掺杂剂，并且“该层”的引用包括一个或更多个此类层的引用。
如本文所用，术语“光”和“电磁辐射”可互换使用，并且可以指代紫外光谱、可见光谱、近红外光谱和红外光谱中的光或电磁辐射。这些术语可以更广泛地包括电磁辐射如无线电波、微波、X射线和伽马射线。因此，术语“光”不局限于可见光谱中的电磁辐射。
如本文所用，术语“激光处理”指代使用短脉冲激光修改半导体材料的一部分区域以形成纹理区或表面。
如本文所用，术语“表面改变”和“表面修改”指代使用激光处理技术来改变半导体材料的表面。在一个具体方面，表面修改可以包括主要使用激光辐射的工艺。在另一方面，表面修改可以包括结合掺杂剂使用激光辐射的工艺，由此激光辐射有助于将掺杂剂引入到半导体材料的表面中。同样地，修改的表面可以包括例如纹理表面。
如本文所用，术语“纹理表面”可以指代具有拓扑结构的表面，其中通过用激光脉冲照射形成了纳米到微米尺度的表面变化。
如本文所用，术语“通量”指代来自穿过单位面积的激光辐射的单个脉冲的能量。换句话说，“通量”可以被描述为一个激光脉冲的能量密度。
如本文所用，术语“基本/充分”指代动作、特征、性能、状态、结构、条目或结果的全部或几乎全部的范围或程度。例如，“基本”被包围的物体将意味着物体被全部包围或几乎被全部包围。在一些情况下偏离绝对完整性的精确可允许程度取决于具体的上下文环境。然而，一般来说与完整的接近程度将是具有与正如绝对的和全部的完整性所获得的相同的整体效果。“基本”同样适用于表示动作、特征、性能、状态、结构、条目或结果的完全或几乎完全缺乏的否定意义。例如，“基本不含”颗粒的复合物将是完全不含颗粒，或者是几乎完全不含颗粒，使得其效果与完全不含颗粒相同。换句话说，“基本不含”组分或元素的复合物可能实际上仍然包含该项目，只要不存在其可测量的效果即可。
如本文所用，术语“约”被用于通过保证给定值可能“稍微高于”或“稍微低于”端点来向数值范围端点提供灵活度。
如本文所用，为方便起见，多个条目、结构元件、组成元素和/或材料可能在共用列表中展示。然而，这些列表应该被解释为列表中的每一个成员被独立确定为分离且唯一的成员。因此，在没有相反指示的情况下，这种列表的个体成员不应当仅基于它们在共用列表中的展示被解释为事实上等同于同一列表中的其他任何成员。
在本文中，浓度、数量和其他数值数据将以范围的形式表示或展示。应当理解的是，这种范围形式仅为了方便和简洁，因此应当被灵活地解释为不仅包括范围限值中明确列举的数值，也包括该范围之内包含的全部独立的数值或子范围。作为示例，数值范围“约1到约5”应当被解释为不仅包括约1到约5中明确列举的值，也包括所示范围之内的独立的值和子范围。因此，这个数值范围包括独立的值如2、3和4以及子范围如1-3、2-4和3-5等，同样包括单值1、2、3、4和5。
与此相同的概念适用于仅列举一个数值如最小值或最大值的范围。另外，无论所描述的特征范围的宽度如何，都应当采用这种解释方法。
公开内容
本公开涉及光电子器件、材料和相关方法。这种器件展现增加的电磁辐射吸收性能和/或增强的抗反射性能，同时具有降低的可能源自于制造工艺的半导体材料不完善性和缺陷。已发现包含半导体材料的特定区域如激光处理区可能促进半导体器件和电磁辐射间更高效的交互。例如，激光处理区如已被脉冲激光纹理化或表面修改的半导体材料的区域能够增加许多光电子器件的光交互效率。根据器件的设计，该区域可展现多种有益的性能，例如增强的吸收性能、增强的抗反射性能等。
然而在一些情况下，由于激光会烧蚀、融化并允许半导体固化，这种激光纹理化工艺可能将激光损伤引入半导体材料中。激光损伤可能对半导体材料具有不利影响，例如更低的少数载流子寿命和更低的多数载流子迁移率。这些影响进而可能导致更低的开路电压和/或更低的短路电流密度。对于许多光电子器件来说，半导体的结晶结构中的这种激光损伤可能导致增加的暗电流和/或降低的量子效率及器件性能。因此，通过去除由于激光纹理化半导体表面所引入的激光损伤的一部分、基本全部或全部，激光纹理区的开路电压(V∝)可以增加，在一些情况下可达到近本体半导体或掺杂半导体水平。
例如，如图1所示，半导体材料12可由激光处理以产生纹理表面16。该纹理表面可包括激光损伤区14，其中激光处理已在半导体材料的晶格中产生可能导致更低的少数载流子寿命和更低的多数载流子迁移率的非期望缺陷。这些缺陷的示例可以包括但不限于晶粒边界、悬空键、堆垛层错、无定型(非结晶)区域、点缺陷如空缺或间隙以及本领域技术人员已知的其他结晶缺陷。如图2所示，这种激光损伤的至少一部分能够被去除，其中至少一部分下层激光纹理16保留在半导体材料12上。因此通过去除这种激光损伤，可以保持纹理表面的益处，同时减少由此表面的激光生产所导致的缺陷。
为了减少半导体材料中的激光损伤而去除的材料的量可能根据材料的损伤程度或范围、材料的特性、最终器件的期望功能等而变化。因此，本申请的范围包括在半导体材料中维持至少一部分激光处理表面的任何程度的损伤去除。例如，在一个方面，所去除的具有激光损伤的材料的厚度可以是约1nm到约3μm。在另一方面，所去除的具有激光损伤的材料的厚度可以是约50nm到约2μm。在另一方面，所去除的具有激光损伤的材料的厚度可以是约50nm到约1μm。在另一方面，所去除的损伤材料的厚度或量足以实现光电子器件的期望效率。在进一步的方面，所去除的损伤材料的厚度或量足以使得纹理区中的开路电压与本体半导体材料中的开路电压基本相同，或者与本体半导体材料的掺杂区中的开路电压基本相同。
多种光电子器件都是可预期的，并且可受益于本公开各方面的任何此类器件都被认为在本申请的范围之内。例如，图3示出一个方面，其中电磁辐射吸收半导体材料32已经过激光处理以形成具有表面特征34的纹理区。该纹理区已被处理以去除激光诱导衬底缺陷。电接触区36和38可以分别布置在背侧和前侧。在一个方面，电接触区36也可以用作反射层。在另一方面，独立的反射层可以被耦合在半导体材料和电接触区之间(未示出)。
应当注意的是图中示出的器件的配置仅是示范性的，并且各种其他配置是可预期的。例如，图3中示出的器件接收穿过纹理区并进入半导体材料中的光。在可替换的方面，半导体材料的背侧可以被纹理化而前侧不被纹理化。以此方式，光在碰到纹理层之前照射并穿过半导体材料。然后纹理层可引导光返回穿过半导体材料，因此增加器件的效率。在另一方面，半导体材料的前侧和背侧都可以被纹理化。
在另一方面，光电子器件可以包括半导体材料、在半导体材料中的第一掺杂区以及在半导体材料中与第一掺杂区形成结(junction)的第二掺杂区。该器件可以进一步包括与该结关联且被配置成与电磁辐射交互的激光处理区。另外，来自激光处理区的至少一部分激光损伤区已被去除，以使得光电子器件具有约500mV到约800mV的开路电压。在另一方面，来自激光处理区的激光损伤被去除，以使得光电子器件具有约600mV到约700mV的开路电压。这种激光处理/损伤去除工艺可以额外地有利于提升量子效率。例如，在一方面，光电子器件对于波长为300nm的电磁辐射具有约50％到约100％的内部量子效率。在另一方面，光电子器件对于波长为400nm的电磁辐射具有约70％到约100％的内部量子效率。
图4示出光电子器件的另一方面，该光电子器件具有半导体材料42以及形成结的第一掺杂区44和第二掺杂区46。该半导体材料可以具有从非有意掺杂到高掺杂水平的掺杂水平范围，包括超过固体溶解度极限的超掺杂。例如，如果半导体材料是硅，则这些水平可以导致载流子的浓度范围在1×1012/cm3到约1×1020/cm3内。图4中的第一掺杂区包括激光处理区，该激光处理区包括表面特征47和由脉冲激光在表面特征的形成期间产生的相关激光损伤区48。在这种情况下，激光处理区被形成在第一掺杂区上。因此，掺杂可以与激光处理同时进行，也可以作为单独的工序。在另一方面，激光处理区可以被形成为与第一掺杂区相邻，其作为单独的材料或者作为第一掺杂区的特有部分。在另一方面，介电材料可以被布置在第一掺杂区上，并且该介电材料可以被激光处理以形成纹理区。在这种情况下，纹理区可以与第一掺杂区电隔离。
如图5所示，去除该激光损伤区的至少一部分可以增加材料的少数载流子寿命和多数载流子迁移率，因此增加开路电压。除了图4示出的那些结构，图5也示出反射层52，其耦合至该器件的后表面以便反射光并重新引导光返回穿过器件。图4和图5中的方面也可以根据需要包括电接触区(未示出)。
另外，如图6所示，提供了一种形成光电子器件的方法。该方法可以包括在半导体材料中形成第一掺杂区62，在半导体材料中形成第二掺杂区以便第一掺杂区和第二掺杂区形成结64，激光处理半导体材料的目标区域以形成与该结关联且被配置成与电磁辐射交互的激光纹理区66，以及去除激光纹理区的至少一部分激光损伤区且同时基本维持激光纹理区的表面拓扑结构，以便光电子器件具有约500mV到约800mV的开路电压68。在另一方面，去除损伤之后维持至少50％的表面拓扑结构。换句话说，在去除激光损伤之后表面的峰谷高度和/或RMS粗糙度是在激光损伤去除步骤之前的表面的50％之内。在另一方面，去除损伤之后维持至少75％的表面拓扑结构。在进一步的方面，去除损伤之后维持至少90％的表面拓扑结构。在另一方面，去除损伤之后维持至少95％的表面拓扑结构。
本公开额外提供了可用于多种光电子器件的半导体材料。例如，在一方面，这种半导体材料可包含与第二区域相邻布置的第一区域，其中第一区域的厚度在约100nm到约5μm的范围内且包括已经受激光损伤去除工艺的激光处理区，并且其中第一区域的多数载流子迁移率和少数载流子寿命是第二区域的值的至少约50％，并且其中第一区域和第二区域具有基本相同的掺杂水平。
预期多种半导体材料被用于根据本公开的一些方面的器件和方法。这些半导体材料的非限制性示例可以包括IV族材料、含有来自II族和VI族的材料的化合物和合金、含有来自III族和V族的材料的化合物和合金以及其组合。更具体地，示例性IV族材料可以包括硅、碳(例如金刚石)、锗及其组合。IV族材料的多种示例性组合可以包括碳化硅(SiC)和硅锗(SiGe)。在一个具体的方面，半导体材料可以是硅或者包含硅。
II-VI族材料的示例性组合可以包括硒化镉(CdSe)、硫化镉(CdS)、碲化镉(CdTe)、氧化锌(ZnO)、硒化锌(ZnSe)、硫化锌(ZnS)、碲化锌(ZnTe)、碲锌镉(CdZnTe，CZT)、碲镉汞(HgCdTe)、碲锌汞(HgZnTe)、硒锌汞(HgZnSe)及其组合。
III-V族材料的示例性组合可以包括锑化铝(AlSb)、砷化铝(AlAs)、氮化铝(AlN)、磷化铝(AlP)、氮化硼(BN)、磷化硼(BP)、砷化硼(BAs)、锑化镓(GaSb)、砷化镓(GaAs)、氮化镓(GaN)、磷化镓(GaP)、锑化铟(InSb)、砷化铟(InAs)、氮化铟(InN)、磷化铟(InP)、砷化铝镓(AlGaAs，AlxGa1-xAs)、砷化铟镓(InGaAs，InxGa1-xAs)、磷化铟镓(InGaP)、砷化铝铟(AlInAs)、锑化铝铟(AlInSb)、氮化砷化镓(GaAsN)、磷化砷化镓(GaAsP)、氮化铝镓(AlGaN)、磷化铝镓(AlGaP)、氮化铟镓(InGaN)、锑化砷化铟(InAsSb)、锑化铟镓(InGaSb)、磷化铝镓铟(AlGaInP)、磷化砷化铝镓(AlGaAsP)、磷化砷化铟镓(InGaAsP)、磷化砷化铝铟(AlInAsP)、氮化砷化铝镓(AlGaAsN)、氮化砷化铟镓(InGaAsN)、氮化砷化铟铝(InAlAsIn)、氮化锑化砷化镓(GaAsSbN)、锑化砷化氮化镓铟(GaInNAsSb)、磷化锑化砷化镓铟(GaInAsSbP)及其组合。
在一个具体的方面，半导体材料可以包括Si、GaAs、Ge、CIGS、CdTe中的至少一种，包括它们的合金和化合物。在另一个具体的方面，半导体材料可以是Si或包含Si。
各种类型的半导体材料是可预期的，并且能被包含在光电子器件中的任何此类材料都被认为在本申请的范围之内。例如，在一个方面，半导体材料是单晶体。在另一方面，半导体材料是复晶体(multicrystalline)。在另一方面，半导体材料是微晶体。也可考虑半导体材料是非结晶体。
半导体材料可以具有任意厚度，该厚度允许给定器件具有光电子功能，因此半导体材料的任何此类厚度都被认为在本申请的范围之内。在一些方面，纹理区增加器件的效率，以使得半导体材料可以比之前可能的厚度更薄。减少半导体材料的厚度可减少制作此类器件所需的半导体材料的量。例如，在一个方面，半导体衬底具有约500nm到约200μm的厚度。在另一方面，半导体衬底具有小于或等于约100μm的厚度。在另一方面，半导体衬底具有约1μm到约50μm的厚度。在进一步的方面，半导体衬底可具有约1μm到约5μm的厚度。在更进一步的方面，半导体衬底可具有约500nm到约2μm的厚度。应当注意的是，虽然例示了更薄的半导体材料，但任何厚度的半导体材料都被认为在本申请的范围之内。
多种掺杂剂材料是可预期的，并且能够用于创建半导体材料的掺杂区的任何此类材料都被认为在本申请的范围之内。应当注意的是，所使用的具体掺杂剂可以根据所使用的半导体材料和最终半导体材料的预期用途而发生变化。比如，潜在掺杂剂的选择可以根据是否需要调谐光敏器件而不同。
掺杂剂可以是电子施主或空穴施主。在一个方面，掺杂剂材料的非限制性示例可以包含S、F、B、P、N、As、Se、Te、Ge、Ar、Ga、In、Sb及其组合。应当注意的是，掺杂剂材料的范围应该不仅包括材料自身，还包括递送这种掺杂剂的形式的材料(即掺杂剂载体)。例如，S掺杂剂材料不仅包括S，还包括能够用于将S掺杂到目标区域的任意材料，如H2S、SF6、SO2等，包括它们的组合。在一个具体的方面，掺杂剂可以是S。硫能够以约5×1014到约3×1020个离子/cm2的离子剂量水平存在。含氟化合物的非限制性示例可以包括ClF3、PF5、F2SF6、BF3、GeF4、WF6、SiF4、HF、CF4、CHF3、CH2F2、CH3F、C2F6、C2HF5、C3F8、C4F8、NF3等，包括它们的组合。含硼化合物的非限制性示例可以包括B(CH3)3、BF3、BCl3、BN、C2B10H12、硼硅酸盐、B2H6等，包括它们的组合。含磷化合物的非限制性示例可以包括PF5、PH3、POCl3、P2O5等，包括它们的组合。含氯化合物的非限制性示例可以包括Cl2、SiH2Cl2、HCl、SiCl4等，包括它们的组合。掺杂剂也可以包括含砷化合物如AsH3等，还有含锑化合物。另外，掺杂剂材料可以包括掺杂剂群组交叉的混合物或组合，即含硫化合物与含氯化合物混合。在一个方面，掺杂剂材料可以具有大于空气的密度。在一个具体的方面，掺杂剂材料可以包括Se、H2S、SF6或其混合物。在另一个具体的方面，掺杂剂可以是SF6且具有约5.0×10-8mol/cm3到约5.0×10-4mol/cm3的预定浓度范围。SF6气体是用于通过例如激光工艺将硫合并到半导体材料中的良好载体，而对半导体材料没有产生显著的有害效果。另外，应当注意的是掺杂剂也可以是溶解在溶液如水、酒精或者酸性或碱性溶液中的n型或p型掺杂剂材料的液态溶液。掺杂剂也可以是作为粉末或在晶片上干燥的悬浮物应用的固体材料。另外，可以通过多种方法如离子掺杂、扩散掺杂、等离子体沉积、溅射、激光掺杂等中的任何一种来将掺杂剂引入半导体中。
此外，根据本公开的多个方面的半导体材料可以包含多个层或区域。在一些方面，这些层可以在多数载流子极性(即施主或受主杂质)方面发生变化。施主或受主杂质通常取决于通过生长工艺、沉积工艺、外延工艺、注入工艺、激光处理工艺或者本领域技术人员所知的其他工艺引入的掺杂剂/杂质的类型。在一些方面，这种半导体材料可以包括n型层，本征(i型)层和p型层，因此形成创建结和/或耗尽区的p-i-n半导体材料堆叠。根据本公开也可以想到缺少i型层的半导体材料。在其他方面，半导体材料可以包括多个结。另外，在一些方面，可以使用n(--)、n(-)、n(+)、n(++)、p(--)、p(-)、p(+)或p(++)型的半导体层的变体。正号和负号表示半导体材料掺杂的相对量。
如前所述，至少一部分半导体材料可以被激光处理以形成与电磁辐射交互的纹理区。纹理区可以在半导体材料中或半导体材料上的任何位置处形成，特别是在提供光电子器件的增强功能的位置处。例如，在一个方面，纹理区可以在光交互区处形成。光交互区可以被定义成在器件运行期间与光交互的半导体材料的区域。例如，在一个方面，光交互区可以是接收入射电磁辐射的半导体材料的前表面。在另一方面，光交互区可以是与已经穿过半导体材料的电磁辐射交互的半导体材料的后表面。在另一方面，光交互区可以是接收反射的电磁辐射的半导体材料的侧区。纹理区可以在一个或更多个光交互区处形成，并且纹理区可以横跨整个区域或仅横跨一部分区域形成，这取决于器件的设计。例如，在一个方面，纹理区横跨给定光交互区的面积的至少50％形成。在另一方面，纹理区横跨给定光交互区的面积的至少75％形成。在另一方面，纹理区横跨给定光交互区的面积的至少80％形成。在另一方面，纹理区横跨给定光交互区的面积的至少90％形成。在其他方面，光交互区的离散位置可以被纹理化。
纹理区能够用于散射电磁辐射、重定向电磁辐射和/或吸收电磁辐射，由此增加器件的量子效率。在一个方面，电磁辐射在进入半导体材料之前与特定的纹理区接触。在另一方面，电磁辐射在接触特定的纹理区之前穿过半导体材料。纹理区可以包括增加光伏太阳能电池的有效吸收长度的表面特征。因此，在一些方面，纹理区可以允许光电子器件经历电磁辐射在器件中的多次穿过，尤其是在较长的波长(即红外波长)下。因此这种内部反射能够增加有效吸收长度以使其大于半导体材料的物理厚度。这种吸收长度的增加进而增加器件的量子效率。另外，在一个方面，在半导体材料前侧的纹理区是抗反射的，且因此可以减少照射在其上的光的反射。这种减少的反射可以进一步增加进入半导体材料中的光的比例。因此，抗反射表面可以通过减少可能由反射导致的光损失来增加器件的效率。
用于形成纹理区的多种激光处理技术是可预期的，并且能够形成此区域的任何技术都被视为在本申请的范围之内。激光处理或加工可以允许例如增强吸收性能并因此提高电磁辐射聚焦和检测。例如，在一个方面，半导体材料的目标区域可以使用脉冲激光辐射来照射以形成纹理区。这种工艺的示例在美国专利7,057,256，7,354,792和7,442,629中更详细地描述，这些都通过引用整体合并于此。简言之，用激光辐射来照射半导体材料的表面以形成纹理区或表面改性区。这种激光处理可以在具有或没有掺杂剂材料的情况下发生。在使用掺杂剂的那些方面，激光可以被引导穿过掺杂剂载体并被引导到半导体材料上。以此方式，来自掺杂剂载体的掺杂剂被引入半导体材料的目标区域中。根据本公开的一些方面，包含在半导体材料中的这种区域具有多种优势。例如，纹理区通常具有增加激光处理区的表面积以便增加电磁辐射吸收的概率的表面特征和/或纹理层。在一个方面，这种纹理区是包含已经由激光纹理化产生的微米尺寸和/或纳米尺寸的表面特征的充分纹理化表面。在另一方面，照射半导体材料包括使激光辐射暴露于掺杂剂以便辐射将掺杂剂合并到半导体中。多种掺杂剂材料在本领域是已知的，并在本文中更详细地讨论。
因此，半导体材料的该区域通过激光处理发生化学和/或结构变化，其在某些方面使表面特征的形成呈现为表面上的微米结构、纳米结构和/或图案区域，并且如果使用掺杂剂，则使这种掺杂剂合并到半导体材料中。根据用于形成纹理区的激光处理条件，表面特征可以具有多种配置。表面特征可以是但不限于圆锥、角锥、台柱、突起、微透镜、球状结构、量子点、倒置特征等，包括它们的组合。另外，表面特征可以是微米尺寸的、纳米尺寸的或其组合。例如，圆锥、角锥、突起等可以具有在此范围之内的平均高度。在一个方面，平均高度可以是从特征的基底到特征的远端尖。在另一方面，平均高度可以是从特征创建于其上的表面平面到特征的远端尖。作为另一个示例，量子点、微透镜等可具有在微米尺寸和/或纳米尺寸范围之内的平均半径。
在一些方面，特征的尺寸可以在50nm到2μm的量级上并且能够辅助电磁辐射的吸收。换句话说，纹理区可以增加入射辐射被半导体材料吸收的概率。在另一方面，特征的尺寸可以在50nm到20μm的量级上。在另一方面，特征的尺寸可以在5nm到10μm的量级上。应当注意的是这些尺寸表示在去除半导体材料的激光损伤区之后的表面特征的大小。
用于表面修改半导体材料的激光辐射类型可以根据材料和预期修改而发生变化。本领域已知的任何激光辐射都可以用于本公开的器件和方法。但是，存在很多可能影响表面修改工艺和/或最终产品的激光特性，其包括但不限于激光辐射的波长、光束大小、光束形状、脉冲宽度、脉冲通量/能量密度、脉冲频率、偏振、激光相对于半导体材料的传播方向、相干程度等。在一个方面，激光可以被配置为提供半导体材料的脉动激光处理。短脉冲激光是能够产生飞秒、皮秒和/或纳秒脉冲持续时间的激光。激光脉冲可以具有在约10nm到约8μm范围内的中心波长，更具体从约200nm到约1200nm。激光辐射的脉冲宽度可以在约几十飞秒到约几百纳秒的范围内。在一个方面，激光脉冲宽度可以在约5飞秒到约50皮秒的范围内。在另一方面，激光脉冲宽度可以在约50皮秒到约100纳秒的范围内。在另一方面，激光脉冲宽度在约50飞秒到约500飞秒的范围内。在另一方面，激光脉冲宽度在约5飞秒到约900皮秒的范围内。
照射目标区域的激光脉冲数量可以在约1到约2000的范围内。在一个方面，照射半导体目标区域的激光脉冲数量可以为约2个到约1000个。进一步地，脉冲的重复率或频率可以被选择为在以下范围内：约10Hz到约10μHz、约1kHz到约1MHz或者约10Hz到约1kHz。另外，每个激光脉冲的通量可以在约1kJ/m2到约20kJ/m2的范围内，或者在约3kJ/m2到约8kJ/m2的范围内。激光的通量与纹理区中的特征的大小有关。平均而言，更低的激光通量导致更小的特征，而更高的激光通量导致更大的特征。可能影响表面形态的其他因素包括激光极化和激光相对于被照射的半导体表面的传播方向。
此外，对半导体材料进行激光处理的环境可能对特征的大小有影响。例如，在液体中激光处理半导体材料可能比在气体中激光处理产生更小的特征。其他示例包括在真空中进行激光处理、在具有受控气体的腔室内进行激光处理、在开放空气中不受控制地进行激光处理、在开放空气中通过流经表面的一种或更多种气体来进行激光处理等。在液体中对半导体材料进行激光处理的工艺在2008年1月27日提出的美国专利申请12/038,209中进行描述，其全部内容通过引用合并于此。
如前所述，去除一部分具有激光损伤的半导体材料可以改善器件的性能。可以通过多种技术实现去除这种激光损伤。应当注意的是去除损伤材料的具体技术不应该被认为是限制性的，并且所有此类技术都被视为在本申请的范围之内。这种技术可以包括例如在激光处理之后在至少约30秒的持续时间内将衬底退火到高于500℃的温度。其他可预期的示例是通过蚀刻技术去除含有大部分缺陷的一部分半导体材料。例如，如果结晶缺陷位于半导体材料的第一个300nm内，则可以执行湿蚀刻或干蚀刻步骤来去除此300nm的损伤层。蚀刻化合物的非限制性示例包括氢氟酸、硝酸、盐酸、磷酸、乙酸、氢氧化钾、氢氧化钠等，包括其他已知的酸和碱。
在另一个去除示例中，通过将损伤区转换成二氧化硅并且通过氢氟酸蚀刻法蚀刻或剥离二氧化硅层，可以去除缺陷，因而留下没有缺陷的单晶材料。也可以通过烧蚀、抛光等方法去除缺陷。
必须注意的是基本维持表面特征或表面拓扑结构，由此保留器件的抗反射和光俘获性能，如图2所示。在一个方面，在不借助于抗反射膜的情况下，最终基本不含缺陷的器件针对具有在约500nm到约800nm范围内的波长的入射光具有小于约25％的表面反射率。在另一方面，在不借助于抗反射膜的情况下，最终基本不含缺陷的器件针对具有在约500nm到约800nm范围内的波长的入射光具有小于约20％的表面反射率。在另一方面，在不借助于抗反射膜的情况下，最终基本不含缺陷的器件针对具有在约500nm到约800nm范围内的波长的入射光具有小于约10％的表面反射率。在进一步的方面，在不借助于抗反射膜的情况下，最终基本不含缺陷的器件针对具有在约500nm到约800nm范围内的波长的入射光具有小于约5％的表面反射率。在另一方面，器件针对具有在约300nm到约1200nm范围内的至少一个波长的入射光具有小于或等于约5％的表面反射率。应当注意的是，抗反射膜可以被布置在器件的至少一个表面上，并能够进一步改善抗反射性能且进而能够提高效率。
在一些方面，钝化层如氮化物可以被布置在光电子器件的至少一个表面之上。钝化材料的非限制性示例可以包括氮化物、氧化物、非晶硅、非晶碳化硅等，包括它们的组合。在一个具体的方面，钝化区包含氧化物。另外，钝化区可以具有任意的厚度。例如，在一个方面，钝化区具有约100nm到约1μm的厚度。在另一方面，钝化区具有约5nm到约100nm的厚度。在另一方面，钝化区具有约20nm到约50nm的厚度。在一个实施例中，钝化区可以是抗反射区。
应当理解的是上述布置仅用于示出本公开的原理应用。本领域技术人员可以在不偏离本公开的精神和范围的情况下设计大量的修改和可替换布置，且随附的权利要求旨在覆盖这种修改和布置。因此，虽然上面通过结合目前被视为本公开最实用的实施例描述了本公开的特性和细节，但在不偏离本文的原理和概念的情况下，包括但不限制于尺寸、材料、形状、形式、操作的功能和方式、装配和用途的大量变体对于本领域技术人员是显而易见的。

Claims (10)

1.一种光电子器件，其包括：
半导体材料；
在所述半导体材料中的第一掺杂区；
在所述半导体材料中与所述第一掺杂区形成结的第二掺杂区；以及
激光处理区，其与所述结关联并且被配置为与电磁辐射交互，其中来自激光处理区的至少一部分激光损伤区被去除，以使得所述光电子器件具有约500mV到约800mV的开路电压。
2.根据权利要求1所述的器件，其中来自所述激光处理区的激光损伤被去除，以使得所述光电子器件具有约600mV到约700mV的开路电压。
3.根据权利要求1所述的器件，其中所述光电子器件对于300nm的电磁辐射波长具有约50％到约100％的内部量子效率.
4.根据权利要求1所述的器件，其中所述光电子器件对于400nm的电磁辐射波长具有约70％到约100％的内部量子效率。
5.根据权利要求1所述的器件，其中来自所述激光处理区的激光损伤已经被充分去除。
6.根据权利要求1所述的器件，其中所述半导体材料包含选自由以下各项构成的群组的成分：IV族材料、含有来自II族和VI族的材料的化合物和合金、含有来自III族和V族的材料的化合物和合金以及其组合。
7.根据权利要求1所述的器件，其中所述半导体材料包含选自由以下各项构成的群组的成分：Si、GaAs、Ge、CIGS、CdTe以及其合金和组合。
8.根据权利要求1所述的器件，其中所述半导体材料包含Si。
9.根据权利要求8所述的器件，其中所述Si包含选自由以下各项构成的群组的成分：单晶体、复晶体、微晶体、多晶体以及其组合.
10.根据权利要求8所述的器件，其中所述Si是复晶体。
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Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US7442629B2 (en) * 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
CN106449684B (zh) 2010-06-18 2019-09-27 西奥尼克斯公司 高速光敏设备及相关方法
EP2600411B1 (en) * 2010-07-26 2019-08-21 Hamamatsu Photonics K.K. Method for manufacturing light-absorbing substrate and method for manufacturing die for manufacturing light-absorbing substrate
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
EP2732402A2 (en) 2011-07-13 2014-05-21 Sionyx, Inc. Biometric imaging devices and associated methods
TWI424583B (zh) * 2011-07-25 2014-01-21 Nat Univ Tsing Hua 薄膜太陽能電池的製造方法
US20130234149A1 (en) * 2012-03-09 2013-09-12 Electro Scientific Industries, Inc. Sidewall texturing of light emitting diode structures
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
KR20150130303A (ko) 2013-02-15 2015-11-23 사이오닉스, 아이엔씨. 안티 블루밍 특성 및 관련 방법을 가지는 높은 동적 범위의 cmos 이미지 센서
WO2014151093A1 (en) 2013-03-15 2014-09-25 Sionyx, Inc. Three dimensional imaging utilizing stacked imager devices and associated methods
US9209345B2 (en) 2013-06-29 2015-12-08 Sionyx, Inc. Shallow trench textured regions and associated methods
US20160087577A1 (en) * 2014-09-24 2016-03-24 International Business Machines Corporation Flexible solar cells comprising thick and thin absorber regions
KR20160149847A (ko) 2015-06-19 2016-12-28 삼성전자주식회사 반사 방지 필름, 그 필름을 포함한 전자 장치, 및 그 필름의 제조방법과 제조장치
JP2017050302A (ja) * 2015-08-31 2017-03-09 特定非営利活動法人ナノフォトニクス工学推進機構 間接遷移型半導体発光素子
BR112021004108A2 (pt) 2018-09-07 2021-05-25 Controle De Donnees Metropolis Inc. câmera para poste de iluminação pública
CN109585607B (zh) * 2018-12-05 2020-07-03 中国科学院长春光学精密机械与物理研究所 降低微结构硅基光电探测器表面缺陷的方法及光电探测器
TR201819952A2 (tr) * 2018-12-20 2020-07-21 Hacettepe Ueniversitesi Geni̇ş bant araliğinda çalişan bi̇r yarii̇letken fotodi̇yot ve elde etme yöntemi̇
CN111628022B (zh) * 2019-02-28 2022-07-15 中国科学院物理研究所 GaAs基光电器件及其阵列的制备方法
US11393938B2 (en) * 2019-04-02 2022-07-19 Utica Leaseco, Llc Laser-textured thin-film semiconductors by melting and ablation
CN110931598A (zh) * 2019-11-12 2020-03-27 浙江爱旭太阳能科技有限公司 一种二次退火的单晶硅se-perc电池的制造方法
CN111299838A (zh) * 2019-11-22 2020-06-19 武汉大学 集成电路互连线激光抛光工艺

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003258285A (ja) * 2002-02-27 2003-09-12 Sharp Corp 表面凹凸構造の作製方法及び太陽電池
CN1507075A (zh) * 2002-12-10 2004-06-23 北京力诺桑普光伏高科技有限公司 单晶硅太阳能电池的表面结构及其制作方法
CN1614789A (zh) * 2004-09-30 2005-05-11 无锡尚德太阳能电力有限公司 一种制备多晶硅绒面的方法
CN101404307A (zh) * 2008-10-29 2009-04-08 中山大学 一种多晶硅太阳电池绒面制作方法
US20090101197A1 (en) * 2005-05-11 2009-04-23 Mitsubishi Electric Corporation Solar Battery and Production Method Thereof
CN101423942A (zh) * 2008-11-13 2009-05-06 蒋冬 一种制备单晶硅绒面的碱腐蚀溶液及方法
CN101478013A (zh) * 2008-12-30 2009-07-08 无锡尚德太阳能电力有限公司 一种反应离子刻蚀制备太阳电池硅片绒面的方法以及用该方法制造的太阳电池
CN101634026A (zh) * 2009-08-26 2010-01-27 北京市太阳能研究所有限公司 一种制备单晶硅绒面的腐蚀液及方法
CN101634027A (zh) * 2009-08-26 2010-01-27 北京市太阳能研究所有限公司 一种制备单晶硅绒面的方法
CN101818348A (zh) * 2010-04-02 2010-09-01 浙江大学 一步法制备单晶硅太阳能电池绒面的方法

Family Cites Families (95)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3487223A (en) 1968-07-10 1969-12-30 Us Air Force Multiple internal reflection structure in a silicon detector which is obtained by sandblasting
GB2030766A (en) 1978-09-02 1980-04-10 Plessey Co Ltd Laser treatment of semiconductor material
US4277793A (en) 1979-07-16 1981-07-07 Rca Corporation Photodiode having enhanced long wavelength response
US4419533A (en) 1982-03-03 1983-12-06 Energy Conversion Devices, Inc. Photovoltaic device having incident radiation directing means for total internal reflection
US4514582A (en) 1982-09-17 1985-04-30 Exxon Research And Engineering Co. Optical absorption enhancement in amorphous silicon deposited on rough substrate
US4663188A (en) * 1982-09-27 1987-05-05 Rca Corporation Method for making a photodetector with enhanced light absorption
JPS59127879A (ja) 1983-01-12 1984-07-23 Semiconductor Energy Lab Co Ltd 光電変換装置およびその作製方法
US4493942A (en) 1983-01-18 1985-01-15 Exxon Research And Engineering Co. Solar cell with two-dimensional reflecting diffraction grating
US4536608A (en) 1983-04-25 1985-08-20 Exxon Research And Engineering Co. Solar cell with two-dimensional hexagonal reflecting diffraction grating
AU565214B2 (en) 1983-12-23 1987-09-10 Unisearch Limited Laser grooved solar cell
JPS63116421A (ja) 1986-11-05 1988-05-20 Mitsubishi Electric Corp 半導体装置の製造方法
AU612226B2 (en) 1987-12-17 1991-07-04 Unisearch Limited Solar cells with tilted geometrical features
US5081049A (en) 1988-07-18 1992-01-14 Unisearch Limited Sculpted solar cell surfaces
JPH02152226A (ja) 1988-12-02 1990-06-12 Fujitsu Ltd 半導体装置の製造方法
JPH0795602B2 (ja) 1989-12-01 1995-10-11 三菱電機株式会社 太陽電池及びその製造方法
US5322988A (en) 1990-03-29 1994-06-21 The United States Of America As Represented By The Secretary Of The Navy Laser texturing
US5164324A (en) 1990-03-29 1992-11-17 The United States Of America As Represented By The Secretary Of The Navy Laser texturing
US5114876A (en) 1990-12-07 1992-05-19 The United States Of America As Represented By The United States Department Of Energy Selective epitaxy using the gild process
JPH0653538A (ja) 1992-07-28 1994-02-25 Toshiba Corp 半導体受光素子
US5346850A (en) 1992-10-29 1994-09-13 Regents Of The University Of California Crystallization and doping of amorphous silicon on low temperature plastic
US5714404A (en) 1993-11-18 1998-02-03 Regents Of The University Of California Fabrication of polycrystalline thin films by pulsed laser processing
JPH07173484A (ja) 1993-12-17 1995-07-11 Toyota Motor Corp 電気粘性流体組成物
US5792280A (en) 1994-05-09 1998-08-11 Sandia Corporation Method for fabricating silicon cells
DE19522539C2 (de) 1995-06-21 1997-06-12 Fraunhofer Ges Forschung Solarzelle mit einem, eine Oberflächentextur aufweisenden Emitter sowie Verfahren zur Herstellung derselben
US5597621A (en) 1995-12-01 1997-01-28 University Of Florida Method of manufacturing photoluminescing semiconductor material using lasers
JP3516552B2 (ja) 1996-04-30 2004-04-05 シャープ株式会社 受光素子の製造方法
JP3422290B2 (ja) 1999-07-22 2003-06-30 日本電気株式会社 半導体薄膜の製造方法
KR100683390B1 (ko) 1999-12-28 2007-02-15 매그나칩 반도체 유한회사 이미지센서의 제조 방법
US6580053B1 (en) 2000-08-31 2003-06-17 Sharp Laboratories Of America, Inc. Apparatus to control the amount of oxygen incorporated into polycrystalline silicon film during excimer laser processing of silicon films
DE10042733A1 (de) 2000-08-31 2002-03-28 Inst Physikalische Hochtech Ev Multikristalline laserkristallisierte Silicium-Dünnschicht-Solarzelle auf transparentem Substrat
US7390689B2 (en) 2001-05-25 2008-06-24 President And Fellows Of Harvard College Systems and methods for light absorption and field emission using microstructured silicon
US7354792B2 (en) 2001-05-25 2008-04-08 President And Fellows Of Harvard College Manufacture of silicon-based devices having disordered sulfur-doped surface layers
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US7109517B2 (en) 2001-11-16 2006-09-19 Zaidi Saleem H Method of making an enhanced optical absorption and radiation tolerance in thin-film solar cells and photodetectors
US6759262B2 (en) 2001-12-18 2004-07-06 Agilent Technologies, Inc. Image sensor with pixel isolation system and manufacturing method therefor
US6667528B2 (en) 2002-01-03 2003-12-23 International Business Machines Corporation Semiconductor-on-insulator lateral p-i-n photodetector with a reflecting mirror and backside contact and method for forming the same
US6583936B1 (en) 2002-03-11 2003-06-24 Eastman Kodak Company Patterned roller for the micro-replication of complex lenses
AU2003279758A1 (en) 2002-10-03 2004-04-23 Pan Jit Americas, Inc. Low temperature texturing layer to enhance adhesion of subsequent layers
JP4387091B2 (ja) 2002-11-05 2009-12-16 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
TWI227913B (en) 2003-05-02 2005-02-11 Au Optronics Corp Method of fabricating polysilicon film by excimer laser crystallization process
US7247527B2 (en) 2003-07-31 2007-07-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device, and laser irradiation apparatus
JP4442157B2 (ja) 2003-08-20 2010-03-31 ソニー株式会社 光電変換装置及び固体撮像装置
US7419846B2 (en) 2004-04-13 2008-09-02 The Trustees Of Princeton University Method of fabricating an optoelectronic device having a bulk heterojunction
US7880255B2 (en) 2004-07-19 2011-02-01 Micron Technology, Inc. Pixel cell having a grated interface
DE102004036220B4 (de) 2004-07-26 2009-04-02 Jürgen H. Werner Verfahren zur Laserdotierung von Festkörpern mit einem linienfokussierten Laserstrahl
JP4729896B2 (ja) 2004-09-17 2011-07-20 ソニー株式会社 半導体薄膜の表面処理方法
JP4501633B2 (ja) 2004-10-28 2010-07-14 ソニー株式会社 固体撮像素子とその製造方法
US8637340B2 (en) 2004-11-30 2014-01-28 Solexel, Inc. Patterning of silicon oxide layers using pulsed laser ablation
US20060118781A1 (en) 2004-12-03 2006-06-08 Omnivision Technologies, Inc. Image sensor and pixel having a polysilicon layer over the photodiode
WO2006078319A1 (en) 2005-01-19 2006-07-27 Massachusetts Institute Of Technology Light trapping in thin film solar cells using textured photonic crystal
US20060180885A1 (en) 2005-02-14 2006-08-17 Omnivision Technologies, Inc. Image sensor using deep trench isolation
US7317579B2 (en) * 2005-08-11 2008-01-08 Micron Technology, Inc. Method and apparatus providing graded-index microlenses
US7456452B2 (en) 2005-12-15 2008-11-25 Micron Technology, Inc. Light sensor having undulating features for CMOS imager
WO2008091242A2 (en) 2005-12-21 2008-07-31 Uva Patent Foundation Systems and methods of laser texturing and crystallization of material surfaces
WO2008127807A1 (en) 2007-03-09 2008-10-23 University Of Virginia Patent Foundation Systems and methods of laser texturing of material surfaces and their applications
KR100741931B1 (ko) 2005-12-28 2007-07-23 동부일렉트로닉스 주식회사 이미지 센서 및 그의 제조방법
US8121356B2 (en) 2006-09-15 2012-02-21 Identix Incorporated Long distance multimodal biometric system and method
FR2906405B1 (fr) 2006-09-22 2008-12-19 Commissariat Energie Atomique Procede de realisation de regions dopees dans un substrat et de cellule photovoltaique
US7888159B2 (en) 2006-10-26 2011-02-15 Omnivision Technologies, Inc. Image sensor having curved micro-mirrors over the sensing photodiode and method for fabricating
US20080178932A1 (en) 2006-11-02 2008-07-31 Guardian Industries Corp. Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same
JP4749351B2 (ja) 2007-01-30 2011-08-17 富士通株式会社 赤外線検出器
US7498650B2 (en) 2007-03-08 2009-03-03 Teledyne Licensing, Llc Backside illuminated CMOS image sensor with pinned photodiode
US8143514B2 (en) 2007-09-11 2012-03-27 Silicon China (Hk) Limited Method and structure for hydrogenation of silicon substrates with shaped covers
JP5248995B2 (ja) 2007-11-30 2013-07-31 株式会社半導体エネルギー研究所 光電変換装置の製造方法
JP5286046B2 (ja) * 2007-11-30 2013-09-11 株式会社半導体エネルギー研究所 光電変換装置の製造方法
US7880168B2 (en) 2007-12-19 2011-02-01 Aptina Imaging Corporation Method and apparatus providing light traps for optical crosstalk reduction
US7982177B2 (en) 2008-01-31 2011-07-19 Omnivision Technologies, Inc. Frontside illuminated image sensor comprising a complex-shaped reflector
US7989859B2 (en) 2008-02-08 2011-08-02 Omnivision Technologies, Inc. Backside illuminated imaging sensor with silicide light reflecting layer
US7816220B2 (en) 2008-02-27 2010-10-19 President & Fellows Of Harvard College Laser-induced structuring of substrate surfaces
US8058615B2 (en) 2008-02-29 2011-11-15 Sionyx, Inc. Wide spectral range hybrid image detector
EP2105972A3 (en) * 2008-03-28 2015-06-10 Semiconductor Energy Laboratory Co, Ltd. Photoelectric conversion device and method for manufacturing the same
US7759755B2 (en) 2008-05-14 2010-07-20 International Business Machines Corporation Anti-reflection structures for CMOS image sensors
US20100074396A1 (en) 2008-07-07 2010-03-25 Siemens Medical Solutions Usa, Inc. Medical imaging with black silicon photodetector
WO2010019161A1 (en) 2008-08-15 2010-02-18 Sionyx, Inc. Wideband semiconducting light detector
CN101656273B (zh) 2008-08-18 2011-07-13 中芯国际集成电路制造(上海)有限公司 选择性发射极太阳能电池单元及其制造方法
KR101010286B1 (ko) * 2008-08-29 2011-01-24 엘지전자 주식회사 태양 전지의 제조 방법
US7915154B2 (en) * 2008-09-03 2011-03-29 Piwczyk Bernhard P Laser diffusion fabrication of solar cells
US8679959B2 (en) 2008-09-03 2014-03-25 Sionyx, Inc. High sensitivity photodetectors, imaging arrays, and high efficiency photovoltaic devices produced using ion implantation and femtosecond laser irradiation
US7968834B2 (en) 2008-09-22 2011-06-28 Sionyx, Inc. Response-enhanced monolithic-hybrid pixel
US7745901B1 (en) 2009-01-29 2010-06-29 Sionyx, Inc. Highly-depleted laser doped semiconductor volume
JP5185205B2 (ja) 2009-02-24 2013-04-17 浜松ホトニクス株式会社 半導体光検出素子
JP5185206B2 (ja) 2009-02-24 2013-04-17 浜松ホトニクス株式会社 半導体光検出素子
WO2010104842A1 (en) 2009-03-09 2010-09-16 Sionyx, Inc. Multi-junction semiconductor photovoltaic apparatus and methods
US7964431B2 (en) 2009-03-19 2011-06-21 Twin Creeks Technologies, Inc. Method to make electrical contact to a bonded face of a photovoltaic cell
US8207051B2 (en) 2009-04-28 2012-06-26 Sionyx, Inc. Semiconductor surface modification
KR101160112B1 (ko) * 2009-04-29 2012-06-26 주식회사 효성 함몰전극형 태양전지의 제조방법
US20100300505A1 (en) 2009-05-26 2010-12-02 Chen Yung T Multiple junction photovolatic devices and process for making the same
US8476681B2 (en) 2009-09-17 2013-07-02 Sionyx, Inc. Photosensitive imaging devices and associated methods
KR102234065B1 (ko) 2009-09-17 2021-03-31 사이오닉스, 엘엘씨 감광성 이미징 장치 및 이와 관련된 방법
US9881965B2 (en) 2009-09-30 2018-01-30 Stmicroelectronics S.A. Back-side image sensor
WO2011140273A2 (en) * 2010-05-04 2011-11-10 Sionyx, Inc. Photovoltaic devices and associated methods
DE102010038796B4 (de) 2010-08-02 2014-02-20 Von Ardenne Anlagentechnik Gmbh Dünnschichtsolarzelle und Verfahren zu ihrer Herstellung
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
US20120313205A1 (en) 2011-06-10 2012-12-13 Homayoon Haddad Photosensitive Imagers Having Defined Textures for Light Trapping and Associated Methods

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003258285A (ja) * 2002-02-27 2003-09-12 Sharp Corp 表面凹凸構造の作製方法及び太陽電池
CN1507075A (zh) * 2002-12-10 2004-06-23 北京力诺桑普光伏高科技有限公司 单晶硅太阳能电池的表面结构及其制作方法
CN1614789A (zh) * 2004-09-30 2005-05-11 无锡尚德太阳能电力有限公司 一种制备多晶硅绒面的方法
US20090101197A1 (en) * 2005-05-11 2009-04-23 Mitsubishi Electric Corporation Solar Battery and Production Method Thereof
CN101404307A (zh) * 2008-10-29 2009-04-08 中山大学 一种多晶硅太阳电池绒面制作方法
CN101423942A (zh) * 2008-11-13 2009-05-06 蒋冬 一种制备单晶硅绒面的碱腐蚀溶液及方法
CN101478013A (zh) * 2008-12-30 2009-07-08 无锡尚德太阳能电力有限公司 一种反应离子刻蚀制备太阳电池硅片绒面的方法以及用该方法制造的太阳电池
CN101634026A (zh) * 2009-08-26 2010-01-27 北京市太阳能研究所有限公司 一种制备单晶硅绒面的腐蚀液及方法
CN101634027A (zh) * 2009-08-26 2010-01-27 北京市太阳能研究所有限公司 一种制备单晶硅绒面的方法
CN101818348A (zh) * 2010-04-02 2010-09-01 浙江大学 一步法制备单晶硅太阳能电池绒面的方法

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